Cleanser composition for flux residue removal

Abstract

In one embodiment, the present disclosure provides a cleanser composition for flux residue removal that has an excellent ability to remove flux residue remaining in gaps.　In one embodiment, the present disclosure relates to a cleanser composition for flux residue removal containing component A, component B, and component C, wherein the mass ratio [(A+B) / C] of the total of component A and component B to component C is more than 0.9 and less than 7.6. Component A: a glycol ether having a solubility in water of 10 mass% or more at 20°C Component B: a glycol ether having a solubility in water of less than 10 mass% at 20°C Component C: a hydrocarbon

Description

Cleaning composition for removing flux residue

[0001] The present disclosure relates to a cleaning composition for removing flux residue and a cleaning method using the cleaning composition.

[0002] Soldering is commonly used to mount electronic components on electronic substrates such as printed wiring boards. In recent years, technological innovations aimed at increasing the processing speed of electronic devices, saving energy, and reducing the emission of environmental pollutants have led to advances in 1) lead-free soldering, 2) miniaturization of wiring and solder bumps, and 3) thinner wiring boards to reduce the weight and resource consumption of devices. In particular, 1) the trend toward lead-free soldering has resulted in higher reflow temperatures due to the rise in the melting point of the solder metal. This has made flux more susceptible to degradation and polymerization, making it more difficult to remove. Given this background, there is a demand for cleaning agents that can effectively clean organic residues after high-temperature reflow.

[0003] For example, in Japanese Patent Laid-Open No. 5-306481 (Patent Document 1), hydrocarbons having 10 to 18 carbon atoms: 5 to 85% by weight, R 1 -O-(C n H 2n O) m -R 2 A detergent composition for precision parts or jigs and tools has been proposed, which contains 1 to 80% by weight of a glycol ether compound represented by the formula: 1 O-(CHC(R 3 )HO)-R 2and a hydrocarbon having 8 to 14 carbon atoms. JP 2022-50320 A (Patent Document 3) proposes a cleaning agent composition for removing flux residue, which contains (A) a glycol ether having a boiling point of 200°C or higher and a solubility in water at 20°C of 10 mass% or less, (B) an amino alcohol having a boiling point of 200°C or higher, (C) at least one hydrophobic compound selected from a hydrocarbon having 10 to 24 carbon atoms and an aliphatic alcohol having 10 to 24 carbon atoms, and (D) water. Japanese Patent Laid-Open Publication No. 2015-145476 (Patent Document 4) proposes a cleaning composition for removing solder flux residue, which contains diethylene glycol monobutyl ether, diethylene glycol monohexyl ether, a specific amine compound, a polyalkylene glycol alkylamine-type nonionic surfactant, and water, and in which the content of diethylene glycol monobutyl ether is from 40.0 to 54.6% by mass, the content of diethylene glycol monohexyl ether is from 40.0 to 54.6% by mass, the content of the specific amine compound is from 0.3 to 5.0% by mass, and the content of polyalkylene glycol alkylamine-type nonionic surfactant is from 0.1 to 5.0% by mass.

[0004] In one aspect, the present disclosure relates to a cleaning composition for removing flux residue, comprising the following components A, B, and C, wherein the mass ratio [(A+B) / C] of the total of components A and B to component C is more than 0.9 and less than 7.6: Component A: a glycol ether having a solubility in water at 20°C of 10% by mass or more; Component B: a glycol ether having a solubility in water at 20°C of less than 10% by mass; and Component C: a hydrocarbon.

[0005] In one aspect, the present disclosure relates to a cleaning method including a cleaning step of cleaning an object having flux residue with the cleaning composition of the present disclosure.

[0006] FIG. 1 shows an example of the appearance of a test piece used in a cleaning test, where A is a schematic side view and B is a schematic plan view.

[0007] In recent years, miniaturization of wiring and solder bumps has led to dense mounting of components such as semiconductor packages. This high component density increases the temperature of the board during use of equipment equipped with the board. Therefore, solder with a high melting temperature that can withstand high temperatures is used to connect the components. Due to the miniaturization of solder bumps and the denaturation of flux caused by higher-than-conventional temperatures during solder melting, the cleaning compositions disclosed in the above patent documents are insufficient in removing flux residue (flux removal), making their cleaning performance insufficient. In particular, when other components (e.g., semiconductor chips, chip-type capacitors, other circuit boards, etc.) are stacked and mounted on a circuit board, a space (gap) is formed between the circuit board and the other components. The flux used for mounting the components is likely to remain in this gap as flux residue after soldering by reflow or other methods. In recent years, the length of this gap has tended to become longer. In particular, cleaning becomes more difficult as the gap length increases, especially in narrow spaces (gaps) where the shortest distance between the circuit board and the other components is only a few tens of micrometers. Therefore, there is a need to improve the cleaning performance of gaps.

[0008] Therefore, the present disclosure provides a cleaning composition for removing flux residue that has excellent removability (gap cleaning ability) for flux residue remaining in gaps, and a cleaning method using the same.

[0009] According to one aspect, the present disclosure can provide a cleaning composition for removing flux residue that has excellent removability (gap cleaning ability) for flux residue remaining in gaps.

[0010] This disclosure is based on the finding that flux residue remaining in long crevices can be efficiently removed by using a cleaning composition containing a hydrophilic glycol ether (component A), a hydrophobic glycol ether (component B), and a hydrocarbon (component C) in a specific ratio.

[0011] That is, in one aspect, the present disclosure relates to a cleaning composition for removing flux residue (hereinafter also referred to as "the cleaning composition of the present disclosure") containing the following components A, B, and C, wherein the mass ratio [(A+B) / C] of the total of components A and B to component C is more than 0.9 and less than 7.6: Component A: a glycol ether having a solubility in water at 20°C of 10% by mass or more; Component B: a glycol ether having a solubility in water at 20°C of less than 10% by mass; and Component C: a hydrocarbon.

[0012] The present disclosure can provide a cleaning composition for removing flux residue that has excellent removability (gap cleaning ability) for flux residue remaining in gaps.

[0013] Although the details of the mechanism of action for manifesting the effects of the present disclosure are partially unclear, it is speculated as follows. Generally, glycol ethers dissolve flux residues but have poor penetration under components and are unable to penetrate gaps efficiently. This is why cleaning agents using glycol ethers tend to have poor gap cleaning performance. However, when a glycol ether with a solubility in water of 10 mass % or more at 20°C (hydrophilic glycol ether, component A) and a glycol ether with a solubility in water of less than 10 mass % at 20°C (hydrophobic glycol ether, component B) are used in combination with a hydrocarbon (component C), it is believed that the penetration of the cleaning agent composition improves, allowing it to penetrate under components more easily and improving gap cleaning performance. Although hydrocarbon (component C) has low flux residue solubility, it imparts compatibility between components A and B, improving penetration while maintaining flux residue solubility, which is thought to improve gap cleaning performance. Furthermore, when the mass ratio (A+B) / C of the total content of Components A and B to the content of Component C in the cleaning composition of the present disclosure is more than 0.9 and less than 7.6, it is considered that both solubility and penetration of flux residue can be achieved, thereby improving gap cleaning performance. However, the present disclosure should not be interpreted as being limited to this mechanism.

[0014] In this disclosure, "flux" refers to a rosin-based flux containing rosin or a rosin derivative used in soldering, or a water-soluble flux not containing rosin, which is used to remove oxides that prevent connection between metals such as electrodes and wiring and solder metal, and promote said connection. In this disclosure, "soldering" includes reflow and flow soldering. In this disclosure, "solder flux" refers to a mixture of solder and flux. In this disclosure, "flux residue" refers to flux-derived residue remaining on a substrate after forming solder bumps using flux and / or on a substrate after soldering using flux. For example, when other components (e.g., semiconductor chips, chip-type capacitors, other circuit boards, etc.) are stacked and mounted on a circuit board, a space (gap) is formed between the circuit board and the other components. The flux used for mounting may also remain in this gap as flux residue after soldering by reflow or other methods. In the present disclosure, the term "cleaning composition for removing flux residue" refers to a cleaning composition for removing flux residue after forming and / or soldering a solder bump using flux or solder flux. In order to achieve a significant cleaning effect with the cleaning composition according to the present disclosure, the solder is preferably a lead (Pb)-free solder containing tin.

[0015] [Component A: Glycol Ether Having a Solubility of 10% by Mass or More in Water at 20°C] The glycol ether having a solubility of 10% by mass or more in water at 20°C (hereinafter also referred to as "Component A") contained in the cleaning composition of the present disclosure may be one type or a combination of two or more types. The solubility of Component A in water at 20°C is 10% by mass or more, and may be 20% by mass or more, 50% by mass or more, or 80% by mass or more, or the solubility in water at 20°C may be infinite. Note that "infinite" solubility in water at 20°C means that the solubility is 100% by mass or more. In the present disclosure, the solubility of a glycol ether in water at 20°C can be measured by the following method. 10 g of ion-exchanged water is placed in a glass container, 1 g of glycol ether is added, and the mixture is stirred at 20°C for 5 minutes and allowed to stand for 5 minutes. After standing, if the appearance of the aqueous solution is uniform and transparent, it is judged to have dissolved, and if the appearance of the aqueous solution is cloudy or separated into two or more layers, it is judged to have not dissolved. Specifically, this can be carried out by the method described in the Examples. Glycol ethers having a solubility in water of 10% by mass or more at 20°C are hydrophilic glycol ethers, and in one or more embodiments, have a hydroxyl group. In one or more embodiments, component A can be represented by the following formula (I). That is, in one or more embodiments, component A is a compound represented by the following formula (I).

[0016] <Compound represented by formula (I)> R 1 -O-(R 2 -O) m -H (I) In the above formula (I), R 1 is a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and from the viewpoint of improving flux residue removability, a linear or branched alkyl group having 1 to 5 carbon atoms is preferred, a linear or branched alkyl group having 2 to 5 carbon atoms is more preferred, a linear or branched alkyl group having 3 to 5 carbon atoms is even more preferred, a linear or branched alkyl group having 4 to 5 carbon atoms is even more preferred, and a linear or branched alkyl group having 4 to 5 carbon atoms is even more preferred. 2 is -CH2-CR 3H- or -CH-CH-CH-, and from the same viewpoint, -CH-CR 3 H- is preferred, and -CH-CH- is more preferred. 3 is a hydrogen atom or a methyl group, and from the same viewpoint, a hydrogen atom is preferable. m is an integer of 1 to 4, and from the same viewpoint, it is preferably 1 to 3, more preferably 1 or 2, and even more preferably 2.

[0017] From the viewpoint of improving flux residue removability, Component A may be at least one selected from diethylene glycol monoalkyl ethers and dipropylene glycol monoalkyl ethers, each having an alkyl group having from 1 to 5 carbon atoms. Preferred examples of Component A include diethylene glycol monobutyl ether (BDG, solubility in water at 20°C: infinite), diethylene glycol monomethyl ether (MDG, solubility in water at 20°C: infinite), triethylene glycol monobutyl ether (BTG, solubility in water at 20°C: infinite), and propylene glycol monopropyl ether (PFG, solubility in water at 20°C: infinite).

[0018] The solubility parameter (SP value) δ of component A is set to 20 (J / cm3) from the viewpoint of improving the removability of flux residue. 1 / 2 More than 20.2 (J / cm3) is preferable. 1 / 2 More preferably, 20.4 (J / cm3) or more 1 / 2 More preferably, from the viewpoint of improving flux residue removal, 23.0 (J / cm 1 / 2 Preferably, 22.0 (J / cm3) or less 1 / 2 Less than 21.0 (J / cm3) is more preferable. 1 / 2The following is more preferred. In the present disclosure, the solubility parameter (SP value) δ refers to the solubility parameter in Hansen's three-dimensional solubility space shown below. The definition and calculation of the solubility parameter in Hansen's three-dimensional solubility space are described in the document "The three dimensional solubility parameters" by C. M. Hansen, J. Paint Technol., Vol. 39, p. 105 (1967). According to this Hansen space, δD characterizes the London dispersion force resulting from the formation of dipoles induced during molecular collisions, δp characterizes the Debye interaction force between permanent dipoles and the Keesom interaction force between the induced dipole and the permanent dipole, and δh characterizes specific interaction forces (hydrogen bond, acid / base, donor / acceptor, etc.), and the solubility parameter δ can be calculated by the following formula: δ = (δD 2 +δp 2 +δh 2 ) 1 / 2 The parameters δp, δh, δD and δ have units of (J / cm3). 1 / 2 In the present disclosure, δp, δh, and δD are determined from the structural formula of each compound using "Hansen Solubility Parameters in Practice (HSPiP)," a software for Windows (registered trademark), and the solubility parameter δ is calculated according to the above formula.

[0019] The content of Component A during use of the cleaning composition of the present disclosure is preferably 30% by mass or more, more preferably 35% by mass or more, and even more preferably 40% by mass or more, from the viewpoint of improving gap cleaning performance for flux residue. Also, from the viewpoint of improving gap cleaning performance for flux residue, the content of Component A during use of the cleaning composition of the present disclosure is preferably 60% by mass or less, more preferably 55% by mass or less, and even more preferably 50% by mass or less. More specifically, the content of Component A during use of the cleaning composition of the present disclosure is preferably 30% by mass or more and 60% by mass or less, more preferably 35% by mass or more and 55% by mass or less, and even more preferably 40% by mass or more and 50% by mass or less. When Component A is a combination of two or more types, the content of Component A refers to the total content of those components.

[0020] [Component B: Glycol Ether Having a Solubility of Less than 10 Mass% in Water at 20°C] The glycol ether having a solubility of less than 10 mass% in water at 20°C (hereinafter also referred to as "Component B") contained in the cleaning composition of the present disclosure may be one type or a combination of two or more types. The solubility of Component B in water at 20°C is less than 10 mass%, preferably 1 mass% or less, and preferably 0.05 mass% or more, and more preferably 0.1 mass% or more. Glycol ethers having a solubility of less than 10 mass% in water at 20°C are hydrophobic glycol ethers and can be represented by the following formula (II) or (III). That is, in one or more embodiments, Component B is at least one type selected from a compound represented by the following formula (II) and a compound represented by the following formula (III).

[0021] <Compound represented by formula (II)> R 4 O-(R 5 -O) p -H (II) In the above formula (II), R 4 R is a linear or branched alkyl group having 6 to 10 carbon atoms, and from the viewpoint of improving the gap cleaning ability of flux residue, a linear or branched alkyl group having 6 to 9 carbon atoms is preferable. 5 is -CH2-CR 6 H- or -CH-CH-CH-, and from the same viewpoint, -CH-CR 6 H- is preferred, and -CH-CH- is more preferred. 6 is a hydrogen atom or a methyl group, and from the same viewpoint, a hydrogen atom is preferable. p is an integer of 1 to 4, and from the same viewpoint, it is preferably 1 to 3, more preferably 1 or 2, and even more preferably 1.

[0022] <Compound represented by formula (III)> R 7 O-(R 9 -O) q -R 8 (III) In the above formula (III), R 7is a linear or branched alkyl group having 4 to 10 carbon atoms, and from the viewpoint of improving the gap cleaning property of flux residue, a linear or branched alkyl group having 4 to 8 carbon atoms is preferred, a linear or branched alkyl group having 4 to 6 carbon atoms is more preferred, and a linear alkyl group having 4 to 6 carbon atoms is even more preferred. 8 R is a linear or branched alkyl group having from 4 to 10 carbon atoms, and from the same viewpoint, it is preferably a linear or branched alkyl group having from 4 to 8 carbon atoms, more preferably a linear or branched alkyl group having from 4 to 6 carbon atoms, and even more preferably a linear alkyl group having from 4 to 6 carbon atoms. 9 is -CH2-CR 10 H- or -CH-CH-CH-, and from the same viewpoint, -CH-CR 10 H- is preferred, and -CH-CH- is more preferred. 10 is a hydrogen atom or a methyl group, and from the same viewpoint, a hydrogen atom is preferable. q is an integer of 1 to 4, and from the same viewpoint, it is preferably 1 to 3, more preferably 1 or 2, and even more preferably 1.

[0023] Examples of component B, from the viewpoint of improving gap cleaning properties and flux residue removal properties, include 2-ethylhexyl glycol (EHG, solubility in water at 20°C: 0.2% by mass), hexyl glycol (HeG, solubility in water at 20°C: 1.0% by mass), and diethylene glycol dibutyl ether (DBDG, solubility in water at 20°C: 0.3% by mass).

[0024] The solubility parameter (SP value) of component B is set to 17.0 (J / cm3) from the viewpoint of improving gap cleaning properties and flux residue removal properties. 1 / 2 More than 18.0 (J / cm3) is preferable. 1 / 2 More preferably, 19.0 (J / cm3) or more 1 / 2 More preferably, from the same viewpoint, 20 (J / cm 1 / 2 Preferably, 19.8 (J / cm3) or less 1 / 2 Less than 19.6 (J / cm3) is more preferable. 1 / 2 The following is more preferred:

[0025] From the viewpoint of separability, the content of component B when using the cleaning composition of the present disclosure is preferably 5% by mass or more, more preferably 7% by mass or more, more preferably 10% by mass or more, and even more preferably 13% by mass or more, and from the viewpoint of improving gap cleaning performance for flux residue, the content is preferably 40% by mass or less, more preferably 35% by mass or less, more preferably 30% by mass or less, more preferably 25% by mass or less, more preferably 20% by mass or less, even more preferably 18% by mass or less, and even more preferably 17% by mass or less. More specifically, the content of component B when using the cleaning composition of the present disclosure is preferably 5% by mass or more and 40% by mass or less, 5% by mass or more and 35% by mass or less, 5% by mass or more and 30% by mass or less, or 5% by mass or more and 25% by mass or less, more preferably 7% by mass or more and 20% by mass or less, more preferably 7% by mass or more and 18% by mass or less, even more preferably 10% by mass or more and 18% by mass or less, and even more preferably 13% by mass or more and 17% by mass or less. When component B is a combination of two or more types, the content of component B refers to the total content thereof.

[0026] The mass ratio A / B of component A to component B (content of A / content of B) in the cleaning composition of the present disclosure is preferably 1 or more, more preferably 1.2 or more, even more preferably 1.4 or more, and still more preferably 1.5 or more from the viewpoint of improving gap cleaning performance for flux residue, and is preferably 15 or less, more preferably 10 or less, even more preferably 7 or less, and still more preferably 3.6 or less from the viewpoint of stability of the cleaning composition. More specifically, the mass ratio A / B is preferably 1 or more and 15 or less, more preferably 1.2 or more and 10 or less, even more preferably 1.4 or more and 7 or less, and still more preferably 1.5 or more and 3.6 or less.

[0027] [Component C: Hydrocarbon] The cleaning composition of the present disclosure contains one hydrocarbon (hereinafter also referred to as "component C"), and may contain two or more hydrocarbons in combination. From the viewpoint of improving gap cleaning performance for flux residue, the number of carbon atoms in component C is preferably 10 or more, more preferably 12 or more, and even more preferably 13 or more. From the same viewpoint, it is preferably 18 or less, more preferably 16 or less, and even more preferably 14 or less. In one or more embodiments, component C is preferably a compound having a flash point of 80°C or higher from the viewpoint of safety of the cleaning composition. From the same viewpoint, the flash point of component C is preferably 85°C or higher, more preferably 90°C or higher, even more preferably 95°C or higher, and preferably 150°C or lower, more preferably 130°C or lower, and even more preferably 110°C or lower. From the same viewpoint, saturated or unsaturated hydrocarbons having 10 or more carbon atoms are preferred as component C, and unsaturated hydrocarbons having 10 or more carbon atoms are more preferred. Examples of component C include 1-tetradecene (flash point 113° C.), 1-dodecene (flash point 87° C.), and 1-hexadecene (flash point 135° C.).

[0028] From the viewpoint of improving gap cleaning performance for flux residue, the content of component C during use of the cleaning composition of the present disclosure is preferably 5% by mass or more, preferably 10% by mass or more, preferably 15% by mass or more, more preferably 20% by mass or more, and even more preferably 23% by mass or more. From the same viewpoint, it is preferably 40% by mass or less, more preferably 35% by mass or less, and even more preferably 30% by mass or less. More specifically, the content of component C during use of the cleaning composition of the present disclosure is preferably 5% by mass or more and 40% by mass or less, 10% by mass or more and 40% by mass or less, or 15% by mass or more and 40% by mass or less, more preferably 20% by mass or more and 35% by mass or less, and even more preferably 23% by mass or more and 30% by mass or less. When component C is a combination of two or more types, the content of component C refers to the total content of those components.

[0029] In the cleaning composition of the present disclosure, the mass ratio A / C of Component A to Component C (content of Component A / content of Component C) is preferably 1 or more, more preferably 1.2 or more, and even more preferably 1.4 or more, from the viewpoint of improving gap cleaning performance for flux residue, and from the same viewpoint, it is preferably 5 or less, more preferably 4 or less, even more preferably 3.9 or less, and still more preferably 3 or less. More specifically, the mass ratio A / C is preferably 1 or more and 5 or less, more preferably 1.2 or more and 4 or less, even more preferably 1.4 or more and 3.9 or less, and still more preferably 1.4 or more and 3 or less.

[0030] In the cleaning composition of the present disclosure, the mass ratio B / C of component B to component C (content of component B / content of component C) is preferably 0.1 or more, more preferably 0.2 or more, from the viewpoint of improving gap cleaning performance for flux residue, and is preferably 2 or less, more preferably 1.5 or less, and even more preferably 1.2 or less, from the viewpoint of stability of the cleaning composition. More specifically, the mass ratio B / C is preferably 0.1 or more and 2 or less, more preferably 0.2 or more and 1.5 or less, and even more preferably 0.2 or more and 1.2 or less.

[0031] In the cleaning composition of the present disclosure, the mass ratio of the total of Components A and B to Component C [(A+B) / C] (total content of Components A and B / content of Component C) is more than 0.9, preferably 1 or more or more than 1, more preferably 1.5 or more, and even more preferably 2 or more, from the viewpoint of improving the gap cleaning ability of flux residue. From the same viewpoint, it is less than 7.6, preferably 7 or less, more preferably 5 or less, and even more preferably 4 or less or less than 4. More specifically, in one or more embodiments, the mass ratio [(A+B) / C] is more than 0.9 and less than 7.6, preferably 1 or more and 7 or less, more preferably 1.5 or more and 5 or less, and even more preferably 2 or more and 4 or less. In one or more embodiments, the mass ratio [(A+B) / C] is preferably more than 0.9 and less than 7.6, preferably 1 or more and 7 or less, more preferably 1.5 or more and 5 or less, and even more preferably 2 or more and 4 or less.

[0032] [Component D: Water] In one or more embodiments, the cleaning composition of the present disclosure may further contain water (hereinafter also referred to as "component D"). Examples of component D include ion-exchanged water, RO water (water treated with a reverse osmosis membrane), distilled water, pure water, and ultrapure water. When the cleaning composition of the present disclosure contains component D, the content of component D during use of the cleaning composition of the present disclosure is preferably 5% by mass or more, more preferably 8% by mass or more, from the viewpoints of lowering the flash point and improving the gap cleaning ability of flux residue. Also, from the viewpoints of stability and improving the gap cleaning ability of flux residue, the content of component D is preferably 20% by mass or less, more preferably 15% by mass or less. More specifically, the content of component D in the cleaning composition of the present disclosure is preferably 5% by mass or more and 20% by mass or less, more preferably 8% by mass or more and 15% by mass or less.

[0033] The mass ratio A / D of component A to component D (content of A / content of D) in the cleaning composition of the present disclosure is preferably 2 or more, more preferably 3 or more, and even more preferably 4 or more from the viewpoint of stability of the cleaning composition, and is preferably 10 or less, more preferably 8 or less, more preferably 7 or less, and even more preferably 5.5 or less from the viewpoint of gap cleaning ability for flux residue. More specifically, the mass ratio A / D is preferably 2 or more and 10 or less, more preferably 3 or more and 8 or less, even more preferably 4 or more and 7 or less, and even more preferably 4 or more and 5.5 or less.

[0034] The mass ratio B / D of component B to component D (content of B / content of D) in the cleaning composition of the present disclosure is preferably 0.5 or more, more preferably 1 or more, and even more preferably 1.3 or more from the viewpoint of gap cleaning ability for flux residue, and is preferably 3 or less, more preferably 2 or less, and even more preferably 1.7 or less from the viewpoint of stability of the cleaning composition. More specifically, the mass ratio B / D is preferably 0.5 or more and 3 or less, more preferably 1 or more and 2 or less, and even more preferably 1.3 or more and 1.7 or less.

[0035] In the cleaning composition of the present disclosure, the mass ratio of the total of Components A and B to Component D [(A+B) / D] (total content of Components A and B / content of Component D) is preferably 3 or more, more preferably 5 or more, and even more preferably 6 or more from the viewpoint of improving the gap cleaning ability of flux residue, and from the same viewpoint, it is preferably 20 or less, more preferably 17 or less, and even more preferably 15 or less, 10 or less, 8 or less, or 7 or less. More specifically, the mass ratio [(A+B) / D] is preferably 3 or more and 20 or less, more preferably 5 or more and 17 or less, and even more preferably 6 or more and 15 or less.

[0036] The mass ratio C / D of component C to component D (content of C / content of D) in the cleaning composition of the present disclosure is preferably 1 or more, more preferably 1.5 or more, and even more preferably 2 or more, from the viewpoint of gap cleaning ability for flux residue, and is preferably 5 or less, more preferably 4 or less, and even more preferably 3 or less, from the viewpoint of stability of the cleaning composition. More specifically, the mass ratio C / D is preferably 1 or more and 5 or less, more preferably 1.5 or more and 4 or less, and even more preferably 2 or more and 3 or less.

[0037] [Component E: Amine] From the viewpoint of flux residue removability, the cleaning composition of the present disclosure can further contain at least one amine (hereinafter also referred to as "Component E") selected from amino alcohols and aliphatic tertiary amines. Component E may be one type or a combination of two or more types. In one or more embodiments, the amino alcohol (alkanolamine) may be a tertiary alkanolamine, such as N,N-dibutylethanolamine (dibutylaminoethanol) or butyldiethanolamine. An example of an aliphatic tertiary amine is N,N'-dimethylpalmitylamine. When the cleaning composition of the present disclosure contains Component E, the content of Component E during use of the cleaning composition of the present disclosure is preferably 1% by mass or more, more preferably 3% by mass or more, and even more preferably 4% by mass or more, from the viewpoint of flux residue removability, and preferably 10% by mass or less, more preferably 7% by mass or less, and even more preferably 5% by mass or less, from the viewpoint of damage to surrounding components. More specifically, the content of Component E in the cleaning composition of the present disclosure during use is preferably 1% by mass or more and 10% by mass or less, more preferably 3% by mass or more and 7% by mass or less, and even more preferably 4% by mass or more and 5% by mass or less. When Component E is a combination of two or more types, the content of Component E refers to the total content thereof.

[0038] [Component F: Chelating Agent] The cleaning composition of the present disclosure can further contain a chelating agent (hereinafter also referred to as "Component F") from the viewpoint of metal residue removability. Component F may be one type or a combination of two or more types. Here, an example of the metal residue is a residue derived from tin contained in reflowed solder (tin oxide residue). In one or more embodiments, tin contained in solder may scatter to the periphery of a component during the reflow process and remain as tin oxide residue, and the chelating agent can remove the tin oxide residue. Component F can be at least one chelating agent selected from carboxylic acid-based chelating agents and phosphorus-based chelating agents. Examples of carboxylic acid-based chelating agents include hydroxycarboxylic acid-based chelating agents such as citric acid, malic acid, tartaric acid, and gluconic acid. Examples of phosphorus-based chelating agents include phosphonic acid-based chelating agents such as etidronic acid (1-hydroxyethane-1,1-diphosphonic acid). When the cleaning composition of the present disclosure contains component F, the content of component F during use of the cleaning composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, and even more preferably 0.3% by mass or more, from the viewpoint of metal residue removability, and is preferably 1.0% by mass or less, more preferably 0.7% by mass or less, and even more preferably 0.5% by mass or less, from the viewpoint of metal component damage. More specifically, the content of component F during use of the cleaning composition of the present disclosure is preferably 0.1% by mass or more and 1.0% by mass or less, more preferably 0.2% by mass or more and 0.7% by mass or less, and even more preferably 0.3% by mass or more and 0.5% by mass or less. When component F is a combination of two or more types, the content of component F refers to the total content of those components.

[0039] [Other Components] The cleaning composition of the present disclosure may contain, as needed, solvents other than Components A, B, and C, rust inhibitors, thickeners, dispersants, basic substances other than Component E, pH adjusters, polymeric compounds, surfactants, solubilizers, preservatives, bactericides, antibacterial agents, antifoaming agents, and antioxidants, which are generally used in cleaning agents, within the scope of not impairing the effects of the present disclosure.

[0040] In one or more embodiments, the cleaning composition of the present disclosure may be free of a nonionic surfactant having an average HLB of 3 to 18. For example, the content of the nonionic surfactant having an average HLB of 3 to 18 in the cleaning composition of the present disclosure is preferably less than 0.5% by mass, more preferably 0.1% by mass or less, and even more preferably 0% by mass (i.e., no nonionic surfactant is contained).

[0041] [Method for producing detergent composition] The detergent composition of the present disclosure can be produced, for example, by blending component A, component B, component C, and, as needed, optional components (component D, component E, component F, other components) using a known method. In one or more embodiments, the detergent composition of the present disclosure can be produced by blending at least component A, component B, and component C. Accordingly, in one aspect, the present disclosure relates to a method for producing a detergent composition, including a step of blending at least component A, component B, and component C. In the present disclosure, "blending" includes mixing component A, component B, component C, and, as needed, optional components (component D, component E, component F, other components) simultaneously or in any order. In the method for producing a detergent composition of the present disclosure, the blended amount of each component can be the same as the content of each component when the detergent composition of the present disclosure is used as described above. In the present disclosure, the "content of each component when the detergent composition is used" refers to the content of each component at the time of cleaning, i.e., at the time when the detergent composition is first used for cleaning.

[0042] The cleaning composition of the present disclosure may be produced and stored as a concentrate from the viewpoints of addition, storage, and transportation. The dilution ratio of the concentrate of the cleaning composition of the present disclosure may be, for example, 3 to 30 times. The concentrate of the cleaning composition of the present disclosure can be used by diluting it with water (component D) so that the contents of components A, B, and C, and the optional component D and other components are as described above (i.e., the contents during cleaning).

[0043] [pH of Cleaning Composition] The cleaning composition of the present disclosure is preferably alkaline to improve gap cleaning performance for flux residue, and preferably has a pH of 7.0 or more and 14 or less, or 7.0 or more and 8.5 or less, for example. The pH can be adjusted as needed by appropriately blending a desired amount of a basic substance other than Component E, such as an inorganic acid such as nitric acid or sulfuric acid, an organic acid such as an oxycarboxylic acid, a polycarboxylic acid, an aminopolycarboxylic acid, or an amino acid, or a metal salt or ammonium salt thereof, ammonia, sodium hydroxide, or potassium hydroxide. In the present disclosure, the pH of the cleaning composition is the pH at 25°C when the cleaning composition is in use, and can be measured by the method described in the Examples.

[0044] [Object to be Cleaned] The cleaning composition of the present disclosure is used to clean objects having flux residue. Examples of objects having flux residue include objects having reflowed solder. Specific examples of objects to be cleaned include electronic components and their manufacturing intermediates, specifically soldered electronic components and their manufacturing intermediates. More specifically, examples include electronic components soldered with solder and their manufacturing intermediates, electronic components connected via solder and their manufacturing intermediates, electronic components containing flux residue in gaps between soldered components and their manufacturing intermediates, and electronic components containing flux residue in gaps between soldered components and their manufacturing intermediates. The manufacturing intermediates are intermediate products in the manufacturing process of electronic components, including semiconductor packages and semiconductor devices. Examples include circuit boards on which at least one component selected from semiconductor chips, chip capacitors, and circuit boards is mounted by flux soldering, and / or circuit boards on which solder bumps are formed for soldering the components. The gap in the object to be cleaned is, for example, the space formed between a circuit board and a component (semiconductor chip, chip capacitor, circuit board, etc.) soldered and mounted on the circuit board, and refers to a space with a height (distance between components) of, for example, 5 to 500 μm, 10 to 250 μm, or 20 to 100 μm. The width and depth of the gap depend on the size and spacing of the mounted components and electrodes (lands) on the circuit board.

[0045] [Cleaning Method] In one aspect, the present disclosure relates to a cleaning method (hereinafter also referred to as the "cleaning method of the present disclosure") including a step of cleaning an object having flux residue with the cleaning composition of the present disclosure (hereinafter also referred to as the "cleaning method of the present disclosure"). The cleaning step includes contacting the object having flux residue with the cleaning composition of the present disclosure. Examples of a method of contacting the object with the cleaning composition of the present disclosure or a method of cleaning the object with the cleaning composition of the present disclosure include a method of contacting the object in a bathtub of an ultrasonic cleaning device and a method of contacting the object by spraying the cleaning composition (shower method). The cleaning composition of the present disclosure can be used for cleaning as is without dilution. In one or more embodiments, the cleaning method of the present disclosure preferably includes a step of rinsing the object with water or an alcohol and drying it after contacting the object with the cleaning composition. The cleaning method of the present disclosure can efficiently clean flux residue remaining in gaps between soldered components. From the viewpoint of achieving remarkable effects in cleaning performance and penetration into narrow gaps by the cleaning method of the present disclosure, the solder is preferably lead (Pb)-free solder. Furthermore, from the same viewpoint, the cleaning method of the present disclosure is preferably used for electronic components soldered using fluxes described in International Publication No. 2006 / 025224, JP-B-6-75796, JP-A-2014-144473, JP-A-2004-230426, JP-A-2013-188761, JP-A-2013-173184, etc. In the cleaning method of the present disclosure, ultrasonic waves are preferably applied when the cleaning composition of the present disclosure comes into contact with the object to be cleaned, and the ultrasonic waves are more preferably relatively strong, so that the cleaning power of the cleaning composition of the present disclosure can be easily exerted. From the same viewpoint, the frequency of the ultrasonic waves is preferably 26 to 72 Hz and 80 to 1500 W, and more preferably 36 to 72 Hz and 80 to 1500 W.

[0046] [Method for Manufacturing Electronic Components] In one aspect, the present disclosure relates to a method for manufacturing electronic components (hereinafter also referred to as the "method for manufacturing electronic components of the present disclosure"), which includes at least one step selected from a step of mounting at least one component selected from a semiconductor chip, a chip-type capacitor, and a circuit board on a circuit board by soldering using flux, and a step of forming solder bumps on the circuit board for connecting the component, etc., and a step of cleaning at least one selected from the circuit board on which the component is mounted and the circuit board on which the solder bumps are formed by the cleaning method of the present disclosure. The soldering using flux is performed, for example, with lead-free solder, and may be performed by a reflow method or a flow method. The electronic components include semiconductor packages without semiconductor chips, semiconductor packages with semiconductor chips, and semiconductor devices. In the method for manufacturing electronic components according to the present disclosure, cleaning using the cleaning method according to the present disclosure reduces flux residue remaining in gaps between soldered components and around solder bumps, thereby suppressing short circuits between electrodes and poor adhesion caused by residual flux residue, thereby enabling the manufacturing of highly reliable electronic components. Furthermore, cleaning using the cleaning method according to the present disclosure makes it easy to clean flux residue remaining in gaps between soldered components, thereby shortening the cleaning time and improving the manufacturing efficiency of electronic components.

[0047] [Kit] In one aspect, the present disclosure relates to a kit (hereinafter also referred to as the "kit of the present disclosure") for use in the cleaning method of the present disclosure and / or the method for producing electronic components of the present disclosure. In one or more embodiments, the kit of the present disclosure is a kit for producing the cleaning composition of the present disclosure. One embodiment of the kit of the present disclosure includes a kit (two-liquid cleaning composition) that includes a solution containing Components A and B (first liquid) and a solution containing Component C (second liquid) in an unmixed state, and the first liquid and the second liquid are mixed upon use. The first liquid and the second liquid may each contain the optional components described above (Component D, Component E, Component F, and other components) as necessary. In one or more embodiments, at least one of the first liquid and the second liquid may contain part or all of Component D (water). In one or more embodiments, the first liquid and the second liquid may be mixed and then diluted with Component D (water) as necessary.

[0048] The present disclosure further relates to one or more of the following embodiments: <1> A cleaning composition for removing flux residue, comprising the following components A, B, and C, wherein the mass ratio [(A+B) / C] of the total of components A and B to component C is more than 0.9 and less than 7.6: Component A: a glycol ether having a solubility in water of 10% by mass or more at 20°C; Component B: a glycol ether having a solubility in water of less than 10% by mass at 20°C; and Component C: a hydrocarbon. <2> The cleaning composition according to <1>, wherein the mass ratio [(A+B) / C] of the total of components A and B to component C is 1 or more and 7 or less. <3> The cleaning agent composition according to <1> or <2>, wherein the mass ratio of the total of components A and B to component C [(A+B) / C] is more than 0.9 and 1 or more, or more than 1, or 1.5 or more, or 2 or more, and less than 7.6 and 7 or less, or 5 or less, or 4 or less, or less than 4. <4> The cleaning agent composition according to any of <1> to <3>, wherein component A has a hydroxyl group. <5> The cleaning agent composition according to any of <1> to <4>, wherein component A is at least one selected from diethylene glycol monoalkyl ethers and dipropylene glycol monoalkyl ethers having an alkyl group having from 1 to 5 carbon atoms. <6> The cleaning agent composition according to any of <1> to <5>, wherein component B is at least one selected from compounds represented by the following formula (II) and compounds represented by the following formula (III). R 4 O-(R 5 -O) p -H (II) In the above formula (II), R 4 is a linear or branched alkyl group having 6 to 10 carbon atoms, and R 5 is -CH2-CR 6 H- or -CH-CH-CH-, R 6 is a hydrogen atom or a methyl group, and p is an integer of 1 or more and 4 or less. 7 O-(R 9 -O) q -R 8 (III) In the above formula (III), R 7 is a linear or branched alkyl group having from 4 to 10 carbon atoms; R 8is a linear or branched alkyl group having from 4 to 10 carbon atoms; R 9 is -CH2-CR 10 H- or -CH-CH-CH-, R 10 represents a hydrogen atom or a methyl group, and q represents an integer of 1 or more and 4 or less. <7> The cleaning composition according to any one of <1> to <6>, wherein component B is one or more selected from 2-ethylhexyl glycol, hexyl glycol, and diethylene glycol dibutyl ether. <8> The solubility parameter (SP value) of component B is 17.0 (J / cm3) 1 / 2 or more, or 18.0 (J / cm3) 1 / 2 or more, or 19.0 (J / cm3) 1 / 2 and 20 (J / cm3) 1 / 2 or less, or 19.8 (J / cm3) 1 / 2 or less, or 19.6 (J / cm3) 1 / 2<9> The cleaning composition according to any one of <1> to <8>, wherein component C is an unsaturated hydrocarbon having 10 or more carbon atoms, or 1-tetradecene, or 1-dodecene, or 1-hexadecene. <10> The cleaning composition according to any one of <1> to <9>, wherein the content of component A is 30% by mass or more, or 35% by mass or more, or 40% by mass or more, and 60% by mass or less, or 55% by mass or less, or 50% by mass or less. <11> The cleaning agent composition according to any one of <1> to <10>, wherein the content of component B is 5% by mass or more, or 7% by mass or more, or 10% by mass or more, or 13% by mass or more, and 40% by mass or less, or 35% by mass or less, or 30% by mass or less, or 25% by mass or less, or 20% by mass or less, or 18% by mass or less, or 17% by mass or less. <12> The cleaning agent composition according to any one of <1> to <11>, wherein the content of component C is 5% by mass or more, or 10% by mass or more, or 15% by mass or more, or 20% by mass or more, or 23% by mass or more, and 40% by mass or less, or 35% by mass or less, or 30% by mass or less. <13> The cleaning agent composition according to any one of <1> to <12>, further comprising water (component D). <14> The cleaning composition according to <13>, wherein the content of component D is 5% by mass or more, or 8% by mass or more, and 20% by mass or less, or 15% by mass or less. <15> The cleaning composition according to <13> or <14>, wherein the mass ratio of component D to the total of components A and B [(A+B) / D] is 3 or more, or 5 or more, or 6 or more, and 20 or less, or 17 or less, or 15 or less, or 10 or less, or 8 or less, or 7 or less. <16> The cleaning composition according to any of <1> to <15>, wherein the mass ratio A / B of component A to component B (A content / B content) is 1 or more, or 1.2 or more, or 1.4 or more, or 1.5 or more, and 15 or less, or 10 or less, or 7 or less, or 3.6 or less.<17> The cleaning composition according to any one of <1> to <16>, wherein the mass ratio A / C of component A to component C (content of component A / content of component C) is 1 or more, or 1.2 or more, or 1.4 or more, and 5 or less, or 4 or less, or 3.9 or less, or 3 or less. <18> The cleaning composition according to any one of <1> to <17>, wherein the mass ratio B / C of component B to component C (content of component B / content of component C) is 0.1 or more, or 0.2 or more, and 2 or less, or 1.5 or less, or 1.2 or less. <19> The cleaning composition according to any one of <13> to <18>, wherein the mass ratio A / D of component A to component D (content of A / content of D) is 2 or more, or 3 or more, or 4 or more, and 10 or less, or 8 or less, or 7 or less, or 5.5 or less. <20> The cleaning agent composition according to any one of <13> to <19>, wherein the mass ratio C / D of component C to component D (C content / D content) is 1 or more, or 1.5 or more, or 2 or more, and 5 or less, or 4 or less, or 3 or less. <21> The cleaning agent composition according to any one of <1> to <20>, further containing at least one amine (component E) selected from an amino alcohol and an aliphatic tertiary amine. <22> The cleaning agent composition according to <21>, wherein the content of component E is 1% by mass or more, or 3% by mass or more, or 4% by mass or more, and 10% by mass or less, or 7% by mass or less, or 5% by mass or less. <23> The cleaning agent composition according to any one of <1> to <22>, further containing a chelating agent (component F). <24> The cleaning composition according to <23>, wherein the content of component F is 0.1 mass% or more, or 0.2 mass% or more, or 0.3 mass% or more, and 1.0 mass% or less, or 0.7 mass% or less, or 0.5 mass% or less. <25> A cleaning method, comprising: a cleaning step of cleaning an object having flux residue with the cleaning composition according to any one of <1> to <24>.

[0049] The present disclosure will be specifically described below using examples, but the present disclosure is not limited to these examples in any way.

[0050] 1. Preparation of Cleaning Compositions (Examples 1 to 20, Comparative Examples 1 to 5) The components were blended in a 100 mL glass beaker to give the compositions shown in Table 1, and mixed under the following conditions to prepare the cleaning compositions of Examples 1 to 20 and Comparative Examples 1 to 5. Unless otherwise specified, the numerical value for each component in the table indicates the content (mass%) in the prepared cleaning composition. <Mixing Conditions> Liquid temperature: 25°C Stirrer: Magnetic stirrer (50 mm rotor) Rotation speed: 300 rpm Stirring time: 10 minutes

[0051] The following components were used in the cleaning composition: (Component A) Butyl diglycol (BDG) [Nihon Nyukazai Co., Ltd., diethylene glycol monobutyl ether] (solubility in water at 20°C: infinite, solubility parameter δ: 20.4 (J / cm3) 1 / 2 ) (Component B) 2-ethylhexyl glycol (EHG) [Nihon Nyukazai Co., Ltd., ethylene glycol mono 2-ethylhexyl ether] (solubility in water at 20°C: 0.2 mass%, solubility parameter δ: 19.0 (J / cm3) 1 / 2 Hexyl glycol (HeG) [ethylene glycol monohexyl ether, manufactured by Nippon Nyukazai Co., Ltd.] (solubility in water at 20°C: 1.0 mass%, solubility parameter δ: 19.8 (J / cm3) 1 / 2 Dibutyl diglycol (DBDG) [diethylene glycol dibutyl ether, manufactured by Nippon Nyukazai Co., Ltd.] (solubility in water at 20°C: 0.3 mass%, solubility parameter δ: 17.1 (J / cm3) 1 / 2) (Component C) 1-tetradecene [Idemitsu Kosan Co., Ltd., Linearene 14] (carbon number 14, flash point 113°C) 1-dodecene [Idemitsu Kosan Co., Ltd., Linearene 12] (carbon number 12, flash point 87°C) 1-hexadecene [Idemitsu Kosan Co., Ltd., Linearene 16] (carbon number 16, flash point 135°C) (Component D) Water [pure water of 1 μS / cm or less produced using Organo Corporation's G-10DSTSET water purification system] (Amines) Dibutylethanolamine [Nippon Nyukazai Co., Ltd., Amino Alcohol 2B] Butyldiethanolamine [Nippon Nyukazai Co., Ltd., Amino Alcohol MBD] N,N'-dimethylpalmitinamine [Tokyo Chemical Industry Co., Ltd.] (Chelating agent) Citric acid [Fujifilm Wako Pure Chemical Industries, Ltd.] Malic acid [Fujifilm Wako Pure Chemical Industries, Ltd.] Etidronic acid [Fujifilm Wako Pure Chemical Industries, Ltd.]

[0052] [Measurement of Solubility of Glycol Ether (Components A and B) in Water at 20°C] The solubility of glycol ether in water at 20°C is calculated as follows: 10 g of ion-exchanged water is placed in a glass container, 1 g of glycol ether is added, and the mixture is stirred at 20°C for 5 minutes and allowed to stand for 5 minutes. After standing, if the aqueous solution appears uniform and transparent, it is judged to have dissolved; if the aqueous solution appears cloudy or separated into two or more layers, it is judged to have not dissolved. If it is judged to have dissolved at the initial amount added, the glycol ether is gradually added and stirred until it is no longer uniform and transparent, and the solubility is calculated using the following formula: Solubility in water at 20°C (% by mass) = Total mass (g) of glycol ether added until it is no longer uniform and transparent / Mass (g) of ion-exchanged water × 100 If it is judged to have not dissolved at the initial amount added, the operation of gradually adding ion-exchanged water and stirring is repeated until it is no longer uniform and transparent, and the solubility is calculated using the following formula: Solubility in water at 20°C (mass%) = Mass (g) of glycol ether when it becomes uniform and transparent / Total mass (g) of ion-exchanged water × 100 When the solubility is 100% by mass or more, the solubility in water at 20°C is expressed as "infinite."

[0053] [Solubility parameter δ of glycol ether (components A and B)] Solubility parameter δ of glycol ether (J / cm3)1 / 2 was calculated using the following formula using the computer software "Hansen Solubility Parameters in Practice (HSPiP)": δ = (δD 2 +δp 2 +δh 2 ) 1 / 2

[0054] [pH Measurement] The pH was measured as follows: 20 g of each cleaning composition was added to a 50 mL glass beaker, and the pH was measured at 25° C. using a pH meter (manufactured by TDK Toa Corporation). An electrode was immersed in the cleaning composition, and the value was read 3 minutes later.

[0055] 2. Evaluation of Cleaning Compositions The prepared cleaning compositions of Examples 1 to 20 and Comparative Examples 1 to 5 were subjected to the following tests to evaluate their gap cleaning ability (flux residue removal ability).

[0056] [Evaluation of Gap Cleanability (Flux Residue Removal)] <Flux Residue Model Used> A commercially available solder flux (Eco Solder M705-BPS9V-T2H (manufactured by Senju Metal Industry Co., Ltd., a mixture of solder metal (Sn-3Ag-0.5Cu)) and flux (a mixture of rosin acid, additives, and solvent)) was placed in a copper container and heated at 250°C for 60 minutes in a N2 atmosphere to remove the solvent. The recovered flux was used as the flux residue model. <Test Piece> As shown in Figure 1, the test piece was a glass epoxy substrate 1 with a glass plate 2 placed on it via a spacer to form a gap 3 (height 30 μm, width (spacer spacing) 16 mm, depth 32 mm). The above-mentioned flux residue model was filled into the gap 3 and used for the cleaning test. <Cleaning Method> Cleaning was performed using an ultrasonic cleaning device (PHENIX+ manufactured by KAIJO, 38 kHz, 300 W). First, the test pieces were immersed in the cleaning composition in an ultrasonic cleaning device (60°C, 5 minutes), then immersed in ion-exchanged water for a first rinse (25°C, 3 minutes), and then immersed in fresh ion-exchanged water in the same device for a second rinse (25°C, 3 minutes) (5-minute cleaning). The test pieces were then dried in a low-temperature air dryer (80°C, 5 minutes). <Evaluation Method> The flux residue remaining under the glass plate on the dried test substrate was measured using the area measurement function of a digital microscope (Keyence VHX-6000) to calculate the flux residue area before and after cleaning. The removal rate was calculated using the following formula, and the gap cleaning ability (flux residue removability) was evaluated based on the following evaluation criteria. The results are shown in Table 1. Flux residue removal rate (%) = [(area with flux residue attached before cleaning) - (area with flux residue attached after cleaning)] / (area with flux residue attached before cleaning) x 100 <Evaluation criteria> A: Removal rate of 90% or more B: Removal rate of 80% or more but less than 90% C: Removal rate of 70% or more but less than 80% D: Removal rate of 50% or more but less than 70% E: Removal rate of less than 50%

[0057]

[0058] As shown in Table 1 above, the cleaning agent compositions of Examples 1 to 20, in which the mass ratio (A+B) / C was greater than 0.9 and less than 7.6, were superior in gap cleaning ability to Comparative Example 1, in which the mass ratio (A+B) / C was 7.6, Comparative Example 2, in which the mass ratio (A+B) / C was 0.9, Comparative Example 3, which did not contain component B, Comparative Example 4, which did not contain component A, and Comparative Example 5, in which the mass ratio (A+B) / C was 91.0.

[0059] Use of the cleaning composition of the present disclosure can efficiently remove flux residue remaining in gaps. This makes it possible, for example, to shorten the flux cleaning step in the semiconductor device manufacturing process and improve the performance and reliability of the manufactured semiconductor device, thereby improving the productivity of semiconductor devices.

[0060] 1: Glass epoxy board, 2: Glass plate, 3: Gap

Claims

1. A cleaning composition for removing flux residue, comprising the following components A, B, and C, wherein the mass ratio of the total of components A and B to component C [(A+B) / C] is greater than 0.9 and less than 7.6: Component A: a glycol ether having a solubility in water at 20°C of 10% by mass or more; Component B: a glycol ether having a solubility in water at 20°C of less than 10% by mass; and Component C: a hydrocarbon.

2. The cleaning composition according to claim 1, wherein the mass ratio of the total of components A and B to component C [(A+B) / C] is 1 or more and 7 or less.

3. A cleaning composition according to claim 1 or 2, wherein the mass ratio of the sum of components A and B to component C [(A+B) / C] is greater than 1 and less than 4.

4. A cleaning composition according to any one of claims 1 to 3, wherein component A has a hydroxyl group.

5. A cleaning composition according to any one of claims 1 to 4, wherein the content of component A is 30% by mass or more and 60% by mass or less.

6. A cleaning composition according to any one of claims 1 to 5, wherein the content of component B is 5% by mass or more and 40% by mass or less.

7. A cleaning composition according to any one of claims 1 to 6, wherein the content of component C is 5% by mass or more and 40% by mass or less.

8. A cleaning composition according to any one of claims 1 to 7, further comprising water (component D).

9. The cleaning composition according to claim 8, wherein the content of component D is 5% by mass or more and 20% by mass or less.

10. A cleaning composition according to claim 8 or 9, wherein the mass ratio of the sum of components A and B to component D [(A+B) / D] is 3 or more and 20 or less.

11. The cleaning composition according to any one of claims 1 to 10, further comprising at least one amine (component E) selected from amino alcohols and aliphatic tertiary amines.

12. The cleaning composition according to claim 11, wherein the content of component E is 1% by mass or more and 10% by mass or less.

13. A cleaning composition according to any one of claims 1 to 12, further comprising a chelating agent (ingredient F).

14. The cleaning composition according to claim 13, wherein the content of component F is 0.1% by mass or more and 1.0% by mass or less.

15. A cleaning method comprising a cleaning step of cleaning an object having flux residue with the cleaning agent composition according to any one of claims 1 to 14.

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