Light detection device

Abstract

A first light detection device according to an embodiment of the present disclosure comprises: a first pixel and a second pixel that generate signals for phase difference detection, the first and second pixels being arranged in parallel; a photoelectric conversion layer that is provided across the first pixel and the second pixel; and an opening that removes at least a portion of the photoelectric conversion layer between the first pixel and the second pixel.

Description

Photodetector

[0001] The present disclosure relates to a light detection device.

[0002] For example, Patent Document 1 discloses a solid-state imaging device that aims to easily arrange phase difference detection pixels in a predetermined region or over the entire surface of a pixel region. In this solid-state imaging device, a first storage electrode and a second storage electrode that store charges in the charge transfer layer are provided as lower electrodes that are arranged opposite to the photoelectric conversion layer with the charge transfer layer in between, and further, a first control electrode that transfers one of the charges stored by the first storage electrode and the second storage electrode is provided between the first storage electrode and the second storage electrode.

[0003] WO 2023 / 248618

[0004] Incidentally, there is a demand for improved light detection characteristics in light detection devices.

[0005] It is desirable to provide a photodetector device that can improve the photodetection characteristics.

[0006] A first photodetector according to one embodiment of the present disclosure includes a first pixel and a second pixel arranged in parallel to generate a signal for detecting a phase difference, a photoelectric conversion layer provided across the first pixel and the second pixel, and an opening for removing at least a portion of the photoelectric conversion layer between the first pixel and the second pixel.

[0007] In a first photodetector according to an embodiment of the present disclosure, an opening is provided between the first pixel and the second pixel, which are arranged in parallel and generate a signal for detecting a phase difference, to remove at least a part of the photodetection characteristic provided across the first pixel and the second pixel, thereby preventing variation in sensitivity due to variation in distribution of electric charges generated between the first pixel and the second pixel to the first pixel and the second pixel.

[0008] A second photodetector according to one embodiment of the present disclosure includes a plurality of pixels, a first electrode provided in each of the plurality of pixels, a second electrode arranged opposite the first electrode and provided in each of the plurality of pixels or across the plurality of pixels, a photoelectric conversion layer arranged between the first electrode and the second electrode and provided across the plurality of pixels, an opening that removes at least a portion of the photoelectric conversion layer between adjacent pixels, and a charge storage layer that is provided between the first electrode and the photoelectric conversion layer, is provided across the plurality of pixels, and is capable of storing charges generated by photoelectric conversion.

[0009] In a second photodetector according to an embodiment of the present disclosure, a first electrode, a charge storage layer, a photoelectric conversion layer, and a second electrode are stacked in this order, and an opening is provided between adjacent pixels in the photoelectric conversion layer that spans a plurality of pixels, by removing at least a portion of the photoelectric conversion layer, and the charge storage layer is continuous across the plurality of pixels, thereby preventing variations in sensitivity due to variations in distribution of charges generated between adjacent pixels.

[0010] FIG. 1 is a schematic plan view and a schematic cross-sectional view illustrating an example of a layout of a unit pixel of a photodetector according to a first embodiment of the present disclosure. FIG. 2 is a block diagram illustrating the overall configuration of the photodetector shown in FIG. 1. FIG. 3 is a schematic cross-sectional view illustrating an example of a detailed configuration of the unit pixel shown in FIG. 1. FIG. 4 is an equivalent circuit diagram of a unit pixel of the photodetector shown in FIG. 1, etc. FIG. 5 is a cross-sectional view for explaining a method of manufacturing the photodetector shown in FIG. 3. FIG. 6 is a cross-sectional view illustrating a process subsequent to FIG. 5. FIG. 7 is a cross-sectional view illustrating a process subsequent to FIG. 6. FIG. 8 is a cross-sectional view illustrating a process subsequent to FIG. 7. FIG. 9 is a cross-sectional view illustrating a process subsequent to FIG. 8. FIG. 10 is a cross-sectional view illustrating a process subsequent to FIG. 9. FIG. 11 is an energy potential diagram illustrating the unit pixel shown in FIG. 1 during non-saturated accumulation. FIG. 12 is an energy potential diagram illustrating the unit pixel shown in FIG. 1 at the start of transfer. FIG. 13 is an energy potential diagram illustrating the unit pixel shown in FIG. 1 during transfer. FIG. 14 is an energy potential diagram illustrating the unit pixel shown in FIG. 1 at the end of transfer. FIG. 15 is a timing chart showing an example of the relationship between time and a voltage supplied to the unit pixel shown in FIG. 1 . FIG. 16 is a timing chart showing another example of the relationship between time and a voltage supplied to the unit pixel shown in FIG. 1 . FIG. 17 is a schematic plan view and a schematic cross-sectional view showing another example of the layout of a unit pixel of a photodetector according to the first embodiment of the present disclosure. FIG. 18 is a schematic cross-sectional view showing an example of the layout of a unit pixel of a photodetector according to Modification 1 of the present disclosure. FIG. 19 is a schematic cross-sectional view showing another example of the layout of a unit pixel of a photodetector according to Modification 1 of the present disclosure. FIG. 20 is a schematic cross-sectional view showing another example of the layout of a unit pixel of a photodetector according to Modification 1 of the present disclosure. FIG. 21 is a schematic cross-sectional view showing another example of the layout of a unit pixel of a photodetector according to Modification 1 of the present disclosure. FIG. 22 is a schematic cross-sectional view showing another example of the layout of a unit pixel of a photodetector according to Modification 1 of the present disclosure. FIG. 23 is a schematic cross-sectional view showing another example of the layout of a unit pixel of a photodetector according to Modification 1 of the present disclosure. Fig. 24 is a schematic cross-sectional view illustrating another example of the layout of a unit pixel of a photodetector according to Modification 1 of the present disclosure. Fig. 25 is a schematic cross-sectional view illustrating another example of the layout of a unit pixel of a photodetector according to Modification 1 of the present disclosure.FIG. 26 is a planar schematic diagram showing an example of the layout of a unit pixel of a photodetector according to Modification 2 of the present disclosure. FIG. 27 is an energy potential diagram of the unit pixel shown in FIG. 26 during non-saturated accumulation. FIG. 28 is an energy potential diagram of the unit pixel shown in FIG. 26 at the start of transfer. FIG. 29 is an energy potential diagram of the unit pixel shown in FIG. 26 during transfer. FIG. 30 is an energy potential diagram of the unit pixel shown in FIG. 26 at the end of transfer. FIG. 31 is a timing chart showing an example of the relationship between time and voltage supplied to the unit pixel shown in FIG. 26. FIG. 32 is a timing chart showing another example of the relationship between time and voltage supplied to the unit pixel shown in FIG. 27. FIG. 33 is a planar schematic diagram showing an example of the layout of a unit pixel of a photodetector according to Modification 3 of the present disclosure. FIG. 34 is a planar schematic diagram showing an example of the layout of a unit pixel of a photodetector according to Modification 4 of the present disclosure. FIG. 35 is a planar schematic diagram showing an example of the layout of a unit pixel of a photodetector according to Modification 5 of the present disclosure. FIG. 36 is a planar schematic diagram illustrating an example of the layout of a unit pixel of a photodetector according to Modification 6 of the present disclosure. FIG. 37A is a cross-sectional schematic diagram illustrating an example of the configuration of a photodetector according to a second embodiment of the present disclosure. FIG. 37B is a schematic diagram illustrating the planar configuration of the photodetector shown in FIG. 37A. FIG. 38 is a schematic diagram illustrating the planar configuration of a photodetector according to Modification 7 of the present disclosure. FIG. 39 is a schematic diagram illustrating the planar configuration of a photodetector according to Modification 8 of the present disclosure. FIG. 40 is a schematic diagram illustrating the planar configuration of a photodetector according to Modification 9 of the present disclosure. FIG. 41A is a cross-sectional schematic diagram illustrating an example of the configuration of a photodetector according to Modification 10 of the present disclosure. FIG. 41B is a schematic diagram illustrating the planar configuration of the photodetector shown in FIG. 41A. FIG. 42A is a cross-sectional schematic diagram illustrating an example of the configuration of a photodetector according to a third embodiment of the present disclosure. FIG. 42B is a schematic diagram illustrating the planar configuration of the photodetector shown in FIG. 42A. FIG. 43 is a schematic diagram illustrating the planar configuration of a photodetector according to Modification 11 of the present disclosure. Fig. 44A is a cross-sectional schematic diagram illustrating an example of a configuration of a photodetector according to Modification 12 of the present disclosure. Fig. 44B is a schematic diagram illustrating a planar configuration of the photodetector shown in Fig. 44A. Fig. 45A is a cross-sectional schematic diagram illustrating an example of a configuration of a photodetector according to a fourth embodiment of the present disclosure.FIG. 45B is a schematic diagram illustrating a planar configuration of the photodetector shown in FIG. 45A. FIG. 43 is a schematic diagram illustrating a planar configuration of a photodetector according to Modification 13 of the present disclosure. FIG. 47A is a cross-sectional schematic diagram illustrating an example of the configuration of a photodetector according to Modification 14 of the present disclosure. FIG. 47B is a schematic diagram illustrating the planar configuration of the photodetector shown in FIG. 47A. FIG. 48A is a cross-sectional schematic diagram illustrating an example of the configuration of a photodetector according to Modification 15 of the present disclosure. FIG. 48B is a schematic diagram illustrating the planar configuration of the photodetector shown in FIG. 48A. FIG. 49 is a schematic diagram illustrating an example of the cross-sectional configuration of a photodetector according to another modification of the present disclosure. FIG. 50 is a schematic diagram illustrating another example of the cross-sectional configuration of a photodetector according to another modification of the present disclosure. FIG. 51 is a block diagram illustrating an example of the configuration of an electronic device using the photodetector shown in FIG. 2. FIG. 52A is a schematic diagram illustrating an example of the overall configuration of a photodetection system using the photodetector shown in FIG. 2. FIG. 52B is a diagram illustrating an example of the circuit configuration of the photodetection system shown in FIG. 52A. Fig. 53 is a diagram showing an example of a schematic configuration of an endoscopic surgery system. Fig. 54 is a block diagram showing an example of a functional configuration of a camera head and a CCU. Fig. 55 is a block diagram showing an example of a schematic configuration of a vehicle control system. Fig. 56 is an explanatory diagram showing an example of installation positions of an outside-vehicle information detection unit and an imaging unit.

[0011] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The following description is a specific example of the present disclosure, and the present disclosure is not limited to the following aspects. Furthermore, the present disclosure is not limited to the arrangement, dimensions, dimensional ratios, etc. of the components shown in the drawings. The description will be given in the following order: 1. First Embodiment (Example of a Photodetector Having an Opening Between Phase Difference Detection Pixels in a Photoelectric Conversion Layer) 2. Modifications 2-1. Modification 1 (Another Example of a Photodetector Configuration) 2-2. Modification 2 (Another Example of a Photodetector Configuration) 2-3. Modification 3 (Another Example of a Photodetector Configuration) 2-4. Modification 4 (Another Example of a Photodetector Configuration) 2-5. Modification 5 (Another Example of a Photodetector Configuration) 2-6. Modification 6 (Another Example of a Photodetector Configuration) 3. Second Embodiment (Another Example of a Photodetector Having an Opening Between Adjacent Pixels in a Photoelectric Conversion Layer) 4. Modifications 4-1. Modification 7 (Another Example of a Photodetector Configuration) 4-2. 4. Modification 8 (Another Example of the Configuration of the Photodetector) 4-3. Modification 9 (Another Example of the Configuration of the Photodetector) 4-4. Modification 10 (Another Example of the Configuration of the Photodetector) 5. Third Embodiment (Another Example of the Photodetector Having an Opening Between Adjacent Pixels in the Photoelectric Conversion Layer) 6. Modifications 5-1. Modification 11 (Another Example of the Configuration of the Photodetector) 5-2. Modification 12 (Another Example of the Configuration of the Photodetector) 7. Fourth Embodiment (Example of the Photodetector in Which the Area of ​​the Lower Electrode is Different Between Adjacent Pixels) 8. Modifications 7-1. Modification 13 (Another Example of the Configuration of the Photodetector) 7-2. Modification 14 (Another Example of the Configuration of the Photodetector) 7-3. Modification 15 (Another Example of the Configuration of the Photodetector) 9. Other Modifications 10. Application Examples 11. Application Examples

[0012] 1. First Embodiment Fig. 1 schematically illustrates an example of a planar configuration (A) and a cross-sectional configuration (B) of the layout of a unit pixel 10 of a photodetector (photodetector 1) according to a first embodiment of the present disclosure. Note that Fig. 1B illustrates a cross section corresponding to line II shown in Fig. 1A. Fig. 2 illustrates an example of the overall configuration of the photodetector 1. The photodetector 1 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor used in electronic devices such as digital still cameras and video cameras.

[0013] The photodetector 1 of this embodiment has a plurality of unit pixels 10. Each unit pixel 10 has phase difference detection pixels 10A and 10B arranged in parallel and generating signals for phase difference detection. Each unit pixel 10 further has a photoelectric conversion layer 24, and an opening 26 for removing the photoelectric conversion layer 24 is provided between the phase difference detection pixel 10A and the phase difference detection pixel 10B.

[0014] Here, the phase difference detection pixels 10A and 10B correspond to a specific example of a "first pixel" and a "second pixel" according to an embodiment of the present disclosure. The photoelectric conversion layer 24 corresponds to a specific example of a "photoelectric conversion layer" according to an embodiment of the present disclosure. The opening 26 corresponds to a specific example of an "opening" according to an embodiment of the present disclosure.

[0015] [Overall configuration of the photodetector]

[0016] The photodetector 1 is, for example, a CMOS image sensor that captures incident light (image light) from a subject via an optical lens system (not shown), converts the amount of incident light imaged on an imaging surface into an electrical signal on a pixel-by-pixel basis, and outputs the electrical signal as a pixel signal. The photodetector 1 has a pixel section 100A as an imaging area on a semiconductor substrate 30, and also has, in a peripheral region of the pixel section 100A, for example, a vertical drive circuit 111, a column signal processing circuit 112, a horizontal drive circuit 113, an output circuit 114, a control circuit 115, and an input / output terminal 116.

[0017] The pixel section 100A has, for example, a plurality of unit pixels P arranged two-dimensionally in a matrix. The unit pixels P are wired, for example, with pixel drive lines Lread (specifically, row selection lines and reset control lines) for each pixel row, and with vertical signal lines Lsig for each pixel column. The pixel drive lines Lread transmit drive signals for reading signals from the pixels. One end of each pixel drive line Lread is connected to an output terminal of the vertical drive circuit 111 corresponding to each row.

[0018] The vertical drive circuit 111 is a pixel drive unit that includes a shift register, an address decoder, etc., and drives each unit pixel P of the pixel unit 100A, for example, row by row. Signals output from each unit pixel P of a pixel row selected and scanned by the vertical drive circuit 111 are supplied to a column signal processing circuit 112 through each vertical signal line Lsig. The column signal processing circuit 112 is configured with an amplifier, a horizontal selection switch, etc., provided for each vertical signal line Lsig.

[0019] The horizontal drive circuit 113 is configured with a shift register, an address decoder, etc., and scans and sequentially drives each horizontal selection switch of the column signal processing circuit 112. By selective scanning by this horizontal drive circuit 113, signals of each pixel transmitted through each vertical signal line Lsig are output in sequence to horizontal signal lines 121 and transmitted to the outside of the semiconductor substrate 30 through the horizontal signal lines 121.

[0020] The output circuit 114 processes and outputs signals sequentially supplied from each of the column signal processing circuits 112 via the horizontal signal line 121. The output circuit 114 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like, for example.

[0021] The circuit portion consisting of the vertical drive circuit 111, the column signal processing circuit 112, the horizontal drive circuit 113, the horizontal signal line 121, and the output circuit 114 may be formed directly on the semiconductor substrate 30, or may be disposed on an external control IC. Furthermore, these circuit portions may be formed on another substrate connected by a cable or the like.

[0022] The control circuit 115 receives a clock and data instructing an operation mode from outside the semiconductor substrate 30, and outputs data such as internal information of the photodetector 1. The control circuit 115 further has a timing generator that generates various timing signals, and controls the driving of peripheral circuits such as the vertical drive circuit 111, the column signal processing circuit 112, and the horizontal drive circuit 113 based on the various timing signals generated by the timing generator.

[0023] The input / output terminal 116 is used to exchange signals with the outside.

[0024] [Configuration of Unit Pixel] FIG. 3 is a schematic diagram illustrating an example of a detailed cross-sectional configuration of a unit pixel of the photodetector 1. Note that FIG. 3 illustrates a cross section corresponding to line II-II in FIG. 1A. The photodetector 1 is a stacked-type photodetector in which, for example, one photoelectric conversion unit 20 and one photoelectric conversion region 32 are stacked. The photoelectric conversion unit 20 is provided on the back surface (first surface 30A) of the semiconductor substrate 30. The photoelectric conversion region 32 is embedded within the semiconductor substrate 30. A protective layer 51 is provided above the photoelectric conversion unit 20. The protective layer 51 includes, for example, a light-shielding film 53 and wiring 54 that electrically connects the upper electrode 25 and the peripheral circuitry around the pixel unit 100A. Optical components such as a planarization layer (not shown) and an on-chip lens 52 are further provided above the protective layer 51.

[0025] In FIG. 3, the first surface 30A side of the semiconductor substrate 30 is represented as a light incident side S1, and the second surface 30B side is represented as a wiring layer side S2.

[0026] In this embodiment, the case where electrons of pairs of electrons and holes (excitons) generated by photoelectric conversion are read out as signal charges (when an n-type semiconductor region is used as the photoelectric conversion layer) will be described, but this is not limitative. Also, in the figures, the "+ (plus)" attached to "p" and "n" indicates that the p-type or n-type impurity concentration is high.

[0027] The photoelectric conversion unit 20 and the photoelectric conversion region 32 selectively detect light in different wavelength ranges and perform photoelectric conversion. For example, the photoelectric conversion unit 20 acquires a signal of light (visible light) with a wavelength in the visible range (e.g., 400 nm or more and less than 750 nm). The photoelectric conversion region 32 acquires a signal of light (infrared light (IR)) in the infrared range (e.g., 750 nm or more and 1300 nm or less).

[0028] The structure and materials of each part will be described in detail below.

[0029] The photoelectric conversion unit 20 is an organic photoelectric conversion element that absorbs light in, for example, part or all of the wavelength range of the visible region to generate excitons. The photoelectric conversion unit 20 includes a lower electrode 21, an insulating layer 22, a charge storage layer 23, a photoelectric conversion layer 24, and an upper electrode 25 stacked in this order from the semiconductor substrate 30 side. The photoelectric conversion layer 24 has an opening 26 that removes a portion of the photoelectric conversion layer 24.

[0030] In the photoelectric conversion unit 20, light incident on the light incident side S1 is absorbed by the photoelectric conversion layer 24. The excitons thus generated move to the interface between the electron donors and electron acceptors that make up the photoelectric conversion layer 24, where they undergo exciton dissociation, i.e., dissociation into electrons and holes. The charges (electrons and holes) generated here are transported to different electrodes by diffusion due to a difference in charge concentration and an internal electric field due to a difference in work function between the anode (e.g., the upper electrode 25) and the cathode (e.g., the lower electrode 21), and are detected as photocurrent. The transport direction of the electrons and holes can also be controlled by applying a potential between the lower electrode 21 and the upper electrode 25.

[0031] The lower electrode 21 includes, for example, a readout electrode 211 , storage electrodes 212 A and 212 B, a shield electrode 213 , a control electrode 214 , and an overflow barrier (OFB) electrode 215 .

[0032] The readout electrode 211 corresponds to a specific example of a "third electrode" according to an embodiment of the present disclosure. The readout electrode 211 is used to transfer, for example, electrons as signal charges among the charges generated in the photoelectric conversion layer 24, to a floating diffusion FD1 (described later). The readout electrode 211 is disposed between and shared by two unit pixels 10 aligned in the Y-axis direction, as shown in FIG. 1A, for example.

[0033] The storage electrodes 212A and 212B correspond to a specific example of a "first electrode" according to an embodiment of the present disclosure. The storage electrodes 212A and 212B are used to store, for example, electrons as signal charges among charges generated in the photoelectric conversion layer 24 in the charge storage layer 23. The storage electrodes 212A and 212B are arranged in parallel and spaced apart in the X-axis direction within the unit pixel 10, and respectively constitute the phase difference detection pixels 10A and 10B. That is, the phase difference detection pixels 10A and 10B are arranged over the entire surface of the pixel section 100A.

[0034] Note that all of the unit pixels P two-dimensionally arranged in a matrix that constitutes the pixel section 100A may be configured with the unit pixels 10 as described above, or some of the unit pixels P may be configured with the unit pixels 10. Specifically, the unit pixels 10 as the phase difference detection pixels 10A and 10B may be arranged, for example, on at least a part of the left and right sides in the X-axis direction and the upper and lower sides in the Y-axis direction of the pixel section 100A.

[0035] The shield electrodes 213 are intended to prevent capacitive coupling between adjacent unit pixels 10, and a fixed potential is applied to them. The shield electrodes 213 are disposed, for example, between adjacent pixels in the row direction (Y-axis direction) and column direction (X-axis direction). In other words, the shield electrodes 213 are formed, for example, in a lattice pattern in a plan view. Specifically, as shown in FIG. 1A , among the shield electrodes 213 extending in the X-axis direction and the Y-axis direction, the shield electrodes 213 extending in the X-axis direction are disposed at regular intervals every other row. Readout electrodes 211 are disposed between the spaced-apart shield electrodes 213.

[0036] A variable voltage is applied to the control electrode 214, which controls the energy potential of the charge storage layer 23. The control electrode 214 is disposed between the storage electrodes 212A and 212B. This allows selective transfer of one of the charges stored in the charge storage layer 23 above by the storage electrode 212A and the charges stored in the charge storage layer 23 above by the storage electrode 212B to the other.

[0037] The OFB electrode 215 is for preventing the flow of charges stored in the charge storage layer 23 above it by the storage electrode 212A to the readout electrode 211, and a variable voltage is applied to it, similar to the control electrode 214.

[0038] The readout electrode 211, storage electrodes 212A and 212B, shield electrode 213, control electrode 214, and OFB electrode 215 that constitute the lower electrode 21 are each formed in the same conductive layer and made of the same conductive material.

[0039] The lower electrode 21 is made of, for example, a conductive film having optical transparency. The lower electrode 21 preferably has a work function of, for example, 4.0 eV or more and 5.5 eV or less. The constituent material of such a lower electrode 21 is, for example, InP doped with tin (Sn). ２ O ３ The ITO film may have high or low crystallinity (close to amorphous). In addition to the above, the lower electrode 21 may also be made of tin oxide (SnO ２)-based materials, for example, ATO with antimony (Sb) added as a dopant, and FTO with fluorine (F) added as a dopant can be used. Zinc oxide (ZnO) or a zinc oxide-based material with a dopant added can also be used. ZnO-based materials, for example, include aluminum zinc oxide (AZO) with aluminum (Al) added as a dopant, gallium zinc oxide (GZO) with gallium (Ga) added, boron zinc oxide with boron (B) added, and indium zinc oxide (IZO) with indium (In) added. Furthermore, zinc oxide with indium and gallium added as dopants (IGZO, In-GaZnO ４ The lower electrode 21 may be made of CuI, InSbO ４ , ZnMgO, CuInO ２ , MgIN ２ O ４ , CdO, ZnSnO ３ or TiO ２ Alternatively, spinel oxides or YbFe ２ O ４ Oxides having such a structure may also be used.

[0040] When the lower electrode 21 does not need to be optically transparent (for example, when light is incident from the upper electrode 25 side and the photoelectric conversion regions 32R and 32B are not provided below the storage electrode 212), a single metal or alloy having a small work function (for example, φ=3.5 eV to 4.5 eV) can be used. Specific examples include alkali metals (for example, lithium (Li), sodium (Na), and potassium (K)) and their fluorides or oxides, and alkaline earth metals (for example, magnesium (Mg) and calcium (Ca)) and their fluorides or oxides. Other examples include rare earth metals such as aluminum (Al), Al—Si—Cu alloys, zinc (Zn), tin (Sn), thallium (Tl), Na—K alloys, Al—Li alloys, Mg—Ag alloys, In, and ytterbium (Yb), or alloys thereof.

[0041] Examples of materials that can be used to form the lower electrode 21 include metals such as platinum (Pt), gold (Au), palladium (Pd), chromium (Cr), nickel (Ni), aluminum (Al), silver (Ag), tantalum (Ta), tungsten (W), copper (Cu), titanium (Ti), indium (In), tin (Sn), iron (Fe), cobalt (Co), and molybdenum (Mo), alloys containing these metal elements, conductive particles made of these metals, conductive particles of alloys containing these metals, polysilicon containing impurities, carbon-based materials, oxide semiconductors, carbon nanotubes, and graphene. Other examples of materials that can be used to form the lower electrode 21 include organic materials (conductive polymers) such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonate (PEDOT / PSS). Alternatively, the above materials can be mixed with a binder (polymer) to form a paste or ink, which can then be cured and used as an electrode.

[0042] The lower electrode 21 can be formed as a single layer or a laminated film made of the above materials. The film thickness of the lower electrode 21 in the lamination direction (hereinafter simply referred to as thickness) is, for example, 10 nm to 100 nm.

[0043] The insulating layer 22 serves to electrically separate the lower electrode 21 from the charge storage layer 23. The insulating layer 22 is provided so as to cover the lower electrode 21. An opening 22H is provided in the insulating layer 22 above the readout electrode 211 of the lower electrode 21, and the readout electrode 211 and the charge storage layer 23 are electrically connected via this opening 22H. The insulating layer 22 is made of, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ The insulating layer 22 is composed of a single layer film made of one of silicon oxynitride (SiON) and silicon oxynitride (SiON), or a laminated film made of two or more of these materials. The thickness of the insulating layer 22 is, for example, 20 nm to 500 nm.

[0044] The charge storage layer 23 is for storing charges generated in the photoelectric conversion layer 24. The charge storage layer 23 can be formed using, for example, an oxide semiconductor containing at least one element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), and tin (Sn). When electrons among the charges generated in the photoelectric conversion layer 24 are used as signal charges, the charge storage layer 23 can be formed using an n-type oxide semiconductor material. When holes among the charges generated in the photoelectric conversion layer 24 are used as signal charges, the charge storage layer 23 can be formed using a p-type oxide semiconductor material. When electrons are used as signal charges, the charge storage layer 23 can be formed using, for example, IGZO (In—Ga—Zn—O-based oxide semiconductor), gallium oxide (Ga ２ O ３ ), ZTO (Zn—Sn—O based oxide semiconductor), IZO (In—Zn—O based oxide semiconductor), ITO, indium gallium aluminum oxide (InGaAlO), and indium gallium silicon oxide (InGaSiO). The thickness of the charge storage layer 23 is, for example, 10 nm or more and 300 nm or less.

[0045] The photoelectric conversion layer 24 converts light energy into electrical energy. The photoelectric conversion layer 24 is configured, for example, by including two or more organic materials (p-type semiconductor materials or n-type semiconductor materials) that function as p-type semiconductors or n-type semiconductors, respectively. The p-type semiconductor functions relatively as an electron donor, and the n-type semiconductor functions relatively as an electron acceptor. The photoelectric conversion layer 24 provides a field where excitons generated upon light absorption separate into electrons and holes. Specifically, the excitons separate into electrons and holes at the interface (p / n junction) between the electron donor and electron acceptor.

[0046] The photoelectric conversion layer 24 is configured, for example, as a stacked structure of p-type semiconductors and n-type semiconductors, or a mixture of p-type semiconductors and n-type semiconductors (bulk heterostructure). A bulk heterojunction has a p / n junction surface formed by mixing p-type semiconductors and n-type semiconductors within a layer. Examples of stacked structures include a stacked structure of a mixture of p-type semiconductors, p-type semiconductors, and n-type semiconductors (bulk heterostructure) and an n-type semiconductor, a stacked structure of a mixture of p-type semiconductors, p-type semiconductors, and n-type semiconductors (bulk heterostructure), and a stacked structure of a mixture of n-type semiconductors, p-type semiconductors, and n-type semiconductors (bulk heterostructure). The stacking order of the stacked structures can be changed as appropriate.

[0047] In addition to the p-type and n-type semiconductor materials, the photoelectric conversion layer 24 may also contain an organic material, a so-called dye material, that photoelectrically converts light in a predetermined wavelength range while transmitting light in other wavelength ranges. When the photoelectric conversion layer 24 is formed using three types of organic materials, i.e., a p-type semiconductor material, an n-type semiconductor material, and a dye material, the p-type and n-type semiconductor materials are preferably materials that are optically transparent in the visible range. The thickness of the photoelectric conversion layer 24 is, for example, 50 nm or more and 500 nm or less.

[0048] Examples of organic materials that can be used to form the photoelectric conversion layer 24 include quinacridone derivatives, naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, and fluoranthene derivatives. The photoelectric conversion layer 24 is formed by combining two or more of the above organic materials. Depending on the combination, the above organic materials function as p-type or n-type semiconductors.

[0049] The organic material constituting the photoelectric conversion layer 24 is not limited to the above organic materials. Examples of the organic material constituting the photoelectric conversion layer 24 include polymers of phenylene vinylene, fluorene, carbazole, indole, pyrene, pyrrole, picoline, thiophene, acetylene, and diacetylene, and derivatives thereof. Examples of organic materials constituting the photoelectric conversion layer 24 include metal complex dyes, cyanine dyes, merocyanine dyes, phenylxanthene dyes, triphenylmethane dyes, rhodacyanine dyes, xanthene dyes, macrocyclic azaannulene dyes, azulene dyes, naphthoquinone dyes, anthraquinone dyes, condensed polycyclic aromatic compounds such as pyrene, chain compounds in which aromatic rings or heterocyclic compounds are condensed, quinolines having a squarylium group and a croconite methine group as a bonding chain, benzothiazoles, benzoxazoles, and other nitrogen-containing heterocycles, or cyanine-like dyes bonded by a squarylium group and a croconite methine group. Metal complex dyes include dithiol metal complex dyes, metal phthalocyanine dyes, metal porphyrin dyes, and ruthenium complex dyes. Among these, ruthenium complex dyes are particularly preferred, but are not limited to these. However, the photoelectric conversion layer 24 may be formed using quantum dots or the like.

[0050] The upper electrode 25 corresponds to a specific example of a "second electrode" according to an embodiment of the present disclosure. The upper electrode 25 is made of, for example, a light-transmitting conductive film, similar to the lower electrode 21. The upper electrode 25 may be made of, for example, InP doped with Sn. ２ O ３ The crystallinity of the ITO film may be high or low (close to amorphous). In addition to the above, the upper electrode 25 may also be made of SnO ２Examples of the ZnO-based material include ATO with Sb added as a dopant and FTO with fluorine added as a dopant. ZnO or a zinc oxide-based material with a dopant added may also be used. Examples of the ZnO-based material include AZO with Al added as a dopant, GZO with Ga added, boron zinc oxide with B added, and IZO with In added. IGZO (In-GaZnO4) may also be used with indium and gallium added as dopants. Materials for the lower electrode 21 include CuI, InSbO ４ , ZnMgO, CuInO ２ , MgIN ２ O ４ , CdO, ZnSnO ３ or TiO ２ Alternatively, spinel oxides or YbFe ２ O ４ Oxides having such a structure may also be used.

[0051] Furthermore, if optical transparency is not required for the upper electrode 25, a single metal or alloy having a large work function (for example, φ=4.5 eV to 5.5 eV) can be used. Specific examples include Au, Ag, Cr, Ni, Pd, Pt, Fe, iridium (Ir), germanium (Ge), osmium (Os), rhenium (Re), tellurium (Te), and alloys thereof.

[0052] Furthermore, examples of materials for the upper electrode 25 include metals such as Pt, Au, Pd, Cr, Ni, Al, Ag, Ta, W, Cu, Ti, In, Sn, Fe, Co, and Mo, or alloys containing these metal elements, or conductive particles made of these metals, conductive particles of alloys containing these metals, polysilicon containing impurities, carbon-based materials, oxide semiconductors, carbon nanotubes, and graphene. Other examples of materials for the upper electrode 25 include organic materials (conductive polymers) such as PEDOT / PSS. Alternatively, the above materials may be mixed with a binder (polymer) to form a paste or ink, which may then be cured and used as an electrode.

[0053] The upper electrode 25 can be formed as a single layer or a laminated film made of the above materials. The thickness of the upper electrode 25 is, for example, 20 nm to 200 nm, preferably 30 nm to 150 nm.

[0054] The photoelectric conversion unit 20 may have other layers between the lower electrode 21 and the photoelectric conversion layer 24 and between the photoelectric conversion layer 24 and the upper electrode 25. For example, a hole blocking layer may be provided between the lower electrode 21 and the photoelectric conversion layer 24. The hole blocking layer prevents holes from moving from the lower electrode 21 to the photoelectric conversion layer 24 and efficiently transports electrons, among the charges generated in the photoelectric conversion layer 24, to the lower electrode 21. An electron blocking layer or a work function adjustment layer may be provided between the photoelectric conversion layer 24 and the upper electrode 25. The electron blocking layer prevents electrons from moving from the upper electrode 25 to the photoelectric conversion layer 24 and efficiently transports holes, among the charges generated in the photoelectric conversion layer 24, to the upper electrode 25. The work function adjustment layer has an electron affinity or work function greater than the work function of the upper electrode 25 and improves the electrical connection between the photoelectric conversion layer 24 and the upper electrode 25.

[0055] The opening 26 removes the photoelectric conversion layer 24, and is provided between the phase difference detection pixel 10A and the phase difference detection pixel 10B as described above. In other words, the opening 26 is provided so as to remove the photoelectric conversion layer 24 above the control electrode 214 and the OFB electrode 215, as shown in FIG. 1, for example. This prevents variation in sensitivity caused by variation in distribution of charges generated above the control electrode 214 between the phase difference detection pixel 10A and the phase difference detection pixel 10B in the plurality of unit pixels 10 arranged in the pixel section 100A.

[0056] 1B , for example. In other words, the side surface 24S1 of the photoelectric conversion layer 24 formed by the opening 26 has a light incident side that is inclined toward the inside of the opening 26. This suppresses a decrease in sensitivity due to removal of a part of the photoelectric conversion layer 24 while suppressing a variation in sensitivity caused by a variation in the distribution of charges generated above the control electrode 214 between the phase difference detection pixel 10A and the phase difference detection pixel 10B.

[0057] An insulating film 261 is buried in the opening 26. The insulating film 261 is preferably made of a material that is optically transparent in the visible region and has a refractive index close to that of the photoelectric conversion layer 24. Specifically, the insulating film 261 preferably has a refractive index of, for example, 1.5 or more and 2.5 or less, and more preferably 1.8 or more and 2.2 or less. This suppresses reflection at the interface between the photoelectric conversion layer 24 and the opening 26. Examples of materials that can be used for the insulating film 261 include tantalum oxide (TaO), silicon nitride (SiN), silicon oxynitride (SiON), titanium oxide (TiO), titanium silicide oxide (TiSiO), and hafnium oxide (HfO).

[0058] The semiconductor substrate 30 is, for example, an n-type silicon (Si) substrate and has a p-well 31 in a predetermined region. The surface (second surface 30B) of the semiconductor substrate 30 is provided with, for example, floating diffusions FD1 (region 36B within the semiconductor substrate 30) and FD2 (region 37C within the semiconductor substrate 30), a transfer transistor Tr2, an amplifier transistor (modulation element) AMP, a reset transistor RST, and a selection transistor SEL. The second surface 30B of the semiconductor substrate 30 is further provided with a multilayer wiring layer 40 via a gate insulating layer 33. The multilayer wiring layer 40 has, for example, wiring layers 41, 42, and 43 stacked within an insulating layer 44. A vertical drive circuit 111, a column signal processing circuit 112, a horizontal drive circuit 113, an output circuit 114, a control circuit 115, and input / output terminals 116, which will be described later, are provided around the periphery of the semiconductor substrate 30, i.e., around the pixel section 100A.

[0059] Between the rear surface (first surface 30A) of the semiconductor substrate 30 and the photoelectric conversion unit 20, for example, a layer that holds a fixed charge (fixed charge layer 27A), a dielectric layer 27B having insulating properties, and an interlayer insulating layer 28 are stacked in this order from the first surface 30A side of the semiconductor substrate 30. A through electrode 34 is provided between the first surface 30A and the second surface 30B of the semiconductor substrate 30.

[0060] The fixed charge layer 27A is intended to reduce the interface state with the semiconductor substrate 30 and to suppress the generation of dark current from the interface with the semiconductor substrate 30. The fixed charge layer 27A may be a film having positive fixed charges or a film having negative fixed charges. The fixed charge layer 27A is preferably formed using a semiconductor material or a conductive material having a wider band gap than the semiconductor substrate 30. This makes it possible to suppress the generation of dark current at the interface with the semiconductor substrate 30. The fixed charge layer 27A may be formed using, for example, hafnium oxide (HfO ｘ ), aluminum oxide (AlO ｘ ), zirconium oxide (ZrO ｘ ), tantalum oxide (TaO ｘ ), titanium oxide (TiO ｘ ), lanthanum oxide (LaO ｘ ), praseodymium oxide (PrO ｘ ), cerium oxide (CeO ｘ ), neodymium oxide (NdO ｘ ), promethium oxide (PmO ｘ ), samarium oxide (SmO ｘ ), europium oxide (EuO ｘ ), gadolinium oxide (GdO ｘ ), terbium oxide (TbO ｘ ), dysprosium oxide (DyO ｘ ), holmium oxide (HoO ｘ ), thulium oxide (TmO ｘ ), ytterbium oxide (YbO ｘ ), lutetium oxide (LuO ｘ ), yttrium oxide (YO ｘ ), hafnium nitride (HfN ｘ ), aluminum nitride (AlN ｘ), hafnium oxynitride (HfO ｘ N ｙ ) and aluminum oxynitride (AlO ｘ N ｙ ) etc.

[0061] The dielectric layer 27B is intended to prevent light reflection caused by the difference in refractive index between the semiconductor substrate 30 and the interlayer insulating layer 28. The dielectric layer 27B is preferably formed using a material having a refractive index between the refractive index of the semiconductor substrate 30 and the refractive index of the interlayer insulating layer 28. Examples of materials that can be used to form the dielectric layer 27B include silicon oxide, TEOS, silicon nitride, and silicon oxynitride (SiON).

[0062] The interlayer insulating layer 28 is composed of, for example, a single layer film made of one of silicon oxide, silicon nitride, and silicon oxynitride, or a laminated film made of two or more of these materials. Pad portions 29A, 29C, and 29D, an upper first contact 29B, an upper second contact 29E, and an upper third contact 29F are provided within the interlayer insulating layer 28. The readout electrode 211 is connected to the floating diffusion FD1 via the upper second contact 29E, the pad portion 29C, the upper first contact 29B, the pad portion 29A, the through electrode 34, the connection portion 41A, and the lower second contact 46. A voltage application portion is connected to the storage electrode 212 via wiring such as the upper third contact 29F and the pad portion 29D.

[0063] The photoelectric conversion region 32 detects light of a wavelength different from that detected by the photoelectric conversion unit 20. The photoelectric conversion region 32 is an inorganic photoelectric conversion element that absorbs light in the infrared region, for example, to generate excitons. The photoelectric conversion region 32 is disposed within the semiconductor substrate 30 and is formed of an n-type semiconductor region. In other words, the photoelectric conversion region 32 is formed of a pn junction diode.

[0064] The gate insulating layer 33 is configured, for example, as a single layer film made of one of silicon oxide, silicon nitride, silicon oxynitride, etc., or as a laminated film made of two or more of these materials.

[0065] The through electrode 34 is provided between the first surface 30A and the second surface 30B of the semiconductor substrate 30, and functions as a connector between the photoelectric conversion unit 20 and the gate Gamp of the amplifier transistor AMP and the floating diffusion FD1, and also serves as a transmission path for signal charges generated in the photoelectric conversion unit 20. A reset gate Grst of the reset transistor RST is disposed adjacent to the floating diffusion FD1 (one of the source / drain regions 36B of the reset transistor RST). This makes it possible to reset the signal charges accumulated in the floating diffusion FD1 by the reset transistor RST.

[0066] The pad portions 29A, 29C, 29D, the upper first contact 29B, the upper second contact 29E, the upper third contact 29F, the lower first contact 45, the lower second contact 46, and the wiring 54 can be formed using, for example, a silicon material doped with impurities such as PDAS (Phosphorus Doped Amorphous Silicon), or a metal material such as aluminum (Al), tungsten (W), titanium (Ti), cobalt (Co), hafnium (Hf), and tantalum (Ta).

[0067] The protective layer 51 and the on-chip lens 52 are made of a light-transmitting material, and are, for example, a single-layer film made of one of silicon oxide, silicon nitride, silicon oxynitride, etc., or a stacked film made of two or more of these materials. The thickness of the protective layer 51 is, for example, 100 nm or more and 30,000 nm or less.

[0068] The light-shielding film 53 is provided, for example, so as to cover at least the region of the readout electrode 211 that is in direct contact with the charge storage layer 23, but not the storage electrode 212. The light-shielding film 53 can be formed using, for example, W, Al, an alloy of Al and Cu, or the like.

[0069] [Circuit Configuration of Unit Pixel] FIG. 4 is an equivalent circuit diagram of the photodetector 1 shown in FIG.

[0070] The reset transistor RST (reset transistor TR1rst) resets the signal charge transferred from the photoelectric conversion unit 20 to the floating diffusion FD1, and is configured, for example, by a MOS transistor. Specifically, the reset transistor TR1rst is configured by a reset gate Grst, a channel formation region 36A, and source / drain regions 36B and 36C. The reset gate Grst is connected to a reset line RST1, and one source / drain region 36B of the reset transistor TR1rst also serves as the floating diffusion FD1. The other source / drain region 36C constituting the reset transistor TR1rst is connected to a power supply line VDD.

[0071] The amplifier transistor AMP (amplifier transistor TR1amp) is a modulation element that modulates the amount of charge generated in the photoelectric conversion unit 20 into a voltage, and is configured, for example, by a MOS transistor. Specifically, the amplifier transistor AMP is configured with a gate Gamp, a channel formation region 35A, and source / drain regions 35B and 35C. The gate Gamp is connected to the readout electrode 211 and one source / drain region 36B (floating diffusion FD1) of the reset transistor TR1rst via a lower first contact 45, a connection portion 41A, a lower second contact 46, a through-electrode 34, etc. Furthermore, one source / drain region 35B shares an area with the other source / drain region 36C that constitutes the reset transistor TR1rst, and is connected to the power supply line VDD.

[0072] The select transistor SEL (select transistor TR1sel) is composed of a gate Gsel, a channel formation region 34A, and source / drain regions 34B and 34C. The gate Gsel is connected to a select line SEL1. One source / drain region 34B shares an area with the other source / drain region 35C that constitutes the amplifier transistor AMP, and the other source / drain region 34C is connected to a signal line (data output line) VSL1.

[0073] The transfer transistor TR2 (transfer transistor TR2trs) is used to transfer signal charges corresponding to blue that are generated and accumulated in the photoelectric conversion region 32 to the floating diffusion FD2. The transfer transistor TR2trs is connected to a transfer gate line TG2. A floating diffusion FD2 is provided in a region 37C near the gate Gtrs2 of the transfer transistor TR2trs. The signal charges accumulated in the photoelectric conversion region 32B are read out to the floating diffusion FD2 via a transfer channel formed along the gate Gtrs2.

[0074] Further provided on the second surface 30B side of the semiconductor substrate 30 are a reset transistor TR2rst, an amplifier transistor TR2amp, and a selection transistor TR2sel, which constitute a control section of the photoelectric conversion region 32.

[0075] The reset transistor TR2rst is composed of a gate, a channel forming region, and source / drain regions. The gate of the reset transistor TR2rst is connected to a reset line RST2, and one of the source / drain regions of the reset transistor TR2rst is connected to a power supply line VDD. The other source / drain region of the reset transistor TR2rst also serves as a floating diffusion FD2.

[0076] The amplifier transistor TR2amp is composed of a gate, a channel forming region, and source / drain regions. The gate is connected to the other source / drain region (floating diffusion FD2) of the reset transistor TR2rst. One of the source / drain regions constituting the amplifier transistor TR2amp shares the same region with one of the source / drain regions constituting the reset transistor TR2rst and is connected to the power supply line VDD.

[0077] The selection transistor TR2sel is composed of a gate, a channel formation region, and source / drain regions. The gate is connected to a selection line SEL2. One of the source / drain regions constituting the selection transistor TR2sel is shared with the other source / drain region constituting the amplifier transistor TR2amp. The other source / drain region constituting the selection transistor TR2sel is connected to a signal line (data output line) VSL2.

[0078] The reset lines RST1 and RST2, the selection lines SEL1 and SEL2, and the transfer gate line TG2 are connected to a vertical drive circuit that constitutes a drive circuit, and the signal lines (data output lines) VSL1 and VSL2 are connected to a column signal processing circuit 112 that constitutes a drive circuit.

[0079] [Method for Manufacturing Photodetector] The photodetector 1 of this embodiment can be manufactured, for example, as follows.

[0080] 5 to 10 show the order of steps in the manufacturing method of the photodetector 1. First, as shown in Fig. 5, for example, a p-well 31 is formed in a semiconductor substrate 30, and for example, an n-type photoelectric conversion region 32 is formed in this p-well 31. A p+ region is formed near the first surface 30A of the semiconductor substrate 30.

[0081] 5, n+ regions that will become floating diffusions FD1 and FD2 are formed on the second surface 30B of the semiconductor substrate 30, followed by the formation of a gate insulating layer 33 and a gate wiring layer 47 including the gates of the transfer transistor Tr2, select transistor SEL, amplifier transistor AMP, and reset transistor RST. This results in the formation of the transfer transistor Tr2, select transistor SEL, amplifier transistor AMP, and reset transistor RST. Furthermore, a multilayer wiring layer 40 is formed on the second surface 30B of the semiconductor substrate 30, which includes wiring layers 41 to 43, including a lower first contact 45, a lower second contact 46, and a connection portion 41A, and an insulating layer 44.

[0082] The base of the semiconductor substrate 30 is, for example, an SOI (Silicon on Insulator) substrate in which the semiconductor substrate 30, a buried oxide film (not shown), and a support substrate (not shown) are stacked. Although not shown in FIG. 5, the buried oxide film and the support substrate are bonded to the first surface 30A of the semiconductor substrate 30. After the ion implantation, an annealing process is performed.

[0083] Next, a support substrate (not shown) or another semiconductor substrate is bonded to the multilayer wiring layer 40 provided on the second surface 30B side of the semiconductor substrate 30, and the semiconductor substrate 30 is then turned upside down. Subsequently, the semiconductor substrate 30 is separated from the buried oxide film of the SOI substrate and the support substrate, exposing the first surface 30A of the semiconductor substrate 30. The above steps can be performed using techniques used in ordinary CMOS processes, such as ion implantation and CVD (Chemical Vapor Deposition).

[0084] 6, the semiconductor substrate 30 is processed from the first surface 30A side by, for example, dry etching to form, for example, an annular opening 34H. As shown in FIG. 6, the depth of the opening 34H penetrates from the first surface 30A to the second surface 30B of the semiconductor substrate 30 and reaches, for example, the connection portion 41A.

[0085] Next, for example, a negative fixed charge layer 27A and a dielectric layer 27B are formed in this order on the first surface 30A of the semiconductor substrate 30 and the side surface of the opening 34H. The fixed charge layer 27A is formed of, for example, HfO ｘ The dielectric layer 27B can be formed by depositing a SiO film using, for example, a plasma CVD method. ｘ Next, a pad portion 29A is formed at a predetermined position on the dielectric layer 27B, in which a barrier metal made of, for example, a laminated film of titanium and titanium nitride (Ti / TiN film) and a W film are laminated. Thereafter, an interlayer insulating layer 28 is formed on the dielectric layer 27B and the pad portion 29A, and the surface of the interlayer insulating layer 28 is planarized using a CMP (Chemical Mechanical Polishing) method.

[0086] 7, an opening 29H is formed on the pad portion 29A, and then a conductive material such as Al is filled into this opening 29H to form an upper first contact 29B. Next, as shown in FIG. 7, pad portions 29C and 29D are formed in the same manner as for the pad portion 29A, and then an interlayer insulating layer 28 and an upper second contact 29E and an upper third contact 29F are formed in this order.

[0087] 8, a conductive film 11X is formed on the interlayer insulating layer 28 by, for example, sputtering, and then patterned by photolithography. Specifically, a photoresist PR is formed at a predetermined position on the conductive film 211X, and then the conductive film 211X is processed by dry etching or wet etching. The photoresist PR is then removed, thereby forming the lower electrode 21 including the read electrode 211 and the storage electrode 212, as shown in FIG.

[0088] Next, as shown in FIG. 10 , an insulating layer 22, a charge storage layer 23, a photoelectric conversion layer 24, and an upper electrode 25 are sequentially formed. The insulating layer 22 is formed by depositing a silicon oxide film using, for example, an ALD method, and then planarizing the surface of the insulating layer 22 using a CMP method. An opening 22H is then formed on the readout electrode 211 using, for example, wet etching. The charge storage layer 23 can be formed using, for example, a sputtering method. The photoelectric conversion layer 24 is formed using, for example, a vacuum deposition method. The upper electrode 25 is formed, similarly to the lower electrode 21, using, for example, a sputtering method. A protective layer 51 including a light-shielding film 53 and wiring 54 is then formed on the upper electrode 25, and an on-chip lens 52 is then disposed on the protective layer 51. This completes the photodetector 1 shown in FIG. 3 .

[0089] Conductive films such as the photoelectric conversion layer 24, the lower electrode 21, and the upper electrode 25 can be formed using a dry film formation method or a wet film formation method. Examples of dry film formation methods include vacuum deposition using resistance heating or high-frequency heating, electron beam (EB) deposition, various sputtering methods (magnetron sputtering, RF-DC coupled bias sputtering, ECR sputtering, facing target sputtering, and high-frequency sputtering), ion plating, laser ablation, molecular beam epitaxy, and laser transfer. Other examples of dry film formation methods include chemical vapor deposition methods such as plasma CVD, thermal CVD, MOCVD, and photo-CVD. Examples of wet film formation methods include spin coating, inkjet printing, spray coating, stamping, microcontact printing, flexographic printing, offset printing, gravure printing, and dipping.

[0090] For patterning, in addition to photolithography, chemical etching such as shadow mask and laser transfer, physical etching using ultraviolet light or laser, etc. can be used. As for planarization techniques, in addition to CMP, laser planarization, reflow, etc. can be used.

[0091] [Operation of the Photodetector] Next, the charge accumulation operation and charge transfer operation of the unit pixel 10 in the photodetector 1 will be described.

[0092] FIG. 11 shows an example of the energy potential of the unit pixel 10 during non-saturated accumulation. FIG. 12 shows an example of the energy potential of the unit pixel 10 at the start of transfer. FIG. 13 shows an example of the energy potential of the unit pixel 10 during transfer. FIG. 14 shows an example of the energy potential of the unit pixel 10 at the end of transfer. In FIGS. 11 to 14, the horizontal axis represents each region of the readout electrode 211, OFB electrode 215, storage electrode 212A, control electrode 214, storage electrode 212B, OFB electrode 215, and readout electrode 211 of the unit pixel 10. In other words, the horizontal axis represents each region corresponding to line A-A shown in FIG. 2. The vertical axis represents the energy potential of the charge storage layer 23.

[0093] 15 shows an example of a timing chart illustrating the relationship between time and the voltage supplied to the unit pixel 10. In FIG. 15, the horizontal axis represents time, and the vertical axis represents the voltages supplied to the storage electrode 212A, the storage electrode 212B, the shield electrode 213, the control electrode 214, and the OFB electrode 215, respectively.

[0094] 15 , in the non-saturated accumulation operation, a voltage higher than the voltage supplied to the shield electrode 213 is supplied to each of the storage electrodes 212A and 212B of the unit pixel 10 (timing T1). A fixed voltage is supplied to the shield electrode 213. At this time, a voltage lower than the voltage supplied to each of the storage electrodes 212A and 212B and higher than the voltage supplied to the shield electrode 213 is supplied to the control electrode 214.

[0095] 11 , in the non-saturation storage operation, a charge q1 (e.g., electrons (e) as signal charge) is stored in an energy potential region generated in the charge storage layer 23 by the storage electrode 212A and the control electrode 214. An energy barrier is generated in the charge storage layer 23 between the storage electrode 212A and the readout electrode 211 by the OFB electrode 215. The energy barrier prevents the charge q1 from flowing to the readout electrode 211.

[0096] On the other hand, in a non-saturation storage operation, charge q2 (e.g., electrons (e) as signal charge) is stored in an energy potential region generated in the charge storage layer 23 by the storage electrode 212B and the control electrode 214. An energy barrier is generated in the charge storage layer 23 between the storage electrode 212B and the readout electrode 211 by the OFB electrode 215. The energy barrier prevents the charge q2 from flowing to the readout electrode 211.

[0097] The height of the energy potential decreases in the order of the energy barrier created by the OFB electrode 215, the height of the energy potential generated by the control electrode 214, and the height of the energy potential generated by the storage electrodes 212A and 212B.

[0098] (Transfer Start Operation) Here, the operation of transferring the charge q1 stored in the charge storage layer 23 by the storage electrode 212A to the readout electrode 211 will be described.

[0099] In the transfer start operation, as shown in Fig. 15, first, a low voltage is supplied to the control electrode 214 (timing T2). This increases the energy potential generated in the charge storage layer 23 by the control electrode 214, as shown in Fig. 12. Next, a low voltage is supplied to the storage electrode 212A. This increases the energy potential generated in the charge storage layer 23 by the storage electrode 212A, as shown in Fig. 12, and the charge q1 is pushed up.

[0100] (Transfer Operation) In the transfer operation, as shown in FIG. 15, a low voltage is supplied to the control electrode 214 and the storage electrode 212A (timing T3). The voltage supplied to the control electrode 214 is lower than the voltage supplied to the storage electrode 212A. As a result, as shown in FIG. 13, the energy potential barrier generated in the charge storage layer 23 by the storage electrode 212A exceeds the energy barrier and becomes higher. In addition, the energy potential barrier generated in the charge storage layer 23 by the control electrode 214 becomes higher than the energy potential barrier generated in the charge storage layer 23 by the storage electrode 212A. As a result, the charge q1 flows to the readout electrode 211 and is transferred to the floating diffusion FD1.

[0101] (Transfer End Operation) In the transfer end operation, first, a high voltage is supplied to the storage electrode 212A (see timing T1 in FIG. 15). As a result, as shown in FIG. 14, the energy potential barrier generated in the charge storage layer 23 by the storage electrode 212A becomes lower than the energy barrier generated by the OFB electrode 215. Next, a high voltage is supplied to the control electrode 214 (see timing T1 in FIG. 15). As a result, as shown in FIG. 11, the energy potential barrier generated in the charge storage layer 23 by the storage electrode 212A becomes lower, and the state returns to a non-saturated storage operation state.

[0102] In addition, the charge q2 stored in the energy potential region generated in the charge storage layer 23 by the storage electrode 212B is similarly transferred to the readout electrode 211 by sequentially executing the above-mentioned transfer start operation, transfer operation, and transfer end operation.

[0103] 16 shows another example of a timing chart illustrating the relationship between time and the voltage supplied to the unit pixel 10. In FIG. 16, the horizontal axis represents time, and the vertical axis represents the voltages supplied to the storage electrode 212A, the storage electrode 212B, the shield electrode 213, the control electrode 214, and the OFB electrode 215, respectively.

[0104] 16, the transfer start operation and the transfer operation may be performed substantially simultaneously. Specifically, in the transfer start operation, the supply of a low voltage to the control electrode 214 of the unit pixel 10 is started (timing T2). Immediately after (substantially simultaneously with) the transfer start operation, the transfer operation is performed, and the supply of a low voltage to the storage electrode 212A of the unit pixel 10 is started (timing T3).

[0105] In this way, by performing the transfer start operation and the transfer operation substantially simultaneously, the transfer speed of the charge q1 stored in the charge transfer layer 202 by the storage electrode 212A can be increased.

[0106] Furthermore, the rate at which the voltage is supplied to the storage electrode 212A is set slower than the rate at which the voltage is supplied to the control electrode 214. That is, in the charge transfer layer 202, the energy potential barrier generated by the control electrode 214 rises before the energy potential barrier generated by the storage electrode 212A rises (see FIG. 13 ). Therefore, for example, the flow of the charge q1 stored in the charge transfer layer 202 by the storage electrode 212A to the charge q2 stored in the charge transfer layer 202 by the storage electrode 212B is effectively suppressed or prevented. That is, blooming can be effectively suppressed or prevented.

[0107] An electrode 262 may be provided on the charge storage layer 23 above the control electrode 214. In this embodiment, an opening 26 is formed above the control electrode 214, and therefore, as shown in Fig. 17, the electrode 262 is disposed at the bottom of the opening 26. This improves the controllability of the energy potential between the storage electrodes 212A and 212B.

[0108] [Actions and Effects] In the photodetector 1 of the present embodiment, the unit pixel 10 has phase difference detection pixels 10A and 10B arranged in parallel and generating signals for phase difference detection. The unit pixel 10 further has a photoelectric conversion layer 24, and an opening 26 for removing the photoelectric conversion layer 24 is provided between the phase difference detection pixel 10A and the phase difference detection pixel 10B. This reduces sensitivity variations caused by variations in the allocation of charges generated between the phase difference detection pixel 10A and the phase difference detection pixel 10B to the phase difference detection pixel 10A and the phase difference detection pixel 10B in the multiple unit pixels 10 arranged in the pixel section 100A. This is described below.

[0109] Most conventional image sensors use silicon substrates. In recent years, image sensors using organic materials for the photoelectric conversion elements have been proposed. For example, in a solid-state imaging device that has a charge transfer layer directly below the photoelectric conversion layer using the aforementioned organic material, a control electrode is provided between two storage electrodes. When the charge stored in the storage electrode is transferred to the floating diffusion, a control voltage is also applied to control the charge movement, enabling full-surface phase difference detection.

[0110] However, in a solid-state imaging device having the above-described structure, the charge generated by photoelectric conversion on the control electrode cannot control the transport path to the charge transfer layer, and is therefore randomly allocated to one of the storage electrodes, resulting in variations in sensitivity and a concern that the movement difference detection function (separation ratio) may be deteriorated.

[0111] In contrast to this, in the present embodiment, as described above, in the unit pixel P10 having the phase difference detection pixels 10A and 10B that generate signals for phase difference detection and are arranged in parallel, an opening 26 is provided that removes the photoelectric conversion layer 24 between the phase difference detection pixel 10A and the phase difference detection pixel 10B. This reduces variations in sensitivity caused by variations in allocation of charges generated between the phase difference detection pixel 10A and the phase difference detection pixel 10B to the phase difference detection pixel 10A and the phase difference detection pixel 10B in the plurality of unit pixels 10 arranged in the pixel section 100A.

[0112] As described above, the photodetector 1 of this embodiment can improve the photodetection characteristics. In particular, the photodetector 1 of this embodiment can improve the phase difference detection function among the photodetection characteristics.

[0113] Furthermore, the photodetector 1 of the present embodiment has a charge accumulation layer 23 between the lower electrode 21 and the photoelectric conversion layer 24. In the present embodiment, although the photoelectric conversion layer 24 between the phase difference detection pixel 10A and the phase difference detection pixel 10B is removed by the opening 26, the charge accumulation layer 23 is continuously formed between the phase difference detection pixel 10A and the phase difference detection pixel 10B. This allows charge to be shared between the phase difference detection pixel 10A and the phase difference detection pixel 10B, thereby ensuring the number of saturated electrons. Therefore, it is possible to achieve both a high dynamic range and improved phase difference detection function.

[0114] Next, second to fourth embodiments and modifications 1 to 15 of the present disclosure, as well as application examples and applied examples, will be described. Note that components corresponding to those in the photodetector 1 of the first embodiment are given the same reference numerals, and descriptions thereof will be omitted.

[0115] 18 to 25 are schematic diagrams illustrating an example of a cross-sectional configuration of a unit pixel 10 of a photodetector (photodetector devices 1A to 1H) according to a first modification of the present disclosure. Similar to FIG. 1B, FIGS. 18 to 25 illustrate cross sections corresponding to line II shown in FIG. 1A. Similar to the photodetector device 1 of the first embodiment, the photodetector devices 1A to 1H are, for example, CMOS image sensors used in electronic devices such as digital still cameras and video cameras.

[0116] In the first embodiment described above, the opening 26 having an inverted tapered shape is shown as a specific example of an "opening" as one embodiment of the present disclosure, but the shape of the opening 26 is not limited to this.

[0117] For example, a photodetector 1A according to this modification has an opening 26A having a forward tapered shape as shown in FIG. 18 , as a specific example of an “opening” according to an embodiment of the present disclosure. For example, a photodetector 1B according to this modification has an opening 26B having vertical side surfaces as shown in FIG. 19 , as a specific example of an “opening” according to an embodiment of the present disclosure, and the opening 26 is left as a void instead of being filled with an insulating film 261. For example, a photodetector 1C according to this modification has an opening 26C having vertical side surfaces as shown in FIG. 20 , as a specific example of an “opening” according to an embodiment of the present disclosure, and a sealing film 263 is provided on the side and bottom surfaces of the opening 26C. For example, a photodetector 1D according to this modification has an opening 26D having a forward tapered shape and a bottom surface as shown in FIG. 21 , as a specific example of an “opening” according to an embodiment of the present disclosure, in the photoelectric conversion layer 24. For example, the photodetector 1E of this modified example is provided with an opening 26E that further separates the upper electrode 25 as shown in FIG. 22, as a specific example of an "opening" according to an embodiment of the present disclosure.

[0118] 23 , as a specific example of an “opening” according to an embodiment of the present disclosure, a photodetector 1F of this modification has a stopper film 264 disposed on the charge storage layer 23 above the control electrode 214, thereby providing an opening 26F. This makes it possible to prevent damage to the charge storage layer 23 when forming the opening 26F by, for example, etching.

[0119] For example, in the photodetector 1G of this modification, as a specific example of an "opening" according to an embodiment of the present disclosure, as shown in FIG. 24 , the photoelectric conversion layer 24 is removed, an opening 26G is provided to separate the upper electrode 25, and a reflective film 265 is disposed at the bottom of the opening 26G. The reflective film 265 has a prism shape, and light incident on the opening 26G is directed toward the storage electrode 212A side or the storage electrode 212B side. This suppresses a decrease in sensitivity due to the removal of a portion of the photoelectric conversion layer 24.

[0120] 25, as a specific example of an "opening" according to an embodiment of the present disclosure, photodetector 1H of this modification is provided with opening 26H having vertical side surfaces, and has waveguide 266 formed thereover. As a result, similar to photodetector 1G, light incident on opening 26H is distributed to either storage electrode 212A or storage electrode 212B, thereby suppressing a decrease in sensitivity due to removal of a portion of photoelectric conversion layer 24.

[0121] Except for these points, the photodetectors 1A to 1H have substantially the same configuration as the photodetector 1 of the above embodiment.

[0122] Even with this configuration, the photodetecting devices 1A to 1H of this modification can achieve the same effects as those of the first embodiment.

[0123] 26 is a schematic diagram illustrating an example of a planar configuration of the layout of unit pixels 10 of a photodetector (photodetector 1I) according to Modification 2 of the present disclosure. Like the photodetector 1 of the first embodiment, the photodetector 1I is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0124] In the first embodiment, an example in which the OFB electrode 215 is provided between the readout electrode 211 and the control electrode 214 is shown, but the present invention is not limited to this. In the photodetector 1I of this modified example, transfer electrodes 216 are provided between the readout electrode 211 and the storage electrodes 212A and 212B, respectively, instead of the OFB electrode 215. Except for this point, the photodetector 1I has substantially the same configuration as the photodetector 1 of the above embodiment.

[0125] The transfer electrode 216 corresponds to a specific example of a "transfer electrode" according to an embodiment of the present disclosure. The transfer electrode 216 is, for example, a gate electrode of a switch element, and controls the energy potential of the charge storage layer 23 between the readout electrode 211 and the storage electrodes 212A and 212B, thereby controlling the flow of charges stored in the charge storage layer 23 above the storage electrode 212A and charges stored in the charge storage layer 23 above the storage electrode 212B to the readout electrode 211. The transfer electrode 216 is formed in the same conductive layer as the readout electrode 211, the storage electrodes 212A and 212B, the shield electrode 213, and the control electrode 214, and is made of the same conductive material.

[0126] [Operation of Photodetector] Next, the charge accumulation operation and charge transfer operation of the unit pixel 10 in the photodetector 1I will be described.

[0127] FIG. 27 shows an example of the energy potential of the unit pixel 10 during non-saturated accumulation. FIG. 28 shows an example of the energy potential of the unit pixel 10 at the start of transfer. FIG. 29 shows an example of the energy potential of the unit pixel 10 during transfer. FIG. 30 shows an example of the energy potential of the unit pixel 10 at the end of transfer. In FIGS. 27 to 30, the horizontal axis represents each region of the readout electrode 211, transfer electrode 216, storage electrode 212A, control electrode 214, storage electrode 212B, transfer electrode 216, and readout electrode 211 of the unit pixel 10. In other words, the horizontal axis represents each region corresponding to line B-B shown in FIG. 26. The vertical axis represents the energy potential of the charge storage layer 23.

[0128] 31 shows an example of a timing chart illustrating the relationship between time and the voltage supplied to the unit pixel 10. In FIG. 31, the horizontal axis represents time, and the vertical axis represents the voltages supplied to the storage electrode 212A, the storage electrode 212B, the shield electrode 213, the control electrode 214, and the transfer electrode 216, respectively.

[0129] (Non-saturated accumulation operation) In the non-saturated accumulation operation, as shown in FIG. 31 , a voltage higher than the voltage supplied to the shield electrode 213 is supplied to each of the storage electrodes 212A and 212B of the unit pixel 10 (timing T1). A fixed voltage is supplied to each of the storage electrodes 212A and 212B from the non-saturated accumulation operation to the transfer end operation. Meanwhile, a fixed voltage is also supplied to the shield electrode 213. At this time, a voltage lower than the voltages supplied to each of the storage electrodes 212A and 212B and higher than the voltage supplied to the shield electrode 213 is supplied to the control electrode 214. Furthermore, a low voltage that turns the transfer electrode 216 into an off state is supplied to the transfer electrode 216. A voltage lower than the voltage supplied to the control electrode 214 and higher than the voltage supplied to the shield electrode 213 is supplied to the transfer electrode 216.

[0130] 27 , in the non-saturation storage operation, charge q1 (e.g., electrons (e) as signal charge) is stored in the energy potential region generated in the charge storage layer 23 by the storage electrode 212A, the control electrode 214, and the transfer electrode 216. Since the transfer electrode 216 is in the OFF state, the charge q1 stored in the charge storage layer 23 by the storage electrode 212A is not transferred to the readout electrode 211.

[0131] On the other hand, in a non-saturated storage operation, charge q2 (e.g., electrons (e) as signal charge) is stored in an energy potential region generated in the charge storage layer 23 by the storage electrode 212B, the control electrode 214, and the transfer electrode 216. Since the transfer electrode 216 is in the OFF state, the charge q2 stored in the charge storage layer 23 by the storage electrode 212B is not transferred to the readout electrode 211.

[0132] The height of the energy potential decreases in the order of the energy potential generated by the transfer electrode 216, the energy potential generated by the control electrode 214, and the energy potential generated by the storage electrode 212A and the storage electrode 212B.

[0133] (Transfer Start Operation) Here, the operation of transferring the charge q1 stored in the charge storage layer 23 by the storage electrode 212A to the readout electrode 211 will be described.

[0134] 31, in the transfer start operation, first, a low voltage starts to be supplied to the control electrode 214 (timing T2), which increases the energy potential generated in the charge storage layer 23 by the control electrode 214, as shown in FIG.

[0135] 31, a high voltage is supplied to the transfer electrode 216 disposed between the storage electrode 212A and the readout electrode 211, and the transfer electrode 216 is turned on (timing T3). This lowers the barrier between the energy potential generated in the charge storage layer 23 by the storage electrode 212A and the energy potential generated in the charge storage layer 23 by the readout electrode 211, as shown in FIG. 29. In other words, the charge q1 stored in the charge storage layer 23 by the storage electrode 212A flows through the transfer electrode 216 to the readout electrode 211 and is transferred to the floating diffusion FD1.

[0136] (4) Transfer End Operation In the transfer end operation, a low voltage is supplied to the transfer electrode 216, turning the transfer electrode 216 off (see timing T1 in FIG. 27). This increases the energy potential barrier generated in the charge storage layer 23 in the region corresponding to the transfer electrode 216, returning the state to a non-saturated storage operation.

[0137] In addition, the charge q2 stored in the energy potential region generated in the charge storage layer 23 by the storage electrode 212B is similarly transferred to the readout electrode 211 by sequentially executing the above-mentioned transfer start operation, transfer operation, and transfer end operation.

[0138] As described above, in the photodetector 1I of this modified example, as shown in FIGS. 27, 28, and 31, a voltage is supplied to the control electrode 214 from the transfer start operation to the transfer operation of the unit pixel 10. Thereafter, in the transfer operation, the transfer electrode 216 is turned on. When a voltage is supplied to the control electrode 214 first, the energy potential generated in the charge storage layer 23 increases. Therefore, for example, it is possible to effectively suppress or prevent the flow of the charge q1 stored in the charge storage layer 23 by the storage electrode 212A to the charge q2 stored in the charge storage layer 23 by the storage electrode 212B. In other words, it is possible to effectively suppress or prevent blooming.

[0139] 32 shows another example of a timing chart illustrating the relationship between time and the voltage supplied to the unit pixel 10. In FIG. 32, the horizontal axis represents time, and the vertical axis represents the voltages supplied to the storage electrode 212A, the storage electrode 212B, the shield electrode 213, the control electrode 214, and the transfer electrode 216, respectively.

[0140] The transfer start operation and the transfer operation may be performed substantially simultaneously, as shown in Fig. 32. In detail, in the transfer start operation, supply of a low voltage to the control electrode 214 of the unit pixel 10 is started (timing T2). Immediately after (substantially simultaneously with) the transfer start operation, the transfer operation is performed, and supply of a high voltage to the transfer electrode 216 of the unit pixel 10 is started (timing T3).

[0141] In this way, by performing the transfer start operation and the transfer operation substantially simultaneously, it is possible to increase the transfer speed of the charge q1 stored in the charge storage layer 23 by the storage electrode 212A.

[0142] The rate at which voltage is supplied to the transfer electrode 216 is set slower than the rate at which voltage is supplied to the control electrode 214. That is, in the charge transfer layer 202, the barrier of the energy potential generated by the control electrode 16 first becomes high, and then the transfer electrode 216 is turned on and the charge q1 is transferred (see FIG. 29 ). Therefore, for example, the flow of the charge q1 stored in the charge storage layer 23 by the storage electrode 212A to the charge q2 stored in the charge storage layer 23 by the storage electrode 212B is effectively suppressed or prevented. In other words, blooming can be effectively suppressed or prevented.

[0143] 33 schematically illustrates an example of a planar configuration of the layout of unit pixels 10 of a photodetector (photodetector 1J) according to Modification 3 of the present disclosure. Like the photodetector 1 of the first embodiment, the photodetector 1J is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0144] In the first embodiment, an example in which the OFB electrode 215 is provided between the readout electrode 211 and the control electrode 214 is shown, but the present invention is not limited to this. In the photodetector 1J of this modified example, a control electrode 217 is provided between the readout electrode 211 and the storage electrodes 212A and 212B instead of the OFB electrode 215. Except for this point, the photodetector 1J has substantially the same configuration as the photodetector 1 of the above embodiment.

[0145] The control electrode 217 controls the energy potential of the charge storage layer 23 between the readout electrode 211 and the storage electrodes 212A and 212B, and controls the flow of charges stored by the storage electrode 212A in the charge storage layer 23 above it and charges stored by the storage electrode 212B in the charge storage layer 23 above it to the readout electrode 211. The control electrode 217 is provided across the phase difference detection pixel 10A and the phase difference detection pixel 10B, and a variable voltage is applied to the control electrode 217, similar to the control electrode 214. The control electrode 217 is formed in the same conductive layer as the readout electrode 211, the storage electrodes 212A and 212B, the shield electrode 213, and the control electrode 214, and is made of the same conductive material.

[0146] Even with this configuration, the photodetector 1J of this modified example can obtain the same effects as those of the first embodiment.

[0147] 34 is a schematic diagram illustrating an example of a planar configuration of the layout of a unit pixel 10 of a photodetector (photodetector 1K) according to Modification 4 of the present disclosure. Similar to the photodetector 1 of the first embodiment, the photodetector 1K is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0148] In the first embodiment, an example in which the OFB electrode 215 is provided between the readout electrode 211 and the control electrode 214 is shown, but the present invention is not limited to this. In the photodetector 1K of this modified example, the OFB electrode 215 is omitted, and the control electrode 214 between the storage electrodes 212A and 212B has the same length in the Y-axis direction as the storage electrodes 212A and 212B. Except for this point, the photodetector 1K has substantially the same configuration as the photodetector 1 of the above embodiment.

[0149] Even with this configuration, the photodetector 1K of this modified example can obtain the same effects as those of the first embodiment.

[0150] 35 is a schematic diagram illustrating an example of a planar configuration of the layout of a unit pixel 10 of a photodetector (photodetector 1L) according to Modification 5 of the present disclosure. Similar to the photodetector 1 of the first embodiment, the photodetector 1L is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0151] In the first embodiment, an example in which the control electrode 214 is provided between the storage electrodes 212A and 212B is shown, but the present invention is not limited to this. In the photodetector 1L of this modification, the control electrode 214 is provided on the side of the adjacent pixel opposite the readout electrode 211, and a drain electrode 218 is disposed below the opening 26, and a shield electrode 213 is disposed around the drain electrode 218. Except for this point, the photodetector 1L has substantially the same configuration as the photodetector 1 of the first embodiment.

[0152] The drain electrode 218 corresponds to a specific example of an "exhaust electrode" according to an embodiment of the present disclosure. The drain electrode 218 is intended to remove dark current caused by damage to the photoelectric conversion layer 24 when the opening 26 is formed. A voltage (pixel power supply) equivalent to that applied to the readout electrode 211 is applied to the drain electrode 218. This reduces the number of required voltage sources. A shield electrode 213 to which a fixed potential is applied is provided around the drain electrode 218, thereby electrically isolating the storage electrodes 212A and 212B from the drain electrode 218.

[0153] Even with this configuration, the photodetector 1L of this modified example can obtain the same effects as those of the first embodiment.

[0154] (2-6. Modification 6) Fig. 36 is a schematic diagram illustrating an example of a planar configuration (A) and a cross-sectional configuration (B) of the layout of a unit pixel 10 of a photodetector (photodetector 1M) according to Modification 6 of the present disclosure. Note that Fig. 36B illustrates a cross section corresponding to line III-III shown in Fig. 36A. Like the photodetector 1 of the first embodiment, the photodetector 1M is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0155] In the first embodiment described above, an example has been shown in which the opening 26 is provided in the photoelectric conversion layer 24 above the control electrode 214 disposed between the phase difference detection pixel 10A and the phase difference detection pixel 10B, but the photoelectric conversion layer 24 above the lower electrode 21 other than the control electrode 214 may be further processed. In the photodetector 1M of this modified example, an opening 26I is further provided above the shield electrode 213. Except for this point, the photodetector 1M has substantially the same configuration as the photodetector 1 of the first embodiment described above.

[0156] Like the opening 26, the opening 26I is formed by removing the photoelectric conversion layer 24, and as described above, is provided above the shield electrode 213. In other words, like the shield electrode 213, the opening 26I is formed, for example, in a lattice shape in plan view. As shown in Fig. 36B, for example, the opening 26I may be formed up to the charge storage layer 23 together with the photoelectric conversion layer 24. This limits the movement of charges between adjacent unit pixels P, thereby preventing color mixing.

[0157] Even with this configuration, the photodetector 1M of this modified example can obtain the same effects as those of the first embodiment.

[0158] 3. Second Embodiment Fig. 37A is a schematic diagram illustrating a cross-sectional configuration of a photodetector 2 according to a second embodiment of the present disclosure. Fig. 37B is a schematic diagram illustrating an example of the planar configuration of the photodetector 2 illustrated in Fig. 37A, and Fig. 37A illustrates a cross section corresponding to line IV-IV illustrated in Fig. 37B. Similar to the photodetector 1 of the first embodiment, the photodetector 2 is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0159] [Configuration of Photodetector] Similar to the photodetector 1 of the first embodiment, the photodetector 2 is a stacked photodetector in which a photoelectric conversion unit 20 and a photoelectric conversion region 32 are stacked. In the pixel section 100A of this photodetector 2, as shown in Fig. 37B, for example, pixel units 2a each consisting of four pixels (unit pixels P1, P2, P3, and P4) arranged in two rows and two columns are repeated in an array formed in the row and column directions.

[0160] In the photodetector 2, a color filter 55 that selectively transmits red light (R), green light (G), and blue light (B) is provided for each unit pixel P above the photoelectric conversion unit 20 (on the light incident side S1). Specifically, in a pixel unit 2a consisting of four pixels arranged in two rows and two columns, two color filters (green filters 55G) that selectively transmit green light (G) are arranged diagonally, and two color filters (red filter 55R and blue filter 55B) that selectively transmit red light (R) and blue light (B) are arranged on orthogonal diagonals. In a unit pixel P provided with one of the color filters 55R, 55G, and 55B, the photoelectric conversion unit 20 detects the corresponding color light, for example. That is, in the pixel unit 100A, pixels that detect red light (R), green light (G), and blue light (B), respectively, are arranged in a Bayer pattern.

[0161] In the photodetector 2, of the light transmitted through the color filter 55, light in the visible light region (red light (R), green light (G), and blue light (B)) is absorbed by the photoelectric conversion unit 20 of the unit pixel provided with any one of the color filters 55R, 55G, and 55B, while other light, for example, infrared light (IR), is transmitted through the photoelectric conversion unit 20. The infrared light (IR) transmitted through the photoelectric conversion unit 20 is detected in the photoelectric conversion region 32 of the unit pixel provided with any one of the color filters 55R, 55G, and 55B, and a signal charge corresponding to the infrared light (IR) is generated. In other words, the photodetector 2 is capable of simultaneously generating both a visible light image and an infrared light image.

[0162] Furthermore, the photodetector 2 can acquire a visible light image and an infrared light image at the same position in the XZ in-plane direction, thereby achieving high integration in the XZ in-plane direction.

[0163] In the photodetector 2, a phase difference detection pixel is configured in all or some of a plurality of pixel units 2a repeatedly arranged in an array in the pixel section 100A. In the pixel units 2a constituting the phase difference detection pixel, for example, as shown in FIGS. 42A and 42B , an on-chip lens 52 is disposed across unit pixels P1 and P2, and unit pixels P3 and P4, which are adjacent in the X-axis direction. The unit pixels P1 and P2 (and unit pixels P3 and P4) across which the on-chip lens 52 is disposed correspond to specific examples of a "first pixel" and a "second pixel" as an embodiment of the present disclosure. Openings 26 for removing the photoelectric conversion layer 24 are provided between the unit pixels P1 and P2 and between the unit pixels P3 and P4 across which the on-chip lens 52 is disposed.

[0164] [Functions and Effects] In this manner, in the photodetector 2, a plurality of pixel units 2a, each consisting of four pixels (unit pixels P1, P2, P3, and P4) arranged in, for example, two rows and two columns, are repeatedly arranged in the pixel section 100A. In this embodiment, an opening 26 is provided in the photoelectric conversion layer 24 between, for example, the unit pixels P1 and P2 and between the unit pixels P3 and P4 that are adjacent in the X-axis direction, constituting the plurality of pixel units 2a. This reduces variations in sensitivity due to variations in the distribution of charges generated between adjacent unit pixels. Furthermore, in this embodiment, in all or some of the plurality of pixel units 2a, an on-chip lens 52 is provided across, for example, the unit pixels P1 and P2 and the unit pixels P3 and P4 that are adjacent in the X-axis direction, thereby constituting a phase difference detection pixel. In the pixel unit 2 a constituting this phase difference detection pixel, openings 26 are provided in the photoelectric conversion layer 24 between the unit pixel P1 and the unit pixel P2 and between the unit pixel P3 and the unit pixel P4, which are straddled by the on-chip lens 52, thereby reducing variations in sensitivity due to variations in the distribution of charges generated between adjacent phase difference detection pixels.

[0165] As described above, in the photodetector 2 of this embodiment, it is possible to improve the photodetection characteristics, similarly to the first embodiment. In particular, as shown in Figures 37A and 37B, in the pixel unit 2a constituting the phase difference detection pixel, it is possible to improve the phase difference detection function among the photodetection characteristics.

[0166] Furthermore, in the photodetector 2 of this embodiment, as in the first embodiment, the charge storage layer 23 is formed continuously between the phase difference detection pixels. This allows charge to be shared between the phase difference detection pixels, thereby ensuring a sufficient number of saturation electrons. This makes it possible to achieve both a high dynamic range and improved phase difference detection function.

[0167] 38 schematically illustrates an example of a planar configuration of the layout of a pixel unit 2 a of a photodetector (photodetector 2A) according to Modification 7 of the present disclosure. Like the photodetector 1 of the first embodiment, the photodetector 2A is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0168] In the second embodiment described above, an example has been shown in which the shield electrode 213 protrudes between unit pixels P1 and P2, and between unit pixels P3 and P4, which are adjacent in the X-axis direction and which constitute a phase difference detection pixel, but this is not limited to this. In the photodetector 2A of this modified example, a drain electrode 218 is disposed between unit pixels P1 and P2, and between unit pixels P3 and P4, which are adjacent in the X-axis direction and which constitute a phase difference detection pixel. Except for this point, the photodetector 2A has substantially the same configuration as the photodetector 2 of the second embodiment described above.

[0169] As in the fifth modification, the drain electrode 218 serves to remove dark current caused by damage to the photoelectric conversion layer 24 when the opening 26 is formed. The drain electrode 218 is applied with the same voltage (pixel power supply) as the readout electrode 211. This reduces the number of required voltage sources. The drain electrode 218 is formed in the same conductive layer as the readout electrode 211, the storage electrode 212, and the shield electrode 213, and is made of the same conductive material.

[0170] Even with this configuration, the photodetector 2A of this modified example can obtain the same effects as those of the second embodiment.

[0171] 39 schematically illustrates an example of a planar configuration of the layout of pixel units 2 a of a photodetector (photodetector 2B) according to Modification 8 of the present disclosure. Similar to the photodetector 1 of the first embodiment, the photodetector 2B is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0172] In the photodetector 2B of this modification, a transfer electrode 216 is disposed between the readout electrode 211 and the storage electrode 212 of each of the unit pixels P1, P2, P3, and P4. Except for this point, the photodetector 2B has substantially the same configuration as the photodetector 2 of the second embodiment.

[0173] As in the second modification, the transfer electrode 216 is, for example, a gate electrode of a switch element, and controls the energy potential of the charge storage layer 23 between the readout electrode 211 and the storage electrode 212 to control the flow of charges stored in the charge storage layer 23 above the storage electrode 212 to the readout electrode 211. The transfer electrode 216 is formed in the same conductive layer as the readout electrode 211, the storage electrode 212, and the shield electrode 213, and is made of the same conductive material.

[0174] Even with this configuration, the photodetector 2B of this modified example can obtain the same effects as those of the second embodiment.

[0175] 40 schematically illustrates an example of a planar configuration of the layout of pixel units 2 a of a photodetector (photodetector 2C) according to a ninth modification of the present disclosure. Similar to the photodetector 1 of the first embodiment, the photodetector 2C is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0176] In the photodetector 2C of this modified example, a control electrode 217 is disposed between the readout electrode 211 and the storage electrode 212 of each of the unit pixels P1, P2, P3, and P4. Except for this point, the photodetector 2C has substantially the same configuration as the photodetector 2 of the second embodiment.

[0177] As in the third modification, the control electrode 217 controls the energy potential of the charge storage layer 23 between the readout electrode 211 and the storage electrode 212, thereby controlling the flow of charges stored in the charge storage layer 23 above the storage electrode 212 to the readout electrode 211. The control electrode 217 is provided in a ring shape to surround the readout electrode 211 between the readout electrode 211 and the storage electrodes 212 of each of the unit pixels P1, P2, P3, and P4. Similarly to the transfer electrodes 216, the control electrodes 217 may be individually provided between the readout electrode 211 and the storage electrodes 212 of each of the unit pixels P1, P2, P3, and P4. A variable voltage is applied to the control electrode 217. The control electrode 217 is formed in the same conductive layer as the readout electrode 211, the storage electrode 212, and the shield electrode 213, and is made of the same conductive material.

[0178] Even with this configuration, the photodetector 2C of this modified example can obtain the same effects as those of the second embodiment.

[0179] (4-4. Modification 10) FIG. 41A is a schematic diagram illustrating a cross-sectional configuration of a photodetector 2D according to Modification 10 of the present disclosure. FIG. 41B is a schematic diagram illustrating an example of the planar configuration of the photodetector 2D illustrated in FIG. 41A, and FIG. 41A illustrates a cross section corresponding to the V-V line illustrated in FIG. 41B. In the second embodiment described above, the color filter 55 is provided above the photoelectric conversion unit 20 (on the light incident side S1). However, the color filter 55 may be provided, for example, between the photoelectric conversion unit 20 and the photoelectric conversion region 32, as illustrated in FIG. 41A. Except for this point, the photodetector 2D has substantially the same configuration as the photodetector 2 of the second embodiment described above.

[0180] In the photodetector 2D, for example, the color filter 55 has a configuration in which a color filter (red filter 55R) that selectively transmits at least red light (R) and a color filter (blue filter 55B) that selectively transmits at least blue light (B) are arranged diagonally opposite each other within the pixel unit 2a. The photoelectric conversion layer 24 of the photoelectric conversion unit 20 is configured to selectively absorb light having a wavelength corresponding to green light (G), for example. The photoelectric conversion region 32R selectively absorbs light having a wavelength corresponding to red light (R), and the photoelectric conversion region 32B selectively absorbs light having a wavelength corresponding to blue light (B). This makes it possible to obtain signals corresponding to red light (R), green light (G), or blue light (B) in the photoelectric conversion regions 32 (photoelectric conversion regions 32R and 32B) arranged below the photoelectric conversion unit 20 and the color filters 55R and 55B, respectively. In the photodetector 2D of this modified example, the area of ​​the photoelectric conversion section for each of RGB can be enlarged compared to a photodetector having a general Bayer array, making it possible to improve the S / N ratio.

[0181] 5. Third Embodiment Fig. 42A is a schematic diagram illustrating a cross-sectional configuration of a photodetector 3 according to a third embodiment of the present disclosure. Fig. 42B is a schematic diagram illustrating an example of the planar configuration of the photodetector 3 illustrated in Fig. 42A, and Fig. 42A illustrates a cross section corresponding to line VI-VI illustrated in Fig. 42B. Similar to the photodetector 1 of the first embodiment, the photodetector 3 is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0182] [Configuration of Photodetector] Similar to the photodetector 1 of the first embodiment, the photodetector 3 is a stacked-type photodetector in which a photoelectric conversion unit 20 and a photoelectric conversion region 32 are stacked. In the photodetector 3, the photoelectric conversion unit 20 is formed by stacking a lower electrode 21, a photoelectric conversion layer 24, and an upper electrode 25 in this order from the semiconductor substrate 30 side. That is, the photoelectric conversion unit 20 of this embodiment does not include the insulating layer 22 and the charge storage layer 23. Furthermore, in the photoelectric conversion unit 20 of this embodiment, a readout electrode 211 is provided for each unit pixel P as the lower electrode 21, and a shield electrode 213 is provided around the readout electrode 211.

[0183] In the photodetector 3, similarly to the photodetector 2 of the second embodiment, a color filter 55 that selectively transmits red light (R), green light (G), and blue light (B) is provided for each unit pixel P above the photoelectric conversion unit 20 (on the light incident side S1). Specifically, in four pixels arranged in two rows and two columns, two color filters (green filters 55G) that selectively transmit green light (G) are arranged diagonally, and one color filter (red filter 55R and blue filter 55B) that selectively transmit red light (R) and blue light (B) is arranged on each orthogonal diagonal. In a unit pixel P provided with one of the color filters 55R, 55G, or 55B, the photoelectric conversion unit 20 detects the corresponding color light, for example. That is, in the pixel unit 100A, pixels that detect red light (R), green light (G), and blue light (B) are arranged in a Bayer pattern.

[0184] In the photodetector 3, light in the visible light region (red light (R), green light (G), and blue light (B)) that passes through the color filter 55 is absorbed by the photoelectric conversion unit 20 of a unit pixel that is provided with any one of the color filters 55R, 55G, and 55B, while other light, such as infrared light (IR), passes through the photoelectric conversion unit 20. The infrared light (IR) that passes through the photoelectric conversion unit 20 is detected in the photoelectric conversion region 32 of the unit pixel that is provided with any one of the color filters 55R, 55G, and 55B, and a signal charge corresponding to the infrared light (IR) is generated. That is, in the photodetector 3, as in the second embodiment, both a visible light image and an infrared light image can be generated simultaneously.

[0185] Furthermore, the photodetector 3 can acquire a visible light image and an infrared light image at the same position in the XY in-plane direction, thereby enabling high integration in the XY in-plane direction.

[0186] In the photodetector 3, a phase difference detection pixel is configured over the entire surface or a part of a pixel section 100A in which a plurality of unit pixels P are two-dimensionally arranged in a matrix. As in the second embodiment, the phase difference detection pixel is configured by disposing an on-chip lens 52 across unit pixels P adjacent to each other in, for example, the X-axis direction. The unit pixels P across which the on-chip lens 52 is disposed correspond to a specific example of a "first pixel" and a "second pixel" as an embodiment of the present disclosure. An opening 26 through which the photoelectric conversion layer 24 is removed is provided between the adjacent unit pixels P across which the on-chip lens 52 is disposed.

[0187] [Actions and Effects] As described above, in the photodetector 3, a plurality of unit pixels P are two-dimensionally arranged in a matrix in the pixel section 100A. In this embodiment, for example, an opening 26 is provided in the photoelectric conversion layer 24 between unit pixels P adjacent to each other in the X-axis direction. This reduces variations in sensitivity caused by variations in the distribution of charges generated between adjacent unit pixels. Furthermore, in this embodiment, a phase difference detection pixel is configured by arranging an on-chip lens 52 across unit pixels P adjacent to each other in the X-axis direction over the entire surface or part of the pixel section 100A. By providing the opening 26 in the photoelectric conversion layer 24 between unit pixels P across which the on-chip lens 52 configuring this phase difference detection pixel is arranged, variations in sensitivity caused by variations in the distribution of charges generated between adjacent phase difference detection pixels are reduced.

[0188] As described above, in the photodetector 3 of this embodiment, it is possible to improve the photodetection characteristics, similarly to the first embodiment. In particular, as shown in Figures 42A and 42B, in the pixel unit 3a constituting the phase difference detection pixel, it is possible to improve the phase difference detection function among the photodetection characteristics.

[0189] 43 schematically illustrates an example of a planar configuration of the layout of a plurality of unit pixels P of a photodetector (photodetector 3A) according to Modification 11 of the present disclosure. Similar to the photodetector 1 of the first embodiment, the photodetector 3A is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0190] In the third embodiment described above, an example has been shown in which the shield electrode 213 extends between unit pixels P adjacent in the X-axis direction that constitute a phase difference detection pixel, but the present invention is not limited to this. In the photo-detecting device 3A of this modified example, two unit pixels P adjacent in the X-axis direction that constitute a phase difference detection pixel are surrounded by a shield electrode 213, and a drain electrode 218 is disposed between the adjacent unit pixels P that constitute the phase difference detection pixel surrounded by the shield electrode 213. Except for this point, the photo-detecting device 3A has substantially the same configuration as the photo-detecting device 3 of the third embodiment described above.

[0191] As in the fifth and seventh modifications, the drain electrode 218 serves to remove dark current caused by damage to the photoelectric conversion layer 24 when the opening 26 is formed. A voltage (pixel power supply) equivalent to that applied to the readout electrode 211 is applied to the drain electrode 218. This reduces the number of required voltage sources. The drain electrode 218 is formed in the same conductive layer as the readout electrode 211, the storage electrode 212, and the shield electrode 213, and is made of the same conductive material.

[0192] Even with this configuration, the photodetector 3A of this modified example can obtain the same effects as those of the third embodiment.

[0193] (6-2. Modification 12) FIG. 44A is a schematic diagram illustrating a cross-sectional configuration of a photodetector 3B according to Modification 12 of the present disclosure. FIG. 44B is a schematic diagram illustrating an example of the planar configuration of the photodetector 3B illustrated in FIG. 44A, and FIG. 44A illustrates a cross section corresponding to line VII-VII illustrated in FIG. 44B. In the third embodiment described above, the color filter 55 is provided above the photoelectric conversion unit 20 (on the light incident side S1). However, the color filter 55 may be provided, for example, between the photoelectric conversion unit 20 and the photoelectric conversion region 32, as illustrated in FIG. 44A. Except for this point, the photodetector 3B has substantially the same configuration as the photodetector 2 of the third embodiment described above.

[0194] In the photodetector 3B, for example, the color filter 55 has a configuration in which a color filter (red filter 55R) that selectively transmits at least red light (R) and a color filter (blue filter 55B) that selectively transmits at least blue light (B) are arranged diagonally to each other within the pixel unit 2a. The photoelectric conversion layer 24 of the photoelectric conversion unit 20 is configured to selectively absorb light having a wavelength corresponding to green light (G), for example. The photoelectric conversion region 32R selectively absorbs light having a wavelength corresponding to red light (R), and the photoelectric conversion region 32B selectively absorbs light having a wavelength corresponding to blue light (B). This makes it possible to obtain signals corresponding to red light (R), green light (G), or blue light (B) in the photoelectric conversion regions 32 (photoelectric conversion regions 32R and 32B) arranged below the photoelectric conversion unit 20 and the color filters 55R and 55B, respectively. In the photodetector 3B of this modified example, the area of ​​the photoelectric conversion section for each of RGB can be enlarged compared to a photodetector having a general Bayer array, making it possible to improve the S / N ratio.

[0195] 7. Fourth Embodiment Fig. 45A is a schematic diagram illustrating a cross-sectional configuration of a photodetector 4A according to a fourth embodiment of the present disclosure. Fig. 45B is a schematic diagram illustrating an example of a planar configuration of the photodetector 4A illustrated in Fig. 45A, and Fig. 45A illustrates a cross section corresponding to line VIII-VIII illustrated in Fig. 45B. Similar to the photodetector 1 of the first embodiment, the photodetector 4A is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0196] [Configuration of Photodetector] Similar to the photodetector 1 of the first embodiment, the photodetector 4A is a stacked photodetector in which a photoelectric conversion unit 20 and a photoelectric conversion region 32 are stacked. In the pixel section 100A of this photodetector 4A, as shown in Fig. 45B, for example, pixel units 4a each consisting of four pixels (unit pixels P1, P2, P3, and P4) arranged in two rows and two columns are repeated in an array formed in the row and column directions.

[0197] In the photodetector 4A, a color filter 55 that selectively transmits red light (R), green light (G), and blue light (B) is provided for each unit pixel P above the photoelectric conversion unit 20 (on the light incident side S1). Specifically, in a pixel unit 4a consisting of four pixels arranged in two rows and two columns, two color filters (green filters 55G) that selectively transmit green light (G) are arranged diagonally, and two color filters (red filter 55R and blue filter 55B) that selectively transmit red light (R) and blue light (B) are arranged on orthogonal diagonals. In a unit pixel P provided with one of the color filters 55R, 55G, and 55B, the photoelectric conversion unit 20 detects the corresponding color light, for example. That is, in the pixel unit 100A, pixels that detect red light (R), green light (G), and blue light (B) are arranged in a Bayer pattern.

[0198] In the photodetector 4A, light in the visible light region (red light (R), green light (G), and blue light (B)) that passes through the color filter 55 is absorbed by the photoelectric conversion unit 20 of a unit pixel that is provided with any one of the color filters 55R, 55G, and 55B, while other light, such as infrared light (IR), passes through the photoelectric conversion unit 20. The infrared light (IR) that passes through the photoelectric conversion unit 20 is detected in the photoelectric conversion region 32 of the unit pixel that is provided with any one of the color filters 55R, 55G, and 55B, and a signal charge corresponding to the infrared light (IR) is generated. In other words, the photodetector 4A is capable of simultaneously generating both visible light images and infrared light images.

[0199] Furthermore, the photodetector 4A can acquire a visible light image and an infrared light image at the same position in the XZ in-plane direction, thereby enabling high integration in the XZ in-plane direction.

[0200] In the photodetector 4A, a phase difference detection pixel is configured in all or some of the multiple pixel units 4a repeatedly arranged in an array in the pixel section 100A. In the pixel units 4a constituting the phase difference detection pixel, as shown in FIGS. 42A and 42B , for example, the storage electrodes 212 of unit pixels P1 and P2, and unit pixels P3 and P4 adjacent to each other in the X-axis direction have different areas. The unit pixels P1 and P2 (and unit pixels P3 and P4) having the storage electrodes 212 with different areas correspond to specific examples of a "first pixel" and a "second pixel" as an embodiment of the present disclosure. An on-chip lens 52 is disposed in each of the unit pixels P1, P2, P3, and P4 constituting the phase difference detection pixel.

[0201] [Actions and Effects] In this way, in the photodetector 4A, a plurality of pixel units 4a, each of which is composed of four pixels (unit pixels P1, P2, P3, and P4) arranged in, for example, two rows and two columns, are repeatedly arranged in the pixel section 100A. In the present embodiment, in all or some of the plurality of pixel units 4a, for example, the areas of the storage electrodes 212 of the unit pixels P1 and P2 (and the unit pixels P3 and P4) adjacent to each other in the X-axis direction are made different to form phase difference detection pixels, and an opening 26 is provided in each of the photoelectric conversion layers 24 between the adjacent unit pixels P1 and P2 (and the unit pixels P3 and P4). As a result, in the plurality of pixel units 4a constituting the phase difference detection pixels arranged in the pixel section 100A, variation in sensitivity due to variation in distribution of electric charge generated between adjacent phase difference detection pixels is reduced.

[0202] As described above, the photodetector 4A of this embodiment can improve the photodetection characteristics, similar to the first embodiment. In particular, the photodetector 4A of this embodiment can improve the phase difference detection function among the photodetection characteristics.

[0203] Furthermore, in the photodetector 4A of this embodiment, as in the first embodiment, the charge storage layer 23 is formed continuously between the phase difference detection pixels. This allows charge to be shared between the phase difference detection pixels, thereby ensuring a sufficient number of saturation electrons. This makes it possible to achieve both a high dynamic range and improved phase difference detection function.

[0204] 46 schematically illustrates an example of a planar configuration of the layout of a plurality of unit pixels P of a photodetector (photodetector 4B) according to Modification 13 of the present disclosure. Similar to the photodetector 1 of the first embodiment, the photodetector 4B is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0205] In the fourth embodiment, an example was shown in which an octagonal readout electrode 211, for example, is provided approximately in the center of the pixel unit 4a, and the storage electrodes 212 of each of the unit pixels P1, P2, P3, and P4 are arranged to surround the readout electrode 211. However, this is not limited to this. In the photodetector 4B of this modified example, the areas of the storage electrodes 212 of the unit pixels P1 and P2 (and the unit pixels P3 and P4) adjacent to each other in the X-axis direction are made different to form a phase difference detection pixel, and the readout electrode 211 is extended between the unit pixels P1 and P2 and the unit pixels P3 and P4 adjacent to each other in the Y-axis direction. Except for this point, the photodetector 4B has substantially the same configuration as the photodetector 4A of the fourth embodiment.

[0206] Even with this configuration, the photodetector 4B of this modified example can obtain the same effects as those of the fourth embodiment.

[0207] (8-2. Modification 14) Fig. 47A is a schematic diagram illustrating a cross-sectional configuration of a photodetector 4C according to Modification 14 of the present disclosure. Fig. 47B is a schematic diagram illustrating an example of a planar configuration of the photodetector 4C illustrated in Fig. 47A. Like the photodetector 1 of the first embodiment, the photodetector 4C is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0208] In the photodetector 4C of this modified example, in the photodetector 3 described in the third embodiment, in which one readout electrode 211 is provided for each unit pixel P and the insulating layer 22 and the charge storage layer 23 are omitted, the areas of the readout electrodes 211 are made different between unit pixels P1 and P2 adjacent to each other in the X-axis direction, as in the photodetector 4A of the fourth embodiment, thereby forming phase electric detection pixels. An opening 26 is provided in the photoelectric conversion layer 24 between adjacent unit pixels P1 and P2 that form the phase electric detection pixel.

[0209] Even with this configuration, the photodetector 4C of this modified example can obtain the same effects as those of the fourth embodiment.

[0210] (8-3. Modification 15) Fig. 48A is a schematic diagram illustrating a cross-sectional configuration of a photodetector 4D according to Modification 15 of the present disclosure. Fig. 48B is a schematic diagram illustrating an example of a planar configuration of the photodetector 4D illustrated in Fig. 48A. Like the photodetector 1 of the first embodiment, the photodetector 4D is, for example, a CMOS image sensor used in electronic devices such as digital still cameras and video cameras.

[0211] The photodetector 4D of this modification is the photodetector 4C of the above modification 14, in which a drain electrode 218 is further provided between adjacent unit pixels P.

[0212] Even with this configuration, the photodetector 4D of this modified example can obtain the same effects as those of the fourth embodiment.

[0213] 49 is a schematic diagram illustrating an example of a cross-sectional configuration of a photodetector 5 according to another modification of the present disclosure. Similar to the photodetector 1 of the first embodiment, the photodetector 5 is a photodetector element such as a CMOS image sensor used in electronic devices such as digital still cameras and video cameras. The photodetector 5 of this modification has two photoelectric conversion units 20, 60 and one photoelectric conversion region 32 stacked in the vertical direction.

[0214] The photoelectric conversion units 20 and 60 and the photoelectric conversion region 32 selectively detect light in different wavelength ranges and perform photoelectric conversion. For example, the photoelectric conversion unit 20 acquires a green (G) color signal. For example, the photoelectric conversion unit 60 acquires a blue (B) color signal. For example, the photoelectric conversion region 32 acquires a red (R) color signal. This allows the photodetector 5 to acquire multiple types of color signals in one pixel without using color filters.

[0215] The photoelectric conversion unit 60 has a similar configuration to the photoelectric conversion unit 20. Specifically, like the photoelectric conversion unit 20, the photoelectric conversion unit 60 has a lower electrode 61, a photoelectric conversion layer 64, and an upper electrode 65 stacked in this order. The lower electrode 61 is made up of a plurality of electrodes (e.g., a charge readout electrode 611 and a charge storage electrode 612), and an insulating layer 62 and a charge storage layer 63 are stacked in this order between the lower electrode 61 and the photoelectric conversion layer 64. Of the lower electrode 61, the charge readout electrode 611 is electrically connected to the charge storage layer 63 via an opening 62H provided in the insulating layer 62. Note that the charge storage layer 63 may be omitted.

[0216] A through electrode 66 is connected to the charge readout electrode 611. The through electrode 66 penetrates the interlayer insulating layer 67 and the photoelectric conversion unit 20 and is electrically connected to the readout electrode 211 of the photoelectric conversion unit 20. Furthermore, the charge readout electrode 611 is electrically connected to a floating diffusion FD provided in the semiconductor substrate 30 via the through electrodes 34 and 66, and can temporarily store charges generated in the photoelectric conversion layer 64. Furthermore, the charge readout electrode 611 is electrically connected to an amplifier transistor AMP and the like provided in the semiconductor substrate 30 via the through electrodes 34 and 66.

[0217] 50 is a schematic diagram illustrating another example of a cross-sectional configuration of a photodetector 6 according to another modification of the present disclosure. Similar to the photodetector 1 of the first embodiment, the photodetector 5 is a photodetector element such as a CMOS image sensor used in electronic devices such as digital still cameras and video cameras. The photodetector 5 of this modification has two photoelectric conversion units 20, 60 and one photoelectric conversion region 32 stacked in the vertical direction.

[0218] The photodetector 6 of this modified example has the same configuration as the photodetector 5, except that, as described above, the lower electrodes 21, 81 of the photoelectric conversion sections 20, 80 consist of a single electrode, and no insulating layers 22, 82 are provided between the lower electrodes 21, 81 and the charge storage layers 23, 83.

[0219] As in the first embodiment, the photodetector devices 5 and 6 of this modification have openings in the photoelectric conversion layers 24 and 64 between adjacent unit pixels, respectively, thereby reducing variations in sensitivity caused by variations in the distribution of electric charges generated between adjacent unit pixels. Thus, the photodetector devices 5 and 6 of this modification can improve their photodetection characteristics.

[0220] 10. Application Examples (Application Example 1) The light detection device 1 as described above can be applied to various electronic devices, such as imaging systems such as digital still cameras and digital video cameras, mobile phones with imaging functions, and other devices with imaging functions.

[0221] FIG. 51 is a block diagram showing an example of the configuration of electronic device 1000.

[0222] As shown in Figure 51, electronic device 1000 includes an optical system 1001, a photodetector 1, and a DSP (Digital Signal Processor) 1002, and is configured by connecting DSP 1002, memory 1003, display device 1004, recording device 1005, operation system 1006, and power supply system 1007 via a bus 1008, and is capable of capturing still images and moving images.

[0223] The optical system 1001 is configured to have one or more lenses, and receives incident light (image light) from a subject and forms an image on the imaging surface of the photodetector 1 .

[0224] The above-described photodetector 1 is applied as the photodetector 1. The photodetector 1 converts the amount of incident light imaged on the imaging surface by the optical system 1001 into an electrical signal on a pixel-by-pixel basis and supplies the signal to the DSP 1002 as a pixel signal.

[0225] The DSP 1002 performs various signal processing on the signal from the photodetector 1 to acquire an image, and temporarily stores the image data in the memory 1003. The image data stored in the memory 1003 is recorded in the recording device 1005 or supplied to the display device 1004 to display the image. In addition, the operation system 1006 accepts various operations by the user and supplies operation signals to each block of the electronic device 1000, and the power supply system 1007 supplies the power necessary to drive each block of the electronic device 1000.

[0226] (Application Example 2) Fig. 52A is a schematic diagram showing an example of the overall configuration of a light detection system 2000 including the light detection device 1. Fig. 52B is a diagram showing an example of the circuit configuration of the light detection system 2000. The light detection system 2000 includes a light emitting device 2001 as a light source unit that emits infrared light L2, and a light detection device 2002 as a light receiving unit having a light detection element. The light detection device 1 described above can be used as the light detection device 2002. The light detection system 2000 may further include a system control unit 2003, a light source driving unit 2004, a sensor control unit 2005, a light source side optical system 2006, and a camera side optical system 2007.

[0227] The photodetector 2002 can detect light L1 and light L2. Light L1 is external ambient light reflected by the object (measurement target) 2100 ( FIG. 52A ). Light L2 is light emitted by the light-emitting device 2001 and then reflected by the object 2100. Light L1 is, for example, visible light, and light L2 is, for example, infrared light. Light L1 can be detected by a photoelectric conversion unit in the photodetector 2002, and light L2 can be detected by a photoelectric conversion region in the photodetector 2002. Image information of the object 2100 can be obtained from light L1, and distance information between the object 2100 and the photodetector system 2000 can be obtained from light L2. The photodetector system 2000 can be installed in, for example, an electronic device such as a smartphone or a mobile object such as a car. The light-emitting device 2001 can be configured, for example, by a semiconductor laser, a surface-emitting semiconductor laser, or a vertical-cavity surface-emitting laser (VCSEL). The method of detecting the light L2 emitted from the light-emitting device 2001 by the photodetector 2002 can be, for example, an iTOF method, but is not limited to this. In the iTOF method, the photoelectric conversion unit can measure the distance to the subject 2100, for example, by using the time-of-flight (TOF) of light. The method of detecting the light L2 emitted from the light-emitting device 2001 by the photodetector 2002 can also be, for example, a structured light method or a stereo vision method. For example, in the structured light method, a predetermined pattern of light is projected onto the subject 2100, and the distance between the photodetector system 2000 and the subject 2100 can be measured by analyzing the distortion of the pattern. In addition, in the stereo vision method, for example, two or more cameras are used to acquire two or more images of the subject 2100 viewed from two or more different viewpoints, thereby measuring the distance between the photodetector system 2000 and the subject. The light emitting device 2001 and the light detecting device 2002 can be controlled synchronously by a system control unit 2003 .

[0228] 11. Application Example Application Example to Endoscopic Surgery System The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0229] FIG. 53 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0230] Figure 53 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0231] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the example shown, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

[0232] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0233] An optical system and an image sensor are provided inside the camera head 11102, and light reflected from the object of observation (observation light) is collected onto the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to a camera control unit (CCU) 11201 as RAW data.

[0234] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0235] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0236] The light source device 11203 is composed of a light source such as an LED (light emitting diode), and supplies irradiation light to the endoscope 11100 when photographing the surgical site, etc.

[0237] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0238] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 inflates the body cavity of the patient 11132 through the insufflation tube 11111 in order to ensure a clear field of view for the endoscope 11100 and a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0239] The light source device 11203, which supplies illumination light to the endoscope 11100 when photographing the surgical site, can be configured from a white light source, such as an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, allowing the light source device 11203 to adjust the white balance of the captured image. In this case, it is also possible to time-share images corresponding to each RGB by irradiating the object of observation with laser light from each RGB laser light source and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, color images can be obtained without providing a color filter to the image sensor.

[0240] Furthermore, the light source device 11203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free from so-called blocked-up shadows and blown-out highlights.

[0241] The light source device 11203 may also be configured to supply light in a predetermined wavelength range compatible with special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light with a narrower band than the light irradiated during normal observation (i.e., white light), thereby capturing high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, known as narrow-band imaging. Alternatively, special light observation may involve fluorescence observation, in which images are obtained using fluorescence generated by irradiating excitation light. Fluorescence observation can involve irradiating excitation light onto body tissues and observing the fluorescence from the tissues (autofluorescence observation), or by locally injecting a reagent such as indocyanine green (ICG) into the body tissue and irradiating the tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light compatible with such special light observation.

[0242] FIG. 54 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0243] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0244] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

[0245] The imaging unit 11402 may include one imaging element (a so-called single-chip type) or multiple imaging elements (a so-called multi-chip type). When the imaging unit 11402 is configured as a multi-chip type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to a 3D (dimensional) display. The 3D display allows the surgeon 11131 to more accurately grasp the depth of the biological tissue at the surgical site. Note that when the imaging unit 11402 is configured as a multi-chip type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0246] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

[0247] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

[0248] The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0249] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0250] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0251] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404 .

[0252] The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0253] Furthermore, the communication unit 11411 transmits to the camera head 11102 a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0254] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102 .

[0255] The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0256] Furthermore, the control unit 11413 displays the captured image showing the surgical site, etc., on the display device 11202 based on the image signal subjected to image processing by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition results to superimpose various surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0257] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for electrical signal communication, an optical fiber for optical communication, or a composite cable of these.

[0258] In the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0259] The above describes an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the imaging unit 11402 among the components described above. By applying the technology according to the present disclosure to the imaging unit 11402, detection accuracy is improved.

[0260] Although an endoscopic surgery system has been described as an example here, the technology according to the present disclosure may also be applied to other systems, such as a microsurgery system.

[0261] (Application Example to Mobile Object) The technology according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile object, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, a robot, construction machinery, or agricultural machinery (tractor).

[0262] FIG. 55 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology of the present disclosure can be applied.

[0263] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 55, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0264] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0265] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0266] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0267] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0268] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0269] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0270] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0271] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0272] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 55, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0273] FIG. 56 is a diagram showing an example of the installation position of the imaging unit 12031.

[0274] In FIG. 56, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0275] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0276] 56 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0277] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0278] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0279] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0280] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0281] The foregoing has described an example of a mobile object control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the image capture unit 12031 of the above-described configuration. Specifically, the photodetection devices according to the first to fourth embodiments and their modifications 1 to 15 (e.g., photodetection device 1) can be applied to the image capture unit 12031. By applying the technology according to the present disclosure to the image capture unit 12031, it is possible to obtain high-resolution captured images with little noise, thereby enabling high-precision control using the captured images in the mobile object control system.

[0282] Although the present technology has been described above with reference to the first to fourth embodiments, the first to fifteenth modifications, and application examples, the present disclosure is not limited to the above-described embodiments, etc., and various modifications are possible. For example, while the above-described embodiments, etc., show examples in which electrons are read out from the lower electrode 21 as signal charges, the present disclosure is not limited to this, and holes may be read out from the lower electrode 21 as signal charges.

[0283] Furthermore, in the second embodiment and the like, an example in which the color filter 55 is provided is shown, but the color filter 55 may be omitted as appropriate.

[0284] Furthermore, the number and ratio of photoelectric conversion units made of organic materials and photoelectric conversion regions made of inorganic materials are not limited.Furthermore, the photoelectric conversion units made of organic materials and photoelectric conversion regions made of inorganic materials are not limited to a structure in which they are stacked vertically, and they may be arranged in parallel along the substrate surface.

[0285] Furthermore, in the above-described embodiments, the configuration of a back-illuminated photodetector has been exemplified, but the present disclosure can also be applied to a front-illuminated photodetector.

[0286] Furthermore, the photodetector 1 etc. disclosed herein does not need to include all of the components described in the above embodiments etc., and conversely, may include other components. For example, the photodetector 1 may be provided with a shutter for controlling the incidence of light, or may be provided with an optical cut filter depending on the purpose of the photodetector 1. Furthermore, the arrangement of the pixels (Pr, Pg, Pb) that detect red light (R), green light (G), and blue light (B) may be an interline arrangement, a G-stripe RB checkerboard arrangement, a G-stripe RB complete checkerboard arrangement, a checkerboard complementary color arrangement, a stripe arrangement, a diagonal stripe arrangement, a primary color color difference arrangement, a field color difference sequential arrangement, a frame color difference sequential arrangement, a MOS type arrangement, an improved MOS type arrangement, a frame interleaved arrangement, or a field interleaved arrangement, in addition to the Bayer arrangement.

[0287] The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0288] The present technology may also be configured as follows. According to the present technology configured as follows, variations in sensitivity due to variations in distribution of charges generated between a first pixel and a second pixel to the first pixel and the second pixel are eliminated, thereby improving photodetection characteristics. (1) A photodetector including: first and second pixels arranged in parallel and generating signals for phase difference detection; a photoelectric conversion layer provided across the first and second pixels; and an opening in which at least a portion of the photoelectric conversion layer is removed between the first and second pixels. (2) The photodetector according to (1), further including: a plurality of first electrodes provided in the first pixel and the second pixel, respectively; a second electrode arranged opposite the plurality of first electrodes with the photoelectric conversion layer interposed therebetween; and a charge accumulation layer provided between the plurality of first electrodes and the photoelectric conversion layer and capable of accumulating charges generated by photoelectric conversion. (3) The photodetector according to (2), wherein the charge accumulation layer is formed continuously in the first pixel and the second pixel. (4) The photodetector according to (2) or (3), further comprising a control electrode provided between the first pixel and the second pixel and controlling transfer of charges accumulated in the first pixel and the second pixel. (5) The photodetector according to any one of (2) to (4), further comprising a third electrode arranged near the plurality of first electrodes provided in the first pixel and the second pixel, shared by the first pixel and the second pixel, and transferring charges accumulated in the first pixel and the second pixel to a floating diffusion. (6) The photodetector according to (5), further comprising a transfer electrode provided between the third electrode and the plurality of first electrodes provided in the first pixel and the second pixel, respectively, and controlling transfer of charges accumulated in the first pixel and the second pixel to the third electrode. (7) The photodetector according to any one of (2) to (6), further comprising a discharge electrode provided between the first pixel and the second pixel, for discharging charges accumulated in the first pixel and the second pixel.(8) The photodetector according to any one of (1) to (7), further comprising a microlens disposed across the first pixel and the second pixel. (9) The photodetector according to any one of (1) to (8), further comprising a plurality of first electrodes provided in the first pixel and the second pixel, respectively, and having areas different from those of the plurality of first electrodes provided in the first pixel and the second pixel, respectively. (10) The photodetector according to any one of (1) to (9), further comprising a plurality of microlenses disposed in the first pixel and the second pixel, respectively. (11) The photodetector according to any one of (1) to (10), wherein a sidewall of the photoelectric conversion layer separated by the opening has a tapered shape. (12) The photodetector according to any one of (1) to (11), wherein an insulating film having a refractive index of 1.5 or more and 2.5 or less is embedded in the opening. (13) The photodetector according to any one of (1) to (12), wherein the opening has a bottom surface within the photoelectric conversion layer. (14) The photodetector according to any one of (1) to (13), wherein the side and bottom surfaces of the opening are protected by a sealing film. (15) The photodetector according to any one of (1) to (14), further comprising a reflective film on the bottom surface of the opening. (16) The photodetector according to any one of (1) to (15), further comprising an etching stopper film on the bottom surface of the opening. (17) The photodetector according to any one of (1) to (16), further comprising a waveguide above the opening.(18) A photodetector comprising: a plurality of pixels, a first electrode provided in each of the plurality of pixels, a second electrode arranged opposite the first electrode and provided in each of the plurality of pixels or across the plurality of pixels, a photoelectric conversion layer arranged between the first electrode and the second electrode and provided across the plurality of pixels, an opening by removing at least a portion of the photoelectric conversion layer between the plurality of adjacent pixels, and a charge storage layer provided between the first electrode and the photoelectric conversion layer and provided across the plurality of pixels, the charge storage layer being capable of storing charge generated by photoelectric conversion. (19) The photodetector according to (18), further comprising an insulating layer between the plurality of first electrodes and the charge storage layer, wherein the first electrode includes a charge readout electrode and a charge storage electrode arranged in parallel and spaced apart from each other.

[0289] This application claims priority based on Japanese Patent Application No. 2024-099013, filed on June 19, 2024, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0290] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

a first pixel and a second pixel arranged in parallel to generate a signal for detecting a phase difference; a photoelectric conversion layer provided across the first pixel and the second pixel; an opening portion where at least a portion of the photoelectric conversion layer is removed between the first pixel and the second pixel; A photodetector comprising: 　 a plurality of first electrodes provided in the first pixel and the second pixel, respectively; a second electrode disposed opposite the plurality of first electrodes with the photoelectric conversion layer interposed therebetween; The photodetector according to claim 1 , further comprising a charge storage layer provided between the plurality of first electrodes and the photoelectric conversion layer, the charge storage layer being capable of storing charges generated by photoelectric conversion. 　 The photodetector device according to claim 2 , wherein the charge storage layer is formed continuously in the first pixel and the second pixel.

3. The photodetector device according to claim 2, further comprising a control electrode provided between the first pixel and the second pixel, the control electrode controlling transfer of charges accumulated in the first pixel and the second pixel.

3. The photodetection device according to claim 2, further comprising a third electrode that is arranged near the plurality of first electrodes provided in the first pixel and the second pixel, that is shared by the first pixel and the second pixel, and that transfers charges accumulated in the first pixel and the second pixel to a floating diffusion.

6. The photodetector according to claim 5, further comprising a transfer electrode provided between the third electrode and the plurality of first electrodes provided in the first pixel and the second pixel, respectively, for controlling transfer of charges accumulated in the first pixel and the second pixel to the third electrode.

3. The photodetector device according to claim 2, further comprising a discharge electrode provided between the first pixel and the second pixel, for discharging charges accumulated in the first pixel and the second pixel. 　 The photodetector device according to claim 1 , further comprising a microlens disposed across the first pixel and the second pixel. 　 The pixel electrode further includes a plurality of first electrodes provided in the first pixel and the second pixel, The photodetector according to claim 1 , wherein the first electrodes provided in the first pixel and the second pixel have different areas. 　 The photodetector device according to claim 1 , further comprising a plurality of microlenses disposed in the first pixel and the second pixel, respectively. 　 The photodetector according to claim 1 , wherein a sidewall of the photoelectric conversion layer separated by the opening has a tapered shape.

2. The photodetector according to claim 1, wherein the opening is filled with an insulating film having a refractive index of 1.5 or more and 2.5 or less. 　 The photodetector according to claim 1 , wherein the opening has a bottom surface within the photoelectric conversion layer. 　 The photodetector according to claim 1 , wherein the side and bottom surfaces of the opening are protected by a sealing film. 　 The photodetector according to claim 1 , further comprising a reflective film on a bottom surface of the opening.

2. The photodetector according to claim 1, further comprising an etching stopper film on a bottom surface of said opening. 　 The photodetector device of claim 1 further comprising a waveguide above the opening. 　 A plurality of pixels; a first electrode provided in each of the plurality of pixels; a second electrode disposed opposite the first electrode and provided for each of the plurality of pixels or across the plurality of pixels; a photoelectric conversion layer disposed between the first electrode and the second electrode and provided across the plurality of pixels; an opening portion that removes at least a portion of the photoelectric conversion layer between the plurality of adjacent pixels; a charge storage layer provided between the first electrode and the photoelectric conversion layer and extending across the plurality of pixels, the charge storage layer being capable of storing charges generated by photoelectric conversion; A photodetector comprising: 　 an insulating layer between the plurality of first electrodes and the charge storage layer; The photodetector device according to claim 18 , wherein the first electrode includes a charge readout electrode and a charge storage electrode arranged in parallel and spaced apart from each other.

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