Semiconductor device

Abstract

The purpose of the present invention is to provide a semiconductor device capable of handling various interface requests. This semiconductor device is provided with: sealing resins (10a-10c) that seal a semiconductor chip; positive electrode parts (11a-11c) and negative electrode parts (12a-12c) that extend from one side surface of the sealing resins (10a-10c); output parts (13a-13c) that extend from the other side surface facing the one side surface; semiconductor units (1a-1c) having a plurality of control units that are exposed from the sealing resins (10a-10c); first resin members (2a-2c) that are disposed facing the one side surface and that have an insulating first wall disposed between the positive electrode parts (11a-11c) and the negative electrode parts (12a-12c); second resin members (3a-3c) that are disposed facing the other side surface; and third resin members (4a-4c) that hold a plurality of control terminals respectively joined to the control units.

Description

Semiconductor Devices

[0001] The present disclosure relates to a semiconductor device (power semiconductor module).

[0002] Patent Document 1 addresses the problem of performing terminal bonding by soldering at a relatively low cost without forming the frame body from a heat-resistant resin, and discloses, as a solution, a power semiconductor device comprising: a cooler; a wiring pattern arranged on the cooler; switching elements and rectifying elements connected on the wiring pattern; plate-like leads having terminal portions and connection portions and connected to the switching elements and rectifying elements via the connection portions; and a frame body surrounding the wiring pattern, switching elements, and rectifying elements and to which the terminal portions are fixed, the frame body being composed of at least two divided bodies, each of which is inserted between the cooler and the plate-like leads from the side of the wiring pattern.

[0003] Patent Document 2 discloses that even when it is necessary to change the shape of a transfer mold type power module, the electrode terminals of the power module can be separated from the electrodes and the separated electrode terminals can be accurately attached to the electrodes later, thereby making it easy to change the electrode positions of the module.

[0004] Patent Document 3 discloses that a power semiconductor module includes a cooler, a plurality of power semiconductor units arranged and fixed on the cooler, and a bus bar unit that electrically connects the power semiconductor units, and the power semiconductor units include a laminated substrate in which a circuit board, an insulating plate, and a metal plate are stacked in order, a semiconductor element fixed to the circuit board, a wiring member having a printed circuit board and a plurality of conductive posts, external terminals electrically and mechanically connected to the circuit board, and an insulating sealing material, and the bus bar unit includes a plurality of bus bars that mutually connect the external terminals of the power semiconductor units.

[0005] Patent Document 4 discloses a semiconductor device comprising a plurality of semiconductor units, each having a semiconductor element, a unit housing that seals the semiconductor element, and a first unit terminal exposed in a first recess provided on the top surface of the unit housing, first connection terminals that correspond to each of the plurality of semiconductor units and are connected to the first unit terminals, first connection conductors that connect between the plurality of first connection terminals, a first unit connection portion that has a first connection conductor sealing portion that seals the first connection conductor and exposes the plurality of first connection terminals, and a plurality of first recess sealing portions that correspond to each of the plurality of semiconductor units and seal the connection portion between the first unit terminal and the first connection terminal within the recess of the first recess.

[0006] JP 2017-22157 A JP 2024-71 A International Publication No. 2016 / 031462 JP 2018-29141 A

[0007] In power semiconductor modules, it is difficult to meet the diverse interface requirements of customers and the like.

[0008] In view of the above problems, an object of the present disclosure is to provide a semiconductor device that can meet various interface requirements.

[0009] One aspect of the present disclosure is a semiconductor device including: a sealing resin that seals a semiconductor chip; a semiconductor unit having a positive electrode portion and a negative electrode portion extending from one side surface of the sealing resin, an output portion extending from the other side surface opposite the one side surface; and a plurality of control portions exposed from the sealing resin; a first resin member arranged opposite one side surface and having an insulating first wall arranged between the positive electrode portion and the negative electrode portion; a second resin member arranged opposite the other side surface; and a third resin member that holds a plurality of control terminals that are respectively joined to each control portion.

[0010] In one aspect of the present disclosure, the semiconductor device may further include a cooler arranged on the underside of the semiconductor unit, which covers, in a plan view, at least the areas of the upper surface of the cooler facing the positive electrode portion, the negative electrode portion, and the output portion, and may further include an insulating sheet extending to the underside of the outer edge of the semiconductor unit, the underside of the first resin member, and the underside of the second resin member.

[0011] In one aspect of the present disclosure, the third resin member may be disposed on the semiconductor unit and engaged with the first resin member and the second resin member.

[0012] In one aspect of the present disclosure, one end of the control terminal may extend in a lateral direction of the third resin member.

[0013] In one aspect of the present disclosure, one of the positive electrode portion and the negative electrode portion of the semiconductor unit is wider than the other in a direction perpendicular to the extension direction of the positive electrode portion and the negative electrode portion, the width of the output portion of the semiconductor unit in the direction perpendicular to the extension direction of the output portion is the same as the width of one of the positive electrode portion and the negative electrode portion, and the second resin member may have the same shape as the first resin member.

[0014] In one aspect of the present disclosure, the semiconductor unit further includes a positive electrode terminal having a plurality of positive electrode portions, being held by a first resin member, having a fastening hole, and having a plurality of joints connected to the positive electrode portions; and a negative electrode terminal being held by the first resin member, having a fastening hole, and having a joint connected to the negative electrode portion, and the first resin member may have a second wall that separates the positive electrode terminal and the negative electrode terminal.

[0015] In one aspect of the present disclosure, the device may further include an output terminal that is held by the second resin member, has a fastening hole, and is connected to the output portion.

[0016] In one aspect of the present disclosure, the control unit may include a pin protruding from an upper surface of the sealing resin.

[0017] In one aspect of the present disclosure, the control unit may include a pad that is flush with the upper surface of the sealing resin.

[0018] In one aspect of the present disclosure, a plurality of semiconductor units may be arranged on a cooler, and a first resin member corresponding to each semiconductor unit may be integrally formed, and a second resin member corresponding to each semiconductor unit may be integrally formed.

[0019] It should be noted that the above summary of the invention does not list all of the necessary features of the present disclosure, and that subcombinations of these features may also constitute inventions.

[0020] According to the present disclosure, it is possible to provide a semiconductor device that can meet various interface requirements.

[0021] 1 is a perspective view of a semiconductor device according to a first embodiment. FIG. 2 is a top view of the semiconductor device according to the first embodiment. FIG. 3 is a side view of the semiconductor device according to the first embodiment. FIG. 4 is another side view of the semiconductor device according to the first embodiment. FIG. 5 is a perspective view of a semiconductor unit according to the first embodiment. FIG. 6 is a cross-sectional view of the semiconductor unit according to the first embodiment. FIG. 7 is a perspective view of a control terminal portion according to the first embodiment. FIG. 8 is a perspective view of a semiconductor unit and a control terminal portion according to the first embodiment. FIG. 9 is another perspective view of a semiconductor unit and a control terminal according to the first embodiment. FIG. 10 is another perspective view of a semiconductor unit and a control terminal according to the first embodiment. FIG. 11 is a perspective view of a positive and negative terminal case according to the first embodiment. FIG. 12 is a perspective view of an output terminal case according to the first embodiment. FIG. 13 is a side view of a portion of the semiconductor device according to the first embodiment. FIG. 14 is another side view of a portion of the semiconductor device according to the first embodiment. FIG. 15 is an exploded perspective view of a semiconductor device according to the first embodiment. FIG. 16 is a perspective view of a positive and negative terminal case according to a modified example of the first embodiment. FIG. 17 is a perspective view of an output terminal case according to a modified example of the first embodiment. FIG. 18 is a perspective view of a semiconductor device according to a second embodiment. FIG. 19 is a top view of a semiconductor device according to the second embodiment. FIG. 19 is a side view of a semiconductor device according to the second embodiment. FIG. 19 is another side view of a semiconductor device according to the second embodiment. FIG. 19 is another perspective view of a semiconductor device according to the second embodiment. FIG. 19 is a top view of a control terminal portion according to the second embodiment. FIG. 19 is a bottom view of a control terminal portion according to the second embodiment. FIG. 10 is a bottom view of a semiconductor unit, positive and negative terminal portions, and an output terminal portion according to a second embodiment. FIG. 11 is a top view of a positive and negative terminal portion according to a second embodiment. FIG. 12 is a bottom view of a positive and negative terminal portion according to a second embodiment. FIG. 13 is a top view of a positive and negative terminal portion according to a second embodiment. FIG. 14 is a side view of a portion of a semiconductor device according to a second embodiment. FIG. 15 is a cross-sectional view of a portion of a semiconductor device according to a second embodiment. FIG. 16 is a top view of an output terminal portion according to a second embodiment. FIG. 17 is a bottom view of an output terminal portion according to a second embodiment. FIG. 18 is an exploded perspective view of a semiconductor device according to a second embodiment. FIG. 19 is a bottom view of a semiconductor unit, positive and negative terminal portions, and an output terminal portion according to a modified example of the second embodiment.

[0022] Hereinafter, first and second embodiments of the present disclosure will be described with reference to the drawings. In the drawings referred to in the following description, identical or similar parts are designated by identical or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between thickness and planar dimensions, the thickness ratio of each layer, etc., may differ from the actual ones. Therefore, specific thicknesses and dimensions should be determined with reference to the following description. Furthermore, it goes without saying that the drawings may include parts with different dimensional relationships and ratios.

[0023] Furthermore, the definitions of directions such as "up," "down," "up and down," "left," "right," and "left and right" in the following description are merely definitions for the convenience of explanation and do not limit the technical idea of ​​the present disclosure. For example, if an object is rotated 90 degrees and observed, "up and down" is converted and read as "left and right," and of course, if an object is rotated 180 degrees and observed, "up and down" is read in reverse.

[0024] In the following description, the terms "top surface" and "bottom surface" may be read as "front surface" and "back surface," respectively. The "first main surface" and "second main surface" of each member are main surfaces that face each other; for example, if the "first main surface" is the top surface, the "second main surface" is the bottom surface. The terms "first main surface" and "second main surface" may be read as "one main surface" and "the other main surface," respectively.

[0025] (First Embodiment) <Structure of Semiconductor Device> A 6-in-1 power semiconductor module will be illustrated as an example of a semiconductor device according to the first embodiment. FIG. 1 is a perspective view of the semiconductor device according to the first embodiment, and FIG. 2 is a top view of the semiconductor device according to the first embodiment. As shown in FIGS. 1 and 2, the semiconductor device according to the first embodiment includes a plurality of (three) semiconductor units 1a-1c. Each of the plurality of semiconductor units 1a-1c is a 2-in-1 module for one phase, and the semiconductor units 1a-1c for three phases are arranged in one direction.

[0026] 1 and 2, the direction in which the semiconductor units 1a to 1c are lined up (the left-right direction in FIG. 2) is defined as the X-axis direction, and one direction in the X-axis direction (toward the right in FIG. 2) is defined as the positive direction. Furthermore, the direction perpendicular to the X-axis direction (the up-down direction in FIG. 2) is defined as the Y-axis direction, and one direction in the Y-axis direction (toward the top in FIG. 2) is defined as the positive direction. Furthermore, the direction perpendicular to the X-axis direction and the Y-axis direction (the front and back directions in FIG. 2) is defined as the Z-axis direction, and the direction above the semiconductor units 1a to 1c (toward the bottom in FIG. 2) is defined as the positive direction of the Z-axis. The definitions of directions and orientations shown in FIG. 3 and subsequent figures are the same as those in FIG. 1 and 2.

[0027] 1 and 2, the semiconductor units 1a to 1c are provided on the upper surface side of the cooler 5. The cooler 5 is made of a conductive material such as copper (Cu), a Cu alloy, aluminum (Al), or an Al alloy.

[0028] On the upper surface of the cooler 5, terminal cases (also referred to as "positive and negative terminal cases") 2a to 2c, which are made of resin (insulating members), and terminal cases (also referred to as "output terminal cases") 3a to 3c, which are also made of resin (insulating members), are provided to sandwich the semiconductor units 1a to 1c in a direction (Y-axis direction) perpendicular to the direction in which the semiconductor units 1a to 1c are arranged. The positive and negative terminal cases 2a to 2c and the output terminal cases 3a to 3c are made of a resin material such as polyphenylene sulfide (PPS). A plurality of control terminals 4a to 4c are provided on the upper surfaces of the semiconductor units 1a to 1c.

[0029] Fig. 3 is a side view of the semiconductor device according to the first embodiment as viewed in the positive direction of the X-axis, and Fig. 4 is a side view of the semiconductor device according to the first embodiment as viewed in the positive direction of the Y-axis. As shown in Figs. 3 and 4, cooling fins 5a are provided on the lower surface of the cooler 5. Note that the cooling fins 5a do not necessarily have to be provided on the lower surface of the cooler 5. A heat dissipation member 6 is provided between the cooler 5 and the plurality of semiconductor units 1a to 1c. The heat dissipation member 6 is made of, for example, a thermal interface material (TIM) or the like.

[0030] 4, protrusions 23a and 23b are provided on the lower surface of the positive and negative terminal case 2a. Assembly is facilitated by engaging (fitting) the protrusions 23a and 23b with recesses (cutouts) 51x and 51y provided in the cooler 5. The positive and negative terminal cases 2b and 2c have the same configuration as the positive and negative terminal case 2a.

[0031] 5 is a perspective view of the semiconductor unit 1a. The semiconductor unit 1a includes a sealing resin 10a having a substantially rectangular parallelepiped shape, and a plurality of (pair of) positive electrode portions 11a, a negative electrode portion 12a, an output portion 13a, and a plurality of control portions 14a to 14g, each of which is a conductive portion, protruding from a side surface of the sealing resin 10a.

[0032] The sealing resin 10a has a width direction that corresponds to the direction in which the semiconductor units 1a to 1c are lined up (X direction) and a length direction that corresponds to the direction perpendicular to the direction in which the semiconductor units 1a to 1c are lined up (Y axis direction). The sealing resin 10a is integrally formed with the pair of positive electrode parts 11a, negative electrode part 12a, output part 13a, and multiple control parts 14a to 14g by transfer molding or the like. The sealing resin 10a is made of an insulating resin material such as epoxy resin. A semiconductor chip is provided inside the sealing resin 10a.

[0033] The pair of positive electrode parts 11a, the negative electrode part 12a, the output part 13a, and the plurality of control parts 14a to 14g are conductively connected to a semiconductor chip inside the sealing resin 10a. The pair of positive electrode parts 11a, the negative electrode part 12a, the output part 13a, and the plurality of control parts 14a to 14g are made of a conductive material such as copper (Cu), a Cu alloy, aluminum (Al), or an Al alloy.

[0034] The pair of positive electrode portions 11a protrude from one side surface of the sealing resin 10a in the longitudinal direction (Y-axis direction) and extend in the longitudinal direction (Y-axis direction) of the sealing resin 10a. In the semiconductor device according to the first embodiment, the pair of positive electrode portions 11a constitute positive electrode terminals (also referred to as "main terminals" or "external connection terminals") that can be connected to an external member such as a capacitor by laser welding or the like. The pair of positive electrode portions 11a may be provided with fastening holes (through holes) that can be fastened to an external member with screws.

[0035] The negative electrode portion 12a protrudes from the same side of the sealing resin 10a as the pair of positive electrode portions 11a protrude from, and extends in the longitudinal direction (Y-axis direction) of the sealing resin 10a. The negative electrode portion 12a is located between the pair of positive electrode portions 11a and is spaced apart from the pair of positive electrode portions 11a. In the direction (X-axis direction) perpendicular to the extension direction of the pair of positive electrode portions 11a and the negative electrode portion 12a, the width W2 of the negative electrode portion 12a is wider than the width W1 of the pair of positive electrode portions 11a. In the semiconductor device according to the first embodiment, the negative electrode portion 12a constitutes a negative electrode terminal (also referred to as a "main terminal" or "external connection terminal") that can be connected to an external member such as a capacitor by laser welding or the like. The negative electrode portion 12a may be provided with a fastening hole (through hole) that can be screwed to an external member.

[0036] The output portion 13a protrudes from the side surface of the sealing resin 10a opposite to the side surface from which the pair of positive electrode portion 11a and negative electrode portion 12a protrude, and extends in the longitudinal direction (Y-axis direction) of the sealing resin 10a. In the direction perpendicular to the extension direction of the output portion 13a (X-axis direction), the width W3 of the output portion 13a is wider than the width W1 of the pair of positive electrode portion 11a and approximately the same as the width W2 of the negative electrode portion 12a. In the semiconductor device according to the first embodiment, the output portion 13a constitutes an output terminal (also referred to as a "main terminal" or "external connection terminal") that can be connected to an external member such as a motor by laser welding or the like. The output portion 13a may be provided with a fastening hole (through hole) that can be screwed to an external member.

[0037] The multiple control units 14a to 14g are exposed and protrude from the upper surface of the sealing resin 10a. Note that the multiple control units 14a to 14g may be exposed flush with the upper surface of the sealing resin 10a, rather than protruding from the upper surface. Of the multiple control units 14a to 14g, control units 14a to 14e are provided along one side of the sealing resin 10a in the longitudinal direction (Y-axis direction), and control units 14f and 14g are provided along the other side of the sealing resin 10a in the longitudinal direction (Y-axis direction). There are no particular limitations on the number and arrangement of the multiple control units 14a to 14g.

[0038] 6 is a schematic cross-sectional view of the cooler 5, heat dissipation member 6, and semiconductor unit 1a, taken along a cross section along the longitudinal direction (Y-axis direction) of the sealing resin 10a that passes through the negative electrode portion 12a and the output portion 13a of the semiconductor unit 1a. The semiconductor unit 1a includes a metal plate 15 provided on the upper surface of the heat dissipation member 6, an insulating layer 16 provided on the upper surface of the metal plate 15, and conductive layers 17a and 17b provided on the upper surface of the insulating layer 16. The metal plate 15, the insulating layer 16, and the conductive layers 17a and 17b may be formed of an insulated circuit board, such as a direct copper bonding (DCB) board or an active metal bonding (AMD) board.

[0039] The metal plate 15 is made of a conductive material such as copper (Cu), a Cu alloy, aluminum (Al), or an Al alloy. The insulating layer 16 is made of a resin insulating material such as polyphenylene sulfide (PPS) or liquid crystal polymer (LCP), or aluminum oxide (Al). ２ O ３ ), aluminum nitride (AlN), silicon nitride (Si ３ N ４ ) or boron nitride (BN) or other ceramic materials as the main component.

[0040] The conductive layers 17a and 17b are made of a conductive material such as copper (Cu), a Cu alloy, aluminum (Al), or an Al alloy. One end of the output unit 13a is connected to the upper surface of the conductive layer 17a by laser welding or the like. One end of the negative electrode unit 12a is connected to the upper surface of the conductive layer 17b by laser welding or the like. The number and arrangement positions of the conductive layers 17a and 17b are not particularly limited.

[0041] The semiconductor unit 1a further includes a semiconductor chip 19 provided on the upper surface side of the conductive layer 17a via a bonding material 18 such as solder or a sintered material, a wiring board (printed circuit board) 20 provided above the semiconductor chip 19, and a sealing resin 10a that seals the semiconductor chip 19, the printed circuit board 20, etc.

[0042] The semiconductor chip 19 may be made of, for example, silicon (Si), silicon carbide (SiC), gallium nitride (GaN), or gallium oxide (Ga ２ O ３The semiconductor chip 19 is made of a semiconductor such as silicon dioxide (SiO2) or diamond (C). The semiconductor chip 19 may be a field effect transistor (FET) such as a metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a reverse conducting insulated gate bipolar transistor (RC-IGBT) in which a diode is connected in anti-parallel to an IGBT, a static induction (SI) thyristor, a gate turn-off (GTO) thyristor, or the like. The type, number, and arrangement of the semiconductor chip 19 are not particularly limited. Here, as an example, the semiconductor chip 19 is assumed to constitute an IGBT having a collector electrode on the lower surface side and an emitter electrode and a gate electrode on the upper surface side.

[0043] The semiconductor chip 19 is conductively connected to the printed circuit board 20 via pin-shaped connecting members (pins) 20a and 20b. The connecting members 20a and 20b are press-fitted into the printed circuit board 20. The printed circuit board 20 may be a multilayer wiring board having a plurality of conductive layers with insulating layers interposed therebetween. The control units 14a to 14g shown in FIG. 5 are conductively connected to the printed circuit board 20. The control units 14a to 14g are conductively connected to the gate electrodes of the semiconductor chip 19 and the like via the printed circuit board 20. The semiconductor chip 19 and the printed circuit board 20 may be joined with a joining material such as solder or a sintered material, or may be joined via connecting members such as copper blocks or bumps instead of pins.

[0044] 1 to 4 have the same configuration as the semiconductor unit 1a shown in Figures 5 and 6. The semiconductor unit 1b includes a sealing resin 10b, and a pair of a positive electrode portion 11b, a negative electrode portion 12b, and an output portion 13b that protrude from the side surface of the sealing resin 10b. The semiconductor unit 1c includes a sealing resin 10c, and a pair of a positive electrode portion 11c, a negative electrode portion 12c, and an output portion 13c that protrude from the side surface of the sealing resin 10c.

[0045] 7 is a perspective view of the control terminal unit 4a. The control terminal unit 4a includes a terminal holding portion 40 made of a resin member (insulating member) and a plurality of control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) held by the terminal holding portion 40. The terminal holding portion 40 is formed integrally with the control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) by transfer molding or the like.

[0046] The terminal holder 40 is made of an insulating resin material such as an epoxy resin. The terminal holder 40 has a substantially rectangular parallelepiped outer shape and a figure-8 planar pattern with openings 40a and 40b. In plan view, the terminal holder 40 includes two stripe-shaped extension portions extending in the longitudinal direction (Y-axis direction) and three stripe-shaped connection portions extending in the lateral direction (X-axis direction) and connecting the two extension portions.

[0047] The plurality of control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) are made of a conductive material such as copper (Cu), a Cu alloy, aluminum (Al), or an Al alloy. The plurality of control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) are provided at positions corresponding to the plurality of control units 14a to 14g of the semiconductor unit 1a shown in FIG. 5 and are conductively connected to the plurality of control units 14a to 14g. The control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), and (41e, 42e) are provided on one of the two extending portions of the terminal holding portion 40. The control terminals (41f, 42f), and (41g, 42g) are provided on the other of the two extending portions of the terminal holding portion 40.

[0048] The control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), (41g, 42g) include joint portions 41a to 41g that protrude from the side surfaces of the terminal holding portion 40, and terminal portions 42a to 42g that are connected to the joint portions 41a to 41g inside the terminal holding portion 40 and protrude from the upper surface of the terminal holding portion 40. The joint portions 41a to 41g and the terminal portions 42a to 42g may be formed integrally.

[0049] The bonding portions 41a to 41g protrude from the side surfaces of the terminal holding portion 40 along the longitudinal direction (Y-axis direction) and extend in the short-side direction (X-axis direction) that is the lateral direction of the terminal holding portion 40. The bonding portions 41a to 41g may protrude from the underside of the terminal holding portion 40 instead of from the side surfaces of the terminal holding portion 40, bend in an L-shape, and extend in the short-side direction (X-axis direction) of the terminal holding portion 40. The bonding portions 41a to 41g may also be bent into an L-shape after transfer molding with the terminal holding portion 40. The bonding portions 41a to 41g are joined to the control portions 14a to 14g of the semiconductor unit 1a shown in FIG. 5 by laser welding or the like, and are electrically connected.

[0050] The terminal portions 42a to 42g protrude from the upper surface of the terminal holder 40 and extend upward (in the positive direction of the Z-axis). The terminal portions 42a to 42g are connectable to external components such as a control circuit board. That is, the control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), and (41e, 42e) function as external connection terminals connectable to external components. Here, the terminal portions 42a to 42g are illustrated as having the shape of press-fit terminals, but the shape of the terminal portions 42a to 42g is not particularly limited. The terminal portions 42a to 42g may be, for example, pin-shaped, rod-shaped, cylindrical, or polygonal prism-shaped.

[0051] Figure 8 is a perspective view of the control units 14a, 14b exposed on the upper surface of the sealing resin 10a of the semiconductor unit 1a and the control terminals (41a, 42a), (41b, 42b) of the control terminal unit 4a before the semiconductor unit 1a and the control terminal unit 4a are assembled, and Figure 9 is a perspective view of the control units 14a, 14b exposed on the upper surface of the sealing resin 10a of the semiconductor unit 1a and the control terminals (41a, 42a), (41b, 42b) of the control terminal unit 4a after the semiconductor unit 1a and the control terminal unit 4a are assembled.

[0052] As shown in FIG. 8 , the control unit 14a includes a pad (land) 141a exposed from the upper surface of the sealing resin 10a and having a circular planar pattern, and a pin 142a protruding from the upper surface of the pad 141a. The control unit 14b includes a pad (land) 141b exposed from the upper surface of the sealing resin 10a and having a circular planar pattern, and a pin 142b protruding from the upper surface of the pad 141b. Note that the control units 14a and 14b may not include the pads 141a and 141b, and may be composed only of pins 142a and 142b protruding from the upper surface of the sealing resin 10a. Meanwhile, the bonding portions 41a and 41b have a flat plate shape for bonding to the pads 141a and 141b. Holes 41x and 42x are provided in the bonding portions 41a and 41b.

[0053] As shown in FIG. 9 , when assembling the semiconductor unit 1a and the control terminal section 4a, the pins 142a and 142b of the control sections 14a and 14b are engaged (fitted) with the holes 41x and 42x of the joint sections 41a and 41b, facilitating assembly. The control sections 14a and 14b are then joined to the joint sections 41a and 41b by laser welding or the like. The joint sections between the control sections 14c to 14g shown in FIG. 5 and the control terminals (41c and 42c), (41d and 42d), (41e and 42e), (41f and 42f), and (41g and 42g) shown in FIG. 7 have the same configuration as the joint sections between the control sections 14a and 14b and the control terminals (41a and 42a), (41b and 42b) shown in FIG. 9 .

[0054] 10 and 11 are perspective views showing modified examples of the control units 14a, 14b exposed on the upper surface of the sealing resin 10a of the semiconductor unit 1a shown in FIGS. 8 and 9 and the control terminals (41a, 42a, 43), (41b, 42b, 43b) of the control terminal unit 4a. FIG. 10 shows the state before the semiconductor unit 1a and the control terminal unit 4a are assembled, and FIG. 11 shows the state after the semiconductor unit 1a and the control terminal unit 4a are assembled. In FIGS. 10 and 11, the terminal holder 40 that holds the control terminals (41a, 42a, 43), (41b, 42b, 43b) is not shown.

[0055] As shown in FIG. 10 , the control units 14a and 14b are formed by pads with circular planar patterns that are exposed flush with the upper surface of the sealing resin 10a, and no pins are provided on the upper surfaces of the pads. Meanwhile, the control terminals (41a, 42a, 43a) are held within the terminal holder 40 between the bonding portion 41a and the terminal portion 42a and have a bent intermediate portion 43a. The control terminals (41b, 42b, 43b) are held within the terminal holder 40 between the bonding portion 41b and the terminal portion 42b and have a bent intermediate portion 43b. The bonding portions 41a and 41b have a flat plate shape for bonding to the control units 14a and 14b. The bonding portions 41a and 41b do not have holes.

[0056] 11, when assembling the semiconductor unit 1a and the control terminal portion 4a, the bonding portions 41a and 41b are positioned on the upper surfaces of the control portions 14a and 14b, and then the control portions 14a and 14b are bonded to the bonding portions 41a and 41b by laser welding or the like.

[0057] Fig. 12 is a perspective view of the positive and negative electrode terminal case 2a. The positive and negative electrode terminal case 2a accommodates the pair of positive electrode part 11a and negative electrode part 12a of the semiconductor unit 1a shown in Fig. 5, and has a function of ensuring insulation distances, including creepage distances and spatial distances, between the pair of positive electrode part 11a and negative electrode part 12a, and between the pair of positive electrode part 11a and negative electrode part 12a and the cooler 5.

[0058] As shown in FIG. 12 , the positive and negative terminal case 2a includes a bottom plate 21 and walls 22a to 22d that protrude from the upper surface of the bottom plate 21 and extend upward. The walls 22a to 22d extend parallel to each other in the extension direction (Y-axis direction) of the pair of positive electrode portion 11a and negative electrode portion 12a of the semiconductor unit 1a shown in FIG. 5 . The spacing between the walls 22a and 22b and the spacing between the walls 22c and 22d are substantially the same and are narrower than the spacing between the walls 22b and 22c. One of the pair of positive electrode portions 11a of the semiconductor unit 1a is housed in the space surrounded by the bottom plate 21 and the walls 22a and 22b. The negative electrode portion 12a of the semiconductor unit 1a is housed in the space surrounded by the bottom plate 21 and the walls 22b and 22c. The other of the pair of positive electrode parts 11a of the semiconductor unit 1a is housed in the space surrounded by the bottom plate 21 and the walls 22c, 22d. The positive and negative electrode terminal cases 2b, 2c shown in Figures 1 to 4 have the same configuration as the positive and negative electrode terminal case 2a shown in Figure 12.

[0059] 13 is a perspective view of the output terminal case 3a. The output terminal case 3a accommodates the output part 13a of the semiconductor unit 1a shown in FIG. 5 and has the function of ensuring an insulation distance, including a creepage distance and a spatial distance, between the output part 13a and the cooler 5.

[0060] The output terminal case 3a shown in FIG. 13 is viewed from a different viewpoint than the positive and negative terminal case 2a shown in FIG. 12, but has substantially the same shape as the positive and negative terminal case 2a. The output terminal case 3a includes a bottom plate 31 and walls 32a to 32d that protrude from the upper surface of the bottom plate 31 and extend upward. The output section 13a of the semiconductor unit 1a is housed in a space surrounded by the bottom plate 31 and the walls 32b and 32c. The output terminal cases 3b and 3c shown in FIGS. 1 to 4 also have a similar configuration to the output terminal case 3a shown in FIG. 13. Note that the output terminal case 3a may have a different shape from the positive and negative terminal case 2a. For example, the output terminal case 3a may be composed of only a portion of the bottom plate 31 that houses the output section 13a and the walls 32b and 32c, and may not include the other portion of the bottom plate 31 or the walls 32a and 32d.

[0061] 14 is an enlarged side view of the connection portion between the semiconductor unit 1a and the positive and negative terminal cases 2a of the region A surrounded by the dashed line in FIG. 3. In FIG. 14, the positive and negative terminal cases 2a are separated from the sealing resin 10a, but the positive and negative terminal cases 2a may be in contact with the sealing resin 10a. The positive and negative terminal cases 2a have tapered portions 25 at the lower ends thereof. The ends of the positive and negative terminal cases 2a do not have to have tapered portions 25. The lower surface of the positive portion 11a at the position where the bottom plate 21 of the positive and negative terminal cases 2a and the sealing resin 10a are separated faces the upper surface of the cooler 5 without the positive and negative terminal cases 2a in between.

[0062] The positive electrode portion 11a protruding from the side surface of the sealing resin 10a is housed in the positive and negative electrode terminal case 2a. Although Fig. 14 illustrates an example in which the positive electrode portion 11a is separated from the bottom plate 21 of the positive and negative electrode terminal case 2a, the positive electrode portion 11a may be in contact with the bottom plate 21 of the positive and negative electrode terminal case 2a.

[0063] The space surrounded by the upper surface of the cooler 5, the heat dissipation member 6, the sealing resin 10a, the positive electrode portion 11a, and the positive and negative electrode terminal cases 2a is filled with an insulating adhesive 7 to bond the components together. An epoxy resin-based adhesive or the like can be used as the insulating adhesive 7. The viscosity of the insulating adhesive 7 is, for example, about 5000 mPa·s (25°C) or higher. The insulating adhesive 7 ensures an insulation distance, including a creepage distance and a spatial distance, between the positive electrode portion 11a and the cooler 5. The insulating adhesive 7 may be present between the lower surface of the sealing resin 10a and the cooler 5. The insulating adhesive 7 may be present between the bottom plate 21 of the positive and negative electrode terminal cases 2a and the cooler 5. The insulating adhesive 7 may be present between the positive electrode portion 11a housed in the positive and negative electrode terminal cases 2a and the bottom plate 21.

[0064] Although not shown, the insulating adhesive 7 is also filled in the space surrounded by the upper surface of the cooler 5, the heat dissipation member 6, the sealing resin 10a, the negative electrode portion 12a, and the positive and negative electrode terminal case 2a, and bonds the respective components together. That is, the insulating adhesive 7 covers at least the area of ​​the upper surface of the cooler 5 facing the positive electrode portion 11a and the negative electrode portion 12a in a plan view. The insulating adhesive 7 ensures an insulating distance between the negative electrode portion 12a and the cooler 5. The insulating adhesive 7 may be inserted between the negative electrode portion 12a housed in the positive and negative electrode terminal case 2a and the bottom plate 21.

[0065] The insulating adhesive 7 is further provided in the space surrounded by the upper surface of the cooler 5, the heat dissipation member 6, the sealing resin 10b, the positive electrode portion 11b, the negative electrode portion 12b, and the positive and negative electrode terminal case 2b, and in the space surrounded by the upper surface of the cooler 5, the heat dissipation member 6, the sealing resin 10c, the positive electrode portion 11c, the negative electrode portion 12c, and the positive and negative electrode terminal case 2c, to bond the respective components together. The insulating adhesive 7 ensures an insulating distance between the cooler 5 and the positive electrode portions 11b, 11c and the negative electrode portions 12b, 12c.

[0066] As shown in FIG. 3 , an insulating adhesive 7x similar to the insulating adhesive 7 is also provided in the space surrounded by the top surface of the cooler 5, the heat dissipation member 6, the sealing resin 10a, the output section 13a, and the output terminal case 3a, bonding the respective components together. The insulating adhesive 7x ensures an insulating distance between the output section 13a and the cooler 5. Although not shown, insulating adhesive 7x is also provided in the space surrounded by the top surface of the cooler 5, the heat dissipation member 6, the sealing resin 10b, the output section 13b, and the output terminal case 3b, and in the space surrounded by the top surface of the cooler 5, the heat dissipation member 6, the sealing resin 10c, the output section 13c, and the output terminal case 3c, bonding the respective components together. The insulating adhesive 7x ensures an insulating distance between the output sections 13b and 13c and the cooler 5.

[0067] FIG. 15 is a modified example of FIG. 14 , and like FIG. 14 , is a side view of the connection portion between the semiconductor unit 1a and the positive and negative terminal cases 2a. Instead of the insulating adhesive 7 shown in FIG. 14 , as shown in FIG. 15 , an insulating sheet 7a, which is a sheet-shaped (plate-shaped) insulating member, is provided on the upper surface of the cooler 5 in a position facing the positive electrode portion 11a. The insulating sheet 7a may extend under the outer edge of the sealing resin 10a. The insulating sheet 7a may extend under the positive and negative terminal cases 2a. The insulating sheet 7a may be made of insulating paper, or an insulating material such as polyimide or polyamide, epoxy resin, or polyphenylene sulfide (PPS) resin. The insulating sheet 7a ensures an insulating distance between the positive electrode portion 11a and the cooler 5.

[0068] Although not shown, the insulating sheet 7a also extends to a position on the upper surface of the cooler 5 facing the negative electrode portion 12a. That is, in a plan view, the insulating sheet 7a covers at least the area of ​​the upper surface of the cooler 5 facing the positive electrode portion 11a and the negative electrode portion 12a, and further extends to the lower surface of the outer edge of the semiconductor unit 1a and the lower surface of the positive and negative electrode terminal case 2a. The insulating sheet 7a ensures an insulation distance between the negative electrode portion 12a and the cooler 5. The insulating sheet 7a also extends to a position on the upper surface of the cooler 5 facing the positive electrode portions 11b, 11c and the negative electrode portions 12b, 12c. The insulating sheet 7a ensures an insulation distance between the positive electrode portions 11b, 11c and the negative electrode portions 12b, 12c and the cooler 5.

[0069] An insulating sheet 7b (see FIG. 17) similar to the insulating sheet 7a is also provided on the upper surface of the cooler 5 in a position facing the output parts 13a to 13c. In a plan view, the insulating sheet 7b covers at least the area of ​​the upper surface of the cooler 5 facing the output parts 13a to 13c, and further extends to the lower surfaces of the outer edges of the semiconductor units 1a to 1c and the lower surfaces of the output terminal cases 3a to 3c. The insulating sheet 7b ensures an insulating distance between the output parts 13a to 13c and the cooler 5.

[0070] FIG. 16 is a further modified example of FIG. 14 , and, like FIG. 14 , is a side view of the connection portion between the semiconductor unit 1a and the positive and negative terminal cases 2a. Instead of the insulating adhesive 7 shown in FIG. 14 , as shown in FIG. 16 , a protruding portion 24 of the positive and negative terminal cases 2a is provided at a position facing the positive electrode portion 11a on the upper surface of the cooler 5. The protruding portion 24 may extend into the underside of the sealing resin 10a. The protruding portion 24 is made of the same material as the positive and negative terminal cases 2a and is formed integrally with the positive and negative terminal cases 2a. The protruding portion 24 ensures an insulating distance between the positive electrode portion 11a and the cooler 5.

[0071] Although not shown in the figure, a protrusion 24 is also provided extending from a position facing the negative electrode portion 12 a on the upper surface of the cooler 5. The protrusion 24 can ensure an insulating distance between the negative electrode portion 12 a and the cooler 5.

[0072] Protruding portions similar to protruding portion 24 are also formed integrally with positive and negative electrode terminal cases 2b and 2c, and are also provided extending to positions facing positive electrode portions 11b and 11c and negative electrode portions 12b and 12c on the upper surface of cooler 5. The protruding portions ensure an insulation distance between positive electrode portions 11b and 11c and negative electrode portions 12b and 12c and cooler 5.

[0073] Protruding portions similar to protruding portion 24 are also provided integrally with output terminal cases 3a to 3c, and are also provided at positions facing output portions 13a to 13c on the upper surface of cooler 5. The protruding portions ensure an insulating distance between output portions 13a to 13c and cooler 5.

[0074] <Method of Manufacturing Semiconductor Device> An example of a method of manufacturing (assembling) the semiconductor device according to the first embodiment will be described with reference to Fig. 17 and other figures. Fig. 17 is an exploded perspective view of the semiconductor device according to the first embodiment. Fig. 17 illustrates a case in which, as described in the modified example of Fig. 15, insulating sheets 7a are arranged at the connection portions between semiconductor units 1a to 1c and positive and negative terminal cases 2a to 2c, and insulating sheets 7b are arranged at the connection portions between semiconductor units 1a to 1c and output terminal cases 3a to 3c.

[0075] First, by transfer molding or the like, semiconductor units 1a to 1c are prepared, each of which includes sealing resins 10a to 10c, positive electrode portions 11a to 11c, negative electrode portions 12a to 12c, and output portions 13a to 13c protruding from the side surfaces of the sealing resins 10a to 10c, and control portions 14a to 14g exposed from the top surfaces of the sealing resins 10a to 10c. In addition, by transfer molding or the like, control terminal units 4a to 4c are prepared, which include control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) and a terminal holding unit 40 that holds the control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g).

[0076] Next, the semiconductor units 1a to 1c, the positive and negative terminal cases 2a to 2c, and the output terminal cases 3a to 3c are arranged on the upper surface side of the cooler 5, with the heat dissipation member 6 and the insulating sheets 7a and 7b interposed therebetween. When an insulating adhesive 7 is used instead of the insulating sheets 7a and 7b, the insulating adhesive 7 is filled in the gaps between the cooler 5 and the positive electrode parts 11a to 11c, the negative electrode parts 12a to 12c, and the output parts 13a to 13c.

[0077] Next, the control terminal portions 4a to 4c are arranged on the upper surface sides of the semiconductor units 1a to 1c. The control portions 14a to 14g of the semiconductor unit 1a are joined to the control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) of the control terminal portion 4a by laser welding or the like. The control portions of the semiconductor units 1b and 1c are also joined to the control terminals of the control terminal portions 4b and 4c by laser welding or the like. In this manner, the semiconductor device according to the first embodiment shown in FIGS. 1 to 4 is completed.

[0078] According to the semiconductor device of the first embodiment, control units 14a to 14g are provided on the upper surfaces of semiconductor units 1a to 1c, and control terminal units 4a to 4c are provided separately from semiconductor units 1a to 1c, each having control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) that are conductively connected to control units 14a to 14g. This makes it possible to provide a variety of control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) while maintaining the transfer moldability of semiconductor units 1a to 1c. Therefore, by providing the control terminal units 4a to 4c that meet customer requirements, it is possible to meet a variety of interface requirements without changing the semiconductor units 1a to 1c.

[0079] Furthermore, in the semiconductor device according to the first embodiment, positive and negative terminal cases 2a to 2c are disposed between the cooler 5 and the positive and negative electrode portions 11a to 11c and 12a to 12c, respectively, and output terminal cases 3a to 3c are disposed between the cooler 5 and the output portions 13a to 13c. Furthermore, by filling the areas (gaps) surrounded by the side surfaces of the sealing resins 10a to 10c of the semiconductor units 1a to 1c, the positive and negative electrode portions 11a to 11c, the negative electrode portions 12a to 12c, the output portions 13a to 13c, the positive and negative electrode terminal cases 2a to 2c, and the output terminal cases 3a to 3c with insulating adhesive 7, 7x, it is possible to ensure an insulation distance and reduce the module size. Therefore, by providing positive and negative terminal cases 2a to 2c and output terminal cases 3a to 3c that meet customer requirements, it is possible to accommodate a variety of interface requirements without modifying the semiconductor units 1a to 1c.

[0080] <Modification of First Embodiment> Fig. 18 is a perspective view of positive and negative terminal cases 2a to 2c of a semiconductor device according to a modification of the first embodiment. As shown in Fig. 18, the semiconductor device according to the modification of the first embodiment differs from the semiconductor device according to the modification of the first embodiment in that the positive and negative terminal cases 2a to 2c are integrally formed with one another via connection portions 2d and 2e. Fastening holes (through holes) 2x and 2y that can be fastened with screws are provided in the connection portions 2d and 2e.

[0081] 19 is a perspective view of output terminal cases 3a to 3c of a semiconductor device according to a modification of the first embodiment. As shown in FIG. 19, the semiconductor device according to the modification of the first embodiment differs from the semiconductor device according to the modification of the first embodiment in that output terminal cases 3a to 3c are integrally formed with one another via connecting portions 3d and 3e. Fastening holes (through holes) 3x and 3y that can be screwed are provided in connecting portions 3d and 3e. Other configurations of the semiconductor device according to the modification of the first embodiment are substantially the same as those of the semiconductor device according to the first embodiment, and therefore, redundant description will be omitted.

[0082] In the semiconductor device according to the modification of the first embodiment, the positive and negative terminal cases 2a to 2c and the output terminal cases 3a to 3c are integrally formed. This makes assembly easier than when the positive and negative terminal cases 2a to 2c and the output terminal cases 3a to 3c are separate. Note that the control terminals 4a to 4c may also be integrally formed instead of being individually formed.

[0083] Second Embodiment Fig. 20 is a perspective view of a semiconductor device according to a second embodiment. Fig. 21 is a top view of the semiconductor device according to the second embodiment. Fig. 22 is a side view of the semiconductor device according to the second embodiment as viewed in the positive direction of the X-axis. Fig. 23 is a side view of the semiconductor device according to the second embodiment as viewed in the positive direction of the Y-axis.

[0084] 20 to 23, the semiconductor device according to the second embodiment includes a cooler 5, semiconductor units 1a to 1c provided on the upper surface of the cooler 5, and control terminal portions 4a to 4c provided on the upper surface of the semiconductor units 1a to 1c. In the semiconductor device according to the second embodiment, the configurations of the cooler 5 and the semiconductor units 1a to 1c are substantially similar to those of the cooler 5 and the semiconductor units 1a to 1c of the semiconductor device according to the first embodiment shown in FIGS.

[0085] However, the semiconductor device according to the second embodiment differs from the semiconductor device according to the first embodiment shown in FIGS. 1 to 4 in that it further includes positive and negative terminal portions 8a to 8c including positive terminals 101a to 101c and negative terminals 102a to 102c, and output terminal portions 9a to 9c including output terminals 103a to 103c, and in that the shapes of the plurality of control terminal portions 4a to 4c are different.

[0086] As shown in Figures 20 to 23, in a direction (Y-axis direction) perpendicular to the arrangement direction of the semiconductor units 1a to 1c, a positive and negative terminal section 8a including a positive terminal 101a and a negative terminal 102a, and an output terminal section 9a including an output terminal 103a are provided on either side of the semiconductor unit 1a. The positive terminal 101a is conductively connected to the positive electrode section 11a (see Figures 1 to 5) of the semiconductor unit 1a. The negative terminal 102a is conductively connected to the negative electrode section 12a (see Figures 1 to 5) of the semiconductor unit 1a. The output terminal 103a is conductively connected to the output section 13a (see Figures 1 to 5) of the semiconductor unit 1a.

[0087] In a direction (Y-axis direction) perpendicular to the arrangement direction of the semiconductor units 1a to 1c, a positive and negative terminal section 8b including a positive terminal 101b and a negative terminal 102b, and an output terminal section 9b including an output terminal 103b are provided on either side of the semiconductor unit 1b. The positive terminal 101b is conductively connected to the positive electrode section 11b (see FIGS. 1 to 4) of the semiconductor unit 1b. The negative terminal 102b is conductively connected to the negative electrode section 12b (see FIGS. 1 to 4) of the semiconductor unit 1b. The output terminal 103b is conductively connected to the output section 13b (see FIGS. 1 to 4) of the semiconductor unit 1b.

[0088] In a direction (Y-axis direction) perpendicular to the arrangement direction of the semiconductor units 1a to 1c, a positive and negative terminal section 8c including a positive terminal 101c and a negative terminal 102c, and an output terminal section 9c including an output terminal 103c are provided on either side of the semiconductor unit 1c. The positive terminal 101c is conductively connected to the positive electrode section 11c (see FIGS. 1 to 4) of the semiconductor unit 1c. The negative electrode terminal 102c is conductively connected to the negative electrode section 12c (see FIGS. 1 to 4) of the semiconductor unit 1c. The output terminal 103c is conductively connected to the output section 13c (see FIGS. 1 to 4) of the semiconductor unit 1c.

[0089] In the semiconductor device according to the second embodiment, instead of the positive electrode portions 11a to 11c, the negative electrode portions 12a to 12c, and the output portions 13a to 13c of the semiconductor units 1a to 1c, the positive electrode terminals 101a to 101c, the negative electrode terminals 102a to 102c, and the output terminals 103a to 103c constitute external connection terminals that can be connected to external components.

[0090] Fig. 24 is a perspective view of the semiconductor device according to the second embodiment, viewed from the underside. As shown in Fig. 24, the positive and negative electrode terminal 8a has protrusions 8x and 8y that engage with recesses 51x and 51y of the cooler 5. The positive and negative electrode terminals 8b and 8c have the same configuration as the positive and negative electrode terminal 8a. The output terminal 9a has protrusions 9x and 9y that engage with holes 52x and 52y of the cooler 5. The output terminals 9b and 9c have the same configuration as the output terminal 9a.

[0091] 25 is a top view of the control terminal portion 4a of the semiconductor device according to the second embodiment. The configurations of the terminal holder 40 and the control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) of the control terminal portion 4a are the same as those of the semiconductor device according to the first embodiment. The semiconductor device according to the second embodiment differs from the semiconductor device according to the first embodiment in that a hole 40c is provided in the control terminal portion 4a. As shown in FIGS. 20 and 21 , the hole 40c of the control terminal portion 4a engages with the protrusion 92c of the output terminal portion 9a when assembling the control terminal portion 4a and the semiconductor unit 1a, thereby facilitating assembly.

[0092] 26 is a bottom view of a control terminal portion 4a of a semiconductor device according to the second embodiment. The semiconductor device according to the second embodiment differs from the semiconductor device according to the first embodiment in that a protrusion 40d is provided on the control terminal portion 4a. The protrusion 40d of the control terminal portion 4a engages with a hole 81x (see FIG. 28) in the positive and negative terminal portions 8a when assembling the control terminal portion 4a and the positive and negative terminal portions 8a, thereby facilitating assembly. The control terminal portions 4b and 4c also have a configuration similar to that of the control terminal portion 4a shown in FIGS. 25 and 26.

[0093] 27 is a bottom view of the semiconductor unit 1a, the positive and negative terminal portions 8a, and the output terminal portion 9a. A pair of positive electrode portions 11a of the semiconductor unit 1a are joined to a positive electrode terminal 101a exposed on the bottom surface of the positive and negative terminal portion 8a by laser welding or the like from the bottom side. The negative electrode portion 12a of the semiconductor unit 1a is joined to a negative electrode terminal 102a exposed on the bottom surface of the positive and negative terminal portion 8a by laser welding or the like from the bottom side. The output portion 13a of the semiconductor unit 1a is joined to an output terminal 103a exposed on the bottom surface of the output terminal portion 9a by laser welding or the like from the bottom side.

[0094] The connection portion of the semiconductor unit 1b, the positive and negative terminal portions 8b, and the output terminal portion 9b shown in FIGS. 20 to 23, and the connection portion of the semiconductor unit 1c, the positive and negative terminal portions 8c, and the output terminal portion 9c shown in FIGS. 20 to 23 also have the same configuration as the connection portion of the semiconductor unit 1a, the positive and negative terminal portions 8a, and the output terminal portion 9a shown in FIG.

[0095] 28 is a top view of the positive and negative electrode terminal portion 8a. The positive and negative electrode terminal portion 8a includes a positive electrode terminal 101a, a negative electrode terminal 102a, and a holding portion 81 which is a resin member (insulating member) that holds the positive electrode terminal 101a and the negative electrode terminal 102a.

[0096] The positive electrode terminal 101a and the negative electrode terminal 102a are made of a conductive material such as copper (Cu), a Cu alloy, aluminum (Al), or an Al alloy. An exposed end (terminal portion) 111a, which is a part of the positive electrode terminal 101a, and an exposed end (terminal portion) 112a, which is a part of the negative electrode terminal 102a, are exposed from the holding portion 81. The terminal portion 111a of the positive electrode terminal 101a is provided with a fastening hole (through hole) 111x that can be fastened to an external member with a screw. The terminal portion 112a of the negative electrode terminal 102a is provided with a fastening hole (through hole) 112x that can be fastened to an external member with a screw. Note that when the positive electrode terminal 101a and the negative electrode terminal 102a are joined to the external member by laser welding or the like, the positive electrode terminal 101a and the negative electrode terminal 102a do not necessarily have to have a fastening hole.

[0097] The holding portion 81 is made of a resin material such as polyphenylene sulfide (PPS). A hole 81x is provided in the holding portion 81. The hole 81x engages with the protrusion 40d of the control terminal portion 4a shown in FIG. 26, facilitating assembly. A wall 82 is provided between the terminal portion 111a of the positive electrode terminal 101a and the terminal portion 112a of the negative electrode terminal 102a of the holding portion 81. The wall 82 ensures an insulating distance between the terminal portion 111a of the positive electrode terminal 101a and the terminal portion 112a of the negative electrode terminal 102a. The holding portion 81 is provided with protrusions 85a and 85b. The protrusions 85a and 85b are positioned relative to the control terminal portion 4a as shown in FIGS. 20 and 21 .

[0098] FIG. 29 is a bottom view of the positive and negative electrode terminal 8a. Walls 83a to 83d are provided on the underside of the holding portion 81. One of the pair of joints 111b, which is part of the positive electrode terminal 101a, is exposed between the walls 83a and 83b. The walls 83a and 83b and the wall 83e of the holding portion 81 connecting the walls 83a and 83b extend downward beyond one of the pair of joints 111b. A space (recess) 84a is formed on the underside of one of the pair of joints 111b, which is surrounded on three sides by the walls 83a, 83b, and 83e. One of the pair of joints 111b has a portion connected to one of the pair of positive electrode portions 11a. When one of the pair of joints 111b and one of the pair of positive electrode portions 11a are joined by laser welding, one of the pair of joints 111b has a portion fused and joined to one of the pair of positive electrode portions 11a.

[0099] A joint portion 112b, which is a part of the negative electrode terminal 102a, is exposed between the walls 83b and 83c. The walls 83b and 83c and a wall 83f of the holding portion 81 connecting the walls 83b and 83c extend downward beyond the joint portion 112b. A space (recess) 84b is formed on the underside of the joint portion 112b, which is surrounded on three sides by the walls 83b, 83c, and 83f. The joint portion 112b has a portion connected to the negative electrode portion 12a. When the joint portion 112b and the negative electrode portion 12a are joined by laser welding, the joint portion 112b has a portion fused and joined to the negative electrode portion 12a.

[0100] The other of the pair of joints 111b, which is part of the positive electrode terminal 101a, is exposed between the walls 83c and 83d. The walls 83c and 83d and a wall 83g of the holding part 81 connecting the walls 83c and 83d extend downward beyond the other of the pair of joints 111b. A space (recess) 84c is formed on the underside of the other of the pair of joints 111b, which is surrounded on three sides by the walls 83c, 83d, and 83g. The other of the pair of joints 111b has a portion connected to the other of the pair of positive electrode parts 11a. When the other of the pair of joints 111b and the other of the pair of positive electrode parts 11a are joined by laser welding, the other of the pair of joints 111b has a portion fused and joined to the other of the pair of positive electrode parts 11a.

[0101] The joint 112b is located between the pair of joints 111b. The wall 83b ensures an insulating distance between one of the pair of joints 111b and the joint 112b. The wall 83c ensures an insulating distance between the joint 112b and the other of the pair of joints 111b.

[0102] 30 is a top view of only the positive terminal 101a and the negative terminal 102a, with the holding portions 81 of the positive and negative terminals 8a not shown. The positive terminal 101a includes a terminal portion 111a exposed from the upper surface of the holding portion 81, an intermediate portion 111c connected to the terminal portion 111a and provided inside the holding portion 81, and a pair of joint portions 111b connected to the intermediate portion 111c and exposed from the lower surface of the holding portion 81. The negative terminal 102a includes a terminal portion 112a exposed from the upper surface of the holding portion 81, an intermediate portion 112c connected to the terminal portion 112a and provided inside the holding portion 81, and having a bent portion, and a joint portion 112b connected to the intermediate portion 112c and exposed from the lower surface of the holding portion 81. In plan view, the intermediate portion 112c of the negative electrode terminal 102a has a region where the main surfaces thereof overlap (intersect) with the intermediate portion 111c of the positive electrode terminal 101a.

[0103] 31 is an enlarged side view of the connection portion between the semiconductor unit 1a and the positive and negative electrode terminals 8a of the dashed-line region A shown in FIG. 22. As shown in FIG. 31, an insulating adhesive 7 is filled in the space surrounded by the upper surface of the cooler 5, the heat dissipation member 6, the sealing resin 10a, one of the pair of positive electrode portions 11a, and the positive and negative electrode terminals 8a, bonding the components together. In a plan view, the insulating adhesive 7 covers at least the area of ​​the upper surface of the cooler 5 facing the positive electrode portion 11a and the negative electrode portion 12a. An epoxy resin-based adhesive or the like can be used as the insulating adhesive 7. The viscosity of the insulating adhesive 7 is, for example, approximately 5000 mPa·s (25°C) or higher.

[0104] Although not shown in the figure, the insulating adhesive 7 is also filled in the space surrounded by the upper surface of the cooler 5, the heat dissipation member 6, the sealing resin 10a, the other of the pair of positive electrode portions 11a, and the positive and negative electrode terminal portions 8a, bonding the respective components together. The insulating adhesive 7 is also filled in the space surrounded by the upper surface of the cooler 5, the heat dissipation member 6, the sealing resin 10a, the negative electrode portion 12a, and the positive and negative electrode terminal portions 8a, bonding the respective components together.

[0105] 32 is a cross-sectional view of the connection between the semiconductor unit 1a and the positive and negative electrode terminals 8a, taken along line A-A' in FIG. 27. As shown in FIG. 32, one of the pair of joints 111b of the positive electrode terminal 101a and one of the pair of positive electrode portions 11a of the semiconductor unit 1a are joined by laser welding or the like from the underside. An insulating adhesive 7 is filled in a space (recess) 84a surrounded by the upper surface of the cooler 5, the side surface of the sealing resin 10a of the semiconductor unit 1a, the underside of one of the pair of positive electrode portions 11a, and the walls 83a, 83b, and 83e of the holder 81, bonding the respective components together. The insulating adhesive 7 ensures an insulating distance between one of the pair of positive electrode portions 11a and the cooler 5.

[0106] Although not shown in the drawings, the other of the pair of joint portions 111b of the positive terminal 101a and the other of the pair of positive electrode portions 11a of the semiconductor unit 1a are joined by laser welding or the like. An insulating adhesive 7 is filled in a space (recess) 84b surrounded by the upper surface of the cooler 5, the side surface of the sealing resin 10a of the semiconductor unit 1a, the lower surface of the other of the pair of positive electrode portions 11a, and the walls 83b, 83c, and 83f of the holding portion 81, and bonds the respective components. The insulating adhesive 7 ensures an insulating distance between the other of the pair of positive electrode portions 11a and the cooler 5.

[0107] Furthermore, the joint portion 112b of the negative electrode terminal 102a and the negative electrode portion 12a of the semiconductor unit 1a are joined by laser welding or the like. An insulating adhesive 7 is filled in a space (recess) 84c surrounded by the upper surface of the cooler 5, the side surface of the sealing resin 10a of the semiconductor unit 1a, the lower surface of the negative electrode portion 12a, and the walls 83c, 83d, and 83g of the holding portion 81, and bonds the respective components. The insulating adhesive 7 ensures an insulating distance between the negative electrode portion 12a and the cooler 5. The connection portions of the semiconductor units 1b and 1c and the positive and negative electrode terminal portions 8b and 8c have the same configuration as the connection portion of the semiconductor unit 1a and the positive and negative electrode terminal portion 8a.

[0108] In the semiconductor device according to the second embodiment, an insulating sheet may be provided on the upper surface of the cooler 5 instead of the insulating adhesive 7 shown in FIGS. 31 and 32 . The insulating sheet covers at least the areas of the upper surface of the cooler 5 facing the positive electrode portions 11a to 11c, the negative electrode portions 12a to 12c, and the output portions 13a to 13c in a plan view. The insulating sheet also extends to the lower surfaces of the outer edges of the semiconductor units 1a to 1c, the lower surfaces of the positive and negative electrode terminal portions 8a to 8c, and the lower surfaces of the output terminal portions 9a to 9c. The insulating sheet ensures an insulating distance between the cooler 5 and the pairs of positive electrode portions 11a to 11c and negative electrode portions 12a to 12c.

[0109] 33 is a top view of the output terminal unit 9a. The output terminal unit 9a includes an output terminal 103a and a holding unit 91 that holds the output terminal 103a. The output terminal 103a is made of a conductive material such as copper (Cu), a Cu alloy, aluminum (Al), or an Al alloy. An exposed end (terminal unit) 113a, which is a part of the output terminal 103a, is exposed from the holding unit 91. The terminal unit 113a of the output terminal 103a is provided with a fastening hole (through hole) 113x that can be fastened to an external member with a screw.

[0110] The holding portion 91 is made of a resin material such as polyphenylene sulfide (PPS). Protrusions 92a to 92c are provided on the upper surface of the holding portion 91. The protrusions 92c are engaged with (fit into) the holes 40c of the control terminal portion 4a shown in Figures 25 and 26, making assembly easier.

[0111] FIG. 34 is a bottom view of the output terminal portion 9a. Protrusions 9x and 9y are provided on the underside of the holding portion 91. As shown in FIG. 24, the protrusions 9x and 9y engage (fit) with holes 52x and 52y in the cooler 5, facilitating assembly. A joint portion 113b, which is part of the output terminal 103a, is exposed on the underside of the holding portion 91. Although not shown, the output terminal 103a includes a terminal portion 113a exposed from the upper surface of the holding portion 91, an intermediate portion connected to the terminal portion 113a and provided inside the holding portion 91, and a joint portion 113b connected to the intermediate portion and exposed from the lower surface of the holding portion 91. Around the joint portion 113b, walls 93a to 93c of the holding portion 91 extend below the joint portion 113b. A space (recess) 94 is formed surrounded on three sides by the walls 93a to 93c.

[0112] The output section 13a of the semiconductor unit 1a is placed on the underside of the joint section 113b and joined by laser welding or the like. A space 94 surrounded by the side surface of the sealing resin 10a of the semiconductor unit 1a, the underside of the output section 13a, the upper surface of the cooler 5, and the walls 93a to 93c of the holding section 91 is filled with an insulating adhesive 7x (see FIG. 22 ) similar to the insulating adhesive 7, bonding the various components together. In a plan view, the insulating adhesive 7x covers at least the area of ​​the upper surface of the cooler 5 facing the output section 13a. The insulating adhesive 7x ensures an insulating distance between the output section 13a and the cooler 5. The connection portions of the semiconductor units 1b and 1c and the output terminal sections 9b and 9c have the same configuration as the connection portion of the semiconductor unit 1a and the output terminal section 9a.

[0113] Other configurations of the semiconductor device according to the second embodiment are substantially the same as those of the semiconductor device according to the first embodiment, and therefore, redundant explanations will be omitted.

[0114] <Method for Manufacturing Semiconductor Device> An example of a method for manufacturing (assembling) the semiconductor device according to the second embodiment will be described with reference to Fig. 35. Fig. 35 is an exploded perspective view of the semiconductor device according to the second embodiment.

[0115] First, by transfer molding or the like, semiconductor units 1a to 1c are prepared, each of which includes sealing resins 10a to 10c, positive electrode portions 11a to 11c, negative electrode portions 12a to 12c, and output portions 13a to 13c protruding from the side surfaces of the sealing resins 10a to 10c, and control portions 14a to 14g exposed from the top surfaces of the sealing resins 10a to 10c. In addition, by transfer molding or the like, control terminal units 4a to 4c are prepared, which include control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) and a terminal holding unit 40 that holds the control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g).

[0116] Also, by transfer molding or the like, positive and negative electrode terminal units 8a to 8c are prepared, each including positive electrode terminals 101a to 101c and negative electrode terminals 102a to 102, and a holder 81 that holds the positive electrode terminals 101a to 101c and the negative electrode terminals 102a to 102. Also, by transfer molding or the like, output terminal units 9a to 9c are prepared, each including output terminals 103a to 103c and a holder 91 that holds the output terminals 103a to 103c.

[0117] Next, the upper surfaces of the positive electrode portion 11a and the negative electrode portion 12a of the semiconductor unit 1a are overlapped with the lower surfaces of the joint portion 111b of the positive electrode terminal 101a and the joint portion 112b of the negative electrode terminal 102a, which are exposed on the lower surface side of the positive and negative electrode terminal portion 8a, respectively, and joined by laser welding or the like from the lower surface side. Then, the spaces 84a to 84c on the lower surface sides of the positive electrode portion 11a and the negative electrode portion 12a of the semiconductor unit 1a are filled with insulating adhesive 7. The connection between the positive and negative electrode terminal portions 8b, 8c and the semiconductor units 1b, 1c is performed in a similar manner.

[0118] Next, the upper surface of output section 13a of semiconductor unit 1a is placed on the lower surface of joint section 113b of output terminal 103a exposed on the lower surface side of output terminal section 9a, and they are joined from the lower surface side by laser welding or the like. Then, insulating adhesive 7x is filled into space 94 on the lower surface side of output section 13a of semiconductor unit 1a. The connection between output terminal sections 9b and 9c and semiconductor units 1b and 1c is performed in the same manner.

[0119] Next, a component in which the semiconductor units 1a to 1c, the positive and negative electrode terminal portions 8a to 8c, and the output terminal portion 9a are integrated is placed on the upper surface side of the cooler 5 via the heat dissipation member 6. At this time, the upper surface of the cooler 5 and the positive electrode portions 11a to 11c, the negative electrode portions 12a to 12c, and the output portions 13a to 13c of the semiconductor units 1a to 1c are bonded with insulating adhesives 7, 7x to ensure an insulating distance.

[0120] Next, the control terminal portions 4a to 4c are arranged on the upper surface sides of the semiconductor units 1a to 1c. The control portions 14a to 14g of the semiconductor unit 1a are joined to the control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) of the control terminal portion 4a by laser welding or the like. The control portions of the semiconductor units 1b and 1c are also joined to the control terminals of the control terminal portions 4b and 4c by laser welding or the like. In this manner, the semiconductor device according to the second embodiment shown in FIGS. 20 to 24 is completed.

[0121] According to the semiconductor device of the second embodiment, control units 14a to 14g are provided on the upper surfaces of semiconductor units 1a to 1c, and control terminal units 4a to 4c are provided separately from semiconductor units 1a to 1c, each having control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) that are conductively connected to control units 14a to 14g. This allows for a variety of control terminals (41a, 42a), (41b, 42b), (41c, 42c), (41d, 42d), (41e, 42e), (41f, 42f), and (41g, 42g) while maintaining the transfer moldability of semiconductor units 1a to 1c. This allows for a variety of interface requirements to be met.

[0122] Furthermore, in the semiconductor device according to the second embodiment, instead of the positive and negative terminal cases 2a to 2c and the output terminal cases 3a to 3c used in the semiconductor device according to the first embodiment, positive and negative terminal sections 8a to 8c and output terminal sections 9a to 9c are provided. The positive and negative terminal sections 8a to 8c are conductively connected to the positive terminal sections 11a to 11c and the negative terminal sections 12a to 12c of the semiconductor units 1a to 1c, respectively, and the output terminal sections 9a to 9c are conductively connected to the output sections 13a to 13c of the semiconductor units 1a to 1c. This allows external components to be fastened to the positive terminals 101a to 101c, the negative terminals 102a to 102c, and the output terminals 103a to 103c with screws. This allows for a variety of interface requirements to be met without modifying the semiconductor units 1a to 1c.

[0123] Furthermore, according to the semiconductor device of the second embodiment, spaces 84a to 84c, 94 surrounded by the side surfaces of sealing resins 10a to 10c of semiconductor units 1a to 1c, the lower surfaces of positive electrode portions 11a to 11c, negative electrode portions 12a to 12c, and output portions 13a to 13c of semiconductor units 1a to 1c, and the upper surface of cooler 5 are filled with insulating adhesive 7 or the like, thereby ensuring an insulation distance between positive electrode portions 11a to 11c, negative electrode portions 12a to 12c, and output portions 13a to 13c and cooler 5. Furthermore, because the bonding area provided by insulating adhesive 7 is small, thermal stress during operation of the semiconductor device of the second embodiment and in the operating environment is small, and the occurrence of peeling of each component bonded by insulating adhesive 7 can be reduced.

[0124] Furthermore, in the semiconductor device according to the second embodiment, the positive electrode portions 11a to 11c, the negative electrode portions 12a to 12c, and the output portions 13a to 13c of the semiconductor units 1a to 1c are joined to the positive electrode terminals 101a to 101c, the negative electrode terminals 102a to 102c, and the output terminals 103a to 103c by laser welding from the underside outside the sealing resins 10a to 10c of the semiconductor units 1a to 1c. This allows the positive electrode terminals 101a to 101c, the negative electrode terminals 102a to 102c, and the output terminals 103a to 103c to be joined to the semiconductor units 1a to 1c without spattering during welding into the internal circuits of the semiconductor units 1a to 1c.

[0125] 36 is a bottom view of a semiconductor unit 1a, a positive and negative terminal portion 8a, and an output terminal portion 9a of a semiconductor device according to a modification of the second embodiment. The semiconductor device according to the modification of the second embodiment differs from the semiconductor device according to the second embodiment in that a pair of positive and negative terminal portions 11a and 12a of the semiconductor unit 1a are fastened (connected) to the positive and negative terminals 101a and 102a of the positive and negative terminal portion 8a by screws 11x and 12x, respectively, instead of being joined by laser welding, and the output portion 13a of the semiconductor unit 1a is fastened (connected) to the output terminal 103a of the output terminal portion 9a by a screw 13x, instead of being joined by laser welding. Other configurations of the semiconductor device according to the modification of the second embodiment are substantially similar to those of the semiconductor device according to the second embodiment, and therefore, redundant description will be omitted.

[0126] As described above, the present disclosure has been described with reference to the first and second embodiments, but the descriptions and drawings that form part of this disclosure should not be understood to limit the present disclosure. Various alternative embodiments, examples, and operating techniques will become apparent to those skilled in the art from this disclosure.

[0127] For example, in the first and second embodiments, the pairs of positive electrode portions 11a to 11c and negative electrode portions 12a to 12c of the semiconductor units 1a to 1c may be configured in reverse. That is, the semiconductor units 1a to 1c may each include a pair of negative electrode portions and one positive electrode portion sandwiched between the pair of negative electrode portions. Furthermore, in the second embodiment, the positive electrode terminals 101a to 101c and negative electrode terminals 102a to 102c held by the positive and negative electrode terminal portions 8a to 8c may be configured in reverse.

[0128] Furthermore, the configurations disclosed in the first and second embodiments can be appropriately combined within a range that does not cause contradictions. As such, the present disclosure naturally includes various embodiments not described here. Therefore, the technical scope of the present disclosure is defined only by the invention-specifying matters according to the scope of the claims that are appropriate from the above description.

[0129] DESCRIPTION OF SYMBOLS 1a to 1c: Semiconductor unit 2a to 2c: Positive and negative terminal cases 2d, 2e: Connections 3a to 3c: Output terminal cases 3d, 3e: Connections 4a to 4c: Control terminals 5: Cooler 5a: Cooling fin 6: Heat dissipation member 7, 7x: Insulating adhesive 7a, 7b: Insulating sheet 8a to 8c: Positive and negative terminals 8x, 8y: Protrusions 9a to 9c: Output terminals 9x, 9y: Protrusions 10a to 10c: Sealing resin 11a to 11c: Positive electrode portion 11x, 12x, 13x: Screws 12a to 12c: Negative electrode portion 13a to 13c: Output portion 14a to 14g: Control unit 15: Metal plate 16: Insulating layer 17a, 17b: Conductive layer 18: Bonding material 19: Semiconductor chip DESCRIPTION OF SYMBOLS 20... Wiring board (printed circuit board) 20a, 20b... Connection member (pin) 21... Bottom plate 22a to 22d... Wall 23a, 23b... Protrusion 24... Protruding portion 25... Tapered portion 31... Bottom plate 32a to 32d... Wall 40... Terminal holding portion 40a, 40b... Opening 40c... Hole 40d... Protrusion 41a to 41g... Joint portion 41x, 42x... Hole 42a to 42g... Terminal portion 43a, 43b... Intermediate portion 51x, 51y... Recess 52x, 52y... Hole 81... Holding portion 81x... Hole 82... Wall 83a to 83g... Wall 84a to 84c... Space (recess) 85a, 85b... Protrusion 91... Holding portion 92a to 92c... Protrusion 93a to 93c...walls 94...space (recess) 101a to 101c...positive electrode terminals 102a to 102c...negative electrode terminals 103a to 103c...output terminals 111a...terminal portion 111b...joint portion 111c...intermediate portion 111x...fastening hole 112a...terminal portion 112b...joint portion 112c...intermediate portion 112x...fastening hole 113a...terminal portion 113b...joint portion 113x...fastening hole 141a, 141b...pads 142a, 142b...pins

Claims

1. A semiconductor device comprising: a sealing resin that seals a semiconductor chip; a semiconductor unit having positive and negative electrode portions extending from one side of the sealing resin, an output portion extending from the other side opposite the one side, and a plurality of control portions exposed from the sealing resin; a first resin member arranged opposite the one side and having an insulating first wall arranged between the positive and negative electrode portions; a second resin member arranged opposite the other side; and a third resin member that holds a plurality of control terminals that are respectively joined to each of the control portions.

2. The semiconductor device according to claim 1, further comprising a cooler arranged on the underside of the semiconductor unit, covering at least the areas of the upper surface of the cooler facing the positive electrode section, the negative electrode section and the output section in a plan view, and further comprising an insulating sheet extending onto the underside of the outer edge of the semiconductor unit, the underside of the first resin member and the underside of the second resin member.

3. The semiconductor device according to claim 1 or 2, wherein the third resin member is disposed on the semiconductor unit and engages with the first resin member and the second resin member.

4. The semiconductor device according to claim 1 or 2, wherein one end of the control terminal extends in a lateral direction of the third resin member.

5. The semiconductor device according to claim 1 or 2, wherein one of the positive electrode portion or the negative electrode portion of the semiconductor unit is wider than the other in a direction perpendicular to the extension direction of the positive electrode portion and the negative electrode portion, the width of the output portion of the semiconductor unit in a direction perpendicular to the extension direction of the output portion is the same as the width of one of the positive electrode portion or the negative electrode portion, and the second resin member has the same shape as the first resin member.

6. The semiconductor device according to claim 1 or 2, wherein the semiconductor unit has a plurality of the positive electrode portions, and further comprises: a positive electrode terminal held by the first resin member, having a fastening hole, and having a plurality of joints connected to the positive electrode portions; and a negative electrode terminal held by the first resin member, having a fastening hole, and having a joint connected to the negative electrode portion, and wherein the first resin member has a second wall separating the positive electrode terminal and the negative electrode terminal.

7. The semiconductor device according to claim 1 or 2, further comprising an output terminal held by the second resin member, having a fastening hole, and connected to the output section.

8. The semiconductor device according to claim 1 or 2, wherein the control unit includes a pin protruding from the upper surface of the sealing resin.

9. The semiconductor device according to claim 1 or 2, wherein the control section includes a pad that is flush with the upper surface of the sealing resin.

10. The semiconductor device according to claim 2, comprising a plurality of the semiconductor units arranged on the cooler, the first resin member corresponding to each of the semiconductor units being integrally formed, and the second resin member corresponding to each of the semiconductor units being integrally formed.

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