Radio frequency power device and radio frequency power amplifier comprising same

Abstract

The present invention provides a radio frequency power device and a radio frequency power amplifier comprising same. The radio frequency power device comprises: an emitter surrounded by a base; the base configured to surround the emitter and configured to have an opening to avoid forming of a closed metal pattern; and a collector configured to be on upper and lower sides of the base.

Description

Radio frequency power device and radio frequency power amplifier comprising same

[0001] This application claims priority to Chinese Patent Application No. 202410733013.3, filed on June 6, 2024, the disclosure of which is incorporated herein in its entirety as part of the present application. TECHNICAL FIELD

[0002] The present application relates to the field of wireless communication, and more particularly, to a high-power and high-gain 5G radio frequency power device and a radio frequency power amplifier comprising the same. BACKGROUND

[0003] The 5G NR uplink transmit conducted power, the highest power class commonly applied is PC2, while the 4G LTE uplink transmit conducted power, the highest power class commonly applied is PC3. PC2 is 3dB higher than PC3 power class. Considering the loss between the radio frequency power amplifier and the antenna, including the matching network, filter and duplexer, and multi-port switch components. The maximum transmit power of the radio frequency power amplifier in 4G LTE needs to meet the linear power of 29dBm, and the transmit power of the 5G radio frequency power amplifier needs to meet the linear power of 32dBm for the corresponding 5G NR communication link. Moreover, the current 5G NR terminal usually uses a dual-antenna or multi-antenna design, which actually requires an additional 1dB of maximum transmit power for the 5G radio frequency power amplifier.

[0004] Due to the requirement of large transmit power for 5G NR communication link, the transmit power of 5G radio frequency power amplifier is twice that of 4G radio frequency power amplifier, and the working current is more than twice. Because the linearity required by 5G NR system is higher than that of 4G, the 5G radio frequency power amplifier needs to consume more current to obtain higher linearity index. Therefore, a more suitable high-power and high-gain device is needed to support the 5G radio frequency power amplifier. High power requires a larger power unit to support, and high gain requires a higher and more stable gain amplification coefficient of the device itself.

[0005] Currently, the 5G radio frequency power amplifier used by conventional mobile phones and other terminals is usually prepared by using gallium arsenide (GaAs) heterojunction transistor (HBT) process. In order to meet the requirements of high power and high gain of 5G NR system, compared with 4G LTE system, twice the size of the emitter is needed to form a larger power unit. At the same time, it is also necessary to meet the condition that the direct current gain amplification coefficient (Beta) is larger and more stable under large voltage and large current.

[0006] Table 1 is the requirement of 4G LTE and 5G NR for the performance parameters of radio frequency power amplifier device.

[0007] Table 1

[0008] From the perspective of a terminal such as a mobile phone, in a 5G NR system, ultra-high power consumption directly affects the use time and use experience of the mobile phone. In particular, the performance stability and heating problems in a long-term high-power uplink mode are very important.

[0009] FIG. 1 is a top view showing a radio frequency power device for 5G formed by a gallium arsenide (GaAs) material. Referring to FIG. 1, the power device HBT1 is taken as an example of a two-finger emitter, in which the emitter metal is surrounded by a double-finger base metal, and the two outermost sides are collector metal structures. Those skilled in the art should understand that the above structure can also be used in other CMOS, GeSi, etc. processes.

[0010] Referring to the structure of the 5G gallium arsenide (GaAs) material radio frequency power device of FIG. 1, the two-finger emitter has a better heat dissipation effect than the single-finger emitter. In addition, the double-finger base metal structure can provide a more uniform Vb voltage, and can appropriately reduce the problem of uneven current distribution in the emission area. However, this structure also has obvious problems, especially when used to prepare a 5G radio frequency power amplifier.

[0011] When a radio frequency power device prepared using a GaAs material is used to form a radio frequency power amplifier, especially a 5G radio frequency power amplifier, a higher cutoff frequency is required to produce higher gain. Therefore, the thickness of the base region structure grown by epitaxy usually needs to be very thin in order to reduce the transit time of the carriers in the base region and produce a higher cutoff frequency. However, a thin base region will bring a larger base region resistance. Due to the difference in physical position in the base region and the emission region (for example, at the edge of the emission region or inside the emission region), these parasitic base region resistances will cause a gradient potential difference in the emission region. FIG. 2 is a cross-sectional view of the radio frequency power device along the cross-sectional tangent Y1 in FIG. 1. Referring to FIG. 2, a cross-sectional analysis is made in the Y1 direction of the HBT device. The emission region is a heavily doped n-type structure, and the base region is a p-type doped structure. Mark C represents the edge of the emission region, and mark O represents the center position of the emission region. When the voltage applied to the emission junction exceeds the turn-on voltage, the electrons injected into the emitter and the voltage of the emission junction are in an exponential relationship. Due to the internal lateral parasitic resistance of the thin base region, the base region voltage drop gradually decreases from the edge of the emission region to the inside. In this way, more injected electron current is concentrated at the edge of the emission region rather than inside the emission region.

[0012] Referring to FIG. 2, the solid line, the dashed line, and the dotted line represent the gradient change of the emission region current from the edge to the center, with the solid line representing a large current, the dashed line to the dotted line representing a gradually weakened current. In particular, in a 5G high-power operating mode, the large current at the edge of the emitter will cause a local thermal effect, and in severe cases, it will cause the transistor performance to degrade.

[0013] In addition, as the length of the emitter increases, there is a certain potential difference in the thin base metal around the periphery. FIG. 3 is a cross-sectional view of the radio frequency power device along the cross-sectional tangent X1 in FIG. 1. Referring to FIG. 3, the X1 direction of the HBT device is analyzed in cross section. Due to the limitations of the lithography process, the base metal cannot form a sealed pattern, that is, there is a certain edge of the emitter without base metal. Referring to the mark A and the mark B in FIG. 3, as the emitter is lengthened, the base metal around A is closer to the electrode Vb, and the emitter junction at A is turned on earlier than other positions (position B). In this way, the emitter current formed at A is greater than the emitter current formed at B. In the most serious case, referring to position Br in FIG. 3 (position Br is outside position B). There is no base metal at this position, so the emitter current formed from Br to B is very weak. The above structure can cause uneven distribution of the emitter current, that is, the current at A is large, and the current at B is small. The unilateral large current thermal effect of the emitter region also causes degradation of the transistor performance. SUMMARY

[0014] An aspect of the present application provides a radio frequency power device and a power amplifier formed using the power device, which can be applied to 5G, to solve the problem of high transmission power in 5G mode. The power amplifier device according to an embodiment of the present application can effectively solve the problem of lateral edge concentration of the emitter current, and can also solve the problem of unilateral concentration of the emitter current.

[0015] An aspect of the present application provides a radio frequency power device, including: an emitter surrounded by a base; a base configured to surround the emitter, and the base is configured to have an opening to avoid forming a closed metal pattern; and a collector configured to be on both sides of the base.

[0016] An aspect of the present application provides a radio frequency power device, wherein the emitter includes N emitters for forming an N-finger emitter, where N is a natural number.

[0017] An aspect of the present application provides a radio frequency power device, wherein the base is configured to have two openings respectively configured above and below the middle of the emitter.

[0018] An aspect of the present application provides a radio frequency power device, wherein the base is configured to have two openings respectively configured above and below the middle of the emitter.

[0019] An aspect of the present application proposes a radio frequency power device, wherein the base is configured to have two openings respectively configured at the upper right of the emitter and the lower middle of the emitter.

[0020] An aspect of the present application proposes a radio frequency power device, wherein the opening has a minimum line width of a process of forming the power device.

[0021] An aspect of the present application proposes a radio frequency power device, wherein the base has a main body region located at one side of the emitter and is configured to be connected to a base voltage, and the main body region is configured to be combined with a main body region of another radio frequency power device to form a back-to-back type radio frequency power device.

[0022] An aspect of the present application proposes a radio frequency power device, wherein the collector is configured to be consistent with the length of the base.

[0023] An aspect of the present application proposes a radio frequency power device, wherein the power device is implemented by one of a GaAs process, a CMOS process, or a SiGe process.

[0024] An aspect of the present application proposes a radio frequency power device, comprising a driving stage amplification unit, a power stage amplification unit, a driving stage bias circuit, a power stage bias circuit and an input matching network, an inter-stage matching network and an output matching network, wherein the power stage amplification unit comprises the radio frequency power device as described above. BRIEF DESCRIPTION OF DRAWINGS

[0025] FIG. 1 is a top view showing a radio frequency power device for 5G formed by a gallium arsenide (GaAs) material;

[0026] FIG. 2 is a sectional view showing the radio frequency power device along a sectional tangent line Y1 in FIG. 1;

[0027] FIG. 3 is a sectional view showing the radio frequency power device along a sectional tangent line X1 in FIG. 1;

[0028] FIG. 4 is a schematic view of a structure of a radio frequency power device according to an embodiment of the present application;

[0029] FIG. 5 is a schematic view showing a radio frequency power amplifier composed of a power device according to an embodiment of the present application;

[0030] FIG. 6 is a schematic view showing a sectional view of a power device according to an embodiment of the present application;

[0031] FIG. 7 is a schematic view showing a sectional view of a power device according to an embodiment of the present application;

[0032] FIG. 8 is a diagram showing current and power output of power amplifiers employing different power device structures at 4G and 5G;

[0033] FIG. 9 is a diagram showing gain and power output of power amplifiers employing different power device structures at 4G and 5G;

[0034] FIG. 10 is a diagram of a structure of a radio frequency power device according to another embodiment of the present application; and

[0035] FIG. 11 is a diagram of a structure of a radio frequency power device according to still another embodiment of the present application. DETAILED DESCRIPTION

[0036] Before undertaking the detailed description below, it can be advantageous to set forth definitions of certain words and phrases used throughout this patent document. The term “couple” and “connect” and variations thereof, mean any direct or indirect communication between two or more elements, whether or not those elements are in physical contact with one another. The terms “transmit,” “receive,” and “communicate,” and variations thereof, encompass both direct and indirect communication. The terms “include,” “comprise,” and “comprising,” and variations thereof, mean “including but not limited to.” The term “or” is inclusive, meaning and / or. The phrase “associated with,” and variations thereof, means includes, is included within, interconnects with, contains, is contained within, connects or is connected with, couples or is coupled with, is in communication with, cooperates or assists with, interlaces, is proximate to, is bound to or with, has, has a property of, has a relationship with, or the like. The term “controller” means any device, system or part thereof that controls at least one operation. Such a controller can be implemented in hardware or a combination of hardware and software and / or firmware. The functionality associated with any particular controller can be centralized or distributed, whether locally or remotely. The phrase “at least one of,” when used with a list of items, means that different combinations of one or more of the listed items can be utilized and that only one member from the list can be needed. For example, “at least one of A, B, and C” includes any of the following combinations: A, B, C, A and B, A and C, B and C, and A and B and C.

[0037] Definitions for other certain words and phrases are provided throughout this patent document. Those of ordinary skill in the art will understand that in many, if not most instances, such definitions apply to prior and future uses of such defined words and phrases.

[0038] In this patent document, the terms “circuit” and “circuitry” are used broadly, to encompass a wide variety of implementations including both analog and digital circuits, combinations thereof, as well as computer software, firmware, or hardware that perform similar functions. In general, “circuitry” encompasses a regular electrical circuit that operates analog and / or digital signals to process data. The term “circuitry” encompasses combinations of circuits and / or circuitry with other positioning and / or measurement components (including hardware, software and / or firmware) that together perform a positioning and / or measurement function. “Circuitry” also encompasses a regular progression of design and fabrication of hardware that includes stages of logical and / or physical design, tape-out, and the like. The term “circuitry” also encompasses regular functional relationships between electrical components, such as the relationship between a processor and an associated memory.

[0039] In the present disclosure, FIGS. 1-11 and the various embodiments used to describe the principles of the present disclosure in the document are merely illustrative and should not be construed as limiting the scope of the present disclosure in any way. Those skilled in the art will appreciate the principles of the present disclosure can be implemented in any suitably arranged system or device.

[0040] The 5G radio frequency power amplifier and the 4G radio frequency power amplifier used by the conventional mobile phone terminal and the like have different standards for the current aggregation in the device, and Table 2 shows the acceptance of the current aggregation problem in the device in the 4G LTE mode and the 5G NR mode.

[0041] Table 2

[0042] The conventional radio frequency power amplifier device has obvious gain deficiency and low power phenomenon in the 5G NR system, and the traditional device structure is still very limited in solving this problem. In view of the above problems, the present application designs a new device structure, which focuses on solving the problems of current lateral edge concentration and unilateral current concentration in the emission area in the 5G large current working mode, so that the distribution of the emission area current on the device structure is uniform, which improves the thermal effect of the device, avoids the performance deterioration of the device caused by large current in the emitter, and also improves the stability of the radio frequency power amplifier device in the 5G large current mode.

[0043] FIG. 4 is a schematic diagram of the structure of a radio frequency power device according to an embodiment of the present application.

[0044] Referring to FIG. 4, the structure of a radio frequency power device with a two-finger emitter structure is shown therein. In FIG. 4, the HBT2 device is a single-ended HBT device structure, and the HBT2D device is an HBT device with a back-to-back structure.

[0045] Referring to FIG. 4, the HBT2 device is a device structure applied to the 5G NR mode, which is a single-ended HBT device structure, including: 1) an emitter, wherein the emitter includes a first emitter and a second emitter, and the emitter is surrounded by a base, wherein two metal openings are configured at the right upper and right lower parts of the emitter to avoid forming a closed metal pattern to avoid affecting the stability of the photolithography process; 2) a base, which is configured to form around the emitter, and the main body area thereof is located on one side (e.g., the leftmost side) of the emitter, and the main body area will be used as the connection point of the base voltage Vb at this position; 3) a collector, which is configured to be on the upper and lower sides of the base, and is configured to be consistent with the length of the base.

[0046] According to an embodiment of the present application, the two metal openings are configured to have a minimum line width of the process of forming the power device.

[0047] Referring to FIG. 4, the HBT2D device is an extended structure of a device structure that can be applied to a 5G NR mode, which is a back-to-back structure HBT device structure, including: a first HBT2 structure unit and a second HBT2 structure unit which are the same as the HBT2 structure. Among them, the first HBT2 structure unit and the second HBT2 structure unit are configured to be back-to-back connected, that is, the body region of the base of the first HBT2 structure unit and the body region of the base of the second HBT2 structure unit are configured to be in contact with each other, so that the body region of the base is configured in the middle, and at this position as the connection point of the base voltage Vb; in addition, the collector of the first HBT2 structure unit and the second HBT2 structure unit are connected to each other.

[0048] FIG. 5 is a schematic diagram of a radio frequency power amplifier composed of power devices according to an embodiment of the present application.

[0049] Referring to FIG. 5, the radio frequency power amplifier includes: a driving stage amplification unit and a power stage amplification unit, a driving stage bias circuit, a power stage bias circuit, and an input matching network, an inter-stage matching network, and an output matching network.

[0050] Among them, the signal is input to the driving stage amplification unit through the input matching network, and then the amplified signal is input to the power stage amplification unit through the inter-stage matching network, and the signal amplified by the power stage amplification unit is output through the input matching network. Among them, the bias voltage is provided to the driving stage amplification unit by the driving stage bias circuit, and the bias voltage is provided to the power stage amplification unit by the power stage bias circuit.

[0051] According to an embodiment of the present application, the power stage amplification unit is composed of back-to-back HBT2D devices. Among them, each back-to-back HBT2D device includes two back-to-back configured HBT2 devices. Through the back-to-back type HBT2D device, the base voltage Vb is applied to the middle region of the device, thereby effectively improving the problem of the radio frequency power amplifier to the lateral edge concentration of the emission region current and the problem of the unilateral aggregation of the emission region current.

[0052] FIG. 6 is a schematic diagram of a cross-sectional view of a power device according to an embodiment of the present application.

[0053] Referring to FIG. 6, FIG. 6 shows a cross-sectional view along the Y2 direction of the HBT2 device in FIG. 4, for explaining the improvement of the radio frequency power amplifier composed of power devices according to an embodiment of the present application to the problem of the lateral edge concentration of the emission region current.

[0054] As can be seen from the following formula 1, without considering the influence of the thermal effect on the current, the collector current I c (x) is proportional to the base voltage Vb.

[0055] where Ico is the collector saturation current, η is the collector current ideality factor, q is the electronic charge, K is the Boltzmann constant, Ta is the thermodynamic temperature, and Vb(x) represents the base voltage at different locations.

[0056] Referring to FIG. 6, with the edge of the emitter as zero point, due to the existence of the base surface parasitic resistance Rsurf and the base bulk parasitic resistance Rbluk, the closer to the inside of the emitter region (the greater the value of x), the lower the base voltage drop. Thus, a gradient difference of the emitter region current is formed. The smaller the value of x, the smaller the gradient difference of the current.

[0057] Suppose that the total emitter region cross-sectional width of the power unit is W, and W is composed of a plurality of single emitter regions with a width of X, as shown in Equation 2. W(sum) = X1+ X2... Equation 2

[0058] As described above, the smaller the value of x, the smaller the Vb voltage drop affected by the base region surface parasitic resistance and the base region bulk parasitic resistance, and the smaller the gradient difference of the emitter region lateral current. Therefore, the total collector current is as shown in Equation 3. I c (sum) = I c (X1) + I c (X2)... Equation 3

[0059] Therefore, reducing the single emitter region width reduces the value of x, and also reduces the gradient difference of the emitter region lateral current. Finally, the power unit of the power amplifier is composed of a plurality of emitters combined together, and in this way, the problem of the emitter region current lateral edge concentration is improved.

[0060] FIG. 7 is a schematic diagram showing a cross-sectional view of a power device according to an embodiment of the present application.

[0061] Referring to FIG. 7, FIG. 7 shows a cross-sectional view along the X2 direction of the HBT2 device in FIG. 4, for explaining the improvement of the problem of the current unilateral concentration in the emitter region current of the radio frequency power amplifier composed of the power device according to an embodiment of the present application.

[0062] As can be seen from the X1 cross-sectional view of FIG. 3, there is no base metal on one side of the HBT1 device (Br region). This side has a significant problem of unilateral concentration of the emitter current. Compared with the HBT1 structure, the HBT2D improves this problem by adding a base (BaseB) to the Br region. Thus, the added base (BaseB) forms the same potential difference with the main base region (BaseA) to form the same emitter current, as shown in FIG. 7. Thus, the unilateral concentration of the emitter current is completely solved by the additional base (additional base metal) in the Br region.

[0063] The radio frequency power amplifier composed of the power device of the embodiment of the present application can improve and solve the problems of the lateral edge concentration of the emitter current and the unilateral concentration of the emitter current. When the radio frequency power amplifier is in a high power mode, such as a 5G NR mode, the current distribution of each transistor of the power unit is more uniform, the transistor performance is stable, and the working current is also a stable value. If the two problems are not solved, the lateral edge concentration of the emitter current and the unilateral concentration of the emitter current will cause the current to be unevenly distributed in each transistor of the power unit, and the performance of the transistor will deteriorate, which requires more current to compensate for the linearity and other indicators, so that the actual working current is much larger. FIG. 8 is a schematic diagram showing the current and power output of the power amplifier using different power device structures under 4G and 5G. Referring to FIG. 8, since the power level of 4G LTE is 3 dB lower than that of 5G NR, the actual working current is lower, and the influence of the two effects is smaller. However, when the radio frequency power amplifier is in a 5G NR working mode, the working current is 2-2.5 times that of the LTE mode. Referring to FIG. 8, compared with the power device using the HBT1 structure, the current of the power device using the HBT2D structure is significantly reduced.

[0064] FIG. 9 is a schematic diagram showing the gain and power output of the power amplifier using different power device structures under 4G and 5G. Referring to FIG. 9, when the radio frequency power amplifier is in a high power mode, such as a 5G NR mode, the current distribution of the power device using the HBT2D structure is more uniform. In this case, the heat generation of a single transistor is the average value. In contrast, in the case of the power device using the HBT1 structure, since the two problems are not solved, the emitter region of the power device has uneven current distribution, and the heat generation of each region is also not the average value. The carrier transport coefficient of the overheated region decreases, which causes the increase of the body carrier recombination and other degradation phenomena, thereby causing a significant reduction in power gain.

[0065] In summary, by using the power device with the HBT2 structure as described in the embodiments of the present application, the problems of current concentration at the lateral edge of the emitter region and one-sided current concentration in the emitter region are solved, so that the HBT2D power device based on the HBT2 structure has obvious performance advantages in the 5G NR mode, as shown in Table 3 below.

[0066] Table 3

[0067] FIG. 10 is a schematic diagram of the structure of a radio frequency power device according to another embodiment of the present application.

[0068] Referring to FIG. 10, the structure of a radio frequency power device with a two-finger emitter structure is shown therein. In FIG. 10, the HBT3 device is a single-ended HBT device structure, and the HBT3D device is an HBT device with a back-to-back structure.

[0069] Referring to FIG. 10, the HBT3 device is a device structure that can be applied in the 5G NR mode, which is a single-ended HBT device structure, including: 1) an emitter, wherein the emitter includes a first emitter and a second emitter, and the emitter is surrounded by a base, wherein two metal openings are configured above and below the middle part of the emitter to avoid forming a closed metal pattern so as not to affect the stability of the photolithography process; 2) a base, which is configured to form around the emitter, and the main body region thereof is located on one side (for example, the leftmost side) of the emitter, and the main body region will be used as a connection point of the base voltage Vb at this position; 3) a collector, which is configured to be on both sides of the base and is configured to be consistent with the length of the base.

[0070] According to an embodiment of the present application, the two metal openings are configured to have a minimum line width of the process of forming the power device.

[0071] Referring to FIG. 10, the HBT3D device is an extended structure of a device structure that can be applied in the 5G NR mode, which is an HBT device with a back-to-back structure, including: a first HBT3 structure unit and a second HBT3 structure unit which are the same as the HBT3 structure. Wherein, the main body region of the base of the first HBT3 structure unit and the main body region of the base of the second HBT3 structure unit are configured to abut together, so that the main body region of the base is configured in the middle, and is used as a connection point of the base voltage Vb at this position; in addition, the collectors of the first HBT3 structure unit and the second HBT3 structure unit are connected to each other.

[0072] FIG. 11 is a schematic diagram of the structure of a radio frequency power device according to another embodiment of the present application.

[0073] Referring to FIG. 11, a structure of a radio frequency power device having a two-finger emitter structure is illustrated therein. In FIG. 11, the HBT4 device is a single-ended HBT device structure, and the HBT4D device is a back-to-back structure of HBT devices.

[0074] Referring to FIG. 11, the HBT4 device is a device structure that can be applied to a 5G NR mode, which is a single-ended HBT device structure, including: 1) an emitter, wherein the emitter includes a first emitter and a second emitter, and the emitter is surrounded by a base, wherein two metal openings are configured at the right upper and lower middle positions of the emitter, avoiding the formation of a closed metal pattern to avoid affecting the stability of the photolithography process; 2) a base, which is configured to form around the emitter, and the main body area thereof is located on one side (e.g., the leftmost side) of the emitter, and will be used as a connection point of the base voltage Vb at this location; 3) a collector, which is configured to be on both sides of the base, and is configured to be consistent with the length of the base.

[0075] According to an embodiment of the present application, the two metal openings are configured to have a minimum line width of the process of forming the power device.

[0076] Referring to FIG. 11, the HBT4D device is an extended structure that can be applied to a 5G NR mode, which is a back-to-back structure of HBT devices, including: a first HBT4 structure unit and a second HBT4 structure unit, which are the same as the HBT4 structure. Wherein, the main body area of the base of the first HBT4 structure unit and the main body area of the base of the second HBT4 structure unit are configured to abut together, so that the main body area of the base is configured in the middle, and is used as a connection point of the base voltage Vb at this location; in addition, the collectors of the first HBT4 structure unit and the second HBT4 structure unit are connected to each other.

[0077] Although in the above examples, a two-finger emitter is taken as an example for illustration, those skilled in the art should understand that the concept of the present application can also be applied to power devices with three-finger or multi-finger emitters.

[0078] Those skilled in the art should understand that the structure of the present application can be applied to various amplifier circuits, for example, a radio frequency power amplifier can include an HBT amplifier unit, a CMOS amplifier unit, a SiGe amplifier unit, a single-ended amplifier, or a differential power amplifier unit.

[0079] While the present disclosure has been described with an exemplary embodiment, various changes and modifications can be suggested to one skilled in the art. It is intended that the present disclosure encompass such changes and modifications as fall within the scope of the appended claims.

[0080] No aspect of any description in this disclosure should be understood as implying that any particular element, step, or function is an essential element that must be included in the scope of the claims. The scope of the inventive subject matter is defined solely by the claims.

Claims

1. A radio frequency power device, comprising: an emitter surrounded by a base; the base is configured to surround the emitter, and the base is configured to have openings to avoid forming a closed metal pattern; and a collector configured to be on both upper and lower sides of the base. The emitter includes N emitters for forming an N-finger emitter, where N is a natural number.

2. The radio frequency power device of claim 1, wherein, The base is configured to have two openings respectively configured at right upper and right lower sides of the emitter.

3. The radio frequency power device of claim 1, wherein, The base is configured to have two openings respectively configured at upper and lower sides of the middle of the emitter.

4. The radio frequency power device of claim 1, wherein, The base is configured to have two openings respectively configured at right upper side of the emitter and lower side of the middle of the emitter.

5. The radio frequency power device of claim 1, wherein, The openings have a minimum line width of a process for forming the power device.

6. A radio frequency power device according to any one of claims 3 to 5, wherein, The base has a main body region located at one side of the emitter and is configured for connecting a base voltage, the main body region is configured for combining with a main body region of another radio frequency power device to form a back-to-back type radio frequency power device.

7. The radio frequency power device of claim 1, wherein, The collector is configured to be consistent with a length of the base.

8. The radio frequency power device of claim 7, wherein, The power device is implemented by one of a GaAs process, a CMOS process, or a SiGe process.

9. The radio frequency power device of claim 1, wherein, 10. A radio frequency power amplifier, comprising: a driver stage amplification unit, a power stage amplification unit, a driver stage biasing circuit, a power stage biasing circuit, and an input matching network, an inter-stage matching network, and an output matching network, wherein the power stage amplification unit includes the radio frequency power device as claimed in any one of claims 1-9. ​

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