Photonic crystal-surface emitting element, electronic apparatus, and method for manufacturing photonic crystal-surface emitting element

Abstract

Provided is a photonic crystal-surface emitting element in which the characteristics and productivity are improved by a laminated structure.　A photonic crystal-surface emitting element (10) according to the present technology comprises: a first structure (ST1) including a substrate (101); and a second structure (ST2) disposed on the first structure (ST1), the second structure (ST2) including a layered structure (LS) in which at least a photonic crystal layer (105) and an active layer (104) are layered. A bonding interface (BI) is present between the first structure (ST1) and the second structure (ST2). According to the present technology, it is possible to provide a photonic crystal-surface emitting element in which the characteristics and productivity are improved by a laminated structure.

Description

Photonic crystal surface light emitting device, electronic device, and method for manufacturing photonic crystal surface light emitting device

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a photonic crystal surface light emitting device, an electronic device, and a method for manufacturing the photonic crystal surface light emitting device.

[0002] 2. Description of the Related Art Conventionally, surface light emitting devices capable of obtaining surface light emission output, such as vertical cavity surface emitting lasers (VCSELs) and light emitting diodes (LEDs), have been known.

[0003] For example, Patent Document 1 discloses a surface light emitting device (VCSEL, RCLED (Resonant Cavity Light Emitting Diode), LED) that has high performance achieved by a bonding structure.

[0004] Meanwhile, in recent years, photonic crystal surface light emitting devices have been attracting attention as surface light emitting devices having photonic crystals.

[0005] Photonic crystal surface-emitting lasers (PCSELs), which are representative of photonic crystal surface-emitting devices, have excellent functions not found in existing surface-emitting lasers, such as the ability to emit highly focused light in a desired direction without using optical elements, and the ability to emit coherent light over a large area. Research and development is therefore underway to further improve the characteristics and productivity of PCSELs.

[0006] Japanese Patent Application Laid-Open No. 2003-17806

[0007] However, a photonic crystal surface light emitting device that achieves improved characteristics and productivity through a bonded structure has not yet been proposed.

[0008] Therefore, a main object of the present technology is to provide a photonic crystal surface light emitting device with improved characteristics and productivity achieved by using a bonded structure.

[0009] The present technology provides a photonic crystal surface light-emitting device comprising: a first structure including a substrate; and a second structure disposed on the first structure, the second structure including a stacked structure in which at least a photonic crystal layer and an active layer are stacked; wherein a bonding interface exists between the first structure and the second structure. The first structure and the stacked structure may be made of the same material. The first structure and the stacked structure may be made of different materials. The substrate and the second structure may be bonded. The first structure and the stacked structure may be bonded. The stacked structure may have a semiconductor layer stacked with the photonic crystal layer and the active layer and bonded to the first structure, and the second structure may include an electrode in contact with the semiconductor layer. The first structure may include a semiconductor layer stacked with the substrate and bonded to the second structure. The second structure may include first and second electrodes for applying current to the stacked structure. The stacked structure may include first and second clad layers sandwiching a light-emitting section including the photonic crystal layer and the active layer. The laminated structure may include a reflector on a side of the light-emitting section including the photonic crystal layer and the active layer opposite to the first structure side. The laminated structure may include a reflector on a side of the light-emitting section including the photonic crystal layer and the active layer opposite to the first structure side. The second structure may include an electrode on a side of the laminated structure opposite to the first structure side, and the laminated structure may include a semiconductor layer in contact with the electrode. The junction interface may include an amorphous layer. The substrate may be a lightly doped semiconductor substrate or a semi-insulating substrate. The second structure may have a mesa including at least a portion of the laminated structure. The photonic crystal surface light-emitting device may emit light on a side of the first structure opposite to the second structure side. The present technology also provides an electronic device including a photonic crystal surface light-emitting device including: a first structure including a substrate; and a second structure disposed on the first structure, the second structure including a laminated structure in which at least a photonic crystal layer and an active layer are stacked; wherein a junction interface exists between the first structure and the second structure.The electronic device may further include a mounting substrate on which the photonic crystal surface light emitting device is mounted. The present technology also provides a method for manufacturing a photonic crystal surface light emitting device, the method comprising: stacking a plurality of layers, including a base material of a photonic crystal layer and an active layer, on a first substrate to generate a stack; attaching a second substrate to a surface of the stack opposite to the first substrate; removing at least the first substrate from the stack to which the second substrate is attached to expose the base material; and processing the base material to form the photonic crystal layer. In the forming step, the photonic crystal layer may be formed on the base material by nanoimprint lithography.

[0010] FIG. 2 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 1 of an embodiment of the present technology; FIG. 3 is a plan view of a photonic crystal surface light emitting device according to Example 1 of an embodiment of the present technology; FIG. 4 is a flowchart for describing an example of a method for manufacturing the photonic crystal surface light emitting device of FIG. 1; FIG. 5 is a cross-sectional view of each process of an example of a method for manufacturing the photonic crystal surface light emitting device of FIG. 1; FIG. 6 is a cross-sectional view of each process of an example of a method for manufacturing the photonic crystal surface light emitting device of FIG. 1; FIG. 7 is a cross-sectional view of each process of an example of a method for manufacturing the photonic crystal surface light emitting device of FIG. 1; FIG. 8 is a cross-sectional view of each process of an example of a method for manufacturing the photonic crystal surface light emitting device of FIG. 1; FIG. 9 is a cross-sectional view of each process of an example of a method for manufacturing the photonic crystal surface light emitting device of FIG. 1; FIG. 11 is a cross-sectional view of each process of an example of a method for manufacturing the photonic crystal surface light emitting device of FIG. 1; FIG. 2 is a cross-sectional view of each step in an example of a manufacturing method of the photonic crystal surface light emitting device of FIG. 1. FIG. 2 is a cross-sectional view of each step in an example of a manufacturing method of the photonic crystal surface light emitting device of FIG. 1. FIG. 3 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 2 of an embodiment of the present technology. FIG. 4 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 4 of an embodiment of the present technology. FIG. 5 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 6 of an embodiment of the present technology. FIG. 6 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 7 of an embodiment of the present technology. FIG. 7 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 8 of an embodiment of the present technology. FIG. 8 is a plan view of a photonic crystal surface light emitting device according to Example 8 of an embodiment of the present technology. FIG. 9 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 9 of an embodiment of the present technology.FIG. 1 is a plan view of a photonic crystal surface light emitting device according to Example 9 of an embodiment of the present technology. FIG. 2 is a cross-sectional view of a photonic crystal surface light emitting device array according to Example 10 of an embodiment of the present technology. FIG. 3 is a cross-sectional view of a light emitting device according to Example 11 of an embodiment of the present technology. FIG. 4 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 12 of an embodiment of the present technology. FIG. 5 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 13 of an embodiment of the present technology. FIG. 6 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 14 of an embodiment of the present technology. FIG. 7 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 15 of an embodiment of the present technology. FIG. 8 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 16 of an embodiment of the present technology. FIG. 9 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 17 of an embodiment of the present technology. FIG. 10 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 19 of an embodiment of the present technology. FIG. 11 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 19.5 of an embodiment of the present technology. FIG. 12 is a cross-sectional view of a photonic crystal surface light emitting device according to Example 19. Fig. 1 is a cross-sectional view of a photonic crystal surface light-emitting device according to Example 22 of an embodiment of the present technology. Fig. 2 is a cross-sectional view of a light receiving and emitting device according to Example 23 of an embodiment of the present technology. Fig. 3 is a cross-sectional view of a photonic crystal surface light-emitting element according to Example 24 of an embodiment of the present technology. Fig. 4 is a diagram showing an example application of the photonic crystal surface light-emitting device of Fig. 1 to a distance measurement device. Fig. 5 is a block diagram showing an example of a schematic configuration of a vehicle control system. Fig. 6 is an explanatory diagram showing an example of an installation position of a distance measurement device.

[0011] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configurations will be denoted by the same reference numerals, and redundant description will be omitted. The embodiments described below are representative embodiments of the present technology, and are not intended to narrow the scope of the present technology. Even when this specification describes that the photonic crystal surface light-emitting device, electronic device, and photonic crystal surface light-emitting device manufacturing method according to the present technology achieve multiple effects, it is sufficient that the photonic crystal surface light-emitting device, electronic device, and photonic crystal surface light-emitting device according to the present technology achieve at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also be achieved.

[0012] The description will be made in the following order: 0. Introduction 1. Photonic crystal surface light-emitting device according to Example 1 of an embodiment of the present technology 2. Photonic crystal surface light-emitting device according to Example 2 of an embodiment of the present technology 3. Photonic crystal surface light-emitting device according to Example 3 of an embodiment of the present technology 4. Photonic crystal surface light-emitting device according to Example 4 of an embodiment of the present technology 5. Photonic crystal surface light-emitting device according to Example 5 of an embodiment of the present technology 6. Photonic crystal surface light-emitting device according to Example 6 of an embodiment of the present technology 7. Photonic crystal surface light-emitting device according to Example 7 of an embodiment of the present technology 8. Photonic crystal surface light-emitting device according to Example 8 of an embodiment of the present technology 9. Photonic crystal surface light-emitting device according to Example 9 of an embodiment of the present technology 10. Photonic crystal surface light-emitting device array according to Example 10 of an embodiment of the present technology 11. Light-emitting device according to Example 11 of an embodiment of the present technology 12. Photonic crystal surface light-emitting device according to Example 12 of an embodiment of the present technology 13. Photonic crystal surface light-emitting device according to Example 13 of an embodiment of the present technology 14. Photonic crystal surface light emitting device according to Example 14 of an embodiment of the present technology 15. Photonic crystal surface light emitting device according to Example 15 of an embodiment of the present technology 16. Photonic crystal surface light emitting device according to Example 16 of an embodiment of the present technology 17. Photonic crystal surface light emitting device according to Example 17 of an embodiment of the present technology 18. Photonic crystal surface light emitting device according to Example 18 of an embodiment of the present technology 19. Photonic crystal surface light emitting device according to Example 19 of an embodiment of the present technology 19.5. Photonic crystal surface light emitting device according to Example 19.5 of an embodiment of the present technology 20. Light emitting and receiving device according to Example 20 of an embodiment of the present technology 21. Photonic crystal surface light emitting device according to Example 21 of an embodiment of the present technology 22. Photonic crystal surface light emitting device according to Example 22 of an embodiment of the present technology 23. Light emitting and receiving device according to Example 23 of an embodiment of the present technology 24. Photonic crystal surface light emitting device according to Example 24 of an embodiment of the present technology 25. Modification of the present technology 26. Application to electronic devices 27. Example of applying a photonic crystal surface light emitting device to a distance measurement device 28. Example of mounting a distance measurement device on a moving object

[0013] <0. Introduction> In recent years, photonic crystal surface-emitting devices such as photonic crystal surface-emitting lasers (PCSELs) having photonic crystals have been attracting attention.

[0014] For example, a photonic crystal surface emitting laser (PCSEL) is a surface emitting laser that has a photonic crystal near the active layer.

[0015] PCSELs are light-emitting devices that have seen remarkable application in recent years in industries such as distance sensors and optical communications, and have the general advantages of semiconductor lasers, such as small size and long life, similar to those of VCSELs (Vertical Surface Emitting Lasers).

[0016] Furthermore, PCSELs have unique features that are not available in existing surface-emitting lasers, such as the ability to emit highly focused light in a desired direction without using optical elements such as lenses or diffraction gratings, and the ability to emit coherent light over a large area.

[0017] On the other hand, in Patent Document 1 (JP 2003-17806 A), a substrate bonding structure is used for a vertical cavity surface emitting laser (VCSEL) or a resonant cavity light emitting diode (RCLED) in the light emitting element portion. Specifically, in Patent Document 1, the substrate on the light extraction side is made a transparent substrate to improve characteristics.

[0018] Furthermore, with regard to the formation of photonic crystals, fine patterning using electron beam exposure on semiconductor substrates and regrowth techniques using MOCVD are being studied.

[0019] Nanoimprint lithography (NIL) has attracted attention as a method suitable for mass production due to its high throughput for patterning with the required accuracy of several tens of nanometers. While electron beam lithography has been widely used in conventional research, reducing the cost of laser chips requires processing large-diameter wafers, and it is predicted that the throughput of electron beam lithography will not be sufficient. By using NIL, it is possible to significantly increase the number of wafers processed per hour. However, a challenge with NIL is the requirement for high flatness (planarity) on the wafer surface, which is due to the physical contact between the wafer and mold.

[0020] Even with the current market-standard crystal growth of compound semiconductors, unevenness is observed on the wafer surface after crystal growth. It is believed to be caused by abnormal growth, but it cannot be completely eliminated, and it is expected to cause problems with NIL. Specifically, this can lead to poor patterning (leading to reduced yield) due to the mold not fully adhering to the wafer during stamping, and the mold's lifespan is shortened due to stamping on an uneven wafer. For this reason, NIL requires that the surface of the wafer undergoing patterning be extremely flat.

[0021] Thus, forming a photonic crystal using NIL leads to improved productivity, but requires high wafer flatness. As described above, low wafer flatness leads to a decrease in yield.

[0022] Furthermore, improvements in the properties of photonic crystal surface light emitting devices (for example, improvements in light extraction efficiency and cooling efficiency) are also expected.

[0023] Therefore, after extensive research, the inventors have developed a photonic crystal surface light emitting device according to the present technology, which is a photonic crystal surface light emitting device that can achieve improved characteristics and productivity through a bonded structure. The photonic crystal surface light emitting device according to the present technology can also be applied to multi-function devices (e.g., light emitting and receiving devices, light emitting and receiving devices with built-in drivers, distance measuring devices, communication devices, etc.).

[0024] Hereinafter, a photonic crystal surface light-emitting device according to an embodiment of the present technology will be described in detail using several examples. In the following, in cross-sectional views such as FIG. 1 , the upper side will be referred to as "up" and the lower side will be referred to as "down" as appropriate.

[0025] 1. Photonic crystal surface light emitting device according to example 1 of an embodiment of the present technology> Fig. 1 is a cross-sectional view of a photonic crystal surface light emitting device 10 according to example 1 of an embodiment of the present technology. Fig. 2 is a plan view of the photonic crystal surface light emitting device 10. Fig. 1 is a cross-sectional view taken along line 1-1 of Fig. 2.

[0026] 1 , a photonic crystal surface light emitting device 10 according to Example 1 of an embodiment of the present technology includes a first structure ST1 including a substrate 101, and a second structure ST2 disposed on the first structure ST1, the second structure ST2 including a stacked structure LS in which at least a photonic crystal layer 105 and an active layer 104 are stacked. Hereinafter, the direction in which the photonic crystal layer 105 and the active layer 104 are stacked (the vertical direction) will also be referred to as the "stacking direction."

[0027] An example of the photonic crystal surface light emitting device 10 is a photonic crystal-surface emitting laser (PCSEL). An example of the photonic crystal surface light emitting device 10 is a rear-surface emitting photonic crystal surface emitting laser.

[0028] The photonic crystal surface light emitting element 10 is, for example, a photonic crystal surface emitting laser that is flip-chip mounted (junction-down mounted) on a mounting substrate. The mounting substrate is, for example, a driver (drive substrate) or a wiring substrate electrically connected to the driver.

[0029] The substrate 101 is a light extraction substrate, and the rear surface (lower surface) of the substrate 101 serves as the light output surface.

[0030] In the stacked structure LS, as an example, a resonator (light emitting portion) is configured including an active layer 104 and a photonic crystal layer 105 stacked on each other (for example, arranged close to each other in the stacking direction). Here, the photonic crystal layer 105 is arranged above the active layer 104, but the photonic crystal layer 105 may also be arranged below the active layer 104.

[0031] The laminated structure LS has first and second cladding layers 103 and 106 that sandwich a resonator including an active layer 104 and a photonic crystal layer 105. The first cladding layer 103 is disposed below the resonator, and the second cladding layer 106 is disposed above the resonator. The laminated structure LS further has a first contact layer 102 disposed on the side of the first cladding layer 103 opposite to the resonator side (lower side), a reflecting mirror 107 disposed on the side of the second cladding layer 106 opposite to the resonator side (upper side), and a second contact layer 108 disposed on the side of the reflecting mirror 107 opposite to the resonator side (upper side).

[0032] That is, in the stacked structure LS, a first contact layer 102, a first cladding layer 103, an active layer 104, a photonic crystal layer 105, a second cladding layer 106, a reflecting mirror 107, and a second contact layer 108 are arranged in this order on a substrate 101.

[0033] The photonic crystal surface light emitting element 10 emits laser light to the side of the first structure ST1 opposite to the second structure ST2 side (the lower side, the back surface side of the substrate 101). An AR (anti-reflection) film 113 is provided on the back surface (lower surface) of the substrate 101. The AR film 113 is a component of the first structure ST1. Note that the AR film 113 is provided to improve light utilization efficiency and is not essential.

[0034] The second structure ST2 has a mesa M including at least a part (for example, a portion) of the stacked structure LS. Here, the mesa M is configured to include a first cladding layer 103, an active layer 104, a photonic crystal layer 105, a second cladding layer 106, a reflecting mirror 107, and a second contact layer 108.

[0035] The mesa M and the first contact layer 102 are covered with an insulating film 109. For example, the insulating film 109 does not cover the center of the top (second contact layer 108) of the mesa M, and an anode electrode 110 (p-side electrode) is provided on this center. For example, the insulating film 109 does not cover the peripheral portion of the first contact layer 102 around the mesa M (e.g., the portion surrounding the mesa M in a plan view), and a surrounding cathode electrode 111 (n-side electrode) is provided on this portion. That is, the photonic crystal surface light emitting element 10 has an intra-cavity structure in which the anode electrode 110 and the cathode electrode 111 are provided on the same surface (top surface) of the substrate 101. The anode electrode 110 and the cathode electrode 111 are first and second electrodes, respectively, for passing current through the stacked structure LS (for injecting current into the active layer 104).

[0036] As an example, the second structure ST2 has a cathode wiring 112 that is a wiring for pulling up the cathode electrode 111. One end (lower end) of the cathode wiring 112 is in contact with the cathode electrode 111, the other end (upper end) is provided on the corner of the top of the mesa M via the insulating film 109, and a middle portion is provided on the side surface of the mesa M via the insulating film 109.

[0037] (Substrate) The substrate 101 is, for example, a semiconductor substrate containing impurities, a semi-insulating substrate (for example, a semiconductor substrate containing no impurities), or the like. Here, the substrate 101 is made of GaAs. In order to reduce light absorption, the substrate 101 is preferably made of, for example, lightly doped GaAs (n-GaAs or p-GaAs), SI (Semi-Insulating)-GaAs, or the like. The substrate 101 has an impurity concentration of 5E17 cm -3 (5 x 10 17 cm -3 ) or less. Furthermore, the substrate 101 is preferably transparent to the emission wavelength of the active layer 104.

[0038] (AR Film) The AR film 113 has, for example, a laminated structure in which a plurality of dielectric films (for example, SiO2 film, SiN film, SiON film, etc.) are laminated.

[0039] (First Contact Layer) The first contact layer 102 is, for example, an Al layer of a first conductivity type (for example, n-type). x0 Ga 1-x0 The first contact layer 102 is made of, for example, n-GaAs (0≦x0<1). The first contact layer 102 contains an n-type impurity such as silicon (Si). The first contact layer 102 not only makes an ohmic contact between the first cladding layer 103 and the cathode electrode 111, but also functions as a current diffusion layer that allows current to reach the center of the stacked structure LS.

[0040] (First Cladding Layer) The first cladding layer 103 is, for example, an Al layer of a first conductivity type (for example, n-type). x1 Ga 1-x1 The first cladding layer 103 is made of As (0≦x1<1). The cladding layer is also called a “spacer layer.” The first cladding layer 103 contains an n-type impurity such as silicon (Si).

[0041] (Active Layer) The active layer 104 has, for example, a quantum well structure including a barrier layer and a well layer made of a GaAs-based compound semiconductor. x2 Ga 1-x2 A well layer made of As (0<x2<1) and undoped In x3 Ga 1-x3 The active layer 104 has a multiple quantum well structure (MQW structure) in which barrier layers made of As (0<x3<1) are alternately stacked. Instead of the multiple quantum well structure, the active layer 104 may have a single quantum well structure (QW structure), a quantum dot structure, a quantum wire structure, or the like. The emission wavelength of the active layer 104 is, for example, 935 nm. The active layer is also called an "emitting layer."

[0042] (Photonic Crystal Layer) The photonic crystal layer 105 provides resonance and diffraction effects due to the photonic crystal to the light emitted from the active layer 104 adjacent in the stacking direction.

[0043] As an example, the photonic crystal layer 105 has a modified refractive index periodic structure 105a in which modified refractive index areas are periodically arranged (e.g., in a two-dimensional lattice pattern) in a plate-shaped base material 105m (see FIG. 4 ). The modified refractive index periodic structure 105a generates a periodic refractive index distribution in the photonic crystal layer 105. In the photonic crystal layer 105, the period (the spacing between lattice points, the lattice constant) of the modified refractive index areas is, for example, the same as the emission wavelength of the active layer 104. The base material 105m is made of, for example, GaAs, but is not limited to, GaAs. The modified refractive index areas are, for example, holes (air or vacuum). Here, the modified refractive index periodic structure 105a is provided at a position corresponding to the entire area within the plane of the active layer 104, but may also be provided at a position corresponding to a portion within the plane of the active layer 104.

[0044] Due to the presence of the periodic refractive index distribution described above, light of a specific wavelength (e.g., the emission wavelength) forms a two-dimensional standing wave state in a specific direction within the photonic crystal plane within the photonic crystal layer 105. In the photonic crystal layer 105, diffraction occurs not only in directions parallel to the photonic crystal plane but also in directions perpendicular thereto, allowing a beam with a narrow exit angle to be emitted in a direction intersecting the in-plane direction (e.g., perpendicular to the plane), thereby providing a surface emission output.

[0045] The photonic crystal layer 105 can have functions such as narrow beam width and multi-point emission switching.

[0046] (Second Cladding Layer) The second cladding layer 106 is, for example, an AlN layer of a second conductivity type (for example, p-type). x4 Ga 1-x4 The second cladding layer 106 is made of As (0≦x4<1). The cladding layer is also called a “spacer layer.” The second cladding layer 106 contains a p-type impurity such as carbon (C).

[0047] (Reflector) The reflector 107 is provided to reflect light emitted from the active layer 104 to the opposite side (upper side) from the substrate 101 toward the substrate 101 side (lower side) and use the reflected light as emitted light (to improve light utilization efficiency). In this way, the reflector 107 is provided to improve efficiency and is not essential.

[0048] The reflecting mirror 107 is, for example, a semiconductor multilayer reflecting mirror. A multilayer reflecting mirror is also called a distributed Bragg reflector. More specifically, the reflecting mirror 107 is, for example, a second conductivity type (for example, p-type) semiconductor multilayer reflecting mirror, and has a structure in which a plurality of types (for example, two types) of semiconductor layers having different refractive indices are alternately stacked with an optical thickness of ¼ wavelength of the emission wavelength. Each refractive index layer of the reflecting mirror 107 is made of an AlGaAs-based compound semiconductor of the second conductivity type (for example, p-type). Specifically, the reflecting mirror 107 has a low refractive index layer made of, for example, p-Al x5 Ga 1-x5 As (0<x5<1), and the high refractive index layer is, for example, p-Al x6 Ga 1-X6 As (0≦x6<x5).

[0049] (Second Contact Layer) The second contact layer 108 is, for example, an Al layer of a second conductivity type (for example, p-type). x7 Ga 1-x7 The second contact layer 108 is made of As (0≦x0<1), for example, p-GaAs. The second contact layer 108 contains a p-type impurity such as carbon (C). The second contact layer 108 is a layer for making ohmic contact between the reflecting mirror 107 and the anode electrode 110.

[0050] (Insulating Film) The insulating film 109 is made of a dielectric material such as SiN, SiO2, SiON, etc. In particular, when the insulating film 109 is made of SiN, it contributes to suppressing the penetration of moisture from the outside.

[0051] (Anode Electrode) The anode electrode 110 serving as the first electrode is, for example, configured to include a non-alloy metal film. Specifically, the anode electrode 110 has a laminated structure in which, for example, a Ti layer and an Au layer are laminated in this order from the second contact layer 108 side. Note that the anode electrode 110 may further have a Pt layer laminated on the Au layer to improve solderability. The anode electrode 110 is electrically connected to an anode terminal of the mounting substrate via a bump.

[0052] (Cathode Electrode) The cathode electrode 111 serving as the second electrode is, for example, configured to contain an alloy. Specifically, the cathode electrode 111 has a layered structure in which, for example, an AuGe layer, a Ni layer, and an Au layer are layered in this order from the first contact layer 102 side. The cathode electrode 111 is electrically connected to a cathode terminal of the mounting substrate via a bump.

[0053] (Cathode Wiring) The cathode wiring 112 is made of, for example, Au plating, Ag plating, Al plating, etc. The thickness of the cathode wiring 112 is preferably a thickness that can sufficiently suppress voltage drop.

[0054] (Bonding Between First Structure and Stacked Structure) A bonding interface BI exists between the first structure ST1 and the second structure ST2.

[0055] In more detail, the first structure ST1 (more specifically, the substrate 101) and the second structure ST2 (more specifically, the stacked structure LS, more specifically, the first contact layer 102) are bonded together, and a bonding interface BI exists between the substrate 101 and the stacked structure LS (more specifically, the first contact layer 102).

[0056] As is clear from the above description, the first structure ST1 and the stacked structure LS are made of the same material, for example, a GaAs-based compound semiconductor (e.g., a compound semiconductor lattice-matched to GaAs, such as GaAs, AlGaAs, or AlAs). This allows the bonded interface BI to be maintained in a good condition and the bond strength to be increased. As an example, the bonded interface BI may include an amorphous layer. It has been confirmed that when two layers are bonded by surface activated bonding (SAB), an amorphous layer is included at the bonded interface. Surface activated bonding is also called "room-temperature bonding."

[0057] <<Operation of Photonic Crystal Surface Light Emitting Device>> The operation of the photonic crystal surface light emitting device 10 will be described below. A current flows from the anode side of the driver into the stacked structure LS via the anode electrode 110 and is injected into the active layer 104 via the second contact layer 108, the reflecting mirror 107, the second cladding layer 106, and the photonic crystal layer 105, in this order. At this time, the active layer 104 emits light, and the light forms a standing wave in the in-plane direction within the photonic crystal layer 105. When the resonance condition is satisfied, light is emitted from the photonic crystal layer 105 toward the substrate 101 (upper side) and the opposite side from the substrate 101 (lower side). The light emitted toward the substrate 101 is directly emitted as laser light from the back surface of the substrate 101. The light emitted toward the opposite side from the substrate 101 is reflected by the reflecting mirror 107 toward the substrate 101 and emitted as laser light from the back surface of the substrate 101. The current that passes through the active layer 104 flows out to the cathode side of the driver via the first cladding layer 103, the first contact layer 102 (a lateral current path is formed in the first contact layer 102), and the cathode electrode 111 in this order.

[0058] <<Method for Manufacturing Photonic Crystal Surface Emitting Device>> A method for manufacturing photonic crystal surface emitting device 10 will be described below with reference to the flowchart in Fig. 3. The overall flow is as follows: first, a semiconductor manufacturing method using semiconductor manufacturing equipment is used to simultaneously produce multiple photonic crystal surface emitting devices 10 on a single wafer (hereinafter referred to as "substrate 101" for convenience), which is the base material for substrate 101. Next, the multiple photonic crystal surface emitting devices 10, which are connected together, are separated from each other by dicing, thereby obtaining chip-shaped photonic crystal surface emitting devices 10.

[0059] In the first step S1, a stack is produced (see FIG. 4). Specifically, an etching stop layer ESL, a base material 105m of the photonic crystal layer 105, an active layer 104, a first cladding layer 103, and a first contact layer 102 are stacked in this order on a growth substrate GS (e.g., an n-GaAs substrate) by an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition). The material for the etching stop layer ESL is preferably a material, such as InGaP, that has etching selectivity with GaAs. As raw materials for the compound semiconductor, for example, methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn), and arsine (AsH) gas are used, as raw materials for the donor impurities, for example, disilane (SiH), and as raw materials for the acceptor impurities, for example, carbon tetrabromide (CBr).

[0060] In the next step S2, the substrate 101 is attached (see FIGS. 5 and 6). Specifically, the substrate 101 (preferably one with high flatness) is bonded to the top layer (first contact layer 102) of the stack by surface activated bonding (room temperature bonding). Before bonding, it is desirable to perform chemical mechanical polishing (CMP) on the top surface of the first contact layer 102 as needed. After bonding, it is desirable to perform annealing at a high temperature. This can increase the bonding strength. By this surface activated bonding, an amorphous layer is formed at the bonding interface BI.

[0061] In the next step S3, the growth substrate GS is removed (peeled off) (see FIG. 7). Specifically, selective etching is performed from the growth substrate GS side of the laminate to which the substrate 101 is attached, and the etching is stopped by the etching stop layer ESL.

[0062] In the next step S4, the etching stop layer ESL is removed (peeled off) (see FIG. 8 ). Specifically, selective etching is performed from the etching stop layer ESL side of the laminate, and the etching is stopped at base material 105m of photonic crystal layer 105. This makes it possible to improve the flatness of the exposed surface of base material 105m of photonic crystal layer 105.

[0063] In the next step S5, the photonic crystal layer 105 is formed (see FIGS. 9 and 10 ). Specifically, the stack is inverted so that the base material 105m of the photonic crystal layer 105 becomes the uppermost layer (see FIG. 9 ), and the base material 105m is finely patterned to form the modified refractive index periodic structure 105a. Specific examples of fine patterning include photolithography and nanoimprint lithography.

[0064] When photolithography, for example, is used for fine patterning, a resist pattern for forming the modified refractive index periodic structure 105a of the photonic crystal layer 105 is formed on the upper surface of the base material 105m of the photonic crystal layer 105 by photolithography. The base material 105m is etched using the resist pattern as a mask. At this time, it is preferable to use RIE (Reactive Ion Etching) using a Cl-based gas, for example. The resist pattern is then removed. Since the substrate 101 is originally highly flat and bonded as a single unit, it has almost no irregularities, allowing the photolithography process to be performed with high precision, thereby achieving highly accurate patterning.

[0065] When nanoimprint lithography is used for fine patterning, for example, a UV-curable resin is applied to the base material 105m by inkjet printing, and a mold (also called a plate, metal mold, stamper, or template) having a modified refractive index periodic structure is stamped (pressed) onto the UV-curable resin. The UV-curable resin is then cured by irradiating it with ultraviolet light, transferring the modified refractive index periodic structure, and the mold is then released to form a resin pattern. Since the substrate 101 is originally highly flat and bonded as a single unit, it is free of irregularities, allowing the mold to be sufficiently adhered to the substrate 101 during stamping. This prevents patterning defects and a shortened mold life that can occur when stamping on an uneven wafer. The base material 105m is then etched using the resin pattern as a mask, resulting in a photonic crystal layer 105 having a modified refractive index periodic structure 105a formed in the base material 105m.

[0066] In the next step S6, second cladding layer 106, reflecting mirror 107, and second contact layer 108 are laminated (see FIG. 11 ). Specifically, second cladding layer 106, reflecting mirror 107, and contact layer 108 are laminated in this order by another epitaxial growth on the laminate on which photonic crystal layer 105 has been formed.

[0067] In the next step S7, the mesa M is formed (see FIG. 12). Specifically, a resist pattern for forming the mesa M is formed on the stacked body (see FIG. 11) by photolithography, and the stacked body is etched by dry etching or wet etching using the resist pattern as a mask. The etching depth here is set to, for example, until the first contact layer 102 is exposed. Thereafter, the resist pattern is removed.

[0068] In the next step S8, the anode electrode 110 and the cathode electrode 111 are formed (see FIG. 13 ). Specifically, the anode electrode 110 is formed on the center of the second contact layer 108 by, for example, a lift-off method. The cathode electrode 111 is formed in a circumferential (e.g., ring-shaped) shape surrounding the mesa on the periphery of the mesa of the first contact layer 102 by, for example, a lift-off method. At this time, the electrode material is deposited by, for example, evaporation, sputtering, or the like.

[0069] In the next step S9, the insulating film 109 is formed. Specifically, first, the insulating film 109 is formed on the entire surface of the stack (see FIG. 13 ) on which the anode electrode 110 and the cathode electrode 111 are formed by, for example, CVD (Chemical Vapor Deposition), sputtering, evaporation, or the like (see FIG. 14 ). Next, the insulating film 109 covering the anode electrode 110 and the cathode electrode 111 is removed by photolithography and etching to expose the anode electrode 110 and the cathode electrode 111 (see FIG. 15 ).

[0070] Alternatively, instead of steps S8 and S9, an insulating film 109 may be formed before the anode electrode 110 and the cathode electrode 111 are formed on the laminate, and contact holes for forming the anode electrode 110 and the cathode electrode 111 may be formed in the insulating film 109, and electrodes corresponding to each contact hole may be formed by, for example, lift-off.

[0071] In the next step S10, the cathode wiring 112 is formed (see FIG. 16 ). Specifically, the cathode wiring 112 is formed by, for example, plating so that its lower end contacts the cathode electrode 111, its upper end covers the corners of the mesa top via the insulating film 109, and its middle portion covers the side surfaces of the mesa via the insulating film 109. Note that, prior to plating, it is preferable to form a seed layer in the area to be plated.

[0072] In the final step S11, substrate 101 is thinned to form AR film 113 (see FIG. 17 ). Specifically, first, the back surface of substrate 101 is thinned by grinding using, for example, a grinder or a CMP (Chemical Mechanical Polisher) device. Next, AR film 113 is formed on the back surface of thinned substrate 101 by, for example, sputtering or vapor deposition. Substrate 101 is then diced to obtain multiple chip-shaped photonic crystal surface light-emitting devices 10. Note that, before dicing, it is preferable to remove the portion of insulating film 109 to be diced.

[0073] <Effects of Photonic Crystal Surface Light Emitting Device and Method for Manufacturing Photonic Crystal Surface Light Emitting Device> Hereinafter, effects of the photonic crystal surface light emitting device 10 according to Example 1 of an embodiment of the present technology will be described.

[0074] The photonic crystal surface light emitting device 10 comprises a first structure ST1 including a substrate 101, and a second structure ST2 arranged on the first structure ST1, the second structure ST2 including a stacked structure LS in which at least a photonic crystal layer 105 and an active layer 104 are stacked, and a junction interface BI exists between the first structure ST1 and the second structure ST2.

[0075] In the photonic crystal surface light emitting device 10, a bonded structure having a bonding interface BI between the first structure ST1 and the second structure ST2 can be used to provide a photonic crystal surface light emitting device 10 with improved characteristics (e.g., improved light extraction efficiency) and improved productivity (e.g., high throughput due to NIL). Additionally, in the photonic crystal surface light emitting device 10, the structure in which the first structure ST1 including the substrate 101 and the second structure ST2 including the stacked structure LS are bonded together can virtually eliminate unevenness that occurs on the substrate 101 compared to when each layer of the stacked structure is epitaxially grown on a substrate. This allows for improved productivity using NIL.

[0076] The first structure ST1 and the laminated structure LS are made of the same material, which improves the state of the bonding interface BI and increases the bonding strength.

[0077] The substrate 101 and the second structure ST2 are bonded together. This minimizes the occurrence of irregularities on the substrate 101, thereby suppressing patterning defects in the photonic crystal layer 105. This leads to improved yield. Furthermore, it is possible to position the junction interface BI, which may have high electrical resistance, at a position away from the current path for injecting current (drive current) into the active layer 104. This allows for a configuration that prevents the drive current from flowing through the junction interface BI, allowing the drive current to flow smoothly.

[0078] The first structure ST1 and the stacked structure LS are bonded together. This allows the junction interface BI, which may have high electrical resistance, to be positioned away from the current path for injecting current (drive current) into the active layer 104. This prevents the drive current from flowing through the junction interface BI, allowing the drive current to flow smoothly.

[0079] The stacked structure LS has a first contact layer 102 as a semiconductor layer stacked with the photonic crystal layer 105 and the active layer 104 and bonded to the first structure ST1, and the second structure ST2 includes a cathode electrode 111 that is an electrode in contact with the first contact layer 102. This makes it possible to achieve low resistance.

[0080] The second structure ST2 includes an anode electrode 110 and a cathode electrode 111 for applying current to the laminated structure LS. In this case, the photonic crystal surface light emitting device 10 can be flip-chip mounted on a mounting substrate. This allows for a configuration that eliminates factors such as resistance and impedance caused by wiring.

[0081] The stacked structure LS includes first and second cladding layers 103 and 106 that sandwich a resonator (light emitting portion) including a photonic crystal layer 105 and an active layer 104. This allows a double heterostructure to be configured with the photonic crystal layer 105 adjacent to the active layer 104.

[0082] The stacked structure LS includes a reflecting mirror 107 on the side opposite to the first structure side ST1 of the resonator (light emitting portion) including the photonic crystal layer 105 and the active layer 104. This allows light emitted upward from the resonator including the photonic crystal layer 105 and the active layer 104 to be reflected downward by the reflecting mirror 107, allowing more light to be extracted from the first structure ST1 (more specifically, the substrate 101). In other words, the light utilization efficiency can be improved.

[0083] The second structure ST2 includes an anode electrode 110 on the side of the stacked structure LS opposite to the first structure ST1 side, and the stacked structure LS includes a second contact layer 108 as a semiconductor layer in contact with the anode electrode 110. This makes it possible to reduce the contact resistance between the anode electrode 110 and the stacked structure LS.

[0084] The bonded interface BI preferably includes an amorphous layer, which suggests that the bonded interface BI was generated by surface activated bonding (room temperature bonding), and therefore can be evidence that the bonded interface BI is an element with less deterioration in characteristics compared to elements generated by bonding in a high temperature environment.

[0085] The substrate 101 is a lightly doped semiconductor substrate or a semi-insulating substrate, which can suppress light absorption in the substrate 101 and improve light extraction efficiency.

[0086] The second structure ST2 has a mesa including at least a part of the stacked structure LS, which improves the lateral optical confinement ratio and makes it easy to form the anode electrode 110, the cathode electrode 111, and the cathode wiring 112.

[0087] Photonic crystal surface light emitting device 10 emits light on the side of first structure ST1 opposite to the second structure ST2 side, thereby realizing a rear-surface emission type photonic crystal surface light emitting device.

[0088] The method for manufacturing the photonic crystal surface light emitting device 10 includes the steps of stacking a plurality of layers, including the base material 105m of the photonic crystal layer 105 and the active layer 104, on a growth substrate GS (first substrate) to generate a laminate; attaching a substrate 101 (second substrate) to the surface of the laminate opposite to the growth substrate GS; removing at least the growth substrate GS from the laminate to which the substrate 101 is attached to expose the base material 105m; and processing the base material 105m to form the photonic crystal layer 105.

[0089] According to the manufacturing method of the photonic crystal surface light emitting device 10, it is possible to manufacture a photonic crystal surface light emitting device 10 having improved characteristics (e.g., improved light extraction efficiency) and improved productivity (e.g., high throughput due to NIL) through a bonding structure.

[0090] In the forming step, the photonic crystal layer is formed by applying nanoimprint lithography to the base material, which allows the photonic crystal surface light emitting device 10 to be manufactured more efficiently.

[0091] 2. Photonic Crystal Plane Light Emitting Device According to Example 2 of an Embodiment of the Present Technology FIG. 18 is a cross-sectional view of a photonic crystal plane light emitting device 20 according to Example 2 of an embodiment of the present technology.

[0092] The photonic crystal surface light emitting device 20 of Example 2 has a configuration similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that the junction interface BI is located within the first contact layer 102, as shown in Figure 18.

[0093] In the photonic crystal surface light emitting element 20, the first structure ST1 includes the AR film 113, the substrate 101, and the first contact layer lower part 102a which is the lower part of the first contact layer 102, and the stacked structure LS of the second structure ST2 includes the first contact layer upper part 102b which is the upper part of the first contact layer 102, the first cladding layer 103, the active layer 104, the photonic crystal layer 105, the second cladding layer 106, the reflector 107, and the second contact layer 108.

[0094] Here, the first contact layer lower portion 102a and the first contact layer upper portion 102b are bonded together, and the interface between the first contact layer lower portion 102a and the first contact layer upper portion 102b forms a bonded interface BI.

[0095] The photonic crystal surface light emitting device 20 can be manufactured by a method generally similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that the lower part 102a of the first contact layer stacked (epitaxially grown) on the substrate 101 is attached to the upper part 102b of the first contact layer of the laminate.

[0096] According to the photonic crystal surface light emitting device 20, although the lower part 102a of the first contact layer is stacked on the substrate 101, the unevenness that occurs on the substrate 101 can be significantly reduced compared to when all layers of the stacked structure LS are stacked (epitaxially grown) on the substrate, and an effect comparable to that of the photonic crystal surface light emitting device 10 of Example 1 can be obtained.

[0097] 3. Photonic Crystal Plane Light Emitting Device According to Example 3 of an Embodiment of the Present Technology FIG. 19 is a cross-sectional view of a photonic crystal plane light emitting device 30 according to Example 3 of an embodiment of the present technology.

[0098] The photonic crystal surface light emitting device 30 of Example 3 has a configuration similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that the junction interface BI is located between the first contact layer 102 and the first cladding layer 103, as shown in Figure 19.

[0099] In the photonic crystal surface light emitting element 20, the first structure ST1 includes an AR film 113, a substrate 101, and a first contact layer 102, and the stacked structure LS of the second structure ST2 includes a first cladding layer 103, an active layer 104, a photonic crystal layer 105, a second cladding layer 106, a reflecting mirror 107, and a second contact layer 108.

[0100] Here, the first contact layer 102 and the first cladding layer 103 are bonded together, and the interface between the first contact layer 102 and the first cladding layer 103 forms a bonded interface BI.

[0101] The photonic crystal surface light emitting device 30 can be manufactured by a method generally similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that the first contact layer 102 stacked (epitaxially grown) on the substrate 101 is attached to the first clad layer 103 of the stack.

[0102] According to the photonic crystal surface emitting device 30, although the first contact layer 102 is stacked on the substrate 101, the unevenness that occurs on the substrate 101 can be reduced compared to when all layers of the stacked structure LS are stacked (epitaxially grown) on the substrate, and although the effect is somewhat inferior to that of the photonic crystal surface emitting device 10 of Example 1, a similar effect can be obtained.

[0103] 4. Photonic Crystal Plane Light Emitting Device According to Example 4 of an Embodiment of the Present Technology FIG. 20 is a cross-sectional view of a photonic crystal plane light emitting device 40 according to Example 4 of an embodiment of the present technology.

[0104] The photonic crystal surface light emitting device 40 of Example 4 has a configuration similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that the junction interface BI is located within the first cladding layer 103, as shown in Figure 20.

[0105] In the photonic crystal surface light emitting element 40, the first structure ST1 includes the AR film 113, the substrate 101, the first contact layer 102, and the lower part of the first cladding layer 103, i.e., the lower part of the first cladding layer 103, i.e., the lower part of the first cladding layer 103, i.e., the upper part of the first cladding layer 103, i.e., the upper part of the first cladding layer 103, i.e., the active layer 104, the photonic crystal layer 105, the second cladding layer 106, the reflector 107, and the second contact layer 108.

[0106] Here, the first cladding layer lower part 103a and the first cladding layer upper part 103b are bonded together, and the interface between the first cladding layer lower part 103a and the first cladding layer upper part 103b forms a bonded interface BI.

[0107] The photonic crystal surface light emitting device 40 can be manufactured by a method generally similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that the first contact layer 102 and the lower part of the first cladding layer 103a are stacked (epitaxially grown) in this order on the substrate 101, and the lower part of the first cladding layer 103a is attached to the upper part of the first cladding layer 103b of the stack.

[0108] According to the photonic crystal surface light emitting device 40, although the first contact layer 102 and the lower part of the first cladding layer 103a are stacked on the substrate 101, the unevenness that occurs on the substrate 101 can be reduced compared to when all layers of the stacked structure LS are stacked (epitaxially grown) on the substrate, and although this is inferior to the photonic crystal surface light emitting device 10 of Example 1, a similar effect can be obtained.

[0109] 5. Photonic Crystal Surface Light Emitting Device According to Example 5 of an Embodiment of the Present Technology FIG. 21 is a cross-sectional view of a photonic crystal surface light emitting device 50 according to Example 5 of an embodiment of the present technology.

[0110] The photonic crystal surface light emitting device 50 of Example 5 has a configuration similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that the junction interface BI is located between the first cladding layer 103 and the active layer 104, as shown in Figure 21.

[0111] In the photonic crystal surface light emitting element 50, the first structure ST1 includes an AR film 113, a substrate 101, a first contact layer 102, and a first cladding layer 103, and the stacked structure LS of the second structure ST2 includes an active layer 104, a photonic crystal layer 105, a second cladding layer 106, a reflecting mirror 107, and a second contact layer 108.

[0112] Here, the first cladding layer 103 and the active layer 104 are bonded together, and the interface between the first cladding layer 103 and the active layer 104 forms a bonded interface BI.

[0113] The photonic crystal surface light emitting device 50 can be manufactured by a method generally similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that the first clad layer 103, which is made by stacking (epitaxially growing) the first contact layer 102 and the first clad layer 103 in this order on the substrate 101, is attached to the active layer 104 of the stack.

[0114] According to the photonic crystal surface emitting device 50, although the first contact layer 102 and the first cladding layer 103 are stacked on the substrate 101, the unevenness that occurs on the substrate 101 can be reduced compared to when all layers of the stacked structure LS are stacked (epitaxially grown) on the substrate, and although this is inferior to the photonic crystal surface emitting device 10 of Example 1, a similar effect can be obtained.

[0115] 6. Photonic Crystal Plane Light Emitting Device According to Example 6 of an Embodiment of the Present Technology FIG. 22 is a cross-sectional view of a photonic crystal plane light emitting device 60 according to Example 6 of an embodiment of the present technology.

[0116] As shown in FIG. 22, the photonic crystal surface light emitting device 60 according to the sixth embodiment has the same configuration as the photonic crystal surface light emitting device 10 according to the first embodiment, except that the anode electrode 110 has a larger area.

[0117] In the photonic crystal surface light emitting device 60, the anode electrode 110 has a large area, which reduces the contact resistance between the anode electrode 110 and the second contact layer 108, allowing a current to flow smoothly from the anode electrode 110 to the stacked structure LS. Furthermore, the large-area anode electrode 110 can also function as a metal mirror, in which case it can form a hybrid mirror together with the reflector 107, which is a semiconductor multilayer film reflector.

[0118] 7. Photonic Crystal Plane Light Emitting Device According to Example 7 of an Embodiment of the Present Technology FIG. 23 is a cross-sectional view of a photonic crystal plane light emitting device 70 according to Example 7 of an embodiment of the present technology.

[0119] The photonic crystal surface light emitting device 70 of Example 7 has the same configuration as the photonic crystal surface light emitting device 10 of Example 1, except that the positional relationship between the photonic crystal layer 105 and the active layer 104 is reversed as shown in Figure 23.

[0120] In the photonic crystal surface light emitting device 70 , the active layer 104 is disposed above the photonic crystal layer 105 .

[0121] According to the photonic crystal surface light emitting device 70, the same effects as those of the photonic crystal surface light emitting device 10 according to the first embodiment can be obtained.

[0122] 8. Photonic crystal surface light emitting device according to example 8 of an embodiment of the present technology> Fig. 24 is a cross-sectional view of a photonic crystal surface light emitting device 80 according to example 8 of an embodiment of the present technology. Fig. 25 is a plan view of a photonic crystal surface light emitting device 80 according to example 8 of an embodiment of the present technology. Fig. 24 is a cross-sectional view taken along line 24-24 of Fig. 25 .

[0123] As shown in Figures 24 and 25, the photonic crystal surface light emitting device 80 of Example 8 has a configuration generally similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that it has a trench T for cathode extraction.

[0124] In the photonic crystal surface light emitting device 80, a trench T is provided in the stacked structure LS, which is circumferential in plan view (for example, ring-shaped in plan view) and surrounds the modified refractive index periodic structure 105a of the photonic crystal layer 105. Here, the photonic crystal layer 105 does not have a modified refractive index region on the outer periphery of the trench T.

[0125] The bottom surface of the trench T coincides with the top surface of the first contact layer 102. The side surfaces and opening end of the trench T are covered with an insulating film 109. A circumferential (e.g., ring-shaped) cathode electrode 111 is provided on the bottom surface of the trench T. A portion of the cathode wiring 112 is provided inside the trench T, and the other portion is exposed to the outside. More specifically, one end of the cathode wiring 112 contacts the cathode electrode 111, an intermediate portion extends in the depth direction of the trench T via the insulating film 109, and the other end is provided above the opening end of the trench T via the insulating film 109.

[0126] According to the photonic crystal surface light emitting device 80, the same effects as those of the photonic crystal surface light emitting device 10 according to the first embodiment can be obtained.

[0127] 9. Photonic crystal surface light emitting device according to example 9 of an embodiment of the present technology> Fig. 26 is a cross-sectional view of a photonic crystal surface light emitting device 90 according to example 9 of an embodiment of the present technology. Fig. 27 is a plan view of a photonic crystal surface light emitting device 90 according to example 9 of an embodiment of the present technology. Fig. 26 is a cross-sectional view taken along line 26-26 of Fig. 27 .

[0128] As shown in Figures 26 and 27, the photonic crystal surface light emitting device 90 of Example 9 has a configuration generally similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that it is a surface-emitting photonic crystal surface emitting laser.

[0129] In the second structure ST2 of the photonic crystal surface light emitting element 90, a reflector 107, a first cladding layer 103, an active layer 104, a photonic crystal layer 105, a second cladding layer 106 and a second contact layer 108 are stacked in this order on the first contact layer 102 from the first contact layer 102 side (bottom side).

[0130] Here, a circumferential (for example, ring-shaped) anode electrode 110 is provided on second contact layer 108. Anode electrode 110 surrounds at least the center of modified refractive index periodic structure 105a of photonic crystal layer 105 in plan view.

[0131] Here, reflector 107 is made of a first conductivity type (n-type) GaAs-based semiconductor multilayer reflector. In photonic crystal surface light emitting device 90, light emitted downward from a resonator including photonic crystal layer 105 and active layer 104 and reflected upward by reflector 107, as well as light emitted upward from the resonator, are emitted from the top of mesa M.

[0132] The photonic crystal surface light emitting device 90 can be manufactured by a method generally similar to that of the photonic crystal surface light emitting device 10 according to the first embodiment, except for the order in which the layers are stacked when creating the laminate.

[0133] According to the photonic crystal surface light emitting device 90, a surface-emitting photonic crystal surface emitting laser that can obtain the same effects as the photonic crystal surface light emitting device 10 according to the first embodiment can be realized.

[0134] 10. Photonic Crystal Surface Light-Emitting Device Array According to Example 10 of an Embodiment of the Present Technology FIG. 28 is a cross-sectional view of a photonic crystal surface light-emitting device array 100 according to Example 10 of an embodiment of the present technology.

[0135] As shown in FIG. 28, the photonic crystal surface light emitting device array 100 includes a plurality of photonic crystal surface light emitting devices 10 according to the first embodiment.

[0136] The plurality of photonic crystal surface light emitting devices 10 share a substrate 101. The second structures of the plurality of photonic crystal surface light emitting devices 10 are arranged in an array (one-dimensional array, two-dimensional array (e.g., matrix, staggered, etc.)) on the substrate 101. Adjacent second structures have independent anode electrodes 110, and the cathode sides of the adjacent second structures are substantially electrically and optically isolated from each other by isolation trenches IT (isolation trenches) provided in the first contact layer 102. This makes it possible to efficiently drive each of the plurality of photonic crystal surface light emitting devices 10 independently.

[0137] By differentiating the parameters (e.g., lattice constant, pitch of the modified refractive index regions, area, etc.) of the photonic crystal layer 105 of each photonic crystal surface light-emitting device 10, it is possible to differentiate the characteristics (e.g., emission angle, emission direction, polarization direction, output, etc.) of each photonic crystal surface light-emitting device 10.

[0138] According to the photonic crystal surface light emitting device array 100, it is possible to provide a photonic crystal surface light emitting device array including a plurality of photonic crystal surface light emitting devices 10 according to the first embodiment, which can achieve the above-mentioned effects.

[0139] 11. Light-emitting device according to example 11 of an embodiment of the present technology FIG. 29 is a cross-sectional view of a light-emitting device 119 according to example 11 of an embodiment of the present technology.

[0140] 29, the light emitting device 119 includes the photonic crystal surface light emitting element array 100 according to the tenth embodiment and a mounting substrate 200 on which the photonic crystal surface light emitting element array 100 is mounted. Here, the mounting substrate 200 is a drive substrate having a driver (drive circuit), but it may also be a wiring substrate electrically connected to the driver.

[0141] Each photonic crystal surface light emitting element 10 of the photonic crystal surface light emitting element array 100 has an anode electrode 110 joined to the anode side terminal of the mounting substrate 200 via a first bump BP1, and a cathode electrode 111 connected to the cathode side terminal of the mounting substrate 200 via a circular (e.g., ring-shaped) second bump BP2 surrounding the first bump BP1.

[0142] According to the light emitting device 119, it is possible to provide a light emitting device 119 in which a plurality of photonic crystal surface light emitting elements 10 are flip-chip mounted (junction-down mounted) on a mounting substrate 200. The light emitting device 119 can reduce inductance compared to, for example, a case in which a plurality of photonic crystal surface light emitting elements are junction-up mounted on a mounting substrate, and can drive each photonic crystal surface light emitting element 10 at high speed with low power consumption.

[0143] 12. Photonic Crystal Plane Light Emitting Device According to Example 12 of an Embodiment of the Present Technology FIG. 30 is a cross-sectional view of a photonic crystal plane light emitting device 120 according to Example 12 of an embodiment of the present technology.

[0144] As shown in FIG. 30, the photonic crystal surface light emitting device 120 has the same configuration as the photonic crystal surface light emitting device 10 according to the first embodiment, except that it does not have the second cladding layer 106 .

[0145] In this case, the reflector 107 made of a p-type semiconductor multilayer film reflector also serves as a p-type clad layer.

[0146] The photonic crystal surface light emitting device 120 does not have the second cladding layer 106, and therefore the layer structure and manufacturing process can be simplified.

[0147] 13. Photonic Crystal Plane Light Emitting Device According to Example 13 of an Embodiment of the Present Technology FIG. 31 is a cross-sectional view of a photonic crystal plane light emitting device 130 according to Example 13 of an embodiment of the present technology.

[0148] As shown in FIG. 31, the photonic crystal surface light emitting device 130 has a configuration generally similar to that of the photonic crystal surface light emitting device 10 according to the first embodiment, except that it does not have the first and second contact layers 102 and 108 .

[0149] In photonic crystal surface light emitting device 130, substrate 101 and first cladding layer 103 are bonded together, and the interface between substrate 101 and first cladding layer 103 forms a bonded interface BI.

[0150] In the photonic crystal surface light emitting device 130, the mesa is composed of the upper layer of the first cladding layer 103, the active layer 104, the photonic crystal layer 105, the second cladding layer 106 and the reflecting mirror 107, and an anode electrode 110 is provided on the reflecting mirror 107, and a cathode electrode 111 is provided on the peripheral portion of the mesa below the first cladding layer 103.

[0151] Here, in order to reduce resistance, it is preferable to use a highly doped p-type semiconductor multilayer film reflector as the reflector 107 and a highly doped n-type cladding layer as the first cladding layer 103 .

[0152] The photonic crystal surface light emitting device 130 can reduce the series resistance and simplify the layer structure and manufacturing process.

[0153] 14. Photonic Crystal Plane Light Emitting Device According to Example 14 of an Embodiment of the Present Technology FIG. 32 is a cross-sectional view of a photonic crystal plane light emitting device 140 according to Example 14 of an embodiment of the present technology.

[0154] As shown in FIG. 32, the photonic crystal surface light emitting device 140 has a configuration generally similar to that of the photonic crystal surface light emitting device 130 according to the thirteenth embodiment, except that it has a double intra-cavity structure.

[0155] In the photonic crystal surface light emitting device 140, the mesa has a two-stage structure, with the lower stage being composed of the upper layer of the first cladding layer 103, the active layer 104, the photonic crystal layer 105, and the second cladding layer 106, and the upper stage being composed of a reflecting mirror 107 (a p-type semiconductor multilayer film reflecting mirror). The anode electrode 110 can also function as a metal reflecting mirror, and in this case, the anode electrode 110 can form a hybrid mirror together with the semiconductor multilayer film reflecting mirror serving as the reflecting mirror 107.

[0156] Here, the cathode wiring 112 is provided thick, thereby achieving low resistance.

[0157] Photonic crystal surface light emitting device 140 can reduce the series resistance and simplify the layer structure.

[0158] 15. Photonic Crystal Plane Light Emitting Device According to Example 15 of an Embodiment of the Present Technology FIG. 33 is a cross-sectional view of a photonic crystal plane light emitting device 150 according to Example 15 of an embodiment of the present technology.

[0159] As shown in FIG. 33, photonic crystal surface light emitting device 150 has a configuration generally similar to photonic crystal surface light emitting device 140 of Example 14, except that reflector 107 is a dielectric multilayer film reflector.

[0160] In the photonic crystal surface light-emitting device 150, the anode electrode 110 is provided so as to cover the upper and side surfaces of the reflector 107 and to be in contact with the second cladding layer 106. The anode electrode 110 can also function as a metal reflector. In this case, the anode electrode 110 can constitute a hybrid mirror together with the dielectric multilayer film reflector serving as the reflector 107.

[0161] Photonic crystal surface light emitting device 150 can reduce the series resistance and simplify the layer structure.

[0162] 16. Photonic Crystal Plane Light Emitting Device According to Example 16 of an Embodiment of the Present Technology FIG. 34 is a cross-sectional view of a photonic crystal plane light emitting device 160 according to Example 16 of an embodiment of the present technology.

[0163] As shown in FIG. 34, the photonic crystal surface light emitting device 160 has a configuration generally similar to that of the photonic crystal surface light emitting device 90 according to Example 9, except that it does not have the first contact layer 102 .

[0164] In photonic crystal surface light emitting device 160, substrate 101 and reflecting mirror 107 are bonded together, and the interface between substrate 101 and reflecting mirror 107 forms bonded interface BI.

[0165] In the photonic crystal surface light emitting device 160, the mesa is composed of a reflector 107, a first cladding layer 103, an active layer 104, a photonic crystal layer 105, a second cladding layer 106, and a second contact layer 108, and a cathode electrode 111 is provided on the periphery of the mesa of the substrate 101.

[0166] Here, it is preferable to use a highly doped n-type substrate as the substrate 101 .

[0167] The photonic crystal surface light emitting device 160 can reduce the series resistance and simplify the layer structure and manufacturing process.

[0168] 17. Photonic Crystal Plane Light Emitting Device According to Example 17 of an Embodiment of the Present Technology FIG. 35 is a cross-sectional view of a photonic crystal plane light emitting device 170 according to Example 17 of an embodiment of the present technology.

[0169] As shown in FIG. 35, photonic crystal surface light emitting device 170 has a configuration generally similar to photonic crystal surface light emitting device 160 according to Example 16, except that the mesa does not have the lower part of reflecting mirror 107 .

[0170] In the photonic crystal surface light emitting device 170, the mesa is composed of the upper part of the reflecting mirror 107, the first cladding layer 103, the active layer 104, the photonic crystal layer 105, the second cladding layer 106, and the second contact layer 108, and a cathode electrode 111 is provided on the periphery of the mesa below the reflecting mirror 107.

[0171] Here, it is preferable to use a highly doped n-type semiconductor multilayer film reflector as the reflector 107 .

[0172] Photonic crystal surface light emitting device 170 can further reduce the series resistance and simplify the layer structure and manufacturing process.

[0173] 18. Photonic Crystal Plane Light Emitting Device According to Example 18 of an Embodiment of the Present Technology FIG. 36 is a cross-sectional view of a photonic crystal plane light emitting device 180 according to Example 18 of an embodiment of the present technology.

[0174] As shown in Figure 36, the photonic crystal surface light emitting device 180 has a configuration generally similar to that of the photonic crystal surface light emitting device 160 of Example 16, except that the mesa does not have a reflector 107, a lower layer of the first cladding layer 103, or a second contact layer 108.

[0175] In the photonic crystal surface light emitting device 180, the mesa is composed of the upper layer of the first cladding layer 103, the active layer 104, the photonic crystal layer 105 and the second cladding layer 106, an anode electrode 110 is provided on the second cladding layer 106, and a cathode electrode 111 is provided on the periphery of the mesa at the bottom of the first cladding layer 103.

[0176] Here, in order to reduce the resistance, it is preferable to use a highly doped p-type cladding layer as the second cladding layer 106 and a highly doped n-type cladding layer as the first cladding layer 103 .

[0177] Photonic crystal surface light emitting device 180 can further reduce the series resistance and simplify the layer structure and manufacturing process.

[0178] 19. Photonic Crystal Plane Light Emitting Device According to Example 19 of an Embodiment of the Present Technology FIG. 37 is a cross-sectional view of a photonic crystal plane light emitting device 190 according to Example 19 of an embodiment of the present technology.

[0179] As shown in Figure 37, the photonic crystal surface light emitting device 190 has a configuration similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that a heat dissipation layer 114 is provided between the substrate 101 and the first contact layer 102.

[0180] In photonic crystal surface light emitting device 190, the laminated structure of second structure ST2 has heat dissipation layer 114, which is bonded to substrate 101. That is, the interface between heat dissipation layer 114 and substrate 101 forms bonding interface BI.

[0181] The heat dissipation layer 114 is made of, for example, AlAs.

[0182] Photonic crystal surface-emitting device 190 can realize a photonic crystal surface-emitting laser with excellent heat dissipation properties.

[0183] 19.5. Photonic Crystal Plane Light Emitting Device According to Example 19.5 of One Embodiment of the Present Technology FIG. 38 is a cross-sectional view of a photonic crystal plane light emitting device 195 according to Example 19.5 of one embodiment of the present technology.

[0184] As shown in Figure 38, the photonic crystal surface light emitting device 195 has a configuration similar to that of the photonic crystal surface light emitting device 10 of Example 1, except that a heat dissipation layer 114 is provided between the substrate 101 and the first contact layer 102.

[0185] In the photonic crystal surface light emitting device 195, the first structure ST1 has a heat dissipation layer 114 on the substrate 101 (or other substrates such as an n-GaAs substrate or an SI-GaAs substrate), and the heat dissipation layer 114 is bonded to the first contact layer 102. That is, the interface between the heat dissipation layer 114 and the first contact layer 102 forms a bonded interface BI.

[0186] The heat dissipation layer 114 is made of, for example, AlAs.

[0187] The photonic crystal surface-emitting device 195 can realize a photonic crystal surface-emitting laser with excellent heat dissipation properties.

[0188] 20. Light Receiving and Emitting Device According to Twenty-First Example of an Embodiment of the Present Technology FIG. 39 is a cross-sectional view of a light receiving and emitting device 201 according to a twentieth example of an embodiment of the present technology.

[0189] As shown in FIG. 39, the light receiving and emitting device 201 includes the photonic crystal surface light emitting element 10 according to the first embodiment and a light receiving element 115 .

[0190] In the light receiving and emitting device 201, the substrate 101 has a protruding portion that protrudes from the portion where the second structure ST2 is arranged, and a light receiving element 115 is provided, for example, semi-embedded on the back surface (lower surface) of the protruding portion.

[0191] Here, the substrate 101 is made of a material (for example, Si, Ge, etc.) different from the material (GaAs-based compound semiconductor) of the laminated structure of the second structure ST2.

[0192] The light receiving element 115 may be, for example, a PN photodiode, a PIN photodiode, or an avalanche photodiode.

[0193] A driver (drive circuit) connected to photonic crystal surface light emitting element 10 by wire bonding or the like, and a TOF (Time Of Flight) calculation circuit may be formed on the protruding portion of substrate 101 .

[0194] The light emitting and receiving device 201 can be realized as a back-side emission and back-side illumination type light emitting and receiving device.

[0195] 21. Photonic Crystal Plane Light Emitting Device According to Example 21 of an Embodiment of the Present Technology FIG. 40 is a cross-sectional view of a photonic crystal plane light emitting device 210 according to Example 21 of an embodiment of the present technology.

[0196] As shown in FIG. 40, the photonic crystal surface light emitting device 210 has the same configuration as the photonic crystal surface light emitting device 160 according to the sixteenth embodiment, except that it is a back electrode type.

[0197] In photonic crystal surface light emitting device 210 , cathode electrode 111 is provided on the back surface of substrate 101 .

[0198] Photonic crystal surface light emitting device 210 can realize a back electrode type surface emitting photonic crystal surface emitting laser.

[0199] 22. Photonic Crystal Plane Light Emitting Device According to Example 22 of an Embodiment of the Present Technology FIG. 41 is a cross-sectional view of a photonic crystal plane light emitting device 220 according to Example 22 of an embodiment of the present technology.

[0200] As shown in FIG. 41, photonic crystal surface light emitting device 220 has the same configuration as photonic crystal surface light emitting device 160 according to Example 16, except that it does not have first cladding layer 103 .

[0201] In photonic crystal surface light emitting device 220, reflector 107, which is an n-type semiconductor multilayer film reflector, also serves as an n-type clad layer.

[0202] The photonic crystal surface light emitting device 210 can simplify the layer structure and manufacturing process.

[0203] 23. Light Receiving and Emitting Device According to Twenty-Third Example of an Embodiment of the Present Technology FIG. 42 is a cross-sectional view of a light receiving and emitting device 230 according to a twenty-third example of an embodiment of the present technology.

[0204] As shown in FIG. 42, the light receiving and emitting device 230 includes a photonic crystal surface light emitting element 180 according to the eighteenth embodiment and a light receiving element 115 .

[0205] In the light receiving and emitting device 230, the substrate 101 has a protruding portion that protrudes from the portion where the second structure ST2 is arranged, and the light receiving element 115 is provided, for example, semi-embedded in the surface (upper surface) of the protruding portion.

[0206] Here, the substrate 101 is made of a material (for example, Si, Ge, etc.) different from the material (GaAs-based compound semiconductor) of the laminated structure of the second structure ST2.

[0207] The light receiving element 115 may be, for example, a PN photodiode, a PIN photodiode, or an avalanche photodiode.

[0208] A driver (drive circuit) connected to the photonic crystal surface light emitting element 180 by wire bonding or the like, and a TOF (Time Of Flight) calculation circuit may be formed on the substrate 101 .

[0209] The light emitting and receiving device 230 can be a surface emission and surface illumination type light emitting and receiving device.

[0210] 24. Photonic Crystal Plane Light Emitting Device According to Example 24 of an Embodiment of the Present Technology FIG. 43 is a cross-sectional view of a photonic crystal plane light emitting device 240 according to Example 24 of an embodiment of the present technology.

[0211] As shown in FIG. 43 , the photonic crystal surface light emitting device 240 has the same configuration as the photonic crystal surface light emitting device 180 according to Example 18, except that an SOI (Silicon on Insulator) substrate or a GOI (Germanium on Insulator) substrate is used as the substrate 101.

[0212] In the photonic crystal surface light emitting device 240, the substrate 101 has first and second semiconductor layers 101a and 101c, and an insulating layer 101b sandwiched between the first and second semiconductor layers 101a and 101c.

[0213] The first and second semiconductor layers 101a and 101c are both made of Si or Ge. The insulating layer 101b is made of, for example, SiO2.

[0214] A driver (drive circuit) including a transistor (e.g., MOSFET) is formed on the substrate 101. The substrate 101, which is an SOI substrate or a GOI substrate, can reduce stray capacitance, allowing the driver to operate at high speed with low power consumption.

[0215] When manufacturing photonic crystal surface light emitting device 240, reflector 107, which is a GaAs-based semiconductor multilayer film reflector, is bonded to second semiconductor layer 101c of substrate 101 by, for example, surface activated bonding (room temperature bonding), thermal bonding, or the like.

[0216] Photonic crystal surface light emitting device 240 can realize a driver-integrated surface-emitting photonic crystal surface light emitting device.

[0217] 25. Modifications of the present technology

[0218] The present technology is not limited to the examples of the above-described embodiment, and various modifications are possible. For example, materials such as Si, Ge, InP, GaN, and SiC may be used as the material of the substrate 101. In this case, the substrate 101 can be provided with functions different from those of GaAs (for example, high flatness, high heat dissipation, etc.).

[0219] In the above-described embodiments, a photonic crystal surface-emitting laser has been described as an example of a photonic crystal surface-emitting device according to the present technology. However, the present technology can also be applied to photonic crystal light-emitting diodes (e.g., resonant cavity LEDs (RCLEDs), non-resonant LEDs, etc.).

[0220] For example, in each of the above embodiments, a semiconductor multilayer film reflector is used as the reflector 107, but this is not limited to this. For example, a dielectric multilayer film reflector or a hybrid mirror including at least two of a semiconductor multilayer film reflector, a dielectric multilayer film reflector, and a metal reflector may also be used.

[0221] For example, in each of the above embodiments, the photonic crystal surface-emitting laser is made of a material that is lattice-matched to GaAs (GaAs-based compound semiconductor), but this is not limiting, and for example, a material that is lattice-matched to GaN (GaN-based compound semiconductor) or a material that is lattice-matched to InP (InP-based compound semiconductor) may also be used.

[0222] Parts of the configurations of the photonic crystal surface light emitting device in each of the above-described embodiments may be combined within a range that does not contradict each other.

[0223] The conductivity types of the layers of the photonic crystal surface light emitting device in each of the above embodiments may be reversed, in which case the positional relationship between the anode electrode 110 and the cathode electrode 111 must also be reversed.

[0224] In each of the above embodiments, the material, conductivity type, thickness, width, numerical value, shape, size, etc. of each layer constituting the photonic crystal surface light-emitting element, the light-receiving / light-emitting device, and the light-emitting device can be changed as appropriate within the range in which the photonic crystal surface light-emitting element, the light-receiving / light-emitting device, and the light-emitting device function.

[0225] 26. Application Examples to Electronic Devices The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot, a low-power device (e.g., a smartphone, a smartwatch, a tablet, a mouse, a laptop computer, etc.), or a communication device.

[0226] The photonic crystal surface light emitting device according to the present technology can also be used as a light source for devices that form or display images using laser light (for example, laser printers, laser copiers, projectors, head-mounted displays, head-up displays, etc.).

[0227] 27. Example of Application of Photonic Crystal Surface Light Emitting Device to Distance Measuring Device An example of application of the photonic crystal surface light emitting device 10 according to the first embodiment will be described below.

[0228] 44 shows an example of a schematic configuration of a distance measurement device 1000 (distance measuring device) including a photonic crystal surface light emitting device 10, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes the photonic crystal surface light emitting device 10. The distance measurement device 1000 includes, for example, the photonic crystal surface light emitting device 10, a light receiving device 125, lenses 128 and 138, a signal processing unit 145, a control unit 155, a display unit 165, and a storage unit 175.

[0229] The light receiving device 125 receives light emitted from the photonic crystal surface light emitting device 10 and reflected by the specimen S (object). That is, the light receiving device 125 detects the light reflected by the specimen S. The lens elements constituting the lens 128 are lenses for collimating the light emitted from the photonic crystal surface light emitting device 10, such as collimating lenses. Because the light emitted from the photonic crystal surface light emitting device 10 is collimated from the start due to its characteristics, the minimum number of lenses 128 is sufficient to obtain the desired beam quality, and the number of lenses can be fewer than that of conventional surface emitting lasers (e.g., VCSELs). Another feature of the photonic crystal surface light emitting device 10 is its ability to emit multiple beams of light in desired directions, roughly equivalent to a diffraction grating. In normal use, this function is included in the external lens 128. The lens 138 is a lens for collecting the light reflected by the specimen S and guiding it to the light receiving device 125, such as a collecting lens.

[0230] The signal processing unit 145 is a circuit for generating a signal corresponding to the difference between the signal input from the light receiving device 125 and the reference signal input from the control unit 155. The control unit 155 is configured to include, for example, a time-to-digital converter (TDC). The reference signal may be a signal input from the control unit 155, or may be an output signal from a detection unit that directly detects the output of the photonic crystal surface light emitting device 10. The control unit 155 is, for example, a processor that controls the photonic crystal surface light emitting device 10, the light receiving device 125, the signal processing unit 145, the display unit 165, and the storage unit 175. The control unit 155 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 145. The control unit 155 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 165. The display unit 165 displays the information about the distance to the subject S based on the video signal input from the control unit 155. The control unit 155 stores the information about the distance to the subject S in the storage unit 175.

[0231] In this application example, instead of the photonic crystal surface light-emitting element 10, any of the above-mentioned photonic crystal surface light-emitting elements 20, 30, 40, 50, 60, 70, 80, 90, 120, 130, 140, 150, 160, 170, 180, 190, 195, 210, 220, 240, photonic crystal surface light-emitting element array 100, light-emitting device 119, and light-receiving and light-emitting device 201, 230 can also be applied to the distance measurement device 1000.

[0232] 28. Example in which distance measuring device is mounted on a moving body> FIG. 45 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving body control system to which the technology according to the present disclosure can be applied.

[0233] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 45, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0234] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0235] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0236] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-described distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object outside the vehicle (subject S) and acquires the distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing for people, cars, obstacles, signs, etc. based on the acquired distance data.

[0237] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0238] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0239] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0240] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0241] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 45, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0242] FIG. 46 is a diagram showing an example of the installation position of the distance measurement device 12031.

[0243] In FIG. 46, a vehicle 12100 has distance measurement devices 12101, 12102, 12103, 12104, and 12105 as a distance measurement device 12031.

[0244] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of vehicle 12100. Distance measuring device 12101 provided on the front nose and distance measuring device 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire data ahead of vehicle 12100. Distance measuring devices 12102 and 12103 provided on the side mirrors mainly acquire data on the sides of vehicle 12100. Distance measuring device 12104 provided on the rear bumper or back door mainly acquires data behind vehicle 12100. The forward data acquired by distance measuring devices 12101 and 12105 is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0245] 46 shows an example of the detection ranges of the distance measurement devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measurement device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measurement devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measurement device 12104 provided on the rear bumper or back door.

[0246] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0247] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0248] The above describes an example of a mobile object control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the distance measurement device 12031 of the above-described configuration.

[0249] The present technology can also be configured as follows. (1) A photonic crystal surface light-emitting device comprising: a first structure including a substrate; and a second structure disposed on the first structure, the second structure including a stacked structure in which at least a photonic crystal layer and an active layer are stacked; wherein a bonding interface exists between the first structure and the second structure. (2) The photonic crystal surface light-emitting device according to (1), wherein the first structure and the stacked structure are made of the same material. (3) The photonic crystal surface light-emitting device according to (1), wherein the first structure and the stacked structure are made of different materials. (4) The photonic crystal surface light-emitting device according to any one of (1) to (3), wherein the substrate and the second structure are bonded together. (5) The photonic crystal surface light-emitting device according to any one of (1) to (4), wherein the first structure and the stacked structure are bonded together. (6) The photonic crystal surface emitter according to (5), wherein the laminated structure has a semiconductor layer laminated with the photonic crystal layer and the active layer and bonded to the first structure, and the second structure includes an electrode in contact with the semiconductor layer. (7) The photonic crystal surface emitter according to any one of (1) to (6), wherein the first structure includes a semiconductor layer laminated with the substrate and bonded to the second structure. (8) The photonic crystal surface emitter according to any one of (1) to (7), wherein the second structure includes first and second electrodes for applying current to the laminated structure. (9) The photonic crystal surface emitter according to any one of (1) to (8), wherein the laminated structure includes first and second clad layers sandwiching a light-emitting section including the photonic crystal layer and the active layer. (10) The photonic crystal surface emitter according to any one of (1) to (9), wherein the laminated structure includes a reflecting mirror on the side of the photonic crystal layer and the active layer opposite to the first structure. (11) The photonic crystal surface light-emitting device according to any one of (1) to (10), wherein the laminated structure includes a reflector on the first structure side of the photonic crystal layer and the active layer. (12) The photonic crystal surface light-emitting device according to any one of (1) to (11), wherein the second structure includes an electrode on the side of the laminated structure opposite to the first structure side, and the laminated structure includes a semiconductor layer in contact with the electrode.(13) The photonic crystal surface emitter according to any one of (1) to (12), wherein the junction interface includes an amorphous layer. (14) The photonic crystal surface emitter according to any one of (1) to (13), wherein the substrate is a lightly doped semiconductor substrate or a semi-insulating substrate. (15) The photonic crystal surface emitter according to any one of (1) to (14), wherein the second structure has a mesa including at least a part of the laminated structure. (16) The photonic crystal surface emitter according to any one of (1) to (15), wherein light is emitted to the side of the first structure opposite to the second structure. (17) An electronic device comprising a photonic crystal surface emitter, comprising: a first structure including a substrate; and a second structure disposed on the first structure, the second structure including a laminated structure in which at least a photonic crystal layer and an active layer are laminated; and wherein a junction interface is present between the first structure and the second structure. (18) The electronic device according to (17), further comprising a mounting substrate on which the photonic crystal surface light emitting device is mounted. (19) A method for manufacturing a photonic crystal surface light emitting device, comprising: a step of stacking a plurality of layers, including a base material of a photonic crystal layer and an active layer, on a first substrate to generate a stack; a step of attaching a second substrate to a surface of the stack opposite to the first substrate side; a step of removing at least the first substrate from the stack to which the second substrate is attached to expose the base material; and a step of processing the base material to form the photonic crystal layer. (20) The method for manufacturing a photonic crystal surface light emitting device according to (19), wherein, in the forming step, the photonic crystal layer is formed on the base material by nanoimprint lithography.

[0250] 10, 20, 30, 40, 50, 60, 70, 80, 90, 120, 130, 140, 150, 160, 170, 180, 190, 195, 210, 220, 240: Photonic crystal surface light emitting element 101: Substrate 102: First contact layer (semiconductor layer) 103: First cladding layer (semiconductor layer) 104: Active layer 105: Photonic crystal layer 106: Second cladding layer (semiconductor layer) 107: Reflector 108: Second contact layer (semiconductor layer) 110: Anode electrode (electrode) 111: Cathode electrode (electrode) 119: Light emitting device (electronic device) 201, 230: Light receiving / emitting device (electronic device) 1000: Distance measuring device (electronic device) ST1: First structure ST2: Second structure LS: Laminated structure BI: Bonding interface M: Mesa

Claims

1. A photonic crystal surface light emitting device comprising: a first structure including a substrate; and a second structure disposed on the first structure, the second structure including a layered structure in which at least a photonic crystal layer and an active layer are layered; wherein a junction interface exists between the first structure and the second structure.

2. The photonic crystal surface light emitting device according to claim 1, wherein the first structure and the laminated structure are made of the same material.

3. The photonic crystal surface light emitting device according to claim 1, wherein the first structure and the laminated structure are made of different materials.

4. The photonic crystal surface light emitting device according to claim 1, wherein the substrate and the second structure are bonded together.

5. The photonic crystal surface light emitting device according to claim 1, wherein the first structure and the laminated structure are bonded together.

6. The photonic crystal surface light emitting device according to claim 5, wherein the laminated structure has a semiconductor layer laminated with the photonic crystal layer and the active layer and bonded to the first structure, and the second structure includes an electrode in contact with the semiconductor layer.

7. The photonic crystal surface light emitting device according to claim 1, wherein the first structure includes a semiconductor layer stacked on the substrate and bonded to the second structure.

8. The photonic crystal surface light emitting device according to claim 1, wherein the second structure includes first and second electrodes for applying current to the laminated structure.

9. The photonic crystal surface light emitting device according to claim 1, wherein the laminated structure includes first and second clad layers sandwiching a light emitting section including the photonic crystal layer and the active layer.

10. The photonic crystal surface light emitting device according to claim 1, wherein the laminated structure includes a reflector on the side of the light emitting section including the photonic crystal layer and the active layer opposite to the first structure side.

11. The photonic crystal surface light emitting device according to claim 1, wherein the laminated structure includes a reflector on the first structure side of a light emitting section including the photonic crystal layer and the active layer.

12. The photonic crystal surface light-emitting element according to claim 1, wherein the second structure includes an electrode on the side of the laminated structure opposite to the first structure, and the laminated structure includes a semiconductor layer in contact with the electrode.

13. The photonic crystal surface light emitting device according to claim 1, wherein the bonding interface includes an amorphous layer.

14. The photonic crystal surface light-emitting device according to claim 1, wherein the substrate is a lightly doped semiconductor substrate or a semi-insulating substrate.

15. The photonic crystal surface light emitting device according to claim 1, wherein the second structure has a mesa including at least a portion of the laminated structure.

16. The photonic crystal surface light emitting device according to claim 1, which emits light to the side of the first structure opposite to the second structure side.

17. An electronic device comprising: a first structure including a substrate; and a second structure disposed on the first structure, the second structure including a layered structure in which at least a photonic crystal layer and an active layer are layered; wherein a junction interface exists between the first structure and the second structure, the electronic device comprising a photonic crystal surface light emitting element.

18. The electronic device according to claim 17, further comprising a mounting substrate on which the photonic crystal surface light emitting device is mounted.

19. A method for manufacturing a photonic crystal surface light-emitting device, comprising: a step of stacking a plurality of layers, including a base material and an active layer of a photonic crystal layer, on a first substrate to generate a stack; a step of attaching a second substrate to the surface of the stack opposite to the first substrate; a step of removing at least the first substrate from the stack to which the second substrate has been attached to expose the base material; and a step of processing the base material to form the photonic crystal layer.

20. The method for manufacturing a photonic crystal surface light-emitting device according to claim 19, wherein in the forming step, the photonic crystal layer is formed on the base material by nanoimprint lithography.

Images