Dual backside gas supply system

Abstract

A gas supply system external to a processing chamber includes a first gas line supplying a first gas, a second gas line supplying a second gas, and a valve coupled to the first and second gas lines and to a substrate support in the processing chamber. The valve is configured to supply the first gas to the substrate support for a first time period and to supply the second gas instead of the first gas to the substrate support for a second time period.

Description

DUAL BACKSIDE GAS SUPPLY SYSTEMCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 654,258, filed on May 31 , 2024. The entire disclosure of the application referenced above is incorporated herein by reference.FIELD

[0002] The present disclosure relates generally to substrate processing systems and more particularly to a dual backside gas supply system that switches backside gases between substrate processing and chamber cleaning.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] A substrate processing system typically includes a plurality of processing chambers (also called process modules) to perform deposition, etching, and other treatments of substrates such as semiconductor wafers. Examples of deposition processes that may be performed on a substrate include, but are not limited to, plasma enhanced chemical vapor deposition (PECVD), chemically enhanced plasma vapor deposition (CEPVD), atomic layer deposition (ALD), and plasma enhanced ALD (PEALD). Examples of etching processes that may be performed on a substrate include, but are not limited to, chemical etching, plasma etching, and reactive ion etching processes. Additional examples of the processes that can be performed in processing chambers include cleaning processes used to periodically clean the processing chambers.

[0005] During processing, a substrate is arranged on a substrate support assembly such as a pedestal or an electrostatic chuck (ESC) arranged in a processing chamber of the substrate processing system. A computer-controlled robot typically transfers substrates from one processing chamber to another in a sequence in which thesubstrates are to be processed. During deposition, gas mixtures including one or more precursors are introduced into the processing chamber, and plasma is struck to activate chemical reactions. During etching, gas mixtures including etch gases are introduced into the processing chamber, and plasma is struck to activate chemical reactions. The processing chambers are periodically cleaned by supplying a cleaning gas into the processing chamber and striking plasma.SUMMARY

[0006] A gas supply system external to a processing chamber comprises a first gas line supplying a first gas, a second gas line supplying a second gas, and a valve coupled to the first and second gas lines and to a substrate support in the processing chamber. The valve is configured to supply the first gas to the substrate support for a first time period and to supply the second gas instead of the first gas to the substrate support for a second time period.

[0007] In additional features, the valve is configured to supply the first gas to the substrate support for the first time period during processing of a substrate arranged on the substrate support using a first plasma generated in the processing chamber. The valve is configured to supply the second gas instead of the first gas to the substrate support for the second time period during cleaning of the processing chamber using a second plasma generated in the processing chamber without the substrate arranged on the substrate support.

[0008] In additional features, the valve is configured to supply the first gas to the substrate support for the first time period during processing of a substrate arranged on the substrate support using a plasma generated in the processing chamber. The valve is configured to supply the second gas instead of the first gas to the substrate support for the second time period during the processing of the substrate arranged on the substrate support using the plasma.

[0009] 4 In additional features, the valve is configured to supply only the first gas to the substrate support for the first time period.

[0010] In additional features, the gas supply system further comprises a single conduit fluidly coupling the valve to the substrate support.

[0011] In additional features, the first gas line supplies the first gas that is chemically non-reactive and that has a first thermal conductivity coefficient. The second gas linesupplies the second gas that is chemically non-reactive and that has a second thermal conductivity coefficient that is less than the first thermal conductivity coefficient.

[0012] In additional features, the valve is a three-way valve. The three-way valve comprises an input coupled to the first and second gas lines to receive the first gas for the first time period and to receive the second gas for the second time period. The three-way valve comprises a first output coupled to the substrate support to supply the first gas to the substrate support for the first time period and to supply the second gas to the substrate support for the second time period. The three-way valve comprises a second output connected to an exhaust line to exhaust the first and second gases.

[0013] In additional features, the gas supply system further comprises a first pressure controller coupled to the first gas line and to an input of the valve, and a second pressure controller coupled to the second gas line and to the input of the valve.

[0014] In additional features, the gas supply system further comprises a first filter connected to the first gas line, a first pressure controller connected to the first filter and to an input of the valve, a second filter connected to the second gas line, and a second pressure controller connected to the second filter and to the input of the valve.

[0015] In additional features, the gas supply system further comprises a first valve connected to the first gas line, a first filter connected to the first valve, a pressure controller connected to the first filter and to the valve, a second valve connected to the second gas line, and a second filter connected to the second valve and to the pressure controller.

[0016] In additional features, the gas supply system further comprises a first valve connected to the first gas line, a filter connected to the first valve, a pressure controller connected to the filter and to the valve, and a second valve connected to the second gas line and to the pressure controller.

[0017] In additional features, a substrate processing system comprises the gas supply system, and the substrate support comprises a plurality of holes on a top surface of the substrate support and a conduit coupled to the plurality of holes and to the valve to supply the first gas to the plurality of holes for the first time period and to supply the second gas to the plurality of holes for the second time period.

[0018] In additional features, the substrate processing system further comprises an arrestor connected to the conduit and to the valve. The arrestor comprises a corehaving threads and a shield enclosing the core. The threads and inner walls of the shield form spiral passages through which the first and second gases flow to the conduit. The spiral passages prevent a plasma generated in the processing chamber from flowing from the plurality of holes to the valve.

[0019] In additional features, the valve is configured to supply the first gas that is chemically non-reactive and that has a first thermal conductivity coefficient through the conduit to the plurality of holes for the first time period during processing of a substrate arranged on the substrate support using a first plasma generated in the processing chamber. The valve is configured to supply the second gas instead of the first gas through the conduit to the plurality of holes for the second time period during cleaning of the processing chamber using a second plasma generated in the processing chamber without the substrate arranged on the substrate support. The second gas is chemically non-reactive and having a second thermal conductivity coefficient that is less than the first thermal conductivity coefficient. The valve is configured to exhaust the first and second gases through an exhaust line connected to the valve.

[0020] In additional features, the valve is configured to supply the first gas that is chemically non-reactive and that has a first thermal conductivity coefficient through the conduit to the plurality of holes for the first time period during processing of a substrate arranged on the substrate support using a plasma generated in the processing chamber. The valve is configured to supply the second gas instead of the first gas through the conduit to the plurality of holes for the second time period during the processing of the substrate arranged on the substrate support using the plasma. The second gas is chemically non-reactive and having a second thermal conductivity coefficient that is less than the first thermal conductivity coefficient. The valve is configured to exhaust the first and second gases through an exhaust line connected to the valve.

[0021] In additional features, the substrate support comprises a ceramic plate arranged on a baseplate, a heater disposed in the ceramic plate, and a layer of a polymeric material disposed between the heater and the top surface of the substrate support. The plurality of holes pass through the layer of the polymeric material. Portions of the layer of the polymeric material are in fluid communication with the plurality of holes.

[0022] In still other features, a substrate processing system comprises a processing chamber and a substrate support arranged in the processing chamber. The substrate support comprises a plurality of holes on a top surface of the substrate support and a conduit coupled to the plurality of holes. The substrate processing system comprises a gas supply system arranged external to the processing chamber. The gas supply system comprises a first gas line supplying a first gas, a second gas line supplying a second gas, and a valve coupled to the first and second gas lines and to the conduit. The valve is configured to supply the first gas to the plurality of holes for a first time period and to supply the second gas instead of the first gas to the plurality of holes for a second time period.

[0023] In additional features, the valve is configured to supply the first gas to the plurality of holes for the first time period during processing of a substrate arranged on the substrate support using a first plasma generated in the processing chamber. The valve is configured to supply the second gas instead of the first gas to the plurality of holes for the second time period during cleaning of the processing chamber using a second plasma generated in the processing chamber without the substrate arranged on the substrate support.

[0024] In additional features, the valve is configured to supply the first gas to the plurality of holes for the first time period during processing of a substrate arranged on the substrate support using a plasma generated in the processing chamber. The valve is configured to supply the second gas instead of the first gas to the plurality of holes for the second time period during the processing of the substrate arranged on the substrate support using the plasma.

[0025] In additional features, the first gas line supplies the first gas that is chemically non-reactive and that has a first thermal conductivity coefficient. The second gas line supplies the second gas that is chemically non-reactive and that has a second thermal conductivity coefficient that is less than the first thermal conductivity coefficient.

[0026] In additional features, the valve is a three-way valve. The three-way valve comprises an input coupled to the first and second gas lines to receive the first gas for the first time period and to receive the second gas for the second time period. The three-way valve comprises a first output coupled to the conduit to supply the first gas to the plurality of holes for the first time period and to supply the second gas to theplurality of holes for the second time period. The three-way valve comprises a second output connected to an exhaust line to exhaust the first and second gases.

[0027] In additional features, the gas supply system comprises a first pressure controller coupled to the first gas line and to an input of the valve and a second pressure controller coupled to the second gas line and to the input of the valve.

[0028] In additional features, the gas supply system comprises a first filter connected to the first gas line, a first pressure controller connected to the first filter and to an input of the valve, a second filter connected to the second gas line, and a second pressure controller connected to the second filter and to the input of the valve.

[0029] In additional features, the gas supply system comprises a first valve connected to the first gas line, a first filter connected to the first valve, a pressure controller connected to the first filter and to the valve, a second valve connected to the second gas line, and a second filter connected to the second valve and to the pressure controller.

[0030] In additional features, the gas supply system comprises a first valve connected to the first gas line, a filter connected to the first valve, a pressure controller connected to the filter and to the valve, and a second valve connected to the second gas line and to the pressure controller.

[0031] In still other features, a method of supplying gases to a substrate support in a processing chamber comprises supplying a first gas to a plurality of holes on a top surface of the substrate support for a first time period. The first gas is chemically non- reactive and has a first thermal conductivity coefficient. The method comprises supplying a second gas instead of the first gas to the plurality of holes for a second time period. The second gas is chemically non-reactive and has a second thermal conductivity coefficient that is less than the first thermal conductivity coefficient.

[0032] In additional features, the method further comprises supplying the first gas to the substrate support for the first time period during processing of a substrate arranged on the substrate support using a first plasma generated in the processing chamber. The method further comprises supplying the second gas instead of the first gas to the substrate support for the second time period during cleaning of the processing chamber using a second plasma generated in the processing chamber without the substrate arranged on the substrate support.

[0033] In additional features, the method further comprises supplying the first gas to the substrate support for the first time period during processing of a substrate arranged on the substrate support using a plasma generated in the processing chamber. The method further comprises supplying the second gas instead of the first gas to the substrate support for the second time period during the processing of the substrate arranged on the substrate support using the plasma.

[0034] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0036] FIG. 1 shows an example of a substrate processing system comprising a processing chamber that utilizes a dual backside gas supply system according to the present disclosure;

[0037] FIG. 2 shows an example of a top view of a substrate support arranged in the processing chamber of FIG. 1 showing holes on a top surface of the substrate support for supplying backside gases according to the present disclosure;

[0038] FIG. 3 shows an example of a cross-sectional view of the substrate support of FIG. 2;

[0039] FIG. 4 shows a first example of a dual backside gas supply system according to the present disclosure;

[0040] FIG. 5 shows a second example of a dual backside gas supply system according to the present disclosure;

[0041] FIG. 6 shows a cross-sectional view of an arrestor that is used with a dual backside gas supply system according to the present disclosure;

[0042] FIG. 7 shows a third example of a dual backside gas supply system according to the present disclosure;

[0043] FIG. 8 shows a fourth example of a dual backside gas supply system according to the present disclosure;

[0044] FIG. 9 shows an example of a first method for supplying backside gases to the substrate support of FIG. 1 using any of the dual backside gas supply systems of FIGS. 1 -8; and

[0045] FIG. 10 shows an example of a second method for supplying backside gases to the substrate support of FIG. 1 using any of the dual backside gas supply systems of FIGS. 1 -8.

[0046] In the drawings, reference numbers may be reused to identify similar and / or identical elements.DETAILED DESCRIPTION

[0047] In some processes such as etching processes, an inert gas (e.g., helium) is supplied through holes on a periphery of a top surface of a substrate support. The inert gas is supplied through the holes to a backside of a substrate while the substrate is processed on the substrate support using plasma. The backside of the substrate is the side of the substrate that faces the substrate support. The backside of the substrate is opposite to a front side of the substrate that is processed by the plasma. The gas supplied from the substrate support to the backside of the substrate is called a backside gas. The backside gas has a high thermal conductivity coefficient for transferring heat between the substrate and the substrate support during substrate processing.

[0048] The substrate support (e.g., an electrostatic chuck or ESC) typically comprises a ceramic plate disposed on a metallic baseplate. A heater is disposed in the ceramic plate. A bonding layer (e.g., made of a polymer-based material) is disposed between the heater and a top surface of the ceramic plate. The bonding layer lies between the heater and the top surface of the ceramic plate. The bonding layer bonds the heater to the top surface of the ceramic plate. The bonding layer conducts heat between the heater and the top surface of the ceramic plate. The holes through which the backside gas is supplied are drilled through the top surface of the ceramic plate and through the bonding layer.

[0049] During chamber cleaning, a cleaning plasma is used with no substrate in the processing chamber. For example, the processing chamber may be cleaned using a process called Waferless AutoClean (WAC). Typically, the same backside gas (e.g., helium) that is supplied during substrate processing is also supplied through the holesin the substrate support during chamber cleaning. The backside gas prevents the cleaning plasma from entering into the holes and damaging the bonding layer.

[0050] If the backside gas is not supplied through the holes during the cleaning process, the cleaning plasma can erode the bonding layer. The erosion of the bonding layer can increase the volume of the holes by enlarging the portions of the holes in the bonding layer. The change in volume and the irregular shape of the holes resulting from the erosion of the bonding layer can cause problems in maintaining accurate flow and pressure of the backside gas during subsequent substrate processing.

[0051] The damage to the bonding layer is also irreparable, shortens the life of the substrate support, and ultimately requires replacing the substrate support, which is costly. Additionally, since bonding layer conducts heat between the heater and the top surface of the ceramic plate, the erosion of the bonding layer also worsens temperature control in the areas of erosion. Further, the erosion of the bonding layer can release some of the polymer material from the bonding layer around the holes. The released polymer material can contaminate the processing chamber, which can cause defects in subsequent substrate processing. The backside gas protects the bonding layer and prevents damage to the bonding layer that can be caused by the cleaning plasma.

[0052] However, inert gases such as helium with high thermal conductivity coefficients used as backside gases are expensive resources. During chamber cleaning, since no substrate is present in the processing chamber, a gas such as helium with high thermal conductivity coefficient is not needed to transfer heat between the substrate support and the substrate. Instead, during chamber cleaning, another backside gas that is also chemically nonreactive like helium but that does not have a high thermal conductivity coefficient like helium and is therefore less expensive than helium can be supplied through the holes in the substrate support. Nonlimiting examples of the alternate chemically non-reactive gas with thermal conductivity coefficient (and cost) less than helium include nitrogen and argon.

[0053] Using the alternate chemically non-reactive gas with lower thermal conductivity coefficient than helium during chamber cleaning does not reduce the cleaning quality. Using the alternate chemically non-reactive gas with lower thermal conductivity coefficient than helium also protects the top surface of the substrate support and prevents the cleaning plasma from entering into the holes and damaging the bonding layer like using helium does. Thus, supplying an alternate chemically non-reactive gassuch as nitrogen or argon instead of helium during chamber cleaning can save an expensive source such as helium without sacrificing the cleaning quality while also protecting the substrate support and the holes from the cleaning plasma.

[0054] However, the substrate support comprises only one gas line to supply the backside gas, which limits using another gas during chamber cleaning unless the substrate support is modified to provide another gas line. Further, the backside gas is supplied from a cabinet outside the processing chamber, which has limited space to add components needed to supply another backside gas instead of helium during chamber cleaning in addition to supplying helium during substrate processing.

[0055] The present disclosure provides a system to supply helium during substrate processing and an alternate chemically non-reactive gas instead of helium during chamber cleaning, which saves the expensive source such as helium that is used during substrate processing. The system requires no changes to the design of the substrate support and yet provides the ability to switch between supplying helium during substrate processing and supplying another gas during chamber cleaning. The system adds minimal hardware to modify the existing cabinet to selectively supply helium during substrate processing and another gas during chamber cleaning. The system shares other components (e.g., an air operated valve, an arrestor, and exhaust line, which are described below) that are used to supply helium during substrate processing to alternately supply nitrogen or argon during chamber cleaning. Since the system does not require any changes to the design of the substrate support, the system can be used to replace (retrofit) the existing cabinet that supplies helium during substrate processing to additionally supply another gas instead of helium during chamber cleaning.

[0056] Accordingly, the present disclosure provides a dual backside gas supply system that can switch between helium and another gas without requiring any changes to the design of the substrate support. By eliminating use of helium during chamber cleaning, the dual backside gas supply system reduces cost of ownership of the tool without sacrificing cleaning quality and while ensuring protection of the substrate support during chamber cleaning. Due to the ability to replace (retrofit) the existing cabinet to supply the dual backside gases in parallel as described above, the system also provides a flexible solution.

[0057] The dual backside gas supply system is not limited supplying an alternate gas during chamber cleaning. Instead of supplying an alternate gas during chamber cleaning, the dual backside gas supply system can supply any other gas besides helium during substrate processing if a process requires. For example, the dual backside gas supply system can supply a first backside gas during a first portion of substrate processing and a second backside gas during a second portion of substrate processing. These and other features of the present disclosure are described below in detail.

[0058] The present disclosure is organized as follows. An example of a substrate processing system comprising a dual backside gas supply system of the present disclosure is shown and described with reference to FIG. 1 . Examples of top and cross- sectional views of a substrate support showing holes through which backside gases are supplied are shown and described with reference to FIGS. 2 and 3. An example of a dual backside gas supply system of the present disclosure is shown and described with reference to FIG. 4. Additional components used with the dual backside gas supply system and additional examples of the dual backside gas supply system are shown and described with reference to FIGS. 5-8. Examples of different methods of operating the dual backside gas supply systems are shown and described with reference to FIGS. 9 and 10.EXAMPLE OF SUBSTRATE PROCESSING SYSTEM

[0059] FIG. 1 shows an example of a substrate processing system 10 comprising a processing chamber 28 that utilizes a dual backside gas supply system of the present disclosure. While only one processing chamber is shown for example, the substrate processing system 10 may comprise additional processing chambers. The additional processing chambers may perform other processes (e.g., deposition) on substrates. The dual backside gas supply system can also be used with a processing chamber in which a deposition process is performed. The processing chamber 28 uses inductively coupled plasma to etch substrates. Other processing chambers of the substrate processing system 10 may use other types of plasma (e.g., capacitively coupled plasma, remote plasma, etc.).

[0060] The substrate processing system 10 comprises a coil driving circuit 11 to generate plasma 40 in the processing chamber 28 during substrate processing and chamber cleaning as described below. The coil driving circuit 11 includes a radiofrequency (RF) source 12, a pulsing circuit 14, and a tuning circuit (i.e., matching circuit) 13. The RF source 12 generates an RF signal. The pulsing circuit 14 controls a transformer coupled plasma (TCP) envelope of the RF signal and varies a duty cycle of TCP envelope (e.g., between 1% and 99%) during operation. The pulsing circuit 14 and the RF source 12 can be combined or separate. The tuning circuit 13 may be directly connected to an inductive coil 16. While a single coil is shown, the substrate processing system 10 may comprise a plurality of coils (e.g., inner and outer coils) to generate the plasma 40. The tuning circuit 13 tunes an output of the RF source 12 to a desired frequency and / or a desired phase, and matches an impedance of the inductive coil 16.

[0061] A dielectric window 24 is arranged along a top end of the processing chamber 28. The processing chamber 28 comprises a substrate support (or pedestal) 30 to support a substrate 34. The substrate support 30 comprises an electrostatic chuck (ESC) that electrostatically clamps the substrate 34 to the substrate support 30. Alternatively, the substrate support 30 may use another type of clamping mechanism such as vacuum clamping or mechanical clamping to clamp the substrate 34 to the substrate support 30.

[0062] The substrate support 30 comprises a baseplate 32 and a ceramic plate 33. The baseplate 32 is made of a metallic material (e.g., aluminum or an aluminum alloy). The ceramic plate 33 is arranged on a top surface of the baseplate 32. A thermal resistance layer 36 made of an electrically and thermally insulating material is disposed between the ceramic plate 33 and the baseplate 32. The substrate 34 is arranged on the ceramic plate 33 during processing. The ceramic plate 33 comprises a clamping electrode 37 to clamp the substrate 34 to the ceramic plate 33. One or more heaters 35 are arranged in the ceramic plate 33 to heat the substrate 34 during processing. The heaters 35 are bonded to the ceramic plate 33 using a bonding material as shown and described below with reference to FIG. 3.

[0063] The top surface of the ceramic plate 33 comprises holes (shown at 80 in FIG. 2) along an outer edge or outer diameter (OD) or outer periphery of the ceramic plate 33. A dual backside gas supply system 72 supplies a first backside gas (e.g., helium) through the holes during substrate processing. The dual backside gas supply system 72 supplies a second backside gas (e.g., nitrogen or argon) during chamber cleaning. Examples of the dual backside gas supply system 72, any of which can be used in the substrate processing system 10, are described below in detail with reference to FIGS.3-8. Briefly, the dual backside gas supply system 72 (hereinafter called the dual gas supply system 72) is located external to and adjacent to the processing chamber 28. The dual gas supply system 72 utilizes the same components within the substrate support 30 to supply the first and second gases through the holes 80 in the top surface of the ceramic plate 33. A dry pump 74 is connected to the dual gas supply system 72 to exhaust the first and second gases as described below.

[0064] The baseplate 32 of the substrate support 30 further comprises a cooling system 38 to cool the substrate support 30. The cooling system 38 uses a fluid supplied by a fluid delivery system 39 to cool the substrate support 30. In addition, the fluid delivery system 39 can supply the fluid to manifolds (not shown) arranged on the dielectric window 24 to cool portions of the dielectric window 24.

[0065] A gas delivery system 56 is used to supply various gases to the processing chamber 28. The gas delivery system 56 comprises gas sources 57 to supply the various gases. The gas sources 57 supply process gases, inert gases, and purge gases used to generate the plasma 40 for substrate processing and cleaning gases used to generate the plasma 40 for cleaning the processing chamber 28. The gas delivery system 56 comprises a gas metering system 58 including valves and mass flow controllers (MFCs) to supply the various gases from the gas sources 57 to the processing chamber 28. The gas delivery system 56 comprises a manifold 59 through which the various gases are supplied to the processing chamber 28. A gas injector 63 may be arranged at a center of the dielectric window 24 to inject gases from the manifold 59 into the processing chamber 28. Additionally or alternatively, the gases may be injected from the side of the processing chamber 28.

[0066] The gas delivery system 56 may also supply the backside gases to the dual gas supply system 72. Alternatively, a gas supply system of the fab, which is connected to the substrate processing system 10, and which supplies gases to the gas delivery system 56, may directly supply the backside gases to the dual gas supply system 72.

[0067] During substrate processing, a process gas is supplied to the processing chamber 28. The plasma 40 is generated inside of the processing chamber 28 by supplying RF power from the coil driving circuit 11 to the inductive coil 16. The RF power ignites the process gas to generate the plasma 40. The plasma 40 etches an exposed surface of the substrate 34. An RF source 50, a pulsing circuit 51 , and a bias matching circuit 52 may be used to bias the substrate support 30 during processing tocontrol ion energy. During chamber cleaning, a cleaning gas is supplied to the processing chamber 28. The RF power ignites the cleaning gas to generate the plasma 40. The plasma 40 is generated inside of the processing chamber 28 by supplying RF power from the coil driving circuit 11 to the inductive coil 16. The plasma 40 generated using the cleaning gas (called the cleaning plasma) cleans various components of the processing chamber 28. The backside gases do not generate the plasma 40. Rather, the backside gases prevent damage to the substrate support 30 from the plasma 40.

[0068] A temperature controller 64 is connected to the heaters 35 and controls the heaters 35 to control a temperature of the substrate support 30 and the substrate 34. The substrate support 30 and the dielectric window 24 include temperature sensors 31 , 25 to sense temperatures of substrate support 30 and the dielectric window 24. The temperature controller 64 communicates with the fluid delivery system 39 to control fluid flow through the cooling system 38 to cool the substrate support 30 based on feedback from the temperature sensor 31. The temperature controller 64 also controls fluid flow though the manifold arranged over the dielectric window 24 to cool the dielectric window 24 based on feedback from the temperature sensor 25.

[0069] An exhaust system 65 includes a valve 66 and pump 67 to control pressure in the processing chamber 28 and / or to remove reactants from the processing chamber 28 by purging or evacuation. A controller 70 (also called system controller) controls the etching process and the cleaning process. The controller 70 controls the components of the substrate processing system 10. For example, the controller 70 monitors system parameters and controls delivery of the gases from the gas delivery system 56; striking, maintaining, and extinguishing the plasma 40; supply of the first and second gases from the dual gas supply system 72; removal of reactants from the processing chamber 28; supply of the fluid from the fluid delivery system 39; and so on. Additionally, the controller 70 controls various aspects of the coil driving circuit 11 , the RF source 50, the pulsing circuit 51 , and the bias matching circuit 52, and so on.EXAMPLE OF SUBSTRATE SUPPORT WITH BACKSIDE GAS SUPPLY

[0070] FIG. 2 shows a top view of the substrate support 30 with backside gas supply. The top view shows the holes 80 on the top surface of the ceramic plate 33 that supply the backside gases as described below in detail. The holes 80 are arranged along a circle on the top surface of the ceramic plate 33. The holes 80 are arranged proximate to the outer edge or the OD of the ceramic plate 33. The diameter of the circle is lessthan the OD of the ceramic plate 33. The diameter of the circle is also less than the OD of the substrate 34. Accordingly, when the substrate 34 is placed on the ceramic plate 33, the holes 80 lie under the substrate 34.

[0071] While processing the substrate 34 using the plasma 40, the first backside gas supplied through the holes 80 flows along the backside of the substrate 34. The first backside gas (e.g., helium) has a high thermal conductivity coefficient and transfers heat between the substrate 34 and the substrate support 30 during substrate processing. While cleaning the processing chamber 28 using the cleaning plasma 40, the second backside gas (e.g., nitrogen or argon) is supplied through the holes 80. The second backside gas protects the substrate support 30 and the holes 80 from the cleaning plasma. As described above, the second backside gas is chemically non- reactive like the first backside gas but has a lower thermal conductivity coefficient (and cost) than the first backside gas. In some examples, as described below, the first and second backside gases may be alternately supplied during different portions of the process being performed on the substrate 34.

[0072] FIG. 3 shows a cross-sectional view of the substrate support 30 showing the components of the substrate support 30 through which the backside gases are supplied. The clamping electrode 37 is omitted for illustrating the components of the substrate support 30 through which the backside gases are supplied. The one or more heaters 35 are disposed adjacent to and under the top surface of the ceramic plate 33. The heaters 35 are bonded to the ceramic plate 33 adjacent to the top surface of the ceramic plate 33 by a bonding layer 82. For example, the bonding layer 82 comprises a polymer-based material. The bonding layer 82 is disposed between the heaters 35 and the top surface of the ceramic plate 33. The bonding layer 82 bonds the heaters 35 to the top surface of the ceramic plate 33. The bonding layer 82 conducts heat between the heaters 35 and the top surface of the ceramic plate 33.

[0073] The holes 80, through which the first and second backside gases are supplied, are drilled through the top surface of the ceramic plate 33, the bonding layer 82, and the heaters 35. A conduit 84 extends longitudinally along an axis of the substrate support 30 through the baseplate 32 into the ceramic plate 33. A first plurality of conduits 86-1 , 86-2 (collectively the first conduits 86 or simply the conduits 86) extend radially outwards from the conduit 84 within the ceramic plate 33. A second plurality of conduits 88-1 , 88-2 (collectively the second conduits 88 or simply the conduits 88)extend from the conduits 86 longitudinally towards the top surface of the ceramic plate 33. The conduits 86 and 88 define a plenum (86, 88) in the ceramic plate 33 in the substrate support 30. The plenum (86, 88) is in fluid communication with the conduit 84 and with the holes 80 on the top surface of the ceramic plate 33.EXAMPLES OF DUAL BACKSIDE GAS SUPPLY SYSTEMS

[0074] FIG. 4 shows a first example of the dual gas supply system 72. The dual gas supply system 72 is connected to the controller 70, the dry pump 74, and the substrate support 30 via an arrestor 90, which is described below in detail with reference to FIG. 6. The dual gas supply system 72 is connected to the plenum (86, 88) in the ceramic plate 33 of the substrate support 30 via the arrestor 90. The backside gases supplied by the dual gas supply system 72 flow through the arrestor 90, the plenum (86, 88), and the holes 80. The arrestor 90 allows the backside gases from the dual gas supply system 72 to flow through the plenum 84 and through the holes 80. During substrate processing and chamber cleaning, the arrestor 90 prevents (arrests) the plasma 40 in the processing chamber 28 from entering through the holes 80 into the plenum 84.

[0075] The dual gas supply system 72 is disposed in a cabinet (an enclosure) arranged external to and adjacent to the processing chamber 28. In FIGS. 1 -8, the box identified by number 72 denotes the cabinet enclosing the dual gas supply system 72. The dual gas supply system 72 receives the first backside gas (Gas1 such as helium) through a first gas line 73 and receives the second backside gas (Gas2 such as nitrogen or argon) through a second gas line 75. The dual gas supply system 72 comprises two parallel flow paths called first and second flow paths. The first backside gas (Gas1 such as helium) is supplied through the first flow path of the dual gas supply system 72. The second backside gas (Gas2 such as nitrogen or argon) is supplied through the second flow path of the dual gas supply system 72.

[0076] In the first flow path, the dual gas supply system 72 comprises a first filter (Filterl ) 100 and a first pressure controller (PC1 ) 102. In the second flow path, the dual gas supply system 72 comprises a second pressure controller (PC2) 104. The first and second flow paths can be configured in different ways and can comprise different arrangements of components as shown and described below in detail with reference to FIGS. 4-8. The first filter 100 receives the first backside gas (e.g., from a gas supply line or a gas source as described above with reference to FIG. 1 ). The first filter 100 filters impurities from the first backside gas. The first filter 100 supplies the firstbackside gas to the first pressure controller 102. The second pressure controller 104 receives the second backside gas (e.g., from a gas supply line or a gas source as described above with reference to FIG. 1 ). While not shown, the second backside gas may also be filtered using a second filter (Filter2) shown at 103 in FIG. 5.

[0077] Each of the first and second pressure controllers (PC1 and PC2) 102, 104 is an integrated compact device fitted in the cabinet (shown at 72). Each of the first and second pressure controllers (PC1 and PC2) 102, 104 comprises a solenoid proportional valve, a flow meter, and the control electronics (all not shown). The controller 70 controls these components of each of the first and second pressure controllers (PC1 and PC2) 102, 104. The first pressure controller 102 controls the flow of the first backside gas at a pressure set by the controller 70. The second pressure controller 104 controls the flow of the second backside gas at a pressure set by the controller 70.

[0078] The dual gas supply system 72 further comprises a 3-way valve (called the valve) 110. The first, second, and third ports of the valve 110 are identified at 1 , 2, and 3, respectively. The outputs the first and second pressure controllers 102, 104 are connected to the first port of the valve 110. The second port of the valve 110 is connected to the substrate support 30 via the arrestor 90. The second port of the valve 110 is connected to the plenum (86, 88) and the holes 80 in the substrate support 30 via the arrestor 90. The third port of the valve 110 is connected to the dry pump 74 via a divert path or an exhaust line 112. The exhaust line 112 is connected to the third port of the valve 110 and to the dry pump 74.

[0079] The 3-way valve 110 can be normally closed, normally open, and can provide a function where the gas can be diverted through the third port to move the valve into normally closed or normally open position. Accordingly, the valve 110 has three states: State 1 , called an off state, in which the backside gas is not supplied to the substrate support 30 or to the exhaust line 112. State 2, called a supply state, in which the backside gas is supplied to the substrate support 30. State 3, called an exhaust state, in which the backside gas is diverted to the exhaust line 112.

[0080] For example, the valve 110 may be an air operated valve (AOV), which is also called a pneumatic valve. The AOV uses air pressure to perform a function like a solenoid. As air pressure increases, the air pushes against a piston or diaphragm walls of the AOV, which causes the AOV to actuate. Whether the AOV opens or closes upon actuation depends on the application. The AOV performs two functions. First, the AOVactivates a part of a system when a predetermined pressure is reached. Second, the AOV prevents damage to the system by maintaining a constant pressure or flow rate in the system, or by releasing pressure when the pressure reaches exceeds a predetermined level. The controller 70 controls the states of the valve 110.

[0081] In use, when the substrate 34 is being processed in the processing chamber 28, the controller 70 selects (activates) the first filter 100 and the first pressure controller 102 during substrate processing. The controller 70 does not select (deactivates) the second pressure controller 104 during substrate processing. Accordingly, during substrate processing, the first backside gas is supplied via the first filter 100 and the first pressure controller 102 to the first port of the valve 110 and to the holes 80. The second pressure controller 104 does not supply the second backside gas to the first port of the valve 110 and to the holes 80 during substrate processing. Thus, the controller 70 controls the valve 110 such that first backside gas is supplied through the second port of the valve 110 and through the arrestor 90 to the holes 80 during substrate processing. The first backside gas is exhausted through the third port of the valve 110 and through the exhaust line 112.

[0082] During chamber cleaning (i.e., when the substrate 34 is not present in the processing chamber 28 and the cleaning plasma 40 is used to clean the processing chamber), the first backside gas is not supplied via the first filter 100 and the first pressure controller 102 to the first port of the valve 110. Instead, the second pressure controller 104 supplies the second backside gas to the first port of the valve 110. The controller 70 controls the valve 110 such that second backside gas is supplied through the second port of the valve 110 and through the arrestor 90 to the holes 80 during chamber cleaning. The second backside gas is exhausted through the third port of the valve 110 and through the exhaust line 112.

[0083] FIG. 5 shows a second example of the dual gas supply system, which is shown at 72-1 . The dual gas supply system 72-1 is the same as the dual gas supply system 72-1 with the addition of the second filter (Filter2) 103 in the second flow path. In the dual gas supply system 72-1 , the first flow path is identical to the first flow path of the dual gas supply system 72 and is therefore not described again for brevity.

[0084] In the second flow path, the dual gas supply system 72-1 comprises the second pressure controller (PC2) 104 and the second filter (Filter2) 103. The second filter 103 receives the second backside gas (e.g., from a gas supply line or a gas source asdescribed above with reference to FIG. 1 ). The second filter 103 filters impurities from the second backside gas. The second filter 103 supplies the second backside gas to the second pressure controller 104. The second pressure controller 104 supplies the second backside gas to the first port of the valve 110 and to the holes 80 during chamber cleaning as described above with reference to the dual gas supply system 72.

[0085] In use, the dual gas supply system 72-1 operates in the same way as the dual gas supply system 72 to supply the first backside gas to the holes 80 during substrate processing and to supply the second backside gas to the holes during chamber cleaning. Therefore, the operation of the dual gas supply system 72-1 is not described again for brevity.

[0086] FIG. 6 shows a cross-sectional view of the arrestor 90. The arrestor 90 comprises an inner core 92 and an outer shield 94. The inner core 92 is made of an insulating material (e.g., Teflon). The outer shield 94 is made of a material having properties including high thermal stability, high mechanical strength, high chemical resistance, and having dielectric properties. For example, the outer shield 94 can be made of polyimide. The inner core 92 has a shape of a screw or a threaded bolt having threads 96. The inner core 92 is solid and does not include any holes. When the inner core 92 is inserted into the outer shield 94, the threads 96 of the inner core 92 form spiral tunnels or passages 98 between the inner core 92 and inner walls of the outer shield 94. The backside gas from the valve 110 flows through the spiral passages 98 towards the plenum (84, 86). Additionally, the spiral passages 98 also prevent the plasma 40 from passing through to the valve 110 during substrate processing and chamber cleaning.

[0087] Accordingly, the mechanical design of the spiral passages 98 achieves both functions of flowing the backside gas in a first direction from the valve 110 to the substrate support 30 and preventing flow of plasma in an opposite second direction from the holes 80 to the valve 110. Advantageously, the mechanical design of the arrestor 90 remains the same (unchanged) regardless of the backside gases used during substrate processing and chamber cleaning (e.g., helium, nitrogen, or argon). Thus, the mechanical design of the arrestor 90 allows using different backside gases during substrate processing and chamber cleaning.

[0088] FIGS. 7 and 8 show third and fourth examples of the dual gas supply system, which are shown at 72-2 and 72-3, respectively. The dual gas supply systems 72-2 and72-3 are similar to the dual gas supply system 72 except that the dual gas supply systems 72-2 and 72-3 use a single pressure controller (PC1 ) 102 to alternately supply two different backside gases during substrate processing and chamber cleaning. The dual gas supply system 72-3 also uses a single filter to filter both backside gases.

[0089] In FIG. 7, the dual gas supply system 72-2 also comprises the two flow paths to supply the two backside gases, respectively. The first flow path comprises the first filter 100, the first pressure controller 102, and the valve 110 as shown and described above with reference to FIG. 4. In addition, the first flow path comprises a first valve (V1 ) 120. The first valve 120 is connected to the first filter 100. The first valve 120 receives the first backside gas. The first valve 120 is controlled by the controller 70.

[0090] The second flow path of the dual gas supply system 72-2 is different than the second flow path of the dual gas supply system 72 shown in FIG. 4. The second flow path of the dual gas supply system 72-2 comprises a second valve (V2) 122 and the second filter 103. The second valve 122 is connected to the second filter 103. The output of the second filter 103 is connected to the input of the first pressure controller 102. In some examples, the second filter 103 may be optional and can be omitted. When the second filter 103 is omitted, the output of the second valve 122 is connected directly to the input of the first pressure controller 102. The second valve 122 receives the second backside gas. The second valve 122 is also controlled by the controller 70.

[0091] During substrate processing, the controller 70 closes (deactivates) the second valve 122. The controller 70 opens (activates) the first valve 120. The first valve 120 supplies the first backside gas to the first filter 100. The rest of the flow of the first backside gas is already described above with reference to FIG. 4 and is therefore not described again for brevity.

[0092] During chamber cleaning, the controller 70 closes (deactivates) the first valve 120. The controller 70 opens (activates) the second valve 122. The second valve 122 supplies the second backside gas through the second filter 103 or directly to the first pressure controller 102 when the second filter 103 is omitted. The first pressure controller 102 supplies the second backside gas to the arrestor 90 (and to the holes 80) and to the exhaust line 112 during chamber cleaning in the same manner as the first pressure controller 102 supplies the first backside gas to the arrestor 90 and to the exhaust line 112 during substrate processing.

[0093] In FIG. 8, the dual gas supply system 72-3 also comprises the two flow paths to supply the two backside gases, respectively. The first flow path of the dual gas supply system 72-3 is identical to the first flow path of the dual gas supply system 72-2 and is therefore not described again for brevity. The second flow path of the dual gas supply system 72-3 is different than the second flow path of the dual gas supply system 72-2. The second flow path of the dual gas supply system 72-3 comprises only the second valve (V2) 122. The second flow path of the dual gas supply system 72-3 does not comprise the second pressure controller 104 and the second filter 103. The output of the second valve 122 is connected to the input of the first filter 100 in the first flow path. The second valve 122 receives the second backside gas. The second valve 122 is controlled by the controller 70.

[0094] During substrate processing, the controller 70 closes (deactivates) the second valve 122. The controller 70 opens (activates) the first valve 120. The first valve 120 supplies the first backside gas to the first filter 100. The rest of the flow of the first backside gas is already described above with reference to FIG. 4 and is therefore not described again for brevity.

[0095] During chamber cleaning, the controller 70 closes (deactivates) the first valve 120. The controller 70 opens (activates) the second valve 122. The second valve 122 supplies the second backside gas to the first filter 100. The first pressure controller 102 supplies the second backside gas to the arrestor 90 (and to the holes 80) and to the exhaust line 112 during chamber cleaning in the same manner as the first pressure controller 102 supplies the first backside gas to the arrestor 90 and to the exhaust line 112 during substrate processing.

[0096] The dual gas supply systems shown and described above are described as switching between the first and second backside gases in the context of substrate processing and chamber cleaning. However, the dual gas supply systems shown and described above can also switch the first and second gases during substrate processing depending on requirements of a process being performed on the substrate 34 in the processing chamber as described below with reference to FIG. 10.

[0097] FIG. 9 shows an example of a method 200 for supplying two different backside gases to the substrate support 30 during substrate processing and during chamber cleaning according to the present disclosure. For example, the controller 70 performs the method 200 using any of the dual gas supply systems shown and described above.The controller 70 can perform the method 200 by controlling and operating the valve 110; the pressure controller(s) 102, 104; the filter(s) 100, 103; and the valve(s) 120, 122 of the dual gas supply systems as described above.

[0098] At 202, the controller 70 determines if the substrate 34 is being processed using the plasma 40 in the processing chamber 28. If the substrate 34 is being processed using the plasma 40 in the processing chamber 28, at 204, the controller 70 supplies the first backside gas (Gas1 such as helium) through the holes 80 on the top surface of the substrate support 30 to the back side of the substrate 34 during the substrate processing. The controller 70 does not supply the second backside gas (Gas2 such as nitrogen or argon) through the holes 80 on the top surface of the substrate support 30 during the substrate processing.

[0099] Subsequently (i.e., after the substrate processing is complete and the substrate 34 is removed from the processing chamber 28), or if the substrate 34 is not being processed in the processing chamber 28 at 202, at 206, the controller 70 determines if the processing chamber 28 is to be cleaned. If the processing chamber 28 is to be cleaned, at 208, the controller 70 turns off the supply of Gas1 (if turned on at 204), and supplies the second backside gas (Gas2 such as nitrogen or argon) through the holes 80 on the top surface of the substrate support 30 during the cleaning of the processing chamber 28 using the cleaning plasma 40.

[0100] At 210, the controller 70 determines if the chamber cleaning is complete. If the chamber cleaning is not complete, at 212, the controller 70 continues to supply Gas2 through the holes 80 on the top surface of the substrate support 30 during the chamber cleaning, and the method 200 returns to 210. If the chamber cleaning is complete, at 214, the controller 70 stops supplying Gas2 through the holes 80 on the top surface of the substrate support 30, and the method 200 ends.

[0101] FIG. 10 shows an example of a method 250 for supplying two different backside gases to the substrate support 30 during substrate processing according to the present disclosure. At 252, the controller 70 begins a process for processing the substrate 34 using the plasma 40 in the processing chamber 28. At 254, the controller 70 supplies the first backside gas (Gas1 such as helium) through the holes 80 on the top surface of the substrate support 30 to the back side of the substrate 34 during the substrate processing. For example, the controller 70 supplies Gas1 for a first portion of the process (e.g., during a first predetermined period of the process). The controller 70does not supply the second backside gas (Gas2 such as nitrogen or argon) during the first portion of the process (e.g., during the first predetermined period of the process).

[0102] At 256, after the first portion of the process is complete (i.e., after the first predetermined period of the process), the controller 70 stops supplying Gas1 and supplies the second backside gas (Gas2 such as nitrogen or argon) through the holes 80 on the top surface of the substrate support 30 to the back side of the substrate 34 during the substrate processing. For example, the controller 70 supplies Gas2 for a second portion of the process (e.g., during a second predetermined period of the process). The method 250 ends.

[0103] In some examples, in the method 250, the controller 70 can cyclically repeat the supply of Gas1 and Gas2 during the substrate processing (i.e., while the process is performed to process the substrate 34 using the plasma 40 in the processing chamber 28). For example, the controller 70 can supply Gas1 and not supply Gas2 during a first portion of the process (e.g., during a first predetermined period of the process), supply Gas2 and not supply Gas 1 during a second portion of the process (e.g., during a second predetermined period of the process), supply Gas1 and not supply Gas 2 during a third portion of the process (e.g., during a third predetermined period of the process), and supply Gas2 and not supply Gas 1 during a fourth portion of the process (e.g., during a fourth predetermined period of the process). Accordingly, the controller 70 can supply Gas1 and Gas2 in an alternating manner N times while the process is performed on the substrate 34 using the plasma 40 in the processing chamber 28, where N is a positive integer.

[0104] The foregoing description is merely illustrative in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims.

[0105] It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the examples is described above as having certain features, any one or more of those features described with respect to any one of the examples of the disclosure can be implemented in and / or combined with features ofany of the other examples, even if that combination is not explicitly described. In other words, the described examples are not mutually exclusive, and permutations of one or more examples with one another remain within the scope of this disclosure.

[0106] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0107] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and / or specific processing components (a substrate support, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate.

[0108] The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0109] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, non-transitory memory, and / or software that receiveinstructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software).

[0110] Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some examples, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0111] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process.

[0112] In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control.

[0113] Thus, as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. Anexample of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0114] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0115] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

CLAIMSWhat is claimed is:1 . A gas supply system external to a processing chamber, comprising: a first gas line supplying a first gas; a second gas line supplying a second gas; and a valve coupled to the first and second gas lines and to a substrate support in the processing chamber, the valve configured to supply the first gas to the substrate support for a first time period and to supply the second gas instead of the first gas to the substrate support for a second time period.

2. The gas supply system of claim 1 wherein the valve is configured to: supply the first gas to the substrate support for the first time period during processing of a substrate arranged on the substrate support using a first plasma generated in the processing chamber; and supply the second gas instead of the first gas to the substrate support for the second time period during cleaning of the processing chamber using a second plasma generated in the processing chamber without the substrate arranged on the substrate support.

3. The gas supply system of claim 1 wherein the valve is configured to: supply the first gas to the substrate support for the first time period during processing of a substrate arranged on the substrate support using a plasma generated in the processing chamber; and supply the second gas instead of the first gas to the substrate support for the second time period during the processing of the substrate arranged on the substrate support using the plasma.

4. The gas supply system of claim 1 wherein the valve is configured to supply only the first gas to the substrate support for the first time period.

5. The gas supply system of claim 1 further comprising a single conduit fluidly coupling the valve to the substrate support.

6. The gas supply system of claim 1 wherein: the first gas line supplies the first gas that is chemically non-reactive and that has a first thermal conductivity coefficient; and the second gas line supplies the second gas that is chemically non-reactive and that has a second thermal conductivity coefficient that is less than the first thermal conductivity coefficient.

7. The gas supply system of claim 1 wherein the valve is a three-way valve comprising: an input coupled to the first and second gas lines to receive the first gas for the first time period and to receive the second gas for the second time period; a first output coupled to the substrate support to supply the first gas to the substrate support for the first time period and to supply the second gas to the substrate support for the second time period; and a second output connected to an exhaust line to exhaust the first and second gases.

8. The gas supply system of claim 1 further comprising: a first pressure controller coupled to the first gas line and to an input of the valve; and a second pressure controller coupled to the second gas line and to the input of the valve.

9. The gas supply system of claim 1 further comprising: a first filter connected to the first gas line; a first pressure controller connected to the first filter and to an input of the valve; a second filter connected to the second gas line; and a second pressure controller connected to the second filter and to the input of the valve.

10. The gas supply system of claim 1 further comprising: a first valve connected to the first gas line; a first filter connected to the first valve; a pressure controller connected to the first filter and to the valve; a second valve connected to the second gas line; and a second filter connected to the second valve and to the pressure controller.11 . The gas supply system of claim 1 further comprising: a first valve connected to the first gas line; a filter connected to the first valve; a pressure controller connected to the filter and to the valve; and a second valve connected to the second gas line and to the pressure controller.

12. A substrate processing system comprising: the gas supply system of claim 1 ; and the substrate support comprising: a plurality of holes on a top surface of the substrate support; and a conduit coupled to the plurality of holes and to the valve to supply the first gas to the plurality of holes for the first time period and to supply the second gas to the plurality of holes for the second time period.

13. The substrate processing system of claim 12 further comprising an arrestor connected to the conduit and to the valve, the arrestor comprising: a core having threads; and a shield enclosing the core, wherein the threads and inner walls of the shield form spiral passages through which the first and second gases flow to the conduit; and wherein the spiral passages prevent a plasma generated in the processing chamber from flowing from the plurality of holes to the valve.

14. The substrate processing system of claim 12 wherein the valve is configured to: supply the first gas that is chemically non-reactive and that has a first thermal conductivity coefficient through the conduit to the plurality of holes for the first time period during processing of a substrate arranged on the substrate support using a first plasma generated in the processing chamber;supply the second gas instead of the first gas through the conduit to the plurality of holes for the second time period during cleaning of the processing chamber using a second plasma generated in the processing chamber without the substrate arranged on the substrate support, the second gas being chemically non-reactive and having a second thermal conductivity coefficient that is less than the first thermal conductivity coefficient; and exhaust the first and second gases through an exhaust line connected to the valve.

15. The substrate processing system of claim 12 wherein the valve is configured to: supply the first gas that is chemically non-reactive and that has a first thermal conductivity coefficient through the conduit to the plurality of holes for the first time period during processing of a substrate arranged on the substrate support using a plasma generated in the processing chamber; supply the second gas instead of the first gas through the conduit to the plurality of holes for the second time period during the processing of the substrate arranged on the substrate support using the plasma, the second gas being chemically non-reactive and having a second thermal conductivity coefficient that is less than the first thermal conductivity coefficient; and exhaust the first and second gases through an exhaust line connected to the valve.

16. The substrate processing system of claim 12 wherein the substrate support comprises: a ceramic plate arranged on a baseplate; a heater disposed in the ceramic plate; and a layer of a polymeric material disposed between the heater and the top surface of the substrate support; wherein the plurality of holes pass through the layer of the polymeric material; and wherein portions of the layer of the polymeric material are in fluid communication with the plurality of holes.

17. A substrate processing system comprising: a processing chamber; a substrate support arranged in the processing chamber, the substrate support comprising: a plurality of holes on a top surface of the substrate support; and a conduit coupled to the plurality of holes; and a gas supply system arranged external to the processing chamber, the gas supply system comprising: a first gas line supplying a first gas; a second gas line supplying a second gas; and a valve coupled to the first and second gas lines and to the conduit, the valve configured to supply the first gas to the plurality of holes for a first time period and to supply the second gas instead of the first gas to the plurality of holes for a second time period.

18. The substrate processing system of claim 17 wherein the valve is configured to: supply the first gas to the plurality of holes for the first time period during processing of a substrate arranged on the substrate support using a first plasma generated in the processing chamber; and supply the second gas instead of the first gas to the plurality of holes for the second time period during cleaning of the processing chamber using a second plasma generated in the processing chamber without the substrate arranged on the substrate support.

19. The substrate processing system of claim 17 wherein the valve is configured to: supply the first gas to the plurality of holes for the first time period during processing of a substrate arranged on the substrate support using a plasma generated in the processing chamber; and supply the second gas instead of the first gas to the plurality of holes for the second time period during the processing of the substrate arranged on the substrate support using the plasma.

20. The substrate processing system of claim 17 wherein: the first gas line supplies the first gas that is chemically non-reactive and that has a first thermal conductivity coefficient; and the second gas line supplies the second gas that is chemically non-reactive and that has a second thermal conductivity coefficient that is less than the first thermal conductivity coefficient.

21. The substrate processing system of claim 17 wherein the valve is a three-way valve comprising: an input coupled to the first and second gas lines to receive the first gas for the first time period and to receive the second gas for the second time period; a first output coupled to the conduit to supply the first gas to the plurality of holes for the first time period and to supply the second gas to the plurality of holes for the second time period; and a second output connected to an exhaust line to exhaust the first and second gases.

22. The substrate processing system of claim 17 wherein the gas supply system comprises: a first pressure controller coupled to the first gas line and to an input of the valve; and a second pressure controller coupled to the second gas line and to the input of the valve.

23. The substrate processing system of claim 17 wherein the gas supply system comprises: a first filter connected to the first gas line; a first pressure controller connected to the first filter and to an input of the valve; a second filter connected to the second gas line; and a second pressure controller connected to the second filter and to the input of the valve.

24. The substrate processing system of claim 17 wherein the gas supply system comprises: a first valve connected to the first gas line; a first filter connected to the first valve; a pressure controller connected to the first filter and to the valve; a second valve connected to the second gas line; and a second filter connected to the second valve and to the pressure controller.

25. The substrate processing system of claim 17 wherein the gas supply system comprises: a first valve connected to the first gas line; a filter connected to the first valve; a pressure controller connected to the filter and to the valve; and a second valve connected to the second gas line and to the pressure controller.

26. A method of supplying gases to a substrate support in a processing chamber, comprising: supplying a first gas to a plurality of holes on a top surface of the substrate support for a first time period, the first gas being chemically non-reactive and having a first thermal conductivity coefficient; and supplying a second gas instead of the first gas to the plurality of holes for a second time period, the second gas being chemically non-reactive and having a second thermal conductivity coefficient that is less than the first thermal conductivity coefficient.

27. The method of claim 26 further comprising: supplying the first gas to the substrate support for the first time period during processing of a substrate arranged on the substrate support using a first plasma generated in the processing chamber; and supplying the second gas instead of the first gas to the substrate support for the second time period during cleaning of the processing chamber using a second plasma generated in the processing chamber without the substrate arranged on the substrate support.

28. The method of claim 26 further comprising: supplying the first gas to the substrate support for the first time period during processing of a substrate arranged on the substrate support using a plasma generated in the processing chamber; and supplying the second gas instead of the first gas to the substrate support for the second time period during the processing of the substrate arranged on the substrate support using the plasma.

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