MEMS mirror, optical apparatus and electric device

Abstract

A MEMS mirror (100). The MEMS mirror (100) comprises a movable component (20) and a fixed component (10), wherein the movable component (20) is formed on the fixed component (10), and is configured to modulate light; and a temperature sensor (5) is provided on the fixed component (10), and is configured to measure the temperature of the movable component (20). By means of arranging the temperature sensor (5) on the fixed component (10) to measure the temperature generated by the movable component (20) during operation, the measurement accuracy of the temperature of the movable component (20) is improved.

Description

MEMS mirror, optical device and electrical equipment

[0001] The present application claims priority to the Chinese patent application No. 202410868273.1, filed on June 28, 2024, and entitled "MEMS mirror, optical device and electrical equipment", the whole content of which is incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the technical field of micro-mirrors, and more particularly, to a MEMS mirror, an optical device and an electrical equipment. BACKGROUND

[0003] The MEMS mirror belongs to a kind of optical MEMS actuator chip, which can deflect and modulate laser beam under the action of driving.Currently, it is widely used in projection, display, optical communication and other scenes. TECHNICAL PROBLEM

[0004] In the related art, the temperature of the MEMS mirror will rise during operation, and the existing detection precision of the temperature of the MEMS mirror is not high, so how to accurately detect the temperature of the MEMS mirror is a technical problem to be solved. TECHNICAL SOLUTION

[0005] The present application aims to provide a MEMS mirror, an optical device and an electrical equipment, which aims to solve the technical problem of low temperature detection precision of the MEMS mirror in the related art.

[0006] In a first aspect, the present application provides a MEMS mirror, comprising:

[0007] A fixed component, wherein a temperature sensor is arranged on the fixed component;

[0008] A movable component arranged on the fixed component, wherein the movable component is used for modulating light, and the temperature sensor is used for detecting the temperature of the movable component.

[0009] Optionally, the movable component comprises:

[0010] A cantilever, wherein a Wheatstone bridge is arranged at the end of the cantilever close to the fixed component; and

[0011] A mirror, wherein the mirror vibrates under the driving of the cantilever.

[0012] Optionally, the circuit connected with the Wheatstone bridge and the circuit connected with the temperature sensor are two independent circuits.

[0013] Optionally, the fixed component is provided with the temperature sensor near the cantilever position.

[0014] Optionally, the movable component includes two cantilevers, and the fixed component is provided with two temperature sensors, and the two temperature sensors are near the corresponding cantilevers; or,

[0015] the movable component includes two cantilevers, and the fixed component is provided with one temperature sensor, and the temperature sensor is between the two cantilevers.

[0016] Optionally, the movable component includes three cantilevers, and the fixed component is provided with three temperature sensors, and the three temperature sensors are near the corresponding cantilevers; or,

[0017] the movable component includes three cantilevers, and the fixed component is provided with two temperature sensors, and each temperature sensor is between two adjacent cantilevers.

[0018] Optionally, the fixed component includes a coil substrate, and the coil substrate is provided with a coil layer.

[0019] The temperature sensor is arranged on the coil substrate and below the coil layer.

[0020] Optionally, the movable component includes a cantilever, and the cantilever includes:

[0021] a first cantilever connected with the coil substrate;

[0022] a second cantilever, one end of the second cantilever is connected with the scanning mirror of the MEMS scanning mirror, and the other end of the second cantilever is connected with the coil substrate;

[0023] The first cantilever and the second cantilever are provided with a Wheatstone bridge at the end near the coil substrate.

[0024] Optionally, the coil substrate is provided with two temperature sensors, one of which is near the Wheatstone bridge arranged on the first cantilever, and the other is near the Wheatstone bridge arranged on the second cantilever.

[0025] Optionally, the temperature sensor is made by ion implantation; or,

[0026] The temperature sensor is made by bonding.

[0027] Optionally, an insulating layer is arranged between the temperature sensor and the coil layer.

[0028] Optionally, the temperature sensor is a thermistor or,

[0029] The temperature sensor is a thermocouple.

[0030] In a second aspect, embodiments of the present application provide an optical device. The optical device comprises the MEMS scanner as described in the first aspect.

[0031] In a third aspect, embodiments of the present application further provide an electrical device. The electrical device comprises the optical device as described in the second aspect. Advantages

[0032] According to embodiments of the present application, by arranging the temperature sensor on the fixed component to detect the temperature generated by the movable component during operation, the detection accuracy of the temperature of the movable component is improved.

[0033] Other features and advantages of the present application will become apparent from the following detailed description of illustrative embodiments thereof, which proceeds with reference to the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0034] Fig. 1 shows a structure diagram 1 of a MEMS scanner according to some embodiments of the present application.

[0035] Fig. 2 shows a structure diagram 2 of a MEMS scanner according to some embodiments of the present application (hidden coil layer).

[0036] Fig. 3 shows a partial structure diagram of a second suspension arm.

[0037] Fig. 4 shows a partial structure diagram of a first suspension arm.

[0038] Fig. 5 shows a structure diagram of a temperature sensor.

[0039] Reference Signs List: 100, MEMS scanner; 10, fixed component; 20, movable component; 21, suspension arm; 1, coil substrate; 2, first suspension arm; 3, second suspension arm; 4, Wheatstone bridge; 5, temperature sensor; 51, measurement end; 6, coil layer; 7, scanner.

[0040] Embodiments of the present application

[0041] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. If a description of the relative arrangement, numerical expressions, and numerical values of components and steps set forth in these embodiments is not specifically stated otherwise, the scope of the present application is not limited thereto.

[0042] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way limiting to the scope of the application or its applications or uses.

[0043] Techniques and devices known to those of ordinary skill in the relevant art can not be discussed in detail herein, but should be considered as part of the specification.

[0044] In all of the examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not limiting. Thus, other examples of the exemplary embodiments can have different values.

[0045] It should be noted that like reference numerals and letters refer to like items throughout the drawings, and once an item is defined in one drawing, it need not be discussed further in subsequent drawings.

[0046] The cantilever of the MEMS scanner is usually only tens of microns thick, and the temperature of the cantilever of the MEMS scanner will quickly rise in the normal working state. Specifically, the cantilever of the MEMS scanner is always in a high-frequency and high-speed reciprocating torsion state, which will continuously convert mechanical energy into internal energy, thus causing the temperature of the cantilever of the MEMS scanner to rise; and the MEMS scanner will directly receive and reflect light when working, and part of the light energy will be converted into internal energy, especially when the light source is a high-energy laser, which will cause the temperature of the MEMS scanner to rise.

[0047] Based on this, the present application provides a MEMS scanner 100, by setting a temperature sensor 5 on the fixed component 10 other than the movable component 20, the temperature detected by the temperature sensor 5 is the temperature generated by the movable component 20 of the MEMS scanner 100 in the working process, and the temperature of the movable component 20 is more accurately tested.

[0048] Referring to FIGS. 1-4, the MEMS scanner 100 includes a movable component 20 and a fixed component 10, the movable component 20 is arranged on the fixed component 10, and the movable component 20 is used for modulating light; the fixed component 10 is provided with a temperature sensor 5, and the temperature sensor 5 is used for detecting the temperature of the movable component 20.

[0049] In some embodiments of the present application, the MEMS scanner 100 includes a movable component 20 and a fixed component 10, that is, the MEMS scanner 100 includes a movable component 20 and an immovable component.

[0050] The movable component 20 is arranged on the fixed component 10, and the movable component 20 includes a cantilever 21 and a scanner 7. For example, the movable component 20 can be arranged on the fixed component 10 by deposition or etching.

[0051] The movable component 20 is the core part of the MEMS scanner 100, and is responsible for modulating the light. Modulating light generally refers to intentionally adjusting or controlling the characteristics of light to meet the needs of specific applications. This can be achieved in various ways, including changing the intensity, direction, color, frequency, phase, or polarization of the light. In this embodiment, the movable component 20 modulates the light through specific motion patterns. These motions can include rotation, tilting, or translation, etc., to change the propagation direction and phase of the light.

[0052] The fixed component 10 plays a role in supporting and stabilizing the movable component 20 in the MEMS scanner 100. The fixed component 10 generally includes a coil base 1 and other fixedly arranged bases, which ensure the stability and reliability of the movement of the movable component 20.

[0053] In some embodiments, a temperature sensor 5 is arranged on the fixed component 10 to monitor the temperature of the movable component 20 in real time. Since the movable component 20 generates heat during operation, and excessive temperature can affect its performance (such as accuracy, stability, etc.), temperature monitoring is needed.

[0054] Since the temperature sensor 5 is arranged on the fixed component 10, the temperature sensor 5 is not affected by the movable component 20, and the temperature detected by the temperature sensor 5 during the operation of the MEMS scanner 100 is the temperature generated by the movable component 20 during movement, improving the detection accuracy of the temperature of the movable component 20.

[0055] Therefore, in some embodiments of the present application, by arranging the temperature sensor 5 on the fixed component 10 to detect the temperature generated by the movable component 20 during operation, the detection accuracy of the temperature of the movable component 20 is improved.

[0056] In some embodiments, referring to FIGS. 1 and 2, the movable component 20 includes a cantilever 21 and a scanner 7, the scanner 7 vibrates under the drive of the cantilever 21, and the cantilever 21 is provided with a Wheatstone bridge 4 near the end of the fixed component 10.

[0057] In some embodiments, the movable component 20 of the MEMS scanner 100 includes a cantilever 21 and a scanner 7, and the cantilever 21 of the MEMS scanner 100 can be a single-axis cantilever, a dual-axis cantilever, or a three-axis cantilever. Generally, referring to FIGS. 1 and 2, the MEMS scanner 100 includes two groups of cantilevers 21. The scanner 7 can be twisted and vibrated around the cantilevers 21 under the common drive of the two groups of cantilevers 21, and then modulate the light to realize the function of scanning or imaging.

[0058] For example, in the case of a single-axis cantilever of the MEMS scanner 100, a Wheatstone bridge 4 is arranged at the end of the single-axis cantilever near the fixed component 10.

[0059] In the case that the cantilever 21 of the MEMS scanner 100 is a biaxial cantilever, the Wheatstone bridge 4 can be arranged on each of the biaxial cantilevers 21; or the Wheatstone bridge 4 can be arranged on one of the biaxial cantilevers 21.

[0060] In the case that the cantilever 21 of the MEMS scanner 100 is a triaxial cantilever, the Wheatstone bridge 4 can be arranged on each of the triaxial cantilevers 21; or the Wheatstone bridge 4 can be arranged on one or two of the triaxial cantilevers 21.

[0061] In some embodiments, the Wheatstone bridge 4 is arranged on the cantilever 21 to detect the pressure generated by the cantilever 21 in the case of torsion and the like. Specifically, the Wheatstone bridge 4 is arranged at the end of the cantilever 21 close to the fixed component 10, i.e., the root of the cantilever 21.

[0062] Specifically, by using the Wheatstone bridge 4 to detect the pressure generated by the movement of the cantilever 21, real-time monitoring and feedback control of the movement of the cantilever 21 can be achieved, thereby improving the stability and reliability of the system. In addition, in some embodiments, the MEMS scanner 100 integrates the Wheatstone bridge 4 for monitoring the torsion pressure of the cantilever 21 and the temperature sensor 5 for detecting the temperature of the movable component 20 (including the cantilever 21), so that the running state of the MEMS scanner 100 can be comprehensively monitored in real time in terms of temperature and pressure. By adjusting and compensating the size of the driving signal (e.g., the output signal of the driver) according to the real-time changes in temperature and pressure, it can be ensured that the MEMS scanner 100 can work normally under different temperature conditions.

[0063] In some embodiments, the Wheatstone bridge 4 is arranged at the end of the cantilever 21 close to the fixed component 10. Specifically, referring to FIGS. 1 and 2, the end of the cantilever 21 is the end connected to the fixed component 10. When the Wheatstone bridge 4 is arranged at the end of the cantilever 21 close to the fixed component 10, it will not affect the torsion and the like of the cantilever 21 to some extent, and thus will not affect the normal work of the MEMS scanner 100. In addition, the end of the cantilever 21 close to the fixed component 10 is usually the area where the cantilever 21 is most stressed, so installing the Wheatstone bridge 4 at this position can effectively detect the pressure changes generated by the movement of the cantilever 21. Specifically, when the cantilever 21 is subjected to external forces, the end of the cantilever 21 close to the fixed component 10 will first be affected by these forces and will deform accordingly. Since the Wheatstone bridge 4 is arranged at the end of the cantilever 21 close to the fixed component 10, this deformation will directly cause changes in the resistance values of the piezoresistive strips in the bridge. By measuring the changes in the voltage or current at the output end of the bridge, the magnitude of the pressure acting on the cantilever 21 can be accurately inferred.

[0064] In some embodiments, the circuit connected with the Wheatstone bridge 4 and the circuit connected with the temperature sensor 5 are two independent circuits.

[0065] Specifically, in the case that the Wheatstone bridge 4 and the temperature sensor 5 are both provided in the MEMS mirror 100, the temperature sensor 5 is provided in the fixed component 10, and the Wheatstone bridge 4 is provided in the movable component 20, the temperature sensor 5 and the Wheatstone bridge 4 correspond to two independent circuits, i.e., the Wheatstone bridge 4 and the temperature sensor 5 are independently provided in the MEMS mirror 100, and the temperature sensor 5 does not affect the detection of the torsional stress of the cantilever 21 by the Wheatstone bridge 4. For example, the Wheatstone bridge 4 is connected with a first circuit to output the signal detected thereby, and the temperature sensor 5 is connected with a second circuit to output the signal detected thereby, and the first circuit and the second circuit do not affect each other.

[0066] In some embodiments, referring to FIGS. 1 and 2, the fixed component 10 is provided with the temperature sensor 5 near the cantilever 21.

[0067] Specifically, considering the influence of temperature on the performance of the cantilever 21 and the Wheatstone bridge 4 provided thereon, the fixed component 10 is provided with the temperature sensor 5 near the cantilever 21, and the main purpose of this design is to monitor the temperature change of the Wheatstone bridge 4 and its surrounding environment in real time, and accordingly take appropriate measures to ensure the stability and accuracy of the cantilever 21 and the Wheatstone bridge 4 thereon.

[0068] For example, in some embodiments, in the case that the movable component 20 includes one cantilever 21, one temperature sensor 5 can be provided on the fixed component 10, and the temperature sensor 5 is provided near the Wheatstone bridge of the cantilever.

[0069] When the movable component 20 includes two cantilevers 21, the temperature sensors 5 can be specifically provided as follows:

[0070] In some embodiments, in the case that the movable component 20 includes two cantilevers 21, two temperature sensors 5 can be provided on the fixed component 10, and the two temperature sensors 5 are respectively provided near the respective cantilevers 21.

[0071] In some other embodiments, in the case that the movable component 20 includes two cantilevers 21, one temperature sensor 5 can be provided on the fixed component 10, and the temperature sensor 5 is provided near one of the two cantilevers 21 or between the two cantilevers 21.

[0072] When the movable component 20 includes three cantilevers 21, the temperature sensors 5 can be specifically provided as follows:

[0073] In some embodiments, when the movable component 20 includes three cantilevers 21, three temperature sensors 5 can be arranged on the fixed component 10, wherein the three temperature sensors 5 are respectively close to the respective corresponding cantilever 21.

[0074] In some other embodiments, when the movable component 20 includes three cantilevers 21, two temperature sensors or one temperature sensor can be arranged on the fixed component 10.

[0075] In some embodiments, referring to FIG. 1, the fixed component 10 includes a coil substrate 1, which is provided with a coil layer 6; the temperature sensor 5 is arranged on the coil substrate 1 and below the coil layer 6.

[0076] In specific work, the coil layer 6 generates Lorentz force under energization, and the Lorentz force is used as power to drive the cantilever 21 to twist, and then the galvanometer can be driven by the cantilever 21 to realize torsional vibration around the cantilever 21.

[0077] Specifically, the coil substrate 1 is the main component of the fixed component 10, which is used to support and fix the coil layer 6 and the temperature sensor 5. The temperature sensor 5 is arranged on the coil substrate 1, which is used to monitor the temperature of the movable component 20 (including the cantilever 21 and the Wheatstone bridge 4 arranged on the cantilever 21). The temperature sensor 5 can be various types, such as thermocouple, thermistor, semiconductor temperature sensor, etc., depending on the required measurement range and accuracy.

[0078] Referring to FIGS. 1 and 2, when the coil layer 6 and the temperature sensor 5 are arranged on the coil substrate 1 at the same time, the temperature sensor 5 is placed below the coil layer 6, and an insulating layer is arranged between the temperature sensor 5 and the coil layer 6.

[0079] Specifically, the temperature sensor 5 is arranged below the coil layer 6 by ion implantation or bonding. For example, the temperature sensor 5 can be formed on the coil substrate 1 first, and then the coil layer 6 is formed on the coil substrate 1, wherein the coil layer 6 covers the temperature sensor 5.

[0080] The temperature sensor 5 is connected with the corresponding circuit, and then connected with the external signal processing chip, so that the signal processing chip calculates the temperature value detected by the temperature sensor 5.

[0081] In order to avoid the mutual interference between the temperature sensor 5 and the coil layer 6, an insulating layer can be arranged between the temperature sensor 5 and the coil layer 6.

[0082] Specifically, in some embodiments, referring to FIG. 1 and FIG. 2, the movable component 20 comprises a cantilever 21, which comprises a first cantilever 2 and a second cantilever 3, the first cantilever 2 is connected with the coil base 1, one end of the second cantilever 3 is connected with the galvanometer 7, and the other end of the second cantilever 3 is connected with the coil base 1; the first cantilever 2 and the second cantilever 3 are provided with a Wheatstone bridge 4 at a position close to the coil base 1.

[0083] In some embodiments, the coil layer 6 generates Lorentz force under the condition of being electrified, and the Lorentz force is used as power to drive the second cantilever 3 to twist around its axis, and at the same time, the first cantilever 2 is driven to twist around its own axis, and then the galvanometer 7 can realize its torsional vibration around the first cantilever 2 and the second cantilever 3 under the joint driving of the second cantilever 3 and the first cantilever 2.

[0084] In some embodiments, the coil layer 6 generates Lorentz force under the condition of being electrified, and the Lorentz force is used as power to drive the second cantilever 3 to twist around its axis, and at the same time, the first cantilever 2 is driven to twist around its own axis, and then the galvanometer 7 can realize its torsional vibration around the first cantilever 2 and the second cantilever 3 under the joint driving of the second cantilever 3 and the first cantilever 2.

[0085] In addition, the Wheatstone bridge 4 provided on the first cantilever 2 and the second cantilever 3 is arranged close to the coil base 1, and since the temperature sensor 5 is arranged on the coil base 1, the Wheatstone bridge 4 provided on the first cantilever 2 and the second cantilever 3 is arranged close to the temperature sensor 5 of the coil base 1, so as to facilitate the temperature sensor 5 to accurately detect the temperature of the Wheatstone bridge 4.

[0086] In some embodiments, referring to FIG. 2, FIG. 3 and FIG. 4, the coil base 1 is provided with two temperature sensors 5, one of which is close to the Wheatstone bridge 4 provided on the first cantilever 2, and the other is close to the Wheatstone bridge 4 provided on the second cantilever 3.

[0087] In some embodiments, on the coil base 1, a suitable position close to the first cantilever 2 is selected to place the first temperature sensor 5. This temperature sensor 5 accurately detects the temperature change of the first cantilever 2 and the Wheatstone bridge 4 provided on the first cantilever 2. Specifically, the temperature sensor 5 is close to the first cantilever 2 and close to the Wheatstone bridge 4 provided on the first cantilever 2.

[0088] Similarly, on the coil base 1, a position close to the second cantilever 3 is selected to place the second temperature sensor 5. This temperature sensor 5 will be used to monitor the temperature change of the second cantilever 3 and the Wheatstone bridge 4 provided on the second cantilever 3. Specifically, the temperature sensor 5 is close to the second cantilever 3 and close to the Wheatstone bridge 4 provided on the second cantilever 3.

[0089] In some embodiments, the temperature sensor 5 is a thermistor.

[0090] In particular, the temperature sensor 5 is designed as a thermistor. A thermistor is a resistor whose resistance changes significantly with temperature. Since the resistance of the thermistor changes with temperature, it enables it to accurately perceive the temperature change of the Wheatstone bridge 4 and the cantilever 21. By measuring the resistance of the thermistor, the temperature of the Wheatstone bridge 4 and the cantilever 21 can be calculated in real time.

[0091] Optionally, the temperature sensor 5 is a thermocouple. The temperature generated during the movement of the movable component 20 is detected by the thermocouple.

[0092] In particular, referring to FIG. 5, the temperature measurement principle of the thermocouple is based on the Seebeck effect. The anode and cathode of the thermocouple use different semiconductor materials (commonly known as thermocouple wires). One end of the two semiconductor materials is welded together to form a measurement end 51 (also known as a hot end (hot junction) or working end), and the other end is connected to an external circuit, respectively, to form two reference ends (also known as cold ends or free ends). Due to the difference between the anode material and the cathode material, there is a temperature difference between the measurement end 51 and the reference end, which generates a thermoelectric potential in the thermocouple circuit. There is a certain functional relationship (linear correspondence) between the thermoelectric potential and the temperature difference. By measuring the size of the thermoelectric potential, the temperature of the measurement end 51 can be calculated, and the temperature generated during the movement of the movable component 20 can be determined by the temperature of the measurement end 51.

[0093] In some embodiments, the temperature sensor 5 is made by ion implantation.

[0094] In particular, various bonding methods such as direct bonding, anodic bonding, and metal eutectic bonding can be used to form the temperature sensor 5 on the fixed component 10.

[0095] In some other embodiments, the temperature sensor 5 is made by bonding.

[0096] In particular, the temperature sensor is prepared by ion implantation. Ion implantation is a material surface modification technology that changes the properties of materials by accelerating and implanting charged ions (such as boron, phosphorus, arsenic, etc.) into the material. In the preparation process of the MEMS scanner 100, the ion implantation technology is used to form the temperature sensor 5 on the coil substrate 1.

[0097] In some embodiments, the Wheatstone bridge 4 includes N-type piezoresistive strips, which are formed by patterned ion implantation.

[0098] Specifically, by using a graphic ion implantation technology, N-type piezoresistive strips are formed on the substrate of the MEMS mirror 100, which are integrated into a Wheatstone bridge 4 circuit for detecting resistance changes in the circuit, and according to the resistance changes, pressure data in the real-time movement of the cantilever is calculated.

[0099] In some embodiments, the Wheatstone bridge 4 and the corresponding circuit (the circuit corresponding to the temperature sensor is two different circuits) are connected, and then connected with an external signal processing chip, so that the signal processing chip can calculate the pressure data of the cantilever in the movement according to the signals received.

[0100] Some embodiments of the present application also provide an optical device. The optical device includes the MEMS mirror 100 as described above.

[0101] Specifically, the optical device can be an optical projection device, an optical display device, a laser scanning device, etc. When the MEMS mirror 100 is applied to include micro projection technology, it can be widely used in car HUD, car intelligent headlight, car laser radar, car holographic image display, transparent A-pillar, etc. human-vehicle interaction interface system.

[0102] Some embodiments of the present application also provide a power-consuming device. The power-consuming device includes the optical device as described above. For example, the power-consuming device includes but is not limited to a vehicle, a drone, a ship, etc.

[0103] The above embodiments mainly describe the differences between the various embodiments, and the different optimization features between the various embodiments can be combined to form a better embodiment as long as they are not contradictory. Considering the brevity of the text, it will not be repeated here.

[0104] Although some specific embodiments of the present application have been described in detail through examples, those skilled in the art should understand that the above examples are only for illustration, not for limiting the scope of the present application. Those skilled in the art should understand that the above embodiments can be modified without departing from the scope and spirit of the present application. The scope of the present application is defined by the appended claims.

Claims

1. A MEMS galvanometer (100), comprising: A fixing component (10) is provided with a temperature sensor (5); Movable component (20), which is disposed on the fixed component (10), is used to modulate light, and temperature sensor (5) is used to detect the temperature of the movable component (20).

2. The MEMS galvanometer (100) according to claim 1, wherein, The movable part (20) includes: At least one cantilever (21) is provided with a Wheatstone bridge (4) at the end of the at least one cantilever (21) near the end of the fixed member (10). The galvanometer (7) vibrates under the drive of the cantilever (21).

3. The MEMS galvanometer (100) according to claim 2, wherein, The circuit connected to the Wheatstone bridge (4) and the circuit connected to the temperature sensor (5) are two independent circuits.

4. The MEMS galvanometer (100) according to claim 2, wherein, The temperature sensor (5) is provided on the fixed component (10) near the cantilever (21).

5. The MEMS galvanometer (100) according to claim 4, wherein, The movable component (20) includes two cantilever arms (21), and the fixed component (10) is provided with two temperature sensors (5), with the two temperature sensors (5) close to the corresponding cantilever arms (21); or, The movable component (20) includes two cantilever arms (21), and the fixed component (10) is provided with a temperature sensor (5), which is located between the two cantilever arms (21).

6. The MEMS galvanometer (100) according to claim 4, wherein, The movable component (20) includes three cantilever arms (21), and the fixed component (10) is provided with three temperature sensors (5), with the three temperature sensors (5) close to the corresponding cantilever arms (21); or, The movable component (20) includes three cantilever arms (21), and the fixed component (10) is provided with two temperature sensors (5), each of the temperature sensors (5) being located between two adjacent cantilever arms (21).

7. The MEMS galvanometer (100) according to claim 1, wherein, The fixing component (10) includes a coil base (1), and the coil base (1) is provided with a coil layer (6); The temperature sensor (5) is disposed on the coil base (1) and located below the coil layer (6).

8. The MEMS galvanometer (100) according to claim 7, wherein, The movable component includes a cantilever, and the cantilever (21) includes: The first cantilever (2) is connected to the coil base (1); The second cantilever (3) has one end connected to the galvanometer (7) of the MEMS galvanometer (100) and the other end connected to the coil substrate (1). The first cantilever (2) and the second cantilever (3) are provided with Wheatstone bridges (4) at the ends near the coil base (1).

9. The MEMS galvanometer (100) according to claim 8, wherein, The coil base (1) is provided with two temperature sensors (5), one of which is close to the Wheatstone bridge (4) provided on the first cantilever (2), and the other is close to the Wheatstone bridge (4) provided on the second cantilever (3).

10. The MEMS galvanometer (100) according to claim 9, wherein, The temperature sensor (5) is fabricated using ion implantation; or, The temperature sensor (5) is manufactured by bonding.

11. The MEMS galvanometer (100) according to any one of claims 7-10, wherein, An insulating layer is provided between the temperature sensor (5) and the coil layer (6).

12. The MEMS galvanometer (100) according to any one of claims 1-10, wherein, The temperature sensor (5) is a thermistor; or, The temperature sensor (5) is a thermocouple.

13. An optical device comprising a MEMS galvanometer (100) as claimed in any one of claims 1-12.

14. An electrical device comprising the optical device as described in claim 13.

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