MEMS sensor and electronic atomization device

Abstract

A MEMS sensor (100) and an electronic atomization device (1000). The MEMS sensor (100) comprises a substrate (10), a base plate (20), a temperature measurement element (31), and an electrically conductive contact (40), wherein the substrate (10) has a first surface (11) and a second surface (12) opposite to each other, the first surface (11) being provided with a recess (13), the second surface (12) being provided with a Wheatstone bridge circuit (14), and a bridge arm of the Wheatstone bridge circuit (14) comprising a varistor (140); the base plate (20) covers the recess (13) to form a sealed cavity; the temperature measurement element (31) is arranged on the inner surface of the sealed cavity; the electrically conductive contact (40) is arranged on the substrate (10) and / or the base plate (20), and is electrically connected to the temperature measurement element (31); and the temperature measurement element (31) has a temperature coefficient of resistance.

Description

MEMS sensors and electronic atomization devices

[0001] This application claims priority to Chinese patent application No. 202410931036.5, filed on July 11, 2024, the entire contents of which are incorporated herein by reference. [Technical Field]

[0002] This application relates to the field of sensor technology, specifically to a MEMS sensor and an electronic atomization device. [Background Technology]

[0003] In recent years, with the rapid development of MEMS (Micro-Electro-Mechanical System) technology, it has been widely applied in the sensor field. Traditional MEMS piezoresistive pressure sensors, based on the piezoresistive effect of single-crystal silicon, typically use a Wheatstone bridge structure to convert external pressure signals into corresponding electrical signals. The magnitude of the external pressure signal can be determined by measuring the value of this electrical signal. However, this type of MEMS piezoresistive pressure sensor suffers from inaccurate detection. [Summary of the Invention]

[0004] This application provides a MEMS sensor and an electronic atomization device to solve the problem of inaccurate detection by MEMS sensors.

[0005] According to a first aspect of this application, some embodiments of this application provide a MEMS sensor, including a substrate, a base plate, a temperature sensing element, and conductive contacts; the substrate has opposing first and second surfaces; the first surface has a groove, and the second surface has a Wheatstone bridge circuit, the bridge arms of the Wheatstone bridge circuit including varistors; the base plate covers the groove to form a sealed cavity; the temperature sensing element is disposed on the inner surface of the sealed cavity; the conductive contacts are disposed on the substrate and / or the base plate and are electrically connected to the temperature sensing element; wherein the temperature sensing element has a temperature coefficient of resistance.

[0006] In some embodiments, the MEMS sensor further includes a force-applying element at least partially disposed on the bottom wall of the groove; the force-applying element is configured to apply a force toward or away from the substrate to the bottom wall of the groove when energized.

[0007] In some embodiments, the force-applying element is at least partially configured as the temperature-sensing element; the force-applying element includes a first electrode plate and a second electrode plate; the first electrode plate is disposed on the bottom wall of the groove; the second electrode plate is disposed on the substrate and spaced apart from the first electrode plate; the conductive contact is electrically connected to at least one of the first electrode plate and the second electrode plate; wherein the first electrode plate and the second electrode plate are configured to repel or attract each other when energized; the first electrode plate is a metal layer having a temperature coefficient of resistance and serves as the temperature-sensing element; the conductive contact includes a first conductive contact and a second conductive contact respectively electrically connected to the first electrode plate.

[0008] In some embodiments, the first electrode and the second electrode form a parallel plate capacitor, and the conductive contact further includes a third conductive contact electrically connected to the second electrode.

[0009] In some embodiments, the first electrode plate is disposed on the bottom surface of the groove; the second electrode plate is disposed on the surface of the substrate exposed to the sealing cavity; the substrate has a first conductive hole, a second conductive hole, and a third conductive hole; the first conductive contact is disposed on the surface of the substrate opposite to the substrate and is electrically connected to one end of the first electrode plate through the first conductive hole; the second conductive contact is disposed on the surface of the substrate opposite to the substrate and is electrically connected to the other end of the first electrode plate through the second conductive hole; and the third conductive contact is disposed on the surface of the substrate opposite to the substrate and is electrically connected to the second electrode plate through the third conductive hole.

[0010] In some embodiments, one of the first and second pole plates comprises a permanent magnet material, and the other is an electromagnet; the conductive contact is electrically connected to the electromagnet to change the polarity of the electromagnet; or both the first and second pole plates are electromagnets; the conductive contact is electrically connected to the first and second pole plates respectively to change the polarity of the electromagnet.

[0011] In some embodiments, the force-applying element includes a thermodeformable material layer and a conductive heating layer disposed on the bottom wall of the groove; the thermodeformable material layer is configured to deform under heating, thereby applying a force toward or away from the substrate to the bottom wall of the groove; wherein the conductive heating layer is a metal layer having a temperature coefficient of resistance and serves as the temperature sensing element; the conductive contact includes a first conductive contact and a second conductive contact respectively electrically connected to the conductive heating layer.

[0012] In some embodiments, the conductive heating layer is disposed between the thermally deformable material layer and the bottom wall of the groove.

[0013] In some embodiments, the conductive heating layer surrounds the thermally deformable material layer and is disposed on the bottom wall of the groove.

[0014] According to a second aspect of this application, some embodiments of this application provide an electronic atomization device, including a liquid storage unit, an atomization component, a MEMS sensor, and a control circuit; the liquid storage unit is used to store an aerosol generation matrix; the atomization component is used to atomize the aerosol generation matrix; the MEMS sensor is the MEMS sensor provided in any of the above embodiments, disposed on the airflow channel of the electronic atomization device, and used to detect air pressure changes in the airflow channel; the control circuit is electrically connected to the atomization component and the MEMS sensor respectively; the control circuit is used to control the operation of the atomization component according to the air pressure changes detected by the MEMS sensor; wherein, the control circuit is further used to compensate for the temperature drift of the MEMS sensor according to the temperature of the MEMS sensor detected by the temperature sensing element.

[0015] According to the MEMS sensor of the above embodiment, in the MEMS sensor 100 of this embodiment, the temperature sensing element is disposed on the inner surface of the sealed cavity, which can monitor the current operating temperature of the MEMS sensor in real time and compensate for the temperature drift of the MEMS sensor according to the current operating temperature of the MEMS sensor, thereby greatly eliminating the above-mentioned temperature drift phenomenon and improving the detection accuracy of the MEMS sensor of the embodiment. [Attached Image Description]

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 is a top view of a MEMS sensor provided in some embodiments of this application;

[0018] Figure 2 is a cross-sectional view along line II-II in Figure 1;

[0019] Figure 3 is a schematic diagram of the structure of a MEMS sensor provided in some other embodiments of this application;

[0020] Figure 4 is a schematic diagram of the structure of a MEMS sensor provided in some embodiments of this application;

[0021] Figure 5 is a schematic diagram of the structure of a MEMS sensor provided in some embodiments of this application;

[0022] Figure 6 is a schematic diagram of the structure of a MEMS sensor provided in some other embodiments of this application;

[0023] Figure 7 is a schematic diagram of the structure of a MEMS sensor provided in some embodiments of this application.

[0024] Figure 8 is a bottom view of the force-applying element 30 in Figure 7;

[0025] Figure 9 is a flowchart of a MEMS sensor fabrication method provided in some embodiments of this application;

[0026] Figure 10 is a flowchart of S10 in Figure 9;

[0027] Figure 11 is a flowchart of S30 in Figure 9;

[0028] Figure 12 is a flowchart of a MEMS sensor fabrication method provided in some other embodiments of this application;

[0029] Figure 13 is a schematic diagram of the structure of an electronic atomizing device provided in some embodiments of this application;

[0030] Figure 14 is a functional block diagram of the electronic atomizing device in Figure 13;

[0031] Figure 15 is a functional block diagram of an electronic atomizing device provided in some other embodiments of this application.

[0032] Reference numerals: 10-Substrate, 11-First surface, 12-Second surface, 13-Groove, 14-Wheatstone bridge circuit, 140-Varistor, 141- 142-Conductive region, 143-Heavily doped contact region, 144-Conductive lead, 15-Dielectric layer, 16-Passivation layer; 20-Substrate, 21-First conductive hole, 22-Second conductive hole, 23-Third conductive hole; 30-Force application element, 31-Temperature sensing element, 311-First lead, 312-Second lead, 32-Second electrode plate, 33-Thermosensitive material layer; 40-Conductive contact, 41-First conductive contact; 42-Second conductive contact; 43-Third conductive contact, 44-Fourth conductive contact; 50-First sealing ring; 60-Second sealing ring; 100-MEMS sensor; 200-Liquid storage component; 300-Atomization component; 400-Control circuit; 500-Power supply; 1000A-Liquid storage unit, 1000B-Control unit, 1000-Electronic atomization device.

Detailed Implementation Methods

[0033] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing description of the drawings, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that comprises a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such processes, methods, products, or apparatus.

[0035] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0036] In the description of the embodiments of this application, the technical terms "first," "second," "third," etc., are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more (including two), such as two, three, etc., unless otherwise explicitly defined. Similarly, "multiple sets" refers to two or more sets (including two sets), and "multiple pieces" refers to two or more pieces (including two pieces).

[0037] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0038] In the description of the embodiments of this application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicate the relative orientation or positional relationship between the components in a certain posture (as shown in the accompanying drawings) as shown in the drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0039] In the description of the embodiments of this application, unless otherwise expressly specified and limited, the technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0040] In recent years, with the rapid development of MEMS technology, it has been widely applied in the sensor field. Traditional MEMS sensors are based on the piezoresistive effect of single-crystal silicon and typically use a Wheatstone bridge structure to convert external pressure signals into corresponding electrical signals. The magnitude of the external pressure signal is obtained by measuring the value of this electrical signal.

[0041] However, the inventors of this application have also discovered that, since the performance of MEMS sensors is significantly affected by temperature, temperature compensation is typically required. The traditional method involves connecting a temperature signal conditioning chip externally to the MEMS sensor to perform temperature compensation and ensure measurement accuracy. However, this method cannot calibrate the actual internal operating temperature of the MEMS sensor, resulting in a discrepancy between the acquired temperature signal and the actual operating temperature. This leads to an inability to effectively address the temperature drift problem, thus resulting in inaccurate detection.

[0042] The inventors of this application have conducted in-depth research on the structure of MEMS sensors. The MEMS sensor provided in this application includes a substrate, a base plate, a temperature sensing element, and conductive contacts. The substrate has opposing first and second surfaces. The first surface has a groove, and the second surface has a Wheatstone bridge circuit, the bridge arms of which include varistors. The base plate covers the groove to form a sealed cavity. The temperature sensing element is disposed on the inner surface of the sealed cavity. The conductive contacts are disposed on the substrate and / or the base plate and are electrically connected to the temperature sensing element. The temperature sensing element has a temperature coefficient of resistance. In this way, the temperature drift of the MEMS sensor is accurately calibrated, achieving excellent linearity, high sensitivity, and effective suppression of temperature drift, thereby improving the detection accuracy of the MEMS sensor in this embodiment.

[0043] The present application will now be described in detail with reference to the accompanying drawings and embodiments.

[0044] Please refer to Figures 1 and 2. Figure 1 is a top view of a MEMS sensor provided in some embodiments of this application; Figure 2 is a cross-sectional view along line II-II in Figure 1.

[0045] The MEMS sensor 100 provided in this application embodiment includes a substrate 10, a base plate 20, a temperature sensing element 31, and a conductive contact 40.

[0046] In one embodiment, the substrate 10 can be made of silicon-based materials, such as a single-crystal silicon wafer. Single-crystal silicon wafers are a common substrate for semiconductor devices, on which metal layers can be deposited and metal ions can be doped to construct semiconductor devices. In another embodiment, the MEMS sensor 100 needs to have a rollable characteristic. In this case, polyacetamide (PI) can be selected as the substrate of the substrate 10, and a single-crystal silicon layer is deposited on it to fabricate the rollable MEMS sensor 100. This application uses a semiconductor substrate 10 as an example for illustration.

[0047] In some embodiments, the substrate 10 has a first surface 11 and a second surface 12 opposite to each other, and the distance between the first surface 11 and the second surface 12 is the thickness of the substrate 10. The first surface 11 has a groove 13, the cross-sectional shape of which is not limited along the thickness direction of the substrate 10, and can be, for example, square, rectangular, or trapezoidal, etc., and this application does not impose any specific limitations on it. The second surface 12 has a Wheatstone bridge circuit 14, the bridge arms of which include varistors 140.

[0048] In some embodiments, referring to FIG1, the Wheatstone bridge circuit 14 includes four sets of varistors 140. The varistors 140 can generate resistance changes in response to pressure changes applied to the substrate 10, thereby converting pressure signals into electrical signals. Each set of varistors 140 includes two parallel and spaced-apart sub-varistors 141. In one embodiment, the four sets of varistors 140 are arranged in the same direction, for example, the X direction in FIG1, and distributed at the four corners of the rhombus shown in FIG1. ​​In another embodiment, the four sets of varistors 140 are arranged in different directions. For example, two sets of varistors 140 are arranged in the X direction in FIG1, and the other two sets of varistors 140 are arranged along the Y direction. Optionally, in yet another embodiment, the four sets of varistors 140 are arranged in a rectangle (not shown), and the four sets of varistors 140 are arranged in the same direction.

[0049] In some embodiments, the Wheatstone bridge circuit 14 further includes four sets of conductive regions 142 for leading out electrical signals. In one embodiment, as shown in FIG1, the four sets of varistors 140 are respectively arranged in the middle of the substrate 10, and the four conductive regions 142 are respectively arranged around the four sets of varistors 140. In another embodiment, the four sets of varistors 140 are respectively arranged at the four corners of the substrate 10 (not shown), and the four conductive regions 142 are arranged in the middle of the substrate 10.

[0050] Furthermore, in some embodiments, the Wheatstone bridge circuit 14 further includes heavily doped contact regions 143 formed between the sub-varistors 141. The heavily doped contact regions 143 are used to electrically connect the sub-varistors 141 in the group of varistors 140. The heavily doped contact regions 143 are regions with conductive properties after semiconductor doping with metal ions. Referring to Figure 2, in some embodiments, the varistors 140 and the heavily doped contact regions 143 are formed on a substrate 10. A dielectric layer 15 is also covered on the substrate 10. Four sets of conductive regions 142 are formed on the dielectric layer 15. The dielectric layer 15 can serve as a protective layer and an insulating layer. The material of the dielectric layer 15 can be silicon dioxide or silicon nitride, etc. The dielectric layer 15 may have vias. The conductive regions 142 and their conductive leads 144 can be electrically connected to the varistors 140 through the vias in the dielectric layer 15. Optionally, the conductive leads 144 are made of at least one of copper, nickel-chromium alloy, iron, or platinum. Optionally, in some embodiments, the side of the dielectric layer 15 away from the substrate 10 is further covered with a passivation layer 16, and the four sets of conductive regions 142 are at least partially exposed on the passivation layer 16. The passivation layer 16 has a dense surface that can be used to resist moisture erosion and device oxidation, etc. The passivation layer 16 has hollowed-out areas corresponding to the positions of the conductive regions 142, so that the conductive regions 142 are exposed to the external environment to facilitate the extraction of electrical signals.

[0051] In some embodiments, the substrate 20 can be a glass substrate or a ceramic substrate, etc., and the substrate 20 can cover the groove 13 to form a sealed cavity. In one embodiment, the substrate 20 can be bonded to the substrate 10 to form a sealed cavity. Exemplarily, in some embodiments, the substrate 20 and the substrate 10 can be bonded together using metallic chromium under preset temperature and / or preset pressure conditions. The specific preset temperature and pressure need to be determined according to the bonding material and the actual equipment used, and will not be specifically described here. Those skilled in the art can understand the concept of this embodiment based on the above description. In other embodiments, the substrate 20 can be directly bonded to the substrate 10. Further, in some embodiments, a first sealing ring 50 is provided on the first surface 11 of the substrate 10, and a second sealing ring 60 is provided on the surface of the substrate 20 near the substrate 10. The first sealing ring 50 and the second sealing ring 60 are disposed opposite to each other, thereby enabling the substrate 10 and the substrate 20 to be bonded to form a sealed cavity.

[0052] The temperature sensing element 31 is disposed on the inner surface of the sealed cavity, which can be the bottom wall of the groove 13 or the surface of the substrate 20 near the substrate. The temperature sensing element 31 has a temperature coefficient of resistance (TCR), used to obtain the current operating temperature of the MEMS sensor in real time. The temperature sensing element 31 is electrically connected to the control circuit, enabling the control circuit to compensate for the temperature drift of the MEMS sensor 100 based on the current operating temperature of the MEMS sensor 100. The material of the temperature sensing element 31 can be platinum, nickel, or tungsten, etc., whose resistance value changes linearly with temperature. In some embodiments, the temperature sensing element 31 can be externally connected to a resistance sampling circuit through the conductive contact 40 to collect the resistance value of the temperature sensing element 31 in real time, thereby establishing a resistance-temperature mapping table, which allows the current operating temperature of the MEMS sensor 100 to be obtained in real time, thus achieving accurate calibration of the temperature drift of the MEMS sensor 100.

[0053] Specifically, in one embodiment, the relationship between compensation voltage and operating temperature can be established in advance. For example, in some embodiments, a formula for compensation voltage and operating temperature can be established to correct the algorithm of applied voltage and pressure, which is stored in the control circuit. When using the MEMS sensor 100, the voltage applied to the force-applying element 30 is controlled according to the algorithm. Alternatively, in other embodiments, a table of the relationship between compensation voltage and operating temperature can be established in advance and stored in the control circuit. When using the MEMS sensor 100, the corresponding compensation voltage is obtained according to the measured operating temperature, and then the compensation voltage is applied to the force-applying element 30. This can significantly eliminate the temperature drift phenomenon.

[0054] It should be noted that the MEMS sensor 100 in this embodiment is not limited to deriving and calculating the pressure value through the above-mentioned preset mapping relationship table. It can also provide different correction coefficients and correction formulas according to different operating temperatures. All of the above methods are in line with the inventive concept of this embodiment.

[0055] The conductive contact 40 is electrically connected to the temperature sensing element 31. The number of conductive contacts 40 is not limited, for example, it can be 1, 2, 3 or 4, etc. They can be disposed on the substrate 10 and / or the substrate 20. That is, they can all be disposed on the substrate 10, or all on the substrate 20, or partially disposed on the substrate 10 and the remaining part disposed on the substrate 20. Specifically, it can be designed according to the needs.

[0056] In one embodiment, the conductive contact 40 includes a first conductive contact 41 and a second conductive contact 42 spaced apart on the substrate 20. The substrate 20 has a first conductive hole 21 and a second conductive hole 22. The first conductive hole 21 is used to lead out a first lead 311, and the second conductive hole 22 is used to lead out a second lead 312. The first conductive contact 41 is electrically connected to one end of the temperature sensing element 31 through the first conductive hole 21 and the first lead 311. The second conductive contact 42 is electrically connected to the other end of the temperature sensing element 31 through the second conductive hole 22 and the second lead 312. In this way, the first lead 311 and the second lead 312 can be connected to an external resistance sampling circuit to form a detection circuit for detecting the resistance of the temperature sensing element 31. In some embodiments, the first conductive contact 41 and the second conductive contact 42 are formed by depositing the same material as the temperature sensing element 31 in the first conductive hole 21 and the second conductive hole 22, respectively. This can reduce contact resistance, reduce heat generation, and improve energy utilization.

[0057] Referring to Figure 2, in some embodiments, the MEMS sensor 100 further includes a force-applying element 30. The force-applying element 30 is at least partially configured as the aforementioned temperature-sensing element 31. The force-applying element 30 is at least partially disposed on the bottom wall of the groove 13. The force-applying element 30 is configured to apply a force close to or away from the substrate 20 to the bottom wall of the groove 13 when energized, to resist deformation (or "displacement") of the substrate 10 caused by airflow disturbance during use of the MEMS sensor 100. The force-applying element 30 being at least partially configured as the aforementioned temperature-sensing element 31 can be achieved by fabricating a portion or the entirety of the force-applying element 30 using a metallic material with a temperature coefficient of resistance.

[0058] Optionally, referring to Figures 3-5, in some embodiments, the force-applying element 30 includes a first electrode plate and a second electrode plate 32. The first electrode plate is a metal layer with a temperature coefficient of resistance and serves as a temperature sensing element 31, and is disposed on the bottom wall of the groove 13. The second electrode plate 32 is disposed on the substrate 20 and spaced apart from the first electrode plate. The conductive contact 40 is electrically connected to at least one of the first electrode plate and the second electrode plate 32, wherein the first electrode plate and the second electrode plate 32 are configured to repel or attract each other when energized. The basis for the first electrode plate and the second electrode plate 32 to repel or attract each other when energized can be the principle of like charges repelling and unlike charges attracting, as shown in Figure 3, or the principle of like charges repelling and unlike charges attracting, as shown in Figure 4.

[0059] In some embodiments, as shown in FIG3, the first electrode and the second electrode 32 form a parallel electrode capacitor. In one embodiment, the first electrode is disposed on the bottom surface of the groove 13, that is, on the surface of the groove 13 near the substrate 20; the second electrode 32 is disposed on the surface of the substrate 20 exposed to the sealed cavity, that is, on the surface of the substrate 20 near the substrate 10. When opposite charges are applied to the first electrode and the second electrode 32, according to the principle of attraction between opposite charges, they move closer to each other. In some embodiments of this application, the first electrode moves closer to the substrate 20 after being energized. In FIG3, the direction closer to the substrate 20 can be defined as the vertically downward direction, which is defined as the first direction. When the same charge is applied to the first electrode and the second electrode 32, according to the principle of repulsion between like charges, they move away from each other. In some embodiments of this application, the first electrode moves away from the substrate 20 after being energized. In FIG3, the direction away from the substrate 20 can be defined as the vertically upward direction, which is defined as the second direction. This will be used as an example in subsequent embodiments.

[0060] In some embodiments, the first electrode plate can be made of materials such as platinum, nickel, tungsten, etc., which are suitable as thermocouples and capacitor plates. Platinum is a good thermistor, and its resistance value changes linearly with temperature. The second electrode plate 32 can also be made of materials such as gold, platinum, nickel, copper, tin oxide, manganese oxide, etc., which are suitable as capacitor plates.

[0061] Furthermore, the conductive contact 40 includes a first conductive contact 41 and a second conductive contact 42 electrically connected to the first electrode plate, and a third conductive contact 43 electrically connected to the second electrode plate 32. In some embodiments, the material of the third conductive contact 43 is the same as that of the second electrode plate 32, which can reduce contact resistance, reduce heat generation, and improve energy utilization. Optionally, in other embodiments, the material of the third conductive contact 43 may be different from that of the second electrode plate 32.

[0062] Referring to Figure 3, the substrate 20 has a first conductive hole 21, a second conductive hole 22, and a third conductive hole 23. In one embodiment, a first conductive contact 41 is disposed on the surface of the substrate 20 opposite to the substrate 10 and is electrically connected to one end of the first electrode plate through the first conductive hole 21; a second conductive contact 42 is disposed on the surface of the substrate 20 opposite to the substrate 10 and is electrically connected to the other end of the first electrode plate through the second conductive hole 22; and a third conductive contact 43 is disposed on the surface of the substrate 20 opposite to the substrate 10 and is electrically connected to the second electrode plate 32 through the third conductive hole 23. Optionally, the first conductive hole 21, the second conductive hole 22, and the third conductive hole 23 can also be disposed on the substrate 10, and can be specifically designed as needed. In one embodiment, a first lead 311 and a second lead 312 are connected to both sides of the first electrode plate. The same material as the first lead 311 and the second lead 312 is deposited in the first conductive hole 21 and the second conductive hole 22 to form a first conductive contact 41 and a second conductive contact 42. The same material as the second electrode plate 32 is deposited in the third conductive hole 23 to form a third conductive contact 43.

[0063] The pressure compensation principle of the MEMS sensor 100 in the above embodiments of this application is described below:

[0064] Strain membrane: The area of ​​the bottom wall of the sealed cavity projected along the second direction onto the substrate 10 together forms a strain membrane. In some embodiments, the strain membrane includes at least the substrate 10 and the first electrode plate.

[0065] When the strain gauge is subjected to pressure along the first direction, it also displaces along the first direction. At this time, a DC voltage can be applied to the first and second plates 32 respectively, making the charges on the first and second plates 32 the same, for example, both positive or both negative. This causes the first and second plates 32 to repel each other, causing the strain gauge to displace along the second direction, thereby compensating for the strain gauge deflection and reducing its impact on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be at its initial value, for example, zero, meaning the pressure on the strain gauge in the first direction cancels out the deformation force generated by the heating, the magnitude of the applied pressure along the first direction can be calculated based on the input voltage.

[0066] Optionally, when the strain membrane is subjected to pressure along the second direction, it also displaces along the second direction. At this time, a DC voltage can be applied to the first and second plates 32 respectively, such that the charges on the first plate and the second plate 32 are opposite. For example, the charge on the first plate is positive and the charge on the second plate 32 is negative, or vice versa. This causes the first and second plates 32 to attract each other, resulting in displacement of the strain membrane along the first direction. This compensates for the strain membrane's deflection, reducing its deflection and minimizing its impact on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be at its initial value, for example, zero, meaning the pressure on the strain membrane in the first direction cancels out the deformation force generated by the heating, the magnitude of the applied pressure in the first direction can be calculated based on the input voltage.

[0067] Optionally, referring to Figures 4 and 5, in some other embodiments, one of the first and second pole plates 32 includes a permanent magnet material, and the other is an electromagnet; the conductive contact 40 is electrically connected to the electromagnet to change the polarity of the electromagnet. Specifically, the polarity of the permanent magnet material is fixed. In this embodiment, the polarity of the permanent magnet material near the electromagnet is described as N pole. The magnetism of the electromagnet near the permanent magnet material can be determined by Ampere's rule. Therefore, the polarity of the electromagnet can be changed by changing the direction of the current in the electromagnet. When the magnetism of the electromagnet near the permanent magnet material is N pole, the first and second pole plates 32 repel each other. When the magnetism of the electromagnet near the permanent magnet material is S pole, the first and second pole plates 32 attract each other.

[0068] Referring to Figure 4, in one embodiment, the first electrode plate is a permanent magnet material, the second electrode plate 32 is an electromagnet, and the conductive contact 40 includes two spaced-apart first conductive contacts 41 and second conductive contacts 42, as well as two spaced-apart third conductive contacts 43 and fourth conductive contacts 44. The third conductive contacts 43 and fourth conductive contacts 44 are electrically connected to the second electrode plate 32 and are used to apply a DC voltage to the second electrode plate 32 to change its polarity. Correspondingly, the substrate 20 has two spaced-apart first conductive holes 21 and second conductive holes 22, as well as two spaced-apart third conductive holes 23 and fourth conductive holes 24. The same material as the second electrode plate 32 can be deposited in the third conductive holes 23 and fourth conductive holes 24 to form the third conductive contacts 43 and fourth conductive contacts 44, respectively.

[0069] Referring to Figure 5, in another embodiment, the first electrode plate is an electromagnet, the second electrode plate 32 is a permanent magnet, and the conductive contact 40 may only include a first conductive contact 41 and a second conductive contact 42 spaced apart. The first conductive contact 41 is electrically connected to the first electrode plate via a first lead 311, and the second conductive contact 42 is electrically connected to the first electrode plate via a second lead 312, used to apply a DC voltage to the first electrode plate to change its polarity. Correspondingly, the substrate 20 may only have a first conductive hole 21 and a second conductive hole 22 spaced apart. The first conductive hole 21 is used to lead out the corresponding first lead 311, and the second conductive hole 22 is used to lead out the second lead 312. In this embodiment, setting the second electrode plate 32 on the substrate 20 as an electromagnet eliminates the need for leads to be arranged on the second electrode plate 32, resulting in a simple structure and easy fabrication.

[0070] Optionally, in some other embodiments, both the first and second pole plates 32 are electromagnets; conductive contacts 40 are electrically connected to the first and second pole plates 32 respectively, for changing the polarity of the electromagnet, as shown in Figure 4. The first conductive contact 41 and the second conductive contact 42 are electrically connected to the first pole plate via first leads 311 and second leads 312, for applying a DC voltage to the first pole plate to change its polarity; the third conductive contact 43 and the fourth conductive contact 44 are electrically connected to the second pole plate 32, for applying a DC voltage to the second pole plate 32 to change its polarity. In this embodiment, the permanent magnet material and / or the electromagnet are inexpensive and readily available.

[0071] Optionally, referring to Figures 6-8, in some embodiments, the force-applying element 30 may include a thermodeformable material layer 33 and a conductive heating layer disposed on the bottom wall of the groove 13. The thermodeformable material layer 33 is configured to deform under heating, thereby applying a force to the bottom wall of the groove 13 towards or away from the substrate 20. The conductive heating layer is a metal layer with a temperature coefficient of resistance and serves as a temperature sensing element 31. Its material can be metal, carbon material, or polymer material; this application does not impose specific limitations on this. The conductive contact 40 includes a first conductive contact 41 and a second conductive contact 42, respectively electrically connected to the conductive heating layer, so that the conductive heating layer heats up after being energized, and then transfers the heat to the thermodeformable material layer 33 to cause it to deform. The thermodeformable material layer 33 can be an insulating material or a conductive material, with a wider range of options. Optionally, the first conductive contact 41 is electrically connected to one end of the conductive heating layer through the first conductive hole 21 and the first lead 311, and the second conductive contact 42 is electrically connected to the other end of the conductive heating layer through the second conductive hole 22 and the second lead 312.

[0072] In some embodiments, as shown in Figure 6, the conductive heating layer and the thermoplastic material layer 33 are stacked. For example, the conductive heating layer is disposed between the thermoplastic material layer 33 and the bottom wall of the groove 13. The conductive heating layer can transfer heat from the contact surface to the thermoplastic material layer 33; the larger the contact surface, the faster the heat transfer. In other embodiments, as shown in Figures 7 and 8, the conductive heating layer surrounds the thermoplastic material layer 33 and is disposed on the bottom wall of the groove 13. The heat from the conductive heating layer can be transferred inward from the circumference of the thermoplastic material layer 33. This heat transfer method allows for more uniform heat distribution.

[0073] Optionally, in some embodiments, the thermodeformable material layer 33 and the conductive heating layer can be made of the same material, such as a thermotropic material layer, which can deform when energized. In other embodiments, the thermotropic material layer 33 and the conductive heating layer can be replaced with an electrotropic material layer, in which a DC voltage is applied to both ends of the electrotropic material layer, causing the electrotropic material layer to stretch in a third direction perpendicular to the first direction due to the energization. Since the electrotropic material layer is suspended in the area corresponding to the sealed cavity, when the electrotropic material layer stretches horizontally, a force along the first or second direction will be generated in the suspended area in the middle.

[0074] The pressure compensation principle of the MEMS sensor 100 in the above embodiments of this application is described below:

[0075] When the strain membrane is subjected to pressure along the first direction, it also displaces along the first direction. At this time, a DC voltage can be applied to both ends of the thermo-deformable material layer, causing the thermo-deformable material layer to heat up and displace the strain membrane along the second direction, thereby compensating for the deflection of the strain membrane and reducing its deflection, thus reducing the influence of the strain membrane deflection on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be the initial value, for example, zero, that is, the pressure on the strain membrane in the first direction cancels out the deformation force after energization, the magnitude of the applied pressure along the first direction can be calculated based on the magnitude of the input voltage.

[0076] Optionally, when the strain membrane is subjected to pressure along the second direction, it also displaces along the second direction. At this time, a DC voltage can be applied to both ends of the thermally deformable material layer, causing the thermally deformable material layer to heat up and displace the strain membrane along the first direction, thereby compensating for the strain membrane's deflection and reducing its influence on the linearity of the test results. When the output voltage of the Wheatstone bridge circuit 14 is detected to be at its initial value, for example, zero, meaning the pressure in the second direction on the strain membrane cancels out the deformation force after energization, the magnitude of the applied pressure in the second direction can be calculated based on the input voltage.

[0077] In this embodiment, a heat-deformable material layer is provided on the bottom wall of the sealed cavity (i.e., the bottom wall of the groove 13). By compensating for the pressure inside and outside the sealed cavity, the external pressure is tested. The strain membrane has a smaller deflection and higher linearity. By monitoring the output voltage of the Wheatstone bridge circuit 14 as an initial value, such as zero, the pressure is tested. The pressure test can be visualized at the moment when the output voltage of the Wheatstone bridge circuit 14 is zero, which has higher sensitivity.

[0078] In some embodiments, the thermal deformation material layer and the conductive heating layer can also be used as the first electrode plate. In this embodiment, electrothermal deformation and electrostatic displacement can be reflected in the same MEMS sensor 100.

[0079] Please also refer to Figure 9, which is a flowchart of the fabrication method of the MEMS sensor 100 provided in some embodiments of this application. The fabrication method of the MEMS sensor 100 provided in the embodiments of this application includes:

[0080] S10: A substrate 10 is provided, the substrate 10 having opposing first surfaces 11 and second surfaces 12, a Wheatstone bridge circuit 14 is formed on the second surface 12;

[0081] Wherein, substrate 10 is a semiconductor substrate 10, such as an SOI silicon wafer. Referring to Figure 10, step S10 may include:

[0082] S11: Four sets of varistors 140 are formed on the second surface 12 of the substrate 10;

[0083] The varistor 140 responds to pressure changes applied to the substrate 10 by generating a resistance change, thereby converting the pressure signal into an electrical signal. In some embodiments, each group of varistors 140 includes two parallel and spaced-apart sub-varistors 141. Further, in one embodiment, step S11 further includes forming a heavily doped contact region 143 on the second surface 12 of the substrate 10. The heavily doped contact region 143 may be formed between the sub-varistors 141 for electrically connecting the sub-varistors 141 in the group of varistors 140. The heavily doped contact region 143 is a region that has conductive properties after the semiconductor is doped with metal ions.

[0084] S12: A dielectric layer 15 is formed on the second surface 12 of the substrate 10, and a via is formed in the dielectric layer 15;

[0085] The via is positioned to expose the varistor 140.

[0086] S13: Conductive leads 144 and conductive regions 142 are formed on the dielectric layer 15;

[0087] S14: A passivation layer 16 is formed on the dielectric layer 15, and the passivation layer 16 is patterned to expose the conductive region 142;

[0088] S20: A groove 13 is formed on the first surface 11 of the substrate 10, and a temperature sensing element 31 is disposed on the bottom wall of the groove 13;

[0089] The method of forming the groove 13 is not limited. For example, the groove 13 can be formed by etching, solution corrosion, or mechanical cutting. The method of forming the temperature sensing element 31 can be selected according to its material, and this application does not impose specific limitations. Step S20 may further include: forming a first lead 311 at the first end of the temperature sensing element 31, and forming a second lead 312 at the second end of the temperature sensing element 31 opposite to the first end.

[0090] S30: A substrate 20 is provided, and the substrate 20 is used to cover the groove 13 to form a sealed cavity.

[0091] Please refer to Figure 11. Step S30 includes:

[0092] S31: A first sealing ring 50 is formed on the outer periphery of the first surface 11 of the substrate 10;

[0093] The first sealing ring can be made of materials such as chromium, aluminum, copper or gold, and can be formed by sputtering and photolithography.

[0094] S32: A first conductive hole 21 and a second conductive hole 22 are formed on the substrate 20 at intervals, and a first lead 311 extends out of the first conductive hole 21 to form a first conductive contact 41, and a second lead 312 extends out of the second conductive hole 22 to form a second conductive contact 42.

[0095] S33: A second sealing ring 60 is formed on the outer periphery of one side of the substrate 20;

[0096] The first conductive hole 21 and the second conductive hole 22 can be formed by burning the substrate 20 using the TGV process.

[0097] S34: Align and bond the first sealing ring 50 and the second sealing ring 60 to make the first lead 311 and the first conductive contact 41 electrically connected, the second lead 312 and the second conductive contact 42 electrically connected, and make the groove 13 form a sealed cavity.

[0098] In an embodiment where the second electrode plate 32 is provided, step S30 further includes: forming a third conductive hole 23 on the substrate 20, and forming a second electrode plate 32 at a position corresponding to the third conductive hole 23; the material of the second electrode plate 32 extends out of the third conductive hole 23 to form a third conductive contact 43.

[0099] Step S30 may further include cleaning the substrate 20 to make the substrate 20 bond more tightly to the substrate 10.

[0100] Optionally, please also refer to Figure 12, a flowchart of a method for fabricating a MEMS sensor provided in other embodiments of this application, the method including:

[0101] S101: A varistor 140 and a heavily doped contact region 143 are formed on the second surface 12 of the substrate 10;

[0102] S102: A dielectric layer 15 is formed on the second surface 12 of the substrate 10, and a via is formed on the dielectric layer 15, with the via position corresponding to the position of the varistor 140; a conductive lead 144 is formed on the dielectric layer 15, and a conductive region 142 is formed at the end of the conductive lead 144.

[0103] S103: A passivation layer 16 is formed on the dielectric layer 15, and a via is formed in the passivation layer 16 at the position corresponding to the conductive region 142, so that the conductive region 142 is exposed.

[0104] S104: A groove 13 is formed on the first surface 11 of the substrate 10, and a temperature sensing element 31 and a first lead 311 and a second lead 312 electrically connected to the temperature sensing element 31 are disposed on the bottom wall of the groove 13; a first sealing ring 50 is formed on the outer periphery of the first surface 11 of the substrate 10.

[0105] S105: Provide a substrate 20, and form a first conductive hole 21 and a second conductive hole 22 on the substrate 20;

[0106] S106: A first conductive contact 41 is formed at the first conductive hole 21, a second conductive contact 42 is formed at the second conductive hole 22, and a second sealing ring 60 is formed on the outer periphery of the substrate 20.

[0107] S107: The substrate 10 and the base plate 20 are bonded together by the first sealing ring 50 and the second sealing ring 60.

[0108] The MEMS sensor 100 provided in the above embodiments of this application realizes the testing of external pressure by compensating for the pressure inside and outside the cavity. The strain membrane has a small deflection and higher linearity. The pressure is tested by monitoring the moment when the output voltage of the Wheatstone bridge circuit 14 is zero. The pressure test can be visualized at the moment when the output voltage of the Wheatstone bridge circuit 14 is zero, which has higher sensitivity.

[0109] It should be noted that the position, material, size, function, etc. of each layer structure involved in the fabrication method of the MEMS sensor 100 described above in this application can be the same as those in the embodiments of the MEMS sensor 100 described above in this application. For details, please refer to the above embodiments, which will not be repeated here.

[0110] The following describes an exemplary embodiment of the application of the MEMS sensor 100 in an electronic atomization device.

[0111] Please refer to Figures 13 and 14 together. Figure 13 shows an electronic atomizing device provided in some embodiments of this application; Figure 14 is a functional block diagram of the electronic atomizing device in Figure 13.

[0112] The electronic atomizing device 1000 provided in this application embodiment includes a liquid storage unit 1000A and a control unit 1000B; the liquid storage unit 1000A includes a liquid storage component 200 and an atomizing component 300; the control unit 1000B includes a MEMS sensor 100 and a control circuit 400. In some embodiments, please refer to FIG15 as well, the control unit 1000B also includes a power supply 500.

[0113] In some embodiments, the liquid storage component 200 is used to store the aerosol generating matrix. The aerosol generating matrix can be a solid matrix or liquid substance of plant leaves with specific aromas or substances, which can generate aerosols for users to inhale under heating without combustion. The electronic atomizing device 1000 of this application can be used in various fields, such as medical, cosmetic, or recreational inhalation. The liquid storage component 200 has an aerosol inlet end and an aerosol outlet end.

[0114] The atomizing component 300 is positioned in the airflow path from the inlet to the outlet and is in fluid communication with the liquid storage component 200. It is used to atomize the aerosol generation matrix from the liquid storage component 200. The atomizing component 300 can generate aerosols in any way, such as by ultrasonic vibration or heating to atomize the aerosol generation matrix.

[0115] The MEMS sensor 100 is the MEMS sensor 100 provided in any of the above embodiments. The MEMS sensor 100 is disposed on the airflow channel of the electronic atomizing device 1000, for example, upstream of the atomizing component 300, and is used to detect changes in air pressure within the airflow channel. In this embodiment, the MEMS sensor 100 can serve as an airflow start switch. When a user inhales from the electronic atomizing device 1000, the MEMS sensor 100 can detect the user's inhalation action and output a control signal to the control circuit 400, thereby driving the control circuit to output voltage to the atomizing component 300.

[0116] The power supply 500 can be electrically connected to the control circuit 400 to provide voltage to the atomizing assembly 300 and the MEMS sensor 100. The power supply 500 can be a rechargeable battery cell or a replaceable disposable battery cell, etc.

[0117] The control circuit 400 is electrically connected to the atomizing component 300 and the MEMS sensor 100 respectively. It is used to control the operation of the atomizing component 300 according to the air pressure change in the airflow channel detected by the MEMS sensor 100. For example, it can apply an electrical signal to the force application element 30 to apply a force close to or away from the substrate 20 to the bottom wall of the groove 13, so that the change in the output voltage of the MEMS sensor 100 is less than or equal to a preset threshold, thereby compensating for the drift of the resistance value of the pressure-sensitive resistor 140 and the pressure relationship caused by the pressure deformation of the substrate 10.

[0118] It is understandable that changes in air pressure within the airflow channel will cause changes in the resistance of the pressure-sensitive resistor 140, thereby causing changes in the output voltage Vout of the MEMS sensor 100. The amount of change in the output voltage Vout of the MEMS sensor 100 reflects the magnitude of the air pressure within the airflow channel, i.e., the magnitude of the pressure experienced by the MEMS sensor 100. When the pressure experienced by the MEMS sensor 100 exceeds a certain value, i.e., when the change in the output voltage Vout of the MEMS sensor 100 exceeds a preset threshold, the substrate 10 undergoes compressive deformation, causing a drift in the relationship between the resistance of the pressure-sensitive resistor 140 and the pressure. By applying a voltage to the force-applying element 30 (or the temperature-regulating element 31), the drift in the relationship between the resistance of the pressure-sensitive resistor 140 and the pressure caused by the compressive deformation of the substrate 10 is compensated when the change in the output voltage Vout of the MEMS sensor 100 is less than or equal to the preset threshold. The preset threshold, which is the amount of change in the output voltage Vout corresponding to the drift in the relationship between the resistance of the pressure-sensitive resistor 140 and the pressure caused by the compressive deformation of the substrate 10, can be obtained in advance through experiments.

[0119] The control circuit 400 can also be used to compensate for the temperature drift of the MEMS sensor 100 based on the temperature of the MEMS sensor 100 detected by the temperature sensing element 31.

[0120] In some embodiments, the control circuit 400 is further configured to detect whether the force applied by the force-applying element 30 to the bottom wall of the groove 13 counteracts the deformation of the bottom wall of the groove 13 caused by air pressure, and when it is detected that the force applied by the force-applying element 30 to the bottom wall of the groove 13 counteracts the deformation of the bottom wall of the groove 13 caused by air pressure, determine the magnitude of the air pressure based on the electrical signal applied to the force-applying element 30. The control circuit 400 is also configured to control the atomizing assembly 300 to operate based on the magnitude of the air pressure detected by the MEMS sensor 100.

[0121] Specifically, with the preset threshold set to 0, the control circuit 400 can detect whether the change in the output voltage of the MEMS sensor 100 is 0, and when the change in the output voltage Vout of the MEMS sensor 100 is detected to be 0, it determines the magnitude of the air pressure based on the electrical signal applied to the force application element 30 (or the temperature element 31). When the change in the output voltage Vout of the MEMS sensor 100 is detected to be 0, that is, the output voltage Vout of the MEMS sensor 100 returns to its initial value.

[0122] In some embodiments, the initial value of the output voltage Vout of the MEMS sensor 100 is 0. When the MEMS sensor 100 deforms due to air pressure, a voltage Vx is applied to the force-applying element 30 to compensate for the deformation, so that the output voltage Vout of the MEMS sensor 100 returns to 0 after compensation (i.e., the change in output voltage Vout is 0). When the voltage Vx applied to the force-applying element 30 is not 0, it is determined that the force exerted by the force-applying element 30 on the bottom wall of the groove 13 caused by the voltage Vx compensates for the deformation of the bottom wall of the groove 13 caused by the air pressure in the airflow channel. Thus, the air pressure can be obtained based on the value of Vx. Of course, the initial value of the output voltage Vout of the MEMS sensor 100 can also be set to other values, such as 1V, 2V, 3V, or 4V, etc., and this application does not impose specific limitations. The embodiments of this application are described with an initial value of 0.

[0123] The working principle of the MEMS sensor 100 in this embodiment will be explained below in conjunction with the user's inhalation process of the electronic atomizing device 1000:

[0124] When the user begins suction, the MEMS sensor 100 is subjected to pressure in the second direction, causing the substrate 10 to deform along this direction. Since the Wheatstone bridge circuit 14 includes a piezoresistive resistor 140, the change in the resistance of the piezoresistive resistor 140 causes a change in the output voltage Vout of the Wheatstone bridge circuit 14. Based on this change in output voltage Vout, the user's suction action can be detected. When the substrate 10 displaces along the second direction, a voltage is applied to the temperature sensing element 31, causing it to heat up and displace along the first direction. This counteracts the displacement along the second direction caused by airflow fluctuations, thus returning the output voltage Vout of the Wheatstone bridge circuit 14 to its initial value, for example, 0.

[0125] When the user blows air or inhales, causing airflow fluctuations, positive pressure may be generated inside the electronic atomizing device 1000. Therefore, in addition to displacement in the second direction, the substrate 10 may also be displaced along the first direction.

[0126] When the substrate 10 is subjected to pressure (blowing or airflow fluctuation) in the first direction, causing displacement in the first direction, the change in the resistance of the varistor 140 causes a change in the output voltage Vout of the Wheatstone bridge circuit 14. Based on the change in the output voltage Vout, the change in air pressure can be detected. Therefore, a voltage is applied across the temperature sensing element 31, causing the temperature sensing element 31 to be energized and heated, which in turn causes the temperature sensing element 31 and the substrate 10 to produce displacement in the second direction, thereby canceling the displacement in the first direction caused by the pressure in the first direction. When the displacement in the first direction and the displacement in the second direction are completely canceled out, the output voltage Vout of the Wheatstone bridge circuit 14 returns to its initial value of 0.

[0127] Therefore, depending on the setting position of the MEMS sensor 100 in this embodiment, it can sensitively detect pressure in any set first and second directions. Compared with the piezoresistive sensors of related technologies, it not only has higher accuracy but also a wider range of applications.

[0128] In the electronic atomization device 1000 of this embodiment, the temperature sensing element 31 is disposed on the inner surface of the sealed cavity, which can monitor the current operating temperature of the MEMS sensor in real time and compensate for the temperature drift of the MEMS sensor according to the current operating temperature of the MEMS sensor, thereby greatly eliminating the aforementioned temperature drift phenomenon. In addition, when the MEMS sensor 100 is subjected to pressure in the second direction, a voltage can be applied to the force-applying element 30 to cause the strain film to displace in the first direction, thereby offsetting the displacement of the strain film in the second direction caused by suction. When subjected to pressure in the first direction, a DC voltage can be applied to the force-applying element 30 to cause the strain film to displace in the second direction, thereby offsetting the displacement of the strain film in the first direction caused by airflow fluctuation. Therefore, the deflection of the strain film is always small throughout the entire use process, thereby improving the problem that the deformation of the substrate 10 does not change in an ideal linear manner with the pressure, thereby improving the detection accuracy of the MEMS sensor 100 of this application embodiment. The MEMS sensor provided in this application can be designed with integrated temperature and pressure, making it smaller in size compared with devices with the same function, which is beneficial for miniaturization.

[0129] Furthermore, condensate is easily formed in the airflow channel of the electronic atomizing device 1000; since the temperature sensing element 31 is sealed in the groove 13, the chance of the temperature sensing element 31 being corroded or contaminated by the condensate can be reduced.

[0130] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between apparatuses or units, and may be electrical, mechanical, or other forms.

[0131] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0132] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A MEMS sensor, characterized in that, include: A substrate having opposing first and second surfaces; the first surface having a groove, and the second surface having a Wheatstone bridge circuit, the bridge arms of the Wheatstone bridge circuit including varistors; A substrate is used to cover the groove to form a sealed cavity; A temperature sensing element is disposed on the inner surface of the sealed cavity; Conductive contacts are disposed on the substrate and / or the base plate and are electrically connected to the temperature sensing element; The temperature sensing element has a resistance temperature coefficient.

2. The MEMS sensor according to claim 1, characterized in that, The MEMS sensor further includes a force-applying element, which is at least partially disposed on the bottom wall of the groove; the force-applying element is configured to apply a force toward or away from the substrate to the bottom wall of the groove when energized.

3. The MEMS sensor according to claim 2, characterized in that, The force-applying element is at least partially configured as the temperature-sensing element; The force-applying element includes a first electrode plate and a second electrode plate; the first electrode plate is disposed on the bottom wall of the groove; the second electrode plate is disposed on the substrate and spaced apart from the first electrode plate; the conductive contact is electrically connected to at least one of the first electrode plate and the second electrode plate; wherein the first electrode plate and the second electrode plate are configured to repel or attract each other when energized. The first electrode plate is a metal layer with a temperature coefficient of resistance and serves as the temperature sensing element; the conductive contact includes a first conductive contact and a second conductive contact that are electrically connected to the first electrode plate.

4. The MEMS sensor according to claim 3, characterized in that, The first electrode and the second electrode form a parallel electrode capacitor, and the conductive contact further includes a third conductive contact electrically connected to the second electrode.

5. The MEMS sensor according to claim 4, characterized in that, The first electrode plate is disposed on the bottom surface of the groove; the second electrode plate is disposed on the surface of the substrate exposed to the sealed cavity; the substrate has a first conductive hole, a second conductive hole and a third conductive hole; the first conductive contact is disposed on the surface of the substrate away from the substrate and is electrically connected to one end of the first electrode plate through the first conductive hole; the second conductive contact is disposed on the surface of the substrate away from the substrate and is electrically connected to the other end of the first electrode plate through the second conductive hole; the third conductive contact is disposed on the surface of the substrate away from the substrate and is electrically connected to the second electrode plate through the third conductive hole.

6. The MEMS sensor according to claim 3, characterized in that, One of the first and second electrode plates comprises a permanent magnet material, and the other is an electromagnet; the conductive contact is electrically connected to the electromagnet to change the polarity of the electromagnet; or Both the first electrode plate and the second electrode plate are electromagnets; The conductive contacts are electrically connected to the first electrode plate and the second electrode plate respectively, and are used to change the polarity of the electromagnet.

7. The MEMS sensor according to claim 2, characterized in that, The force-applying element includes a thermo-deformable material layer and a conductive heating layer disposed on the bottom wall of the groove; the thermo-deformable material layer is configured to deform under heating, thereby applying a force to the bottom wall of the groove toward or away from the substrate; The conductive heating layer is a metal layer with a temperature coefficient of resistance and serves as the temperature sensing element; the conductive contacts include a first conductive contact and a second conductive contact that are electrically connected to the conductive heating layer.

8. The MEMS sensor according to claim 7, characterized in that, The conductive heating layer is disposed between the thermally deformable material layer and the bottom wall of the groove.

9. The MEMS sensor according to claim 7, characterized in that, The conductive heating layer surrounds the thermally deformable material layer and is disposed on the bottom wall of the groove.

10. The MEMS sensor according to claim 1, characterized in that, The Wheatstone bridge circuit includes four sets of varistors and four sets of conductive regions. The varistors generate resistance changes in response to pressure changes applied to the substrate, thereby converting the pressure signal into an electrical signal. The conductive regions are used to lead out the electrical signal.

11. The MEMS sensor according to claim 10, characterized in that, The substrate is a semiconductor substrate; each group of varistors includes two parallel and spaced sub-varistors, and a heavily doped contact region formed between the sub-varistors, the heavily doped contact region being used to electrically connect the two parallel and spaced sub-varistors.

12. The MEMS sensor according to claim 10, characterized in that, The piezoresistor is formed on the substrate, and the MEMS sensor also includes... A dielectric layer covering the substrate and the varistor; The four sets of conductive regions are formed on the dielectric layer.

13. The MEMS sensor according to claim 12, characterized in that, The dielectric layer is further covered with a passivation layer on the side away from the substrate, and the four sets of conductive regions are at least partially exposed in the passivation layer.

14. A MEMS sensor, characterized in that, include: A substrate having opposing first and second surfaces; the first surface having a groove, and the second surface having a Wheatstone bridge circuit, the bridge arms of the Wheatstone bridge circuit including varistors; A substrate is used to cover the groove to form a sealed cavity; A force-applying element is at least partially disposed on the bottom wall of the groove; the force-applying element is configured to apply a force toward or away from the substrate to the bottom wall of the groove when energized. Conductive contacts are disposed on the substrate and / or the base plate and are electrically connected to the force-applying element; The force-applying element is at least partially configured as a temperature-sensing element, which is disposed on the inner surface of the sealed cavity. The temperature-sensing element has a temperature coefficient of resistance. The force-applying element is configured to apply a force toward or away from the substrate to the bottom wall of the groove when energized.

15. The MEMS sensor according to claim 14, characterized in that, A first sealing ring is provided on the first surface of the substrate, and a second sealing ring is provided on the surface of the substrate near the substrate. The first sealing ring and the second sealing ring are arranged opposite to each other so that the substrate and the substrate are bonded to form the sealing cavity.

16. The MEMS sensor according to claim 14, characterized in that, The temperature sensing element is made of at least one of platinum, nickel, or tungsten.

17. An electronic atomizing device, characterized in that, include: Liquid storage unit for storing aerosol generation matrix; Atomizing component for atomizing the aerosol generating matrix; The MEMS sensor according to any one of claims 1-16 is disposed on the airflow channel of the electronic atomization device for detecting air pressure changes within the airflow channel; A control circuit is electrically connected to both the atomizing component and the MEMS sensor; the control circuit is used to control the operation of the atomizing component based on the air pressure changes detected by the MEMS sensor. The control circuit is further configured to compensate for the temperature drift of the MEMS sensor based on the temperature detected by the temperature sensing element.

18. The electronic atomizing device according to claim 17, characterized in that, Also includes: A power source is provided to supply voltage to the atomizing assembly and the MEMS sensor.

19. The electronic atomizing device according to claim 17, characterized in that, The control circuit is also used to apply an electrical signal to the force-applying element based on the change in output voltage caused by the change in air pressure of the MEMS sensor in the airflow channel. The electrical signal is used to enable the force-applying element to apply a force toward or away from the substrate to the bottom wall of the groove.

20. The electronic atomizing device according to claim 19, characterized in that, The change in the output voltage of the MEMS sensor is less than or equal to a preset threshold. The control circuit is also used to detect whether the change in the output voltage of the MEMS sensor is equal to the preset threshold. And when the change in the output voltage of the MEMS sensor is detected to be equal to the preset threshold, the magnitude of the air pressure is determined based on the electrical signal applied to the force-applying element.

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