Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, and electronic device manufacturing method

Abstract

Provided are: an actinic ray-sensitive or radiation-sensitive resin composition containing a resin in which the polarity increases by the action of an acid, and an onium salt having a specific structure; a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern formation method using the actinic ray-sensitive or radiation-sensitive resin composition; and an electronic device manufacturing method.

Description

Actinic ray- or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device

[0001] The present invention relates to an actinic ray- or radiation-sensitive resin composition, a resist film, a pattern forming method, and a method for manufacturing an electronic device. More specifically, the present invention relates to an actinic ray- or radiation-sensitive resin composition, a resist film, a pattern forming method, and a method for manufacturing an electronic device that can be suitably used in an ultra-microlithography process applicable to processes for manufacturing VLSI (Large Scale Integration) and high-capacity microchips, processes for creating molds for nanoimprinting, and processes for manufacturing high-density information recording media, as well as other photofabrication processes.

[0002] Conventionally, in the manufacturing process of semiconductor devices such as ICs (Integrated Circuits) and LSIs (Large Scale Integration), microfabrication is performed by lithography using resist compositions. In recent years, with the increasing integration density of integrated circuits, there has been a demand for ultrafine pattern formation in the submicron or quarter-micron range. Accordingly, there has been a trend toward shorter exposure wavelengths, from g-line to i-line and then to KrF excimer laser light, and currently, exposure machines using ArF excimer lasers with a wavelength of 193 nm as a light source have been developed. Furthermore, as a technique for further improving resolution, the so-called immersion method, in which a high refractive index liquid (hereinafter also referred to as "immersion liquid") is filled between the projection lens and the sample, has been developed.

[0003] Currently, in addition to excimer laser light, lithography using electron beams (EB), X-rays, extreme ultraviolet rays (EUV), etc. is also being developed. Accordingly, resist compositions that are effectively sensitive to various types of actinic rays or radiation have been developed.

[0004] Patent Document 1 describes an actinic ray-sensitive or radiation-sensitive resin composition containing a compound that generates an acid having a specific structure upon irradiation with actinic rays or radiation.

[0005] International Publication No. 2018 / 168252

[0006] Recently, the performance required of resist compositions has become increasingly high. In particular, there is a demand for improved line width roughness (LWR) performance when forming fine patterns. LWR performance refers to the ability to reduce the LWR of a pattern. It is also required that the cross-sectional shape of the formed pattern is rectangular (excellent pattern shape).

[0007] An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition that exhibits excellent LWR performance and pattern shape. Another object of the present invention is to provide a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern formation method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

[0008] The present inventors have found that the above problems can be solved by the following configuration.

[0009] [1] An actinic ray-sensitive or radiation-sensitive resin composition comprising a resin (A) whose polarity increases under the action of an acid, and an onium salt (B) represented by the following formula (1):

[0010]

[0011] In formula (1), Ra represents a hydrogen atom or a hydrocarbon group which may have a heteroatom, Rb represents a hydrogen atom or a substituent, Z ＋ represents an organic cation. Ra and Rb may be bonded to form a ring. However, when Ra represents a hydrocarbon group which may have a heteroatom, Ra is bonded to a carbonyl group via a carbon atom. Furthermore, when Rb does not contain a cyclic structure, Ra does not represent an unsubstituted methyl group or an unsubstituted ethyl group. Z ＋The valence of the organic cation represented by may be monovalent or divalent or higher. [2] The actinic ray-sensitive or radiation-sensitive resin composition according to [1], wherein the onium salt (B) has a fluorine atom content of 10% by mass or less. [3] The actinic ray-sensitive or radiation-sensitive resin composition according to [1] or [2], wherein the onium salt (B) has a fluorine atom content of 0% by mass. [4] The actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [3], wherein Rb in formula (1) contains a cyclic structure. [5] The actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [4], wherein Rb in formula (1) represents a substituent represented by the following formula (X):

[0012]

[0013] In formula (X), R Ｘ１ represents an organic group, L Ｘ１ represents a single bond or a divalent linking group. * represents a bonding position. [6] R in the above formula (X) Ｘ１ [7] The actinic ray-sensitive or radiation-sensitive resin composition according to [5], wherein L in the formula (X) represents an aliphatic hydrocarbon group having 5 or more carbon atoms which may have a heteroatom. Ｘ１

[0013] The actinic ray-sensitive or radiation-sensitive resin composition according to [5] or [6], wherein the compound (I) contains -COO-. [8] A resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [7]. [9] A pattern forming method comprising the steps of forming a resist film on a substrate using the actinic ray-sensitive or radiation-sensitive resin composition according to any one of [1] to [7], exposing the resist film to light, and developing the exposed resist film using a developer.

[10] A method for producing an electronic device, comprising the pattern forming method according to [9].

[0014] The present invention can provide an actinic ray-sensitive or radiation-sensitive resin composition having excellent LWR performance and pattern shape. The present invention can also provide a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern formation method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

[0015] The present invention will be described in detail below. The following description of the components will be based on representative embodiments of the present invention, but the present invention is not limited to such embodiments.

[0016] In this specification, "actinic rays" or "radiation" refers to, for example, the bright line spectrum of a mercury lamp, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays (EUV), X-rays, soft X-rays, and electron beams (EB). In this specification, "light" refers to actinic rays or radiation. Unless otherwise specified, in this specification, "exposure" includes not only exposure using the bright line spectrum of a mercury lamp, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays, X-rays, and EUV, but also drawing using particle beams such as electron beams and ion beams. In this specification, the word "to" is used to mean that the numerical values ​​before and after it are included as the lower and upper limits.

[0017] In this specification, (meth)acrylate refers to at least one of acrylate and methacrylate, and (meth)acrylic acid refers to at least one of acrylic acid and methacrylic acid.

[0018] In this specification, the weight average molecular weight (Mw), number average molecular weight (Mn), and dispersity (also referred to as molecular weight distribution) (Mw / Mn) of a resin are defined as polystyrene-equivalent values ​​measured by gel permeation chromatography (GPC) using a GPC apparatus (HLC-8120GPC manufactured by Tosoh Corporation) (solvent: tetrahydrofuran, flow rate (sample injection amount): 10 μL, column: TSK gel Multipore HXL-M manufactured by Tosoh Corporation, column temperature: 40° C., flow rate: 1.0 mL / min, detector: differential refractive index detector).

[0019] In the description of groups (atomic groups) in this specification, unless contrary to the spirit of the present invention, notations that do not specify whether they are substituted or unsubstituted include groups that contain a substituent as well as groups that do not have a substituent. For example, the term "alkyl group" includes not only alkyl groups that do not have a substituent (unsubstituted alkyl groups) but also alkyl groups that have a substituent (substituted alkyl groups). Furthermore, the term "organic group" in this specification refers to a group containing at least one carbon atom. Unless otherwise specified, a monovalent substituent is preferred as the substituent. Examples of the substituent include monovalent non-metallic atomic groups excluding hydrogen atoms, which can be selected, for example, from the following substituents T:

[0020] (Substituent T) Examples of the substituent T include halogen atoms such as a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom; alkoxy groups such as a methoxy group, an ethoxy group, and a tert-butoxy group; a cycloalkyloxy group; an aryloxy group such as a phenoxy group and a p-tolyloxy group; an alkoxycarbonyl group such as a methoxycarbonyl group and a butoxycarbonyl group; a cycloalkyloxycarbonyl group; an aryloxycarbonyl group such as a phenoxycarbonyl group; an acyloxy group such as an acetoxy group, a propionyloxy group, and a benzoyloxy group; an acyl group such as an acetyl group, a benzoyl group, an isobutyryl group, an acryloyl group, a methacryloyl group, and a methoxalyl group; a sulfanyl group; alkylsulfanyl groups such as a methylsulfanyl group and a tert-butylsulfanyl group; and arylsulfanyl groups such as a phenylsulfanyl group and a p-tolylsulfanyl group. Examples of the substituent T include an aryl group, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an aromatic heterocyclic group (heteroaryl group), a hydroxy group, a carboxyl group, a formyl group, a sulfo group, a cyano group, an alkylaminocarbonyl group, an arylaminocarbonyl group, a sulfonamido group, a silyl group, an amino group, a carbamoyl group, a cyano group, a nitro group, a cycloalkyloxycarbonyl group, a heteroaryloxycarbonyl group, an alkylcarbonyl group, an arylcarbonyl group, a heteroarylcarbonyl group, a cycloalkylcarbonyl group, a cycloalkyloxy group, a heteroaryloxy group, an alkylsulfonyl group, an arylsulfonyl group, a cycloalkylsulfonyl group, a heteroarylsulfonyl group, an alkylsulfinyl group, an arylsulfinyl group, a cycloalkylsulfinyl group, a heteroarylsulfinyl group, and the like. In addition, when these substituents can further have one or more substituents, examples of the substituent T also include groups having one or more substituents selected from the above-mentioned substituents as the further substituents (e.g., a monoalkylamino group, a dialkylamino group, an arylamino group, etc.).

[0021] In this specification, the bonding direction of a divalent group is not limited unless otherwise specified. For example, when Y is -COO- in a compound represented by the formula "X-Y-Z", Y may be -CO-O- or -O-CO-. The compound may be either "X-CO-O-Z" or "X-O-CO-Z".

[0022] In this specification, the acid dissociation constant (pKa) refers to the pKa in an aqueous solution, and specifically, is a value determined by calculation using the following software package 1 based on a database of Hammett's substituent constants and known literature values. All pKa values ​​described in this specification are values ​​determined by calculation using this software package. Software package 1: Advanced Chemistry Development (ACD / Labs) Software V8.14 for Solaris (1994-2007 ACD / Labs).

[0023] The pKa can also be calculated by molecular orbital calculation. A specific method for this is to calculate the pKa of H in an aqueous solution based on the thermodynamic cycle. ＋ One method is to calculate the dissociation free energy. ＋ The dissociation free energy can be calculated by, for example, DFT (density functional theory), but various other methods have been reported in the literature, and the method is not limited to these. There are several software programs that can perform DFT, and Gaussian 16 is an example.

[0024] In this specification, pKa refers to a value calculated based on a database of Hammett's substituent constants and publicly known literature values ​​using software package 1, as described above, but if pKa cannot be calculated by this method, a value obtained by Gaussian 16 based on DFT (density functional theory) will be adopted. In this specification, pKa refers to "pKa in aqueous solution" as described above, but if pKa in aqueous solution cannot be calculated, "pKa in dimethyl sulfoxide (DMSO) solution" will be adopted.

[0025] In this specification, the term "solid content" refers to components that form a film (preferably a resist film) formed using the actinic ray-sensitive or radiation-sensitive resin composition, and does not include solvents. Furthermore, any component that forms a film (preferably a resist film) formed using the actinic ray-sensitive or radiation-sensitive resin composition is considered to be a solid content even if it is in a liquid state.

[0026] <Actinic ray-sensitive or radiation-sensitive resin composition> The actinic ray-sensitive or radiation-sensitive resin composition of the present invention (also referred to as "the composition of the present invention") is an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) whose polarity increases under the action of an acid, and an onium salt (B) represented by the following formula (1):

[0027]

[0028] In formula (1), Ra represents a hydrogen atom or a hydrocarbon group which may have a heteroatom, Rb represents a hydrogen atom or a substituent, Z ＋ represents an organic cation. Ra and Rb may be bonded to form a ring. However, when Ra represents a hydrocarbon group which may have a heteroatom, Ra is bonded to a carbonyl group via a carbon atom. Furthermore, when Rb does not contain a cyclic structure, Ra does not represent an unsubstituted methyl group or an unsubstituted ethyl group. Z ＋ The organic cation represented by may have a valence of one, two or more.

[0029] The mechanism by which the composition of the present invention has excellent LWR performance and pattern shape is not clear, but the present inventors have speculated as follows. However, the present invention is not limited by the speculated mechanism below. The onium salt (B) is SO ３ －The compound includes an organic anion having a structure in which a cyano group and a carbonyl group are bonded to a carbon atom to which the compound is bonded. Because the cyano group and the carbonyl group are more hydrophilic than the fluorine atom, it is believed that the compatibility between the onium salt (B) and the resin (A), whose polarity increases with the action of an acid, is improved, and acid variation is suppressed. Furthermore, the presence of the cyano group and the carbonyl group is believed to enhance interaction with the resin (A), whose polarity increases with the action of an acid, and to suppress diffusion of the acid. These effects are believed to improve LWR performance and pattern shape.

[0030] The composition of the present invention is typically a resist composition, and may be either a positive resist composition or a negative resist composition. The composition of the present invention may be a resist composition for alkali development or a resist composition for organic solvent development. The composition of the present invention may be either a chemically amplified resist composition or a non-chemically amplified resist composition. The composition of the present invention is preferably a chemically amplified resist composition. An actinic ray-sensitive or radiation-sensitive film can be formed using the composition of the present invention. The actinic ray-sensitive or radiation-sensitive film formed using the composition of the present invention is typically a resist film. First, the various components of the composition of the present invention will be described in detail below.

[0031] [Resin whose polarity increases under the action of acid] The composition of the present invention contains a resin (A) (also simply referred to as "resin (A)") whose polarity increases under the action of acid. The resin (A) preferably contains a group that decomposes under the action of acid and increases its polarity (also referred to as an "acid-decomposable group"), and more preferably contains a repeating unit having an acid-decomposable group. When the resin (A) has an acid-decomposable group, a positive pattern is preferably formed when an alkaline developer is used as the developer in a pattern formation method using the composition of the present invention, and a negative pattern is preferably formed when an organic developer is used as the developer.

[0032] (Repeating unit having acid-decomposable group) The acid-decomposable group is preferably a group that decomposes under the action of an acid to generate a polar group. The acid-decomposable group preferably has a structure in which a polar group is protected with a group that leaves under the action of an acid (leaving group). It is preferable that the resin (A) has a repeating unit that decomposes under the action of an acid to generate a polar group, and thereby the polarity of the resin (A) is increased under the action of an acid, thereby increasing the solubility in an alkaline developer and decreasing the solubility in an organic solvent. The polar group is preferably an alkali-soluble group, such as a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group, a sulfonic acid group, a phosphate group, a sulfonamide group, a sulfonylimide group, a (alkylsulfonyl) (alkylcarbonyl) methylene group, a (alkylsulfonyl) (alkylcarbonyl) imide group, a bis(alkylcarbonyl) methylene group, a bis(alkylcarbonyl) imide group, a bis(alkylsulfonyl) methylene group, a bis(alkylsulfonyl) imide group, a tris(alkylcarbonyl) methylene group, and an acidic group such as a tris(alkylsulfonyl) methylene group, and an alcoholic hydroxyl group. The polar group is preferably a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), or a sulfonic acid group.

[0033] Examples of the group that is eliminated by the action of an acid include groups represented by formulae (Y1) to (Y4). Formula (Y1): —C(Rx １ ) (Rx ２ ) (Rx ３ ) Formula (Y2): -C(=O)OC(Rx １ ) (Rx ２ ) (Rx ３ ) Formula (Y3): -C(R ３６ ) (R ３７ ) (OR ３８ ) Formula (Y4): -C(Rn)(H)(Ar)

[0034] In formula (Y1) and formula (Y2), Rx １ ~Rx ３Rx each independently represents an alkyl group (linear or branched), a cycloalkyl group (monocyclic or polycyclic), an alkenyl group (linear or branched), or an aryl group (monocyclic or polycyclic). １ ~Rx ３ When all of Rx are alkyl groups (linear or branched), １ ~Rx ３ Preferably, at least two of Rx are methyl groups. １ ~Rx ３ Rx preferably each independently represents a linear or branched alkyl group, and more preferably represents a linear alkyl group. １ ~Rx ３ may be bonded to form a monocyclic or polycyclic ring. １ ~Rx ３ The alkyl group of Rx is preferably an alkyl group having 1 to 5 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group. １ ~Rx ３ The cycloalkyl group of Rx is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. １ ~Rx ３ The cycloalkyl group may be a cycloalkyl group having 3 to 20 carbon atoms. １ ~Rx ３ The aryl group in Rx is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group. １ ~Rx ３ The alkenyl group of Rx is preferably a vinyl group. １ ~Rx ３ The ring formed by combining the two is preferably a cycloalkyl group. １ ~Rx ３The cycloalkyl group formed by bonding the two is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group, and more preferably a monocyclic cycloalkyl group having 5 to 6 carbon atoms. １ ~Rx ３ In the cycloalkyl group formed by bonding these two, one of the methylene groups constituting the ring may be replaced with a heteroatom such as an oxygen atom, a group containing a heteroatom such as a carbonyl group, or a vinylidene group. In these cycloalkyl groups, one or more of the ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group. The group represented by formula (Y1) or formula (Y2) can be, for example, Rx １ is a methyl group or an ethyl group, and Rx ２ and Rx ３ and Rx are preferably bonded to form the above-mentioned cycloalkyl group. When the composition of the present invention is, for example, a resist composition for EUV exposure, １ ~Rx ３ an alkyl group, a cycloalkyl group, an alkenyl group, an aryl group, and Rx １ ~Rx ３ The ring formed by bonding these two groups preferably further has a fluorine atom or an iodine atom as a substituent.

[0035] In formula (Y3), R ３６ ~R ３８ R each independently represents a hydrogen atom or a monovalent organic group. ３７ and R ３８ may be bonded to each other to form a ring. Examples of the monovalent organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. ３６is also preferably a hydrogen atom. The alkyl group, cycloalkyl group, aryl group, and aralkyl group may contain a heteroatom such as an oxygen atom and / or a group containing a heteroatom such as a carbonyl group. For example, in the alkyl group, cycloalkyl group, aryl group, and aralkyl group, one or more methylene groups may be replaced with a heteroatom such as an oxygen atom and / or a group containing a heteroatom such as a carbonyl group. R ３８ may bond with another substituent on the main chain of the repeating unit to form a ring. ３８ The group formed by bonding together R and another substituent on the main chain of the repeating unit is preferably an alkylene group such as a methylene group. ３６ ~R ３８ and a monovalent organic group represented by R ３７ and R ３８ It is also preferable that the ring formed by bonding these groups together further has a fluorine atom or an iodine atom as a substituent.

[0036] Formula (Y3) is preferably a group represented by the following formula (Y3-1).

[0037]

[0038] Here, L Ｙ１ and L Ｙ２ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a group formed by combining these (for example, a group formed by combining an alkyl group and an aryl group). Ｙ１ represents a single bond or a divalent linking group. Ｙ１ represents an alkyl group which may contain a heteroatom, a cycloalkyl group which may contain a heteroatom, an aryl group which may contain a heteroatom, an amino group, an ammonium group, a mercapto group, a cyano group, an aldehyde group, or a group which combines these (for example, a group which combines an alkyl group and a cycloalkyl group). In the alkyl group and the cycloalkyl group, for example, one of the methylene groups may be replaced with a heteroatom such as an oxygen atom, or a group which contains a heteroatom such as a carbonyl group.Ｙ１ and L Ｙ２ Preferably, one of Q is a hydrogen atom, and the other is an alkyl group, a cycloalkyl group, an aryl group, or a group in which an alkylene group and an aryl group are combined. Ｙ１ , M Ｙ１ , and L Ｙ１ At least two of the groups may be bonded to form a ring (preferably a 5- or 6-membered ring). Ｙ２ is preferably a secondary or tertiary alkyl group, and more preferably a tertiary alkyl group. Examples of secondary alkyl groups include an isopropyl group, a cyclohexyl group, and a norbornyl group, and examples of tertiary alkyl groups include a tert-butyl group and an adamantane group. In these embodiments, the Tg (glass transition temperature) and activation energy are increased, thereby ensuring film strength and suppressing fogging.

[0039] When the composition of the present invention is, for example, a resist composition for EUV exposure, L Ｙ１ and L Ｙ２ It is also preferable that the alkyl group, cycloalkyl group, aryl group, and group combining these groups represented by the formula (I) further have a fluorine atom or an iodine atom as a substituent. It is also preferable that the alkyl group, cycloalkyl group, aryl group, and aralkyl group contain a heteroatom such as an oxygen atom in addition to the fluorine atom and iodine atom. Specifically, in the alkyl group, cycloalkyl group, aryl group, and aralkyl group, for example, one of the methylene groups may be replaced with a heteroatom such as an oxygen atom, or a group containing a heteroatom such as a carbonyl group. When the composition of the present invention is, for example, a resist composition for EUV exposure, Q Ｙ１ In the alkyl group which may contain a heteroatom, the cycloalkyl group which may contain a heteroatom, the aryl group which may contain a heteroatom, the amino group, the ammonium group, the mercapto group, the cyano group, the aldehyde group, and groups which are combinations thereof, represented by the following formula (Y3-1), it is also preferable that the heteroatom is a heteroatom selected from the group consisting of a fluorine atom, an iodine atom, and an oxygen atom. In formula (Y3-1), * represents a bonding position.

[0040] In formula (Y4), Ar represents an aromatic ring group. Rn represents an alkyl group, a cycloalkyl group, or an aryl group. Rn and Ar may be bonded to each other to form a non-aromatic ring. Ar is preferably an aryl group. When the composition of the present invention is, for example, a resist composition for EUV exposure, it is also preferable that the aromatic ring group represented by Ar and the alkyl group, cycloalkyl group, and aryl group represented by Rn have a fluorine atom or an iodine atom as a substituent.

[0041] In terms of excellent acid decomposition properties of the repeating unit, when a non-aromatic ring is directly bonded to the polar group (or a residue thereof) in the leaving group protecting the polar group, it is also preferable that the ring atom in the non-aromatic ring adjacent to the ring atom directly bonded to the polar group (or a residue thereof) does not have a halogen atom such as a fluorine atom as a substituent.

[0042] The group that is eliminated by the action of an acid may also be a 2-cyclopentenyl group having a substituent (such as an alkyl group), such as a 3-methyl-2-cyclopentenyl group, or a cyclohexyl group having a substituent (such as an alkyl group), such as a 1,1,4,4-tetramethylcyclohexyl group.

[0043] The repeating unit having an acid-decomposable group is also preferably a repeating unit represented by formula (HA).

[0044]

[0045] L １Ｈ represents a divalent linking group which may have a fluorine atom or an iodine atom, R １Ｈ represents a hydrogen atom, a fluorine atom, an iodine atom, an alkyl group which may have a fluorine atom or an iodine atom, or an aryl group which may have a fluorine atom or an iodine atom; R ２Ｈ represents a leaving group which is eliminated by the action of an acid and may have a fluorine atom or an iodine atom. １Ｈ , R １Ｈ , and R ２Ｈ At least one of L has a fluorine atom or an iodine atom. １ＨExamples of the divalent linking group which may have a fluorine atom or an iodine atom and is represented by the formula: ２ -, hydrocarbon groups which may have a fluorine atom or an iodine atom (for example, alkylene groups, cycloalkylene groups, alkenylene groups, arylene groups, etc.), and linking groups in which a plurality of these groups are linked together. １Ｈ As the alkylene group, -CO-, an arylene group, or -arylene group-alkylene group having a fluorine atom or an iodine atom- is preferred, and -CO- or -arylene group-alkylene group having a fluorine atom or an iodine atom- is more preferred. As the arylene group, a phenylene group is preferred. The alkylene group may be linear or branched. The number of carbon atoms in the alkylene group is not particularly limited, but is preferably 1 to 10, and more preferably 1 to 3. The total number of fluorine atoms and iodine atoms contained in the alkylene group having a fluorine atom or an iodine atom is not particularly limited, but is preferably 2 or more, more preferably 2 to 10, and even more preferably 3 to 6.

[0046] R １Ｈ The alkyl group represented by R may be linear or branched. The number of carbon atoms in the alkyl group is not particularly limited, but is preferably 1 to 10, and more preferably 1 to 3. １Ｈ The total number of fluorine atoms and iodine atoms contained in the alkyl group having a fluorine atom or an iodine atom, represented by the formula (I), is not particularly limited, but is preferably 1 or more, more preferably 1 to 5, and even more preferably 1 to 3. １Ｈ The alkyl group represented by the formula (I) may contain a heteroatom other than a halogen atom, such as an oxygen atom.

[0047] R ２Ｈ Examples of the leaving group which may have a fluorine atom or an iodine atom and which is represented by the formula (Y1) to (Y4) above include the leaving groups which may have a fluorine atom or an iodine atom.

[0048] The repeating unit having an acid-decomposable group is also preferably a repeating unit represented by formula (AI).

[0049]

[0050] In formula (AI), Xa １ represents a hydrogen atom or an alkyl group which may have a substituent. T represents a single bond or a divalent linking group. Rx １ ~Rx ３ each independently represents an alkyl group (linear or branched), a cycloalkyl group (monocyclic or polycyclic), an alkenyl group (linear or branched), or an aryl group (monocyclic or polycyclic). １ ~Rx ３ When all of Rx are alkyl groups (linear or branched), １ ~Rx ３ Preferably, at least two of Rx are methyl groups. １ ~Rx ３ may be bonded to form a monocyclic or polycyclic ring (such as a monocyclic or polycyclic cycloalkyl group).

[0051] Xa １ Examples of the alkyl group represented by the formula (I) which may have a substituent include a methyl group or a —CH ２ -R １１ Examples of the group include a group represented by the following formula: １１ represents a halogen atom (such as a fluorine atom), a hydroxyl group, or a monovalent organic group. １１ Examples of the monovalent organic group represented by the formula (I) include an alkyl group having 5 or less carbon atoms which may be substituted with a halogen atom, an acyl group having 5 or less carbon atoms which may be substituted with a halogen atom, and an alkoxy group having 5 or less carbon atoms which may be substituted with a halogen atom, and an alkyl group having 3 or less carbon atoms is preferred, and a methyl group is more preferred. １ is preferably a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

[0052] Examples of the divalent linking group for T include an alkylene group, an aromatic ring group, a -COO-Rt- group, and a -O-Rt- group. In the formula, Rt represents an alkylene group or a cycloalkylene group. T is preferably a single bond or a -COO-Rt- group. When T represents a -COO-Rt- group, Rt is preferably an alkylene group having 1 to 5 carbon atoms, and is preferably a -CH ２- group, -(CH ２ ) ２ - group, or -(CH ２ ) ３ The - group is more preferred.

[0053] Rx １ ~Rx ３ The alkyl group of Rx is preferably an alkyl group having 1 to 4 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group. １ ~Rx ３ The cycloalkyl group of Rx is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. １ ~Rx ３ The cycloalkyl group may be a cycloalkyl group having 3 to 20 carbon atoms. １ ~Rx ３ The aryl group in Rx is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group. １ ~Rx ３ The alkenyl group of Rx is preferably a vinyl group. １ ~Rx ３ As the cycloalkyl group formed by combining the above two, a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group is preferred. Polycyclic cycloalkyl groups such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group are also preferred. Among these, a monocyclic cycloalkyl group having 5 to 6 carbon atoms is preferred. Rx １ ~Rx ３ The cycloalkyl group formed by bonding these two may have, for example, one of the methylene groups constituting the ring replaced with a heteroatom such as an oxygen atom, a group containing a heteroatom such as a carbonyl group, or a vinylidene group. Furthermore, in these cycloalkyl groups, one or more of the ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group. The repeating unit represented by formula (AI) can be, for example, Rx １is a methyl group or an ethyl group, and Rx ２ and Rx ３ and are preferably bonded to form the above-mentioned cycloalkyl group.

[0054] When each of the above groups has a substituent, examples of the substituent include an alkyl group (having 1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (having 1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group (having 2 to 6 carbon atoms). The number of carbon atoms in the substituent is preferably 8 or less.

[0055] The repeating unit represented by formula (AI) may be an acid-decomposable (meth)acrylic acid tertiary alkyl ester repeating unit (Xa １ represents a hydrogen atom or a methyl group, and T represents a single bond).

[0056] Specific examples of the repeating unit having an acid-decomposable group are shown below, but the invention is not limited thereto. １ is H, CH ３ , C.F. ３ , or CH ２ Rxa and Rxb each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

[0057]

[0058] The resin (A) may have a repeating unit having an acid-decomposable group containing an unsaturated bond as a repeating unit having an acid-decomposable group. As the repeating unit having an acid-decomposable group containing an unsaturated bond, a repeating unit represented by formula (HB) is preferred.

[0059]

[0060] In formula (HB), Xb represents a hydrogen atom, a halogen atom, or an alkyl group which may have a substituent. L represents a single bond or a divalent linking group which may have a substituent. Ry １ ~Ry ３ each independently represents a linear or branched alkyl group, a monocyclic or polycyclic cycloalkyl group, an alkenyl group, an alkynyl group, or a monocyclic or polycyclic aryl group, provided that Ry１ ~Ry ３ At least one of R represents an alkenyl group, an alkynyl group, a monocyclic or polycyclic cycloalkenyl group, or a monocyclic or polycyclic aryl group. １ ~Ry ３ may be bonded to form a monocyclic or polycyclic ring (such as a monocyclic or polycyclic cycloalkyl group or cycloalkenyl group).

[0061] The alkyl group represented by Xb, which may have a substituent, is, for example, a methyl group or —CH ２ -R １１ Examples of the group include a group represented by the following formula: １１ represents a halogen atom (such as a fluorine atom), a hydroxyl group, or a monovalent organic group, and examples thereof include an alkyl group having 5 or less carbon atoms which may be substituted with a halogen atom, an acyl group having 5 or less carbon atoms which may be substituted with a halogen atom, and an alkoxy group having 5 or less carbon atoms which may be substituted with a halogen atom, preferably an alkyl group having 3 or less carbon atoms, and more preferably a methyl group. Xb is preferably a hydrogen atom, a fluorine atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

[0062] Examples of the divalent linking group for L include a -Rt- group, a -CO- group, a -COO-Rt- group, a -COO-Rt-CO- group, a -Rt-CO- group, and a -O-Rt- group. In the formula, Rt represents an alkylene group, a cycloalkylene group, or an aromatic ring group, and an aromatic ring group is preferable. L is preferably a -Rt- group, a -CO- group, a -COO-Rt-CO- group, or a -Rt-CO- group. Rt may have a substituent such as a halogen atom, a hydroxyl group, or an alkoxy group.

[0063] Ry １ ~Ry ３ The alkyl group of Ry is preferably an alkyl group having 1 to 4 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a t-butyl group. １ ~Ry ３The cycloalkyl group of Ry is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. １ ~Ry ３ The cycloalkyl group may be a cycloalkyl group having 3 to 20 carbon atoms. １ ~Ry ３ The aryl group in Ry is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group. １ ~Ry ３ The alkenyl group in Ry is preferably a vinyl group. １ ~Ry ３ The alkynyl group in Ry is preferably an ethynyl group. １ ~Ry ３ The cycloalkenyl group of Ry is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, which has a double bond in part thereof. １ ~Ry ３ The cycloalkyl group formed by combining the above two groups is preferably a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. Among these, a monocyclic cycloalkyl group having 5 to 6 carbon atoms is more preferred. １ ~Ry ３ The cycloalkyl group or cycloalkenyl group formed by bonding two of the above is, for example, a group in which one of the methylene groups constituting the ring is substituted with a heteroatom such as an oxygen atom, a carbonyl group, or —SO ２ - group and -SO ３ The repeating unit represented by formula (HB) may be substituted with a group containing a hetero atom such as a - group, a vinylidene group, or a combination thereof. In addition, in these cycloalkyl groups or cycloalkenyl groups, one or more ethylene groups constituting the cycloalkane ring or cycloalkene ring may be substituted with a vinylene group. The repeating unit represented by formula (HB) can be, for example, Ry １is a methyl group, an ethyl group, a vinyl group, an allyl group, or an aryl group, and Ry ２ and Ry ３ and are bonded to form the above-mentioned cycloalkyl group or cycloalkenyl group.

[0064] When each of the above groups has a substituent, examples of the substituent include an alkyl group (having 1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (having 1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group (having 2 to 6 carbon atoms). The number of carbon atoms in the substituent is preferably 8 or less.

[0065] The repeating unit represented by formula (HB) is preferably an acid-decomposable (meth)acrylic acid tertiary ester repeating unit (a repeating unit in which Xb represents a hydrogen atom or a methyl group and L represents a —CO— group), an acid-decomposable hydroxystyrene tertiary alkyl ether repeating unit (a repeating unit in which Xb represents a hydrogen atom or a methyl group and L represents a phenyl group), or an acid-decomposable styrene carboxylic acid tertiary ester repeating unit (a repeating unit in which Xb represents a hydrogen atom or a methyl group and L represents a —Rt—CO— group (Rt is an aromatic group)).

[0066] The content of the repeating unit having an acid-decomposable group containing an unsaturated bond is preferably 15 mol% or more, more preferably 20 mol% or more, and even more preferably 30 mol% or more, relative to all repeating units in the resin (A). The upper limit is preferably 80 mol% or less, more preferably 70 mol% or less, and even more preferably 60 mol% or less, relative to all repeating units in the resin (A). Specific examples of repeating units having an acid-decomposable group containing an unsaturated bond include the repeating units described in paragraphs

[0067] to

[0071] of WO 2022 / 024928. The above descriptions are incorporated herein by reference.

[0067] The content of the repeating units having an acid-decomposable group is preferably 15 mol% or more, more preferably 20 mol% or more, and even more preferably 30 mol% or more, based on the total repeating units in the resin (A), and the upper limit thereof is preferably 90 mol% or less, more preferably 80 mol% or less, even more preferably 70 mol% or less, and particularly preferably 60 mol% or less, based on the total repeating units in the resin (A).

[0068] Resin (A) may contain at least one repeating unit selected from the group consisting of Group A below, and / or at least one repeating unit selected from the group consisting of Group B below. Group A: A group consisting of the following repeating units (20) to (25). (20) A repeating unit having an acid group; (21) A repeating unit having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom; (22) A repeating unit having at least one group selected from the group consisting of a lactone group, a sultone group, and a carbonate group; (23) A repeating unit having a photoacid-generating group; (24) A repeating unit represented by formula (V-1) or formula (V-2); (25) A repeating unit for reducing main chain mobility. The repeating units represented by formulas (A) to (E), which will be described later, correspond to (25) A repeating unit for reducing main chain mobility. Group B: A group consisting of the following repeating units (30) to (32). (30) A repeating unit having at least one group selected from a lactone group, a sultone group, a carbonate group, a hydroxyl group, a cyano group, and an alkali-soluble group. (31) A repeating unit having an alicyclic hydrocarbon structure and not exhibiting acid decomposition. (32) A repeating unit represented by formula (III) having neither a hydroxyl group nor a cyano group.

[0069] The resin (A) preferably has an acid group, and as described below, preferably contains a repeating unit having an acid group. The definition of the acid group will be explained later together with preferred embodiments of the repeating unit having an acid group. When the resin (A) has an acid group, the interaction between the resin (A) and the acid generated from the photoacid generator is more excellent. As a result, the diffusion of the acid is further suppressed, and the cross-sectional shape of the formed pattern can be more rectangular.

[0070] The resin (A) may have at least one repeating unit selected from the group consisting of Group A. When the composition of the present invention is used as an actinic ray-sensitive or radiation-sensitive resin composition for EUV exposure, the resin (A) preferably has at least one repeating unit selected from the group consisting of Group A. The resin (A) may contain at least one of a fluorine atom and an iodine atom. When the composition of the present invention is used as an actinic ray-sensitive or radiation-sensitive resin composition for EUV exposure, the resin (A) preferably contains at least one of a fluorine atom and an iodine atom. When the resin (A) contains both a fluorine atom and an iodine atom, the resin (A) may have one repeating unit containing both a fluorine atom and an iodine atom, or the resin (A) may contain two repeating units, one containing a fluorine atom and one containing an iodine atom. The resin (A) may have a repeating unit containing an aromatic group. When the composition of the present invention is used as an actinic ray-sensitive or radiation-sensitive resin composition for EUV exposure, the resin (A) also preferably has a repeating unit containing an aromatic group. Resin (A) may have at least one repeating unit selected from the group consisting of Group B. When the composition of the present invention is used as an actinic ray-sensitive or radiation-sensitive resin composition for ArF, resin (A) preferably has at least one repeating unit selected from the group consisting of Group B. When the composition of the present invention is used as an actinic ray-sensitive or radiation-sensitive resin composition for ArF, resin (A) preferably contains neither a fluorine atom nor a silicon atom. When the composition of the present invention is used as an actinic ray-sensitive or radiation-sensitive resin composition for ArF, resin (A) preferably does not have an aromatic group.

[0071] (Repeating Unit Having an Acid Group) The resin (A) may have a repeating unit having an acid group. The acid group preferably has a pKa of 13 or less. The acid dissociation constant of the acid group is preferably 13 or less, more preferably 3 to 13, and even more preferably 5 to 10. When the resin (A) has an acid group having a pKa of 13 or less, the content of the acid group in the resin (A) is not particularly limited, but is often 0.2 to 6.0 mmol / g. Of these, 0.8 to 6.0 mmol / g is preferred, 1.2 to 5.0 mmol / g is more preferred, and 1.6 to 4.0 mmol / g is even more preferred. When the content of the acid group is within the above range, development proceeds smoothly, and the formed pattern shape is excellent, and resolution is also excellent. Examples of the acid group that may be preferred include a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), a sulfonic acid group, a sulfonamide group, and an isopropanol group. In the hexafluoroisopropanol group, one or more (preferably one to two) fluorine atoms may be substituted with a group other than a fluorine atom (such as an alkoxycarbonyl group). The acid group may be —C(CF ３ )(OH)—CF ２ In addition, one or more fluorine atoms are substituted with a group other than a fluorine atom to form -C(CF ３ )(OH)—CF ２ - may form a ring containing the same. The repeating unit having an acid group is preferably a repeating unit different from the repeating unit having a structure in which a polar group is protected by a group that is cleaved by the action of an acid as described above, and a repeating unit having at least one group selected from the group consisting of a lactone group, a sultone group, and a carbonate group, as described below. The repeating unit having an acid group may have a fluorine atom or an iodine atom. Specific examples of repeating units having an acid group include the repeating units described in paragraphs

[0088] to

[0089] and

[0103] to

[0110] of WO 2022 / 024928. The above descriptions are incorporated herein by reference.

[0072] The repeating unit having an acid group is preferably a repeating unit represented by the following formula (b1-1).

[0073]

[0074] In formula (b1-1), A ａ１ represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, or a cyano group. ２１ represents a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an aralkyl group, an alkoxy group, an alkylcarbonyloxy group, an alkylsulfonyloxy group, an alkyloxycarbonyl group, or an aryloxycarbonyl group, and when there are a plurality of R groups, they may be the same or different. ２１ When R ２１ is preferably a hydrogen atom. a represents an integer of 1 to 3. b represents an integer of 0 to (5-a).

[0075] When the resin (A) contains a repeating unit having an acid group, the content of the repeating unit having an acid group is preferably 10 mol% or more, more preferably 15 mol% or more, based on the total repeating units in the resin (A), and the upper limit thereof is preferably 70 mol% or less, more preferably 65 mol% or less, and even more preferably 60 mol% or less, based on the total repeating units in the resin (A).

[0076] (Repeating units having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom) In addition to the above-mentioned <repeating units having an acid-decomposable group> and <repeating units having an acid group>, the resin (A) may have a repeating unit having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom (hereinafter also referred to as unit X). The <repeating units having neither an acid-decomposable group nor an acid group, and having a fluorine atom, a bromine atom, or an iodine atom> is preferably different from other types of repeating units belonging to Group A, such as the <repeating units having at least one selected from the group consisting of a lactone group, a sultone group, and a carbonate group> and the <repeating units having a photoacid-generating group> described below.

[0077] The unit X is preferably a repeating unit represented by formula (HC).

[0078]

[0079] L ５ represents a single bond or an ester group. ９ represents a hydrogen atom or an alkyl group which may have a fluorine atom or an iodine atom. １０ represents a hydrogen atom, an alkyl group which may have a fluorine atom or an iodine atom, a cycloalkyl group which may have a fluorine atom or an iodine atom, an aryl group which may have a fluorine atom or an iodine atom, or a group combining these. Specific examples of repeating units having a fluorine atom or an iodine atom include the repeating units described in paragraphs

[0116] to

[0117] of WO 2022 / 024928. The above descriptions are incorporated herein by reference.

[0080] The content of units X is 0 mol% or more, 5 mol% or more, or 10 mol% or more, based on all repeating units in resin (A), and the upper limit thereof may be 50 mol% or less, 45 mol% or less, or 40 mol% or less, based on all repeating units in resin (A).

[0081] Among the repeating units of the resin (A), the total content of repeating units containing at least one of a fluorine atom, a bromine atom, and an iodine atom may be 10 mol% or more, 20 mol% or more, 30 mol% or more, or 40 mol% or more, based on all repeating units of the resin (A). The upper limit is not particularly limited, and is 100 mol% or less, based on all repeating units of the resin (A). Examples of repeating units containing at least one of a fluorine atom, a bromine atom, and an iodine atom include repeating units having a fluorine atom, a bromine atom, or an iodine atom and an acid-decomposable group, repeating units having a fluorine atom, a bromine atom, or an iodine atom and an acid group, and repeating units having a fluorine atom, a bromine atom, or an iodine atom.

[0082] (Repeating unit having at least one selected from the group consisting of a lactone group, a sultone group, and a carbonate group) The resin (A) may have a repeating unit (hereinafter also referred to as "unit Y") having at least one selected from the group consisting of a lactone group, a sultone group, and a carbonate group. It is also preferable that unit Y does not have a hydroxyl group or an acid group such as a hexafluoropropanol group.

[0083] The lactone group may have a lactone structure. The lactone structure is preferably a 5- to 7-membered lactone structure. Of these, a 5- to 7-membered lactone structure to which another ring structure is fused is more preferred, forming a bicyclo or spiro structure. The sultone group may have a sultone structure. The 5- to 7-membered sultone structure is preferably a 5- to 7-membered sultone structure. Of these, a 5- to 7-membered sultone structure to which another ring structure is fused is more preferred, forming a bicyclo or spiro structure. Examples of lactone groups include lactone groups formed by removing one or more hydrogen atoms from ring atoms of a lactone structure represented by any of the following formulae (LC1-1) to (LC1-22). Examples of sultone groups include sultone groups formed by removing one or more hydrogen atoms from ring atoms of a sultone structure represented by any of the following formulae (SL1-1) to (SL1-3). Examples of the carbonate group include carbonate groups obtained by removing one or more hydrogen atoms from ring atoms of a cyclic carbonate ester structure represented by any of the following formulae (CC1-1) and (CC1-2). The lactone group, sultone group, and carbonate group may be directly bonded to the main chain of the resin (A). For example, the ring atoms of the lactone group, sultone group, and carbonate group may constitute the main chain of the resin (A). The lactone group, sultone group, and carbonate group may have a substituent.

[0084] R in the following structural formula Ｌ represents a substituent. Ｌ If there are multiple R Ｌ may be the same or different. ＬExamples of R include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 2 to 8 carbon atoms, a carboxyl group, a halogen atom, a cyano group, and an acid-decomposable group. e1 represents an integer of 0 to 4. When multiple e1s are present, the multiple e1s may be the same or different. When e1 is 2 or more, the multiple R Ｌ may be the same or different, and multiple R Ｌ They may be bonded to each other to form a ring.

[0085]

[0086] Examples of the unit Y include a repeating unit represented by the following formula (AI-2).

[0087]

[0088] In formula (AI-2), Rb ０ represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. ０ The alkyl group represented by Rb may have a substituent. ０ Examples of the substituent that the alkyl group represented by Rb may have include a hydroxyl group and a halogen atom. ０ Examples of the halogen atom represented by Rb include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. ０ is preferably a hydrogen atom or a methyl group. Ab represents a single bond, an alkylene group, a divalent linking group having a monocyclic or polycyclic alicyclic hydrocarbon structure, an ether group, an ester group, a carbonyl group, a carboxyl group, or a divalent linking group formed by combining these. Among these, Ab is preferably a single bond or -Ab １ -CO ２ A linking group represented by - is preferred. １is a linear or branched alkylene group, or a monocyclic or polycyclic cycloalkylene group, and is preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group, or a norbornylene group. V is a group obtained by removing one hydrogen atom from a ring member atom of a lactone structure represented by any of formulas (LC1-1) to (LC1-22), a group obtained by removing one hydrogen atom from a ring member atom of a sultone structure represented by any of formulas (SL1-1) to (SL1-3), or a group obtained by removing one hydrogen atom from a ring member atom of a cyclic carbonate structure represented by any of formulas (CC1-1) to (CC1-2).

[0089] When optical isomers exist in the repeating unit having a lactone group or a sultone group, any optical isomer may be used. One optical isomer may be used alone, or multiple optical isomers may be used in combination. When one optical isomer is primarily used, its optical purity (ee) is preferably 90 or more, more preferably 95 or more.

[0090] The carbonate group is preferably a cyclic carbonate ester group. For repeating units having a cyclic carbonate ester group, see, for example, paragraphs

[0127] to

[0133] of WO 2022 / 024928. The above description is incorporated herein by reference.

[0091] When the resin (A) contains the unit Y, the content of the unit Y is preferably 1 mol% or more, more preferably 10 mol% or more, based on all repeating units in the resin (A). The content of the unit Y is preferably 85 mol% or less, more preferably 80 mol% or less, even more preferably 70 mol% or less, and particularly preferably 60 mol% or less, based on all repeating units in the resin (A).

[0092] (Repeating unit having a photoacid generating group) The resin (A) may have, as a repeating unit other than the above, a repeating unit having a group that generates an acid upon irradiation with actinic rays or radiation (also referred to as a "photoacid generating group"). Examples of the repeating unit having a photoacid generating group include a repeating unit represented by formula (4).

[0093]

[0094] R ４１ represents a hydrogen atom or a methyl group. ４１ represents a single bond or a divalent linking group. ４２ represents a divalent linking group. ４０ represents a structural moiety that decomposes upon irradiation with actinic rays or radiation to generate an acid in a side chain. Specific examples of repeating units having a photoacid generating group include the repeating units described in

[0094] to

[0105] of JP 2014-041327 A, the repeating unit described in

[0094] of WO 2018 / 193954 A, and the repeating unit described in

[0138] of WO 2022 / 024928 A. The above descriptions are incorporated herein by reference.

[0095] Examples of the repeating unit represented by formula (4) include the repeating units described in paragraphs

[0094] to

[0105] of JP 2014-041327 A and the repeating unit described in paragraph

[0094] of WO 2018 / 193954 A.

[0096] When the resin (A) contains a repeating unit having a photoacid generating group, the content of the repeating unit having a photoacid generating group is preferably 1 mol% or more, more preferably 5 mol% or more, based on the total repeating units in the resin (A), and the content of the repeating unit having a photoacid generating group is preferably 40 mol% or less, more preferably 35 mol% or less, and even more preferably 30 mol% or less, based on the total repeating units in the resin (A).

[0097] (Repeating unit represented by formula (V-1) or the following formula (V-2)) The resin (A) may have a repeating unit represented by the following formula (V-1) or the following formula (V-2). It is preferable that the repeating unit represented by the following formula (V-1) and the repeating unit represented by the following formula (V-2) are different from the above-mentioned repeating units.

[0098]

[0099] In the formula, R ６ and R ７each independently represents a hydrogen atom, a hydroxyl group, an alkyl group, an alkoxy group, an acyloxy group, a cyano group, a nitro group, an amino group, a halogen atom, an ester group (-OCOR or -COOR: R is an alkyl group or a fluorinated alkyl group having 1 to 6 carbon atoms), or a carboxyl group. As the alkyl group, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms is preferred. ３ represents an integer of 0 to 6. ４ represents an integer of 0 to 4. ４ is a methylene group, an oxygen atom, or a sulfur atom. Examples of repeating units represented by formula (V-1) or (V-2) are shown below. Examples of repeating units represented by formula (V-1) or (V-2) include the repeating units described in paragraph

[0100] of WO 2018 / 193954.

[0100] (Repeating Unit for Reducing Mobility of Main Chain) Resin (A) preferably has a high glass transition temperature (Tg) in order to suppress excessive diffusion of generated acid or pattern collapse during development. Tg is preferably higher than 90°C, more preferably higher than 100°C, even more preferably higher than 110°C, and particularly preferably higher than 125°C. In order to achieve an excellent dissolution rate in a developer, Tg is preferably 400°C or lower, more preferably 350°C or lower. In this specification, the glass transition temperature (Tg) of a polymer such as resin (A) (hereinafter referred to as "Tg of repeating unit") is calculated by the following method. First, the Tg of a homopolymer consisting of only each repeating unit contained in the polymer is calculated using the Bicerano method. Next, the mass proportion (%) of each repeating unit relative to all repeating units in the polymer is calculated. Next, the Tg at each mass ratio is calculated using the Fox formula (described in Materials Letters 62 (2008) 3152, etc.), and the sum of these values ​​is used to determine the Tg (°C) of the polymer. The Bicerano method is described in "Prediction of Polymer Properties," Marcel Dekker Inc., New York (1993). Calculation of Tg by the Bicerano method can be performed using polymer property estimation software MDL Polymer (MDL Information Systems, Inc.).

[0101] In order to increase the Tg of resin (A) (preferably to make the Tg greater than 90°C), it is preferable to reduce the mobility of the main chain of resin (A). Methods for reducing the mobility of the main chain of resin (A) include the following methods (a) to (e): (a) Introduction of a bulky substituent into the main chain; (b) Introduction of multiple substituents into the main chain; (c) Introduction of a substituent that induces interactions between resins (A) near the main chain; (d) Formation of a main chain with a cyclic structure; (e) Linking of a cyclic structure to the main chain. Resin (A) may have a repeating unit that exhibits a homopolymer Tg of 130°C or higher. The type of repeating unit that exhibits a homopolymer Tg of 130°C or higher is not particularly limited, and may be any repeating unit that exhibits a homopolymer Tg of 130°C or higher as calculated by the Bicerano method. Depending on the type of functional group in the repeating units represented by formulas (A) to (E) described below, it may also be a repeating unit that exhibits a homopolymer Tg of 130°C or higher.

[0102] One example of a specific means for achieving the above (a) is to introduce a repeating unit represented by formula (A) into resin (A).

[0103]

[0104] Formula (A), R Ａ represents a group containing a polycyclic structure. ｘ represents a hydrogen atom, a methyl group, or an ethyl group. A group containing a polycyclic structure is a group containing multiple ring structures, and the multiple ring structures may be condensed or not condensed. Specific examples of the repeating unit represented by formula (A) include those described in paragraphs

[0107] to

[0119] of WO 2018 / 193954.

[0105] One example of a specific means for achieving the above (b) is to introduce a repeating unit represented by formula (B) into resin (A).

[0106]

[0107] In formula (B), R ｂ１ ~R ｂ４ each independently represents a hydrogen atom or an organic group; R ｂ１ ~R ｂ４At least two of the above represent organic groups. When at least one of the organic groups is a group in which a ring structure is directly linked to the main chain in the repeating unit, the type of the other organic groups is not particularly limited. Furthermore, when none of the organic groups is a group in which a ring structure is directly linked to the main chain in the repeating unit, at least two of the organic groups are substituents having three or more constituent atoms excluding hydrogen atoms. Specific examples of the repeating unit represented by formula (B) include those described in paragraphs

[0113] to

[0115] of WO 2018 / 193954.

[0108] One example of a specific means for achieving the above (c) is to introduce a repeating unit represented by formula (C) into resin (A).

[0109]

[0110] In formula (C), R ｃ１ ~R ｃ４ each independently represents a hydrogen atom or an organic group; R ｃ１ ~R ｃ４ At least one of the repeating units represented by formula (C) is a group containing a hydrogen-bonding hydrogen atom within three atoms from the main chain carbon. In particular, in order to induce interactions between the main chains of resin (A), it is preferable to have a hydrogen-bonding hydrogen atom within two atoms (closer to the main chain). Specific examples of the repeating unit represented by formula (C) include those described in paragraphs

[0119] to

[0121] of WO 2018 / 193954.

[0111] One example of a specific means for achieving the above (d) is to introduce a repeating unit represented by formula (D) into resin (A).

[0112]

[0113] In formula (D), "Cyclic" represents a group that forms a main chain with a cyclic structure. The number of constituent atoms of the ring is not particularly limited. Specific examples of the repeating unit represented by formula (D) include those described in paragraphs

[0126] to

[0127] of WO 2018 / 193954.

[0114] One example of a specific means for achieving the above (e) is to introduce a repeating unit represented by formula (E) into resin (A).

[0115]

[0116] In formula (E), Re each independently represents a hydrogen atom or an organic group. Examples of the organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group, each of which may have a substituent. "Cyclic" refers to a cyclic group containing carbon atoms in the main chain. The number of atoms contained in the cyclic group is not particularly limited. Specific examples of the repeating unit represented by formula (E) include those described in paragraphs

[0131] to

[0133] of WO 2018 / 193954.

[0117] (Repeating unit having at least one group selected from a lactone group, a sultone group, a carbonate group, a hydroxyl group, a cyano group, and an alkali-soluble group) The resin (A) may have a repeating unit having at least one group selected from a lactone group, a sultone group, a carbonate group, a hydroxyl group, a cyano group, and an alkali-soluble group. Examples of the repeating unit having a lactone group, a sultone group, or a carbonate group contained in the resin (A) include the repeating units described above in <Repeating unit having at least one group selected from the group consisting of a lactone group, a sultone group, and a carbonate group>. The preferred content is also as described above in <Repeating unit having at least one group selected from the group consisting of a lactone group, a sultone group, and a carbonate group>.

[0118] The resin (A) may have a repeating unit having a hydroxyl group or a cyano group. This improves substrate adhesion and developer affinity. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group. The repeating unit having a hydroxyl group or a cyano group preferably does not have an acid-decomposable group. Examples of repeating units having a hydroxyl group or a cyano group include those described in paragraphs

[0081] to

[0084] of JP 2014-098921 A.

[0119] The resin (A) may have a repeating unit having an alkali-soluble group. Examples of the alkali-soluble group include a carboxyl group, a sulfonamide group, a sulfonylimide group, a bissulfonylimide group, and an aliphatic alcohol group (e.g., a hexafluoroisopropanol group) substituted at the α-position with an electron-withdrawing group, with a carboxyl group being preferred. When the resin (A) contains a repeating unit having an alkali-soluble group, the resolution in contact hole applications is improved. Examples of repeating units having an alkali-soluble group include those described in paragraphs

[0085] and

[0086] of JP 2014-098921 A.

[0120] (Repeating unit having an alicyclic hydrocarbon structure and not exhibiting acid decomposability) Resin (A) may have a repeating unit having an alicyclic hydrocarbon structure and not exhibiting acid decomposability. This can reduce elution of low-molecular-weight components from the resist film into the immersion liquid during immersion exposure. Examples of repeating units having an alicyclic hydrocarbon structure and not exhibiting acid decomposability include repeating units derived from 1-adamantyl(meth)acrylate, diamantyl(meth)acrylate, tricyclodecanyl(meth)acrylate, or cyclohexyl(meth)acrylate.

[0121] (Repeating Unit Represented by Formula (III) Having Neither a Hydroxyl Group nor a Cyano Group) The resin (A) may have a repeating unit represented by formula (III) having neither a hydroxyl group nor a cyano group.

[0122]

[0123] In formula (III), R ５ represents a hydrocarbon group having at least one cyclic structure and having neither a hydroxyl group nor a cyano group. Ra represents a hydrogen atom, an alkyl group, or a —CH ２ -O-Ra ２ represents a group. ２ represents a hydrogen atom, an alkyl group, or an acyl group. Examples of the repeating unit represented by formula (III) that does not have either a hydroxyl group or a cyano group include those described in paragraphs

[0087] to

[0094] of JP 2014-098921 A.

[0124] (Other Repeating Units) Furthermore, the resin (A) may have a repeating unit other than the repeating units described above. For example, the resin (A) may have a repeating unit selected from the group consisting of a repeating unit having an oxathiane ring group, a repeating unit having an oxazolone ring group, a repeating unit having a dioxane ring group, and a repeating unit having a hydantoin ring group.

[0125] In addition to the repeating structural units described above, the resin (A) may have various repeating structural units for the purpose of adjusting dry etching resistance, suitability for a standard developer, substrate adhesion, resist profile, resolution, heat resistance, sensitivity, and the like.

[0126] As the resin (A), particularly when the composition of the present invention is used as an actinic ray-sensitive or radiation-sensitive resin composition for ArF, it is preferable that all of the repeating units are composed of repeating units derived from a compound having an ethylenically unsaturated bond. In particular, it is also preferable that all of the repeating units are composed of (meth)acrylate repeating units. When all of the repeating units are composed of (meth)acrylate repeating units, any of those in which all of the repeating units are methacrylate repeating units, all of the repeating units are acrylate repeating units, or all of the repeating units are a combination of methacrylate repeating units and acrylate repeating units can be used, and it is preferable that the acrylate repeating units account for 50 mol% or less of the total repeating units.

[0127] Resin (A) can be synthesized according to a conventional method (e.g., radical polymerization). The weight average molecular weight (Mw) of resin (A), as measured by GPC in terms of polystyrene, is preferably 30,000 or less, more preferably 1,000 to 30,000, even more preferably 3,000 to 30,000, and particularly preferably 5,000 to 15,000. The dispersity (molecular weight distribution, Mw / Mn) of resin (A) is preferably 1 to 5, more preferably 1 to 3, even more preferably 1.2 to 3.0, and particularly preferably 1.2 to 2.0. The smaller the dispersity, the better the resolution and resist shape, and furthermore, the smoother the sidewalls of the resist pattern and the better the roughness.

[0128] The content of resin (A) in the composition of the present invention is preferably 30.0 to 99.9 mass%, more preferably 40.0 to 99.9 mass%, and even more preferably 60.0 to 99.0 mass%, based on the total solid content of the composition of the present invention. Resin (A) may be used alone or in combination of two or more. When two or more types are used, the total content thereof is preferably within the above-mentioned preferred content range.

[0129] [Onium Salt (B)] The onium salt (B) contained in the composition of the present invention will be explained below. The onium salt (B) is represented by the following formula (1).

[0130]

[0131] In formula (1), Ra represents a hydrogen atom or a hydrocarbon group which may have a heteroatom, Rb represents a hydrogen atom or a substituent, Z ＋ represents an organic cation. Ra and Rb may be bonded to form a ring. However, when Ra represents a hydrocarbon group which may have a heteroatom, Ra is bonded to a carbonyl group via a carbon atom. Furthermore, when Rb does not contain a cyclic structure, Ra does not represent an unsubstituted methyl group or an unsubstituted ethyl group. Z ＋ The organic cation represented by may have a valence of one, two or more.

[0132] Z in formula (1) ＋ represents an organic cation. ＋The valence of the organic cation represented by Z may be monovalent or divalent or higher. ＋ Preferably, Z represents a sulfonium cation or an iodonium cation. ＋ represents a cation represented by the following formula (ZaI) (hereinafter also referred to as "cation (ZaI)") or a cation represented by the following formula (ZaII) (hereinafter also referred to as "cation (ZaII)").

[0133]

[0134] In the above formula (ZaI), R ２０１ , R ２０２ and R ２０３ R each independently represents an organic group. ２０１ , R ２０２ and R ２０３ The number of carbon atoms in the organic group represented by R is preferably 1 to 30, and more preferably 1 to 20. ２０１ ~R ２０３ Two of these may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester group, an amide group, or a carbonyl group. ２０１ ~R ２０３ Examples of groups formed by combining two of these include alkylene groups (e.g., butylene and pentylene groups) and -CH ２ -CH ２ -O-CH ２ -CH ２ - are some examples.

[0135] Suitable embodiments of the organic cation in formula (ZaI) include cation (ZaI-1), cation (ZaI-2), cation (ZaI-3b), and cation (ZaI-4b) described below.

[0136] First, the cation (ZaI-1) will be described. The cation (ZaI-1) is R in the above formula (ZaI). ２０１ ~R ２０３ is an arylsulfonium cation, in which at least one of R is an aryl group. ２０１ ~R ２０３ may all be aryl groups, or R ２０１ ~R２０３ A part of R may be an aryl group, and the rest may be an alkyl group or a cycloalkyl group. ２０１ ~R ２０３ is an aryl group, and R ２０１ ~R ２０３ The remaining two of R may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester group, an amide group, or a carbonyl group. ２０１ ~R ２０３ Examples of groups formed by combining two of the above include alkylene groups in which one or more methylene groups may be substituted with an oxygen atom, a sulfur atom, an ester group, an amide group, and / or a carbonyl group (e.g., butylene group, pentylene group, and —CH ２ -CH ２ -O-CH ２ -CH ２ The arylsulfonium cations include triarylsulfonium cations, diarylalkylsulfonium cations, aryldialkylsulfonium cations, diarylcycloalkylsulfonium cations, and aryldicycloalkylsulfonium cations.

[0137] The aryl group contained in the arylsulfonium cation is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure containing an oxygen atom, a nitrogen atom, or a sulfur atom. Examples of heterocyclic structures include pyrrole residues, furan residues, thiophene residues, indole residues, benzofuran residues, and benzothiophene residues. When the arylsulfonium cation has two or more aryl groups, the two or more aryl groups may be the same or different. The alkyl group or cycloalkyl group optionally contained in the arylsulfonium cation is preferably a linear alkyl group having 1 to 15 carbon atoms, a branched alkyl group having 3 to 15 carbon atoms, or a cycloalkyl group having 3 to 15 carbon atoms, and more preferably a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a t-butyl group, a cyclopropyl group, a cyclobutyl group, or a cyclohexyl group.

[0138] R ２０１ ~R ２０３ Preferred substituents that the aryl group, alkyl group, and cycloalkyl group may have include alkyl groups (e.g., having 1 to 15 carbon atoms), cycloalkyl groups (e.g., having 3 to 15 carbon atoms), aryl groups (e.g., having 6 to 14 carbon atoms), alkoxy groups (e.g., having 1 to 15 carbon atoms), cycloalkylalkoxy groups (e.g., having 1 to 15 carbon atoms), halogen atoms (preferably chlorine atoms, bromine atoms, iodine atoms), hydroxyl groups, carboxyl groups, ester groups, sulfinyl groups, sulfonyl groups, alkylthio groups, and phenylthio groups. The above substituents may further have substituents, if possible. It is also preferred that the above substituents form an acid-decomposable group in any combination.

[0139] Next, the cation (ZaI-2) will be described. The cation (ZaI-2) is a cation represented by the formula (ZaI) R ２０１ ~R ２０３ are each independently a cation representing an organic group that does not have an aromatic ring. The aromatic ring also includes an aromatic ring containing a heteroatom. ２０１ ~R ２０３ The number of carbon atoms of the organic group not having an aromatic ring as R is preferably 1 to 30, and more preferably 1 to 20. ２０１ ~R ２０３ are each independently preferably an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group, more preferably a linear or branched 2-oxoalkyl group, a 2-oxocycloalkyl group, or an alkoxycarbonylmethyl group, and still more preferably a linear or branched 2-oxoalkyl group.

[0140] R ２０１ ~R ２０３ Examples of the alkyl group and cycloalkyl group in R include linear alkyl groups having 1 to 10 carbon atoms or branched alkyl groups having 3 to 10 carbon atoms (e.g., methyl, ethyl, propyl, butyl, and pentyl groups), and cycloalkyl groups having 3 to 10 carbon atoms (e.g., cyclopentyl, cyclohexyl, and norbornyl groups). ２０１ ~R ２０３may be further substituted with a halogen atom, an alkoxy group (e.g., having 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group. ２０１ ~R ２０３ It is also preferred that the substituents independently form an acid-decomposable group by any combination of the substituents.

[0141] Next, the cation (ZaI-3b) will be described. The cation (ZaI-3b) is a cation represented by the following formula (ZaI-3b).

[0142]

[0143] In formula (ZaI-3b), R １ｃ ~R ５ｃ R each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an alkylcarbonyloxy group, a cycloalkylcarbonyloxy group, a halogen atom, a hydroxyl group, a nitro group, an alkylthio group, or an arylthio group. ６ｃ and R ７ｃ R each independently represents a hydrogen atom, an alkyl group (for example, a t-butyl group), a cycloalkyl group, a halogen atom, a cyano group, or an aryl group. ｘ and R ｙ R each independently represents an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group. １ｃ ~R ７ｃ , and R ｘ and R ｙ It is also preferred that the substituents independently form an acid-decomposable group by any combination of the substituents.

[0144] R １ｃ ~R ５ｃ Two or more of the following, R ５ｃ and R ６ｃ , R ６ｃ and R ７ｃ , R ５ｃ and R ｘ , and R ｘ and R ｙmay be bonded to each other to form a ring, and each of these rings may independently contain an oxygen atom, a sulfur atom, a ketone group, an ester bond, or an amide bond. Examples of the ring include aromatic or non-aromatic hydrocarbon rings, aromatic or non-aromatic heterocycles, and polycyclic fused rings formed by combining two or more of these rings. Examples of the ring include 3- to 10-membered rings, preferably 4- to 8-membered rings, and more preferably 5- or 6-membered rings.

[0145] R １ｃ ~R ５ｃ Two or more of the following, R ６ｃ and R ７ｃ , and R ｘ and R ｙ Examples of the group formed by bonding of R include alkylene groups such as butylene and pentylene. A methylene group in this alkylene group may be substituted with a heteroatom such as an oxygen atom. ５ｃ and R ６ｃ , and R ５ｃ and R ｘ The group formed by bonding is preferably a single bond or an alkylene group. Examples of the alkylene group include a methylene group and an ethylene group.

[0146] R １ｃ ~R ５ｃ , R ６ｃ , R ７ｃ , R ｘ , R ｙ , and R １ｃ ~R ５ｃ Two or more of the following, R ５ｃ and R ６ｃ , R ６ｃ and R ７ｃ , R ５ｃ and R ｘ , and R ｘ and R ｙ The ring formed by bonding together may have a substituent.

[0147] Next, the cation (ZaI-4b) will be described. The cation (ZaI-4b) is a cation represented by the following formula (ZaI-4b).

[0148]

[0149] In formula (ZaI-4b), l represents an integer of 0 to 2, and r represents an integer of 0 to 8. １３ represents a hydrogen atom, a halogen atom (preferably a chlorine atom, a bromine atom, or an iodine atom), a hydroxyl group, an alkyl group, a halogenated alkyl group, an alkoxy group, a carboxyl group, an alkoxycarbonyl group, or a group containing a cycloalkyl group (which may be a cycloalkyl group itself or a group containing a cycloalkyl group as a part). These groups may have a substituent. R １４ represents a hydroxyl group, a halogen atom (preferably a chlorine atom, a bromine atom, or an iodine atom), an alkyl group, a halogenated alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group, or a group containing a cycloalkyl group (which may be a cycloalkyl group itself or a group containing a cycloalkyl group as a part). These groups may have a substituent. R １４ When a plurality of R are present, each independently represents the above group such as a hydroxyl group. １５ each independently represents an alkyl group, a cycloalkyl group, or a naphthyl group. １５ may be bonded to each other to form a ring. １５ When two R are bonded to each other to form a ring, the ring skeleton may contain a heteroatom such as an oxygen atom or a nitrogen atom. １５ are preferably alkylene groups and bonded to each other to form a ring structure. １５ The ring formed by bonding together may have a substituent.

[0150] In formula (ZaI-4b), R １３ , R １４ , and R １５ The alkyl group in R may be linear or branched. The number of carbon atoms in the alkyl group is preferably 1 to 10. The alkyl group is preferably a methyl group, an ethyl group, an n-butyl group, a t-butyl group, or the like. １３ ~R １５ , and R ｘ and R ｙIt is also preferred that each of the substituents independently form an acid-decomposable group by any combination of the substituents.

[0151] Next, formula (ZaII) will be described. In formula (ZaII), R ２０４ and R ２０５ R each independently represents an aryl group, an alkyl group, or a cycloalkyl group. ２０４ and R ２０５ The aryl group in R is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. ２０４ and R ２０５ The aryl group in R may be an aryl group having a heterocycle containing an oxygen atom, a nitrogen atom, a sulfur atom, or the like. Examples of the skeleton of the aryl group having a heterocycle include pyrrole, furan, thiophene, indole, benzofuran, and benzothiophene. ２０４ and R ２０５ The alkyl group and cycloalkyl group are preferably a linear alkyl group having 1 to 10 carbon atoms or a branched alkyl group having 3 to 10 carbon atoms (e.g., methyl, ethyl, propyl, butyl, or pentyl), or a cycloalkyl group having 3 to 10 carbon atoms (e.g., cyclopentyl, cyclohexyl, or norbornyl).

[0152] R ２０４ and R ２０５ The aryl group, alkyl group, and cycloalkyl group in R may each independently have a substituent. ２０４ and R ２０５ Examples of the substituents that the aryl group, alkyl group, and cycloalkyl group may have include alkyl groups (e.g., having 1 to 15 carbon atoms), cycloalkyl groups (e.g., having 3 to 15 carbon atoms), aryl groups (e.g., having 6 to 15 carbon atoms), alkoxy groups (e.g., having 1 to 15 carbon atoms), halogen atoms, hydroxyl groups, and phenylthio groups. ２０４ and R ２０５ It is also preferred that the substituents independently form an acid-decomposable group by any combination of the substituents.

[0153] Below is Z ＋Specific examples are shown below, but the present invention is not limited to these.

[0154]

[0155]

[0156] In formula (1), Ra represents a hydrogen atom or a hydrocarbon group which may have a heteroatom. However, when Ra represents a hydrocarbon group which may have a heteroatom, Ra is bonded to a carbonyl group (the carbonyl group specified in formula (1)) via a carbon atom. The hydrocarbon group represented by Ra may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. The heteroatom which the hydrocarbon group represented by Ra may have is not particularly limited, but examples thereof include an oxygen atom, a sulfur atom, a nitrogen atom, a halogen atom, a boron atom, a phosphorus atom, and a silicon atom, and at least one selected from the group consisting of an oxygen atom, a sulfur atom, a nitrogen atom, and a halogen atom is preferred. The hydrocarbon group represented by Ra is preferably an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a cycloalkynyl group, or an aryl group.

[0157] The alkyl group represented by Ra may be linear or branched, and is preferably an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms. Examples of the alkyl group represented by Ra include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a hexyl group, a 2-ethylhexyl group, an octyl group, and a dodecyl group. The alkyl group represented by Ra may have a substituent. However, when Rb in formula (1) does not contain a cyclic structure, Ra does not represent an unsubstituted methyl group or an unsubstituted ethyl group.

[0158] The cycloalkyl group represented by Ra may be monocyclic or polycyclic, and is preferably a cycloalkyl group having 3 to 20 carbon atoms, more preferably a cycloalkyl group having 4 to 15 carbon atoms, and even more preferably a cycloalkyl group having 5 to 10 carbon atoms. Examples of the cycloalkyl group represented by Ra include a cyclopentyl group, a 1-methylcyclopentyl group, a cyclohexyl group, an adamantyl group, a 1-ethyladamantyl group, a norbornyl group, a tetracyclodecanyl group, and a tetracyclododecanyl group. The cycloalkyl group represented by Ra may have a substituent. In some cases, one or more of the methylene groups constituting the cycloalkane ring of the cycloalkyl group represented by Ra is substituted with a heteroatom such as an oxygen atom or a sulfur atom, or a -NR Ｎ３ -, -C(=O)-, -COO-, -S(=O)-, -SO ２ -, -SO ３ R may be replaced by a group having a hetero atom such as - or a vinylidene group. Ｎ３ represents a hydrogen atom or a substituent. In the cycloalkyl group represented by Ra, one or more ethylene groups constituting the cycloalkane ring may be substituted with a vinylene group.

[0159] The alkenyl group represented by Ra may be linear or branched, and is preferably an alkenyl group having 2 to 12 carbon atoms, more preferably an alkenyl group having 2 to 6 carbon atoms. The alkenyl group represented by Ra may have a substituent.

[0160] The cycloalkenyl group represented by Ra may be monocyclic or polycyclic, and is preferably a cycloalkenyl group having 3 to 20 carbon atoms, more preferably a cycloalkenyl group having 4 to 15 carbon atoms, and even more preferably a cycloalkenyl group having 5 to 10 carbon atoms. The cycloalkenyl group represented by Ra may have a substituent. One or more of the methylene groups constituting the cycloalkene ring of the cycloalkenyl group represented by Ra may be substituted with a heteroatom such as an oxygen atom or a sulfur atom, or with a -NR Ｎ３ -, -C(=O)-, -COO-, -S(=O)-, -SO ２ -, -SO ３ R may be replaced by a group having a hetero atom such as - or a vinylidene group. Ｎ３ represents a hydrogen atom or a substituent.

[0161] The alkynyl group represented by Ra may be linear or branched, and is preferably an alkynyl group having 2 to 12 carbon atoms, more preferably an alkynyl group having 2 to 6 carbon atoms. The alkynyl group represented by Ra may have a substituent.

[0162] The cycloalkynyl group represented by Ra may be monocyclic or polycyclic, and is preferably a cycloalkynyl group having 3 to 20 carbon atoms, more preferably a cycloalkynyl group having 4 to 15 carbon atoms, and even more preferably a cycloalkynyl group having 5 to 10 carbon atoms. The cycloalkynyl group represented by Ra may have a substituent. One or more of the methylene groups constituting the cycloalkyne ring of the cycloalkynyl group represented by Ra may be substituted with a heteroatom such as an oxygen atom or a sulfur atom, or with a -NR Ｎ３ -, -C(=O)-, -COO-, -S(=O)-, -SO ２ -, -SO ３ R may be replaced by a group having a hetero atom such as - or a vinylidene group. Ｎ３ represents a hydrogen atom or a substituent.

[0163] The aryl group represented by Ra is preferably an aryl group having 6 to 20 carbon atoms, more preferably an aryl group having 6 to 15 carbon atoms, still more preferably an aryl group having 6 to 10 carbon atoms, particularly preferably a phenyl group or a naphthyl group, and most preferably a phenyl group. The aryl group represented by Ra may have a substituent.

[0164] It is also preferable that Ra represents a hydrocarbon group represented by the following formula (3).

[0165]

[0166] In formula (3), Y ３１ represents an alkylene group, a cycloalkylene group, an alkenylene group, an arylene group, or a group formed by combining two or more of these groups; Y ３２ is —C(═O)—, —S(═O)—, —NR—, or —SO ２ represents -, and Y ３３ represents an oxygen atom, a sulfur atom, or a single bond, R ３１represents an amino group, an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a cycloalkynyl group, an aryl group, or a heteroaryl group, R represents a hydrogen atom or a substituent, and p represents 0 or 1. * represents the bonding position to the carbonyl group.

[0167] Y in formula (3) ３１ represents an alkylene group, a cycloalkylene group, an alkenylene group, an arylene group, or a group formed by combining two or more of these groups.

[0168] Y ３１ The alkylene group represented by is not particularly limited, but is preferably an alkylene group having 1 to 8 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group, or an octylene group. ３１ The alkylene group represented by may have a substituent.

[0169] Y ３１ The number of carbon atoms in the cycloalkylene group represented by is not particularly limited, but is preferably 3 to 20, and more preferably 4 to 15. The cycloalkylene group may be a monocyclic cycloalkylene group such as a cyclopentylene group or a cyclohexylene group, or a polycyclic cycloalkylene group such as a norbornylene group, a tetracyclodecanylene group, a tetracyclododecanylene group, or an adamantylene group. One or more of the methylene groups constituting the cycloalkane ring of the cycloalkylene group may be a heteroatom such as an oxygen atom or a sulfur atom, or a -NR Ｎ３ -, -C(=O)-, -COO-, -S(=O)-, -SO ２ -, -SO ３ R may be replaced by a group having a hetero atom such as - or a vinylidene group. Ｎ３ represents a hydrogen atom or a substituent. In addition, in the cycloalkylene group, one or more ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group. ３１ The cycloalkylene group represented by may have a substituent.

[0170] Y ３１ The alkenylene group represented by is not particularly limited, but is preferably, for example, an alkenylene group having 2 to 8 carbon atoms. ３１The alkenylene group represented by may have a substituent.

[0171] Y ３１ The arylene group represented by is not particularly limited, but examples thereof include arylene groups having 6 to 20 carbon atoms, and preferably arylene groups having 6 to 15 carbon atoms. The arylene group is preferably a phenylene group or a naphthylene group, and particularly preferably a phenylene group. ３１ The arylene group represented by may have a substituent.

[0172] Y in formula (3) ３２ is —C(═O)—, —S(═O)—, —NR—, or —SO ２ represents —, —C(═O)— or —SO ２ Preferably, Y represents -. ３２ The substituent represented by R in -NR- is not particularly limited, but is preferably an organic group, more preferably an alkyl group. The description, specific examples and preferred range of the organic group represented by R will be described later in the section R in formula (X). Ｘ１ The alkyl group represented by R may be linear or branched, and is preferably an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms. The alkyl group represented by R may have a substituent.

[0173] Y in formula (3) ３３ represents an oxygen atom (—O—), a sulfur atom (—S—) or a single bond, and preferably represents an oxygen atom or a single bond.

[0174] In formula (3), p represents 0 or 1, and preferably represents 1.

[0175] R in formula (3) ３１ represents an amino group, an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a cycloalkynyl group, an aryl group, or a heteroaryl group, preferably represents an alkyl group, a cycloalkyl group, an aryl group, or a heteroaryl group, and more preferably represents an alkyl group, a cycloalkyl group, or an aryl group.

[0176] R ３１The alkyl group represented by R may be linear or branched, and is preferably an alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and even more preferably an alkyl group having 1 to 3 carbon atoms. ３１ Examples of the alkyl group represented by R include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a t-butyl group. ３１ The alkyl group represented by the formula (I) may have a substituent.

[0177] R ３１ The cycloalkyl group represented by R may be monocyclic or polycyclic, and is preferably a cycloalkyl group having 3 to 20 carbon atoms, more preferably a cycloalkyl group having 4 to 15 carbon atoms, and even more preferably a cycloalkyl group having 5 to 10 carbon atoms. ３１ Examples of the cycloalkyl group represented by R include a cyclopentyl group, a 1-methylcyclopentyl group, a cyclohexyl group, an adamantyl group, a 1-ethyladamantyl group, a norbornyl group, a tetracyclodecanyl group, and a tetracyclododecanyl group. ３１ The cycloalkyl group represented by the formula (I) may have a substituent. ３１ one or more methylene groups constituting the cycloalkane ring of the cycloalkyl group represented by the formula: Ｎ３ -, -C(=O)-, -COO-, -S(=O)-, -SO ２ -, -SO ３ R may be replaced by a group having a hetero atom such as - or a vinylidene group. Ｎ３ represents a hydrogen atom or a substituent. ３１ In the cycloalkyl group represented by the formula (I), one or more ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group.

[0178] R ３１ The alkenyl group represented by R may be linear or branched, and is preferably an alkenyl group having 2 to 12 carbon atoms, more preferably an alkenyl group having 2 to 6 carbon atoms. ３１ The alkenyl group represented by the following formula may have a substituent.

[0179] R ３１The cycloalkenyl group represented by the formula (I) may be monocyclic or polycyclic, and is preferably a cycloalkenyl group having 3 to 20 carbon atoms, more preferably a cycloalkenyl group having 4 to 15 carbon atoms, and even more preferably a cycloalkenyl group having 5 to 10 carbon atoms. ３１ The cycloalkenyl group represented by R may have a substituent. ３１ one or more methylene groups constituting the cycloalkene ring of the cycloalkenyl group represented by the formula: Ｎ３ -, -C(=O)-, -COO-, -S(=O)-, -SO ２ -, -SO ３ R may be replaced by a group having a hetero atom such as - or a vinylidene group. Ｎ３ represents a hydrogen atom or a substituent.

[0180] R ３１ The alkynyl group represented by R may be linear or branched, and is preferably an alkynyl group having 2 to 12 carbon atoms, more preferably an alkynyl group having 2 to 6 carbon atoms. ３１ The alkynyl group represented by the following formula may have a substituent.

[0181] R ３１ The cycloalkynyl group represented by the formula (I) may be monocyclic or polycyclic, and is preferably a cycloalkynyl group having 3 to 20 carbon atoms, more preferably a cycloalkynyl group having 4 to 15 carbon atoms, and even more preferably a cycloalkynyl group having 5 to 10 carbon atoms. ３１ The cycloalkynyl group represented by the formula (I) may have a substituent. ３１ one or more methylene groups constituting the cycloalkyne ring of the cycloalkynyl group represented by the formula: Ｎ３ -, -C(=O)-, -COO-, -S(=O)-, -SO ２ -, -SO ３ R may be replaced by a group having a hetero atom such as - or a vinylidene group. Ｎ３ represents a hydrogen atom or a substituent.

[0182] R ３１The aryl group represented by R is preferably an aryl group having 6 to 20 carbon atoms, more preferably an aryl group having 6 to 15 carbon atoms, even more preferably an aryl group having 6 to 10 carbon atoms, particularly preferably a phenyl group or a naphthyl group, and most preferably a phenyl group. ３１ The aryl group represented by the following formula may have a substituent.

[0183] R ３１ The heteroaryl group represented by may be either a monocyclic or polycyclic (for example, 2 to 6 rings). ３１ The number of heteroatoms contained as ring members in the heteroaryl group represented by the formula (I) is not particularly limited, but may be, for example, 1 to 10, or 1 to 5. Examples of heteroatoms include a nitrogen atom, a sulfur atom, and an oxygen atom. ３１ The number of ring atoms in the heteroaryl group represented by R is not particularly limited, but may be, for example, 5 to 15. ３１ The number of carbon atoms in the heteroaryl group represented by is not particularly limited, but may be, for example, 2 to 14. ３１ The heteroaryl group represented by the following formula may have a substituent.

[0184] R ３１ The amino group represented by the formula (R) may have a substituent. ３１ The amino group represented by -NA １ A ２ It is preferable that the formula is represented by the formula: １ and A ２ A each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, or an aryl group. １ and A ２ The explanations, specific examples and preferred ranges of the alkyl group, cycloalkyl group and aryl group represented by the formula (I) are as described above for R ３１ The same applies to the alkyl group, cycloalkyl group, and aryl group represented by the formula: A １ and A ２ may be bonded to form a ring.

[0185] In formula (1), Rb represents a hydrogen atom or a substituent. The substituent represented by Rb is not particularly limited, and examples thereof include the above-mentioned substituent T. Rb preferably represents a substituent represented by the following formula (X):

[0186]

[0187] In formula (X), R Ｘ１ represents an organic group, L Ｘ１ represents a single bond or a divalent linking group. * represents the bonding position.

[0188] R in formula (X) Ｘ１ represents an organic group, and preferably represents an aliphatic hydrocarbon group which may have a heteroatom. Ｘ１ The number of carbon atoms in the organic group represented by is not particularly limited, but is preferably 1 to 30, and more preferably 1 to 20. Ｘ１ The organic group represented by R preferably has 5 or more carbon atoms. Ｘ１ The organic group represented by is not particularly limited, and examples thereof include a cyano group, an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a cycloalkynyl group, an aryl group, a group represented by formula (y-1), a group represented by formula (y-2), -NA ３ A ４ and groups formed by combining two or more of these. ３ represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an acyl group, or an alkoxycarbonyl group; A ４ represents an alkyl group, a cycloalkyl group, an aryl group, an acyl group, or an alkoxycarbonyl group. ３ and A ４ may be bonded to form a ring.

[0189]

[0190] In formula (y-1), Y １ and Y ３ each independently represents —O— or —NR—, and R represents a hydrogen atom or a substituent. ２ is -C(=O)-, -S(=O)- or -SO ２ - represents. ４R and R represent an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a cycloalkynyl group, or an aryl group. ４ and may be bonded to form a ring. q, t, and r each independently represent 0 or 1, provided that at least one of q, t, and r represents 1. * represents the bonding position.

[0191]

[0192] In formula (y-2), s represents an integer of 1 or more. Ｙ represents a cyano group, a nitro group, or a group represented by formula (y-1). * represents a bonding position.

[0193] R Ｘ１ The alkyl group represented by R may be linear or branched, and is preferably an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms. Ｘ１ Examples of the alkyl group represented by R include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a hexyl group, a 2-ethylhexyl group, an octyl group, and a dodecyl group. Ｘ１ The alkyl group represented by the formula (I) may have a substituent.

[0194] R Ｘ１ The cycloalkyl group represented by R may be monocyclic or polycyclic, and is preferably a cycloalkyl group having 3 to 20 carbon atoms, more preferably a cycloalkyl group having 4 to 15 carbon atoms, and even more preferably a cycloalkyl group having 5 to 10 carbon atoms. Ｘ１ Examples of the cycloalkyl group represented by R include a cyclopentyl group, a 1-methylcyclopentyl group, a cyclohexyl group, an adamantyl group, a 1-ethyladamantyl group, a norbornyl group, a tetracyclodecanyl group, and a tetracyclododecanyl group. Ｘ１ The cycloalkyl group represented by the formula (I) may have a substituent. Ｘ１ one or more methylene groups constituting the cycloalkane ring of the cycloalkyl group represented by the formula: Ｎ３ -, -C(=O)-, -COO-, -S(=O)-, -SO ２-, -SO ３ R may be replaced by a group having a hetero atom such as - or a vinylidene group. Ｎ３ represents a hydrogen atom or a substituent. Ｘ１ In the cycloalkyl group represented by the formula (I), one or more ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group.

[0195] R Ｘ１ The alkenyl group represented by R may be linear or branched, and is preferably an alkenyl group having 2 to 12 carbon atoms, more preferably an alkenyl group having 2 to 6 carbon atoms. Ｘ１ The alkenyl group represented by the following formula may have a substituent.

[0196] R Ｘ１ The cycloalkenyl group represented by the formula (I) may be monocyclic or polycyclic, and is preferably a cycloalkenyl group having 3 to 20 carbon atoms, more preferably a cycloalkenyl group having 4 to 15 carbon atoms, and even more preferably a cycloalkenyl group having 5 to 10 carbon atoms. Ｘ１ The cycloalkenyl group represented by R may have a substituent. Ｘ１ one or more methylene groups constituting the cycloalkene ring of the cycloalkenyl group represented by the formula: Ｎ３ -, -C(=O)-, -COO-, -S(=O)-, -SO ２ -, -SO ３ R may be replaced by a group having a hetero atom such as - or a vinylidene group. Ｎ３ represents a hydrogen atom or a substituent.

[0197] R Ｘ１ The alkynyl group represented by R may be linear or branched, and is preferably an alkynyl group having 2 to 12 carbon atoms, more preferably an alkynyl group having 2 to 6 carbon atoms. Ｘ１ The alkynyl group represented by the following formula may have a substituent.

[0198] R Ｘ１ The cycloalkynyl group represented by the formula (I) may be monocyclic or polycyclic, and is preferably a cycloalkynyl group having 3 to 20 carbon atoms, more preferably a cycloalkynyl group having 4 to 15 carbon atoms, and even more preferably a cycloalkynyl group having 5 to 10 carbon atoms. Ｘ１The cycloalkynyl group represented by the formula (I) may have a substituent. Ｘ１ one or more methylene groups constituting the cycloalkyne ring of the cycloalkynyl group represented by the formula: Ｎ３ -, -C(=O)-, -COO-, -S(=O)-, -SO ２ -, -SO ３ R may be replaced by a group having a hetero atom such as - or a vinylidene group. Ｎ３ represents a hydrogen atom or a substituent.

[0199] R Ｘ１ The aryl group represented by R is preferably an aryl group having 6 to 20 carbon atoms, more preferably an aryl group having 6 to 15 carbon atoms, even more preferably an aryl group having 6 to 10 carbon atoms, particularly preferably a phenyl group or a naphthyl group, and most preferably a phenyl group. Ｘ１ The aryl group represented by the following formula may have a substituent.

[0200] -NA ３ A ４ A in the substituted amino group represented by ３ and A ４ The explanations, specific examples and preferred ranges of the alkyl group, cycloalkyl group and aryl group represented by the formula (I) are as described above for R Ｘ１ The same applies to the alkyl group, cycloalkyl group, and aryl group represented by the formula: A ３ and A ４ Examples of the acyl group represented by the formula (I) include an alkylcarbonyl group, a cycloalkylcarbonyl group, and an arylcarbonyl group. The description, specific examples, and preferred ranges of the alkyl group contained in the alkylcarbonyl group are as described above in R Ｘ１ The explanation, specific examples and preferred ranges of the cycloalkyl group contained in the cycloalkylcarbonyl group are the same as those in the alkyl group represented by the above-mentioned R Ｘ１ The explanation, specific examples and preferred ranges of the aryl group contained in the arylcarbonyl group are the same as those in the cycloalkyl group represented by the above-mentioned R Ｘ１ The same applies to the aryl group represented by the formula: ３ and A ４The description, specific examples and preferred ranges of the alkyl groups contained in the alkoxycarbonyl group represented by R Ｘ１ This is the same as in the alkyl group represented by the formula:

[0201] Y in formula (y-1) １ and Y ３ Each independently represents -O- or -NR-, and R represents a hydrogen atom or a substituent. The substituent represented by R is preferably an organic group, more preferably an alkyl group. The description, specific examples, and preferred range of the organic group represented by R are as described above for R. Ｘ１ The alkyl group represented by R may be linear or branched, and is preferably an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms. The alkyl group represented by R may have a substituent. Y １ and Y ３ preferably represents -O-. In formula (y-1), q represents 0 or 1, preferably represents 0. In formula (y-1), t represents 0 or 1, preferably represents 1. In formula (y-1), r represents 0 or 1, preferably represents 1. Y in formula (y-1) ２ is -C(=O)-, -S(=O)- or -SO ２ represents —, —C(═O)— or —SO ２ It preferably represents -, and more preferably represents -C(=O)-.

[0202] R in formula (y-1) ４ The explanations, specific examples and preferred ranges of the alkyl group, cycloalkyl group, alkenyl group, cycloalkenyl group, alkynyl group, cycloalkynyl group and aryl group represented by R Ｘ１ The meaning of the term "alkyl group", "cycloalkyl group", "alkenyl group", "cycloalkenyl group", "alkynyl group", "cycloalkynyl group" and "aryl group" is the same as that of the term "aryl group".

[0203] R in formula (y-1) ４ preferably represents an alkyl group, a cycloalkyl group or an aryl group, and more preferably represents an alkyl group or a cycloalkyl group.

[0204] R in formula (y-2) Ｙ represents a cyano group, a nitro group, or a group represented by formula (y-1). Ｙ When R represents a group represented by formula (y-1), the explanation, specific examples and preferred ranges of the group represented by formula (y-1) (each symbol in formula (y-1)) are as described above. Ｙ is a cyano group, a nitro group, -COOR ４ , -OCOOR ４ , -OCOR ４ or -SO ２ R ４ and preferably represents a cyano group, a nitro group, —COOR ４ , -OCOOR ４ or -SO ２ R ４ More preferably, it represents a cyano group, —COOR ４ , -OCOOR ４ or -SO ２ R ４ It is more preferable that R ４ The definition, explanation, specific examples and preferred range of are as described above. In formula (y-2), s represents an integer of 1 or more, preferably 1 or 2, and more preferably 1.

[0205] R in formula (X) Ｘ１ In a preferred embodiment of the present invention, R represents an aliphatic hydrocarbon group which may have a heteroatom. Ｘ１ The number of carbon atoms in the aliphatic hydrocarbon group represented by is not particularly limited, but is preferably 1 to 30, and more preferably 1 to 20. Ｘ１ It is particularly preferable that the aliphatic hydrocarbon group represented by R has 5 or more carbon atoms. Ｘ１ Examples of the aliphatic hydrocarbon group represented by R include an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an alkynyl group, a cycloalkynyl group, and a group formed by combining two or more of these groups. Ｘ１ The alkyl group, cycloalkyl group, alkenyl group, cycloalkenyl group, alkynyl group and cycloalkynyl group represented by R are as described above. Ｘ１The heteroatom that may be contained in the aliphatic hydrocarbon group represented by R is not particularly limited, and examples thereof include an oxygen atom, a nitrogen atom, a sulfur atom, and a halogen atom (e.g., a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom). Ｘ１ The aliphatic hydrocarbon group represented by is a carbonyl group, —NR Ｎ４ -, -C(=O)-, -COO-, -S(=O)-, -SO ２ -, -SO ３ R may have a group containing a hetero atom such as -. Ｎ４ represents a hydrogen atom or a substituent.

[0206] L in formula (X) Ｘ１ represents a single bond or a divalent linking group. Ｘ１ The divalent linking group represented by is not particularly limited, and examples thereof include -O-, -CO-, -COO-, -OCOO-, -NR-, -CONR-, -S-, -SO-, and -SO ２ -, an alkylene group, a cycloalkylene group, an alkenylene group, an arylene group, a heterocyclic group, or a group formed by combining two or more of these groups. R represents a hydrogen atom or a substituent. L Ｘ１ The alkylene group represented by is not particularly limited, but is preferably an alkylene group having 1 to 8 carbon atoms, such as a methylene group, an ethylene group, a propylene group, a butylene group, a hexylene group, or an octylene group. Ｘ１ The number of carbon atoms in the cycloalkylene group represented by is not particularly limited, but is preferably 3 to 20, and more preferably 4 to 15. The cycloalkylene group may be a monocyclic cycloalkylene group such as a cyclopentylene group or a cyclohexylene group, or a polycyclic cycloalkylene group such as a norbornylene group, a tetracyclodecanylene group, a tetracyclododecanylene group, or an adamantylene group. One or more methylene groups constituting the cycloalkane ring of the cycloalkylene group may be replaced with a heteroatom such as an oxygen atom, a group having a heteroatom such as a carbonyl group or an ester bond, or a vinylidene group. Furthermore, in the cycloalkylene group, one or more ethylene groups constituting the cycloalkane ring may be replaced with a vinylene group. Ｘ１The alkenylene group represented by is not particularly limited, but is preferably, for example, an alkenylene group having 2 to 8 carbon atoms. Ｘ１ The arylene group represented by is not particularly limited, but examples thereof include arylene groups having 6 to 20 carbon atoms, and preferably arylene groups having 6 to 15 carbon atoms. The arylene group is preferably a phenylene group or a naphthylene group, and particularly preferably a phenylene group. Ｘ１ The heterocyclic group represented by is not particularly limited, and examples thereof include a divalent aromatic ring group or a divalent non-aromatic ring group containing at least one atom selected from the group consisting of a nitrogen atom, an oxygen atom, and a sulfur atom as a ring member. Ｘ１ The number of ring atoms of the heterocyclic group represented by is not particularly limited, but is preferably 4 to 20, and more preferably 5 to 15. Ｘ１ The number of carbon atoms in the heterocyclic group represented by is not particularly limited, but is preferably 1 to 19, more preferably 2 to 14. The substituent represented by R is not particularly limited, but is preferably an organic group, more preferably an alkyl group. The explanation, specific examples, and preferred range of the organic group represented by R are as described above for R. Ｘ１ The alkyl group represented by R may be linear or branched, and is preferably an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and even more preferably an alkyl group having 1 to 6 carbon atoms. The alkyl group represented by R may have a substituent.

[0207] L Ｘ１ is -COO- or -SO ２ It is preferable that it contains -, and more preferable that it contains -COO-. Ｘ１ represents an alkylene group and —COO— or —SO ２ It is also preferred to include -.

[0208] L Ｘ１ The alkylene group, cycloalkylene group, alkenylene group, arylene group, and heterocyclic group represented by may have a substituent. The substituent is not particularly limited, and examples thereof include the above-mentioned substituent T. In addition, the substituent may be the group represented by the above-mentioned formula (y-1) and the group represented by the formula (y-2).

[0209] R in formula (X) Ｘ１represents an aliphatic hydrocarbon group having 5 or more carbon atoms which may have a heteroatom, and L Ｘ１ In a preferred embodiment of the present invention, represents a divalent linking group containing —COO—.

[0210] Rb in formula (1) preferably contains a cyclic structure. The cyclic structure is preferably an aromatic ring or a non-aromatic ring, more preferably a non-aromatic ring, and particularly preferably a cycloalkane ring (cyclic unsaturated hydrocarbon).

[0211] In formula (1), Ra and Rb may be bonded to form a ring. Examples of the ring formed by bonding Ra and Rb include an aromatic or non-aromatic hydrocarbon ring, an aromatic or non-aromatic heterocycle, and a polycyclic fused ring formed by combining two or more of these rings. Examples of the ring formed by bonding Ra and Rb include a 3- to 10-membered ring, preferably a 4- to 8-membered ring, and more preferably a 5- or 6-membered ring.

[0212] The onium salt (B) may be in the form of a low molecular weight compound, or may be in the form incorporated into a part of a polymer. Furthermore, the onium salt (B) may be used in combination with the form of a low molecular weight compound and the form incorporated into a part of a polymer. When the onium salt (B) is in the form of a low molecular weight compound, the molecular weight of the onium salt (B) is preferably 5,000 or less, more preferably 3,000 or less, and particularly preferably 2,000 or less. Furthermore, the molecular weight of the onium salt (B) is preferably 100 or more, more preferably 200 or more. When the onium salt (B) is in the form incorporated into a part of a polymer, it may be incorporated into a part of the resin (A), or may be incorporated into a resin different from the resin (A). The onium salt (B) is preferably in the form of a low molecular weight compound.

[0213] The onium salt (B) may function as a photoacid generator or an acid diffusion controller, which traps the acid generated from the photoacid generator upon exposure and acts as a quencher that inhibits the reaction of the resin (A) in unexposed areas due to excess generated acid.

[0214] The onium salt (B) preferably generates a compound represented by the following formula (1H) upon irradiation with actinic rays or radiation.

[0215]

[0216] In formula (1H), Ra and Rb have the same meanings as Ra and Rb in formula (1), respectively.

[0217] When the onium salt (B) functions as a photoacid generator, the pKa of the compound represented by formula (1H) (SO in formula (1H)) is ３ H is SO ３ － and H ＋ The pKa at the time of dissociation is preferably from -20.0 to 2.0, more preferably from -18.0 to 0.

[0218] When the onium salt (B) functions as an acid diffusion controller, the pKa of the compound represented by formula (1H) (SO in formula (1H)) is ３ H is SO ３ － and H ＋ The pKa at the time of dissociation is preferably from -20.0 to 2.0, more preferably from -18.0 to 0.

[0219] The onium salt (B) may contain a structure represented by the following formula (Am-1): The onium salt (B) containing the structure represented by the following formula (Am-1) can function as both a photoacid generator and an acid diffusion controller.

[0220]

[0221] In formula (Am-1), Q １ ~Q ３ each independently represents a hydrogen atom or an organic group. １ ~Q ３ At least two of these may be bonded to form a ring.

[0222] Q in formula (Am-1) １ ~Q ３ each independently represents a hydrogen atom or an organic group. １ ~Q ３The organic group represented by is not particularly limited, and examples thereof include an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, a heteroaryl group, an aralkyl group, an alkoxy group, an aryloxy group, a carboxy group, an acyl group, an acyloxy group, a formyloxy group, an alkoxycarbonyl group, an alkylsulfoxy group, an arylsulfoxy group, an alkylsulfonyl group, an arylsulfonyl group, —OCO(OR ８ ) or -OCO(NR ９ R １０ ) is preferred. ８ , R ９ and R １０ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, a heteroaryl group, or an aralkyl group.

[0223] Q １ ~Q ３ The alkyl group, cycloalkyl group, alkenyl group, alkynyl group, aryl group, heteroaryl group, aralkyl group, alkoxy group, aryloxy group, carboxy group, acyloxy group, formyloxy group, alkoxycarbonyl group, alkylsulfoxy group, and arylsulfoxy group represented by may further have one or more substituents. For example, the alkyl group may be substituted with a hydroxy group. Furthermore, the hydrogen atom of the carboxy group may be substituted with a substituent.

[0224] Q １ ~Q ３Each group represented by is described below. The number of carbon atoms in the alkyl group is not particularly limited, and may be, for example, 1 to 20, 1 to 10, or 1 to 6. The alkyl group may be either linear or branched. Examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, a t-butyl group, and an n-hexyl group. The same applies to the alkyl group portion in an alkoxy group, the alkyl group portion in an aralkyl group, the alkyl group portion in an alkoxycarbonyl group, the alkyl group portion in an alkylsulfonyl group, the alkyl group portion in an alkylsulfoxy group, the alkyl group portion in an acyl group when the acyl group is an alkylcarbonyl group, and the alkyl group portion in an acyloxy group when the acyloxy group is an alkylcarbonyloxy group. The cycloalkyl group may be a monocyclic cycloalkyl group such as a cyclopentyl group or a cyclohexyl group, or a polycyclic cycloalkyl group such as a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, or an adamantyl group. The number of carbon atoms in the cycloalkyl group is not particularly limited, but may be, for example, 5 to 20 or 5 to 15. The alkenyl group may be either linear or branched. The number of carbon atoms in the alkenyl group is not particularly limited, but may be, for example, 2 to 20, 2 to 10, or 2 to 6. The alkynyl group may be either linear or branched. The number of carbon atoms in the alkynyl group is not particularly limited, but may be, for example, 2 to 20, 2 to 10, or 2 to 6. The aryl group may be either monocyclic or polycyclic (e.g., 2 to 6 rings, etc.). The number of ring atoms in the aryl group is not particularly limited, but may be, for example, 6 to 20, 6 to 15, or 6 to 10. The aryl group is preferably a phenyl group, a naphthyl group, or an anthranyl group, and more preferably a phenyl group.The same applies to the aryl group portion of an aralkyl group, the aryl group portion of an aryloxy group, the aryl group portion of an arylsulfonyl group, the aryl group portion of an arylsulfoxy group, the aryl group portion when the acyl group is an arylcarbonyl group, and the aryl group portion when the acyloxy group is an arylcarbonyloxy group. The heteroaryl group may be either monocyclic or polycyclic (e.g., 2 to 6 rings). The number of heteroatoms contained in the heteroaryl group as ring members is not particularly limited, but may be, for example, 1 to 10. Examples of heteroatoms include nitrogen atoms, sulfur atoms, oxygen atoms, selenium atoms, tellurium atoms, phosphorus atoms, silicon atoms, and boron atoms. The number of ring members of the heteroaryl group is not particularly limited, but may be, for example, 5 to 15.

[0225] R ８ , R ９ and R １０ R each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aryl group, a heteroaryl group, or an aralkyl group. ８ , R ９ and R １０ The explanations, specific examples and preferred ranges of the alkyl group, cycloalkyl group, alkenyl group, alkynyl group, aryl group, heteroaryl group and aralkyl group represented by Q are respectively described above. １ ~Q ３ It is similar to that in

[0226] Q １ ~Q ３ may contain a cation or anion. １ ~Q ３ The atom or atomic group contained in may release an electron to become a cation, or may accept an electron to become an anion.

[0227] When the onium salt (B) contains a structure represented by formula (Am-1), the organic anion in formula (1) and Z ＋ At least one of the organic anions contains a structure represented by formula (Am-1), and the organic anion and Z ＋At least one of the groups may be represented by formula (Am-1), or a part of the atomic groups contained in the organic anion and Z ＋ At least one of the atomic groups contained in the organic anion in formula (1) may be represented by formula (Am-1). When the onium salt (B) contains a structure represented by formula (Am-1), it is preferable that a part of the atomic groups contained in the organic anion in formula (1) is represented by formula (Am-1).

[0228] The structure represented by formula (Am-1) is preferably not a structure represented by formula (XX-1) or (XX-2) below.

[0229]

[0230] In formula (XX-1) and formula (XX-2), Q １ ~Q ４ each independently represents a hydrogen atom or an organic group. １ ~Q ４ At least two of these may be bonded to form a ring. １ ~Q ３ The organic group represented by is as described above. ４ The organic group represented by Q is explained above. １ ~Q ３ It is similar to that in

[0231] From the viewpoint of LWR performance, it is preferable that the fluorine atom content of the onium salt (B) is low. The fluorine atom content of the onium salt (B) is preferably 20 mass% or less, more preferably 10 mass% or less, even more preferably 5 mass% or less, particularly preferably 2 mass% or less, and most preferably 0 mass%. The fluorine atom content of the onium salt (B) is the mass ratio of fluorine atoms to all atoms in the onium salt (B). The fluorine atom content (mass%) of the onium salt (B) can be calculated by the following formula: 100×19×[F] / M ｗＢ In the formula, [F] represents the number of fluorine atoms contained in the onium salt (B), and M ｗＢ represents the molecular weight of the onium salt (B).

[0232] The content of the onium salt (B) in the composition of the present invention is not particularly limited, but is preferably 0.1 to 50.0 mass% relative to the total solids content of the composition of the present invention, more preferably 0.5 to 45.0 mass%, and even more preferably 1.0 to 40.0 mass%. The onium salt (B) may be used alone, or two or more types may be used. When two or more types are used, the total content thereof preferably falls within the above-mentioned preferred content range.

[0233] [Compound (C) that generates an acid upon irradiation with actinic rays or radiation] The composition of the present invention may further contain a compound (C) that generates an acid upon irradiation with actinic rays or radiation (photoacid generator), which is different from the onium salt (B). The compound (C) may be in the form of a low molecular weight compound or may be incorporated into a part of a polymer. Furthermore, the compound (C) may be used in combination with a low molecular weight compound and a part of a polymer. When the compound (C) is in the form of a low molecular weight compound, the molecular weight of the compound (C) is preferably 5,000 or less, more preferably 4,000 or less, and even more preferably 3,000 or less. The lower limit of the molecular weight of the compound (C) is not particularly limited, but is preferably 100 or more. When the compound (C) is in the form of a part of a polymer, it may be incorporated into a part of the resin (A) or into a resin different from the resin (A). The compound (C) is preferably in the form of a low molecular weight compound.

[0234] Examples of the compound (C) include "M ＋ X － ", and it is preferably a compound that generates an organic acid upon exposure. Examples of the organic acid include sulfonic acids (aliphatic sulfonic acids, aromatic sulfonic acids, camphorsulfonic acids, etc.), carboxylic acids (aliphatic carboxylic acids, aromatic carboxylic acids, aralkyl carboxylic acids, etc.), carbonylsulfonylimide acids, bis(alkylsulfonyl)imide acids, and tris(alkylsulfonyl)methide acids.

[0235] "M ＋ X － In the compound represented by the formula ", M＋ represents a cation, and preferably represents an organic cation. ＋ represents an organic cation, ＋ The explanation, specific examples and preferred ranges of Z in the above formula (1) are ＋ It is similar to that in

[0236] "M ＋ X － In the compound represented by the formula "X － represents an anion, preferably an organic anion. The organic anion is not particularly limited, and examples thereof include monovalent or divalent or higher organic anions. The organic anion is preferably an anion having a significantly low ability to cause a nucleophilic reaction, and more preferably a non-nucleophilic anion.

[0237] Examples of non-nucleophilic anions include sulfonate anions (aliphatic sulfonate anions, aromatic sulfonate anions, camphorsulfonate anions, etc.), carboxylate anions (aliphatic carboxylate anions, aromatic carboxylate anions, aralkyl carboxylate anions, etc.), sulfonylimide anions, bis(alkylsulfonyl)imide anions, and tris(alkylsulfonyl)methide anions.

[0238] The aliphatic moiety in the aliphatic sulfonate anion and the aliphatic carboxylate anion may be a linear or branched alkyl group or a cycloalkyl group, and is preferably a linear or branched alkyl group having 1 to 30 carbon atoms or a cycloalkyl group having 3 to 30 carbon atoms. The alkyl group may be, for example, a fluoroalkyl group (which may have a substituent other than a fluorine atom, or may be a perfluoroalkyl group).

[0239] The aryl group in the aromatic sulfonate anion and aromatic carboxylate anion is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a tolyl group, and a naphthyl group.

[0240] The alkyl group, cycloalkyl group, and aryl group mentioned above may have a substituent. The substituent is not particularly limited, but examples thereof include a nitro group, a halogen atom such as a fluorine atom or a chlorine atom, a carboxyl group, a hydroxyl group, an amino group, a cyano group, an alkoxy group (preferably having 1 to 15 carbon atoms), an alkyl group (preferably having 1 to 10 carbon atoms), a cycloalkyl group (preferably having 3 to 15 carbon atoms), an aryl group (preferably having 6 to 14 carbon atoms), an alkoxycarbonyl group (preferably having 2 to 7 carbon atoms), an acyl group (preferably having 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably having 2 to 7 carbon atoms), an alkylthio group (preferably having 1 to 15 carbon atoms), an alkylsulfonyl group (preferably having 1 to 15 carbon atoms), an alkyliminosulfonyl group (preferably having 1 to 15 carbon atoms), and an aryloxysulfonyl group (preferably having 6 to 20 carbon atoms).

[0241] The aralkyl group in the aralkyl carboxylate anion is preferably an aralkyl group having 7 to 14 carbon atoms. Examples of the aralkyl group having 7 to 14 carbon atoms include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthylbutyl group.

[0242] An example of the sulfonylimide anion is a saccharin anion.

[0243] The alkyl group in the bis(alkylsulfonyl)imide anion and the tris(alkylsulfonyl)methide anion is preferably an alkyl group having 1 to 5 carbon atoms. Substituents for these alkyl groups include halogen atoms, alkyl groups substituted with halogen atoms, alkoxy groups, alkylthio groups, alkyloxysulfonyl groups, aryloxysulfonyl groups, and cycloalkylaryloxysulfonyl groups, with fluorine atoms or alkyl groups substituted with fluorine atoms being preferred. Furthermore, the alkyl groups in the bis(alkylsulfonyl)imide anion may be bonded to each other to form a ring structure, which increases the acid strength.

[0244] Other non-nucleophilic anions include, for example, phosphorus fluorides (e.g., PF ６－ ), boron fluorides (e.g., BF ４ － ), and antimony fluorides (e.g., SbF ６ － ) are listed.

[0245] The non-nucleophilic anion is also preferably an anion represented by the following formula (AN1).

[0246]

[0247] In formula (AN1), R １ and R ２ each independently represents a hydrogen atom or a substituent. The substituent is not particularly limited, but a group that is not an electron-withdrawing group is preferred. Examples of groups that are not electron-withdrawing groups include hydrocarbon groups, hydroxyl groups, oxyhydrocarbon groups, oxycarbonyl hydrocarbon groups, amino groups, hydrocarbon-substituted amino groups, and hydrocarbon-substituted amide groups. Examples of groups that are not electron-withdrawing groups include, each independently, -R', -OH, -OR', -OCOR', -NH ２ , -NR' ２ , —NHR′, or —NHCOR′ is preferred, where R′ is a monovalent hydrocarbon group.

[0248] Examples of the monovalent hydrocarbon group represented by R' include monovalent linear or branched hydrocarbon groups such as alkyl groups such as methyl, ethyl, propyl, and butyl; alkenyl groups such as ethenyl, propenyl, and butenyl; alkynyl groups such as ethynyl, propynyl, and butynyl; cycloalkyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, norbornyl, and adamantyl; monovalent alicyclic hydrocarbon groups such as cycloalkenyl groups such as cyclopropenyl, cyclobutenyl, cyclopentenyl, and norbornenyl; aryl groups such as phenyl, tolyl, xylyl, mesityl, naphthyl, methylnaphthyl, anthryl, and methylanthryl; and aralkyl groups such as benzyl, phenethyl, phenylpropyl, naphthylmethyl, and anthrylmethyl. Among these, R １ and R２ are each independently preferably a hydrocarbon group (preferably a cycloalkyl group) or a hydrogen atom.

[0249] L represents a divalent linking group. When a plurality of L's are present, they may be the same or different. Examples of the divalent linking group include -O-CO-O-, -COO-, -CONH-, -CO-, -O-, -S-, -SO-, and -SO ２ Examples of the divalent linking group include -, an alkylene group (preferably having 1 to 6 carbon atoms), a cycloalkylene group (preferably having 3 to 15 carbon atoms), an alkenylene group (preferably having 2 to 6 carbon atoms), and a divalent linking group formed by combining a plurality of these groups. Among these, examples of the divalent linking group include -O-CO-O-, -COO-, -CONH-, -CO-, -O-, and -SO ２ -, -O-CO-O-alkylene group-, -COO-alkylene group-, or -CONH-alkylene group- is preferred, and -O-CO-O-, -O-CO-O-alkylene group-, -COO-, -CONH-, or -SO ２ - or -COO-alkylene group- is more preferred.

[0250] As L, for example, a group represented by the following formula (AN1-1) is preferable: ａ - (CR ２ａ ２ ) Ｘ -Q-(CR ２ｂ ２ ) Ｙ -* ｂ (AN1-1)

[0251] In formula (AN1-1), * ａ is R in formula (AN1). ３ Represents the bonding position with * ｂ represents -C(R １ ) (R ２ X and Y each independently represent an integer of 0 to 10, preferably an integer of 0 to 3. R ２ａ and R ２ｂ R each independently represents a hydrogen atom or a substituent. ２ａ and R ２ｂ When there are multiple R２ａ and R ２ｂ may be the same or different, provided that when Y is 1 or more, -C(R １ ) (R ２ )- and CR directly bonded ２ｂ ２ R in ２ｂ is other than a fluorine atom. Q is * Ａ -O-CO-O-* Ｂ , * Ａ -CO-* Ｂ , * Ａ -CO-O-* Ｂ , * Ａ -O-CO-* Ｂ , * Ａ -O-* Ｂ , * Ａ -S-* Ｂ , or * Ａ -SO ２ -* Ｂ where X+Y in formula (AN1-1) is 1 or more, and R ２ａ and R ２ｂ are all hydrogen atoms, Q is * Ａ -O-CO-O-* Ｂ , * Ａ -CO-* Ｂ , * Ａ -O-CO-* Ｂ , * Ａ -O-* Ｂ , * Ａ -S-* Ｂ , or * Ａ -SO ２ -* Ｂ Represents. Ａ is R in formula (AN1). ３ represents the bonding position on the side, and * Ｂ represents -SO in formula (AN1). ３ － represents the bonding position on the side.

[0252] In formula (AN1), R ３represents an organic group. The organic group is not particularly limited as long as it has one or more carbon atoms, and may be a linear group (for example, a linear alkyl group), a branched group (for example, a branched alkyl group such as a t-butyl group), or a cyclic group. The organic group may or may not have a substituent. The organic group may or may not have a heteroatom (such as an oxygen atom, a sulfur atom, and / or a nitrogen atom).

[0253] Among them, R ３ is preferably an organic group having a cyclic structure. The cyclic structure may be monocyclic or polycyclic and may have a substituent. The ring in the organic group having a cyclic structure is preferably directly bonded to L in formula (AN1). The organic group having a cyclic structure may or may not have a heteroatom (oxygen atom, sulfur atom, and / or nitrogen atom, etc.). The heteroatom may be substituted for one or more of the carbon atoms forming the cyclic structure. The organic group having a cyclic structure is preferably, for example, a hydrocarbon group having a cyclic structure, a lactone ring group, or a sultone ring group. Among these, the organic group having a cyclic structure is preferably a hydrocarbon group having a cyclic structure. The hydrocarbon group having a cyclic structure is preferably a monocyclic or polycyclic cycloalkyl group. These groups may have a substituent. The cycloalkyl group may be monocyclic (e.g., a cyclohexyl group) or polycyclic (e.g., an adamantyl group), and preferably has 5 to 12 carbon atoms. As the lactone group and sultone group, for example, a group in which one hydrogen atom has been removed from a ring member atom constituting the lactone structure or sultone structure in any of the structures represented by the above-mentioned formulae (LC1-1) to (LC1-22) and the structures represented by the above-mentioned formulae (SL1-1) to (SL1-3) is preferred.

[0254] The non-nucleophilic anion may be a benzenesulfonate anion, and is preferably a benzenesulfonate anion substituted with a branched alkyl group or a cycloalkyl group.

[0255] The non-nucleophilic anion is also preferably an anion represented by the following formula (AN2).

[0256]

[0257] In formula (AN2), o represents an integer of 1 to 3. p represents an integer of 0 to 10. q represents an integer of 0 to 10.

[0258] Xf represents a hydrogen atom, a fluorine atom, an alkyl group substituted with at least one fluorine atom, or an organic group having no fluorine atoms. The number of carbon atoms in this alkyl group is preferably 1 to 10, more preferably 1 to 4. The alkyl group substituted with at least one fluorine atom is preferably a perfluoroalkyl group. Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, and is preferably a fluorine atom or CF ３ It is more preferable that both Xf's are fluorine atoms.

[0259] R ４ and R ５ R each independently represents a hydrogen atom, a fluorine atom, an alkyl group, or an alkyl group substituted with at least one fluorine atom. ４ and R ５ If there are multiple R ４ and R ５ may be the same or different. ４ and R ５ The alkyl group represented by the formula (I) preferably has 1 to 4 carbon atoms. The alkyl group may have a substituent. ４ and R ５ is preferably a hydrogen atom.

[0260] L represents a divalent linking group, and is defined as L in formula (AN1).

[0261] W represents an organic group containing a cyclic structure. Among these, a cyclic organic group is preferred. Examples of the cyclic organic group include an alicyclic group, an aryl group, and a heterocyclic group. The alicyclic group may be monocyclic or polycyclic. Examples of the monocyclic alicyclic group include a monocyclic cycloalkyl group such as a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group. Examples of the polycyclic alicyclic group include a polycyclic cycloalkyl group such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group. Among these, alicyclic groups having a bulky structure with 7 or more carbon atoms, such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group, are preferred.

[0262] The aryl group may be monocyclic or polycyclic. Examples of the aryl group include a phenyl group, a naphthyl group, a phenanthryl group, and an anthryl group. The heterocyclic group may be monocyclic or polycyclic. In particular, a polycyclic heterocyclic group can further suppress the diffusion of acid. The heterocyclic group may or may not have aromaticity. Examples of heterocyclic rings having aromaticity include a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, and a pyridine ring. Examples of heterocyclic rings having no aromaticity include a tetrahydropyran ring, a lactone ring, a sultone ring, and a decahydroisoquinoline ring. The heterocyclic ring in the heterocyclic group is preferably a furan ring, a thiophene ring, a pyridine ring, or a decahydroisoquinoline ring.

[0263] The cyclic organic group may have a substituent. Examples of the substituent include an alkyl group (which may be either linear or branched, and preferably has 1 to 12 carbon atoms), a cycloalkyl group (which may be either monocyclic, polycyclic, or spirocyclic, and preferably has 3 to 20 carbon atoms), an aryl group (which preferably has 6 to 14 carbon atoms), a hydroxyl group, an alkoxy group, an ester group, an amide group, a urethane group, a ureido group, a thioether group, a sulfonamide group, and a sulfonate ester group. The carbon constituting the cyclic organic group (the carbon that contributes to ring formation) may be a carbonyl carbon.

[0264] The anion represented by formula (AN2) is SO ３ － -CF ２ -CH ２ -OCO-(L) ｑ’ -W, SO ３ － -CF ２ -CHF-CH ２ -OCO-(L) ｑ’ -W, SO ３ － -CF ２ -COO-(L) ｑ’ -W, SO ３ － -CF ２ -CF ２ -CH ２ -CH ２ - (L) ｑ -W or SO ３ － -CF ２ -CH(CF ３ ) -OCO-(L) ｑ’ -W is preferred. Here, L, q and W are the same as those in formula (AN2). q' represents an integer of 0 to 10.

[0265] The non-nucleophilic anion is also preferably an aromatic sulfonate anion represented by the following formula (AN3).

[0266]

[0267] In formula (AN3), Ar represents an aryl group (such as a phenyl group) and may further have a substituent other than the sulfonate anion and the -(D-B) group. Examples of the substituent that may further be had include a fluorine atom and a hydroxyl group. n represents an integer of 0 or greater. n is preferably 1 to 4, more preferably 2 to 3, and even more preferably 3.

[0268] D represents a single bond or a divalent linking group. Examples of the divalent linking group include an ether group, a thioether group, a carbonyl group, a sulfoxide group, a sulfone group, a sulfonate ester group, an ester group, and a group formed by combining two or more of these groups.

[0269] B represents a hydrocarbon group. B is preferably an aliphatic hydrocarbon group, more preferably an isopropyl group, a cyclohexyl group, or an aryl group which may further have a substituent (such as a tricyclohexylphenyl group).

[0270] As the non-nucleophilic anion, a disulfonamide anion is also preferred. The disulfonamide anion is, for example, N － (SO ２ -R ｑ ) ２ where R ｑ represents an alkyl group which may have a substituent, preferably a fluoroalkyl group, more preferably a perfluoroalkyl group. ｑ may be bonded to each other to form a ring. ｑ The group formed by bonding together is preferably an alkylene group which may have a substituent, more preferably a fluoroalkylene group, and even more preferably a perfluoroalkylene group. The alkylene group preferably has 2 to 4 carbon atoms.

[0271] It is also preferable that the compound (C) is at least one selected from the group consisting of the compounds (I) to (II).

[0272] (Compound (I)) Compound (I) is a compound having one or more structural moieties X and one or more structural moieties Y, which generates an acid containing the first acidic moiety derived from the structural moiety X and the second acidic moiety derived from the structural moiety Y when irradiated with actinic rays or radiation. Structural moiety X: Anionic moiety A １ － and the cationic moiety M １ ＋ and by irradiation with actinic rays or radiation, HA １ Structural moiety Y: anionic moiety A, which forms a first acidic moiety represented by the formula: ２ － and the cationic moiety M ２ ＋ and by irradiation with actinic rays or radiation, HA ２ The compound (I) satisfies the following condition I:

[0273] Condition I: In the compound (I), the cationic moiety M in the structural moiety X １ ＋ and the cationic moiety M in the structural moiety Y ２ ＋ H ＋ The compound PI in which the cation moiety M in the structural moiety X is replaced by １ ＋ H ＋ HA is replaced by １ and the cationic moiety M in the structural moiety Y. ２ ＋ H ＋ HA is replaced by ２ and an acid dissociation constant a2 derived from the acidic site represented by the formula (I), and the acid dissociation constant a2 is greater than the acid dissociation constant a1.

[0274] Condition I will be explained in more detail below. For example, when compound (I) is an acid-generating compound having one of the first acidic sites derived from the structural moiety X and one of the second acidic sites derived from the structural moiety Y, compound PI is "HA １ and H.A.２ The acid dissociation constant a1 and the acid dissociation constant a2 of the compound PI correspond to "a compound having the following structure." More specifically, when the acid dissociation constant of the compound PI is calculated, the acid dissociation constant a1 and the acid dissociation constant a2 of the compound PI correspond to "a compound having the following structure." １ － and H.A. ２ The pKa at which the compound becomes "a compound having the above formula (A)" is the acid dissociation constant a1, １ － and H.A. ２ "A compound having １ － and A ２ － The pKa at which the compound becomes "a compound having the above formula (I)" is the acid dissociation constant a2.

[0275] For example, when compound (I) is an acid-generating compound having two of the first acidic sites derived from the structural site X and one of the second acidic sites derived from the structural site Y, compound PI is a compound having two HAs. １ and one HA ２ When the acid dissociation constant of compound PI is calculated, compound PI corresponds to "a compound having one A １ － and one HA １ and one HA ２ and the acid dissociation constant when "a compound having one A １ － and one HA １ and one HA ２ "Compound having two A １ － and one HA ２ The acid dissociation constant when the compound is a compound having two A's corresponds to the acid dissociation constant a1 described above. １ － and one HA ２ "Compound having two A １ － and A ２ － In other words, in the case of compound PI, the acid dissociation constant when the compound becomes a compound having the cation moiety M in the structural moiety X corresponds to the acid dissociation constant a2. １ ＋ H ＋ HA is replaced by１ When the compound PI has a plurality of acid dissociation constants derived from the acidic moiety represented by the formula (I), the value of the acid dissociation constant a2 is larger than the largest value of the plurality of acid dissociation constants a1. １ － and one HA １ and one HA ２ The acid dissociation constant when the compound is aa is defined as "a compound having one A １ － and one HA １ and one HA ２ "Compound having two A １ － and one HA ２ When the acid dissociation constant when the compound becomes "a compound having the formula (I)" is ab, the relationship between aa and ab satisfies aa<ab.

[0276] The acid dissociation constants a1 and a2 are determined by the above-mentioned method for measuring an acid dissociation constant. The compound PI corresponds to an acid generated when compound (I) is irradiated with actinic rays or radiation. When compound (I) has two or more structural moieties X, the structural moieties X may be the same or different. In addition, when two or more of the above A １ － and two or more of the above M １ ＋ In compound (I), the above A １ － and the above A ２ － , and the above M １ ＋ and the above M ２ ＋ may be the same or different, but １ － and the above A ２ － are preferably different from each other.

[0277] In the compound PI, the difference (absolute value) between the acid dissociation constant a1 (the maximum value when there are multiple acid dissociation constants a1) and the acid dissociation constant a2 is preferably 0.1 or more, more preferably 0.5 or more, and even more preferably 1.0 or more. The upper limit of the difference (absolute value) between the acid dissociation constant a1 (the maximum value when there are multiple acid dissociation constants a1) and the acid dissociation constant a2 is not particularly limited, but is, for example, 16 or less.

[0278] In the compound PI, the acid dissociation constant a2 is preferably not more than 20, more preferably not more than 15. The lower limit of the acid dissociation constant a2 is preferably not less than −4.0.

[0279] In the compound PI, the acid dissociation constant a1 is preferably 2.0 or less, and more preferably 0 or less. The lower limit of the acid dissociation constant a1 is preferably −20.0 or more.

[0280] Anion site A １ － and anionic moiety A ２ － is a structural moiety containing a negatively charged atom or atomic group, and examples thereof include structural moieties selected from the group consisting of formulae (AA-1) to (AA-3) and formulae (BB-1) to (BB-6) shown below. １ － As the anionic moiety A, those capable of forming an acidic moiety with a small acid dissociation constant are preferred, and among these, any of formulas (AA-1) to (AA-3) is more preferred, and any of formulas (AA-1) and (AA-3) is even more preferred. ２ － As the anion moiety A １ － Preferably, it is one that can form an acidic site with a larger acid dissociation constant than the above, more preferably any of formulas (BB-1) to (BB-6), and even more preferably any of formulas (BB-1) and (BB-4). In the following formulas (AA-1) to (AA-3) and formulas (BB-1) to (BB-6), * represents a bonding position. In formula (AA-2), R Ａ represents a monovalent organic group. ＡThe monovalent organic group represented by the formula (I) is not particularly limited, but examples thereof include a cyano group, a trifluoromethyl group, and a methanesulfonyl group.

[0281]

[0282]

[0283] Cationic moiety M １ ＋ and cationic moiety M ２ ＋ is a structural moiety containing a positively charged atom or atomic group, and examples thereof include monovalent organic cations. ＋ Examples of the organic cation include those represented by the following formula:

[0284] (Compound (II)) Compound (II) is a compound having two or more of the above structural moieties X and one or more of the following structural moieties Z, which generates an acid containing two or more of the first acidic moieties derived from the structural moiety X and the structural moiety Z upon irradiation with actinic rays or radiation. Structural moiety Z: a ​​nonionic moiety capable of neutralizing an acid

[0285] In compound (II), the definition of the structural moiety X and A １ － and M １ ＋ The definition of the structural moiety X in the compound (I) and the definition of A １ － and M １ ＋ The definition and preferred embodiments are also the same.

[0286] In the compound (II), the cation moiety M in the structural moiety X １ ＋ H ＋ In the compound PII, the cationic moiety M in the structural moiety X is replaced by １ ＋ H ＋ HA is replaced by １The preferred range of the acid dissociation constant a1 derived from the acidic moiety represented by the formula (I) is the same as the acid dissociation constant a1 in the compound PI. In addition, when the compound (II) is, for example, a compound that generates an acid having two of the first acidic moieties derived from the structural moiety X and the structural moiety Z, the compound PII is a compound that generates an acid having two HAs. １ When the acid dissociation constant of this compound PII was calculated, it was found that the compound PII has "one A １ － and one HA １ and the acid dissociation constant when "a compound having one A １ － and one HA １ "Compound having two A １ － The acid dissociation constant when the compound becomes "a compound having the formula (I)" corresponds to the acid dissociation constant a1.

[0287] The acid dissociation constant a1 is determined by the above-mentioned method for measuring an acid dissociation constant. The compound PII corresponds to the acid generated when the compound (II) is irradiated with actinic rays or radiation. The two or more structural moieties X may be the same or different. １ － and two or more of the above M １ ＋ may be the same or different.

[0288] The nonionic moiety capable of neutralizing an acid in the structural moiety Z is not particularly limited, and is preferably, for example, a moiety containing a group capable of electrostatically interacting with a proton or a functional group having electrons. Examples of the group capable of electrostatically interacting with a proton or the functional group having electrons include functional groups having a macrocyclic structure such as cyclic polyethers, and functional groups having a nitrogen atom with an unshared electron pair that does not contribute to π-conjugation. The nitrogen atom with an unshared electron pair that does not contribute to π-conjugation is, for example, a nitrogen atom having a partial structure shown in the following formula:

[0289]

[0290] Examples of the partial structure of a functional group having a group or electron capable of electrostatically interacting with a proton include a crown ether structure, an azacrown ether structure, a primary amine structure, a secondary amine structure, a tertiary amine structure, a pyridine structure, an imidazole structure, and a pyrazine structure. Of these, a primary amine structure, a secondary amine structure, a tertiary amine structure, and a tertiary amine structure are preferred.

[0291] Examples of moieties other than cations that Compound (I) and Compound (II) may have are shown below.

[0292]

[0293]

[0294] Specific examples of compound (C) include the compounds described in paragraphs

[0320] to

[0321] of WO 2022 / 172715. The above descriptions are incorporated herein by reference.

[0295] The fluorine atom content of compound (C) is preferably 20% by mass or less, more preferably 10% by mass or less, even more preferably 5% by mass or less, particularly preferably 2% by mass or less, and most preferably 0% by mass. The fluorine atom content of compound (C) is the mass ratio of fluorine atoms to all atoms in compound (C). The fluorine atom content (% by mass) of compound (C) can be calculated by the following formula: 100 x 19 x [F] / M ｗＣ In the formula, [F] represents the number of fluorine atoms contained in the compound (C), and M ｗＣ represents the molecular weight of compound (C).

[0296] When the composition of the present invention contains compound (C), the content of compound (C) is not particularly limited, but is preferably 0.1 mass% or more, more preferably 1.0 mass% or more, based on the total solid content of the composition of the present invention.In addition, the content of compound (C) is preferably 60.0 mass% or less, more preferably 50.0 mass% or less, and even more preferably 40.0 mass% or less, based on the total solid content of the composition of the present invention.Compound (C) may be used alone or in combination of two or more.When two or more types are used, it is preferable that the total content is within the above-mentioned preferred content range.

[0297] [Acid Diffusion Controller] The composition of the present invention may further contain an acid diffusion controller (also referred to as "compound (D)"). Compound (D) is a compound different from onium salt (B). The acid diffusion controller can act as a quencher that traps the acid generated from the photoacid generator upon exposure and suppresses the reaction of the resin, which becomes more polar due to the action of excess acid generated in unexposed areas. Compound (D) may be in the form of a low molecular weight compound or may be incorporated into a polymer. Compound (D) may also be used in combination with a low molecular weight compound and a polymer. When compound (D) is in the form of a low molecular weight compound, the molecular weight of compound (D) is preferably 5,000 or less, more preferably 4,000 or less, and even more preferably 3,000 or less. The lower limit of the molecular weight of compound (D) is not particularly limited, but may be, for example, 100 or more. When compound (D) is in the form of a polymer, it may be incorporated into resin (A) or a resin different from resin (A). The compound (D) is preferably in the form of a low molecular weight compound.

[0298] The type of compound (D) is not particularly limited, and examples thereof include a basic compound (DA), a low-molecular-weight compound (DB) having a nitrogen atom and a group that is cleaved by the action of an acid, and a compound (DC) whose acid diffusion control ability is reduced or eliminated by irradiation with actinic rays or radiation. Examples of the compound (DC) include an onium salt compound (DD) that is a weak acid relative to the photoacid generator, and a basic compound (DE) whose basicity is reduced or eliminated by irradiation with actinic rays or radiation. Specific examples of the basic compound (DA) include those described in paragraphs

[0132] to

[0136] of WO 2020 / 066824, and specific examples of the basic compound (DE) whose basicity is reduced or eliminated by irradiation with actinic rays or radiation include those described in paragraphs

[0137] to

[0155] of WO 2020 / 066824, and those described in paragraph

[0164] of WO 2020 / 066824. Specific examples of low molecular weight compounds (DB) having a nitrogen atom and having a group that leaves under the action of an acid include those described in paragraphs

[0156] to

[0163] of WO 2020 / 066824. Specific examples of the onium salt compound (DD) that is a weaker acid than the photoacid generator include those described in paragraphs

[0305] to

[0314] of WO 2020 / 158337.

[0299] In addition to the above, for example, known compounds disclosed in paragraphs

[0627] to

[0664] of U.S. Patent Application Publication No. 2016 / 0070167A1, paragraphs

[0095] to

[0187] of U.S. Patent Application Publication No. 2015 / 0004544A1, paragraphs

[0403] to

[0423] of U.S. Patent Application Publication No. 2016 / 0237190A1, and paragraphs

[0259] to

[0328] of U.S. Patent Application Publication No. 2016 / 0274458A1 can be suitably used as the acid diffusion controller.

[0300] The fluorine atom content of compound (D) is preferably 20% by mass or less, more preferably 10% by mass or less, even more preferably 5% by mass or less, particularly preferably 2% by mass or less, and most preferably 0% by mass. The fluorine atom content of compound (D) is the mass ratio of fluorine atoms to all atoms in compound (D). The fluorine atom content (% by mass) of compound (D) can be calculated by the following formula: 100 x 19 x [F] / M ｗＤ In the formula, [F] represents the number of fluorine atoms contained in the compound (D), and M ｗＤ represents the molecular weight of compound (D).

[0301] When the composition of the present invention contains compound (D), the content of compound (D) is not particularly limited, but is preferably 0.01 to 30.0 mass%, more preferably 0.05 to 20.0 mass%, and even more preferably 0.1 to 15.0 mass%, based on the total solid content of the composition of the present invention. Compound (D) may be used alone, or two or more types may be used. When two or more types are used, it is preferable that the total content is within the above-mentioned suitable content range.

[0302] [Hydrophobic Resin] The composition of the present invention may further contain a hydrophobic resin (also referred to as "hydrophobic resin (E)") different from resin (A). The hydrophobic resin (E) is preferably designed so as to be unevenly distributed on the surface of the resist film, but unlike surfactants, it does not necessarily have to have a hydrophilic group in its molecule, and it does not necessarily have to contribute to uniform mixing of polar and non-polar substances. Effects of adding hydrophobic resin (E) include control of the static and dynamic contact angles of water on the resist film surface, and suppression of outgassing.

[0303] The hydrophobic resin (E) contains fluorine atoms, silicon atoms, and CH atoms contained in the side chain portion of the resin in order to be unevenly distributed on the surface layer of the film. ３It is preferable to have one or more of the partial structures, and more preferably two or more. The hydrophobic resin preferably has a hydrocarbon group having 5 or more carbon atoms. These groups may be present in the main chain of the resin or may be substituted on a side chain. Examples of the hydrophobic resin (E) include the compounds described in paragraphs

[0275] to

[0279] of WO 2020 / 004306.

[0304] When the composition of the present invention contains a hydrophobic resin (E), the content of the hydrophobic resin (E) is not particularly limited, but is preferably 0.01 to 20.0 mass% and more preferably 0.1 to 15.0 mass% based on the total solid content of the composition of the present invention. The hydrophobic resin (E) may be used alone or in combination of two or more. When two or more types are used, the total content thereof is preferably within the above-mentioned preferred content range.

[0305] [Surfactant] The composition of the present invention may contain a surfactant. When a surfactant is contained, a pattern with better adhesion and fewer development defects can be formed. The surfactant is preferably a fluorine-based and / or silicon-based surfactant. Examples of the fluorine-based and / or silicon-based surfactant include the surfactants disclosed in paragraphs

[0218] and

[0219] of WO 2018 / 193954.

[0306] The surfactant may be used alone or in combination of two or more.

[0307] When the composition of the present invention contains a surfactant, the content of the surfactant is not particularly limited, but is preferably 0.0001 to 2.0 mass%, more preferably 0.0005 to 1.0 mass%, and even more preferably 0.1 to 1.0 mass%, relative to the total solid content of the composition of the present invention. The surfactant may be used alone, or two or more types may be used. When two or more types are used, the total content thereof preferably falls within the above-mentioned preferred content range.

[0308] [Solvent] The composition of the present invention preferably contains a solvent. The solvent preferably contains (M1) propylene glycol monoalkyl ether carboxylate and (M2) at least one selected from the group consisting of propylene glycol monoalkyl ether, lactate ester, acetate ester, alkoxypropionate ester, linear ketone, cyclic ketone, lactone, and alkylene carbonate. The solvent may further contain components other than components (M1) and (M2).

[0309] Combining the above-mentioned solvent with the above-mentioned resin is preferable in terms of improving the coatability of the composition of the present invention and reducing the number of development defects in the pattern. The above-mentioned solvent has a good balance of the solubility, boiling point, and viscosity of the above-mentioned resin, and therefore can suppress unevenness in the film thickness of the resist film and the occurrence of precipitates during spin coating. Details of component (M1) and component (M2) are described in paragraphs

[0218] to

[0226] of WO 2020 / 004306, the contents of which are incorporated herein by reference.

[0310] When the solvent further contains components other than the components (M1) and (M2), the content of the components other than the components (M1) and (M2) is preferably 5 to 30 mass % based on the total amount of the solvent.

[0311] The content of the solvent in the composition of the present invention is not particularly limited, but is preferably determined so that the solids concentration in the composition of the present invention is 0.5 to 30 mass %, more preferably 1 to 20 mass %, which further improves the coatability of the composition of the present invention.

[0312] [Other Additives] The composition of the present invention may further contain a dissolution inhibiting compound, a dye, a plasticizer, a photosensitizer, a light absorber, and / or a compound that promotes solubility in a developer (for example, a phenol compound having a molecular weight of 1,000 or less, or an alicyclic or aliphatic compound containing a carboxyl group).

[0313] The "dissolution inhibiting compound" is a compound having a molecular weight of 3,000 or less, which is decomposed by the action of an acid and has a reduced solubility in an organic developer.

[0314] The composition of the present invention is also suitable as a photosensitive composition for EUV exposure.

[0315] <Actinic ray- or radiation-sensitive film, pattern forming method> The present invention also relates to an actinic ray- or radiation-sensitive film formed from the composition of the present invention. The actinic ray- or radiation-sensitive film of the present invention is preferably a resist film. The procedure of the pattern forming method using the composition of the present invention is not particularly limited, but preferably includes the following steps: Step 1: forming a resist film on a substrate using the composition of the present invention; Step 2: exposing the resist film; Step 3: developing the exposed resist film using a developer. The procedure of each of the above steps will be described in detail below.

[0316] (Step 1: Resist Film Forming Step) Step 1 is a step of forming a resist film on a substrate using the composition of the present invention.

[0317] A method for forming a resist film on a substrate using the composition of the present invention includes, for example, applying the composition of the present invention to a substrate. It is preferable to filter the composition of the present invention before application, if necessary. The pore size of the filter is preferably 0.1 μm or less, more preferably 0.05 μm or less, and even more preferably 0.03 μm or less. The filter is preferably made of polytetrafluoroethylene, polyethylene, or nylon.

[0318] The composition of the present invention can be applied onto a substrate (e.g., silicon, silicon coated with silicon dioxide) such as those used in the manufacture of integrated circuit elements by an appropriate application method such as a spinner or coater. Spin application using a spinner is preferred. The rotation speed during spin application using a spinner is preferably 1,000 to 3,000 rpm (rotations per minute). After application of the composition of the present invention, the substrate may be dried to form a resist film. If necessary, various undercoating films (inorganic film, organic film, anti-reflective film) may be formed below the resist film.

[0319] An example of a drying method is a method of drying by heating. Heating can be performed by means provided in a normal exposure machine and / or developing machine, and may also be performed using a hot plate or the like. The heating temperature is preferably 80 to 150°C, more preferably 80 to 140°C, and even more preferably 80 to 130°C. The heating time is preferably 30 to 1,000 seconds, more preferably 60 to 800 seconds, and even more preferably 60 to 600 seconds.

[0320] The thickness of the resist film is not particularly limited, but is preferably 10 nm or more and 15 μm or less from the viewpoint of forming a finer pattern with higher precision. When EUV exposure is used, the thickness of the resist film is more preferably 10 to 100 nm, even more preferably 10 to 65 nm, and particularly preferably 15 to 50 nm. When ArF immersion exposure is used, the thickness of the resist film is more preferably 10 to 200 nm, even more preferably 10 to 120 nm, and particularly preferably 15 to 90 nm. When KrF exposure is used, the thickness of the resist film is more preferably 30 nm or more and 12 μm or less, and even more preferably 60 nm or more and 10 μm or less.

[0321] A top coat may be formed on the resist film using a top coat composition. It is preferable that the top coat composition does not mix with the resist film and can be uniformly applied to the resist film. The top coat is not particularly limited, and a conventionally known top coat can be formed by a conventionally known method. For example, a top coat can be formed based on the description in paragraphs

[0072] to

[0082] of JP 2014-059543 A. For example, a top coat containing a basic compound such as that described in JP 2013-61648 A is preferably formed on the resist film. Specific examples of basic compounds that may be contained in the top coat include the basic compounds that may be contained in the composition of the present invention. It is also preferable that the top coat contain a compound containing at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond.

[0322] (Step 2: Exposure Step) Step 2 is a step of exposing the resist film to light. Examples of exposure methods include irradiating the formed resist film with actinic rays or radiation through a predetermined mask. Examples of actinic rays or radiation include infrared light, visible light, ultraviolet light, far ultraviolet light, extreme ultraviolet light, X-rays, and electron beams. The actinic rays or radiation preferably have a wavelength of 250 nm or less, more preferably 220 nm or less, and particularly preferably far ultraviolet light with a wavelength of 1 to 200 nm. Specific examples of such radiation include KrF excimer laser (248 nm), ArF excimer laser (193 nm), and F ２ Excimer laser (157 nm), EUV (13.5 nm), X-ray, and electron beam.

[0323] After exposure, it is preferable to bake (heat) the film before developing. Baking promotes the reaction of the exposed areas, resulting in better sensitivity and pattern shape. The heating temperature is preferably 80 to 150°C, more preferably 80 to 140°C, and even more preferably 80 to 130°C. The heating time is preferably 10 to 1,000 seconds, more preferably 10 to 180 seconds, and even more preferably 30 to 120 seconds. Heating can be performed using means provided in a typical exposure machine and / or development machine, and may also be performed using a hot plate or the like. This process is also called post-exposure baking.

[0324] (Step 3: Development Step) Step 3 is a step of developing the exposed resist film using a developer to form a pattern. The developer may be an alkaline developer or a developer containing an organic solvent (hereinafter also referred to as an organic developer).

[0325] Examples of development methods include a method in which a substrate is immersed in a tank filled with a developer for a certain period of time (dip method), a method in which a developer is piled up on the surface of a substrate by surface tension and left to stand for a certain period of time for development (puddle method), a method in which a developer is sprayed onto the surface of the substrate (spray method), and a method in which a developer is continuously dispensed onto a substrate rotating at a constant speed while a developer dispense nozzle is scanned at a constant speed (dynamic dispense method). Furthermore, after the development step, a step of stopping development while replacing the solvent with another solvent may be carried out. The development time is not particularly limited as long as it is long enough to sufficiently dissolve the resin in the unexposed areas, and is preferably 10 to 300 seconds, more preferably 20 to 120 seconds. The temperature of the developer is preferably 0 to 50°C, more preferably 15 to 35°C.

[0326] The alkaline developer is preferably an aqueous alkaline solution containing an alkali. The type of alkaline aqueous solution is not particularly limited, but examples include aqueous alkaline solutions containing a quaternary ammonium salt, such as tetramethylammonium hydroxide, an inorganic alkali, a primary amine, a secondary amine, a tertiary amine, an alcohol amine, or a cyclic amine. Of these, the alkaline developer is preferably an aqueous solution of a quaternary ammonium salt, such as tetramethylammonium hydroxide (TMAH). Appropriate amounts of alcohols, surfactants, and the like may be added to the alkaline developer. The alkaline concentration of the alkaline developer is usually preferably 0.1 to 20% by mass. The pH of the alkaline developer is usually preferably 10.0 to 15.0.

[0327] The organic developer is preferably a developer containing at least one organic solvent selected from the group consisting of ketone-based solvents, ester-based solvents, alcohol-based solvents, amide-based solvents, ether-based solvents, and hydrocarbon-based solvents.

[0328] The above-mentioned solvents may be mixed in plural, or may be mixed with a solvent other than the above or water. The water content of the developer as a whole is preferably less than 50% by mass, more preferably less than 20% by mass, even more preferably less than 10% by mass, and particularly preferably substantially free of water. The content of the organic solvent in the organic developer is preferably 50% by mass or more and 100% by mass or less, more preferably 80% by mass or more and 100% by mass or less, even more preferably 90% by mass or more and 100% by mass or less, and particularly preferably 95% by mass or more and 100% by mass or less, based on the total amount of the developer.

[0329] (Other Steps) The pattern formation method preferably includes, after step 3, a step of cleaning with a rinse liquid.

[0330] The rinse liquid used in the rinse step after the development step using an alkaline developer can be, for example, pure water. A suitable amount of surfactant may be added to the pure water. A suitable amount of surfactant may be added to the rinse liquid.

[0331] The rinse liquid used in the rinse step after the development step using an organic developer is not particularly limited as long as it does not dissolve the pattern, and a solution containing a general organic solvent can be used. The rinse liquid is preferably a rinse liquid containing at least one organic solvent selected from the group consisting of hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents, and ether solvents.

[0332] The method for the rinsing step is not particularly limited, and examples include a method in which a rinsing solution is continuously discharged onto a substrate rotating at a constant speed (spin coating method), a method in which a substrate is immersed in a tank filled with the rinsing solution for a certain period of time (dipping method), and a method in which the rinsing solution is sprayed onto the substrate surface (spray method). The pattern formation method may also include a heating step (post-bake) after the rinsing step. This step removes the developer and rinsing solution remaining between and within the pattern by baking. This step also has the effect of annealing the resist pattern and improving the surface roughness of the pattern. The heating step after the rinsing step is typically performed at 40 to 250°C (preferably 90 to 200°C) for typically 10 seconds to 3 minutes (preferably 30 to 120 seconds).

[0333] Alternatively, the substrate may be etched using the formed pattern as a mask. That is, the substrate (or the underlayer film and the substrate) may be processed using the pattern formed in step 3 as a mask to form a pattern on the substrate. The method for processing the substrate (or the underlayer film and the substrate) is not particularly limited, but a method of forming a pattern on the substrate by dry etching the substrate (or the underlayer film and the substrate) using the pattern formed in step 3 as a mask is preferred. The dry etching is preferably oxygen plasma etching.

[0334] The composition of the present invention and various materials used in the pattern formation method (e.g., solvents, developers, rinse solutions, anti-reflective coating compositions, top coat compositions, etc.) preferably do not contain impurities such as metals. The content of impurities contained in these materials is preferably 1 mass ppm (parts per million) or less, more preferably 10 mass ppb (parts per billion) or less, even more preferably 100 mass ppt or less, particularly preferably 10 mass ppt or less, and most preferably 1 mass ppt or less. There is no particular lower limit, and 0 mass ppt or more is preferred. Here, examples of metal impurities include Na, K, Ca, Fe, Cu, Mg, Al, Li, Cr, Ni, Sn, Ag, As, Au, Ba, Cd, Co, Pb, Ti, V, W, and Zn.

[0335] Examples of methods for removing impurities such as metals from various materials include filtration using a filter. Details of filtration using a filter are described in paragraph

[0321] of WO 2020 / 004306.

[0336] Methods for reducing impurities such as metals contained in various materials include, for example, selecting raw materials with a low metal content as raw materials for the various materials, filtering the raw materials for the various materials, and performing distillation under conditions that minimize contamination as much as possible, for example by lining the inside of the apparatus with Teflon (registered trademark).

[0337] In addition to filter filtration, impurities may be removed using an adsorbent, or a combination of filter filtration and an adsorbent may be used. Known adsorbents can be used as the adsorbent, including inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon. In order to reduce impurities such as metals contained in the various materials, it is necessary to prevent the incorporation of metal impurities during the manufacturing process. Whether metal impurities have been sufficiently removed from the manufacturing equipment can be confirmed by measuring the content of metal components contained in the cleaning solution used to clean the manufacturing equipment. The content of metal components contained in the used cleaning solution is preferably 100 parts per trillion (ppt) by mass or less, more preferably 10 ppt by mass or less, and even more preferably 1 ppt by mass or less. There is no particular lower limit, and 0 ppt by mass or more is preferred.

[0338] A conductive compound may be added to an organic processing liquid such as a rinse solution to prevent breakdown of the chemical solution piping and various parts (filters, O-rings, tubes, etc.) due to static charging and subsequent electrostatic discharge. The conductive compound is not particularly limited, but examples include methanol. The amount added is not particularly limited, but in order to maintain favorable development or rinsing characteristics, it is preferably 10% by mass or less, more preferably 5% by mass or less. There is no particular lower limit, but 0.01% by mass or more is preferred. For the chemical solution piping, for example, stainless steel (SUS), or various piping coated with antistatically treated polyethylene, polypropylene, or fluororesin (such as polytetrafluoroethylene or perfluoroalkoxy resin), can be used. Similarly, for the filters and O-rings, antistatically treated polyethylene, polypropylene, or fluororesin (such as polytetrafluoroethylene or perfluoroalkoxy resin), can be used.

[0339] <Method for manufacturing an electronic device> The present invention also relates to a method for manufacturing an electronic device, including the above-mentioned pattern formation method, and an electronic device manufactured by this manufacturing method. A preferred embodiment of the electronic device of the present invention is one that is installed in electrical and electronic equipment (such as home appliances, office automation (OA), media-related equipment, optical equipment, and communication equipment).

[0340] The present invention will be described in more detail below with reference to the following examples. The materials, amounts used, ratios, processing details, and processing procedures shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be construed as being limited by the following examples.

[0341] The various components used in the resist compositions of the examples and comparative examples are shown below.

[0342] <Resin (A)> A-1 to A-31 were used as resin (A) (resin whose polarity increases under the action of acid). The structural formula and content (mol %) of each repeating unit contained in A-1 to A-31, as well as the weight average molecular weight (Mw) and dispersity (Mw / Mn) of A-1 to A-31 are shown below. The content of each repeating unit is the content ratio (molar ratio) of each repeating unit to all repeating units contained in each resin. The weight average molecular weight (Mw) and dispersity (Mw / Mn) of the resin were measured by GPC (carrier: tetrahydrofuran (THF)) (amounts converted into polystyrene). The content of the repeating unit was １３ Measurement was performed by C-NMR (nuclear magnetic resonance).

[0343]

[0344]

[0345]

[0346]

[0347]

[0348]

[0349]

[0350]

[0351] <Photoacid Generator> PAG-A to PAG-Z, PAG-AA to PAG-AC, and PAG-Xa were used as photoacid generators. PAG-A to PAG-Z and PAG-AA to PAG-AC are onium salts (B). PAG-Xa is not an onium salt (B).

[0352]

[0353]

[0354]

[0355]

[0356] The fluorine atom content of the photoacid generator is shown in Table 1. The fluorine atom content of the photoacid generator is the mass ratio of fluorine atoms to all atoms in the photoacid generator. The fluorine atom content (mass %) of the photoacid generator was calculated using the following formula: 100×19×[F] / M ｗＢ In the formula, [F] represents the number of fluorine atoms contained in the photoacid generator, and M ｗＢ represents the molecular weight of the photoacid generator.

[0357]

[0358] <Acid Diffusion Controller> D-1 to D-12 were used as the acid diffusion controller.

[0359]

[0360]

[0361] The fluorine atom content of the acid diffusion controller is shown in Table 2. The fluorine atom content was calculated by the method described above.

[0362]

[0363] <Additives> E-1 to E-13 were used as additives. E-1 to E-12 are hydrophobic resins, and E-13 is a surfactant. The structural formula and content (mol %) of each repeating unit contained in E-1 to E-12, as well as the weight average molecular weight (Mw) and dispersity (Mw / Mn) of E-1 to E-12 are shown below. The content of each repeating unit is the content ratio (molar ratio) of each repeating unit to all repeating units contained in each resin. The weight average molecular weight (Mw) and dispersity (Mw / Mn) of the resin were measured by GPC (carrier: tetrahydrofuran (THF)) (amounts converted into polystyrene). The content of the repeating unit was １３ Measurement was performed by C-NMR.

[0364]

[0365]

[0366]

[0367] The structure of E-13 is shown below.

[0368]

[0369] <Solvent> The solvents used are as follows: PGMEA: propylene glycol monomethyl ether acetate PGME: propylene glycol monomethyl ether GBL: γ-butyrolactone CyHx: cyclohexanone

[0370] (Examples 1 to 56, Comparative Examples 1 and 2) <Preparation of Resist Compositions> The components shown in Tables 3 and 4 were dissolved in the solvents shown in the tables to prepare solutions with a solids concentration of 3.2% by mass. This was then filtered through a polyethylene filter with a pore size of 0.03 μm to prepare resist compositions. The solids refer to all components other than the solvent. In the tables, the "Content (mass %)" column for each component indicates the content (mass %) of that component relative to the total solids in the resist composition. When two or more types of each component were used, the type and content of each component are separated by " / ". The order in which the types and contents separated by " / " are listed corresponds to each other. The tables also list the type and mass ratio of the solvents used. The order in which the solvent types and mass ratios are listed corresponds to each other.

[0371]

[0372]

[0373] <Coating of Resist Composition> An organic antireflective film ARC29SR (manufactured by Brewer) was coated on a silicon wafer and baked at 205°C for 60 seconds to form an antireflective film with a thickness of 95 nm. The resist compositions shown in Tables 5 and 6 were coated on top of the antireflective film and baked at 100°C for 60 seconds to form resist films with a thickness of 90 nm.

[0374] <ArF Exposure and Development> Using an ArF excimer laser immersion scanner (manufactured by ASML; XT1700i, NA 1.20), exposure was performed through a 6% halftone mask with a 1:1 line and space pattern with a line width of 60 nm. Ultrapure water was used as the immersion liquid. The exposed resist film was subjected to positive or negative development as follows. When a tetramethylammonium hydroxide aqueous solution (2.38% by mass) (also referred to as "TMAHaq") was used as the developer, a positive tone was obtained, and when n-butyl acetate (also referred to as "nBA") was used, a negative tone was obtained. Tables 5 and 6 show the developers used in each example and comparative example.

[0375] [Positive] The exposed resist film was baked at 95°C for 60 seconds, developed with an aqueous solution of tetramethylammonium hydroxide (2.38% by mass) for 30 seconds, rinsed with pure water for 30 seconds, and then spin-dried to obtain a positive pattern.

[0376] [Negative Tone] After the exposure, the resist film was heated at 95° C. for 60 seconds, developed with n-butyl acetate for 30 seconds, and then spin-dried to obtain a negative pattern.

[0377] <Performance Evaluation> [LWR (Line Width Roughness)] The exposure dose (optimum exposure dose) when resolving a 1:1 line and space pattern with a line width of 60 nm (unit: mJ / cm ２ When a pattern formed by the lithography technique was observed from above using a critical dimension scanning electron microscope (SEM (CG-4100, manufactured by Hitachi, Ltd.)), the line width was observed at 50 random locations, and the standard deviation (σ) was determined. The variation in line width was evaluated using 3σ, and the value of 3σ was taken as the LWR (nm). The smaller the LWR value, the better the LWR performance.

[0378] [Pattern shape] Exposure dose (optimum exposure dose) when resolving a 1:1 line and space pattern with a line width of 60 nm (unit: mJ / cm ２The cross-sectional shape of the pattern was observed using a scanning electron microscope (SEM (Hitachi, Ltd. S-4800)). When the inclination of the sidewall of the pattern (the angle between the wafer surface and the sidewall of the pattern, the size of the angle including the pattern) was 80° or more and 90° or less, it was evaluated as a "rectangular shape" and rated as A, when it was 70° or more and less than 80° it was evaluated as a "slightly tapered shape" and rated as B, and when it was less than 70° it was evaluated as a "tapered shape" and rated as C. A "tapered shape" and a "slightly tapered shape" are shapes in which the width of the line portion gradually increases from the top of the pattern to the bottom of the pattern. The pattern shape is preferably A or B, and more preferably A.

[0379] The results are shown in Tables 5 and 6.

[0380]

[0381]

[0382] (Examples 57 to 83, Comparative Examples 3 and 4) <Preparation of Resist Composition> The components shown in Table 7 were mixed to a solids concentration of 1.6% by mass. The resulting mixture was then filtered, in this order, first through a polyethylene filter with a pore size of 50 nm, then through a nylon filter with a pore size of 10 nm, and finally through a polyethylene filter with a pore size of 5 nm, to prepare a resist composition. The solids refer to all components other than the solvent. In the table, the "Content (mass %)" column for each component indicates the content (mass %) of that component relative to the total solids in the resist composition. The table also lists the type and mass ratio of the solvent used. The order in which the solvent type and mass ratio are listed corresponds to each other.

[0383]

[0384] <Coating of Resist Composition> An underlayer film-forming composition AL412 (manufactured by Brewer Science) was coated on a silicon wafer and baked at 205°C for 60 seconds to form an underlayer film with a thickness of 20 nm. A resist composition shown in Table 9 was coated on the underlayer film and baked at 100°C for 60 seconds to form a resist film with a thickness of 50 nm.

[0385] <EUV Exposure and Development> Using an EUV exposure device (Micro Exposure Tool, NA 0.3, Quadrupol, outer sigma 0.68, inner sigma 0.36, manufactured by Exitech), a pattern was irradiated onto the silicon wafer having the obtained resist film. A mask with a line size of 20 nm and a line:space ratio of 1:1 was used as a reticle. The exposed resist film was subjected to positive or negative development as follows. When a tetramethylammonium hydroxide aqueous solution (2.38% by mass) (also referred to as "TMAHaq") was used as the developer, a positive development was achieved, and when n-butyl acetate (also referred to as "nBA") was used, a negative development was achieved. Table 9 shows the developers used in each example and comparative example.

[0386] [Positive] The exposed resist film was baked at 90°C for 60 seconds, developed with an aqueous solution of tetramethylammonium hydroxide (2.38% by mass) for 30 seconds, rinsed with pure water for 30 seconds, and then spin-dried to obtain a positive pattern.

[0387] [Negative Tone] After the exposure, the resist film was heated at 90° C. for 60 seconds, developed with n-butyl acetate for 30 seconds, and then spin-dried to obtain a negative pattern.

[0388] In the above <EUV exposure and development>, good patterns can also be obtained using the developers listed in Table 8. G-1 to G-4 are mixtures of the first solvent and the second solvent, and G-5 consists of only the first solvent. The contents of the first solvent and the second solvent in Table 8 are the mass ratios of each solvent to the total amount of the developer.

[0389]

[0390] <Performance Evaluation> [LWR (Line Width Roughness)] The exposure dose (optimum exposure dose) when resolving a 1:1 line and space pattern with a line width of 20 nm (unit: mJ / cm ２When a pattern formed by the lithography technique was observed from above using a critical dimension scanning electron microscope (SEM (CG-4100, manufactured by Hitachi, Ltd.)), the line width was observed at 50 random locations, and the standard deviation (σ) was determined. The variation in line width was evaluated using 3σ, and the value of 3σ was taken as the LWR (nm). The smaller the LWR value, the better the LWR performance.

[0391] [Pattern shape] Exposure dose (optimum exposure dose) when resolving a 1:1 line and space pattern with a line width of 20 nm (unit: mJ / cm ２ The cross-sectional shape of the pattern formed by the ion beam splitter was observed using a scanning electron microscope (SEM (Hitachi, Ltd. S-4800)). When the inclination of the sidewall of the pattern was 80° or more and 90° or less, it was evaluated as a "rectangular shape" and rated as A, when it was 70° or more and less than 80°, it was evaluated as a "slightly tapered shape" and rated as B, and when it was less than 70°, it was evaluated as a "tapered shape" and rated as C. The pattern shape is preferably A or B, and more preferably A.

[0392] The results are shown in Table 9.

[0393]

[0394] (Examples 84 to 99, Comparative Examples 5 and 6) <Preparation of Resist Composition> The components shown in Table 10 were dissolved in the solvents shown in the table to prepare solutions with the solid content concentrations shown in the table. These solutions were then filtered through a polyethylene filter with a pore size of 0.03 μm to prepare resist compositions. The solid content refers to all components other than the solvent. In the table, the "Content (mass %)" column for each component indicates the content (mass %) of each component relative to the total solid content in the resist composition. The table also lists the type and mass ratio of the solvent used. The order in which the solvent type and mass ratio are listed corresponds to each other.

[0395]

[0396] <Application of Resist Composition> The resist composition prepared above was spin-coated onto a hexamethyldisilazane-treated silicon substrate (manufactured by Advanced Materials Technology Corp.) without providing an anti-reflective layer, at a rotation speed sufficient to achieve the target film thickness (the film thickness of the resist film shown in Table 11), and the coated substrate was then baked (pre-bake; PB) at a temperature of 80 to 150°C for 45 to 120 seconds to form a resist film.

[0397] <KrF Exposure and Development> The wafer on which the resist film was formed was subjected to pattern exposure through an exposure mask using a KrF excimer laser scanner (ASML, PAS5500 / 850C, wavelength 248 nm, NA 0.70) to form a 1:1 line and space pattern with a line width of 150 nm. More specifically, development was carried out as follows. The exposed resist film was subjected to positive or negative development as follows. When a tetramethylammonium hydroxide aqueous solution (2.38% by mass) (also referred to as "TMAHaq") was used as the developer, a positive development was achieved, and when n-butyl acetate (also referred to as "nBA") was used, a negative development was achieved. Table 11 shows the developers used in each example and comparative example.

[0398] [Positive] The exposed resist film was baked at 80 to 140°C for 45 to 120 seconds, then developed with an aqueous solution of tetramethylammonium hydroxide (2.38% by mass) for 30 to 60 seconds, rinsed with pure water for 30 seconds, and then spin-dried to obtain a positive pattern.

[0399] [Negative Tone] After the exposure, the resist film was heated at 95° C. for 60 seconds, developed with n-butyl acetate for 30 seconds, and then spin-dried to obtain a negative pattern.

[0400] <Performance Evaluation> [LWR (Line Width Roughness)] The exposure dose (optimum exposure dose) when resolving a 1:1 line and space pattern with a line width of 150 nm (unit: mJ / cm ２When a pattern formed by the lithography technique was observed from above using a critical dimension scanning electron microscope (SEM (CG-4100, manufactured by Hitachi, Ltd.)), the line width was observed at 50 random locations, and the standard deviation (σ) was determined. The variation in line width was evaluated using 3σ, and the value of 3σ was taken as the LWR (nm). The smaller the LWR value, the better the LWR performance.

[0401] [Pattern shape] Exposure dose (optimum exposure dose) when resolving a 1:1 line and space pattern with a line width of 150 nm (unit: mJ / cm ２ The cross-sectional shape of the pattern formed by the ion beam splitter was observed using a scanning electron microscope (SEM (Hitachi, Ltd. S-4800)). When the inclination of the sidewall of the pattern was 80° or more and 90° or less, it was evaluated as a "rectangular shape" and rated as A, when it was 70° or more and less than 80°, it was evaluated as a "slightly tapered shape" and rated as B, and when it was less than 70°, it was evaluated as a "tapered shape" and rated as C. The pattern shape is preferably A or B, and more preferably A.

[0402] The results are shown in Table 11.

[0403]

[0404] From the above results, it was found that the resist compositions used in the examples had excellent LWR performance and were capable of forming patterns with good pattern shapes.

[0405] The present invention can provide an actinic ray-sensitive or radiation-sensitive resin composition having excellent LWR performance and pattern shape. The present invention can also provide a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern formation method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.

[0406] Although the present invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the present invention. This application is based on a Japanese patent application (Patent Application No. 2024-100862) filed on June 21, 2024, the contents of which are incorporated herein by reference.

Claims

An actinic ray-sensitive or radiation-sensitive resin composition comprising a resin (A) whose polarity increases under the action of an acid, and an onium salt (B) represented by the following formula (1): In formula (1), Ra represents a hydrogen atom or a hydrocarbon group which may have a heteroatom, Rb represents a hydrogen atom or a substituent, Z ＋ represents an organic cation. Ra and Rb may be bonded to form a ring. However, when Ra represents a hydrocarbon group which may have a heteroatom, Ra is bonded to the carbonyl group via a carbon atom. When Rb does not contain a cyclic structure, Ra does not represent an unsubstituted methyl group or an unsubstituted ethyl group. Z ＋ The organic cation represented by may have a valence of one, two or more. 　 The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , wherein the onium salt (B) has a fluorine atom content of 10 mass % or less. 　 The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , wherein the onium salt (B) has a fluorine atom content of 0 mass %. 　 The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , wherein Rb in formula (1) contains a cyclic structure.

2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein Rb in formula (1) represents a substituent represented by formula (X): In formula (X), R Ｘ１ represents an organic group, L Ｘ１ represents a single bond or a divalent linking group. * represents the bonding position. R in the formula (X) Ｘ１ The actinic ray-sensitive or radiation-sensitive resin composition according to claim 5 , wherein represents an aliphatic hydrocarbon group having 5 or more carbon atoms which may have a hetero atom. 　 L in the formula (X) Ｘ１ The actinic ray-sensitive or radiation-sensitive resin composition according to claim 5, wherein contains —COO—. 　 A resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition according to any one of claims 1 to 7. 　 A pattern forming method, comprising: a step of forming a resist film on a substrate using the actinic ray-sensitive or radiation-sensitive resin composition according to any one of claims 1 to 7; a step of exposing the resist film; and a step of developing the exposed resist film using a developer. 　 A method for manufacturing an electronic device, comprising the pattern formation method according to claim 9.

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