Display device and electronic equipment

Abstract

Provided is a display device capable of suppressing reflection of near-infrared light at an electrode in the vicinity of a display area.　The display device comprises the electrode provided in the vicinity of the display area, and a black sealing portion that covers the electrode such that, in a plan view, a part of the electrode protrudes beyond the sealing portion. The electrode has a transmission portion capable of transmitting near-infrared light at the part protruding beyond the sealing portion in a plan view.

Description

Display devices and electronic devices

[0001] The present disclosure relates to a display device and an electronic device including the same.

[0002] Some display devices have electrodes around the display area. In these types of display devices, there is a risk that visibility may be impaired if external light is reflected by the electrodes. For this reason, a technology has been studied that suppresses external light reflection by the electrodes by providing a light-shielding layer above the electrodes.

[0003] For example, Patent Document 1 discloses that a protective section (light-shielding layer) made up of a stack of a first red layer, a second green layer, and a third blue layer is arranged so as to overlap the peripheral wiring in the peripheral region in a planar view, thereby blocking light traveling from the observation side toward the peripheral wiring and light reflected on the surface of the peripheral wiring.

[0004] Japanese Patent Application Laid-Open No. 2019-091716

[0005] In recent years, there has been a demand for suppressing reflection of near-infrared light from electrodes around the display area. For example, in eyewear devices such as VR (Virtual Reality) devices, near-infrared light is used for gaze detection, and if this near-infrared light is reflected by electrodes around the display area, there is a risk of false gaze detection. However, Patent Document 1 does not consider technology for suppressing reflection of near-infrared light from electrodes around the display area.

[0006] An object of the present disclosure is to provide a display device that can suppress reflection of near-infrared light from electrodes around the display area, and an electronic device including the same.

[0007] In order to solve the above-mentioned problems, a display device according to a first aspect of the present disclosure is a display device comprising: an electrode provided around a display area; and a black sealing portion covering the electrode so that a portion of the electrode protrudes in a planar view, wherein the electrode has a transmissive portion capable of transmitting near-infrared light in the portion protruding from the sealing portion in a planar view.

[0008] A display device according to a second aspect of the present disclosure is a display device comprising: an electrode provided around a display area; and a black sealing portion covering the electrode so that a portion of the electrode protrudes in a planar view; wherein the electrode includes a multilayer film on the sealing portion side that can suppress reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference.

[0009] A display device according to a third aspect of the present disclosure is a display device comprising: an electrode provided around a display area; a black seal portion covering the electrode so that a portion of the electrode extends beyond the seal portion in a planar view; and a reflection suppression layer that suppresses reflection of near-infrared light of a specific wavelength that is incident on the portion that extends beyond the seal portion in a planar view.

[0010] FIG. 1 is a plan view of a display device according to an embodiment. FIG. 2 is a cross-sectional view taken along line II-II in FIG. 1. FIG. 3A is a cross-sectional view of an OLED layer having a single layer of light-emitting units. FIG. 3B is a cross-sectional view of an OLED layer having two layers of light-emitting units. FIG. 4 is a plan view of a display device according to Modification 1. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 4. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 4. FIG. 7 is an exploded perspective view of a contact electrode. FIG. 8 is a cross-sectional view of the peripheral region of a display device according to Modification 2. FIG. 9 is a cross-sectional view of the peripheral region of a display device according to Modification 3. FIG. 10 is a cross-sectional view of the peripheral region of a display device according to Modification 4. FIG. 11 is a cross-sectional view of the peripheral region of a display device according to Modification 5. FIG. 12 is a cross-sectional view of the peripheral region of a display device according to Modification 8. FIG. 13 is a cross-sectional view of a first example of a leakage suppression structure. FIG. 14 is a cross-sectional view of a second example of a leakage suppression structure. FIG. 15 is a cross-sectional view of a third example of a leakage suppression structure. FIG. 16 is a cross-sectional view of a fourth example of a leakage suppression structure. 17 is a cross-sectional view of a fifth example of a leak suppression structure. FIG. 18 is a cross-sectional view of a sixth example of a leak suppression structure. FIG. 19 is a cross-sectional view of a seventh example of a leak suppression structure. FIG. 20 is an enlarged cross-sectional view of the groove shown in FIG. 19. FIG. 21 is a cross-sectional view of an eighth example of a leak suppression structure. FIG. 22 is a cross-sectional view of a ninth example of a leak suppression structure. FIG. 23 is a plan view for explaining the arrangement of a first electrode and a third electrode. FIGS. 24A, 24B, and 24C are conceptual diagrams for explaining the relationship between a normal LN passing through the center of the light-emitting portion, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection portion, respectively. FIG. 25 is a conceptual diagram for explaining the relationship between a normal LN passing through the center of the light-emitting portion, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection portion. 26A and 26B are conceptual diagrams for explaining the relationship between a normal LN passing through the center of the light-emitting section, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection section. FIG. 27 is a conceptual diagram for explaining the relationship between a normal LN passing through the center of the light-emitting section, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selection section. FIG. 28A is a schematic cross-sectional view for explaining a first example of a resonator structure.Fig. 28B is a schematic cross-sectional view for explaining a second example of a resonator structure. Fig. 29A is a schematic cross-sectional view for explaining a third example of a resonator structure. Fig. 29B is a schematic cross-sectional view for explaining a fourth example of a resonator structure. Fig. 30A is a schematic cross-sectional view for explaining a fifth example of a resonator structure. Fig. 30B is a schematic cross-sectional view for explaining a sixth example of a resonator structure. Fig. 31 is a schematic cross-sectional view for explaining a seventh example of a resonator structure. Fig. 32 is a perspective view of a head mounted display. Fig. 33 is a schematic configuration diagram of a main body of the head mounted display. Fig. 34 is a perspective view of a see-through head mounted display.

[0011] Embodiments of the present disclosure will be described in the following order: 1. General description of a display device and electronic device according to the present disclosure 2. One embodiment (example of a display device) 3. Modification 4. Example of a leakage suppression structure 5. Relationship between normals passing through the centers of a light-emitting section, a lens member, and a wavelength selection section 6. Example of a resonator structure 7. Application example (example of an electronic device)

[0012] The embodiments and the like described below are preferred specific examples of the present disclosure, and the contents of the present disclosure are not limited to these embodiments and the like. In all the drawings of the following embodiments, the same or corresponding parts are denoted by the same reference numerals. To avoid cluttering the illustrations, only some of the components may be denoted by reference numerals, or the illustrations may be simplified, enlarged, or reduced in size.

[0013] <1. General Description of Display Devices and Electronic Devices According to the Present Disclosure> In a display device according to a first aspect of the present disclosure, components of near-infrared light incident on the electrodes that are incident on the black seal portion are absorbed by the black seal portion, and components of the near-infrared light that are incident on the transmissive portion are absorbed by a member or the like disposed below the transmissive portion after passing through the transmissive portion. This suppresses reflection of near-infrared light by the electrodes. Therefore, when the display device according to the first aspect of the present disclosure is provided in an eyewear device such as a VR device, erroneous detection of gaze caused by reflection of near-infrared light by the electrodes can be suppressed. This suppresses a decrease in the accuracy of gaze detection.

[0014] In the display device according to the first aspect of the present disclosure, the transmissive portion preferably includes a transparent conductive layer from the viewpoints of transmissivity and conductivity for near-infrared light.

[0015] In the display device according to the first aspect of the present disclosure, the electrode preferably has a reflective portion capable of reflecting near-infrared light in a portion covered by the sealing portion in a plan view, and the reflective portion preferably includes a metal layer and a transparent conductive layer provided on the metal layer. This allows the transparent conductive layer included in the reflective portion to be used to form the transmissive portion. Therefore, the transmissive portion can be easily formed in the electrode during the electrode formation process.

[0016] In the display device according to the first aspect of the present disclosure, the electrode may have a reflective portion along with a transmissive portion in a portion that extends beyond the sealing portion in a plan view. In this case, a component of near-infrared light incident on the portion that extends beyond the sealing portion and that enters the reflective portion is reflected by the reflective portion, whereas a component of the near-infrared light that enters the transmissive portion is absorbed by a member or the like disposed below the transmissive portion after passing through the transmissive portion. Therefore, reflection of near-infrared light that enters the portion that extends beyond the sealing portion is suppressed overall.

[0017] The display device according to the first aspect of the present disclosure preferably further includes a member capable of absorbing near-infrared light, disposed below the transmissive portion. In this case, the near-infrared light transmitted through the transmissive portion is absorbed by the member. Here, "below the transmissive portion" refers to the relative positional relationship between the transmissive portion and the member, and includes not only a state in which the member is located directly below the transmissive layer without any other member sandwiched therebetween, but also a state in which the member is located below the transmissive portion with another member sandwiched therebetween.

[0018] The member capable of absorbing near-infrared light includes, for example, a metal layer. The metal layer includes, for example, a wiring or a substrate. The metal layer includes, for example, silicon (Si) or copper (Cu). More specifically, for example, the metal layer includes a substrate containing silicon (Si) or a wiring containing copper (Cu).

[0019] The display device according to the first aspect of the present disclosure may include a plurality of pixels arranged in a display region, the plurality of pixels sharing a pixel electrode, the pixel electrode extending from the display region to a periphery of the display region and connected to the electrode, and the pixel electrode may be either a cathode electrode or an anode electrode.

[0020] In the display device according to the first aspect of the present disclosure, the electrode may have a loop shape surrounding the display area in a plan view, and the portion extending beyond the sealing portion in a plan view may include a portion of the electrode on the inner periphery in a plan view. In this case, reflection of near-infrared light at the portion on the inner periphery of the loop-shaped electrode can be suppressed. The loop shape may be either a closed loop shape or an open loop shape.

[0021] In the display device according to the second aspect of the present disclosure, the component of near-infrared light incident on the electrode that is incident on the sealing portion is absorbed by the black sealing portion, and the component of the near-infrared light that is incident on the multilayer film is suppressed from reflection by the multilayer film. This suppresses reflection of near-infrared light by the electrode. Therefore, when the display device according to the second aspect of the present disclosure is provided in an eyewear device such as a VR device, it is possible to suppress a decrease in the accuracy of gaze detection.

[0022] In the display device according to the second aspect of the present disclosure, the electrode preferably further includes a metal layer, and the multilayer film preferably includes a first conductive layer having light-transmitting properties and a second conductive layer having light-transmitting properties, in that order, on the metal layer. In this case, by adjusting the refractive indexes and thicknesses of the first conductive layer and the second conductive layer formed on the metal layer, a multilayer film capable of suppressing reflection of near-infrared light of a specific wavelength can be formed by utilizing multilayer film interference. Therefore, it is relatively easy to impart the function of suppressing reflection of near-infrared light to the electrode.

[0023] In the display device according to the second aspect of the present disclosure, the second conductive layer may be provided on a portion of one surface of the first conductive layer and may extend beyond the sealing portion in a plan view. In this case, a multilayer film capable of suppressing reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference can be formed in the extending portion of the sealing portion.

[0024] In the display device according to the second aspect of the present disclosure, it is preferable that the first conductive layer contains indium tin oxide and the second conductive layer contains titanium nitride.

[0025] In the display device according to the third aspect of the present disclosure, the component of near-infrared light incident on the electrode that is incident on the sealing portion is absorbed by the black sealing portion, and the component of the near-infrared light that is incident on the reflection-suppressing layer is suppressed from reflection by the reflection-suppressing layer. This suppresses reflection of near-infrared light by the electrode. Therefore, when the display device according to the third aspect of the present disclosure is provided in an eyewear device such as a VR device, it is possible to suppress a decrease in the accuracy of gaze detection.

[0026] In the display device according to the third aspect of the present disclosure, the antireflection layer is preferably a multilayer film that can suppress reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference.

[0027] In the display device according to the third aspect of the present disclosure, the multilayer film preferably includes a first protective layer and a second protective layer having different refractive indices. In this case, the first protective layer and the second protective layer provided on or above the electrodes provided around the display area can be used to form the multilayer film as a reflection suppressing layer. The first protective layer may include, for example, silicon oxide, and the second protective layer may include, for example, silicon nitride.

[0028] In the present disclosure, the sealing portion may be provided around the periphery of the display area and seal the side portion of the display device.

[0029] In this disclosure, "near-infrared light" refers to light with a wavelength of 780 nm or more and 2500 nm or less. In this disclosure, "planar view" refers to a planar view when an object is viewed from a direction perpendicular to the display surface of a display device. In this disclosure, "multilayer film" refers to a laminate in which two or more layers are stacked. In this disclosure, "pixel" refers to the smallest unit that constitutes an image. When one pixel is composed of multiple sub-pixels, "pixel" refers to "sub-pixel."

[0030] In the display device according to the present disclosure, the plurality of pixels include, as light-emitting elements, at least one type of self-luminous light-emitting element selected from the group consisting of OLED (Organic Light Emitting Diode) elements, LED (Light Emitting Diode) elements, IEL (Inorganic Electro-Luminescence) elements, QLED (Quantum Dot Light Emitting Diode) elements, and semiconductor laser elements.

[0031] The display device according to the present disclosure may be included in an electronic device. For example, the display device according to the present disclosure may be included in an eyewear device such as a VR device, an MR device, or an AR device. The eyewear device also includes a headset.

[0032] In the present disclosure, "on member A" in a description such as "member B is provided on member A" indicates the relative positional relationship between member A and member B, and includes not only a state in which member B is located directly on member A without any other member therebetween, but also a state in which member B is located on member A with at least one other member therebetween.

[0033] 2. One Embodiment [Schematic Configuration of Display Device 101] Fig. 1 is a plan view of a display device 101 according to one embodiment. Fig. 2 is a cross-sectional view taken along line II-II in Fig. 1. As shown in Fig. 1, the display device 101 has a display region RE1 and a peripheral region RE2 provided around the display region RE1. In one embodiment, an example will be described in which the display device 101 is a top-emission OLED display device, but the type and format of the display device 101 are not limited to this example. The display device 101 may also be a microdisplay.

[0034] In this specification, the first and second directions that are orthogonal to each other within the display surface of the display device 101 are referred to as the X-axis direction and the Y-axis direction, respectively, and the third direction that is perpendicular to the display surface of the display device 101 is referred to as the Z-axis direction. In one embodiment, the Y-axis direction is the horizontal direction of the display surface, and the X-axis direction is the vertical direction of the display surface.

[0035] A plurality of sub-pixels 10R, 10G, and 10B are two-dimensionally arranged in a predetermined arrangement pattern within the display region RE1. The predetermined arrangement pattern may be, for example, a stripe arrangement, a mosaic arrangement, a square arrangement, a delta arrangement, or any other arrangement. A pad section 24 and a driver (not shown) for displaying images are provided in the peripheral region RE2. A flexible printed circuit (FPC) may be connected to the pad section 24 (not shown).

[0036] The sub-pixel 10R can emit red light. The sub-pixel 10G can emit green light. The sub-pixel 10B can emit blue light. In the following description, when the sub-pixels 10R, 10G, and 10B are referred to collectively without any particular distinction, the sub-pixels 10R, 10G, and 10B may be simply referred to as sub-pixels 10. One pixel (one pixel) is composed of, for example, a plurality of adjacent sub-pixels 10R, 10G, and 10B. However, the configuration of one pixel is not limited to this example.

[0037] 2 , the display device 101 includes a drive substrate 11, a plurality of light-emitting elements 12W, an insulating layer 13, contact electrodes 14, a protective layer 15, an ALD (Atomic Layer Deposition) layer 16, a planarization layer 17, a color filter 18, a light-shielding layer 18BK, a planarization layer 19, a sealing portion 20, a filled resin layer 21, a cover glass 22, and a polarizer 23. The polarizer 23 is provided in the display device 101 as needed, but does not necessarily have to be provided in the display device 101.

[0038] In this specification, of the two surfaces of each layer constituting display device 101, the surface facing the display surface (top side) of display device 101 may be referred to as the first surface (upper surface), and the surface facing the opposite side (bottom side) of display device 101 from the display surface may be referred to as the second surface (lower surface). In this specification, the peripheral edge of the first surface refers to a portion having a predetermined width extending from the peripheral edge of the first surface toward the inside. In this specification, the peripheral edge of the second surface refers to a portion having a predetermined width extending from the peripheral edge of the second surface toward the inside. In this specification, the planar view refers to a planar view when an object is viewed from a direction perpendicular to the first surface or the second surface.

[0039] (Drive Substrate 11) The drive substrate 11 is a so-called backplane, and is capable of driving a plurality of light emitting elements 12W. The drive substrate 11 includes, for example, a substrate 111 and an insulating layer 112 in this order.

[0040] A plurality of drive transistors (not shown) and the like are provided on the first surface side of the substrate 111. The substrate 111 is preferably configured to be capable of absorbing near-infrared light. In this case, the substrate 111 is provided below the transmissive portion 142 and is an example of a member capable of absorbing near-infrared light. The substrate 111 may be, for example, a semiconductor substrate on which a plurality of drive transistors and the like can be easily formed, or a glass substrate or resin substrate with low moisture and oxygen permeability. The semiconductor substrate may include, for example, amorphous silicon, polycrystalline silicon, or single crystal silicon. The glass substrate may include, for example, high strain point glass, soda glass, borosilicate glass, forsterite, lead glass, or quartz glass. The resin substrate may include, for example, at least one selected from the group consisting of polymethyl methacrylate, polyvinyl alcohol, polyvinyl phenol, polyether sulfone, polyimide, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate.

[0041] The insulating layer 112 is provided on the first surface of the substrate 111 and covers the plurality of driving transistors and the like. The insulating layer 112 includes therein a plurality of wirings 113a, one or more wirings 113b, a plurality of contact plugs 114a, and a plurality of contact plugs 114b. The wirings 113a and the contact plugs 114a electrically connect the light-emitting element 12W and the driving transistors. The plurality of contact plugs 114b electrically connect the contact electrodes 14 and the wirings 113b. The wirings 113b are, for example, potential supply wirings.

[0042] The wiring 113a and the wiring 113b are made of, for example, a metal layer. The metal layer contains at least one metal selected from the group consisting of, for example, tungsten (W) and copper (Cu). A barrier metal may be provided on the surface of the wiring 113a and the wiring 113b. The barrier metal may be, for example, tantalum (Ta) or tantalum nitride (TaN). ｘ The contact plug 114a and the contact plug 114b include, for example, at least one metal selected from the group consisting of copper (Cu), titanium (Ti), and the like.

[0043] The insulating layer 112 is, for example, an organic insulating layer, an inorganic insulating layer, or a laminate thereof. The organic insulating layer contains, for example, at least one selected from the group consisting of polyimide-based resin, acrylic-based resin, and novolac-based resin. The inorganic insulating layer is, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ ) and the like.

[0044] (Light-emitting element 12W) The light-emitting element 12W is connected to a drive circuit and can emit white light under the control of the drive circuit. In one embodiment, the light-emitting element 12W is an organic light-emitting diode element (OLED element).

[0045] The plurality of light-emitting elements 12W are two-dimensionally arranged in a predetermined arrangement pattern on the first surface side of the drive substrate 11. The predetermined arrangement pattern is as described above as the predetermined arrangement pattern of the plurality of sub-pixels 10. The plurality of light-emitting elements 12W have a first electrode 121, an OLED layer 122, and a second electrode 123, in that order.

[0046] (First electrode 121) The first electrode 121 is provided on the second surface side of the OLED layer 122. The first electrode 121 is an individual electrode provided individually for each of the plurality of light-emitting elements 12W. That is, the first electrode 121 is separated between adjacent light-emitting elements 12W in the in-plane direction of the first surface of the drive substrate 11. The first electrode 121 is an anode. When a voltage is applied between the first electrode 121 and the second electrode 123, holes are injected from the first electrode 121 into the OLED layer 122.

[0047] The first electrode 121 includes, for example, a metal layer 121 a and a transparent conductive layer 121 b provided on a first surface of the metal layer 121 a. The transparent conductive layer 121 b is provided on the OLED layer 122 side, and the metal layer 121 a is provided on the opposite side from the OLED layer 122 side.

[0048] The metal layer 121a may function as a reflective layer that reflects light emitted by the OLED layer 122. The metal layer 121a includes at least one metal element selected from the group consisting of chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag). The metal layer 121a may include at least one of the metal elements as a constituent element of an alloy. Specific examples of the alloy include an aluminum alloy and a silver alloy. Specific examples of the aluminum alloy include AlNd and AlCu.

[0049] An underlayer (not shown) may be provided adjacent to the second surface side of the metal layer 121a. The underlayer may be capable of improving the crystal orientation of the metal layer 121a during deposition of the metal layer 121a. The underlayer may contain, for example, at least one metal element selected from the group consisting of titanium (Ti) and tantalum (Ta). The underlayer may contain the at least one metal element as a constituent element of an alloy.

[0050] The transparent conductive layer 121b includes, for example, a transparent conductive oxide, such as at least one selected from the group consisting of transparent conductive oxides containing indium (hereinafter referred to as "indium-based transparent conductive oxides"), transparent conductive oxides containing tin (hereinafter referred to as "tin-based transparent conductive oxides"), and transparent conductive oxides containing zinc (hereinafter referred to as "zinc-based transparent conductive oxides").

[0051] Examples of indium-based transparent conductive oxides include indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), and fluorine-doped indium oxide (IFO). Among these transparent conductive oxides, indium tin oxide (ITO) is particularly preferred. Indium tin oxide (ITO) has a particularly low work function barrier for hole injection into the OLED layer 122, allowing the driving voltage of the display device 101 to be particularly low. Examples of tin-based transparent conductive oxides include tin oxide, antimony-doped tin oxide (ATO), and fluorine-doped tin oxide (FTO). Examples of zinc-based transparent conductive oxides include zinc oxide, aluminum-doped zinc oxide (AZO), boron-doped zinc oxide, and gallium-doped zinc oxide (GZO).

[0052] (OLED Layer 122) The OLED layer 122 can emit white light. The OLED layer 122 is an example of an organic-material-containing layer including an organic light-emitting layer. The OLED layer 122 is sandwiched between a plurality of first electrodes 121 and one second electrode 123. The OLED layer 122 is provided across the display region RE1. The OLED layer 122 may extend from the display region RE1 to the peripheral region RE2 and cover a portion of the first surface of the contact electrode 14 (the inner peripheral edge of the first surface). The OLED layer 122 is a layer common to a plurality of light-emitting elements 12W included in the display region RE1.

[0053] The OLED layer 122 may be configured as a laminate including an organic light-emitting layer, in which case some layers of the laminate (e.g., an electron injection layer) may be inorganic. The OLED layer 122 may be an OLED layer having a single light-emitting unit U as shown in FIG. 3A , an OLED layer having two light-emitting units U1 and U2 (tandem structure) as shown in FIG. 3B , or an OLED layer having a structure other than these. The OLED layer 122 having a single light-emitting unit U has a configuration in which, for example, a hole injection layer 1221, a hole transport layer 1222, a red light-emitting layer 1220R, an emission separation layer 1223, a blue light-emitting layer 1220B, a green light-emitting layer 1220G, an electron transport layer 1224, and an electron injection layer 1225 are stacked in this order from the first electrode 121 to the second electrode 123. The OLED layer having two light-emitting units U1 and U2 has a configuration in which, for example, a hole injection layer 1221, a hole transport layer 1222, a blue light-emitting layer 1220B, an electron transport layer 1226, a charge generation layer 1227, a hole transport layer 1228, a yellow light-emitting layer 1220Y, an electron transport layer 1224, and an electron injection layer 1225 are laminated in this order from the first electrode 121 to the second electrode 123.

[0054] The hole injection layer 1221 can increase the efficiency of hole injection into the light-emitting layers 1220R, 1220G, and 1220B and suppress leakage. The hole transport layers 1222 and 1228 can increase the efficiency of hole transport into the light-emitting layers 1220R, 1220B, and 1220Y. The electron injection layer 1225 can increase the efficiency of electron injection into the light-emitting layers 1220G and 1220Y. The electron transport layers 1224 and 1226 can increase the efficiency of electron transport into the light-emitting layers 1220G, 1220B, and 1220Y. The emission separation layer 1223 is a layer for adjusting the injection of carriers into the light-emitting layers 1220R, 1220G, and 1220B. The balance of light emission of each color is adjusted by injecting electrons and holes into the light-emitting layers 1220R, 1220G, and 1220B via the emission separation layer 1223. The charge generating layer 1227 can supply electrons and holes to the blue light emitting layer 1220B and the yellow light emitting layer 1220Y, which are disposed so as to sandwich the charge generating layer 1227, respectively.

[0055] When an electric field is applied to the red light-emitting layer 1220R, the green light-emitting layer 1220G, the blue light-emitting layer 1220B, and the yellow light-emitting layer 1220Y, recombination occurs between holes injected from the first electrode 121 or the charge generation layer 1227 and electrons injected from the second electrode 123 or the charge generation layer 1227, and the red light, green light, blue light, and yellow light can be emitted.

[0056] (Second electrode 123) The second electrode 123 is provided on the first surface side of the OLED layer 122. The second electrode 123 is an example of a pixel electrode. The second electrode 123 is provided continuously from the display region RE1 to the peripheral region RE2. The second electrode 123 is connected between adjacent light-emitting elements 12W in the in-plane direction of the first surface of the drive substrate 11, and is a common electrode for multiple light-emitting elements 12W. In other words, multiple sub-pixels 10 share the second electrode 123.

[0057] The second electrode 123 is a cathode. When a voltage is applied between the first electrode 121 and the second electrode 123, electrons are injected from the second electrode 123 into the OLED layer 122. The second electrode 123 is translucent to the white light emitted from the OLED layer 122. The second electrode 123 is preferably a transparent electrode that is transparent to visible light. In this specification, visible light refers to light in a wavelength range of 360 nm or more and less than 780 nm.

[0058] In order to improve light-emitting efficiency, it is preferable that the second electrode 123 be made of a material that is as transparent as possible and has a small work function. The second electrode 123 is made of, for example, at least one layer of a metal layer and a transparent conductive layer. More specifically, the second electrode 123 is made of a single-layer film of a metal layer or a transparent conductive layer, or a laminated film of a metal layer and a transparent conductive layer. When the second electrode 123 is made of a laminated film, the metal layer may be provided on the OLED layer 122 side, or the transparent conductive layer may be provided on the OLED layer 122 side. However, from the viewpoint of having a layer with a low work function adjacent to the OLED layer 122, it is preferable that the metal layer be provided on the OLED layer 122 side.

[0059] The metal layer contains, for example, at least one metal element selected from the group consisting of magnesium (Mg), aluminum (Al), silver (Ag), calcium (Ca), and sodium (Na). The metal layer may contain the at least one metal element as a constituent element of an alloy. Specific examples of the alloy include an MgAg alloy, an MgAl alloy, and an AlLi alloy. The transparent conductive layer contains, for example, a transparent conductive oxide. Examples of the transparent conductive oxide include the same materials as the transparent conductive oxide of the first electrode 121 described above.

[0060] (Insulating Layer 13) The insulating layer 13 is provided on the first surface of the drive substrate 11 in correspondence with a portion between the separated first electrodes 121. The insulating layer 13 is a so-called pixel define layer (PDL) and can separate adjacent pixels in the in-plane direction of the first surface of the drive substrate 11. The insulating layer 13 may further be provided in correspondence with a portion between the contact electrode 14 and the outermost first electrode 121 of the multiple first electrodes 121 arranged two-dimensionally.

[0061] The insulating layer 13 has a plurality of openings 13a. The plurality of openings 13a are provided corresponding to the respective light-emitting elements 12W. The plurality of openings 13a may be provided on the first surface (the surface on the OLED layer 122 side) of each first electrode 121. That is, the peripheral portion of the first surface of each first electrode 121 may be covered by the insulating layer 13. The first electrode 121 and the OLED layer 122 come into contact with each other through the openings 13a. The shape of the openings 13a in a plan view is not particularly limited, and may be, for example, a substantially rectangular shape, a substantially circular shape, or a substantially elliptical shape.

[0062] The insulating layer 13 is, for example, an organic insulating layer, an inorganic insulating layer, or a laminate thereof. The organic insulating layer contains, for example, at least one selected from the group consisting of polyimide-based resins, acrylic-based resins, and novolac-based resins. The inorganic insulating layer is, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ ) and the like.

[0063] (Contact Electrode 14) The contact electrode 14 is provided in the peripheral region RE2 of the first surface of the drive substrate 11. The contact electrode 14 is an auxiliary electrode that connects the second electrode 123 and the wiring 113b. The first surface of the contact electrode 14 is connected to the peripheral edge of the second surface of the second electrode 123. Meanwhile, the second surface of the contact electrode 14 is connected to the wiring 113b via a contact plug 114b. In one embodiment, the contact electrode 14 has a closed loop shape surrounding the display region R1 in a planar view. However, the shape of the contact electrode 14 in a planar view is not limited to a closed loop shape and may be, for example, an open loop shape or a shape other than a loop. The inner peripheral portion of the contact electrode 14 protrudes from the inner periphery of the seal portion 20 in a planar view.

[0064] The contact electrode 14 has a reflective portion 141 and a transmissive portion 142. The reflective portion 141 is configured to be able to reflect visible light and near-infrared light. The transmissive portion 142 is configured to be able to transmit visible light and near-infrared light.

[0065] The reflective portion 141 and the transmissive portion 142 are provided in this order from the outer periphery of the contact electrode 14 toward the inner periphery in a plan view. The reflective portion 141 is provided in a portion covered by the seal portion 20 in a plan view. Specifically, the reflective portion 141 is provided in a range from the outer periphery of the contact electrode 14 to the inner periphery of the seal portion 20 in a plan view, or in a range from the outer periphery of the contact electrode 14 to a position just before the inner periphery of the seal portion 20 in a plan view. The transmissive portion 142 protrudes from the inner periphery of the seal portion 20 in a plan view. Specifically, the transmissive portion 142 is provided in a range from the inner periphery of the contact electrode 14 to the inner periphery of the seal portion 20 in a plan view, or in a range from the inner periphery of the contact electrode 14 to a position deeper than the inner periphery of the seal portion 20 in a plan view.

[0066] The near-infrared light that has passed through the transmitting portion 142 may be incident on the substrate 111 and absorbed by the substrate 111. The insulating layer 112 may include wiring (not shown) provided below the transmitting portion 142. The wiring contains, for example, copper (Cu) and is configured to be able to absorb near-infrared light. When such wiring is provided within the insulating layer 112, the near-infrared light that has passed through the transmitting portion 142 may be absorbed by the wiring, or may be absorbed by both the wiring and the substrate 111. Note that the member that is provided below the transmitting portion 142 and is able to absorb near-infrared light may be a member other than the wiring and the substrate 111.

[0067] In one embodiment, the reflective portion 141 and the transmissive portion 142 have a closed loop shape in a planar view. However, the shape of the reflective portion 141 and the transmissive portion 142 in a planar view is not limited to a closed loop shape, and may be, for example, an open loop shape or a shape other than a loop shape.

[0068] The contact electrode 14 includes a metal layer 14 a and a transparent conductive layer 14 b. The metal layer 14 a is configured to be able to reflect visible light and near-infrared light. The transparent conductive layer 14 b is configured to be able to transmit visible light and near-infrared light.

[0069] The metal layer 14a and the transparent conductive layer 14b are laminated in this order from the back surface toward the display surface of the display device 101. In one embodiment, the metal layer 14a and the transparent conductive layer 14b have a closed loop shape in a planar view. However, the shape of the metal layer 14a and the transparent conductive layer 14b in a planar view is not limited to a closed loop shape, and may be, for example, an open loop shape or a shape other than a loop shape.

[0070] The width of the metal layer 14a in a plan view is narrower than the width of the transparent conductive layer 14b in a plan view. The metal layer 14a is provided over a range from the outer periphery of the contact electrode 14 to the inner periphery of the seal portion 20 in a plan view, or over a range from the outer periphery of the contact electrode 14 to a position just before the inner periphery of the seal portion 20 in a plan view. The transparent conductive layer 14b is provided over the entire range from the outer periphery to the inner periphery of the contact electrode 14 in a plan view.

[0071] The reflective portion 141 includes both the metal layer 14a and the transparent conductive layer 14b. The transmissive portion 142 includes only the transparent conductive layer 14b of the metal layer 14a and the transparent conductive layer 14b. Examples of materials for the metal layer 14a and the transparent conductive layer 14b include the same materials as the metal layer 121a and the transparent conductive layer 121b of the first electrode 121 described above. The metal layer 14a and the transparent conductive layer 14b may be made of the same materials as the metal layer 121a and the transparent conductive layer 121b of the first electrode 121, respectively. In this case, the contact electrode 14 and the multiple first electrodes 121 can be manufactured in the same process.

[0072] (Protective Layer 15) The protective layer 15 is provided on the first surface of the second electrode 123 and covers the entire first surface of the drive substrate 11. The protective layer 15 is translucent to the white light emitted from the light-emitting elements 12W. The protective layer 15 can protect the plurality of light-emitting elements 12W, etc. For example, the protective layer 15 can prevent moisture from entering the plurality of light-emitting elements 12W, etc. from the external environment. Furthermore, when the second electrode 123 is formed of a metal layer, the protective layer 15 may have a function of preventing oxidation of this metal layer.

[0073] The protective layer 15 contains, for example, at least one of an inorganic material and an organic material having low moisture absorption. The protective layer 15 may have a single layer structure or a multilayer structure. When the thickness of the protective layer 15 is increased, a multilayer structure is preferable. This is to relieve internal stress in the protective layer 15. The inorganic material is, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ), silicon oxynitride (SiO ｘ N ｙ ), titanium oxide (TiO ｘ ) and aluminum oxide (AlO ｘThe organic material includes at least one selected from the group consisting of thermosetting resin compositions, photosensitive resin compositions, and the like. The photosensitive resin composition includes, for example, an ultraviolet-curable resin composition. Specific examples of the organic material include at least one selected from the group consisting of acrylic resins, polyimide resins, novolac resins, epoxy resins, norbornene resins, parylene resins, and the like.

[0074] (ALD Layer 16) The ALD layer 16 is a deposition layer formed by depositing atomic layers. The ALD layer 16 is provided on the first surface of the protective layer 15 and covers the entire first surface of the drive substrate 11. In one embodiment, an example in which the ALD layer 16 is provided on the first surface of the protective layer 15 will be described. However, the layered structure of the protective layer 15 and the ALD layer 16 is not limited to this. For example, the ALD layer 16 may be included in the protective layer 15.

[0075] The ALD layer 16 is translucent to the white light emitted from the light emitting elements 12W. The ALD layer 16 can supplement the protective function of the protective layer 15. That is, by providing the ALD layer 16 on the first surface of the protective layer 15, it is possible to further suppress moisture penetration into the plurality of light emitting elements 12W, etc.

[0076] The ALD layer 16 includes, for example, a metal oxide or a metal nitride. The metal oxide may be, for example, aluminum oxide (AlO ｘ ) or titanium oxide (TiO ｘ Metal nitrides include, for example, titanium nitride (TiN ｘ ) is included.

[0077] (Planarization Layer 17) The planarization layer 17 is provided on the first surface of the ALD layer 16 so that the peripheral edge of the first surface of the ALD layer 16 is exposed. The planarization layer 17 fills in the irregularities on the first surface of the ALD layer 16, and can form a flat first surface on the upper side of the ALD layer 16. The planarization layer 17 is translucent to the white light emitted from the light-emitting element 12W. The planarization layer 17 is, for example, a resin layer containing an organic resin material.

[0078] The organic resin material includes, for example, a cured product of a photosensitive resin composition. The photosensitive resin composition may include either a positive-type photosensitive resin composition or a negative-type photosensitive resin composition. Specific examples of the photosensitive resin composition include at least one selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, acrylic resin, phenolic resin, and siloxane resin.

[0079] (Color Filter 18) The color filter 18 is a so-called on-chip color filter (OCCF). The color filter 18 is provided on the first surface of the planarization layer 17. The color filter 18 includes, for example, a plurality of colored layers 18FR, a plurality of colored layers 18FG, and a plurality of colored layers 18FB. In the following description, when the colored layers 18FR, 18FG, and 18FB are referred to collectively without any particular distinction, the colored layers 18FR, 18FG, and 18FB may be referred to as colored layers 18F.

[0080] The plurality of colored layers 18F are two-dimensionally arranged on the first surface of the protective layer 15 in a predetermined arrangement pattern. The predetermined arrangement pattern is as described above for the plurality of sub-pixels 10. Each colored layer 18F is provided above the light-emitting element 12W. The sub-pixel 10R is composed of the light-emitting element 12W and a colored layer 18FR provided above the light-emitting element 12W. The sub-pixel 10G is composed of the light-emitting element 12W and a colored layer 18FG provided above the light-emitting element 12W. The sub-pixel 10B is composed of the light-emitting element 12W and a colored layer 18FB provided above the light-emitting element 12W.

[0081] The coloring layer 18FR has a red color. The coloring layer 18FR transmits the red light component of the white light emitted from the light-emitting element 12W, but can absorb visible light components other than red light. The coloring layer 18FG has a green color. The coloring layer 18FG transmits the green light component of the white light emitted from the light-emitting element 12W, but can absorb visible light components other than green light. The coloring layer 18FB has a blue color. The coloring layer 18FB transmits the blue light component of the white light emitted from the light-emitting element 12W, but can absorb visible light components other than blue light.

[0082] The colored layer 18FR includes, for example, a red color resist, the colored layer 18FG includes, for example, a green color resist, and the colored layer 18FB includes, for example, a blue color resist.

[0083] (Light-shielding layer 18BK) The light-shielding layer 18BK is provided on the first surface of the planarization layer 17 in the peripheral region RE2. The light-shielding layer 18BK is located above the contact electrodes 14 and covers the contact electrodes 14 from above. The light-shielding layer 18BK is configured to absorb and block visible light (e.g., external light) incident on the peripheral region RE2. This makes it possible to suppress reflection of visible light at the contact electrodes 14, etc. In one embodiment, the light-shielding layer 18BK is configured to transmit near-infrared light incident on the peripheral region RE2. This allows the near-infrared light to pass through the light-shielding layer 18BK and enter the transmissive portion 142 of the contact electrodes 14.

[0084] In one embodiment, the light-shielding layer 18BK has a loop shape similar to that of the contact electrode 14. However, the shape of the light-shielding layer 18BK in a plan view is not limited to a closed loop shape, and may be, for example, an open loop shape or a shape other than a loop shape.

[0085] The light-shielding layer 18BK preferably includes a coloring layer 18FR and a coloring layer 18FB. Such a configuration of the light-shielding layer 18BK allows the color filter 18 and the light-shielding layer 18BK to be formed in the same process. While FIG. 2 shows an example in which the coloring layer 18FB is provided on the first surface of the coloring layer 18FR, the coloring layer 18FR may also be provided on the first surface of the coloring layer 18FB. While FIG. 2 shows an example in which the coloring layers 18FR and 18FB of the light-shielding layer 18BK are thinner than the coloring layers 18FR and 18FB of the color filter 18, the thicknesses of the coloring layers 18FR and 18FB of the light-shielding layer 18BK may be substantially the same as the thicknesses of the coloring layers 18FR and 18FB of the color filter 18. The light-shielding layer 18BK is not limited to the above-mentioned layer structure (a two-layer structure including a colored layer 18FR and a colored layer 18FB), but may be, for example, a three-layer structure including a colored layer 18FR, a colored layer 18FG, and a colored layer 18FB.

[0086] (Planarization Layer 19) The planarization layer 19 is provided on the first surface of the color filter 18 and on the first surface of the light-shielding layer 18BK. The planarization layer 19 may cover the side surface on the outer periphery of the light-shielding layer 18BK. The planarization layer 19 fills in the irregularities on the first surface of the color filter 18, and can form a flat first surface above the color filter 18. The planarization layer 19 is translucent to the red light, green light, and blue light emitted from the color filter 18. Examples of materials for the planarization layer 19 include the same materials as those for the planarization layer 17.

[0087] (Sealing portion 20) The sealing portion 20 is provided in the peripheral region RE2 and seals the side portion of the display device 101. The sealing portion 20 covers a portion of the contact electrode 14 above the contact electrode 14. More specifically, the sealing portion 20 covers a range from the outer periphery of the contact electrode 14 toward a predetermined position in a plan view. The sealing portion 20 is black and is configured to be able to absorb visible light and near-infrared light. In a plan view, the sealing portion 20 is provided along the periphery of the display device 101 and has a closed loop shape.

[0088] The seal portion 20 has a side seal portion 201 and an extension portion 202. The side seal portion 201 is the main body portion of the seal portion 20. The side seal portion 201 is provided between the peripheral edge of the first surface of the ALD layer 16 and the peripheral edge of the second surface of the cover glass 22, and bonds the peripheral edge of the first surface of the ALD layer 16 to the peripheral edge of the second surface of the cover glass 22. The side seal portion 201 has a closed loop shape in a plan view.

[0089] The extension portion 202 extends from the upper end of the inner peripheral surface of the side seal portion 201 toward the inside of the side seal portion 201, and is sandwiched between the planarization layer 19 and the cover glass 22. The extension portion 202 covers a part of the contact electrode 14 such that the inner peripheral portion of the contact electrode 14 protrudes from the inner periphery of the extension portion 202 in a planar view. Since the transmissive portion 142 is provided in the inner peripheral portion of the contact electrode 14, the transmissive portion 142 protrudes from the inner periphery of the extension portion 202 in a planar view.

[0090] The seal portion 20 includes, for example, a curable resin and a black material. The curable resin includes, for example, at least one selected from the group consisting of thermosetting resins and ultraviolet-curable resins. More specifically, for example, the curable resin includes at least one selected from the group consisting of epoxy-based resins and acrylic-based resins. Note that the curable resin is not limited to thermosetting resins and ultraviolet-curable resins, and may include curable resins other than thermosetting resins and ultraviolet-curable resins. The black material includes, for example, at least one black pigment selected from the group consisting of carbon-based black pigments such as carbon black and titanium-based black pigments such as titanium oxynitride (titanium black).

[0091] (Filled Resin Layer 21) The filled resin layer 21 is filled between the color filter 18 and the cover glass 22. The periphery of the filled resin layer 21 is sealed by a sealing portion 20. The filled resin layer 21 is translucent to the light of each color emitted from the color filter 18. The filled resin layer 21 may also function as an adhesive layer that bonds the color filter 18 and the cover glass 22 together.

[0092] The filled resin layer 21 includes, for example, a curable resin. The curable resin includes at least one type selected from the group consisting of a thermosetting resin, an ultraviolet curable resin, etc. Note that the filled resin layer 21 is not limited to a thermosetting resin or an ultraviolet curable resin, and may include a type of curable resin other than a thermosetting resin or an ultraviolet curable resin.

[0093] (Cover Glass 22) The cover glass 22 is provided on the first surface of the filled resin layer 21 and on the first surface of the sealing portion 20. The cover glass 22 seals the first surface side of the drive substrate 11 on which components such as the plurality of light emitting elements 12W are provided. The cover glass 22 is translucent to the light of each color emitted from the color filter 18. The cover glass 22 is made of, for example, a glass substrate.

[0094] [Method for Manufacturing Display Device 101] Hereinafter, an example of a method for manufacturing the display device 101 according to an embodiment will be described.

[0095] (Process for forming drive substrate 11) First, a plurality of drive transistors (not shown) are formed on the first surface side of the substrate 111, and then an insulating layer 112 including a plurality of wirings 113a, one or a plurality of wirings 113b, a plurality of contact plugs 114a, and a plurality of contact plugs 114b is formed on the first surface of the substrate 111. In this way, the drive substrate 11 is obtained.

[0096] (Process for forming first electrodes 121 and contact electrode 14) Next, a metal layer and a metal oxide layer are successively formed on the first surface of the drive substrate 11 by, for example, sputtering, and then the metal layer and the metal oxide layer are patterned by, for example, photolithography. As a result, a plurality of first electrodes 121 and one contact electrode 14 are formed on the first surface of the drive substrate 11.

[0097] (Step of forming insulating layer 13) Next, for example, by CVD (Chemical Vapor Deposition), the insulating layer 13 is formed on the first surface of the drive substrate 11 so as to cover the plurality of first electrodes 121. Next, for example, by photolithography, the insulating layer 13 is processed to form openings 13 a on the first surface of each first electrode 121.

[0098] (Step of Forming OLED Layer 122) Next, for example, by vapor deposition, the hole injection layer 1221, the hole transport layer 1222, the red light-emitting layer 1220R, the light-emitting separation layer 1223, the blue light-emitting layer 1220B, the green light-emitting layer 1220G, the electron transport layer 1224, and the electron injection layer 1225 are laminated in this order on the first surfaces of the plurality of first electrodes 121 and on the first surface of the insulating layer 13. This forms the OLED layer 122 having a single light-emitting unit U. When forming the OLED layer 122, the OLED layer 122 is continuously formed from the display region RE1 to the peripheral region RE2. Here, the step of forming the OLED layer 122 has been described as an example, but the OLED layer 122 is not limited to having a single light-emitting unit U. The OLED layer 122 may have two light-emitting units U1 and U2, or may have another layer structure.

[0099] (Step of Forming Second Electrode 123) Next, the second electrode 123 is formed on the first surface of the OLED layer 122 by, for example, vapor deposition or sputtering. As a result, a plurality of light-emitting elements 12W are formed on the first surface of the drive substrate 11.

[0100] (Step of Forming Protective Layer 15) Next, the protective layer 15 is formed on the first surface of the second electrode 123 by, for example, CVD or vapor deposition.

[0101] (Step of Forming ALD Layer 16) Next, the ALD layer 16 is formed on the first surface of the protective layer 15 by, for example, ALD.

[0102] (Step of Forming Planarizing Layer 17) Next, for example, a photosensitive resin composition is applied onto the first surface of the ALD layer 16, and then the photosensitive resin composition is exposed to light, developed, or the like, to form the planarizing layer 17 on the first surface of the ALD layer 16. At this time, the planarizing layer 17 is formed so that the peripheral edge portion of the first surface of the ALD layer 16 is exposed.

[0103] (Process for forming color filter 18 and light-shielding layer 18BK) Next, a green color resist is applied to the first surface of the planarization layer 17, and is pattern-exposed by ultraviolet irradiation through a photomask, followed by development, thereby forming a green colored layer 18FG. Next, a red color resist is applied to the first surface of the planarization layer 17, and is pattern-exposed by ultraviolet irradiation through a photomask, followed by development, thereby forming a red colored layer 18FR. Next, a blue color resist is applied to the first surface of the planarization layer 17, and is pattern-exposed by ultraviolet irradiation through a photomask, followed by development, thereby forming a blue colored layer 18FB. In this way, the color filter 18 and light-shielding layer 18BK are formed on the first surface of the planarization layer 17.

[0104] (Process for forming planarization layer 19) Next, for example, a photosensitive resin composition is applied to the first surface of color filter 18 and the first surface of light-shielding layer 18BK, and then the photosensitive resin composition is exposed to light, developed, etc., to form planarization layer 19 on the first surface of color filter 18 and the first surface of light-shielding layer 18BK.

[0105] (Assembly Process) Next, a black sealant is applied to the periphery of the first surface of the ALD layer 16 in a closed loop shape surrounding the display region RE1, forming a frame, and then a filling resin is applied inside this frame. Next, a cover glass 22 is placed on the filling resin and sealant. Next, the sealant and filling resin are hardened by at least one of a heat treatment and an ultraviolet light irradiation treatment, for example. The cover glass 22 and the ALD layer 16 are bonded together by a seal portion 20, which is the hardened sealant, and a filling resin layer 21, which is the hardened filler resin, is formed inside the seal portion 20. Note that the hardening method of the filling resin and sealant is not limited to a heat treatment and an ultraviolet light irradiation treatment, and hardening methods other than a heat treatment and an ultraviolet light irradiation treatment may also be used.

[0106] (Modularization Process) Next, the drive substrate 11 on which each layer has been formed as described above is cut out and separated into individual pieces to obtain the display device 101. Next, if necessary, a polarizer 23 is attached to the display surface of the display device 101. Next, if necessary, a flexible printed wiring board is connected to the pad section 24 of the display device 101.

[0107] [Effects] As described above, in the display device 101 according to one embodiment, the black seal portion 20 has an extension portion 202 that covers a range from the outer periphery of the contact electrode 14 toward a predetermined position toward the inner periphery in a plan view. The contact electrode 14 includes a transmissive portion 142 configured to transmit near-infrared light, and the transmissive portion 142 is provided extending beyond the inner periphery of the black seal portion 20 in a plan view. As a result, of the near-infrared light incident on the contact electrode 14 in the peripheral region RE2, a component that enters the black extension portion 202 covering the contact electrode 14 is absorbed by the black extension portion 202. On the other hand, of the near-infrared light, a component that enters the transmissive portion 142 extending beyond the inner periphery of the seal portion 20 in a plan view is transmitted through the transmissive portion 142 and then absorbed by components of the drive substrate 11 (e.g., the substrate 111 and wiring) located below the transmissive portion 142. This suppresses reflection of near-infrared light by the contact electrode 14.

[0108] When the display device 101 according to an embodiment is provided in an eyewear device such as a VR device, an MR device, or an AR device, it is possible to suppress erroneous detection of the gaze caused by reflection of near-infrared light on the contact electrode 14. Therefore, it is possible to suppress a decrease in the accuracy of gaze detection.

[0109] <3 Modifications> [Modification 1] Fig. 4 is a plan view of a display device 101 according to Modification 1. Fig. 5 is a cross-sectional view taken along line V-V in Fig. 4. Fig. 6 is a cross-sectional view taken along line VI-VI in Fig. 4. Fig. 7 is an exploded perspective view of a contact electrode 14. In the display device 101 according to Modification 1, the metal layer 14a has a concave-convex pattern on the inner periphery side in plan view. The concave-convex pattern is repeatedly formed in the circumferential direction of the inner periphery of the metal layer 14a in plan view. The convex portions of the concave-convex pattern protrude from the inner periphery of the seal portion 20 (specifically, the inner periphery of the extension portion 202) in plan view.

[0110] The uneven pattern has, for example, a rectangular wave shape in plan view, however, the shape of the uneven pattern in plan view is not limited to this example and may have, for example, a sine wave shape, a triangular wave shape, or a sawtooth wave shape.

[0111] The portion of the contact electrode 14 formed of a laminated film of the metal layer 14a and the transparent conductive layer 14b forms a reflective portion 141 (see FIGS. 4 and 5). On the other hand, the portion of the contact electrode 14 formed of a single layer of the transparent conductive layer 14b forms a transmissive portion 142 (see FIGS. 4 and 6). The reflective portion 141 and the transmissive portion 142 are alternately arranged in the circumferential direction of the inner periphery of the seal portion 20 in a plan view. The reflective portion 141 is configured to reflect near-infrared light incident through the light-shielding layer 18BK. The transmissive portion 142 is configured to transmit near-infrared light incident through the light-shielding layer 18BK.

[0112] In the display device 101 according to the first modification, the contact electrode 14 has a reflective portion 141 and a transmissive portion 142 in a portion that extends beyond the inner periphery of the sealing portion 20 in a planar view. As a result, a portion of near-infrared light that is incident on the portion that extends beyond the inner periphery of the sealing portion 20 in a planar view is reflected by the reflective portion 141. On the other hand, the remainder of the near-infrared light passes through the transmissive portion 142 and is then absorbed by components of the drive substrate 11 that are located below the transmissive portion 142 (e.g., the substrate 111 and wiring, etc.). Therefore, the reflection of near-infrared light that is incident on the portion that extends beyond the inner periphery of the sealing portion 20 in a planar view is suppressed overall.

[0113] 8 is a cross-sectional view of a peripheral region RE2 of a display device 101 according to Modification 2. In Modification 2, a region where a part of the contact electrode 14 protrudes from the inner periphery of the seal portion 20 in a plan view is referred to as a protruding region 14R.

[0114] The contact electrode 14 in Modification 2 may have a different configuration from the contact electrode 14 in the embodiment. That is, the width of the metal layer 14a may be equal to the width of the transparent conductive layer 14b. Specifically, the metal layer 14a may be provided in a range from the outer periphery to the inner periphery of the contact electrode 14 in a plan view, similar to the transparent conductive layer 14b. However, the contact electrode 14 in Modification 2 may have the same configuration as the contact electrode 14 in the embodiment.

[0115] The protective layer 15 formed on the second electrode 123 constitutes a reflection-suppressing layer that can suppress reflection of near-infrared light of a specific wavelength by utilizing thin-film interference in the protruding region 14R. The specific wavelength is, for example, approximately 850 nm or approximately 940 nm. The protective layer 15 formed on the second electrode 123 may also be configured to suppress reflection of near-infrared light of a specific wavelength by utilizing thin-film interference in the display region RE1.

[0116] The anti-reflection layer may be composed of a multilayer film capable of suppressing reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference. The multilayer film may include, for example, a first protective layer and a second protective layer provided on the first protective layer. However, the number of layers in the multilayer film is not limited to two, and may be three or more. The first protective layer and the second protective layer have different refractive indices. The first protective layer and the second protective layer may be composed of different materials. Examples of materials for the first protective layer and the second protective layer include the same materials as those for the protective layer 15 in one embodiment. Specifically, for example, the first protective layer may be made of silicon oxide (SiO ｘ The second protective layer includes silicon nitride (SiN ｘ ) is included.

[0117] In the display device 101 according to the second modification, the protective layer 15 formed on the second electrode 123 in the protruding region 14R constitutes a reflection-suppressing layer that can suppress reflection of near-infrared light of a specific wavelength by utilizing thin-film interference, thereby suppressing reflection of near-infrared light that enters the protruding region 14R.

[0118] When the protective layer 15 has a portion formed on the first surface of the contact electrode 14 in the protruding region 14R, this portion may form an antireflection layer. That is, the portion of the protective layer 15 formed on the contact electrode 14 may form an antireflection layer in the protruding region 14R that is capable of suppressing reflection of near-infrared light of a specific wavelength by utilizing thin film interference.

[0119] In the above-described eighth modification, the protective layer 15 formed on the second electrode 123 constitutes a multilayer film capable of suppressing reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference. However, the configuration of the multilayer film is not limited to this example. For example, (1) a multilayer film constituted by the second electrode 123 and the protective layer 15 stacked on the OLED layer 122, (2) a multilayer film constituted by the second electrode 123, the protective layer 15, and the ALD layer 16 stacked on the OLED layer 122, (3) a multilayer film constituted by the OLED layer 122, the second electrode 123, and the protective layer 15 stacked on the contact electrode 14, or (4) a multilayer film constituted by the OLED layer 122, the second electrode 123, the protective layer 15, and the ALD layer 16 stacked on the contact electrode 14 may be configured to suppress reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference. In the multilayer films (1) to (4) above, the protective layer 15 may be composed of a single layer film, or may be composed of a multilayer film of two or more layers (e.g., a first protective layer and a second protective layer).

[0120] 9 is a cross-sectional view of the peripheral region RE2 of a display device 101 according to Modification 3. In the display device 101 according to Modification 3, the contact electrode 14 includes a metal layer 14a, a transparent conductive layer 14b, and a conductive layer 14c, in this order, from the rear surface of the display device 101 toward the display surface. The transparent conductive layer 14b is an example of a first conductive layer, and the conductive layer 14c is an example of a second conductive layer.

[0121] In Modification 3, the width of the metal layer 14 a is equal to the width of the transparent conductive layer 14 b. Specifically, like the transparent conductive layer 14 b, the metal layer 14 a is provided in a range from the outer periphery to the inner periphery of the contact electrode 14 in a plan view.

[0122] The conductive layer 14c has a closed loop shape in plan view. The conductive layer 14c has a width equal to that of the transparent conductive layer 14b and is provided across the entire first surface of the transparent conductive layer 14b. That is, like the transparent conductive layer 14b, the conductive layer 14c is provided in a range from the outer periphery to the inner periphery of the contact electrode 14 in plan view. As a result, the conductive layer 14c, together with the metal layer 14a and the transparent conductive layer 14b, protrudes from the inner periphery of the black seal portion 20 in plan view. The conductive layer 14c is conductive and is configured to be transmissive to near-infrared light. The refractive index of the conductive layer 14c is different from that of the transparent conductive layer 14b. Here, the refractive index refers to the refractive index for near-infrared light.

[0123] The transparent conductive layer 14b and conductive layer 14c stacked on the metal layer 14a form a multilayer film on the sealing portion 20 side of the contact electrode 14 that can suppress the reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference. The specific wavelength is, for example, approximately 850 nm or approximately 940 nm. The wavelength of near-infrared light that can suppress reflection is adjusted, for example, by adjusting the refractive index of the transparent conductive layer 14b and the conductive layer 14c and the thickness of the transparent conductive layer 14b and the conductive layer 14c.

[0124] When the reflection spectrum of the reflected light reflected at the first surface of the contact electrode 14 has ripples that vary periodically with the wavelength of the reflected light, it is preferable that the reflection spectrum has a minimum value at approximately 850 nm or approximately 940 nm.

[0125] The conductive layer 14c includes, for example, a metal compound. The metal compound is, for example, titanium nitride (TiN ｘ The transparent conductive layer 14b contains a transparent conductive oxide such as indium tin oxide (ITO), and the conductive layer 14c contains titanium nitride (TiN ｘ ) may also be included.

[0126] In the display device 101 according to the third modification, the contact electrode 14 includes, in order from the rear surface of the display device 101 toward the display surface, a metal layer 14a, a transparent conductive layer 14b, and a conductive layer 14c. The transparent conductive layer 14b and the conductive layer 14c stacked on the metal layer 14a form a multilayer film capable of suppressing reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference. Therefore, the multilayer film suppresses reflection of near-infrared light incident on a portion of the contact electrode 14 that extends beyond the inner periphery of the seal portion 20 in a plan view.

[0127] In the above example, the transparent conductive layer 14b and the conductive layer 14c stacked on the metal layer 14a constitute a multilayer film that can suppress reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference. However, the configuration of the multilayer film is not limited to this example. For example, (1) a multilayer film composed of a transparent conductive layer 14b, a conductive layer 14c, and an OLED layer 122 stacked on a metal layer 14a; (2) a multilayer film composed of a transparent conductive layer 14b, a conductive layer 14c, an OLED layer 122, and a second electrode 123 stacked on a metal layer 14a; (3) a multilayer film composed of a transparent conductive layer 14b, a conductive layer 14c, an OLED layer 122, a second electrode 123, and a protective layer 15 stacked on a metal layer 14a; or (4) a multilayer film composed of a transparent conductive layer 14b, a conductive layer 14c, an OLED layer 122, a second electrode 123, a protective layer 15, and an ALD layer 16 stacked on a metal layer 14a may be configured to be able to suppress reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference.

[0128] [Variation 4] In Variation 3, an example was described in which the conductive layer 14c has a width equal to that of the transparent conductive layer 14b and is provided over the entire first surface of the transparent conductive layer 14b. However, the conductive layer 14c may be provided on at least a portion of the first surface of the transparent conductive layer 14b that extends beyond the inner periphery of the sealing portion 20 (the inner periphery of the extension portion 202) in a plan view, and the formation range of the conductive layer 14c is not limited to the example of Variation 3. For example, as shown in FIG. 10 , the conductive layer 14c may be provided in a range from the inner periphery of the transparent conductive layer 14b to the inner periphery of the sealing portion 20 in a plan view, or in a range from the inner periphery of the transparent conductive layer 14b to a position behind the inner periphery of the sealing portion 20 in a plan view.

[0129] 11 is a cross-sectional view of the peripheral region RE2 of a display device 101 according to Modification 5. The display device 101 may further include a black filter (colored layer) 25. In Modification 5, the width of the metal layer 14a may be equal to the width of the transparent conductive layer 14b. That is, in Modification 5, the metal layer 14a may be provided in a range from the outer periphery to the inner periphery of the contact electrode 14 in a planar view, similar to the transparent conductive layer 14b. However, the configuration of the contact electrode 14 is not limited to this, and the contact electrode 14 may have a configuration similar to that of the contact electrode 14 in the embodiment.

[0130] The black filter (colored layer) 25 is configured to be able to absorb visible light and near-infrared light incident toward the contact electrodes 14 in the peripheral region RE2. The black filter 25 is provided on the first surface of the light-shielding layer 18BK and covers the upper side of the contact electrodes 14. The black filter (colored layer) 24 also covers the side surface on the outer periphery of the light-shielding layer 18BK. When the black filter 25 covers the entire first surface of the light-shielding layer 18BK, the seal portion 20 may or may not be black.

[0131] The area where the black filter 25 is provided is not limited to the above example. For example, the black filter 25 may be provided only on the first surface of the light-shielding layer 18BK, or may be provided only on a portion of the first surface of the light-shielding layer 18BK. When the black filter 25 is provided only on a portion of the first surface of the light-shielding layer 18BK, it is preferable that the black filter 25 covers the portion of the first surface of the light-shielding layer 18BK that extends beyond the inner periphery of the seal portion 20 in a planar view. In other words, it is preferable that the black filter 25 covers the portion of the contact electrode 14 that extends beyond the inner periphery of the seal portion 20 in a planar view.

[0132] The black filter 25 includes, for example, a black material. Examples of the black material include the same black material as that included in the seal portion 20. The black filter 25 may include, for example, a black resist. A specific example of the black resist is a resist for a black matrix of a display device.

[0133] The display device 101 according to the fifth modification further includes a black filter 25 on the first surface of the light-shielding layer 18BK. This allows the black filter 25 and the light-shielding layer 18BK to absorb visible light incident toward the contact electrodes 14 in the peripheral region RE2. Furthermore, the black filter 25 can absorb near-infrared light incident toward the contact electrodes 14 in the peripheral region RE2. This makes it possible to suppress reflection of near-infrared light by the contact electrodes 14.

[0134] [Variation 6] In Variation 5, an example was described in which the display device 101 includes both the light-shielding layer 18BK and the black filter 25. However, the configuration of the display device 101 is not limited to this example, and the display device 101 may include only the black filter 25. In this case, the black filter 25 may be provided on the first surface of the planarization layer 17 in the peripheral region RE2. When the black filter 25 covers the entire contact electrode 14, the sealing portion 20 may or may not be black.

[0135] In the display device 101 according to the sixth modification, the visible light and near-infrared light incident toward the contact electrodes 14 in the peripheral region RE2 can be absorbed by the black filters 25. Therefore, the reflection of the visible light and near-infrared light by the contact electrodes 14 can be suppressed.

[0136] [Variation 7] The light-shielding layer 18BK, more specifically, one or both of the colored layers 18FR and 18FB included in the light-shielding layer 18BK, may be configured to absorb near-infrared light. In this case, the contact electrode 14 may have the same configuration as the contact electrode 14 in the embodiment, or may have a different configuration from the contact electrode 14 in the embodiment. An example of a contact electrode 14 having the latter configuration is that described in Variation 2. Note that in Variation 7, the seal portion 20 may or may not be black.

[0137] In the display device 101 according to the seventh modification, the light-shielding layer 18BK is configured to be able to absorb near-infrared light. This allows the light-shielding layer 18BK to absorb near-infrared light that is incident toward the contact electrodes 14 in the peripheral region RE2. Therefore, reflection of near-infrared light by the contact electrodes 14 can be suppressed.

[0138] 12 , the display device 101 according to the eighth modification further includes a lens array 26. The lens array 26 is provided on the first surface of the planarization layer 19, and the lens surface (light-collecting surface) of the lens array 26 is covered with the filled resin layer 21.

[0139] The lens array 26 includes a plurality of lenses 261. The lenses 261 can focus light emitted upward from the light-emitting element 12W and incident through the colored layer 18F in a forward direction. The lenses 261 are convex lenses having a convex focusing surface on the side opposite to the light-emitting element 12W. The focusing surface of the lenses 261 preferably has a convex curved surface shape. The plurality of lenses 261 are so-called on-chip microlenses (OCLs), and are two-dimensionally arranged on the first surface of the planarization layer 19 in a predetermined arrangement pattern. The predetermined arrangement pattern is as described above for the predetermined arrangement pattern of the plurality of subpixels 10. The center of the lens 261 may substantially coincide with the center of the light-emitting region of the light-emitting element 12W in a planar view.

[0140] The refractive index n of the lens 261 １ is the refractive index n of the filled resin layer 21 ２ is preferably higher than (n ２ <n １ The refractive index n of the lens 261 １ is the refractive index n of the filled resin layer 21 ２ , the light can be refracted and focused at the interface between the lens 261 and the filled resin layer 21. Therefore, the light extraction function can be improved.

[0141] The lens 261 includes, for example, an organic material or an inorganic material that is transparent to visible light. The organic material includes, for example, a cured product of a photosensitive resin composition such as an ultraviolet curable resin composition. The inorganic material includes, for example, silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ The lens 261 may contain a filler. By adjusting the content of the filler contained in the lens 261, the refractive index n １ The filler may be an inorganic filler. The inorganic filler may be, for example, aluminum oxide (AlO ｘ ), titanium oxide (TiO ｘ ) and zirconium oxide (ZrO ｘThe filler may be a hollow filler.

[0142] As described above, by providing the display device 101 with the lens array 26 above the color filter 18, the light emitted from the color filter 18 can be condensed by the lens array 26. Therefore, the light extraction efficiency of the display device 101 can be improved.

[0143] [Variation 9] Similar to the first electrodes 121, the second electrodes 123 may be divided between adjacent light-emitting elements 12W in the in-plane direction of the first surface of the drive substrate 11. In this case, the display device 101 may include auxiliary electrodes connected to each of the divided second electrodes 123, and the auxiliary electrodes may be connected to the contact electrodes 14.

[0144] [Modification 10] In the above embodiment, an example was described in which the display device 101 includes a plurality of light-emitting elements 12W capable of emitting white light and a color filter 18, and a combination of these elements is used to display a color image. However, the colorization method of the display device 101 is not limited to this. For example, instead of the plurality of light-emitting elements 12W capable of emitting white light, the display device 101 may include a plurality of light-emitting elements capable of emitting red light, a plurality of light-emitting elements capable of emitting green light, and a plurality of light-emitting elements capable of emitting blue light. In this case, the color filter is not an essential component and may or may not be included.

[0145] The light-emitting element capable of emitting light of a predetermined color (red light, green light, or blue light) is, for example, (1) a light-emitting element including a light-emitting layer capable of emitting light of a predetermined color (red light, green light, or blue light); (2) a light-emitting element including a light-emitting layer capable of emitting white light and capable of resonating and emphasizing light of a predetermined wavelength (red light, green light, or blue light) contained in the white light emitted by the light-emitting layer using a resonator structure; or (3) a light-emitting element including a light-emitting layer capable of emitting light of a predetermined color (red light, green light, or blue light) and capable of resonating and emphasizing light of a predetermined wavelength contained in the light of a predetermined color emitted by the light-emitting layer using a resonator structure.

[0146] [Variation 11] Throughout the entire display region RE1, the center of the colored layer 18F may be approximately aligned with the center of the light-emitting region of the light-emitting element 12W in the in-plane direction. However, the positional relationship between the colored layer 18F and the light-emitting element 12W is not limited to this example. For example, in the central portion of the display region RE1, the center of the colored layer 18F may be approximately aligned with the center of the light-emitting region of the light-emitting element 12W in the in-plane direction, whereas in the peripheral portion of the display region RE1, the center of the colored layer 18F may be offset toward the outer periphery of the display region RE1 in the in-plane direction relative to the center of the light-emitting region of the light-emitting element 12W. In this case, the principal ray axis in the peripheral portion of the display region RE1 can be tilted outward from the display region RE1 relative to the normal (Z-axis) to the display surface. This allows the display device 101 to have a wide FOV (Field of View).

[0147] As described in Modification 8, when the display device 101 includes the lens array 26, in the central part of the display region RE1, the centers of the colored layer 18F and the lenses 261 substantially coincide with the center of the light-emitting region of the light-emitting element 12W in the in-plane direction, whereas in the peripheral part of the display region RE1, the centers of the colored layer 18F and the lenses 261 may be shifted toward the outer periphery of the display region RE1 in the in-plane direction with respect to the center of the light-emitting region of the light-emitting element 12W. Details of the positional relationship between the light-emitting element 12W, the colored layer 18F, and the lenses 261 will be described in "5. Relationship between normals passing through the centers of the light-emitting unit, lens member, and wavelength selection unit."

[0148] [Modification 12] From the viewpoint of improving the light extraction efficiency and / or improving the color purity, the light emitting element 12W may have a resonator structure.

[0149] When the first electrode 121 is a reflective electrode that functions as a reflective layer, a resonator structure may be formed by the first electrode 121 and the second electrode 123. In this case, the optical distance between the first electrode 121 and the second electrode 123 may be set by the thickness of the OLED layer 122, by selecting the material of the first electrode 121, or by a combination of these.

[0150] When the first electrode 121 is a transparent electrode, a reflective layer may be provided below the transparent electrode, and a resonator structure may be formed by the reflective layer and the second electrode 123. In this case, the optical distance between the reflective layer and the second electrode 123 may be set by the thickness of the OLED layer 122, by selecting the material of the reflective layer, by the thickness of an insulating layer provided between the first electrode 121 (transparent electrode) and the reflective layer, or by a combination of two or more of these. Details of the resonator structure will be described in "6. Examples of Resonator Structures."

[0151] [Modification 13] In the above embodiment, an example in which the color filter 18 is provided has been described, but a quantum dot layer may be provided instead of the color filter 18, or a quantum dot layer may be provided together with the color filter 18. The quantum dot layer is a color conversion layer that contains quantum dots (semiconductor particles) and can convert the color of light emitted from the plurality of light-emitting elements 12W. In this case, the plurality of light-emitting elements 12W may be configured to emit blue light.

[0152] [Modification 14] In the above embodiment, an example has been described in which the light-emitting element 12W is an OLED element. However, the light-emitting element 12W is not limited to this example and may be, for example, a self-luminous light-emitting element such as an LED (Light Emitting Diode) element, an inorganic electroluminescence (IEL) element, a quantum dot light-emitting diode (QLED) element, or a semiconductor laser element. Two or more types of light-emitting elements may be provided in the display device 101.

[0153] [Variation 15] In the above embodiment, an example was described in which the first electrode 121 is an anode electrode and the second electrode 123 is a cathode electrode. However, the first electrode 121 and the second electrode 123 are not limited to this example, and the first electrode 121 may be a cathode electrode and the second electrode 123 may be an anode electrode.

[0154] [Other Modifications] Although one embodiment of the present disclosure and its modifications (hereinafter referred to as "one embodiment, etc.") have been specifically described above, the present disclosure is not limited to one embodiment, etc., and various modifications based on the technical concept of the present disclosure are possible.

[0155] For example, the configurations, methods, steps, shapes, materials, and numerical values ​​given in one embodiment are merely examples, and different configurations, methods, steps, shapes, materials, and numerical values ​​may be used as necessary.

[0156] The configurations, methods, steps, shapes, materials, numerical values, etc. of the embodiments may be combined with one another without departing from the spirit of the present disclosure.

[0157] Unless otherwise specified, the materials exemplified in the embodiments and the like can be used singly or in combination of two or more.

[0158] The present disclosure may also employ the following configurations. (1) A display device comprising: an electrode provided on the periphery of a display area; and a black seal portion covering the electrode such that a portion of the electrode protrudes in a planar view, wherein the electrode has a transmissive portion capable of transmitting near-infrared light in a portion protruding from the seal portion in the planar view. (2) The display device according to (1), wherein the transmissive portion includes a transparent conductive layer. (3) The display device according to (2), wherein the electrode has a reflective portion capable of reflecting near-infrared light in a portion covered by the seal portion in the planar view, the reflective portion including a metal layer and the transparent conductive layer provided on the metal layer. (4) The display device according to (3), wherein the electrode has the reflective portion together with the transmissive portion in a portion protruding from the seal portion in the planar view. (5) The display device according to any one of (1) to (4), further comprising a member capable of absorbing near-infrared light provided below the transmissive portion. (6) The display device according to any one of (1) to (5), comprising a plurality of pixels provided in the display region, the plurality of pixels sharing a pixel electrode, the pixel electrode extending from the display region to a periphery of the display region and connected to the electrode. (7) The display device according to any one of (1) to (6), wherein the electrode has a loop shape surrounding the display region in the plan view, and the portion protruding from the seal portion in the plan view includes a portion of the electrode on the inner periphery in the plan view. (8) A display device comprising: an electrode provided on the periphery of the display region; and a black seal portion covering the electrode so that a portion of the electrode protrudes in the plan view, the electrode including a multilayer film on the seal portion side that can suppress reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference. (9) The display device according to (8), wherein the electrode further includes a metal layer, and the multilayer film includes a first conductive layer having light transmission and a second conductive layer having light transmission, in that order, on the metal layer. (10) The display device according to (9), wherein the second conductive layer is provided on a part of one surface of the first conductive layer and protrudes from the sealing portion in the plan view.(11) The display device according to (9) or (10), wherein the first conductive layer contains indium tin oxide, and the second conductive layer contains titanium nitride. (12) A display device comprising: an electrode provided on the periphery of a display area; a black seal portion covering the electrode such that a portion of the electrode protrudes in a planar view; and a reflection suppressing layer that suppresses reflection of near-infrared light of a specific wavelength that is incident on the portion protruding from the seal portion in the planar view. (13) The display device according to (12), wherein the reflection suppressing layer is a multilayer film that can suppress reflection of near-infrared light of the specific wavelength by utilizing multilayer film interference. (14) The display device according to (13), wherein the multilayer film includes a first protective layer and a second protective layer having different refractive indices. (15) The display device according to (14), wherein the first protective layer contains silicon oxide, and the second protective layer contains silicon nitride. (16) An electronic device comprising the display device according to any one of (1) to (15).

[0159] <4 Examples of Leakage Suppression Structure> The OLED layer 122 of the display device 101 according to one embodiment and the display device 101 according to one variation thereof (hereinafter referred to as "the display device 101 according to one embodiment, etc.") is connected between adjacent light-emitting elements 12W in the in-plane direction of the first surface of the drive substrate 11, and is a layer common to multiple light-emitting elements 12W. For this reason, in the display device 101 according to one embodiment, etc., there is a risk of current leakage occurring between adjacent light-emitting elements 12W. Below, examples of leakage suppression structures for suppressing such current leakage between light-emitting elements 12W will be described. Note that in the following first to seventh examples, examples will be described in which the OLED layer 122 has two light-emitting units U1 and U2. Below, the light-emitting element 12W may be referred to as the light-emitting element 12.

[0160] (Leakage Suppression Structure: First Example) Fig. 13 is a cross-sectional view of a first example of the leakage suppression structure. Note that in Fig. 13, layers above the second electrode 123 are not shown. Similarly, in the cross-sectional views for explaining the leakage suppression structures of the second to ninth examples, layers above the second electrode 123 are not shown.

[0161] The insulating layer 13 has openings 13a above each first electrode 121, and covers the periphery of the first surface of the first electrode 121 and the side surfaces (end surfaces) of the first electrodes 121. Specifically, the insulating layer 13 has side wall portions 13b and extension portions 13c. The side wall portions 13b are erected perpendicular to the first surface of the drive substrate 11 and cover the side surfaces of the first electrodes 121. The extension portions 13c extend from the upper ends of the inner circumferential surfaces of the side wall portions 13b toward the center of the first surface of the first electrodes 121 and cover the periphery of the first surfaces of the first electrodes 121.

[0162] The inner periphery of the opening 13a in the insulating layer 13 has a canopy-like protruding portion 132b that protrudes toward the center of the opening 13a. The protruding portion 132b is spaced apart from the first surface of the first electrode 121. The protruding portion 132b is preferably provided around the entire periphery of the opening 13a, but may be provided on a portion of the entire periphery of the opening 13a.

[0163] The light-emitting unit U1 and the charge generation layer 1227 included in the OLED layer 122 are disconnected or made highly resistant by the overhanging portion 132b (region A shown in FIG. 13 ). This makes it possible to suppress current leakage between adjacent light-emitting elements 12. Here, "high resistance" refers to the light-emitting unit U1 and the charge generation layer 1227 becoming extremely thin at the overhanging portion 132b, resulting in high resistance. The disconnection or high resistance of the light-emitting unit U1 and the charge generation layer 1227 caused by the overhanging portion 132b can occur due to the shadowing effect of the overhanging portion 132b during film formation of the OLED layer 122. A gap 132c may be formed between the overhanging portion 132b and the first electrode 121.

[0164] The insulating layer 13 has a first insulating layer 131 and a second insulating layer 132, which are arranged in this order on the first surface of the drive substrate 11 and the first surface of the first electrode 121. The first insulating layer 131 has a plurality of first openings 131a. The second insulating layer 132 has a plurality of second openings 132a. The opening 13a is composed of overlapping first openings 131a and second openings 132a. The inner periphery of the second opening 132a in the second insulating layer 132 protrudes further inward from the opening 13a than the inner periphery of the first opening 131a in the first insulating layer 131, forming a protruding portion 132b.

[0165] 14 is a cross-sectional view of a second example of the leakage suppression structure. The second example differs from the first example in that the insulating layer 13 includes a third insulating layer 133 in addition to the first insulating layer 131 and the second insulating layer 132.

[0166] The third insulating layer 133 is provided between the drive substrate 11 and the first insulating layer 131, and between the first electrode 121 and the first insulating layer 131. The third insulating layer 133 has a third opening 133a on the first surface of the first electrode 121. In the second example, the opening 13a is composed of a first opening 131a, a second opening 132a, and a third opening 133a that are overlapped with each other. The inner periphery of the third opening 133a protrudes further inward than the inner periphery of the first opening 131a. A gap 132c may be formed between the protruding portion 132b and the third insulating layer 133.

[0167] (Leakage Suppression Structure: Third and Fourth Examples) In the first and second examples, examples have been described in which the inner periphery of the opening 13a in the insulating layer 13 has one protruding portion 132b. However, the number of protruding portions that the inner periphery of the opening 13a in the insulating layer 13 has is not limited to these examples, and the inner periphery of the opening 13a in the insulating layer 13 may have two or more protruding portions. Below, an example (third example) in which the inner periphery of the opening 13a in the insulating layer 13 has two protruding portions and an example (fourth example) in which the inner periphery of the opening 13a in the insulating layer 13 has three protruding portions will be described.

[0168] 15 is a cross-sectional view of a third example of the leakage suppression structure. The third example differs from the second example in that insulating layer 13 has fourth insulating layer 134 and fifth insulating layer 135, in that order, on the first surface of second insulating layer 132, and that the inner periphery of opening 13a in insulating layer 13 has two eave-shaped protrusions 132b and 135b.

[0169] The light-emitting unit U1 and the charge generation layer 1227 included in the OLED layer 122 are cut or made highly resistant by the overhanging portion 132b and the overhanging portion 135b. The overhanging portion 135b is provided at a higher position than the overhanging portion 132b with respect to the first surface of the first electrode 121, and is spaced apart from the first surface of the second insulating layer 132. The overhanging portion 135b is set back more away from the center of the opening 13a than the overhanging portion 132b.

[0170] The fourth insulating layer 134 has a fourth opening 134a. The fifth insulating layer 135 has a fifth opening 135a. In the third example, the opening 13a is composed of a first opening 131a, a second opening 132a, a third opening 133a, a fourth opening 134a, and a fifth opening 135a that are overlapping each other. The inner periphery of the fourth opening 134a is recessed in a direction away from the center of the opening 13a relative to the inner peripheries of the second opening 132a and the fifth opening 135a. The inner periphery of the fifth opening 135a protrudes more inward from the opening 13a than the fourth opening 134a, forming a protruding portion 135b.

[0171] 16 is a cross-sectional view of a fourth example of the leakage suppression structure. The fourth example differs from the third example in that insulating layer 13 has sixth insulating layer 136 and seventh insulating layer 137 in this order on the first surface of fifth insulating layer 135, and the inner periphery of opening 13a in insulating layer 13 has three eave-like protrusions 132b, 135b, and 137b.

[0172] The light-emitting unit U1 and the charge generation layer 1227 included in the OLED layer 122 are cut or made highly resistant by the overhanging portion 132b, the overhanging portion 135b, and the overhanging portion 137b. The overhanging portion 137b is provided at a higher position than the overhanging portion 135b with respect to the first surface of the first electrode 121, and is spaced apart from the first surface of the fifth insulating layer 135. The overhanging portion 137b is set back more away from the center of the opening 13a than the overhanging portion 135b.

[0173] The sixth insulating layer 136 has a sixth opening 136a. The seventh insulating layer 137 has a seventh opening 137a. In the fourth example, the opening 13a is composed of a first opening 131a, a second opening 132a, a third opening 133a, a fourth opening 134a, a fifth opening 135a, a sixth opening 136a, and a seventh opening 137a, which are all overlapping each other. The inner periphery of the sixth opening 136a is recessed in a direction away from the center of the opening 13a from the inner peripheries of the fifth opening 135a and the seventh opening 137a. The inner periphery of the seventh opening 137a protrudes inward from the sixth opening 136a, forming a protruding portion 137b.

[0174] 17 is a cross-sectional view of a fifth example of a leakage suppression structure. The fifth example differs from the second example in that insulating layer 13 includes first insulating layer 131, second insulating layer 132, and third insulating layer 133, as well as eighth insulating layer 138, and that the inner periphery of opening 13a in insulating layer 13 includes two eave-shaped protrusions 132b and 133b.

[0175] The light-emitting unit U1 and the charge generation layer 1227 included in the OLED layer 122 are cut or made highly resistant by the overhanging portion 132b and the overhanging portion 133b. The overhanging portion 133b overhangs more inwardly of the opening 13a than the overhanging portion 132b. The overhanging portion 133b is located at a lower position than the overhanging portion 132b with respect to the first surface of the first electrode 121. The overhanging portion 133b is spaced apart from the first surface of the first electrode 121.

[0176] The eighth insulating layer 138 is provided between the drive substrate 11 and the third insulating layer 133, and between the first electrode 121 and the third insulating layer 133. The eighth insulating layer 138 has an eighth opening 138a. In the fifth example, the opening 13a is composed of a first opening 131a, a second opening 132a, a third opening 133a, and an eighth opening 138a, which are overlapped with each other. The inner periphery of the third opening 133a in the third insulating layer 133 protrudes further inward from the opening 13a than the inner periphery of the eighth opening 138a in the eighth insulating layer 138, thereby forming a protruding portion 133b.

[0177] (Leakage Suppression Structure: Sixth Example) Figure 18 is a cross-sectional view of a sixth example of a leakage suppression structure. The sixth example differs from the first example in that the insulating layer 13 has a protruding portion 13b1 on the outer periphery of the side wall portion 13b instead of having a protruding portion 132b on the inner periphery of the opening 13a. Although Figure 18 shows an example in which the insulating layer 13 has a single-layer structure, it may also have a laminated structure of two or more layers.

[0178] The protruding portion 13b1 protrudes outward from the outer periphery of the side wall portion 13b. A recess 13b2 is provided at a position a predetermined distance below the upper end of the outer periphery of the side wall portion 13b. By providing the recess 13b2 on the outer periphery of the side wall portion 13b in this manner, the protruding portion 13b1 is configured at the upper end of the outer periphery of the side wall portion 13b. The protruding portion 13b1 and the recess 13b2 are preferably provided around the entire periphery of the side wall portion 13b, but may be provided on a portion of the entire periphery of the side wall portion 13b.

[0179] The light-emitting unit U1 and the charge generating layer 1227 included in the OLED layer 122 are cut or made highly resistant by the protruding portion 132b (area A shown in FIG. 18 ), which makes it possible to suppress current leakage between adjacent light-emitting elements 12.

[0180] In the sixth example, the outer periphery of the side wall portion 13b has one protrusion 13b1 and one recess 13b2. However, the number of protrusions 13b1 and recesses 13b2 on the outer periphery of the side wall portion 13b is not limited to this example, and the outer periphery of the side wall portion 13b may have two or more protrusions 13b1 and two or more recesses 13b2. In this case, the two or more recesses 13b2 may be arranged sequentially at a predetermined distance from the upper end to the lower end of the outer periphery of the side wall portion 13b.

[0181] (Leakage Suppression Structure: Seventh Example) Fig. 19 is a cross-sectional view of a seventh example of the leakage suppression structure. A groove 13Gv is provided between adjacent light-emitting elements 12. The groove 13Gv may be provided between light-emitting elements 12 adjacent in a predetermined direction (e.g., the Y-axis direction), or may be provided so as to surround the light-emitting element 12. The groove 13Gv is formed across the insulating layer 13 and the insulating layer 112.

[0182] The light-emitting unit U1 and the charge generation layer 1227 included in the OLED layer 122 are cut or made highly resistive by the groove 13Gv. This makes it possible to suppress current leakage between adjacent light-emitting elements 12. Here, "high resistance" means that the light-emitting unit U1 and the charge generation layer 1227 have extremely thin film thicknesses within the groove 13Gv, thereby making them highly resistive, as shown in FIG. 20 . Of the layers included in the OLED layer 122, the light-emitting unit U2 located above the charge generation layer 1227 straddles the groove 13Gv.

[0183] (Leakage Suppression Structure: Eighth Example) FIG. 21 is a cross-sectional view of an eighth example of the leakage suppression structure. A plurality of wirings 112a, a plurality of contact plugs 112b, and a plurality of contact electrodes 112c are provided in the insulating layer 112. Each contact plug 112b electrically connects the first electrode 121 and the wiring 112a. A groove 13Gv is provided between adjacent light-emitting elements 12. The bottom surface of the groove 13Gv is formed by the first surface of the contact electrode 112c. An auxiliary electrode 112d is provided on the side surface of each groove 13Gv. The auxiliary electrode 112d is in contact with the first surface of the contact electrode 112c.

[0184] The OLED layer 122 is cut by the grooves 13Gv. While FIG. 21 shows an example in which the second electrode 123 is also cut by the grooves 13Gv, the second electrode 123 may not be cut by the grooves 13Gv and may be connected between adjacent light-emitting elements 12. The second electrode 123 is in contact with the auxiliary electrode 112d on the side surface of the groove 13Gv. The second electrode 123 is in contact with the contact electrode 112c on the bottom surface of the groove 13Gv. A protective layer 15 may be provided on the first surface of the second electrode 123 so as to follow the shape of the second electrode 123.

[0185] In the eighth example, the leakage current between adjacent light emitting elements 12 can be drawn into the auxiliary electrode 112d and the contact electrode 112c. Therefore, the current leakage between adjacent light emitting elements 12 can be suppressed.

[0186] (Leakage Suppression Structure: Ninth Example) Fig. 22 is a cross-sectional view of a ninth example of the leakage suppression structure. In the ninth example, the display device 101 includes a plurality of third electrodes 125. The plurality of third electrodes 125 are provided on the second surface side of the OLED layer 122, similar to the plurality of first electrodes 121. Each third electrode 125 is disposed between adjacent first electrodes 121.

[0187] 23 is a plan view illustrating the arrangement of the first electrodes 121 and the third electrodes 125. The multiple third electrodes 125 are a group of island-shaped electrodes having a smaller area than the first electrodes 121. The multiple third electrodes 125 are regularly arranged so as to be equally spaced from adjacent first electrodes 121 in a plan view. From another perspective, the multiple third electrodes 125 are arranged at a predetermined distance from each first electrode 121 and so as to surround it in a plan view.

[0188] A plurality of wirings 112a, a plurality of wirings 112e, a plurality of contact plugs 112b, and a plurality of contact plugs 112f are provided in the insulating layer 112. Each contact plug 112b electrically connects the first electrode 121 to the wiring 112a. Each contact plug 112f electrically connects the third electrode 125 to the wiring 112e.

[0189] The plurality of third electrodes 125 are connected to the internal circuitry of the display device 101 via contact plugs 112f, wiring 112e, etc., and are set to a common constant potential. Specifically, when a voltage is applied to the OLED layer 122, the potential of the third electrodes 125 is set to be smaller than the sum of the potential of the second electrodes 123 and the threshold voltage for the OLED layer 122. As a result, even if a voltage is applied to the OLED layer 122 by the first electrodes 121 and the second electrodes 123, causing a leakage current from the first electrodes 121, the leakage current flows preferentially to the third electrodes 125. This prevents the leakage current from flowing from the first electrodes 121 to adjacent first electrodes 121.

[0190] (Leakage Suppression Structure: Other Examples) In the first to seventh examples, the OLED layer 122 has two light-emitting units U1 and U2. However, the configuration of the OLED layer 122 is not limited to these examples, and the OLED layer 122 may have a single light-emitting unit U, or may have three or more light-emitting units U.

[0191] In the first to seventh examples, the light-emitting unit U1 and the charge generation layer 1227 included in the OLED layer 122 are cut or made highly resistant by the overhanging portions 132b, 133b, 135b, 137b, and 13b1 and the grooves 13Gv (hereinafter referred to as "overhanging portions 132b and grooves 13Gv, etc."). However, the layers that are cut or made highly resistant by the overhanging portions 132b and grooves 13Gv, etc. are not limited to these examples. For example, the hole injection layer 1221 or the hole transport layer 1222 included in the OLED layer 122 may be cut or made highly resistant by the overhanging portions 132b and grooves 13Gv, etc., or both the hole injection layer 1221 and the hole transport layer 1222 included in the OLED layer 122 may be cut or made highly resistant by the overhanging portions 132b and grooves 13Gv, etc. When the OLED layer 122 has three or more light-emitting units U, two or more light-emitting units U and two or more charge generating layers 1227 included in the OLED layer 122 may be cut or made highly resistant by the protrusion 132b and the groove 13Gv, etc.

[0192] <5 Relationship between normals passing through the centers of the light-emitting unit, lens member, and wavelength selection unit> Below, the relationship between the normal LN passing through the center of the light-emitting unit, the normal LN' passing through the center of the lens member, and the normal LN" passing through the center of the wavelength selection unit will be described. Here, the light-emitting unit is, for example, the light-emitting element 12W (see FIG. 12 for example). The lens member is, for example, the lens 261 (see FIG. 12 for example). The wavelength selection unit is, for example, the colored layer 18F (see FIG. 12 for example).

[0193] The size of the wavelength selecting section may be changed as appropriate in accordance with the light emitted by the light emitting section, or in the case where a light absorbing section (e.g., a black matrix section) is provided between the wavelength selecting sections of adjacent light emitting sections, the size of the light absorbing section may be changed as appropriate in accordance with the light emitted by the light emitting section. Also, the size of the wavelength selecting section may be determined by the distance (offset amount) d between the normal line passing through the center of the light emitting section and the normal line passing through the center of the wavelength selecting section. ０ The planar shape of the wavelength selection section may be the same as, similar to, or different from the planar shape of the lens member.

[0194] Below, with reference to Figures 24A, 24B, 24C, and 25, we will explain the relationship between the normals passing through the centers of the light-emitting unit 51, wavelength selection unit 52, and lens member 53 when they are arranged in this order.

[0195] As shown in FIG. 24A, the normal line LN passing through the center of the light emitting unit 51, the normal line LN″ passing through the center of the wavelength selecting unit 52, and the normal line LN′ passing through the center of the lens member 53 may coincide with each other. That is, D ０ = 0, d ０ = 0. However, D ０ represents the distance (offset amount) between the normal line LN passing through the center of the light-emitting portion 51 and the normal line LN′ passing through the center of the lens member 53, and d ０ represents the distance (offset amount) between the normal line LN passing through the center of the light emitting section 51 and the normal line LN″ passing through the center of the wavelength selecting section 52.

[0196] As shown in FIG. 24B, the normal line LN passing through the center of the light-emitting unit 51 and the normal line LN" passing through the center of the wavelength selecting unit 52 are aligned, but the normal line LN passing through the center of the light-emitting unit 51 and the normal line LN" passing through the center of the wavelength selecting unit 52 may not be aligned with the normal line LN' passing through the center of the lens member 53. That is, D ０ >0, d ０ = 0.

[0197] As shown in FIG. 24C, the normal line LN passing through the center of the light emitting unit 51, the normal line LN" passing through the center of the wavelength selecting unit 52, and the normal line LN' passing through the center of the lens member 53 do not coincide with each other, and the normal line LN" passing through the center of the wavelength selecting unit 52 and the normal line LN' passing through the center of the lens member 53 may coincide with each other. That is, D ０ >0, d ０ >0, D ０ = d ０ may be.

[0198] As shown in FIG. 25, a configuration may be adopted in which the normal line LN passing through the center of the light-emitting unit 51, the normal line LN″ passing through the center of the wavelength selecting unit 52, and the normal line LN′ passing through the center of the lens member 53 do not coincide with each other. That is, D ０ >0, d ０ >0, D ０ ≠d ０ Here, it is preferable that the center of the wavelength selection unit 52 (position indicated by a black square in FIG. 25) is located on a straight line LL connecting the center of the light emitting unit 51 and the center of the lens member 53 (position indicated by a black circle in FIG. 25). Specifically, the distance between the center of the light emitting unit 51 and the center of the wavelength selection unit 52 in the thickness direction (vertical direction in FIG. 25) is LL. １ , the distance in the thickness direction between the center of the wavelength selection unit 52 and the center of the lens member 53 is LL ２ When this is done, D ０ >d ０ >0, and taking into account manufacturing variations, d ０ :D ０ =LL １ : (LL １ +LL ２ Here, the thickness direction refers to the thickness direction of the light emitting section 51, the wavelength selecting section 52, and the lens member 53.

[0199] Below, with reference to Figures 26A, 26B, and 27, we will explain the relationship between the normals passing through the centers of the light-emitting unit 51, lens member 53, and wavelength selection unit 52 when they are arranged in this order.

[0200] As shown in FIG. 26A, a normal line LN passing through the center of the light emitting unit 51, a normal line LN″ passing through the center of the wavelength selecting unit 52, and a normal line LN′ passing through the center of the lens member 53 may be configured to coincide with each other. That is, D ０ >0, d ０ = 0.

[0201] As shown in FIG. 26B, the normal line LN passing through the center of the light emitting unit 51, the normal line LN" passing through the center of the wavelength selecting unit 52, and the normal line LN' passing through the center of the lens member 53 do not coincide with each other, and the normal line LN" passing through the center of the wavelength selecting unit 52 and the normal line LN' passing through the center of the lens member 53 may coincide with each other. That is, D ０ >0, d ０ >0, D ０ = d ０ may be.

[0202] As shown in FIG. 27 , a configuration may be adopted in which the normal line LN passing through the center of the light-emitting section 51, the normal line LN″ passing through the center of the wavelength selecting section 52, and the normal line LN′ passing through the center of the lens member 53 do not all coincide. Here, it is preferable that the center of the lens member 53 (the position indicated by the black circle in FIG. 27 ) is located on a straight line LL connecting the center of the light-emitting section 51 and the center of the wavelength selecting section 52 (the position indicated by the black square in FIG. 27 ). Specifically, the distance between the center of the light-emitting section 51 and the center of the lens member 53 in the thickness direction (the vertical direction in FIG. 27 ) is defined as LL. ２ , the distance in the thickness direction between the center of the lens member 53 and the center of the wavelength selection unit 52 is LL １ When this is the case, d ０ >D ０ >0, and taking into account manufacturing variations, D ０ :d ０ =LL ２ : (LL １ +LL ２ Here, the thickness direction refers to the thickness direction of the light emitting section 51, the wavelength selecting section 52, and the lens member 53.

[0203] 6. Example of Resonator Structure The subpixel 10 included in the display device 101 according to an embodiment may be configured to have a resonator structure that resonates light generated by the light-emitting element 12. The resonator structure will be described below with reference to the drawings. In the following description, the first surface of each layer may be referred to as the upper surface.

[0204] (Resonator Structure: First Example) Fig. 28A is a schematic cross-sectional view illustrating a first example of a resonator structure. In the following description, when the light-emitting elements provided corresponding to the sub-pixels 10R, 10G, and 10B are referred to collectively without any particular distinction, these light-emitting elements may be referred to as light-emitting elements 12. When the light-emitting elements provided corresponding to the sub-pixels 10R, 10G, and 10B are referred to separately, these light-emitting elements may be referred to as light-emitting elements 12. Ｒ , 12 Ｇ , 12 Ｂ The portions of the OLED layer 122 corresponding to the sub-pixels 10R, 10G, and 10B are called the OLED layer 122 Ｒ , OLED layer 122 Ｇ , OLED layer 122 Ｂ This is what happens.

[0205] In the first example, the first electrode 121 is formed to have a common film thickness in each light emitting element 12. The same is true for the second electrode 123.

[0206] A reflector 71 is disposed below the first electrode 121 of the light-emitting element 12, with an optical adjustment layer 72 sandwiched therebetween. A resonator structure that resonates the light generated by the OLED layer 122 is formed between the reflector 71 and the second electrode 123. In the following description, the optical adjustment layers 72 provided corresponding to the sub-pixels 10R, 10G, and 10B are referred to as the optical adjustment layers 72. Ｒ , 72 Ｇ , 72 Ｂ This is what happens.

[0207] The reflector 71 is formed to have a common film thickness for each light-emitting element 12. The film thickness of the optical adjustment layer 72 varies depending on the color to be displayed by the sub-pixel. Ｒ , 72 Ｇ , 72 ＢBy having different film thicknesses, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light corresponding to the color to be displayed.

[0208] In the example shown in FIG. 28A, the light emitting element 12 Ｒ , 12 Ｇ , 12 Ｂ As described above, the film thickness of the optical adjustment layer 72 differs depending on the color to be displayed by the sub-pixel, so the position of the upper surface of the second electrode 123 is aligned with the light emitting element 12. Ｒ , 12 Ｇ , 12 Ｂ It varies depending on the type of

[0209] The reflector 71 can be made of a metal such as aluminum (Al), silver (Ag), or copper (Cu), or an alloy containing any of these as its main component.

[0210] The optical adjustment layer 72 is made of silicon nitride (SiN ｘ ), silicon oxide (SiO ｘ ), silicon oxynitride (SiO ｘ N ｙ The optical adjustment layer 72 may be formed using an inorganic insulating material such as acrylic resin or polyimide resin, or an organic resin material such as acrylic resin or polyimide resin. The optical adjustment layer 72 may be a single layer or a laminated film made of a plurality of these materials. The number of laminated layers may vary depending on the type of light-emitting element 12.

[0211] The first electrode 121 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0212] The second electrode 123 needs to function as a semi-transmissive reflective film. The second electrode 123 can be formed using magnesium (Mg) or silver (Ag), a magnesium-silver alloy (MgAg) containing these as main components, or an alloy containing an alkali metal or an alkaline earth metal.

[0213] (Resonator Structure: Second Example) FIG. 28B is a schematic cross-sectional view for explaining a second example of the resonator structure.

[0214] In the second example, the first electrode 121 and the second electrode 123 are also formed to have the same film thickness in each light emitting element 12 .

[0215] Also in the second example, a reflector 71 is disposed below the first electrode 121 of the light-emitting element 12, with an optical adjustment layer 72 sandwiched therebetween. A resonator structure that resonates the light generated by the OLED layer 122 is formed between the reflector 71 and the second electrode 123. As in the first example, the reflector 71 is formed to have the same film thickness for each light-emitting element 12, and the film thickness of the optical adjustment layer 72 differs depending on the color to be displayed by the sub-pixel.

[0216] In the first example shown in FIG. 28A, the light emitting element 12 Ｒ , 12 Ｇ , 12 Ｂ The upper surfaces of the reflectors 71 are aligned, and the upper surface of the second electrode 123 is positioned so that the light emitting element 12 Ｒ , 12 Ｇ , 12 Ｂ It differed depending on the type of

[0217] In contrast, in the second example shown in FIG. 28B, the upper surface of the second electrode 123 is Ｒ , 12 Ｇ , 12 Ｂ In order to align the upper surfaces of the second electrodes 123, the light emitting elements 12 Ｒ , 12 Ｇ , 12 Ｂ The upper surface of the reflector 71 is Ｒ , 12 Ｇ , 12 Ｂ Therefore, the lower surface of the reflector 71 (in other words, the upper surface of the base layer (insulating layer) 73) has a stepped shape according to the type of the light emitting element 12.

[0218] The materials constituting the reflector 71, the optical adjustment layer 72, the first electrode 121 and the second electrode 123 are the same as those described in the first example, and therefore description thereof will be omitted.

[0219] 29A is a schematic cross-sectional view illustrating a third example of the resonator structure. In the following description, the reflectors 71 provided corresponding to the sub-pixels 10R, 10G, and 10B are referred to as the reflectors 71. Ｒ , 71 Ｇ , 71 Ｂ This is what happens.

[0220] In the third example, the first electrode 121 and the second electrode 123 are also formed to have the same film thickness in each light emitting element 12 .

[0221] Also in the third example, a reflector 71 is disposed below the first electrode 121 of the light-emitting element 12, with an optical adjustment layer 72 sandwiched therebetween. A resonator structure that resonates the light generated by the OLED layer 122 is formed between the reflector 71 and the second electrode 123. As in the first and second examples, the film thickness of the optical adjustment layer 72 varies depending on the color to be displayed by the sub-pixel. As in the second example, the position of the upper surface of the second electrode 123 is located above the first electrode 121 of the light-emitting element 12. Ｒ , 12 Ｇ , 12 Ｂ are arranged to align.

[0222] In the second example shown in FIG. 29B, the lower surface of the reflector 71 has a stepped shape according to the type of light emitting element 12 in order to align the upper surface of the second electrode 123 .

[0223] In contrast, in the third example shown in FIG. 29A, the film thickness of the reflector 71 is Ｒ , 12 Ｇ , 12 Ｂ More specifically, the reflector 71 is set to have a different reflecting surface depending on the type of the reflector 71. Ｒ , 71 Ｇ , 71 Ｂ The film thickness is set so that the bottom surfaces of the

[0224] The materials constituting the reflector 71, the optical adjustment layer 72, the first electrode 121 and the second electrode 123 are the same as those described in the first example, and therefore description thereof will be omitted.

[0225] (Fourth Example of Resonator Structure) Fig. 29B is a schematic cross-sectional view illustrating a fourth example of the resonator structure. In the following description, the first electrodes 121 provided corresponding to the sub-pixels 10R, 10G, and 10B are referred to as first electrodes 121 Ｒ , 121 Ｇ , 121 Ｂ This is what happens.

[0226] 29A , the first electrodes 121 and second electrodes 123 of each light-emitting element 12 are formed to have the same film thickness. A reflector 71 is disposed below the first electrodes 121 of the light-emitting elements 12, with an optical adjustment layer 72 sandwiched therebetween.

[0227] In contrast, in the fourth example shown in FIG. 29B, the optical adjustment layer 72 is omitted, and the film thickness of the first electrode 121 is set to the same as that of the light emitting element 12 Ｒ , 12 Ｇ , 12 Ｂ The settings were different depending on the type of

[0228] The reflector 71 is formed to have a common thickness for each light-emitting element 12. The thickness of the first electrode 121 varies depending on the color to be displayed by the sub-pixel. Ｒ , 121 Ｇ , 121 Ｂ By having different film thicknesses, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light corresponding to the color to be displayed.

[0229] The materials constituting the reflector 71, the optical adjustment layer 72, the first electrode 121 and the second electrode 123 are the same as those described in the first example, and therefore description thereof will be omitted.

[0230] (Resonator Structure: Fifth Example) FIG. 30A is a schematic cross-sectional view for explaining a fifth example of the resonator structure.

[0231] 28A , the first electrode 121 and the second electrode 123 are formed to have the same film thickness in each light-emitting element 12. A reflector 71 is disposed below the first electrode 121 of the light-emitting element 12 with an optical adjustment layer 72 sandwiched therebetween.

[0232] 30A, the optical adjustment layer 72 is omitted, and instead, an oxide film 74 is formed on the surface of the reflector 71. The thickness of the oxide film 74 is Ｒ , 12 Ｇ , 12 Ｂ In the following description, the oxide films 74 provided corresponding to the sub-pixels 10R, 10G, and 10B are referred to as oxide films 74 Ｒ , 74 Ｇ , 74 Ｂ This is what happens.

[0233] The thickness of the oxide film 74 varies depending on the color to be displayed by the sub-pixel. Ｒ , 74 Ｇ , 74 Ｂ By having different film thicknesses, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light corresponding to the color to be displayed.

[0234] The oxide film 74 is a film obtained by oxidizing the surface of the reflector 71, and is made of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 74 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 71 and the second electrode 123.

[0235] Light-emitting element 12 Ｒ , 12 Ｇ , 12 Ｂ The oxide film 74, which has a different thickness depending on the type of material, can be formed, for example, as follows.

[0236] First, a container is filled with an electrolyte, and the substrate on which the reflector 71 is formed is immersed in the electrolyte. An electrode is disposed so as to face the reflector 71.

[0237] Then, a positive voltage is applied to the reflector 71 with the electrode as a reference, and the reflector 71 is anodized. The thickness of the oxide film formed by anodization is proportional to the voltage value applied to the electrode. Ｒ , 71 Ｇ , 71 ＢAnodic oxidation is performed while a voltage according to the type of light emitting element 12 is applied to each of the layers 71 and 72. This allows oxide films 74 with different thicknesses to be formed all at once.

[0238] The materials constituting the reflector 71, the first electrode 121 and the second electrode 123 are the same as those described in the first example, and therefore will not be described again.

[0239] (Resonator Structure: Sixth Example) FIG. 30B is a schematic cross-sectional view for explaining a sixth example of the resonator structure.

[0240] In the sixth example, the light emitting element 12 is configured by laminating a first electrode 121, an OLED layer 122, and a second electrode 123. However, in the sixth example, the first electrode 121 is formed so as to function both as an electrode and a reflector. The first electrode (also serving as a reflector) 121 is formed so as to function as a light emitting element 12. Ｒ , 12 Ｇ , 12 Ｂ The first electrode (also serving as a reflector) 121 is formed of a material having an optical constant selected according to the type of color to be displayed. By varying the phase shift due to the first electrode (also serving as a reflector) 121, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light according to the color to be displayed.

[0241] The first electrode (also serving as a reflector) 121 can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing these as a main component. Ｒ First electrode (also serving as a reflector) 121 Ｒ is formed of copper (Cu), and the light emitting element 12 Ｇ First electrode (also serving as a reflector) 121 Ｇ and light-emitting element 12 Ｂ First electrode (also serving as a reflector) 121 Ｂ The insulating film 11 may be made of aluminum.

[0242] The material constituting the second electrode 123 is the same as that described in the first example, and therefore a description thereof will be omitted.

[0243] (Resonator Structure: Seventh Example) FIG. 31 is a schematic cross-sectional view for explaining a seventh example of the resonator structure.

[0244] The seventh example is basically the same as the light emitting element 12 Ｒ , 12 Ｇ The sixth example is applied to the light emitting element 12 Ｂ In this configuration, the optical distance that generates the optimum resonance for the wavelength of light corresponding to the color to be displayed can also be set.

[0245] Light-emitting element 12 Ｒ , 12 Ｇ First electrode (also serving as a reflector) 121 used in Ｒ , 121 Ｇ The electrode can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing any of these as a main component.

[0246] Light-emitting element 12 Ｂ Reflector 71 used in Ｂ , optical adjustment layer 72 Ｂ and the first electrode 121 Ｂ The materials constituting the second embodiment are the same as those described in the first embodiment, and therefore will not be described here.

[0247] <7 Application Examples> (Electronic Devices) The display device 101 and the like according to an embodiment may be provided in various electronic devices. The display device 101 and the like according to an embodiment are particularly suitable for eyewear devices such as head-mounted displays that require high resolution and are used in a magnified manner near the eyes. Below, a head-mounted display 320 and a see-through head-mounted display 340 equipped with the display device 101 according to an embodiment will be described as specific examples of electronic devices.

[0248] 32 shows an example of the appearance of a head-mounted display 320. The head-mounted display 320 is an example of an eyewear device. The head-mounted display 320 has, for example, a glasses-shaped main body 321 and ear hooks 322 on both sides of the main body 321 for wearing the head of a user.

[0249] 33 is a schematic configuration diagram of the main body 321. The main body 321 includes the display device 101 according to an embodiment, light-emitting elements 331, 331, a Fresnel lens 332, a hot mirror 333, and an imaging element 334.

[0250] The light-emitting elements 331, 331 are near-infrared LEDs (IR LEDs) capable of emitting near-infrared light L. The near-infrared light L emitted from the light-emitting elements 331, 331 is reflected by the cornea or the like of the wearer of the head-mounted display 320, and then enters the hot mirror 333 via the Fresnel lens 332.

[0251] The hot mirror 333 transmits visible light but reflects near-infrared light. Specifically, the hot mirror 333 transmits image light (visible light) emitted from the display device 101 but reflects near-infrared light L reflected by the cornea or the like of the wearer.

[0252] The image sensor 334 is an image sensor for eye tracking, and can capture near-infrared light L reflected by the cornea or the like of the wearer.

[0253] As described above, in the display device 101 according to one embodiment, reflection of near-infrared light by the contact electrodes 14 of the display device 101 is suppressed. Therefore, it is possible to suppress erroneous detection of the gaze caused by reflection of near-infrared light by the contact electrodes 14 of the display device 101. Therefore, it is possible to suppress a decrease in the accuracy of gaze detection.

[0254] 34 shows an example of the appearance of a see-through head mounted display 340. The see-through head mounted display 340 is an example of an eyewear device. The see-through head mounted display 340 includes a main body 341, an arm 342, and a lens barrel 343.

[0255] The main body 341 is connected to the arm 342 and the glasses 350. Specifically, an end of the long side of the main body 341 is coupled to the arm 342, and one side of the main body 341 is connected to the glasses 350 via a connecting member. The main body 341 may also be worn directly on the head of a human body.

[0256] The main body 341 incorporates a control board for controlling the operation of the see-through head mounted display 340 and a display unit. The arm 342 connects the main body 341 to the lens barrel 343 and supports the lens barrel 343. Specifically, the arm 342 is coupled to an end of the main body 341 and an end of the lens barrel 343, respectively, and fixes the lens barrel 343. The arm 342 also incorporates a signal line for communicating data related to images provided from the main body 341 to the lens barrel 343.

[0257] The lens barrel 343 projects image light provided from the main body 341 via the arm 342, through the eyepiece 351, toward the eyes of the user wearing the see-through head mounted display 340. In this see-through head mounted display 340, the display unit of the main body 341 includes the display device 101 according to one embodiment.

[0258] 10R, 10G, 10B Subpixel 11 Drive substrate 111 Substrate 112 Insulating layer 113a, 113b Wiring 114a, 114b Contact plug 12W Light-emitting element 121 First electrode 122 OLED layer 123 Second electrode 13 Insulating layer 13a Opening 14 Contact electrode 141 Reflective portion 142 Transmissive portion 15 Protective layer 16 ALD layer 17 Planarization layer 18 Color filter 18BK Light-shielding layer 18FR, 18FG, 18FB Colored layer 19 Planarization layer 20 Sealing portion 201 Side sealing portion 202 Extension portion 21 Filled resin layer 22 Cover glass 23 Polarizer 24 Pad portion 25 Black filter 26 Lens array 261 Lens 101 Display device 320 Head-mounted display 340 See-through head-mounted display RE1 Display area RE2 Peripheral area

Claims

1. A display device comprising: an electrode provided around a display area; and a black seal portion covering the electrode so that a portion of the electrode protrudes in a planar view, wherein the electrode has a transmissive portion that can transmit near-infrared light in the portion that protrudes from the seal portion in the planar view.

2. The display device according to claim 1, wherein the transmissive portion includes a transparent conductive layer.

3. The display device according to claim 2, wherein the electrode has a reflective portion capable of reflecting the near-infrared light in a portion covered by the sealing portion in the planar view, and the reflective portion includes a metal layer and the transparent conductive layer provided on the metal layer.

4. The display device according to claim 3, wherein the electrode has the reflective portion together with the transmissive portion in a portion that protrudes from the sealing portion in the plan view.

5. The display device according to claim 1, further comprising a member capable of absorbing the near-infrared light, provided below the transmissive portion.

6. The display device according to claim 1, comprising a plurality of pixels provided in the display region, the plurality of pixels sharing a pixel electrode, the pixel electrode extending from the display region to a periphery of the display region and connected to the electrode.

7. The display device according to claim 1, wherein the electrode has a loop shape surrounding the display area in the plan view, and the portion protruding from the sealing portion in the plan view includes an inner peripheral portion of the electrode in the plan view.

8. A display device comprising: an electrode provided around a display area; and a black seal portion covering the electrode so that a portion of the electrode protrudes in a plan view, wherein the electrode includes a multilayer film on the seal portion side that can suppress reflection of near-infrared light of a specific wavelength by utilizing multilayer film interference.

9. The display device according to claim 8, wherein the electrode further includes a metal layer, and the multilayer film includes a first conductive layer having light-transmitting properties and a second conductive layer having light-transmitting properties, in that order, on the metal layer.

10. The display device according to claim 9, wherein the second conductive layer is provided on a portion of one surface of the first conductive layer and extends beyond the sealing portion in the plan view.

11. The display device according to claim 9, wherein the first conductive layer includes indium tin oxide, and the second conductive layer includes titanium nitride.

12. A display device comprising: an electrode provided around a display area; a black seal portion covering the electrode so that a portion of the electrode extends beyond the seal portion in a planar view; and a reflection suppressing layer that suppresses reflection of near-infrared light of a specific wavelength that is incident on the portion that extends beyond the seal portion in the planar view.

13. The display device according to claim 12, wherein the anti-reflection layer is a multilayer film capable of suppressing reflection of near-infrared light of the specific wavelength by utilizing multilayer film interference.

14. The display device according to claim 13, wherein the multilayer film includes a first protective layer and a second protective layer having different refractive indices.

15. The display device according to claim 14, wherein the first protective layer includes silicon oxide, and the second protective layer includes silicon nitride.

16. An electronic device comprising the display device according to claim 1.

Images