Substrate edge etching apparatus

Abstract

The present application discloses a substrate edge etching apparatus, comprising: a bearing mechanism, a heating mechanism, an etching solution supply mechanism, and a flow guide mechanism. The bearing mechanism is used for bearing a substrate. The heating mechanism is coaxially arranged on the peripheral side of the bearing mechanism; the upper surface of the heating mechanism is lower than the upper surface of the bearing mechanism; and the heating mechanism comprises a plurality of gas holes, used for providing a heated gas between the upper surface of the heating mechanism and the lower surface of the substrate through the plurality of gas holes. The etching solution supply mechanism is used for spraying an etching solution to a substrate edge. The flow guide mechanism is arranged below the substrate edge; the plurality of gas holes are located on the inner side of the flow guide mechanism; the flow guide mechanism is configured to have an overflow gap with the lower surface of the substrate edge; and the height of the overflow gap in a vertical direction is less than the distance between the upper surface of the heating mechanism and the lower surface of the substrate. The present application achieves the technical effects of rapid temperature adjustment of substrate edges, thereby increasing the etching rate of the substrate edges, and thus shortening the substrate processing time.

Description

Substrate edge etching device TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor equipment, and further relates to a substrate edge etching device. BACKGROUND

[0002] In the semiconductor manufacturing process, due to the substantial increase in process steps such as thin film deposition, photolithography, etching and chemical mechanical polishing, the accumulation of by-products and residues (such as dielectric, metal, organic, silicon nitride and silicon oxide thin film materials) at the edge of the substrate is inevitable, which leads to a decrease in the yield of the substrate.

[0003] In the prior art, dry etching and wet etching are generally used to solve the problem of removing edge by-products and residues. The edge wet etching process has good etching uniformity, controllable etching selectivity and low chemical consumption compared with the edge dry etching process. However, in the edge wet etching process, the temperature of the edge of the substrate has a great influence on the etching rate, and therefore, how to quickly adjust the temperature of the edge of the substrate becomes a key problem in the edge wet etching process. SUMMARY

[0004] In view of the above technical problems, the present application aims to achieve rapid temperature adjustment of the edge of the substrate, thereby improving the etching rate of the edge of the substrate and shortening the processing time of the substrate.

[0005] To achieve the above-mentioned purpose, the present application provides a substrate edge etching device.

[0006] In some embodiments, the substrate edge etching device comprises a carrying mechanism for carrying a substrate, a heating mechanism coaxially arranged on the side of the carrying mechanism, the upper surface of the heating mechanism being lower than the upper surface of the carrying mechanism, the heating mechanism comprising a plurality of gas holes for providing heating gas between the upper surface of the heating mechanism and the lower surface of the substrate through the plurality of gas holes, an etching liquid supply mechanism for spraying etching liquid to the edge of the substrate, and a flow guide mechanism arranged below the edge of the substrate, the plurality of gas holes being located on the inner side of the flow guide mechanism, the flow guide mechanism being configured to have an overflow gap between the lower surface of the edge of the substrate, the height of the overflow gap in the vertical direction being less than the distance between the upper surface of the heating mechanism and the lower surface of the substrate.

[0007] Compared with the prior art, the application sets the flow guide mechanism under the edge of the substrate, and forms the overflow gap between the flow guide mechanism and the lower surface of the edge of the substrate, and then guides the heated gas to gather on the lower surface of the edge of the substrate and then discharge, so as to improve the temperature adjusting rate of the edge of the substrate, thereby realizing the rapid temperature adjustment of the edge of the substrate, improving the etching rate of the edge of the substrate, and shortening the processing time of the substrate.

[0008] SUMMARY

[0009] The above-mentioned characteristics, technical features, advantages and implementation manners of the application will be further described in the following preferred embodiments in a clear and understandable manner combined with the drawings.

[0010] FIGS. 1a-1c are schematic diagrams of a substrate edge etching device according to different embodiments of the application;

[0011] FIG. 2 is a schematic diagram of a three-dimensional structure of a flow guide mechanism according to an embodiment of the application;

[0012] FIGS. 3a-3d are top views of flow guide mechanisms according to different embodiments of the application.

[0013] Preferred embodiments of the application

[0014] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the specific embodiments of the application will be described below with reference to the drawings. Obviously, the drawings in the following description are only some embodiments of the application, and for those skilled in the art, other drawings can be obtained from these drawings without creative labor, and other embodiments can also be obtained.

[0015] As shown in FIG. 1a, a substrate edge etching device 100 according to an embodiment of the application is disclosed. The substrate edge etching device 100 comprises a carrying mechanism 110, a heating mechanism 120, an etching liquid supply mechanism 130 and a flow guide mechanism 140.

[0016] The carrying mechanism 110 is used for carrying the substrate 10, and is preferably a vacuum chuck. The heating mechanism 120 is coaxially arranged at the periphery of the carrying mechanism 110, and the upper surface of the heating mechanism 120 is lower than the upper surface of the carrying mechanism 110. The heating mechanism 120 comprises a plurality of air holes 1211 which are distributed around the carrying mechanism 110, and are used for providing a heating gas (for example, nitrogen) between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10 during the heating of the substrate 10. The etching liquid supply mechanism 130 is used for spraying etching liquid to the edge of the substrate 10 during the edge etching of the substrate 10. The flow guide mechanism 140 is arranged below the edge of the substrate 10, and the plurality of air holes 1211 are located inside the flow guide mechanism 140. The flow guide mechanism 140 is configured to have an overflow gap m between the lower surface of the edge of the substrate 10, and the height of the overflow gap m in the vertical direction is less than the distance n between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10, so as to reduce the flow area of the heating gas, increase the flow rate of the heating gas, and further improve the heat exchange efficiency between the heating gas and the edge of the substrate 10. During the heating of the substrate 10, the heating gas flows from inside to outside between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10, and is gathered to the lower surface of the edge of the substrate 10 during the flow through the overflow gap m, and then flows out of the overflow gap m.

[0017] For the existing substrate edge etching device, after the heating mechanism inputs the heating gas between the upper surface of the heating mechanism and the lower surface of the substrate, the heating gas flows outward, and gradually transfers heat to the substrate during the flow. Therefore, the heating gas has heat loss during the outward flow, and when the heating gas flows below the edge of the substrate, the heating gas can only heat the edge of the substrate by residual heat, which causes the temperature adjustment speed of the edge of the substrate to be slow, and further affects the edge etching rate of the substrate. In addition, when the heating gas flows below the edge of the substrate, the heating gas begins to diffuse outward and downward at the same time, which causes the heating gas to not fully contact the lower surface of the edge of the substrate, and further affects the heating effect of the heating gas on the edge of the substrate.

[0018] In the present embodiment, the heating mechanism 120 provides the heating gas between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10 through the air holes 1211. The heating gas flows outward, and when the heating gas flows through the overflow gap m between the flow guide mechanism 140 and the lower surface of the edge of the substrate 10, the heating gas is gathered to the lower surface of the edge of the substrate 10 by the flow guide mechanism 140, so as to make the heating gas fully contact the edge of the substrate 10, and improve the temperature adjustment speed of the edge of the substrate 10.

[0019] Specifically, the height of the overflow gap m is 0.5-1mm, so that the heating gas can fully contact with the lower surface of the edge of the substrate 10. In addition, the distance n between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10 is 1-1.5mm, so that the heating gas has enough space between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10, can fully diffuse to each position of the lower surface of the substrate 10, uniformly heat the lower surface of the substrate 10, and prevent the heating gas sprayed by the air hole 1211 from having a large impact force on the lower surface of the substrate 10, causing the substrate 10 to be unstable.

[0020] Preferably, as shown in FIG. 2, the flow guide mechanism 140 is in the shape of a ring, and the upper surface of the flow guide mechanism 140 is configured with a plurality of flow guide grooves 141 extending from the inner side of the flow guide mechanism 140 to the outer side of the flow guide mechanism 140, wherein the groove bottom surface of the flow guide groove 141 and the bottom surface of the edge of the substrate 10 have a first gap, the upper surface of the flow guide mechanism 140 and the bottom surface of the edge of the substrate 10 have a second gap, and the height of the first gap is greater than the height of the second gap. In this embodiment, the overflow gap includes the first gap and the second gap.

[0021] Preferably, as shown in FIG. 3a, the flow guide groove 141 is configured to extend along a predetermined straight line 1411, and the predetermined straight line 1411 forms an acute angle with the radial direction r of the flow guide mechanism 140, and each flow guide groove 141 is uniformly distributed along the circumferential direction of the flow guide mechanism 140. As shown in FIG. 3b, the flow guide groove 141 is configured in the shape of an arc 1412, and each flow guide groove 141 is uniformly distributed along the circumferential direction of the flow guide mechanism 140. As shown in FIG. 3c, the flow guide groove 141 is configured in the shape of a wave 1413, and each flow guide groove 141 is uniformly distributed along the circumferential direction of the flow guide mechanism 140. As shown in FIG. 3d, the flow guide groove 141 is configured in the shape of a broken line 1415. In the above four embodiments of the flow guide groove 141, the length of the flow guide groove 141 is greater than the ring width of the flow guide mechanism 140, thereby increasing the time for the heating gas to flow through the flow guide groove 141, thereby increasing the contact time of the heating gas with the edge of the substrate 10, and improving the temperature adjustment rate of the edge of the substrate 10.

[0022] Preferably, referring to FIG. 1a, the substrate edge etching device 100 further comprises a rotary driving mechanism 160 (for example: a hollow motor), which is in transmission connection with the bearing mechanism 110, and is used to drive the bearing mechanism 110 and the substrate 10 carried thereby to rotate during edge etching of the substrate 10. It should be noted that in the drawings of the present embodiment, the bearing mechanism 110 can be rotatably installed at the center of the heating mechanism 120, and the heating mechanism 120 remains stationary during driving of the bearing mechanism 110 to rotate.

[0023] Preferably, the guide groove 141 is configured to be inclined to the rotation direction of the bearing mechanism 110. When the rotation driving mechanism 160 drives the bearing mechanism 110 and the substrate 10 carried thereby to rotate, the heating gas between the upper surface of the heating mechanism 120 and the lower surface of the substrate 10 flows in a vortex shape, and the pre-set straight line 1411 is inclined to the rotation direction of the bearing mechanism 110, so that when the heating gas flows to the inner side of the guide mechanism 140, the flow direction of the heating gas is consistent with the extension direction of the guide groove 141 (i.e. the pre-set straight line 1411), thereby increasing the flow rate of the heating gas in the guide groove 141, and further improving the heat exchange efficiency between the heating gas and the edge of the substrate 10.

[0024] In addition, the etching liquid supply mechanism 130 includes a nozzle 131 and a liquid supply part 132, the nozzle 131 and the liquid supply part 132 are connected, the liquid supply part 132 is used to supply the etching liquid to the nozzle 131, and the nozzle 131 is used to spray the etching liquid to the edge of the substrate 10. Wherein, the rotation driving mechanism 160 is used to drive the bearing mechanism 110 to rotate the substrate 10, and the nozzle 131 sprays the etching liquid to the edge of the substrate 10 for etching during the rotation of the substrate 10, thereby removing the by-products and residues of the edge of the substrate 10.

[0025] Preferably, the diameter of the heating mechanism 120 is smaller than the diameter of the substrate 10, and the substrate edge etching device 100 further includes a first cover 150, the first cover 150 is arranged outside the heating mechanism 120, has a cylindrical structure, and the guide mechanism 140 is arranged at the top end of the first cover 150. In addition, as shown in FIG. 1b, in another embodiment of the present application, the first cover 150 and the guide mechanism 140 can be configured to be integrally formed, which is beneficial to reduce the assembly difficulty of the substrate edge etching device 100. As shown in FIG. 1c, in other embodiments of the present application, the diameter of the heating mechanism 120 is not less than the diameter of the substrate 10, and the guide mechanism 140 can be directly arranged at the edge of the upper surface of the heating mechanism 120 to improve the heating effect of the heating gas on the edge of the substrate 10.

[0026] Preferably, the substrate edge etching device 100 further includes a second cover 170, the second cover 170 is arranged outside the first cover 150 in a spaced manner, and the top end of the second cover 170 is provided with an annular baffle 171 towards one side of the bearing mechanism 110, the annular baffle 171 is higher than the substrate 10 carried by the bearing mechanism 110, and is used to collect the etching liquid, and further can be used to prevent the etching liquid from splashing.

[0027] Specifically, the heating mechanism 120 includes, from top to bottom, a heating mechanism body 121, a gas delivery disc 122, a heating disc 123, and a heat insulation disc 124. The heating mechanism body 121 is coaxially arranged on the side of the bearing mechanism 110, the upper surface of the heating mechanism body 121 is lower than the upper surface of the bearing mechanism 110, and the gas holes 1211 are arranged through the heating mechanism body 121. The gas delivery disc 122 is fixed to the lower surface of the heating mechanism body 121, the gas delivery disc 122 is internally provided with a plurality of gas delivery grooves 1221, and the gas delivery grooves 1221 are connected with the external gas supply part 125 for transmitting the heating gas to each gas hole 1211. The heating disc 123 is internally provided with a heating element (such as a resistance wire) for heating the gas delivery disc 122 and the heating gas flowing in the gas delivery grooves 1221. The heat insulation disc 124 is used to isolate the heating disc 123 to prevent the heat generated by the heating disc 123 from affecting other surrounding components.

[0028] In addition, the substrate edge etching device 100 further comprises a lifting mechanism (not shown in the figure), which is in driving connection with the heating mechanism 120 and the first cover body 150 respectively, and is used to drive the heating mechanism 120 and the first cover body 150 to simultaneously lift. During loading or unloading of the substrate 10 by the substrate edge etching device 100, the height of the bearing mechanism 110 remains unchanged, and the lifting mechanism drives the heating mechanism 120 and the first cover body 150 to simultaneously descend to increase the vertical distance between the upper surface of the bearing mechanism 110 and the upper surface of the heating mechanism 120 and the first cover body 150, so as to facilitate the mechanical hand to take and place the substrate 10.

[0029] It should be noted that the above embodiments can be freely combined as needed. The above is only the preferred implementation manner of the present application, and those skilled in the art can make several improvements and refinements without departing from the principles of the present application, and these improvements and refinements should also be considered as the protection scope of the present application.

Claims

1. A substrate edge etching apparatus, characterized in that, include: The support mechanism is used to support the substrate; A heating mechanism is coaxially disposed on the periphery of the supporting mechanism and located below the substrate. The heating mechanism includes a plurality of air holes for supplying heating gas between the upper surface of the heating mechanism and the lower surface of the substrate through the plurality of air holes. An etching solution supply mechanism is used to spray etching solution onto the edge of the substrate; A flow guiding mechanism is disposed below the edge of the substrate, and the plurality of air holes are located inside the flow guiding mechanism. The flow guiding mechanism is configured to have an overflow gap between itself and the lower surface of the edge of the substrate. The height of the overflow gap in the vertical direction is less than the distance between the upper surface of the heating mechanism and the lower surface of the substrate.

2. The substrate edge etching apparatus according to claim 1, characterized in that, The height of the overflow gap is 0.5-1mm.

3. The substrate edge etching apparatus according to claim 1, characterized in that, The distance between the upper surface of the heating mechanism and the lower surface of the substrate is 1-1.5 mm.

4. The substrate edge etching apparatus according to claim 1, characterized in that, The flow guiding mechanism is annular, and its upper surface is provided with a plurality of flow guiding grooves, which extend from the inner side of the flow guiding mechanism to the outer side of the flow guiding mechanism.

5. The substrate edge etching apparatus according to claim 4, characterized in that, The flow channel is configured to extend along a preset straight line, and the preset straight line forms an acute angle with the radial direction of the flow guiding mechanism; And / or the flow channel is constructed in an arc shape; And / or the flow channel is constructed to be wavy; And / or the flow channel is constructed in a zigzag shape.

6. The substrate edge etching apparatus according to claim 1, characterized in that, The diameter of the heating mechanism is smaller than the diameter of the substrate, and the substrate edge etching device further includes: The first cover is disposed on the outside of the heating mechanism, and the flow guiding mechanism is disposed on the top of the first cover.

7. The substrate edge etching apparatus according to claim 6, characterized in that, The first cover and the flow guiding mechanism are integrally formed.

8. The substrate edge etching apparatus according to claim 1, characterized in that, The diameter of the heating mechanism is not less than the diameter of the substrate, and the flow guiding mechanism is disposed at the edge of the upper surface of the heating mechanism.

9. The substrate edge etching apparatus according to claim 6, characterized in that, Also includes: The second cover is spaced apart from the outside of the first cover. The top of the second cover is provided with an annular baffle on the side facing the support mechanism. The annular baffle is higher than the substrate supported by the support mechanism and is used to collect the etching solution.

10. The substrate edge etching apparatus according to claim 1, characterized in that, Also includes: A rotary drive mechanism, which is connected to the support mechanism, is used to drive the support mechanism and the substrate to rotate during edge etching of the substrate.

11. The substrate edge etching apparatus according to claim 10, characterized in that, The flow guiding mechanism is annular, and the upper surface of the flow guiding mechanism is constructed with a plurality of flow guiding grooves, which extend from the inner side of the flow guiding mechanism to the outer side of the flow guiding mechanism. The flow guide channels are each configured to extend along a preset straight line, and the preset straight line forms an acute angle with the radial direction of the flow guide mechanism, and the flow guide channels are configured such that the preset straight line is inclined along the rotation direction of the bearing mechanism.

12. The substrate edge etching apparatus according to claim 1, characterized in that, The heating mechanism, from top to bottom, includes: The main body of the heating mechanism is coaxially disposed on the periphery of the supporting mechanism, and the air hole is disposed through the main body of the heating mechanism; A gas delivery plate is used to deliver the heating gas to each of the gas holes; A heating plate is used to heat the gas delivery plate and the heated gas. A heat insulation plate is used to insulate the heating plate.

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