Light detection device and electronic apparatus

Abstract

The present invention shortens wiring lengths of a pixel group in an upper layer. This light detection device has a first pixel unit and a second pixel unit. The first pixel unit is provided with at least one first pixel having a photoelectric conversion unit formed on a semiconductor substrate. The second pixel unit is configured by arranging, in a matrix shape, a plurality of second pixels respectively having photoelectric conversion units from each of which an electric charge is transferred to a common pixel circuit, and is stacked on the first pixel unit, while being disposed so as to be shifted by an amount corresponding to the at least one first pixel thereof.

Description

Photodetector and electronic equipment

[0001] The present disclosure relates to photodetection devices and electronic devices.

[0002] In photodetection devices such as imaging devices, a photodetection device is used in which a pixel circuit such as a pixel signal generation circuit is shared by a pixel group consisting of a plurality of pixels. Also, a photodetection device (photoelectric conversion element) with a reduced area has been proposed by stacking the pixel groups (see, for example, Patent Document 1).

[0003] This photoelectric conversion element is constructed by stacking pixel groups each having an organic photoelectric conversion film on top of a pixel group formed on a semiconductor substrate. Pixel circuits commonly connecting the pixel groups are disposed on the semiconductor substrate. A through electrode that penetrates the semiconductor substrate is used to transmit signals based on the charges generated by the pixel groups on the upper layer to the pixel circuits formed on the semiconductor substrate.

[0004] International Publication No. 2020 / 255999

[0005] However, in the above-mentioned conventional technology, since the pixel group in the upper layer is stacked on the pixel group in the lower layer (semiconductor substrate), the through electrodes are arranged at the edge of the pixel group in the lower layer. This is because the through electrodes are arranged in positions that avoid the pixel group in the lower layer. As a result, wiring is required to connect the through electrodes to the common electrode commonly connected to the pixel group in the upper layer, which results in a problem of long wiring length. This causes problems such as an increase in stray capacitance.

[0006] Therefore, the present disclosure proposes a photodetector device and electronic device that shorten the wiring length of the upper layer pixel group.

[0007] The photodetection device according to the present disclosure includes a first pixel unit including at least one first pixel having a photoelectric conversion portion formed on a semiconductor substrate, and a second pixel unit configured by arranging a plurality of second pixels in a matrix shape, each having a photoelectric conversion portion whose respective charges are transferred to a common pixel circuit, stacked on the first pixel unit and shifted by at least one of the first pixels.

[0008] FIG. 1 is a diagram illustrating an example of a schematic configuration of a photodetection device according to an embodiment of the present disclosure. FIG. 2 is a diagram illustrating an example of a configuration of a pixel group according to the first embodiment of the present disclosure. FIG. 3 is a diagram illustrating an example of a configuration of a pixel group according to the first embodiment of the present disclosure. FIG. 4 is a diagram illustrating an example of generation of a pixel signal according to the first embodiment of the present disclosure. FIG. 5 is a diagram illustrating an example of an arrangement of a pixel group according to the first embodiment of the present disclosure. FIG. 6 is a diagram illustrating an example of a configuration of a pixel group according to the first embodiment of the present disclosure. FIG. 7 is a diagram illustrating an effect of a photodetection device according to the first embodiment of the present disclosure. FIG. 8 is a diagram illustrating an effect of a photodetection device according to the first embodiment of the present disclosure. FIG. 9 is a diagram illustrating an example of a configuration of a pixel group according to the second embodiment of the present disclosure. FIG. 10 is a diagram illustrating an example of a configuration of a pixel group according to the second embodiment of the present disclosure. FIG. 11 is a diagram illustrating an example of a configuration of a pixel group according to the third embodiment of the present disclosure. FIG. 12 is a diagram illustrating an example of a configuration of a pixel group according to the third embodiment of the present disclosure. FIG. 13 is a diagram illustrating an example of a configuration of a pixel group according to the third embodiment of the present disclosure. FIG. 14 is a diagram illustrating an example of an arrangement of a pixel group according to the third embodiment of the present disclosure. FIG. 15 is a diagram illustrating an example of a configuration of a pixel group according to the third embodiment of the present disclosure. FIG. 10 is a diagram illustrating an example of the configuration of a pixel group according to a fifth embodiment of the present disclosure. FIG. 11 is a diagram illustrating an example of the arrangement of a pixel group according to a fifth embodiment of the present disclosure. FIG. 12 is a diagram illustrating an example of the configuration of a pixel group according to a sixth embodiment of the present disclosure. FIG. 13 is a diagram illustrating another example of the configuration of a pixel group according to a sixth embodiment of the present disclosure. FIG. 14 is a diagram illustrating another example of the configuration of a pixel group according to a sixth embodiment of the present disclosure. FIG. 15 is a diagram illustrating another example of the configuration of a pixel group according to a sixth embodiment of the present disclosure. FIG. 16 is a diagram illustrating another example of the configuration of a pixel group according to a sixth embodiment of the present disclosure.FIG. 36 is a diagram showing another example configuration of a pixel group according to the sixth embodiment of the present disclosure. FIG. 37 is a diagram showing another example configuration of a pixel group of a comparative example. FIG. 38 is a diagram showing another example configuration of a pixel group according to the sixth embodiment of the present disclosure. FIG. 39 is a block diagram showing an example configuration of an imaging device mounted on an electronic device. FIG. 39 is a diagram schematically showing an example of the overall configuration of a light detection system including a light detection device. FIG. 39 is a diagram showing an example circuit configuration of a light detection system. FIG. 39 is a block diagram showing an example schematic configuration of a vehicle control system, which is an example of a mobile body control system to which the technology according to the present disclosure can be applied. FIG. 39 is a diagram showing an example installation position of an imaging unit. FIG. 39 is a diagram showing an example schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied. FIG. 39 is a block diagram showing an example functional configuration of a camera head and a CCU shown in FIG.

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be given in the following order. Note that in the following embodiments, the same components will be assigned the same reference numerals to avoid redundant description. 1. First embodiment 2. Second embodiment 3. Third embodiment 4. Fourth embodiment 5. Fifth embodiment 6. Sixth embodiment 7. Configuration of electronic device 8. Application example 9. Application example to a moving body 10. Application example to an endoscopic surgery system

[0010] (1. First Embodiment) <Configuration of Photodetector> FIG. 1 is a diagram illustrating an example of a schematic configuration of a photodetector according to an embodiment of the present disclosure. As shown in FIG. 1 , the photodetector 1 of this example includes a pixel array section (so-called imaging region) 13 in which pixels 12, each including a plurality of photoelectric conversion units, are regularly arranged two-dimensionally on a semiconductor substrate 11, e.g., a silicon substrate, and a peripheral circuit section. Each pixel 12 includes, for example, a photodiode serving as a photoelectric conversion unit, and a plurality of pixel transistors (so-called MOS transistors). The plurality of pixel transistors may be configured with, for example, three transistors: a transfer transistor, a reset transistor, and an amplification transistor. Alternatively, a selection transistor may be added to configure the pixel 12 with four transistors. The pixel 12 may also have a shared pixel structure. This pixel-sharing structure includes a plurality of photodiodes, a plurality of transfer transistors, a shared floating diffusion region, and each of the other pixel transistors.

[0011] The peripheral circuit section includes a vertical drive circuit 33, a column signal processing circuit 34, a horizontal drive circuit 35, an output circuit 37, a control circuit 36, and the like.

[0012] The control circuit 36 ​​receives an input clock and data instructing the operation mode, etc., and outputs data such as internal information of the image sensor. That is, the control circuit 36 ​​generates clock signals and control signals that serve as references for the operations of the vertical drive circuit 33, column signal processing circuit 34, horizontal drive circuit 35, etc., based on a vertical synchronization signal, a horizontal synchronization signal, and a master clock. These signals are then input to the vertical drive circuit 33, column signal processing circuit 34, horizontal drive circuit 35, etc.

[0013] The vertical drive circuit 33 is configured by, for example, a shift register, selects the pixel drive lines 23, supplies pulses for driving the pixels to the selected pixel drive lines, and drives the pixels row by row. That is, the vertical drive circuit 33 selects and scans each pixel 12 of the pixel array unit 13 row by row in the vertical direction, and supplies pixel signals based on signal charges generated in accordance with the amount of light received in, for example, a photodiode serving as a photoelectric conversion unit of each pixel 12 to the column signal processing circuit 34 via the vertical signal lines 24.

[0014] The column signal processing circuits 34 are arranged, for example, for each column of pixels 12, and perform signal processing such as noise removal for each pixel column on signals output from one row of pixels 12. That is, the column signal processing circuits 34 perform signal processing such as CDS (Correlated Double Sampling) for removing fixed pattern noise specific to the pixels 12, signal amplification, AD conversion, etc. A horizontal selection switch (not shown) is provided at the output stage of the column signal processing circuit 34 and connected between the output stage and the horizontal signal line 38.

[0015] The horizontal drive circuit 35 is configured, for example, by a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 34 in turn, causing each of the column signal processing circuits 34 to output a pixel signal to a horizontal signal line 38.

[0016] The output circuit 37 processes and outputs signals sequentially supplied from each of the column signal processing circuits 34 via the horizontal signal line 38. For example, the output circuit 37 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, etc. The input / output terminal 39 exchanges signals with the outside. The column signal processing circuit 34 is an example of a "processing circuit" in the present disclosure.

[0017] 1 has pixels 12 arranged in a matrix in the pixel array section 13, but in the photodetector device of the present disclosure, a pixel circuit is shared among a plurality of pixels. Furthermore, pixel groups each configured by stacking pixels sharing such a pixel circuit are arranged in the pixel array section 13. The configuration of this pixel group will be described using FIG. 2 .

[0018] <Pixel Group> FIG. 2 is a diagram showing an example configuration of a pixel group according to the first embodiment of the present disclosure. The diagram shows an example configuration of a pixel group 40. The pixel group 40 includes a pixel unit 100 and a pixel unit 150. The pixel unit 100 includes at least one pixel having a photoelectric conversion unit formed on a semiconductor substrate. The pixel unit 100 in the diagram includes a pixel 110. This pixel 110 is, for example, a pixel that generates a signal for measuring the distance to an object. Furthermore, when the pixel 110 generates a signal for measuring the distance, for example, the pixel 110 is connected to a pixel circuit 120a and a pixel circuit 120b.

[0019] The pixel unit 150 is configured by arranging a plurality of pixels in a matrix, each having a photoelectric conversion unit whose electric charge is transferred to a common pixel circuit, and is stacked on the pixel unit 100. The pixel unit 150 in FIG. 2 includes a plurality of pixels 160 (pixel 160a, pixel 160b, pixel 160c, and pixel 160d). This pixel unit 150 is stacked on the upper layer of the pixel unit 100. Note that the pixel unit 150 is arranged with a shift by at least one pixel 160 with respect to the pixel unit 100. The pixels 160a, 160b, 160c, and 160d are connected to the pixel circuit 120c.

[0020] The pixel 110 is an example of a "first pixel" in the present disclosure. The pixel unit 100 is an example of a "first pixel unit" in the present disclosure. The pixels 160a, 160b, 160c, and 160d are examples of a "second pixel" in the present disclosure. The pixel unit 150 is an example of a "second pixel unit" in the present disclosure.

[0021] 3 and 4 are diagrams showing an example configuration of a pixel group according to the first embodiment of the present disclosure. Figures 3 and 4 are circuit diagrams showing an example configuration of a pixel group 40. Figure 3 shows a circuit diagram of a pixel unit 100 and pixel circuits 120a and 120b in the pixel group 40.

[0022] The pixel unit 100 includes a pixel 110 and MOS transistors 112 and 113. The pixel 110 includes a photoelectric conversion unit 111. The MOS transistor 112 transfers charges from the photoelectric conversion unit 111 to a charge detection unit 121 of the pixel circuit 120a. The MOS transistor 113 transfers charges from the photoelectric conversion unit 111 to the charge detection unit 121 of the pixel circuit 120b. A signal line TGA and a signal line TGB are connected to the gates of the MOS transistors 112 and 113, respectively. A photodiode can be used for the photoelectric conversion unit 111. N-channel MOS transistors can be used for the MOS transistors 112 and 113.

[0023] The pixel circuit 120a generates a pixel signal based on the transferred charges. The pixel circuit 120a includes a charge detection unit 121 and MOS transistors 122 to 124. The charge detection unit 121 detects the charges generated by the photoelectric conversion unit 111. The charge detection unit 121 also holds the detected charges. The MOS transistor 122 resets the charge detection unit 121. This MOS transistor 122 is reset by applying a power supply voltage to the charge detection unit 121. The drain of the MOS transistor 123 is connected to a power supply line Vdd, and the gate is connected to the charge detection unit 121. The MOS transistor 123 generates a signal corresponding to the charges held in the charge detection unit 121. The MOS transistor 124 is connected to the source of the MOS transistor 123 and outputs the signal generated by the MOS transistor 123. The gates of the MOS transistors 122 and 124 are connected to a signal line RST1 and a signal line SEL1, respectively. The configuration of the pixel circuit 120b is the same as that of the pixel circuit 120a, and therefore a description thereof will be omitted.

[0024] 4 shows a circuit diagram of the pixel unit 150 and pixel circuit 120c of the pixel group 40. The pixel unit 150 includes a plurality of pixels 160 (pixel 160a, pixel 160b, pixel 160c, and pixel 160d). A power supply line Vou that supplies a bias voltage is wired to the pixel unit 150.

[0025] 4 includes photoelectric conversion units 161 (photoelectric conversion units 161a, 161b, 161c, and 161d) each including a photoelectric conversion film 354 made of an organic material. This photoelectric conversion film 354 is commonly disposed for each photoelectric conversion unit of the pixel 160. An upper electrode 355 is disposed on the upper layer of this photoelectric conversion film 354, and a transparent semiconductor layer 353 is disposed on the lower layer.

[0026] A readout electrode 351 is connected to the transparent semiconductor layer 353. The readout electrode 351 is an electrode from which charges generated by the photoelectric conversion unit 161 are output and from which the charges are read out. Storage electrodes 356a, 356b, 356c, and 356d are disposed opposite the transparent semiconductor layer 353 with the insulating film 352 sandwiched therebetween. The storage electrodes 356a, 356b, 356c, and 356d are electrodes to which a voltage is applied to store the charges generated by the photoelectric conversion units 161a, 161b, 161c, and 161d in the transparent semiconductor layer 353. The storage electrode 356a corresponds to the photoelectric conversion unit 161a, the storage electrode 356b corresponds to the photoelectric conversion unit 161b, the storage electrode 356c corresponds to the photoelectric conversion unit 161c, and the storage electrode 356d corresponds to the photoelectric conversion unit 161d. In this case, the photoelectric conversion film 354 near the storage electrode 356 corresponds to the photoelectric conversion unit 161. Details of the configuration of the photoelectric conversion unit 161a etc. will be described later. Note that an insulating film 352 is disposed between the transparent semiconductor layer 353 and the readout electrode 351 and storage electrode 356a etc.

[0027] In pixel circuit 120c, a charge detection unit 125 is arranged instead of charge detection unit 121 of pixel circuit 120a. This charge detection unit 125 detects the charge of pixel 160. The circuit configuration of pixel circuit 120c other than that described above is the same as that of pixel circuit 120a, and therefore description thereof will be omitted.

[0028] The upper electrode 355 is connected to a power supply line Vou. The readout electrode 351 is connected to a pixel circuit 120c. The storage electrodes 356a, 356b, 356c, and 356d are connected to signal lines VOA, VOB, VOC, and VOD, respectively.

[0029] The photoelectric conversion units 161a, 161b, 161c, and 161d perform photoelectric conversion of incident light. The photoelectric conversion units 161a, 161b, 161c, and 161d are photoelectric conversion elements configured by sandwiching a photoelectric conversion film 354, which is stacked on a semiconductor substrate, between transparent electrodes or the like.

[0030] A voltage is applied to the storage electrodes 356a, 356b, 356c, and 356d to store the charges generated by the photoelectric conversion units 161a, 161b, 161c, and 161d during exposure in the nearby transparent semiconductor layer 353. A voltage is also applied to the storage electrodes 356a, 356b, 356c, and 356d to output the charges stored in the nearby transparent semiconductor layer 353 via the readout electrode 351 during readout.

[0031] As described above, the upper electrode 355 is connected to the power supply line Vou. By applying a control signal of a voltage (hereinafter referred to as the storage voltage) higher than the bias voltage of the power supply line Vou to the storage electrodes 356a, etc. during the exposure period, electrons, for example, among the charges generated by the photoelectric conversion film 354, are transferred to and stored in the transparent semiconductor layer 353. By applying a control signal of a voltage (hereinafter referred to as the readout voltage) lower than the voltage during the exposure period to the storage electrodes 356a, etc. after the exposure period has elapsed, the charges accumulated in the transparent semiconductor layer 353 are transferred to the readout electrode 351 and transmitted to the charge detection unit 125 of the pixel circuit 120c. When transferring the charges of the photoelectric conversion unit 161a to the charge detection unit 125, a readout voltage (control signal) is applied to the storage electrode 356a via the signal line VOA.

[0032] 5 is a timing diagram illustrating an example of pixel signal generation in the pixel unit 100 and the pixel unit 150 according to the first embodiment of the present disclosure.

[0033] The upper part of Fig. 5 shows the generation of a pixel signal in the pixel unit 100. In the upper part of Fig. 5, the H level part shows the application of a signal (hereinafter referred to as an ON signal) that turns on the target MOS transistor.

[0034] At T1, an ON signal is applied to the signal lines RST1 and RST2, causing the MOS transistors 122 of the pixel circuits 120a and 120b to conduct. This resets the charge detection units 121 of the pixel circuits 120a and 120b. Also, an ON signal is applied to the signal lines TGA and TGB. This causes the MOS transistors 112 and 113 to conduct, resetting the photoelectric conversion unit 111.

[0035] At T2, the application of the ON signals to the signal lines RST1 and RST2 and the signal lines TGA and TGB is stopped, thereby starting exposure.

[0036] During the period from T3 to T4, an ON signal is alternately applied to the signal line TGA and the signal line TGB. This alternately turns on the MOS transistor 112 and the MOS transistor 113. As a result, the charge generated by the photoelectric conversion unit 111 of the pixel 110 is distributed to the charge detection unit 121 of the pixel circuit 120a and the charge detection unit 121 of the pixel circuit 120b.

[0037] At T5, an ON signal is applied to the signal lines SEL1 and SEL2, and pixel signals are output from the pixel circuits 120a and 120b. At T6, the application of the ON signal to the signal lines SEL1 and SEL2 is stopped.

[0038] Distance measurement by indirect time of flight (iToF) can be performed using a light source that irradiates light onto an object in synchronization with the timing of the pixel signals in FIG. 5 and pixel signals output from pixel circuits 120a and 120b.

[0039] The lower part of Figure 5 shows the generation of pixel signals in the pixel unit 150. During the accumulation period, an accumulation voltage is applied to the signal line VOA-signal line VOD. The arrows in the figure represent the accumulation period of pixel 160a. Furthermore, during most of the accumulation period except before and after readout, an L-level signal is applied to the signal line SEL and signal line RST. Furthermore, an accumulation voltage is applied to the signal lines VOA-VOD.

[0040] At T11, an ON signal is applied to the signal line SEL to read out the pixel 160a.

[0041] At T12, an ON signal is applied to the signal line RST, which resets the charge detection unit 125 of the pixel circuit 120c.

[0042] At T13, the application of the ON signal to the signal line RST is stopped, and then the pixel circuit 120c outputs a reset level value based on the pixel 160a.

[0043] At T14, a readout voltage is applied to the signal line VOA, which ends the accumulation period of the pixel 160a, and the charge in the photoelectric conversion unit 161a of the pixel 160a is transferred to the charge detection unit 125 of the pixel circuit 120c.

[0044] At T15, the application of the readout voltage to the signal line VOA is stopped. This causes the pixel circuit 120c to output a signal level value based on the pixel 160a. Also, the accumulation period of the pixel 160a begins.

[0045] At T16, the application of the ON signal to the signal line SEL is stopped.

[0046] At T17, an ON signal is applied to the signal line SEL to read out pixel 160b.

[0047] At T18, an ON signal is applied to the signal line RST, which resets the charge detection unit 125 of the pixel circuit 120c.

[0048] At T19, the application of the ON signal to the signal line RST is stopped, and then the pixel circuit 120c outputs the reset level value based on the pixel 160b.

[0049] At T20, a readout voltage is applied to the signal line VOB, which ends the accumulation period of the pixel 160b, and the charge in the photoelectric conversion unit 161b of the pixel 160b is transferred to the charge detection unit 125 of the pixel circuit 120c.

[0050] At T21, the application of the read voltage to the signal line VOB is stopped. This causes the pixel circuit 120c to output a signal level value based on the pixel 160b. Also, the accumulation period of the pixel 160b begins.

[0051] At T22, the application of the ON signal to the signal line SEL is stopped.

[0052] At T23, an ON signal is applied to the signal line SEL to read out pixel 160c.

[0053] At T24, an ON signal is applied to the signal line RST, which resets the charge detection unit 125 of the pixel circuit 120c.

[0054] At T25, the application of the ON signal to the signal line RST is stopped, and then the pixel circuit 120c outputs a reset level value based on the pixel 160c.

[0055] At T26, a readout voltage is applied to the signal line VOC, which ends the accumulation period of the pixel 160c, and the charge in the photoelectric conversion unit 161c of the pixel 160c is transferred to the charge detection unit 125 of the pixel circuit 120c.

[0056] At T27, the application of the readout voltage to the signal line VOC is stopped. This causes the pixel circuit 120c to output a signal level value based on the pixel 160c. Also, the accumulation period of the pixel 160c begins.

[0057] At T28, the application of the ON signal to the signal line SEL is stopped.

[0058] At T29, an ON signal is applied to the signal line SEL to read out pixel 160d.

[0059] At T30, an ON signal is applied to the signal line RST, which resets the charge detection unit 125 of the pixel circuit 120c.

[0060] At T31, the application of the ON signal to the signal line RST is stopped. After that, the pixel circuit 120c outputs a reset level value based on the pixel 160d.

[0061] At T32, a readout voltage is applied to the signal line VOD, which ends the accumulation period of the pixel 160d, and the charge in the photoelectric conversion unit 161d of the pixel 160d is transferred to the charge detection unit 125 of the pixel circuit 120c.

[0062] At T33, the application of the read voltage to the signal line VOD is stopped. This causes the pixel circuit 120c to output a signal level value based on the pixel 160d. Also, the accumulation period of the pixel 160d begins.

[0063] At T34, the application of the ON signal to the signal line SEL is stopped.

[0064] The pixel signal generated by the pixel unit 150 is obtained from the reset level value and the signal level value. Specifically, the pixel signal can be generated by subtracting the reset level value from the signal level value. This pixel signal corresponds to an image signal corresponding to incident light from a subject.

[0065] <Layout of pixel groups> Fig. 6 is a diagram showing an example of the layout of pixel groups according to the first embodiment of the present disclosure. The figure is a plan view showing an example of the layout of pixel groups 40 in the pixel array section 13. As described above, the pixel group 40 is configured by stacking pixel units 100 and pixel units 150. A rectangle with dotted hatching in the figure represents a pixel 110 of the pixel unit 100. A photoelectric conversion unit 111 is arranged in the region of this pixel 110.

[0066] The white rectangles in FIG. 6 represent pixels 160a, 160b, 160c, and 160d of the pixel unit 150. The letters attached to the pixels 160a, etc. indicate the wavelengths of incident light corresponding to the respective pixels 160a, etc. "R" represents red light, "G" represents green light, and "B" represents blue light. The pixel unit 150 in FIG. 6 illustrates an example in which the pixels 160a, 160b, 160c, and 160d are arranged in two rows and two columns. A readout electrode 351, which serves as a common electrode, is disposed at the center of the pixels 160a, 160b, 160c, and 160d. The dashed rectangles represent the area of ​​the pixel unit 150.

[0067] 6, the pixel unit 150 is arranged with a shift by the amount of the pixel 160 in the upward direction of FIG. 6 with respect to the pixel unit 100. As a result, the readout electrode 351, which is a common electrode, is arranged at the boundary of the pixel unit 100. Furthermore, the readout electrode 351, which is a common electrode, is arranged across the boundary of the pixel unit 100. As will be described later, a columnar through electrode (through electrode 341) is arranged below the readout electrode 351.

[0068] 7 is a diagram showing an example configuration of a pixel group according to the first embodiment of the present disclosure. The diagram is a schematic cross-sectional view showing an example configuration of a pixel group 40. The pixel group 40 includes a semiconductor substrate 300, a through electrode 341, a wiring region 330, an insulating film 345, a readout electrode 351, storage electrodes 356a-356d, an insulating film 352, a transparent semiconductor layer 353, a photoelectric conversion film 354, and an upper electrode 355. The pixel 12 further includes a sealing film 391, color filters 392 and 394, and an on-chip lens 393.

[0069] The semiconductor substrate 300 is a semiconductor substrate on which elements such as the photoelectric conversion unit 111 are arranged. The semiconductor substrate 300 in Fig. 5 shows the photoelectric conversion unit 111 and MOS transistors 112 and 113 included in the pixel unit 100, and the charge detection unit 121 included in the pixel circuit 120. Note that pixel circuits 120a-120c are further arranged on the semiconductor substrate 300.

[0070] The semiconductor substrate 300 can be made of, for example, silicon (Si). The photoelectric conversion unit 111 and the like are disposed in a well region formed in the semiconductor substrate 300. For convenience, it is assumed that the semiconductor substrate 300 in FIG. 5 constitutes a p-type well region. An element can be formed by disposing an n-type or p-type semiconductor region in this p-type well region.

[0071] 7 represents an n-type semiconductor region. The photoelectric conversion unit 111 is composed of a semiconductor region 301. Specifically, the photoelectric conversion unit 111 corresponds to a photodiode composed of a pn junction formed at the interface between the n-type semiconductor region 301 and a surrounding p-type well region.

[0072] The charge detection unit 121 is made up of an n-type semiconductor region 302. This semiconductor region 302 forms a floating diffusion region.

[0073] The MOS transistor 112 is composed of semiconductor regions 301 and 302 and a gate electrode 321. The semiconductor regions 301 and 302 correspond to the source region and drain region of the MOS transistor, respectively. The gate electrode 321 is disposed on the surface side of the semiconductor substrate 300 and is configured in a columnar shape with a depth that reaches the semiconductor region 301. A gate insulating film (not shown) is disposed between the gate electrode 321 and the semiconductor substrate 300. When a drive voltage is applied to the gate electrode 321, a channel is formed in the well region adjacent to the gate electrode 321, and the semiconductor regions 301 and 302 are brought into a conductive state. In other words, the photoelectric conversion unit 111 and the charge detection unit 121 are conductive, and the charge in the photoelectric conversion unit 111 is transferred to the charge detection unit 121. The MOS transistor 113 is also a MOS transistor with a similar configuration.

[0074] An insulating film 320 is disposed on the front surface side of the semiconductor substrate 300. This insulating film 320 is a film that insulates the front surface side of the semiconductor substrate 300. The insulating film 320 is made of silicon oxide (SiO ２ ) or silicon nitride (SiN).

[0075] The through electrode 341 is an electrode that penetrates the semiconductor substrate 300. This through electrode 341 connects elements arranged on the back side of the semiconductor substrate 300 with elements arranged on the front side. The through electrode 341 in Fig. 5 transmits signals from the pixel 160 to a circuit arranged on the semiconductor substrate 300. The through electrode 341 can be made of, for example, tungsten (W).

[0076] The wiring region 330 is disposed on the front surface side of the semiconductor substrate 300, and is a region where wiring and the like of elements are disposed. The wiring region 330 includes an insulating layer 331 and wiring 332. The insulating layer 331 insulates the wiring 332 and the like. The insulating layer 331 is made of, for example, SiO ２ The wiring 332 is a conductor that transmits signals and the like of the element. The wiring 332 can be made of a metal such as W or copper (Cu). The wiring 332 and the semiconductor region can be connected by a contact plug 333. The contact plug 333 is made of a columnar metal. The semiconductor substrate 300 and the wiring region 330 constitute the semiconductor substrate 11 in FIG. 1 .

[0077] The insulating film 345 insulates the rear surface of the semiconductor substrate 300. The insulating film 345 is made of, for example, SiO ２ It can be configured as follows.

[0078] The photoelectric conversion film 354 is, for example, an organic photoelectric conversion film that generates charges in response to incident light. The photoelectric conversion film 354 can be made of an organic photoelectric conversion material including, for example, a rhodamine dye, a melacyanine dye, a quinacridone, a phthalocyanine dye, a coumarin dye, or tris-8-hydroxyquinoline Al.

[0079] The upper electrode 355 is a transparent electrode disposed adjacent to the photoelectric conversion film 354. The upper electrode 355 can be made of, for example, indium tin oxide (ITO). The readout electrode 351 is an electrode that reads out charges generated by the photoelectric conversion film 354.

[0080] The transparent semiconductor layer 353 accumulates the charges generated by the photoelectric conversion film 354. The transparent semiconductor layer 353 can be made of an oxide semiconductor film such as indium-gallium-zinc oxide (IGZO). The insulating film 352 is a film that provides insulation between the transparent semiconductor layer 353 and the storage electrodes 356a and the like. The insulating film 352 can be made of, for example, SiO ２The storage electrodes 356a, etc. control the storage and output of charges in the transparent semiconductor layer 353. The storage electrodes 356a, etc. can be made of, for example, ITO.

[0081] The through electrode 341 is an electrode configured to penetrate the semiconductor substrate 300. This through electrode 341 constitutes part of the wiring that connects the read electrode 351 and the pixel circuit 120c arranged on the front surface side of the semiconductor substrate 300. Specifically, the through electrode 341 connects the read electrode 351 and the wiring 332 in the wiring region 330.

[0082] The sealing film 391 seals the photoelectric conversion unit 101 and the like. The color filters 392 and 394 are optical filters that transmit light of a predetermined wavelength from the incident light. The color filter 392 is disposed between the on-chip lens 393 and the sealing film 391, and transmits one of red light, green light, and blue light, as well as infrared light. The color filter 394 is disposed between the storage electrode 356 and the like and the semiconductor substrate 300, and transmits infrared light. The on-chip lens 393 is a lens that focuses the incident light on the photoelectric conversion unit 161 and the like.

[0083] It should be noted that the configuration of the pixel unit 100 is not limited to this example, and for example, it may be formed on a semiconductor substrate 300 made of a compound semiconductor.

[0084] 8A and 8B are diagrams illustrating the effects of the photodetection device according to the first embodiment of the present disclosure. FIG. 8A is a cross-sectional view illustrating the effects of the pixel group 40 of the photodetection device 1. This figure shows a simplified representation of the pixel group 40. By disposing the pixel unit 150 so that it is offset by one pixel (pixel 160) with respect to the pixel unit 100, the readout electrode 351 and the through-electrode 341, which are common electrodes, can be disposed near the boundary or end of the pixel unit 100. This allows the readout electrode 351 to be connected via the shortest route to the surface side of the semiconductor substrate 300 on which the pixel circuit 120c is disposed.

[0085] FIG. 8B shows pixel units 100 and 150 of the prior art. This figure is shown as a comparative example. The pixel units 100 and 150 in this figure are arranged in positions where their respective ends overlap. In contrast, the through-electrode 341 must avoid the pixel unit 100, so it is arranged near the boundary or end of the pixel unit 100. Therefore, a wiring 346 and a via plug 347 are required to connect the readout electrode 351 and the through-electrode 341. The wiring length is increased by the length of this wiring 346. Therefore, in the pixel unit 150 shown in this figure, parasitic capacitance caused by the wiring 346 is added, reducing the conversion gain in the charge detection unit. This results in a deterioration of the signal-to-noise ratio (S / N).

[0086] In this way, the photodetector 1 according to the first embodiment of the present disclosure can shorten the wiring length from the pixel unit 150 to the pixel circuit 120c by staggering the pixel units 150 stacked on the pixel unit 100. This can reduce loss and signal transmission delay.

[0087] 2. Second Embodiment The photodetector 1 of the first embodiment described above uses the pixel unit 100 for distance measurement. In contrast, the photodetector 1 of the second embodiment of the present disclosure differs from the first embodiment described above in that the pixel 110 is used for an EVS (Event-based Vision Sensor).

[0088] 9 is a diagram showing an example of the configuration of a pixel group according to a second embodiment of the present disclosure. The figure is a circuit diagram showing a portion of the pixels and pixel circuits of a pixel group 40. The pixel units 100 in the figure are used to detect a change in the luminance of incident light in the same direction as an event.

[0089] The pixel circuit of FIG. 9 includes a current-voltage conversion circuit 130, a differentiation circuit 140, a luminance change detection unit 141, and an output unit 142.

[0090] The current-voltage conversion circuit 130 converts the photocurrent from the photoelectric conversion unit 111 into a voltage signal. During this conversion, the current-voltage conversion circuit 130 performs logarithmic compression of the voltage signal. The converted voltage signal is output to the differentiation circuit 140. The current-voltage conversion circuit 130 includes MOS transistors 131 to 133. In FIG. 9 , Vdd represents a power supply line Vdd that supplies power. Vb1 represents a signal line Vb1 that supplies a bias voltage. The MOS transistors 131 and 133 can be n-channel MOS transistors. The MOS transistor 132 can be a p-channel MOS transistor.

[0091] The MOS transistor 131 is a MOS transistor that supplies a current to the photoelectric conversion unit 111. A sink current (photocurrent) corresponding to incident light flows through the photoelectric conversion unit 111. The MOS transistor 131 supplies this sink current. At this time, the gate of the MOS transistor 131 is driven by the output voltage of a MOS transistor 133 (described later), and outputs a source current equal to the sink current of the photoelectric conversion unit 111. Because the gate-source voltage Vgs of the MOS transistor is a voltage corresponding to the source current, the source voltage of the MOS transistor 131 is a voltage corresponding to the current of the photoelectric conversion unit 111. As a result, the photocurrent of the photoelectric conversion unit 111 is converted into a voltage signal.

[0092] MOS transistor 133 is a MOS transistor that amplifies the source voltage of MOS transistor 131. MOS transistor 132 constitutes a constant current load for MOS transistor 133. An amplified voltage signal is output to the drain of MOS transistor 133. This voltage signal is output to differentiation circuit 140 and also fed back to the gate of MOS transistor 131. When Vgs of MOS transistor 131 is equal to or lower than the threshold voltage, the source current changes exponentially with respect to changes in Vgs. Therefore, the output voltage of MOS transistor 133 that is fed back to the gate of MOS transistor 131 is a voltage signal that is logarithmically compressed photocurrent of photoelectric conversion unit 111, which is equal to the source current of MOS transistor 131.

[0093] The differentiating circuit 140 extracts the change in the voltage signal output from the current-voltage conversion circuit 130 and integrates the extracted change to generate a signal corresponding to the amount of change in the voltage signal. This signal corresponds to a signal corresponding to a change in the luminance of the incident light. This signal is referred to as an optical signal. The differentiating circuit 140 outputs the generated optical signal to a luminance change detection unit 141. A control signal is also input to the differentiating circuit 140 from the vertical drive circuit 33. This control signal is a signal that resets the circuit that detects the amount of change in the voltage signal.

[0094] The luminance change detection unit 141 detects changes in the luminance of incident light. The luminance change detection unit 141 in FIG. 9 detects changes in the optical signal output from the differentiation circuit 140 based on a threshold value. That is, when the change in the optical signal exceeds the threshold value, the change in the optical signal is detected as an event. Here, an event in the direction in which the optical signal increases is called an ON event, and an event in the direction in which the optical signal decreases is called an OFF event. The luminance change detection unit 141 detects ON events and OFF events using the voltages of the ON event detection signal and OFF event detection signal supplied from the vertical drive circuit 33 as threshold values. The detection results are output to the output unit 142.

[0095] The output section 142 outputs the ON event and OFF event detected by the brightness change detection section 141 based on the control signal from the vertical drive circuit 33 as an event signal.

[0096] 10 is a diagram showing an example of the configuration of a pixel group according to the second embodiment of the present disclosure. Similar to FIG. 7, this figure is a cross-sectional view showing an example of the configuration of a pixel group 40. In this figure, the configuration of the pixel unit 100 is different from that of the pixel group 40 in FIG.

[0097] The pixel unit 100 in FIG. 10 includes a pixel 110. This pixel 110 includes a photoelectric conversion unit 111. The photoelectric conversion unit 111 in FIG. 10 includes a semiconductor region 301 and a semiconductor region 303. The semiconductor region 303 is a semiconductor region configured to have a relatively high impurity concentration of the same conductivity type as the semiconductor region 301. A contact plug 333 is connected to this semiconductor region 303. The semiconductor region 303 is a region for reducing the connection resistance of the contact plug 333. The photoelectric conversion unit 111 is connected to the current-voltage conversion circuit 130 via the contact plug 333 and a wiring 332.

[0098] The configuration of the photodetector 1 other than that described above is the same as the configuration of the photodetector 1 in the first embodiment of the present disclosure, and therefore description thereof will be omitted.

[0099] In this way, in the photodetector device 1 according to the second embodiment of the present disclosure, the pixel unit 100 can be used for EVS.

[0100] (3. Third Embodiment) The photodetector 1 of the first embodiment described above uses a pixel unit 150 including pixels 160 having photoelectric conversion units formed by an organic photoelectric conversion film. In contrast, the photodetector 1 of the third embodiment of the present disclosure differs from the first embodiment described above in that it uses a pixel unit 200 including pixels (pixels 210) having photoelectric conversion units formed on a semiconductor substrate.

[0101] <Pixel Group> Fig. 11 is a diagram showing an example configuration of a pixel group according to a third embodiment of the present disclosure. Similar to Fig. 2, this diagram shows an example configuration of a pixel group 40. The pixel group 40 in Fig. 11 differs from the pixel group 40 in Fig. 2 in that it includes a pixel unit 200 instead of the pixel unit 150, the pixel unit 100 includes a plurality of pixels, and pixel circuits 120d and 120e are arranged.

[0102] 11 includes a plurality of pixels 110 (pixel 110a, pixel 110b, pixel 110c, and pixel 110d). The pixel unit 100 is connected to a pixel circuit 120a.

[0103] The pixel unit 200 includes a plurality of pixels 210 (pixel 210a, pixel 210b, pixel 210c, and pixel 210d) having photoelectric conversion units formed on a semiconductor substrate 300. The pixels 210a, 210b, 210c, and 210d are stacked on the pixels 110a, 110b, 110c, and 110d of the pixel unit 100. The pixel unit 200 is also connected to a pixel circuit 120b.

[0104] The pixel 110a, the pixel 110b, the pixel 110c, and the pixel 110d are examples of a "first pixel" in the present disclosure. The pixel 210a, the pixel 210b, the pixel 210c, and the pixel 210d are examples of a "second pixel" in the present disclosure. The pixel unit 200 is an example of a "second pixel unit" in the present disclosure.

[0105] 12 and 13 are diagrams showing an example of the configuration of a pixel group 40 according to the third embodiment of the present disclosure.

[0106] 12 shows a circuit diagram of the pixel unit 100 and pixel circuit 120d of the pixel group 40. The pixel unit 100 in the figure includes a pixel 110a, a pixel 110b, a pixel 110c, and a pixel 110d, and MOS transistors 112 to 115. A photoelectric conversion unit 111a, a photoelectric conversion unit 111b, a photoelectric conversion unit 111c, and a photoelectric conversion unit 111d are arranged in the pixel 110a, the pixel 110b, the pixel 110c, and the pixel 110d, respectively.

[0107] The MOS transistor 112 transfers the charge of the photoelectric conversion unit 111a to the charge detection unit 125 of the pixel circuit 120d. The MOS transistor 113 transfers the charge of the photoelectric conversion unit 111b to the charge detection unit 125 of the pixel circuit 120d. The MOS transistor 114 transfers the charge of the photoelectric conversion unit 111c to the charge detection unit 125 of the pixel circuit 120d. The MOS transistor 115 transfers the charge of the photoelectric conversion unit 111d to the charge detection unit 125 of the pixel circuit 120d. Signal lines TG1, TG2, TG3, and TG4 are connected to the gates of the MOS transistors 112, 113, 114, and 115, respectively.

[0108] 13 shows a circuit diagram of the pixel unit 200 and pixel circuit 120e of the pixel group 40. The pixel unit 200 in the figure includes a pixel 210a, a pixel 210b, a pixel 210c, and a pixel 210d, and MOS transistors 212 to 215. A photoelectric conversion unit 211a, a photoelectric conversion unit 211b, a photoelectric conversion unit 211c, and a photoelectric conversion unit 211d are arranged in the pixel 210a, the pixel 210b, the pixel 210c, and the pixel 210d, respectively.

[0109] The MOS transistor 212 transfers the charge of the photoelectric conversion unit 211a to the charge detection unit 125 of the pixel circuit 120e. The MOS transistor 213 transfers the charge of the photoelectric conversion unit 211b to the charge detection unit 125 of the pixel circuit 120e. The MOS transistor 214 transfers the charge of the photoelectric conversion unit 211c to the charge detection unit 125 of the pixel circuit 120e. The MOS transistor 215 transfers the charge of the photoelectric conversion unit 211d to the charge detection unit 125 of the pixel circuit 120b. The gates of the MOS transistors 212, 213, 214, and 215 are connected to signal lines TG1, TG2, TG3, and TG4, respectively.

[0110] The pixel circuits 120d and 120e can have the same circuit configuration as the pixel circuit 120c.

[0111] <Layout of pixel groups> Fig. 14 is a diagram showing an example of the layout of pixel groups according to the third embodiment of the present disclosure. Similar to Fig. 6, Fig. 14 is a plan view showing an example of the layout of pixel groups 40 in the pixel array section 13. As described above, the pixel group 40 in Fig. 14 is configured by stacking pixel units 100 and pixel units 200. Of the rectangles with dotted hatching in Fig. 14, the outer rectangle represents the pixel 110 of the pixel unit 100. The inner rectangle represents the pixel 210 of the pixel unit 200. The rectangle with dashed lines represents the region of the pixel unit 100. The dotted line region represents the region of the pixel unit 200.

[0112] A charge detection unit 125 (charge detection unit 125d) is arranged in the pixel unit 100. A charge detection unit 125 (charge detection unit 125e) is also arranged in the pixel unit 200. As shown in FIG. 14 , the pixel unit 200 is arranged offset by the amount of the pixel 210 on the upper side of FIG. 14 with respect to the pixel unit 100. Therefore, the charge detection unit 125d is arranged near the boundary of the pixel unit 200, and the charge detection unit 125e is arranged near the boundary of the pixel unit 100.

[0113] <Configuration of pixel group> Fig. 15 is a diagram showing an example configuration of a pixel group according to the third embodiment of the present disclosure. Similar to Fig. 7, this figure is a cross-sectional view showing an example configuration of a pixel group 40. The pixel group 40 in this figure differs from the pixel group 40 in Fig. 7 in that a pixel unit 200 is arranged instead of the pixel unit 150.

[0114] The photoelectric conversion units 111 (photoelectric conversion units 111b and 111c) of the pixels 110 (pixels 110b and 110c) of the pixel unit 100 are configured with a semiconductor region 301. The charge detection unit 125d is configured with a semiconductor region 302. A MOS transistor 113 is disposed between the photoelectric conversion unit 111b and the charge detection unit 125d. A MOS transistor 114 is disposed between the photoelectric conversion unit 111c and the charge detection unit 125d. The MOS transistors 113 and 114 are MOS transistors having flat gates.

[0115] The photoelectric conversion units 211 (photoelectric conversion units 211a and 211d) of the pixels 210 (pixels 210a and 210d) of the pixel unit 200 are configured with a semiconductor region 305. The semiconductor region 305 is a semiconductor region disposed in an upper layer of the semiconductor region 301. The charge detection unit 125e is configured with a semiconductor region 304. A MOS transistor 212 is disposed between the photoelectric conversion unit 211a and the charge detection unit 125e. A MOS transistor 215 is disposed between the photoelectric conversion unit 211d and the charge detection unit 125e. The MOS transistors 113 and 114 are MOS transistors having vertical gates, similar to the MOS transistor 112 in FIG. 7 .

[0116] As shown in FIG. 15 , the pixel unit 200 is disposed by being stacked on top of the pixel unit 100 .

[0117] The configuration of the photodetector 1 other than that described above is the same as the configuration of the photodetector 1 in the first embodiment of the present disclosure, and therefore description thereof will be omitted.

[0118] As described above, the photodetector 1 according to the third embodiment of the present disclosure is configured by stacking the pixel unit 200, which has the photoelectric conversion unit 211 formed on the semiconductor substrate, on the pixel unit 100. This allows the photodetector 1 to be made thinner.

[0119] (4. Fourth Embodiment) The photodetector 1 of the above-described third embodiment uses the pixel unit 100 and the pixel unit 200. In contrast, the photodetector 1 of the fourth embodiment of the present disclosure differs from the above-described third embodiment in that it further uses a pixel unit 150.

[0120] <Pixel Group> FIG. 16 is a diagram showing an example of the configuration of a pixel group according to the fourth embodiment of the present disclosure. Similar to FIG. 11 , FIG. 16 is a diagram showing an example of the configuration of a pixel group 40. The pixel group 40 in FIG. 16 differs from the pixel group 40 in FIG. 11 in that a pixel unit 150 and a pixel circuit 120c are further arranged. Note that the pixels 210a, 210b, 210c, and 210d in FIG. 16 are examples of the "third pixel" in the present disclosure. The pixel unit 200 in FIG. 16 is an example of the "third pixel unit" in the present disclosure. The pixels 160a, 160b, 160c, and 160d in FIG. 16 are examples of the "second pixel" in the present disclosure. The pixel unit 150 in FIG. 16 is an example of the "second pixel unit" in the present disclosure.

[0121] <Layout of pixel groups> Fig. 17 is a diagram showing an example of the layout of pixel groups according to the fourth embodiment of the present disclosure. Similar to Fig. 14, this figure is a plan view showing an example of the layout of pixel groups 40 in the pixel array section 13. The pixel 110 of the pixel unit 100 corresponds to blue light. The pixel 210 of the pixel unit 200 corresponds to red light. The pixel 160 of the pixel unit 150 corresponds to green light.

[0122] 17. The pixel unit 200 is disposed with a shift to the right and top in FIG. 17 relative to the pixel unit 100. The pixel unit 150 is disposed with a shift to the right in FIG. 17 relative to the pixel unit 100. Therefore, the charge detection unit 125d is disposed near the boundary of the pixel unit 200 and near the boundary of the pixel unit 150. The charge detection unit 125e is disposed near the boundary of the pixel unit 100 and near the boundary of the pixel unit 150. The readout electrode 351 is disposed near the boundary of the pixel unit 100 and near the boundary of the pixel unit 200.

[0123] <Configuration of pixel group> Figure 18 is a diagram showing an example configuration of a pixel group according to the fourth embodiment of the present disclosure. Similar to Figure 15, this figure is a cross-sectional view showing an example configuration of a pixel group 40. The pixel group 40 in this figure differs from the pixel group 40 in Figure 15 in that a pixel unit 150 is further arranged. Furthermore, the pixel group 40 in this figure has a protective layer 395 arranged instead of a color filter 392.

[0124] The configuration of the photodetector 1 other than that described above is the same as the configuration of the photodetector 1 in the third embodiment of the present disclosure, and therefore description thereof will be omitted.

[0125] As described above, the photodetector 1 according to the fourth embodiment of the present disclosure is configured by stacking pixel units 100 and 200 each having a photoelectric conversion unit disposed on a semiconductor substrate, and pixel unit 150 each having a photoelectric conversion unit formed of an organic photoelectric conversion film. Since pixel unit 100, pixel unit 200, and pixel unit 200 are disposed at positions offset from each other, it is possible to shorten the wiring length from pixel unit 150 to pixel circuit 120c and the wiring length from pixel unit 200 to pixel circuit 120b.

[0126] (5. Fifth Embodiment) In the photodetector 1 of the above-described fourth embodiment, pixel units (pixel unit 100 and pixel unit 200) each having a photoelectric conversion unit disposed on a semiconductor substrate are stacked. In contrast, the photodetector 1 of the fifth embodiment of the present disclosure differs from the above-described first embodiment in that pixel units each having a photoelectric conversion unit made of an organic photoelectric conversion film are stacked.

[0127] <Pixel Group> FIG. 19 is a diagram illustrating an example configuration of a pixel group according to a fifth embodiment of the present disclosure. Similar to FIG. 16 , FIG. 19 is a diagram illustrating an example configuration of a pixel group 40. The pixel group 40 in FIG. 19 differs from the pixel group 40 in FIG. 16 in that a pixel unit 250 is arranged instead of the pixel unit 200. A pixel circuit 120e is connected to the pixel unit 250. Note that the pixels 160a, 160b, 160c, and 160d in FIG. 19 are examples of "second pixels" in the present disclosure. The pixel unit 150 in FIG. 19 is an example of "second pixel unit" in the present disclosure. The pixels 260a, 260b, 260c, and 260d are examples of "third pixels" in the present disclosure. The pixel unit 250 in FIG. 19 is an example of "third pixel unit" in the present disclosure.

[0128] 20 is a diagram showing an example configuration of a pixel group according to the fifth embodiment of the present disclosure. The figure is a circuit diagram showing an example configuration of a pixel unit 250 in the pixel group 40. The pixel unit 250 includes a plurality of pixels 260 (pixel 260a, pixel 260b, pixel 260c, and pixel 260d).

[0129] 20 includes a photoelectric conversion unit 261 (photoelectric conversion unit 261a, photoelectric conversion unit 261b, photoelectric conversion unit 261c, and photoelectric conversion unit 261d) having a photoelectric conversion film 374 made of an organic material. An upper electrode 375 is disposed above this photoelectric conversion film 374, and a transparent semiconductor layer 373 is disposed below it. A readout electrode 371 is connected to the transparent semiconductor layer 373. Storage electrodes 376a, 376b, 376c, and 376d are disposed adjacent to the transparent semiconductor layer 373. An insulating film 372 is disposed between the transparent semiconductor layer 373 and the readout electrode 371, storage electrode 376a, etc. As described above, the pixel unit 250 is connected to the pixel circuit 120e.

[0130] <Layout of Pixel Groups> FIG. 21 is a diagram showing an example of the layout of pixel groups according to the fifth embodiment of the present disclosure. Similar to FIG. 17 , this figure is a plan view showing an example of the layout of pixel groups 40 in the pixel array section 13. The dashed-dotted rectangle in FIG. 21 represents the area of ​​the pixel unit 250. The pixel unit 150 is arranged shifted to the right and top in FIG. 21 relative to the pixel unit 100. The pixel unit 250 is arranged shifted to the right in FIG. 21 relative to the pixel unit 100. Therefore, the charge detection section 125d is arranged near the boundary of the pixel unit 200 and the boundary of the pixel unit 250. Furthermore, the readout electrode 351 is arranged near the boundary of the pixel unit 100 and the boundary of the pixel unit 250. Furthermore, the readout electrode 371 is arranged near the boundary of the pixel unit 100 and the boundary of the pixel unit 200.

[0131] <Configuration of pixel group> Fig. 22 is a diagram showing an example configuration of a pixel group according to the fifth embodiment of the present disclosure. Similar to Fig. 18, this figure is a cross-sectional view showing an example configuration of a pixel group 40. The pixel group 40 in this figure differs from the pixel group 40 in Fig. 18 in that a pixel unit 250 is arranged instead of the pixel unit 200.

[0132] The pixel unit 250 is configured by being stacked on top of the pixel unit 150. Note that an insulating layer 360 is disposed between the pixel unit 150 and the pixel unit 250.

[0133] The configuration of the photodetector 1 other than that described above is the same as the configuration of the photodetector 1 in the fourth embodiment of the present disclosure, and therefore description thereof will be omitted.

[0134] As described above, the photodetector 1 according to the fifth embodiment of the present disclosure is configured by stacking pixel unit 100, which has a photoelectric conversion unit disposed on a semiconductor substrate, and pixel unit 150 and pixel unit 250, which have photoelectric conversion units formed of organic photoelectric conversion films. Since pixel unit 100, pixel unit 150, and pixel unit 250 are disposed at positions offset from each other, it is possible to shorten the wiring length from pixel unit 150 to pixel circuit 120c and the wiring length from pixel unit 250 to pixel circuit 120e.

[0135] 6. Sixth Embodiment A variation of the photodetector 1 of the first embodiment will be described.

[0136] 23 is a diagram showing an example configuration of a pixel group according to the sixth embodiment of the present disclosure. The diagram shows an example configuration of a pixel group 40. The upper side of the diagram shows a plan view of the pixel group 40, and the lower side of the diagram shows a cross-sectional view of the pixel group 40.

[0137] The pixel unit 150 in FIG. 23 is configured with pixels 160 arranged in four rows and two columns. Two readout electrodes 351 are arranged in this pixel unit 150. A wiring 346 that connects these readout electrodes 351 is further arranged in the pixel unit 150 in FIG. 23. The pixel unit 100 in FIG. 23 includes one pixel 110. This pixel unit 100 is configured to be approximately the same size as the two pixel units 150 arranged adjacent to it. The two pixel units 150 are also arranged offset upward in FIG. 23 with respect to the pixel unit 100. It is also possible to arrange the pixels 160 in four rows and four columns.

[0138] In the lower diagram of FIG. 23, a through electrode 341 is disposed at the boundary of the pixel unit 100 , and a wiring 346 is disposed on the through electrode 341 .

[0139] 24 is a diagram showing another example configuration of a pixel group according to the sixth embodiment of the present disclosure. The diagram shows an example configuration of a pixel group 40. The upper side of the diagram shows a plan view of the pixel group 40, and the lower side of the diagram shows a cross-sectional view of the pixel group 40.

[0140] Two pixel units 150 each having pixels 160 arranged in four rows and two columns are arranged above the pixel unit 100 in FIG. 24, shifted by two pixels 160.

[0141] In the lower diagram of FIG. 24, a through electrode 341 is disposed at the boundary of the pixel unit 100 , and a wiring 346 is disposed on the through electrode 341 .

[0142] 25 is a diagram showing another example configuration of a pixel group according to the sixth embodiment of the present disclosure. The diagram shows an example configuration of a pixel group 40. The upper side of the diagram shows a plan view of the pixel group 40, and the lower side of the diagram shows a cross-sectional view of the pixel group 40.

[0143] Two pixel units 150 each having pixels 160 arranged in four rows and two columns are arranged above and to the right of the pixel unit 100 in FIG. 25, shifted by one pixel 160.

[0144] In the lower diagram of FIG. 25, a through electrode 341 is disposed at the boundary of the pixel unit 100 , and a wiring 346 is disposed on the through electrode 341 .

[0145] 26 is a diagram showing another example configuration of a pixel group according to the sixth embodiment of the present disclosure. The diagram shows an example configuration of a pixel group 40. The upper side of the diagram shows a plan view of the pixel group 40, and the lower side of the diagram shows a cross-sectional view of the pixel group 40.

[0146] Two pixel units 150, each configured with pixels 160 arranged in four rows and two columns, are shifted by two pixels 160 up and one pixel 160 to the right in FIG. 26 relative to the pixel unit 100.

[0147] In the lower diagram of FIG. 26, a through electrode 341 is disposed at the boundary of the pixel unit 100 , and a wiring 346 is disposed on the through electrode 341 .

[0148] 27 is a diagram showing another example configuration of a pixel group according to the sixth embodiment of the present disclosure. The diagram shows an example configuration of a pixel group 40. The upper side of the diagram shows a plan view of the pixel group 40, and the lower side of the diagram shows a cross-sectional view of the pixel group 40.

[0149] The pixel unit 150 in Fig. 27 is configured by arranging pixels 160 in two rows and two columns. The pixel unit 150 is arranged above the pixel unit 100 in Fig. 27, shifted relative to the pixel unit 100. In the lower drawing of Fig. 27, the through electrodes 341 are arranged at the boundaries of the pixel units 100.

[0150] 28 is a diagram showing another example configuration of a pixel group according to the sixth embodiment of the present disclosure. The diagram shows an example configuration of a pixel group 40. The upper side of the diagram shows a plan view of the pixel group 40, and the lower side of the diagram shows a cross-sectional view of the pixel group 40.

[0151] 28, a pixel unit 150 configured by arranging pixels 160 in two rows and two columns is shifted to the left of the pixel unit 100. In the lower drawing of FIG.

[0152] 29 is a diagram showing another example configuration of a pixel group according to the sixth embodiment of the present disclosure. The diagram shows an example configuration of a pixel group 40. The upper side of the diagram shows a plan view of the pixel group 40, and the lower side of the diagram shows a cross-sectional view of the pixel group 40.

[0153] 28, a pixel unit 150 configured by arranging pixels 160 in two rows and two columns is shifted to the left and top of the pixel unit 100. In the lower drawing of FIG.

[0154] 30A is a diagram showing another example configuration of a pixel group according to the sixth embodiment of the present disclosure. The figure shows an example configuration of a pixel group 40. The upper side of the figure shows a plan view of the pixel group 40, and the lower side of the figure shows a cross-sectional view of the pixel group 40.

[0155] The through electrodes 341 in Fig. 30A are arranged at corners of the pixel unit 100. Furthermore, the pixel unit 150, which is configured by arranging pixels 160 in two rows and two columns, is arranged shifted to the left of the pixel unit 100 in Fig. 30A . Furthermore, the pixel unit 150 further has wiring 346 that connects the readout electrodes 351 and the through electrodes 341. In the lower diagram of Fig. 30A , the through electrodes 341 are arranged at the boundary of the pixel unit 100. The wiring 346 can connect the readout electrodes 351 and the through electrodes 341 at a shorter distance than when there is no shift between them.

[0156] 30B is a diagram showing another example of the configuration of a pixel group of a comparative example. This diagram shows an example in which the pixel units 150 are arranged without being shifted. The wiring 346 is configured to be shaped along the diagonal line of the pixel unit 100. The wiring 346 is longer than in the pixel group 40 of FIG. 30A.

[0157] 31 is a diagram showing another example configuration of a pixel group according to the sixth embodiment of the present disclosure. This diagram shows an example arrangement of a pixel group 40. The pixel group 40 in this diagram includes a pixel unit 100 and a pixel unit 150. The pixel unit 100 includes pixels 110 (pixels 110b and 110c) corresponding to red light and pixels 110 (pixels 110a and 110d) corresponding to blue light. The pixel unit 150 includes pixels 160 (pixels 160a, 160b, 160c, and 160d) corresponding to green light.

[0158] (7. Configuration of Electronic Device) The photodetector 1 as described above can be applied to various electronic devices, such as imaging systems such as digital still cameras and digital video cameras, mobile phones with imaging functions, or other devices with imaging functions.

[0159] Fig. 32 is a block diagram showing an example of the configuration of an imaging device mounted on an electronic device. As shown in Fig. 32, an electronic device 701 includes an optical system 702, a photodetector 703, and a DSP (Digital Signal Processor) 704. The DSP 704, a display device 705, an operation system 706, a memory 708, a recording device 709, and a power supply system 710 are connected via a bus 707, and the electronic device 701 is capable of capturing still images and moving images.

[0160] The optical system 702 is configured to have one or more lenses, and guides image light (incident light) from a subject to the photodetector 703 , forming an image on the light-receiving surface (sensor portion) of the photodetector 703 .

[0161] The photodetector 1 having any of the above-described configuration examples is applied to the photodetector 703. Electrons are accumulated in the photodetector 703 for a certain period of time in accordance with an image formed on the light-receiving surface via the optical system 702. A signal corresponding to the electrons accumulated in the photodetector 703 is input to the DSP 704.

[0162] The DSP 704 performs various signal processing on the signal from the photodetector 703 to acquire an image, and temporarily stores the image data in a memory 708. The image data stored in the memory 708 is recorded in a recording device 709 or supplied to a display device 705 to display the image. In addition, an operation system 706 accepts various operations by the user and supplies operation signals to each block of the electronic device 701, and a power supply system 710 supplies the power necessary to drive each block of the electronic device 701.

[0163] (8. Application Examples) FIG. 33A is a diagram schematically illustrating an example of the overall configuration of a light detection system 2000 including the light detection device 1. FIG. 33B is a diagram illustrating an example of the circuit configuration of the light detection system 2000. The light detection system 2000 includes a light emitting device 2001 as a light source unit that emits infrared light, and a light detection device 2002 as a light receiving unit having a photoelectric conversion element. The light detection device 1 described above can be used as the light detection device 2002. The light detection system 2000 may further include a system control unit 2003, a light source driving unit 2004, a sensor control unit 2005, a light source side optical system 2006, and a camera side optical system 2007.

[0164] The photodetector 2002 can detect light L1 and light L2. Light L1 is external ambient light reflected by the object (measurement target) 2100 ( FIG. 33A ). Light L2 is light emitted by the light-emitting device 2001 and then reflected by the object 2100. Light L1 is, for example, visible light, and light L2 is, for example, infrared light. Light L1 can be detected by a photoelectric conversion unit in the photodetector 2002, and light L2 can be detected by a photoelectric conversion region in the photodetector 2002. Image information of the object 2100 can be obtained from light L1, and distance information between the object 2100 and the photodetector system 2000 can be obtained from light L2. The photodetector system 2000 can be mounted, for example, on an electronic device such as a smartphone or a mobile object such as a car. The light-emitting device 2001 can be configured, for example, by a semiconductor laser, a surface-emitting semiconductor laser, or a vertical-cavity surface-emitting laser (VCSEL). The method of detecting the light L2 emitted from the light-emitting device 2001 by the photodetector 2002 can be, for example, an iTOF system, but is not limited to this. In the iTOF system, the photoelectric conversion unit can measure the distance to the subject 2100, for example, by using the time-of-flight (TOF). The method of detecting the light L2 emitted from the light-emitting device 2001 by the photodetector 2002 can also be, for example, a structured light system or a stereo vision system. For example, in the structured light system, a predetermined pattern of light is projected onto the subject 2100, and the distance between the photodetector 2000 and the subject 2100 can be measured by analyzing the distortion of the pattern. In addition, in the stereo vision system, for example, two or more cameras are used to acquire two or more images of the subject 2100 viewed from two or more different viewpoints, thereby measuring the distance between the photodetector 2000 and the subject. The light emitting device 2001 and the light detecting device 2002 can be controlled synchronously by a system control unit 2003 .

[0165] (9. Application Examples to Mobile Bodies) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0166] FIG. 34 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0167] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 34, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0168] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0169] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0170] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0171] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0172] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0173] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0174] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0175] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0176] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 34, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0177] FIG. 35 is a diagram showing an example of the installation position of the imaging unit 12031.

[0178] In FIG. 35, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0179] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0180] 35 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0181] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0182] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0183] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0184] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0185] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the image capturing unit 12031 in the above-described configuration. Specifically, the photodetector 1 in FIG. 1 can be applied to the image capturing unit 12031.

[0186] (10. Application Example to Endoscopic Surgery System) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0187] FIG. 36 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0188] 36 shows an operator (doctor) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0189] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the example shown, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible scope having a flexible lens barrel.

[0190] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0191] An optical system and an image sensor are provided inside the camera head 11102, and light reflected from the object of observation (observation light) is collected onto the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is sent to a camera control unit (CCU) 11201 as RAW data.

[0192] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various types of image processing on the image signal, such as development processing (demosaic processing), to display an image based on the image signal.

[0193] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0194] The light source device 11203 is composed of a light source such as an LED (light emitting diode), and supplies irradiation light to the endoscope 11100 when photographing the surgical site, etc.

[0195] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) of the endoscope 11100.

[0196] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 inflates the body cavity of the patient 11132 through the insufflation tube 11111 in order to ensure a clear field of view for the endoscope 11100 and a working space for the surgeon. The recorder 11207 is a device capable of recording various types of information related to the surgery. The printer 11208 is a device capable of printing various types of information related to the surgery in various formats such as text, images, or graphs.

[0197] The light source device 11203, which supplies illumination light to the endoscope 11100 when photographing the surgical site, can be configured from a white light source, such as an LED, a laser light source, or a combination of these. When the white light source is configured from a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, allowing the light source device 11203 to adjust the white balance of the captured image. In this case, it is also possible to time-share images corresponding to each RGB by irradiating the object of observation with laser light from each RGB laser light source and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, color images can be obtained without providing a color filter to the image sensor.

[0198] Furthermore, the light source device 11203 may be controlled to change the intensity of light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity to acquire images in a time-division manner and combining the images, it is possible to generate an image with a high dynamic range that is free from so-called blocked-up shadows and blown-out highlights.

[0199] The light source device 11203 may also be configured to supply light in a predetermined wavelength band corresponding to special light observation. Special light observation, for example, utilizes the wavelength dependence of light absorption in body tissues to irradiate light with a narrower band than the light irradiated during normal observation (i.e., white light), thereby capturing high-contrast images of specific tissues, such as blood vessels on the surface of mucous membranes, known as narrow-band imaging. Alternatively, special light observation may involve fluorescence observation, in which images are obtained using fluorescence generated by irradiating excitation light. Fluorescence observation may involve irradiating excitation light onto body tissues and observing the fluorescence from the tissue (autofluorescence observation), or by locally injecting a reagent such as indocyanine green (ICG) into the body tissue and irradiating the tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0200] FIG. 37 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0201] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0202] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses including a zoom lens and a focus lens.

[0203] The imaging unit 11402 may include one imaging element (a so-called single-chip type) or multiple imaging elements (a so-called multi-chip type). When the imaging unit 11402 is configured as a multi-chip type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining these signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to a 3D (dimensional) display. The 3D display allows the surgeon 11131 to more accurately grasp the depth of the biological tissue at the surgical site. Note that when the imaging unit 11402 is configured as a multi-chip type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0204] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately after the objective lens.

[0205] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted appropriately.

[0206] The communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0207] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of imaging, and / or information specifying the magnification and focus of the captured image.

[0208] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0209] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404 .

[0210] The communication unit 11411 is configured by a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0211] Furthermore, the communication unit 11411 transmits to the camera head 11102 a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0212] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102 .

[0213] The control unit 11413 performs various controls related to the imaging of the surgical site, etc. by the endoscope 11100 and the display of the captured image obtained by imaging the surgical site, etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0214] Furthermore, the control unit 11413 displays the captured image showing the surgical site, etc., on the display device 11202 based on the image signal subjected to image processing by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical tools such as forceps, specific biological parts, bleeding, mist generated when using the energy treatment tool 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When displaying the captured image on the display device 11202, the control unit 11413 may use the recognition results to superimpose various surgical support information on the image of the surgical site. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0215] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for electrical signal communication, an optical fiber for optical communication, or a composite cable of these.

[0216] In the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0217] The above describes an example of an endoscopic surgery system to which the technology according to the present disclosure can be applied. Of the above-described configurations, the technology according to the present disclosure can be applied to the endoscope 11100 and the imaging unit 11402 of the camera head 11102. Specifically, the light detection device 1 in FIG. 1 can be applied to the imaging unit 11402.

[0218] Although an endoscopic surgery system has been described as an example here, the technology disclosed herein may also be applied to other systems, such as a microsurgery system.

[0219] The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0220] The present technology may also be configured as follows: (1) A photodetector including: a first pixel unit including at least one first pixel having a photoelectric conversion unit formed on a semiconductor substrate; and a second pixel unit configured such that a plurality of second pixels, each having a photoelectric conversion unit whose electric charge is transferred to a common pixel circuit, are arranged in a matrix form and are stacked on the first pixel unit, the second pixel unit being shifted by at least one of the first pixels. (2) The photodetector according to (1), wherein the first pixel unit includes the first pixel having the photoelectric conversion unit made of silicon. (3) The photodetector according to (1), wherein the first pixel unit includes the first pixel having the photoelectric conversion unit made of a compound semiconductor. (4) The photodetector according to any of (1) to (3), wherein the second pixel unit includes the second pixel having the photoelectric conversion unit made of an organic photoelectric conversion film. (5) The photodetector according to (1) or (2), wherein the second pixel unit includes the second pixel having the photoelectric conversion unit made of silicon. (6) The photodetector according to any one of (1) to (4), wherein the second pixel unit includes at least one common electrode through which signal charges from the photoelectric conversion units of each of the second pixels are read out. (7) The photodetector according to (6), further including a columnar electrode arranged near a boundary of the first pixel unit and connecting the common electrode and any of the wirings connecting the common electrodes to a pixel circuit arranged on the semiconductor substrate. (8) The photodetector according to any one of (1) to (7), further including a third pixel unit stacked on the first pixel unit, wherein a plurality of third pixels are arranged in a matrix, each having a photoelectric conversion unit whose charges are transferred to a common charge detection unit, and wherein the third pixel unit is shifted from the first pixel unit and the second pixel unit by at least one first pixel. (9) The photodetector according to (8), wherein the third pixel unit includes the third pixel having the photoelectric conversion portion formed on the semiconductor substrate.(10) The photodetector according to (8), wherein the third pixel unit is arranged by being stacked on the second pixel unit. (11) The photodetector according to any one of (1) to (7), wherein the second pixel unit is configured by arranging a plurality of the second pixels in n rows and n columns (n ​​is 2 or 4). (12) The photodetector according to (11), wherein the first pixel unit is configured to have approximately the same size as the second pixel unit. (13) The photodetector according to any one of (1) to (7), wherein the second pixel unit is configured by arranging a plurality of the second pixels in n rows and m columns (n ​​is 2 or 4, m is n / 2). (14) The photodetector according to (13), wherein the first pixel unit is configured to have approximately the same size as two of the second pixel units arranged adjacent to each other. (15) The photodetector according to any one of (1) to (14), wherein the first pixel unit includes the first pixel for receiving light that is emitted from a light source and reflected by an object in order to detect the distance to the object. (16) The photodetector according to any one of (1) to (14), wherein the first pixel unit includes the first pixel for detecting a change in luminance of incident light in the same direction as an event. (17) A photodetector comprising: a first pixel unit including at least one first pixel having a photoelectric conversion unit formed on a semiconductor substrate; and a second pixel unit configured by arranging a plurality of second pixels in a matrix form, each having a photoelectric conversion unit whose respective charges are transferred to a common charge detection unit, and stacked on the first pixel unit, wherein the second pixel unit has at least one common electrode through which signal charges from the photoelectric conversion units of the plurality of second pixels are read out, and either the common electrode or wiring connecting the plurality of common electrodes to each other is arranged across a boundary of the first pixel unit. (18) The photodetector according to (17), further comprising a columnar electrode arranged near a boundary of the first pixel unit and connecting either the common electrode or the wiring to a pixel circuit arranged on the semiconductor substrate.(19) An electronic device having: a first pixel unit including at least one first pixel having a photoelectric conversion portion formed on a semiconductor substrate; a second pixel unit configured by arranging a plurality of second pixels in a matrix shape, each having a photoelectric conversion portion whose respective charges are transferred to a common pixel circuit, and stacked on the first pixel unit and shifted by at least one of the first pixels; and a processing circuit that processes a signal based on the charge generated by the photoelectric conversion portion of the first pixel and a signal based on the charge generated by the photoelectric conversion portion of the second pixel. (20) An electronic device comprising: a first pixel unit including at least one first pixel having a photoelectric conversion portion formed on a semiconductor substrate; a second pixel unit configured by arranging a plurality of second pixels in a matrix form, each having a photoelectric conversion portion whose respective charges are transferred to a common pixel circuit, and stacked on the first pixel unit; and a processing circuit that processes a signal based on the charge generated by the photoelectric conversion portion of the first pixel and a signal based on the charge generated by the photoelectric conversion portion of the second pixel, wherein the second pixel unit has at least one common electrode to which the photoelectric conversion portions of the plurality of second pixels are connected, and either the common electrode or wiring connecting the plurality of common electrodes is arranged across the boundary of the first pixel unit.

[0221] 1 Photodetector device 34 Column signal processing circuit 40 Pixel group 100, 150, 200, 250 Pixel unit 110, 110a, 110b, 110c, 110d, 160, 160a, 160b, 160c, 160d, 210, 210a, 210b, 210c, 210d, 260, 260a, 260b, 260c, 260d Pixel 111, 111a, 111b, 111c, 111d, 161, 161a, 161b, 161c, 161d, 211a, 211b, 211c, 211d, 261, 261a, 261b, 261c, 261d Photoelectric conversion unit 120a, 120b, 120c pixel circuit 300 semiconductor substrate 332, 346 wiring 341 through electrode 351, 371 readout electrode 354, 374 photoelectric conversion film 701 electronic device 703 photodetector 11402, 12031, 12101 to 12105 imaging section

Claims

a first pixel unit including at least one first pixel having a photoelectric conversion portion formed on a semiconductor substrate; a second pixel unit configured such that a plurality of second pixels each having a photoelectric conversion unit whose electric charge is transferred to a common pixel circuit are arranged in a matrix form and are stacked on the first pixel unit and are shifted by at least one of the first pixels; A light detection device having: 　 The photodetector according to claim 1 , wherein the first pixel unit includes the first pixel having the photoelectric conversion portion made of silicon. 　 The photodetector according to claim 1 , wherein the first pixel unit includes the first pixel having the photoelectric conversion portion made of a compound semiconductor. 　 The photodetector according to claim 1 , wherein the second pixel unit includes the second pixel having the photoelectric conversion portion formed of an organic photoelectric conversion film. 　 The photodetector according to claim 1 , wherein the second pixel unit includes the second pixel having the photoelectric conversion portion made of silicon. 　 The photodetector according to claim 1 , wherein the second pixel unit includes at least one common electrode through which signal charges are read out from the photoelectric conversion units of the plurality of second pixels.

7. The photodetector according to claim 6, further comprising a columnar electrode arranged near a boundary of the first pixel unit, the columnar electrode connecting the common electrode and any of the wirings connecting the plurality of common electrodes to a pixel circuit arranged on the semiconductor substrate.

2. The photodetection device according to claim 1, further comprising a third pixel unit configured such that a plurality of third pixels, each having a photoelectric conversion unit whose respective charges are transferred to a common charge detection unit, are arranged in a matrix and stacked on the first pixel unit, and the third pixel unit is positioned offset from the first pixel unit and the second pixel unit by at least one of the first pixels. 　 The photodetector according to claim 8 , wherein the third pixel unit includes the third pixel having the photoelectric conversion portion formed on the semiconductor substrate. 　 The photodetector device according to claim 8 , wherein the third pixel unit is disposed so as to be stacked on the second pixel unit.

2. The photodetector according to claim 1, wherein the second pixel unit is configured by arranging a plurality of the second pixels in n rows and n columns (n ​​is 2 or 4). 　 The photodetector device according to claim 11 , wherein the first pixel unit is configured to have substantially the same size as the second pixel unit.

2. The photodetector according to claim 1, wherein the second pixel unit is configured by arranging a plurality of the second pixels in n rows and m columns (n ​​is 2 or 4, and m is n / 2). 　 The photodetector device according to claim 13 , wherein the first pixel unit is configured to have substantially the same size as two of the second pixel units arranged adjacent to each other.

2. The light detection device according to claim 1, wherein the first pixel unit includes the first pixel for receiving reflected light that is emitted from a light source and reflected by the object in order to detect the distance to the object. 　 The photodetector device according to claim 1 , wherein the first pixel unit includes the first pixel for detecting a change in luminance of incident light in the same direction as an event. 　 a first pixel unit including at least one first pixel having a photoelectric conversion portion formed on a semiconductor substrate; a second pixel unit configured by arranging a plurality of second pixels in a matrix form, each having a photoelectric conversion unit whose charge is transferred to a common charge detection unit, and stacked on the first pixel unit; and The second pixel unit has at least one common electrode from which signal charges are read out from the photoelectric conversion units of the plurality of second pixels, and either the common electrode or a wiring connecting the plurality of common electrodes is arranged across the boundary of the first pixel unit. Light detection device.

18. The photodetector device according to claim 17, further comprising a columnar electrode arranged near a boundary of the first pixel unit and connecting either the common electrode or the wiring to a pixel circuit arranged on the semiconductor substrate. 　 a first pixel unit including at least one first pixel having a photoelectric conversion portion formed on a semiconductor substrate; a second pixel unit configured such that a plurality of second pixels, each having a photoelectric conversion unit whose electric charge is transferred to a common pixel circuit, are arranged in a matrix, and stacked on the first pixel unit and shifted by at least one of the first pixels; a processing circuit that processes a signal based on the charge generated by the photoelectric conversion unit of the first pixel and a signal based on the charge generated by the photoelectric conversion unit of the second pixel; An electronic device having: 　 a first pixel unit including at least one first pixel having a photoelectric conversion portion formed on a semiconductor substrate; a second pixel unit configured by arranging a plurality of second pixels in a matrix form, each having a photoelectric conversion unit whose electric charge is transferred to a common pixel circuit, and stacked on the first pixel unit; a processing circuit that processes a signal based on the charge generated by the photoelectric conversion unit of the first pixel and a signal based on the charge generated by the photoelectric conversion unit of the second pixel; and The second pixel unit has at least one common electrode to which the photoelectric conversion units of the second pixels are connected, and either the common electrode or a wiring connecting the common electrodes to each other is arranged across the boundary of the first pixel unit. electronic equipment.

Images