Substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus and, more particularly, to a substrate processing apparatus using a hollow cathode plasma (HCP) method to plasma-convert process gas diffused by a shower head. The substrate processing apparatus according to an embodiment of the present invention comprises: a process chamber for providing a processing space for processing a substrate; a shower head which includes a plurality of injection holes and which injects process gas through the plurality of injection holes; and a plasma generation unit which includes a plurality of through-holes for forming an electric field by means of supplied RF power and plasma-converts, into a plasma state process material, the process gas supplied from the shower head, wherein the plasma generation unit is arranged below the shower head.

Description

Substrate processing device

[0001] The present invention relates to a substrate processing device, and more particularly, to a substrate processing device that converts process gas diffused by a showerhead into plasma using a hollow cathode plasma (HCP) method.

[0002] Chemical vapor deposition (CVD) or atomic layer deposition (ALD) can be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a thin film can be formed by a source gas causing a chemical reaction on the surface of the substrate. In particular, in the case of atomic layer deposition, since a single layer of the source gas attached to the surface of the substrate forms a thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

[0003] To expand the processing temperature range, plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD) can be used. Because PECVD and PEALD can be processed at lower temperatures than chemical vapor deposition and ALD, the physical properties of the thin film can be improved.

[0004] Thin films can also be used to form interlayer insulating films. However, if the gaps between wires are small, proper thin film formation may not occur due to the deposition material not easily penetrating the gaps. For example, if the gap entrance is narrow, the film material formed around the entrance may prevent the deposition material from penetrating into the gap, resulting in the formation of a void.

[0005] Therefore, there is a need for an invention that enables the gap to be filled by allowing the deposition material to penetrate into the inside of the gap.

[0006] The problem to be solved by the present invention is to provide a substrate processing device that converts process gas diffused by a showerhead into plasma using a hollow cathode plasma (HCP) method.

[0007] The objects of the present invention are not limited to the objects mentioned above, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

[0008] In order to achieve the above object, a substrate processing device according to an embodiment of the present invention includes a process chamber that provides a process processing space for a substrate process, a showerhead including a plurality of injection holes and injecting a process gas through the plurality of injection holes, and a plasma generator including a plurality of through holes that form an electric field by supplied RF power and converting a process gas supplied from the showerhead into a process material in a plasma state, wherein the plasma generator is disposed below the showerhead.

[0009] The plurality of injection holes and the plurality of through holes are arranged so as not to overlap each other in the direction in which the process gas passes through the plurality of injection holes.

[0010] The diameter of the plurality of through holes is formed to be larger than the diameter of the plurality of injection holes, the length of the plurality of through holes is formed to be longer than the length of the plurality of injection holes, and the number of the plurality of through holes is formed to be smaller than the number of the plurality of injection holes.

[0011] The substrate processing device further includes a gas supply line that provides a transport path for process gas supplied to the showerhead, and the gas supply line is connected to the center of the showerhead.

[0012] The showerhead includes a back plate connected to the gas supply line and a spray plate having a plurality of spray holes formed therein, and the back plate includes an inclined guide surface whose distance from the spray plate decreases as it moves toward the edge from a point connected to the gas supply line.

[0013] The above-mentioned inclined guide surface is provided in a cone shape or a trumpet shape.

[0014] The above back plate includes a parallel guide surface in which the distance from the injection plate is maintained the same as it progresses toward the edge from the inclined guide surface.

[0015] The cross-section of the inner surface of the gas supply line is provided in a circular shape, and the diameter of the inner surface of the gas supply line is determined so that the plurality of injection holes do not interfere with the extension of the inner surface of the gas supply line toward the injection plate.

[0016] The above plurality of injection holes are formed in the injection plate in a radial pattern, and among the plurality of injection holes, a central injection hole arranged in the center and a radial injection hole arranged radially first from the central injection hole are included in an inner area of ​​the extension line.

[0017] Among the plurality of injection holes, the diameter of the injection hole included in the inner area of ​​the extension line is formed smaller than the diameter of the other injection holes.

[0018] The showerhead and the plasma generating unit each include a first diffusion space and a second diffusion space for diffusion of a process gas, and the diameter of the first diffusion space is formed to be equal to or smaller than the diameter of the second diffusion space.

[0019] Each of the plurality of injection holes includes a first diameter maintenance section in which the diameter is maintained the same, and a first diameter expansion section that is formed to extend from the first diameter maintenance section and has a larger diameter than the first diameter maintenance section.

[0020] The diameter of the first diameter expansion section gradually increases as it moves away from the first diameter maintenance section.

[0021] The length of the first diameter maintenance section is formed longer than the length of the first diameter expansion section.

[0022] The plurality of through holes include a second diameter maintenance section in which the diameter is maintained the same, and a second diameter expansion section that is formed to extend from the second diameter maintenance section and has a larger diameter than the second diameter maintenance section.

[0023] The diameter of the second diameter expansion section gradually increases as it moves away from the second diameter maintenance section.

[0024] The length of the second diameter maintenance section is formed longer than the length of the second diameter expansion section.

[0025] The above plasma generating unit converts process gas into process material in a plasma state using a hollow cathode plasma (HCP) method.

[0026] Specific details of other embodiments are included in the detailed description and drawings.

[0027] According to the substrate processing device of the present invention as described above, since the process gas diffused by the showerhead is converted into plasma using the hollow cathode plasma (HCP) method, there is an advantage in that the diffusion efficiency of the process gas and the plasma conversion efficiency are improved.

[0028] The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

[0029] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention.

[0030] Figure 2 is a drawing showing that the substrate support has moved into the process processing space.

[0031] Figure 3 is a plan view of the shower head.

[0032] Figure 4 is a drawing for explaining the arrangement relationship between the spray holes of the shower head and the plasma generating unit.

[0033] Figure 5 is a drawing for explaining the arrangement relationship between the shower head and the gas supply line.

[0034] Figure 6 is a drawing for explaining the deposition pattern of a thin film.

[0035] Figure 7 is a drawing showing a showerhead and a plasma generator having a conical inclined guide surface.

[0036] Fig. 8 is a drawing showing a showerhead and a plasma generator having a trumpet-shaped inclined guide surface.

[0037] Figure 9 is a drawing showing an injection hole including a first diameter expansion section with a gradually increasing diameter.

[0038] Figure 10 is a drawing showing a through hole including a second diameter expansion section with a gradually increasing diameter.

[0039] Figure 11 is a drawing showing a through hole including a second diameter expansion section having a larger diameter than a second diameter maintenance section.

[0040] Figure 12 is a drawing showing a gap formed in the substrate.

[0041] Figure 13 is a drawing showing a thin film being deposited on a substrate.

[0042] Figure 14 is a drawing for explaining the process of depositing a thin film on a substrate.

[0043] Figure 15 is a diagram showing the deposition rate.

[0044] Figure 16 is a drawing showing the etching rate.

[0045] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described in detail below together with the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

[0046] Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used in their common sense to those of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0047] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention, and FIG. 2 is a drawing showing a substrate support part moved into a process processing space.

[0048] Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention is configured to include a process chamber (100), a substrate support unit (200), an elevation unit (300), a gas supply unit (400), a gas pressurization unit (500), a showerhead (600), a plasma generation unit (700), a power supply unit (800), and a control unit (900).

[0049] A substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). For example, the substrate processing device (10) can deposit a thin film on the substrate (W) using plasma enhanced atomic layer deposition (PEALD).

[0050] The process chamber (100) may include a chamber body (110) and a chamber lid (120). The chamber body (110) provides a space for accommodating various components for processing a substrate (W), and the chamber lid (120) may seal an upper opening of the chamber body (110). The chamber lid (120) may support a showerhead (600) and a plasma generator (700). For example, the showerhead (600) and the plasma generator (700) may be stacked and provided on the chamber lid (120).

[0051] The process chamber (100) can provide a process processing space (SP1) and a substrate placement space (SP2). The process processing space (SP1) represents a space for processing a substrate (W), and the substrate placement space (SP2) represents a space for placement and movement of the substrate (W). The process processing space (SP1) and the substrate placement space (SP2) can be formed by combining the chamber body (110) and the chamber lid (120). Among the internal spaces of the process chamber (100), an upper space may correspond to the process processing space (SP1), and a lower space may correspond to the substrate placement space (SP2).

[0052] A substrate entrance (130) for entrance and exit of a substrate (W) may be formed on one side of the process chamber (100). For example, the substrate entrance (130) may be formed on one side of the chamber body (110). The substrate (W) may be introduced into or taken out of the process chamber (100) through the substrate entrance (130).

[0053] The process chamber (100) may be equipped with a shutter (140). The shutter (140) may open or close the substrate entrance (130). When the shutter (140) opens the substrate entrance (130), the substrate (W) may be loaded or unloaded through the substrate entrance (130). When a process for the substrate (W) is in progress, the shutter (140) may close the substrate entrance (130) to block the interior of the process chamber (100) from the exterior.

[0054] The substrate support (200) may have a mounting surface on which a substrate (W) can be mounted. A process may be performed on the substrate (W) mounted on the mounting surface of the substrate support (200). The substrate support (200) may heat the substrate (W). For this purpose, a heater (not shown) may be provided inside the substrate support (200). Heat emitted from the heater may be transferred to the substrate (W) through the body of the substrate support (200).

[0055] The substrate support (200) can be raised to a process processing space (SP1) where a process for the substrate (W) is performed, or lowered to a substrate placement space (SP2) where placement and movement of the substrate (W) are performed. The elevating unit (300) can generate a driving force to move the substrate support (200) in the up and down direction. Fig. 1 illustrates the substrate support (200) being lowered to the substrate placement space (SP2), and Fig. 2 illustrates the substrate support (200) being raised to the process processing space (SP1).

[0056] The gas supply unit (400) serves to supply process gas to the process chamber (100). Specifically, the gas supply unit (400) can supply process gas to the showerhead (600). To this end, the gas supply unit (400) can be connected to the showerhead (600) via a gas supply line (410). The gas supply line (410) can provide a transport path for the process gas supplied to the showerhead (600).

[0057] The gas pressurization unit (500) can pressurize the process gas and supply it to the gas supply unit (400). A plurality of gas transfer lines (510) can be connected to the gas pressurization unit (500). Different process gases can be transported through the plurality of gas transfer lines (510). The gas pressurization unit (500) can individually pressurize the process gases transported through the plurality of gas transfer lines (510) and supply them to the gas supply unit (400). The process gas can be injected into the gas supply unit (400) at a predetermined pressure. Accordingly, the gas supply unit (400) can supply the process gas to the showerhead (600) at a uniform pressure.

[0058] The gas pressurization unit (500) may include a gas pressurization tank (520). A plurality of gas pressurization tanks (520) may be provided. For example, a gas pressurization tank (520) may be provided for each of a plurality of gas transfer lines (510). The gas pressurization tank (520) may pressurize and discharge process gas injected through the gas transfer line (510).

[0059] The showerhead (600) serves to supply the process gas supplied from the gas supply unit (400) to the plasma generation unit (700). The showerhead (600) can diffuse the process gas and supply the diffused process gas to the plasma generation unit (700). In the present invention, the process gas may include a source gas, a source purge gas, a reaction gas, and a reaction purge gas. The source gas, the source purge gas, the reaction gas, and the reaction purge gas may be sequentially supplied from the showerhead (600), or at least some of them may be supplied simultaneously.

[0060] The showerhead (600) may include a back plate (610) and a spray plate (620). The back plate (610) may be connected to a gas supply line (410). Process gas supplied through the gas supply line (410) may be supplied into the interior of the showerhead (600) through a supply hole formed in the back plate (610).

[0061] A plurality of injection holes (640) may be formed in the injection plate (620). The showerhead (600) may inject a process gas through the plurality of injection holes (640). The showerhead (600) may include a first diffusion space (630) for diffusion of the process gas. The first diffusion space (630) may be formed between the back plate (610) and the injection plate (620). The process gas supplied through the gas supply unit (400) may be diffused in the first diffusion space (630). The diffused process gas may be injected from the plurality of injection holes (640) and supplied to the plasma generation unit (700).

[0062] The plasma generator (700) can convert the process gas supplied from the showerhead (600) into a process material in a plasma state. The plasma generator (700) can convert the process gas into a plasma state using a hollow cathode plasma (HCP) method. The process material generated by converting the process gas into plasma can include radicals, ions, and electrons.

[0063] The plasma generating unit (700) may include a plasma generating body (710) and a plasma generating plate (720). One side of the plasma generating body (710) may be coupled to a showerhead (600). The plasma generating body (710) and the showerhead (600) may be insulated by an insulator. The other side of the plasma generating body (710) that is not coupled to the showerhead (600) may be coupled to a chamber lid (120). The plasma generating body (710) and the chamber lid (120) may be insulated by an insulator.

[0064] A plurality of through holes (740) may be formed in the plasma generating plate (720). The plurality of through holes (740) may form an electric field by the supplied RF power. By the electric field, the process gas passing through the through holes (740) may be converted into a process material in a plasma state.

[0065] The plasma generation unit (700) may be disposed at the lower side of the showerhead (600). The plasma generation unit (700) may include a second diffusion space (730) for diffusion of the process gas. The second diffusion space (730) may be formed between the spray plate (620) of the showerhead (600) and the plasma generation plate (720) of the plasma generation unit (700). The process gas supplied through the showerhead (600) may be diffused in the second diffusion space (730). The diffused process gas may be converted into plasma while passing through a plurality of through holes (740) and supplied into the interior of the process chamber (100). Since the process gas diffused in the first diffusion space (630) is additionally diffused and converted into plasma in the second diffusion space (730), the process material may be supplied to the substrate (W) over a wider range, and the quality of the thin film deposited on the substrate (W) may be improved.

[0066] The power supply unit (800) can supply RF power to the plasma generation unit (700). When RF power is supplied to the plasma generation unit (700), an electric field is formed in the through hole (740), and the process gas passing through the through hole (740) can be converted into a plasma state.

[0067] Plasma conversion by the plasma generator (700) can be selectively performed. When the power supply unit (800) supplies RF power to the plasma generator (700), the plasma generator (700) converts the process gas into plasma, and when the power supply unit (800) does not supply RF power to the plasma generator (700), the plasma generator (700) may not convert the process gas into plasma. As a result, the plasma generator (700) can selectively supply the process gas or the process material to the process chamber (100).

[0068] The process gas and process material supplied to the process chamber (100) can be used to form a thin film. After the source gas is distributed to the substrate (W), a thin film can be formed as the process material for the reaction gas reacts with the source gas.

[0069] The process chamber (100) may be equipped with a gas port (150). The gas port (150) may be disposed on the inner lower surface of the chamber body (110). For example, the gas port (150) may be disposed in an area vertically overlapping the substrate support (200) to effectively discharge process byproducts. Meanwhile, the gas port (150) being disposed on the inner lower surface of the chamber body (110) is exemplary, and according to some embodiments of the present invention, the gas port (150) may be disposed on the inner side surface of the chamber body (110). For example, when the substrate support (200) is raised to the process processing space (SP1), the gas port (150) may be disposed in an area between the substrate support (200) and the showerhead (600). Hereinafter, the gas port (150) disposed on the inner lower surface of the chamber body (110) will be mainly described.

[0070] The gas port (150) may provide a discharge path for process byproducts. Here, the process byproducts may include all materials that must be discharged from the process chamber (100), such as process gases supplied to the process chamber (100) or remaining gases not used in forming a thin film among the process materials. For example, the process byproducts may include source gases, process materials for reaction gases, source purge gases, and reaction purge gases.

[0071] An exhaust line (160) may be connected to the gas port (150). The exhaust line (160) may provide a transport path for process byproducts introduced through the gas port (150). A pressure pump (170) may be provided in the exhaust line (160). The pressure pump (170) may pressurize the internal space of the exhaust line (160) so that the process byproducts introduced into the gas port (150) may be transported through the exhaust line (160). The process byproducts transported through the exhaust line (160) may be discharged from the process chamber (100).

[0072] The control unit (900) can perform overall control of the substrate processing device (10). For example, the control unit (900) can operate the shutter (140) to open and close the substrate entrance (130), or control the lifting unit (300) to move the substrate support unit (200). In addition, the control unit (900) can control the gas supply unit (400) to supply the process gas to the showerhead (600). At least one process gas selected from among the source gas, the source purge gas, the reaction gas, and the reaction purge gas can be supplied to the showerhead (600) under the control of the control unit (900). In addition, the control unit (900) can also control the supply of RF power by the power supply unit (800).

[0073] Figure 3 is a plan view of the shower head.

[0074] Referring to FIG. 3, the showerhead (600) may include a plurality of spray holes (640).

[0075] A plurality of injection holes (640) may be formed in a radial pattern in the injection plate (620). Specifically, a plurality of injection holes (640) may be arranged on a first circumference. The plurality of injection holes (640) arranged on the first circumference may be arranged to be spaced apart from each other by a first interval. In addition, a plurality of injection holes (640) may be arranged on a second circumference arranged around the first circumference. The plurality of injection holes (640) arranged on the second circumference may be spaced apart from each other by a second interval. In addition, a plurality of injection holes (640) may be arranged on a third circumference arranged around the second circumference. The plurality of injection holes (640) arranged on the third circumference may be spaced apart from each other by a third interval. In this case, the first to third intervals may be the same. Additionally, the spacing between the first and second circumferences may be the same as the spacing between the second and third circumferences. That is, the injection holes (640) may be provided in the same number per unit area or in the same plane on the lower surface of the showerhead (600).

[0076] Hereinafter, the spray hole (640) arranged at the center of the showerhead (600) is referred to as the central spray hole, and the spray holes (640) arranged radially from the central spray hole are referred to as radial spray holes. A plurality of radial spray holes may be included on a single circumference formed based on the center of the showerhead (600) to form a single radial spray hole group. The showerhead (600) may include a plurality of radial spray hole groups having different diameters.

[0077] Figure 4 is a drawing for explaining the arrangement relationship between the spray holes of the shower head and the plasma generating unit.

[0078] Referring to FIG. 4, the injection holes (640) of the showerhead (600) may be positioned in an area that does not overlap with the through holes (740) of the plasma generator (700). Specifically, the plurality of injection holes (640) and the plurality of through holes (740) may be positioned so that they do not overlap with each other in the direction in which the process gas passes through the plurality of injection holes (640).

[0079] When the injection hole (640) of the showerhead (600) and the through hole (740) of the plasma generator (700) overlap, the process gas passing through the injection hole (640) may be discharged through the through hole (740) without being sufficiently diffused in the second diffusion space (730). In this case, the uniformity characteristics of the deposited material deposited on the substrate (W) may be deteriorated, so it is preferable that the injection hole (640) and the through hole (740) do not overlap each other.

[0080] The diameter of the plurality of through holes (740) may be formed to be larger than the diameter of the plurality of injection holes (640), the length of the plurality of through holes (740) may be formed to be longer than the length of the plurality of injection holes (640), and the number of the plurality of through holes (740) may be formed to be smaller than the number of the plurality of injection holes (640). Since the process gas is injected through the injection holes (640) having a relatively small diameter, the process gas is injected into the second diffusion space (730) at a relatively high pressure and can be diffused more easily. The process gas can be converted into plasma while passing through the through holes (740) having a relatively large diameter. The diameter and number of the through holes (740) may be appropriately determined in consideration of the process environment.

[0081] Fig. 5 is a drawing for explaining the arrangement relationship between the shower head and the gas supply line, and Fig. 6 is a drawing for explaining the deposition pattern of the thin film.

[0082] Referring to FIG. 5, the gas supply line (410) can be connected to the center of the showerhead (600).

[0083] The process gas discharged from the gas supply line (410) can be diffused in the first diffusion space (630) of the showerhead (600). Since the gas supply line (410) is connected to the center of the showerhead (600), the process gas can be diffused from the center to the edge of the first diffusion space (630). In this case, the density of the process gas can decrease as it progresses from the center to the edge of the first diffusion space (630). This density distribution of the process gas can also be maintained in the second diffusion space (730) of the plasma generation unit (700). That is, the density of the process material discharged from the plasma generation unit (700) can decrease as it progresses from the center to the edge of the second diffusion space (730). As a result, the thickness of the thin film deposited on the substrate (W) can decrease as it progresses from the center to the edge of the substrate (W).

[0084] The cross-section of the inner surface of the gas supply line (410) may be provided in a circular shape. The diameter (d1) of the inner surface of the gas supply line (410) may be determined so that the plurality of injection holes (640) do not interfere with the extension line of the inner surface of the gas supply line (410) toward the injection plate (620). For example, among the plurality of injection holes (640), the central injection hole arranged in the center and the radial injection holes arranged radially first from the central injection hole may be included in the inner area of ​​the extension line.

[0085] If the extension line of the inner surface of the gas supply line (410) and the injection hole (640) interfere, a vortex may be formed around the injection hole (640), preventing normal diffusion of the process gas. Since the extension line of the inner surface of the gas supply line (410) and the injection hole (640) do not interfere, the injection hole (640) included in the inner area of ​​the extension line can directly inject the process gas supplied through the gas supply line (410), and the remaining injection holes (640) can inject the process gas diffused in the first diffusion space (630).

[0086] Fig. 6 illustrates a deposition pattern of a thin film (TF) deposited on a substrate (W). Fig. 6 illustrates a thin film (TF) having a thickness that decreases from the center to the edge of the substrate (W). Thin films (TF) of different thicknesses can be deposited on the substrate (W) in a generally circular shape.

[0087] As described above, the gas supply line (410) can supply a source purge gas and a reaction purge gas. The source purge gas and the reaction purge gas, like the source gas and the reaction gas, can be supplied to the process chamber (100) through the showerhead (600) and the plasma generator (700). The source purge gas and the reaction purge gas can also be supplied at a density that decreases as they progress from the center to the edge of the substrate (W), thereby allowing a circular thin film pattern having different thicknesses to be distinctly formed.

[0088] Fig. 7 is a drawing showing a showerhead and a plasma generator having a conical inclined guide surface, and Fig. 8 is a drawing showing a showerhead and a plasma generator having a trumpet-shaped inclined guide surface.

[0089] Referring to FIGS. 7 and 8, the showerhead (600) may include a back plate (610) and a spray plate (620).

[0090] The back plate (610) may be connected to a gas supply line (410). The process gas transported through the gas supply line (410) may be supplied into the interior of the showerhead (600) through a supply hole formed in the back plate (610). A plurality of injection holes (640) may be formed in the injection plate (620). The showerhead (600) may inject the process gas through the plurality of injection holes (640).

[0091] The back plate (610) may include an inclined guide surface (611) whose distance from the injection plate (620) decreases as it progresses toward the edge from the point where it is connected to the gas supply line (410). For example, the inclined guide surface (611) may be provided in a cone shape as illustrated in FIG. 7 or in a trumpet shape as illustrated in FIG. 8.

[0092] The back plate (610) may include a parallel guide surface (612) whose distance from the spray plate (620) remains the same as it progresses from the inclined guide surface (611) to the edge. Meanwhile, according to some embodiments of the present invention, the back plate (610) may not include the parallel guide surface (612). In such a case, the back plate (610) may include only the inclined guide surface (611). Hereinafter, the back plate (610) will be described mainly with reference to including both the inclined guide surface (611) and the parallel guide surface (612).

[0093] The diameter (d3) of the first diffusion space (630) may be formed to be equal to or smaller than the diameter (d4) of the second diffusion space (730). For example, the diameter (d3) of the first diffusion space (630) may be 300 mm, and the diameter (d4) of the second diffusion space (730) may be 305 mm.

[0094] The diameter (d2) of the inclined guide surface (611) may be 190 to 210 mm. Meanwhile, when the parallel guide surface (612) is not provided, the diameter (d2) of the inclined guide surface (611) may be 300 mm, similar to the diameter (d3) of the first diffusion space (630).

[0095] The cross-section (d1) of the inner surface of the gas supply line (410) may be provided in a circular shape. The diameter (d1) of the inner surface of the gas supply line (410) may be determined so that the plurality of injection holes (640) do not interfere with the extension line of the inner surface of the gas supply line (410) toward the injection plate (620). Among the plurality of injection holes (640), the central injection hole arranged in the center and the radial injection holes arranged radially first from the central injection hole may be included in the inner area of ​​the extension line.

[0096] The injection plate (620) may include 2,000 to 6,000 injection holes (640). The diameter (d5) of the injection holes (640) may be 1 to 1.2 mm, and the length (h4) of the injection holes (640) may be 12 to 15 mm. Meanwhile, the diameter (d5) of the injection holes (640) included in the inner region of the extension line of the inner surface of the gas supply line (410) may be formed smaller than the diameters (d5) of other injection holes (640). For example, the diameter (d5) of the injection holes (640) included in the inner region of the extension line of the inner surface of the gas supply line (410) may be 0.4 to 1.2 mm.

[0097] The height (h1) between the outlet of the gas supply line (410) and the injection plate (620) may be 8 to 12 mm, the height (h3) between the parallel guide surface (612) and the injection plate (620) may be 4 to 6 mm, and the height (h2) between the injection plate (620) and the plasma generation plate (720) may be 10 to 20 mm.

[0098] The plasma generating plate (720) may include 300 to 500 through holes (740). The diameter (d6) of the through holes (740) may be 2 to 6 mm, and the length (h5) of the through holes (740) may be 25 to 60 mm.

[0099] Figure 9 is a drawing showing an injection hole (640) including a first diameter expansion section in which the diameter gradually increases.

[0100] Referring to FIG. 9, each of the plurality of injection holes (640) provided in the injection plate (620) may include a first diameter maintenance section (641) and a first diameter expansion section (642).

[0101] The first diameter maintenance section (641) represents a section in which the diameter is maintained the same, and the first diameter expansion section (642) represents a section that is formed by extending from the first diameter maintenance section (641) and has a larger diameter than the first diameter maintenance section (641).

[0102] The length of the first diameter maintenance section (641) is formed to be longer than the length of the first diameter expansion section (642), and the diameter of the first diameter expansion section (642) can gradually increase as it moves away from the first diameter maintenance section (641).

[0103] The process gas diffused in the first diffusion space (630) may enter the first diameter maintenance section (641) of the injection hole (640) and then be discharged from the injection hole (640) while expanding in the first diameter expansion section (642). As the process gas is expanded and injected in the injection hole (640), the process gas may be more effectively diffused in the second diffusion space (730).

[0104] FIG. 10 is a drawing showing a through hole including a second diameter expansion section with a gradually increasing diameter, and FIG. 11 is a drawing showing a through hole including a second diameter expansion section with a larger diameter than the second diameter maintenance section.

[0105] Referring to FIGS. 10 and 11, each of the plurality of through holes (740) provided in the plasma generating plate (720) may include a second diameter maintenance section (741) and a second diameter expansion section (742).

[0106] The second diameter maintenance section (741) represents a section in which the diameter is maintained the same, and the second diameter expansion section (742) represents a section that is formed by extending from the second diameter maintenance section (741) and has a larger diameter than the second diameter maintenance section (741).

[0107] The length of the second diameter maintenance section (741) is formed to be longer than the length of the second diameter expansion section (742), and the diameter of the second diameter expansion section (742) may gradually increase as it moves away from the second diameter maintenance section (741) as illustrated in FIG. 10, or may be maintained constant regardless of the distance from the second diameter maintenance section (741) as illustrated in FIG. 11.

[0108] The process gas diffused in the second expansion space enters the second diameter maintenance section (741) of the through hole (740) and is converted into a process material in a plasma state, and the process material can be discharged from the through hole (740) while expanding in the second diameter expansion section (742). As the process material is sprayed while expanding in the through hole (740), the process material can be settled at a uniform density over the entire area of ​​the substrate (W).

[0109] Figure 12 is a drawing showing a gap formed in the substrate.

[0110] Referring to FIG. 12, a gap (G) may be formed in the substrate (W). For example, the gap (G) may be a spacing between wires.

[0111] A thin film (TF) may be formed as an interlayer insulating film on a substrate (W). In this case, it is desirable for the process material for forming the thin film (TF) to penetrate and fill the gap (G). On the other hand, if the spacing between the wires is fine, it may not be easy for the process material to penetrate into the gap (G), and thus the proper formation of the thin film (TF) may not be performed. In particular, if the diameter (D) of the entrance to the gap (G) is small and the depth (H) of the gap (G) is deep, it may not be easy for the process material to penetrate into the gap (G). This is because the thin film (TF) formed at the entrance to the gap (G) blocks the entrance, thereby preventing the process material from penetrating into the interior of the gap (G).

[0112] The plasma generating unit (700) of the substrate processing device (10) according to an embodiment of the present invention can generate a process material having a relatively high horizontal movement component. By using a process material having a high horizontal movement component, deposition of a thin film (TF) at the entrance of the gap (G) is prevented, allowing the process material to penetrate into the interior of the gap (G), and allowing the gap (G) to be filled with the process material.

[0113] Figure 13 is a drawing showing a thin film being deposited on a substrate, and Figure 14 is a drawing for explaining the process of depositing a thin film on a substrate.

[0114] Referring to Fig. 13, a process material (PM) can be supplied to a substrate (W) for deposition of a thin film (TF). The process material (PM) can form a thin film (TF) on the surface of the substrate (W).

[0115] Figure 13 (a) shows that a process material (PM) is supplied to a substrate (W), and (b) shows that a thin film (TF) is deposited on the substrate (W).

[0116] The process material (PM) may have a relatively high horizontal movement component. Since the process material (PM) is supplied without an electric field being formed inside the process chamber (100), the process material (PM) may have a relatively low vertical movement component. Because the process material (PM) has a relatively high horizontal movement component, a high contact opportunity is formed between the process material (PM) that has penetrated into the gap (G) and the sidewall of the gap (G), and the deposition efficiency of the thin film (TF) on the sidewall of the gap (G) may be improved.

[0117] Referring to Figure 14, as the process cycle is repeated, a thin film (TF) can be deposited on the substrate (W) and the gap (G) can be filled with a process material (PM).

[0118] Figures 14(a), (b), and (c) illustrate that the process material (PM) penetrates into the interior of the gap (G) and fills the gap (G). The process material (PM) having a relatively high horizontal movement component can fill the entrance of the gap (G) after filling the interior of the gap (G). This deposition method prevents the formation of voids or seams within the gap (G), and enables normal deposition of a thin film (TF).

[0119] Figure 15 is a drawing showing the deposition rate, and Figure 16 is a drawing showing the etching rate.

[0120] Referring to FIG. 15, the deposition rate can be formed higher when the plasma generating unit (700) is positioned on the lower side of the showerhead (600) compared to when the plasma generating unit (700) is positioned on the upper side of the showerhead (600).

[0121] Figure 15 (a) shows the deposition rate when the plasma generating unit (700) is positioned above the showerhead (600), and Figure 15 (b) shows the deposition rate when the plasma generating unit (700) is positioned below the showerhead (600). Here, the deposition rate represents the thickness of the thin film (TF) deposited on the substrate (W) per process cycle, and the higher the deposition rate, the higher the productivity.

[0122] When the plasma generating unit (700) is positioned above the showerhead (600), the process material (PM) discharged from the plasma generating unit (700) may escape from the plasma state by colliding with the surface of the showerhead (600). In this case, some of the process material (PM) discharged from the plasma generating unit (700) may not reach the substrate (W) and may be lost. In contrast, when the plasma generating unit (700) is positioned below the showerhead (600), the process material (PM) discharged from the plasma generating unit (700) moves without any particular obstruction, so the loss rate of the process material (PM) may be reduced.

[0123] As the process material (PM) loss rate is reduced, a higher density of process material (PM) can reach the substrate (W). As a result, the etching rate (Wet Etch Rate) can be formed lower when the plasma generation unit (700) is positioned on the lower side of the showerhead (600) compared to when the plasma generation unit (700) is positioned on the upper side of the showerhead (600), as illustrated in FIG. 16.

[0124] Figure 16 (a) shows the etching rate when the plasma generating unit (700) is positioned on the upper side of the showerhead (600), and Figure 16 (b) shows the etching rate when the plasma generating unit (700) is positioned on the lower side of the showerhead (600). Here, the etching rate represents the thickness of the thin film (TF) etched from the substrate (W) per unit time, and the lower the etching rate, the higher the quality of the thin film (TF) can be considered.

[0125] In addition, when the plasma generating unit (700) is disposed on the lower side of the showerhead (600), the process gas diffused in the first diffusion space (630) is converted into plasma into the process material (PM) after being additionally diffused in the second diffusion space (730), so that the plasma generating unit (700) can spray the process material (PM) over a wider range. Accordingly, the uniformity of the thin film (TF) deposited on the substrate (W) can be improved when the plasma generating unit (700) is disposed on the lower side of the showerhead (600) compared to when the plasma generating unit (700) is disposed on the upper side of the showerhead (600).

[0126] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical concept or essential features thereof. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

Claims

1. A process chamber that provides a process processing space for the substrate process; A showerhead including a plurality of injection holes and injecting process gas through the plurality of injection holes; and It includes a plurality of through holes that form an electric field by supplied RF power, and includes a plasma generating unit that converts process gas supplied from a showerhead into process material in a plasma state. A substrate processing device in which the plasma generating unit is positioned at the lower side of the shower head.

2. In paragraph 1, A substrate processing device in which the plurality of injection holes and the plurality of through holes are arranged so as not to overlap each other in the direction in which the process gas passes through the plurality of injection holes.

3. In paragraph 1, The diameter of the plurality of through holes is formed to be larger than the diameter of the plurality of injection holes, The length of the plurality of penetration holes is formed longer than the length of the plurality of injection holes, A substrate processing device in which the number of the plurality of through holes is formed less than the number of the plurality of injection holes.

4. In paragraph 1, Further comprising a gas supply line providing a transport path for process gas supplied to the shower head; The above gas supply line is a substrate processing device connected to the center of the above showerhead.

5. In paragraph 4, The above shower head, a back plate connected to the above gas supply line; and It includes a spray plate having a plurality of spray holes formed therein, A substrate processing device wherein the back plate includes an inclined guide surface whose distance from the injection plate decreases as it advances toward the edge from the point connected to the gas supply line.

6. In paragraph 5, A substrate processing device in which the above-mentioned inclined guide surface is provided in a cone or trumpet shape.

7. In paragraph 5, A substrate processing device wherein the back plate includes a parallel guide surface in which the distance from the spray plate is maintained the same as it advances toward the edge of the inclined guide surface.

8. In paragraph 4, The cross-section of the inner surface of the above gas supply line is provided in a circular shape, A substrate processing device in which the diameter of the inner surface of the gas supply line is determined so that the plurality of injection holes do not interfere with the extension of the inner surface of the gas supply line toward the injection plate.

9. In paragraph 8, The above plurality of injection holes are formed in the injection plate in a radial pattern, A substrate processing device in which a central injection hole positioned in the center of the plurality of injection holes and a first radial injection hole positioned radially from the central injection hole are included in the inner area of ​​the extension line.

10. In paragraph 9, A substrate processing device in which the diameter of an injection hole included in the inner area of ​​the extension line among the plurality of injection holes is formed smaller than the diameter of other injection holes.

11. In paragraph 1, The showerhead and the plasma generating unit each include a first diffusion space and a second diffusion space for diffusion of process gas, A substrate processing device in which the diameter of the first diffusion space is formed to be equal to or smaller than the diameter of the second diffusion space.

12. In paragraph 1, Each of the above plurality of injection holes, A first diameter maintenance section in which the diameter remains the same; and A substrate processing device including a first diameter expansion section formed by extending from the first diameter maintenance section and having a larger diameter than the first diameter maintenance section.

13. In paragraph 12, A substrate processing device in which the diameter of the first diameter expansion section gradually increases as it moves away from the first diameter maintenance section.

14. In paragraph 13, A substrate processing device in which the length of the first diameter maintenance section is formed longer than the length of the first diameter expansion section.

15. In paragraph 1, The above plurality of through holes are, a second diameter maintenance section in which the diameter remains the same; and A substrate processing device including a second diameter expansion section formed by extending from the second diameter maintenance section and having a larger diameter than the second diameter maintenance section.

16. In paragraph 15, A substrate processing device in which the diameter of the second diameter expansion section gradually increases as it moves away from the second diameter maintenance section.

17. In paragraph 15, A substrate processing device in which the length of the second diameter maintenance section is formed longer than the length of the second diameter expansion section.

18. In paragraph 1, The above plasma generating unit is a substrate processing device that converts process gas into process material in a plasma state using a hollow cathode plasma (HCP) method.

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