Light detection sensor, light detection device, and electronic apparatus

Abstract

Provided is a light detection sensor capable of performing more appropriate light detection by each of a first sensor and a second sensor. Specifically, this light detection sensor is configured to comprise: a first sensor that detects light in a first wavelength range; and a plurality of second sensors that detect light in a second wavelength range different from the first wavelength range. Light receiving parts of the plurality of second sensors are configured to be two-dimensionally arranged in a matrix at positions overlapping a light receiving part of the first sensor when viewed from the direction of the normal to a light incidence surface of the light receiving part of the first sensor. In other words, the first sensor and the second sensors are configured to be laminated on each other. Therefore, positional deviation between an imaging range by the first sensor and an imaging range by the second sensor can be suppressed, positional deviation between an image obtained by the first sensor and an image obtained by the second sensor can be suppressed, and these two images can be acquired coaxially.

Description

Light detection sensor, light detection device and electronic device

[0001] The present technology (technology according to the present disclosure) relates to a light detection sensor, a light detection device, and an electronic device.

[0002] In recent years, there has been growing interest in the use of terahertz (THz) waves for sensing applications. THz waves are electromagnetic waves in the frequency range of approximately 0.1 THz to 10 THz. THz waves are permeable to materials, and when irradiated onto a material, they exhibit a spectroscopic spectrum unique to that material, known as a fingerprint spectrum. As a sensor utilizing THz waves, for example, a thermal, uncooled terahertz sensor with a diaphragm structure that functions as an image sensor sensitive to THz waves has been proposed (see, for example, Patent Documents 1 and 2).

[0003] JP 2012-2603 A International Publication No. 2023 / 105577

[0004] However, image sensors sensitive to THz waves (THz sensors) have been difficult to use for object recognition because the maximum resolution of the images (THz wave images) obtained by the THz sensors is low due to the long wavelength of THz waves. Therefore, for example, when performing object recognition on an object imaged by a THz sensor, a two-lens configuration including an image sensor (RGB sensor) sensitive to short wavelengths such as RGB can be considered, thereby acquiring high-resolution images in addition to the THz wave images. However, with a two-lens configuration, there is a possibility of a misalignment between the imaging range of the THz sensor and the imaging range of the RGB sensor, resulting in a misalignment between the images obtained by the THz sensor and the images obtained by the RGB sensor. In other words, it has been difficult to obtain appropriate detection results from both the THz sensor and the RGB sensor.

[0005] An object of the present disclosure is to provide a light detection sensor, a light detection device, and an electronic device that are capable of performing more appropriate light detection with each of a first sensor and a second sensor.

[0006] The optical detection sensor disclosed herein comprises (a) a first sensor that detects light in a first wavelength band, and (b) a plurality of second sensors that detect light in a second wavelength band different from the first wavelength band, and (c) the light receiving sections of the plurality of second sensors are two-dimensionally arranged in a matrix at positions that overlap with the light receiving sections of the first sensor when viewed from the normal direction of the light incident surface of the light receiving sections of the first sensor.

[0007] The optical detection device disclosed herein comprises (a) a first sensor that detects light in a first wavelength band, (b) and a plurality of second sensors that detect light in a second wavelength band different from the first wavelength band, (c) the light receiving units of the plurality of second sensors comprise optical detection sensors that are arranged two-dimensionally in a matrix at positions that overlap the light receiving units of the first sensors when viewed from the normal direction of the light incident surface of the light receiving units of the first sensors, and (d) the optical detection sensors form a sensor array that is arranged two-dimensionally in a matrix.

[0008] The electronic device of the present disclosure comprises (a) a first sensor that detects light in a first wavelength band, (b) and a plurality of second sensors that detect light in a second wavelength band different from the first wavelength band, (c) the light receiving units of the plurality of second sensors have light detection sensors that are arranged two-dimensionally in a matrix at positions that overlap with the light receiving units of the first sensors when viewed from the normal direction of the light incident surface of the light receiving units of the first sensors, and (d) the light detection sensors form a sensor array that is arranged two-dimensionally in a matrix.

[0009] 13 is a diagram showing the overall configuration of a photodetector according to a first embodiment. FIG. 14 is a diagram showing the planar configuration of a pixel array section of a THz pixel. FIG. 15 is a diagram showing the circuit configuration of a readout circuit of a THz pixel. FIG. 16 is a diagram showing the planar configuration of a pixel array section of a visible light pixel. FIG. 17 is a diagram showing the circuit configuration of a readout circuit of a visible light pixel. FIG. 18 is a diagram showing a cross-sectional configuration of a photodetector when cut along line A-A in FIG. 2. FIG. 19 is a diagram showing the wiring layout of an Nth wiring layer. FIG. 20 is a diagram showing the wiring layout of an Mth wiring layer. FIG. 21 is a diagram showing the planar configuration of a pixel array section of a visible light pixel of a modified example. FIG. 19 is a diagram showing the cross-sectional configuration of a photodetector according to a second embodiment. FIG. 21 is a diagram showing the cross-sectional configuration of a photodetector according to a third embodiment. FIG. 22 is a diagram showing the cross-sectional configuration of a photodetector according to a fourth embodiment. FIG. 23 is a diagram showing the planar configuration of the photodetector shown in FIG. 12. FIG. 24 is a diagram showing the planar configuration of a bonding interface between a first substrate and a third substrate. FIG. 25 is a diagram showing the cross-sectional configuration of a photodetector according to a fifth embodiment. FIG. 26 is a diagram showing the cross-sectional configuration of a photodetector according to a sixth embodiment. FIG. 27 is a diagram showing the cross-sectional configuration of a photodetector according to a seventh embodiment. FIG. 28 is a diagram showing the cross-sectional configuration of a photodetector according to an eighth embodiment. FIG. 10 is a block diagram of the operation of the photodetector of the sixth embodiment. FIG. 11 is a flowchart of the operation of the photodetector of the sixth embodiment. FIG. 12 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment. FIG. 13 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment. FIG. 14 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment. FIG. 15 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment. FIG. 16 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment. FIG. 17 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment. FIG. 18 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment. FIG. 19 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment. FIG. 19 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment. FIG. 19 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment. FIG. 19 is a diagram showing a manufacturing process of the photodetector of the sixth embodiment.40A and 40B are diagrams illustrating a manufacturing process of a photodetector according to a sixth embodiment; a diagram illustrating a manufacturing process of a photodetector according to the sixth embodiment; a diagram illustrating a cross-sectional configuration of a photodetector according to a ninth embodiment; a diagram illustrating a planar configuration of a THz pixel; a diagram illustrating a cross-sectional configuration of an optical element when cut along line D-D in FIG. 40; a diagram illustrating a process of forming an opening according to the ninth embodiment; a diagram illustrating a process of forming a cavity according to the ninth embodiment; a diagram illustrating a planar configuration of the outer shape of an optical element according to a modified example; a diagram illustrating a planar configuration of the outer shape of an optical element according to a modified example; a diagram illustrating a planar configuration of the outer shape of an optical element according to a modified example; a diagram illustrating a cross-sectional configuration of an optical element according to a tenth embodiment; a diagram illustrating a planar configuration of the outer shape of an optical element according to a modified example; a diagram illustrating a planar configuration of the outer shape of an optical element according to a modified example; a diagram illustrating a cross-sectional configuration of an optical element according to an eleventh embodiment; a diagram illustrating a planar configuration of the outer shape of an optical element according to a modified example; a diagram illustrating a planar configuration of the outer shape of an optical element according to a modified example; a diagram illustrating a planar configuration of the outer shape of an optical element according to a modified example; a diagram illustrating a planar configuration of the outer shape of an optical element according to a modified example; a diagram illustrating a cross-sectional configuration of a photodetector according to a twelfth embodiment. Fig. 19 is an enlarged view showing the cross-sectional configuration of a step portion. Fig. 20 is a view showing the cross-sectional configuration of a photodetector 1 according to a thirteenth embodiment. Fig. 21 is a view showing the cross-sectional configuration of a photodetector 1 according to a fourteenth embodiment. Fig. 22 is a view showing the cross-sectional configuration of a photodetector according to a fifteenth embodiment. Fig. 23 is a view showing the functional configuration of an electronic device according to a sixteenth embodiment.

[0010] Examples of a light detection sensor, a light detection device, and an electronic device according to embodiments of the present disclosure will be described below with reference to FIGS. 1 to 62. The embodiments of the present disclosure will be described in the following order. Note that the present disclosure is not limited to the following examples. Furthermore, the effects described in this specification are examples and are not limiting, and other effects may also be present.

[0011] 1. First Embodiment 1-1 Overall Configuration of Photodetector 1-2 Configuration of Main Parts 2. Second Embodiment 3. Third Embodiment 4. Fourth Embodiment 5. Fifth Embodiment 6. Sixth Embodiment 7. Seventh Embodiment 8. Eighth Embodiment 9. Operation of Photodetector 10. Method of Manufacturing Photodetector 11. Ninth Embodiment 12. Tenth Embodiment 13. Eleventh Embodiment 14. Twelfth Embodiment 15. Thirteenth Embodiment 16. Fourteenth Embodiment 17. Fifteenth Embodiment 18. Sixteenth Embodiment

[0012] 1. First Embodiment [1-1 Overall Configuration of Photodetector] A photodetector 1 according to a first embodiment of the present disclosure will be described. Fig. 1 is a diagram showing the overall configuration of the photodetector 1 according to the first embodiment. The photodetector 1 in Fig. 1 has a plurality of photodetection sensors configured by stacking one pixel (hereinafter also referred to as a "THz pixel 2") that is sensitive to terahertz waves (THz waves) or infrared rays, and a plurality of pixels (hereinafter also referred to as "visible light pixels 3") that are sensitive to rays other than THz waves and infrared rays and are arranged two-dimensionally, and the plurality of photodetection sensors are arranged two-dimensionally.

[0013] The photodetector 1 includes a pixel array unit 4, a vertical driver 5, an ADC 6, a horizontal driver 7, a signal processing circuit 8, and a controller 9 as components for the THz pixels 2. As shown in FIG. 2, the pixel array unit 4 includes a plurality of THz pixels 2 arranged two-dimensionally in a matrix. FIG. 2 illustrates the planar configuration of the pixel array unit 4. Each THz pixel 2 includes a sensor 10 and a readout circuit 11 (see FIG. 3). That is, the sensors 10 (broadly referred to as "first sensors") form a first sensor array arranged two-dimensionally in a matrix. The vertical driver 5 is connected to reset lines and row selection lines (not shown) of the pixel array unit 4. The vertical driver 5 is composed of a shift register, an address decoder, etc., and controls scanning of pixel rows and addressing of pixel rows when selecting THz pixels 2 in the pixel array unit 4. The ADC 6 is arranged corresponding to each pixel column in the pixel array unit 4. The ADC 6 converts into a digital pixel signal (AD conversion) the analog pixel signal output from the THz pixel 2. As the ADC 6, for example, a single-slope ADC can be adopted.

[0014] The horizontal driver 7 is composed of a shift register, an address decoder, etc., and controls the scanning of pixel columns and the addresses of pixel columns when reading out pixel signals from the pixel array unit 4. As a result, the pixel signals AD converted by the ADC 6 are read out to the signal processing circuit 8. The signal processing circuit 8 performs predetermined signal processing on the pixel signals read out from the ADC 6 to generate two-dimensional image data. For example, the signal processing circuit 8 performs digital signal processing such as correction of vertical line defects and point defects, parallel-serial conversion, compression, encoding, addition, averaging, and intermittent operation. The control unit 9 controls the vertical driver 5 and the horizontal driver 7, respectively.

[0015] 3 is a diagram showing the circuit configuration of the readout circuit 11. As shown in FIG. 3, in the readout circuit 11, the detection voltage of the temperature detection element 26 is input to the non-inverting input terminal (+) of the differential amplifier AMP via the first selector switch REFSEL or the second selector switch SIGSEL. Here, the potential of the first selector switch REFSEL is set to a reference voltage Vref. In addition, a band-limiting capacitor RBWEN for limiting the signal band is connected to the transmission path from the sensor 10 to the second selector switch SIGSEL.

[0016] The inverting input terminal (-) of the differential amplifier AMP is connected to a sample-and-hold capacitor C ＳＨ Between the inverting input terminal (-) and the output terminal of the differential amplifier AMP, there is connected an auto-zero switch AZ for resetting the potential of the inverting input terminal (-) and a feedback capacitor C ｆｂ are connected in parallel. The auto-zero switch AZ is turned on and off under the control of the vertical drive unit 5. The output terminal of the differential amplifier AMP is connected to the gate of the amplifying transistor Q1. The drain of the amplifying transistor Q1 is connected to the power supply line VDD. The source of the amplifying transistor Q1 is connected to the drain of the selection transistor Q2. The source of the selection transistor Q2 is connected to the ADC 6. The selection transistor Q2 is turned on and off based on a control signal input to its gate from the vertical drive unit 5. With the above configuration, when the selection transistor Q2 is turned on, the output signal of the differential amplifier AMP is amplified by the amplifying transistor Q1 and read out to the ADC 6 as a pixel signal.

[0017] Similarly, the photodetector 1 includes a pixel array section 12, a vertical driver 13, an ADC 14, a horizontal driver 15, a signal processing circuit 16, and a controller 17 as components for the visible light pixels 3. The pixel array section 12 is located below the pixel array section 4. As shown in FIG. 4 , the pixel array section 12 includes a plurality of visible light pixels 3 arranged two-dimensionally in a matrix at positions overlapping the light absorption film 28 (see FIG. 6 ) of the THz pixel 2 when viewed from the normal direction of the light incidence surface (top surface S1 in FIG. 6 ) of the light absorption film 28. FIG. 4 is a diagram showing the planar configuration of the pixel array section 12 for the visible light pixels 3. Each visible light pixel 3 includes a photoelectric conversion section 18 (broadly speaking, a “second sensor” or “light receiving section of the second sensor”) and a readout circuit 19 (see FIG. 5 ). That is, the photoelectric conversion units 18 (second sensors) are two-dimensionally arranged in a matrix at positions overlapping the light absorbing films 28 (light receiving units of the first sensors), thereby forming a second sensor array. As a result, the light detection device 1 has a plurality of stacked structures (hereinafter also referred to as "light detection sensors 500") in which one sensor 10 (first sensor) and a plurality of photoelectric conversion units 18 (second sensor arrays) are stacked, and the plurality of light detection sensors 500 are two-dimensionally arranged in a matrix.

[0018] Although the first embodiment illustrates an example in which the photoelectric conversion units 18 (second sensor array) are disposed only at positions overlapping the light-absorbing film 28, other configurations may also be employed. For example, it is sufficient that at least some of the photoelectric conversion units 18 of the second sensor array are positioned so as to overlap the light-absorbing film 28, and the photoelectric conversion units 18 on the outer edge of the second sensor array may be positioned so as not to overlap the light-absorbing film 28. However, the photoelectric conversion units 18 positioned so as not to overlap the light-absorbing film 28 may have lower sensitivity than the photoelectric conversion units 18 positioned so as to overlap the light-absorbing film 28, due to light being blocked by the temperature detection element 26, THz sensor wiring, readout circuit, etc. Furthermore, the vertical drive unit 13 to the control unit 17 for the visible light pixel 3 are configured to perform the same processing as the vertical drive unit 5 to the control unit 9 for the THz pixel 2 described above.

[0019] FIG. 5 is a diagram showing the circuit configuration of the readout circuit 19. As shown in FIG. 5, in the readout circuit 19, the anode electrode of the photoelectric conversion unit 18 is electrically connected to a predetermined potential supply source (GND), and the cathode electrode is connected to the gate electrode of the amplification transistor 22 via the transfer transistor 20. The photoelectric conversion unit 18 generates charges according to the amount of light received. As shown in FIG. 5, the readout circuit 19 also includes four pixel transistors (transfer transistor 20, reset transistor 21, amplification transistor 22, and selection transistor 23) and a floating diffusion (hereinafter also referred to as "FD 24"). The transfer transistor 20 is connected between the cathode electrode of the photoelectric conversion unit 18 and the FD 24. A transfer pulse φTRF, which is active at a high level (e.g., VDD) (hereinafter also referred to as "high active"), is applied to the gate electrode of the transfer transistor 20 via a transfer line TG. When a transfer pulse φTRF is applied to the gate electrode, the transfer transistor 20 is turned on and transfers the charge accumulated in the photoelectric conversion unit 18 to the FD 24. The reset transistor 21 has a drain electrode connected to the power supply line VDD and a source electrode connected to the FD 24. A high active reset pulse φRST is applied to the gate electrode of the reset transistor 21 via the reset line RST before the transfer transistor 20 transfers the charge from the photoelectric conversion unit 18 to the FD 24. When the reset pulse φRST is applied to the gate electrode, the reset transistor 21 is turned on and discards the charge accumulated in the FD 24 to the power supply line VDD, resetting the FD 24.

[0020] The amplifier transistor 22 has a gate electrode connected to the FD 24 and a drain electrode connected to a power supply line VDD. After reset, the amplifier transistor 22 outputs a pixel signal corresponding to the potential of the FD 24 after the transfer transistor 20 transfers the charge. The selection transistor 23 has a drain electrode connected to the source electrode of the amplifier transistor 22 and a source electrode connected to a vertical signal line VSL. A high active selection pulse φSEL is applied to the gate electrode of the selection transistor 23 via the selection line SEL. When the selection pulse φSEL is applied to the gate electrode, the selection transistor 23 is turned on and outputs the pixel signal output by the amplifier transistor 22 to the vertical signal line VSL. The power supply line VDD and the vertical signal line VSL are wirings extending in the row direction of the pixel array section 12. Each of the power supply line VDD and the vertical signal line VSL is formed for each row and shared by the visible light pixels 3 in the same row. The transfer line TG, the reset line RST, and the selection line SEL are wirings that extend in the column direction of the pixel array section 12. Each of the transfer line TG, the reset line RST, and the selection line SEL is formed for each column and is shared by the visible light pixels 3 in the same column.

[0021] [1-2 Configuration of Main Components] Next, the detailed structure of the photodetector 1 will be described. FIG. 6 is a diagram showing the cross-sectional configuration of the photodetector 1 when cut along line A-A in FIG. 2. As shown in FIG. 6, the photodetector 1 is configured by stacking, in this order from the light incident surface side (the top surface side in FIG. 6), a first substrate 100 having the sensor 10 (first sensor) of the THz pixel 2 and a second substrate 200 having the photoelectric conversion unit 18 (second sensor) of the visible light pixel 3. That is, the sensor 10 and the photoelectric conversion unit 18 are formed on different substrates, and the sensor 10 (diaphragm 25) is located on the light incident surface side of the photoelectric conversion unit 18 (base substrate 35).

[0022] As shown in FIG. 6 , the first substrate 100 includes a diaphragm 25, a temperature detection element 26, and an insulating film 27 (specifically, an upper insulating film upper portion 27a, which is the upper portion). FIG. 6 illustrates the configuration of the first substrate 100 when the sensor 10 is a thermopile sensor. The diaphragm 25 functions as a light receiving unit that detects light in a first wavelength band and includes, for example, a light absorbing film 28 and an insulating film 29. Examples of light in the first wavelength band include terahertz waves or infrared rays (typically having a wavelength of several μm or more). The light absorbing film 28 is formed in a flat plate shape parallel to the upper surface S2 of the second substrate 200 (base substrate 35) and is disposed above the upper surface S2 of the second substrate 200 across the cavity 30. The light absorbing film 28 absorbs light in the first wavelength band and generates heat. Examples of materials for the light absorbing film 28 include carbon materials such as graphite, graphene, and carbon nanotubes (CNTs), and a two-dimensional carbonitride (or a two-dimensional layered compound) called MXene. When viewed from the normal direction of the upper surface S1 of the sensor 10, the cavity 30 is formed at a position overlapping with the light absorbing film 28 so as to enclose the light absorbing film 28.

[0023] As shown in FIGS. 2 and 6 , the light-absorbing film 28 has a two-dimensional array of openings 31 that penetrate the light-absorbing film 28 in the thickness direction. That is, the diaphragm 25 has a plurality of openings 31 that penetrate the diaphragm 25 in the thickness direction. The light-absorbing film 28 is also formed in a lattice pattern surrounding each opening 31. FIG. 2 illustrates an example in which the openings 31 have a square shape. The openings 31 function as light passages that transmit light to be incident on and received by the photoelectric conversion unit 18. The openings 31 also reduce the heat capacity of the diaphragm 25 by the amount of the openings 31, thereby improving the response speed. They also function as release holes for forming cavities 30 during the manufacture of the photodetector 1. The pitch p1 of the openings 31 in the light-absorbing film 28 is n times (n is an integer greater than or equal to 1) the pitch p2 of the photoelectric conversion units 18 on the base substrate 35. FIG. 4 illustrates an example in which the pitches p1 and p2 are the same and an opening 31 is formed on the path of light incident on the photoelectric conversion unit 18. This prevents the light incident on the photoelectric conversion unit 18 from being blocked by the light absorbing film 28, thereby improving the sensitivity of the photoelectric conversion unit 18 (visible light pixel 3). The diameter of the opening 31 is also sufficiently smaller than the target wavelength (wavelength of the first wavelength band) detected by the sensor 10. For example, it is set to ½ or less of the target wavelength. This prevents a decrease in the absorption rate of light in the first wavelength band due to the opening 31, thereby preventing a decrease in the sensitivity of the sensor 10. As shown in FIG. 6 , an insulating film 29 is disposed between the light absorbing film 28 and the temperature detection element 26, electrically insulating the light absorbing film 28 from the temperature detection element 26. FIG. 6 illustrates an example in which the insulating film 29 is formed below the outer edge of the light absorbing film 28, forming a stepped outer edge of the light absorbing film 28 with the insulating film 29. The insulating film 29 may be made of an insulating material such as silicon nitride (Si3N4) or silicon oxide (SiO2) that is commonly used in semiconductor processes.

[0024] The insulating film 27 functions as a sacrificial layer for forming a cavity 30 between the upper surface S2 of the second substrate 200 (base substrate 35) and the diaphragm 25 (light absorbing film 28). The insulating film 27 is formed in a lattice pattern to surround the cavity 30. The insulating film 27 may be made of an insulating material commonly used in semiconductor processes, such as silicon nitride (Si3N4) or silicon oxide (SiO2). A plurality of vias 32 and wiring 33 are formed within the insulating film 27. The vias 32 and wiring 33 electrically connect the temperature detection element 26 to the readout circuit 11 (see FIG. 3; not shown in FIG. 6) formed on the second substrate 200 (base substrate 35). The vias 32 and wiring 33 may be made of a metal material, such as copper (Cu). 6 illustrates an example in which the wiring 33 formed on the underside of the insulating film upper portion 27a and the wiring 33 formed on the upper surface of the insulating film lower portion 27b of the insulating film 27 (insulating film upper portion 27a, insulating film lower portion 27b) function as a bonding portion, and the first substrate 100 and the second substrate 200 are bonded to each other by bump bonding or metal bonding such as Cu-Cu bonding. That is, at least a portion of the bonding interface between the substrate on which the sensor 10 (first sensor) is formed and the substrate on which the photoelectric conversion unit 18 (second sensor) is formed is bonded by metal bonding. Furthermore, an insulating film 34 is disposed on the upper surface S3 of the insulating film 27 so as to cover the upper surface S3.

[0025] As shown in FIGS. 2 and 6 , one end of the temperature detection element 26 is embedded in the insulating film 27, and the other end protrudes toward the diaphragm 25, functioning as a support beam supporting the diaphragm 25. FIGS. 2 and 6 illustrate a case in which two temperature detection elements 26 support the lower portions of both ends of the diaphragm 25 so that the diaphragm 25 is floating relative to the second substrate 200. When viewed from the normal direction of the upper surface S1 of the light absorbing film 28, each of the two temperature detection elements 26 is located between the inner wall surface of the insulating film 27 and the outer edge of the light absorbing film 28, and is formed in an L-shape along the corner of the light absorbing film 28. One end of the L-shape is embedded in the insulating film 27, and the other end is connected to the light absorbing film 28. The temperature detection element 26 detects the temperature difference between the light absorbing film 28 and the surrounding area of ​​the light absorbing film 28. The detection result is converted into a voltage and output to the readout circuit 11 (see FIG. 3 , not shown in FIG. 6 ). The temperature detection element 26 may be made of a thermoelectric material such as polysilicon (Poly-Si), silicon germanium (SiGe), or bismuth telluride (Bi2Te3), a bolometer material such as amorphous silicon (αSi) or vanadium oxide (VOx), or a pyroelectric material. In the first substrate 100 (THz pixel 2) configured as described above, the light absorbing film 28 generates heat when it absorbs light in the first wavelength band. This causes the temperature of the light absorbing film 28 to rise. The temperature detection element 26 converts the temperature difference between the light absorbing film 28 and the surrounding area of ​​the light absorbing film 28 into a voltage and outputs it. At this time, the temperature detection element 26 outputs a voltage corresponding to the amount of temperature rise of the light absorbing film 28. Through this process, the THz pixel 2 detects light in the first wavelength band.

[0026] The second substrate 200 includes a base substrate 35, a wiring layer 36, an etching stop film 37, and a lower portion of the insulating film 27 (hereinafter also referred to as the "insulating film lower portion 27b"). FIG. 6 illustrates an example of the configuration of the second substrate 200 when the photoelectric conversion unit 18 is a surface-type CIS. The base substrate 35 may be, for example, a silicon (Si) substrate. In a region of the base substrate 35 located below the light absorbing film 28 (hereinafter also referred to as the "photoelectric conversion unit region 38"), the photoelectric conversion units 18 are formed at the positions of the visible light pixels 3. That is, the photoelectric conversion units 18 (second sensors) are located on the lower surface S4 side of the light absorbing film 28, and the photoelectric conversion units 18 (second sensor light receiving units) are two-dimensionally arranged in a matrix at positions overlapping the light absorbing film 28 when viewed from the normal direction of the upper surface S1 of the light absorbing film 28 (first sensor light receiving unit). As described above, the pitch p2 of the photoelectric conversion portions 18 is the same as the pitch p1 of the openings 31 of the light absorption film 28. For example, the pitch p2 is set to ¼ or less of the target wavelength detected by the sensor 10.

[0027] The photoelectric conversion unit 18 functions as a light receiving unit that detects light in a second wavelength band different from the first wavelength band. For example, the wavelength of the second wavelength band is shorter than that of the first wavelength band. Examples of light in the second wavelength band include visible light and near-infrared light (typically having a wavelength of approximately several hundred nanometers to 2 μm). The photoelectric conversion unit 18 has a well region 18a of a first conductivity type (e.g., p-type) and a second conductivity type region 18b of a second conductivity type (opposite conductivity type to the first conductivity type, e.g., n-type) that forms a p-n junction with the well region 18a. The photoelectric conversion unit 18 forms a photodiode with the p-n junction between the well region 18a and the second conductivity type region 18b, and generates charges (e.g., electrons) according to the amount of light received. The photoelectric conversion unit 18 also accumulates the charges generated by photoelectric conversion. Furthermore, in the region of the base substrate 35 below the insulating film 27 (hereinafter also referred to as the "THz circuit region 39"), the readout circuit 11 (see FIG. 3) of the THz pixel 2 is formed.

[0028] Furthermore, in a region of the wiring layer 36 located below the light absorbing film 28 (hereinafter also referred to as the "second wiring region 40"), an interlayer insulating film 41 and a plurality of stacked wirings 42 are arranged via the interlayer insulating film 41. That is, the wirings 42 are arranged on the lower surface S4 of the light absorbing film 28 (broadly speaking, "the surface opposite to the light incident surface of the light receiving unit of the first sensor"). Furthermore, at least a portion of the wirings 42 (hereinafter also referred to as "specific wirings") is arranged in a position overlapping with the light absorbing film 28 when viewed from the normal direction of the upper surface S1 of the light absorbing film 28. FIG. 6 illustrates an example in which the entire wirings 42 are arranged in a position overlapping with the light absorbing film 28. As the wirings 42, for example, wirings connected to pixel transistors (transfer transistor 20, reset transistor 21, amplifier transistor 22, and selection transistor 23) that output pixel signals based on the output of the photoelectric conversion unit 18 can be used. For example, the transfer line TG, the reset line RST, the selection line SEL, the power supply line VDD, and the vertical signal line VSL shown in FIG. 5 are included.

[0029] Here, as shown in FIG. 7 , the transfer line TG, reset line RST, and selection line SEL are wirings (broadly, “plurality of first wirings”) extending in the row direction of the plurality of visible light pixels 3 (second sensor array) arranged two-dimensionally in a matrix. Also, as shown in FIG. 8 , the power supply line VDD and vertical signal line VSL are wirings (broadly, “plurality of second wirings”) extending in the column direction of the plurality of visible light pixels 3. Therefore, at least some of the power supply lines VDD, etc. (first wirings) and transfer lines TG, etc. (second wirings) are arranged so as to form a grid when viewed from the normal direction of the upper surface S1 of the light absorption film 28. As a result, the wirings 42 form a narrow-pitch metal mesh (grid). The pitch and diameter of the metal mesh are set to a size that allows the metal mesh to function as a filter that transmits light in the second wavelength band (short wavelength light) and reflects light in the first wavelength band (long wavelength light). For example, the pitch and diameter are set to ¼ or less of the target wavelength detected by the THz pixel 2. The lower limit is, for example, equal to or greater than half of the target wavelength detected by the photoelectric conversion unit 18. This allows the metal mesh to function as a reflector, reflecting light in the first wavelength band that has passed through the light absorbing film 28 back to the light absorbing film 28, thereby improving the sensitivity of the THz pixel 2 (sensor 10). Furthermore, light in the second wavelength band can pass through the gaps in the wiring 42 (openings in the metal mesh), allowing light of the second wavelength to enter and be received by the photoelectric conversion unit 18. FIG. 7 is a diagram showing the wiring layout of the Nth layer of the wiring layer 36. Also, FIG. 8 is a diagram showing the wiring layout of the Mth layer (M≠N) of the wiring layer 36.

[0030] 7 and 8, the wiring 42 is disposed in a position overlapping with the region between the photoelectric conversion units 18 when viewed from the normal direction of the light absorption film 28. FIGS. 7 and 8 illustrate an example in which the wiring 42 is disposed on the outer edge of the photoelectric conversion units 18. This ensures the aperture ratio of the photoelectric conversion units 18, prevents light passing through the openings 31 and heading toward the photoelectric conversion units 18 from being blocked by the wiring 42, and improves the sensitivity of the photoelectric conversion units 18 (visible light pixels 3). Examples of materials that can be used for the wiring 42 include copper (Cu), aluminum (Al), and tungsten (W). In FIG. 6, some of the wiring 42 are located on the etching stop film 37.

[0031] Furthermore, a plurality of vias 44 and wirings 45 are arranged in a region of the wiring layer 36 located below the insulating film 27 (hereinafter also referred to as the "first wiring region 43"). The vias 44 and wirings 45 electrically connect the wirings 33 in the insulating film 27 to the readout circuit 11 (see FIG. 3 , not shown in FIG. 6 ) formed on the base substrate 35 (THz circuit region 39). The vias 44 and wirings 45 may be made of a metal material such as copper (Cu). The etching stop film 37 is used when forming the cavity 30 and covers the upper surface S5 of the wiring layer 36. The etching stop film 37 may be made of a material having a higher etching selectivity than the insulating film 27. For example, silicon carbonitride (SiCN) may be used.

[0032] In the light detection device 1 having the above configuration, the sensor 10 (first sensor) detects terahertz waves or infrared rays (light in a first wavelength band). The photoelectric conversion unit 18 (second sensor) detects visible light (light in a second wavelength band). The detection result of the sensor 10 is used, for example, to measure the material-specific spectrum of the image capture target. The detection result of the photoelectric conversion unit 18 is used, for example, to generate a visible light image and to recognize the object captured by the sensor 10. As a comparative example, consider a case where the light detection device 1 has a twin-lens configuration, including a THz sensor having THz pixels 2 and a visible light sensor having visible light pixels 3. With a twin-lens configuration, a misalignment may occur between the imaging range of the THz sensor and the imaging range of the RGB sensor, resulting in a misalignment between the image obtained by the THz sensor and the image obtained by the visible light sensor (visible light image). For example, if a configuration is adopted in which a process to correct the misalignment of the images is performed, the recognition accuracy of the object recognition may be limited. Furthermore, for example, if the light detection device 1 is configured as a single lens device equipped with an optical system such as a prism to prevent misalignment of the image, the system cost may become high.

[0033] In contrast, the photodetector 1 according to the first embodiment includes a sensor 10 (first sensor) that detects light in a first wavelength band and multiple photoelectric conversion units 18 (second sensors) that detect light in a second wavelength band different from the first wavelength band. The multiple photoelectric conversion units 18 are two-dimensionally arranged in a matrix at positions that overlap the photoabsorbing film 28 when viewed from the normal direction of the upper surface S1 of the photoabsorbing film 28 of the sensor 10. That is, the photoabsorbing film 28 and the photoelectric conversion units 18 are stacked on top of each other within a single chip. This reduces misalignment between the imaging range of the sensor 10 and the imaging range of the photoelectric conversion units 18. This allows the sensor 10 and the photoelectric conversion units 18 to perform more appropriate light detection. This reduces misalignment between the image obtained by the sensor 10 and the image obtained by the photoelectric conversion units 18, allowing these two images to be acquired coaxially. Furthermore, unlike a configuration that includes an optical system such as a prism, increases in system costs can be suppressed.

[0034] Furthermore, the photodetector 1 according to the first embodiment is configured to include a wiring 42 disposed on the lower surface S4 of the light-absorbing film 28 (the light-receiving unit of the first sensor) and connected to a pixel transistor that outputs a pixel signal based on the output of the photoelectric conversion unit 18 (the second sensor). Furthermore, at least a portion of the wiring 42 is disposed in a position overlapping the light-absorbing film 28 of the sensor 10 when viewed from the normal direction of the upper surface S1 of the light-absorbing film 28. That is, in a plan view, the wiring 42 of the photoelectric conversion unit 18 is disposed below the sensor 10 and overlapping the sensor 10. This allows the wiring 42 to function as a reflector, reflecting light in the first wavelength band that has passed through the light-absorbing film 28 back to the light-absorbing film 28, thereby improving the sensitivity of the THz pixel 2 (sensor 10). Therefore, the photodetector 1 according to the first embodiment can improve the sensitivity of the sensor 10 of the THz pixel 2 while maintaining the sensitivity of the photoelectric conversion unit 18 of the visible light pixel 3.

[0035] Furthermore, in the photodetector 1 according to the first embodiment, the sensor 10 (first sensor) is arranged at a position separated from the base substrate 35 across the cavity 30, and includes a diaphragm 25 including a light absorbing film 28 that absorbs light in the first wavelength band and generates heat, and a temperature detection element 26 that detects the temperature difference between the light absorbing film 28 and the periphery of the light absorbing film 28. That is, the light absorbing film 28 and the temperature detection element 26 are configured to have a thermal isolation structure (hollow structure) in which they are floating above the base substrate 35. This allows the sensitivity of the sensor 10 of the THz pixel 2 to be further improved.

[0036] Although the first embodiment illustrates an example in which a thermopile sensor is used as the sensor 10, other configurations may also be employed. For example, other types of sensors, such as a bolometer sensor, a pyroelectric sensor, or a diode sensor, may also be used. Furthermore, each component of the photodetector 1, such as the light-absorbing film 28, the insulating films 27 and 29, the temperature detection element 26, and the base substrate 35, may be made of a single material or may be made of a laminate or composite of multiple materials. Furthermore, in the first embodiment, as shown in FIG. 4 , the pitch p1 of the openings 31 in the light-absorbing film 28 is the same as the pitch p2 of the photoelectric conversion units 18 in the base substrate 35. However, other configurations may also be employed. For example, as shown in FIG. 9 , the pitch p1 may be m times the pitch p2 (m is an integer greater than or equal to 2). FIG. 9 illustrates an example in which the pitch p1 is twice the pitch p2 (p2 = 2 * p1). That is, four photoelectric conversion units 18 are arranged in a 2 × 2 array directly below each opening 31. In the first embodiment, the wirings 42 are arranged in a narrow-pitch grid pattern, but other examples are also possible. For example, the wirings 42 may be arranged in parallel.

[0037] 2. Second Embodiment Next, a photodetector 1 according to a second embodiment of the present disclosure will be described. The photodetector 1 according to the second embodiment is a modified example of the photodetector 1 according to the first embodiment. FIG. 10 corresponds to FIG. 6 of the first embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the second embodiment. In FIG. 10, parts corresponding to those in FIG. 6 are designated by the same reference numerals, and redundant description will be omitted. In the photodetector 1 according to the second embodiment, as illustrated in FIG. 10, at least a portion of the wiring 42 (specific wiring) is made of a material that transmits light in the second wavelength band and reflects light in the first wavelength band (hereinafter also referred to as a "transmissive material"). FIG. 10 illustrates an example in which the wiring 42 on the base substrate 35 side, as well as the via 44 and wiring 45 on the base substrate 35 side, are formed of a transmissive material. Examples of transmissive materials that can be used include indium tin oxide (ITO), indium zinc oxide (IZO), and zinc oxide (ZnO)-based materials. This improves the aperture ratio of the photoelectric conversion unit 18 (second sensor), increases the layout flexibility of pixel transistors, and improves sensitivity and noise characteristics. From the perspective of the sensitivity of the photoelectric conversion unit 18, it is preferable to construct all of the wiring 42, 45, and vias 44 in the wiring layer 36 from a transparent material. However, the wiring 42, 45, and vias 44 constructed from a transparent material have a higher wiring resistance than metal wiring, which may result in a deterioration in noise characteristics and operating speed. Therefore, from the perspective of noise characteristics and operating speed, it is preferable to construct only the local wiring, which requires a relatively low resistance, from a transparent material. Figure 10 illustrates an example in which the wiring 42, 45, and vias 44 between the base substrate 35 and the first-layer wiring 42 (the first layer counting from the base substrate 35 side) are constructed from a transparent material.

[0038] 3. Third Embodiment Next, a photodetector 1 according to a third embodiment of the present disclosure will be described. The photodetector 1 according to the third embodiment is a modified example of the photodetector 1 according to the second embodiment. FIG. 11 is a diagram corresponding to FIG. 10 of the second embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the third embodiment. In FIG. 11, parts corresponding to those in FIG. 10 are assigned the same reference numerals, and redundant description will be omitted. As illustrated in FIG. 11, the photodetector 1 according to the third embodiment further includes a color filter 46 and a planarization film 47 in addition to the configuration of the photodetector 1 according to the second embodiment illustrated in FIG. 10. The color filter 46 is formed on the etching stop film 37 for each photoelectric conversion unit 18. For example, a filter R that transmits red light, a filter G that transmits green light, a filter B that transmits blue light, and a filter NIR that transmits near-infrared light can be used as the color filter 46. This allows light of different wavelengths to be detected for each photoelectric conversion unit 18, and a color image can be acquired from pixel signals output from the photoelectric conversion units 18 (visible light pixels 3). The planarization film 47 is disposed on the color filter 46 so that the upper surface is flat. The planarization film 47 may also be configured to include light-collection improvement items used in general CMOS image sensors, such as an on-chip lens 48 or a waveguide 49. This can improve the light-collection efficiency of light in the second wavelength band, and further improve the sensitivity of the photoelectric conversion unit 18 (visible light pixel 3).

[0039] 4. Fourth Embodiment Next, a photodetector 1 according to a fourth embodiment of the present disclosure will be described. The photodetector 1 according to the fourth embodiment is a modified example of the photodetector 1 according to the first embodiment. FIG. 12 corresponds to FIG. 6 of the first embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the fourth embodiment. However, FIG. 12 illustrates a cross-sectional configuration taken along line B-B in FIG. 14. In FIG. 12, parts corresponding to those in FIG. 6 are designated by the same reference numerals, and redundant description will be omitted. In the photodetector 1 according to the fourth embodiment, as shown in FIG. 12, a third substrate 300 is disposed on a first substrate 100, and the third substrate 300 includes a base substrate 35 on which photoelectric conversion units 18 are formed. That is, the photoelectric conversion units 18 (second sensors) are located on the upper surface S1 side of the light absorbing film 28. Furthermore, as shown in FIG. 14, the pitch p2 of the photoelectric conversion units 18 is smaller than the pixel pitch p3 of the sensor 10 (p2<p3). This results in a configuration in which a large number of visible light pixels 3 (visible light pixels 3 arranged in a two-dimensional array) are arranged on one THz pixel 2. Furthermore, in the third substrate 300, an insulating layer 50 is arranged on the lower surface S6 of the base substrate 35, and an anti-reflection film 51 and an on-chip lens 52 (see FIG. 13) are laminated in this order on the upper surface S7 of the base substrate 35. A lower surface S8 of the insulating layer 50 is in contact with an upper surface S9 of the insulating film 34. FIG. 13 is a diagram showing the planar configuration of the photodetector 1 shown in FIG. 12.

[0040] A recess (hereinafter also referred to as a "cavity 53") is formed on the lower surface S8 of the insulating layer 50 for each diaphragm 25 to accommodate the diaphragm 25. That is, the cavity 53 is formed on the lower surface of the third substrate 300. The sidewalls of the cavities 53 are formed at the same position as the insulating film 27 when viewed from the normal direction of the light absorbing film 28. Therefore, the sidewalls of the cavities 53 are formed in a lattice pattern so as to surround the diaphragm 25. Furthermore, the lower surface S8 of the sidewalls of the cavities 53 is joined to the upper surface S9 of the insulating film 34. This hermetically seals the space accommodating the sensor 10 with the third substrate 300. This prevents heat from escaping from the space accommodating the sensor 10 to the outside, improving the accuracy of temperature difference detection by the temperature detection element 26. The space accommodating the sensor 10 (light absorbing film 28, temperature detection element 26) may be vacuum-sealed. For example, the vacuum sealing can be achieved at the wafer level by using the WoW (Wafer-on-Wafer) technology to bond wafers under vacuum, which can reduce the increase in manufacturing costs associated with vacuum sealing.

[0041] Furthermore, when vacuum bonding is performed, as shown in FIG. 14 , a ring-shaped region (hereinafter also referred to as the “metal bonding region 95”) of the bonding interface between the first substrate 100 and the third substrate 300 that surrounds the outer periphery of the pixel array section 4 of the THz pixel 2 when viewed from the normal direction of the upper surface S1 of the light absorption film 28 may be bonded by metal bonding. FIG. 14 is a diagram showing the planar configuration of the bonding interface between the first substrate 100 and the third substrate 300. For example, annular bonding portions made of a metal material are formed on the upper surface S9 of the first substrate 100 and the lower surface S8 of the third substrate 300, corresponding to the metal bonding region 95, and the formed bonding portions are bonded to each other by metal bonding such as bump bonding or Cu-Cu bonding. Generally, metal-to-metal bonding (metal bonding) reduces the number of tiny pinholes that occur at the bonding interface compared to bonding between insulating films, resulting in better sealing. Therefore, performing metal bonding so as to surround the outer periphery of the pixel array section 4 in a ring shape can improve the reliability of the vacuum seal. The metal bonding between the first substrate 100 and the third substrate 300 is performed, for example, simultaneously with the process of connecting the wiring of the first substrate 100 and the wiring of the third substrate 300. This eliminates the need for a special additional process and reduces the number of processes required for metal bonding. Furthermore, multiple vias 54 and wirings 55 are formed in the sidewalls of the cavity 53, the insulating film 34, the insulating film 27, the etching stop film 37, and the wiring layer 36. The vias 54 and wirings 55 electrically connect the photoelectric conversion unit 18 to the wirings 42 formed in the wiring layer 36 of the second substrate 200 and the readout circuit 19 (see FIG. 5 ) of the readout circuit board 59 (described below). The wirings 42 form a narrow-pitch metal mesh and function as a reflector that reflects light in the first wavelength band. This allows light in the first wavelength band that has passed through the light absorbing film 28 to be reflected back to the light absorbing film 28, thereby improving the sensitivity of the THz pixel 2 (sensor 10).

[0042] Furthermore, wiring 57 (broadly speaking, "predetermined wiring") is disposed in a region of the insulating layer 50 located above the light absorbing film 28 (hereinafter also referred to as the "upper region 56"). That is, the wiring 57 (predetermined wiring) is wiring disposed between the photoelectric conversion unit 18 (second sensor) and the light absorbing film 28. For example, the wiring 57 may be wiring that functions as local wiring among wirings connected to pixel transistors that output pixel signals based on the output of the photoelectric conversion unit 18. That is, among wirings connected to pixel transistors, the local wiring is disposed in the upper region 56, and the other wirings are disposed in the second wiring region 40. This reduces the amount of wiring 57 (metal wiring, etc.) disposed on the diaphragm 25, thereby suppressing a reduction in the amount of light in the first wavelength band that reaches the diaphragm 25 (light absorbing film 28) due to the wiring 57. Furthermore, this improves the degree of layout freedom for pixel transistors, etc., and further allows the wiring 42 of the wiring layer 36 to function as a reflector. Furthermore, at least a portion of the wiring 57 may be transparent wiring 57a and transparent vias 57b (broadly speaking, "wiring") made of a material that transmits light in the first wavelength band. This further reduces the reduction in sensitivity of the sensor 10 (first sensor). Examples of materials that can be used for the wiring 57 include ultrathin indium tin oxide (ITO), ultrathin zinc oxide (ZnO), amorphous indium oxide co-doped with traces of hydrogen (H) and cerium (Ce) (In2O3:Ce,H), and conductive polymer (PEDOT:PSS). When using conductive polymer (PEDOT:PSS), the thickness of the transparent wiring 57a can be increased to approximately 100 nm.

[0043] 12, an anti-reflection layer 58 is disposed on the bottom surface S10 of the cavity 53 (recess). The anti-reflection layer 58 is a layer that suppresses reflection of light in the first wavelength band at the interface between the anti-reflection layer 58 and air. For example, a dielectric multilayer film or a microfabricated structure such as a moth-eye structure can be used as the anti-reflection layer 58. Furthermore, a readout circuit board 59 on which the readout circuit 11 (see FIG. 3) and the readout circuit 19 (see FIG. 5) are formed is disposed on the lower surface S11 of the wiring layer 36. That is, the readout circuit board 59 is disposed on the lower surface S4 side of the light absorbing film 28. Furthermore, the first substrate 100 includes the diaphragm 25, the temperature detection element 26, the insulating film 27, the etching stop film 37, and the upper portion of the wiring layer 36 (hereinafter also referred to as the "upper wiring layer portion 36a"). The second substrate 200 also includes a readout circuit board 59 and a lower portion of the wiring layer 36 (hereinafter also referred to as "wiring layer lower portion 36b"). In the photodetector 1 according to the fourth embodiment, the wiring of the sensor 10 (i.e., the wiring that electrically connects the temperature detection element 26 and the readout circuit 11 (see FIG. 3)) has a configuration similar to that of the vias 32, 44 and the wiring 33, 45 (see FIG. 6) described in the first embodiment.

[0044] 5. Fifth Embodiment Next, a photodetector 1 according to a fifth embodiment of the present disclosure will be described. The photodetector 1 according to the fifth embodiment is a modified example of the photodetector 1 according to the fourth embodiment. FIG. 15 is a diagram corresponding to FIG. 12 of the fourth embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the fifth embodiment. In FIG. 15, parts corresponding to those in FIG. 12 are assigned the same reference numerals, and redundant description will be omitted. In the fifth embodiment, as illustrated in FIG. 15, a color filter 66 and a planarization film 67 are provided between the antireflection film 51 and the on-chip lens 52 of the photodetector 1 according to the fourth embodiment illustrated in FIG. 12. The color filter 66 is formed on the antireflection film 51 for each photoelectric conversion unit 18. For example, a filter R that transmits red light, a filter G that transmits green light, a filter B that transmits blue light, and a filter NIR that transmits near-infrared light can be used as the color filter 66. This allows light of different wavelengths to be detected for each photoelectric conversion unit 18, and a color image can be acquired from pixel signals output from the photoelectric conversion units 18 (visible light pixels 3). The planarizing film 67 is disposed on the color filter 46 so that the upper surface thereof is flat.

[0045] 6. Sixth Embodiment Next, a photodetector 1 according to a sixth embodiment of the present disclosure will be described. The photodetector 1 according to the sixth embodiment is a modified example of the photodetector 1 according to the fourth embodiment. FIG. 16 corresponds to FIG. 12 of the fourth embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the sixth embodiment. In FIG. 16, parts corresponding to those in FIG. 12 are designated by the same reference numerals, and redundant description will be omitted. As illustrated in FIG. 16, the photodetector 1 according to the sixth embodiment includes a sealing substrate 60 between the first substrate 100 and the insulating layer 50 of the photodetector 1 according to the fourth embodiment shown in FIG. 12, and a cavity 53 (recess) is formed on the lower surface S11 of the sealing substrate 60. For example, a glass substrate can be used as the sealing substrate 60. The lower surface S11 of the sidewall of the cavity 53 (the lower surface of the sealing substrate 60) is bonded to the upper surface S9 of the insulating film 34 via an insulating film 61.

[0046] Additionally, a lower electrode 62a, a photoelectric conversion layer 62b, and an upper electrode 62c are stacked in this order on the upper surface of the insulating layer 50. The lower electrode 62a is formed within the insulating layer 50 for each photoelectric conversion unit 18 (second sensor). The photoelectric conversion layer 62b is disposed on all the lower electrodes 62a, forming one common layer for all the photoelectric conversion units 18. Materials for the lower electrodes 62a and the upper electrodes 62c include, for example, indium tin oxide (ITO), zinc oxide (ZnO), indium oxide co-doped with trace amounts of hydrogen (H) and cerium (Ce) (In2O3:Ce,H), and conductive polymer (PEDOT:PSS). Materials for the photoelectric conversion layer 62b include, for example, an organic film or indium gallium arsenide (InGaAs). The upper electrode 62c is disposed on the photoelectric conversion layer 62b, forming one common layer for all the photoelectric conversion units 18. The lower electrode 62a, the photoelectric conversion layer 62b, and the upper electrode 62c each constitute a photoelectric conversion unit 18 (second sensor) that detects light in the second wavelength band. The photoelectric conversion units 18 are arranged two-dimensionally in a matrix. A sealing film 63 is disposed on the upper surface of the upper electrode 62c. Examples of materials that can be used for the sealing film 63 include aluminum oxide (Al2O3) and silicon nitride (Si3N4).

[0047] 16 and 17, a through electrode 65 is formed on the side wall of the cavity 53, penetrating from the upper surface of the sealing substrate 60 to the wiring 55 (junction) in the insulating film 61. The through electrode 65 electrically connects the photoelectric conversion unit 18 and the readout circuit 19 (see FIG. 5; not shown in FIG. 16). Note that the configuration for electrically connecting the photoelectric conversion unit 18 and the readout circuit 19 is not limited to the through electrode 65, and other structures may also be employed. FIG. 17 is a diagram showing the cross-sectional configuration of the photodetector 1 when cut along line CC in FIG. 16.

[0048] 7. Seventh Embodiment Next, a photodetector 1 according to a seventh embodiment of the present disclosure will be described. The photodetector 1 according to the seventh embodiment is a modified example of the photodetector 1 according to the sixth embodiment. FIG. 18 is a diagram corresponding to FIG. 16 of the sixth embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the seventh embodiment. In FIG. 18, parts corresponding to those in FIG. 16 are assigned the same reference numerals, and redundant description will be omitted. In the seventh embodiment, as illustrated in FIG. 18, a color filter 66 and a planarization film 67 are provided between the sealing film 63 and the on-chip lens 52 of the photodetector 1 according to the sixth embodiment illustrated in FIG. 16. The color filter 66 is formed on the sealing film 63 for each photoelectric conversion unit 18. For example, a filter R that transmits red light, a filter G that transmits green light, a filter B that transmits blue light, and a filter NIR that transmits near-infrared light can be used as the color filter 66. This allows light of different wavelengths to be detected for each photoelectric conversion unit 18, and a color image can be acquired from pixel signals output from the photoelectric conversion units 18 (visible light pixels 3). The planarizing film 67 is disposed on the color filter 46 so that the upper surface thereof is flat.

[0049] 8. Eighth Embodiment Next, a photodetector 1 according to an eighth embodiment of the present disclosure will be described. The photodetector 1 according to the eighth embodiment is a modified example of the photodetector 1 according to the sixth embodiment. FIG. 19 corresponds to FIG. 16 of the sixth embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the eighth embodiment. In FIG. 19, parts corresponding to those in FIG. 16 are assigned the same reference numerals, and redundant description will be omitted. In the eighth embodiment, as shown in FIG. 19, a logic circuit that processes data digitally converted by the readout circuit 19 (see FIG. 5) is formed on a substrate (hereinafter also referred to as a "logic circuit substrate 68") separate from the first substrate 100, the second substrate 200, and the third substrate 300. FIG. 19 illustrates a case where the logic circuit substrate 68 is disposed (stacked) below the second substrate 200.

[0050] 9. Operation of the Photodetector Next, an example of the operation of the photodetector 1 of the sixth embodiment shown in FIG. 16 will be described. FIG. 20 is a block diagram illustrating the operation of the photodetector 1 of the sixth embodiment. FIG. 21 is a flowchart illustrating the operation of the photodetector 1 of the sixth embodiment. First, as shown in FIG. 20, the photoelectric conversion unit 18 captures an image in accordance with instructions from the sensor control unit 69 and outputs image data (a first image in FIG. 21) (steps S101 to S104 in FIG. 21). The image data output by the photoelectric conversion unit 18 is input to an ISP (Image Signal Processor) 70. The ISP 70 analyzes the image represented by the input image data (step S105 in FIG. 21). The image is analyzed to determine whether subject 71, which is the image capture target of sensor 10, has entered the angle of view (image capture area) of photodetector 1. If it is determined that subject 71 has entered the angle of view of photodetector 1, sensor control unit 69 drives light source 72 of light in the first wavelength band and sensor 10, irradiates light in the first wavelength band on subject 71, captures an image of subject 71 with sensor 10, and outputs image data (second image in FIG. 21) (steps S106 to S108 in FIG. 21). By operating photodetector 1 in this manner, light source 72 and sensor 10 are driven only when necessary, thereby reducing power consumption of photodetector 1.

[0051] 10. Manufacturing Method of Photodetector Next, an example of a manufacturing method of the photodetector 1 of the sixth embodiment shown in FIG. 16 will be described. FIGS. 22 to 39 are diagrams showing the manufacturing process of the photodetector 1 of the sixth embodiment. First, as shown in FIG. 22, an insulating film 74 is formed on a base substrate 73. The insulating film 74 is a film to be processed into the insulating films 29 and 34 (see FIG. 16). Silicon nitride (Si3N4), for example, can be used as the material for the insulating film 74. Next, a temperature detection material is formed on the insulating film 74. Examples of the temperature detection material include polysilicon (Poly-Si). Next, dry etching is performed to process the temperature detection material to form the temperature detection element 26.

[0052] Next, as shown in FIG. 23 , an insulating film 75 functioning as a sacrificial layer is formed on the insulating film 74. The insulating film 75 is a film to be processed into the insulating film 27 (see FIG. 16 ). Examples of materials for the insulating film 75 include silicon dioxide (SiO ). This embeds the entire temperature detection element 26 within the insulating film 75. Next, CMP is performed to planarize the upper surface of the insulating film 75. Next, dry etching is performed to form a via hole from the upper surface of the insulating film 75 to the temperature detection element 26. Next, a metal film is formed on the upper surface of the insulating film 75. Examples of the metal include tungsten (W). This embeds the metal within the via hole, forming the via 32. Next, dry etching is performed to process the metal film on the upper surface of the insulating film 75, forming the wiring 33. Next, an etching stop film 37 is formed on the upper surface of the insulating film 75. Examples of materials for the etching stop film 37 include silicon carbonitride (SiCN). This embeds the entire wiring 33 within the etching stop film 37. Next, CMP is performed to planarize the upper surface of the etching stop film 37. Next, as shown in FIG. 24, a wiring layer 76 is formed on the etching stop film 37. The wiring layer 76 is a layer that constitutes the upper wiring layer portion 36a (see FIG. 16). At this time, the vias 54 and the wiring 55 are formed in the interlayer insulating film 77 or on the surface of the interlayer insulating film 77 by, for example, a dual damascene process. The vias 54 and the wiring 55 can be made of, for example, copper (Cu).

[0053] Next, as shown in FIG. 25 , a wiring layer 78 is formed on the readout circuit substrate 59 on which the readout circuit 11 (see FIG. 3 ) and the readout circuit 19 (see FIG. 5 ) are formed. The wiring layer 78 is a layer that constitutes the wiring layer lower portion 36 b (see FIG. 16 ). In this case, the vias 54 and the wiring 55 are formed in the interlayer insulating film 79 or on the surface of the interlayer insulating film 79 by, for example, a dual damascene process. The vias 54 and the wiring 55 may be made of, for example, copper (Cu). Next, as shown in FIG. 26 , the base substrate 73 and the readout circuit substrate 59 are bonded. Specifically, the base substrate 73 is inverted and stacked on the readout circuit substrate 59 so that the wiring 55 on the surface of the wiring layer 76 and the wiring 55 on the surface of the wiring layer 78 are bonded. The elements on the base substrate 35 are electrically connected to the readout circuit 19 by bonding the wiring 55 on the surface of the wiring layer 76 and the wiring 55 on the surface of the wiring layer 78. The bonding method may be, for example, bump bonding or Cu-Cu bonding. Subsequently, as shown in FIG.

[0054] Next, dry etching is performed to form a via hole from the upper surface of the insulating film 74 to the wiring 55, as shown in FIG. 28 . Next, metal is filled into the via hole to form the via 54. Wiring 55 is also formed on the surface of the insulating film 74. The via 54 and wiring 55 are used to connect to the sealing substrate 60. Next, dry etching is performed to process the insulating film 74 to form insulating films 29 and 34, as shown in FIG. 29 . Next, films of a light-absorbing material are formed on the insulating films 75 and 29. Methods for forming the light-absorbing material include, for example, CVD, filtration transfer, and application of ink containing the light-absorbing material. Next, dry etching is performed to process the light-absorbing material to form a light-absorbing film 28 having an opening 31. Next, wet etching is performed through the opening 31 to process the insulating film 75, which serves as a sacrificial layer, to form an insulating film 27 surrounding the cavity 30, as shown in FIG. 30 . In this process, the etching gas and structural materials are selected so that the etching selectivity between the insulating film 75 and other films is sufficiently large. As a result, the sensor 10 (first sensor) is formed above the etching stop film 37 .

[0055] Next, as shown in FIG. 31 , an insulating film 61 and wiring 55 are formed on the encapsulation substrate 60 by a damascene process. Examples of materials that can be used for the wiring 55 include copper (Cu) and gold (Au). Next, dry etching or wet etching is performed to form a cavity 53 on the upper surface of the encapsulation substrate 60 from the insulating film 61 side, as shown in FIG. 32 . Next, as shown in FIG. 33 , an anti-reflection layer 58 is formed on the bottom surface of the cavity 53. Examples of the anti-reflection layer 58 that can be used include a dielectric multilayer film and a microfabricated structure such as a moth-eye. Next, as shown in FIG. 34 , the substrate shown in FIG. 30 (a sensor substrate for detecting light in the first wavelength band) and the encapsulation substrate 60 shown in FIG. 33 are vacuum-bonded. Specifically, the encapsulation substrate 60 is inverted and stacked on the substrate shown in FIG. 30 so that the wiring 55 on the surface of the insulating film 34 and the wiring 55 on the surface of the insulating film 61 are bonded. Next, CMP is performed to thin the encapsulation substrate 60 to an appropriate thickness.

[0056] Next, as shown in FIG. 35, an insulating film 80 is formed on the sealing substrate 60 using a CVD method. The insulating film 80 is a layer that forms the lower part of the insulating layer 50 (see FIG. 16). Silicon oxide (SiO2), for example, can be used as the material for the insulating film 80. Next, dry etching is performed to form via holes that penetrate the sealing substrate 60 from the upper surface of the insulating film 80 to the wiring 55 in the insulating film 61, as shown in FIG. 36. Next, an insulating film 81 is formed on the inner wall surface of the via hole using an ALD method. Next, etch-back is performed to remove the insulating film 81 from the bottom surface of the via hole. Next, a metal is embedded in the via hole to form a through electrode 65. An example of the metal is tungsten (W). Next, CMP is performed to planarize the end of the through electrode 65. Next, as shown in FIG. 37, wiring 57 (transparent wiring 57a, transparent via 57b) is formed on the insulating film 80. Specifically, the transparent wiring 57a can be formed by sputtering a transparent conductive film on the insulating film 80, followed by dry etching to process the transparent conductive film. Examples of materials that can be used for the transparent conductive film include indium tin oxide (ITO), zinc oxide (ZnO), indium oxide co-doped with traces of hydrogen (H) and cerium (Ce) (In2O3:Ce,H), and conductive polymers (PEDOT:PSS). The transparent vias 57b can be formed by depositing an insulating film on the insulating film 80, planarizing the insulating film by CMP, forming via holes in the insulating film by dry etching, filling the via holes with a transparent conductive film by sputtering, and planarizing the edges of the transparent conductive film by CMP to form the transparent vias 57b. Repeating this process of forming the transparent wiring 57a and the transparent vias 57b forms the insulating layer 50. Furthermore, a lower electrode 62 a is formed on the surface of the insulating layer 50 for each photoelectric conversion unit 18 (second sensor).

[0057] Next, as shown in FIG. 38, a photoelectric conversion layer 62b is formed on the lower electrode 62a by vapor deposition or sputtering. Examples of materials for the photoelectric conversion layer 62b include organic films and indium gallium arsenide (InGaAs). Next, an upper electrode 62c is formed on the photoelectric conversion layer 62b by vapor deposition or sputtering. Examples of materials for the upper electrode 62c include indium tin oxide (ITO), zinc oxide (ZnO), indium oxide co-doped with trace amounts of hydrogen (H) and cerium (Ce) (In2O3:Ce,H), and conductive polymer (PEDOT:PSS). This forms a sensor array of multiple photoelectric conversion units 18 (second sensors) above each sensor 10 (first sensor). Next, as shown in FIG. 39, a sealing film 63 is formed on the upper electrode 62c by CVD or sputtering. Examples of materials for the sealing film 63 include aluminum oxide (Al2O3) and silicon nitride (Si3N4). Next, an on-chip lens 52 is formed for each photoelectric conversion unit 18 on the sealing film 63. Through this procedure, the photodetector 1 of the sixth embodiment shown in FIG. 16 is completed.

[0058] 11. Ninth Embodiment Next, a photodetector 1 according to a ninth embodiment of the present disclosure will be described. The photodetector 1 according to the ninth embodiment is a modified example of the photodetector 1 according to the third embodiment. FIG. 40 corresponds to FIG. 11 of the third embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the ninth embodiment. In FIG. 40, parts corresponding to those in FIG. 11 are designated by the same reference numerals, and redundant description will be omitted. Note that, in the ninth embodiment, as shown in FIG. 40, the wiring layer 36 between the base substrate 35 and the etching stop film 37 is omitted. Furthermore, the insulating film 29 covers the entire lower surface S4 of the light absorbing film 28, and the opening 31 of the diaphragm 25 penetrates both the light absorbing film 28 and the insulating film 29. Furthermore, a support beam 85 is provided below the temperature detecting element 26 to support the entire lower portion of the temperature detecting element 26. Furthermore, an IR cut filter (denoted by the symbol "IR" in the drawings) is provided as the color filter 46. The IR cut filter "IR" may be, for example, a single-layer filter (see FIG. 40) or a multi-layer filter (see FIG. 57). Fig. 40 illustrates an example in which the IR cut filter "IR" is a single-layer filter, while Fig. 57 illustrates an example in which the IR cut filter "IR" is a multi-layer filter in which a filter R that transmits red light is laminated on the IR cut filter "IR".

[0059] As shown in FIGS. 40 and 41 , the photodetector 1 according to the ninth embodiment further includes an optical element 86 in addition to the configuration of the photodetector 1 according to the third embodiment shown in FIG. 11 . The optical element 86 is formed in at least one of the plurality of openings 31 in the light absorbing film 28. FIG. 41 illustrates a case where the optical element 86 is formed inside all of the openings 31. FIG. 41 is a diagram showing the planar configuration of the THz pixel 2. The optical element 86 functions as a condenser lens that condenses light L (see FIG. 40 ) incident into the opening 31 onto the photoelectric conversion unit 18. As shown in FIG. 42 , for example, the optical element 86 includes a first optical element 87 that condenses light L (see FIG. 40 ) incident into the opening 31 onto the photoelectric conversion unit 18, and a second optical element 88 that connects the first optical element 87 to the inner circumferential surface of the opening 31 so that the first optical element 87 is supported at a position spaced apart from the inner circumferential surface of the opening 31 toward the interior of the opening 31. FIG. 42 is a diagram showing the cross-sectional structure of the optical element 86 taken along line DD in FIG.

[0060] The first optical element 87 is disposed inside a portion of the opening 31 of the diaphragm 25 that penetrates the insulating film 29, and has a columnar shape extending in the direction of penetration of the opening 31. Figures 40 and 42 illustrate an example in which the first optical element 84 is a rectangular parallelepiped whose light incident surface (hereinafter also referred to as the "top surface S12") is a square, flat surface. The square shape of the top surface S12 is smaller than the opening shape of the opening 31. The first optical element 87 is disposed at the center of the opening 31 so that the side surface of the first optical element 87 faces the inner circumferential surface of the opening 31 at a predetermined distance. This forms a through-hole (hereinafter also referred to as a "release hole 89") with a constant width between the side surface of the first optical element 87 and the inner circumferential surface of the opening 31. Furthermore, the first optical element 87 may be formed, for example, from a high-refractive-index material having a refractive index higher than that of the medium surrounding the first optical element 87 (e.g., air). Examples of suitable materials include an insulator such as silicon nitride (Si3N4). Using a high-refractive-index material can slow the speed of light traveling through the first optical element 87 compared to the speed of light traveling through air. This allows the wavefront of the light L passing through the opening 31 to be bent toward the center of the first optical element 87. Furthermore, by bending the wavefront of the light L, the first optical element 87 can focus the light L passing through the opening 31 toward the center of the opening 31, allowing it to efficiently enter the photoelectric conversion unit 18. Furthermore, the length of the first optical element 87 in its film thickness direction (the same direction as the film thickness direction of the insulating film 29 and the same direction as the penetration direction of the opening 31) is an integer multiple of the target wavelength detected by the photoelectric conversion unit 18. In FIG. 40 , the length is the same as the thickness of the insulating film 29. The longer length of the first optical element 87 increases the phase difference of the light L, allowing the wavefront of the light L passing through the opening 31 to be curved more significantly, resulting in a stronger bending of the light L. Therefore, the light L passing through the first optical element 87 can be focused more efficiently.

[0061] As shown in FIG. 42 , the second optical element 88 is disposed between the first optical element 87 and the inner circumferential surface of the opening 31 so that the outer shape of the optical element 86 when viewed from the penetrating direction of the opening 31 is point-symmetric with respect to the center of the opening 31. FIG. 42 illustrates an example in which multiple second optical elements 88 (hereinafter also referred to as "88 1, 88 2") are disposed on a line 90 extending in the row direction through the center of the opening 31, and in regions on opposite sides of the first optical element 87 (regions between the first optical element 87 and the inner circumferential surface of the opening 31). The second optical elements 88 1, 88 2 are rectangular parallelepipeds with their light incident surfaces being band-shaped flat surfaces. The second optical element 88 is made of the same material (high refractive index material) as the first optical element 87. With the above configuration, the second optical element 88, like the first optical element 87, has the function of bending and concentrating light L. Therefore, the light condensing position 91 of the entire optical element 86 (first optical element 87, second optical element 88) may move toward the second optical element 88 and deviate from the position directly below the center of the opening 31. In contrast, in the ninth embodiment, the second optical elements 88 (881, 882) are arranged so that the outer shape of the optical element 86 is point-symmetric. This makes it possible to maintain the light condensing position 91 of the optical element 86 at a position directly below the center of the opening 31. Furthermore, the second optical element 88 is arranged at the same depth as the first optical element 87 (i.e., inside the portion of the opening 31 of the diaphragm 25 that penetrates the insulating film 29). Furthermore, the length of the second optical element 88 in the film thickness direction (the same direction as the film thickness direction of the insulating film 29, and the same direction as the penetration direction of the opening 31) is the same as the length of the first optical element 87.

[0062] Furthermore, the first optical element 87, the second optical element 88, and the insulating film 29 are continuously and integrally formed from the same material. That is, the insulating film 29 is formed from the same high-refractive index material (e.g., silicon nitride) as the first optical element 87 and the second optical element 88. This allows, for example, as shown in FIG. 43 , during the manufacturing of the photodetector 1, the optical element 86 can be formed simultaneously in the process of forming the opening 31 in the insulating film 29. This prevents an increase in the number of processes associated with forming the optical element 86. FIG. 43 is a diagram illustrating the process of forming the opening 31. Specifically, in the process of forming the opening 31, first, a flat layer (without the opening 31 or release hole 89) is formed in which the first optical element 87, the second optical element 88, the insulating film 29, and the light-absorbing film 28 are integrated. Next, dry etching is performed to form the opening 31 and the release hole 89 in the flat layer, as shown in FIG. 43 , thereby forming the first optical element 87, the second optical element 88, the insulating film 29, and the light-absorbing film 28. This allows the opening 31 and the optical element 86 to be formed simultaneously. Furthermore, by simultaneously forming the opening 31 and the release hole 89, wet etching can be performed through the opening 31 and the release hole 89 in a subsequent step. As shown in FIG. 44 , the cavity 30 can be formed in the insulating film 27 (i.e., the sacrificial layer) before the cavity 30 is formed. FIG. 44 illustrates the process of forming the cavity 30. Furthermore, anti-reflection films 96 and 97 are disposed on the upper surface S12 and the lower surface S13 of the first optical element 87 and the second optical element 88, respectively. This allows reflection of light L at the interfaces between the first optical element 87 and the second optical element 88 and the air to be suppressed. The anti-reflection films 96 and 97 can be, for example, a dielectric multilayer film including two or more dielectric films with different refractive indices.

[0063] The photodetector 1 according to the ninth embodiment having the above configuration is configured to include an optical element 86 that is disposed in at least one of the multiple openings 31 and focuses light L incident into the opening 31 onto the photoelectric conversion unit 18. Therefore, by focusing light L into the photoelectric conversion unit 18 by the optical element 86, the light L that has passed through the opening 31 can be efficiently incident on the photoelectric conversion unit 18. This improves the sensitivity of the photoelectric conversion unit 18 (second sensor). Furthermore, in the photodetector 1 according to the ninth embodiment, the optical element 86 is configured to include a first optical element 87 that focuses light L incident into the opening 31 onto the photoelectric conversion unit 18, and a second optical element 88 formed on the inner circumferential surface of the opening 31 so that the first optical element 87 is supported at a position spaced apart from the inner circumferential surface of the opening 31 toward the interior of the opening 31. This makes it possible to easily change the external shape of the optical element 86 by changing the position, number, shape, etc. of the first optical element 87 and the second optical element 88, and to easily adjust the focusing position 91 of the optical element 86.

[0064] In addition to the outer shape shown in Fig. 42, the outer shape of the optical element 86 (i.e., the point-symmetric outer shape) can also be the outer shape shown in Fig. 45 to Fig. 48. Fig. 45 to Fig. 48 are diagrams showing the planar configuration of the outer shape of a modified optical element 86. In Fig. 45, the second optical element 88 includes second optical elements 883 and 884, and the second optical element 883 extends upward (in the column direction) from the upper left end of the first optical element 87 shown in Fig. 45, and the second optical element 884 extends downward (in the column direction) from the lower right end of the first optical element 87 shown in Fig. 45. Furthermore, in Figure 46, in addition to the second optical elements 883 and 884 described above, second optical elements 885 and 886 are provided, and the second optical element 885 extends in the right direction (row direction) from the upper right end of the first optical element 87 shown in Figure 46, and the second optical element 886 extends in the left direction (row direction) from the lower left end of the first optical element 87 shown in Figure 46.

[0065] 47, the second optical element 88 includes second optical elements 88 and 88, and the second optical element 88 extends in an upper left direction (diagonal direction) from the upper left corner of the first optical element 87 shown in Fig. 47 to the upper left corner of the inner peripheral surface of the opening 31, and the second optical element 88 extends in a lower right direction (diagonal direction) from the lower right corner of the first optical element 87 shown in Fig. 47 to the lower right corner of the inner peripheral surface of the opening 31. Also, in Fig. 48, in addition to the second optical elements 88 and 88, second optical elements 88 and 88 10 The second optical element 88 extends in the upper right direction (diagonal direction) from the upper right corner of the first optical element 87 shown in FIG. 48 to the upper right corner of the inner circumferential surface of the opening 31, and the second optical element 88 10 48 extends in a lower left direction (diagonal direction) from the lower left corner of the first optical element 87 to the lower left corner of the inner circumferential surface of the opening 31. Furthermore, in the ninth embodiment, the wiring layer 36 shown in FIG. 11 and the like is omitted, and the metal mesh made of wires 42 is omitted, but this is not limiting. For example, the wiring layer 36 shown in FIG. 11 and the like may be formed between the base substrate 35 and the etching stop film 37, and a narrow-pitch metal mesh (grating) may be formed by the wires 42 of the wiring layer 36.

[0066] 12. Tenth Embodiment Next, a photodetector 1 according to a tenth embodiment of the present disclosure will be described. The photodetector 1 according to the tenth embodiment is a modified example of the photodetector 1 according to the ninth embodiment. Fig. 49 is a view corresponding to Fig. 42 of the ninth embodiment, and is a diagram showing a cross-sectional configuration of an optical element 86 according to the tenth embodiment. In Fig. 49, parts corresponding to Fig. 42 are assigned the same reference numerals, and duplicated explanations will be omitted. In the photodetector 1 according to the tenth embodiment, as shown in Fig. 49, the outer shape of the optical element 86 when viewed from the penetrating direction of the opening 31 is asymmetrical with respect to the center of the opening 31. In Fig. 49, there is one second optical element 88, and the one second optical element 88 (hereinafter referred to as "88") 11 ") is located in a region on a line 92 that passes through the center of the opening 31 and extends in the row direction, in the region between the first optical element 87 and the inner circumferential surface of the opening 31. This allows the light condensing position 91 of the optical element 86 to be aligned with the second optical element 88 (8811 ) and can be set to a position displaced from directly below the center of the opening 31. Therefore, for example, even if the center of the photoelectric conversion unit 18 is displaced from the position directly below the center of the opening 31 due to an increase in the size of the photoelectric conversion unit 18, the light-condensing position 91 of the optical element 86 can be set at the center of the photoelectric conversion unit 18.

[0067] In addition to the outer shape shown in FIG. 49, the outer shapes shown in FIGS. 50 and 51 can also be used as the outer shape of the optical element 86 (i.e., the asymmetric outer shape). FIGS. 50 and 51 are diagrams showing the planar configuration of the outer shape of the optical element 86 of a modified example. In FIG. 50, the second optical element 88 (88 12 ) extends in an upper left direction (diagonal direction) from the upper left corner of the first optical element 87 shown in Fig. 50 to the upper left corner of the inner circumferential surface of the opening 31. Also, in Fig. 51, in the optical element 86 shown in Fig. 46, the first optical element 87 is moved to the lower right, and the length of the second optical element 88 is expanded or contracted in accordance with this movement.

[0068] 13. Eleventh Embodiment Next, a photodetector 1 according to an eleventh embodiment of the present disclosure will be described. The photodetector 1 according to the eleventh embodiment is a modified example of the photodetector 1 according to the ninth embodiment. Fig. 52 is a diagram corresponding to Fig. 42 of the ninth embodiment, and is a diagram showing a cross-sectional configuration of an optical element 86 according to the eleventh embodiment. In Fig. 52, parts corresponding to Fig. 42 are assigned the same reference numerals, and duplicated explanations will be omitted. Note that in the eleventh embodiment, as shown in Fig. 52, four photoelectric conversion units 18 arranged in a 2 × 2 array are disposed for each opening 31 at a position directly below the opening 31.

[0069] In the photodetector 1 according to the eleventh embodiment, as shown in FIG. 52 , four optical elements 86 are arranged in a 2×2 array within the opening 31 so that an optical element 86 is formed for each photoelectric conversion unit 18. In FIG. 52 , each optical element 86 is arranged such that the first optical element 87 overlaps the center of the photoelectric conversion unit 18 in a plan view, and the second optical element 88 extends in the row or column direction. This allows light L (see FIG. 40 ) passing through the opening 31 to be efficiently incident on each photoelectric conversion unit 18, thereby further improving the sensitivity of each photoelectric conversion unit 18. Note that, in addition to the pattern shown in FIG. 52 , the outer shape of the optical elements 86 (the positions, number, etc. of the second optical elements 88) can also employ the patterns shown in, for example, FIGS. 53 to 56 .

[0070] 14. Twelfth Embodiment Next, a photodetector 1 according to a twelfth embodiment of the present disclosure will be described. The photodetector 1 according to the twelfth embodiment is a modified example of the photodetector 1 according to the ninth embodiment. FIG. 57 is a diagram corresponding to FIG. 40 of the ninth embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the twelfth embodiment. In FIG. 57, parts corresponding to FIG. 40 are assigned the same reference numerals, and redundant description will be omitted. In the photodetector 1 according to the twelfth embodiment, as shown in FIG. 57, a step portion 93 is formed on the upper surface S12 of the first optical element 87, which decreases the surface height of the upper surface S12 in a step-like manner toward the outer periphery of the first optical element 87. That is, the upper surface S12 of the first optical element 87 has a stepped pyramid shape in which the surface height changes in a step-like manner. As shown in FIG. 58, the step portion 93 is configured so that the corners of the step are inscribed in a semicircle having a radius r that is an integer multiple of the target wavelength. FIGS. 57 and 58 illustrate a case in which the number of steps formed by the step portion 93 is "1." Forming the step portion 93 increases the area of ​​the upper surface S12 (light incident surface) of the first optical element 87. Also, the light L (see FIG. 40 ) passing through the step portion 93 (outer periphery side) can be bent toward the center of the first optical element 87. Therefore, the light L passing through the opening 31 can be more efficiently collected. FIG. 58 is an enlarged view showing the cross-sectional configuration of the step portion 93.

[0071] 15. Thirteenth Embodiment Next, a photodetector 1 according to a thirteenth embodiment of the present disclosure will be described. The photodetector 1 according to the thirteenth embodiment is a modified example of the photodetector 1 according to the ninth embodiment. FIG. 59 is a diagram corresponding to FIG. 40 of the ninth embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the thirteenth embodiment. In FIG. 59 , parts corresponding to FIG. 40 are assigned the same reference numerals, and redundant description will be omitted. In the photodetector 1 according to the thirteenth embodiment, as shown in FIG. 59 , a metal is used as the material of the optical element 86 (first optical element 87, second optical element 88). Examples of the metal include the same metal as the material of the metal film 94 (described below). The positions, number, shape, and the like of the first optical element 87 and the second optical element 88 of the optical element 86 are set so that the optical element 86 functions as a metalens that focuses light L (see FIG. 40 ) incident on the opening 31 onto the photoelectric conversion unit 18.

[0072] The photodetector 1 according to the thirteenth embodiment further includes a metal film 94 as a component constituting the diaphragm 25. The metal film 94 is disposed between the light absorbing film 28 and the insulating film 29 and covers the entire lower surface S4 of the light absorbing film 28. The insulating film 29 is formed only below the outer edge of the metal film 94. The opening 31 of the diaphragm 25 penetrates both the light absorbing film 28 and the metal film 94. The optical element 86 is disposed within the portion of the opening 31 of the diaphragm 25 that penetrates the metal film 94 (the portion that penetrates the light absorbing film 28 and the portion that penetrates the metal film 94). The metal film 94 may be made of, for example, an infrared-reflecting material capable of reflecting infrared rays. Examples of infrared-reflecting materials include metals such as aluminum (Al), tungsten (W), gold (Au), and platinum (Pt). This allows infrared light (light in the first wavelength band) that has passed through the light absorbing film 28 to be reflected back to the light absorbing film 28, thereby improving the sensitivity of the sensor 10 (THz pixel 2). Furthermore, the metal film 94 is formed continuously and integrally with the first optical element 87 and the second optical element 88. Therefore, for example, during the manufacture of the light detection device 1, the optical element 86 can be formed simultaneously in the process of forming the opening 31 in the metal film 94. This makes it possible to suppress an increase in the number of processes involved in forming the optical element 86.

[0073] 16. Fourteenth Embodiment Next, a photodetector 1 according to a fourteenth embodiment of the present disclosure will be described. The photodetector 1 according to the fourteenth embodiment is a modified example of the photodetector 1 according to the ninth embodiment. FIG. 60 is a diagram corresponding to FIG. 40 of the ninth embodiment and illustrates a cross-sectional configuration of the photodetector 1 according to the fourteenth embodiment. In FIG. 60, parts corresponding to FIG. 40 are assigned the same reference numerals, and redundant description will be omitted. As shown in FIG. 60, the photodetector 1 according to the thirteenth embodiment further includes an on-chip lens 48 in addition to the configuration of the photodetector 1 according to the ninth embodiment shown in FIG. 40. The on-chip lens 48 is disposed between the optical element 86 and the photoelectric conversion unit 18 and focuses light incident on the on-chip lens 48 onto the photoelectric conversion unit 18. FIG. 60 illustrates a case in which the on-chip lens 48 is disposed on the light incident surface (hereinafter also referred to as the "upper surface S14") of the color filter 46. This allows the light focused by the optical element 86 to be further focused by the on-chip lens 48, and allows the light that has passed through the opening 31 to be incident on the photoelectric conversion section 18 more efficiently.

[0074] 17. Fifteenth Embodiment Next, a photodetector 1 according to a fourteenth embodiment of the present disclosure will be described. The photodetector 1 according to the fifteenth embodiment is a modified example of the photodetector 1 according to the ninth embodiment. Fig. 61 is a diagram corresponding to Fig. 40 of the ninth embodiment, and shows a cross-sectional configuration of the photodetector 1 according to the fifteenth embodiment. In Fig. 61, parts corresponding to Fig. 40 are assigned the same reference numerals, and duplicated explanations will be omitted. In the photodetector 1 according to the fourteenth embodiment, as shown in Fig. 61, an optical element 86 is disposed inside a portion of the opening 31 of the diaphragm 25 that penetrates the light absorbing film 28. Fig. 61 illustrates an example in which a plano-convex lens is used as the optical element 86.

[0075] 18. Sixteenth Embodiment The light detection device 1 as described above can be applied to various electronic devices, such as imaging systems such as infrared cameras, and other devices with imaging functions.

[0076] FIG. 62 is a diagram showing the functional configuration of an electronic device 101 according to a sixteenth embodiment. As shown in FIG. 62, the electronic device 101 includes an imaging optical system 102 including a lens group and the like, an imaging unit 103, a DSP (Digital Signal Processor) circuit 104, a frame memory 105, a display device 106, a recording device 107, an operation system 108, and a power supply system 109. The DSP circuit 104, the frame memory 105, the display device 106, the recording device 107, the operation system 108, and the power supply system 109 are interconnected via a bus line 110. The imaging optical system 102 captures incident light (image light) from a subject and forms an image on the imaging surface of the imaging unit 103. The imaging unit 103 converts the amount of incident light formed on the imaging surface by the imaging optical system 102 into an electrical signal on a pixel-by-pixel basis and outputs the signal as a pixel signal. The photodetector 1 according to any of the first to fifteenth embodiments is applied to the imaging unit 103. The DSP circuit 104 performs general camera signal processing, such as white balance processing, demosaic processing, and gamma correction processing.

[0077] The frame memory 105 is used to store data as needed during the signal processing performed by the DSP circuit 104. The display device 106 is a panel-type display device such as a liquid crystal display device or an organic EL (Electro Luminescence) display device, and displays moving or still images captured by the imaging unit 103. The recording device 107 records the moving or still images captured by the imaging unit 103 on a recording medium such as a portable semiconductor memory, an optical disk, or an HDD (Hard Disk Drive). The operation system 108 issues operation commands for various functions of the electronic device 101 under user operation. The power supply system 109 appropriately supplies various power sources to the DSP circuit 104, frame memory 105, display device 106, recording device 107, and operation system 108. The electronic device 101 configured as described above includes any of the photodetector devices 1 according to the first to fifteenth embodiments described above as the imaging unit 103. Therefore, applying the photodetector device 1 to the imaging unit 103 can improve imaging performance.

[0078] The present technology may also be configured as follows: (1) An optical detection sensor comprising: a first sensor that detects light in a first wavelength band; and a plurality of second sensors that detect light in a second wavelength band different from the first wavelength band, wherein light receiving units of the plurality of second sensors are two-dimensionally arranged in a matrix at positions overlapping with the light receiving units of the first sensor when viewed from a direction normal to a light incident surface of the light receiving units of the first sensor. (2) The optical detection sensor according to (1), comprising: wiring that is arranged on an opposite surface of the light receiving units of the first sensor opposite to the light incident surface, the wiring being connected to pixel transistors that output pixel signals based on outputs of the second sensors, and wherein specific wiring that is at least a part of the wiring is arranged at a position overlapping with the light receiving units of the first sensor when viewed from a direction normal to the light incident surface. (3) The light detection sensor according to (2), wherein the second sensor has a photoelectric conversion unit formed on a base substrate and performing photoelectric conversion on light in the second wavelength band, and the first sensor has a diaphragm disposed at a position separated from the base substrate across a cavity and including a light absorbing film that absorbs light in the first wavelength band and generates heat, and a temperature detection element that detects a temperature difference between the light absorbing film and a periphery of the light absorbing film. (4) The light detection sensor according to (2) or (3), wherein the wavelength of the second wavelength band is shorter than the wavelength of the first wavelength band. (5) The light detection sensor according to any of (2) to (4), wherein the second sensor forms a second sensor array two-dimensionally arranged in a matrix, and the wiring includes a plurality of first wirings extending in a row direction of the second sensor array and a plurality of second wirings extending in a column direction, and at least some of the first wirings and the second wirings are arranged in a lattice pattern when viewed from a normal direction to the light incident surface. (6) The optical detection sensor according to any one of (2) to (5), wherein the first sensor and the second sensor are formed on different substrates, and at least a part of a bonding interface between the substrate on which the first sensor is formed and the substrate on which the second sensor is formed is bonded by metal bonding.(7) The light detection sensor according to (3), wherein the diaphragm has a plurality of openings penetrating the diaphragm in a thickness direction, and the pitch of the openings is n times (n is an integer greater than or equal to 1) the pitch of the photoelectric conversion units. (8) The light detection sensor according to (3) or (7), wherein the second sensor is located on a surface opposite to the light incident surface of the light absorbing film. (9) The light detection sensor according to (8), wherein at least a portion of the specific wiring is made of a material that transmits light of the second wavelength band and reflects light of the first wavelength band. (10) The light detection sensor according to (3), wherein the second sensor is located on the light incident surface side of the light absorbing film, and a cavity that is a recess that accommodates the diaphragm is formed on a lower surface of a substrate on which the second sensor is formed, and further comprising a readout circuit board on which a readout circuit is formed, the readout circuit board being disposed on a surface opposite to the light incident surface side of the light absorbing film, and vias and wiring formed on side walls of the cavity that electrically connect the second sensor and the readout circuit. (11) The light detection sensor according to (10), further comprising: predetermined wiring that is wiring arranged between the second sensor and the light absorption film, wherein at least a portion of the predetermined wiring is made of a material that transmits light in the first wavelength band. (12) The light detection sensor according to (10) or (11), wherein the first sensor and the second sensor are formed on different substrates, and a space accommodating the first sensor is vacuum-sealed by the substrate on which the second sensor is formed. (13) The light detection sensor according to (12), wherein the first sensors are two-dimensionally arranged in a matrix to form a pixel array unit, and an annular region that continuously surrounds the outer periphery of the pixel array unit when viewed from the normal direction of a light incident surface of the first sensor, of a bonding interface between the substrate on which the first sensor is formed and the substrate on which the second sensor is formed is bonded by metal bonding.(14) The light detection sensor according to (1), wherein the second sensor has a photoelectric conversion unit formed on a base substrate and performing photoelectric conversion on light in the second wavelength band, and the first sensor has a diaphragm located on the light incident surface side of the base substrate, arranged at a position separated from the base substrate across a cavity, and including a light absorbing film that absorbs light in the first wavelength band and generates heat, and a temperature detection element that detects a temperature difference between the light absorbing film and a periphery of the light absorbing film, and the diaphragm has a plurality of openings penetrating in the thickness direction of the diaphragm, and an optical element is arranged in at least one of the plurality of openings and focuses light that has entered the opening onto the photoelectric conversion unit. (15) The light detection sensor according to (14), wherein the optical element includes: a first optical element that focuses light incident into the opening onto the photoelectric conversion unit; and a second optical element that connects the first optical element to the inner circumferential surface of the opening so that the first optical element is supported at a position spaced apart from the inner circumferential surface of the opening toward the interior of the opening. (16) The light detection sensor according to (15), wherein the outer shape of the optical element when viewed from the penetrating direction of the opening is point-symmetric with respect to the center of the opening. (17) The light detection sensor according to (15), wherein the outer shape of the optical element when viewed from the penetrating direction of the opening is asymmetric with respect to the center of the opening. (18) The light detection sensor according to any of (15) to (17), wherein the first optical element has a columnar shape extending in the penetrating direction of the opening, and wherein the light incident surface of the first optical element is a flat surface. (19) The light detection sensor according to any one of (15) to (17), wherein the first optical element has a columnar shape extending in a penetrating direction of the opening, and a step portion is formed on a light incident surface of the first optical element such that a surface height of the light incident surface is lowered in a stepped manner toward an outer periphery of the first optical element. (20) The light detection sensor according to any one of (14) to (19), wherein a material of the optical element is an insulator or a metal.(21) The light detection sensor according to (20), wherein the diaphragm further includes an insulating film covering the entire surface of the light absorbing film opposite to the light incident surface, and the optical element is made of the same material as the insulating film and is disposed inside a portion of the opening of the diaphragm that penetrates the insulating film. (22) The light detection sensor according to (20), wherein the diaphragm further includes a metal film disposed between the light absorbing film and the temperature detection element, and the optical element is made of the same material as the metal film and is disposed inside a portion of the opening of the diaphragm that penetrates the metal film. (23) The light detection sensor according to any of (14) to (22), further comprising an on-chip lens between the optical element and the photoelectric conversion unit. (24) A photodetector device comprising: a first sensor that detects light in a first wavelength band, and a plurality of second sensors that detect light in a second wavelength band different from the first wavelength band, wherein light receiving units of the plurality of second sensors have light detection sensors that are two-dimensionally arranged in a matrix at positions that overlap with the light receiving units of the first sensor when viewed from the normal direction of the light incident surface of the light receiving units of the first sensor, and the light detection sensors form a sensor array that is two-dimensionally arranged in a matrix. (25) An electronic device comprising: a photodetector device comprising: a first sensor that detects light in a first wavelength band, and a plurality of second sensors that detect light in a second wavelength band different from the first wavelength band, wherein light receiving units of the plurality of second sensors have light detection sensors that are two-dimensionally arranged in a matrix at positions that overlap with the light receiving units of the first sensor when viewed from the normal direction of the light incident surface of the light receiving units of the first sensor, and the light detection sensors form a sensor array that is two-dimensionally arranged in a matrix.

[0079] 1...photodetector, 2...THz pixel, 3...visible light pixel, 4...pixel array section, 5...vertical drive section, 6...ADC, 7...horizontal drive section, 8...signal processing circuit, 9...control section, 10...sensor, 11...readout circuit, 12...pixel array section, 13...vertical drive section, 14...ADC, 15...horizontal drive section, 16...signal processing circuit, 17...control section, 18...photoelectric conversion section, 18a...well region, 18b...second conductivity type region, 19...readout circuit, 20...transfer transistor, 21...reset transistor, 22...amplification transistor, 23...selection transistor, 2 5...diaphragm, 26...temperature detection element, 27...insulating film, 27a...upper insulating film, 27b...lower insulating film, 28...light absorbing film, 29...insulating film, 30...cavity, 31...opening, 32...via, 33...wiring, 34...insulating film, 35...base substrate, 36...wiring layer, 36a...upper wiring layer, 36b...lower wiring layer, 37...etching stop film, 38...photoelectric conversion section region, 39...THz circuit region, 40...second wiring region, 41...interlayer insulating film, 42...wiring, 43...first wiring region, 44...via, 45...wiring, 46...color filter, 47...planarizing film, 48...On-chip lens, 49...Waveguide, 50...Insulating layer, 51...Anti-reflection film, 52...On-chip lens, 53...Cavity, 54...Via, 55...Wiring, 56...Upper region, 57...Wiring, 57a...Transparent wiring, 57b...Transparent via, 58...Anti-reflection layer, 59...Readout circuit board, 60...Sealing substrate, 61...Insulating film, 62a...Lower electrode, 62b...Photoelectric conversion layer, 62c...Upper electrode, 63...Sealing film, 65...Through electrode, 66...Color filter, 67...Planarization film, 68...Logic circuit board, 69...Sensor control unit, 70...ISP, 71...Subject , 72...light source, 73...base substrate, 74...insulating film, 75...insulating film, 76...wiring layer, 77...interlayer insulating film, 78...wiring layer, 79...interlayer insulating film, 80...insulating film, 81...insulating film, 84...first optical element, 85...support beam, 86...optical element, 87...first optical element, 88...second optical element, 89...release hole, 90...straight line, 91...light focusing position, 92...straight line, 93...step portion, 94...metal film, 95...metal bonding region, 96...anti-reflection film, 97...anti-reflection film, 100...first substrate, 200...second substrate, 300...third substrate, 500...light detection sensor

Claims

1. A light detection sensor comprising: a first sensor that detects light in a first wavelength band; and a plurality of second sensors that detect light in a second wavelength band different from the first wavelength band, wherein the light receiving sections of the plurality of second sensors are two-dimensionally arranged in a matrix at positions that overlap the light receiving sections of the first sensor when viewed from the normal direction of the light incident surface of the light receiving sections of the first sensor.

2. The light detection sensor according to claim 1, further comprising wiring arranged on the opposite side of the light receiving part of the first sensor to the light incident surface, the wiring being connected to a pixel transistor that outputs a pixel signal based on the output of the second sensor, and wherein specific wiring that is at least a part of the wiring is arranged in a position that overlaps with the light receiving part of the first sensor when viewed from the normal direction of the light incident surface.

3. The optical detection sensor according to claim 2, wherein the second sensor has a photoelectric conversion section formed on a base substrate and performing photoelectric conversion on light in the second wavelength band, and the first sensor has a diaphragm arranged at a position separated from the base substrate across a cavity and including a light absorbing film that absorbs light in the first wavelength band and generates heat, and a temperature detection element that detects the temperature difference between the light absorbing film and the periphery of the light absorbing film.

4. The light detection sensor according to claim 2, wherein the wavelength of the second wavelength band is shorter than the wavelength of the first wavelength band.

5. The light detection sensor according to claim 2, wherein the second sensors form a second sensor array arranged two-dimensionally in a matrix, the wiring has a plurality of first wirings extending in the row direction of the second sensor array and a plurality of second wirings extending in the column direction, and at least some of the first wirings and second wirings are arranged so as to form a lattice pattern when viewed from the normal direction of the light incident surface.

6. The optical detection sensor according to claim 2, wherein the first sensor and the second sensor are formed on different substrates, and at least a portion of the bonding interface between the substrate on which the first sensor is formed and the substrate on which the second sensor is formed is bonded by metal bonding.

7. The optical detection sensor according to claim 3, wherein the diaphragm has a plurality of openings penetrating the diaphragm in the thickness direction, and the pitch of the openings is n times (n is an integer of 1 or greater) the pitch of the photoelectric conversion elements.

8. The light detection sensor according to claim 3, wherein the second sensor is located on the surface of the light absorbing film opposite to the light incident surface.

9. The light detection sensor according to claim 8, wherein at least a portion of the specific wiring is made of a material that transmits light in the second wavelength band and reflects light in the first wavelength band.

10. The light detection sensor according to claim 3, wherein the second sensor is located on the light incident surface side of the light absorbing film, a cavity that is a recess for accommodating the diaphragm is formed on the underside of a substrate on which the second sensor is formed, and further comprising a readout circuit board on the surface opposite to the light incident surface side of the light absorbing film and on which a readout circuit is formed, and vias and wiring formed on the side walls of the cavity electrically connecting the second sensor and the readout circuit.

11. The light detection sensor according to claim 10, further comprising a predetermined wiring that is a wiring arranged between the second sensor and the light absorbing film, at least a portion of the predetermined wiring being made of a material that transmits light in the first wavelength band.

12. The optical detection sensor according to claim 10, wherein the first sensor and the second sensor are formed on different substrates, and the space in which the first sensor is housed is vacuum-sealed by the substrate on which the second sensor is formed.

13. The optical detection sensor according to claim 12, wherein the first sensors are arranged two-dimensionally in a matrix to form a pixel array section, and an annular region of the bonding interface between the substrate on which the first sensor is formed and the substrate on which the second sensor is formed, which continuously surrounds the outer periphery of the pixel array section when viewed from the normal direction of the light incident surface of the first sensor, is bonded by metal bonding.

14. The light detection sensor according to claim 1, wherein the second sensor has a photoelectric conversion unit formed on a base substrate and performing photoelectric conversion on light in the second wavelength band, and the first sensor has a diaphragm located on the light incident surface side of the base substrate, spaced apart from the base substrate across a cavity, and including a light absorbing film that absorbs light in the first wavelength band and generates heat, and a temperature detection element that detects the temperature difference between the light absorbing film and a periphery of the light absorbing film, the diaphragm having a plurality of openings penetrating in the thickness direction of the diaphragm, and an optical element disposed in at least one of the plurality of openings and focusing light that has entered the opening onto the photoelectric conversion unit.

15. The optical detection sensor described in claim 14, wherein the optical element comprises: a first optical element that focuses light incident into the opening onto the photoelectric conversion unit; and a second optical element that connects the first optical element to the inner surface of the opening so that the first optical element is supported at a position spaced apart from the inner surface of the opening toward the interior of the opening.

16. The optical detection sensor according to claim 15, wherein the external shape of the optical element when viewed from the penetrating direction of the opening is point-symmetric with respect to the center of the opening.

17. The optical detection sensor according to claim 15, wherein the external shape of the optical element when viewed from the penetrating direction of the opening is asymmetrical with respect to the center of the opening.

18. The optical detection sensor according to claim 15, wherein the first optical element has a cylindrical shape extending in the penetrating direction of the opening, and the light incident surface of the first optical element is a flat surface.

19. The optical detection sensor described in claim 15, wherein the first optical element has a cylindrical shape extending in the penetrating direction of the opening, and a step portion is formed on the light incident surface of the first optical element so that the surface height of the light incident surface is lowered in a stepped manner toward the outer periphery of the first optical element.

20. The light detection sensor according to claim 14, wherein the material of the optical element is an insulator or a metal.

21. The light detection sensor according to claim 20, wherein the diaphragm further includes an insulating film covering the entire surface of the light absorbing film opposite the light incident surface, and the optical element is formed from the same material as the insulating film and is disposed inside the portion of the opening of the diaphragm that penetrates the insulating film.

22. The optical detection sensor according to claim 20, wherein the diaphragm further includes a metal film disposed between the light absorbing film and the temperature detection element, and the optical element is formed from the same material as the metal film and is disposed inside a portion of the opening of the diaphragm that passes through the metal film.

23. The light detection sensor according to claim 14, further comprising an on-chip lens between the optical element and the photoelectric conversion unit.

24. A photodetection device comprising a first sensor that detects light in a first wavelength band and a plurality of second sensors that detect light in a second wavelength band different from the first wavelength band, wherein the light receiving sections of the plurality of second sensors are arranged two-dimensionally in a matrix at positions that overlap the light receiving sections of the first sensor when viewed from the normal direction of the light incident surface of the light receiving sections of the first sensor, and the light detecting sensors form a sensor array arranged two-dimensionally in a matrix.

25. Electronic equipment comprising a photodetector device comprising a first sensor that detects light in a first wavelength band and a plurality of second sensors that detect light in a second wavelength band different from the first wavelength band, wherein the light receiving sections of the plurality of second sensors have photodetection sensors arranged two-dimensionally in a matrix at positions that overlap the light receiving sections of the first sensor when viewed from the normal direction of the light incident surface of the light receiving sections of the first sensor, and the photodetection sensors form a sensor array arranged two-dimensionally in a matrix.

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