Method for operating a machining device, corresponding device, and solid oxide fuel cell

Abstract

The invention relates to a method for operating a machining device (10a) comprising: at least one machining unit (12a), in particular a laser drilling unit, wherein, in at least one machining step, at least one through-opening (14a) is introduced into the substrate (16a) for an electrochemical cell by means of the machining unit (12a); and at least one open-loop and closed-loop control unit (20a) by means of which parameters of the machining unit (12a) are adjusted. According to the invention, the machining unit (12a) comprises at least one laser that can emit GHz bursts, wherein the individual laser pulses within the burst train are picosecond laser pulses, wherein, in said at least one machining step, the substrate (16a) for an electrochemical cell is machined by means of the GHz burst laser.

Description

[0001] METHOD FOR OPERATION OF A PROCESSING DEVICE, CORRESPONDING DEVICE, AND SOLID FUEL CELL

[0002] Method for operating a processing device

[0003] State of the art

[0004] A method for operating a machining device, with at least one machining unit, in particular a laser drilling unit, wherein in at least one machining step at least one through-hole is made in the substrate for an electrochemical cell by means of the machining unit, and with at least one control and regulation unit by means of which parameters of the machining unit are adjusted, has already been proposed.

[0005] Disclosure of the invention

[0006] The invention relates to a method for operating a processing device, with at least one processing unit, in particular a laser drilling unit, wherein in at least one processing step at least one through-hole is introduced into the substrate for an electrochemical cell by means of the processing unit, and with at least one control unit, by means of which parameters of the processing unit are adjusted.

[0007] It is proposed that the processing unit comprises at least one laser capable of emitting gHz bursts, wherein the individual laser pulses within the burst train are ps laser pulses, and wherein, in at least one processing step, the substrate for an electrochemical cell is processed using the gHz burst laser. In this context, a "processing device" is understood to mean, in particular, a device configured for processing a substrate. Specifically, the processing device is configured to process a substrate for an electrochemical cell. Preferably, the processing device is designed in multiple parts. Preferably, a non-clamping processing method is carried out with the processing device. Furthermore, the processing device preferably includes a holder for the substrate for an electrochemical cell.Preferably, the substrate is processed directly in a single operating step. Alternatively, indirect processing of the substrate by the processing device is also conceivable. The processing device is particularly preferably configured to perform all necessary steps, for example, a single processing step.

[0008] In this context, a "substrate for an electrochemical cell" preferably refers to a substrate intended for use in a fuel cell. Preferably, the substrate for an electrochemical cell is designed as a sheet. Preferably, the substrate is intended for use in an electrolyte cell. Particularly preferably, the substrate for an electrochemical cell is used in a solid oxide fuel cell. Alternatively, the substrate is intended for use in a battery. Preferably, the substrate for an electrochemical cell is configured to provide a base for the electrolyte. Furthermore, a substrate made of a pre-sintered ceramic is conceivable. Other materials that would appear suitable to a person skilled in the art are also conceivable.In this context, a non-shrinking material is understood to mean materials which do not shrink further during a shrinkage process, such as a sintering process, and / or which have already been shrunk beforehand, for example by a sintering process.

[0009] In this context, a "processing unit" is understood to mean, in particular, a unit designed to process a substrate. Preferably, the processing unit is designed to create recesses, especially through-holes, in the substrate. Preferably, the processing unit creates a plurality of through-holes in a substrate for an electrochemical cell. In particular, the substrate for an electrochemical cell absorbs the thermal energy introduced by the processing unit. Specifically, the creation of multiple through-holes leads to an accumulation of thermal energy in the substrate for an electrochemical cell. Preferably, the processing unit includes, in particular, at least one non-clamping tool for creating recesses. Preferably, the processing unit is designed in multiple parts.Preferably, the processing unit is configured to generate a laser pulse. Preferably, the processing unit is configured to generate a single laser pulse and / or several successive laser pulses. Particularly preferably, the processing unit is configured as a laser drill. In particular, the processing unit is configured to perform processing of at least one surface of the substrate for an electrochemical cell. Preferably, energy is introduced locally by the laser pulse generated by the processing unit. Particularly preferably, the energy is locally sufficient to melt and / or vaporize the surface of the substrate at least substantially partially, preferably largely, and particularly preferably completely. Alternatively, particularly complete melting combined with at least substantially partial vaporization is also conceivable.Preferably, at least one recess is created in the substrate for an electrochemical cell by processing its surface. Particularly preferably, a through-hole is formed in the substrate for an electrochemical cell by processing its surface. Preferably, the through-hole is arranged perpendicular to a principal plane of extension of the substrate for an electrochemical cell. A "principal plane of extension" of a component is understood to be, in particular, a plane that is parallel to a largest side face of the smallest imaginary cuboid that just completely encloses the component, and especially one that passes through the center of the cuboid. Preferably, the processing unit focuses the laser pulse.In this context, a "control and regulation unit" is understood to mean, in particular, a unit that controls and / or adjusts the process parameters of the processing unit during at least one processing step. Preferably, the process parameters are continuously adjusted throughout the entire processing step. It is particularly conceivable that the control and regulation unit makes adjustments before a processing step and does not make any changes during the processing step. Preferably, a user can manually change the process parameters of the processing unit before and during a processing step. Most preferably, the control and regulation unit automatically changes the process parameters of the processing unit.In particular, it is conceivable that the control unit adjusts the process parameters during a processing step based on a preset parameter set.

[0010] In this context, a "processing step" is understood to mean, in particular, a process step in which the substrate for an electrochemical cell is processed using a processing unit. Preferably, a processing step involves the direct processing of the substrate for an electrochemical cell. Preferably, the processing unit is configured as a gHz burst laser. Preferably, a substrate for an electrochemical cell is processed using a gHz burst laser in a processing step. In this context, "gHz burst laser" is understood to mean a laser that generates a laser beam in an ultrashort light pulse in the picosecond range. In particular, a picosecond is understood to mean a pulse duration between 10⁻⁹ s and 10⁻¹² s. Preferably, the gHz burst laser generates several successively produced laser pulses.Preferably, the multiple laser pulses in a processing step have different process parameters. Preferably, the gHz burst laser has a higher average power than the average power of a fiber laser.

[0011] The inventive design of the processing device allows for particularly improved properties with regard to heat accumulation. Specifically, due to the lower heat accumulation compared to that of a fiber laser, the saturation temperature of the substrate for an electrochemical cell is lower than that of a substrate processed by, for example, a fiber laser. This results in particularly improved properties with regard to thermal expansion. Consequently, the substrate for an electrochemical cell exhibits less warping compared to thermal expansion during processing by, for example, a fiber laser.This allows for a particularly advantageous reduction in energy density, achieving beneficial properties with regard to production control and energy savings by compensating for the reduction in energy density with a larger number of laser pulses. In particular, the energy savings enable multi-beam processing, leading to advantageous processing speeds. The use of the gHz burst laser, in particular, allows for advantageous ablation properties. The use of the gHz burst laser, in particular, allows for advantageous process reliability.

[0012] Furthermore, it is proposed that in at least one processing step, the pulse and burst energy be adapted over time by means of the control unit. Preferably, a constant adaptation of the pulse and burst energy is performed over time by means of the control unit in one processing step. It is particularly conceivable that a random adaptation of the pulse and burst energy is performed over time by means of the control unit in one processing step. Preferably, the energy distribution of the pulse is influenced by the adaptation of the pulse and burst energy over time in one processing step. Preferably, the pulse and burst energy is reduced to zero in a temporal adaptation in one processing step. Preferably, the duration of the pulse peaks is influenced by the adaptation of the pulse and burst energy.In particular, it is conceivable that the maximum power of the pulse peaks can be controlled in a processing step by adapting the pulse and burst energy over time. This can advantageously reduce the energy density and achieve beneficial properties with regard to production control and energy savings. Specifically, improved properties with regard to thermal expansion and heat accumulation can be achieved.

[0013] Furthermore, it is proposed that in at least one processing step, the control unit determines an optimal adaptation of the pulse and burst energy of the processing unit. Preferably, in one processing step, the pulse and burst energy E is divided between the processing unit and the processing unit. puts in a erosion energy Eabrost, i n e i ne Energy of accumulation E akkum and into an energy which is reflected Ej-e^.

[0014] Epuis Ea t> ra g + E akkum + E re fi

[0015] In this context, "optimal adaptation" of pulse and burst energy refers in particular to a pulse and burst energy E puis to be understood in which the energy of accumulation E akkum and the energy of reflection E re fi should develop the lowest possible value. The energy of accumulation E is particularly preferred. akkum and the energy of reflection E refi zero. Preferably, the largest proportion of the pulse transmission is the ablation energy E. abtrag In particular, in one processing step, preferably at least 80%, preferably at least 90%, and most preferably at least 95% of the pulse and burst energy is converted into removal energy E. abtragThe process is converted. Preferably, in a processing step, the pulse and burst energy is reduced to increase the proportion of removal energy within the pulse and burst energy. In particular, it is conceivable to increase the pulse and burst energy in a processing step to achieve a maximum proportion of removal energy, whereby in this case the proportion of energy from reflection and energy from accumulation would have to have the lowest possible value. This can advantageously reduce the energy density and achieve beneficial properties with regard to production control and energy savings.

[0016] Furthermore, it is proposed that an optimal ratio of material removal to pulse and burst energy be determined by the control unit in at least one processing step. Preferably, the ratio of material removal to pulse and burst energy is determined automatically by the control unit in one processing step. Particularly preferably, continuous monitoring of the ratio of material removal to pulse and burst energy is carried out in one processing step. In particular, it is conceivable that a previously determined reference value of the ratio of material removal to pulse and burst energy is compared with the determined ratio of material removal to pulse and burst energy in one processing step. Preferably, a ratio of material removal to pulse and burst energy is determined in one operating step, whereby the largest proportion of the pulse and burst energy is converted into material removal energy.In particular, the greater the proportion of ablation energy to pulse and burst energy, the greater the ablation on the substrate surface for an electrochemical cell. This allows for a particularly advantageous reduction in energy density and the achievement of beneficial properties with regard to manufacturing control and energy savings.

[0017] Furthermore, it is proposed that in at least one processing step, the temporal energy distribution of the pulse and burst energy is adjusted to focus the material removal energy. Preferably, in one processing step, the temporal energy distribution of the pulse and burst energy is adjusted to an optimal ratio between material removal and pulse and burst energy. Preferably, in one processing step, the temporal energy distribution of the pulse and burst energy is adjusted to at least one pulse peak. In this context, "optimal" means the greatest possible material removal with the lowest possible pulse and burst energy. Preferably, in one processing step, the pulse and burst energy is adjusted to at least one pulse peak. Alternatively, in one processing step, the pulse and burst energy is adjusted to multiple pulse peaks.Preferably, the maximum pulse peak energy is adjusted in a processing step to achieve the optimal ratio between material removal to pulse and burst energy. This allows for a particularly advantageous reduction in energy density and the achievement of beneficial properties with regard to production control and energy savings. Particularly advantageous properties with regard to heat accumulation and energy utilization can be achieved. Furthermore, it is proposed that, in at least one processing step, the decrease in energy density is compensated for by adapting the pulse and burst energy using a larger number of laser pulses. Preferably, each laser pulse in a processing step has a pulse peak. Preferably, in a processing step, several laser pulses, each with a pulse peak, are generated to compensate for the temporal adaptation of the pulse and burst energy and the resulting decrease in energy density.Preferably, the laser pulses have a constant duration in a processing step. It is particularly conceivable that the duration of the laser pulses is variable. Preferably, the duration of the laser pulses is influenced by adapting the pulse and burst energy. Preferably, each laser pulse is individually adjusted to the optimal ratio between ablation and pulse and burst energy. Preferably, in a processing step, the pulse and burst energy of one laser pulse is set independently of another laser pulse. Preferably, in a processing step, the pulse and burst energy of each laser pulse is automatically adjusted to the optimal ratio between ablation and pulse and burst energy. Alternatively, it is conceivable that all laser pulses have identical pulse and burst energies in a processing step.This allows for a particularly advantageous reduction in energy density and the achievement of beneficial properties with regard to production control and energy savings. Advantageous properties can also be achieved with regard to heat accumulation and energy utilization.

[0018] According to a further embodiment, it is proposed that the GHz burst laser be used for multi-beam processing in at least one processing step. Preferably, several through-holes are created simultaneously in one processing step. Alternatively, it is conceivable that, in one processing step, a through-hole is created on a further substrate for an electrochemical cell at least substantially in parallel with the creation of a through-hole on a first substrate for an electrochemical cell. Preferably, several laser beams are generated by a processing unit in one processing step and used in different application areas. Particularly preferably, the laser beam generated by the processing unit is used in a parallel process in one processing step.Preferably, in a processing step, the energy saved by adapting the pulse and burst energy over time is used for parallel processing by parallelizing the laser beam. In particular, the processing time in a processing step is reduced by a factor of x (x = number of beams) of the laser beams generated by parallelization. This allows for particularly advantageous properties with regard to production time and energy utilization. In particular, an advantageous processing device can be achieved.

[0019] Furthermore, the invention relates to a processing device for carrying out a method, comprising at least one processing unit, in particular a laser drilling unit, wherein at least one through-hole is created in the substrate for an electrochemical cell by means of the processing unit, and comprising at least one control unit. It is proposed that the processing unit comprises a GHz burst laser. Preferably, the GHz burst laser comprises at least one mirror. In particular, it is conceivable that the GHz burst laser comprises several narrow mirrors. Preferably, the control unit is configured for temporal adaptation of the pulse and burst energy generated by the processing unit. Preferably, the mirrors of the GHz burst laser are arranged in parallel. Alternatively, any other arrangement of the mirrors in a GHz burst laser that appears sensible to a person skilled in the art is conceivable.Preferably, the processing unit is arranged at least substantially parallel to a substrate for an electrochemical cell. "Substantially parallel" here refers in particular to an alignment of a direction relative to a reference direction, especially in a plane, wherein the direction has a deviation from the reference direction of preferably less than 15°, advantageously less than 10°, and particularly advantageously less than 5°. This allows for the provision of a particularly advantageous processing device. In particular, it enables advantageous processing of a substrate for an electrochemical cell.

[0020] Furthermore, a solid-state fuel cell with a substrate for an electrochemical cell is produced by means of a method and / or a device according to the invention. Preferably, the solid-state fuel cell has an anode and a cathode. In particular, an electrolyte is arranged between the anode and the cathode. Preferably, the substrate for an electrochemical cell is configured to provide a base for the electrolyte. Preferably, the solid-state fuel cell is configured to convert the chemical reaction energy of a continuously supplied fuel and an oxidant into electrical energy. For example, hydrogen is used as the fuel and oxygen as the oxidant. Alternatively, other fuels that would appear suitable to a person skilled in the art, such as methanol, butane, and / or natural gas, are also conceivable.Preferably, in a process step of the solid-state fuel cell, electrical energy is generated between the anode and the cathode. Preferably, the anode releases electrons from the fuel. Preferably, the electrons are guided to the cathode via a connecting element. In particular, this movement of electrons from anode to cathode generates the electrical energy. Preferably, the electrons in the cathode are transferred to the oxidizing agent and split the oxidizing agent. The negatively charged oxidizing agent is attracted, in particular, by the substrate of an electrochemical cell to the positively charged protons of the fuel. Preferably, water and exhaust air are formed as end products of the chemical reaction. This allows for the provision of a particularly advantageous solid-state fuel cell.

[0021] The processing device according to the invention is not intended to be limited to the application and embodiment described above. In particular, the processing device according to the invention may, to achieve a functionality described herein, have a different number of individual elements, components, units, and process steps than those specified herein. Furthermore, values ​​within the specified limits of the value ranges stated in this disclosure are also considered disclosed and freely usable.

[0022] Drawing. Further advantages will become apparent from the following drawing description. The drawing shows two exemplary embodiments of the invention. The drawing, the description, and the claims contain numerous features in combination. A person skilled in the art will expediently consider the features individually and combine them into meaningful further combinations.

[0023] They show:

[0024] Fig. 1 shows a solid-state fuel cell with a substrate for an electrochemical cell produced using a method and / or device according to the invention in a schematic representation.

[0025] Fig. 2 shows a machining device in a schematic representation,

[0026] Fig. 3 shows a schematic flowchart of a method for operating a machining device according to the invention.

[0027] Fig. 4 shows a performance curve diagram in a schematic representation and

[0028] Fig. 5 shows an alternative schematic flowchart of a method for operating a machining device according to the invention.

[0029] Description of the exemplary implementations

[0030] Fig. 1 shows a solid-state fuel cell 26a with a substrate for an electrochemical cell 16a produced by a method and / or device according to the invention. The solid-state fuel cell 26a has an anode 28a and a cathode 30a. The substrate for an electrochemical cell 16a is arranged between the anode 28a and the cathode 30a. The solid-state fuel cell 26a is configured to convert the chemical reaction energy of a continuously supplied fuel 32a and an oxidizing agent 34a into electrical energy. Hydrogen is used as the fuel 32a and oxygen as the oxidizing agent 32a. Alternatively, other fuels 32a that would be suitable to a person skilled in the art, for example, methanol, butane, and / or natural gas, are also conceivable.In a process step of the solid-state fuel cell 26a, electrical energy is generated between the anode 28a and the cathode 30a. The anode 28a releases an electron 36a from the fuel 32a. The electrons 36a are conducted to the cathode 30a via a connecting element 38a. This movement of the electrons 36a from the anode 28a to the cathode 30a generates the electrical energy. The electrons 36a in the cathode 30a are transferred to the oxidizing agent 34a and split the oxidizing agent 34a. The negatively charged oxidizing agent 34a is attracted by the positively charged protons 40a of the fuel 32a through the substrate for an electrochemical cell 16a. The end products of the chemical reaction include, for example, water 42a and exhaust air 44a.

[0031] Fig. 2 shows a machining device 10a for carrying out a method according to the invention. The machining device 10a is configured to machine a substrate for an electrochemical cell 16a. The machining device 10a is designed in multiple parts. A non-clamping machining process is carried out with the machining device 10a. Furthermore, the machining device 10a has a holder for the substrate for an electrochemical cell 16a. In a machining step 18a, the substrate 16a is directly machined. Alternatively, indirect machining of the substrate 16a by the machining device 10a is also conceivable. The machining device 10a is configured to carry out all necessary steps, for example, a machining step 18a.

[0032] The processing device 10a has a processing unit 12a which transfers thermal energy into the substrate for an electrochemical cell 16a during processing. The processing unit 12a has a non-clamping tool. The processing unit 12a is designed in multiple parts. The processing unit 12a is configured to generate a laser pulse 24a. The processing unit 12a is configured to generate a single laser pulse 24a and / or several successive laser pulses 24a. The processing unit 12a is configured as a laser drill. The processing unit 12a is configured to perform processing of at least one surface 52a of the substrate for an electrochemical cell 16a. The processing unit 12a is configured to create a through-hole 14a in a substrate for an electrochemical cell 16a.The laser pulse 24a generated by the processing unit 12a locally introduces energy into the substrate for an electrochemical cell 16a. The processing unit 12a forms a through-hole 14a in the surface 52a of the substrate for the electrochemical cell 16a. The through-hole 14a is arranged perpendicular to a principal plane of extension of the substrate for the electrochemical cell 16a. The processing unit 12a focuses the laser pulse 24a.

[0033] The substrate for an electrochemical cell 16a is used in a solid oxide fuel cell 26a. Alternatively, the substrate 16a is intended for use in an electrolyte cell. An electrolyte 88 is arranged between the anode 28 and the cathode 30. The substrate for an electrochemical cell 16a is designed to provide a base for the electrolyte 88. The substrate for an electrochemical cell 16a is designed to conduct oxygen ions. The substrate for an electrochemical cell 16a has an insulating effect against electrons 36a. The substrate 16a is made of a metallic material. Alternatively, another non-shrinking material is also conceivable. Furthermore, a substrate 16a made of a pre-sintered ceramic is conceivable.

[0034] The processing unit 12a comprises at least one laser capable of emitting gHz bursts, wherein the individual laser pulses within the burst train are ps laser pulses. In at least one processing step 18, the substrate for an electrochemical cell 16 is processed using the gHz burst laser. The processing unit 12a generates a laser beam 46a. In processing step 18a, the laser beam 46a generated by the processing unit 12a passes through the plate-shaped medium several times in a zigzag pattern between at least two narrow mirrors. In particular, it is conceivable that the GHz burst laser comprises several narrow mirrors. The mirrors of the gHz burst laser are arranged in parallel. Alternatively, any other arrangement of the mirrors in a GHz burst laser that appears sensible to a person skilled in the art is conceivable. A GHz burst laser generates a laser beam 46a in an ultrashort light pulse in the picosecond range.The GHz burst laser generates several consecutive laser pulses 24a. These multiple laser pulses 24a have different process parameters in a processing step 18a. The GHz burst laser has a higher average power than the average power of a fiber laser.

[0035] The machining device 10a has a control unit 20a. The control unit 20a continuously adjusts the process parameters throughout the entire machining step 18a. Specifically, it is conceivable that the control unit 20a makes adjustments before a machining step 18a and no changes are made by the control unit 20a during machining step 18a. A user can manually change the process parameters of the machining unit 12a before and during a machining step 18a. The control unit 20a automatically changes the process parameters of the machining unit 12a. Specifically, it is conceivable that the control unit 20a adjusts the process parameters during a machining step 18a based on a preset parameter set.

[0036] Fig. 3 shows a schematic flowchart of a method for operating a processing device according to the invention with at least one processing unit 12a, in particular a laser drilling unit, and with at least one control unit 20a, by means of which parameters of the processing unit 12a are adjusted. In at least one processing step 18a, at least one through-hole 14a is created in the substrate for an electrochemical cell 16a by means of the processing unit 12a. The processing unit 12a has at least a 1 GHz burst laser, wherein in the at least one processing step 18a the substrate for an electrochemical cell 16a is processed by means of the pico-slab laser. In a processing step 18a, direct processing of the substrate for an electrochemical cell 16a takes place.

[0037] The laser beam 42a has a pulse and burst energy 22a. In at least one processing step 18a, the pulse and burst energy 22a is adapted over time by means of the control unit 20a. In another processing step 18a, the pulse and burst energy 22a is adapted continuously over time by means of the control unit 20a. It is particularly conceivable that in another processing step 18a, the pulse and burst energy 22a is adapted randomly over time by means of the control unit 20a. In another processing step 18a, the energy distribution of the pulse is influenced by the adaptation of the pulse and burst energy 22a over time. In another processing step 18a, the pulse and burst energy 22a is reduced to zero over time. The pulse and burst energy curve 22a shows a pulse peak 48a.The duration of the pulse peaks 48a is influenced by adapting the pulse and burst energy 22a. In particular, it is conceivable that the maximum power of the pulse peaks 48a is controlled in a processing step 18a by a temporal adaptation of the pulse and burst energy 22a.

[0038] In at least one processing step 18a, the control unit 20a determines an optimal adaptation of the pulse and burst energy 22a of the processing unit 12a. In one processing step 18a, the pulse and burst energy E puis 22a into a erosion energy E abtrag , into an energy of accumulation E akkum and into an energy which reflects E ref i, divided. The energy of accumulation E akkum and the energy of reflection E refi is preferably zero. The largest fraction of the pulse and burst energy 22a is present as ablation energy E. abtragtrained. In a processing step 18a, the pulse and burst energy 22a is reduced in order to increase the proportion of the removal energy to the pulse and burst energy 22a. In particular, it is conceivable to increase the pulse and burst energy 22a in a processing step 18a in order to achieve a maximum proportion of the removal energy, whereby in this case the proportion of the energy of reflection and the energy of accumulation must have the lowest possible value.

[0039] In at least one processing step 18a, an optimal ratio of material removal to pulse and burst energy 22a is determined by the control unit 20a. The ratio of material removal to pulse and burst energy 22a is automatically determined by the control unit 20a in processing step 18a. Continuous monitoring of the ratio of material removal to pulse and burst energy 22a is performed in processing step 18a. In particular, it is conceivable that a previously determined reference value of the ratio of material removal to pulse and burst energy 22a is compared with the determined ratio of material removal to pulse and burst energy 22a in processing step 18a. A ratio of material removal to pulse and burst energy 22a is determined in an operating step 18a, whereby the largest proportion of the pulse and burst energy 22a is converted into material removal energy.The greater the proportion of the ablation energy to the pulse and burst energy 22a, the greater the ablation on the surface 52a of the substrate for an electrochemical cell 16a.

[0040] In at least one processing step 18a, the temporal energy distribution of the pulse and burst energy 22a is adjusted to focus the ablation energy. In a processing step 18a, the temporal energy distribution of the pulse and burst energy 22a is adjusted to an optimal ratio between ablation and pulse and burst energy 22a. In a processing step 18a, a temporal energy distribution of the pulse and burst energy 22a is applied to at least one pulse peak 48a. In a processing step 18a, the pulse and burst energy 22a is adjusted to at least one pulse peak 48a. The maximum energy of the pulse and burst energy 22a is set as pulse peak 48a in a processing step 18a to achieve the best ratio between ablation and pulse and burst energy 22a.

[0041] In at least one processing step 18a, the decrease in energy density is compensated for by adapting the pulse and burst energy 22a using a larger number of laser pulses 24a. Each laser pulse 24a has a pulse peak 48a in processing step 18a. To compensate for the temporal adaptation of the pulse and burst energy 22a and the resulting decrease in energy density, several laser pulses 24a, each with a pulse peak 48a, are generated in processing step 18a. Fig. 3 shows a power diagram of a laser beam with several laser pulses 24a. The power diagram has an abscissa 54a and an ordinate 50a. The abscissa 54a represents the unitemporal profile 50a. The ordinate 54a represents the pulse and burst energy 22a. The laser pulses 24a have a constant duration in processing step 18a. It is particularly conceivable that the duration of the laser pulses 24a is variable.By adapting the pulse and burst energy 22a, the duration of the laser pulses 24a is influenced. Each laser pulse 24a is individually adjusted to the optimal ratio between ablation and pulse and burst energy 22a (see Fig. 3). In a processing step 18a, the pulse and burst energy of one laser pulse 24a is adjusted independently of another laser pulse 24a. The pulse peaks 48a have different maximum pulse and burst energies 22a. In a processing step 18a, the pulse and burst energy 22a of each laser pulse 24a is automatically adjusted to the optimal ratio between ablation and pulse and burst energy 22a. Alternatively, it is conceivable that in a processing step 18a all laser pulses 24a have identical pulse and burst energies 22a.

[0042] Figure 5 shows a further embodiment of a method for operating a machining device according to the invention. The following descriptions and drawings are essentially limited to the differences between the exemplary embodiments, whereby with regard to identically designated components, in particular with regard to components with the same reference numerals, reference may also be made to the drawings and / or the description of the other exemplary embodiments, especially Figures 1 to 4. To distinguish the exemplary embodiments, the letter a is appended to the reference numerals of the exemplary embodiment in Figures 1 to 4. In the exemplary embodiment of Figure 5, the letter a is replaced by the letter b.

[0043] Fig. 5 shows an alternative schematic flowchart of a method for operating a processing device according to the invention. In processing step 18b, a further feature is added to the embodiments in Fig. 4. In at least one processing step 18b, the GHz burst laser is used for multi-beam processing. In processing step 18b, several through-holes 14b are produced simultaneously. Alternatively, it is conceivable that in processing step 18b, a through-hole 14b is produced on a further substrate for an electrochemical cell 16b at least substantially in parallel with the production of a through-hole 14b on a first substrate for an electrochemical cell 16b. In processing step 18b, several laser beams are generated by means of a processing unit and used in different application areas.In processing step 18b, the laser beam generated by processing unit 12b is used by means of parallelization. The laser beam 42b has a pulse and burst energy 22b. In processing step 18b, the energy saved by the temporal adaptation of the pulse and burst energy 22b is used for parallel processing by means of parallelization of the laser beam. In processing step 18b, the processing time is shortened by a factor x (x = number of beams) of the laser beams generated by parallelization.

Claims

Claims 1. Method for operating a processing device (10), with at least one processing unit (12), in particular a laser drilling unit, wherein in at least one processing step (18) at least one through-hole (14) is introduced into the substrate for an electrochemical cell (16) by means of the processing unit (12), and with at least one control and regulation unit (20) by means of which parameters of the processing unit (12) are adapted, characterized in that the processing unit (12) has at least one laser that can emit gHz bursts, wherein the individual laser pulses within the burst train are ps laser pulses, wherein in the at least one processing step (18) the substrate for an electrochemical cell (16) is processed by means of the gHz burst laser.

2. Method according to claim 1, characterized in that in at least one processing step (18) a temporal adaptation of the pulse and burst energy (22) is carried out by means of the control and regulation unit (20).

3. Method according to claim 1 or 2, characterized in that in at least one processing step (18) the control and regulation unit (20) determines an optimal adaptation of the pulse and burst energy (22) of the processing unit (12).

4. Method according to claim 3, characterized in that in at least one processing step (18) an optimal ratio of material removal to pulse and burst energy (22) is achieved by the control and The control unit (20) is determined.

5. Method according to one of the preceding claims, characterized in that in at least one processing step (18) the temporal energy distribution of the pulse and burst energy (22) is adjusted to focus the ablation energy.

6. Method according to one of the preceding claims, characterized in that in at least one processing step (18) the decrease in energy density is compensated by adapting the pulse and burst energy (22) by means of a larger number of laser pulses (24).

7. Method according to one of the preceding claims, characterized in that in at least one processing step (18) the GHz burst laser multi-beam processing is used.

8. Processing device (10) for carrying out a method according to one of the preceding claims, comprising at least one processing unit (12), in particular a laser drilling unit, wherein at least one through-hole (14) is introduced into the substrate for an electrochemical cell (10) by means of the processing unit (12), and comprising at least one control and regulation unit (20), characterized in that the processing unit (12) has a GHz burst laser.

9. Solid fuel cell (26) with a substrate for an electrochemical cell (16) produced by means of a device according to claim 8 and / or a method according to one of claims 1 to 7.

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