Method for measuring temperature of wafer in reaction chamber, and reaction chamber

Abstract

The present application discloses a method for measuring the temperature of a wafer in a reaction chamber, wherein the reaction chamber comprises a cavity, a heating lamp, an infrared temperature measurement device, and an emissivity measurement device; the heating lamp is used for heating the wafer; the operating wavelength of the emissivity measurement device is a first wavelength, the operating wavelength of the infrared temperature measurement device is a second wavelength, the second wavelength is within a wavelength range of heating light emitted by the heating lamp, and the first wavelength is outside the central wavelength of the heating light. When the heating lamp heats the wafer, the method comprises: acquiring, by means of the emissivity measurement device, a first emissivity of the wafer corresponding to light of the first wavelength; determining, on the basis of the first emissivity, a second emissivity of the wafer corresponding to light of the second wavelength; and the infrared temperature measurement device measuring the temperature of the wafer on the basis of the second emissivity. The described method and reaction chamber can solve the problem of inaccurate temperature measurement results caused by the overlap between a temperature measurement wavelength and the wavelength of the heating light.

Description

Methods for detecting the temperature of wafers in the reaction chamber and the reaction chamber Technical Field

[0001] This application belongs to the field of semiconductor processing technology, and specifically relates to a method for detecting the temperature of a wafer in a reaction chamber and the reaction chamber itself. Background Technology

[0002] Temperature is a crucial process parameter in semiconductor manufacturing. Because the temperatures during processing are relatively high, infrared thermometers are typically used to measure the temperature of the wafer. However, halogen lamps are usually used to heat the wafer during manufacturing, and the wavelength of the heating light from these lamps overlaps with the wavelength measured by the infrared thermometer, leading to inaccurate readings. Summary of the Invention

[0003] The purpose of this application is to disclose a method and a reaction chamber for detecting the temperature of a wafer in a reaction chamber, in order to solve the problem that the temperature measurement results of infrared thermometers are inaccurate because the wavelength of infrared thermometers overlaps with the wavelength of heating light in semiconductor process equipment.

[0004] According to a first aspect of this application, a method for detecting the temperature of a wafer in a reaction chamber is disclosed, the reaction chamber comprising a cavity, a heating lamp, an infrared thermometer, and an emissivity detection device; wherein the heating lamp is used to heat the wafer, the emissivity detection device operates at a first wavelength, the infrared thermometer operates at a second wavelength, the second wavelength being within the wavelength range of the heating light emitted by the heating lamp, and the first wavelength being outside the center wavelength of the heating light; the method includes, when the heating lamp heats the wafer:

[0005] The first emissivity of the wafer corresponding to the first wavelength is obtained by the emissivity detection device;

[0006] The second emissivity of the wafer corresponding to the second wavelength is determined based on the first emissivity;

[0007] The infrared thermometer detects the temperature of the wafer based on the second emissivity.

[0008] According to a second aspect of this application, a reaction chamber is disclosed, comprising a controller, a cavity, a heating lamp, an infrared temperature measuring device, and an emissivity detection device. The controller includes a processor and a memory, the memory storing a computer program that, when executed by the processor, implements the method described above. The heating lamp, the infrared temperature measuring device, and the emissivity detection device are all installed in the cavity. A wafer can be disposed in the cavity. The heating lamp is used to heat the wafer. The emissivity detection device operates at a first wavelength and is used to detect a first emissivity of light from the wafer corresponding to the first wavelength. The infrared temperature measuring device operates at a second wavelength and is used to detect the temperature of the wafer based on a second emissivity of light from the wafer corresponding to the second wavelength, determined by the first emissivity. The second wavelength is located within the center wavelength range of the heating lamp, and the first wavelength is located outside the center wavelength range of the heating lamp.

[0009] This application discloses a method for detecting the temperature of a wafer in a reaction chamber and a reaction chamber, wherein the reaction chamber includes a cavity, a heating lamp, an infrared thermometer, and an emissivity detection device. In the detection process of the above method, the emissivity detection device can detect the emissivity of the wafer. By ensuring that the operating wavelength of the emissivity detection device is outside the center wavelength of the heating light emitted by the heating lamp, interference from the heating lamp on the operation of the emissivity detection device can be minimized. The emissivity detection device then obtains the first emissivity of the wafer corresponding to the first wavelength. Subsequently, based on the first emissivity, the second emissivity of the wafer corresponding to the second wavelength is determined. The second wavelength is within the wavelength range of the heating light. During temperature detection, the detection accuracy of the second wavelength is relatively high. Based on the specific values ​​of the first and second wavelengths, the second emissivity of the same wafer corresponding to the second wavelength can be determined using the first emissivity. With the second emissivity determined, the infrared thermometer can exclude the portion of the received second wavelength light emitted by the heating lamp, thereby obtaining a more accurate wafer temperature measurement result. Attached Figure Description

[0010] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments of this application and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0011] Figure 1 is a flowchart of a method for detecting the temperature of a wafer in a reaction chamber disclosed in an embodiment of this application;

[0012] Figure 2 is a schematic diagram of one working mode of the emissivity detection device in the reaction chamber disclosed in the embodiments of this application;

[0013] Figure 3 is a schematic diagram of another working mode of the emissivity detection device in the reaction chamber disclosed in the embodiments of this application;

[0014] Figure 4 shows the relationship between the luminous flux of light emitted by the wafer at different temperatures and at different wavelengths.

[0015] Figure 5 is a schematic diagram of the structure of the reaction chamber disclosed in the embodiment of this application.

[0016] Reference numerals: 100-emissivity detection device, 110-light emitter, 120-light receiver, 130-auxiliary light source, 200-infrared temperature measurement device, 300-wafer, 400-cavity, 500-carrying device, 600-heating lamp. Detailed Implementation

[0017] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0018] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0019] As shown in Figure 5, this application discloses a reaction chamber that can be applied in semiconductor process equipment to measure the temperature of workpieces (e.g., wafer 300) undergoing processing. The reaction chamber may include a cavity 400 and a support device 500, wherein the support device 500 is used to support the wafer 300 and is disposed within the cavity 400. The reaction chamber also includes a heating lamp 600 for heating the wafer 300.

[0020] As shown in Figures 1-3, the reaction chamber disclosed in this embodiment further includes an emissivity detection device 100 and an infrared temperature measuring device 200 as shown in Figure 5. Similar to the support device 500 and the heating lamp 600, both the emissivity detection device 100 and the infrared temperature measuring device 200 are installed in the cavity 400. More specifically, as shown in Figures 1 and 2, the emissivity detection device 100 includes a light emitter 110, a light receiver 120, and an auxiliary light source 130. That is, the emissivity detection device 100 has the ability to both emit and receive light of the corresponding wavelength. Of course, for the emissivity detection device 100, the wavelengths of the light it can emit and receive are equal. Specifically, the operating wavelength of the emissivity detection device 100 is the first wavelength. That is, both the light emitter 110 and the auxiliary light source 130 are used to emit light of the first wavelength, and correspondingly, the light receiver 120 of the emissivity detection device 100 is used to receive light of the first wavelength.

[0021] To ensure that the emissivity detection device 100 can properly provide emissivity detection for the wafer 300, the auxiliary light source 130 can be positioned below the wafer 300, while the light emitter 110, light receiver 120, and infrared temperature measuring device 200 are all positioned above the wafer 300. That is, the light emitter 110, light receiver 120, and infrared temperature measuring device 200 are all located on the first side of the wafer 300, and the auxiliary light source 130 is located on the second side of the wafer 300. In this configuration, the light receiver 120 can receive light emitted by the light emitter 110 and reflected by the wafer 300, and it can also receive light emitted by the auxiliary light source 130 and transmitted through the wafer 300.

[0022] The infrared temperature measuring device 200 includes a second light receiver, meaning it has the ability to receive light of a corresponding wavelength. More specifically, the infrared temperature measuring device 200 operates at a second wavelength, meaning its second light receiver can receive light of a second wavelength.

[0023] Of course, the first wavelength is not equal to the second wavelength. Therefore, the second light receiver cannot receive the light of the first wavelength emitted by the light emitter 110 and the auxiliary light source 130. However, since the wafer 300 is heated during the process, the heating light emitted by the heating lamp 600 overlaps with the operating wavelength of the infrared temperature measuring device 200. Therefore, the second light receiver can receive part of the heating light from the heating lamp.

[0024] To minimize interference between the wavelength of the heating light emitted by the heating lamp 600 and the first wavelength light received by the light receiver 120, thereby adversely affecting the accuracy of the emissivity detected by the emissivity detection device 100, the temperature measuring device disclosed in this application discloses a first wavelength located outside the center wavelength of the heating light and greater than the center wavelength of the heating light in the semiconductor process equipment. In this case, the reception of the heating light emitted by the heating lamp 600 in the semiconductor process equipment by the light receiver 120 can be minimized or even prevented, thereby improving the detection accuracy of the emissivity detection device 100. Of course, the specific value of the first wavelength can be flexibly selected according to the actual situation, and this document does not limit it.

[0025] In one specific embodiment of this application, the first wavelength is the wavelength of infrared light. Considering that the heating lamp 600 is usually a halogen lamp, and the wavelength range of the heating light of the halogen lamp is usually 900nm-1100nm, that is, the center wavelength of the heating lamp 600 is around 1000nm, in one specific embodiment of this application, the first wavelength can be greater than 1000nm. In this case, the light receiver 120 can be prevented from receiving the heating light as much as possible.

[0026] Regarding the second wavelength, in order to improve the temperature measurement accuracy of wafer 300, and considering that the accuracy is relatively higher when using shorter wavelength light for temperature measurement, in the temperature measurement device disclosed in this application embodiment, the second wavelength is shorter than the first wavelength, and the second wavelength can be located within the wavelength range of the heating light emitted by the heating lamp 600. More specifically, the second wavelength can be an infrared wavelength, and less than 800nm. The specific value of the second wavelength can be flexibly selected according to the actual situation, and a corresponding second light receiver can be selected.

[0027] Furthermore, during the temperature measurement process, the temperature value measured by the infrared thermometer 200 is used as the temperature measurement value of the wafer 300. The temperature measured by the emissivity detection device 100 is used to assist in the measurement of the first emissivity, thereby making the temperature measurement process performed by the infrared thermometer 200 more accurate. It should be noted that although the emissivity detection device 100 primarily measures the emissivity of the wafer 300, it also has the capability to measure temperature.

[0028] More specifically, in the reaction chamber disclosed in the embodiments of this application, as described above, in order to improve the temperature measurement accuracy of the infrared temperature measuring device 200, the second wavelength is smaller than the first wavelength, and the second wavelength is within the wavelength range of the heating light emitted by the heating lamp 600. In this case, if the second wavelength light is used directly for temperature measurement, there is a problem of low temperature measurement accuracy.

[0029] In response to the above situation, the applicant, based on the aforementioned reaction chamber, proposes a method for detecting the temperature of a wafer in the reaction chamber, as claimed in the embodiments of this application. The main technical idea is to ensure that the wavelengths of light received by the emissivity detection device 100 and the infrared temperature measuring device 200 are different, and to use the emissivity detection device 100 to detect the emissivity of the wafer 300. This allows the infrared temperature measuring device 200 to detect the temperature of the wafer 300 based on the emissivity detected by the emissivity detection device 100. Once the emissivity of the wafer 300 is determined, the infrared temperature measuring device 200 can distinguish which light originates from the wafer 300 and which from the heating lamp 600, thereby concentrating the reception of light from the wafer 300. This allows the infrared temperature measuring device 200 to eliminate interference from the heating light emitted by the heating lamp 600, ensuring high accuracy of the temperature results detected by the infrared temperature measuring device 200.

[0030] In detail, as shown in Figure 1, the method for detecting the temperature of a wafer in a reaction chamber disclosed in this application includes:

[0031] S1. Obtain the first emissivity of the wafer corresponding to the first wavelength of light using an emissivity detection device;

[0032] S2. Determine the second emissivity of the wafer corresponding to the second wavelength of light based on the first emissivity;

[0033] S3, The infrared temperature measuring device detects the temperature of the wafer based on the second emissivity.

[0034] As described above, the emissivity detection device operates at a first wavelength. This device can be used to detect the wafer and obtain its emissivity at different temperatures corresponding to the first wavelength, i.e., the first emissivity. Given the first emissivity of the wafer at the first wavelength, a second emissivity corresponding to the second wavelength can be determined based on the actual values ​​of the first and second wavelengths. With the second emissivity determined, the infrared temperature measurement device can determine the radiation of the wafer at the second wavelength based on the second emissivity, thereby overcoming interference from the heating light of the heating lamp and enabling more accurate temperature measurement of the wafer.

[0035] This application discloses a method for detecting the temperature of a wafer in a reaction chamber. The reaction chamber includes a cavity, a heating lamp, an infrared thermometer, and an emissivity detection device. In the detection process of the above method, the emissivity detection device can detect the emissivity of the wafer. By ensuring that the operating wavelength of the emissivity detection device is outside the center wavelength of the heating light emitted by the heating lamp, interference from the heating lamp on the operation of the emissivity detection device can be minimized. The emissivity detection device then obtains the first emissivity of the wafer corresponding to the first wavelength. Subsequently, based on the first emissivity, the second emissivity of the wafer corresponding to the second wavelength is determined. The second wavelength is within the wavelength range of the heating light. During temperature detection, the detection accuracy of the second wavelength is relatively high. Based on the specific values ​​of the first and second wavelengths, the second emissivity of the same wafer corresponding to the second wavelength can be determined using the first emissivity. With the second emissivity determined, the infrared thermometer can exclude the portion of the received second wavelength light emitted by the heating lamp, thereby obtaining a more accurate wafer temperature measurement result.

[0036] In the above embodiment, step S2 includes:

[0037] The correspondence between the first emissivity of light corresponding to the first wavelength and the second emissivity of light corresponding to the second wavelength at different temperatures of the wafer is obtained in advance;

[0038] The second emissivity of the wafer is determined based on the first emissivity and the corresponding relationship.

[0039] Specifically, when heating the wafer using other heating methods, the specific values ​​of the first emissivity corresponding to a first wavelength of light and the second emissivity corresponding to a second wavelength of light can be measured in advance. These measurements are then performed separately for different temperatures of the wafer to determine the correspondence between the first and second emissivity and the temperature. In this case, once the emissivity detection device determines the first emissivity and approximate temperature of the wafer, the second emissivity of the wafer can be determined based on the aforementioned correspondence.

[0040] To reduce the difficulty of applying the method disclosed in the embodiments of this application, in another embodiment of this application, the method may further include:

[0041] Based on Planck's law and the energy of the first and second wavelengths of light radiated by the wafer at different temperatures, as well as the first emissivity of the wafer at different temperatures, the emissivity of the wafer corresponding to the second wavelength of light at different temperatures is determined to obtain the correspondence between the first emissivity and the second emissivity.

[0042] Specifically, based on Planck's law, the energy of electromagnetic waves of different wavelengths radiated by an object at the same temperature has a specific proportional relationship, as shown in Figure 4, which is a schematic diagram of the luminous flux of light of different wavelengths radiated by a wafer at different temperatures. In this case, knowing the actual values ​​of the first and second wavelengths, as well as the proportional relationship between the energy radiated by them, after determining the specific value of the first emissivity, the second emissivity of the wafer corresponding to the second wavelength of light can be determined accordingly. Thus, after measuring the first emissivity using an emissivity detection device, the second emissivity of the wafer can be determined based on the above correspondence, which can significantly reduce the difficulty of using the method disclosed in the embodiments of this application.

[0043] As described above, embodiments of this application also provide a reaction chamber including an emissivity detection device, which can be used to detect a first emissivity of the wafer 300. Specifically, the wafer 300 has different physical properties at different temperatures; more specifically, the wafer 300 is typically opaque at relatively high temperatures and transparent at relatively low temperatures.

[0044] Obviously, the light transmittance of wafer 300 varies under different conditions. In the non-transparent state, wafer 300 can be considered to have virtually no light transmittance. Therefore, the energy of light emitted towards wafer 300 is the sum of the energy of the light reflected from wafer 300 and the energy of the light absorbed by wafer 300. For wafer 300 in the transparent state, the energy of light emitted towards wafer 300 is the sum of the energy of the light reflected from wafer 300, the energy of the light absorbed by wafer 300, and the energy of the light passing through wafer 300. When wafer 300 reaches thermal equilibrium in the vacuum process environment of the reaction chamber, the energy absorbed by wafer 300 is equal to the energy emitted outward. Therefore, based on the above technical principle, the correlation between the emissivity of wafer 300 and temperature can be detected.

[0045] In the above embodiments, step S1 may include:

[0046] When the wafer is in a non-transparent state, the first emissivity of the wafer corresponding to the first wavelength of light is determined based on the reflectivity of light after the first wavelength is reflected by the wafer.

[0047] When the wafer is in a transparent state, the first emissivity of the wafer corresponding to the first wavelength of light is determined based on the reflectivity of light after reflection by the wafer and the transmittance after transmission by the wafer.

[0048] Further, as shown in FIG3, in the method disclosed in the embodiments of this application, the above step S1 includes:

[0049] During the heating process of the wafer, when the wafer is in a non-transparent state, the light emitter is controlled to emit light of a first wavelength, and the light receiver is controlled to receive the light of the first wavelength reflected from the wafer, so as to determine the reflectivity of the wafer at different temperatures corresponding to the first wavelength of light. Since there is no light transmission when the wafer 300 is in a non-transparent state, the reflectivity of the wafer 300 to the first wavelength of light can be obtained by using the energy A4 of the received light and the total energy A3 of the light emitted by the light emitter 110, which is A4 / A3. Of course, since the emissivity detection device 100 itself has the ability to measure the temperature of the wafer 300, based on the already determined reflectivity, the first emissivity of the wafer in the non-transparent state corresponding to the first wavelength of light at this temperature can be determined.

[0050] When the wafer is in a transparent state, the auxiliary light source is controlled to emit light of a first wavelength, and the light receiver is controlled to receive the light of the first wavelength transmitted through the wafer, so as to determine the transmittance of the wafer at different temperatures corresponding to the first wavelength of light. As shown in Figure 2, since light transmission occurs when the wafer 300 is in a transparent state, the light receiver 120 can use the energy A2 of the received light and the total energy A1 of the light emitted by the auxiliary light source 130 to calculate the transmittance of the wafer 300 for the first wavelength of light, which is A2 / A1. As mentioned above, since the reflectivity of the wafer 300 for the first wavelength of light can be determined, in this case, based on the reflectivity and transmittance, the first emissivity of the wafer at different temperatures corresponding to the first wavelength of light when the wafer is in a transparent state can be determined. The two parts of the first emissivity together constitute the set of the first emissivity of the wafer at different temperatures.

[0051] That is, in the embodiments of this application, the operation of the light emitter 110 and the auxiliary light source 130 is related to whether the wafer 300 is transparent. When the wafer 300 is in a non-transparent state, the light emitter 110 is working and emitting light of the first wavelength, and the auxiliary light source 130 is turned off. When the wafer 300 is in a transparent state, the auxiliary light source 130 is working and emitting light of the first wavelength, and the light emitter 110 is turned off.

[0052] As described above, the emissivity detection device 100 can be used to roughly detect the temperature of the wafer 300 and determine the first emissivity of the wafer 300 to light of the first wavelength at the detected temperature. Therefore, according to Planck's law, the infrared temperature measuring device 200 can determine the second emissivity of the wafer 300 to light of the second wavelength based on the first emissivity of the wafer 300 to light of the first wavelength measured by the emissivity detection device 100, and then measure a more accurate temperature value of the wafer 300 accordingly.

[0053] In detail, Planck's formula is as follows:

[0054] Where C1 is the first radiation constant and C2 is the second radiation constant;

[0055] C1=2πhc 2 = (3.7415 ± 0.0003) × 10 8 W·m -2 ·μ m 4

[0056] C2=ch / k=(1.43879±0.00019)×10 4 μ m ·K

[0057] Since light of different wavelengths has different energies at the same temperature and does not intersect or cross each other, and given that the first wavelength and the second wavelength are known quantities, and the first emissivity of the wafer 300 at a specific temperature is known, based on the corresponding relationship between the luminous flux of different wavelengths of light radiated by the wafer 300 at different temperatures (as shown in Figure 4), the second emissivity of the wafer 300 for the second wavelength of light at a specific temperature can be determined. Based on the second emissivity for the second wavelength of light, the infrared temperature measuring device 200 can eliminate the interference of heating light in the reaction chamber and determine the temperature of the wafer 300 more accurately.

[0058] For example, using the emissivity detection device 100, the temperature of the wafer 300 can be measured to be T, the first wavelength λ1 is a known quantity, and the emissivity of the wafer 300 at this temperature is X. λ1 Therefore, based on the above formula, the radiant energy of wafer 300 for the first wavelength of light can be determined as X. λ1 M λ1 Based on the correspondence shown in Figure 4, the proportional relationship of the radiant energy of wafer 300 for the first and second wavelengths of light at temperature T can be determined. Taking the aforementioned proportional relationship as k as an example, then X... λ1 M λ1 =kX λ 2M λ2 Since the second wavelength λ2 is also a known quantity, and the temperature T and the aforementioned proportional relationship k are also known quantities, M can be calculated. λ2 X is then calculated. λ2 The specific value is the second emissivity of wafer 300 for light of the second wavelength at temperature T.

[0059] It should be noted that, as described above, in this embodiment, the accuracy of temperature measurement using light with a relatively short wavelength is relatively higher. Therefore, although the emissivity detection device 100 can also measure the temperature of the wafer 300, in this application, the emissivity detection device 100 is mainly used to measure the approximate temperature of the wafer 300. Then, based on the first emissivity of the wafer 300 at the aforementioned approximate temperature measured by the emissivity detection device 100, the infrared thermometer 200 further detects the temperature of the wafer 300 to obtain a more accurate temperature detection value.

[0060] In addition, the reaction chamber disclosed in the embodiments of this application may also include devices such as a controller. The controller may include a processor and a memory. The memory stores a computer program, and when the computer program is executed by the processor, it implements the method of any of the above embodiments.

[0061] As described above, the temperature measuring device includes an emissivity detection device 100 and an infrared temperature measuring device 200. The emissivity detection device 100 is used to measure the emissivity of the wafer 300. Therefore, in this embodiment, the number of emissivity detection devices 100 can be one to minimize production costs and reduce the installation difficulty of the temperature measuring device. As for the infrared temperature measuring device 200, only one can be provided. Considering that the actual temperature measurement result is directly provided by the infrared temperature measuring device 200, and to further improve the accuracy of temperature measurement, in a specific embodiment of this application, the number of infrared temperature measuring devices 200 can be multiple, and each of the multiple infrared temperature measuring devices 200 can include a second light receiver, thereby enabling the temperature measuring device to measure the temperature of the wafer 300 simultaneously using multiple second light receivers. Of course, when there are multiple infrared temperature measuring devices 200, each of the multiple infrared temperature measuring devices 200 can measure the temperature at different locations on the wafer 300 based on the first emissivity of the wafer 300 to light of the first wavelength measured by the emissivity detection device 100, and determine the second emissivity of the wafer 300 to light of the second wavelength. That is, the temperature field distribution of the wafer 300 can be obtained by using multiple infrared temperature measuring devices 200.

[0062] As described above, since the installation positions of the multiple infrared temperature measuring devices 200 in the reaction chamber cannot be exactly the same, in order to maximize the accuracy of the temperature values ​​measured by each infrared temperature measuring device 200 in representing the temperature field distribution of the wafer 300, in a specific embodiment of this application, the multiple infrared temperature measuring devices 200 and the light receiver 120 of the emissivity detection device 100 can be disposed on the same side of the wafer, and the light receiver and the multiple infrared temperature measuring devices are distributed sequentially and at intervals along the radial direction of the wafer.

[0063] Furthermore, considering that the wafer 300 is typically circular and is usually in a state of continuous rotation during processing, the temperature at locations with equal radii on the wafer 300 is also essentially equal. Therefore, in order to make the emissivity of the wafer 300 measured by the emissivity detection device 100 for the first wavelength of light more representative, when only one emissivity detection device 100 is provided, the incident point of the light emitted by the light emitter 110 and the auxiliary light source 130 of the emissivity detection device 100 on the wafer 300 can be located within a region of two-thirds to one-third of the radius of the wafer 300. In this case, the reflectivity and transmittance of the wafer 300 for the first wavelength of light detected by one emissivity detection device 100 are more representative of the reflectivity and transmittance of the entire wafer 300 for the first wavelength of light, thereby improving the accuracy of the emissivity detection device 100 in detecting the first emissivity, and indirectly improving the temperature measurement accuracy of the infrared thermometer 200 on the wafer 300.

[0064] More specifically, the light emitted by the light emitter 110 and the auxiliary light source 130 can be positioned at the incident point of the wafer 300 at a point half the radius of the wafer 300, thereby further improving the detection accuracy of the emissivity of the wafer 300 for the first wavelength of light detected by the first detection mechanism, and thus improving the accuracy of the temperature measurement result of the infrared temperature measuring device 200.

[0065] Based on the above embodiments, when there are multiple infrared temperature measuring devices 200, the area covered by the light receiver 120 and the multiple infrared temperature measuring devices 200 can be a certain radius of the wafer 300. That is, the light receiver 120 and the multiple infrared temperature measuring devices 200 are distributed sequentially and at intervals along a line segment containing a certain radius of the wafer 300. More intuitively, the infrared temperature measuring device 200 located at the outermost edge of the first side of the light receiver 120 can be located above the center of the wafer 300, while the infrared temperature measuring device 200 located at the outermost edge of the second side of the light receiver 120 can be located above the outer edge of the wafer 300. In this case, the comprehensiveness of the temperature field distribution of the wafer 300 obtained by using multiple infrared temperature measuring devices 200 is relatively higher.

[0066] As described above, the emissivity detection device 100 includes a light emitter 110 and a light receiver 120. The light emitted by the light emitter 110 and reflected on the wafer 300 needs to be received by the light receiver 120 to measure the reflectivity of the wafer 300 to light of a first wavelength. Therefore, during the arrangement of the light emitter 110 and the light receiver 120 of the emissivity detection device 100, it is necessary to ensure that the incident angle of the light emitter 110 is equal to the receiving angle of the light receiver 120. In other words, the straight line of the light emitted by the light emitter 110 should be symmetrical to the straight line of the light received by the light receiver 120.

[0067] To further improve the receiving accuracy of the optical receiver 120, in one specific embodiment of this application, the angle between the line of light emitted by the optical transmitter 110 and the axis of the wafer 300, and the angle between the line of light received by the optical receiver 120 and the axis of the wafer 300, can both be less than 25°. In this case, the adverse effects on the receiving accuracy of the optical receiver 120 caused by refraction or scattering of light emitted by the optical transmitter 110 on the wafer 300 can be minimized.

[0068] Similarly, regarding the orientation of the auxiliary light source 130, it is also necessary to make the straight line of the light emitted by the auxiliary light source 130 collinear with the straight line of the light received by the light receiver 120, so as to ensure that the light receiver 120 receives the light emitted by the auxiliary light source 130 and passes through the wafer 300 with relatively high accuracy.

[0069] As described above, the carrier device 500 is installed in the cavity 400, and the emissivity detection device 100 and the infrared temperature measuring device 200 are also installed in the cavity 400. The light emitter 110, the light receiver 120, and the infrared temperature measuring device 200 can all be located above the carrier device 500, and the auxiliary light source 130 can be located below the carrier device 500. Furthermore, to minimize the adverse effects of the emissivity detection device 100 and the infrared temperature measuring device 200 on the process environment within the cavity 400, observation windows can be provided at the top and bottom of the cavity 400. The light emitter 110, the light receiver 120, and the infrared temperature measuring device 200 are all positioned opposite the observation window at the top of the cavity 400, and the auxiliary light source 130 is positioned opposite the observation window at the bottom of the cavity 400.

[0070] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order shown or discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0071] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A method of detecting a temperature of a wafer in a reaction chamber, the method comprising: The reaction chamber comprises a cavity, a heating lamp, an infrared temperature measuring device and an emissivity detection device; wherein the heating lamp is used for heating the wafer, the working wavelength of the emissivity detection device is a first wavelength, the working wavelength of the infrared temperature measuring device is a second wavelength, the second wavelength is within the wavelength range of the heating light emitted by the heating lamp, and the first wavelength is outside the central wavelength of the heating light; when the wafer is heated by the heating lamp, the method comprises: acquiring, by the emissivity detection device, a first emissivity of the wafer corresponding to light of the first wavelength; determining, according to the first emissivity, a second emissivity of the wafer corresponding to light of the second wavelength; the infrared temperature measuring device detects the temperature of the wafer based on the second emissivity.

2. The method of claim 1, wherein, The method further comprises: acquiring, in advance, a corresponding relationship between the first emissivity of the wafer corresponding to light of the first wavelength and the second emissivity of the wafer corresponding to light of the second wavelength at different temperatures; determining the second emissivity of the wafer based on the first emissivity and the corresponding relationship.

3. The method of claim 2, wherein, The method further comprises: determining the emissivity of the wafer corresponding to light of the second wavelength at different temperatures based on Planck's law and the energy of the light of the first wavelength and the second wavelength radiated by the wafer at different temperatures, and the first emissivity of the wafer at different temperatures, to acquire the corresponding relationship between the first emissivity and the second emissivity.

4. The method according to any one of claims 1 to 3, characterized in that, The wafer has a light-transmitting state and a non-light-transmitting state, and the method of acquiring, by the emissivity detection device, the first emissivity of the wafer corresponding to light of the first wavelength comprises the following steps: when the wafer is in the non-light-transmitting state, determining the first emissivity of the wafer corresponding to light of the first wavelength based on the reflectivity of the light of the first wavelength after being reflected by the wafer; when the wafer is in the light-transmitting state, determining the first emissivity of the wafer corresponding to light of the first wavelength based on the reflectivity of the light of the first wavelength after being reflected by the wafer and the transmissivity of the light of the first wavelength after being transmitted by the wafer.

5. The method according to any one of claims 1 to 3, characterized in that, The emissivity detection device comprises a light emitter, a light receiver and an auxiliary light source; wherein the light emitter, the light receiver and the infrared temperature measuring device are located on a first side of the wafer, and the auxiliary light source is located on a second side of the wafer; the light emitter and the auxiliary light source can both emit light of the first wavelength, and the light receiver is used to receive light emitted by the auxiliary light source and transmitted through the wafer, or the light receiver is used to receive light emitted by the light emitter and reflected by the wafer; acquiring, by the emissivity detection device, the first emissivity of the wafer corresponding to light of the first wavelength comprises: In the case that the wafer is in the non-transmissive state, the light emitter is controlled to emit light of the first wavelength, and the light receiver is controlled to receive light reflected from the wafer, so as to determine reflectivity of the wafer corresponding to light of the first wavelength, and based on the reflectivity, a first emissivity of the wafer corresponding to light of the first wavelength in the non-transmissive state is determined; In the case that the wafer is in the transmissive state, the auxiliary light source is controlled to emit light of the first wavelength, and the light receiver is controlled to receive light transmitted through the wafer, so as to determine transmissivity of the wafer corresponding to light of the first wavelength, and based on the reflectivity and the transmissivity, a first emissivity of the wafer corresponding to light of the first wavelength in the transmissive state is determined.

6. A reaction chamber characterized by, The apparatus comprises a controller, a cavity, a heating lamp, an infrared temperature measuring device and an emissivity detection device; wherein, The heating lamp, the infrared temperature measuring device and the emissivity detection device are all installed in the cavity, a wafer can be arranged in the cavity, and the heating lamp is used for heating the wafer, the working wavelength of the emissivity detection device is a first wavelength, and the emissivity detection device is used for detecting a first emissivity of the wafer corresponding to light of the first wavelength, the working wavelength of the infrared temperature measuring device is a second wavelength, the infrared temperature measuring device is used for detecting a temperature of the wafer based on a second emissivity of the wafer corresponding to light of the second wavelength determined by the first emissivity, the second wavelength is within a central wavelength range of the heating lamp, and the first wavelength is outside the central wavelength range of the heating lamp; The controller comprises a processor and a memory, the memory stores a computer program, and the computer program is executed by the processor to implement the method in any one of claims 1-5.

7. The reaction chamber of claim 6, wherein, The number of the infrared temperature measuring devices is multiple, the emissivity detection device comprises a light receiver, the multiple infrared temperature measuring devices are all arranged on the same side of the wafer as the light receiver, and the light receiver and the multiple infrared temperature measuring devices are sequentially and spacedly distributed along a radial direction of the wafer.

8. The reaction chamber of claim 6, wherein, The emissivity detection device comprises a light emitter and an auxiliary light source, and the light emitted by the light emitter and the auxiliary light source has an incident point on the wafer in an area between two-thirds and one-third of a radius of the wafer.

9. The reaction chamber of claim 8, wherein, The light emitted by the light emitter and the auxiliary light source has an incident point on the wafer at one-half of the radius of the wafer.

10. The reaction chamber of claim 6, wherein, The emissivity detection device comprises a light emitter and a light receiver, and an angle between a straight line where light emitted by the light emitter is located and an axis of the wafer and an angle between a straight line where light received by the light receiver is located and the axis of the wafer are both less than 25°.

11. The reaction chamber of claim 6, wherein, The central wavelength of the heating lamp is 1000 nm, the first wavelength is greater than 1000 nm, the second wavelength is an infrared wavelength, and is less than 800 nm.

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