Back-contact solar cell, battery assembly, and photovoltaic system

By setting a passivation contact structure with a dielectric layer and a third doped polycrystalline silicon layer in the back contact solar cell, the problems of poor back passivation effect and poor metal electrode isolation are solved, thereby improving the efficiency and reliability of the cell.

WO2026011881A1PCT designated stage Publication Date: 2026-01-15ZHUHAI FUSHAN AIKO SOLAR ENERGY TECH CO LTD +4
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Patent Information

Application Number
PCT/CN2025/089615
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-07-09
Filing Date
2025-04-17
Publication Date
2026-01-15

AI Technical Summary

Technical Problem

Existing back-contact solar cells have poor back-side passivation and inadequate isolation between the metal electrodes in the P and N regions, resulting in low cell efficiency and a high risk of short circuits.

Method used

A dielectric layer is disposed on the back side of the first doped polycrystalline silicon layer of the back contact solar cell, and a third doped polycrystalline silicon layer is disposed on the back side of the dielectric layer to form a passivation contact structure. The thickness of the third doped polycrystalline silicon layer is greater than the thickness of the first doped polycrystalline silicon layer to enhance the passivation and isolation effects.

Benefits of technology

This improves the passivation effect on the back side of the back contact solar cell, reduces the risk of short circuit, and enhances the reliability and efficiency of the cell.

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Abstract

The present disclosure is applicable to the technical field of solar cells, and provides a back-contact solar cell, a battery assembly, and a photovoltaic system. The back-contact solar cell comprises: a silicon substrate; a first doped polysilicon layer located in a first region on the back surface of the silicon substrate; a second doped polysilicon layer located in a second region on the back surface of the silicon substrate; a dielectric layer located on the side of the first doped polysilicon layer facing away from the silicon substrate; a third doped polysilicon layer located on the side of the dielectric layer facing away from the silicon substrate; a first metal electrode, the first metal electrode being in contact with the first doped polysilicon layer; and a second metal electrode, the second metal electrode being in contact with the second doped polysilicon layer, wherein the thickness of the third doped polysilicon layer is greater than the thickness of the first doped polysilicon layer. In the back-contact solar cell provided by the present disclosure, the passivation effect of the back surface of the cell can be enhanced, the isolation effect of the third doped polysilicon layer on the first metal electrode and the second metal electrode can be enhanced, thereby reducing the risk of short circuit of the cell, and improving the working reliability of the cell.
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Citation Information

Patent Citations

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  • Back contact solar cell, cell module and photovoltaic system

    CN222827606U

  • Solar cells having differentiated p-type and n-type architectures fabricated using an etch paste

    US20190207041A1