Light detection device and electronic apparatus

Abstract

A light detection device according to an embodiment of the present disclosure comprises: a semiconductor layer; an optical layer having a plurality of structures; and a first pixel unit including a first pixel that has a first photoelectric conversion region provided to the semiconductor layer, and two second pixels that each have a second photoelectric conversion region provided to the semiconductor layer and that are positioned diagonally to each other. The first pixel is provided between the optical layer and the first photoelectric conversion region, and has a first filter through which light in a first wavelength band transmits. The optical layer includes a first region corresponding to the first pixel and a portion of the second pixels. Light in the first wavelength band entering the first region is guided to the first filter by the optical layer.

Description

Photodetector and electronic equipment

[0001] The present disclosure relates to photodetection devices and electronic equipment.

[0002] An image sensor has been proposed that has a plurality of nanoposts and a color separation lens array that separates and focuses incident light according to wavelength (Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2022-74093

[0004] In light sensing devices, it is desirable to be able to improve the sensitivity to incident light.

[0005] It would be desirable to provide a photodetector device that can improve sensitivity.

[0006] A photodetector according to an embodiment of the present disclosure includes a semiconductor layer, an optical layer provided above the semiconductor layer and having a plurality of structures, and a first pixel unit including a first pixel having a first photoelectric conversion region provided in the semiconductor layer, and two second pixels diagonally positioned to each other, each having a second photoelectric conversion region provided in the semiconductor layer. The first pixel includes a first filter provided between the optical layer and the first photoelectric conversion region and transmitting light in a first wavelength band. The optical layer includes a first region corresponding to the first pixel and a portion of the second pixel. The optical layer guides light in the first wavelength band incident on the first region to the first filter. An electronic device according to an embodiment of the present disclosure includes an optical system and a photodetector that receives light transmitted through the optical system. The photodetector device includes a semiconductor layer, an optical layer provided above the semiconductor layer and having a plurality of structures, and a first pixel unit including a first pixel having a first photoelectric conversion region provided in the semiconductor layer, and two second pixels diagonally positioned to each other, each having a second photoelectric conversion region provided in the semiconductor layer. The first pixel has a first filter provided between the optical layer and the first photoelectric conversion region that transmits light in a first wavelength band. The optical layer includes first regions corresponding to the first pixel and a portion of the second pixel. The optical layer guides light in the first wavelength band that is incident on the first region to the first filter.

[0007] FIG. 1 is a block diagram illustrating an example of a schematic configuration of an imaging device, which is an example of a photodetector according to an embodiment of the present disclosure. FIG. 2 is a diagram illustrating an example of a pixel unit of the imaging device according to an embodiment of the present disclosure. FIG. 3 is a diagram illustrating an example of a circuit configuration of a pixel of the imaging device according to an embodiment of the present disclosure. FIG. 4 is a diagram illustrating an example of a planar configuration of a pixel of the imaging device according to an embodiment of the present disclosure. FIG. 5 is a diagram illustrating an example of a planar configuration of the imaging device according to an embodiment of the present disclosure. FIG. 6 is a diagram illustrating an example of a cross-sectional configuration of the imaging device according to an embodiment of the present disclosure. FIG. 7 is a diagram illustrating an example of a configuration of the imaging device according to an embodiment of the present disclosure. FIG. 8 is a diagram illustrating an example of a configuration of the imaging device according to an embodiment of the present disclosure. FIG. 9 is a diagram illustrating an example of a cross-sectional configuration of the imaging device according to an embodiment of the present disclosure. FIG. 10 is a diagram illustrating an example of a cross-sectional configuration of the imaging device according to an embodiment of the present disclosure. FIG. 11 is a diagram illustrating an example of a cross-sectional configuration of the imaging device according to an embodiment of the present disclosure. FIG. 12 is a diagram illustrating an example of a configuration of the imaging device according to an embodiment of the present disclosure. FIG. 13 is a diagram illustrating an example of a configuration of the imaging device according to an embodiment of the present disclosure. FIG. 14 is a diagram for explaining a configuration example of an imaging device according to an embodiment of the present disclosure. FIG. 15 is a diagram for explaining a configuration example of an imaging device according to an embodiment of the present disclosure. FIG. 16 is a diagram for explaining an example of signal processing by an image processing unit of an imaging device according to an embodiment of the present disclosure. FIG. 17 is a diagram for explaining an example of signal processing by an image processing unit of an imaging device according to an embodiment of the present disclosure. FIG. 18 is a diagram for explaining an example of signal processing by an image processing unit of an imaging device according to an embodiment of the present disclosure. FIG. 19 is a diagram for explaining an example of signal processing by an image processing unit of an imaging device according to an embodiment of the present disclosure. FIG. 20 is a diagram for explaining a configuration example of an imaging device according to an embodiment of the present disclosure. FIG. 21 is a diagram for explaining a configuration example of an imaging device according to an embodiment of the present disclosure. FIG. 22 is a diagram for explaining a configuration example of an imaging device according to an embodiment of the present disclosure. FIG. 23 is a diagram for explaining a configuration example of an imaging device according to an embodiment of the present disclosure. FIG. 24A is a diagram for explaining an example of a manufacturing method of an imaging device according to an embodiment of the present disclosure.FIG. 24B is a diagram for describing an example of a manufacturing method of an imaging device according to an embodiment of the present disclosure. FIG. 24C is a diagram for describing an example of a manufacturing method of an imaging device according to an embodiment of the present disclosure. FIG. 24D is a diagram for describing an example of a manufacturing method of an imaging device according to an embodiment of the present disclosure. FIG. 24E is a diagram for describing an example of a manufacturing method of an imaging device according to an embodiment of the present disclosure. FIG. 25 is a diagram for describing an example of a cross-sectional configuration of an imaging device according to Modification 1 of the present disclosure. FIG. 26 is a diagram for describing an example of a cross-sectional configuration of an imaging device according to Modification 1 of the present disclosure. FIG. 27 is a diagram for describing an example of a cross-sectional configuration of an imaging device according to Modification 1 of the present disclosure. FIG. 28 is a diagram for describing an example of a configuration of an imaging device according to Modification 1 of the present disclosure. FIG. 29 is a diagram for describing an example of a configuration of an imaging device according to Modification 1 of the present disclosure. FIG. 30 is a diagram for describing an example of a configuration of an imaging device according to Modification 1 of the present disclosure. FIG. 31 is a diagram for describing an example of a configuration of an imaging device according to Modification 2 of the present disclosure. FIG. 32 is a diagram for describing an example of a configuration of an imaging device according to Modification 2 of the present disclosure. FIG. 33 is a diagram for describing an example of a configuration of an imaging device according to Modification 2 of the present disclosure. Fig. 34 is a diagram for explaining a configuration example of an imaging device according to Modification 3 of the present disclosure. Fig. 35 is a block diagram showing a configuration example of an electronic device having an imaging device. Fig. 36 is a block diagram showing an example of a schematic configuration of a vehicle control system. Fig. 37 is an explanatory diagram showing an example of installation positions of an outside-vehicle information detection unit and an imaging unit. Fig. 38 is a diagram showing an example of a schematic configuration of an endoscopic surgery system. Fig. 39 is a block diagram showing an example of the functional configuration of a camera head and a CCU.

[0008] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order: 1. Embodiment 2. Modification 3. Application Example 4. Application Example

[0009] 1. Embodiments Fig. 1 is a block diagram showing an example of a schematic configuration of an imaging device which is an example of a photodetection device according to an embodiment of the present disclosure. Fig. 2 is a diagram showing an example of a pixel unit of the imaging device according to the embodiment. The photodetection device is a device capable of detecting incident light. The imaging device 1 which is an example of a photodetection device has a plurality of pixels P each having a photoelectric conversion unit (photoelectric conversion region), and is configured to photoelectrically convert incident light to generate a signal.

[0010] The imaging device 1 can generate a signal by receiving light that has passed through an optical system (not shown) including an optical lens. The imaging device 1 is configured, for example, using a semiconductor substrate (e.g., a silicon substrate) on which a photoelectric conversion unit of each pixel P is provided. The photoelectric conversion unit of each pixel P is, for example, a photodiode (PD) that is configured to be able to photoelectrically convert light. The photoelectric conversion unit of each pixel P can also be referred to as a photoelectric conversion element or a photoelectric conversion region.

[0011] 1 or 2 , the imaging device 1 has a region (pixel section 100) in which a plurality of pixels P are provided. The pixel section 100 is a pixel array in which a plurality of pixels P are arranged, and can also be called a light-receiving region. The imaging device 1 has, for example, the pixel section 100 in which a plurality of pixels P are two-dimensionally arranged in a matrix as an imaging area. As will be described later, the imaging device 1 has a plurality of pixel units, each of which includes a plurality of pixels P.

[0012] The imaging device 1 captures incident light (image light) from a subject to be measured via an optical system including an optical lens. The imaging device 1 captures an image of the subject formed by the optical lens. The imaging device 1 can generate pixel signals by photoelectrically converting the received light (e.g., visible light, infrared light, etc.). The imaging device 1, which is a photodetector, is a device that can receive light and generate a signal, and can also be called a light-receiving device.

[0013] The imaging device 1 (photodetector) may be configured as an image sensor, for example. The imaging device 1 may be, for example, a complementary metal oxide semiconductor (CMOS) image sensor. The imaging device 1 may have a structure (a stacked structure) formed by stacking multiple semiconductor layers. The imaging device 1 may be used in various electronic devices, such as digital still cameras, video cameras, and mobile phones.

[0014] 2, the incident direction of light from the subject to be measured is the Z-axis direction, the left-right direction on the paper surface perpendicular to the Z-axis direction is the X-axis direction, and the up-down direction on the paper surface perpendicular to the Z-axis and X-axis directions is the Y-axis direction. In the following figures, directions may be indicated based on the direction of the arrow in FIG. 2.

[0015] 1, the imaging device 1 includes, for example, a pixel unit 100 (pixel array), a pixel control unit 111, a signal processing unit 112, a control unit 113, and a processing unit 114. The imaging device 1 is also provided with, for example, a plurality of control lines L1 and a plurality of signal lines L2.

[0016] The control lines L1 are signal lines capable of transmitting signals for controlling the pixels P, and are connected to the pixel control unit 111 and the pixels P of the pixel unit 100. In the example shown in FIG. 1 , the pixel unit 100 is provided with a plurality of control lines L1 for each pixel row made up of a plurality of pixels P aligned in the horizontal direction (row direction). The control lines L1 are configured to transmit control signals for reading out signals from the pixels P.

[0017] The plurality of control lines L1 for each pixel row of the imaging device 1 include, for example, wiring for transmitting signals for controlling transfer transistors, wiring for transmitting signals for controlling selection transistors, wiring for transmitting signals for controlling reset transistors, etc. The control lines L1 can also be referred to as drive lines (or pixel drive lines) for transmitting signals for driving the pixels P.

[0018] The signal line L2 is a signal line capable of transmitting a signal from the pixel P, and is connected to the pixel P of the pixel unit 100 and the signal processing unit 112. In the pixel unit 100, for example, one or more signal lines L2 are wired for each pixel column formed by a plurality of pixels P aligned in the vertical direction (column direction).

[0019] The signal line L2 is electrically connected to the pixel P and configured to be able to transmit a signal output from the pixel P. In the imaging device 1, multiple signal lines L2 may be provided for one pixel column. For example, the imaging device 1 may have multiple signal lines L2 for each pixel column including multiple pixels P.

[0020] The pixel control unit 111 is configured to be able to control each pixel P of the pixel unit 100. The pixel control unit 111 is a control circuit and is configured by a plurality of circuits including, for example, a buffer, a shift register, an address decoder, etc. The pixel control unit 111 generates a signal for controlling the pixel P and outputs it to each pixel P of the pixel unit 100 via a control line L1. The pixel control unit 111 is controlled by the control unit 113 and controls the pixels P of the pixel unit 100.

[0021] The pixel control unit 111 generates signals for controlling the pixels P, such as a signal for controlling the transfer transistor, a signal for controlling the selection transistor, and a signal for controlling the reset transistor of the pixel P, and supplies these signals to each pixel P via a control line L1. The pixel control unit 111 can control reading of pixel signals from each pixel P. The pixel control unit 111 can also be said to be a pixel driving unit configured to be able to drive each pixel P.

[0022] The signal processing unit 112 is configured to be able to perform signal processing of input pixel signals. The signal processing unit 112 is a signal processing circuit and includes, for example, a load circuit, an AD (Analog-Digital) conversion circuit, a horizontal selection switch, etc. The load circuit is, for example, configured by a current source capable of supplying current to the amplification transistor of the pixel P. The load circuit, together with the amplification transistor of the pixel P, forms, for example, a source follower circuit.

[0023] The signal processing unit 112 may have an amplifier circuit configured to be able to amplify signals read out from the pixels P via the signal lines L2. A load circuit, an amplifier circuit, an AD conversion circuit, etc. may be provided for each of the multiple signal lines L2, for example. A load circuit, an amplifier circuit, an AD conversion circuit, etc. may be provided for each pixel column of the pixel unit 100.

[0024] The signals output from each pixel P selected and scanned by the pixel control unit 111 are input to the signal processing unit 112 via a signal line L2. The signal processing unit 112 can perform signal processing such as AD conversion of the signal from the pixel P and CDS (Correlated Double Sampling). The signals from each pixel P transmitted via each signal line L2 are subjected to signal processing by the signal processing unit 112 and output to the processing unit 114.

[0025] The processing unit 114 is configured to be able to perform signal processing on the input signal. The processing unit 114 is a processing circuit, and is configured, for example, by a circuit that performs various types of signal processing on pixel signals. The processing unit 114 may include a processor and a memory. The processing unit 114 performs signal processing on pixel signals input from the signal processing unit 112 and outputs the processed pixel signals. The processing unit 114 can perform various types of signal processing, for example, noise reduction processing, gradation correction processing, etc.

[0026] The control unit 113 is configured to be able to control each unit of the imaging device 1. The control unit 113 receives an externally provided clock, data instructing an operation mode, etc., and can also output data such as internal information of the imaging device 1. The control unit 113 is a control circuit, and has, for example, a timing generator configured to be able to generate various timing signals.

[0027] The control unit 113 controls the driving of the pixel control unit 111, the signal processing unit 112, etc. based on various timing signals (pulse signals, clock signals, etc.) generated by the timing generator. The control unit 113 and the processing unit 114 may be configured integrally.

[0028] The pixel unit 100, pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, etc. may be provided on a single substrate or may be provided separately on multiple substrates. The imaging device 1 may have a stacked structure formed by stacking multiple substrates, for example.

[0029] The pixel control unit 111, the signal processing unit 112, the control unit 113, the processing unit 114, etc. of the imaging device 1 may be provided as, for example, peripheral circuits in a peripheral region of the pixel unit 100. Note that some or all of the signal processing unit 112, the control unit 113, and the processing unit 114 may be configured integrally.

[0030] 3 is a diagram showing an example of the circuit configuration of a pixel of the imaging device according to the embodiment. The pixel P has a photoelectric conversion unit 12 (photoelectric conversion element) and a readout circuit 20. The photoelectric conversion unit 12 is configured to receive light and generate a signal. The readout circuit 20 is configured to be able to output a signal based on the charge generated by photoelectric conversion.

[0031] The photoelectric conversion unit 12 (i.e., photoelectric conversion region) is configured to receive light and generate a signal. The photoelectric conversion unit 12 is configured to be able to generate electric charges through photoelectric conversion. The photoelectric conversion unit 12 can also be called a light receiving unit (light receiving element). In the example shown in FIG. 3 , the photoelectric conversion unit 12 is a photodiode (PD) that converts incident light into electric charges. The photoelectric conversion unit 12 can perform photoelectric conversion to generate electric charges according to the amount of received light.

[0032] The readout circuit 20 includes, for example, a transistor TR, a floating diffusion FD, a transistor AMP, a transistor SEL, and a transistor RST, and can read out pixel signals based on charges photoelectrically converted by the photoelectric conversion unit 12 (photoelectric conversion region).

[0033] The transistor TR is a transfer transistor and is configured to be able to transfer charges photoelectrically converted in the photoelectric conversion unit 12 to the floating diffusion FD. The transistor TR is controlled by a signal STR to electrically connect or disconnect the photoelectric conversion unit 12 and the floating diffusion FD. The transistor TR can transfer charges photoelectrically converted and accumulated in the photoelectric conversion unit 12 to the floating diffusion FD.

[0034] The floating diffusion FD is an accumulation unit configured to be able to accumulate transferred charges. The floating diffusion FD can accumulate charges photoelectrically converted by the photoelectric conversion unit 12. The floating diffusion FD can also be considered a holding unit capable of holding the transferred charges. The floating diffusion FD accumulates the transferred charges and converts them into a voltage according to the capacitance of the floating diffusion FD.

[0035] The transistor AMP is configured to generate and output a signal based on the charge accumulated in the floating diffusion FD. The transistor AMP is an amplifying transistor and can generate and output a signal based on the charge converted by the photoelectric conversion unit 12.

[0036] 3, the gate of the transistor AMP is electrically connected to the floating diffusion FD, and receives the voltage converted by the floating diffusion FD. The drain of the transistor AMP is connected to, for example, a power supply line that supplies a power supply voltage (power supply voltage VDD in the example shown in FIG. 3).

[0037] The source of the transistor AMP is connected to a signal line L2 via a transistor SEL. The transistor AMP is configured to generate a signal based on the charge accumulated in the floating diffusion FD, i.e., a signal based on the voltage of the floating diffusion FD, and output the signal to the signal line L2.

[0038] The transistor SEL is configured to be able to control the output of a pixel signal. The transistor SEL is electrically connected in series to the transistor AMP, for example, as in the example shown in FIG. 3. The transistor SEL is controlled by a signal SSEL and is configured to be able to output a signal from the transistor AMP to a signal line L2. The transistor SEL is a selection transistor and can control the output timing of the pixel signal.

[0039] The transistor SEL is configured to be able to output a signal based on the charge converted by the photoelectric conversion unit 12. The transistor SEL can output a pixel signal of the pixel P to the signal line L2. The transistor SEL may be electrically connected in series between the transistor AMP and a power supply line to which a power supply voltage (power supply voltage VDD in FIG. 3) is applied. The transistor SEL may also be omitted as necessary.

[0040] The transistor RST is configured to be able to reset the voltage of the floating diffusion FD. In the example shown in Fig. 3, the transistor RST is electrically connected to a power supply line to which a power supply voltage VDD is applied, and is configured to reset the charge of the pixel P. The transistor RST is a reset transistor.

[0041] The transistor RST is controlled by a signal SRST and can reset the charge accumulated in the floating diffusion FD and reset the voltage of the floating diffusion FD. The transistor RST electrically connects the power supply line and the floating diffusion FD and can discharge the charge accumulated in the floating diffusion FD. The transistor RST can also discharge the charge accumulated in the photoelectric conversion unit 12 via the transistor TR.

[0042] The readout circuit 20 may be configured to be able to change the conversion gain (i.e., conversion efficiency) when converting electric charge into voltage. For example, the readout circuit 20 may have a transistor (switching transistor) used to set the conversion gain. As an example, the switching transistor is electrically connected between the floating diffusion FD and the transistor RST.

[0043] In the readout circuit 20, when the switching transistor is turned on, the capacitance added to the floating diffusion FD of the pixel P increases, and the conversion gain (conversion efficiency) when converting charge to voltage is switched. The switching transistor can change the conversion gain by switching the capacitance connected to the gate of the transistor AMP.

[0044] The above-mentioned transistor TR (transfer transistor), transistor AMP (amplification transistor), transistor SEL (selection transistor), transistor RST (reset transistor), and switching transistor are each, for example, a MOS transistor (MOSFET) having gate, source, and drain terminals.

[0045] 3, the transistors TR, AMP, SEL, and RST are each configured as an NMOS transistor. The transistors of the pixel P may be configured as PMOS transistors.

[0046] The pixel control unit 111 (see Figure 1) of the imaging device 1 supplies control signals to the gates of the transistors TR, SEL, RST, switching transistors, etc. of each pixel P via the control line L1 described above, turning the transistors on (conducting state) or off (non-conducting state).

[0047] The multiple control lines L1 for each pixel row of the imaging device 1 include, for example, a wiring for transmitting a signal STR that controls the transistor TR, a wiring for transmitting a signal SSEL that controls the transistor SEL, and a wiring for transmitting a signal SRST that controls the transistor RST.

[0048] The transistors TR, SEL, RST, and switching transistors are controlled to be turned on and off by the pixel control unit 111. The pixel control unit 111 controls the readout circuit 20 of each pixel P to output a pixel signal from each pixel P to the signal line L2. The pixel control unit 111 can control the reading out of the pixel signal of each pixel P to the signal line L2.

[0049] The imaging device 1 may have a configuration in which a plurality of pixels P share one readout circuit 20. For example, in the imaging device 1, the readout circuit 20 may be provided for a plurality of pixels P. A readout circuit 20 is arranged for each of a plurality of pixels P, and the plurality of pixels P share one readout circuit 20. As an example, a 2×2 pixel array consisting of four adjacent pixels P may share one readout circuit 20.

[0050] 4 is a diagram illustrating an example of the planar configuration of a pixel of an imaging device according to an embodiment. Fig. 4 shows an example of the planar configuration of an optical layer 70 provided above the photoelectric conversion unit 12. As will be described later, the optical layer 70 is a layer having a plurality of structures 51, and is provided so as to be stacked on the semiconductor layer 10 in which the photoelectric conversion unit 12 is provided.

[0051] As shown in the example of Fig. 4, the pixel P of the imaging device 1 has a region (element region 60) in which the structure 51 is provided. For example, a minute structure 51 is arranged in the element region 60 of each pixel P of the pixel unit 100. The element region 60 has the structure 51 and a member 55 provided around the structure 51. In the example shown in Fig. 4, a plurality of structures 51 are arranged in the element region 60.

[0052] The element region 60 corresponds to one region when the optical layer 70 is divided into regions for each pixel P. The structures 51 may also be provided at the boundary between adjacent element regions 60. In the example shown in Fig. 4, some of the structures 51 are arranged across two adjacent element regions 60. The structures 51 may also be provided at an intersection that forms the boundary between four pixels P (or element regions 60), a side that forms the boundary between two pixels P adjacent in the X-axis direction (or Y-axis direction), etc.

[0053] The imaging device 1 has structures 51 as nanostructures, and is configured to guide incident light toward the photoelectric conversion unit 12. The structures 51 are, for example, structures having a columnar (pillar-like) shape. As an example, the structures 51 are pillars (columnar members) having a cylindrical shape. The shape of each structure 51 in the element region 60 can be changed as appropriate. For example, the structures 51 may have a polygonal shape in a planar view.

[0054] The member 55 is, for example, a member arranged so as to fill the spaces between adjacent structures 51, and can also be called a filling member. The structure 51 can also be said to be provided within the member 55 and arranged so as to replace part of the member 55. The structure 51 is made of, for example, a dielectric material having a refractive index different from that of the member 55. Note that the number and arrangement of the structures 51 are not limited to the example shown in the figure and can be changed as appropriate.

[0055] [Configuration of Imaging Device] Fig. 5 is a diagram for explaining an example of the planar configuration of an imaging device according to an embodiment. Fig. 5 shows an example of the arrangement of pixels P in the pixel unit 100 in the imaging device 1. In the pixel unit 100 of the imaging device 1, a plurality of pixels P are provided so as to be aligned, for example, in the horizontal direction (X-axis direction) and the vertical direction (Y-axis direction).

[0056] The plurality of pixels P of the pixel unit 100 includes, for example, a pixel Pr that receives and photoelectrically converts light in the red (R) wavelength range, a pixel Pg that receives and photoelectrically converts light in the green (G) wavelength range, and a pixel Pb that receives and photoelectrically converts light in the blue (B) wavelength range. The plurality of pixels P of the pixel unit 100 also includes a pixel Pc that receives and photoelectrically converts light in the Cy (cyan) wavelength range, a pixel Pm that receives and photoelectrically converts light in the Mg (magenta) wavelength range, and a pixel Py that receives and photoelectrically converts light in the Ye (yellow) wavelength range.

[0057] The pixel P has, for example, a filter 25 configured to selectively transmit light of a specific wavelength band from the incident light. The filter 25 is a primary color (RGB) color filter, a complementary color (CMY) color filter, etc. The filter 25 is provided above the photoelectric conversion unit 12 for each pixel P or for each set of multiple pixels P, for example.

[0058] Note that a filter corresponding to W (white), i.e., a filter that transmits light of the entire wavelength range of incident light, may be disposed in some of the pixels P. Furthermore, the filter 25 may be omitted from the imaging device 1 as needed. For example, depending on the characteristics of the optical layer 70, the filter 25 may not be provided in some or all of the pixels P of the imaging device 1. For example, the filter 25 may not be provided in pixels that receive white (W) light and perform photoelectric conversion.

[0059] In the example shown in FIG. 5 , pixel Pr has a filter 25r that transmits red (R) light. The filter 25r transmits light in the red wavelength range. The photoelectric conversion unit 12 of pixel Pr receives red wavelength light and performs photoelectric conversion. Pixel Pg has a filter 25g that transmits green (G) light. The filter 25g transmits light in the green wavelength range. The photoelectric conversion unit 12 of pixel Pg receives green wavelength light and performs photoelectric conversion.

[0060] Pixel Pb has a filter 25b that transmits blue (B) light. Filter 25b transmits light in the blue wavelength range. The photoelectric conversion unit 12 of pixel Pb receives blue wavelength light and performs photoelectric conversion. Pixel Pc may also have a filter 25c that transmits cyan (Cy) light. Filter 25c transmits light in the cyan wavelength range, which is a complementary color to red. Filter 25c may transmit light in the green wavelength range and light in the blue wavelength range. The photoelectric conversion unit 12 of pixel Pc receives cyan wavelength light and performs photoelectric conversion.

[0061] 5, pixel Pm has a filter 25m that transmits magenta (Mg) light. Filter 25m transmits light in the magenta wavelength range, which is complementary to green. Filter 25m can transmit light in the red wavelength range and light in the blue wavelength range. The photoelectric conversion unit 12 of pixel Pm receives magenta wavelength light and performs photoelectric conversion.

[0062] The pixel Py also has a filter 25y that transmits yellow (Ye) light. The filter 25y transmits light in the yellow wavelength range, which is a complementary color to blue. The filter 25y can transmit light in the red wavelength range and light in the green wavelength range. The photoelectric conversion unit 12 of the pixel Py receives the yellow wavelength light and performs photoelectric conversion.

[0063] The imaging device 1 has a plurality of pixel units PU (in FIG. 5 , pixel unit PU1a, pixel unit PU1b, pixel unit PU2, and pixel unit PU3) each including a plurality of pixels P. The imaging device 1 has a pixel section 100 in which the plurality of pixel units PU are two-dimensionally arranged in a matrix. The pixel unit PU can also be considered a pixel block including a plurality of pixels P.

[0064] The pixel unit PU1a and the pixel unit PU1b each have, for example, two pixels Pg and two pixels Pm. In the example shown in Fig. 5, the pixel units PU1a and PU1b each have two pixels Pg located diagonally opposite each other and two pixels Pm located diagonally opposite each other.

[0065] In the pixel unit PU1a, for example, a pixel Pg is arranged adjacent to two pixels Pm, and a pixel Pm is arranged adjacent to two pixels Pg. Also in the pixel unit PU1b, a pixel Pg is arranged adjacent to two pixels Pm, and a pixel Pm is arranged adjacent to two pixels Pg.

[0066] The two pixels Pg of the pixel unit PU1a (or the pixel unit PU1b) are arranged diagonally adjacent to each other, and the two pixels Pm are also arranged diagonally adjacent to each other. In each of the pixel unit PU1a and the pixel unit PU1b, the two pixels Pg can be arranged to be located on one diagonal line, and the two pixels Pm can be arranged to be located on the other diagonal line.

[0067] The number and arrangement of pixels Pg and pixels Pm in pixel units PU1a and PU1b are not limited to the example shown in the figure and can be changed as appropriate. For example, each of pixel units PU1a and PU1b may have three or more pixels Pg and three or more pixels Pm. The three or more pixels Pg and three or more pixels Pm may be arranged in a checkerboard pattern.

[0068] 5, the pixel unit PU2 has two pixels Pb and two pixels Py, which are diagonally opposite each other. The pixel Pb is disposed adjacent to the two pixels Py, and the pixel Py is disposed adjacent to the two pixels Pb.

[0069] The two pixels Pb of the pixel unit PU2 are arranged diagonally adjacent to each other, and the two pixels Py are also arranged diagonally adjacent to each other. In the pixel unit PU2, the two pixels Pb can be arranged to be located on one diagonal line, and the two pixels Py can be arranged to be located on the other diagonal line.

[0070] The number and arrangement of the pixels Pb and Py in the pixel unit PU2 are not limited to the example shown in the figure and can be changed as appropriate. For example, the pixel unit PU2 may have three or more pixels Pb and three or more pixels Py. The three or more pixels Pb and three or more pixels Py may be arranged in a checkerboard pattern.

[0071] The pixel unit PU3 has, for example, two pixels Pr and two pixels Pc. In the example shown in Fig. 5, the pixel unit PU3 has two pixels Pr located diagonally opposite each other and two pixels Pc located diagonally opposite each other. The pixels Pr are arranged adjacent to the two pixels Pc, and the pixels Pc are arranged adjacent to the two pixels Pr.

[0072] The two pixels Pr of the pixel unit PU3 are arranged diagonally adjacent to each other, and the two pixels Pc are also arranged diagonally adjacent to each other. In the pixel unit PU3, the two pixels Pr can be arranged to be located on one diagonal line, and the two pixels Pc can be arranged to be located on the other diagonal line.

[0073] The number and arrangement of pixels Pr and pixels Pc in pixel unit PU3 are not limited to the example shown in the figure and can be changed as appropriate. For example, pixel unit PU3 may have three or more pixels Pr and three or more pixels Pc. Three or more pixels Pr and three or more pixels Pc may be arranged in a checkerboard pattern.

[0074] A plurality of pixel units PU1a, a plurality of pixel units PU1b, a plurality of pixel units PU2, and a plurality of pixel units PU3 are repeatedly arranged in the pixel section 100. The pixel section 100 has, for example, a pixel unit row 121 in which the pixel units PU1a and the pixel units PU2 are alternately arranged, and a pixel unit row 122 in which the pixel units PU3 and the pixel units PU1b are alternately arranged.

[0075] 5 , pixel unit row 121 includes pixel row 131 and pixel row 132. In pixel row 131 and pixel row 132, pixel Pg and pixel Pm of pixel unit PU1a and pixel Pb and pixel Py of pixel unit PU2 are repeatedly arranged, respectively. Furthermore, pixel unit row 122 includes pixel row 133 and pixel row 134. In pixel row 133 and pixel row 134, pixel Pr and pixel Pc of pixel unit PU3 and pixel Pg and pixel Pm of pixel unit PU1b are repeatedly arranged, respectively.

[0076] As an example, pixel unit groups PUG each including a pixel unit PU1 a, a pixel unit PU1 b, a pixel unit PU2, and a pixel unit PU3 are repeatedly provided in the pixel section 100. In the pixel section 100, a plurality of pixel unit groups PUG can be provided so as to be aligned in the X-axis direction and the Y-axis direction.

[0077] The pixels Pr, Pg, and Pb can generate pixel signals of the R component, the G component, and the B component, respectively. The imaging device 1 can obtain RGB pixel signals. The pixels Pc, Pm, and Py can generate pixel signals of the Cy component, the Mg component, and the Ye component, respectively. The imaging device 1 can obtain CMY pixel signals.

[0078] As described above, the pixel section 100 of the imaging device 1 according to the present embodiment includes pixels Pr, Pg, and Pb, which are primary color pixels, and pixels Pc, Pm, and Py, which are complementary color pixels. This allows both an RGB image and a CMY image to be obtained by a single imaging operation, thereby achieving high color reproducibility.

[0079] 6 is a diagram showing an example of a cross-sectional configuration of an imaging device according to an embodiment. The imaging device 1 has an optical layer 70, a spacer layer 90, a semiconductor layer 10, and a wiring layer 95. The imaging device 1 has a configuration in which the optical layer 70, the spacer layer 90, the semiconductor layer 10, and the wiring layer 95 are stacked in the Z-axis direction. The optical layer 70, the spacer layer 90, the semiconductor layer 10, and the wiring layer 95 are provided from the light incident side.

[0080] The optical layer 70 has structures 51 and is configured to guide incident light to the photoelectric conversion unit 12 side. The optical layer 70 has, for example, a plurality of structures 51 arranged so as to be aligned in the X-axis direction (or the Y-axis direction). The optical layer 70 is an optical element (optical member) that utilizes metamaterial (metasurface) technology. The structures 51 have, for example, a columnar shape and can be referred to as a metasurface element. The optical layer 70 can also be referred to as a metasurface layer or a metamaterial layer.

[0081] The optical layer 70 includes structures 51 and members 55 provided around the structures 51. The structures 51 are, for example, pillars (columnar members) and can also be called nanopillars. The structures 51 and the members 55 are made of materials having refractive indices different from each other. The optical layer 70 including the structures 51 is provided by being stacked on the spacer layer 90.

[0082] The semiconductor layer 10 is composed of a semiconductor substrate (for example, a Si (silicon) substrate, an SOI (silicon on insulator) substrate, etc.). The semiconductor layer 10 may be a SiGe (silicon germanium) substrate, a SiC (silicon carbide) substrate, etc., or may be formed using other semiconductor materials. The semiconductor layer 10 may also be composed of a III-V group compound semiconductor material, etc.

[0083] As shown in FIG. 6 , the semiconductor layer 10 has opposing surfaces 11S1 and 11S2. The surface 11S2 is the surface opposite to the surface 11S1. For example, the surface 11S1 of the semiconductor layer 10 is a light-receiving surface (light incident surface). The surface 11S2 of the semiconductor layer 10 is an element formation surface on which elements such as transistors are formed. A gate electrode, a gate insulating film (e.g., a gate oxide film), etc. may be provided on the surface 11S2 of the semiconductor layer 10.

[0084] 6 , a spacer layer 90 is provided on the surface 11S1 side of the semiconductor layer 10. The optical layer 70 and the spacer layer 90 are stacked on the semiconductor layer 10 in a thickness direction perpendicular to the surface 11S1 of the semiconductor layer 10. A wiring layer 95 is provided on the surface 11S2 side of the semiconductor layer 10. The optical layer 70 is provided on the side where light from the optical system is incident, and the wiring layer 95 is provided on the side opposite to the side where the light is incident.

[0085] In the semiconductor layer 10, a plurality of photoelectric conversion units 12 (photoelectric conversion regions) are provided along the surfaces 11S1 and 11S2 of the semiconductor layer 10. For example, the plurality of photoelectric conversion units 12 are embedded in the semiconductor layer 10. The photoelectric conversion units 12 are provided between the surfaces 11S1 and 11S2 of the semiconductor layer 10. The photoelectric conversion units 12 are photoelectric conversion regions and can also be referred to as photoelectric conversion layers. The photoelectric conversion units 12 perform photoelectric conversion on light incident via the optical layer 70 and the spacer layer 90.

[0086] The wiring layer 95 is provided by being laminated on the semiconductor layer 10. The wiring layer 95 includes, for example, a conductor film and an insulating film, and has a plurality of wirings and vias. The wiring layer 95 has a configuration in which a plurality of wirings are laminated via an insulating film serving as an interlayer insulating film (interlayer insulating layer). The wiring layer 95 is a multi-layer wiring layer, and includes, for example, two or more layers of wirings, or three or more layers of wirings.

[0087] The wiring of the wiring layer 95 is formed using a metal material such as aluminum (Al), tungsten (W), or copper (Cu). The wiring of the wiring layer 95 may be formed using polysilicon (Poly-Si) or other conductive materials. The interlayer insulating film is formed using, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or the like.

[0088] The semiconductor layer 10 and the wiring layer 95 are provided with, for example, the above-described readout circuit 20 (see FIG. 3 ) for each pixel P or for each set of pixels P. The above-described pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114 (see FIG. 1 ), etc. may be provided on the semiconductor layer 10 and the wiring layer 95, or on a substrate separate from the semiconductor layer 10.

[0089] The spacer layer 90 is provided between the semiconductor layer 10 and the optical layer 70. The spacer layer 90 is made of an insulating film such as an oxide film, a nitride film, or an oxynitride film, and can also be called an insulating layer. The spacer layer 90 may be made of an insulating material such as silicon oxide, silicon nitride, or aluminum oxide (AlO), or may be made of other materials.

[0090] The spacer layer 90 (insulating layer) may be made of a material with a low refractive index, such as silicon oxide. The spacer layer 90 may also be made of another material that transmits light in the wavelength band to be measured. The spacer layer 90 can also be called a transparent layer that transmits light.

[0091] The imaging device 1 has filters 25 (filters 25g, 25m, 25b, and 25y in FIG. 6 ). The filters 25 are provided above the photoelectric conversion unit 12, for example, for each pixel P or for each set of pixels P (i.e., for each predetermined number of pixels P). In the example shown in FIG. 6 , the filters 25 are provided in the spacer layer 90, between the optical layer 70 and the semiconductor layer 10. As described above, the filters 25 are RGB color filters, CMY color filters, or the like.

[0092] In the imaging device 1, by providing the filter 25 as described above, it is possible to reduce color mixing between pixels P. This makes it possible to prevent noise from being mixed into pixel signals, and to prevent deterioration in the quality of images generated using pixel signals.

[0093] 6, the imaging device 1 also has an isolation region 30. The isolation region 30 is an isolation region (isolation portion) provided around a pixel P (or a photoelectric conversion portion 12). The isolation region 30 is provided between adjacent pixels P in the semiconductor layer 10, and separates the pixels P (or the photoelectric conversion portions 12). The isolation region 30 is formed using, for example, a trench (groove portion).

[0094] The isolation region 30 is provided, for example, in a plan view (i.e., when viewed in the XY plane) so as to surround the photoelectric conversion unit 12 on all four sides. The isolation region 30 can be formed in a lattice shape in the semiconductor layer 10 so as to surround the photoelectric conversion unit 12 of each pixel P. At least a portion of the isolation region 30 is provided on the boundary between adjacent pixels P. The isolation region 30 can also be referred to as an inter-pixel isolation portion or an inter-pixel isolation wall.

[0095] 6 , the isolation region 30 may be provided so as to penetrate the semiconductor layer 10. The isolation region 30 has, for example, a full trench isolation (FTI) structure and is formed so as to reach the surface 11S2 of the semiconductor layer 10. The isolation region 30 may be provided from the surface 11S1 of the semiconductor layer 10 to between the surfaces 11S1 and 11S2 of the semiconductor layer 10.

[0096] An insulating film, such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film, is provided in the trench of the isolation region 30. The trench of the isolation region 30 may be filled with polysilicon, a metal material, another insulating material, or the like.

[0097] The isolation region 30 may be formed using other insulating materials having a low refractive index. A gap (cavity) may be provided within the isolation region 30. The isolation region 30 may be configured by a semiconductor region (a p-type semiconductor region or an n-type semiconductor region) formed by ion implantation.

[0098] A light-shielding member (light-shielding portion) may be provided as the isolation region 30. For example, a material that absorbs light is provided inside the trench of the isolation region 30. As an example, tungsten (W) may be embedded in the trench of the isolation region 30. The isolation region 30 may be made of polysilicon. The isolation region 30 may also be formed using other materials that block light. The isolation region 30 is made of a light-shielding member and may also be called a light-shielding wall or an inter-cell light-shielding wall.

[0099] In the imaging device 1, the provision of the separation region 30 prevents the electric charge converted by the photoelectric conversion unit 12 of the pixel P from leaking to the surrounding pixels P (or the photoelectric conversion unit 12). It also prevents unnecessary light from leaking to the surrounding pixels P, thereby preventing, for example, color mixing. It also makes it possible to prevent noise from being mixed into the pixel signal.

[0100] The imaging device 1 may have at least one of a fixed charge film and an anti-reflection film on the surface 11S1 side of the semiconductor layer 10. The fixed charge film and the anti-reflection film may be made of, for example, a metal compound (metal oxide, metal nitride, etc.) and may also be referred to as a metal compound layer. The fixed charge film is a film having a fixed charge and may be formed using a high-dielectric material.

[0101] The fixed charge film is, for example, made of a metal oxide such as aluminum oxide or hafnium oxide. The fixed charge film is, for example, a film having a negative fixed charge. A portion of each of the fixed charge film and the antireflection film may be provided in the semiconductor layer 10 so as to extend along the sidewall (side surface) of the isolation region 30.

[0102] In the imaging device 1, the fixed charge film is provided to suppress the generation of dark current at the interface of the semiconductor layer 10. The fixed charge film may be formed of another metal oxide film, or may be formed using a metal nitride film or a metal oxynitride film. A film having a positive fixed charge may be provided as the fixed charge film.

[0103] The antireflection film is made of, for example, a metal oxide such as hafnium oxide or tantalum oxide. The antireflection film (anti-reflection film) is provided on the surface 11S1 side of the semiconductor layer 10 to reduce (suppress) reflection. The antireflection film is provided, for example, so as to be stacked with the fixed charge film. The antireflection film may be made of an insulating material such as silicon nitride, silicon oxide, or aluminum oxide, or may be made of other materials.

[0104] 6 , the optical layer 70 has a plurality of structures 51 and is provided above the photoelectric conversion unit 12. Light from a subject as a measurement target is incident on the optical layer 70. For example, light that has passed through an optical system such as an imaging lens is incident on the structures 51 of the optical layer 70.

[0105] The structure 51 has a size equal to or smaller than a predetermined wavelength of incident light when viewed in a plan view (i.e., when viewed in the XY plane), for example. Note that the size of the structure 51 when viewed in the XZ plane or the YZ plane (for example, the height of the cylindrical structure 51) may be equal to or smaller than the predetermined wavelength of incident light, or may be larger than the wavelength of the incident light.

[0106] The optical layer 70 has nanostructures 51, and is configured to guide light incident from above in Fig. 6 toward the photoelectric conversion unit 12. When viewed in the XY plane, the structures 51 have a size equal to or smaller than the wavelength range of light to be measured, for example, a size equal to or smaller than the wavelength range of visible light. The structures 51 may also have a size equal to or smaller than the wavelength range of infrared light.

[0107] The multiple structures 51 in each element region 60 are arranged side by side in the X-axis direction or the Y-axis direction, with part of the member 55 sandwiched between them. As an example, the structures 51 have a cylindrical shape. Note that the shape of the structures 51 can be changed as appropriate, and may be a circle or a square in a plan view. The shape of the structures 51 may be an ellipse, a polygon, a cross, or any other shape.

[0108] 6 , the member 55 is provided between adjacent structures 51. The member 55 may be formed so as to cover the structures 51. For example, a portion of the member 55 may be located on the structures 51. The member 55 is a member located around the structures 51, and may also be referred to as a support member or a material layer.

[0109] The optical layer 70 utilizes the structures 51, which are nanostructures, to propagate light toward the photoelectric conversion unit 12. The structures 51 are also called, for example, nanopillars, metaatoms, nanoatoms, nanoposts, metasurface structures, microstructures, etc. The optical layer 70 is an optical element (optical member) that guides (propagates) light.

[0110] The optical layer 70 is configured to, for example, impart a phase delay to incident light and guide the light. As an example, the optical layer 70 is provided with a plurality of structures 51 so as to impart a desired phase profile to the incident light. For example, the size, number of structures 51, arrangement interval (pitch), etc. are determined so that light in a wavelength band to be detected is focused onto a predetermined photoelectric conversion unit 12.

[0111] In the optical layer 70, for example, the plurality of structures 51 are arranged at intervals equal to or less than a predetermined wavelength of incident light. As an example, the plurality of structures 51 are provided at intervals equal to or less than the wavelength range of visible light in the X-axis direction and the Y-axis direction. Note that the plurality of structures 51 may also be arranged at intervals equal to or less than the wavelength range of infrared light in the XY plane.

[0112] The structure 51 is configured to have a refractive index different from that of the adjacent medium. The structure 51 has a refractive index different from that of the medium surrounding the structure 51, i.e., the member 55. For example, the structure 51 has a refractive index higher than that of the member 55. The structure 51 and the member 55 may be made of different materials.

[0113] The structure 51 is made of, for example, a material having a refractive index higher than that of the member 55. The structure 51 is made of a high refractive index material and can also be called a high refractive index portion. The member 55 is made of a low refractive index material and can also be called a low refractive index portion. The member 55 can also be called a material layer having a refractive index different from that of the structure 51.

[0114] The structure 51 is formed of, for example, an oxide film containing titanium (Ti). As an example, the structure 51 is formed using titanium oxide (TiO). As another example, the structure 51 may be formed using silicon, polysilicon (Poly-Si), amorphous silicon (a-Si), germanium (Ge), or the like.

[0115] The structure 51 may be made of titanium (Ti), hafnium (Hf), aluminum (Al), zirconium (Zr), tantalum (Ta), indium (In), niobium (Nb), or the like, or an oxide, nitride, oxynitride, or a composite thereof.

[0116] The structure 51 may be made of other metal compounds (metal oxides, metal nitrides, etc.). The structure 51 may be made of GaP, GaN, GaAs, etc. The structure 51 may also be formed of silicon carbide (SiC) or other silicon compounds.

[0117] The member 55 is made of, for example, an inorganic material such as an oxide, a nitride, or an oxynitride. The member 55 may be made of, for example, silicon oxide (SiO), silicon nitride (SiN), or silicon oxynitride (SiON). The member 55 may also be made of silicon oxynitride, silicon carbide, silicon oxycarbide, silicon carbonitride, or other silicon compounds.

[0118] The member 55 may be made of, for example, a siloxane-based resin, a styrene-based resin, an acrylic-based resin, or the like. The member 55 may be made of a material in which any of these resins contains fluorine. The member 55 may be made of a material in which any of these resins is filled with beads (filler) having a refractive index higher (or lower) than that of the resin.

[0119] The materials constituting the structure 51 and the member 55 can be selected depending on the refractive index difference with the surrounding medium, the wavelength range of incident light to be measured, etc. The structure 51 and the member 55 may be made of an inorganic material or an organic material. Furthermore, the structure 51 or the member 55 may be made of a void (cavity). For example, the member 55 may be made to include air (void).

[0120] The optical layer 70 can control the wavefront of light by, for example, causing a phase delay in incident light due to a difference in refractive index between the structure 51 and the surrounding medium. The optical layer 70 can adjust the propagation direction of light by, for example, imparting a phase delay to incident light using the structure 51 and the member 55 surrounding the structure 51. The light to which the phase is imparted by the optical layer 70 propagates through the spacer layer 90 and reaches the filter 25 and the photoelectric conversion unit 12.

[0121] In each pixel P of the imaging device 1, for example, the effective refractive index of the structures 51 and the members 55 is adjusted according to the occupancy rate (filling rate) of the structures 51, and the amount of phase delay of light in each wavelength range can be set. By adjusting the size and number of the structures 51, the amount of phase delay can be controlled, and a desired phase distribution can be realized.

[0122] The materials of the structures 51 and the members 55 (optical constants of each material), the size of the structures 51 (width (diameter), height, etc.), the pitch (arrangement interval), etc. are determined so that light of a desired wavelength range among the incident light from the measurement target travels in a desired direction. For example, the material (refractive index), dimensions, pitch, etc. of the structures 51 can be set.

[0123] The optical layer 70 may be configured as a spectroscopic unit (spectroscopic element) capable of separating incident light. The optical layer 70 may be configured as a splitter (color splitter) and may also be referred to as a color splitter layer or a color separation layer. The optical layer 70 may also be referred to as an optical element configured to redirect light. The optical layer 70 allows light of a desired wavelength range to be efficiently guided to the filter 25 and the photoelectric conversion unit 12.

[0124] The optical layer 70 can adjust the propagation direction of light by, for example, imparting different amounts of phase delay depending on the wavelength of the light, and can separate the incident light into light of each wavelength range. The propagation direction of light of each wavelength by the optical layer 70 can be adjusted by the material (refractive index), width, height, arrangement position (pitch), etc. of the structures 51.

[0125] In the imaging device 1, the material, size, arrangement number, etc. of the structures 51 are determined so that light in a specific wavelength band to be detected branches off and travels to the photoelectric conversion unit 12 of the desired pixel P. For example, the size, arrangement interval, etc. of the structures 51 in the pixel P of each color are set to obtain a desired light collection range for each pixel P of each color. For example, the structures 51 in the element region 60 of each of the pixels Pr, Pg, Pb, Pc, Pm, and Py can be formed so that their sizes (e.g., width, height), arrangement positions, etc. are different from one another.

[0126] As described above, light from a subject to be measured is incident on the photoelectric conversion unit 12 of each pixel P of the imaging device 1 via the optical layer 70. Each pixel P can generate a pixel signal by photoelectrically converting the light incident via the optical layer 70. The imaging device 1 can generate image data representing an image of the subject, for example, using the pixel signal obtained by photoelectric conversion in each pixel P.

[0127] 7 and 8 are diagrams illustrating an example of the configuration of an imaging device according to an embodiment. Also, FIGS. 9 to 11 are diagrams illustrating an example of the cross-sectional configuration of an imaging device according to an embodiment. FIGS. 9 to 11 show an example of the cross-sectional configuration of a pixel row 131 (see FIG. 5 ) that includes pixels Pg and Pm of pixel unit PU1 a and pixels Pb and Py of pixel unit PU2.

[0128] In Fig. 9, the dashed arrow Lg schematically represents green light. In Fig. 10, the dashed arrow Lb schematically represents blue light, and in Fig. 11, the dashed arrow Lr schematically represents red light. Note that the hollow arrows in Figs. 9 to 11 schematically represent light incident on the optical layer 70 including the structures 51.

[0129] The optical layer 70 of the imaging device 1 has, for example, a region corresponding to the pixel unit PU1a, which collects light in the green wavelength band (referred to as light-collecting region 71a), and a region corresponding to the blue wavelength band and light in the red wavelength band (referred to as light-collecting region 72a). The light-collecting region 71a and the light-collecting region 72a adjust the traveling directions of the red light, green light, and blue light, respectively.

[0130] 7, the light-collecting region 71a is provided for the pixel Pg of the pixel unit PU1a. The light-collecting region 71a is provided, for example, to correspond to the pixel Pg and a part of the pixel Pm adjacent to the pixel Pg. When viewed from above the optical layer 70, the light-collecting region 71a is positioned so as to overlap with the photoelectric conversion unit 12 of the pixel Pg and at least a part of the photoelectric conversion unit 12 of the pixel Pm.

[0131] The optical layer 70 has, for example, a plurality of light-collecting regions 71a (e.g., two light-collecting regions 71a) for each pixel unit PU1a, the number of which corresponds to the number of pixels Pg in the pixel unit PU1a. As an example, the light-collecting regions 71a have a size that is approximately equal to the size of the pixel unit PU1a divided into two equal parts. In the example shown in FIG. 7, the two light-collecting regions 71a are positioned adjacent to each other.

[0132] 8, the light-collecting region 72a is provided for the pixel Pm of the pixel unit PU1a. The light-collecting region 72a is provided, for example, to correspond to the pixel Pm and a part of the pixel Pg adjacent to the pixel Pm. When viewed from above the optical layer 70, the light-collecting region 72a is positioned so as to overlap with the photoelectric conversion unit 12 of the pixel Pm and at least a part of the photoelectric conversion unit 12 of the pixel Pg.

[0133] The optical layer 70 has, for example, a plurality of light-collecting regions 72a (e.g., two light-collecting regions 72a) for each pixel unit PU1a, the number of which corresponds to the number of pixels Pm in the pixel unit PU1a. As an example, the light-collecting regions 72a have a size that is approximately equal to the size of the pixel unit PU1a divided into two equal parts. In the example shown in Fig. 8, the two light-collecting regions 72a are positioned adjacent to each other.

[0134] The light-collecting region 71a in the optical layer 70 can be configured as a region that overlaps with a portion of the light-collecting region 72a. For example, the light-collecting region 71a overlaps with a portion of the light-collecting region 72a and includes a portion of the light-collecting region 72a. Furthermore, the light-collecting region 72a overlaps with a portion of the light-collecting region 71a and includes a portion of the light-collecting region 71a. The light-collecting region 71a and the light-collecting region 72a partially overlap each other. The light-collecting region 71a and the light-collecting region 72a are regions that overlap each other, and can also be said to be provided so as to overlap each other.

[0135] The light collecting region 71a and the light collecting region 72a are also provided for the pixel unit PU1b. The optical layer 70 has the light collecting region 71a and the light collecting region 72a corresponding to the pixel unit PU1a, and the light collecting region 71a and the light collecting region 72a corresponding to the pixel unit PU1b.

[0136] The optical layer 70 of the imaging device 1 may have, as regions corresponding to the pixel unit PU2, a region that collects light in the blue wavelength band (referred to as light-collecting region 71b) and regions that collect light in the green wavelength band and light in the red wavelength band (referred to as light-collecting region 72b). The light-collecting region 71b and the light-collecting region 72b adjust the traveling directions of the red light, green light, and blue light, respectively.

[0137] 7, the light-collecting region 71b is provided for pixel Pb of pixel unit PU2. For example, the light-collecting region 71b is provided to correspond to pixel Pb and a part of pixel Py adjacent to pixel Pb. When viewed from above the optical layer 70, the light-collecting region 71b is positioned so as to overlap with the photoelectric conversion unit 12 of pixel Pb and at least a part of the photoelectric conversion unit 12 of pixel Py.

[0138] The optical layer 70 has, for example, a plurality of light collection regions 71b (e.g., two light collection regions 71b) for each pixel unit PU2, the number of which corresponds to the number of pixels Pb in the pixel unit PU2. As an example, the light collection regions 71b have a size that is approximately equal to the size of the pixel unit PU2 divided into two equal parts. In the example shown in Fig. 7, the two light collection regions 71b are positioned adjacent to each other.

[0139] 8, the light-collecting region 72b is provided for the pixel Py of the pixel unit PU2. The light-collecting region 72b is provided, for example, to correspond to the pixel Py and a part of the pixel Pb adjacent to the pixel Py. The light-collecting region 72b is positioned so as to overlap with the photoelectric conversion unit 12 of the pixel Py and at least a part of the photoelectric conversion unit 12 of the pixel Pb when viewed from above the optical layer 70.

[0140] The optical layer 70 has, for example, a plurality of light collection regions 72b (e.g., two light collection regions 72b) for each pixel unit PU2, the number of which corresponds to the number of pixels Py in the pixel unit PU2. As an example, the light collection regions 72b have a size that is approximately equal to the size of the pixel unit PU2 divided into two equal parts. In the example shown in Fig. 8, the two light collection regions 72b are positioned adjacent to each other.

[0141] The light-collecting region 71b in the optical layer 70 can be configured as a region that overlaps with a portion of the light-collecting region 72b. For example, the light-collecting region 71b overlaps with a portion of the light-collecting region 72b and includes a portion of the light-collecting region 72b. Furthermore, the light-collecting region 72b overlaps with a portion of the light-collecting region 71b and includes a portion of the light-collecting region 71b. The light-collecting region 71b and the light-collecting region 72b partially overlap each other. The light-collecting region 71b and the light-collecting region 72b are regions that overlap each other, and can also be said to be provided so as to overlap each other.

[0142] The optical layer 70 of the imaging device 1 may also have a region that collects light in the red wavelength band (referred to as light-collecting region 71c) and regions that collect light in the blue wavelength band and light in the green wavelength band (referred to as light-collecting region 72c) as regions corresponding to the pixel unit PU3. The light-collecting region 71c and the light-collecting region 72c adjust the traveling directions of the red light, green light, and blue light, respectively.

[0143] 7, the light-collecting region 71c is provided for the pixel Pr of the pixel unit PU3. The light-collecting region 71c is provided, for example, to correspond to the pixel Pr and a part of the pixel Pc adjacent to the pixel Pr. The light-collecting region 71c is positioned so as to overlap with the photoelectric conversion unit 12 of the pixel Pr and at least a part of the photoelectric conversion unit 12 of the pixel Pc when viewed from above the optical layer 70.

[0144] The optical layer 70 has, for example, a plurality of light collection regions 71c (e.g., two light collection regions 71c) for each pixel unit PU3, the number of which corresponds to the number of pixels Pr of the pixel unit PU3. As an example, the light collection regions 71c have a size that is approximately equal to the size of the pixel unit PU3 divided into two equal parts. In the example shown in Fig. 7, the two light collection regions 71c are positioned adjacent to each other.

[0145] 8, the light-collecting region 72c is provided for the pixel Pc of the pixel unit PU3. The light-collecting region 72c is provided, for example, to correspond to the pixel Pc and a part of the pixel Pr adjacent to the pixel Pc. When viewed from above the optical layer 70, the light-collecting region 72c is positioned so as to overlap with the photoelectric conversion unit 12 of the pixel Pc and at least a part of the photoelectric conversion unit 12 of the pixel Pr.

[0146] The optical layer 70 has, for example, a plurality of light collection regions 72c (e.g., two light collection regions 72c) for each pixel unit PU3, the number of which corresponds to the number of pixels Pc in the pixel unit PU3. As an example, the light collection regions 72c have a size that is approximately equal to the size of the pixel unit PU3 divided into two equal parts. In the example shown in Fig. 8, the two light collection regions 72c are positioned adjacent to each other.

[0147] The light-collecting region 71c in the optical layer 70 can be configured as a region that overlaps with a portion of the light-collecting region 72c. For example, the light-collecting region 71c overlaps with a portion of the light-collecting region 72c and includes a portion of the light-collecting region 72c. Furthermore, the light-collecting region 72c overlaps with a portion of the light-collecting region 71c and includes a portion of the light-collecting region 71c. The light-collecting region 71c and the light-collecting region 72c partially overlap each other. The light-collecting region 71c and the light-collecting region 72c are regions that overlap each other, and can also be said to be provided so as to overlap each other.

[0148] The light collection regions 71a to 71c and the light collection regions 72a to 72c can each have a light receiving area that is approximately twice the area of ​​one pixel P. For example, in a plan view (i.e., when viewed on the XY plane), the light receiving area of ​​each of the light collection regions 71a to 71c and the light collection regions 72a to 72c is twice the area of ​​the pixel P.

[0149] The light-collecting region 71a corresponding to the pixel Pg and a part of the pixel Pm of the pixel unit PU1a (or pixel unit PU1b) is configured to be able to propagate green (G) light of the incident light to the photoelectric conversion unit 12 of the pixel Pg. Furthermore, the light-collecting region 72a corresponding to the pixel Pm and a part of the pixel Pg of the pixel unit PU1a (or pixel unit PU1b) is configured to propagate blue (B) light and red (R) light of the incident light to the photoelectric conversion unit 12 of the pixel Pm, respectively.

[0150] The light-collecting regions 71a and 72a of the optical layer 70 split incident light, guiding light in the green wavelength band of the incident light toward the pixel Pg and light in the blue wavelength band and red wavelength band toward the pixel Pm. The light-collecting region 71a is configured to guide light in the green wavelength range of the incident light to the photoelectric conversion unit 12 of the pixel Pg. For example, as shown by the arrow Lg in FIG. 9 , the optical layer 70 collects light in the green wavelength band that is incident on the light-collecting region 71a onto the filter 25g and the photoelectric conversion unit 12 of the pixel Pg.

[0151] Furthermore, the light collecting region 72a is configured to guide light in the blue wavelength range and the red wavelength range (i.e., light in the magenta wavelength range) of the incident light to the filter 25m of the pixel Pm and the photoelectric conversion unit 12. For example, as indicated by arrow Lb in FIG. 10 , the optical layer 70 collects light in the blue wavelength range that is incident on the light collecting region 72a to the filter 25m of the pixel Pm and the photoelectric conversion unit 12. As indicated by arrow Lr in FIG. 11 , the optical layer 70 collects light in the red wavelength range that is incident on the light collecting region 72a to the filter 25m of the pixel Pm and the photoelectric conversion unit 12.

[0152] The light-collecting region 71b corresponding to the pixel Pb and a part of the pixel Py of the pixel unit PU2 is configured to be able to propagate blue (B) light of the incident light to the photoelectric conversion unit 12 of the pixel Pb. Furthermore, the light-collecting region 72b corresponding to the pixel Py and a part of the pixel Pb of the pixel unit PU2 is configured to propagate green (G) light and red (R) light of the incident light to the photoelectric conversion unit 12 of the pixel Py.

[0153] The light-collecting regions 71b and 72b of the optical layer 70 split incident light, guiding light in the blue wavelength band toward pixel Pb and light in the green wavelength band and red wavelength band toward pixel Py. The light-collecting region 71b is configured to guide light in the blue wavelength band among the incident light to the photoelectric conversion unit 12 of pixel Pb. For example, as shown by arrow Lb in FIG. 10 , the optical layer 70 collects light in the blue wavelength band that is incident on the light-collecting region 71b onto the filter 25b and the photoelectric conversion unit 12 of pixel Pb.

[0154] Furthermore, the light collecting region 72b is configured to guide light in the green wavelength range and the red wavelength range (i.e., light in the yellow wavelength range) of the incident light to the filter 25y and the photoelectric conversion unit 12 of the pixel Py. For example, as indicated by the arrow Lg in FIG. 9 , the optical layer 70 collects light in the green wavelength range that is incident on the light collecting region 72b to the filter 25y and the photoelectric conversion unit 12 of the pixel Py. Furthermore, as indicated by the arrow Lr in FIG. 11 , the optical layer 70 collects light in the red wavelength range that is incident on the light collecting region 72b to the filter 25y and the photoelectric conversion unit 12 of the pixel Py.

[0155] The light-collecting region 71c corresponding to the pixel Pr and a part of the pixel Pc of the pixel unit PU3 is configured to be able to propagate red (R) light of the incident light to the photoelectric conversion unit 12 of the pixel Pr. Furthermore, the light-collecting region 72c corresponding to the pixel Pc and a part of the pixel Pr of the pixel unit PU3 is configured to propagate green (G) light and blue (B) light of the incident light to the photoelectric conversion unit 12 of the pixel Pc.

[0156] The light-collecting regions 71c and 72c of the optical layer 70 split incident light, guiding light in the red wavelength band of the incident light toward the pixel Pr and light in the green wavelength band and light in the blue wavelength band toward the pixel Pc. The light-collecting region 71c is configured to guide light in the red wavelength range of the incident light to the photoelectric conversion unit 12 of the pixel Pr. For example, the optical layer 70 collects light in the red wavelength band that is incident on the light-collecting region 71c onto the filter 25r and the photoelectric conversion unit 12 of the pixel Pr.

[0157] Furthermore, the light-collecting region 72c is configured to guide light in the green wavelength range and the blue wavelength range (i.e., light in the cyan wavelength range) of the incident light to the filter 25c of the pixel Pc and the photoelectric conversion unit 12. For example, the optical layer 70 collects light in the green wavelength range that is incident on the light-collecting region 72c to the filter 25c of the pixel Pc and the photoelectric conversion unit 12. Furthermore, the optical layer 70 collects light in the blue wavelength range that is incident on the light-collecting region 72c to the filter 25c of the pixel Pc and the photoelectric conversion unit 12.

[0158] 12 to 14 are diagrams illustrating an example of the configuration of an imaging device according to an embodiment. In Fig. 12, a light-condensing spot formed when green light is incident is represented by a circle "O". In Fig. 13, a light-condensing spot formed when blue light is incident is represented by a circle "O", and in Fig. 14, a light-condensing spot formed when red light is incident is represented by a circle "O".

[0159] The light-collecting region 71a corresponding to the pixel unit PU1a (or pixel unit PU1b) collects light of a green wavelength among the incident light toward the photoelectric conversion unit 12 of the pixel Pg. The green light incident on the light-collecting region 71a including the element region 60 of the pixel Pg and a part of the element region 60 of the pixel Pm can be collected toward the photoelectric conversion unit 12 of the pixel Pg, as in the example shown in FIG.

[0160] The light-collecting region 71b corresponding to the pixel unit PU2 collects blue wavelength light from the incident light onto the photoelectric conversion unit 12 of the pixel Pb. The blue light incident on the light-collecting region 71b including the element region 60 of the pixel Pb and a part of the element region 60 of the pixel Py can be collected onto the photoelectric conversion unit 12 of the pixel Pb, as in the example shown in FIG.

[0161] Furthermore, the light-collecting region 71c corresponding to the pixel unit PU3 collects light of a red wavelength among the incident light toward the photoelectric conversion unit 12 of the pixel Pr. Red light incident on the light-collecting region 71c including the element region 60 of the pixel Pr and a part of the element region 60 of the pixel Pc can be collected toward the photoelectric conversion unit 12 of the pixel Pr, as in the example shown in FIG.

[0162] In this way, the photoelectric conversion unit 12 of each of the pixels Pr, Pg, and Pb can efficiently receive light from the measurement target, perform photoelectric conversion, and generate charges according to the amount of light received. For example, as in the examples shown in Figures 12 to 14, light can be collected onto the pixel from a light collection region having an area twice the area of ​​one pixel, thereby improving the sensitivity of the pixels Pr, Pg, and Pb.

[0163] The light-collecting region 72a corresponding to the pixel unit PU1a (or pixel unit PU1b) collects blue wavelength light and red wavelength light out of the incident light onto the photoelectric conversion unit 12 of the pixel Pm. The blue light and red light incident on the light-collecting region 72a including the element region 60 of the pixel Pm and a part of the element region 60 of the pixel Pg can be collected onto the photoelectric conversion unit 12 of the pixel Pm, as in the examples shown in FIGS. 13 and 14 .

[0164] The light-collecting region 72b corresponding to the pixel unit PU2 collects light of green wavelengths and light of red wavelengths out of the incident light onto the photoelectric conversion unit 12 of the pixel Py. The green light and red light incident on the light-collecting region 72b including the element region 60 of the pixel Py and a part of the element region 60 of the pixel Pb can be collected onto the photoelectric conversion unit 12 of the pixel Py as in the examples shown in FIGS.

[0165] Furthermore, the light-collecting region 72c corresponding to the pixel unit PU3 collects light of green wavelengths and light of blue wavelengths among the incident light toward the photoelectric conversion unit 12 of the pixel Pc. The green light and blue light incident on the light-collecting region 72c including the element region 60 of the pixel Pc and a part of the element region 60 of the pixel Pr can be collected toward the photoelectric conversion unit 12 of the pixel Pc, as in the examples shown in FIGS. 12 and 13 .

[0166] In this way, the photoelectric conversion unit 12 of each of the pixels Pc, Pm, and Py can efficiently receive light from the measurement target, perform photoelectric conversion, and generate charges according to the amount of light received. For example, as in the examples shown in Figures 12 to 14, light can be collected onto the pixel from a light collection region having an area twice the area of ​​one pixel, thereby improving the sensitivity of the pixels Pc, Pm, and Py.

[0167] As described above, in the imaging device 1 according to the present embodiment, light is collected at each pixel P in the pixel unit PU by the light collection region corresponding to the region of the pixel unit PU, and photoelectric conversion is performed in each pixel P. Therefore, in the present embodiment, it is possible to obtain a high-resolution image while improving sensitivity to incident light.

[0168] For example, one primary color pixel and one complementary color pixel are provided in each pixel unit PU of the imaging device 1. The optical layer 70 of the imaging device 1 can be configured to guide, for each pixel unit PU, light in one wavelength range of RGB to the primary color pixel and light in the other two wavelength ranges to the complementary color pixel.

[0169] Therefore, in this embodiment, the required phase difference can be reduced compared to, for example, a case where red light, green light, and blue light are separated and collected in separate pixels within one pixel unit, and the difficulty of design can be reduced. Also, as described above, by providing RGB pixels and CMY pixels, high color reproducibility can be achieved.

[0170] Next, the imaging device according to this embodiment will be further described with reference to Figures 15 and 16, etc. The processing unit 114 of the imaging device 1 may have, for example, an image processing unit 115 as shown in Figure 15. The image processing unit 115 is configured to perform signal processing on pixel signals of each pixel P to generate image data. The image processing unit 115 is, for example, an image processing circuit, and can also be considered an image data generation unit that can generate image data. Note that the image processing unit 115 may be provided outside the imaging device 1.

[0171] 16 is a diagram illustrating an example of signal processing by the image processing unit of the imaging device according to the embodiment. The image processing unit 115 is configured to be able to generate luminance information (luminance signal) based on, for example, the pixel signal (i.e., pixel value) of each pixel P. The image processing unit 115 performs, for example, white balance adjustment on image data 81 including the pixel signal (pixel value) of each pixel, and then performs binning processing.

[0172] 16, the image processing unit 115 performs a binning process in which the pixel signals of four pixels P, which form a 2×2 pixel group, are added together in the image data 81. As an example, the image processing unit 115 adds the pixel signal of pixel Pg and the pixel signal of pixel Pm in pixel unit PU1a, and adds the pixel signal of pixel Pg and the pixel signal of pixel Pm in pixel unit PU1b.

[0173] Furthermore, the image processing unit 115 adds the pixel signal of pixel Pb and the pixel signal of pixel Py in the pixel unit PU2, and adds the pixel signal of pixel Pr and the pixel signal of pixel Pc in the pixel unit PU3. In this way, the image processing unit 115 performs binning processing on the image data 81, and can generate luminance data 82 (luminance information) indicating the luminance value of each pixel, as shown in FIG.

[0174] In this way, the imaging device 1 according to the present embodiment can acquire luminance information by using RGB pixel signals and CMY pixel signals. For example, it can calculate the luminance value for each pixel unit PU. It is possible to obtain an RGB image, a CMY image, and luminance information with a single imaging operation.

[0175] The image processing unit 115 may calculate the luminance value using a correction coefficient for each color temperature. For example, the image processing unit 115 may calculate the luminance value by multiplying the pixel signal (pixel value) of each color by the correction coefficient and adding the multiplied values. The image processing unit 115 may adjust the luminance value obtained from the pixel values ​​of pixels Pg and Pm, the luminance value obtained from the pixel values ​​of pixels Pb and Py, and the luminance value obtained from pixels Pr and Pc.

[0176] 17 and 18 are diagrams illustrating an example of signal processing by the image processing unit of the imaging device according to the embodiment. The image processing unit 115 is configured to be able to execute processing for synthesizing luminance data (luminance information) with RGB image data, for example. As an example, as schematically shown in FIG. 17 , the image processing unit 115 performs white balance adjustment on image data 83 including pixel signals of RGB pixels, followed by binning processing, to generate image data 84.

[0177] As shown in Fig. 17, the image processing unit 115 can generate image data 91 by combining the above-described luminance data 82 with image data 84. For example, when the subject is bright, the image processing unit 115 may perform the process of combining luminance information with RGB information as described above. By performing such a process, it is possible to achieve both high color reproducibility and high resolution. It is possible to obtain image data with high color reproducibility and high resolution.

[0178] The image processing unit 115 is also configured to be able to execute a process of synthesizing luminance data with CMY image data. As an example, as schematically shown in Fig. 18 , the image processing unit 115 performs a white balance adjustment on image data 85 including pixel signals of CMY pixels, and then performs a binning process to generate image data 86.

[0179] The image processing unit 115 performs a matrix operation on image data 86, which is CMY image data, to generate image data 87, which is RGB image data. The image processing unit 115 can generate image data 92 by combining luminance data 82 with the image data 87. For example, when the subject is dark, the image processing unit 115 may perform processing to combine luminance information with CMY information as described above. By performing such processing, it is possible to achieve both a high S / N ratio and high resolution. It is possible to obtain image data with a high S / N ratio and high resolution.

[0180] 19 is a diagram illustrating an example of signal processing by the image processing unit of the imaging device according to the embodiment. The image processing unit 115 is configured to be able to perform HDR (High Dynamic Range) processing that combines image data (image signals). The image processing unit 115 is configured to generate HDR image data based on, for example, RGB pixel signals and CMY pixel signals.

[0181] 19 , the image processing unit 115 combines the image data 84 described above with image data 87 obtained by converting the CMY image data to generate image data 93 as HDR image data. HDR image data can be obtained by using RGB pixel signals and CMY pixel signals. A single image capture can obtain an RGB image, a CMY image, luminance information, and an HDR image.

[0182] 15 , the processing unit 114 of the imaging device 1 may include a phase difference detection unit 116. The phase difference detection unit 116 is configured to acquire phase difference data (phase difference information) based on pixel signals output from phase difference pixels, for example. The phase difference detection unit 116 can also be said to be a phase difference data generation unit that can generate phase difference data.

[0183] 20 and 21 are diagrams for explaining an example configuration of an imaging device according to an embodiment. Fig. 20 shows an example of a planar configuration of the imaging device, and Fig. 21 shows an example of a cross-sectional configuration of the imaging device. The pixel unit 100 of the imaging device 1 may have, for example, pixels PX that can be used for phase difference detection. A plurality of pixels PX may be provided discretely throughout the entire area of ​​the pixel unit 100.

[0184] The pixel PX may have, for example, a plurality of photoelectric conversion units 12 (for example, two or four photoelectric conversion units 12). The pixel PX may be referred to as a phase difference pixel (or an image plane phase difference pixel). As an example, the two photoelectric conversion units 12 of the pixel PX receive light that has passed through different regions of the optical system, thereby performing pupil division.

[0185] The phase difference detection unit 116 can obtain phase difference data by using, for example, a pixel signal based on charges photoelectrically converted by one photoelectric conversion unit 12 of the pixel PX and a pixel signal based on charges photoelectrically converted by the other photoelectric conversion unit 12. By using the phase difference data, phase difference AF (Auto Focus) can be performed.

[0186] The imaging device 1 may include, as the phase difference detection pixels PX, pixels PXa and PXb each having a light-shielding member 28 (light-shielding film), as in the example shown in Figures 22 and 23. In the example shown in Figures 22 and 23, pixels PXa and PXb receive light that has passed through different regions of the optical system, thereby performing pupil division. The phase difference detection unit 116 can obtain phase difference data by using, for example, a pixel signal based on charges photoelectrically converted by pixel PXa and a pixel signal based on charges photoelectrically converted by pixel PXb.

[0187] 24A to 24E are diagrams illustrating an example of a manufacturing method for an imaging device according to an embodiment. First, as shown in Fig. 24A, a filter 25 is formed on a semiconductor layer 10 in which a photoelectric conversion unit 12 is formed. Then, as shown in Fig. 24B, a spacer layer 90 is formed on the filter 25. Furthermore, as shown in Fig. 24C, a member 55 (e.g., a silicon oxide film) is formed on the spacer layer 90.

[0188] Next, the member 55 is selectively removed by lithography and etching to form a plurality of holes in the member 55 as shown in Fig. 24D. Then, as shown in Fig. 24E, structures 51 (e.g., TiO film) are embedded in each hole in the member 55. By the manufacturing method described above, the imaging device 1 shown in Fig. 6 and the like can be manufactured. Note that the manufacturing method described above is merely an example, and other manufacturing methods may also be used.

[0189] [Operations and Effects] The photodetector according to this embodiment includes a semiconductor layer (semiconductor layer 10), an optical layer (optical layer 70) provided above the semiconductor layer and having a plurality of structures, and a first pixel unit (e.g., pixel unit PU1a) including a first pixel (e.g., pixel Pg) having a first photoelectric conversion region (photoelectric conversion unit 12) provided in the semiconductor layer, and two second pixels (e.g., pixels Pm) diagonally positioned, each having a second photoelectric conversion region provided in the semiconductor layer. The first pixel includes a first filter (e.g., filter 25g) provided between the optical layer and the first photoelectric conversion region that transmits light in a first wavelength band. The optical layer includes a first region (e.g., light-collecting region 71a) corresponding to the first pixel and a portion of the second pixel. The optical layer guides light in the first wavelength band incident on the first region to the first filter.

[0190] The photodetector (imaging device 1) according to this embodiment includes an optical layer 70 having a plurality of structures 51. The optical layer 70 includes a light-collecting region 71a corresponding to pixel Pg and a part of pixel Pm. The optical layer 70 guides light in the green wavelength band incident on the light-collecting region 71a to the photoelectric conversion unit 12 of pixel Pg. This makes it possible to improve sensitivity to incident light. It is possible to realize a photodetector capable of improving sensitivity.

[0191] Next, a modified example of the present disclosure will be described. In the following, the same components as those in the above embodiment will be denoted by the same reference numerals, and the description thereof will be omitted as appropriate.

[0192] <2. Modifications> (2-1. Modification 1) In the above-described embodiment, an example configuration of the imaging device 1 has been described, but this is merely an example, and the configuration of the imaging device 1 is not limited to the above-described example. For example, the optical layer 70 of the imaging device 1 may be configured to not have at least one of the light collection regions 72a to 72c described above. As an example, the optical layer 70 may be configured to not have the light collection regions 72a to 72c.

[0193] 25 to 27 are diagrams showing an example of a cross-sectional configuration of an imaging device according to Modification 1 of the present disclosure. Also, FIGS. 28 to 30 are diagrams for explaining an example of the configuration of an imaging device according to Modification 1. In FIG. 28, a light-condensing spot formed when green light is incident is represented by a circle "O". Also, in FIG. 29, a light-condensing spot formed when blue light is incident is represented by a circle "O", and in FIG. 30, a light-condensing spot formed when red light is incident is represented by a circle "O".

[0194] 25 to 27, the optical layer 70 of the imaging device 1 is configured to have a light-collecting region 71a that collects green light onto the pixel Pg, a light-collecting region 71b that collects blue light onto the pixel Pb, and a light-collecting region 71c that collects red light onto the pixel Pr. By configuring the imaging device 1 in this manner, the light-collecting region 71a can collect green light onto the photoelectric conversion unit 12 of the pixel Pg, as in the example shown in FIG.

[0195] 29 and 30 , in the imaging device 1, blue light can be collected onto the photoelectric conversion unit 12 of pixel Pb by light collection region 71b, and red light can be collected onto the photoelectric conversion unit 12 of pixel Pr by light collection region 71c. Therefore, in the case of this modified example as well, it is possible to improve the sensitivity of pixels Pr, Pg, and Pb.

[0196] 25 to 27, the optical layer 70 of the imaging device 1 does not have the light collection regions 72a to 72c. Therefore, compared to a case where the light collection regions 71a to 71c and the light collection regions 72a to 72c are provided in the optical layer 70, the phase difference required in designing the optical layer 70 can be reduced, and the degree of difficulty in designing can be reduced.

[0197] 31 to 33 are diagrams illustrating an example configuration of an imaging device according to Modification 2. For example, as in the example shown in FIG. 31, the imaging device 1 does not have to have the filter 25c (cyan filter), the filter 25m (magenta filter), and the filter 25y (yellow filter). Also, for example, the imaging device 1 may be configured to have only one or two types of filters 25 among the filter 25c, the filter 25m, and the filter 25y.

[0198] For example, as shown in the example of Fig. 32, the imaging device 1 may be configured to include filters 25r, 25g, and 25b, as well as filter 25y. Alternatively, as shown in the example of Fig. 33, the imaging device 1 may be configured to include filter 25c in addition to filters 25r, 25g, and 25b. Alternatively, the imaging device 1 may be configured to include filters 25r, 25g, and 25b, as well as filters 25y and 25c.

[0199] (2-3. Modification 3) FIG. 34 is a diagram illustrating an example configuration of an imaging device according to Modification 3. The imaging device 1 may have a multi-layer (multi-stage) structure 51. The optical layer 70 of the imaging device 1 has, for example, a plurality of structures (structures 51a and 51b in the example shown in FIG. 34) stacked on top of each other. For example, a first-stage structure 51a and a second-stage structure 51b are provided in the element region 60 of each pixel P.

[0200] The optical layer 70 includes an optical layer 171 (first layer) including the structures 51a and the members 55a, and an optical layer 172 (second layer) including the structures 51b and the members 55b. The optical layer 172 is stacked on the optical layer 171. The structures 51a and the structures 51b each have a columnar (pillar) shape, for example.

[0201] The structures 51a and the members 55a may be made of materials having different refractive indices. The structures 51b and the members 55b may be made of materials having different refractive indices. The shapes and numbers of the structures 51a and 51b are not limited to the illustrated example and may be changed as appropriate.

[0202] In the imaging device 1 according to this modification, the optical layer 70 having multiple layer structures (e.g., structures 51a and 51b) can appropriately guide light to the photoelectric conversion unit 12. The multiple-stage metasurface element can efficiently guide light in any wavelength range to the photoelectric conversion unit 12. It is possible to realize an imaging device 1 with good optical characteristics.

[0203] 3. Application Examples The imaging device 1 and the like can be applied to any type of electronic device with an imaging function, for example, a camera system such as a digital still camera or video camera, a mobile phone with an imaging function, etc. Fig. 35 shows a schematic configuration of an electronic device 1000.

[0204] The electronic device 1000 includes, for example, a lens group 1001, an imaging device 1, a DSP (Digital Signal Processor) circuit 1002, a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007, which are interconnected via a bus line 1008.

[0205] The lens group 1001 captures incident light (image light) from a subject and forms an image on the imaging surface of the imaging device 1. The imaging device 1 converts the amount of incident light formed on the imaging surface by the lens group 1001 into an electrical signal on a pixel-by-pixel basis and supplies the signal as a pixel signal to the DSP circuit 1002.

[0206] The DSP circuit 1002 is a signal processing circuit that processes signals supplied from the imaging device 1. The DSP circuit 1002 outputs image data obtained by processing the signals from the imaging device 1. The frame memory 1003 temporarily stores the image data processed by the DSP circuit 1002 on a frame-by-frame basis.

[0207] The display unit 1004 is composed of a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and records image data of moving images or still images captured by the imaging device 1 on a recording medium such as a semiconductor memory or a hard disk.

[0208] The operation unit 1006, in response to a user's operation, outputs operation signals for various functions of the electronic device 1000. The power supply unit 1007 supplies various types of power to the DSP circuit 1002, frame memory 1003, display unit 1004, recording unit 1005, and operation unit 1006 as needed.

[0209] 4. Application Examples (Application Examples to Mobile Bodies) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0210] FIG. 36 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0211] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 36, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0212] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0213] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0214] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0215] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0216] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0217] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0218] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0219] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0220] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 36, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0221] FIG. 37 is a diagram showing an example of the installation position of the imaging unit 12031.

[0222] In FIG. 37, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0223] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0224] 37 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0225] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0226] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation.

[0227] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0228] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0229] An example of a mobile object control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the image capturing unit 12031 of the above-described configuration. Specifically, for example, the image capturing device 1 or the like can be applied to the image capturing unit 12031. By applying the technology according to the present disclosure to the image capturing unit 12031, it becomes possible to obtain high-resolution captured images. It becomes possible to perform high-precision control using captured images in the mobile object control system.

[0230] (Application Example to Endoscopic Surgery System) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0231] FIG. 38 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0232] 38 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0233] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the example shown, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

[0234] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0235] An optical system and an image sensor are provided inside the camera head 11102, and light reflected from the object of observation (observation light) is collected by the optical system onto the image sensor. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to a camera control unit (CCU) 11201 as RAW data.

[0236] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various types of image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0237] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0238] The light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), and supplies the endoscope 11100 with irradiation light when photographing the surgical site, etc.

[0239] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0240] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 inflates the body cavity of the patient 11132 through the insufflation tube 11111 in order to ensure a clear field of view for the endoscope 11100 and a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0241] The light source device 11203, which supplies illumination light to the endoscope 11100 when photographing the surgical site, can be configured from a white light source, such as an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, allowing the light source device 11203 to adjust the white balance of the captured image. In this case, it is also possible to time-share images corresponding to each RGB by irradiating the object of observation with laser light from each RGB laser light source and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, color images can be obtained without providing a color filter to the image sensor.

[0242] Furthermore, the light source device 11203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free from so-called blocked-up shadows and blown-out highlights.

[0243] The light source device 11203 may also be configured to supply light in a predetermined wavelength band corresponding to special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light in a narrower band than the light irradiated during normal observation (i.e., white light) to capture high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, in what is known as narrow band imaging. Alternatively, special light observation may involve fluorescence observation, in which images are obtained using fluorescence generated by irradiating excitation light. Fluorescence observation may involve irradiating excitation light onto body tissues and observing the fluorescence from the tissues (autofluorescence observation), or may involve locally injecting a reagent such as indocyanine green (ICG) into the body tissue and irradiating the tissues with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0244] FIG. 39 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0245] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0246] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

[0247] The imaging unit 11402 is composed of an imaging element. The imaging element constituting the imaging unit 11402 may be a single (so-called single-chip type) or multiple (so-called multi-chip type). When the imaging unit 11402 is composed of a multi-chip type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (dimensional) display. The 3D display allows the surgeon 11131 to more accurately grasp the depth of the biological tissue at the surgical site. Note that when the imaging unit 11402 is composed of a multi-chip type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0248] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

[0249] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

[0250] The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0251] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0252] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0253] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404 .

[0254] The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0255] Furthermore, the communication unit 11411 transmits to the camera head 11102 a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0256] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102 .

[0257] The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0258] Furthermore, the control unit 11413 displays the captured image showing the surgical site, etc., on the display device 11202 based on the image signal subjected to image processing by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition results to superimpose various surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0259] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for electrical signal communication, an optical fiber for optical communication, or a composite cable of these.

[0260] In the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0261] The above describes an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied. Of the above-described configurations, the technology according to the present disclosure can be suitably applied to, for example, the imaging unit 11402 provided in the camera head 11102 of the endoscope 11100. By applying the technology according to the present disclosure to the imaging unit 11402, it is possible to provide a high-definition endoscope 11100.

[0262] Although the present disclosure has been described above by way of embodiments, modifications, application examples, and applied examples, the present technology is not limited to the above-described embodiments, etc., and various modifications are possible. For example, although the modifications described above have been described as modifications of the above-described embodiments, the configurations of the modifications can be combined as appropriate.

[0263] In the above embodiments, an imaging device has been described as an example. However, the photodetector of the present disclosure may be, for example, a device that receives incident light and converts the light into an electric charge. The output signal may be a signal of image information or a signal of ranging information. The photodetector (imaging device) may be applied to an image sensor, a ranging sensor, etc. Note that the present disclosure is not limited to a back-illuminated image sensor, but may also be applied to a front-illuminated image sensor.

[0264] The photodetector according to the present disclosure may also be applied as a distance measuring sensor capable of measuring distances using a time-of-flight (TOF) method. The light receiving element (photoelectric conversion unit) of each pixel may be an avalanche photodiode (APD). The light receiving element may be configured, for example, by a single-photon avalanche diode (SPAD). The photodetector (image capture device) may also be applied as a sensor capable of detecting events, for example, an event-driven sensor (also known as an event vision sensor (EVS), event-driven sensor (EDS), dynamic vision sensor (DVS), etc.).

[0265] A photodetector according to one embodiment of the present disclosure includes a semiconductor layer, an optical layer provided above the semiconductor layer and having a plurality of structures, and a first pixel unit including a first pixel having a first photoelectric conversion region provided in the semiconductor layer, and two second pixels diagonally disposed, each having a second photoelectric conversion region provided in the semiconductor layer. The first pixel includes a first filter provided between the optical layer and the first photoelectric conversion region and transmitting light in a first wavelength band. The optical layer includes a first region corresponding to the first pixel and a portion of the second pixel. The optical layer guides light in the first wavelength band incident on the first region to the first filter. This makes it possible to realize a photodetector capable of improving sensitivity.

[0266] Note that the effects described in this specification are merely examples and are not limited to those described, and other effects may be present. The present disclosure may also have the following configurations. (1) A photodetector comprising: a semiconductor layer; an optical layer provided above the semiconductor layer and having a plurality of structures; and a first pixel unit including a first pixel having a first photoelectric conversion region provided in the semiconductor layer and two second pixels diagonally disposed to each other, each having a second photoelectric conversion region provided in the semiconductor layer, wherein the first pixel has a first filter provided between the optical layer and the first photoelectric conversion region and transmitting light of a first wavelength band; the optical layer includes a first region corresponding to the first pixel and a portion of the second pixel; and the optical layer guides light of the first wavelength band incident on the first region to the first filter. (2) The photodetector described in (1), wherein the optical layer does not focus light of the first wavelength band incident on the first region onto the second photoelectric conversion region. (3) The photodetector according to (1) or (2), wherein the first pixel unit includes two of the first pixels diagonally arranged, and has a 2×2 pixel formed by two of the first pixels and two of the second pixels. (4) The photodetector according to any one of (1) to (3), wherein the first pixel unit includes two of the first pixels diagonally arranged, the optical layer includes a second region corresponding to the second pixel and a part of the first pixel, and the optical layer guides light of a second wavelength band and light of a third wavelength band incident on the second region to the second photoelectric conversion region. (5) The photodetector according to any one of (1) to (4), wherein the second pixel has a second filter that transmits light of the second wavelength band and light of a third wavelength band. (6) The photodetector according to (5), wherein the first pixel unit includes two of the first pixels positioned diagonally to each other, the optical layer includes a second region corresponding to the second pixel and a part of the first pixel, and the optical layer guides the light of the second wavelength band and the light of the third wavelength band incident on the second region to the second filter. (7) The photodetector according to (6), wherein the first region and the second region partially overlap each other.(8) The photodetector according to (5) or (6), wherein the first filter transmits light in one wavelength band selected from a red wavelength band, a green wavelength band, and a blue wavelength band as the light in the first wavelength band, and the second filter transmits light in the other two wavelength bands selected from the red wavelength band, the green wavelength band, and the blue wavelength band as the light in the second wavelength band and the light in the third wavelength band. (9) The photodetector according to any one of (1) to (8), wherein the first pixel unit includes two of the first pixels and two of the second pixels. (10) The photodetector according to (9), further comprising a second pixel unit including two third pixels each having a third photoelectric conversion region provided in the semiconductor layer and two fourth pixels each having a fourth photoelectric conversion region provided in the semiconductor layer, wherein the third pixels have a third filter provided between the optical layer and the third photoelectric conversion region and transmitting light in the second wavelength band. (11) The photodetector according to (10), wherein the fourth pixel has a fourth filter that transmits light in the first wavelength band and light in a third wavelength band. (12) The photodetector according to (10) or (11), further comprising a third pixel unit including two fifth pixels each having a fifth photoelectric conversion region provided in the semiconductor layer and two sixth pixels each having a sixth photoelectric conversion region provided in the semiconductor layer, wherein the fifth pixels have a fifth filter that is provided between the optical layer and the fifth photoelectric conversion region and transmits light in a third wavelength band. (13) The photodetector according to (12), wherein the sixth pixel has a sixth filter that transmits light in the first wavelength band and light in the second wavelength band. (14) The photodetector according to any one of (1) to (13), further comprising a sixth pixel having a seventh photoelectric conversion region and an eighth photoelectric conversion region provided in the semiconductor layer, wherein the sixth pixel is a pixel that can be used for phase difference detection. (15) The photodetector according to (14), wherein the sixth pixel has a light-shielding member provided between the optical layer and the eighth photoelectric conversion region. (16) The photodetector according to any one of (1) to (15), further including a spacer layer provided between the optical layer and the semiconductor layer.(17) The photodetector according to any one of (1) to (16), wherein the structures have a columnar shape. (18) The photodetector according to any one of (1) to (17), wherein a plurality of the structures are arranged side by side in the optical layer. (19) The photodetector according to any one of (1) to (18), wherein the optical layer has a member arranged around the structures, and the structures have a refractive index different from that of the member. (20) An electronic device comprising: an optical system; and a photodetector that receives light that has passed through the optical system, wherein the photodetector has: a semiconductor layer; an optical layer provided above the semiconductor layer and having a plurality of structures; and a first pixel unit including a first pixel having a first photoelectric conversion region provided in the semiconductor layer; and two second pixels that are diagonally positioned to each other and each have a second photoelectric conversion region provided in the semiconductor layer, wherein the first pixel has a first filter that is provided between the optical layer and the first photoelectric conversion region and transmits light of a first wavelength band; the optical layer includes first regions that correspond to the first pixel and a part of the second pixel; and the optical layer guides light of the first wavelength band that is incident on the first region to the first filter.

[0267] This application claims priority based on Japanese Patent Application No. 2024-101379, filed on June 24, 2024, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0268] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. A photodetector comprising: a semiconductor layer; an optical layer provided above the semiconductor layer and having a plurality of structures; and a first pixel unit including a first pixel having a first photoelectric conversion region provided in the semiconductor layer and two second pixels diagonally disposed to each other, each having a second photoelectric conversion region provided in the semiconductor layer, wherein the first pixel has a first filter provided between the optical layer and the first photoelectric conversion region that transmits light of a first wavelength band; the optical layer includes first regions corresponding to the first pixel and a portion of the second pixel; and the optical layer guides light of the first wavelength band that is incident on the first region to the first filter.

2. The photodetector according to claim 1, wherein the optical layer does not focus the light of the first wavelength band incident on the first region onto the second photoelectric conversion region.

3. The photodetector according to claim 1, wherein the first pixel unit includes two of the first pixels positioned diagonally to each other, and has a 2x2 pixel structure consisting of two of the first pixels and two of the second pixels.

4. The photodetector according to claim 1, wherein the first pixel unit includes two of the first pixels positioned diagonally to each other, the optical layer includes a second region corresponding to the second pixel and a part of the first pixel, and the optical layer guides light of the second wavelength band and light of the third wavelength band incident on the second region to the second photoelectric conversion region.

5. The photodetector according to claim 1, wherein the second pixel has a second filter that transmits light in the second wavelength band and light in the third wavelength band.

6. The photodetector according to claim 5, wherein the first pixel unit includes two of the first pixels positioned diagonally to each other, the optical layer includes a second region corresponding to the second pixel and a part of the first pixel, and the optical layer guides the light of the second wavelength band and the light of the third wavelength band incident on the second region to the second filter.

7. The photodetector device according to claim 6, wherein the first region and the second region partially overlap each other.

8. The photodetector according to claim 5, wherein the first filter transmits light in one of the red, green, and blue wavelength bands as the light in the first wavelength band, and the second filter transmits light in the other two of the red, green, and blue wavelength bands as the light in the second wavelength band and the light in the third wavelength band.

9. The photodetector device according to claim 1, wherein the first pixel unit includes two of the first pixels and two of the second pixels.

10. The photodetector device according to claim 9, further comprising a second pixel unit including two third pixels each having a third photoelectric conversion region provided in the semiconductor layer and two fourth pixels each having a fourth photoelectric conversion region provided in the semiconductor layer, wherein the third pixels have a third filter provided between the optical layer and the third photoelectric conversion region that transmits light in a second wavelength band.

11. The photodetector according to claim 10, wherein the fourth pixel has a fourth filter that transmits light in the first wavelength band and light in the third wavelength band.

12. The photodetector device of claim 10, further comprising a third pixel unit including two fifth pixels each having a fifth photoelectric conversion region provided in the semiconductor layer and two sixth pixels each having a sixth photoelectric conversion region provided in the semiconductor layer, wherein the fifth pixels have a fifth filter provided between the optical layer and the fifth photoelectric conversion region that transmits light in a third wavelength band.

13. The photodetector according to claim 12, wherein the sixth pixel has a sixth filter that transmits light in the first wavelength band and light in the second wavelength band.

14. The photodetector according to claim 1, further comprising a sixth pixel having a seventh photoelectric conversion region and an eighth photoelectric conversion region provided in the semiconductor layer, the sixth pixel being a pixel that can be used for phase difference detection.

15. The photodetector according to claim 14, wherein the sixth pixel has a light-shielding member provided between the optical layer and the eighth photoelectric conversion region.

16. The photodetector device according to claim 1, further comprising a spacer layer provided between the optical layer and the semiconductor layer.

17. The photodetector according to claim 1, wherein the structure has a columnar shape.

18. The photodetector device according to claim 1, wherein a plurality of the structures are arranged side by side in the optical layer.

19. The photodetector according to claim 1, wherein the optical layer has a member provided around the structure, and the structure has a refractive index different from that of the member.

20. An electronic device comprising: an optical system; and a photodetector that receives light that has passed through the optical system, wherein the photodetector has: a semiconductor layer; an optical layer provided above the semiconductor layer and having a plurality of structures; and a first pixel unit including a first pixel having a first photoelectric conversion region provided in the semiconductor layer; and two second pixels that are diagonally positioned to each other and each have a second photoelectric conversion region provided in the semiconductor layer, wherein the first pixel has a first filter that is provided between the optical layer and the first photoelectric conversion region and transmits light of a first wavelength band; the optical layer includes first regions that correspond to the first pixel and a part of the second pixel; and the optical layer guides light of the first wavelength band that is incident on the first region to the first filter.

Images