Plasma equipment for treating exhaust gas of semiconductor manufacturing facility

Abstract

The present invention relates to plasma equipment for treating exhaust gas of a semiconductor manufacturing facility, which is equipment for treating exhaust gas discharged from a semiconductor process chamber through a chamber exhaust line by a vacuum pump, the equipment comprising: an exhaust line plasma reactor installed on the chamber exhaust line to generate plasma in the exhaust gas to remove a component that is contained in the exhaust gas and is to be removed; a remote plasma reactor for generating plasma to decompose remote plasma source gas so as to generate remote plasma including reactive active species; a common power supply device for simultaneously producing power required for the operation of the exhaust line plasma reactor and the remote plasma reactor; and a power distributor for distributing AC power produced by the common power supply device to simultaneously supply the AC power to the exhaust line plasma reactor and the remote plasma reactor.

Description

Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities

[0001] The present invention relates to semiconductor manufacturing equipment technology, and more specifically, to plasma equipment for treating exhaust gas discharged from a process chamber of a semiconductor manufacturing equipment.

[0002] Semiconductor devices are manufactured by repeatedly performing photolithography, etching, diffusion, and metal deposition processes on wafers in a semiconductor process chamber using various process gases. After the process is completed in the semiconductor process chamber, residual gas remains in the semiconductor process chamber. Because this residual gas contains toxic substances, it is discharged by a vacuum pump and purified by exhaust gas treatment equipment such as a scrubber. However, as the exhaust gas flows, powder is deposited in the vacuum pump and the exhaust pipe connecting the vacuum pump and the scrubber, reducing the fluidity of the exhaust gas and shortening the MTBF (Mean Time Between Failure) of the equipment.

[0003] Publication No. 10-2007-0024806 describes a technology for preventing solidification due to a drop in temperature of exhaust gas by installing a heating jacket in a vacuum pipe.

[0004] The purpose of the present invention is to provide a plasma treatment device capable of efficiently treating exhaust gas discharged from a process chamber in which a semiconductor manufacturing process using various process gases is performed in a semiconductor manufacturing facility.

[0005] In order to achieve the above object of the present invention, according to one aspect of the present invention, there is provided a plasma device for treating exhaust gas of a semiconductor manufacturing facility, the device comprising: an exhaust pipe plasma reactor installed on the chamber exhaust pipe to generate plasma in the exhaust gas and to remove a component to be removed contained in the exhaust gas by means of a vacuum pump; a remote plasma reactor that generates plasma to decompose a remote plasma source gas by means of plasma to generate a remote plasma containing a reactive species; a common power supply device that simultaneously produces AC power required for the operation of the exhaust pipe plasma reactor and the remote plasma reactor; and a power distributor that distributes the AC power produced by the common power supply device and supplies it to the exhaust pipe plasma reactor and the remote plasma reactor simultaneously, wherein the remote plasma is supplied between the semiconductor processing chamber and the vacuum pump on a flow line of the exhaust gas, and one of the exhaust pipe plasma reactor and the remote plasma reactor is an inductively coupled plasma reactor and the other is a capacitively coupled plasma reactor.

[0006] According to the present invention, all of the objects of the present invention described above can be achieved. Specifically, the plasma equipment for treating exhaust gas of a semiconductor manufacturing facility according to the present invention includes an exhaust pipe plasma reactor which is installed in a chamber exhaust pipe, which is a foreline, to generate plasma in the flow line of exhaust gas to remove a component to be removed, a remote plasma reactor which generates remote plasma supplied from the outside into the flow line of the exhaust line, a common power supply which simultaneously produces AC power required for the operation of the exhaust pipe plasma reactor and the remote plasma reactor, and a power distributor which distributes the AC power produced by the common power supply and supplies it to the exhaust pipe plasma reactor and the remote plasma reactor simultaneously, so that when the exhaust pipe plasma reactor and the remote plasma reactor are operated simultaneously, the power supplied to the exhaust pipe plasma reactor and the power supplied to the remote plasma reactor are appropriately distributed and supplied according to process conditions by the power distributor, thereby improving the overall exhaust gas treatment efficiency and the efficiency of removing powder components.

[0007] FIG. 1 is a drawing schematically illustrating the configuration of a semiconductor manufacturing facility in which a plasma device for treating exhaust gas according to a first embodiment of the present invention is installed.

[0008] FIG. 2 is a drawing schematically illustrating the configuration of a semiconductor manufacturing facility in which a plasma device for treating exhaust gas according to a second embodiment of the present invention is installed.

[0009] FIG. 3 is a drawing schematically illustrating the configuration of a semiconductor manufacturing facility in which a plasma device for treating exhaust gas according to a third embodiment of the present invention is installed.

[0010] FIG. 4 is a drawing schematically illustrating the configuration of a semiconductor manufacturing facility in which a plasma device for treating exhaust gas according to a fourth embodiment of the present invention is installed.

[0011] FIG. 5 is a drawing schematically illustrating the configuration of a semiconductor manufacturing facility in which a plasma device for treating exhaust gas according to a fifth embodiment of the present invention is installed.

[0012] Hereinafter, the configuration and operation of an embodiment of the present invention will be described in detail with reference to the drawings.

[0013] FIG. 1 is a block diagram schematically illustrating a configuration of a semiconductor manufacturing facility in which a plasma device for treating exhaust gas according to a first embodiment of the present invention is installed. Referring to FIG. 1, the semiconductor manufacturing facility (100) includes semiconductor manufacturing equipment (101) in which a semiconductor manufacturing process for manufacturing a semiconductor device is performed, gas purification equipment (103) for purifying gas discharged from the semiconductor manufacturing equipment (101), exhaust equipment (105) for discharging gas from the semiconductor manufacturing equipment (101) and causing it to flow to the gas purification equipment (103), and plasma device (110) for treating exhaust gas according to the first embodiment of the present invention for treating gas discharged from the semiconductor manufacturing equipment (101).

[0014] Semiconductor manufacturing equipment (101) performs a semiconductor manufacturing process to manufacture semiconductor devices. The semiconductor manufacturing equipment (101) is equipped with a semiconductor process chamber (102) in which a semiconductor manufacturing process using various process gases is performed. Although not shown, the semiconductor manufacturing equipment (101) further includes a process gas supply unit that supplies various types of process gases required for the semiconductor process chamber (102).

[0015] The semiconductor process chamber (102) includes all types of semiconductor process chambers commonly used to manufacture semiconductor devices in the field of semiconductor manufacturing equipment technology. The residual gas generated in the semiconductor process chamber (102) is discharged to the outside by the exhaust equipment (105), processed by the plasma equipment (110) for exhaust gas treatment, and then purified by the gas purification equipment (103).

[0016] In this embodiment, the semiconductor process performed in the semiconductor process chamber (102) may be a SiO2 process for forming a silicon oxide film on a substrate, a TiO2 process for forming a titanium dioxide film on a substrate, a ZrO2 process for forming a zirconia film on a substrate, a HfO2 process for forming a hafnium oxide film on a substrate, a Nb2O5 process for forming a niobium pentoxide film on a substrate, or a Ta2O5 process for forming a tantalum pentoxide film on a substrate.

[0017] In the SiO2 process, a silicon dioxide (SiO2) film is formed on a substrate. In this embodiment, it is described that a process gas containing Si(OC2H5)4 (TEOS: Tetraethyl Orthosilicate) is used as a precursor to generate silicon dioxide (SiO2) in the SiO2 process. After the SiO2 process is performed, the exhaust gas discharged from the semiconductor process chamber (102) contains SiO2 (silicon dioxide) powder, unreacted TEOS, and oxygen. The TEOS and oxygen contained in the exhaust gas of the SiO2 process may react to additionally generate SiO2 powder in the exhaust gas. If the SiO2 powder contained in the exhaust gas accumulates in the exhaust equipment (105), the fluidity of the exhaust gas deteriorates.

[0018] In the TiO2 process, a titanium dioxide (TiO2) film is formed on the substrate. In this embodiment, it is explained that a process gas containing Ti(OCH2CH3)4 (titanium tetraetoxide) as a precursor is used to generate titanium dioxide (TiO2) in the TiO2 process. After the TiO2 process is performed, the exhaust gas discharged from the semiconductor process chamber (102) contains titanium dioxide (TiO2) powder, unreacted Ti(OCH2CH3)4, and oxygen. Ti(OCH2CH3)4 contained in the exhaust gas of the TiO2 process may react with oxygen to additionally generate TiO2 powder in the exhaust gas. If the TiO2 powder contained in the exhaust gas accumulates in the exhaust equipment (105), the fluidity of the exhaust gas deteriorates.

[0019] In the ZrO2 process, a zirconia (ZrO2) film is formed on a substrate. In this embodiment, it is described that a process gas containing (C5H5)Zr(N(CH3)2)3 is used as a precursor to produce zirconia (ZrO2) in the ZrO2 process. After the ZrO2 process is performed, the exhaust gas discharged from the semiconductor process chamber (102) contains zirconia (ZrO2) powder, unreacted (C5H5)Zr(N(CH3)2)3, and oxygen. (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas of the ZrO2 process may react with oxygen to additionally produce ZrO2 powder in the exhaust gas. If the ZrO2 powder contained in the exhaust gas accumulates in the exhaust equipment (105), the fluidity of the exhaust gas deteriorates.

[0020] In the HfO2 process, a hafnium oxide (HfO2) film is formed on a substrate. In this embodiment, it is described that a process gas containing (C5H5)Hf(N(CH3)2)3 is used as a precursor to generate hafnium oxide (HfO2) in the HfO2 process. After the HfO2 process is performed, the exhaust gas discharged from the semiconductor process chamber (102) contains hafnium oxide (HfO2) powder, unreacted (C5H5)Hf(N(CH3)2)3, and oxygen. The (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas of the HfO2 process may react with oxygen to additionally generate HfO2 powder in the exhaust gas. If the HfO2 powder contained in the exhaust gas accumulates in the exhaust equipment (105), the fluidity of the exhaust gas deteriorates.

[0021] In the Nb2O5 process, a niobium pentoxide (Nb2O5) film is formed on the substrate. In this embodiment, it is described that a process gas containing (C5H5)Nb(N(CH3)2)3 is used as a precursor to generate niobium pentoxide (Nb2O5) in the Nb2O5 process. After the Nb2O5 process is performed, the exhaust gas discharged from the semiconductor process chamber (102) contains niobium pentoxide (Nb2O5) powder, unreacted (C5H5)Nb(N(CH3)2)3, and oxygen. The (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas of the Nb2O5 process may react with oxygen to additionally generate Nb2O5 powder in the exhaust gas. If the Nb2O5 powder contained in the exhaust gas accumulates in the exhaust equipment (105), the fluidity of the exhaust gas deteriorates.

[0022] In the Ta2O5 process, a tantalum pentoxide (Ta2O5) film is formed on the substrate. In this embodiment, it is described that a process gas containing Ta(OC2H5)5 as a precursor is used to produce tantalum pentoxide (Ta2O5) in the Ta2O5 process. After the Ta2O5 process is performed, the exhaust gas discharged from the semiconductor process chamber (102) contains tantalum pentoxide (Ta2O5) powder, unreacted Ta(OC2H5)5, and oxygen. Ta(OC2H5)5 and oxygen included in the exhaust gas of the Ta2O5 process may react to additionally produce Ta2O5 powder in the exhaust gas. If the Ta2O5 powder included in the exhaust gas accumulates in the exhaust equipment (105), the fluidity of the exhaust gas deteriorates.

[0023] The gas purification equipment (103) processes and purifies harmful components contained in the exhaust gas discharged from the semiconductor process chamber (102) by the exhaust equipment (105). The gas purification equipment (103) includes a scrubber (104) that purifies the exhaust gas. The scrubber (104) includes all types of scrubbers commonly used to purify exhaust gas in the field of semiconductor manufacturing equipment technology.

[0024] The exhaust equipment (105) exhausts residual gas generated after processing in the semiconductor process chamber (102) from the semiconductor process chamber (102). The exhaust equipment (105) is equipped with a vacuum pump (106), a chamber exhaust pipe (107) connecting the semiconductor process chamber (102) and the vacuum pump (106), and a pump exhaust pipe (108) extending downstream from the vacuum pump (106).

[0025] The vacuum pump (106) forms a negative pressure on the semiconductor process chamber (102) side through the chamber exhaust pipe (107) in order to discharge residual gas from the semiconductor process chamber (102). Since the vacuum pump (106) includes a configuration of a vacuum pump commonly used for gas discharge in the field of semiconductor manufacturing equipment technology, a detailed description thereof will be omitted. Powder may accumulate in the vacuum pump (106), which may deteriorate the performance of the vacuum pump (106). According to the plasma equipment (110) for exhaust gas treatment of the present invention, powder is prevented from accumulating in the vacuum pump (106), thereby extending the MTBF of the vacuum pump (106).

[0026] The chamber exhaust pipe (107) connects the exhaust port of the semiconductor process chamber (102) and the suction port of the vacuum pump (106) between the semiconductor process chamber (102) and the vacuum pump (106). The residual gas of the semiconductor process chamber (102) is discharged as exhaust gas through the chamber exhaust pipe (107) by the negative pressure formed by the vacuum pump (106). While the exhaust gas flows through the chamber exhaust pipe (107), it is treated by the plasma equipment (110) for treating the exhaust gas.

[0027] A pump exhaust pipe (108) extends downstream from a vacuum pump (106). The pump exhaust pipe (108) is connected to the discharge port of the vacuum pump (106) so that exhaust gas discharged from the vacuum pump (106) flows. A scrubber (104) is connected to the downstream end of the pump exhaust pipe (108) so that exhaust gas discharged from the vacuum pump (106) flows into the scrubber (103) through the pump exhaust pipe (108).

[0028] Plasma equipment (110) for exhaust gas treatment uses plasma to treat exhaust gas discharged from a semiconductor process chamber (102), thereby decomposing harmful components contained in the exhaust gas and gasifying powder to prevent deterioration of the fluidity of the exhaust gas. Plasma equipment (110) for treating exhaust gas comprises an exhaust pipe plasma reactor (120) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (102), an exhaust pipe plasma source gas supplier (130) that supplies plasma source gas to the exhaust pipe plasma reactor (120), a powder collection trap (140) that is installed on the chamber exhaust pipe (107) to collect powder, a remote plasma reactor (150) that uses plasma to generate reactive species supplied to the powder collection trap (140), a remote plasma source gas supplier (160) that supplies plasma source gas to the remote plasma reactor (150), a common power supply (170) that produces power required for the operation of both the exhaust pipe plasma reactor (120) and the remote plasma reactor (150), and power that distributes power produced by the common power supply (170) and supplies it to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150). It comprises a distributor (180), a controller (190) for controlling the operation of the power distributor (180), an exhaust pipe plasma impedance matching unit (195) for matching the impedance between the power distributor (180) and the exhaust pipe plasma reactor (120), and a remote plasma impedance matching unit (198) for matching the impedance between the power distributor (180) and the remote plasma reactor (150).

[0029] The exhaust pipe plasma reactor (120) is installed on the chamber exhaust pipe (107) to generate a plasma reaction for the exhaust gas discharged from the semiconductor process chamber (102). The exhaust pipe plasma reactor (120) basically performs the function of primarily removing the target component contained in the exhaust gas discharged from the semiconductor process chamber (102). A stabilized powder is generated in the exhaust pipe plasma reactor (120). In the present embodiment, the exhaust pipe plasma reactor (120) is an inductively coupled plasma reactor that uses inductively coupled plasma (ICP). Since an inductively coupled plasma reactor having a conventional configuration (for example, a plasma reactor described in Patent No. 10-2265878) can be used as the exhaust pipe plasma reactor (120), a detailed description thereof is omitted herein. The exhaust pipe plasma reactor (120) decomposes NF3 gas or O2 gas, which is a source gas supplied from the exhaust pipe plasma source gas supplier (130), using plasma to generate excited fluorine atoms (F), which are active species for the reaction. * ) or excited oxygen atoms (O * ) is created.

[0030] The exhaust pipe plasma source gas supplier (130) stores the exhaust pipe plasma source gas, which is the source gas of the reactive species generated by the plasma in the exhaust pipe plasma reactor (120), and supplies the stored exhaust pipe plasma source gas to the exhaust pipe plasma reactor (120). In the present embodiment, the exhaust pipe plasma source gas supplier (130) is described as supplying nitrogen trifluoride (NF3) or oxygen (O2) as the exhaust pipe plasma source gas to the exhaust pipe plasma reactor (120). In the embodiment of FIG. 1, the exhaust pipe plasma source gas supplier (130) may not be provided, and this also falls within the scope of the present invention.

[0031] The powder collection trap (140) is installed downstream of the exhaust pipe plasma reactor (120) on the chamber exhaust pipe (107) to collect powder contained in the exhaust gas discharged from the exhaust pipe plasma reactor (120). The powder collection trap (140) may be a commonly used one (for example, a particle collection device described in Korean Patent No. 10-1480237), and thus a detailed description thereof will be omitted. The powder collected in the powder collection trap (140) reacts with the reactive species generated in the remote plasma reactor (150) and is gasified. The powder collection trap (140) may be equipped with a cooling device.

[0032] The remote plasma reactor (150) generates a remote plasma containing reactive species by decomposing a remote plasma source gas supplied from a remote plasma source gas supplier (160) using plasma. The components to be removed that are not removed in the exhaust pipe plasma reactor (120) can be additionally removed by the remote plasma containing the reactive species generated in the remote plasma reactor (150). The remote plasma gas containing the reactive species generated in the remote plasma reactor (150) is supplied to the powder collection trap (140). In the present embodiment, the remote plasma reactor (150) generates reactive fluorine atoms (F ) as reactive species using plasma. * ) or excited oxygen atoms (O ) which are reactive oxygen * ) is generated. In this example, the fluorine atom (F * ) is described as being generated by decomposition of nitrogen trifluoride (NF3), a source gas supplied from a remote plasma source gas supplier (160), by plasma in a remote plasma reactor (150). In this embodiment, the excited oxygen atoms (O *) is described as being generated by decomposing oxygen (O2), which is a source gas supplied from a remote plasma source gas supplier (160), by plasma in a remote plasma reactor (150). In this embodiment, the remote plasma reactor (150) is described as being combined with a powder collection trap (140) to form an integral body, but the present invention is not limited thereto. The remote plasma reactor (150) may be communicated with the powder collection trap (140) through a pipe, which also falls within the scope of the present invention. In this embodiment, the remote plasma reactor (150) is a capacitively coupled plasma reactor that uses capacitively coupled plasma (CCP). Since a capacitively coupled plasma reactor having a conventional configuration (for example, a plasma reactor described in Patent No. 10-2040823) can be used as the remote plasma reactor (150), a detailed description thereof is omitted here.

[0033] The remote plasma source gas supplier (160) stores remote plasma source gas, which is a source gas of reactive species generated by plasma in the remote plasma reactor (150), and supplies the stored remote plasma source gas to the remote plasma reactor (160). In this embodiment, the remote plasma gas supplier (160) is described as supplying nitrogen trifluoride (NF3) or oxygen (O2) as the remote plasma source gas to the remote plasma reactor (150).

[0034] The common power supply (170) produces AC power required for inductively coupled plasma generation in the exhaust pipe plasma reactor (120) and capacitively coupled plasma generation in the remote plasma reactor (150). The AC power produced in the common power supply (170) is distributed through the power distributor (180) and supplied simultaneously to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150). In this embodiment, the AC power produced by the common power supply (170) is described as being radio frequency (RF) power, which is a high frequency.

[0035] The power distributor (180) distributes high-frequency alternating current power produced from the common power supply (170) and supplies it to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150), respectively, so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously. The power distributor (180) is controlled by the controller (190), so that the ratio of the power supplied to the exhaust pipe plasma reactor (120) and the power supplied to the remote plasma reactor (150) can be adjusted.

[0036] The controller (190) controls the operation of the power distributor (180). The operation of the power distributor (180) is controlled by the controller (190), so that the ratio of the power supplied to the exhaust pipe plasma reactor (120) from the AC power produced by the common power supply (170) and the power supplied to the remote plasma reactor (150) can be adjusted.

[0037] The exhaust pipe plasma impedance matching unit (195) matches the impedance between the power distributor (180) and the exhaust pipe plasma reactor (120).

[0038] The remote plasma impedance matching unit (198) matches the impedance between the power distributor (180) and the remote plasma reactor (150).

[0039] In the above embodiment, the exhaust pipe plasma reactor (120) is described as an inductively coupled plasma reactor and the remote plasma reactor (150) is a capacitively coupled plasma reactor. However, the exhaust pipe plasma reactor (120) may be a capacitively coupled plasma reactor and the remote plasma reactor (150) may be an inductively coupled plasma reactor, and this also falls within the scope of the present invention.

[0040] Hereinafter, the operation of the plasma equipment (110) for exhaust gas treatment according to various processes performed in the process chamber (102) will be described in detail.

[0041] First, the operation of the plasma equipment (110) for treating exhaust gas when the SiO2 process using a process gas containing a Si-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (102), exhaust gas containing SiO2 powder, unreacted TEOS, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0042] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted TEOS contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). *) reacts with the exhaust pipe plasma reactor (120) to produce SiO2, which is a stabilized powder. The SiO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the SiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and gasify to form SiF4.

[0043] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), the SiO2 powder is excited by fluorine atoms (F * ) reacts with and gasifies to form SiF4. In addition, the remote plasma reactor (150) decomposes oxygen supplied by the remote plasma source gas supplier (160) to generate excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), unreacted TEOS contained in the exhaust gas is excited to oxygen atoms (O * ) can react with SiO2 powder to produce SiO2 powder, which can be captured in the powder collection trap (140).

[0044] Next, the operation of the plasma equipment (110) for exhaust gas treatment when the TiO2 process using a process gas containing a Ti-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (102), exhaust gas containing TiO2 powder, unreacted Ti(OCH2CH3)4, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0045] The action in the exhaust pipe plasma reactor (120) is as follows. Unreacted Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce TiO2, which is a stabilized powder. The TiO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the TiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and gasify to form TiF4.

[0046] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), the TiO2 powder is excited by fluorine atoms (F * ) reacts with the gas to form TiF4. In addition, the remote plasma reactor (150) decomposes the oxygen supplied by the remote plasma source gas supplier (160) to form excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), unreacted Ti(OCH2CH3)4 contained in the exhaust gas is excited to oxygen atoms (O * ) can react with TiO2 powder to produce TiO2 powder, which can be captured in a powder collection trap (140).

[0047] Next, the operation of the plasma equipment (110) for exhaust gas treatment when the ZrO2 process is performed using a process gas containing a Zr-containing precursor in the process chamber (102) is described as follows. In this embodiment, it is described that (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (102), the exhaust gas containing ZrO2 powder, unreacted (C5H5)Zr(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0048] The action in the exhaust pipe plasma reactor (120) is as follows. Unreacted (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce ZrO2, which is a stabilized powder. The ZrO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the ZrO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and be gasified to form ZrF4.

[0049] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), the ZrO2 powder is excited by fluorine atoms (F * ) reacts with and gasifies to form ZrF4. In addition, the remote plasma reactor (150) decomposes oxygen supplied by the remote plasma source gas supplier (160) to generate excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), unreacted (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas is excited to oxygen atoms (O * ) to produce ZrO2 powder, which can be captured in a powder collection trap (140).

[0050] Next, the operation of the plasma equipment (110) for exhaust gas treatment when the HfO2 process using a process gas containing a Hf-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it is described that (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (102), the exhaust gas containing HfO2 powder, unreacted (C5H5)Hf(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0051] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce HfO2, which is a stabilized powder. The HfO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the HfO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and be gasified to form HfF4.

[0052] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), the HfO2 powder is excited by fluorine atoms (F * ) reacts with and is gasified to form HfF4. In addition, the remote plasma reactor (150) decomposes the oxygen supplied by the remote plasma source gas supplier (160) to generate excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), unreacted (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas is excited to oxygen atoms (O * ) to produce HfO2 powder, which can be captured in a powder collection trap (140).

[0053] Next, the operation of the plasma equipment (110) for exhaust gas treatment when the Nb2O5 process is performed using a process gas containing a Nb-containing precursor in the process chamber (102) is described as follows. In this embodiment, it is described that (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (102), exhaust gas containing Nb2O5 powder, unreacted (C5H5)Nb(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0054] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the Nb2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and gasify to form NbF5.

[0055] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), the Nb2O5 powder is excited by the fluorine atoms (F * ) reacts with and gasifies to form NbF5. In addition, the remote plasma reactor (150) decomposes the oxygen supplied by the remote plasma source gas supplier (160) to generate excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), unreacted (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas is excited to oxygen atoms (O * ) to produce Nb2O5 powder, which can be captured in a powder collection trap (140).

[0056] Next, the operation of the plasma equipment (110) for treating exhaust gas when the Ta2O5 process using a process gas containing a Ta-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (102), the exhaust gas containing Ta2O5 powder, unreacted Ta(OC2H5)5, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), the high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0057] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the Ta2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and be gasified to form TaF5.

[0058] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), Ta2O5 powder is excited by fluorine atoms (F * ) reacts with and gasifies to form TaF5. In addition, the remote plasma reactor (150) decomposes oxygen supplied by the remote plasma source gas supplier (160) to generate excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied to the powder collection trap (140). In the powder collection trap (140), unreacted Ta(OC2H5)5 contained in the exhaust gas is excited to oxygen atoms (O * ) to produce Ta2O5 powder, which can be captured in a powder collection trap (140).

[0059] FIG. 2 is a block diagram schematically illustrating a configuration of a semiconductor manufacturing facility in which a plasma device for treating exhaust gas according to a second embodiment of the present invention is installed. Referring to FIG. 2, the semiconductor manufacturing facility (200) includes a semiconductor manufacturing facility (101) in which a semiconductor manufacturing process for manufacturing a semiconductor device is performed, a gas purification facility (103) for purifying gas discharged from the semiconductor manufacturing facility (101), an exhaust facility (105) for discharging gas from the semiconductor manufacturing facility (101) and causing it to flow to the gas purification facility (103), and a plasma device (210) for treating exhaust gas according to the second embodiment of the present invention for treating gas discharged from the semiconductor manufacturing facility (101). Except for the plasma device (210) for treating exhaust gas in the semiconductor manufacturing facility (200), the remaining configurations are substantially the same as those of the semiconductor manufacturing facility (100) illustrated in FIG. 1.

[0060] Plasma equipment (210) for treating exhaust gas comprises an exhaust pipe plasma reactor (120) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (102), an exhaust pipe plasma source gas supplier (130) that supplies plasma source gas to the exhaust pipe plasma reactor (120), a cooler (240) installed on the chamber exhaust pipe (107), a remote plasma reactor (150) that uses plasma to generate reactive species supplied to the chamber exhaust pipe (107), a remote plasma source gas supplier (160) that supplies gas to the remote plasma reactor (150), a common power supply (170) that produces power required for the operation of both the exhaust pipe plasma reactor (120) and the remote plasma reactor (150), a power distributor (180) that distributes power produced by the common power supply (170) and supplies it to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150), and a power It comprises a controller (190) that controls the operation of a distributor (180), an exhaust pipe plasma impedance matching unit (195) that matches the impedance between the power distributor (180) and an exhaust pipe plasma reactor (120), and a remote plasma impedance matching unit (198) that matches the impedance between the power distributor (180) and a remote plasma reactor (150).

[0061] The cooler (240) is installed downstream from the exhaust pipe plasma reactor (120) on the chamber exhaust pipe (107) to lower the temperature of the exhaust gas. The cooler (240) prevents damage to the equipment due to overheating. In this embodiment, the cooler (240) is described as using a water-cooled type using cooling water, but alternatively, an air-cooled type may be used, which also falls within the scope of the present invention.

[0062] The reactive species generated in the remote plasma reactor (150) are directly introduced into the section between the exhaust plasma reactor (120) and the cooler (240) through the chamber exhaust pipe (107).

[0063] Except for the location where the reactive species generated in the cooler (240) and the remote plasma reactor (150) are supplied in the plasma equipment (210) for exhaust gas treatment, the remaining configuration is the same as that of the plasma equipment (110) for exhaust gas treatment of the embodiment illustrated in FIG. 1.

[0064] In the embodiment of FIG. 2, the exhaust pipe plasma source gas supply (130) may not be provided, and this also falls within the scope of the present invention.

[0065] Hereinafter, the operation of the plasma equipment (210) for exhaust gas treatment according to various processes performed in the process chamber (102) will be described in detail.

[0066] First, the operation of the plasma equipment (210) for treating exhaust gas when the SiO2 process using a process gas containing a Si-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (102), exhaust gas containing SiO2 powder, unreacted TEOS, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0067] The operation in the exhaust pipe plasma reactor (120) is as follows. The SiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with and gasifies to form SiF4.

[0068] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the exhaust pipe plasma reactor (120) and the cooler (240). The SiO2 powder contained in the exhaust gas is excited fluorine atoms (F) generated and supplied from the remote plasma reactor (150). * ) reacts with and gasifies to form SiF4.

[0069] Next, the operation of the plasma equipment (210) for treating exhaust gas when the TiO2 process using a process gas containing a Ti-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (102), exhaust gas containing TiO2 powder, unreacted Ti(OCH2CH3)4, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0070] The operation in the exhaust pipe plasma reactor (120) is as follows. TiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130).* ) reacts with and gasifies to form TiF4.

[0071] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the exhaust pipe plasma reactor (120) and the cooler (240). The TiO2 powder contained in the exhaust gas is excited fluorine atoms (F) generated and supplied from the remote plasma reactor (150). * ) reacts with and gasifies to form TiF4.

[0072] Next, the operation of the plasma equipment (210) for exhaust gas treatment when the ZrO2 process is performed using a process gas containing a Zr-containing precursor in the process chamber (102) is described as follows. In this embodiment, it is described that (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (102), the exhaust gas containing ZrO2 powder, unreacted (C5H5)Zr(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0073] The operation in the exhaust pipe plasma reactor (120) is as follows. ZrO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with and gasifies to form ZrF4.

[0074] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the exhaust pipe plasma reactor (120) and the cooler (240). The ZrO2 powder contained in the exhaust gas is excited fluorine atoms (F) generated and supplied from the remote plasma reactor (150). * ) reacts with and gasifies to form ZrF4.

[0075] Next, the operation of the plasma equipment (210) for exhaust gas treatment when the HfO2 process using a process gas containing a Hf-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it is described that (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (102), the exhaust gas containing HfO2 powder, unreacted (C5H5)Hf(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0076] The operation in the exhaust pipe plasma reactor (120) is as follows. HfO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with and gasifies to form HfF4.

[0077] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the exhaust pipe plasma reactor (120) and the cooler (240). The HfO2 powder contained in the exhaust gas is excited fluorine atoms (F) generated and supplied from the remote plasma reactor (150). *) reacts with and gasifies to form HfF4.

[0078] Next, the operation of the plasma equipment (210) for exhaust gas treatment when the Nb2O5 process is performed using a process gas containing a Nb-containing precursor in the process chamber (102) is described as follows. In this embodiment, it is described that (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (102), exhaust gas containing Nb2O5 powder, unreacted (C5H5)Nb(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0079] The operation in the exhaust pipe plasma reactor (120) is as follows. The Nb2O5 powder contained in the exhaust gas discharged from the conductor process chamber (102) is excited by fluorine atoms (F) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with and gasifies to form NbF5.

[0080] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) *) is supplied from the chamber exhaust pipe (107) to the section between the exhaust pipe plasma reactor (120) and the cooler (240). The Nb2O5 powder contained in the exhaust gas is excited fluorine atoms (F) generated and supplied from the remote plasma reactor (150). * ) reacts with and gasifies to form NbF5.

[0081] Next, the operation of the plasma equipment (210) for exhaust gas treatment when the Ta2O5 process using a process gas containing a Ta-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (102), the exhaust gas containing Ta2O5 powder, unreacted Ta(OC2H5)5, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), the high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0082] The operation in the exhaust pipe plasma reactor (120) is as follows. Ta2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) generated by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with and gasifies to form TaF5.

[0083] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F *) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the exhaust pipe plasma reactor (120) and the cooler (240). The Ta2O5 powder contained in the exhaust gas is excited fluorine atoms (F) generated and supplied from the remote plasma reactor (150). * ) reacts with and gasifies to form TaF5.

[0084] FIG. 3 is a block diagram schematically illustrating a configuration of a semiconductor manufacturing facility in which a plasma device for treating exhaust gas according to a third embodiment of the present invention is installed. Referring to FIG. 3, the semiconductor manufacturing facility (300) includes a semiconductor manufacturing facility (101) in which a semiconductor manufacturing process for manufacturing a semiconductor device is performed, a gas purification facility (103) for purifying gas discharged from the semiconductor manufacturing facility (101), an exhaust facility (105) for discharging gas from the semiconductor manufacturing facility (101) and causing it to flow to the gas purification facility (103), and a plasma device (310) for treating exhaust gas according to the third embodiment of the present invention for treating gas discharged from the semiconductor manufacturing facility (101). Except for the plasma device (310) for treating exhaust gas in the semiconductor manufacturing facility (300), the remaining configurations are substantially the same as those of the semiconductor manufacturing facility (200) illustrated in FIG. 2.

[0085] Plasma equipment (310) for treating exhaust gas comprises an exhaust pipe plasma reactor (120) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (102), an exhaust pipe plasma source gas supplier (130) that supplies plasma source gas to the exhaust pipe plasma reactor (120), a remote plasma reactor (150) that generates reactive species supplied to the chamber exhaust pipe (107) using plasma, a remote plasma source gas supplier (160) that supplies gas to the remote plasma reactor (150), a common power supply (170) that produces power required for the operation of both the exhaust pipe plasma reactor (120) and the remote plasma reactor (150), a power distributor (180) that distributes power produced by the common power supply (170) and supplies it to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150), a controller (190) that controls the operation of the power distributor (180), and a power It is provided with an exhaust pipe plasma impedance matching unit (195) that matches the impedance between the distributor (180) and the exhaust pipe plasma reactor (120), and a remote plasma impedance matching unit (198) that matches the impedance between the power distributor (180) and the remote plasma reactor (150). The exhaust gas pretreatment equipment (310) is configured by excluding the cooler (248) from the exhaust gas treatment plasma equipment (210) illustrated in FIG. 2, and since cooling is not required compared to the exhaust gas treatment plasma equipment (210) illustrated in FIG. 2, energy consumption efficiency is improved in the operation of the exhaust gas treatment plasma equipment (310). The operation of the exhaust gas treatment plasma equipment (310) is substantially the same as the operation of the exhaust gas treatment plasma equipment (210) described in the embodiment of FIG. 2. In the embodiment of FIG. 3, the exhaust pipe plasma source gas supplier (130) may not be provided, and this also falls within the scope of the present invention.

[0086] FIG. 4 is a block diagram schematically illustrating a configuration of a semiconductor manufacturing facility in which a plasma device for treating exhaust gas according to a fourth embodiment of the present invention is installed. Referring to FIG. 4, the semiconductor manufacturing facility (400) includes a semiconductor manufacturing facility (101) in which a semiconductor manufacturing process for manufacturing a semiconductor device is performed, a gas purification facility (103) for purifying gas discharged from the semiconductor manufacturing facility (101), an exhaust facility (105) for discharging gas from the semiconductor manufacturing facility (101) and causing it to flow to the gas purification facility (103), and a plasma device (410) for treating exhaust gas according to the fourth embodiment of the present invention for treating gas discharged from the semiconductor manufacturing facility (101). Except for the plasma device (410) for treating exhaust gas in the semiconductor manufacturing facility (400), the remaining configuration is substantially the same as that of the semiconductor manufacturing facility (100) illustrated in FIG. 1.

[0087] Plasma equipment (410) for treating exhaust gas comprises an exhaust pipe plasma reactor (120) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (102), an exhaust pipe plasma source gas supplier (130) that supplies plasma source gas to the exhaust pipe plasma reactor (120), a powder collection trap (140) that is installed on the chamber exhaust pipe (107) and collects powder, a remote plasma reactor (150) that uses plasma to generate reactive species supplied to the chamber exhaust pipe (107), a remote plasma source gas supplier (160) that supplies gas to the remote plasma reactor (150), a common power supply (170) that produces power required for the operation of both the exhaust pipe plasma reactor (120) and the remote plasma reactor (150), and power that distributes power produced by the common power supply (170) and supplies it to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150). It comprises a distributor (180), a controller (190) for controlling the operation of the power distributor (180), an exhaust pipe plasma impedance matching unit (195) for matching the impedance between the power distributor (180) and the exhaust pipe plasma reactor (120), and a remote plasma impedance matching unit (198) for matching the impedance between the power distributor (180) and the remote plasma reactor (150).

[0088] The reactive species generated in the remote plasma reactor (150) are directly introduced into the section between the powder collection trap (140) and the vacuum pump (106) from the chamber exhaust pipe (107).

[0089] Except for the location where the reactive active species generated in the remote plasma reactor (150) is supplied to the plasma equipment (410) for exhaust gas treatment, the remaining configuration is the same as that of the plasma equipment (110) for exhaust gas treatment of the embodiment illustrated in FIG. 1.

[0090] In the embodiment of FIG. 4, the exhaust pipe plasma source gas supply (130) may not be provided, and this also falls within the scope of the present invention.

[0091] Hereinafter, the operation of the plasma equipment (410) for exhaust gas treatment according to various processes performed in the process chamber (102) will be described in detail.

[0092] First, the operation of the plasma equipment (410) for treating exhaust gas when the SiO2 process using a process gas containing a Si-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (102), exhaust gas containing SiO2 powder, unreacted TEOS, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0093] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted TEOS contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). *) reacts with the exhaust pipe plasma reactor (120) to produce SiO2, which is a stabilized powder. The SiO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the SiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and gasify to form SiF4.

[0094] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the powder collection trap (140) and the vacuum pump (106). The SiO2 powder contained in the exhaust gas discharged from the powder collection trap (140) is excited by the fluorine atoms (F) generated and supplied in the remote plasma reactor (150). * ) reacts with and gasifies to form SiF4.

[0095] Next, the operation of the plasma equipment (410) for treating exhaust gas when the TiO2 process using a process gas containing a Ti-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (102), exhaust gas containing TiO2 powder, unreacted Ti(OCH2CH3)4, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0096] The action in the exhaust pipe plasma reactor (120) is as follows. Unreacted Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce TiO2, which is a stabilized powder. The TiO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the TiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and gasify to form TiF4.

[0097] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the powder collection trap (140) and the vacuum pump (106). The TiO2 powder contained in the exhaust gas discharged from the powder collection trap (140) is excited by the fluorine atoms (F) generated and supplied in the remote plasma reactor (150). * ) reacts with and gasifies to form TiF4.

[0098] Next, the operation of the plasma equipment (410) for exhaust gas treatment when the ZrO2 process is performed using a process gas containing a Zr-containing precursor in the process chamber (102) is described as follows. In this embodiment, it is described that (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (102), exhaust gas containing ZrO2 powder, unreacted (C5H5)Zr(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0099] The action in the exhaust pipe plasma reactor (120) is as follows. Unreacted (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce ZrO2, which is a stabilized powder. The ZrO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the ZrO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and be gasified to form ZrF4.

[0100] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the powder collection trap (140) and the vacuum pump (106). The ZrO2 powder contained in the exhaust gas discharged from the powder collection trap (140) is excited by the fluorine atoms (F) generated and supplied from the remote plasma reactor (150). * ) reacts with and gasifies to form ZrF4.

[0101] Next, the operation of the plasma equipment (410) for exhaust gas treatment when the HfO2 process using a process gas containing a Hf-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it is described that (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (102), the exhaust gas containing HfO2 powder, unreacted (C5H5)Hf(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0102] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce HfO2, which is a stabilized powder. The HfO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the HfO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and be gasified to form HfF4.

[0103] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the powder collection trap (140) and the vacuum pump (106). The HfO2 powder contained in the exhaust gas discharged from the powder collection trap (140) is excited fluorine atoms (F) generated and supplied in the remote plasma reactor (150). * ) reacts with and gasifies to form HfF4.

[0104] Next, the operation of the plasma equipment (410) for exhaust gas treatment when the Nb2O5 process is performed using a process gas containing a Nb-containing precursor in the process chamber (102) is described as follows. In this embodiment, it is described that (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (102), exhaust gas containing Nb2O5 powder, unreacted (C5H5)Nb(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0105] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the Nb2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and gasify to form NbF5.

[0106] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the powder collection trap (140) and the vacuum pump (106). The Nb2O5 powder contained in the exhaust gas discharged from the powder collection trap (140) is excited by the fluorine atoms (F) generated and supplied from the remote plasma reactor (150). * ) reacts with and gasifies to form NbF5.

[0107] Next, the operation of the plasma equipment (410) for treating exhaust gas when the Ta2O5 process using a process gas containing a Ta-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (102), the exhaust gas containing Ta2O5 powder, unreacted Ta(OC2H5)5, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), the high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0108] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the Ta2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and be gasified to form TaF5.

[0109] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the section between the powder collection trap (140) and the vacuum pump (106). The Ta2O5 powder contained in the exhaust gas discharged from the powder collection trap (140) is excited by the fluorine atoms (F) generated and supplied from the remote plasma reactor (150). * ) reacts with and gasifies to form TaF5.

[0110] FIG. 5 is a block diagram schematically illustrating a configuration of a semiconductor manufacturing facility in which a plasma device for treating exhaust gas according to a fifth embodiment of the present invention is installed. Referring to FIG. 5, the semiconductor manufacturing facility (500) includes a semiconductor manufacturing facility (101) in which a semiconductor manufacturing process for manufacturing a semiconductor device is performed, a gas purification facility (103) for purifying gas discharged from the semiconductor manufacturing facility (101), an exhaust facility (105) for discharging gas from the semiconductor manufacturing facility (101) and causing it to flow to the gas purification facility (103), and a plasma device (510) for treating exhaust gas according to the fifth embodiment of the present invention for treating gas discharged from the semiconductor manufacturing facility (101). Except for the plasma device (510) for treating exhaust gas in the semiconductor manufacturing facility (500), the remaining configuration is substantially the same as that of the semiconductor manufacturing facility (100) illustrated in FIG. 1.

[0111] Plasma equipment (510) for treating exhaust gas comprises an exhaust pipe plasma reactor (120) that generates a plasma reaction for exhaust gas discharged from a semiconductor process chamber (102), an exhaust pipe plasma source gas supplier (130) that supplies plasma source gas to the exhaust pipe plasma reactor (120), a powder collection trap (140) that is installed on the chamber exhaust pipe (107) and collects powder, a remote plasma reactor (150) that uses plasma to generate reactive species supplied to the chamber exhaust pipe (107), a remote plasma source gas supplier (160) that supplies gas to the remote plasma reactor (150), a common power supply (170) that produces power required for the operation of both the exhaust pipe plasma reactor (120) and the remote plasma reactor (150), and power that distributes power produced by the common power supply (170) and supplies it to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150). It comprises a distributor (180), a controller (190) for controlling the operation of the power distributor (180), an exhaust pipe plasma impedance matching unit (195) for matching the impedance between the power distributor (180) and the exhaust pipe plasma reactor (120), and a remote plasma impedance matching unit (198) for matching the impedance between the power distributor (180) and the remote plasma reactor (150).

[0112] The reactive species generated in the remote plasma reactor (150) are directly introduced into the upstream side of the exhaust plasma reactor (120) from the chamber exhaust pipe (107).

[0113] Except for the location where the reactive active species generated in the remote plasma reactor (150) is supplied to the plasma equipment (510) for exhaust gas treatment, the remaining configuration is the same as that of the plasma equipment (110) for exhaust gas treatment of the embodiment illustrated in FIG. 1.

[0114] In the embodiment of FIG. 5, the exhaust pipe plasma source gas supply (130) may not be provided, and this also falls within the scope of the present invention.

[0115] Hereinafter, the operation of the plasma equipment (510) for exhaust gas treatment according to various processes performed in the process chamber (102) will be described in detail.

[0116] First, the operation of the plasma equipment (510) for treating exhaust gas when the SiO2 process using a process gas containing a Si-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that TEOS is used as the Si-containing precursor. After the SiO2 process is performed in the process chamber (102), exhaust gas containing SiO2 powder, unreacted TEOS, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0117] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted TEOS contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). *) reacts with the exhaust pipe plasma reactor (120) to produce SiO2, which is a stabilized powder. The SiO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the SiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and gasify to form SiF4.

[0118] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). The SiO2 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited fluorine atoms (F) generated and supplied in the remote plasma reactor (150). * ) reacts with and gasifies to form SiF4. In addition, the remote plasma reactor (150) decomposes oxygen supplied by the remote plasma source gas supplier (160) to generate excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). Unreacted TEOS contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited oxygen atoms (O * ) can react with SiO2 powder to produce SiO2 powder, which can be captured in the powder collection trap (140).

[0119] Next, the operation of the plasma equipment (510) for exhaust gas treatment when the TiO2 process using a process gas containing a Ti-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that Ti(OCH2CH3)4 is used as the Ti-containing precursor. After the TiO2 process is performed in the process chamber (102), exhaust gas containing TiO2 powder, unreacted Ti(OCH2CH3)4, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0120] The action in the exhaust pipe plasma reactor (120) is as follows. Unreacted Ti(OCH2CH3)4 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce TiO2, which is a stabilized powder. The TiO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the TiO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and gasify to form TiF4.

[0121] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). The TiO2 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited fluorine atoms (F) generated and supplied in the remote plasma reactor (150). * ) reacts with the gas to form TiF4. In addition, the remote plasma reactor (150) decomposes the oxygen supplied by the remote plasma source gas supplier (160) to form excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). Unreacted Ti(OCH2CH3)4 contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited oxygen atoms (O * ) can react with TiO2 powder to produce TiO2 powder, which can be captured in a powder collection trap (140).

[0122] Next, the operation of the plasma equipment (510) for exhaust gas treatment when the ZrO2 process is performed using a process gas containing a Zr-containing precursor in the process chamber (102) is described as follows. In this embodiment, it is described that (C5H5)Zr(N(CH3)2)3 is used as the Zr-containing precursor. After the ZrO2 process is performed in the process chamber (102), exhaust gas containing ZrO2 powder, unreacted (C5H5)Zr(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0123] The action in the exhaust pipe plasma reactor (120) is as follows. Unreacted (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce ZrO2, which is a stabilized powder. The ZrO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the ZrO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and be gasified to form ZrF4.

[0124] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). The ZrO2 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited fluorine atoms (F) generated and supplied in the remote plasma reactor (150). * ) reacts with and gasifies to form ZrF4. In addition, the remote plasma reactor (150) decomposes oxygen supplied by the remote plasma source gas supplier (160) to generate excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). Unreacted (C5H5)Zr(N(CH3)2)3 contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited oxygen atom (O * ) to produce ZrO2 powder, which can be captured in a powder collection trap (140).

[0125] Next, the operation of the plasma equipment (510) for exhaust gas treatment when the HfO2 process using a process gas containing a Hf-containing precursor is performed in the process chamber (102) is described as follows. In this embodiment, it is described that (C5H5)Hf(N(CH3)2)3 is used as the Hf-containing precursor. After the HfO2 process is performed in the process chamber (102), the exhaust gas containing HfO2 powder, unreacted (C5H5)Hf(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0126] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce HfO2, which is a stabilized powder. The HfO2 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the HfO2 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and be gasified to form HfF4.

[0127] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). The HfO2 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited fluorine atoms (F) generated and supplied in the remote plasma reactor (150). * ) reacts with and is gasified to form HfF4. In addition, the remote plasma reactor (150) decomposes the oxygen supplied by the remote plasma source gas supplier (160) to generate excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). Unreacted (C5H5)Hf(N(CH3)2)3 contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited oxygen atom (O * ) to produce HfO2 powder, which can be captured in a powder collection trap (140).

[0128] Next, the operation of the plasma equipment (510) for exhaust gas treatment when the Nb2O5 process is performed using a process gas containing a Nb-containing precursor in the process chamber (102) is described as follows. In this embodiment, it is described that (C5H5)Nb(N(CH3)2)3 is used as the Nb-containing precursor. After the Nb2O5 process is performed in the process chamber (102), exhaust gas containing Nb2O5 powder, unreacted (C5H5)Nb(N(CH3)2)3, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While exhaust gas is discharged from the semiconductor process chamber (102), high-frequency AC power produced from a common power supply (170) is distributed and supplied to the exhaust plasma reactor (120) and the remote plasma reactor (150) by a power distributor (180) controlled by a controller (190), so that the exhaust plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0129] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce Nb2O5, which is a stabilized powder. The Nb2O5 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the Nb2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and gasify to form NbF5.

[0130] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). The Nb2O5 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited fluorine atoms (F) generated and supplied in the remote plasma reactor (150). * ) reacts with and gasifies to form NbF5. In addition, the remote plasma reactor (150) decomposes the oxygen supplied by the remote plasma source gas supplier (160) to generate excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). Unreacted (C5H5)Nb(N(CH3)2)3 contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited oxygen atom (O * ) to produce Nb2O5 powder, which can be captured in a powder collection trap (140).

[0131] Next, the operation of the plasma equipment (510) for treating exhaust gas when the Ta2O5 process using a process gas containing a Ta-containing precursor is performed in the process chamber (102) will be described as follows. In this embodiment, it will be described that Ta(OC2H5)5 is used as the Ta-containing precursor. After the Ta2O5 process is performed in the process chamber (102), the exhaust gas containing Ta2O5 powder, unreacted Ta(OC2H5)5, and oxygen is discharged from the semiconductor process chamber (102) by the operation of the vacuum pump (106). While the exhaust gas is discharged from the semiconductor process chamber (102), the high-frequency AC power produced in the common power supply (170) is distributed and supplied to the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) by the power distributor (180) controlled by the controller (190), so that the exhaust pipe plasma reactor (120) and the remote plasma reactor (150) operate simultaneously.

[0132] The operation in the exhaust pipe plasma reactor (120) is as follows. Unreacted Ta(OC2H5)5 contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by oxygen atoms (O) generated by oxygen supplied by the exhaust pipe plasma source gas supplier (130). * ) reacts with the exhaust pipe plasma reactor (120) to produce Ta2O5, which is a stabilized powder. The Ta2O5 powder produced in the exhaust pipe plasma reactor (120) is discharged from the exhaust pipe plasma reactor (120), flows along the chamber exhaust pipe (107), and is collected in the powder collection trap (140). In addition, the Ta2O5 powder contained in the exhaust gas discharged from the semiconductor process chamber (102) is excited by fluorine atoms (F) produced by nitrogen trifluoride (NF3) supplied by the exhaust pipe plasma source gas supplier (130). * ) can react with and be gasified to form TaF5.

[0133] The operation in the remote plasma reactor (150) is as follows. The remote plasma reactor (150) decomposes nitrogen trifluoride (NF3) supplied by the remote plasma source gas supplier (160) to generate excited fluorine atoms (F * ) is generated. Excited fluorine atoms (F) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). Ta2O5 powder contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited fluorine atoms (F) generated and supplied in the remote plasma reactor (150). * ) reacts with and gasifies to form TaF5. In addition, the remote plasma reactor (150) decomposes oxygen supplied by the remote plasma source gas supplier (160) to generate excited oxygen atoms (O * ) can be generated. Excited oxygen atoms (O ) generated in the remote plasma reactor (150) * ) is supplied from the chamber exhaust pipe (107) to the upstream side of the exhaust pipe plasma reactor (120). Unreacted Ta(OC2H5)5 contained in the exhaust gas flowing into the exhaust pipe plasma reactor (120) is excited oxygen atom (O * ) to produce Ta2O5 powder, which can be captured in a powder collection trap (140).

[0134] While the present invention has been described through the above examples, the present invention is not limited thereto. The above examples may be modified or altered without departing from the spirit and scope of the present invention, and those skilled in the art will recognize that such modifications and variations also fall within the scope of the present invention.

Claims

1. Equipment for processing exhaust gas discharged through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump by a vacuum pump from a semiconductor process chamber where a semiconductor manufacturing process using process gas is performed. An exhaust pipe plasma reactor installed on the chamber exhaust pipe to generate plasma in the exhaust gas and remove a target component contained in the exhaust gas; A remote plasma reactor that generates a plasma to decompose a remote plasma source gas to produce a remote plasma containing remote reaction active species; A common power supply that simultaneously produces AC power required for the operation of the above exhaust pipe plasma reactor and the above remote plasma reactor; and It includes a power distributor that distributes AC power produced from the above public power supply and supplies it simultaneously to the exhaust pipe plasma reactor and the remote plasma reactor, The above remote plasma is supplied between the semiconductor process chamber and the vacuum pump on the flow line of the exhaust gas, One of the above exhaust pipe plasma reactor and the above remote plasma reactor is an inductively coupled plasma reactor, and the other is a capacitively coupled plasma reactor. Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

2. In claim 1, The above exhaust pipe plasma reactor is an inductively coupled plasma (ICP) reactor, and the above remote plasma reactor is a capacitively coupled plasma (CCP) reactor. Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

3. In claim 1, Further comprising an exhaust pipe plasma impedance matching unit for matching impedance between the power distributor and the exhaust pipe plasma reactor, and a remote plasma impedance matching unit for matching impedance between the power distributor and the remote plasma reactor. Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

4. In claim 1, Further comprising a controller for controlling the operation of the power distributor to adjust the ratio of the power supplied to the exhaust pipe plasma reactor and the power supplied to the remote plasma reactor from the AC power produced by the common power supply device. Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

5. In claim 1, It further includes a powder collection trap installed between the exhaust pipe plasma reactor and the vacuum pump on the chamber exhaust pipe to collect powder contained in the exhaust gas. wherein the above remote plasma is supplied to the powder collection trap, Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

6. In claim 1, It further includes a powder collection trap installed between the exhaust pipe plasma reactor and the vacuum pump on the chamber exhaust pipe to collect powder contained in the exhaust gas. The above remote plasma is supplied from the chamber exhaust pipe to the upstream side of the exhaust pipe plasma reactor, Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

7. In claim 5 or claim 6, The above remote plasma is excited oxygen atoms (O * ) and The unreacted precursor contained in the above exhaust gas is excited oxygen atoms (O ) contained in the remote plasma. * ) reacts with the powder component to form a powder component, The above unreacted precursor and the above excited oxygen atom (O * ) is formed by the reaction, and the powder component is captured in the powder capture trap. Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

8. In claim 5 or claim 6, Further comprising an exhaust pipe plasma source gas supply unit for supplying exhaust pipe plasma source gas to the above exhaust pipe plasma reactor, The above exhaust pipe plasma reactor decomposes the exhaust pipe plasma source gas to produce excited oxygen atoms (O * ) is created, The unreacted precursor contained in the above exhaust gas is excited oxygen atoms (O) generated in the exhaust pipe plasma reactor. * ) reacts with the powder component to form a powder component, The above unreacted precursor and the above excited oxygen atom (O * ) is formed by the reaction, and the powder component is captured in the powder capture trap. Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

9. In claim 7 or claim 8, The above unreacted precursor is a Si-containing precursor, a Ti-containing precursor, a Zr-containing precursor, a Hf-containing precursor, a Nb-containing precursor or a Ta-containing precursor. Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

10. In claim 1, It further includes a powder collection trap installed between the exhaust pipe plasma reactor and the vacuum pump on the chamber exhaust pipe to collect powder contained in the exhaust gas. The above remote plasma is supplied from the chamber exhaust pipe between the powder collection trap and the vacuum pump, Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

11. In claim 1, Further comprising a cooler installed between the exhaust pipe plasma reactor and the vacuum pump on the chamber exhaust pipe to lower the temperature of the exhaust gas, The above remote plasma is supplied from the chamber exhaust pipe between the exhaust pipe plasma reactor and the cooler, Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

12. In claim 1, The above remote plasma is supplied between the exhaust pipe plasma reactor and the vacuum pump on the chamber exhaust pipe, Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

13. In claim 1, The above remote plasma is excited by fluorine atoms (F * ) and The powder component contained in the above exhaust gas is excited fluorine atoms (F) contained in the above remote plasma. * ) reacts with and gasifies, Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

14. In claim 1, Further comprising an exhaust pipe plasma source gas supply unit for supplying exhaust pipe plasma source gas to the above exhaust pipe plasma reactor, The above exhaust pipe plasma reactor decomposes the exhaust pipe plasma source gas to produce excited fluorine atoms (F * ) is created, The powder component contained in the above exhaust gas is excited fluorine atoms (F) generated in the exhaust pipe plasma reactor. * ) reacts with and gasifies, Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

15. In claim 13 or claim 14, The above powder component is SiO2 powder, TiO2 powder, ZrO2 powder, HfO2 powder, Nb2O5 powder or Ta2O5 powder. Plasma equipment for exhaust gas treatment in semiconductor manufacturing facilities.

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