Substrate processing device

Abstract

The present invention provides a substrate processing device capable of suppressing deviation of the exhaust amount of gas in a housing space of a substrate.　A substrate processing device (1) comprises: a support part (20) that supports a substrate (W); a conveyance part (30) that conveys the support part (20) from a first position to a second position; an irradiation part (40) that irradiates the front surface of the substrate (W) with an energy ray between the first position and the second position; a housing (10) that has a first inner surface (10b) facing the front surface of the substrate (W) at least at the second position and a second inner surface (10c) facing the first inner surface (10b), and that houses the support part; an exhaust part (54) that exhausts gas from the interior of the housing at an exhaust position further away from the first position than the second position is; and a partition wall (60) that protrudes from the second inner surface (10c) toward the first inner surface (10b) at a position between the second position and the exhaust position, that has an end positioned between the first inner surface (10b) and the back surface of the substrate (W) supported by the support part (20), and that has an opening (61) formed between the partition wall and the first inner surface (10b).

Description

Substrate Processing Equipment

[0001] The present disclosure relates to a substrate processing apparatus.

[0002] Patent Document 1 discloses a substrate processing apparatus including a mounting table for mounting a substrate, a drive mechanism for moving the mounting table back and forth between a substrate transfer position and a processing chamber, an ultraviolet irradiation unit for irradiating ultraviolet rays onto the substrate in the processing chamber, and a partition member. The partition member is provided to separate the processing chamber from a driving chamber in which the drive mechanism is located into upper and lower sections, and has a slit formed therein through which a support unit for supporting the mounting table moves. In the substrate processing apparatus disclosed in Patent Document 1, the inside of the driving chamber is evacuated through a first exhaust port formed in the driving chamber, and further, the inside of the driving chamber and the processing chamber are evacuated through a second exhaust port facing the slit.

[0003] Japanese Patent Application Laid-Open No. 2015-207621

[0004] Substrates that have undergone chemical cleaning treatment may be further cleaned by irradiating them with energy rays in a gas-filled storage space. Depending on the chemical used in the chemical cleaning treatment, the chemical remaining on the substrate surface may react with the gas, causing abnormalities on the substrate surface. Furthermore, if the gas distribution in the storage space is uneven, abnormalities may also occur in uneven locations on the substrate surface. For this reason, it is necessary to exhaust the gas in the storage space as uniformly as possible.

[0005] An object of the present disclosure is to provide a substrate processing apparatus that can suppress unevenness in the amount of gas exhausted from within a substrate accommodation space.

[0006] In one exemplary embodiment, the substrate processing apparatus includes a support part that supports a substrate, a transport part that transports the support part from a first position to a second position in a transport direction along the surface of the substrate, an irradiation part that irradiates the surface of the substrate with an energy beam between the first position and the second position, a housing having a first inner surface facing the surface of the substrate at least at the second position and a second inner surface facing the first inner surface, and accommodating the support part between the first inner surface and the second inner surface, an exhaust part that exhausts gas from the housing at an exhaust position further away from the first position via the second position, and a partition wall that protrudes from the second inner surface toward the first inner surface between the second position and the exhaust position and has an opening formed between it and the first inner surface, and in the opposing direction of the first inner surface and the second inner surface, an end of the partition wall is located between the back surface of the substrate supported on the support part and the first inner surface.

[0007] According to the present disclosure, a substrate processing apparatus is provided that can suppress unevenness in the amount of gas exhausted from within a substrate accommodation space.

[0008] FIG. 1 is a plan view schematically showing an example of a wafer processing system. FIG. 2 is a front view schematically showing an example of a wafer processing system. FIG. 3 is a cross-sectional view schematically showing an example of a substrate processing apparatus. FIG. 4 is a partial cross-sectional view schematically showing an example of a substrate processing apparatus. FIG. 5 is a perspective view schematically showing an example of a substrate processing apparatus. FIG. 6 is a front view schematically showing an example of a substrate processing apparatus. FIG. 7 is a cross-sectional view schematically showing an example of a portion of a substrate processing apparatus. FIG. 8 is a perspective view schematically showing an example of a substrate processing apparatus from which a portion of a spacer member has been detached. FIG. 9(a) is a distribution diagram schematically showing a film thickness on a surface of a substrate when no partition wall and spacer member are arranged. FIG. 9(b) is a distribution diagram schematically showing a film thickness on a surface of a substrate when a partition wall and spacer member are arranged. FIG. 10 is a front view schematically showing an example of a substrate processing apparatus according to a modified example.

[0009] Hereinafter, a wafer processing system as a substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0010] <Wafer Processing System> First, the configuration of a wafer processing system according to this embodiment will be described. Figures 1 and 2 are a plan view and a front view, respectively, that schematically show the overall configuration of a wafer processing system 1. The wafer processing system 1 is an apparatus that performs predetermined processing on a wafer W (substrate). In this embodiment, the wafer processing system 1 is described as an example of a photolithography processing system that performs a resist film forming process and a development process on the wafer W.

[0011] 1, the wafer processing system 1 includes a cassette station 2 into which a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 3 equipped with a plurality of various processing devices that perform predetermined processing on the wafers W. The wafer processing system 1 has a configuration in which the cassette station 2, the processing station 3, and an interface station 4 that transfers the wafers W between them and an exposure device (not shown) adjacent to the opposite side of the processing station 3 are integrally connected. Note that, although two processing stations 3 are installed between the cassette station 2 and the interface station 4 as shown in FIG. 1, one processing station 3 or three or more processing stations may be installed.

[0012] The cassette station 2 is provided with a plurality of cassette mounting tables 21 and wafer transfer devices 22 and 23. The cassette station 2 uses the wafer transfer device 22 or 23 to transfer wafers between the cassette C placed on the mounting table 12 and the processing station 3. To this end, the wafer transfer devices 22 and 23 are each provided with a drive mechanism having movement paths in various directions, such as the horizontal direction (X direction and Y direction), the vertical direction (Z direction), and around the vertical axis (θ direction), as needed. The wafer transfer devices 22 and 23 may also be provided with a drive mechanism having movement paths in all of the above directions.

[0013] At least one of the wafer transfer devices 22 and 23 is capable of transferring wafers to and from the cassette C, and is also capable of transferring wafers to and from the processing station 3. Note that the transfer of wafers to and from the processing station 3 refers to, for example, transferring wafers to and from a third block G3 that includes a transfer device accessible by the wafer transfer device 33 in the processing station 3, which will be described later. The third block G3 may include multiple transfer devices (not shown) arranged vertically.

[0014] An inspection device (not shown) for inspecting the wafer W may be provided at a position accessible to either of the wafer transfer devices 22 and 23 .

[0015] The processing station 3 includes multiple blocks, e.g., three blocks G1, G2, and G4 (first, second, and fourth blocks). As shown in FIG. 2, multiple layers 31 each including the first and second blocks G1 and G2 are stacked vertically. For example, the first block G1 is provided on the front side of the processing station 3 (the negative X-direction side in FIG. 1), and the second block G2 is provided on the rear side of the processing station 3 (the positive X-direction side in FIG. 1). The fourth block G4 is provided on the interface station 4 side of the processing station 3 (the positive Y-direction side in FIG. 1) or at a connection point with another adjacent processing station 3. The fourth block G4 may include multiple transfer devices arranged vertically. The aforementioned third block G3 may also be provided within the processing station 3.

[0016] The first block G1 is provided with a plurality of processing devices, such as a patterning film forming device and a development processing device, both of which are not shown. The patterning film forming device may include, for example, a resist film forming device and an anti-reflection film forming device. For example, a plurality of processing devices are arranged horizontally. The number, arrangement, and type of these processing devices can be selected arbitrarily.

[0017] In these patterning film forming apparatuses and developing treatment apparatuses, for example, a predetermined processing liquid or a predetermined gas is supplied onto the wafer W. In this manner, the patterning film forming apparatus forms a resist film used as a mask when forming a pattern on an underlying film, or forms an anti-reflective film for efficiently performing a light irradiation process, such as an exposure process. Meanwhile, in the developing treatment apparatus, a portion of the exposed resist film is removed to form an uneven shape as the mask. A liquid treatment apparatus U1 that performs liquid treatment using a processing liquid for forming a resist film may be disposed in the first block G1 as an example of a patterning film forming apparatus.

[0018] For example, the second block G2 is provided with vertically and horizontally aligned heat treatment devices (not shown) that perform heat treatments such as heating and cooling of the wafer W. The second block G2 also is provided with vertically (Z direction in FIG. 2) and horizontally aligned hydrophobization devices that perform hydrophobization treatment to improve the fixation of the resist liquid to the wafer W, and peripheral exposure devices that expose the peripheral portion of the wafer W, both of which are not shown. The number and arrangement of these heat treatment devices, hydrophobization treatment devices, and peripheral exposure devices can also be selected as desired.

[0019] 1, a wafer transfer area 32 is formed in an area sandwiched between the first block G1 and the second block G2 in a plan view. In the wafer transfer area 32, for example, a wafer transfer device 33 is disposed.

[0020] The wafer transfer device 33 has a transfer arm that is movable in, for example, the Y direction, the front-rear direction, the θ direction, and the up-down direction. The wafer transfer device 33 moves within the wafer transfer area 32 and can transfer the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. When there are multiple processing stations 3 as shown in FIG. 1, the wafer transfer device 33 provided in the processing station 3 located on the interface station 4 side can transfer the wafer W to a predetermined device in the first, second, and fourth blocks G1, G2, and G4. The wafer transfer device 33 provided in the processing station 3 located on the interface station 4 side can further transfer the wafer W to a predetermined device in the fifth block G5, which will be described later.

[0021] 2, for example, a plurality of wafer transfer devices 33 are arranged one above the other. One wafer transfer device 33 can transfer wafers W to a predetermined device located at the height of the upper layers 31 among the plurality of layers 31 stacked vertically. Another wafer transfer device 33 can transfer wafers W to a predetermined device located at the height of the plurality of layers 31 located below the above layers 31. A plurality of wafer transfer regions 32 are provided to enable such transfer of wafers W. Note that the number of wafer transfer devices 33 and the number of layers 31 corresponding to one wafer transfer device 33 can be selected arbitrarily, such as by providing a wafer transfer device 33 for each layer 31.

[0022] The wafer transfer area 32, the first block G1, or the second block G2 may also include a shuttle transfer device (not shown). The shuttle transfer device linearly transfers wafers W between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0023] The interface station 4 includes a fifth block G5 equipped with a plurality of transfer devices, and wafer transfer devices 41 and 42. The interface station 4 uses the wafer transfer device 41 or 42 to transfer the wafer W between the fifth block G5, where the wafer W is transferred by the wafer transfer device 33, and the exposure device. To this end, the wafer transfer devices 41 and 42 are each provided with a drive mechanism having movement paths in various directions, such as the horizontal direction (X direction, Y direction), the vertical direction (Z direction), and around the vertical axis (θ direction), as needed, or may be provided with a drive mechanism having movement paths in all directions. At least one of the wafer transfer devices 41 and 42 can support the wafer W and transfer the wafer W between the transfer device in the fifth block G5 and the exposure device.

[0024] A cleaning device for cleaning the surface of the wafer W and the aforementioned peripheral exposure device may be provided in the interface station 4 at a position accessible to either of the wafer transfer devices 41 and 42 .

[0025] As described above, the inspection device may be provided in the cassette station 2. The inspection device may also be provided in the processing station 3 and the interface station 4 at a position accessible by any of the transport arms (33, 41, 42 in FIG. 1 or 2) provided inside each station.

[0026] The wafer processing system 1 described above is provided with a control device 100. The control device 100 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of wafers W in the wafer processing system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the various processing devices and transport devices described above to perform wafer processing in the wafer processing system 1. The program may be recorded on a computer-readable storage medium H and installed into the control device 100 from the storage medium H. The storage medium H may include a ROM, RAM, or hard disk, but the structure and type are not limited and may be temporary or non-temporary. The control device 100 may include a unit for storing, reading, and executing the program for performing wafer processing and for performing related communications. Each unit may be located inside or outside the wafer processing system 1. The control device 100 may be one or more circuits, or may be provided as an integrated unit or as separate units.

[0027] <Operation of Wafer Processing System> The wafer processing system 1 is configured as described above. Next, an example of wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0028] First, a cassette C containing a plurality of wafers W is carried into the cassette station 2 of the wafer processing system 1 and placed on the cassette mounting table 21. Next, each wafer W in the cassette C is sequentially removed by the wafer transfer device 22 or 23 and transferred to the delivery device in the third block G3.

[0029] The wafer W transferred to the transfer device in the third block G3 is supported by the wafer transfer device 33 and transferred to a hydrophobization treatment device provided in the second block G2, where hydrophobization treatment is performed. The wafer W is then transferred by the wafer transfer device 33 to a resist film forming device (e.g., liquid processing device U1) where a resist film is formed on the wafer W, and then transferred to a heat treatment device where a pre-bake treatment is performed, and then transferred to the transfer device in the fifth block G5. When there are multiple processing stations 3 as shown in FIGS. 1 and 2 , the wafer W is temporarily placed in the transfer device in the fourth block G4 before being transferred to the transfer device in the fifth block G5, and then transferred between the multiple wafer transfer devices 33. If necessary, the wafer W may be transferred by the wafer transfer device 33 to a peripheral exposure device where the peripheral edge of the wafer is exposed.

[0030] The wafer W transferred to the delivery device in the fifth block G5 is transferred to the exposure device by wafer transfer devices 41 and 42, and is exposed to a predetermined pattern. The wafer W may be cleaned in a cleaning device before the exposure process.

[0031] The exposed wafer W is transferred to a transfer device in the fifth block G5 by the wafer transfer devices 41 and 42. Thereafter, the wafer W is transferred to a heat treatment device by the wafer transfer device 33 and subjected to post-exposure baking.

[0032] The wafer W that has been subjected to post-exposure baking is transferred by the wafer transfer device 33 to a developing treatment device and developed. After development is completed, the wafer W is transferred by the wafer transfer device 33 to a heat treatment device and subjected to post-baking.

[0033] Thereafter, the wafer W is transferred by the wafer transfer device 33 to the delivery device in the third block G3, and then transferred by the wafer transfer device 22 or 23 in the cassette station 2 to the cassette C on the predetermined cassette mounting table 21. In this way, a series of photolithography steps is completed.

[0034] It should be noted that the wafer processing system of the present disclosure is not limited to the configuration and operation described above. For example, in the above-described embodiment, the wafer processing system is directly connected to the exposure apparatus, and the wafer W is transferred between the interface station 4 and the exposure apparatus. However, the wafer processing system does not have to be directly connected to the exposure apparatus. In that case, for example, the wafer W is transferred from the cassette station 2 to the processing station 3, where it undergoes the necessary processing, and then transferred back to the cassette station 2 for removal from the system. Furthermore, unnecessary processing equipment listed above may not be provided in the wafer processing system, or processing may not be performed in that equipment.

[0035] <Substrate Processing Apparatus> Next, another configuration of the wafer processing system 1 will be described with reference to Fig. 3. The wafer processing system 1 is configured to perform predetermined processing on each of the main surfaces Wa, Wb of the wafer W. In the following description, the main surface that will become the upper surface in the substrate processing apparatus 300 will be referred to as the front surface Wa, and the main surface opposite the front surface that will become the lower surface in the substrate processing apparatus 300 will be referred to as the back surface Wb. Note that, by controlling the inversion device 200 described below, each of the upper and lower surfaces of the wafer W can become either the above-mentioned front surface Wa or the back surface Wb.

[0036] The wafer W processed in the wafer processing system 1 may be disk-shaped, may be a circle with a portion cut out, or may be a shape other than a circle, such as a rectangle or a polygon. In the following description, the wafer W is assumed to be rectangular. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or any other type of substrate. In the following description, the wafer W is assumed to be a mask substrate. For example, in the wafer processing system 1, a wafer W that has been subjected to a chemical cleaning process is transferred to the inversion device 200.

[0037] As shown in FIG. 3 , the wafer processing system 1 includes a reversing device 200 and a substrate processing apparatus 300. The reversing device 200 and the substrate processing apparatus 300 are arranged side by side in the Y-axis direction. The wafer W is adjusted in the reversing device 200 so that either of the main surfaces Wa or Wb faces up, and then transferred to the substrate processing apparatus 300. The wafer W transferred from the reversing device 200 is irradiated with energy rays in the substrate processing apparatus 300. The reversing device 200 and the substrate processing apparatus 300 are located, for example, at positions accessible by either of the wafer transfer devices 22 and 23 (see FIG. 1 ). The reversing device 200 and the substrate processing apparatus 300 may be located, for example, in the first block G1, the second block G2, and the interface station 4.

[0038] First, a description will be given of the configuration common to the reversing device 200 and the substrate processing device 300. The wafer processing system 1 (each of the reversing device 200 and the substrate processing device 300) includes a housing 10, a support unit 20, and a transfer unit 30. The support unit 20, which supports the wafer W, is transferred by the transfer unit 30, thereby moving within the housing 10 between the reversing device 200 and the substrate processing device 300.

[0039] In the wafer processing system 1, the housing 10 accommodates the components of the reversing device 200 and the components of the substrate processing apparatus 300 within the same space. That is, the processing of the wafer W by the reversing device 200 and the processing of the wafer W by the substrate processing apparatus 300 are both performed within the housing 10. Formed within the housing 10 are, for example, a reversing space RS that accommodates the components of the reversing device 200, an accommodation space AS that accommodates the components of the substrate processing apparatus 300, an exhaust space ES, and a transfer space TS that accommodates the transfer unit 30 below the reversing space RS and the accommodation space AS.

[0040] 3 and 4 , the support unit 20 includes a regulating member 121 and four support pieces 122. The regulating member 121 is a C-shaped frame body that is open on the side facing the inverting device 200. A wafer W can be placed in the space inside the regulating member 121. The regulating member 121 is plate-shaped and has a thickness in the Z-axis direction. An inner surface of the regulating member 121 faces a part of the side surface of the wafer W on the corner support surface 122a. The regulating member 121 has an end surface 121a that faces the first inner surface 10b. The regulating member 121 may be formed of a metal material such as stainless steel.

[0041] The four support pieces 122 are attached to the four corners of the inner edge of the regulating member 121. Each support piece 122 is generally L-shaped. Each support piece 122 is configured to support the underside of the wafer W. Each support piece 122 has a corner support surface 122a, which is its upper surface facing the wafer W, and a surface 122b opposite the corner support surface 122a (see FIG. 6). The rectangular wafer W is aligned by placing each corner of the wafer W on the corresponding corner support surface 122a of each support piece 122. The corner support surface 122a supports multiple corners of the wafer W. As a result, the area of ​​the back surface Wb of the wafer W other than the multiple corners is exposed toward the space on the second inner surface 10c side. The opposite surface 122b is spaced apart from the second inner surface 10c in the Y-axis direction. The four support pieces 122 may be made of a resin material such as PEEK (polyether ether ketone).

[0042] 3, the transport unit 30 includes a belt conveyor 131, an attachment unit 132, and a moving unit 133. The belt conveyor 131 extends on the bottom surface of the housing 10 from one end side (the side facing the inverting device 200, the negative side of the Y axis) to the other end side (the opposite side of the inverting device 200, the positive side of the Y axis). The attachment unit 132 is attached to a part of the belt conveyor 131 based on an operation signal from the control device 100, and is fixed to the moving unit 133. The moving unit 133 extends along the Z axis direction so as to connect the attachment unit 132 and the regulating member 121. The moving unit 133 is, for example, a rectangular parallelepiped member.

[0043] When the belt conveyor 131 is driven with the wafer W supported by the support members 20, the wafer W also moves horizontally along the belt conveyor 131. Details of the transportation of the support members 20 within the substrate processing apparatus 300 will be described later. The configuration of the transport unit 30 is not limited to the above-described form. The transport unit 30 may include a rail instead of the belt conveyor 131 and a slider movable along the rail, and the moving unit 133 may be fixed to the slider to move. The transport unit 30 may include a ball screw, a nut, and a slider instead of the belt conveyor 131, and the moving unit 133 may be fixed to the slider to move.

[0044] Next, each component of the reversing device 200 will be described. The reversing device 200 includes a lifting unit 220 and a reversing unit 250. The lifting unit 220 and the reversing unit 250 are housed in a reversing space RS. The above-described housing 10, support unit 20, and transport unit 30 may be part of the configuration of the reversing device 200.

[0045] The lifting unit 220 includes an actuator 221 and a plurality of lifting pins 222. The actuator 221 operates based on a control signal from the control device 100, and moves the plurality of lifting pins 222 up and down in the Z-axis direction. When the plurality of lifting pins 222 are raised, a wafer W can be placed on the tips of the plurality of lifting pins 222. The wafer W placed on the tips of the plurality of lifting pins 222 rises and falls in accordance with the up and down movement of the plurality of lifting pins 222.

[0046] The reversing unit 250 is configured to operate based on a control signal from the control device 100 and to clamp and invert the wafer W. The reversing unit 250 includes a pair of clamping members 252. The reversing unit 250 further includes, for example, a base, a clamping drive unit, and a reversing drive unit, all of which are not shown.

[0047] Each of the pair of clamping members 252 is connected to a base (not shown) extending along the Z-axis direction in a stationary state. Each of the pair of clamping members 252 is configured to be movable in the extending direction of the base. The clamping members 252 have, for example, a substantially cross shape, but the shape of the clamping members 252 is not particularly limited as long as they can clamp the wafer W.

[0048] Each corner of the clamping member 252 is provided with a protrusion 256 that protrudes toward the other clamping member 252. The wafer W is supported by the protrusions 256. The protrusions 256 may be made of a resin material such as PEEK (polyether ether ketone).

[0049] The clamping drive unit operates based on a control signal from the control device 100, and moves each of the pair of clamping members 252 relative to the base. The clamping drive unit can change the distance between the pair of clamping members 252, for example, between a clamping position where the wafer W is clamped and a release position where the wafer W is not clamped. The clamping drive unit may be, for example, a cylinder.

[0050] The inversion drive unit operates based on a control signal from the control device 100 and inverts the base around a rotation axis that intersects with the extending direction of the base. When the inversion drive unit operates with the wafer W sandwiched between the pair of sandwiching members 252, the wafer W is inverted upside down. That is, if the main surface Wa was the upper surface and the main surface Wb was the lower surface, the main surface Wa becomes the lower surface and the main surface Wb becomes the upper surface. The inversion drive unit may be, for example, a motor.

[0051] Next, each component of the substrate processing apparatus 300 will be described. The substrate processing apparatus 300 includes an irradiation unit 40, an exhaust unit 50, a partition wall 60, a spacer member 70 (an example of a spacer member), and at least one side spacer member (a first side wall 80 and a second side wall 90 in this embodiment). The above-described housing 10, support unit 20, and transport unit 30 may be part of the configuration of the substrate processing apparatus 300. In the substrate processing apparatus 300, the transport unit 30 transports the support unit 20 from a first position L1 to a second position L2 in a transport direction along the front surface Wa of the wafer W. The transport direction is, for example, the Y-axis direction. The second position L2 is located on the opposite side of the inversion device 200 in the Y-axis direction relative to the first position L1.

[0052] 3 to 5, the housing 10 is provided with a substrate loading opening 10a at the boundary between the reversing device 200 and the substrate processing apparatus 300 in the Y-axis direction. The substrate loading opening 10a is an opening through which the support unit 20 transported by the transport unit 30 can pass. In the Y-axis direction (an example of a transport direction), the position at which the substrate loading opening 10a is located is referred to as a first position L1. The substrate loading opening 10a opens in the Y-axis direction at the first position L1.

[0053] The housing 10 in the substrate processing apparatus 300 has a first inner surface 10b and a second inner surface 10c. The first inner surface 10b faces the front surface Wa of the wafer W (the upper surface of the wafer W in FIG. 3 ) at least at the second position L2. The first inner surface 10b is, for example, a top surface facing downward inside the housing 10. The second inner surface 10c faces the first inner surface 10b. The second inner surface 10c is, for example, a bottom surface facing upward inside the housing 10. The first inner surface 10b and the second inner surface 10c extend along the X-axis direction and the Y-axis direction, respectively. The housing 10 accommodates the support 20 between the first inner surface 10b and the second inner surface 10c.

[0054] Furthermore, the housing 10 of the substrate processing apparatus 300 has a sidewall loading port 10d formed in the sidewall at the first position L1 (see FIGS. 4 and 5). The sidewall loading port 10d opens, for example, on the negative side of the X-axis. The sidewall loading port 10d can be closed with a sealing member 10e (see FIGS. 4 and 5).

[0055] The irradiation unit 40 irradiates the front surface Wa of the wafer W with energy rays between the first position L1 and the second position L2. The front surface Wa of the wafer W irradiated with energy rays refers to, for example, the upper surface at the time of irradiation with the energy rays, and also includes a surface that was the lower surface (back surface Wb) but becomes the upper surface (front surface Wa) by the inversion device 200. This allows the irradiation unit 40 to irradiate both surfaces of the wafer W with energy rays, and both surfaces of the wafer W are cleaned. The irradiation unit 40 irradiates the upper surface of the wafer W with energy rays, as shown in FIG. 3 as an example of the front surface Wa. The position (area) where the irradiation unit 40 irradiates the energy rays may be referred to as an irradiation position L3. The irradiation unit 40 irradiates the energy rays downward. The energy rays irradiated by the irradiation unit 40 are, for example, light rays. The irradiation unit 40 irradiates the wafer W with, for example, ultraviolet light as light, to clean the wafer W. The irradiation unit 40 has a housing 141 and a light source 142. The housing 141 accommodates the light source 142 therein.

[0056] The light source 142 is configured to irradiate the main surfaces Wa, Wb of the wafer W with processing light for ashing organic matter adhering to the main surfaces Wa, Wb. The processing light may be, for example, ultraviolet light having a wavelength of approximately 10 nm to 300 nm. The light source 142 may be, for example, a straight tube type and may extend within the housing 141 so as to be parallel to the main surfaces Wa, Wb of the wafer W.

[0057] 3 to 5, the exhaust unit 50 exhausts gas from inside the housing 10 at an exhaust position LE that is further away from the first position L1 via a second position L2. The exhaust position LE is a position at the end of the housing 10 on the opposite side of the inversion device 200 in the Y-axis direction. The second position L2 is located between the first position L1 and the exhaust position LE. The exhaust unit 50 includes an exhaust wall 51, a plurality of exhaust ports 52, a plurality of exhaust pipes 53, and an exhaust device 54.

[0058] The exhaust wall 51 extends from the first inner surface 10b to the second inner surface 10c between the second position L2 and the exhaust position LE. The exhaust wall 51 is a plate-shaped member extending in the X-axis direction and the Z-axis direction. The exhaust space ES is a space on the reversing device 200 side of the exhaust wall 51 (the negative side of the Y-axis).

[0059] A plurality of exhaust ports 52 are formed between the first inner surface 10b and the second inner surface 10c of the exhaust wall 51. The exhaust ports 52 are aligned in the X-axis direction (an example of a width direction) perpendicular to the Y-axis direction (an example of a wafer W transfer direction) and the Z-axis direction (an example of a facing direction), and each open into the exhaust space ES. Each of the exhaust ports 52 is a hole penetrating the exhaust wall 51 in the Y-axis direction. The exhaust ports 52 are located between an opening 61 (described later) in the partition wall 60 and the second inner surface 10c in the Z-axis direction. The exhaust ports 52 are formed, for example, on the second inner surface 10c side in the Z-axis direction. The number of exhaust ports 52 is not limited to the number shown in FIGS. 5 and 6 and may be three or less, or five or more.

[0060] Each of the exhaust pipes 53 is connected to the exhaust wall 51 at the position of each of the exhaust ports 52. The interior of each of the exhaust pipes 53 is in communication with the exhaust space ES via each of the exhaust ports 52.

[0061] The exhaust device 54 is connected to the plurality of exhaust pipes 53 and exhausts gas from the exhaust space ES through the plurality of exhaust ports 52 and the plurality of exhaust pipes 53. The exhaust device 54 exhausts the gas exhausted from the inside of the housing 10 via the plurality of exhaust pipes 53 to the outside of the housing 10 and to exhaust pipes outside the exhaust device 54.

[0062] The partition wall 60 protrudes from the second inner surface 10c toward the first inner surface 10b between the second position L2 and the exhaust position LE. The partition wall 60 divides the interior of the housing 10 into an accommodation space AS for the support unit 20 and an exhaust space ES adjacent to the exhaust position LE. The partition wall 60 is, for example, a plate-shaped member extending along the X-axis and Z-axis directions. The partition wall 60 is located between the first inner surface 10b and the second inner surface 10c throughout the entire X-axis direction within the housing 10. An exhaust space ES is formed on the positive side of the partition wall 60 in the Y-axis direction. That is, the exhaust space ES is a space surrounded by the exhaust wall 51 of the exhaust unit 50, the partition wall 60, and the first and second inner surfaces 10b and 10c of the housing 10. The space from the substrate loading opening 10a to the partition wall 60 is the accommodation space AS.

[0063] An opening 61 is formed between the partition wall 60 and the first inner surface 10b. The opening 61 penetrates in the Y-axis direction. The storage space AS and the exhaust space ES are in communication with each other through the opening 61. The exhaust device 54 exhausts gas from the exhaust space ES, causing the gas from the storage space AS to flow out from the opening 61 into the exhaust space ES.

[0064] The opening 61 is formed, for example, between the first inner surface 10b and an end of the partition wall 60. Here, the end of the partition wall 60 is, for example, an end face 60a of the partition wall 60. The end of the partition wall 60 is located between the back surface Wb of the wafer W and the first inner surface 10b across the entire X-axis direction (an example of a width direction) perpendicular to the Y-axis direction (an example of a transfer direction of the wafer W) and the Z-axis direction (an example of an opposing direction) within the housing 10. The end face 60a, which is the end of the partition wall 60, is located between the back surface Wb of the wafer W and the front surface Wa of the wafer W. The end face 60a, which is the end of the partition wall 60, is located between the corner support surface 122a of the support portion 20 and the first inner surface 10b across the entire X-axis direction within the housing 10. The partition wall 60 is separated from the first inner surface 10b in the Z-axis direction.

[0065] The spacer member 70 extends along the opposite surface 122b at least at the second position L2 and protrudes from the second inner surface 10c toward the opposite surface 122b. The spacer member 70 extends from the first position L1 to the second position L2. The spacer member 70 is disposed in the accommodation space AS. As shown in FIGS. 3 and 6, the spacer member 70 is disposed, for example, below the area (the second inner surface 10c side) through which the support portion 20 can pass within the housing 10. The spacer member 70 is disposed, for example, adjacent to the negative side of the Y-axis of the partition wall 60. The spacer member 70 is disposed on the positive side of the X-axis of the moving portion 133. The spacer member 70 is, for example, a rectangular parallelepiped member extending along the X-axis, Y-axis, and Z-axis directions.

[0066] As shown in Fig. 6, the end surface 70a (top surface) of the spacer member 70 faces the opposite surface 122b of the support portion 20. The end surface 70a is spaced apart from the opposite surface 122b in the Z-axis direction. The end surface 70a extends along the X-axis direction and the Y-axis direction. Although not shown, the portion of the spacer member 70 on the substrate loading opening 10a side is spaced apart from the first inner surface 10b more than the portion of the spacer member 70 on the second position L2 side. As shown in Figs. 3 and 5, the spacer member 70 does not have to be provided, for example, around the substrate loading opening 10a.

[0067] The spacer member 70 includes a first box portion 71 and a second box portion 72 that are aligned along the Y-axis direction. The first box portion 71 is a part of the spacer member that faces the irradiation unit 40. The second box portion 72 is provided on the partition wall 60 side (positive side of the Y-axis) of the first box portion 71. The first box portion 71 is detachable from the second box portion 72 and the housing 10.

[0068] The substrate processing apparatus 300 includes at least one side spacer member that is arranged next to the support portion 20 in the X-axis direction, extends along the corner support surface 122a, and protrudes from the second inner surface 10c toward the first inner surface 10b in the Z-axis direction. In this embodiment, the substrate processing apparatus 300 includes a first side wall 80 and a second side wall 90 as the at least one side spacer member. The first side wall 80 is arranged next to the support portion 20 on the positive side of the X-axis, and the second side wall 90 is arranged next to the support portion 20 on the negative side of the X-axis. In the X-axis direction, the first side wall 80 and the second side wall 90 are arranged to sandwich at least the second box portion 72 of the spacer member 70 therebetween. In the example shown in FIGS. 4 to 6 , the first side wall 80 and the second side wall 90 are arranged to sandwich the first box portion 71 and the second box portion 72 of the spacer member 70 therebetween.

[0069] The end face 80a (top surface) of the first side wall 80 and the end face 90a (top surface) of the second side wall 90 face the first inner surface 10b. The end face 80a of the first side wall 80 and the end face 90a of the second side wall 90 are located, for example, between the back surface Wb of the wafer W and the first inner surface 10b within the housing 10. The end face 80a of the first side wall 80 and the end face 90a of the second side wall 90 are located between the back surface Wb of the wafer W and the front surface Wa of the wafer W. The end face 80a of the first side wall 80 and the end face 90a of the second side wall 90 are located, for example, between the corner support surface 122a of the support portion 20 and the first inner surface 10b within the housing 10.

[0070] The first side wall 80 extends along the first inner surface 10b from the irradiation unit 40 to the second position L2 in the Y-axis direction and protrudes from the second inner surface 10c toward the first inner surface 10b. The first side wall 80 is disposed in the accommodation space AS. The first side wall 80 is disposed, for example, adjacent to the partition wall 60 on the negative side of the Y-axis. As shown in FIGS. 4 to 6, the first side wall 80 is disposed, for example, within the housing 10, on the positive side of the X-axis of the first box portion 71 and the second box portion 72 of the spacer member 70. The first side wall 80 is, for example, a rectangular parallelepiped member extending along the X-axis, Y-axis, and Z-axis directions.

[0071] As shown in Fig. 6, the end surface 80a (top surface) of the first side wall 80 faces the first inner surface 10b of the housing 10. The end surface 80a is, for example, spaced apart from the first inner surface 10b in the Z-axis direction. The end surface 80a extends along the X-axis direction and the Y-axis direction. Although not shown, the portion of the first side wall 80 on the substrate loading opening 10a side is spaced apart from the first inner surface 10b more than the portion of the first side wall 80 on the second position L2 side. As shown in Figs. 3 and 5, the first side wall 80 does not have to be provided, for example, around the substrate loading opening 10a.

[0072] The second side wall 90 extends along the first inner surface 10b from the irradiation unit 40 to the second position L2 in the Y-axis direction and protrudes from the second inner surface 10c toward the first inner surface 10b. The second side wall 90 is disposed in the storage space AS. The second side wall 90 is disposed, for example, adjacent to the partition wall 60 on the negative side of the Y-axis. As shown in FIGS. 4 to 6, the second side wall 90 is disposed, for example, within the housing 10, away from the first box portion 71 and the second box portion 72 of the spacer member 70 on the negative side of the X-axis. Therefore, the moving unit 133 protrudes from the second inner surface 10c toward the first inner surface 10b through a gap between the spacer member 70 and the second side wall 90 (an example of a side spacer member) and supports the support unit 20. The moving unit 133 can move in the Y-axis direction between the first spacer member and the second side wall 90.

[0073] The second side wall 90 has a stepped cross section when viewed from the Y-axis direction. As shown in FIG. 6 , the second side wall 90 includes a first portion 91 that protrudes from the second inner surface 10c toward the opposite surface 122b, and a second portion 92 that protrudes from the second inner surface 10c toward the first inner surface 10b. As shown in FIG. 6 , the first portion 91 is disposed, for example, below the area (toward the second inner surface 10c) within the housing 10 through which the support unit 20 can pass. An end surface 91a of the first portion 91 faces the lower surface of the regulating member 121 of the support unit 20. The end surface 91a is spaced apart from the regulating member 121 in the Z-axis direction, for example. The end surface 91a extends along the X-axis direction and the Y-axis direction.

[0074] The second portion 92 is disposed, for example, inside the housing 10, to the side (the negative side of the X-axis) of the area through which the support portion 20 can pass. An end face 92a of the second portion 92 faces the first inner surface 10b. The end face 92a is separated from the first inner surface 10b in the Z-axis direction, for example. The end face 92a extends along the X-axis direction and the Y-axis direction.

[0075] Although not shown, the portion of the second side wall 90 on the substrate loading opening 10a side is farther from the first inner surface 10b than the portion of the second side wall 90 on the second position L2 side. As shown in Fig. 5, the second side wall 90 does not have to be provided around the substrate loading opening 10a, for example.

[0076] The second side wall 90 includes a third box portion 93 and a fourth box portion 94 that are aligned along the Y-axis direction. The third box portion 93 is a part of the second side wall 90 that faces the irradiation unit 40. The fourth box portion 94 is provided on the partition wall 60 side (positive side of the Y-axis) of the third box portion 93. The third box portion 93 is detachable from the fourth box portion 94 and the housing 10.

[0077] Here, the positions and distances of the components of the substrate processing apparatus 300 will be described in detail. As shown in FIG. 3 , in a first region LA adjacent to the substrate loading entrance 10a, at least one side spacer member of the spacer member 70 is farther from the first inner surface 10b than in a second region LB between the first region LA and the partition wall 60. The first region LA may include, for example, at least a portion of the first position L1. The second region LB may include, for example, the irradiation position L3. The portions of the spacer member 70 and the first side wall 80 (second side wall 90) on the substrate loading entrance 10a side are farther from the first inner surface 10b than the portions of the spacer member 70 and the first side wall 80 (second side wall 90) on the second position L2 side. The distance D1 between the end faces of each part of the spacer member 70 and the first side wall 80 (second side wall 90) on the substrate loading entrance 10a side and the first inner surface 10b is greater than the distance D2 between the end faces of each part of the spacer member 70 and the first side wall 80 (second side wall 90) on the second position L2 side and the first inner surface 10b.

[0078] 7 , in the Z-axis direction, the distance D27 between the end face 70a of the spacer member 70 and the opposite face 122b of the support portion 20 is equal to or greater than the distance DW1 between the front surface Wa of the wafer W and the first inner face 10b. Furthermore, in the Z-axis direction, the distance D27 between the end face 70a of the spacer member 70 and the opposite face 122b of the support portion 20 is equal to or greater than the distance D16 between the end face 60a of the partition wall 60 and the first inner face 10b. Furthermore, in the Z-axis direction, the distance D27 between the end face 70a of the spacer member 70 and the opposite face 122b of the support portion 20 is equal to or less than the distance D12a between the end face 121a of the support portion 20 and the first inner face 10b. Note that, in the Z-axis direction, the distance D27 between the end face 70a of the spacer member 70 and the opposite face 122b of the support portion 20 may be greater than the distance D12a between the end face 121a of the support portion 20 and the first inner face 10b.

[0079] In the Z-axis direction, the end face 60a of the partition wall 60 is located between the end face 80a of the first side wall 80 (an example of a side spacer member) and the first inner surface 10b. That is, the distance D16 between the end face 60a of the partition wall 60 and the first inner surface 10b is equal to or less than the distance D18 between the end face 80a of the first side wall 80 (an example of a side spacer member) and the first inner surface 10b. The distance D16 between the end face 60a of the partition wall 60 and the first inner surface 10b is equal to or less than the distance D17 between the end face 70a of the spacer member 70 and the first inner surface 10b.

[0080] An end face 80a of the first side wall 80 (an example of a side spacer member) is located between the front surface Wa of the wafer W and the corner support surface 122a of the support part 20. That is, in the Z-axis direction, a distance D18 between the end face 80a of the first side wall 80 and the first inner surface 10b is equal to or greater than the distance DW1 between the front surface Wa of the wafer W and the first inner surface 10b, and is equal to or less than the distance D12b between the corner support surface 122a of the support part 20 and the first inner surface 10b.

[0081] <Substrate Processing Method> Next, a method for processing a wafer W will be described with reference to Fig. 3, Fig. 5, and Fig. 8. Hereinafter, a case will be described in which the wafer W is inverted in the inversion device 200 and then transferred from the inversion device 200 to the substrate processing apparatus 300. A conventional technique may be used as a method for inverting the wafer W in the inversion device 200.

[0082] First, the control device 100 exhausts gas from the exhaust space ES using the exhaust unit 50. Because the opening 61 is formed between the end face 60a of the partition wall 60 and the first inner surface 10b, the exhaust unit 50 can exhaust gas from the exhaust space ES, thereby allowing gas from the accommodation space AS to flow out from the opening 61 into the exhaust space ES. Note that the substrate processing apparatus 300 introduces atmospheric air into the accommodation space AS from the outside or a compressor (not shown) or the like through the substrate carry-in port 10a. This creates an atmospheric atmosphere in the accommodation space AS.

[0083] Next, the irradiation unit 40 irradiates the target object with energy rays between the first position L1 and the second position L2. The energy rays may be, for example, ultraviolet rays.

[0084] Next, the transfer unit 30 loads the wafer W into the accommodation space AS through the substrate loading port 10a. The transfer unit 30 transfers the wafer W to a first position L1. The transfer unit 30 transfers the wafer W in the Y-axis direction in accordance with the irradiation of the energy beam by the irradiation unit 40. The transfer unit 30 transfers the wafer W to a second position L2 where the wafer W is not irradiated with the energy beam. When ultraviolet rays, which are an example of energy beams, are irradiated in the air, ozone (O ３ ) is generated, and ozone flows from the irradiation position L3 toward the second position L2 by the exhaust unit 50. As a result, the wafer W transported to the second position L2 is exposed to ozone, and cleaning progresses further. Next, the transport unit 30 transports the wafer W from the second position L2, passing through the irradiation position L3 and the first position L1, to the substrate loading port 10a so as to retreat from the accommodation space AS while irradiating the wafer W with energy rays. This allows the front surface Wa of the wafer W to be further irradiated with energy rays. In this manner, the cleaning process is performed on the front surface Wa of the wafer W.

[0085] Next, the irradiation unit 40 stops irradiating the energy beam. The transfer unit 30 transfers the wafer W from the second position L2 to the inversion device 200 via the substrate loading port 10a. The inversion device 200 inverts the wafer W to reverse the front and back sides of the wafer W. Next, the transfer unit 30 loads the wafer W into the substrate processing apparatus 300, as described above, whereby the cleaning process is performed on the front side Wa (back side) of the wafer W.

[0086] <Function> Incidentally, one possible cleaning method for cleaning the front surface of the wafer W before performing a resist or other process is to irradiate the wafer W with energy rays such as ultraviolet rays using an irradiation unit such as a UV lamp. Hereinafter, such energy rays will be referred to as ultraviolet rays. In this case, before performing this cleaning method, a chemical cleaning process using a chemical solution or the like may be performed on the front surface Wa (back surface Wb) of the wafer W. After performing this chemical cleaning process, SO ４ There is a possibility that ions such as sulfur ions remain.

[0087] Depending on the energy ray (e.g., ultraviolet light) used in the cleaning method, oxygen (O ２ ) and other gases, such as ozone (O ３ ) or other gases. Hereinafter, this transformed gas will be referred to as ozone. If ozone remains on the main surfaces Wa, Wb of the wafer W or in the accommodation space AS facing the main surfaces Wa, Wb, the ozone may react with ions remaining on the surface Wa of the wafer W. In this way, if ozone remains (flows) at a uniform concentration in the accommodation space AS, ions remaining on the surface Wa of the wafer W can be uniformly removed.

[0088] However, if ozone remains (flows) unevenly in the accommodation space AS, there is a possibility that the ozone will react excessively with ions remaining on parts of the main surfaces Wa, Wb of the wafer W, depending on the amount of ultraviolet light irradiation and the exposure time of the ozone. In this case, the change pattern of the main surfaces Wa, Wb of the wafer W may differ from part to part. Such change refers to, for example, film loss or peeling on the main surfaces Wa, Wb of the wafer W. For this reason, it is necessary to properly exhaust gas within the housing that is provided with an irradiation unit and that accommodates the wafer W.

[0089] Even in conventional substrate processing apparatuses, although the inside of a housing forming the accommodation space to be irradiated with energy rays is evacuated by an exhaust device, there is a possibility that the gas on the surface Wa of the wafer W cannot be uniformly exhausted. In this way, if there is a bias in the gas distribution in the accommodation space, there is a possibility that abnormalities will occur in a biased area on the surface of the wafer W. For this reason, there is a demand for exhausting the gas in the accommodation space as uniformly as possible.

[0090] In contrast, in the substrate processing apparatus 300 according to the above example, the end surface 60a of the partition wall 60 is located between the back surface Wb of the wafer W supported by the support member 20 and the first inner surface 10b. This allows ozone to be concentrated on the first inner surface 10b, i.e., the front surface Wa of the wafer W. The partition wall 60 is formed between the second position to which the wafer W can be transferred and the exhaust position LE where the exhaust unit 50 is provided. The partition wall 60 forms an opening 61 between the partition wall 60 and the first inner surface 10b of the housing 10. For example, the exhaust unit 50 exhausts gas from the exhaust space ES and allows gas from the accommodation space AS to flow into the exhaust space ES through the opening 61. Compared to an airflow directed toward the exhaust unit 50 throughout the entire space between the first inner surface 10b and the second inner surface 10c without the partition wall 60, the opening 61 of the partition wall 60 can improve the uniformity of the airflow in the accommodation space AS over the front surface Wa of the wafer W. Furthermore, by providing the partition wall 60 between the accommodation space AS and the exhaust unit 50, a portion of the accommodation space AS in the vertical direction is closed. As a result, the presence of the partition wall 60 increases the residence time of ozone in the accommodation space AS compared to when the partition wall 60 is not provided. This increases the time that the wafer W is exposed to ozone in the accommodation space AS. As a result, the wafer W can be properly cleaned and unevenness in the amount of gas exhausted in the accommodation space AS can be suppressed.

[0091] According to the above example, the end face 60a (an example of an end) of the partition wall 60 is located between the back surface Wb of the wafer W and the first inner surface 10b across the entire area in the X-axis direction within the housing 10. In this case, the opening 61 extends across the entire area in the X-axis direction, thereby improving the uniformity of the airflow in the X-axis direction. Furthermore, the distance between the first inner surface 10b and the end face 60a of the partition wall 60 in the facing direction (Z-axis direction) is sufficiently narrow, so that even if the space between the front surface Wa of the wafer W and the first inner surface 10b is narrow, gas in the space around the front surface Wa of the wafer W can be appropriately exhausted.

[0092] According to the above example, the exhaust unit 50 exhausts gas from the exhaust space ES through a plurality of exhaust ports 52 that are aligned in the X-axis direction and each open into the exhaust space ES. In this case, since the plurality of exhaust ports 52 are aligned in the X-axis direction, the exhaust unit 50 can uniformly exhaust gas in the X-axis direction. Therefore, the substrate processing apparatus 300 can suppress uneven distribution of gas in the X-axis direction on the front surface Wa of the wafer W.

[0093] In the above example, the multiple exhaust ports 52 are located between the opening 61 and the second inner surface 10 c in the Z-axis direction. In this case, the gas drawn in from the accommodation space AS passes through the exhaust space ES toward the second inner surface 10 c. Therefore, the multiple exhaust ports 52 are less likely to be positioned unevenly than when the multiple exhaust ports 52 are located in the same position as the opening 61.

[0094] According to the above example, in the Z-axis direction, the end face 60a (an example of an end) of the partition wall 60 is located between the back surface Wb of the wafer W and the front surface Wa of the wafer W. In this case, the distance DW1 between the front surface Wa of the wafer W and the first inner surface 10b is smaller than the distance D16 between the end face 60a of the partition wall 60 and the first inner surface 10b. This improves the uniformity of the flow velocity of the gas located between the front surface Wa of the wafer W and the first inner surface 10b.

[0095] According to the above example, the support part 20 has a corner support surface 122a facing the wafer W and an opposite surface 122b of the corner support surface 122a, and the opposite surface 122b is spaced apart from the second inner surface 10c. In this case, the distance between the irradiation part 40 and the second inner surface 10c can be increased to ensure ease of maintenance of the light source 142 of the irradiation part 40. Furthermore, by bringing the wafer W closer to the first inner surface 10b, when the support part 20 is located at least at the irradiation position L3 of the irradiation part 40, it is possible to reduce the possibility of ozone flowing into spaces other than the space above the surface Wa.

[0096] According to the above example, the spacer member 70 extends along the opposite surface 122b at least at the second position L2 and protrudes from the second inner surface 10c toward the opposite surface 122b, with the end surface 70a facing the opposite surface 122b being spaced apart from the opposite surface 122b. Thus, by disposing the spacer member 70 in the space on the back surface Wb side of the wafer W, the possibility of gas stagnation in the space is reduced. In the space on the back surface Wb side of the wafer W, the distance in the Z-axis direction between the first inner surface 10b and the structure facing the first inner surface 10b is shortened, thereby increasing pressure loss in the space. This reduces the possibility of ozone generated at the irradiation position L3 flowing into the space on the back surface Wb side of the wafer W. By reducing the space at the second position L2 by the spacer member 70, the diffusion of ozone in the space can be prevented, thereby increasing the amount of ozone exposed to the wafer W.

[0097] According to the above example, in the Z-axis direction, the distance D27 between the end face 70a of the spacer member 70 and the opposite face 122b of the support portion 20 is equal to or greater than the distance DW1 between the front surface Wa of the wafer W and the first inner surface 10b. Furthermore, in the Z-axis direction, the distance D27 between the end face 70a of the spacer member 70 and the opposite face 122b of the support portion 20 is equal to or greater than the distance D16 between the end face 60a of the partition wall 60 and the first inner surface 10b. Furthermore, in the Z-axis direction, the distance D27 between the end face 70a of the spacer member 70 and the opposite face 122b of the support portion 20 is equal to or less than the distance between the end face 121a and the first inner surface 10b. In these cases, by setting the distance D27 to be approximately the same as the distance between each component of the support portion 20 or the wafer W and the first inner surface 10b, airflows toward the exhaust unit 50 can be appropriately formed in the space on the front surface Wa side and the space on the back surface Wb side of the wafer W. In this case, it is possible to prevent unevenness in the degree of airflow velocity between the space on the front surface Wa side and the space on the back surface Wb side of the wafer W. Therefore, air can be uniformly exhausted from the accommodation space AS toward the exhaust space ES. Furthermore, by having the substrate processing apparatus 300 have any of the above-described configurations, it is possible to appropriately retain ozone within the accommodation space AS, thereby appropriately exposing the wafer W to ozone.

[0098] According to the above example, the first sidewall 80 and the second sidewall 90 are arranged side by side on the support portion 20 as at least one side spacer member, and extend along the corner support surface 122a of the support portion 20. In this case, by arranging the first sidewall 80 and the second sidewall 90 in the space on the sides of the wafer W (on both sides in the X-axis direction), the possibility of gas stagnation in the space is reduced. In the space on the sides of the wafer W, by arranging the spacer member 70 in the space on the back surface Wb side of the wafer W, the possibility of gas stagnation in the space is reduced. In the space on the back surface Wb side of the wafer W, the distance in the Z-axis direction between the first inner surface 10b and the structure facing the first inner surface 10b is shortened, thereby increasing pressure loss in the space. This reduces the possibility of ozone generated at the irradiation position flowing into the space on the back surface Wb side of the wafer W.

[0099] According to the above example, in the Z-axis direction, the end face 60a of the partition wall 60 is located between the end face 80a of the first side wall 80 and the end face 90a of the second side wall 90 and the first inner surface 10b. In this case, ozone is prevented from flowing into the space to the side of the support part 20 in the X-axis direction.

[0100] According to the above example, in the Z-axis direction, the end surface 80a of the first side wall 80 and the end surface 90a of the second side wall 90 are located between the front surface Wa of the wafer W and the corner support surface 122a of the support part 20. In this case, the distance D18 is set to be approximately the same as the distance between each component of the support part 20 or the wafer W and the first inner surface 10b. This improves the uniformity of the airflow in the spaces near the first side wall 80 and the second side wall 90 located to the sides of the wafer W in the X-axis direction, and in the space at the center of the spacer member 70.

[0101] According to the above example, the first side wall 80 and the second side wall 90 extend from the first position L1 to the second position L2. In this case, even in the region between the first position L1 and the second position L2, which includes the energy beam irradiation position L3 of the irradiation unit 40, the first side wall 80 and the second side wall 90 are arranged in the space on the sides of the wafer W (on both sides in the X-axis direction), thereby suppressing the possibility of gas remaining in the space.

[0102] According to the above example, the first box portion 71, which is a part of the spacer member 70 facing the irradiation unit 40, is detachable. Furthermore, the third box portion 93, which is a part of the second side wall 90 facing the irradiation unit 40, is detachable. In these cases, for example, when inspecting the irradiation unit 40, a jig may be inserted into the housing 10 toward the light source 142 of the irradiation unit 40. In this case, by removing the sealing member 10e of the housing 10, the storage space AS of the housing 10 communicates with the external space through the side wall carry-in opening 10d. The first box portion 71 of the spacer member 70 and the third box portion 93 of the second side wall 90 can then be pulled out through the side wall carry-in opening 10d. As a result, as shown in FIG. 8 , the spacer member can be removed in the irradiation space within the housing 10, which is the space illuminated by the light source 142 of the irradiation unit 40. In this case, a worker can insert a jig into the housing 10 toward the light source 142. In this way, the first box part 71 and the third box part 93 are configured to be detachable, so that the maintainability of the substrate processing apparatus 300 can be improved.

[0103] According to the above example, the portions of the spacer member 70, the first side wall 80, and the second side wall 90 on the substrate loading opening 10a side are farther from the first inner surface 10b than the portions of the spacer member 70, the first side wall 80, and the second side wall 90 on the second position L2 side. In this case, the substrate loading opening 10a is widened, allowing the transfer unit 30 to smoothly transfer the wafer W. Airflow from the inverting device 200 side can be properly introduced through the substrate loading opening 10a without stagnation, allowing the cleaning process to proceed properly.

[0104] 9A, if the partition walls and spacer members are not provided, the film thickness distribution will be biased in the Y-axis direction on the front surface Wa of the wafer W. For example, on the positive side of the X-axis on the front surface Wa of the wafer W, the film thickness will be thin at the end portions on the positive side and the negative side of the Y-axis, whereas the film thickness will be thick in the central portion on the positive side of the Y-axis.

[0105] On the other hand, when the partition wall and spacer member are provided, as shown in FIG. 9B , the unevenness of the film thickness distribution in the Y-axis direction on the surface Wa of the wafer W is reduced (eliminated). That is, on the positive side of the X-axis of the surface Wa of the wafer W, no difference in film thickness is observed between the ends on the positive and negative sides of the Y-axis and the center on the positive side of the Y-axis. If the unevenness of the gas velocity distribution in the accommodation space AS is large, the difference (unevenness) in film thickness in each region of the wafer W increases. If the film thickness is too thick, abnormalities such as peeling occur. In this way, the partition wall 60, spacer member 70, first sidewall 80, and second sidewall 90 can suppress unevenness in the amount of gas exhausted in the accommodation space AS of the wafer W, maintain a thin film thickness, and suppress abnormalities on the surface Wa of the wafer W. The unevenness of the film thickness in the X-axis direction can be reduced (eliminated) by adjusting the fixed angle of the support unit 20 relative to the moving unit 133, etc.

[0106] [Modifications] Although the embodiments according to the present disclosure have been described in detail above, various modifications may be made to the above-described embodiments without departing from the scope and spirit of the claims.

[0107] In the above example, the spacer member 70 has a rectangular parallelepiped shape, but there is no limitation to the shape of the spacer member 70. For example, a wafer processing system 1A and a substrate processing apparatus 300A according to a modified example shown in FIG. 10 include a spacer member 70A.

[0108] The spacer member 70A has a stepped cross section when viewed from the Y-axis direction. The spacer member 70A includes a first spacer portion 75 that protrudes from the second inner surface 10c toward the opposite surface 122b, and a second spacer portion 76 that protrudes from the second inner surface 10c toward the first inner surface 10b. The first spacer portion 75 is disposed, for example, below (on the side of the second inner surface 10c) an area within the housing 10 through which the support portion 20 can pass. An end surface 75a of the first spacer portion 75 faces the lower surface of the regulating member 121 of the support portion 20. The end surface 75a is spaced apart from the regulating member 121 in the Z-axis direction, for example. The end surface 75a extends along the X-axis direction and the Y-axis direction.

[0109] The second spacer portion 76 is disposed, for example, inside the housing 10, to the side (positive side of the X-axis) of an area through which the support portion 20 can pass. An end face 76a of the second spacer portion 76 faces the first inner surface 10b. The end face 76a is spaced apart from the first inner surface 10b in the Z-axis direction, for example. The end face 76a extends along the X-axis direction and the Y-axis direction.

[0110] In the wafer processing system 1A and substrate processing apparatus 300A having such a configuration, the spacer member 70A is arranged to occupy the space around the wafer W passing through, thereby increasing the flow rate of gas around the wafer W and enabling the gas to be exhausted efficiently.

[0111] The gist of the present disclosure is as follows [1] to

[20] .

[0112] a housing having a first inner surface facing the surface of the substrate at least at the second position and a second inner surface facing the first inner surface, the housing containing the support part between the first inner surface and the second inner surface; an exhaust part exhausting gas from the housing at an exhaust position further away from the first position via the second position; and a partition wall between the second position and the exhaust position, the partition wall protruding from the second inner surface toward the first inner surface and having an opening formed between the second inner surface and the first inner surface, wherein an end of the partition wall is located between a rear surface of the substrate supported by the support part and the first inner surface in the opposing direction of the first inner surface and the second inner surface.

[0113] [2] The substrate processing apparatus according to [1] above, wherein the end of the partition wall is located between the rear surface of the substrate and the first inner surface across the entire width of the housing perpendicular to the transport direction and the opposing direction.

[0114] [3] The substrate processing apparatus according to [1] or [2] above, wherein the partition wall separates the inside of the housing into an accommodation space for the support part and an exhaust space adjacent to the exhaust position, and the exhaust part exhausts gas from the exhaust space and causes the gas from the accommodation space to flow out into the exhaust space from the opening.

[0115] [4] The substrate processing apparatus according to [3], wherein the exhaust unit exhausts gas from the exhaust space through a plurality of exhaust ports that are arranged in a width direction perpendicular to the transport direction and the facing direction and each of which opens into the exhaust space.

[0116] [5] The substrate processing apparatus according to [4], wherein the plurality of exhaust ports are located between the opening and the second inner surface in the facing direction.

[0117] [6] The substrate processing apparatus according to any one of [1] to [5] above, wherein an end of the partition wall is located between the rear surface of the substrate and the front surface of the substrate in the opposing direction.

[0118] [7] The substrate processing apparatus according to any one of [1] to [6] above, wherein the support portion has a support surface facing the substrate and an opposite surface to the support surface, and the opposite surface is spaced apart from the second inner surface.

[0119] [8] The substrate processing apparatus according to [7] above, further comprising a spacer member extending along the opposite surface at least at the second position, protruding from the second inner surface toward the opposite surface, and having an end face facing the opposite surface that is spaced apart from the opposite surface.

[0120] [9] The substrate processing apparatus according to [8], wherein the distance between the end surface and the opposite surface of the spacer member in the opposing direction is equal to or greater than the distance between the surface of the substrate and the first inner surface.

[0121]

[10] The substrate processing apparatus according to [8] or [9], wherein in the opposing direction, the distance between the end surface and the opposite surface of the spacer member is equal to or greater than the distance between the end of the partition wall and the first inner surface.

[0122]

[11] The substrate processing apparatus according to any one of [8] to

[10] above, wherein the support portion has a regulating member that protrudes from the opposite surface toward the first inner surface and faces a part of a side surface of the substrate on the support surface, the regulating member has a holding surface that faces the first inner surface, and in the facing direction, the distance between the end surface of the spacer member and the opposite surface is equal to or less than the distance between an end of the regulating member and the first inner surface.

[0123]

[12] The substrate processing apparatus according to any one of [1] to

[11] above, further comprising at least one side spacer member arranged alongside the support section in a width direction perpendicular to the transport direction and the facing direction, extending along a support surface of the support section facing the substrate, protruding from the second inner surface towards the first inner surface in the facing direction, and having an end surface facing the first inner surface located between the support surface and the first inner surface.

[0124]

[13] The substrate processing apparatus according to

[12] , wherein an end of the partition wall is located between the end face of the at least one side spacer member and the first inner surface in the opposing direction.

[0125]

[14] The substrate processing apparatus according to

[12] or

[13] , wherein the end surface of the at least one side spacer member is located between the surface of the substrate and the support surface in the facing direction.

[0126]

[15] The substrate processing apparatus according to any one of

[12] to

[14] , wherein the at least one side spacer member extends from the first position to the second position in the transport direction.

[0127]

[16] The substrate processing apparatus according to any one of [8] to

[11] above, wherein a part of the spacer member facing the irradiation unit in the transport direction is detachable.

[0128]

[17] The substrate processing apparatus according to any one of [8] to

[11] above, further comprising at least one side spacer member arranged alongside the support section in a width direction perpendicular to the transport direction and the facing direction, extending along the support surface, protruding from the second inner surface towards the first inner surface in the facing direction, with an end face facing the first inner surface located between the support surface and the first inner surface, wherein the housing has a substrate loading entrance that is open in the transport direction at the first position, and in a first region close to the substrate loading entrance, the spacer member and the at least one side spacer member are farther away from the first inner surface than in a second region between the first region and the second position.

[0129]

[18] The substrate processing apparatus according to any one of [1] to

[17] above, wherein the substrate has a rectangular shape and a plurality of corners, and the support portion has a plurality of corner support surfaces facing the substrate and supporting the plurality of corners of the substrate.

[0130]

[19] The substrate processing apparatus according to any one of [1] to

[18] above, wherein the irradiation unit irradiates the substrate with ultraviolet rays as the energy rays in an air atmosphere to clean the substrate.

[0131]

[20] The substrate processing apparatus according to any one of items [8] to

[11] above, further comprising: side spacer members arranged alongside the support parts in a width direction perpendicular to the transport direction and the opposing direction, extending along the support surfaces, and protruding from the second inner surface toward the first inner surface in the opposing direction, with end surfaces facing the first inner surface located between the support surfaces and the first inner surface, wherein the spacer members and the side spacer members are spaced apart in the width direction, and the transport part has a moving part that protrudes from the second inner surface toward the first inner surface between the spacer members and the side spacer members and supports the support parts, and moves the moving part to move the support parts.

[0132] 1, 1A... wafer processing system, 10... housing, 10a... substrate entrance, 10b... first inner surface, 10c... second inner surface, 20... support section, 30... transport section, 40... irradiation section, 50... exhaust section, 52... exhaust port, 60... partition wall, 60a... end surface (an example of an end), 61... opening, 70... spacer member (an example of a spacer member), 70a, 80a, 90a... end surface (upper surface), 70A... spacer member, 75a, 76a, 91a, 9 2a, 121a...end surface, 121...regulating member, 122a...corner support surface, 122b...opposite surface (see Figure 6), 133...moving part, 300, 300A...substrate processing apparatus, AS...accommodation space, D1, D2, D12a, D12b, D16, D17, D18, D27, DW1...distance, ES...exhaust space, L1...first position, L2...second position, LE...exhaust position, W...wafer (an example of a substrate), Wa...front surface, Wb...back surface.

Claims

1. A substrate processing apparatus comprising: a support part that supports a substrate; a transport part that transports the support part from a first position to a second position in a transport direction along the surface of the substrate; an irradiation part that irradiates the surface of the substrate with an energy beam between the first position and the second position; a housing that houses the support part between the first inner surface and the second inner surface, the housing having a first inner surface that faces the surface of the substrate at least at the second position and a second inner surface that faces the first inner surface; an exhaust part that exhausts gas from inside the housing at an exhaust position further away from the first position via the second position; and a partition wall that protrudes from the second inner surface toward the first inner surface between the second position and the exhaust position, and has an opening between it and the first inner surface, wherein an end of the partition wall is located between the back surface of the substrate supported by the support part and the first inner surface in the opposing direction of the first inner surface and the second inner surface.

2. A substrate processing apparatus as described in claim 1, wherein the end of the partition wall is located between the rear surface of the substrate and the first inner surface across the entire width of the housing perpendicular to the transport direction and the opposing direction.

3. A substrate processing apparatus as described in claim 1 or 2, wherein the partition wall divides the inside of the housing into an accommodation space for the support part and an exhaust space adjacent to the exhaust position, and the exhaust part exhausts gas from the exhaust space and causes the gas from the accommodation space to flow out into the exhaust space through the opening.

4. A substrate processing apparatus as described in claim 3, wherein the exhaust section exhausts gas from the exhaust space through a plurality of exhaust ports arranged in a width direction perpendicular to the transport direction and the opposing direction, each of which opens into the exhaust space.

5. The substrate processing apparatus according to claim 4, wherein the plurality of exhaust ports are located between the opening and the second inner surface in the opposing direction.

6. The substrate processing apparatus according to claim 1 or 2, wherein the end of the partition wall is located between the rear surface and the front surface of the substrate in the opposing direction.

7. The substrate processing apparatus according to claim 1 or 2, wherein the support portion has a support surface facing the substrate and an opposite surface to the support surface, the opposite surface being spaced apart from the second inner surface.

8. The substrate processing apparatus according to claim 7, further comprising a spacer member extending along the opposite surface at least at the second position, protruding from the second inner surface toward the opposite surface, and having an end surface facing the opposite surface that is spaced apart from the opposite surface.

9. The substrate processing apparatus according to claim 8, wherein the distance between the end face and the opposite face of the spacer member in the facing direction is equal to or greater than the distance between the surface of the substrate and the first inner face.

10. The substrate processing apparatus according to claim 8, wherein the distance between the end surface and the opposite surface of the spacer member in the opposing direction is equal to or greater than the distance between the end of the partition wall and the first inner surface.

11. A substrate processing apparatus as described in claim 8, wherein the support portion has a regulating member that protrudes from the opposite surface toward the first inner surface and faces a portion of the side surface of the substrate on the support surface, and in the facing direction, the distance between the end face of the spacer member and the opposite surface is less than the distance between the end of the regulating member and the first inner surface.

12. A substrate processing apparatus as described in claim 8, further comprising at least one side spacer member arranged alongside the support section in a width direction perpendicular to the transport direction and the facing direction, extending along the support surface of the support section facing the substrate, protruding from the second inner surface toward the first inner surface in the facing direction, and having an end surface facing the first inner surface located between the support surface and the first inner surface.

13. The substrate processing apparatus according to claim 12, wherein an end of the partition wall is located between the end face of the at least one side spacer member and the first inner surface in the opposing direction.

14. The substrate processing apparatus according to claim 12, wherein the end surface of the at least one side spacer member is located between the surface of the substrate and the support surface in the facing direction.

15. The substrate processing apparatus of claim 12, wherein the at least one side spacer member extends from the first position to the second position in the transport direction.

16. The substrate processing apparatus according to claim 8, wherein a portion of said spacer member facing said irradiation unit in said transport direction is detachable.

17. The substrate processing apparatus of claim 8, further comprising at least one side spacer member arranged alongside the support section in a width direction perpendicular to the transport direction and the opposing direction, extending along the support surface and protruding from the second inner surface towards the first inner surface in the opposing direction, with an end face opposing the first inner surface located between the support surface and the first inner surface, wherein the housing is formed with a substrate loading entrance that is open in the transport direction at the first position, and in a first region close to the substrate loading entrance, the spacer member and the at least one side spacer member are further away from the first inner surface than in a second region between the first region and the second position.

18. A substrate processing apparatus according to claim 1 or 2, wherein the substrate is rectangular and has a plurality of corners, and the support portion has a plurality of corner support surfaces facing the substrate and supporting the plurality of corners of the substrate.

19. The substrate processing apparatus according to claim 1 or 2, wherein the irradiation unit irradiates the substrate with ultraviolet rays as the energy rays in an air atmosphere to clean the substrate.

20. The substrate processing apparatus of claim 8, further comprising: side spacer members arranged alongside the support section in a width direction perpendicular to the transport direction and the opposing direction, extending along the support surface, and protruding from the second inner surface toward the first inner surface in the opposing direction, with an end face opposing the first inner surface located between the support surface and the first inner surface, wherein the spacer members and the side spacer members are spaced apart in the width direction, and the transport section has a moving section that protrudes from the second inner surface toward the first inner surface between the spacer members and the side spacer members and supports the support section, and the support section is moved by moving the moving section.

Images