Photodetector

Abstract

This photodetector comprises a semiconductor structure having: an effective region in which a plurality of photodetection elements for detecting irradiation light and performing photoelectric conversion are provided; and an adjacent region adjacent to the effective region. The semiconductor structure includes: an organic photoelectric conversion layer extending from the effective region to the adjacent region; a sealing layer disposed in the adjacent region, having a first sealing film including an end edge located at a boundary between the effective region and the adjacent region, and covering the organic photoelectric conversion layer; and a first light shielding layer disposed in the first sealing film of the sealing layer and extending from a position of the end edge toward the adjacent region.

Description

Photodetector

[0001] The present disclosure relates to a photodetector including a photoelectric conversion element that performs photoelectric conversion.

[0002] To date, an imaging element has been proposed as a photodetector including an organic photoelectric conversion layer that receives visible light and performs photoelectric conversion, and a sealing layer that includes a recess in the effective pixel area (see, for example, Patent Document 1). The imaging element of Patent Document 1 can reduce stress applied to the organic photoelectric conversion layer. It also improves oblique incidence characteristics while maintaining sealing and light-shielding properties.

[0003] International Publication No. 2017 / 169231

[0004] However, there is a demand for further improvements in the operational performance of photodetectors.

[0005] It is therefore desirable to provide a photodetector device that can exhibit excellent operational performance.

[0006] According to one embodiment of the present disclosure, a photodetector device includes a semiconductor structure having an effective area in which a plurality of photodetection elements are provided, each of which detects irradiated light and performs photoelectric conversion, and an adjacent area adjacent to the effective area. The semiconductor structure includes an organic photoelectric conversion layer extending from the effective area to the adjacent area, a sealing layer provided in the adjacent area and having a first sealing film including an edge located at the boundary between the effective area and the adjacent area, the sealing layer covering the organic photoelectric conversion layer, and a first light-shielding layer provided on the first sealing film of the sealing layer and extending from the edge toward the adjacent area.

[0007] In a photodetector according to an embodiment of the present disclosure, by increasing the thickness of the first sealing film, which occupies the adjacent region of the sealing layer, stress applied to the organic photoelectric conversion layer due to the provision of a metal layer in the adjacent region is alleviated. Furthermore, because the first sealing film is not provided in the active region, light intended for a given photodetection element can be prevented from unintentionally entering another photodetection element adjacent to the photodetection element. Furthermore, because the first light-shielding layer is provided in the first sealing film and extends from the edge of the boundary between the active region and the adjacent region toward the adjacent region, unwanted light is prevented from entering the adjacent region and deterioration of the organic photoelectric conversion layer during manufacturing is suppressed.

[0008] FIG. 1A is a schematic diagram illustrating an example of a photodetector according to a first embodiment of the present disclosure. FIG. 1B is an explanatory diagram schematically illustrating an example of a configuration of a pixel unit and its peripheral portion illustrated in FIG. 1A. FIG. 2 is a vertical cross-sectional view illustrating an example of a schematic configuration of an imaging element applied to the pixel unit illustrated in FIG. 1A. FIG. 3A is a first schematic cross-sectional view illustrating a method for manufacturing the photodetector illustrated in FIG. 1A. FIG. 3B is a second schematic cross-sectional view illustrating a method for manufacturing the photodetector illustrated in FIG. 1A. FIG. 3C is a third schematic cross-sectional view illustrating a method for manufacturing the photodetector illustrated in FIG. 1A. FIG. 3D is a fourth schematic cross-sectional view illustrating a method for manufacturing the photodetector illustrated in FIG. 1A. FIG. 3E is a fifth schematic cross-sectional view illustrating a method for manufacturing the photodetector illustrated in FIG. 1A. FIG. 3F is a sixth schematic cross-sectional view illustrating a method for manufacturing the photodetector illustrated in FIG. 1A. FIG. 3G is a seventh schematic cross-sectional view illustrating a method for manufacturing the photodetector illustrated in FIG. 1A. FIG. 3H is an eighth schematic cross-sectional view illustrating a method for manufacturing the photodetector illustrated in FIG. 1A. FIG. 4 is a cross-sectional view schematically illustrating an example of a configuration of an image sensor as a first modified example of the first embodiment, which is applied to the pixel section shown in FIG. 1A. FIG. 5 is a cross-sectional view schematically illustrating an example of a configuration of an image sensor as a second modified example of the first embodiment, which is applied to the pixel section shown in FIG. 1A. FIG. 6 is a cross-sectional view schematically illustrating an example of a configuration of an image sensor as a third modified example of the first embodiment, which is applied to the pixel section shown in FIG. 1A. FIG. 7 is a cross-sectional view schematically illustrating an example of a configuration of an image sensor as a fourth modified example of the first embodiment, which is applied to the pixel section shown in FIG. 1A. FIG. 8 is a cross-sectional view schematically illustrating an example of a configuration of an image sensor as a fifth modified example of the first embodiment, which is applied to the pixel section shown in FIG. 1A. FIG. 9A is a first cross-sectional view schematically illustrating a method for manufacturing the image sensor shown in FIG. 8. FIG. 9B is a second cross-sectional view schematically illustrating a method for manufacturing the image sensor shown in FIG. 8. FIG. 9C is a third cross-sectional view schematically illustrating a method for manufacturing the image sensor shown in FIG. 8. FIG. 9D is a fourth cross-sectional view schematically illustrating a method for manufacturing the image sensor shown in FIG. 8. Fig. 9E is a fifth schematic cross-sectional view illustrating a method for manufacturing the image sensor shown in Fig. 8. Fig. 9F is a sixth schematic cross-sectional view illustrating a method for manufacturing the image sensor shown in Fig. 8.9G is a seventh schematic cross-sectional view illustrating a method for manufacturing the imaging element shown in FIG. 8. FIG. 9H is an eighth schematic cross-sectional view illustrating a method for manufacturing the imaging element shown in FIG. 8. FIG. 10 is a schematic cross-sectional view illustrating an example of a schematic configuration of an imaging element as a sixth modified example of the first embodiment applied to the pixel unit shown in FIG. 1A. FIG. 11 is a schematic cross-sectional view illustrating an example of a schematic configuration of an imaging element as a seventh modified example of the first embodiment applied to the pixel unit shown in FIG. 1A. FIG. 12 is a schematic cross-sectional view illustrating an example of a schematic configuration of an imaging element as an eighth modified example of the first embodiment applied to the pixel unit shown in FIG. 1A. FIG. 13 is a schematic cross-sectional view illustrating an example of a schematic configuration of an imaging element as a ninth modified example of the first embodiment applied to the pixel unit shown in FIG. 1A. FIG. 14A is a schematic diagram illustrating an example of the overall configuration of a light detection system according to a second embodiment of the present disclosure. FIG. 14B is a schematic diagram illustrating an example of a circuit configuration of the light detection system shown in FIG. 14A. FIG. 15 is a schematic diagram illustrating an example of the overall configuration of an electronic device. FIG. 16 is a block diagram illustrating an example of a schematic configuration of a vehicle control system. FIG. 17 is an explanatory diagram showing an example of the installation positions of the outside-of-vehicle information detection unit and the imaging unit.

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order: 1. First embodiment An example of a photodetection device in which a light-shielding layer is arranged in a peripheral region surrounding a pixel unit in which a plurality of vertically spectroscopic photodetection elements are provided. 2. Modification of the first embodiment 3. Second embodiment An example of a photodetection system including a light-emitting device and a photodetection device 4. Example of application to electronic devices 5. Example of application to mobile objects

[0010] 1. First Embodiment [1-1. Configuration] (Overall Configuration Example) FIG. 1A illustrates an overall configuration example of a photodetector 1 according to an embodiment of the present disclosure. The photodetector 1 is, for example, a complementary metal oxide semiconductor (CMOS) image sensor. The photodetector 1 captures incident light (image light) from a subject via, for example, an optical lens system, converts the incident light imaged on an imaging surface into an electrical signal on a pixel-by-pixel basis, and outputs the electrical signal as a pixel signal. The photodetector 1 includes, for example, a pixel unit 100 as an imaging area on a semiconductor substrate 11, and a vertical drive circuit 111, a column signal processing circuit 112, a horizontal drive circuit 113, an output circuit 114, a control circuit 115, and input / output terminals 116 arranged in a peripheral region of the pixel unit 100. The photodetector 1 corresponds to a specific example of one embodiment of a "photodetector" according to the present disclosure.

[0011] FIG. 1B schematically illustrates an exemplary configuration of a pixel unit. As shown in FIG. 1B, the pixel unit 100 includes, for example, an effective region 100R1 and a peripheral region 100R2. The effective region 100R1 includes, for example, a plurality of pixels PX (see FIG. 1A) arranged two-dimensionally in a matrix. The peripheral region 100R2 is provided adjacent to the effective region 100R1, for example, so as to surround the periphery of the effective region 100R1. The effective region 100R1 and the peripheral region 100R2 correspond to specific examples of an embodiment of the "effective region" and "adjacent region" of the present disclosure, respectively.

[0012] The effective region 100R1 of the pixel unit 100 includes a plurality of pixel rows each consisting of a plurality of pixels PX arranged in the horizontal direction (the horizontal direction on the paper) and a plurality of pixel columns each consisting of a plurality of pixels P arranged in the vertical direction (the vertical direction on the paper). The pixel unit 100 includes, for example, one pixel drive line Lread (a row selection line and a reset control line) for each pixel row and one vertical signal line Lsig for each pixel column. The pixel drive line Lread transmits drive signals for reading signals from each pixel PX. The ends of the plurality of pixel drive lines Lread are connected to a plurality of output terminals of the vertical drive circuit 111, each corresponding to one pixel row.

[0013] The vertical drive circuit 111 is configured with a shift register, an address decoder, etc., and is a pixel drive unit that drives each pixel PX in the pixel unit 100, for example, in units of pixel rows. Signals output from each pixel PX in a pixel row selected and scanned by the vertical drive circuit 111 are supplied to a column signal processing circuit 112 through each vertical signal line Lsig.

[0014] The column signal processing circuit 112 is composed of an amplifier, a horizontal selection switch, and the like, which are provided for each vertical signal line Lsig.

[0015] The horizontal drive circuit 113 is configured with a shift register, an address decoder, etc., and scans and sequentially drives each horizontal selection switch of the column signal processing circuit 112. By selective scanning by this horizontal drive circuit 113, signals of each pixel P transmitted through each of the multiple vertical signal lines Lsig are output in sequence to a horizontal signal line 121, and are transmitted to the outside via the horizontal signal line 121.

[0016] The output circuit 114 processes and outputs signals sequentially supplied from each of the column signal processing circuits 112 via the horizontal signal line 121. The output circuit 114 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like, for example.

[0017] The circuit portion consisting of the vertical drive circuit 111, the column signal processing circuit 112, the horizontal drive circuit 113, the horizontal signal line 121, and the output circuit 114 may be formed directly on the semiconductor substrate 11, or may be disposed on an external control IC. Furthermore, these circuit portions may be formed on another substrate connected by a cable or the like.

[0018] The control circuit 115 receives a clock and data instructing an operation mode from outside the semiconductor substrate 11, and outputs data such as internal information of the pixels P, which are image pickup elements. The control circuit 115 further has a timing generator that generates various timing signals, and controls the driving of peripheral circuits such as the vertical drive circuit 111, the column signal processing circuit 112, and the horizontal drive circuit 113 based on the various timing signals generated by the timing generator.

[0019] The input / output terminal 116 is used to exchange signals with the outside.

[0020] (Example of Cross-Sectional Configuration of Pixel Unit 100) The pixel unit 100 includes a semiconductor structure S1 having an effective region 100R1 and a peripheral region 100R2. FIG. 2 schematically illustrates an example of a vertical cross-sectional configuration along the thickness direction of a portion of the semiconductor structure S1 constituting the pixel unit 100. FIG. 2 corresponds to a cross section taken along line II-II in FIG. 1B , as viewed from the arrows. FIG. 2 illustrates two pixels PX1 and PX2 among the multiple pixels PX arranged in a matrix in the pixel unit 100. In FIG. 2, the thickness direction (stacking direction) of the pixel PX is defined as the Z-axis direction, and the plane directions parallel to the stacking plane perpendicular to the Z-axis direction are defined as the X-axis direction and the Y-axis direction. Note that the X-axis direction, the Y-axis direction, and the Z-axis direction are perpendicular to one another. The pixel PX detects incident light and performs photoelectric conversion. In other words, the pixel PX corresponds to a specific example of one embodiment of the "photodetector" of the present disclosure.

[0021] As shown in FIG. 2 , the semiconductor structure S1 is a so-called vertical spectroscopic imaging element. That is, the semiconductor structure S1 has a structure in which a first photodetector 10 capable of detecting light in a first wavelength range and a second photodetector 20 capable of detecting light in a second wavelength range are stacked in the Z-axis direction, which is the thickness direction. Here, the light in the first wavelength range is, for example, infrared light, and the light in the second wavelength range is visible light with a wavelength shorter than that of infrared light. The semiconductor structure S1 further includes an intermediate layer 40 provided between the first photodetector 10 and the second photodetector 20. Furthermore, the semiconductor structure S1 includes an organic photoelectric conversion layer 22, a sealing layer 50, and a first light-shielding layer 61, as will be described in detail later.

[0022] (First optical detection unit 10) The first optical detection unit 10 is, for example, an indirect TOF (hereinafter referred to as iTOF) sensor that acquires a distance image (distance information) by optical time-of-flight (TOF). The first optical detection unit 10 has, for example, a semiconductor substrate 11 and a photoelectric conversion region 12.

[0023] The semiconductor substrate 11 is, for example, an n-type silicon (Si) substrate, and has a p-well in a predetermined region. A fine uneven structure (RIG structure) may be formed on the surface facing the intermediate layer 40. This is because it is effective in confining light having a wavelength in the infrared light region (e.g., wavelengths of 880 nm or more and 1040 nm or less) as the second wavelength region that is incident on the semiconductor substrate 11 within the semiconductor substrate 11. Wiring 64 is provided on the semiconductor substrate 11.

[0024] The photoelectric conversion region 12 is a photoelectric conversion element configured, for example, by a PIN (Positive Intrinsic Negative) type photodiode (PD), and includes a pn junction formed in a predetermined region of the semiconductor substrate 11. The photoelectric conversion region 12 detects and receives light from the subject, particularly light having a wavelength in the infrared light region, and generates and accumulates electric charges according to the amount of received light through photoelectric conversion. In the example shown in FIG. 2, one photoelectric conversion region 12 is provided in common for two pixels PX1 and PX2.

[0025] (Intermediate Layer 40) The intermediate layer 40 may include, for example, an insulating layer 41 and an optical filter 42. The optical filter 42 is embedded in the insulating layer 41. The intermediate layer 40 may further include an inter-pixel region light-shielding wall 43 that blocks light having a wavelength in the infrared light region (e.g., wavelengths of 880 nm or more and 1040 nm or less) as a second wavelength region. Similar to the inter-pixel region light-shielding wall 16, the inter-pixel region light-shielding wall 43 suppresses oblique incidence of unnecessary light into the photoelectric conversion region 12 between adjacent pixels PX and prevents color mixing. The insulating layer 41 may be, for example, a single layer film made of one type of inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiON), or a stacked film made of two or more types of these materials. Furthermore, organic insulating materials such as polymethyl methacrylate (PMMA), polyvinylphenol (PVP), polyvinyl alcohol (PVA), polyimide, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, N-2(aminoethyl)3-aminopropyltrimethoxysilane (AEAPTMS), 3-mercaptopropyltrimethoxysilane (MPTMS), tetraethoxysilane (TEOS), and octadecyltrichlorosilane (OTS) may also be used as materials for the insulating layer 41. A wiring layer M is embedded in the insulating layer 41, including various wirings made of transparent conductive materials and connected to the charge storage electrodes 25 (described later). The inter-pixel region light-shielding wall 43 is composed of a material that primarily blocks light in the infrared region, such as a single layer film made of one type of inorganic insulating material, such as silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON), or a laminate film made of two or more of these materials.

[0026] The optical filter 42 has a transmission band in the infrared light range where photoelectric conversion occurs in the photoelectric conversion region 12. That is, the optical filter 42 transmits light having wavelengths in the infrared light range more easily than light having wavelengths in the visible light range (e.g., wavelengths of 400 nm to 700 nm) as a first wavelength range, i.e., visible light. Specifically, the optical filter 42 can be made of, for example, an organic material, and is configured to selectively transmit light in the infrared light range while absorbing at least a portion of light having wavelengths in the visible light range. The optical filter 42 is made of, for example, an organic material such as a phthalocyanine derivative. Furthermore, the multiple optical filters 42 provided in the pixel unit 100 may have substantially the same shape and size.

[0027] A SiN layer 44 may be provided on the front surface of the optical filter 42, i.e., the surface facing the first optical detection unit 10. Furthermore, a SiN layer 45 may be provided on the back surface of the optical filter 42, i.e., the surface facing the second optical detection unit 20.

[0028] In the intermediate layer 40, a multilayer wiring 40M is provided between the optical filter 42 and the second photodetector 20. The intermediate layer 40 is provided with a through electrode 17 that connects the multilayer wiring 40M in the Z-axis direction. The lower end of the through electrode 17 is connected to a charge-voltage converter provided in the semiconductor substrate 11. The charge-voltage converter is a floating diffusion region that converts charges generated in and transferred from the photoelectric conversion region 12 into an electrical signal (e.g., a voltage signal) and outputs the electrical signal.

[0029] (Second Optical Detection Unit 20) The second optical detection unit 20 includes, for example, a readout electrode 26, a semiconductor layer 21, an organic photoelectric conversion layer 22, and an upper electrode 23, which are stacked in this order from the position closest to the first optical detection unit 10. The second optical detection unit 20 further includes an insulating layer 24 provided below the semiconductor layer 21 and a charge storage electrode 25 provided to face the semiconductor layer 21 with the insulating layer 24 interposed therebetween. The charge storage electrode 25 and the readout electrode 26 are spaced apart from each other and are provided, for example, in the same layer. The charge storage electrode 25 and the readout electrode 26 may be provided, for example, in the uppermost layer of the insulating layer 41 of the intermediate layer 40. The readout electrode 26 is in contact with the upper end of the through electrode 17.

[0030] The second optical detection unit 20 is provided with a sealing layer 50, a first light-shielding layer 61, a second light-shielding layer 62, and a third light-shielding layer 63. The upper electrode 23 is provided between the organic photoelectric conversion layer 22 and the sealing layer 50. The upper electrode 23 corresponds to a specific example of an embodiment of a "first electrode" in the present disclosure. The readout electrode 26 is provided on the opposite side of the upper electrode 23 from the organic photoelectric conversion layer 22. The readout electrode 26 corresponds to a specific example of an embodiment of a "second electrode" in the present disclosure. In the example shown in FIG. 2 , the upper electrode 23 of the second optical detection unit 20 is electrically connected to the second light-shielding layer 62 via a contact portion 65. The second light-shielding layer 62 is connected to the wiring 64 at a contact portion 66. That is, the upper electrode 23 of the second optical detection unit 20 is connected to the wiring 64 via the second light-shielding layer 62 in the peripheral region 100R2. 2 illustrates an example in which the second light-shielding layer 62, the contact portion 65, and the contact portion 66 are integrally formed. The contact portion 66 extends in the Z-axis direction, penetrating through the first sealing film 51 (described later) of the sealing layer 50 and the intermediate layer 40, and reaching the wiring 64 embedded in the semiconductor substrate 11. The upper electrode 23, the organic photoelectric conversion layer 22, and the semiconductor layer 21 may each be provided in common to some of the multiple pixels PX ( FIG. 2 ) in the pixel unit 100, or may be provided in common to all of the multiple pixels PX in the pixel unit 100. The same applies to the modified examples described below.

[0031] The second optical detection unit 20 further includes a plurality of color filters 54, a plurality of inter-pixel light-shielding walls 55, a lens layer 56, and an anti-reflection film 57. One color filter 54 is provided for each pixel PX. The plurality of color filters 54 include, for example, a color filter that primarily transmits red light, a color filter that primarily transmits green light, and a color filter that primarily transmits blue light. The plurality of inter-pixel light-shielding walls 55 are provided at the boundaries between adjacent color filters 54 and have a refractive index lower than that of the color filters 54. The lens layer 56 is an on-chip lens integrated with lens portions corresponding to the plurality of color filters 54. Note that other organic layers may be provided between the organic photoelectric conversion layer 22 and the semiconductor layer 21 and between the organic photoelectric conversion layer 22 and the upper electrode 23.

[0032] The read electrode 26, the upper electrode 23, and the charge storage electrode 25 are made of a light-transmitting conductive film, such as indium tin oxide (ITO). However, the materials for the read electrode 26, the upper electrode 23, and the charge storage electrode 25 may be other than ITO, such as tin oxide (SnOx)-based materials with dopants or zinc oxide-based materials made by adding dopants to zinc oxide (ZnO). Examples of zinc oxide-based materials include aluminum zinc oxide (AZO) with aluminum (Al) as a dopant, gallium zinc oxide (GZO) with gallium (Ga), and indium zinc oxide (IZO) with indium (In). The read electrode 26, the upper electrode 23, and the charge storage electrode 25 may also be made of CuI, InSbO4, ZnMgO, CuInO2, MgIN2O4, CdO, ZnSnO3, or TiO2. Furthermore, a spinel oxide or an oxide having a YbFe2O4 structure may also be used.

[0033] The organic photoelectric conversion layer 22 extends from the active region 100R1 to the peripheral region 100R2. The organic photoelectric conversion layer 22 converts light energy into electrical energy and is formed, for example, by including two or more organic materials that function as p-type and n-type semiconductors. The p-type semiconductor functions relatively as an electron donor, while the n-type semiconductor functions relatively as an electron acceptor. The organic photoelectric conversion layer 22 has a bulk heterojunction structure within the layer. The bulk heterojunction structure is a p / n junction interface formed by mixing a p-type semiconductor and an n-type semiconductor, and excitons generated upon light absorption separate into electrons and holes at this p / n junction interface.

[0034] In addition to the p-type and n-type semiconductors, the organic photoelectric conversion layer 22 may further include three types of so-called dye materials that photoelectrically convert light in a predetermined wavelength band while transmitting light in other wavelength bands. The p-type semiconductor, n-type semiconductor, and dye material preferably have different maximum absorption wavelengths. This allows absorption of light in a wide range of wavelengths in the visible light region.

[0035] The organic photoelectric conversion layer 22 can be formed by, for example, mixing the various organic semiconductor materials described above and using a spin coating technique. Alternatively, the organic photoelectric conversion layer 22 may be formed by, for example, a vacuum deposition method or a printing technique.

[0036] The material constituting the semiconductor layer 21 preferably has a large band gap (for example, a band gap of 3.0 eV or more) and a higher mobility than the material constituting the organic photoelectric conversion layer 22. Specific examples of such a material include oxide semiconductor materials such as IGZO, transition metal dichalcogenides, silicon carbide, diamond, graphene, carbon nanotubes, and organic semiconductor materials such as condensed polycyclic hydrocarbon compounds and condensed heterocyclic compounds.

[0037] The charge storage electrode 25, together with the insulating layer 24 and the semiconductor layer 21, forms a type of capacitor, and accumulates charges generated in the organic photoelectric conversion layer 22 in a portion of the semiconductor layer 21, for example, a region of the semiconductor layer 21 that corresponds to the charge storage electrode 25, via the insulating layer 24. In this embodiment, for example, one charge storage electrode 25 is provided corresponding to each of one color filter 54 and one lens portion. The charge storage electrode 25 is connected to, for example, the vertical drive circuit 111.

[0038] The insulating layer 24 can be formed of, for example, the same inorganic insulating material and organic insulating material as the insulating layer 41 .

[0039] As described above, the second light detection unit 20 detects some or all of the wavelengths in the visible light range. It is also preferable that the second light detection unit 20 does not have sensitivity to the infrared light range.

[0040] In the second photodetector 20, light incident from the upper electrode 23 side is absorbed by the organic photoelectric conversion layer 22. The resulting excitons (electron-hole pairs) migrate to the interface between the electron donor and electron acceptor constituting the organic photoelectric conversion layer 22, where they dissociate into electrons and holes. The generated charges, i.e., electrons and holes, migrate to the upper electrode 23 or the semiconductor layer 21 due to diffusion caused by a difference in carrier concentration or an internal electric field caused by a potential difference between the upper electrode 23 and the charge storage electrode 25, and are detected as photocurrent. For example, the readout electrode 26 is set to a positive potential and the upper electrode 23 is set to a negative potential. In this case, holes generated by photoelectric conversion in the organic photoelectric conversion layer 22 migrate to the upper electrode 23. Electrons generated by photoelectric conversion in the organic photoelectric conversion layer 22 are attracted to the charge storage electrode 25 and accumulated in a portion of the semiconductor layer 21, for example, a region of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24.

[0041] Charges (e.g., electrons) stored in the region of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24 are read out as follows. Specifically, a predetermined potential (for convenience, referred to as potential V26) is applied to the read electrode 26, and a predetermined potential (for convenience, referred to as potential V25) is applied to the charge storage electrode 25. Here, potential V26 is made higher than potential V25 (V25<V26). In this way, the electrons stored in the region of the semiconductor layer 21 corresponding to the charge storage electrode 25 are transferred to the read electrode 26.

[0042] By providing the semiconductor layer 21 below the organic photoelectric conversion layer 22 in this manner and storing charges (e.g., electrons) in a region of the semiconductor layer 21 corresponding to the charge storage electrode 25 via the insulating layer 24, the following effects can be obtained. That is, compared to storing charges (e.g., electrons) in the organic photoelectric conversion layer 22 without providing the semiconductor layer 21, recombination of holes and electrons during charge storage is prevented, the transfer efficiency of the stored charges (e.g., electrons) to the readout electrode 26 can be increased, and the generation of dark current can be suppressed. Although the above description illustrates the case where electrons are read out, holes may also be read out. When holes are read out, the potential in the above description is described as the potential sensed by the holes.

[0043] (Sealing Layer 50) The sealing layer 50 includes a first sealing film 51 and a second sealing film 52. The first sealing film 51 is provided in the peripheral region 100R2. The first sealing film 51 is not provided in the effective region 100R1, but includes an edge 51T located at the boundary K between the effective region 100R1 and the peripheral region 100R2. The second sealing film 52 is located between the first sealing film 51 and the organic photoelectric conversion layer 22 and extends from the effective region 100R1 to the peripheral region 100R2. The second sealing film 52 covers the entire organic photoelectric conversion layer 22 via the upper electrode 23. The sealing layer 50 may further include a third sealing film 53. The third sealing film 53 covers the second sealing film 52 in the effective region 100R1 and covers the first sealing film 51 and the second sealing film 52 in the peripheral region 100R2. The third sealing film 53 may cover the second light-shielding layer 62 in the peripheral region 100R2. As such, the sealing layer 50 has a recess 50U formed in the effective region 100R1. The recess 50U includes a bottom portion extending in the XY plane and a wall portion rising in the Z-axis direction at the edge 51T. The bottom portion is a portion where the second sealing film 52 and the third sealing film 53 are stacked, and the wall portion is a portion where the second sealing film 52, the first sealing film 51, and the third sealing film 53 are stacked.

[0044] The sealing layer 50 is made of a transparent insulating material. Specifically, the sealing layer 50 is made of AlO, SiO, ZrO ２ , HfO ２ , and TiO ２ It contains at least one of the following.

[0045] (First Light-Shielding Layer 61) The first light-shielding layer 61 is provided in the first sealing film 51 of the sealing layer 50. The first light-shielding layer 61 extends from a position K of the edge 51T in a direction away from the effective region 100R1, i.e., toward the peripheral region 100R2. In the example shown in FIG. 2 , the first light-shielding layer 61 is provided between the organic photoelectric conversion layer 22 and the first sealing film 51. The first light-shielding layer 61 can be made of a material containing at least one of W (tungsten), Al (aluminum), Cu (copper), TiN (titanium nitride), and TiO (titanium oxide).

[0046] (Second Light-Shielding Layer 62) The second light-shielding layer 62 is provided at a position away from position K in the first sealing film 51. In the example shown in FIG. 2 , the second light-shielding layer 62 has a portion provided on the opposite side of the organic photoelectric conversion layer 22 from the first sealing film 51. That is, the second light-shielding layer 62 is provided so as to cover the first sealing film 51. The first light-shielding layer 61 occupies a region GP corresponding to the gap between the effective region 100R1 and the second light-shielding layer 62. As described above, the second light-shielding layer 62 electrically connects the upper electrode 23 and the wiring 64 via the contact portion 66. Therefore, the second light-shielding layer 62 serves as a transmission path for transmitting charges generated in the organic photoelectric conversion layer 22. The second light-shielding layer 62 is made of a conductive material such as W (tungsten), Al (aluminum), or Cu (copper).

[0047] The peripheral region 100R2 includes a black level reference element PB for detecting a reference value for the black level. The black level reference element PB includes a third light-shielding layer 63. Similar to the first light-shielding layer 61, the third light-shielding layer 63 is made of a material containing at least one of W (tungsten), Al (aluminum), Cu (copper), TiN (titanium nitride), and TiO (titanium oxide). The third light-shielding layer 63 is disposed to cover the second light-shielding layer 62 via a third sealing film 53, for example. Similarly to the pixel PX, the black level reference element PB includes a readout electrode 26, a semiconductor layer 21, an organic photoelectric conversion layer 22, and an upper electrode 23, which are stacked in order from the position closest to the first photodetector 10. The black level reference element PB further includes an insulating layer 24 disposed below the semiconductor layer 21 and a charge storage electrode 25 disposed opposite the semiconductor layer 21 via the insulating layer 24.

[0048] 3A to 3H, a method for manufacturing the photodetector 1 will be described. Figures 3A to 3H are schematic cross-sectional views each showing a manufacturing process in the method for manufacturing the photodetector 1. Here, a method for manufacturing the second photodetector 20 will be mainly described.

[0049] First, as shown in FIG. 3A , a stack SS is prepared, in which the first photodetector 10 and the intermediate layer 40 are stacked. The stack SS has a charge storage electrode 25 and a readout electrode 26 provided on the outermost surface of the insulating layer 41 of the intermediate layer 40. The stack SS corresponds to a specific example of one embodiment of the "base" of the present disclosure. Next, a stack structure of the organic photoelectric conversion layer 22 and the upper electrode 23 is selectively formed so as to extend across the regions that will later become the effective region 100R1 and the peripheral region 100R2. Thereafter, a second sealing film 52 is formed to cover the stack SS and the stack structure of the organic photoelectric conversion layer 22 and the upper electrode 23. After forming the second sealing film 52, a first light-shielding layer 61Z is formed on the second sealing film 52 at a position overlapping the organic photoelectric conversion layer 22 and the upper electrode 23 in the Z-axis direction. However, the area of ​​the first light-shielding layer 61Z is set to be smaller than the area of ​​the organic photoelectric conversion layer 22 and the area of ​​the upper electrode 23. In other words, in the peripheral region 100R2, a portion of the upper electrode 23 is set not to overlap the first light-shielding layer 61Z in the Z-axis direction.

[0050] Next, as shown in FIG. 3B, a first sealing film 51Z is formed so as to cover the second sealing film 52 and the first light-shielding layer 61Z.

[0051] 3C , a via U51Z is formed in a portion of the first sealing film 51Z that overlaps with the upper electrode 23 in the Z-axis direction but does not overlap with the first light-shielding layer 61Z in the Z-axis direction, penetrating the first sealing film 51Z and the second sealing film 52. That is, a portion of the upper electrode 23 is exposed at the bottom of the via U51Z.

[0052] 3D , a second light-shielding film 62Z is ​​formed to cover the first sealing film 51Z. At this time, the second light-shielding film 62Z is ​​formed to fill at least the bottom of the via U51Z, and the second light-shielding film 62Z and the upper electrode 23 are in contact with each other.

[0053] 3E, the portion of the second light-shielding film 62Z that occupies the effective region 100R1 is selectively removed, and the second light-shielding layer 62 is formed by this operation.

[0054] Next, as shown in FIG. 3F , a photoresist pattern PR is selectively formed to cover the first sealing film 51Z, the second light-shielding layer 62, and the like in the peripheral region 100R2. Thereafter, as shown in FIG. 3G , an etching process is performed by irradiating plasma using the photoresist pattern PR as a mask, and the portion of the first sealing film 51Z that occupies the effective region 100R1 is selectively removed. As a result, a part of the first light-shielding layer 61Z, i.e., the portion of the first light-shielding layer 61Z that occupies the effective region 100R1, is exposed.

[0055] Next, as shown in FIG. 3H , a portion of the first light-shielding layer 61Z that occupies the effective region 100R1 is selectively removed by etching. As a result, the first light-shielding layer 61 is formed in the peripheral region 100R2. Note that the gas species used to remove the first light-shielding layer 61Z may be different from the gas species used to remove the first sealing film 51Z. Furthermore, a third sealing film 53 is formed to completely cover the effective region 100R1 and the peripheral region 100R2.

[0056] As a result of the above, the sealing layer 50 having the recess 50U and the first and second light-shielding layers 61 and 62 formed in the peripheral region 100R2 are obtained. After this, the color filter 54, the inter-pixel light-shielding walls 55, the lens layer 56, the anti-reflection film 57, the third light-shielding layer 63, etc. are formed in this order, thereby completing the photodetector 1.

[0057] [1-3. Effects] As described above, the photodetector 1 according to the present embodiment includes a semiconductor structure S1 having an effective region 100R1 in which a plurality of pixels PX that detect irradiated light and perform photoelectric conversion are provided, and a peripheral region 100R2 adjacent to the effective region 100R1. The semiconductor structure S1 includes an organic photoelectric conversion layer 22, a sealing layer 50, and a first light-shielding layer 61. The organic photoelectric conversion layer 22 extends from the effective region 100R1 to the peripheral region 100R2, and the sealing layer 50 includes a first sealing film 51 that is provided in the peripheral region 100R2 and includes an edge 51T located at the boundary K, and covers the organic photoelectric conversion layer 22. The first light-shielding layer 61 is provided on the first sealing film 51 and extends from the edge 51T toward the peripheral region 100R2.

[0058] However, when stress is applied to the organic photoelectric conversion layer 22, the characteristics of the organic photoelectric conversion layer 22 may fluctuate significantly. For example, the first light-shielding layer 61, the second light-shielding layer 62, and the third light-shielding layer 58 are formed above the organic photoelectric conversion layer 22. When the first light-shielding layer 61, the second light-shielding layer 62, and the third light-shielding layer 58 are made of metal films, they generally generate high stress. Therefore, the characteristics of the organic photoelectric conversion layer 22 may be affected by these stresses and may change. One way to reduce the stress in the first light-shielding layer 61, the second light-shielding layer 62, and the third light-shielding layer 58 is to reduce the thickness of the first light-shielding layer 61, the second light-shielding layer 62, and the third light-shielding layer 58, for example. However, this may result in insufficient light-shielding properties. Furthermore, because organic photoelectric conversion layers are generally sensitive to heat, the sealing layer provided between the light-shielding layer and the organic photoelectric conversion layer is formed using a low-temperature process. This sealing layer is provided to prevent the intrusion of moisture and the like into the organic photoelectric conversion layer, but because the sealing layer formed by a low-temperature process has poor film quality, the thickness of the sealing layer is increased to ensure sufficient sealing. However, increasing the thickness of the sealing layer leads to an increase in the distance between the organic photoelectric conversion layer and the on-chip lens, which causes problems such as insufficient light detection sensitivity when irradiated light is incident at an angle and color mixing.

[0059] In contrast, in the photodetector 1 of this embodiment, a recess 50U is provided at a position corresponding to the effective region 100R1 of the sealing layer 50 provided on the organic photoelectric conversion layer 22. That is, the first sealing film 51 is not provided in the effective region 100R1. This reduces stress applied to the organic photoelectric conversion layer 22. Furthermore, it is possible to arrange the lens layer 56 and the organic photoelectric conversion layer 22 in close proximity in the Z-axis direction. This prevents light that should be incident on a pixel PX from unintentionally entering another pixel PX adjacent to that pixel PX. As a result, the photodetector 1 of this embodiment can improve oblique incidence characteristics and photoelectric conversion characteristics while maintaining sealing and light-blocking properties.

[0060] Furthermore, in the photodetector 1 of this embodiment, a first light-shielding layer 61 is provided on the first sealing film 51 and extends from the edge 51T at the boundary K between the effective region 100R1 and the peripheral region 100R2 toward the peripheral region 100R2. This suppresses unwanted light from entering the peripheral region 100R2 and inhibits deterioration of the organic photoelectric conversion layer 22 during manufacturing. Specifically, for example, when the organic photoelectric conversion layer 22 is irradiated with ultraviolet light, pigment aggregation occurs in the organic photoelectric conversion layer 22, resulting in a decrease in internal quantum efficiency. Therefore, in the manufacturing method of the photodetector 1 of this embodiment, when selectively removing the portion of the first sealing film 51Z occupying the effective region 100R1, as shown in FIG. 3G , a first light-shielding layer 61Z is provided on the organic photoelectric conversion layer 22 located below the first sealing film 51Z. This prevents ultraviolet light generated during etching of the first sealing film 51Z from irradiating the organic photoelectric conversion layer 22. As a result, the photodetector 1 can be realized with excellent photoelectric conversion characteristics.

[0061] 2. Modifications of the First Embodiment [2-1. First Modification] FIG. 4 schematically illustrates an example of a vertical cross-sectional configuration along the thickness direction of a portion of a semiconductor structure S1A as a first modification (modification 1-1) of the first embodiment. The semiconductor structure S1A has a first light-shielding layer 61A instead of the first light-shielding layer 61. Except for this, the configuration of the semiconductor structure S1A is substantially the same as the configuration of the semiconductor structure S1. In the semiconductor structure S1A, the first light-shielding layer 61A extends not only in the region overlapping the upper electrode 23 and the organic photoelectric conversion layer 22, but also in the region where the upper electrode 23 and the organic photoelectric conversion layer 22 are not present. Therefore, a portion of the second light-shielding layer 62 overlaps a portion of the first light-shielding layer 61A in the thickness direction (Z-axis direction). Therefore, the thickness of the second light-shielding layer 62 can be made thinner in the semiconductor structure S1A compared to the semiconductor structure S1. The reduction in the thickness of the second light-shielding layer 62 also reduces the thickness of the first sealing film 51, which serves as a stress buffer layer that buffers the stress of the second light-shielding layer 62. As a result, the etching process time required for selectively removing the first sealing film 51Z (see FIG. 3G ) during the manufacturing process can be reduced, and irradiation of ultraviolet rays to the organic photoelectric conversion layer 22 can be effectively prevented.

[0062] [2-2. Second Modification] FIG. 5 schematically illustrates an example of a vertical cross-sectional configuration along the thickness direction of a portion of a semiconductor structure S1B as a second modification (modification 1-2) of the first embodiment. In the semiconductor structure S1B, a first light-shielding layer 61 and a second light-shielding layer 62 are electrically connected to each other. Except for this, the configuration of the semiconductor structure S1B is substantially the same as the configuration of the semiconductor structure S1. However, in the semiconductor structure S1B, the first light-shielding layer 61 is made of a conductive material such as W (tungsten), Al (aluminum), or Cu (copper). In the semiconductor structure S1A, the first light-shielding layer 61 is electrically connected to the second light-shielding layer 62, which serves as a charge transmission path. Therefore, even if the first light-shielding layer 61 is made of a conductive material, it is not electrically floating, thereby preventing unintended discharge (arcing).

[0063] [2-3. Third Modification] FIG. 6 schematically illustrates an example of a vertical cross-sectional configuration along the thickness direction of a portion of a semiconductor structure S1C as a third modification (modification 1-3) of the first embodiment. In the semiconductor structure S1C, the first light-shielding layer 61, rather than the second light-shielding layer 62, is electrically connected to a contact portion 66 extending downward from the first sealing film 51 in the peripheral region 100R2, i.e., from the first sealing film 51 toward the opposite side of the second light-shielding layer 62. Except for this point, the configuration of the semiconductor structure S1C is substantially the same as the configuration of the semiconductor structure S1A. In the semiconductor structure S1C, the first light-shielding layer 61 is made of a conductive material such as W (tungsten), Al (aluminum), or Cu (copper). Therefore, in the semiconductor structure S1C, the first light-shielding layer 61 is electrically connected to the second light-shielding layer 62, which serves as a charge transmission path. Therefore, even if the first light-shielding layer 61 is made of a conductive material, it does not become electrically floating, thereby preventing unintended discharge (arcing). Furthermore, in the semiconductor structure S1C, the first light-shielding layer 61 is electrically connected to the contact portion 66, so the length of the contact portion 66 in the thickness direction can be shortened compared to the semiconductor structure S1A. Therefore, the amount of unnecessary light irradiated onto the organic photoelectric conversion layer 22 when forming the contact portion 66 can be reduced. Furthermore, the flatness of the base layer (e.g., the third sealing film 53) when forming the color filter 54 can be improved.

[0064] [2-4. Fourth Modification] FIG. 7 schematically illustrates an example of a vertical cross-sectional configuration along the thickness direction of a portion of a semiconductor structure S1D as a fourth modification (modification 1-4) of the first embodiment. In the semiconductor structure S1D, the first light-shielding layer 61 is electrically connected to the upper electrode 23 via a contact portion 65. In the semiconductor structure S1D, the first light-shielding layer 61, rather than the second light-shielding layer 62, is electrically connected to a contact portion 66 extending downward from the first sealing film 51 in the peripheral region 100R2, i.e., from the first sealing film 51 toward the opposite side from the second light-shielding layer 62. Furthermore, in the semiconductor structure S1D, the second light-shielding layer 62 is connected to the contact portion 66 via a contact portion 67 near the contact portion 66. Except for these points, the configuration of the semiconductor structure S1D is substantially the same as the configuration of the semiconductor structure S1A. In the semiconductor structure S1D, the first light-shielding layer 61 is made of a conductive material such as W (tungsten), Al (aluminum), or Cu (copper). Therefore, in the semiconductor structure S1D, the first light-shielding layer 61 is electrically connected to the second light-shielding layer 62, which serves as a charge transmission path. Therefore, even if the first light-shielding layer 61 is made of a conductive material, it is not electrically floating, thereby preventing unintended discharge (arcing). Furthermore, in the semiconductor structure S1D, the first light-shielding layer 61 is electrically connected to the contact portion 66, so the length of the contact portion 66 in the thickness direction can be shortened compared to the semiconductor structure S1A. Therefore, the amount of unnecessary light irradiated onto the organic photoelectric conversion layer 22 during the formation of the contact portion 66 can be reduced. Furthermore, in the semiconductor structure S1D, the thickness of the first sealing film 51 can be further reduced, which is expected to improve oblique incidence characteristics and QE.

[0065] 8 is a schematic diagram showing an example of a vertical cross-sectional configuration along the thickness direction of a part of a semiconductor structure S1E as a fifth modification (modification 1-5) of the first embodiment. The second photodetector 20 in the semiconductor structure S1 of the first embodiment is made of AlO, SiO, ZrO ２ , HfO ２ , or TiO ２The semiconductor structure S1E of the fifth modification (modification 1-5) includes a first sealing film 51 made of a transparent insulating material such as a fluorine-containing compound (FQC) or a fluorine-containing compound (FQC) or a fluorine-containing compound (FQC). In contrast, the semiconductor structure S1E of the fifth modification (modification 1-5) includes a first sealing film 51A made of a resin material having at least one of photosensitivity and ultraviolet absorption properties. Except for this point, the configuration of the semiconductor structure S1E is substantially the same as the configuration of the semiconductor structure S1.

[0066] The first sealing film 51A covers the end surface 22T of the organic photoelectric conversion layer 22 located in the peripheral region 100R2 via the second sealing film 52. The end surface 22T is a surface including the outer edge of the organic photoelectric conversion layer 22. The resin material constituting the first sealing film 51A, which has at least one of photosensitivity and UV absorption properties, is, for example, a polymeric resin material. Examples of polymeric resin materials constituting the first sealing film 51A include polyethyl methacrylate, polyvinyl alcohol, polyvinyl phenol, polyether sulfone, polyimide, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate. These resins may contain a triazine-based, benzophenone-based, benzoate-based, hindered amine-based, cinnamic acid-based, cyanoacrylate-based, or salicylate-based UV absorbing agent.

[0067] 9A to 9H, a first manufacturing method of the semiconductor structure S1E will be described. Figures 9A to 9H are cross-sectional views each showing a manufacturing process in the manufacturing method of the semiconductor structure S1E. Here, a manufacturing method of the second optical detection unit 20E having a first sealing film 51A made of a photosensitive resin material will be described.

[0068] First, as shown in FIG. 9A , a stack SS is prepared, in which a first photodetector 10 and an intermediate layer 40 are stacked. The stack SS has a charge storage electrode 25 and a readout electrode 26 provided on the outermost surface of the insulating layer 41 of the intermediate layer 40. The stack SS corresponds to a specific example of one embodiment of the "base" of the present disclosure. Next, a stack structure of an organic photoelectric conversion layer 22 and an upper electrode 23 is selectively formed so as to extend across the effective region 100R1 and the peripheral region 100R2. Thereafter, a second sealing film 52 is formed to cover the stack SS and the stack structure of the organic photoelectric conversion layer 22 and the upper electrode 23. After forming the second sealing film 52, a first light-shielding layer 61Z is formed on the second sealing film 52 at a position overlapping the organic photoelectric conversion layer 22 and the upper electrode 23 in the Z-axis direction. However, the area of ​​the first light-shielding layer 61Z is set to be smaller than the area of ​​the organic photoelectric conversion layer 22 and the area of ​​the upper electrode 23. In other words, in the peripheral region 100R2, a portion of the upper electrode 23 is set not to overlap the first light-shielding layer 61Z in the Z-axis direction.

[0069] Next, as shown in FIG. 9B , a first sealing film 51A made of a photosensitive resin material is formed so as to selectively cover the second sealing film 52 and the first light-shielding layer 61Z. The first sealing film 51A can be formed, for example, by photolithography. The first sealing film 51A is formed to include an opening 51AK1 in the area that will later become the effective region 100R1, and an opening 51AK2 in the area that will later become the peripheral region 100R2, which overlaps with the upper electrode 23 in the Z-axis direction but does not overlap with the first light-shielding layer 61Z in the Z-axis direction. Therefore, in FIG. 9B , a portion of the first light-shielding layer 61Z is exposed at the bottom of the opening 51AK1, and a portion of the second sealing film 52 is exposed at the bottom of the opening 51AK2.

[0070] 9C, a photoresist pattern PR1 is selectively formed to cover first sealing film 51A. At this time, the photoresist pattern PR1 is not formed in opening 51AK2, and a part of second sealing film 52 is kept exposed at the bottom of opening 51AK2.

[0071] Next, an etching process is performed using the photoresist pattern PR1 as a mask to remove the portion of second sealing film 52 that is not covered by the photoresist pattern PR1, i.e., the portion exposed at the bottom of opening 51AK2, as shown in Fig. 9D. This operation exposes a portion of upper electrode 23 at the bottom of opening 51AK2.

[0072] 9E, a second light-shielding film 62Z is ​​formed to cover the first sealing film 51A. At this time, the second light-shielding film 62Z is ​​formed to cover the first light-shielding layer 61Z exposed at the bottom of the opening 51AK1 and the upper electrode 23 exposed at the bottom of the opening 51AK2.

[0073] 9F, a photoresist pattern PR2 is selectively formed in part of the region that will later become the peripheral region 100R2 so as to cover the second light-shielding film 62Z. At this time, the photoresist pattern PR2 is formed so as to fill the opening 51AK2.

[0074] 9G, an etching process is performed using the photoresist pattern PR2 as a mask to remove the portions of the first light-shielding layer 61Z and the second light-shielding film 62Z that are not covered by the photoresist pattern PR2. This operation exposes a portion of the second sealing film 52 that occupies the effective region 100R1, and the first light-shielding layer 61 and the second light-shielding layer 62 are respectively formed in the peripheral region 100R2.

[0075] Finally, as shown in FIG. 9H, the third sealing film 53 is formed so as to entirely cover the effective region 100R1 and the peripheral region 100R2.

[0076] This completes the second light detection unit 20E. After that, the color filter 54, the inter-pixel light-shielding wall 55, the lens layer 56, the anti-reflection film 57, the third light-shielding layer 63, and the like are sequentially formed to complete the semiconductor structure S1E.

[0077] Furthermore, when manufacturing the second optical detection unit 20E having the first sealing film 51A made of a resin material that is not photosensitive, it can be manufactured using the manufacturing method described in the first embodiment above with reference to Figures 3A to 3H.

[0078] (Effects) In the semiconductor structure S1E, too, a recess 50U is provided at a position corresponding to the effective region 100R1 of the sealing layer 50 provided on the organic photoelectric conversion layer 22. That is, the first sealing film 51 is not provided in the effective region 100R1. This reduces the stress applied to the organic photoelectric conversion layer 22. Furthermore, by providing the first light-shielding layer 61, it is possible to suppress the incidence of unwanted light into the peripheral region 100R2.

[0079] Furthermore, in the semiconductor structure S1E, a photosensitive resin material is used as the constituent material of the first sealing film 51A, which selectively covers the second sealing film 52 and the first light-shielding layer 61Z. Therefore, the first sealing film 51A can be formed by patterning using a photolithography method. Therefore, unlike etching processes using plasma irradiation, for example, no ultraviolet light is generated when forming the first sealing film 51A. As a result, unnecessary ultraviolet light can be prevented from being irradiated onto the organic photoelectric conversion layer 22, and the semiconductor structure S1E exhibiting excellent photoelectric conversion characteristics can be realized.

[0080] Furthermore, when the first sealing film 51A is formed using a resin material that does not have photosensitivity, a method other than photolithography is used. However, if the resin material constituting the first sealing film 51A is a resin material that has ultraviolet absorption properties, even if ultraviolet rays are generated during the manufacturing process, the first sealing film 51A absorbs the ultraviolet rays, thereby reducing the amount of ultraviolet rays irradiated onto the organic photoelectric conversion layer 22. Therefore, a semiconductor structure S1E that exhibits good photoelectric conversion characteristics can be realized.

[0081] [2-6. Sixth Modification] (Configuration) FIG. 10 schematically illustrates an example of a vertical cross-sectional configuration along the thickness direction of a portion of a semiconductor structure S1F as a sixth modification (modification 1-6) of the first embodiment. The semiconductor structure S1F has a first sealing film 51B instead of the first sealing film 51. The first sealing film 51 of the semiconductor structure S1 has a step on its upper surface. In contrast, the upper surface 51BS of the first sealing film 51B, located on the side opposite the organic photoelectric conversion layer 22, is a flat surface extending along the XY plane, and the upper surface 51BS is substantially step-free. Except for this point, the configuration of the semiconductor structure S1F as the sixth modification (modification 1-6) is substantially the same as the configuration of the semiconductor structure S1 of the first embodiment.

[0082] (Effects) The photodetector 1 including the semiconductor structure S1F can be expected to achieve the same effects as the photodetector 1 including the semiconductor structure S1. Furthermore, because the first sealing film 51B has a top surface 51BS without any steps, the third sealing film 53, the second light-shielding layer 62, and the third light-shielding layer 63 can be formed with more uniform thicknesses, and cracks and breaks can be prevented from occurring in the third sealing film 53, the second light-shielding layer 62, and the third light-shielding layer 63. Therefore, the semiconductor structure S1F can have higher reliability. Furthermore, the first sealing film 51B can reduce stress concentration on the end surface 22T of the organic photoelectric conversion layer 22 and its vicinity compared to the first sealing film 51. Therefore, peeling of the organic photoelectric conversion layer 22 from the semiconductor layer 21 near the end surface 22T can be suppressed.

[0083] [2-7. Seventh Modification] (Configuration) FIG. 11 schematically illustrates an example of a vertical cross-sectional configuration along the thickness direction of a portion of a semiconductor structure S1G as a seventh modification (modification 1-7) of the first embodiment. The semiconductor structure S1G has a first sealing film 51C instead of the first sealing film 51. The first sealing film 51C is made of a material that has a light-blocking property that blocks visible light, for example. Furthermore, the semiconductor structure S1G does not have a third light-blocking layer 63. Except for these points, the configuration of the semiconductor structure S1G as the seventh modification (modification 1-7) is substantially the same as the configuration of the semiconductor structure S1 of the first embodiment described above.

[0084] (Effects) The photodetector 1 including the semiconductor structure S1G can also be expected to have the same effects as the photodetector 1 including the semiconductor structure S1. Furthermore, since the first sealing film 51G includes the first sealing film 51C having light-shielding properties, it is not necessary to provide the third light-shielding layer 63. This allows the semiconductor structure S1G to be made thinner.

[0085] 12 is a schematic diagram showing an example of a vertical cross-sectional configuration along the thickness direction of a part of a semiconductor structure S1H as an eighth modification (modification 1-8) of the first embodiment. The semiconductor structure S1H further includes an intervening layer 71 provided between the first sealing film 51 and the second light-shielding layer 62. Examples of materials that can be used to form the intervening layer 71 include SiO, SiN, and ZrO. ２ , HfO ２ , or TiO ２ Except for these points, the configuration of the semiconductor structure S1H as the eighth modified example (modified example 1-8) is substantially the same as the configuration of the semiconductor structure S1 of the first embodiment.

[0086] (Effects) The photodetector 1 including the semiconductor structure S1H can be expected to have the same effects as the photodetector 1 including the semiconductor structure S1. Furthermore, the first sealing film 51H further includes the intervening layer 71, which can relieve the internal stress of the first sealing film 51. Furthermore, the intervening layer 71 can improve the adhesion between the first sealing film 51 and the second light-shielding layer 62.

[0087] [2-9. Ninth Modification] (Configuration) FIG. 13 schematically illustrates an example of a vertical cross-sectional configuration along the thickness direction of a portion of a semiconductor structure S1J as a ninth modification (modification 1-9) of the first embodiment. The semiconductor structure S1J further includes an intervening layer 72 provided to cover a portion of the upper surface of the third sealing film 53, which covers the first sealing film 51 in the peripheral region 100R2, where the portion has a large step. Examples of materials constituting the intervening layer 72 include the same material as the inter-pixel light-shielding wall 55. The intervening layer 72 may be formed in the same process as the inter-pixel light-shielding wall 55. Except for this point, the configuration of the semiconductor structure S1J as the ninth modification (modification 1-9) is substantially the same as the configuration of the semiconductor structure S1 of the first embodiment.

[0088] (Effects) The photodetector 1 including the semiconductor structure S1J can be expected to achieve the same effects as the photodetector 1 including the semiconductor structure S1. Furthermore, because the first sealing film 51J further includes the intervening layer 72, the step of the surface that serves as the base when forming the third light-shielding layer 63 can be reduced. This allows the third light-shielding layer 63 to be formed with a more uniform thickness and prevents cracks or breaks from occurring in the third light-shielding layer 63. This results in higher reliability for the semiconductor structure S1J. Furthermore, the first sealing film 51J can reduce stress generated in and around the third light-shielding layer 63 compared to the first sealing film 51. This prevents peeling of the organic photoelectric conversion layer 22 from the semiconductor layer 21 near the end surface 22T.

[0089] 3. Second Embodiment Fig. 14A is a schematic diagram illustrating an example of the overall configuration of a light detection system 301 according to a third embodiment of the present disclosure. Fig. 14B is a schematic diagram illustrating an example of the circuit configuration of the light detection system 301. The light detection system 301 includes a light-emitting device 310 serving as a light source unit that emits light L2, and a light detection device 320 serving as a light-receiving unit having a photoelectric conversion element. The light detection device 320 may be the light detection device 1 described above. The light detection system 301 may further include a system control unit 330, a light source driving unit 340, a sensor control unit 350, a light source-side optical system 360, and a camera-side optical system 370.

[0090] The photodetector 320 can detect light L1 and light L2. Light L1 is external ambient light reflected by the object (measurement target) 300 ( FIG. 14A ). Light L2 is light emitted by the light-emitting device 310 and then reflected by the object 300. Light L1 is, for example, visible light, and light L2 is, for example, infrared light. Light L1 can be detected by an organic photoelectric conversion unit in the photodetector 320, and light L2 can be detected by a photoelectric conversion unit in the photodetector 320. Image information of the object 300 can be obtained from light L1, and distance information between the object 300 and the photodetector system 301 can be obtained from light L2. The photodetector system 301 can be installed in, for example, an electronic device such as a smartphone or a mobile object such as a car. The light-emitting device 310 can be configured, for example, by a semiconductor laser, a surface-emitting semiconductor laser, or a vertical-cavity surface-emitting laser (VCSEL). The method of detecting the light L2 emitted from the light-emitting device 310 by the photodetector 320 can be, for example, an iTOF method, but is not limited to this. In the iTOF method, the photoelectric conversion unit can measure the distance to the subject 300 using, for example, time-of-flight (TOF). The method of detecting the light L2 emitted from the light-emitting device 310 by the photodetector 320 can also be, for example, a structured light method or a stereo vision method. For example, in the structured light method, a predetermined pattern of light is projected onto the subject 300 and the distance between the photodetector system 301 and the subject 300 can be measured by analyzing the distortion of the pattern. Furthermore, in the stereo vision method, for example, two or more cameras are used to acquire two or more images of the subject 300 viewed from two or more different viewpoints, thereby measuring the distance between the photodetector system 301 and the subject. The light-emitting device 310 and the photodetector 320 can be synchronously controlled by the system control unit 330.

[0091] 15 is a block diagram showing a configuration example of an electronic device 2000 to which the present technology is applied. The electronic device 2000 has a function as a camera, for example.

[0092] The electronic device 2000 includes an optical unit 2001 including a group of lenses, a photodetector 2002 to which the above-described photodetector 1 or the like is applied, and a DSP (Digital Signal Processor) circuit 2003, which is a camera signal processing circuit. The electronic device 2000 also includes a frame memory 2004, a display unit 2005, a recording unit 2006, an operation unit 2007, and a power supply unit 2008. The DSP circuit 2003, the frame memory 2004, the display unit 2005, the recording unit 2006, the operation unit 2007, and the power supply unit 2008 are connected to one another via a bus line 2009.

[0093] The optical unit 2001 takes in incident light (image light) from a subject and forms an image on the imaging surface of the photodetector 2002. The photodetector 2002 converts the amount of incident light formed on the imaging surface by the optical unit 2001 into an electrical signal on a pixel-by-pixel basis and outputs the signal as a pixel signal.

[0094] The display unit 2005 is formed of a panel display device such as a liquid crystal panel or an organic EL panel, and displays moving images or still images captured by the photodetector 2002. The recording unit 2006 records the moving images or still images captured by the photodetector 2002 on a recording medium such as a hard disk or a semiconductor memory.

[0095] The operation unit 2007, under the operation of a user, issues operation commands for various functions of the electronic device 2000. The power supply unit 2008 appropriately supplies various types of power to the DSP circuit 2003, frame memory 2004, display unit 2005, recording unit 2006, and operation unit 2007 as operating power sources.

[0096] As described above, by using the above-described photodetector 1 as the photodetector 2002, it is possible to expect to obtain a good image.

[0097] 5. Application Examples to Mobile Bodies The technology according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, a robot, construction machinery, or agricultural machinery (tractor).

[0098] FIG. 16 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0099] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 16, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0100] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0101] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0102] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0103] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0104] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0105] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0106] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0107] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0108] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 16, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0109] FIG. 17 is a diagram showing an example of the installation position of the imaging unit 12031.

[0110] In FIG. 17, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0111] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0112] 17 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0113] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0114] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0115] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0116] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0117] Although several embodiments and modifications, as well as application examples and applied examples have been described above, the present disclosure is not limited to the above-described embodiments, etc., and various modifications are possible. For example, the photodetector of the present disclosure does not need to include all of the components described in the above-described embodiments, etc., and conversely, it may include other layers.

[0118] Furthermore, although the semiconductor structures S1E to S1J as the fifth to ninth modified examples of the first embodiment are provided with the first light-shielding layer 61, the semiconductor structures S1E to S1J may not have the first light-shielding layer 61. Furthermore, in the semiconductor structures S1A to S1D and S1F to S1J as the first to fourth and sixth to ninth modified examples of the first embodiment, the first sealing films 51, 51B, 51C may be formed from a resin material having at least one of photosensitivity and ultraviolet absorbing properties.

[0119] According to an embodiment of the present disclosure, a photodetector suppresses deterioration of an organic photoelectric conversion layer during manufacturing. Note that the effects described in this specification are merely exemplary and are not limited thereto, and other effects may also be present. The present technology may also be configured as follows: (1) A photodetector including a semiconductor structure having an effective region in which a plurality of photodetection elements that detect irradiated light and perform photoelectric conversion are provided, and an adjacent region adjacent to the effective region, the semiconductor structure including: an organic photoelectric conversion layer extending from the effective region to the adjacent region; a sealing layer covering the organic photoelectric conversion layer, the sealing layer including a first sealing film provided in the adjacent region and including an edge located at the boundary between the effective region and the adjacent region; and a first light-shielding layer provided on the first sealing film of the sealing layer and extending from the edge toward the adjacent region. (2) The photodetector according to (1), wherein the first light-shielding layer is provided between the organic photoelectric conversion layer and the first sealing film. (3) The photodetector according to (1) or (2), further comprising a second light-shielding layer provided in a position of the first sealing film away from the edge, wherein the first light-shielding layer occupies a region corresponding to a gap between the effective region and the second light-shielding layer. (4) The photodetector according to (3), further comprising: a first electrode provided between the organic photoelectric conversion layer and the sealing layer; and a second electrode provided on the opposite side of the organic photoelectric conversion layer to the first electrode, wherein the second light-shielding layer is electrically connected to the first electrode. (6) The photodetector according to (5), further comprising: a contact portion that penetrates the first sealing film in the adjacent region. (7) The photodetector according to (3), further comprising: a first electrode provided between the organic photoelectric conversion layer and the sealing layer; and a second electrode provided on the opposite side of the organic photoelectric conversion layer to the first electrode, wherein the second light-shielding layer is electrically connected to the first electrode. (8) The photodetector according to (3) above. (9) The photodetector according to (8) above, wherein the first light-shielding layer is electrically connected to a contact portion extending from the first sealing film toward an opposite side to the second light-shielding layer in the adjacent region.(10) The photodetector according to any one of (1) to (9), wherein the sealing layer further includes a second sealing film located between the first sealing film and the organic photoelectric conversion layer and extending from the effective region to the adjacent region. (11) The photodetector according to any one of (1) to (10), wherein the first light-shielding layer includes at least one of W (tungsten), Al (aluminum), Cu (copper), TiN (titanium nitride), and TiO (titanium oxide). (12) The sealing layer is made of AlO, SiO, or ZrO. ２ , HfO ２ , and TiO ２(13) The photodetector according to any one of (1) to (12) above, wherein the semiconductor structure further includes a photoelectric conversion region provided in the effective pixel region. (14) The photodetector according to any one of (1) to (13) above, wherein a black level reference element for detecting a reference value of a black level is provided in the adjacent region. (15) A method for manufacturing a photodetector, comprising: forming an organic photoelectric conversion layer on a base body; forming a light-shielding film covering the organic photoelectric conversion layer; forming a sealing film so as to cover the light-shielding film; selectively removing a portion of the sealing film corresponding to a partial region by a first etching process to expose a portion of the light-shielding film occupying the partial region; and selectively removing the portion of the light-shielding film occupying the partial region by a second etching process. (16) The photodetector according to any one of (1) to (14), wherein the first sealing film is formed of a resin material having at least one of photosensitivity and ultraviolet absorption. (17) A photodetector comprising: a semiconductor structure having an effective region in which a plurality of photodetection elements that detect irradiated light and perform photoelectric conversion are provided, and an adjacent region adjacent to the effective region, wherein the semiconductor structure comprises: an organic photoelectric conversion layer extending from the effective region to the adjacent region; and a sealing layer covering the organic photoelectric conversion layer, the sealing layer having a first sealing film provided in the adjacent region and including an edge located at the boundary between the effective region and the adjacent region, the first sealing film being formed of a resin material having at least one of photosensitivity and ultraviolet absorption. (18) The photodetector according to (17), wherein the first sealing film covers an end face of the organic photoelectric conversion layer located in the adjacent region. (19) The photodetector according to any one of (17) to (18), wherein the upper surface of the first sealing film located on the opposite side to the organic photoelectric conversion layer is a flat surface. (20) The photodetector according to any one of (17) to (19), wherein the first sealing film has a light-blocking property against visible light.(21) The photodetector according to any one of (17) to (19), further comprising: a light-shielding layer provided on the opposite side of the first sealing film from the organic photoelectric conversion layer; and an intervening layer provided between the first sealing film and the light-shielding layer.

[0120] This application claims priority based on Japanese Patent Application No. 2024-097336, filed on June 17, 2024, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0121] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. A photodetector comprising a semiconductor structure having an effective area in which a plurality of photodetection elements that detect incident light and perform photoelectric conversion are provided, and an adjacent area adjacent to the effective area, wherein the semiconductor structure comprises: an organic photoelectric conversion layer extending from the effective area to the adjacent area; a sealing layer having a first sealing film provided in the adjacent area and including an edge located at the boundary between the effective area and the adjacent area, the sealing layer covering the organic photoelectric conversion layer; and a first light-shielding layer provided on the first sealing film of the sealing layer and extending from the position of the edge toward the adjacent area.

2. The photodetector according to claim 1, wherein the first light-shielding layer is provided between the organic photoelectric conversion layer and the first sealing film.

3. The photodetector according to claim 1, further comprising a second light-shielding layer provided at a position of the first sealing film away from the edge, the first light-shielding layer occupying an area corresponding to the gap between the effective area and the second light-shielding layer.

4. The photodetector element according to claim 3, wherein the second light-shielding layer is electrically connected to the first light-shielding layer.

5. The photodetector according to claim 3, further comprising: a first electrode provided between the organic photoelectric conversion layer and the sealing layer; and a second electrode provided on the opposite side of the organic photoelectric conversion layer from the first electrode, wherein the second light-shielding layer is electrically connected to the first electrode.

6. The photodetector according to claim 5, wherein the second light-shielding layer is electrically connected to a contact portion that penetrates the first sealing film in the adjacent region.

7. The photodetector according to claim 3, wherein the second light-shielding layer has a portion provided on the opposite side of the first sealing film from the organic photoelectric conversion layer.

8. The photodetector according to claim 3, wherein a portion of the second light-shielding layer overlaps a portion of the first light-shielding layer in the thickness direction.

9. The photodetector according to claim 8, wherein the first light-shielding layer is electrically connected to a contact portion extending from the first sealing film toward the opposite side to the second light-shielding layer in the adjacent region.

10. The photodetector according to claim 1, wherein the sealing layer further comprises a second sealing film positioned between the first sealing film and the organic photoelectric conversion layer and extending from the effective region to the adjacent region.

11. The photodetector according to claim 1, wherein the first light-shielding layer contains at least one of W (tungsten), Al (aluminum), Cu (copper), TiN (titanium nitride), and TiO (titanium oxide).

12. The sealing layer is made of AlO, SiO, ZrO ２ , HfO ２ , and TiO ２ The photodetector according to claim 1 , comprising at least one of the following:

13. The photodetector according to claim 1, wherein the semiconductor structure further comprises a photoelectric conversion region provided in the effective pixel region.

14. The photodetector according to claim 1, wherein the adjacent region is provided with a black level reference element for detecting a reference value of the black level.

15. The photodetector according to claim 1, wherein the first sealing film is formed from a resin material having at least one of photosensitivity and ultraviolet absorption properties.

16. A photodetector comprising a semiconductor structure having an effective area in which a plurality of photodetection elements that detect incident light and perform photoelectric conversion are provided, and an adjacent area adjacent to the effective area, wherein the semiconductor structure comprises: an organic photoelectric conversion layer extending from the effective area to the adjacent area; and a sealing layer covering the organic photoelectric conversion layer, the sealing layer having a first sealing film provided in the adjacent area and including an edge located at the boundary between the effective area and the adjacent area, the first sealing film being formed from a resin material having at least one of photosensitivity and ultraviolet absorption properties.

17. The photodetector according to claim 16, wherein the first sealing film covers an end face of the organic photoelectric conversion layer located in the adjacent region.

18. The photodetector according to claim 16, wherein the upper surface of the first sealing film located on the opposite side to the organic photoelectric conversion layer is flat.

19. The photodetector according to claim 16, wherein the first sealing film has a light-blocking property against visible light.

20. The photodetector according to claim 16, further comprising: a light-shielding layer provided on the opposite side of the first sealing film from the organic photoelectric conversion layer; and an intervening layer provided between the first sealing film and the light-shielding layer.

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