Method for manufacturing glass substrate for semiconductor and glass substrate for semiconductor

Abstract

Disclosed are a method for manufacturing a glass substrate for a semiconductor and a glass substrate for a semiconductor. The method for manufacturing a glass substrate for a semiconductor comprises the steps of: preparing a glass core; forming a pattern on the glass core by using a photosensitizer; forming a groove corresponding to the pattern by etching a glass core surface that is not protected by the photosensitizer; forming a brazing adhesive layer having a specific thickness in the groove by using a brazing alloy having a lower melting point than the glass core; forming an electrode by filling the groove having the brazing adhesive layer with a conductive metal having a higher melting point than the brazing alloy; and performing a heat treatment under specific conditions such that the brazing adhesive layer formed in the groove mediates the coupling of the glass core and the electrode from between the glass core and electrode.

Description

Manufacturing method of glass substrate for semiconductor and glass substrate for semiconductor

[0001] The present invention relates to a method for manufacturing a glass substrate, and more particularly, to a method for manufacturing a glass substrate for semiconductors and a glass substrate for semiconductors.

[0002] In the manufacturing of electronic components, implementing circuits on semiconductor wafers is called the Front-End (FE) process. Assembling the wafers into a usable state for actual products is called the Back-End (BE) process. This Back-End (BE) process includes the packaging (Multi-Chip Package) process, which assembles multiple semiconductors produced in wafer form into a bundle suitable for device integration.

[0003] Semiconductor technology is advancing in diverse forms, including sub-micron nanometer line widths, cell counts exceeding 10 million, high-speed operation, and high heat dissipation. However, the technology to perfectly package these devices remains relatively lacking. Consequently, the electrical performance of semiconductors is often determined more by packaging technology and the resulting electrical connections than by the semiconductor technology itself.

[0004] Ceramic or resin is typically used as the packaging substrate material. However, ceramic substrates have high resistance and dielectric constants, making it difficult to mount high-performance, high-frequency semiconductor devices on them. Resin substrates, while relatively easy to mount high-performance, high-frequency semiconductor devices on, have limitations in reducing wiring pitch, and their uneven surface makes them particularly unsuitable for use in high-performance semiconductor packaging, which is undergoing continuous miniaturization.

[0005] A method using smooth-surfaced silicon as an alternative packaging substrate has been developed, but this method has the disadvantages of being expensive and difficult to manufacture on a large scale. In particular, silicon packaging substrates have a high coefficient of thermal expansion (CTE), making them unsuitable for use in die packaging applications with high-density micro-sized bumps, such as those used in high-bandwidth memory (HBM).

[0006] Glass substrates are recently gaining attention as a potential replacement for silicon substrates. Glass substrates are more cost-effective than silicon substrates and can be designed and manufactured on larger surfaces, enabling the production of a greater number of chips. Furthermore, the extremely smooth and flat surface of glass allows for precise circuit design, making them advantageous for implementing high-performance, high-density circuits.

[0007] However, when forming an electric wire (or electrode) on a glass substrate using a conductive metal that functions as an electrical connection medium, there is a problem in that the adhesive strength of the conductive metal is reduced due to the smooth surface of the glass substrate, and as a result, the conductive metal is easily peeled off from the glass substrate.

[0008] The technical problem to be solved by the present invention is to provide a method for manufacturing a semiconductor glass substrate and a semiconductor glass substrate that can significantly improve the adhesive strength of an electrode (electrical wiring) formed on a glass substrate using a conductive metal.

[0009] Another technical problem to be solved by the present invention is to provide a method for manufacturing a semiconductor glass substrate using a lift-off method, which can easily and reliably remove deposits unnecessarily deposited when forming an electrode, and a semiconductor glass substrate.

[0010] According to one aspect of the present invention as a means of solving the problem,

[0011] (a) A step of preparing a glass core;

[0012] (b) a step of forming a pattern on the glass core using a photosensitive agent;

[0013] (c) a step of etching the surface of the glass core not protected by the photosensitive agent to form a groove corresponding to the pattern;

[0014] (d) a step of forming a brazing adhesive layer with a specific thickness in the groove using a brazing alloy having a lower melting point than the glass core;

[0015] (e) a step of forming an electrode by filling a conductive metal having a higher melting point than the brazing alloy into the groove where the brazing adhesive layer is formed; and

[0016] (f) a step of performing heat treatment under specific conditions so that the brazing adhesive layer formed in the groove mediates a strong bond between the glass core and the electrode; a method for manufacturing a glass substrate for semiconductors is provided.

[0017] In the step (a) of the method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the glass core may be an oxide-reinforced glass having a thickness of 20 to 30 μm and high strength, corrosion resistance, transparency, and hardness at room temperature.

[0018] In the step (a) of the method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the glass core may be borosilicate glass or aluminosilicate glass.

[0019] In the step (d) of the method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, a brazing adhesive layer can be formed in the groove by depositing a brazing alloy to a specific thickness through a sputtering process.

[0020] Here, the specific thickness may be 25 to 100 nm.

[0021] In the step (e) of the method for manufacturing a glass substrate for semiconductors according to one aspect of the present invention, the conductive metal constituting the electrode may be copper (Cu), and may be filled into a groove in which a brazing adhesive layer is formed through an electrolytic plating or sputtering process.

[0022] In the step (f) of the method for manufacturing a glass substrate for semiconductors according to one aspect of the present invention, heat treatment may be performed in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range that is higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core.

[0023] Here, the first temperature range may be 577°C or more and less than 600°C.

[0024] In a method for manufacturing a semiconductor glass substrate according to one aspect of the present invention, the brazing alloy may be an aluminum-silicon (Al-Si) alloy in which the silicon (Si) content is 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the entire alloy and the remainder is aluminum.

[0025] A method for manufacturing a glass substrate for semiconductors according to one aspect of the present invention also comprises:

[0026] (e') A step of removing unnecessary deposits deposited on the surface of the photosensitive agent together with the photosensitive agent, which is located between the steps (e) and (f), may be further included.

[0027] According to another aspect of the present invention as a means of solving the problem,

[0028] A glass core having a first surface that is even and a second surface that is parallel to the first surface;

[0029] One or more grooves formed on at least one of the first and second surfaces;

[0030] An electrode formed in the groove by a conductive metal so as to have a surface aligned on the same plane as the surface of the glass core in which the groove is formed; and

[0031] A brazing adhesive layer formed with a specific thickness by a brazing alloy between the groove and the electrode, and forming a fusion brazing interface that mediates mutual bonding between the groove and the electrode during heat treatment;

[0032] A semiconductor glass substrate is provided, wherein the melting point of the brazing alloy is lower than the melting points of the glass core and the conductive metal.

[0033] In a semiconductor glass substrate according to another aspect of the present invention, the glass core may be an oxide-reinforced glass having a thickness of 20 to 30 μm and having high strength, corrosion resistance, transparency, and hardness at room temperature.

[0034] In a semiconductor glass substrate according to another aspect of the present invention, the glass core may preferably be borosilicate glass or aluminosilicate glass.

[0035] In another aspect of the present invention, the thickness of the brazing adhesive layer in the semiconductor glass substrate may be 25 to 100 nm.

[0036] In a semiconductor glass substrate according to another aspect of the present invention, the brazing alloy may be an aluminum-silicon (Al-Si) alloy in which the silicon (Si) content is 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the entire alloy and the remainder is aluminum, and the conductive metal may be copper (Cu).

[0037] In another aspect of the present invention, the fusion brazing interface in a semiconductor glass substrate may be formed by performing heat treatment in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range that is higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core.

[0038] Here, the first temperature range may be 577°C or more and less than 600°C.

[0039] According to the present invention, a brazing bonding layer is formed in the groove of a glass substrate using a brazing alloy, and a conductive metal is filled to form an electrode, followed by heat treatment under specific conditions. During this heat treatment, a phase change (solid to liquid) in the brazing bonding layer creates a fusion brazing interface, which mediates a strong interlayer bond between the glass core and the electrode.

[0040] As a result, the adhesion and bonding properties of the electrode to the glass substrate can be significantly improved or enhanced, and the problem of prior art where the electrode peels off from the organic substrate, adversely affecting performance or quality, can be clearly resolved. In other words, the adhesion and bonding properties of the electrode layer to the glass substrate can be improved, thereby providing a high-performance, high-quality semiconductor glass substrate.

[0041] In addition, since the electrode is formed in a groove etched to a specific depth and bonded on three sides, the adhesive strength of the electrode is further improved, and since the electrode is located inside the etched groove, it is easy to remove the photosensitive agent and unnecessary deposits outside the groove.

[0042] That is, since a groove corresponding to the pattern is formed through an etching process while the pattern is formed with a photosensitive agent, and subsequent processing (formation of a brazing adhesive layer and electrode formation) is performed on the groove and the surface of the photosensitive agent, unnecessary deposits are formed together with the photosensitive agent in a relief structure that is easy to remove on the glass substrate. Therefore, there is an advantage in that unnecessary deposits can be reliably removed when the photosensitive agent is removed.

[0043] FIG. 1 is a flowchart illustrating a method for manufacturing a semiconductor glass substrate according to an embodiment of the present invention.

[0044] FIG. 2 and FIG. 3 are process schematic diagrams schematically illustrating a manufacturing process of a semiconductor glass substrate according to an embodiment of the present invention.

[0045] FIG. 4 is a cross-sectional configuration diagram of a semiconductor glass substrate manufactured by a method for manufacturing a semiconductor glass substrate according to an embodiment of the present invention.

[0046] FIG. 5 is an enlarged view of the main part of the semiconductor glass substrate illustrated in FIG. 4, and is an enlarged view of the main part of the present invention, which is an enlarged view of part 'A' of FIG. 3.

[0047] Hereinafter, preferred embodiments of the present invention will be described in detail.

[0048] In describing embodiments of the present invention, identical or similar components will be assigned the same reference numbers, and redundant descriptions thereof will be omitted. Furthermore, if a detailed description of a related known technology is deemed to obscure the gist of the embodiments disclosed herein, such detailed description will be omitted.

[0049] In addition, the attached drawings are only intended to facilitate easy understanding of the embodiments disclosed in this specification, and the technical ideas disclosed in this specification are not limited by the attached drawings, and it is to be understood that all modifications, equivalents, or substitutes included in the spirit and technical scope of the present invention are included.

[0050] Additionally, terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

[0051] Additionally, when a component is referred to as being "connected" or "connected" to another component, it should be understood that it may be directly connected or connected to that other component, but that there may also be other components in between.

[0052] On the other hand, when it is said that a component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0053] In addition, it should be understood that terms such as “include,” “have,” and “have” used in describing embodiments of the present invention are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof of the invention, and do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0054] And when a component is said to be “in front”, “behind”, “above” or “below” another component, unless there are special circumstances, it includes not only being placed “in front”, “behind”, “above” or “below” the other component in direct contact with it, but also cases where another component is placed in between.

[0055] The drawings are intended solely to facilitate understanding of the invention and should not be construed as limiting the scope of the invention. Furthermore, it should be noted that relative thicknesses, lengths, and sizes in the drawings may be exaggerated for convenience and clarity of explanation.

[0056] FIG. 1 is a flowchart for explaining a method for manufacturing a semiconductor glass substrate according to an embodiment of the present invention, and FIGS. 2 and 3 are process schematic diagrams schematically illustrating a process for manufacturing a semiconductor glass substrate according to an embodiment of the present invention.

[0057] Referring to FIGS. 1 to 3, a manufacturing method according to an embodiment is a method for manufacturing a semiconductor glass substrate capable of significantly improving the adhesive strength of an electrode layer, including a step (S100) of preparing a glass core (10), a step (S200) of forming a pattern (P) on the glass core (10) with a photosensitive agent (40), and a step (S300) of forming a groove (18) corresponding to the pattern (P) at a specific depth.

[0058] The manufacturing method according to the embodiment also includes a step (S400) of forming a brazing adhesive layer with a specific thickness in the groove using a brazing alloy having a lower melting point than the glass core, a step (S500) of filling the groove in which the brazing adhesive layer is formed with a conductive metal to form an electrode, and a step (S700) of performing heat treatment so that the brazing adhesive layer mediates a strong bond between the glass core and the electrode.

[0059] In the step (S100) of preparing a glass core, a glass core (10) having a predetermined thickness is prepared. In the step (S100) of preparing a glass core, a thin-film glass substrate having a thickness of 20 to 30 μm is prepared. In the step (S100) of preparing a glass core, the glass substrate may be tempered glass whose main component is oxide, which has high strength, corrosion resistance, transparency, and hardness at room temperature.

[0060] In the step of preparing a glass core (S100), the glass substrate may preferably be a borosilicate glass that is mainly composed of boric acid instead of silica, contains at least 5% of boric acid, has a low coefficient of expansion, has chemical resistance to acid and weather resistance, and has excellent thermal shock resistance.

[0061] In the step of preparing a glass core (S100), the glass substrate may be, as another example, aluminosilicate glass, which is made of alumina and boron oxide and has similar properties to borosilicate glass, but has superior heat resistance and high chemical resistance compared to borosilicate glass.

[0062] In the step (S200) of forming a pattern with a photosensitive agent (40) on the glass core, a pattern (P, circuit pattern) can be formed on the glass core (10) through a photolithography process of drawing a semiconductor circuit on a wafer. In other words, in the step S200, a photolithography technique including the process of photosensitive agent application → heat treatment → exposure → positive development can be applied to form the pattern.

[0063] In the step of forming a groove (S300), the surface of the glass core can be etched to form a groove (18) corresponding to the pattern. In the step of forming a groove (S300), the groove (18) corresponding to the pattern (P) can be formed through etching that selectively removes only the surface of the glass core (10) that is not protected by the photosensitive agent (40) (the surface of the glass core exposed to the outside). At this time, the depth (d) of the groove (18) can be 0.8 to 1.2 μm.

[0064] The etching method in the groove forming step (S300) can be a known wet etching method or a dry etching method using a laser or plasma gas. In the case of wet etching, HF or NaOH can be used as the etchant. HF has the advantage of being able to etch at room temperature and having a fast etching speed, while NaOH has the advantage of being able to etch precisely, although its etching conditions are more demanding than HF.

[0065] The step (S400) of forming a brazing adhesive layer is a step of forming a brazing adhesive layer (20) in the groove (18) of the glass core (10) formed in the aforementioned step S300. In the step (S200) of forming a brazing adhesive layer, the brazing adhesive layer (20) is a part that mediates a strong bond between the glass core (10) and an electrode (30) to be described later, and can be formed by depositing a brazing alloy to a specific thickness in the groove (18) formed in the glass core (10).

[0066] In the step (S400) of forming a brazing bonding layer, the brazing alloy constituting the brazing bonding layer (20) may be an alloy having a lower melting point than the glass core (10). The brazing alloy constituting the brazing bonding layer (20) may preferably be an aluminum-silicon (Al-Si) alloy having a silicon (Si) content of 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the total alloy and the remainder being aluminum.

[0067] Aluminum-silicon (Al-Si) alloys are characterized by their light weight, high ductility, and high malleability. They also possess a low melting point and shrinkage, excellent corrosion resistance, and good fluidity in a molten state. Therefore, they readily melt at relatively low temperatures, forming a fusion brazing interface between glass and metal, mediating a strong bond between them.

[0068] In the step (S400) of forming a brazing adhesive layer, the brazing adhesive layer (20) can be formed with a specific thickness in the groove (18) of the glass core (10) through vacuum deposition. In the step (S400) of forming a brazing adhesive layer, the brazing adhesive layer (20) can be formed with a specific thickness (t1) in the groove (18) of the glass core (10) through a sputtering process, which is a type of vacuum deposition method.

[0069] In the step (S400) of forming a brazing adhesive layer, the thickness of the brazing adhesive layer (20) formed in the groove of the glass core (10), i.e., the specific thickness (t1) mentioned above, may be 25 to 100 nm. If the thickness of the brazing adhesive layer (22) is too thin, less than 25 nm, it is difficult to properly perform its function as an adhesive, and if it exceeds 100 nm, the cost may increase due to the input of unnecessary materials, and the electrode formation space may be significantly reduced.

[0070] The step of forming an electrode (S500) is a step of forming an electrode by filling a groove (18) with a conductive metal having a higher melting point than the brazing alloy. In the step of forming an electrode (S500), an electrode (30) can be formed by filling the inner wall surface of the groove (18) of the glass core (10) on which the brazing adhesive layer (20) is formed with a conductive metal through electroplating or sputtering, which is a type of vacuum deposition.

[0071] In the step of forming an electrode (S500), the conductive metal forming the electrode (30) may be copper (Cu). In the step of forming an electrode (S500), the conductive metal forming the electrode (30) may be a conductive material other than copper. For example, aluminum (Al), titanium (Ti), tungsten (W), etc. may be used as the conductive metal forming the electrode.

[0072] In a series of processing steps S400 and S500 described above, a brazing alloy and a conductive material may also be deposited on the surface of the photosensitive agent (40) formed in relief on the surface of the glass core (10). The brazing alloy and conductive material deposited on the surface of the photosensitive agent (40) correspond to unnecessary deposits. Therefore, a step (S600) of removing unnecessary deposits together with the photosensitive agent (40) before performing heat treatment may be added.

[0073] In the step (S600) of removing unnecessary deposits, the photoresist and unnecessary deposits can be removed simultaneously, for example, through dry ashing using plasma. In some cases, the photoresist and unnecessary deposits can also be removed through a CMP (Chemical Mechanical Polishing) process, which removes unnecessary deposits together with the photoresist while flattening the surface of the glass core and the surface of the electrode so that they are aligned on the same plane.

[0074] The heat treatment step (S700) is the final step of the process, and is a step in which the glass core (10) from which unnecessary deposits have been removed is heat-treated under predetermined conditions. In the heat treatment step (S600), the heat treatment is performed at a temperature higher than the melting point of the aforementioned brazing alloy and lower than the melting point of the glass core (10), thereby allowing the brazing adhesive layer (20) to mediate a strong bond between the glass core (10) and the electrode (30).

[0075] In the heat treatment step (S700), the heat treatment may be performed in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range that is higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core (10). In the embodiment, the first temperature range is preferably 577°C or more and less than 600°C, considering that the eutectic temperature of an aluminum-silicon alloy having a silicon (Si) content of 12.5% ​​is 577°C.

[0076] The phase change (solid -> liquid) of the brazing adhesive layer (20) occurs by the above heat treatment performed above the eutectic point of the brazing alloy, and a fusion brazing interface that mediates a strong bond between the glass core (10) and the electrode (30) is formed according to the phase change of the brazing adhesive layer (20), so that the electrode (30) and the groove (18) of the glass core (10) can form a strong bond with each other.

[0077] According to the manufacturing method discussed above, a brazing bonding layer is formed in the grooves of a glass substrate using a brazing alloy, then a conductive metal is filled to form an electrode, followed by heat treatment under specific conditions. During this heat treatment, the phase change (solid to liquid) of the brazing bonding layer creates a fusion brazing interface, which mediates a strong interlayer bond between the glass core and the electrode.

[0078] As a result, the adhesion and bonding properties of the electrode to the glass substrate can be significantly improved or enhanced, and the problem of prior art where the electrode peels off from the organic substrate, adversely affecting performance or quality, can be clearly resolved. In other words, the adhesion and bonding properties of the electrode layer to the glass substrate can be improved, thereby providing a high-performance, high-quality semiconductor glass substrate.

[0079] Furthermore, by forming a groove corresponding to the pattern through an etching process with a photosensitive agent, and performing subsequent processing (forming a brazing adhesive layer and electrodes) on the groove and the surface of the photosensitive agent, unnecessary deposits are formed in relief on the glass substrate along with the photosensitive agent. Therefore, they can be reliably removed during the photosensitive agent removal process. As a result, the defect rate of the electrode can be dramatically reduced.

[0080] FIG. 4 is a cross-sectional view of a semiconductor glass substrate manufactured by the aforementioned method for manufacturing a semiconductor glass substrate, and FIG. 5 is an enlarged view of the main part of the semiconductor glass substrate shown in FIG. 4, and is an enlarged view of the main part of the present invention showing part 'A' of FIG. 4.

[0081] Referring to FIGS. 4 and 5, a semiconductor glass substrate (1) includes a glass core (10) and one or more grooves (18) formed in the glass core (10). The semiconductor glass substrate (1) also includes an electrode (30) formed in the groove (18) by a conductive metal filled in the groove (18), and a brazing adhesive layer (20) formed between the groove (18) and the electrode (30) to mediate a strong bond therebetween.

[0082] The glass core (10) has a first surface (upper surface in the drawing, 12) that is even and a second surface (lower surface in the drawing, 14) that is parallel to the first surface, and one or more grooves (18) can be formed on at least one of the first surface (12) and the second surface (14). At this time, the grooves (18) can be formed to a specific depth in the glass core (10) through a general photolithography process and an etching process.

[0083] For reference, the drawing (Fig. 4) illustrates an example of a configuration in which a groove (18) is formed on the first surface (12) of the glass core (10), but is not limited thereto. Depending on the embodiment, a groove may be formed on the second surface (14) of the glass core (10), or at least one groove (18) may be formed on both the first surface (12) and the second surface (14).

[0084] The glass core (10) may be tempered glass having a thickness of 20 to 30 μm. In an embodiment, the glass core (10) may be tempered glass whose main component is oxide, having high strength, corrosion resistance, transparency, and hardness at room temperature. As a preferred example, the glass core (10) may be borosilicate tempered glass. Depending on the embodiment, it may also be aluminosilicate tempered glass.

[0085] Borosilicate tempered glass is a glass that uses boric acid as its main ingredient instead of silica, and contains at least 5% boric acid. It has a low coefficient of expansion, chemical resistance to acid and weather resistance, and excellent thermal shock resistance, making it suitable for semiconductor glass substrates. Aluminum silicate tempered glass is made of alumina and boron oxide, and has similar properties to borosilicate glass, but has superior heat resistance and high chemical resistance compared to borosilicate glass, making it suitable for semiconductor glass substrates.

[0086] A brazing adhesive layer (20) can be formed with a specific thickness in the groove (18) of the glass core (10). The brazing adhesive layer (20) is a part that mediates a strong mutual bond between the glass core (10) and the electrode (30), and can be formed by depositing a brazing alloy with a specific thickness in the groove (18).

[0087] The brazing alloy constituting the brazing bonding layer (20) may be an alloy having a lower melting point than the glass core (10). The brazing alloy constituting the brazing bonding layer (20) may preferably be an aluminum-silicon (Al-Si) alloy having a silicon (Si) content of 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the total alloy and the remainder being aluminum (Al).

[0088] Aluminum-silicon (Al-Si) alloys are characterized by their light weight, high ductility, and high malleability. They also possess a low melting point and shrinkage, excellent corrosion resistance, and good fluidity in a molten state. Therefore, they readily melt at relatively low temperatures, forming a fusion brazing interface between glass and metal, mediating a strong bond between them.

[0089] The fusion brazing interface can be formed by performing a heat treatment in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range that is higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core. In an embodiment, the first temperature range may be 577°C or higher and less than 600°C, considering that the eutectic temperature of an aluminum-silicon alloy having a silicon (Si) content of 12.5% ​​is 577°C.

[0090] The brazing adhesive layer (20) can be formed with a specific thickness (t1) in the groove (18) of the glass core (10) through a sputtering process, which is a type of vacuum deposition method. The specific thickness (t1) can be 25 to 100 nm. If the thickness of the brazing adhesive layer (22) is too thin, less than 25 nm, it is difficult to properly perform its function as an adhesive, and if it exceeds 100 nm, the cost may increase due to the input of unnecessary materials, and the electrode formation space will be greatly reduced.

[0091] The electrode (30) may be made of a conductive metal. The electrode (30) may be formed in the groove (30) by the conductive metal so as to have a surface aligned on the same plane as the surface of the glass core (10) in which the groove (18) is formed. The electrode (30) may be formed so as to be in contact with the brazing adhesive layer (20) inside the groove (18) through electroplating or sputtering, which is a type of vacuum deposition.

[0092] The conductive metal constituting the electrode (30) may be a conductive material having a higher melting point than the glass core (10). The conductive metal constituting the electrode (30) may preferably be copper (Cu). The conductive metal constituting the electrode (30) may be a conductive material other than copper. For example, aluminum (Al), titanium (Ti), tungsten (W), etc. may be used as the conductive metal forming the electrode.

[0093] A semiconductor glass substrate having this configuration forms a brazing bonding layer using a brazing alloy between the grooves of the glass core and the electrodes formed in the grooves. The brazing bonding interface formed by the phase change (solid to liquid) of the brazing bonding layer, which is formed by performing heat treatment under specific temperature conditions, mediates a strong interlayer bonding between the glass core and the electrodes. Accordingly, the adhesive strength and adhesive properties of the electrodes can be significantly enhanced or improved.

[0094] In addition, since the electrodes are formed in grooves etched to a specific depth and bonded on three sides, the adhesive strength of the electrodes is further enhanced, and since the electrodes are located inside the etched grooves, there is also a structural advantage in that it is easy to remove the photosensitive agent and unnecessary deposits outside the grooves.

[0095] Meanwhile, although not illustrated, as another example, a semiconductor glass substrate may be configured in a form in which the brazing adhesive layer is omitted, as shown in FIG. 4. In other words, a semiconductor glass substrate may be configured with only a glass core and electrodes formed in the grooves of the glass core.

[0096] In this case, the electrode can be formed by, for example, a method of filling a graphene-based conductive paste having strong adhesive properties at low temperatures into the groove and then performing low-temperature sintering, or a method of forming a metal seed layer in the groove and plating a conductive metal, such as copper.

[0097] The above description is merely an example of the technical idea of ​​the present invention, and those skilled in the art will appreciate that various modifications and variations can be made without departing from the essential characteristics of the present invention.

[0098] Accordingly, the embodiments disclosed in the present invention are intended to illustrate, rather than limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical concepts within the scope equivalent thereto should be construed as being included within the scope of the present invention.

Claims

1. (a) Step of preparing a glass core; (b) a step of forming a pattern on the glass core using a photosensitive agent; (c) a step of etching the surface of the glass core not protected by the photosensitive agent to form a groove corresponding to the pattern; (d) a step of forming a brazing adhesive layer with a specific thickness in the groove using a brazing alloy having a lower melting point than the glass core; (e) a step of forming an electrode by filling a conductive metal having a higher melting point than the brazing alloy into the groove where the brazing adhesive layer is formed; and (f) A method for manufacturing a glass substrate for semiconductors, comprising: performing a heat treatment under specific conditions so that the brazing adhesive layer formed in the groove mediates mutual bonding between the glass core and the electrode.

2. In paragraph 1, In the above step (a), the glass core, A method for manufacturing a semiconductor glass substrate, which is an oxide-reinforced glass having a thickness of 20 to 30㎛ and high strength, corrosion resistance, transparency, and hardness at room temperature.

3. In paragraph 2, The above glass core, A method for manufacturing a semiconductor glass substrate made of borosilicate glass or aluminosilicate glass.

4. In paragraph 1, A method for manufacturing a semiconductor glass substrate, wherein in the step (d) above, a brazing alloy is deposited to a specific thickness through a sputtering process to form a brazing adhesive layer in the groove.

5. In paragraph 1 or paragraph 4, A method for manufacturing a glass substrate for semiconductors, wherein the above-mentioned specific thickness is 25 to 100 nm.

6. In paragraph 1, In the above step (f), A method for manufacturing a glass substrate for semiconductors, wherein heat treatment is performed in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core.

7. In paragraph 6, A method for manufacturing a glass substrate for semiconductors, wherein the first temperature range is 577°C or more and less than 600°C.

8. In paragraph 1 or paragraph 6, A method for manufacturing a glass substrate for semiconductors, wherein the brazing alloy is an aluminum-silicon (Al-Si) alloy having a silicon (Si) content of 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the total alloy and the remainder being aluminum.

9. In paragraph 1, (e') A method for manufacturing a glass substrate for semiconductors, further comprising a step of removing unnecessary deposits deposited on the surface of a photosensitive agent together with the photosensitive agent, located between steps (e) and (f).

10. A glass core having a first surface that is even and a second surface that is parallel to the first surface; One or more grooves formed on at least one of the first and second surfaces; and A semiconductor glass substrate, comprising an electrode formed in the groove by a conductive metal so as to have a surface aligned on the same plane as the surface of the glass core in which the groove is formed.

11. In paragraph 10, It further includes a brazing adhesive layer formed with a specific thickness by a brazing alloy between the groove and the electrode, and forming a fusion brazing interface that mediates mutual bonding between the groove and the electrode during heat treatment; A glass substrate for semiconductors, wherein the melting point of the brazing alloy is lower than the melting points of the glass core and the conductive metal.

12. In paragraph 11, A semiconductor glass substrate having a thickness of the brazing adhesive layer of 25 to 100 nm.

13. In paragraph 11, A semiconductor glass substrate, wherein the brazing alloy is an aluminum-silicon (Al-Si) alloy having a silicon (Si) content of 12.5 to 12.6 parts by weight (%) based on 100 parts by weight (%) of the total alloy and the remainder being aluminum, and the conductive metal is copper (Cu).

14. In paragraph 13, A semiconductor glass substrate in which the fusion brazing interface is formed by performing heat treatment in a reducing atmosphere or nitrogen atmosphere maintained at a first temperature range higher than the eutectic point of the brazing alloy and lower than the melting point of the glass core.

15. In paragraph 14, A semiconductor glass substrate, wherein the first temperature range is 577°C or more and less than 600°C.

16. In paragraph 10, The above glass core, A semiconductor glass substrate made of oxide-reinforced glass with a thickness of 20 to 30 μm and high strength, corrosion resistance, transparency, and hardness at room temperature.

17. In paragraph 16, The above glass core, A glass substrate for semiconductors, made of borosilicate glass or aluminosilicate glass.

18. In paragraph 10, A semiconductor glass substrate, wherein the conductive metal is copper (Cu).

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