Plasma-resistant composite and method for producing same

Abstract

The present invention relates to: a method for producing a plasma-resistant composite having improved optical properties; and a plasma-resistant composite.

Description

Plasma-resistant complex and method for producing the same

[0001] This invention claims the benefit of Korean Patent Application No. 10-2024-0086075, filed with the Korean Intellectual Property Office on July 1, 2024, the entire contents of which are incorporated herein by reference. The present invention relates to a plasma-resistant composite and a method for preparing the same.

[0002] Plasma etching processes are used in semiconductor and display manufacturing. With the recent adoption of nanotechnology, the difficulty of etching has increased. Internal components of process chambers exposed to high-density plasma environments are primarily made of corrosion-resistant oxide ceramics, such as alumina (Al2O3) and yttria (Y2O3).

[0003] When polycrystalline materials are exposed to high-density plasma etching environments using fluorine-based gases for extended periods, localized erosion can cause particle loss, increasing the likelihood of contaminating particles. This can lead to defects in semiconductors and displays and negatively impact production yields. Furthermore, oxide-based ceramic materials have a high melting temperature, which limits workability.

[0004] There is a need for technology development that can prevent thermal shock damage, reduce dielectric constant, and control viscosity to easily form it into a desired shape.

[0005] Meanwhile, quartz has long been used as a representative material for focus rings in etching equipment due to its low cost, reasonable dielectric constant, and suitable etching characteristics. However, as the plasma environment within semiconductor chambers has become increasingly harsh, rapid etching has shortened the replacement cycle of quartz, leading to various attempts to replace it.

[0006] Recently, there have been many attempts to replace amorphous glass as a material for focus rings. However, because SiO2, a key material for vitrification, has a strong network structure, producing glass with a high SiO2 content has been challenging. Metals, such as Al and Ca, which are inevitably included for vitrification, increase the dielectric constant and pose a risk of increased contamination due to gases generated during the etching process, necessitating further improvement.

[0007] In addition, it was necessary to develop a method for easily manufacturing a plasma-resistant composite containing high contents of SiO2 and Al2O3 and having excellent optical properties.

[0008] An embodiment of the present invention provides a method for easily manufacturing a plasma-resistant composite by including a Si-based oxide and an Al-based oxide and controlling the temperature of a heating step, and a plasma-resistant composite.

[0009] However, the problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned can be clearly understood by those skilled in the art from the description below.

[0010] According to a first aspect of the present invention, a method for producing a plasma-resistant composite is provided, comprising: a step of providing a second substrate on a first substrate; and a step of heating the first substrate and the second substrate to a temperature of 520°C or higher and 890°C or lower; wherein each of the first substrate and the second substrate includes a Si-based oxide and an Al-based oxide.

[0011] According to the second aspect of the present invention, the heating step may apply pressure while heating the first substrate and the second substrate.

[0012] According to a third aspect of the present invention, after the heating step, a step of applying pressure to the first substrate and the second substrate may be further included.

[0013] According to the fourth aspect of the present invention, in each of the first substrate and the second substrate, the content of the Si-based oxide may be 30 wt% or more and 90 wt% or less, and the content of the Al-based oxide may be 3 wt% or more and 30 wt% or less.

[0014] According to the fifth aspect of the present invention, at least one or more may be included from the group consisting of Ca-based oxides, Mg-based oxides, Mg-based fluorides, Sr-based oxides, Ba-based oxides, or Zr-based oxides.

[0015] According to the sixth aspect of the present invention, the pressure applied to the first substrate and the second substrate is 0.5 kg / cm 2 More than 1.5 kg / cm 2 It could be as follows:

[0016] According to a seventh aspect of the present invention, a plasma-resistant composite is provided, wherein a second substrate is provided on a first substrate and has a reflectivity of 5.6% or more.

[0017] According to the eighth aspect of the present invention, when irradiating light having a wavelength of 400 nm or more and 800 nm or less, the reflectance may be 5.6% or more and 10% or less.

[0018] According to the ninth aspect of the present invention, the absorption coefficient may be 0.1 or more.

[0019] According to the tenth aspect of the present invention, when irradiating light having a wavelength of 400 nm or more and 800 nm or less, the absorption coefficient may be 0.1 or more and 0.2 or less.

[0020]

[0021] A method for manufacturing a plasma-resistant composite according to one embodiment of the present invention can easily manufacture a plasma-resistant composite including a Si-based oxide and an Al-based oxide.

[0022] A plasma-resistant composite according to one embodiment of the present invention may have a reflectivity of 5.6% or more and may improve bonding strength.

[0023] The effects of the present invention are not limited to the effects described above, and effects not mentioned will be clearly understood by those skilled in the art from the present specification and the attached drawings.

[0024]

[0025] Figure 1 is a schematic diagram showing a method for manufacturing a plasma-resistant complex of the present invention.

[0026] Fig. 2 is a photograph showing the exterior and cross-section of an embodiment according to one embodiment of the present invention. Fig. 2 (a) shows the exterior of the embodiment, and Fig. 2 (b) is a photograph showing a cross-section of the adhesive surface.

[0027] Figure 3 is an external photograph of Comparative Example 1.

[0028] Figure 4 is an external photograph of Comparative Example 2.

[0029] Figure 5 is a graph showing the reflectance according to the light wavelength of an example and a reference example according to one embodiment of the present invention.

[0030]

[0031] Throughout this specification, whenever a part is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise stated.

[0032] Throughout this specification, terms including ordinal numbers, such as "first" and "second," are used to distinguish one component from another and are not limited by the ordinal numbers. For example, within the scope of the invention, the first component may also be referred to as the second component, and similarly, the second component may be referred to as the first component.

[0033] Throughout this specification, “at least one of a, b and c” may include a, b or c alone, or a combination of two or more selected from the group consisting of a, b and c.

[0034] In this specification, “plasma resistance” may mean that the resistance to etching by plasma is high, and that the etching speed by plasma is implemented at a low rate.

[0035] In this specification, the "absorption coefficient" may indicate the degree to which the amount of irradiated light decreases due to absorption when passing through a certain layer. The wavelength of the radiation used to measure the absorption coefficient is 400 nm or more and 800 nm or less. The "absorption coefficient" may be measured using a known method.

[0036] In this specification, "reflectivity" refers to the degree to which irradiated light is reflected from the surface of an object, and "reflectivity" refers to the percentage of light reflected with respect to light incident perpendicularly to the substrate, wherein the wavelength of the irradiated light is 400 nm or more and 800 nm or less. The reflectivity can be measured using a known method.

[0037] The drawings attached to this specification illustrate preferred embodiments of the invention and, together with the description of the invention, serve to explain the principles of the invention, but are not intended to limit the scope of the invention. Furthermore, the shape, size, scale, or ratio of elements in the drawings included in this specification may be exaggerated for clarity.

[0038] Hereinafter, the present specification will be described in more detail.

[0039] Figure 1 is a schematic diagram illustrating a method for manufacturing a plasma-resistant complex of the present invention. Referring to Figure 1, a method for manufacturing a plasma-resistant complex according to one embodiment of the present invention will be described in detail.

[0040] One embodiment of the present invention provides a method for producing a plasma-resistant composite, comprising the steps of: providing a second substrate on a first substrate; and heating the first substrate and the second substrate to a temperature of 520°C or higher and 890°C or lower; wherein each of the first substrate and the second substrate includes a Si-based oxide and an Al-based oxide.

[0041] A method for manufacturing a plasma-resistant composite according to one embodiment of the present invention can provide a plasma-resistant composite with excellent optical properties. Specifically, a plasma-resistant composite with improved reflectance and absorption coefficient can be provided.

[0042] According to one embodiment of the present invention, the method for manufacturing the plasma-resistant composite includes a step of providing a second substrate on a first substrate. Specifically, the step of providing the second substrate on the first substrate is to position the second substrate on the first substrate. More specifically, the step may include a case where one side of the first substrate and the second substrate are provided to be in contact with each other, or a case where a component, i.e., another substrate, is included between the first substrate and the second substrate. When the second substrate is provided on the first substrate, the contactable surface area of ​​the first substrate and the second substrate increases, thereby increasing the efficiency of the manufacturing process of the plasma-resistant composite.

[0043] According to one embodiment of the present invention, the method for producing the plasma-resistant composite includes a step of heating the first substrate and the second substrate to 520°C or more and 890°C or less. Specifically, the heating temperature of the step of heating the first substrate and the second substrate may be 550°C or more and 650°C or less, 600°C or more and 700°C or less, 650°C or more and 800°C or less, 700°C or more and 800°C or less, 750°C or more and 890°C or less, 800°C or more and 890°C or less, 600°C or more and 800°C or less, or 600°C or more and 890°C or less. When the heating temperature of the step of heating the first substrate and the second substrate is within the above-mentioned range, the first substrate and the second substrate can be bonded to produce the plasma-resistant composite.

[0044] According to one embodiment of the present invention, the step of heating the first substrate and the second substrate may be annealing. Specifically, the heating temperature of the first substrate and the second substrate may be within the annealing temperature range. When the first substrate and the second substrate are annealed or heated at the annealing temperature, a plasma-resistant composite can be manufactured more efficiently.

[0045] According to one embodiment of the present invention, each of the first substrate and the second substrate includes a Si-based oxide and an Al-based oxide.

[0046] According to one embodiment of the present invention, since each of the first substrate and the second substrate includes a Si-based oxide, it is advantageous for improving contamination levels and can have a dielectric constant within a specific range. Furthermore, a plasma-resistant composite including the first substrate and the second substrate has improved light transmittance and improved hardness, thereby improving mechanical properties, thereby enhancing durability in a plasma etching environment.

[0047] According to one embodiment of the present invention, since each of the first substrate and the second substrate includes an Al-based oxide, the etching resistance of a plasma-resistant composite including the first substrate and the second substrate can be improved. In addition, contamination occurring during the etching process can be minimized and light transmittance can be improved.

[0048] According to one embodiment of the present invention, the Si-based oxide included in each of the first substrate and the second substrate is Si a O b (0 <a≤3, 0<b≤4)일 수 있으며, 상기 제1 기재 및 상기 제2 기재 각각에 포함된 상기 Al계 산화물은 Al c O d (0 <c≤3, 0<d≤4)일 수 있다. 구체적으로, 상기 제1 기재 및 제2 기재 각각에 포함되는 상기 Si계 산화물은 SiO2인 것이고, 상기 Al계 산화물은 Al2O3인 것일 수 있다.

[0049] When the Si-based oxide included in the first and second substrates is SiO2, the basic properties of the first and second substrates can be secured, and durability and reliability can be improved. In addition, the processing of the first and second substrates can be facilitated, thereby reducing the production cost of the parts.

[0050] When the Al-based oxide included in the first substrate and the second substrate is Al2O3, outgassing of the plasma-resistant complex can be prevented, generation of particles can be suppressed, and the wear resistance of internal parts of a chamber for a semiconductor manufacturing process can be improved.

[0051] According to one embodiment of the present invention, the heating step may include heating the first substrate and the second substrate while simultaneously applying pressure. Specifically, the applying of pressure, i.e., the pressurizing step, may include applying pressure simultaneously with the start of the heating step or during the heating step. When pressure is applied simultaneously with the heating step, a plasma-resistant composite can be efficiently manufactured.

[0052] Referring to the above drawing 1, the pressurizing step may apply pressure in the direction of the arrow indicated by the direction (A) of drawing 1. That is, it may include applying pressure in a direction forming an angle with the thickness direction of the first substrate and the second substrate. When pressure is applied to the first substrate and the second substrate in the above direction, the durability of the plasma-resistant composite may increase.

[0053] According to one embodiment of the present invention, after the heating step, a step of applying pressure to the first substrate and the second substrate may be further included. When pressure is applied after the heating step, a plasma-resistant composite can be efficiently manufactured.

[0054] According to one embodiment of the present invention, the pressure applied to the first substrate and the second substrate is 0.5 kg / cm 2 More than 1.5 kg / cm 2 It may be as follows. Specifically, the pressure applied to the first substrate and the second substrate is 0.6 kg / cm 2 More than 1.5 kg / cm 2 Below 0.7 kg / cm 2 More than 1.5 kg / cm 2 Below 0.8 kg / cm 2 More than 1.5 kg / cm 2 Below 0.9 kg / cm 2 More than 1.0 kg / cm 2 Below 0.5 kg / cm2 More than 1.0 kg / cm 2 Below 0.7 kg / cm 2 More than 1.2 kg / cm 2 Below 0.6 kg / cm 2 More than 1.1 kg / cm 2 Below 0.9 kg / cm 2 More than 1.3 kg / cm 2 Less than or equal to 0.8 kg / cm 2 More than 1.4 kg / cm 2 It may be as follows. When the pressure applied to the first substrate and the second substrate is within the above-mentioned range, a plasma-resistant composite with improved optical properties can be easily manufactured.

[0055] According to one embodiment of the present invention, the content of the Si-based oxide in each of the first substrate and the second substrate may be 30 wt% or more and 90 wt% or less, and the content of the Al-based oxide may be 3 wt% or more and 30 wt% or less.

[0056] According to one embodiment of the present invention, each of the first substrate and the second substrate may contain the Si-based oxide in an amount of 30 wt% or more and 90 wt% or less. Specifically, each of the first substrate and the second substrate may contain the Si-based oxide in an amount of 40 wt% or more and 90 wt% or less, 50 wt% or more and 90 wt% or less, 60 wt% or more and 90 wt% or less, 70 wt% or more and 90 wt% or less, 80 wt% or more and 90 wt% or less, 30 wt% or more and 80 wt% or less, 40 wt% or more and 80 wt% or less, 50 wt% or more and 60 wt% or less, or 45 wt% or more and 65 wt% or less. When the Si-based oxide contained in each of the first substrate and the second substrate is within the above-described range, the plasma-resistant composite can implement an appropriate level of dielectric constant, minimize impurities generated during plasma etching, and reduce costs.

[0057] According to one embodiment of the present invention, each of the first substrate and the second substrate may contain the Al-based oxide in an amount of 3 wt% or more and 30 wt% or less. Specifically, each of the first substrate and the second substrate may contain the Al-based oxide in an amount of 5 wt% or more and 30 wt% or less, 10 wt% or more and 30 wt% or less, 15 wt% or more and 30 wt% or less, 20 wt% or more and 30 wt% or less, 25 wt% or more and 30 wt% or less, 3 wt% or more and 10 wt% or less, 3 wt% or more and 20 wt% or less, 5 wt% or more and 15 wt% or less, 10 wt% or more and 15 wt% or less, or 20 wt% or more and 30 wt% or less. When the Si-based oxide included in the first substrate and the second substrate is within the aforementioned range, outgasing of the plasma-resistant complex can be prevented and generation of particles can also be suppressed.

[0058] According to one embodiment of the present invention, the range of the weight ratio of the Si-based oxide and the Al-based oxide included in each of the first substrate and the second substrate may be 1:1 to 30:1. Specifically, the range of the weight ratio of the Si-based oxide and the Al-based oxide included in each of the first substrate and the second substrate may be 3:1 to 10:1, 4:1 to 20:1, 5:1 to 30:1, 6:1 to 10:1, 7:1 to 20:1, 8:1 to 30:1, 9:1 to 10:1, 5:1 to 20:1, 3:1 to 5:1, 20:1 to 30:1, or 10:1 to 30:1. When the weight ratio of the Si-based oxide and the Al-based oxide included in each of the first substrate and the second substrate is within the above-mentioned range, a plasma-resistant composite can be stably manufactured.

[0059] According to one embodiment of the present invention, each of the first substrate and the second substrate may include at least one selected from the group consisting of Ca-based oxides, Mg-based oxides, Mg-based fluorides, Sr-based oxides, Ba-based oxides, and Zr-based oxides.

[0060] According to one embodiment of the present invention, the Ca-based oxide included in each of the first substrate and the second substrate may be CaO, the Mg-based oxide may be MgO, the Mg-based fluoride may be MgF2, the Sr-based oxide may be SrO, the Ba-based oxide may be BaO, and the Zr-based oxide may be ZrO2.

[0061] When the Ca-based oxide included in each of the first substrate and the second substrate is CaO, the thermal expansion coefficient and glass transition temperature of the plasma-resistant composite can be lowered, thereby minimizing thermal shock at high temperatures and improving the durability of components inside a chamber for a semiconductor manufacturing process, and implementing a dielectric constant within an appropriate range.

[0062] When the Zr-based oxide included in each of the first substrate and the second substrate is ZrO2, the thermal expansion coefficient and glass transition temperature of the plasma-resistant composite can be lowered, thermal shock at high temperatures can be minimized, durability of components inside a chamber for a semiconductor manufacturing process can be improved, and the dielectric constant can be implemented within an appropriate range.

[0063] When the Mg-based oxide included in each of the first and second substrates is MgO, the Mg-based fluoride is MgF2, the Sr-based oxide is SrO, and the Ba-based oxide is BaO, the etching resistance of the plasma-resistant composite can be improved. In addition, the contamination occurring during the etching process can be minimized and the light transmittance can be improved.

[0064] According to one embodiment of the present invention, each of the first substrate and the second substrate may contain Ca-based oxide in an amount of 5 wt% or more and 35 wt% or less. Specifically, each of the first substrate and the second substrate may contain Ca-based oxide in an amount of 10 wt% or more and 35 wt% or less, 15 wt% or more and 35 wt% or less, 20 wt% or more and 35 wt% or less, 25 wt% or more and 35 wt% or less, 30 wt% or more and 35 wt% or less, 10 wt% or more and 30 wt% or less, or 20 wt% or more and 30 wt% or less. When the Ca-based oxide contained in each of the first substrate and the second substrate is within the above-described range, the plasma-resistant composite can minimize contamination occurring during an etching process and improve light transmittance.

[0065] According to one embodiment of the present invention, each of the first substrate and the second substrate may contain Mg-based oxide in an amount of 15 wt% or more and 20 wt% or less. Specifically, each of the first substrate and the second substrate may contain Mg-based oxide in an amount of 16 wt% or more and 20 wt% or less, 17 wt% or more and 19 wt% or less, 15 wt% or more and 18 wt% or less, or 16 wt% or more and 17 wt% or less. When the Mg-based oxide contained in each of the first substrate and the second substrate is within the above-described range, the contamination of the plasma-resistant composite can be reduced while simultaneously improving the etching resistance.

[0066] According to one embodiment of the present invention, each of the first substrate and the second substrate may contain Mg-based fluoride in an amount of 1 wt% or more and 5 wt% or less. Specifically, each of the first substrate and the second substrate may contain Mg-based fluoride in an amount of 2 wt% or more and 5 wt% or less, 3 wt% or more and 5 wt% or less, 1 wt% or more and 5 wt% or less, 2 wt% or more and 4 wt% or less, or 1 wt% or more and 3 wt% or less. When the Mg-based fluoride contained in each of the first substrate and the second substrate is within the above-described range, the contamination of the plasma-resistant composite can be reduced while simultaneously improving the etching resistance.

[0067] According to one embodiment of the present invention, each of the first substrate and the second substrate may contain Sr-based oxide in an amount of 40 wt% or more and 60 wt% or less. Specifically, each of the first substrate and the second substrate may contain Sr-based oxide in an amount of 50 wt% or more and 60 wt% or less, 45 wt% or more and 60 wt% or less, 55 wt% or more and 60 wt% or less, 42 wt% or more and 50 wt% or less, 48 ​​wt% or more and 55 wt% or less, 55 wt% or more and 60 wt% or less, or 57 wt% or more and 60 wt% or less. When the Sr-based oxide contained in each of the first substrate and the second substrate is within the above-described range, the thermal shock of the plasma-resistant composite at high temperatures can be minimized, and the light transmittance and durability of the plasma-resistant composite can be improved.

[0068] According to one embodiment of the present invention, each of the first substrate and the second substrate may contain Ba-based oxide in an amount of 40 wt% or more and 60 wt% or less. Specifically, each of the first substrate and the second substrate may contain Ba-based oxide in an amount of 50 wt% or more and 60 wt% or less, 45 wt% or more and 60 wt% or less, 55 wt% or more and 60 wt% or less, 42 wt% or more and 50 wt% or less, 48 ​​wt% or more and 55 wt% or less, 55 wt% or more and 60 wt% or less, or 57 wt% or more and 60 wt% or less. When the Ba-based oxide contained in each of the first substrate and the second substrate is within the above-described range, the etching resistance of the plasma-resistant composite can be improved.

[0069] According to one embodiment of the present invention, each of the first substrate and the second substrate may contain a Zr-based oxide in an amount of 1 wt% or more and 20 wt% or less. Specifically, each of the first substrate and the second substrate may contain a Zr-based oxide in an amount of 1 wt% or more and 10 wt% or less, 1 wt% or more and 15 wt% or less, 5 wt% or more and 10 wt% or less, 5 wt% or more and 15 wt% or less, 10 wt% or more and 20 wt% or less, or 15 wt% or more and 20 wt% or less. When the Zr-based oxide contained in each of the first substrate and the second substrate is within the above-described range, the durability and light transmittance of the plasma-resistant composite can be improved.

[0070] According to one embodiment of the present invention, the composition and content of the first substrate and the second substrate may be the same or different from each other.

[0071] According to one embodiment of the present invention, when the first substrate and the second substrate each contain a Si-based oxide content of 40 wt% or more and 50 wt% or less, an Al-based oxide content of 15 wt% or more and 25 wt% or less, and a Ca-based oxide content of 30 wt% or more and 40 wt% or less, the annealing temperature may be 700°C or more and 900°C or less, or 740°C or more and 860°C or less.

[0072] According to one embodiment of the present invention, when the first substrate and the second substrate each contain a Si-based oxide content of 55 wt% or more and 65 wt% or less, an Al-based oxide content of 15 wt% or more and 25 wt% or less, an Mg-based oxide content of 15 wt% or more and 20 wt% or less, and an Mg-based fluoride content of 1 wt% or more and 5 wt% or less, the annealing temperature may be 800°C or more and 850°C or less, or 810°C or more and 830°C or less.

[0073] According to one embodiment of the present invention, when the first substrate and the second substrate each contain a Si-based oxide content of 50 wt% or more and 60 wt% or less, an Al-based oxide content of 25 wt% or more and 35 wt% or less, and an Mg-based oxide content of 15 wt% or more and 20 wt% or less, the annealing temperature may be 800°C or more and 850°C or less, or 810°C or more and 830°C or less.

[0074] According to one embodiment of the present invention, when the first substrate and the second substrate each contain a Si-based oxide content of 25 wt% or more and 45 wt% or less, an Al-based oxide content of 10 wt% or more and 20 wt% or less, and an Sr-based oxide content of 45 wt% or more and 55 wt% or less, the annealing temperature may be 600°C or more and 750°C or less, or 640°C or more and 710°C or less.

[0075] According to one embodiment of the present invention, when the first substrate and the second substrate each contain a Si-based oxide content of 40 wt% or more and 50 wt% or less, an Al-based oxide content of 1 wt% or more and 10 wt% or less, and a Ba-based oxide content of 45 wt% or more and 55 wt% or less, the annealing temperature may be 600°C or more and 700°C or less, or 640°C or more and 660°C or less.

[0076] According to one embodiment of the present invention, when the first substrate and the second substrate each contain a Si-based oxide content of 45 wt% or more and 55 wt% or less, an Al-based oxide content of 15 wt% or more and 25 wt% or less, a Ca-based oxide content of 15 wt% or more and 20 wt% or less, and a Zr-based fluoride content of 10 wt% or more and 20 wt% or less, the annealing temperature may be 800°C or more and 900°C or less, or 830°C or more and 870°C or less.

[0077] According to one embodiment of the present invention, when the first substrate and the second substrate each contain a Si-based oxide content of 85 wt% or more and 95 wt% or less, an Al-based oxide content of 1 wt% or more and 10 wt% or less, and a Ca-based oxide content of 1 wt% or more and 15 wt% or less, the annealing temperature may be 500°C or more and 650°C or less, or 540°C or more and 560°C or less.

[0078] According to one embodiment of the present invention, when the first substrate and the second substrate each contain a Si-based oxide content of 80 wt% or more and 90 wt% or less, an Al-based oxide content of 1 wt% or more and 10 wt% or less, and a Ca-based oxide content of 1 wt% or more and 10 wt% or less, the annealing temperature may be 550°C or more and 700°C or less, or 590°C or more and 630°C or less.

[0079] According to one embodiment of the present invention, the heating temperature of each of the first substrate and the second substrate can be controlled at an annealing temperature depending on the composition and content range of each of the first substrate and the second substrate. By controlling the heating temperature of each of the first substrate and the second substrate within the above-described range, the first substrate and the second substrate can be prevented from being over-melted, thereby reducing light transmittance, and preventing the bonding strength from being weakened.

[0080] According to one embodiment of the present invention, when the first substrate and the second substrate provided in the plasma-resistant composite are different, heating may be performed at a lower annealing temperature among the above-described annealing temperatures of the first substrate and the second substrate. By controlling the heating temperature in the case where the first substrate and the second substrate provided in the plasma-resistant composite are different as described above, it is possible to prevent the first substrate and the second substrate from being over-melted, thereby reducing the light transmittance, and to prevent the bonding strength from being weakened.

[0081] One embodiment of the present invention provides a plasma-resistant composite having a second substrate on a first substrate and a reflectivity of 5.6% or more.

[0082] According to one embodiment of the present invention, the plasma-resistant composite can improve the optical properties of the plasma-resistant composite by further improving the reflectance and absorption coefficient, and can implement properties similar to those of a single substrate and improve bonding strength.

[0083] In this specification, any overlapping content with the method for manufacturing the above-mentioned plasma-resistant complex will be omitted.

[0084] According to one embodiment of the present invention, when the reflectivity of the plasma-resistant composite is 5.6% or more, the etching rate can be implemented uniformly over the entire area of ​​the plasma-resistant composite. The reflectivity of the plasma-resistant composite can be measured using an ellipsometer (Elli-SEU-AM12, Ellipso tech. Co.).

[0085] According to one embodiment of the present invention, the dielectric constant of the plasma-resistant composite may be 5 or more and 9 or less. Specifically, the dielectric constant may be 5.5 or more and 8.5 or less, 5 or more and 8 or less, 6 or more and 9 or less, 8 or more and 9 or less, or 5.5 or more and 9 or less. Methods for measuring the dielectric constant include a capacitance method using an LCR meter, a reflection coefficient method using a network analyzer, a resonant frequency method, etc. As an example of a method for measuring the dielectric constant, the capacitance method using an LCR meter is mainly used to measure low-frequency characteristics (kHz, MHz), and the dielectric constant can be determined from the physical size and capacitance of the capacitor. More specifically, it may mean measuring the dielectric constant in a frequency range of 20 Hz to 100 Hz using a Keysight E4990A Impedance Analyzer. When the dielectric constant of the plasma-resistant composite is within the aforementioned range, the plasma-resistant composite can minimize thermal shock at high temperatures and improve the durability of components inside a chamber for a semiconductor manufacturing process. In addition, the optical transmittance and durability of the plasma-resistant composite can be improved.

[0086] According to one embodiment of the present invention, the plasma-resistant composite may have a light transmittance of 80% or more and 100% or less. Specifically, the plasma-resistant composite may have a light transmittance of 82% or more and 95% or less, 85% or more and 90% or less, 85% or more and 95% or less, 84% or more and 90% or less, or 80% or more and 90% or less. In the present specification, "light transmittance" may mean a value measured using a haze meter (JCH-300S, Oceanoptics Co.). When the light transmittance of the plasma-resistant composite is within the above-mentioned range, the melting degree of the plasma-resistant composite can be improved while simultaneously achieving high vitrification.

[0087] According to one embodiment of the present invention, when irradiated with light having a wavelength of 400 nm to 800 nm, a plasma-resistant composite having a reflectance of 5.6% to 10% can be provided. Specifically, the reflectance of the plasma-resistant composite may be 5.6% to 10%, 6.6% to 10%, 7.6% to 10%, 8.6% to 10%, 9.6% to 10%, 4% to 8%, 5% to 9%, 6% to 8%, 7% to 9%, or 8% to 9%. When the reflectance of the plasma-resistant composite is within the above-mentioned range, the etching resistance of the plasma-resistant composite can be improved.

[0088] According to one embodiment of the present invention, the wavelength of light irradiated to the plasma-resistant complex may be 400 nm to 800 nm. Specifically, the wavelength of light irradiated to the plasma-resistant complex may be 500 nm to 800 nm, 600 nm to 800 nm, 700 nm to 800 nm, 400 nm to 700 nm, 500 nm to 600 nm, or 600 nm to 700 nm.

[0089] According to one embodiment of the present invention, a plasma-resistant composite having an absorption coefficient of 0.1 or greater can be provided. The absorption coefficient represents the degree to which the plasma-resistant composite absorbs light. When the absorption coefficient of the plasma-resistant composite is 0.1 or greater, the integrity of the plasma-resistant composite can be improved, and the bonding strength between the first substrate and the second substrate can be improved.

[0090] According to one embodiment of the present invention, a plasma-resistant complex having an absorption coefficient of 0.1 to 0.2 can be provided when irradiated with light having a wavelength of 400 nm to 800 nm. Specifically, the absorption coefficient of the plasma-resistant complex may be 0.12 to 0.2, 0.12 to 0.2, 0.15 to 0.2, 0.18 to 0.2, 0.12 to 0.18, 0.13 to 0.17, 0.14 to 0.16, or 0.18 to 0.19. When the absorption coefficient of the plasma-resistant complex is within the above-mentioned range, the absorption coefficient can be uniformly implemented over the entire area of ​​the plasma-resistant complex. The absorption coefficient of the above plasma complex can be measured using an ellipsometer (Elli-SEU-AM12, Ellipso tech. Co.).

[0091] According to one embodiment of the present invention, the wavelength of light irradiated to the plasma-resistant complex may be 400 nm to 800 nm. Specifically, the wavelength of light irradiated to the plasma-resistant complex may be 500 nm to 800 nm, 600 nm to 800 nm, 700 nm to 800 nm, 400 nm to 700 nm, 500 nm to 600 nm, or 600 nm to 700 nm.

[0092]

[0093] Hereinafter, the present invention will be described in detail using examples. However, the examples according to the present invention may be modified in various ways, and the scope of the present invention is not limited to the examples described below. The examples in this specification are provided to more fully explain the present invention to those of ordinary skill in the art.

[0094]

[0095] Examples and Reference Examples

[0096] Table 1 below shows the components and contents of the composition for manufacturing the substrate.

[0097]

[0098] Ingredients: SiO2CaOAl2O3SiO2: Al2O3 content ratio (weight%) 47.1333.9218.952.49:1

[0099]

[0100] A composition was prepared by mixing the ingredients and contents of Table 1 above. The composition was then heated to 1,700°C for 4 hours to melt, and then cooled to room temperature to produce a substrate having a thickness of 0.5 mm. Furthermore, a reference example substrate having a thickness of 1.0 mm was prepared using the same method.

[0101] The substrates manufactured with the above thickness of 0.5 mm were prepared as the first substrate and the second substrate. Afterwards, one side of the second substrate was placed on the first substrate so that it was in contact with each other, and then heated within a temperature range of 750°C to 850°C. While heating the first and second substrates, the second substrate located on the upper side was directed toward the first substrate located on the lower side at a pressure of 1 kg / cm. 2 A first substrate and a second substrate were bonded by applying pressure, and an example of a plasma-resistant composite having a thickness of about 1 mm was manufactured.

[0102]

[0103] Comparative Example 1

[0104] Comparative Example 1, a plasma-resistant composite, was manufactured in the same manner as Example 1, except that the first substrate and the second substrate were heated to 500°C.

[0105]

[0106] Comparative Example 2

[0107] Comparative Example 2, a plasma-resistant composite, was manufactured in the same manner as Example 1, except that the first substrate and the second substrate were heated to 950°C.

[0108]

[0109] <Experimental Example 1: Bonding Evaluation According to Heating Temperature>

[0110] Figure 2 is a photograph of the exterior and cross-section of an embodiment according to one embodiment of the present invention. Figure 2 (a) shows the exterior of the embodiment, and Figure 2 (b) is a photograph showing a cross-section of the adhesive surface. Figure 3 is a photograph of the exterior of Comparative Example 1. Figure 4 is a photograph of the exterior of Comparative Example 2.

[0111] Referring to FIGS. 2 to 4, as shown in FIG. 2 (a) and FIG. 2 (b), a plasma-resistant composite was manufactured by bonding the first substrate and the second substrate.

[0112] Referring to Fig. 3, in Comparative Example 1, where the first substrate and the second substrate were heated at 500°C, the first substrate and the second substrate were not bonded, and thus a plasma-resistant composite was not produced.

[0113] Referring to Fig. 4, in Comparative Example 2, where the first and second substrates were heated at 950°C, the first and second substrates were bonded, but it was confirmed that crystallization occurred within the plasma-resistant composite. If crystallization occurs within the plasma-resistant composite, a deviation in the etching rate depending on the region may occur during the plasma etching process, which may result in a decrease in plasma resistance.

[0114] Through this, it can be seen that by heating and bonding the first substrate and the second substrate in the range of 520°C to 890°C, a plasma-resistant composite can be easily manufactured, and a plasma-resistant composite with excellent optical properties can be manufactured.

[0115]

[0116] <Experimental Example 2: Reflectance Measurement of a Plasma-Resistant Complex>

[0117] The reflectivity of the plasma-resistant complex of the above examples and the above reference examples was measured.

[0118] Specifically, using an ellipsometer, a wavelength within the range of 200 nm to 800 nm was incident at an angle to the second substrate of the plasma-resistant complex, and the percentage of reflected light was measured.

[0119] Figure 5 is a graph showing the reflectance according to the wavelength of light of an example and a reference example according to one embodiment of the present invention. Table 2 below shows the reflectance according to the wavelength of irradiation of the plasma-resistant composite of the example and the reference example.

[0120]

[0121] λ(nm) Reflectance(%) Example Reference Example 4 106.385.52 4546.295.355556.155.395876.135.406006.125.416606.155.398006.155.42

[0122]

[0123] Referring to the above Figure 5 and Table 2, the reflectance of the example was measured to be higher than that of the reference example in all wavelength ranges from 410 nm to 800 nm.

[0124] Through this, it was confirmed that the bonding surface of the example has similar crystallinity and bonding strength as the bonding surface of the reference example.

[0125]

[0126] <Experimental Example 3: Measurement of the Absorption Coefficient of a Plasma-Resistant Complex>

[0127] The absorption coefficient of the plasma-resistant complex of the above examples and the above reference examples was measured.

[0128] Specifically, the absorption coefficient at light of 400 nm to 800 nm was measured using an ellipsometer.

[0129] Table 3 below shows the absorption coefficients of the plasma-resistant complexes of the examples and the reference examples above by wavelength.

[0130]

[0131] λ(nm) Absorption coefficient Example Reference example 4 10 0.10 4 5 5 0.07 5 3 1 4 5 4 0.10 5 2 4 0.07 5 8 1 5 5 0.11 0 4 1 0.07 9 2 7 5 8 7 0.11 2 7 2 0.08 0 8 2 6 0 0 0.11 3 7 3 0.08 1 5 0 6 6 0 0.11 8 8 0 0.08 4 9 1 8 0 0 0.13 2 5 1 0.09 4 2 1

[0132]

[0133] Referring to Table 3 above, it was confirmed that the absorption coefficient of the example was higher than that of the reference example in all wavelength ranges from 400 nm to 800 nm.

[0134]

[0135] Therefore, the plasma-resistant composite and the method for manufacturing the same according to one embodiment of the present invention include a Si-based oxide and an Al-based oxide, and by controlling the temperature of the heating step, the bonding strength of the composite is improved and properties similar to those of a single substrate can be implemented.

[0136]

[0137] [Explanation of symbols]

[0138] 10: Plasma-resistant complex

[0139] 100: First article

[0140] 200: Second equipment

[0141] (A): Pressure direction

Claims

1. A step of providing a second substrate on a first substrate; and A step of heating the first substrate and the second substrate to a temperature of 520°C or higher and 890°C or lower; A method for manufacturing a plasma-resistant composite, wherein each of the first substrate and the second substrate includes a Si-based oxide and an Al-based oxide.

2. In claim 1, A method for producing a plasma-resistant composite, wherein the heating step is to heat the first substrate and the second substrate while applying pressure.

3. In claim 1, After the above heating step, A method for producing a plasma-resistant complex, further comprising the step of applying pressure to the first substrate and the second substrate.

4. In claim 1, In each of the above first description and the above second description The content of the above Si-based oxide is 30 wt% or more and 90 wt% or less, A method for manufacturing a plasma-resistant composite, wherein the content of the Al-based oxide is 3 wt% or more and 30 wt% or less.

5. In claim 1, Each of the above first description and the above second description A method for producing a plasma-resistant composite comprising at least one selected from the group consisting of Ca-based oxides, Mg-based oxides, Mg-based fluorides, Sr-based oxides, Ba-based oxides, and Zr-based oxides.

6. In claim 2 or claim 3, The pressure applied to the first substrate and the second substrate is 0.5 kg / cm 2 More than 1.5 kg / cm 2 A method for producing a plasma-resistant complex as follows.

7. A second substrate is provided on the first substrate, A plasma-resistant composite having a reflectivity of 5.6% or more.

8. In claim 7, A plasma-resistant composite having a reflectance of 5.6% to 10% when irradiated with light having a wavelength of 400 nm to 800 nm.

9. In claim 7, A plasma-resistant complex having an absorption coefficient of 0.1 or greater.

10. In claim 7, A plasma-resistant complex having an absorption coefficient of 0.1 or more and 0.2 or less when irradiated with light having a wavelength of 400 nm or more and 800 nm or less.

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