Substrate processing apparatus and substrate processing method

Abstract

This substrate processing apparatus is for processing a substrate, and comprises: a chamber having a processing space for storing a substrate; and a mounting table for supporting the substrate in the chamber. The mounting table includes: a dielectric member having a mounting surface on which the substrate is mounted; a first heater for heating the dielectric member; a base provided below the dielectric member and having a flow path through which a refrigerant circulates inside; and a coating member covering at least a portion of a side surface of the base so that the portion is not exposed to the processing space.

Description

Substrate processing apparatus and substrate processing method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] Patent Document 1 discloses an etching apparatus for etching a silicon-containing film on a wafer, in which the flow rate of an etching gas supplied to the silicon-containing film is controlled to control the in-plane distribution of the etching amount of the silicon-containing film.

[0003] Japanese Patent Application Publication No. 2017-238355

[0004] The technology according to the present disclosure improves the in-plane uniformity of the etching amount of a substrate in a substrate processing apparatus.

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, comprising: a chamber having a processing space for accommodating the substrate; and a mounting table for supporting the substrate within the chamber, wherein the mounting table comprises a dielectric member having a mounting surface on which the substrate is placed, a first heater for heating the dielectric member, a base provided below the dielectric member and having a flow path through which a coolant circulates, and a covering member for covering at least a portion of a side surface of the base so that the portion is not exposed to the processing space.

[0006] According to the present disclosure, in a substrate processing apparatus, it is possible to improve the in-plane uniformity of the etching amount of a substrate.

[0007] Fig. 1 is a longitudinal sectional view showing an outline of the configuration of a substrate processing apparatus according to the present embodiment; Fig. 2 is a perspective view showing an outline of the configuration of a partition wall according to the present embodiment; Fig. 3 is a longitudinal sectional view showing an outline of the configuration of a mounting table according to the present embodiment; Fig. 4 is a longitudinal sectional view showing an outline of the configuration of a mounting table according to a modified example of the present embodiment; Fig. 5 is a flowchart showing an outline of the configuration of a substrate processing method according to the present embodiment; Fig. 6 is a schematic view showing an outline of the etching amount distribution of a substrate placed on a mounting table according to an example and a comparative example; Fig. 7 is a longitudinal sectional view showing an outline of the configuration of a mounting table according to a comparative example.

[0008] First, the configuration of a substrate processing apparatus according to an embodiment of the present invention will be described. Fig. 1 is a longitudinal sectional view showing the outline of the configuration of a substrate processing apparatus 1 according to this embodiment. Note that in this embodiment, the substrate processing apparatus 1 is a COR processing apparatus that performs COR processing on, for example, a substrate W.

[0009] As shown in FIG. 1, the substrate processing apparatus 1 includes an airtight chamber 10 for accommodating a substrate W, one or more mounting tables 11, 11 in this embodiment for mounting the substrate W within the chamber 10, a gas supply unit 12 for supplying processing gas from above each mounting table 11 toward the mounting table, a partition wall 13 surrounding the outside of each mounting table 11, 11 and configured to be freely raised and lowered, a lifting mechanism 14 fixed to the bottom surface of the chamber 10 for raising and lowering the partition wall 13, and an exhaust unit 15 for evacuating the inside of the chamber 10.

[0010] The chamber 10 is a container made of a metal such as aluminum or stainless steel and having, for example, a substantially rectangular parallelepiped shape as a whole. The chamber 10 has, for example, a substantially rectangular shape in plan view, a cylindrical sidewall 20 with open top and bottom surfaces, a ceiling plate 21 that airtightly covers the top surface of the sidewall 20, and a bottom plate 22 that covers the bottom surface of the sidewall 20. A sealing member (not shown) that keeps the interior of the chamber 10 airtight is provided between the top end surface of the sidewall 20 and the ceiling plate 21. The chamber 10 is also provided with a heater (not shown), and the bottom plate 22 is provided with a heat insulating material (not shown).

[0011] The mounting table 11 is formed in a substantially cylindrical shape and includes an upper table 30 having a mounting surface 11a on which the substrate W is placed, and a lower table 31 fixed to the bottom plate 22 and supporting the upper table 30. The upper table 30 includes an electrostatic chuck 32. The electrostatic chuck 32 includes a dielectric member 33 having the mounting surface 11a, and a base 34 provided below the dielectric member 33. The upper table 30 also includes a covering member 35 that covers at least a portion of the side surface of the dielectric member 33 so that it is not exposed to the processing space S. An example configuration of the mounting table 11 will be described in detail later.

[0012] A support pin unit (not shown) is provided at a position below the mounting table 11 on the bottom plate 22, and the substrate W on the mounting table 11 can be transferred between the support pins (not shown) driven up and down by this support pin unit and a transport mechanism (not shown) provided outside the substrate processing apparatus 1.

[0013] The gas supply unit 12 includes a shower head 40 that supplies a processing gas to the substrate W placed on the mounting table 11. The shower heads 40 are individually provided on the lower surface of the ceiling plate 21 of the chamber 10, facing each mounting table 11. Each shower head 40 includes, for example, a substantially cylindrical frame 41 that is open at the bottom and supported on the lower surface of the ceiling plate 21, and a substantially disk-shaped shower plate 42 that is fitted into the inner surface of the frame 41. Note that the shower plate 42 preferably has a diameter that is at least larger than the diameter of the substrate W so as to uniformly supply the processing gas to the entire surface of the substrate W placed on the mounting table 11. The shower plate 42 is provided at a predetermined distance from the ceiling of the frame 41. This forms a space 43 between the ceiling of the frame 41 and the upper surface of the shower plate 42. The shower plate 42 also includes a plurality of openings 44 that penetrate the shower plate 42 in the thickness direction.

[0014] A gas supply source 46 is connected to a space 43 between the ceiling of the frame 41 and the shower plate 42 via a gas supply pipe 45. The gas supply source 46 supplies, as a processing gas, fluorine (F ２ ) gas, hydrogen fluoride (HF) gas, or ammonia (NH ３ ) gas, or a dilution gas or purge gas such as argon (Ar) gas. The gas supplied from the gas supply source 46 is uniformly supplied to the substrates W placed on each of the mounting tables 11, 11 through the space 43 and the shower plate 42. The gas supply pipe 45 is provided with a flow rate adjustment mechanism 47 that adjusts the amount of processing gas supplied, so that the amount of processing gas supplied to each substrate W can be individually controlled. The shower head 40 may be, for example, a post-mix type that can individually supply multiple types of processing gas without mixing them.

[0015] 2, the partition wall 13 has two cylindrical portions 50, 50 that individually surround the two mounting tables 11, 11, an upper flange portion 51 provided at the upper ends of the cylindrical portions 50, 50, and a lower flange portion 52 provided at the lower ends of the cylindrical portions 50, 50. The inner diameter of the cylindrical portion 50 is set larger than the outer surface of the mounting table 11, so that a gap is formed between the cylindrical portions 50, 50 and the mounting table 11.

[0016] As shown in FIG. 1 , a seal member 53 such as an O-ring is provided on the upper surface of the upper flange 51. The seal member 53 airtightly seals the gap between the upper flange 51 and the frame 41 when the partition 13 is raised by the lifting mechanism 14 and the upper flange 51 and the frame 41 come into contact with each other. A seal member 53 is provided on each of the mounting tables 11. By raising the partition 13 and bringing the frame 41 into contact with the seal member 53, a processing space S is formed surrounded by the mounting table 11, the partition 13, and the shower head 40. In one embodiment, a heater (not shown) is provided in the exhaust section of the cylindrical portion 50 of the partition 13, and the cylindrical portion 50 is heated to, for example, 100° C. to 150° C. This heating prevents foreign matter contained in the processing gas from adhering to the partition 13.

[0017] Furthermore, when the partition wall 13 is lowered to the substrate transfer position by the lifting mechanism 14, the upper surface of the upper flange portion 51 reaches a height that is approximately flush with the upper surface of the mounting table 11. As a result, by lowering the partition wall 13, the substrate W lifted from the upper surface of the mounting table 11 by the support pin unit described above can be accessed from outside the chamber 10.

[0018] The lifting mechanism 14 that lifts and lowers the partition wall 13 includes an actuator 60 arranged outside the chamber 10, a drive shaft 61 connected to the actuator 60, which penetrates the bottom plate 22 of the chamber 10 and extends vertically upward within the chamber 10, and a plurality of guide shafts 62 whose tips are connected to the partition wall 13 and whose other ends extend to the outside of the chamber 10. The guide shafts 62 prevent the partition wall 13 from tilting when the partition wall 13 is lifted and lowered by the drive shafts 61.

[0019] The lower end of an expandable bellows 63 is airtightly connected to the drive shaft 61. The upper end of the bellows 63 is airtightly connected to the underside of the bottom plate 22. Therefore, when the drive shaft 61 moves up and down, the bellows 63 expands and contracts in the vertical direction, thereby maintaining the inside of the chamber 10 airtight. Note that a sleeve (not shown), for example, fixed to the bottom plate 22, is provided between the drive shaft 61 and the bellows 63 to function as a guide during the lifting and lowering operation.

[0020] A bellows 64, which is expandable and contractible like the drive shaft 61, is connected to the guide shaft 62. The upper end of the bellows 64 straddles the bottom plate 22 and the side wall 20 and is airtightly connected to both. Therefore, when the guide shaft 62 moves up and down in conjunction with the movement of the partition wall 13 by the drive shaft 61, the bellows 64 expands and contracts in the vertical direction, thereby maintaining the airtightness inside the chamber 10. As in the case of the drive shaft 61, a sleeve (not shown) is provided between the guide shaft 62 and the bellows 64 to function as a guide during the movement of the guide shaft 62 up and down.

[0021] Furthermore, since the upper end of the bellows 64 is the fixed end, and the lower end of the bellows 64 connected to the guide shaft 62 is the free end, when the chamber 10 becomes negative pressure, a force compressing the bellows 64 in the vertical direction is applied due to the pressure difference between the inside and outside of the bellows 64. Therefore, the guide shaft 62 connected to the free end of the bellows 64 rises vertically upward as the bellows 64 contracts. This causes the partition wall 13 to rise evenly, ensuring appropriate contact between the seal member 53 and the frame 41, thereby ensuring a seal between the partition wall 13 and the frame 41. Similarly, appropriate contact between the seal member 54 and the protrusion 71 ensures a seal between the partition wall 13 and the protrusion 71. Note that a force pressing the guide shaft 62 downward acts on the guide shaft 62 due to a reaction force from the bellows 64 as an elastic member and the weight of the guide shaft 62 itself. However, the differential pressure acting on the guide shaft 62 can be adjusted by appropriately setting the diameter of the bellows 64. The protruding portion 71 may be a part of the inner wall (as shown in the example), or may be the mounting table 11 (not shown).

[0022] Furthermore, the upper end of the protrusion 71 is in airtight contact with the lower surface of the mounting table 11 via the seal member 55. When the partition wall 13 is raised and the protrusion 71 is brought into contact with the partition wall 13 via the seal member 54, the seal between the protrusion 71 and the partition wall 13 can be reliably secured. This prevents the process gas from being exhausted from the gap between the outer periphery of the mounting table 11 and the partition wall 13 when the process gas in the processing space S is exhausted, and stabilizes the flow of the process gas near the outer periphery of the mounting table 11.

[0023] The exhaust unit 15 has an exhaust mechanism 90 that exhausts the inside of the chamber 10. The exhaust unit 15 has an exhaust port 91 provided on the bottom plate 22 of the chamber 10 outside the partition wall 13. That is, the exhaust port 91 is provided on the bottom plate 22 outside the partition wall 13 at a position that does not overlap with the partition wall 13 in a plan view. The exhaust port 91 is in communication with an exhaust pipe 92.

[0024] The exhaust mechanism 90, exhaust port 91, and exhaust pipe 92 are shared by the two processing spaces S defined by the two partition walls 13. That is, the two processing spaces S are connected to a common exhaust space V formed below the chamber 10, and processing gas flowing into this exhaust space V is exhausted by the exhaust mechanism 90 via the common exhaust pipe 92. The exhaust pipe 92 is provided with a control valve 93 that adjusts the amount of gas exhausted by the exhaust mechanism 90. In addition, the ceiling panel 21 is provided with a pressure measurement mechanism (not shown) for measuring the pressure in each processing space S of the mounting tables 11. The opening degree of the control valve 93 is controlled, for example, based on a value measured by the pressure measurement mechanism.

[0025] The substrate processing apparatus 1 described above is provided with at least one controller 100, as shown in FIG. 1 . The controller 100 processes computer-executable instructions that cause the substrate processing apparatus 1 to perform various processes described herein. The controller 100 may be configured to control each element of the substrate processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 100 may be included in the substrate processing apparatus 1. The controller 100 may include a processor, a storage unit, and a communication interface. The controller 100 is implemented, for example, by a computer. The processor may be configured to read from the storage unit a program that provides logic or routines that enable the various control operations to be performed, and to execute the read program to perform the various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processor for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the substrate processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0026] <Placement Table> A detailed configuration example of the placement table 11 according to this embodiment will be described with reference to FIGS. 1 and 2. The dielectric member 33 is made of, for example, ceramic. A heater electrode 36 serving as a first heater according to this embodiment is provided inside the dielectric member 33. The heater electrode 36 heats the dielectric member 33 when power is supplied from a power supply unit (not shown). In addition, an attraction electrode (not shown) is provided inside the dielectric member 33, and attracts the substrate W when power is supplied from a power supply unit (not shown).

[0027] The base 34 is made of, for example, aluminum. A flow path 38 is formed inside the base 34, through which a coolant supplied from a chiller 37 circulates. The coolant is set to a desired temperature by the chiller 37, and is supplied to the flow path 38 of the base 34 to cool the base 34.

[0028] The covering member 35 is made of, for example, aluminum or aluminum with a coating (for example, Ni plating). In this embodiment, the covering member 35 includes a first side wall portion 35a that covers the side surface 34a of the base 34, a bottom wall portion 35b that covers the lower surface 34b of the base 34, and a second side wall portion 35c that contacts the lower platform 31. The first side wall portion 35a, the bottom wall portion 35b, and the second side wall portion 35c of the covering member 35 have a ring shape that extends in the circumferential direction of the base 34 or the lower platform 31.

[0029] Sealing members 110 such as O-rings are provided between the dielectric member 33 and the base 34, between the dielectric member 33 and the covering member 35, and between the base 34 and the covering member 35. The gap G between the covering member 35 and the base 34 is airtightly sealed by the sealing members 110 from the processing space S. As a result, portions of the base 34, including the side surface 34a and the lower surface 34b, are not exposed to the processing space S and do not come into contact with the gas supplied to the processing space S.

[0030] In this embodiment, the gap G between the base 34 and the covering member 35 acts as a heat shield. The gap G separates the base 34 and the covering member 35 except for the portion where they contact via the sealing member 110, thereby reducing heat conduction between the base 34 and the covering member 35. Note that the heat shield is not limited to the gap G, and any member made of a desired material that reduces heat conduction between the base 34 and the covering member 35 can be provided as the heat shield.

[0031] The covering member 35 according to this embodiment is provided with an annular heater 120 as a second heater. The annular heater 120 is provided inside the covering member 35, i.e., on the side facing the base 34. The annular heater 120 is provided extending in the circumferential direction along the covering member 35. Note that the annular heater 120 according to this embodiment is provided on the second side wall portion 35c inside the covering member 35, facing the lower base 31, but the position of the heater is not limited thereto. The annular heater 120 heats the covering member 35 by receiving power from a power supply unit (not shown).

[0032] The heater electrode 36, chiller, and annular heater 120 are set to desired temperatures by, for example, the control unit 100, and are controlled to adjust the temperatures of the target components based on the set temperatures. The heater electrode 36 and chiller 37 can be controlled so that the temperature of the substrate W on the mounting table 11 is, for example, −20° C. to 140° C.

[0033] <Modification of Mounting Table> A mounting table 200 according to a modification of this embodiment will be described below with reference to Fig. 4. In Fig. 4, the mounting table 200 includes a dielectric member 33 and a base 34, similar to the mounting table 11 described above, and also includes a covering member 210. The covering member 210 includes a first side wall portion 210a that covers a portion of the side surface 34a of the base 34, a bottom wall portion 35b that covers the lower surface 210b of the base 34, and a second side wall portion 210c that contacts the lower table 31. The mounting table 200 does not include the annular heater 120 that is provided on the mounting table 11.

[0034] <Substrate Processing Method> An example of a substrate processing method that can be performed using the substrate processing apparatus 1 configured as described above will be described. As the substrate processing method according to this embodiment, a breakthrough process for removing a native oxide film formed on a substrate W will be described. Note that the following description will be given using an example of a substrate processing apparatus 1 that includes a mounting table 11.

[0035] First, in step ST11, with the gate valve open, a substrate W is loaded into the chamber 10 and placed on the mounting table 11. After the substrate W is placed on the mounting table 11, the gate valve is closed to seal the chamber 10, and an etching processing space S is formed in the chamber 10.

[0036] Next, in process ST12, with the substrate W placed on the mounting table 11, the heater electrode 36 and the chiller are used to adjust the temperatures of the dielectric member 33 and the base 34. At this time, the heater electrode 36 and the chiller 37 are controlled to different set temperatures. In this embodiment, the heater electrode 36 and the chiller 37 are controlled so that a first temperature difference, which is the difference between the set temperature of the heater electrode 36 and the set temperature of the chiller 37, is, for example, 40° C. Note that the first temperature difference is not limited to the above temperature, and the technology of the present disclosure is applicable when the set temperature of the heater electrode 36 is higher than the set temperature of the chiller 37.

[0037] Furthermore, in process ST12, the temperature of the covering member 35 is adjusted using the annular heater 120. In this embodiment, the set temperature of the annular heater 120 is controlled so that a second temperature difference, which is the temperature difference between the set temperature of the heater electrode 36 and the set temperature of the annular heater 120, is smaller than the first temperature difference. In this embodiment, the second temperature difference is, for example, 5°C, which is smaller than the first temperature difference of 40°C.

[0038] Next, in step ST13, the pressure in the chamber 10 is adjusted while NH ３ Gas and HF gas are supplied into the chamber 10 to remove the native oxide film formed on the substrate W. ３ In addition to the HF gas and the NH gas, Ar gas may be supplied as a dilution gas. ３It is preferable to first supply gas into the chamber 10 and stabilize the pressure before introducing the HF gas.

[0039] Next, in step ST14, the chamber 10 is evacuated while Ar gas is supplied as a purge gas into the chamber 10, thereby purging the inside of the chamber 10. The breakthrough process is completed by the above steps ST11 to ST14.

[0040] In one embodiment, after the step ST14 is performed, an etching gas such as F is continuously introduced into the chamber 10. ２ The etching gas is supplied. At this time, Ar gas may be added as a dilution gas. The silicon-containing film, for example, a SiGe film, on the substrate W is etched by the etching gas.

[0041] The technical significance of the substrate processing apparatus 1 and substrate processing method according to the present embodiment will be described below with reference to a comparative example of a mounting table 1000. Fig. 7 is a cross-sectional view showing an outline of the configuration of the mounting table 1000 according to the comparative example.

[0042] Unlike the mounting table 11 of the present embodiment, the mounting table 1000 of the comparative example does not have the covering member 35, and the base 34 is not covered with the covering member 35. In the mounting table 1000 of the comparative example, portions of the base 34, including the side surface 34a and the lower surface 34b, are exposed to the processing space S and come into contact with gas supplied to the processing space S when the substrate W is processed.

[0043] When substrate processing is performed using the mounting table 1000 according to the comparative example, the heater electrode 36 and the chiller are used to adjust the temperatures of the dielectric member 33 and the base 34 with the substrate W placed on the mounting table 1000. At this time, the heater electrode 36 and the chiller 37 may be controlled to different set temperatures. In the comparative example, the heater electrode 36 and the chiller 37 may be controlled so that a first temperature difference, which is the temperature difference between the set temperature of the heater electrode 36 and the set temperature of the chiller 37, is, for example, 40°C.

[0044] 6 is a schematic diagram showing an outline of the distribution of etching amounts of a substrate W when etching is performed on the substrate W by temperature control using the mounting tables 11, 200 (Examples 1 and 2) according to this embodiment and the mounting table 1000 according to the comparative example. In FIG. 7, areas with smaller etching amounts are indicated by dark shading, and areas with larger etching amounts are indicated by light shading. The etching amounts shown are relative amounts, and the same shaded areas between the mounting tables 11 and 1000 do not necessarily indicate that the same etching amounts are achieved.

[0045] As shown in Fig. 6, in the mounting table 1000 according to the comparative example, the etching amount near the outer periphery of the mounting surface 1000a is significantly smaller than that near the center. On the other hand, in the mounting table 11 according to the present embodiment, there is no significant difference in the etching amount between the outer periphery and the center of the mounting surface 11a. Fig. 6 shows the uniformity of the etching amount distribution (Unif. refers to the variation in the etching amount within the surface of the substrate W). Therefore, as shown in Fig. 6, the mounting table 11 according to the present embodiment has a superior uniformity in the etching amount of the substrate W placed thereon compared to the mounting table 1000 according to the comparative example.

[0046] The reason why the temperature uniformity is improved in the mounting table 11 according to this embodiment is considered to be, for example, as follows. First, when the side surface 34 a of the base 34 is exposed to the processing space S, as in the mounting table 1000 according to the comparative example, the side surface 34 a comes into contact with the gas supplied to the processing space S during processing of the substrate W. When the heater electrode 36 is set to a higher temperature and the chiller 37 is set to a lower temperature, the dielectric member 33 is adjusted to a higher temperature and the base 34 is adjusted to a lower temperature. In this case, the mounting surface 1000 a is adjusted to a desired temperature depending on the temperatures of the dielectric member 33 and the base 34. However, the side surface 34 a of the base 34 exposed to the processing space S has the temperature of the base 34 itself, which is lower than the temperature of the mounting surface 1000 a and the substrate W mounted thereon. In this state, when an etching gas is supplied to the substrate W mounted on the mounting surface 1000 a, the etching gas condenses on the side surface 34 a of the base 34, which has a relatively low temperature, near the outer periphery of the mounting surface 1000 a. As a result, the etching gas that should be supplied to the surface of the substrate W moves to the side surface 34a of the base 34, and the concentration of the etching gas decreases near the outer periphery of the mounting surface 1000a. This is thought to be why the amount of etching near the outer periphery of the mounting surface 1000a is smaller than that near the center.

[0047] In contrast, in the mounting table 11 according to this embodiment, a portion of the base 34 including the side surface 34a is covered by the covering member 35, and the portion of the base 34 including the side surface 34a is not exposed to the processing space S and does not come into contact with the gas supplied to the processing space S. In addition, the covering member 35 is heated by the annular heater 120, and the second temperature difference is controlled to be smaller than the first temperature difference. This is thought to reduce the concentration of the etching gas on the side surface 34a of the base 34, and to prevent a difference in the amount of etching between the peripheral portion and the central portion of the mounting surface 11a.

[0048] In the mounting table 200 according to this embodiment, a portion of the side surface 34a of the base 34 is exposed to the processing space S, but the remaining majority is covered by the covering member 210. Although no heater is provided to heat the covering member 210, the covering member 210 has a heat insulating portion that reduces heat conduction from the base 34. The covering member 210 also makes the second temperature difference smaller than the first temperature difference. This is thought to reduce the concentration of the etching gas on the side surface 34a of the base 34, thereby suppressing the difference in the amount of etching between the periphery and the center of the mounting surface 200a.

[0049] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0050] In one embodiment, the covering members 35, 210 according to this embodiment can be configured to cover not only the base 34 but also at least a portion of the side surface of the dielectric member 33. This can make the temperature in the portion of the mounting surface 11a, 200a near the outer circumferential edge thereof facing the processing space S more uniform, thereby improving the uniformity of the etching amount distribution.

[0051] Furthermore, the covering members 35, 210 may be provided integrally with the base 34 by coating or spraying the base 34, as long as an appropriate heat shield can be provided. If an appropriate heat shield is provided, even if the covering member is provided as a coating layer or the like, it is possible to make the second temperature difference smaller than the first temperature difference.

[0052] The substrate processing apparatus 1 according to this embodiment is more suitable for use in an apparatus that performs a process that does not involve plasma processing, such as the substrate processing method according to this embodiment. In other words, in a plasma processing apparatus that performs a process that involves plasma processing, a cover ring may be provided near the outer periphery of the electrostatic chuck to protect a dielectric member, a base, or the like from plasma incident on the mounting table. However, in an apparatus that performs a gas etching process that does not involve plasma processing, protection from plasma is not considered, and therefore, providing a configuration such as the covering members 35 and 210 according to this embodiment has not been considered. In other words, the covering ring in a plasma processing apparatus and the covering members 35 and 210 according to this embodiment have different technical significance.

[0053] Furthermore, the effects described in this specification are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0054] REFERENCE SIGNS LIST 1 substrate processing apparatus 10 chamber 11, 200 mounting table 33 dielectric member 34 base 35 covering member 36 heater electrode 37 chiller 38 flow path W substrate

Claims

1. A substrate processing apparatus for processing a substrate, comprising: a chamber having a processing space for accommodating the substrate; and a mounting table for supporting the substrate within the chamber, wherein the mounting table comprises: a dielectric member having a mounting surface on which the substrate is placed; a first heater for heating the dielectric member; a base provided below the dielectric member; a chiller for cooling the base; and a covering member for covering at least a portion of a side surface of the base so that the portion is not exposed to the processing space.

2. The substrate processing apparatus according to claim 1, wherein the covering member further covers a portion of the lower surface of the base so that the portion is not exposed to the processing space.

3. The substrate processing apparatus according to claim 2, wherein the covering member covers the entire side and bottom surfaces of the base.

4. The substrate processing apparatus according to claim 1, wherein a heat shield is provided between the base and the covering member to reduce heat conduction between the base and the covering member.

5. The substrate processing apparatus according to claim 1, further comprising a gas supply unit that supplies an etching gas to the processing space, and the processing on the substrate includes etching a film on the substrate with the etching gas supplied from the gas supply unit.

6. The substrate processing apparatus according to claim 5, wherein the etching process includes a breakthrough process in which a native oxide film on the substrate is etched with the etching gas.

7. The substrate processing apparatus according to claim 5 or 6, further comprising a control unit that controls the substrate processing apparatus to perform the processes including the etching process, wherein the control unit controls the first heater and the chiller to different set temperatures when performing the etching process.

8. The substrate processing apparatus according to any one of claims 1 to 6, wherein the mounting table has a second heater between the base and the covering member for regulating the temperature of the covering member.

9. The substrate processing apparatus of claim 7, wherein the mounting table has a second heater between the base and the covering member that regulates the temperature of the covering member, and the control unit controls the set temperature of the second heater so that the temperature difference between the first heater and the second heater is smaller than the temperature difference between the first heater and the chiller when performing the etching process.

10. A substrate processing method for processing a substrate using a substrate processing apparatus, wherein the substrate processing apparatus comprises: a chamber having a processing space for accommodating the substrate; and a mounting table for supporting the substrate within the chamber, the mounting table comprising: a dielectric member having a mounting surface on which the substrate is placed; a first heater for heating the dielectric member; a base provided below the dielectric member; a chiller for cooling the base; and a covering member for covering at least a portion of a side surface of the base so that the portion is not exposed to the processing space, the substrate processing method including controlling the first heater and the chiller to different set temperatures.

11. The substrate processing method according to claim 10, wherein the substrate processing apparatus further comprises a gas supply unit that supplies an etching gas to the processing space, and the substrate processing method includes etching a film on the substrate using the etching gas supplied from the gas supply unit.

12. The substrate processing method according to claim 11, wherein the etching process includes a breakthrough process in which a native oxide film on the substrate is etched with the etching gas.

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