Epoxy resin composition, cured product, semiconductor device, and method for producing semiconductor device

Abstract

Provided is an epoxy resin composition which hardly causes warpage of a wafer after molding. Also provided are: a cured product of the epoxy resin composition; a semiconductor device comprising the cured product; and a method for producing the semiconductor device.　More specifically, the epoxy resin composition contains: an epoxy resin (A); a compound (B) containing a carbonate group (-O-(C = O)-O-) and / or an ether group (- O -) in the molecule; an inorganic filler (C); and a curing accelerator (D).

Description

Epoxy resin composition, cured product, semiconductor device, and method for manufacturing semiconductor device

[0001] The present invention relates to an epoxy resin composition, a cured product, a semiconductor device, and a method for producing a semiconductor device.

[0002] Many semiconductor elements, such as integrated circuits, that make up semiconductor devices are used in a state where they are encapsulated with an encapsulant. There are several methods for encapsulating semiconductor elements, one of which is known as compression molding. Compression molding involves placing a liquid or granular resin encapsulant into a mold, heating and melting it as needed, and compressing and molding it. This method is suitable for producing relatively large molded products. In recent years, compression molding has been increasingly used to encapsulate semiconductor elements. This is due in part to the widespread use of wafer-level chip-size packaging technology. This technology involves compression molding using an encapsulant (compression molding material) at the wafer stage, hardening it to encapsulate multiple semiconductor elements at once, and then separating them into individual pieces.

[0003] Conventional curable resin compositions used for encapsulating semiconductor elements by compression molding have generally been solid (e.g., granular) compositions. However, in recent years, with the development of new compression molding techniques, liquid curable resin compositions have increasingly been used. Such liquid curable resin compositions are called liquid compression molding (LCM) materials. Liquid epoxy resin compositions are used as LCM materials from the viewpoint of balancing various properties such as electrical properties, moisture resistance, heat resistance, mechanical properties, and adhesiveness.

[0004] Compared to methods in which semiconductor elements are diced and then sealed, wafer-level chip size packaging offers higher productivity, but the problem is that the wafer is prone to warping after molding (sealing).Warping of the wafer can have adverse effects, such as insufficient wafer fixation, in subsequent processes such as transportation, grinding, and dicing, which can result in reduced reliability of the semiconductor device.

[0005] In order to solve these problems, various encapsulants have been investigated. For example, Patent Document 1 discloses a liquid encapsulating epoxy resin composition containing a liquid bisphenol-type epoxy resin, silicone rubber fine particles, a silicone-modified epoxy resin, an aromatic amine curing agent, an inorganic filler, and an organic solvent. Also, Patent Document 2 discloses a liquid encapsulating epoxy resin composition containing a liquid epoxy resin, an aromatic amine curing agent, fine particles of a core-shell silicone polymer consisting of a solid silicone polymer core and an organic polymer shell, an inorganic filler, and an organic solvent.

[0006] JP 2007-023272 A JP 2008-150555 A

[0007] However, even when these epoxy resin compositions are used as LCM materials, there is a problem in that warpage occurs in the wafer after molding (sealing).

[0008] Therefore, an object of the present invention is to provide an epoxy resin composition that is less likely to cause warpage in wafers after molding. It is also an object of the present invention to provide a cured product of the epoxy resin composition, a semiconductor device including the cured product, and a method for manufacturing the semiconductor device. Hereinafter, "warpage of wafers after molding" may be simply referred to as "warpage."

[0009] As a result of extensive research into achieving the above object, the present inventors have found that the problem can be solved by using a composition having a specific structure. The present invention was completed based on these findings.

[0010] That is, the present invention provides an epoxy resin composition comprising: an epoxy resin (A); a compound (B) containing a carbonate group (—O—(C═O)—O—) and / or an ether group (—O—) in the molecule; an inorganic filler (C); and a curing accelerator (D).

[0011] The compound (B) preferably contains a carbonate group (—O—(C═O)—O—).

[0012] The compound (B) preferably has a polytetramethylene ether structure in the molecule.

[0013] The compound (B) preferably has at least one substituent selected from the group consisting of a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, and a (meth)acryloyl group.

[0014] The substituent in the compound (B) is preferably at least one selected from the group consisting of a hydroxyl group and an epoxy group.

[0015] The compound (B) is represented by the following formula (1): [In the formula, n １ is an integer of 1 or more. １ are the same or different and are a carbonate group (-O-(C=O)-O-), an ether group (-O-), an ester group (-(C=O)-O- or -O-(C=O)-), or an amide group (-NH-(C=O)- or -(C=O)-NH-). １ At least one of R is a carbonate group (—O—(C═O)—O—) or an ether group (—O—). １ and R ２ are the same or different and each is a linear or branched alkylene group. １ and Y ２ are the same or different and each represents a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

[0016] The compound (B) is represented by the following formula (2): [In the formula, n １１ is an integer of 1 or more. ２１ is an integer of 0 or greater. ２ are the same or different and are an ether group (-O-), an ester group (-(C=O)-O- or -O-(C=O)-), or an amide group (-NH-(C=O)- or -(C=O)-NH-). １１ , R ２１ , and R ３１ are the same or different and each is a linear or branched alkylene group. １１ and Y ２１are the same or different and each represents a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

[0017] The compound (B) is represented by the following formula (3): [In the formula, n １２ is an integer of 1 or more. ２２ is an integer of 0 or greater. １２ , R ２２ , and R ３２ are the same or different and each is a linear or branched alkylene group. １２ and Y ２２ are the same or different and each represents a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

[0018] The compound (B) is represented by the following formula (4): [In the formula, n １３ is an integer of 1 or more. ２３ is an integer of 0 or greater. ３ are the same or different and are an ester group (-(C=O)-O- or -O-(C=O)-) or an amide group (-NH-(C=O)- or -(C=O)-NH-). １３ , R ２３ , and R ３３ are the same or different and each is a linear or branched alkylene group. １３ and Y ２３ are the same or different and each represents a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

[0019] The compound (B) is represented by the following formula (5): [In the formula, n １４ is an integer of 1 or more. １４ and R ２４ are the same or different and each is a linear or branched alkylene group. １４ and Y ２４are the same or different and each represents a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

[0020] The molecular weight of the compound (B) (number average molecular weight when there is a molecular weight distribution) is preferably 200 to 6,000.

[0021] The content of the compound (B) relative to the epoxy resin composition (100% by mass) is preferably 0.1 to 30% by mass.

[0022] The Tg of the cured product of the epoxy resin composition is preferably 100°C or higher.

[0023] The epoxy resin composition preferably further contains a curing agent (E).

[0024] The content of the curing agent (E) relative to the epoxy resin composition (100% by mass) is preferably 0.01 to 5% by mass.

[0025] The epoxy resin composition is preferably a liquid compression molding material.

[0026] The present invention also provides a cured product of the above epoxy resin composition.

[0027] The present invention also provides a semiconductor device comprising the above-mentioned cured product.

[0028] The present invention also provides a semiconductor device comprising: a support; a semiconductor element mounted on the support; and the cured product that encapsulates the semiconductor element.

[0029] The present invention also provides a method for manufacturing a semiconductor device, which includes the steps of: supplying the epoxy resin composition onto a laminate including a support and a semiconductor element mounted on the support; filling a gap between the support and the semiconductor element with the epoxy resin composition to form a molded body; and curing the molded body to encapsulate the semiconductor element, thereby obtaining an encapsulated body.

[0030] The method for manufacturing a semiconductor device preferably further includes the step of polishing the sealing body.

[0031] The epoxy resin composition of the present invention is less prone to warping, and therefore semiconductor devices comprising a cured product of the epoxy resin composition exhibit high reliability.

[0032] 1A to 1C are diagrams illustrating one embodiment of a method for manufacturing a semiconductor device according to the present invention. 2A to 2C are diagrams illustrating another embodiment of a method for manufacturing a semiconductor device according to the present invention. 3A to 3C are diagrams illustrating microvoids in Example 1. 4A to 4C are diagrams illustrating microvoids in Comparative Example 1.

[0033] <Epoxy Resin Composition> The epoxy resin composition of the present invention comprises an epoxy resin (A), a compound (B) containing a carbonate group (—O—(C═O)—O—) and / or an ether group (—O—) in the molecule, an inorganic filler (C), and a curing accelerator (D). Hereinafter, the compound (B) containing a carbonate group and / or an ether group in the molecule may be referred to as “compound (B).”

[0034] Epoxy Resin (A) The epoxy resin composition contains the epoxy resin (A), which allows it to form a cured product with high electrical insulation. The number of epoxy groups in the epoxy resin (A) is not particularly limited as long as it is one or more, but it is preferably two or more (i.e., a polyfunctional epoxy resin). The epoxy resin (A) can be used alone or in combination of two or more.

[0035] The epoxy resin (A) may be liquid or solid at room temperature (25° C.), but is preferably liquid from the viewpoint of the viscosity of the epoxy resin composition. A solid epoxy resin can also be preferably used when it is used in combination with a liquid epoxy resin to form a liquid mixture.

[0036] Examples of the epoxy resin (A) include bisphenol type epoxy resins such as bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, and bisphenol AF type epoxy resins, bixylenol type epoxy resins, cyclohexane type epoxy resins, dicyclopentadiene type epoxy resins, trisphenolmethane type epoxy resins, naphthol novolac type epoxy resins, phenol novolac type epoxy resins, tert-butyl-catechol type epoxy resins, naphthalene type epoxy resins, naphthol type epoxy resins, and anthracene type epoxy resins. resins, oxazolidone ring-containing epoxy resins, glycidylamine-type epoxy resins, glycidyl ester-type epoxy resins, cresol novolac-type epoxy resins, biphenyl-type epoxy resins, linear aliphatic epoxy resins, epoxy resins having a butadiene structure, alicyclic epoxy resins, heterocyclic epoxy resins, spiro ring-containing epoxy resins, cyclohexanedimethanol-type epoxy resins, naphthylene ether-type epoxy resins, trimethylol-type epoxy resins, tetraphenylmethane-type epoxy resins, aminophenol-type epoxy resins, and silicone-modified epoxy resins. Among these, from the viewpoint of reducing warpage, bisphenol-type epoxy resins such as bisphenol F-type epoxy resins, glycidylamine-type epoxy resins, and naphthalene-type epoxy resins are preferred, and bisphenol-type epoxy resins such as bisphenol F-type epoxy resins and glycidylamine-type epoxy resins are more preferred.

[0037] Specific examples of liquid epoxy resins include "YDF-8170" and "YDF870GS" (both bisphenol F type epoxy resins), "YDF-8125" (bisphenol A type epoxy resin), "ZX-1658" and "ZX-1658GS" (all liquid 1,4-glycidylcyclohexane) manufactured by Nippon Steel Chemical & Material Co., Ltd.; "HP-4032", "HP-4032D", and "HP-4032SS" (all naphthalene type epoxy resins) manufactured by DIC Corporation; and "jER828US" and "jER828EL" (both bisphenol A type epoxy resins) and "jER80" manufactured by Mitsubishi Chemical Corporation. 6," "jER807" (all bisphenol F type epoxy resins), "jER152" (phenol novolac type epoxy resin), "jER630," "jER630LSD" (all aminophenol type epoxy resins), "YX7400N" (aliphatic epoxy resin / polytetramethylene glycol diglycidyl ether); "ZX1059" (a mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.; "EX-721" (glycidyl ester type epoxy resin) and "EX-171" (lauryl alcohol (EO)) manufactured by Nagase ChemteX Corporation. １５ glycidyl ether); ADEKA Corporation's "ADEKA RESIN EP4005" (bisphenol A type epoxy resin containing a polypropylene glycol structure), "EP-3950L" (aminophenol type epoxy resin), and "EP3980S" (glycidylamine type epoxy resin); Asahi Kasei Corporation's "AER9000" (PO-modified bisphenol type epoxy resin), "AER4001", "AER4004", and "AER4152" (all oxazolidone ring-containing epoxy resins); The Dow Chemical Company's "DER852" and "DER858" (all oxazolidone ring-containing epoxy resins); Nippon Kayaku Co., Ltd.'s "FAE-2500" and "EPPN-501HY" (all trisphenolmethane type epoxy resins); and Daicel Corporation's "Celloxide 2021P" (alicyclic epoxy resin).

[0038] Specific examples of solid epoxy resins include "HP-4032H" (naphthalene type epoxy resin), "HP-4700", and "HP-4710" (all naphthalene type tetrafunctional epoxy resins), "N-690" (cresol novolac type epoxy resin), "N-695" (cresol novolac type epoxy resin), "HP-7200", "HP-7200L", "HP-7200HH", "HP-7200H", and "HP-7200HHH" (all dicyclopentadiene type epoxy resins), all manufactured by DIC Corporation. ene-type epoxy resins), "EXA850CRP", "EXA7311", "EXA7311-G3", "EXA7311-G4", "EXA7311-G4S", and "HP6000" (all naphthylene ether-type epoxy resins); "EPPN-502H" (trisphenolmethane-type epoxy resin), "NC-7000-L" (naphthol novolac-type epoxy resin), "NC-3000-H", "NC-3000", "NC-3000-L", and "NC-310" manufactured by Nippon Kayaku Co., Ltd. 0" (all biphenyl-type epoxy resins); "ESN475V" (naphthol-type epoxy resin) and "ESN485" (naphthol novolac-type epoxy resin) manufactured by Nippon Steel Chemical & Material Co., Ltd.; "YX4000H" and "YL6121" (both biphenyl-type epoxy resins), "YX4000HK" (bixylenol-type epoxy resin), "YL7760" (bisphenol AF-type epoxy resin), and "YX8800" (anthracene-type epoxy resin) manufactured by Mitsubishi Chemical Corporation. "PG-100" and "CG-500" manufactured by Osaka Gas Chemicals Co., Ltd.; and "YL7800" (fluorene-type epoxy resin), "jER1010" (solid bisphenol A-type epoxy resin), "jER1031S" (tetraphenylethane-type epoxy resin), "jER157S70" (bisphenol novolac-type epoxy resin), "YX4000HK" (bixylenol-type epoxy resin), and "YX8800" (anthracene-type epoxy resin) manufactured by Mitsubishi Chemical Corporation.

[0039] The epoxy equivalent of the epoxy resin (A) is not particularly limited, but is preferably, for example, 20 to 1000 g / eq, more preferably 40 to 600 g / eq, and even more preferably 50 to 400 g / eq.

[0040] The content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is preferably 1% by mass or more, more preferably 3% by mass or more, even more preferably 5% by mass or more, even more preferably 7% by mass or more, and particularly preferably 8% by mass or more. It is also preferably 30% by mass or less, more preferably 25% by mass or less, even more preferably 20% by mass or less, even more preferably 18% by mass or less, and particularly preferably 16% by mass or less. That is, the content of the epoxy resin (A) relative to the epoxy resin composition (100% by mass) is preferably 1 to 30% by mass, more preferably 3 to 25% by mass, even more preferably 5 to 20% by mass, even more preferably 7 to 18% by mass, and particularly preferably 8 to 16% by mass. Having the epoxy resin (A) content within the above range tends to produce a cured product with high electrical insulation. Furthermore, warpage tends to be reduced.

[0041] Compound (B) Compound (B) is a compound containing a carbonate group (—O—(C═O)—O—) and / or an ether group (—O—) in the molecule, and contributes to reducing warpage. Compared to known warpage-reducing materials (e.g., silicone resins, core-shell rubber particles, etc.), compound (B) is superior in that it (1) not only has a high warpage-reducing effect but also (2) the viscosity of the composition is less likely to increase. In addition, it tends to reduce the occurrence of microvoids after molding.

[0042] From the viewpoint of reducing warpage, the compound (B) preferably has at least one substituent selected from the group consisting of a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, and a (meth)acryloyl group, and more preferably has at least one substituent selected from the group consisting of a hydroxyl group and an epoxy group.

[0043] Furthermore, compound (B) may contain an ester group (-(C=O)-O- or -O-(C=O)-) or an amide group (-NH-(C=O)- or -(C=O)-NH-) in the molecule, in addition to a carbonate group (-O-(C=O)-O-) and an ether group (-O-). Compound (B) preferably has a structure in which one or more hydrocarbon groups are linked via these groups, and is a compound in which some or all of the hydrogen atoms of the hydrocarbon groups have been substituted with hydroxyl groups, carboxy groups, epoxy groups, glycidyl groups, oxetanyl groups, vinyl groups, allyl groups, or (meth)acryloyl groups. The number of carbon atoms in the hydrocarbon group is not particularly limited, but is preferably 1 to 10, more preferably 2 to 8, even more preferably 3 to 6, and particularly preferably 4 or 5. When compound (B) contains two or more hydrocarbon groups, the hydrocarbon groups may be the same or different. However, compounds corresponding to the epoxy resin (A) are excluded from the compound (B). The compound (B) may be used alone or in combination of two or more.

[0044] The compound (B) preferably contains a carbonate group, which tends to reduce the occurrence of microvoids after molding.

[0045] The compound (B) preferably has a polytetramethylene ether structure in the molecule. The polytetramethylene ether structure is represented by "-(CH ２ -CH ２ -CH ２ -CH ２ When the compound (B) has the above structure, the flexibility of the cured product of the epoxy resin composition is improved, and warpage tends to be reduced.

[0046] Examples of the compound (B) include compounds represented by the following formula (1).

[0047] In formula (1), n １ is an integer of 1 or more, preferably 1 to 120, more preferably 2 to 80, and even more preferably 3 to 60. １are the same or different and are a carbonate group (-O-(C=O)-O-), an ether group (-O-), an ester group (-(C=O)-O- or -O-(C=O)-), or an amide group (-NH-(C=O)- or -(C=O)-NH-). １ At least one of R is a carbonate group (—O—(C═O)—O—) or an ether group (—O—). １ and R ２ are the same or different and are linear or branched alkylene groups. The number of carbon atoms in the alkylene group is preferably 2 to 8, more preferably 3 to 6, even more preferably 4 or 5, and particularly preferably 4. Examples of the alkylene group include -(CH ２ ) ２ -, -(CH ２ ) ３ -, -(CH ２ ) ４ -, -(CH ２ ) ５ -, -(CH ２ ) ６ -, -C(CH ３ ) ２ -, -CH ２ -CH(CH ３ ) -, -CH ２ -CH(CH ３ )-CH ２ -, -CH ２ -C(CH ３ ) ２ -CH ２ - is mentioned. １ and Y ２ are the same or different and each represents a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

[0048] Examples of the compound (B) containing a carbonate group (—O—(C═O)—O—) in the molecule include compounds represented by the following formula (2):

[0049]

[0050] In formula (2), n １１is an integer of 1 or more, preferably 1 to 40, more preferably 2 to 20, even more preferably 2 to 10, and particularly preferably 2 to 6. ２１ is an integer of 0 or more, preferably 1 to 80, more preferably 2 to 60, and even more preferably 3 to 50. １１ and n ２１ The sum of X is an integer of 1 or more, preferably 2 to 120, more preferably 3 to 80, and even more preferably 4 to 60. ２ are the same or different and are an ether group (-O-), an ester group (-(C=O)-O- or -O-(C=O)-), or an amide group (-NH-(C=O)- or -(C=O)-NH-). １１ , R ２１ , and R ３１ are the same or different and are linear or branched alkylene groups. The number of carbon atoms in the alkylene group is preferably 2 to 8, more preferably 3 to 6, even more preferably 4 or 5, and particularly preferably 4. Examples of the alkylene group include -(CH ２ ) ２ -, -(CH ２ ) ３ -, -(CH ２ ) ４ -, -(CH ２ ) ５ -, -(CH ２ ) ６ -, -C(CH ３ ) ２ -, -CH ２ -CH(CH ３ ) -, -CH ２ -CH(CH ３ )-CH ２ -, -CH ２ -C(CH ３ ) ２ -CH ２ - is mentioned. １１ and Y ２１ are the same or different and each represents a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

[0051] In the compound represented by formula (2), X ２Further preferably has an ether group (—O—), and is particularly preferably a compound represented by the following formula (3) from the viewpoint of reducing warpage and the occurrence of microvoids.

[0052]

[0053] In formula (3), n １２ is an integer of 1 or more, preferably 1 to 20, more preferably 1 to 10, and even more preferably 2 to 6. ２２ is an integer of 0 or more, preferably 1 to 80, more preferably 2 to 60, and even more preferably 3 to 50. １２ , R ２２ , and R ３２ are the same or different and are linear or branched alkylene groups. The number of carbon atoms in the alkylene group is preferably 2 to 8, more preferably 3 to 6, even more preferably 4 or 5, and particularly preferably 4. Examples of the alkylene group include -(CH ２ ) ２ -, -(CH ２ ) ３ -, -(CH ２ ) ４ -, -(CH ２ ) ５ -, -(CH ２ ) ６ -, -C(CH ３ ) ２ -, -CH ２ -CH(CH ３ ) -, -CH ２ -CH(CH ３ )-CH ２ -, -CH ２ -C(CH ３ ) ２ -CH ２ - is mentioned. １２ and Y ２２ are the same or different and each represents a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

[0054] The compound (B) containing an ether group (—O—) in the molecule is not particularly limited, but examples thereof include compounds represented by the following formula (4):

[0055]

[0056] In formula (4), n １３ is an integer of 1 or more, preferably 1 to 80, more preferably 2 to 60, and even more preferably 3 to 50. ２３ is an integer of 0 or more, preferably 0 to 20, more preferably 0 to 10, and even more preferably 0 to 8. ３ are the same or different and are an ester group (-(C=O)-O- or -O-(C=O)-) or an amide group (-NH-(C=O)- or -(C=O)-NH-). １３ , R ２３ , and R ３３ are the same or different and are linear or branched alkylene groups. The number of carbon atoms in the alkylene group is preferably 2 to 8, more preferably 3 to 6, even more preferably 4 or 5, and particularly preferably 4. Examples of the alkylene group include -(CH ２ ) ２ -, -(CH ２ ) ３ -, -(CH ２ ) ４ -, -(CH ２ ) ５ -, -(CH ２ ) ６ -, -C(CH ３ ) ２ -, -CH ２ -CH(CH ３ ) -, -CH ２ -CH(CH ３ )-CH ２ -, -CH ２ -C(CH ３ ) ２ -CH ２ - is mentioned. １３ and Y ２３ are the same or different and each represents a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

[0057] The compound represented by formula (4) is particularly preferably a compound represented by the following formula (5) from the viewpoint of reducing warpage.

[0058]

[0059] In formula (5), n １４ is an integer of 1 or more, preferably 3 to 80, more preferably 4 to 60, and even more preferably 5 to 40. １４ and R ２４ are the same or different and are linear or branched alkylene groups. The number of carbon atoms in the alkylene group is preferably 2 to 8, more preferably 3 to 6, even more preferably 4 or 5, and particularly preferably 4. Examples of the alkylene group include -(CH ２ ) ２ -, -(CH ２ ) ３ -, -(CH ２ ) ４ -, -(CH ２ ) ５ -, -(CH ２ ) ６ -, -C(CH ３ ) ２ -, -CH ２ -CH(CH ３ ) -, -CH ２ -CH(CH ３ )-CH ２ -, -CH ２ -C(CH ３ ) ２ -CH ２ - is mentioned. １４ and Y ２４ are the same or different and each represents a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

[0060] The molecular weight of compound (B) (number average molecular weight when there is a molecular weight distribution) is, for example, 200 to 6000, preferably 500 to 5700, more preferably 1000 to 5400, and particularly preferably 1400 to 5200. The weight average molecular weight of compound (B) is, for example, 500 to 16000, preferably 1000 to 14000, more preferably 2000 to 13000, and particularly preferably 3000 to 12000. The number average molecular weight and weight average molecular weight of compound (B) are values ​​measured, for example, by polystyrene conversion in GPC analysis.

[0061] Compound (B) that can be used includes, for example, compounds that are commercially available as "polycarbonate diols" or "polyether diols" and correspond to compound (B). Examples of the polycarbonate diol include the Duranol series manufactured by Asahi Kasei Corporation, the PEPCD series (PEPCD NT1002, PEPCD NT2002, PEPCD NT2006, etc.) and the BENEBiOL series manufactured by Mitsubishi Chemical Corporation, the ETERNACOLL series manufactured by Ube Industries, Ltd. (PH-300, which is a polycarbonate diol produced from 1,6-hexanediol, 1,5-pentanediol, and dimethyl carbonate, UH-100 and UH-300, which are polycarbonate diols produced from 1,6-hexanediol and dimethyl carbonate, UHC50-100 and UHC50-300, which are polycarbonate diols produced from 1,6-hexanediol, caprolactone, and dimethyl carbonate), and Kuraray Polyol manufactured by Kuraray Co., Ltd. Other examples include polyether diols such as EXCENOL manufactured by AGC Inc., POLYLITE series manufactured by DIC Corporation, and ADEKA POLYETHER manufactured by ADEKA Corporation.

[0062] The content of compound (B) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, even more preferably 0.3% by mass or more, even more preferably 0.4% by mass or more, and particularly preferably 0.5% by mass or more. It is also preferably 30% by mass or less, more preferably 15% by mass or less, even more preferably 12% by mass or less, even more preferably 10% by mass or less, and particularly preferably 8% by mass or less. That is, the content of compound (B) relative to the epoxy resin composition (100% by mass) is preferably 0.1 to 30% by mass, more preferably 0.2 to 15% by mass, even more preferably 0.3 to 12% by mass, even more preferably 0.4 to 10% by mass, and particularly preferably 0.5 to 8% by mass.

[0063] The content of compound (B) relative to the epoxy resin (A) (100% by mass) contained in the epoxy resin composition is not particularly limited, but is preferably 0.5% by mass or more, more preferably 1% by mass or more, even more preferably 2% by mass or more, and particularly preferably 3% by mass or more. It is also preferably 100% by mass or less, more preferably 80% by mass or less, even more preferably 70% by mass or less, and particularly preferably 60% by mass or less. That is, the content of compound (B) relative to the epoxy resin (A) (100% by mass) is preferably 0.5 to 100% by mass, more preferably 1 to 80% by mass or less, even more preferably 2 to 70% by mass, and particularly preferably 3 to 60% by mass. When the content of compound (B) is within the above range, warping of the molded wafer tends to be less likely to occur.

[0064] When the epoxy resin composition contains a curing agent (E), the content of compound (B) relative to the epoxy resin (A) (100% by mass) contained in the epoxy resin composition is not particularly limited, but is preferably 1% by mass or more, more preferably 2% by mass or more, even more preferably 3% by mass or more, and particularly preferably 4% by mass or more. It is also preferably 30% by mass or less, more preferably 25% by mass or less, and even more preferably 20% by mass or less. That is, the content of compound (B) relative to the epoxy resin (A) (100% by mass) is preferably 1 to 30% by mass, more preferably 2 to 25% by mass, even more preferably 3 to 20% by mass, and particularly preferably 4 to 20% by mass. When the content of compound (B) is within the above range, warping of the molded wafer tends to be less likely to occur.

[0065] Inorganic Filler (C) The inorganic filler (C) is not particularly limited, but is preferably (1) one having the property of suppressing volumetric shrinkage (cure shrinkage) resulting from the curing reaction of the epoxy resin composition, (2) one having the property of suppressing volumetric change (thermal shrinkage) due to heating of the cured product, i.e., one having the effect of lowering the linear expansion coefficient of the cured product when added, or (3) one having both of these properties.

[0066] Examples of inorganic fillers (C) include silica (silicon dioxide), silicon carbide, silicon nitride, alumina (aluminum oxide), aluminum nitride, aluminum hydroxide, aluminum silicate, magnesium silicate, calcium silicate, calcium carbonate, barium sulfate, barium carbonate, titanium oxide, lime sulfate, potassium titanate, magnesium carbonate, zinc oxide, boron nitride, zirconia (zirconium oxide), and inorganic particles having their surfaces treated. Among these, silica is preferred from the viewpoint of increasing the loading amount. Furthermore, alumina is preferred from the viewpoint of high thermal conductivity. The inorganic filler (C) can be used alone or in combination of two or more.

[0067] In order to maintain the viscosity of the epoxy resin composition within an appropriate range, the inorganic filler (C) is preferably surface-treated with a coupling agent having a functional group such as an epoxy group, a (meth)acryloyl group, or an amino group (particularly a phenylamino group). Examples of the coupling agent include silane coupling agents such as 3-glycidoxypropyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, and N-phenyl-3-aminopropyltrimethoxysilane. For the surface treatment of the inorganic filler (C), one of the above coupling agents can be used alone, or two or more can be used in combination.

[0068] The shape of the inorganic filler (C) is not particularly limited, and examples thereof include spherical (e.g., spherical, nearly spherical), polyhedral, rod-like (e.g., cylindrical, prismatic), plate-like, flaky, and irregular shapes. Among these, spherical shapes are preferred from the viewpoint of achieving a high loading amount.

[0069] The average particle size of the inorganic filler (C) is not particularly limited, but is preferably 1 nm to 15 μm, more preferably 0.1 to 10 μm, even more preferably 0.2 to 5 μm, even more preferably 0.3 to 3 μm, and even more preferably 0.4 to 2 μm. When the average particle size of the inorganic filler (C) is within the above range, the particle size is not too large, and therefore the epoxy resin composition tends to have high filling properties even in narrow gaps. In particular, when the epoxy resin composition is used as a liquid compression molding material, the gap width may be as large as approximately 40 μm. Therefore, the average particle size of the inorganic filler (C) is preferably 1 nm to 5 μm, more preferably 0.1 to 3 μm, and even more preferably 0.2 to 2 μm. Two or more fillers with different average particle sizes may be used in combination to adjust the viscosity of the epoxy resin composition. In this specification, the method for measuring the average particle size of the inorganic filler (C) is not particularly limited, but for example, it can be measured using a laser diffraction / scattering particle size distribution measuring device (product name: LS 13 320, manufactured by Beckman Coulter, Inc.).

[0070] When the epoxy resin composition contains silica as the inorganic filler (C), it is preferable to use a first silica having an average particle size of 10 nm or more but less than 100 nm in combination with a second silica having an average particle size of 0.1 to 5.0 μm. The average particle size of the first silica is preferably 20 to 80 nm, more preferably 30 to 60 nm. The average particle size of the second silica is preferably 0.2 to 3.0 μm, more preferably 0.3 to 2.0 μm. When the epoxy resin composition contains alumina as the inorganic filler (C), the average particle size thereof is preferably 0.1 to 5.0 μm, more preferably 0.2 to 3.0 μm, and even more preferably 0.3 to 2.0 μm.

[0071] The content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is preferably 50% by mass or more, more preferably 60% by mass or more, even more preferably 70% by mass or more, even more preferably 75% by mass or more, and particularly preferably 80% by mass or more. It is also preferably 96% by mass or less, more preferably 93% by mass or less, even more preferably 90% by mass or less, and particularly preferably 88% by mass or less. That is, the content of the inorganic filler (C) relative to the epoxy resin composition (100% by mass) is preferably 50 to 96% by mass, more preferably 60 to 93% by mass, even more preferably 70 to 90% by mass, particularly preferably 75 to 88% by mass, and particularly preferably 80 to 88% by mass. Having the inorganic filler (C) content within the above ranges improves gap filling and workability of the epoxy resin composition and also tends to reduce warpage of the wafer after molding.

[0072] The content of the inorganic filler (C) relative to the epoxy resin (A) (100% by mass) contained in the epoxy resin composition is not particularly limited, but is preferably, for example, 200% by mass or more, more preferably 400% by mass or more, and even more preferably 500% by mass or more. It is also preferably, for example, 2500% by mass or less, more preferably 2000% by mass or less, even more preferably 1500% by mass or less, and particularly preferably 1000% by mass or less. That is, the content of the inorganic filler (C) relative to the epoxy resin (A) (100% by mass) is, for example, preferably 200 to 2500% by mass, more preferably 400 to 2000% by mass, even more preferably 500 to 1500% by mass, and particularly preferably 500 to 1000% by mass. Having the inorganic filler (C) content within the above range improves the gap-filling ability and workability of the epoxy resin composition, and also tends to reduce warpage of the wafer after molding.

[0073] Curing accelerator (D) The curing accelerator (D) has the property of accelerating the curing of the epoxy resin. The curing accelerator is not particularly limited, but examples thereof include imidazole-based curing accelerators, tertiary amine-based curing accelerators, and phosphorus-based curing accelerators. Among these, imidazole-based curing accelerators are preferred from the viewpoint of reliability. The curing accelerator (D) can be used alone or in combination of two or more.

[0074] Examples of the imidazole curing accelerator include imidazole compounds such as 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, and 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine. Commercially available products include 2-ethyl-4-methylimidazole (product name "2E4MZ"), 2-phenyl-4-methylimidazole (product name "2P4MZ"), 2-phenyl-4-methyl-5-hydroxymethylimidazole (product name "2P4MHZ-PW"), 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine (product name "2MZA-PW"), "2MZ-OK", "2MA-OK", and "2PHZ", all manufactured by Shikoku Chemical Industry Co., Ltd. In addition, encapsulated imidazole, also known as microencapsulated imidazole or epoxy adduct imidazole, may also be used. Commercially available products include "HX3941HP", "HXA3942HP", "HXA3922HP", "HXA3792", "HX3748", "HX3721", "HX3722", "HX3088", "HX3741", "HX3742", and "HX3613" (all manufactured by Asahi Kasei Corporation), "PN-23J", "PN-40J", and "PN-50" (manufactured by Ajinomoto Fine-Techno Co., Ltd.), and "FXR-1121" (manufactured by T&K TOKA Corporation).

[0075] Examples of tertiary amine curing accelerators include benzyldimethylamine, 2-(dimethylaminomethyl)phenol, 2,4,6-tris(dimethylaminomethyl)phenol, tetramethylguanidine, triethanolamine, N,N'-dimethylpiperazine, triethylenediamine, 1,8-diazabicyclo[5.4.0]undecene, 1,5-diazabicyclo[4.3.0]nonene, and salts thereof. Examples of the salts include the formate, octylate, p-toluenesulfonate, o-phthalate, phenol salt, and phenol novolac resin salt of 1,8-diazabicyclo[5.4.0]undecene, and the formate, octylate, p-toluenesulfonate, o-phthalate, phenol salt, and phenol novolac resin salt of 1,5-diazabicyclo[4.3.0]nonene.

[0076] Examples of phosphorus-based curing accelerators include phosphorus compounds such as triphenylphosphine, tri-p-tolylphosphine, tetraphenylphosphonium tetraphenylborate, triphenylphosphine triphenylborane, and 1,2-bis-(diphenylphosphino)ethane.

[0077] The content of the curing accelerator (D) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is preferably 0.01% by mass or more, more preferably 0.02% by mass or more, even more preferably 0.04% by mass or more, even more preferably 0.06% by mass or more, and particularly preferably 0.08% by mass or more. Furthermore, the content is preferably 5% by mass or less, more preferably 3% by mass or less, even more preferably 2% by mass or less, and particularly preferably 1% by mass or less. That is, the content of the curing accelerator (D) relative to the epoxy resin composition (100% by mass) is preferably 0.01 to 5% by mass, more preferably 0.02 to 3% by mass, even more preferably 0.04 to 2% by mass, even more preferably 0.06 to 1% by mass, and particularly preferably 0.08 to 1% by mass. Having the content of the curing accelerator (D) within the above range tends to improve curability and result in good molding. Furthermore, warping and microvoids tend to be less likely to occur in the molded wafer.

[0078] The content of the curing accelerator (D) relative to the epoxy resin (A) (100% by mass) contained in the epoxy resin composition is not particularly limited, but is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, even more preferably 0.4% by mass or more, even more preferably 0.6% by mass or more, and particularly preferably 0.8% by mass or more. Furthermore, it is preferably 30% by mass or less, more preferably 20% by mass or less, even more preferably 15% by mass or less, and particularly preferably 10% by mass or less. That is, the content of the curing accelerator (D) relative to the epoxy resin (A) (100% by mass) is preferably 0.1 to 30% by mass, more preferably 0.2 to 20% by mass, even more preferably 0.4 to 15% by mass, even more preferably 0.6 to 10% by mass, and particularly preferably 0.8 to 10% by mass. Having the curing accelerator (D) content within the above range tends to improve curability and result in good molding. Furthermore, warping and microvoids tend to be less likely to occur in the molded wafer.

[0079] Curing Agent (E) The epoxy resin composition may contain a curing agent (E). When the epoxy resin composition contains the curing agent (E), warpage is further reduced and the viscosity of the epoxy resin composition tends to be reduced. Furthermore, the glass transition temperature Tg of the cured product tends to be increased, and heat resistance tends to be improved. The curing agent (E) is not particularly limited, but examples include amine-based curing agents, acid anhydride-based curing agents, and phenol-based curing agents, and among these, acid anhydride-based curing agents or phenol-based curing agents are preferred. The curing agent (E) can be used alone or in combination of two or more types.

[0080] Examples of the amine-based curing agent include aromatic amines such as 4,4'-diamino-3,3'-diethyldiphenylmethane, diethyltoluenediamine, dimethylthiotoluenediamine, methylenedianiline, m-phenylenediamine, 4,4'-diaminodiphenylsulfone, and 3,3'-diaminodiphenylsulfone. Examples of the acid anhydride-based curing agent include alkylated tetrahydrophthalic anhydrides such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, phthalic anhydride, dodecenyl succinic anhydride, and methylnadic anhydride. Examples of the phenol-based curing agent include phenol novolac resin, cresol novolac resin, naphthol-modified phenolic resin, dicyclopentadiene-modified phenolic resin, and p-xylene-modified phenolic resin.

[0081] The equivalent weight (molecular weight per functional group) of the curing agent (E) is not particularly limited, but is, for example, preferably 10 to 600 g / eq, more preferably 30 to 300 g / eq, even more preferably 50 to 200 g / eq, and still more preferably 100 to 150 g / eq.

[0082] The content of the curing agent (E) relative to the epoxy resin composition (100% by mass) is not particularly limited, but is preferably 0.01% by mass or more, more preferably 0.02% by mass or more, even more preferably 0.04% by mass or more, even more preferably 0.06% by mass or more, and particularly preferably 0.08% by mass or more. It is also preferably 5% by mass or less, more preferably 3% by mass or less, even more preferably 2% by mass or less, and particularly preferably 1% by mass or less. That is, the content of the curing agent (E) relative to the epoxy resin composition (100% by mass) is preferably 0.01 to 5% by mass, more preferably 0.02 to 3% by mass, even more preferably 0.04 to 2% by mass, even more preferably 0.06 to 1% by mass, and particularly preferably 0.08 to 1% by mass. When the content of the curing agent (E) is within the above range, the viscosity of the epoxy resin composition tends to be reduced. Furthermore, the heat resistance of the cured product tends to be improved.

[0083] The content of the curing agent (E) relative to the epoxy resin (A) (100% by mass) contained in the epoxy resin composition is not particularly limited, but is preferably 0.2% by mass or more, more preferably 0.4% by mass or more, even more preferably 0.8% by mass or more, even more preferably 1.5% by mass or more, and particularly preferably 2.0% by mass or more. Furthermore, it is preferably 20% by mass or less, more preferably 10% by mass or less, even more preferably 8% by mass or less, and particularly preferably 6% by mass or less. That is, the content of the curing agent (E) relative to the epoxy resin (A) (100% by mass) is preferably 0.2 to 20% by mass, more preferably 0.4 to 10% by mass, even more preferably 0.8 to 8% by mass, even more preferably 1.5 to 6% by mass, and particularly preferably 2.0 to 6% by mass. When the content of the curing agent (E) is within the above range, the viscosity of the epoxy resin composition tends to be reduced. Furthermore, the heat resistance of the cured product tends to be improved.

[0084] The content of the curing agent (E) relative to the epoxy resin (A) is not particularly limited, but for example, an equivalent ratio of 0.5 to 1.5 is preferred, and an equivalent ratio of 0.7 to 1.3 is more preferred.

[0085] Other Components (F) The epoxy resin composition may contain components other than the epoxy resin (A), the compound (B), the inorganic filler (C), the curing accelerator (D), and the curing agent (E) (hereinafter referred to as "other components (F)"). Examples of other components (F) include curable compounds other than the epoxy resin (A), thermoplastic resins such as polyethylene resins, polyester resins, polyurethane resins, and polyamide resins, coupling agents, elastomers, surfactants, ion trapping agents, leveling agents, antioxidants, antifoaming agents, flame retardants, colorants such as carbon black, reactive diluents, and solvents. The other components (F) may be used alone or in combination of two or more.

[0086] The content of the other component (F) relative to the epoxy resin composition (100% by mass) is not particularly limited as long as it does not impair the effects of the present invention, but is, for example, preferably 10% by mass or less, more preferably 5% by mass or less, even more preferably 3% by mass or less, and particularly preferably 1% by mass or less. Also, for example, it is preferably 0.01% by mass or more, more preferably 0.1% by mass or more.

[0087] The content of the solvent relative to the epoxy resin composition (100% by mass) is, for example, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.1% by mass or less, or 0.01% by mass or less. Alternatively, it is, for example, 0.001% by mass or more. The epoxy resin composition may contain a solvent, but it is desirable that the composition is substantially free of solvent, since unintended voids may be generated due to evaporation of the solvent during curing.

[0088] (Physical Properties and Production Method of Epoxy Resin Composition) The viscosity of the epoxy resin composition at 25°C is not particularly limited, but is, for example, preferably 1 to 2000 Pa·s, more preferably 5 to 1500 Pa·s, even more preferably 10 to 1000 Pa·s, and particularly preferably 50 to 500 Pa·s. When the viscosity is within the above range, the gap filling ability and workability of the epoxy resin composition are improved, and warpage of the wafer after molding tends to be reduced. The viscosity can be measured, for example, by the method described in the Examples below.

[0089] The epoxy resin composition can be prepared by a known, conventional method. For example, the epoxy resin (A), compound (B), inorganic filler (C), and, optionally, at least one selected from the group consisting of curing accelerator (D), curing agent (E), and other component (F), can be simultaneously or separately introduced into an appropriate mixer and, if necessary, heated to melt and stir / mix. If the epoxy resin (A) is solid, it is preferably liquefied or fluidized by heating before mixing. If it is difficult to uniformly disperse the inorganic filler (C) in the epoxy resin composition, the epoxy resin (A) and inorganic filler (C) can be heated and mixed to uniformly disperse the inorganic filler (C) in the epoxy resin (A), followed by cooling as necessary, and then mixing with components such as the curing agent (E), to prepare the epoxy resin composition.

[0090] The mixer is not particularly limited, and examples thereof include a roll mill equipped with a stirrer and a heater, a Raikai mixer, a Henschel mixer, a tumbler, a planetary mixer, etc. The mixing ratio of each component is appropriately set depending on the content of each component in the epoxy resin composition.

[0091] The epoxy resin composition can be preferably used as a material for encapsulating materials mounted on a support, such as a semiconductor element, wiring, and solder (solder bumps) in a semiconductor device (an epoxy resin composition for semiconductor encapsulation). By using the epoxy resin composition as an epoxy resin composition for semiconductor encapsulation, a highly reliable encapsulated body can be produced. The epoxy resin composition can also be preferably used as a material for encapsulating a semiconductor element or the like mounted on a support in a flip-chip semiconductor device (an epoxy resin composition for flip-chip semiconductor encapsulation). Specifically, by filling the gap between the semiconductor element or the like and the support and curing the epoxy resin composition, the bumps present in the gap can be encapsulated while the semiconductor element and the support are fixed together as an encapsulated body, thereby improving thermal cycle resistance.

[0092] The epoxy resin composition for semiconductor encapsulation may be liquid or solid at room temperature (25°C). The epoxy resin composition is used, for example, as an underfill, such as a capillary underfill, a liquid mold underfill, a secondary underfill, or a pre-applied underfill; a grab-top material; or a liquid compression molding material. Among these, the epoxy resin composition is preferably used as a liquid compression molding material because it fully exhibits the characteristic of reducing warpage in the wafer after molding. The epoxy resin composition is also preferred because it has high filling ability even in narrow gaps (e.g., gap widths of 40 μm or less, preferably 30 μm or less, more preferably 20 μm or less, even more preferably 10 μm or less, and particularly preferably 5 μm or less). In other words, the epoxy resin composition is preferably used as a liquid compression molding material for narrow gaps. The epoxy resin composition is not limited to the use as the epoxy resin composition for semiconductor encapsulation described above. It can also be used, for example, as an adhesive for fixing, joining, or protecting components constituting electronic components. In this specification, the liquid compression molding material may be a compression molding material that is supplied to a material such as a semiconductor element and a support, filled into the gap between the material and the support, and cured to seal the gap between the material mounted on the support and the material. Alternatively, the liquid compression molding material may be a compression molding material (for overmolding or grab top applications) that is not intended to fill the gap but is intended to seal the outer periphery of a material such as a semiconductor element.

[0093] <Cured Product> A cured product is formed by curing the epoxy resin composition. The curing method is not particularly limited, but can be carried out, for example, by subjecting the epoxy resin composition to a heat treatment. The temperature for the heat treatment is not particularly limited, but is preferably, for example, 60 to 200°C, and more preferably 80 to 180°C. The time for the heat treatment is not particularly limited, but is, for example, preferably 0.1 to 5 hours, and more preferably 0.5 to 3 hours.

[0094] The glass transition temperature Tg of the cured product obtained by curing the epoxy resin composition at 150°C for 60 minutes is not particularly limited, but is preferably 100°C or higher, more preferably 105°C or higher. It is also preferably 200°C or lower, more preferably 180°C or lower. That is, the glass transition temperature Tg of the cured product is preferably 100 to 200°C, more preferably 105 to 180°C. Having a glass transition temperature within the above range tends to provide high heat resistance in that deformation at high temperatures is unlikely to occur, and the resulting cured product tends to have excellent adhesive reliability. The glass transition temperature (Tg) can be measured, for example, by the method described in the Examples below. Specifically, the glass transition temperature is measured by DMA (dynamic mechanical analysis).

[0095] A cured product obtained by curing the epoxy resin composition under the following condition (1) preferably satisfies the following condition (2): (1) Mold temperature: 120 to 150°C, mold time: 300 to 900 seconds, curing temperature: 150°C, curing time: 60 minutes, (2) When a cross section of the cured product is observed under a scanning electron microscope (magnification: 20,000 times) in an area of ​​4.0 x 5.6 μm, there is one or less void with a circle-equivalent diameter of 0.05 μm or more present in the area.

[0096] The number of voids according to the above (2) is preferably 0. The number of voids can be measured, for example, by the method described in the Examples below.

[0097] <Semiconductor Device and Manufacturing Method Thereof> The semiconductor device of the present invention comprises a support, a semiconductor element mounted on the support, and a cured product of the epoxy resin composition that encapsulates the semiconductor element. The semiconductor device is preferably a flip-chip type semiconductor device. A flip-chip type semiconductor device has a structure in which electrodes on the support are connected to the semiconductor element via bump electrodes. In addition, in the semiconductor device, the gap between the semiconductor element and the support is encapsulated with a cured product (encapsulant) of the epoxy resin composition. The width of the gap is not particularly limited, but is, for example, 40 μm or less, preferably 30 μm or less, more preferably 20 μm or less, even more preferably 10 μm or less, and particularly preferably 5 μm or less.

[0098] The method for manufacturing a semiconductor device of the present invention is characterized by comprising: a step of supplying the epoxy resin composition onto a laminate including a support and a semiconductor element mounted on the support (hereinafter referred to as the "composition supplying step"); and a step of filling the gap between the support and the semiconductor element with the epoxy resin composition to form a molded body, curing the molded body to encapsulate the semiconductor element, and obtaining an encapsulated body (hereinafter referred to as the "molding and encapsulating step").

[0099] The method for manufacturing a semiconductor device of the present invention may further include a step of polishing the sealing body (hereinafter referred to as a "grinding step"). Also, it may include at least one step selected from the group consisting of a stack preparation step and a singulation step, which will be described later.

[0100] (Laminate preparation process) The laminate preparation process is a process of mounting a semiconductor element on a support to prepare a laminate including a support and a semiconductor element mounted on the support. In the laminate, the support and the semiconductor element may be connected via solder, or may be connected using an adhesive film or adhesive sheet such as a die attach film (DAF). The support is not particularly limited, but examples thereof include silicon wafers, silicon carbide wafers, sapphire wafers, compound semiconductor wafers (gallium phosphide, gallium arsenide, indium phosphide, gallium nitride), glass epoxy substrates, organic substrates (FR4 substrates), etc. The shape of the support in a planar view is not particularly limited, but is, for example, circular or rectangular.

[0101] (Composition Supplying Step) The composition supplying step is a step of supplying the epoxy resin composition onto a laminate including a support and a semiconductor element mounted on the support.

[0102] This step may include a step of attaching a mold to the laminate, which is used to form a molded article in the molding and sealing step. That is, the composition supplying step may be a step of supplying an epoxy resin composition onto a laminate including a support and a semiconductor element mounted on the support, and then attaching a mold to the laminate.

[0103] This step may also be a step of supplying an epoxy resin composition to a mold used to form a molded article in the molding and sealing step, and then mounting a laminate comprising a support and a semiconductor element mounted on the support on the mold. By performing such a step, the epoxy resin composition can be supplied onto the laminate comprising a support and a semiconductor element mounted on the support.

[0104] (Molding and Encapsulating Step) The molding and encapsulating step is a step of filling the gap between the support and the semiconductor element with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor element, thereby obtaining an encapsulated body. This step may include two steps: a step of filling the gap between the support and the semiconductor element with the epoxy resin composition to form a molded body (molding step), and a step of curing the molded body obtained by the molding step to encapsulate the semiconductor element, thereby obtaining an encapsulated body (encapsulating step). The width of the gap is not particularly limited, but is, for example, 40 μm or less, preferably 30 μm or less, more preferably 20 μm or less, even more preferably 10 μm or less, and particularly preferably 5 μm or less.

[0105] The method for forming the molded body is not particularly limited, but examples include a method in which a mold attached to a laminate is pressed toward the laminate (support), and if necessary, the inside of the mold is depressurized to fill the gap between the support and the semiconductor element with the epoxy resin composition, thereby forming a compression molded body containing the laminate and the epoxy resin composition.In this step, instead of pressing the mold toward the laminate (support), the laminate (support) may be pressed toward the mold, or the mold and the laminate (support) may be sandwiched between each other.

[0106] As a method for forming the molded article, for example, an epoxy resin composition, which has been heated to a low viscosity as necessary, is decompressed using a molding device, and a laminate is sealed with the epoxy resin composition.

[0107] When the molded body is cured to encapsulate the semiconductor element, the epoxy resin composition may be cured by heating. The curing temperature is not particularly limited, but is preferably, for example, 110 to 200°C, and more preferably 120 to 150°C. The curing time is not particularly limited, but is, for example, preferably 30 minutes to 7 hours, more preferably 1 to 6 hours, even more preferably 1 to 4 hours, and particularly preferably 1 to 2 hours.

[0108] (Grinding Process) The grinding process is a process of polishing the encapsulated body obtained by the molding and encapsulating process, and more specifically, is a process of grinding the surface of the encapsulated body on the semiconductor element side in order to flatten and thin the encapsulated body, and to expose a part of the semiconductor element as needed. The grinding method is not particularly limited, and commercially available grinding wheels and grinding devices can be used.

[0109] (Singulation Process) The singulation process is a process for singulating the sealed body obtained in the molding and sealing process or the sealed body ground in the grinding process. The singulation process may be a process for singulating the sealed body after removing it from the mold. In the singulation process, gaps between the plurality of semiconductor elements mounted on the support and sealed with the cured product of the epoxy resin composition are cut using a means such as a dicing blade or a laser to obtain a semiconductor device. The method of singulation is not particularly limited, and a commercially available singulation device can be used.

[0110] Hereinafter, an embodiment of a method for manufacturing a semiconductor device will be described with reference to FIGS. 1 and 2, but the present invention is not limited to this.

[0111] FIG. 1 shows one embodiment of the semiconductor device manufacturing method of the present invention. This embodiment will be described below with reference to FIG. A semiconductor element 1 having solder bumps 2 on one side is mounted on a support 3, and a laminate 4 containing the semiconductor element 1, solder bumps 2, and support 3 in this order is prepared (laminate preparation step (a)). An epoxy resin composition 5 is supplied onto the semiconductor element 1 of the laminate 4 using a syringe 6, and then a mold 7 is attached (composition supply steps (b) and (c)). In this step, a release film may be provided on the surface of the mold 7 facing the laminate 4. The release film is positioned to prevent contact between the mold 7 and the epoxy resin composition 5 and also to facilitate removal of the encapsulant 9 from the mold 7 in step (f) described below. Note that the release film is not shown. The attached mold 7 is then pressed toward the support 3, and the pressure inside the mold 7 is reduced as necessary to form a compression-molded product 8 containing the laminate 4 and the epoxy resin composition 5 (molding step (d)). In this step, instead of pressing the mold 7 toward the support 3, the support 3 may be pressed toward the mold 7, or the mold 7 and the support 3 may be narrowed relative to each other. In this step, the epoxy resin composition 5 is filled into the gap between the support 3 and the semiconductor element 1 to form a compression-molded body 8. The compression-molded body 8 is thermally cured to seal the semiconductor element 1, thereby forming a sealed body 9 (sealing step (e)). After removing the mold 7, the sealed body 9 including the semiconductor element 1 is divided into individual pieces (singulation steps (f) and (g)).

[0112] FIG. 2 shows another embodiment of the semiconductor device manufacturing method of the present invention. This embodiment will be described below with reference to FIG. A semiconductor element 11 having solder bumps 12 on one side is mounted on a support 13, and a laminate 14 including the semiconductor element 11, solder bumps 12, and support 13 in this order is prepared (laminate preparation step (a)). An epoxy resin composition 15 is supplied to a mold 17 using a syringe 16, and the laminate 14 is then attached to the mold (composition supply steps (b) and (c)). In this step, a release film may be provided on the surface of the mold 17 onto which the epoxy resin composition 15 is supplied. That is, in this step, (1) the epoxy resin composition 15 may be supplied to the surface of the mold 17 that is provided with the release film, or (2) the epoxy resin composition 15 may be supplied onto the release film, and the release film may then be placed on the mold 17. The release film is arranged to prevent contact between the mold 17 and the epoxy resin composition 15, and also to facilitate removal of the encapsulated body 19 from the mold 17 in the step (f) described below. The release film is not shown. Next, the pressure inside the mold 17 is reduced, and a compression-molded body 18 containing the laminate 14 and the epoxy resin composition 15 is formed (molding step (d)). In this step, the epoxy resin composition 15 fills the gap between the support 13 and the semiconductor element 11, forming the compression-molded body 18. The compression-molded body 18 is thermally cured to encapsulate the semiconductor element 11, thereby forming the encapsulated body 19 (encapsulating step (e)). After the mold 17 is removed, the encapsulated body 19 containing the semiconductor element is singulated (singulation steps (f) and (g)).

[0113] The present invention will be described in more detail below based on examples, but the present invention is not limited to these examples.

[0114] Epoxy resin compositions of Examples and Comparative Examples were prepared by mixing components such as epoxy resin (A) in the blending ratios shown in Table 1. The numerical values ​​for each component in Table 1 indicate parts by mass.

[0115] Each component in Table 1 is explained below. Epoxy resin (A) YDF-8170 (product name): bisphenol F type epoxy resin, epoxy equivalent 160 g / eq, liquid at 25°C, manufactured by Nippon Steel Chemical & Material Co., Ltd. jER630 (product name): glycidylamine type epoxy resin, epoxy equivalent 98 g / eq, liquid at 25°C, manufactured by Mitsubishi Chemical Corporation EP-3980S: glycidylamine type liquid epoxy resin, epoxy equivalent 115 g / eq, liquid at 25°C, manufactured by ADEKA Corporation YX7400N (product name): aliphatic epoxy resin, epoxy equivalent 440 g / eq, liquid at 25°C, manufactured by Mitsubishi Chemical Corporation Compound (B) (carbonate compound (B1)) NT2006 / product name is PEPCD NT2006, a polycarbonate diol compound having a tetramethylene glycol structure as an alkylene glycol structure, liquid (transparent) at 25°C, number average molecular weight 2000, glass transition temperature -84°C, manufactured by Mitsubishi Chemical Corporation NT2002 / product name is PEPCD NT2002, a polycarbonate diol compound having a tetramethylene glycol structure as an alkylene glycol structure, liquid (transparent) at 25°C, number average molecular weight 2000, glass transition temperature -71°C, manufactured by Mitsubishi Chemical Corporation (Ether compound (B2)) PTMG2000 (product name) / polytetramethylene ether glycol, number average molecular weight 2000, manufactured by Mitsubishi Chemical Corporation Inorganic filler (C) SE605H-SMG: silica filler, average particle size 1.8 μm, maximum particle size 5.0 μm, manufactured by Admatechs Co., Ltd. YA050C-SM1: Silica filler, average particle size 50 nm, manufactured by Admatechs Co., Ltd. Curing accelerator (D) 2P4MZ (product name): 2-phenyl-4-methylimidazole, imidazole-based curing accelerator, manufactured by Shikoku Chemical Industry Co., Ltd. 2MZA (product name): 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, imidazole-based curing accelerator, manufactured by Shikoku Chemical Industry Co., Ltd. Curing agent (E) MEH8005 (product name): phenol-based curing agent, active hydrogen equivalent 135 g / eq, manufactured by Meiwa Chemical Industry Co., Ltd.

[0116] (Evaluation 1: Viscosity Evaluation) The viscosity (Pa s) at 25°C immediately after preparation of the epoxy resin compositions of the Examples and Comparative Examples was measured using a Brookfield HB-DV viscometer (model number: HB-DV1, spindle SC4-14) when the epoxy resin compositions were rotated at 10 rpm for 1 minute at a liquid temperature of 25°C. The results are shown in Table 1 under "Viscosity at 25°C (Pa s)."

[0117] (Evaluation 2: Warpage Measurement) A 300 μm thick, 10 mm square chip was fixed with adhesive onto a circular silicon wafer with a diameter of 300 mm and a thickness of 775 μm to obtain a substrate. Using a molding device (Apic Yamada Corporation, WCM-300), the epoxy resin compositions of the Examples and Comparative Examples were applied to the substrate to a thickness of 100 μm. The substrate to which the epoxy resin composition was applied was molded under conditions of 120°C, a mold cure time of 600 seconds, and a clamping force of 250 kN, followed by post-mold cure (PMC) at 150°C for 1 hour. The resulting sealed body was allowed to stand for 1 hour immediately after PMC, and then the amount of warpage at 25°C was measured using a shadow moiré device (Akrometrix, AXP 2.0-DFP2). The highest point was recorded as the amount of warpage when the sample was placed on a horizontal table with the cured surface facing up. The results are shown in Table 1 under "Wafer warpage (μm)".

[0118] (Evaluation 3: Glass Transition Temperature, Tg) Using a dynamic viscoelasticity apparatus, the storage modulus (E') and loss modulus (E'') of the cured products of the epoxy resin compositions of the Examples and Comparative Examples were measured, and the peak value of tan δ, which is the ratio of these values, was determined as the glass transition temperature (Tg). This measurement was performed in accordance with Japanese Industrial Standard JIS C6481. First, spacers (heat-resistant tape superimposed) were placed in two locations on a 3 mm thick glass plate with a release agent so that the film thickness of the cured product would be 2000±100 μm. Next, the epoxy resin composition was applied between the spacers, sandwiched between other glass plates with a release agent while taking care not to trap air bubbles, and cured at 150°C for 60 minutes to obtain a cured product. This cured product was then peeled from the glass plate with the release agent and cut to the specified dimensions (10 mm x 50 mm) using a cutter to obtain test specimens. The glass transition temperature (Tg) of this test piece was measured using a dynamic thermomechanical analyzer (DMA) (product name: DMA7100, manufactured by Hitachi High-Tech Science Corporation) in the range of -60°C to 260°C, at a frequency of 1 Hz, at a heating rate of 3°C / min, and by a double-support bending method. The results are shown in "Tg (°C)" in Table 1.

[0119] (Evaluation 4: Measurement of coefficient of thermal expansion, CTE) The epoxy resin compositions of the examples and comparative examples were heat-cured at 150°C for 1 hour to prepare test specimens. The coefficient of thermal expansion of these test specimens was measured at 0 to 40°C by thermomechanical analysis (TMA) using a TMA4000SA series from Bruker ASX. The results are shown in Table 1 as "CTE (ppm / °C)".

[0120] (Evaluation 5: Measurement of Adhesion Strength) The epoxy resin compositions of the Examples and Comparative Examples were adhered to a 10 mm square silicon chip using a mold so as to form a truncated cone shape with a bottom diameter of 5 mm, a top diameter of 3 mm, and a height of 6 mm, and then heated and cured at 150°C for 2 hours to prepare a test specimen. The resin portion of this test specimen was peeled off using a bond tester (Dage 4000, manufactured by Nordson Advanced Technologies Co., Ltd.), and the shear adhesive strength (MPa) was measured. The results are shown in Table 1 under "Adhesion Strength (MPa)."

[0121] (Evaluation 6: Measurement of Microvoids) The epoxy resin compositions of the Examples and Comparative Examples were applied to a silicon wafer and cured at a mold temperature of 120 to 150°C, a molding time of 300 to 900 seconds, a curing temperature of 150°C, and a curing time of 60 minutes to obtain a cured product. The cured product was cut into 0.5 cm square pieces with the silicon wafer attached, and the cross sections were polished using a cross-section polisher (model number IB380103-0003) manufactured by Shimadzu Science Corporation at an acceleration voltage of 5 kV and a processing time of 180 minutes. A field emission scanning electron microscope (FE-SEM) manufactured by Carl Zeiss K.K. was used to observe a 4.0 x 5.6 μm area at a magnification of 20,000x, and the number of voids with a circle-equivalent diameter of 0.05 μm or more present within the same area was counted. The results are shown in Table 1 under "Microvoids (number)."

[0122]

[0123] Variations of the invention according to the present disclosure are described below. [Appendix 1] An epoxy resin composition comprising an epoxy resin (A), a compound (B) containing a carbonate group (-O-(C=O)-O-) and / or an ether group (-O-) in the molecule, an inorganic filler (C), and a curing accelerator (D). [Appendix 2] The epoxy resin composition according to Appendix 1, wherein the epoxy resin (A) is at least one selected from the group consisting of a bisphenol-type epoxy resin such as a bisphenol F-type epoxy resin, a glycidylamine-type epoxy resin, and a naphthalene-type epoxy resin. [Appendix 3] The epoxy resin composition according to Appendices 1 or 2, wherein the content of the epoxy resin (A), relative to the epoxy resin composition (100% by mass), is 1% by mass or more, 3% by mass or more, 5% by mass or more, 7% by mass or more, or 8% by mass or more; 30% by mass or less, 25% by mass or less, 20% by mass or less, 18% by mass or less, or 16% by mass or less; and / or 1 to 30% by mass, 3 to 25% by mass, 5 to 20% by mass, 7 to 18% by mass, or 8 to 16% by mass. [Appendix 4] The epoxy resin composition according to any one of Appendices 1 to 3, wherein compound (B) contains a carbonate group (—O—(C═O)—O—). [Appendix 5] The epoxy resin composition according to any one of Appendices 1 to 4, wherein compound (B) has a polytetramethylene ether structure in the molecule. [Appendix 6] The epoxy resin composition according to any one of Appendices 1 to 5, wherein compound (B) has at least one substituent selected from the group consisting of a hydroxyl group, a carboxy group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, and a (meth)acryloyl group. [Appendix 7] The epoxy resin composition according to Appendices 6, wherein the substituent in compound (B) is at least one selected from the group consisting of a hydroxyl group and an epoxy group. [Appendix 8] The epoxy resin composition according to Appendices 1 to 5, wherein compound (B) has at least one substituent selected from the group consisting of a hydroxyl group and an epoxy group. [In the formula, n １ is an integer of 1 or more. １ are the same or different and are a carbonate group (-O-(C=O)-O-), an ether group (-O-), an ester group (-(C=O)-O- or -O-(C=O)-), or an amide group (-NH-(C=O)- or -(C=O)-NH-). １At least one of R is a carbonate group (—O—(C═O)—O—) or an ether group (—O—). １ and R ２ are the same or different and each is a linear or branched alkylene group. １ and Y ２ and are the same or different and are a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.] [Appendix 9] The epoxy resin composition according to any one of Appendices 1 to 7, wherein compound (B) is a compound represented by the following formula (2): [In the formula, n １１ is an integer of 1 or more. ２１ is an integer of 0 or greater. ２ are the same or different and are an ether group (-O-), an ester group (-(C=O)-O- or -O-(C=O)-), or an amide group (-NH-(C=O)- or -(C=O)-NH-). １１ , R ２１ , and R ３１ are the same or different and each is a linear or branched alkylene group. １１ and Y ２１ and are the same or different and are a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.] [Appendix 10] The epoxy resin composition according to any one of Appendices 1 to 8, wherein compound (B) is a compound represented by the following formula (3): [In the formula, n １２ is an integer of 1 or more. ２２ is an integer of 0 or greater. １２ , R ２２ , and R ３２ are the same or different and each is a linear or branched alkylene group. １２ and Y ２２ and are the same or different and are a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.] [Appendix 11] The epoxy resin composition according to any one of Appendices 1 to 9, wherein compound (B) is a compound represented by the following formula (4): [In the formula, n１３ is an integer of 1 or more. ２３ is an integer of 0 or greater. ３ are the same or different and are an ester group (-(C=O)-O- or -O-(C=O)-) or an amide group (-NH-(C=O)- or -(C=O)-NH-). １３ , R ２３ , and R ３３ are the same or different and each is a linear or branched alkylene group. １３ and Y ２３ and are the same or different and are a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.] [Appendix 12] The epoxy resin composition according to any one of Appendices 1 to 10, wherein compound (B) is a compound represented by the following formula (5): [In the formula, n １４ is an integer of 1 or more. １４ and R ２４ are the same or different and each is a linear or branched alkylene group. １４ and Y ２４and are the same or different and represent a hydroxyl group, a carboxy group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.] [Appendix 13] The epoxy resin composition according to any one of Appendices 1 to 12, wherein compound (B) has a molecular weight (number average molecular weight when there is a molecular weight distribution) of 200 to 6,000, 500 to 5,700, 1,000 to 5,400, or 1,400 to 5,200. [Appendix 14] The epoxy resin composition according to any one of Appendices 1 to 13, wherein compound (B) has a weight average molecular weight of 500 to 16,000, 1,000 to 14,000, 2,000 to 13,000, or 3,000 to 12,000. [Appendix 15] The epoxy resin composition according to any one of Appendices 1 to 14, wherein the content of compound (B) relative to the epoxy resin composition (100% by mass) is 0.1% by mass or more, 0.2% by mass or more, 0.3% by mass or more, 0.4% by mass or more, or 0.5% by mass or more; 30% by mass or less, 15% by mass or less, 12% by mass or less, 10% by mass or less, or 8% by mass or less; and / or 0.1 to 30% by mass, 0.2 to 15% by mass, 0.3 to 12% by mass, 0.4 to 10% by mass, or 0.5 to 8% by mass. [Appendix 16] The epoxy resin composition according to any one of Appendices 1 to 15, wherein the content of compound (B) relative to the epoxy resin (A) (100 mass%) contained in the epoxy resin composition is 0.5 mass% or more, 1 mass% or more, 2 mass% or more, or 3 mass% or more; 100 mass% or less, 80 mass% or less, 70 mass% or less, or 60 mass% or less; and / or 0.5 to 100 mass%, 1 to 80 mass%, 2 to 70 mass%, or 3 to 60 mass%. [Appendix 17] The epoxy resin composition according to any one of Appendices 1 to 16, wherein when the epoxy resin composition contains a curing agent (E), the content of the compound (B) relative to the epoxy resin (A) (100% by mass) contained in the epoxy resin composition is 1% by mass or more, 2% by mass or more, 3% by mass or more, or 4% by mass or more; 30% by mass or less, 25% by mass or less, or 20% by mass or less; and / or 1 to 30% by mass, 2 to 25% by mass, 3 to 20% by mass, or 4 to 20% by mass.[Appendix 18] The epoxy resin composition according to any one of Appendices 1 to 17, comprising, as the inorganic filler (C), at least one selected from the group consisting of silica (silicon dioxide), silicon carbide, silicon nitride, alumina (aluminum oxide), aluminum nitride, aluminum hydroxide, aluminum silicate, magnesium silicate, calcium silicate, calcium carbonate, barium sulfate, barium carbonate, titanium oxide, lime sulfate, potassium titanate, magnesium carbonate, zinc oxide, boron nitride, zirconia (zirconium oxide), and inorganic particles having their surfaces treated. [Appendix 19] The epoxy resin composition according to any one of Appendices 1 to 18, comprising, as the inorganic filler (C), a first silica having an average particle size of 10 nm or more but less than 100 nm, and a second silica having an average particle size of 0.1 to 5.0 μm. [Appendix 20] The epoxy resin composition according to any one of Appendices 1 to 19, wherein the content of the inorganic filler (C) relative to the epoxy resin composition (100 mass%) is 50 mass% or more, 60 mass% or more, 70 mass% or more, 75 mass% or more, or 80 mass% or more; 96 mass% or less, 93 mass% or less, 90 mass% or less, or 88 mass% or less; and / or 50 to 96 mass%, 60 to 93 mass%, 70 to 90 mass%, 75 to 88 mass%, or 80 to 88 mass%. [Appendix 21] The epoxy resin composition according to any one of Appendices 1 to 20, wherein the content of the inorganic filler (C) relative to the epoxy resin (A) (100% by mass) contained in the epoxy resin composition is 200% by mass or more, 400% by mass or more, or 500% by mass or more; 2500% by mass or less, 2000% by mass or less, 1500% by mass or less, or 1000% by mass or less; and / or 200 to 2500% by mass, 400 to 2000% by mass, 500 to 1500% by mass, or 500 to 1000% by mass. [Appendix 22] The epoxy resin composition according to any one of Appendices 1 to 21, wherein the curing accelerator (D) is at least one selected from the group consisting of an imidazole curing accelerator, a tertiary amine curing accelerator, and a phosphorus curing accelerator.[Appendix 23] The epoxy resin composition according to any one of Appendices 1 to 22, wherein the content of the curing accelerator (D), relative to the epoxy resin composition (100% by mass), is 0.01% by mass or more, 0.02% by mass or more, 0.04% by mass or more, 0.06% by mass or more, or 0.08% by mass or more; 5% by mass or less, 3% by mass or less, 2% by mass or less, or 1% by mass or less; and / or 0.01 to 5% by mass, 0.02 to 3% by mass, 0.04 to 2% by mass, 0.06 to 1% by mass, or 0.08 to 1% by mass. [Appendix 24] The epoxy resin composition according to any one of Appendices 1 to 23, wherein the content of the curing accelerator (D), relative to the epoxy resin (A) (100% by mass) contained in the epoxy resin composition, is 0.1% by mass or more, 0.2% by mass or more, 0.4% by mass or more, 0.6% by mass or more, or 0.8% by mass or more; 30% by mass or less, 20% by mass or less, 15% by mass or less, or 10% by mass or less; and / or 0.1 to 30% by mass, 0.2 to 20% by mass, 0.4 to 15% by mass, 0.6 to 10% by mass, or 0.8 to 10% by mass. [Appendix 25] The epoxy resin composition according to any one of Appendices 1 to 24, further comprising a curing agent (E). [Appendix 26] The epoxy resin composition according to any one of Appendices 1 to 25, further comprising, as the curing agent (E), at least one selected from the group consisting of an amine-based curing agent, an acid anhydride-based curing agent, and a phenol-based curing agent. [Appendix 27] The epoxy resin composition according to Appendix 25 or 26, wherein the content of the curing agent (E) relative to the epoxy resin composition (100% by mass) is 0.01% by mass or more, 0.02% by mass or more, 0.04% by mass or more, 0.06% by mass or more, or 0.08% by mass or more; 5% by mass or less, 3% by mass or less, 2% by mass or less, or 1% by mass or less; and / or 0.01 to 5% by mass, 0.02 to 3% by mass, 0.04 to 2% by mass, 0.06 to 1% by mass, or 0.08 to 1% by mass.[Appendix 28] The epoxy resin composition according to any one of Appendices 25 to 27, wherein the content of the curing agent (E) relative to the epoxy resin (A) (100 mass%) contained in the epoxy resin composition is 0.2 mass% or more, 0.4 mass% or more, 0.8 mass% or more, 1.5 mass% or more, or 2.0 mass% or more; 20 mass% or less, 10 mass% or less, 8 mass% or less, or 6 mass% or less; and / or 0.2 to 20 mass%, 0.4 to 10 mass%, 0.8 to 8 mass%, 1.5 to 6 mass%, or 2.0 to 6 mass%. [Appendix 29] The epoxy resin composition according to any one of Appendices 1 to 28, wherein the content of components other than the epoxy resin (A), the compound (B), the inorganic filler (C), the curing accelerator (D), and the curing agent (E), i.e., the other component (F), relative to the epoxy resin composition (100% by mass) is 10% by mass or less, 5% by mass or less, 3% by mass or less, or 1% by mass or less; and / or 0.01% by mass or more, or 0.1% by mass or more. [Appendix 30] The epoxy resin composition according to any one of Appendices 1 to 29, wherein the content of a solvent relative to the epoxy resin composition (100% by mass) is 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.1% by mass or less, or 0.01% by mass or less; and / or 0.001% by mass or more. [Appendix 31] The epoxy resin composition according to any one of Appendices 1 to 30, wherein the viscosity of the epoxy resin composition at 25°C is 1 to 2,000 Pa·s, 5 to 1,500 Pa·s, 10 to 1,000 Pa·s, or 50 to 500 Pa·s. [Appendix 32] The epoxy resin composition according to any one of Appendices 1 to 31, wherein the cured product obtained by curing the epoxy resin composition at 150°C for 60 minutes has a glass transition temperature Tg of 100°C or higher, or 105°C or higher; 200°C or lower, or 180°C or lower; and / or 100 to 200°C, or 105 to 180°C or higher. [Appendix 33] The epoxy resin composition according to any one of Appendices 1 to 32, which is a liquid compression molding material. [Appendix 34] A cured product of the epoxy resin composition according to any one of Appendices 1 to 33. [Supplementary Note 35] A semiconductor device comprising the cured product according to Supplementary Note 34.[Appendix 36] A semiconductor device comprising a support, a semiconductor element mounted on the support, and the cured product according to Appendix 34 that encapsulates the semiconductor element. [Appendix 37] A method for manufacturing a semiconductor device, comprising the steps of: supplying an epoxy resin composition according to any one of Appendixes 1 to 33 onto a laminate comprising a support and a semiconductor element mounted on the support, filling a gap between the support and the semiconductor element with the epoxy resin composition to form a molded body, and curing the molded body to encapsulate the semiconductor element, thereby obtaining a sealed body. [Appendix 38] A method for manufacturing a semiconductor device according to Appendix 37, further comprising the step of polishing the sealed body.

[0124] REFERENCE SIGNS LIST 1 Semiconductor element 2 Solder bump 3 Support 4 Laminate 5 Epoxy resin composition 6 Syringe 7 Mold 8 Compression molded body 9 Sealed body 11 Semiconductor element 12 Solder bump 13 Support 14 Laminate 15 Epoxy resin composition 16 Syringe 17 Mold 18 Compression molded body 19 Sealed body

Claims

1. An epoxy resin composition comprising: an epoxy resin (A); a compound (B) containing a carbonate group (—O—(C═O)—O—) and / or an ether group (—O—) in the molecule; an inorganic filler (C); and a curing accelerator (D).

2. The epoxy resin composition according to claim 1, wherein compound (B) contains a carbonate group (-O-(C=O)-O-).

3. The epoxy resin composition according to claim 1 or 2, wherein compound (B) has a polytetramethylene ether structure in the molecule.

4. The epoxy resin composition according to claim 1 or 2, wherein compound (B) has at least one substituent selected from the group consisting of a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, and a (meth)acryloyl group.

5. The epoxy resin composition according to claim 4, wherein the substituent in compound (B) is at least one selected from the group consisting of a hydroxyl group and an epoxy group.

6. Compound (B) is represented by the following formula (1): [In the formula, n １ is an integer of 1 or more. １ are the same or different and are a carbonate group (-O-(C=O)-O-), an ether group (-O-), an ester group (-(C=O)-O- or -O-(C=O)-), or an amide group (-NH-(C=O)- or -(C=O)-NH-). １ At least one of R is a carbonate group (—O—(C═O)—O—) or an ether group (—O—). １ and R ２ are the same or different and each is a linear or branched alkylene group. １ and Y ２ and are the same or different and are a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

7. Compound (B) is represented by the following formula (2): [In the formula, n １１ is an integer of 1 or more. ２１ is an integer of 0 or greater. ２ are the same or different and are an ether group (-O-), an ester group (-(C=O)-O- or -O-(C=O)-), or an amide group (-NH-(C=O)- or -(C=O)-NH-). １１ , R ２１ , and R ３１ are the same or different and each is a linear or branched alkylene group. １１ and Y ２１ and are the same or different and are a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

8. Compound (B) is represented by the following formula (3): [In the formula, n １２ is an integer of 1 or more. ２２ is an integer of 0 or greater. １２ , R ２２ , and R ３２ are the same or different and each is a linear or branched alkylene group. １２ and Y ２２ and are the same or different and are a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

9. Compound (B) is represented by the following formula (4): [In the formula, n １３ is an integer of 1 or more. ２３ is an integer of 0 or greater. ３ are the same or different and are an ester group (-(C=O)-O- or -O-(C=O)-) or an amide group (-NH-(C=O)- or -(C=O)-NH-). １３ , R ２３ , and R ３３ are the same or different and each is a linear or branched alkylene group. １３ and Y ２３ and are the same or different and are a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

10. Compound (B) is represented by the following formula (5): [In the formula, n １４ is an integer of 1 or more. １４ and R ２４ are the same or different and each is a linear or branched alkylene group. １４ and Y ２４ and are the same or different and are a hydroxyl group, a carboxyl group, an epoxy group, a glycidyl group, an oxetanyl group, a vinyl group, an allyl group, or a (meth)acryloyl group.

11. The epoxy resin composition according to claim 1 or 2, wherein the molecular weight of compound (B) (number average molecular weight when there is a molecular weight distribution) is 200 to 6,000.

12. The epoxy resin composition according to claim 1 or 2, wherein the content of compound (B) is 0.1 to 30% by mass relative to the epoxy resin composition (100% by mass).

13. The epoxy resin composition according to claim 1 or 2, wherein the Tg of the cured product of the epoxy resin composition is 100°C or higher.

14. The epoxy resin composition according to claim 1 or 2, further comprising a curing agent (E).

15. The epoxy resin composition according to claim 14, wherein the content of the curing agent (E) relative to the epoxy resin composition (100% by mass) is 0.01 to 5% by mass.

16. The epoxy resin composition according to claim 1 or 2, which is a liquid compression molding material.

17. A cured product of the epoxy resin composition according to claim 1 or 2.

18. A semiconductor device comprising the cured product according to claim 17.

19. A semiconductor device comprising: a support; a semiconductor element mounted on the support; and the cured product according to claim 17 that encapsulates the semiconductor element.

20. A method for manufacturing a semiconductor device, comprising the steps of: supplying the epoxy resin composition according to claim 1 or 2 onto a laminate comprising a support and a semiconductor element mounted on the support; filling the gap between the support and the semiconductor element with the epoxy resin composition to form a molded body; and curing the molded body to encapsulate the semiconductor element, thereby obtaining an encapsulated body.

21. The method for manufacturing a semiconductor device according to claim 20, further comprising the step of polishing the encapsulant.

Images