Simplifying the insulation of a temperature sensor by pairing the sensor with a high-side driver for an electrical signaling process and by physically connecting the sensor to a low-side transistor

Abstract

A power semiconductor circuit is equipped with a first driver circuit (HT) and a first semiconductor switch (HS) which is controlled by the first driver circuit and is connected to a first reference potential (HV+). A second driver circuit (LT) and a second semiconductor switch (LS) which is controlled by the second driver circuit are provided, the second semiconductor switch being connected to a second reference potential (HV-). The first and the second semiconductor switch (LS) are connected together in series. Furthermore, a temperature sensor (T) is provided which is galvanically connected to a temperature input (T1, T2) of the first driver circuit (HT) and which is provided on the second semiconductor switch (LS) and is connected thereto so as to transfer heat. The invention also relates to a corresponding power converter.

Description

[0001] Description

[0002] Simplifying the isolation of a temperature sensor by assigning the signal electrically to a high-side driver and physically to a low-side transistor.

[0003] Vehicles with an electric drive system have a battery to supply a traction inverter with direct current. In typical power classes of 100-200 kW, and also in higher power classes, high voltages of more than 60 V are required to achieve this power output, especially typically 400 V or 800 V. Therefore, special insulation measures are necessary to protect against dangerous touch voltages. Furthermore, even at high efficiency, the inverter generates power losses, which are dissipated as heat at the inverter's semiconductor switches. Temperature monitoring of the inverter's semiconductor switches (power semiconductors) is therefore required in the aforementioned power classes.

[0004] To reduce errors in temperature monitoring, which arise particularly from thermal resistance between the temperature sensor and the heat source, one approach is to place the temperature sensor as close as possible to the heat source, i.e., to the semiconductor switch. However, this necessitates complex insulation measures when routing the temperature sensor signal via signal lines to prevent the signal lines from transmitting a dangerous potential to circuit sections that are not adequately insulated.

[0005] Accurate temperature measurement through a short distance between the temperature sensor and the semiconductor switch is thus associated with high insulation costs (which can itself lead to temperature errors), while a greater distance between the temperature sensor and the semiconductor switch, for example to implement insulation measures, leads to significant measurement errors in temperature monitoring, especially in the case of large temperature changes at the heat source. It is therefore an object of the invention to demonstrate a method by which sufficiently precise temperature measurement in power semiconductor circuits can be achieved in a simple manner. This object is achieved by the subject matter of the independent claims.

[0006] Further properties, features, embodiments and advantages will become apparent from the dependent claims, the description and the figure.

[0007] It is proposed that in a power semiconductor circuit with a first and a second semiconductor switch connected to different reference potentials, a temperature sensor is electrically connected to a first driver circuit of the first semiconductor switch for signal derivation and is located at the second semiconductor switch (i.e., another semiconductor switch) for temperature sensing. In other words, it is proposed that the temperature sensor be spatially, physically, and thermally associated with the second semiconductor switch (which is referenced to the second potential), while the signal derivation from the temperature sensor is carried out via the driver circuit of the first semiconductor switch (i.e., the other semiconductor switch). This results in precise temperature sensing without the need for costly electrically isolated sensors or the complex galvanic isolation of a non-isolated temperature sensor.

[0008] There is a heat-transferring (and possibly also electrically conductive) connection between the temperature sensor and the second power semiconductor (connected to the second reference potential), and a (galvanically non-isolating) signal-transmitting connection between the temperature sensor and the driver circuit of the first semiconductor switch. This driver circuit is associated with the first reference potential (since it controls the first semiconductor switch, which is connected to the first reference potential). A general approach is to assign the temperature sensor, for monitoring and heat conduction purposes, to a component (second semiconductor switch) that is connected to a different supply potential than the component (first driver circuit) to which the temperature sensor is connected for signal transmission.

[0009] Since the reference potential of the first driver circuit corresponds to the reference potential of the first semiconductor switch it controls, and in particular, since the reference potential of the first driver circuit corresponds to the upper potential of the second semiconductor switch, there is no potential difference between the reference potential of the first driver circuit and areas of the second semiconductor switch. This applies especially to areas of the second semiconductor switch that are connected to the first semiconductor switch and thus exhibit the upper potential of the second semiconductor switch. As a result, the insulation requirements for the temperature sensor with respect to the second semiconductor switch are greatly simplified, or even eliminated entirely, even in high-voltage applications.

[0010] A power semiconductor circuit with a first and second semiconductor switch is therefore proposed. The semiconductor switches are connected in series (preferably directly or via a galvanic connection). The first semiconductor switch is connected to a first supply potential, while the second semiconductor switch is connected to a second supply potential. The supply potentials are DC potentials. Specifically, a first terminal of the first semiconductor switch is connected to the first supply potential, and a first terminal of the second semiconductor switch is connected to the second supply potential. These terminals are part of the power path of the respective semiconductor switch. These terminals are also referred to as the external terminals. The first and second semiconductor switches each have a second terminal that is opposite to their respective first terminal.The second terminals are connected together, resulting in a series connection of the two semiconductor switches. These second terminals are also part of the power path of their respective semiconductor switches. Specifically, the switchable portion of the power path of the first and second semiconductor switches runs from the first to the second terminal. These second terminals can also be referred to as inner terminals.

[0011] The second semiconductor switch is controlled by a second driver circuit. The reference potential of the first driver circuit essentially corresponds to the reference potential of the second (inner) terminal of the first semiconductor switch. The reference potential of the second driver circuit essentially corresponds to the reference potential of the first (outer) terminal of the second semiconductor switch. The two driver circuits therefore have different reference potentials.

[0012] The power semiconductor circuit includes a temperature sensor comprising electrically conductive elements. The temperature sensor can be implemented as an NTC resistor, a PTC resistor (i.e., a cold or hot conductor), a thermocouple, a temperature-dependent semiconductor element (diode, etc.), a temperature sensor with temperature-dependent vibration or magnetic properties, a mechanical temperature switch, or, more generally, as a non-optical temperature sensor (elements with temperature-dependent resistance) or non-optical temperature element. The temperature sensor has a signal output that is conductively (galvanically non-isolated) connected to the temperature-sensing surface or to the temperature-sensing body / element of the sensor. The temperature sensor is connected to the first driver circuit via at least one of these signal outputs or contacts. This connection is galvanically conductive, i.e., galvanically non-isolated.In the case of a temperature sensor with a temperature-dependent resistance value or a temperature element with a temperature-dependent current or voltage, the temperature sensor has (at least) two potentials, preferably one of which is connected to the first driver circuit. The temperature sensor can be connected, in particular, to an A / D converter input of the first driver circuit or to another input for analog signals of the first driver circuit. The connection can include a resistor and similar components, optionally also filter elements, but in particular no galvanic isolation that would separate the driver circuit from the temperature sensor.

[0013] The temperature sensor is connected to the first driver circuit via a temperature input. The temperature input has (at least) two potentials, at least one of which is galvanically connected to at least one potential of the temperature sensor. These potentials can be implemented as contacts and / or as sections of a conductor track, or as sections of a bonded connection, solder joint, sintered connection, plug connection, or similar.

[0014] The temperature sensor can have a protective layer that is electrically insulated, and this can also apply to the heat-transferring connector or a thermal paste layer. However, no special conditions are attached to the electrical insulation properties of the protective layer, and in particular, it is not necessary to design the insulation properties in such a way that they meet the voltage requirements between the potentials of the circuit.

[0015] The temperature sensor is in particular arranged on a section of the semiconductor switch which is electrically conductive and which essentially has the reference potential of the first driver circuit.

[0016] The semiconductor switch can be mounted on an electrically conductive surface (e.g., a section of a conductor track), and the temperature sensor can also be mounted on this electrically conductive surface, preferably next to the semiconductor switch. The temperature sensor can thus be attached to and electrically connected on the same conductive surface as the semiconductor switch. The section of the semiconductor switch or the surface on which the temperature sensor (in particular, a heat-transferring and galvanically conductive surface) is mounted has a potential corresponding to the reference potential of the first driver circuit. The section of the semiconductor switch or the surface on which the temperature sensor (in particular, a heat-transferring and galvanically conductive surface) is mounted is connected to the second supply potential via the second semiconductor switch (or to the first supply potential via the first semiconductor switch).The section of the semiconductor switch, or the surface on which the temperature sensor (particularly heat-transferring and galvanically conductive) is mounted, is connected to an internal terminal of one of the semiconductor switches. The temperature sensor is preferably mounted on the section or surface by means of an electrically conductive connection, or one that electrically connects the section or surface to the temperature sensor. Alternatively, a mechanically insulating connection is conceivable, the insulating properties of which do not necessarily have to meet the insulation requirements necessitated by the voltage between the reference potentials.

[0017] The temperature sensor is connected to the second semiconductor switch via a heat transfer connection. Specifically, the temperature sensor is physically connected to the second semiconductor switch, or to a heat-transferring connector that is connected to the semiconductor switch. The connector can be metallic, for example, in the form of a conductor track section. The physical connection of the temperature sensor to the second semiconductor switch is heat-transferring and, in particular, galvanically conductive. The second semiconductor switch can be mounted on a conductive surface, such as a conductor track section. In this embodiment, the temperature sensor is also mounted on this conductive surface. The second semiconductor switch can have a bottom surface that is mechanically (and electrically) connected to the conductive surface, for example, via a solder or sintered connection. The temperature sensor is mounted (electrically conductive) on this surface.The second semiconductor switch can be mounted on a first surface section of the conductive area (thereby electrically connecting the semiconductor switch to it), with the sensor being mounted on a second surface section of the same area, preferably at a distance of no more than 30 mm, 20 mm, 10 mm, 5 mm, or 2 mm. The sensor and the second semiconductor switch can thus be arranged side by side on the same surface. The surface is, in particular, a copper cladding or copper sheet of a substrate, such as a printed circuit board. The surface is, in particular, connected to the drain or collector of the second semiconductor switch (i.e., to an internal terminal of the semiconductor switch).

[0018] The temperature sensor is preferably galvanically connected to a terminal of the second semiconductor switch, in particular to a drain or collector terminal of the semiconductor switch. The temperature sensor is preferably arranged on a conductive section of the semiconductor switch or on a conductive surface that is potential-transmitting to the drain or collector of the semiconductor switch and is preferably electrically connected to this section or surface. The connection between the sensor and the surface or section preferably involves only one terminal of the temperature sensor. The at least one other terminal of the temperature sensor is (galvanically) connected to the first driver circuit, i.e., the driver circuit of this semiconductor switch.

[0019] Preferably, the first reference potential is more positive than the second reference potential. A supply voltage exists between the reference potentials (during operation); the external terminals of the semiconductor switches are configured for connection to the supply voltage (generally: voltage between the reference potentials). The first reference potential corresponds, in particular, to the positive terminal of a supply voltage, and the second reference potential corresponds, in particular, to the negative terminal of this supply voltage.

[0020] The first semiconductor switch can be configured as a high-side switch of the power semiconductor circuit. The first driver circuit can be configured as a high-side driver of the power semiconductor circuit. The second semiconductor switch can be configured as a low-side switch of the power semiconductor circuit. The second driver circuit can be configured as a low-side driver of the power semiconductor circuit. The semiconductor switches can form a half-bridge. The ends of this half-bridge are preferably connected to the reference potentials and correspond in particular to the outer terminals of the semiconductor switches.

[0021] The power semiconductor circuit preferably has a control connection for connecting a higher-level control device. The control connection is configured to receive control signals, in particular control signals such as pulse-width modulated (PWM) signals. Preferably, the control connection is connected to the first driver circuit via galvanic isolation. This galvanic isolation is configured for the transmission of data signals. The galvanic isolation can be implemented as an optocoupler, capacitive coupling, transformer coupling, radio link, or a combination thereof.

[0022] The first circuit section (of the power semiconductor circuit), containing the first driver circuit and / or the first semiconductor switch, can be arranged adjacent to the second circuit section (of the power semiconductor circuit), containing the second driver circuit and / or the second semiconductor switch. A circuit section is defined as a topological section (electrically connected section) of a circuit that does not necessarily have an electromechanical equivalent as a bounded area in the circuit layout. Preferably, there is an electrical (galvanic) connection. The temperature sensor (or at least one terminal or contact thereof) is connected to the first driver circuit via this connection, particularly in a galvanically conductive manner. The connection bridges any potential gap.The existing gap between the first and second circuit sections, in particular a separating strip, exists between the two circuit sections. In addition to the aforementioned connection, there is another connection that links the two semiconductor switches, specifically the source of the first semiconductor switch (high side) to the drain of the second semiconductor switch (low side). This connection also extends from the first to the second circuit section and leads, in particular, from a first area containing the first semiconductor switch to a second area containing the second semiconductor switch.

[0023] The connection leading to the temperature sensor runs from a temperature input of the first driver circuit to a (conductive) section of the second semiconductor switch, or a (conductive) area connected to the second semiconductor switch, which leads to the second reference potential via a switchable section of the second semiconductor switch. In other words, this section or area is connected to an internal terminal of one of the semiconductor switches.

[0024] The first driver circuit is preferably configured to output a temperature signal via a temperature output of the first driver circuit, indicating a temperature detectable by the temperature sensor. If a higher-level control unit is provided, the temperature output is preferably connected to it for signal transmission or can be connected to it. The temperature output of the driver circuit is preferably connected to the higher-level control unit (or a signal connection therefor) via galvanic isolation. The galvanic isolation can be provided as an optocoupler, as capacitive coupling, as transformer coupling, as a radio link, or as a combination thereof.The first driver circuit is connected to the higher-level control unit or a signal connection thereto, whereby control signals can be transmitted from the higher-level control unit or a signal connection thereto to the driver circuits (or at least the first driver circuit) (in particular via galvanic isolation, e.g., via an optocoupler), and a temperature signal can be transmitted from the first driver circuit to a higher-level control unit or to a signal connection thereto. The transmission path in question is galvanically isolated or at least provides a potential difference. The higher-level control unit can be a microprocessor or microcontroller. The control unit can furthermore implement (preferably) space vector-based motor control (field control) or at least PWM generation.

[0025] Embodiments provide that the temperature sensor has no insulation with respect to a potential at a terminal of the second semiconductor switch that is opposite to a terminal of the second semiconductor switch connected to the second reference potential (e.g., an inner terminal), or insulation whose nominal or maximum voltage is not greater than the voltage between the first and second reference potentials, i.e., which does not meet the insulation requirements of the nominal voltage between the reference potentials. Alternatively, insulation may be provided that does meet these insulation requirements. This would result in redundancy with respect to insulation, or insulation that remains effective even if a connection between the inner terminals of the circuit breakers is broken and thus a voltage may exist between the inner terminals of the circuit breakers (i.e.,between the first driver circuit and the more positive terminal of the two terminals of the second power semiconductor).

[0026] The power transistors are preferably IGBTs or MOSFETs. The power transistors are designed for reverse voltages of at least 100 V, 400 V, or 1000 V. The power transistors have a (continuous) current-carrying capacity of at least 10 A, 50 A, or 100 A. The power transistors can be implemented as individual transistor elements or as a parallel connection of several transistor elements to multiply the current-carrying capacity.

[0027] A multi-phase power converter can be provided, with a power semiconductor circuit as described herein being provided in each phase. The power converter can include a higher-level control unit. This control unit is connected in each phase to the respective first driver circuit of the phase via galvanic isolation (optocoupler, capacitive or transformer isolation, radio link). This allows the control unit to perform multi-phase control. The power converter is, in particular, a vehicle power converter, such as a vehicle charging converter, vehicle charging rectifier (e.g., implemented as a power factor correction filter (PFC)), or preferably a vehicle traction inverter. The power converter can be configured as a (vehicle) inverter, as a vehicle-side or charging station-side charging rectifier, or as a vehicle-side or charging station-side power factor correction filter (PFC).Exemplary designs include the implementation of the power converter as an inverter, in which the power switches are designed as a BnC circuit, where n corresponds to twice the number of phases, approximately 6.

[0028] The semiconductor switches can be mounted on a first substrate, and the driver circuits can be mounted on a second substrate, with these two substrates (e.g., printed circuit boards) being interconnected for signal transmission, preferably via signal-transmitting galvanic isolation (on the first or second substrate). The semiconductor switches can furthermore be mounted on a first (area) section of a substrate, and the driver circuits can be mounted on a second (area) section of the substrate, with these two sections being interconnected for signal transmission and also galvanically conductively. A region without conductive material can be provided between the sections, preferably occupying the entire boundary between the sections. At least the connection leading to the temperature sensor (i.e., the connection between the sensor and the first driver circuit) bridges this boundary.

[0029] Figure 1 shows a power semiconductor circuit controlled via a control terminal SA by an (external) higher-level control device C. The connection leads from the control device via the control terminal SA to a galvanic isolation device GT, through which the control terminal SA is connected to a first driver circuit HT. A second driver circuit LT can also be controlled via the control terminal SA, the corresponding (galvanically isolated) signal-transmitting connection being omitted for clarity. The control terminal SA is connected via the galvanic isolation device GT (e.g., an optocoupler) to an input E of the first driver circuit HT. An input (not shown) of the second driver circuit LT can also be connected to the control terminal for signal transmission, preferably via the galvanic isolation device. The first driver circuit HT has an output A.A temperature signal TS (preferably via galvanic isolation GT', such as another optocoupler) can be transmitted to the higher-level control device C via this connection. This connection is shown symbolically by the dashed arrow in Fig. 1. A corresponding connection preferably also exists between the control device C and the second driver circuit, but this is not shown for clarity. The isolation provided by the galvanic isolation (e.g., optocoupler) is symbolically denoted IS. The signals between the control device C on the one hand and the driver circuits HA and LA on the other hand are transmitted across this isolation. At least one temperature input T1, T2 (which will be explained in more detail below) receives a sensor signal (from temperature sensor T), which is output as signal TS, either unprocessed or processed.The signal TS can represent the sensor signal of the temperature sensor T with continuous values, discrete values ​​or as the result of a threshold comparison (indicating whether a threshold has been exceeded or not).

[0030] The power semiconductor circuit has a first driver circuit HT and a second driver circuit LT, with the first driver circuit HT located in a first circuit section HA. The second driver circuit LT is located in a second circuit section LA. The first circuit section HA can be considered the high-side section of the circuit, while the second circuit section LA can be considered the low-side section. Circuit section HA also has a first semiconductor switch HS. The second circuit section LA has a second semiconductor switch LS. The semiconductor switches HS and LS are connected in series, forming a half-bridge. The semiconductor switches HS and LS are designed as MOSFETs, with the drain D of the second power switch LS connected to the source of the first power switch HS. The gates G of the two power switches are connected to the corresponding first and second power switches, respectively.The second driver circuit is connected. Each driver circuit HT, LT has a driver output HAS, LAS, which is used to control the first semiconductor switch HS (highside) or the second semiconductor switch LS (lowside), respectively. A first diode HD connects a drain signal input HRS of the first driver circuit HT to the drain D of the first semiconductor switch HS. A second diode D connects a drain signal input LRS of the second driver circuit LT to the drain D of the second semiconductor switch LS. The current-carrying directions of the diodes D are shown. The inputs HRS, LRS are used to receive a feedback signal originating from the respective drain; the feedback signal HRS is thus a high-side feedback signal from the drain D of the first semiconductor switch HS (highside), while the feedback signal LRS is a low-side feedback signal from the drain of the second semiconductor switch LS (lowside).

[0031] The semiconductor switches HS and LS are each arranged in their respective area regions HB and LB. A temperature sensor T (hereinafter referred to as sensor T) of the power semiconductor circuit is located in the area region LB, where the second semiconductor switch LS is situated. Specifically, the temperature sensor T is located in the area where the drain potential D exists. The temperature sensor T is thus located on the second semiconductor switch LS, specifically on the side of the semiconductor switch LS where the drain terminal or inner terminal of the second semiconductor switch LS is located. The temperature sensor T is therefore positioned opposite the side of the semiconductor switch LS that is directly connected to the second supply potential HV. Rather, the temperature sensor T is positioned on the side of the semiconductor switch LS that is connected to the first semiconductor switch HS.Preferably, a conductive mounting surface on which the semiconductor switch LS is provided has the potential of the drain D of the semiconductor switch LS; the sensor T is mounted on this surface. The semiconductor switches LS and HS each have a gate G, a source D, and a drain D, wherein the source S of the semiconductor switch HS is connected to the drain D of the semiconductor switch LS. In particular, the sensor T is electrically connected to this mounting surface; in the case of a (particularly insufficiently) insulated sensor located on this mounting surface, this insulation (which at least partially surrounds the sensor) is not stressed during fault-free operation due to the potential identity between sensor T and the mounting surface. Such insulation can serve as (insulation) redundancy for high-voltage protection.The insulation can be achieved by an insulating housing (which is insufficient for the nominal voltage) or by a protective coating of the sensor T (which is insufficient for the nominal voltage).

[0032] A connection V between the first driver circuit HT and the temperature sensor T leads from the first circuit section HA to the second circuit section LA. Specifically, this connection V leads from the first circuit section HA, or from the driver circuit HT, to the area LB, where the semiconductor switch LS is located. Circuit sections LA and HA are adjacent, with connection V bridging this spatial separation (or an area section between them). This also applies to circuit section LA and the area LB, where the second semiconductor switch LS (lowside) is located.

[0033] The temperature sensor T of Figure 1 is galvanically connected to the first driver circuit HT (via connection V), specifically to two temperature terminals T1 and T2 of the first driver circuit HT. The first temperature terminal T1 is connected to a first side of the temperature sensor T. A second temperature terminal T2 is connected to the opposite, second side of the temperature sensor. This second side of the temperature sensor T is also connected to the drain D of transistor LS, i.e., to the terminal of the transistor opposite the second supply potential HV-. The temperature sensor T is thus galvanically connected (directly or via a resistor or similar) to the (two-terminal) temperature input T1, T2 of the first driver circuit HT. The temperature sensor T, or rather a first side thereof, is connected to a first temperature input T1 of the first driver circuit HT.The opposite side of sensor T is also connected to the temperature input of the driver circuit HT, specifically to a second temperature input T2. Furthermore, temperature sensor T, particularly its latter side (i.e., the side connected to T2), is connected to the side of power switch LS that is connected to the first power switch HS, or to the side of the first power switch HS that is opposite to the terminal of switch HS connected to HV+. A power converter may be provided that has several half-bridges or phases, each of which has a semiconductor circuit with transistors HS and LS, or each of which has several such semiconductor circuits, wherein in each half-bridge the transistors HS and the transistors LS are connected in parallel.Each half-bridge can have one temperature sensor (or multiple temperature sensors) such as temperature sensor T.

[0034] The transistors HS, LS and the driver circuits LT, HT can be placed on different substrates or on the same substrate. The control device C can be placed on the same substrate or on a different substrate than the driver circuits LT, HT.

Claims

Patent claims 1. Power semiconductor circuit comprising a first driver circuit (HT) and a first semiconductor switch (HS) controlled by it, which is connected to a first reference potential (HV+), and a second driver circuit (LT) and a second semiconductor switch (LS) controlled by it, which is connected to a second reference potential (HV-), wherein the first and the second semiconductor switches (LS) are connected in series, and a temperature sensor (T) which is galvanically connected to a temperature input (T1, T2) of the first driver circuit (HT) and which is arranged on the second semiconductor switch (LS) and is connected to it in a heat-transferring manner.

2. Power semiconductor circuit according to claim 1, wherein the temperature sensor (T) is galvanically connected to a terminal of the second semiconductor switch (LS).

3. Power semiconductor circuit according to claim 1 or 2, wherein the first reference potential (HV+) is more positive than the second reference potential (HV-).

4. Power semiconductor circuit according to claim 1, 2 or 3, wherein the semiconductor switches (HS, LS) form a half-bridge circuit.

5. Power semiconductor circuit according to one of the preceding claims, wherein the power semiconductor circuit has a control connection (SA) configured for connecting a higher-level control device (C), wherein the control connection (SA) is connected to the first driver circuit (HT) via a galvanic isolation (GT).

6. Power semiconductor circuit according to one of the preceding claims, wherein a first circuit section (HA) in which the first driver circuit (HT) and the first semiconductor switch (HS) are located is arranged next to a second circuit section (LA) in which the second driver circuit (LT) and the second semiconductor switch (LS) are located, and wherein an electrical connection (V) through which the temperature sensor (T) is connected to the first driver circuit (HT), from the first Circuit section (HA) leads to the second circuit section (LA).

7. Power semiconductor circuit according to one of the preceding claims, wherein the first driver circuit (HT) is configured to output a temperature signal (TS) via a temperature output (A) of the first driver circuit (HT), which indicates a temperature detectable by the temperature sensor (T).

8. Power semiconductor circuit according to one of the preceding claims, wherein the temperature sensor (T) has no insulation with respect to a potential at a terminal (D) of the second semiconductor switch (LS) which is opposite to a terminal (S) of the second semiconductor switch (LS) connected to the second reference potential (HV-).

9. Multi-phase power converter, wherein a power semiconductor circuit according to one of the preceding claims is provided in each phase, wherein the power converter has a superior control unit (C) which is connected in each phase via a respective galvanic isolation (GT) to the respective first driver circuit (HT) of the phase concerned.

10. Power converter according to claim 9, which is configured as an inverter, rectifier or power factor correction filter.

Images