Tandem OLED device

Abstract

Disclosed in the present invention is a tandem OLED device, comprising an anode layer, a side of which is provided with a hole injection layer, a first light-emitting layer, a charge generation layer and a second light-emitting layer being successively provided in a direction away from the anode layer on the side of the hole injection layer away from the anode layer. The charge generation layer comprises an N-type charge generation layer and a P-type charge generation layer on the side of the N-type charge generation layer away from the anode layer, at least one of the N-type charge generation layer and the P-type charge generation layer being divided into three sub-layers. The charge generation layer is doped with a conductive material, doping ratios of the sub-layers successively decreasing in the direction away from the anode layer. In the tandem OLED device of the present invention, the charge generation layer is divided into a plurality of thinner layers, such that the mobility rate of carriers inside the charge generation layer can be adjusted. By adjusting the thickness, a doping material and the doping ratios, carrier rates of adjacent layers can be matched with each other so as to avoid an obvious voltage drop at an interface between two adjacent layers caused by charge accumulation, thereby avoiding an excessive high voltage and a relatively short service life of the OLED device.

Description

Stacked OLED device TECHNICAL FIELD

[0001] The present application relates to the field of OLED devices, in particular to a stacked OLED device. BACKGROUND

[0002] OLED devices have been widely used in high-performance display fields in recent years, and the demand for OLED devices in notebook computers and vehicle screens is growing, which requires long service life and high HDR for OLED screens. In order to meet the above requirements, the organic light-emitting material with higher efficiency and better stability is usually replaced in the ordinary structure, but the improvement brought by replacing the organic light-emitting material is not obvious, and the service life can only be improved by 50%, and the cost is increased and the research and development iteration frequency is high. In the prior art, the light output rate of AMOLED is only about 25%, and the service life is not significantly superior to LCD.

[0003] SUMMARY

[0004] The purpose of the present application is to provide a stacked OLED device, improve the structure of the stacked OLED device, improve the use effect, and increase the service life.

[0005] The present application solves the above technical problems by the following technical solutions:

[0006] The present application provides a stacked OLED device, comprising an anode layer, wherein one side of the anode layer is provided with a hole injection layer, and one side of the hole injection layer away from the anode layer is sequentially provided with a first light-emitting layer, a charge generation layer and a second light-emitting layer in the direction away from the anode layer.

[0007] The first light-emitting layer comprises a first hole transport layer and a first electron transport layer located on one side of the first hole transport layer away from the anode layer, and the second light-emitting layer comprises a second hole transport layer and a second electron transport layer located on one side of the second hole transport layer away from the anode layer.

[0008] The charge generation layer comprises an N-type charge generation layer and a P-type charge generation layer located on one side of the N-type charge generation layer away from the anode layer, and at least one of the N-type charge generation layer and the P-type charge generation layer is divided into three sub-layers; the charge generation layer is doped with a conductive material, and the doping ratio in the sub-layers decreases in the direction away from the anode layer.

[0009] In the technical solution, the charge generation layer as a key part in the stacked OLED device provides electrons and holes for the first light emitting layer and the second light emitting layer respectively, at least a part of the charge generation layer is divided into thin multiple layers, and the moving speed of at least one carrier in the charge generation layer is adjusted; by adjusting the thickness, the doping material and the doping ratio, the carrier speed between adjacent layers can be matched to prevent the obvious voltage drop at the interface between the adjacent two layers caused by the charge accumulation, thereby avoiding the high voltage and the low life of the OLED device.

[0010] In some embodiments, the P-type charge generation layer is divided into a first P-type sub-layer, a second P-type sub-layer and a third P-type sub-layer in the direction away from the anode layer.

[0011] In the technical solution, the P-type charge generation layer is divided into three layers to adjust the carrier speed in the P-type charge generation layer.

[0012] In some embodiments, the material of the P-type charge generation layer is the same material as the first hole transport layer and the second hole transport layer and is doped with HAT-CN.

[0013] In the technical solution, the P-type charge generation layer uses the same material as the hole transport layer, which reduces the types of materials used in the production process, and adjusts the carrier speed by doping HAT-CN.

[0014] In some embodiments, the thickness of the first P-type sub-layer and the second P-type sub-layer is greater than the thickness of the third P-type sub-layer.

[0015] In the technical solution, the P-type sub-layer farthest from the anode layer is the thinnest to adapt to the carrier mobility of the hole transport layer adjacent thereto.

[0016] In some embodiments, the overall doping ratio in the P-type charge generation layer is 1-15%, and the single-layer doping ratio of each sub-layer is 0-35%.

[0017] In the technical solution, the doping ratio in the P-type charge generation layer is appropriate to adjust the carrier speed and avoid the transverse crosstalk caused by the too strong conductivity.

[0018] In some embodiments, the N-type charge generation layer is divided into a first N-type sub-layer, a second N-type sub-layer and a third N-type sub-layer in the direction away from the anode layer.

[0019] In the technical solution, the N-type charge generation layer is divided into three layers to adjust the carrier speed in the N-type charge generation layer.

[0020] In some embodiments, the material of the N-type charge generation layer is the same as the first and second electron transport layers and is doped with alkali metals, and the N-type charge generation layer contains arylamine compounds as the first and second electron transport layers do.

[0021] In the technical solution, the N-type charge generation layer uses the same material as the electron transport layer, reducing the types of materials used in the production process, and the carrier rate is adjusted by doping alkali metals.

[0022] In some embodiments, the thickness of the first and second N-type sub-layers is less than the thickness of the third N-type sub-layer.

[0023] In the technical solution, the N-type sub-layer farthest from the anode layer is the thickest to match the carrier mobility of the P-type charge generation layer adjacent thereto.

[0024] In some embodiments, the overall doping ratio in the N-type charge generation layer is 1-15%, and the single-layer doping ratio of each sub-layer is 0-35%.

[0025] In the technical solution, the doping ratio in the N-type charge generation layer is appropriate, which adjusts the carrier rate and avoids the absorption of visible light by the doping material to reduce the efficiency of the device.

[0026] In some embodiments, the P-type charge generation layer is divided into a first P-type sub-layer, a second P-type sub-layer, and a third P-type sub-layer in the direction away from the anode layer, and the N-type charge generation layer is divided into a first N-type sub-layer, a second N-type sub-layer, and a third N-type sub-layer in the direction away from the anode layer.

[0027] In the technical solution, the charge generation layer is divided into thinner multiple layers, which can adjust the moving rate of the two types of carriers inside the charge generation layer. By adjusting the thickness, doping material, and doping ratio, the carrier rate between adjacent layers can be matched to prevent the accumulation of charges from causing a significant voltage drop at the interface between the two adjacent layers, thereby avoiding a too high voltage and a relatively low lifespan of the OLED device.

[0028] On the basis of common sense in the art, the above-mentioned preferred conditions can be combined arbitrarily to obtain each preferred example of the present application.

[0029] The positive progress effect of the present application is that:

[0030] The stacked OLED device of the present application divides the charge generation layer into thinner multiple layers, which can adjust the moving rate of the carriers inside the charge generation layer. By adjusting the thickness, doping material, and doping ratio, the carrier rate between adjacent layers can be matched to prevent the accumulation of charges from causing a significant voltage drop at the interface between the two adjacent layers, thereby avoiding a too high voltage and a relatively low lifespan of the OLED device. Attached Figure Description

[0031] The above and other features and advantages of this application will become more apparent from a detailed description of exemplary embodiments thereof with reference to the accompanying drawings.

[0032] Figure 1 is a partially enlarged schematic diagram of the stacked OLED devices of Embodiments 1 and 2 of the present invention.

[0033] Figure 2 is a partially enlarged schematic diagram of the stacked OLED devices of Embodiments 3 and 4 of the present invention.

[0034] Figure 3 is a schematic diagram of the stacked OLED devices of Embodiments 1-5 of the present invention.

[0035] Figure 4 is a partially enlarged schematic diagram of the stacked OLED device of Embodiment 5 of the present invention.

[0036] Figure Labels

[0037] 1. Anode layer

[0038] 2. Hole injection layer

[0039] 100 First luminescent layer

[0040] 31 First Hole Transport Layer

[0041] 41 First Electron Blocking Layer

[0042] 51 First pixel light-emitting layer

[0043] 511 First Blue Pixel Emissive Layer

[0044] 521 First Green Pixel Emissive Layer

[0045] 531 First red pixel luminescent layer

[0046] 61 First Electron Transport Layer

[0047] 7. Charge generation layer

[0048] 71 N-type charge generation layer

[0049] 72 P-type charge generation layer

[0050] 73 First P-type sublayer

[0051] 74 second P-type sub-layer

[0052] 75 third P-type sub-layer

[0053] 76 first N-type sub-layer

[0054] 77 second N-type sub-layer

[0055] 78 third N-type sub-layer

[0056] 200 second light-emitting layer

[0057] 32 second hole transport layer

[0058] 42 second electron blocking layer

[0059] 52 second pixel light-emitting layer

[0060] 512 second blue pixel light-emitting layer

[0061] 522 second green pixel light-emitting layer

[0062] 532 second red pixel light-emitting layer

[0063] 62 second electron transport layer

[0064] 81 green pixel optical adjustment layer

[0065] 82 red pixel optical adjustment layer

[0066] 9 cathode layer

[0067] 10 light extraction layer DETAILED DESCRIPTION

[0068] The present application is illustrated by way of specific examples below, and other advantages and effects of the present application will be readily understood by those skilled in the art from the disclosure made herein. The present application can also be embodied in different ways or applied to various systems, and the details of the present application can be modified or changed in various ways without departing from the spirit of the present application. It should be noted that the embodiments and features of the embodiments in the present application can be combined with each other without conflict, if necessary.

[0069] The embodiments of the present application will be described in detail below with reference to the accompanying drawings, so that those skilled in the art can easily implement the present application. The present application can be embodied in various ways, and is not limited to the embodiments described herein.

[0070] In the description of the present application, the expressions "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" etc. mean that the specific features, structures, materials or characteristics expressed in connection with the embodiment or example are included in at least one embodiment or example of the present application. Also, the specific features, structures, materials or characteristics expressed can be combined in any appropriate way in one or more embodiments or examples. In addition, the skilled person in the art can combine and combine the different embodiments or examples expressed in the present application and the features of the different embodiments or examples, without conflict.

[0071] In addition, the terms "first", "second" are used only for the purpose of expression, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0072] In order to clearly illustrate the present application, devices irrelevant to the description are omitted, and the same or similar constituent elements throughout the description are given the same reference numerals.

[0073] Throughout the description, when it is said that a device is "connected" to another device, it includes not only the case of "direct connection", but also the case of "indirect connection" in which other elements are placed therebetween. In addition, when it is said that a device "includes" a certain constituent element, unless otherwise specifically stated, other constituent elements are not excluded, but it means that other constituent elements can also be included.

[0074] When it is said that a device is "on" another device, it can be directly on the other device, but it can also be accompanied by other devices therebetween. When it is said that a device is "directly" on another device, there are no other devices therebetween.

[0075] As used in this document, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. It will be further understood that the terms "comprises," "comprising," "includes," and / or "including," when used herein, specify the presence of stated features, steps, operations, elements, components, items, and / or groups thereof, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, items, and / or groups thereof. As used herein, the terms "or" and "and / or" are to be interpreted as inclusive, i.e., as meaning either item alone, or any combination of items. Thus, "A, B or C" or "A, B and / or C" means any of the following: A; B; C; A and B; A and C; B and C; A, B and C. Only when items are mutually exclusive, i.e., when a combination of items is inherently impossible, will this definition not apply.

[0076] Although not all defined differently, technical and scientific terms used herein include technical terms and scientific terms, all terms have the same meaning as the meaning generally understood by the person skilled in the art to which the present application belongs. The terms defined in the commonly used dictionary are additionally interpreted to have a meaning consistent with the relevant technical literature and the content currently prompted, provided that no definition is made, and should not be interpreted as an ideal or very formal meaning.

[0077] Example 1

[0078] As shown in FIG. 1 and FIG. 3, the stacked OLED device in the present embodiment includes an anode layer 1, one side of the anode layer 1 is provided with a thickness of 100 nm to 200 nm of anode layer 1, and the other side of the anode layer 1 is provided with a thickness of 100 nm to 200 nm of a hole injection layer 2. The hole injection layer 2 is provided with the first light-emitting layer 100, the charge generation layer 7 and the second light-emitting layer 200 in sequence in the direction away from the anode layer 1. The first light-emitting layer 100 comprises the first hole transport layer 31 and the first electron transport layer 61 located on the side of the first hole transport layer 31 away from the anode layer 1. The second light-emitting layer 200 comprises the second hole transport layer 32 and the second electron transport layer 62 located on the side of the second hole transport layer 32 away from the anode layer 1. The charge generation layer 7 comprises the N-type charge generation layer 71 and the P-type charge generation layer 72 located on the side of the N-type charge generation layer 71 away from the anode layer 1. At least one of the N-type charge generation layer 71 and the P-type charge generation layer 72 is divided into three sub-layers. The charge generation layer 7 is doped with a conductive material, and the doping proportion in the sub-layers decreases in sequence in the direction away from the anode layer 1. The charge generation layer 7 as a key part in the stacked OLED device provides electrons and holes for the first light-emitting layer 100 and the second light-emitting layer 200 respectively. At least a part of the charge generation layer 7 is divided into multiple thin layers, so as to adjust the moving speed of at least one kind of carrier in the charge generation layer 7. By adjusting the thickness, the doping material and the doping proportion, the carrier speed between adjacent layers can be matched, so as to prevent the obvious voltage drop at the interface between the adjacent two layers caused by the charge accumulation, thereby avoiding the high voltage and low life of the OLED device.

[0079] The P-type charge generation layer 72 is divided into the first P-type sub-layer 73, the second P-type sub-layer 74 and the third P-type sub-layer 75 in the direction away from the anode layer 1. The P-type charge generation layer 72 is divided into three layers to adjust the carrier speed in the P-type charge generation layer 72.

[0080] The material of the P-type charge generation layer 72 is the NDP-9 material which is the same as the first hole transport layer 31 and the second hole transport layer 32 and is doped with HAT-CN. The P-type charge generation layer 72 uses the same material as the hole transport layer, which reduces the types of materials used in the production process, and adjusts the carrier speed by doping HAT-CN.

[0081] In other embodiments, the material of the second charge generation layer 72 can also be other organic materials according to the process requirements.

[0082] In the embodiment, the thickness of the third P-type sub-layer 75 is The thickness of the first P-type sub-layer 73 and the second P-type sub-layer 74 is The P-type sub-layer farthest from the anode layer 1 is the thinnest to adapt to the carrier mobility of the hole transport layer adjacent thereto.

[0083] In other embodiments, the thicknesses of the first P-type sub-layer 73 and the second P-type sub-layer 74 are both greater than the thickness of the third P-type sub-layer 75, and the thicknesses of the first P-type sub-layer 73, the second P-type sub-layer 74 and the third P-type sub-layer 75 can be adjusted as required by the process.

[0084] In the present embodiment, the overall doping ratio in the N-type charge generation layer 71 and the P-type charge generation layer 72 is 10%, wherein the doping ratio of the third P-type sub-layer 75 is 5%, the doping ratio of the second P-type sub-layer 74 is 15%, and the doping ratio of the first P-type sub-layer 73 is 30%. The doping ratio in the P-type charge generation layer 72 is appropriate, which adjusts the carrier rate and avoids the occurrence of transverse crosstalk due to excessive conductivity; the doping ratio in the N-type charge generation layer 71 is appropriate, which adjusts the carrier rate and avoids the reduction of device efficiency due to the absorption of visible light by the doping material.

[0085] In other embodiments, the overall doping ratio in the N-type charge generation layer 71 and the P-type charge generation layer 72 is 1-15%, and the doping ratios of the first P-type sub-layer 73, the second P-type sub-layer 74 and the third P-type sub-layer 75 can be adjusted within the range of 0-35% as required by the process.

[0086] The thicknesses of the N-type charge generation layer 71 and the P-type charge generation layer 72 are both In other embodiments, the thicknesses of the N-type charge generation layer 71 and the P-type charge generation layer 72 are both The thicknesses of the layers can be adjusted as required by the process.

[0087] In the present embodiment, the first light-emitting layer 100 has, in sequence from the anode layer 1, a first hole transport layer 31 with a thickness of , a first electron blocking layer 41 with a thickness of , a first pixel light-emitting layer 51, a first electron transport layer 61 with a thickness of , and the second light-emitting layer 200 has, in sequence from the anode layer 1, a second hole transport layer 32 with a thickness of , a second electron blocking layer 42 with a thickness of , a second pixel light-emitting layer 52, a second electron transport layer 62 with a thickness of ; the first pixel light-emitting layer 51 includes a first blue pixel light-emitting layer 511 with a thickness of , a first green pixel light-emitting layer 521 with a thickness of , and a first red pixel light-emitting layer 531 with a thickness of ; and the second pixel light-emitting layer 52 includes a second blue pixel light-emitting layer 512 with a thickness of , a second green pixel light-emitting layer 522 with a thickness of , and a second red pixel light-emitting layer 532 with a thickness of a second red pixel light emitting layer 532.

[0088] A green pixel light emitting adjusting layer 81 with a thickness of is arranged between the second hole transport layer 32 and the second electron blocking layer 42, and a red pixel light emitting adjusting layer 82 with a thickness of is arranged between the second hole transport layer 32 and the second electron blocking layer 42, and a red pixel light emitting adjusting layer 82 with a thickness of A cathode layer 9 with a thickness of and a light extraction layer 10 with a thickness of

[0089] As shown in Table 1, the performance of the stacked OLED device in the present embodiment is compared with that of the stacked OLED device in the prior art.

[0090] Table 1

[0091] Embodiment 2

[0092] The difference between the present embodiment and Embodiment 1 is that:

[0093] The doping ratio of the third P-type sublayer 75 is 3%, the doping ratio of the second P-type sublayer 74 is 12%, and the doping ratio of the first P-type sublayer 73 is 35%.

[0094] As shown in Table 2, the performance of the stacked OLED device in the present embodiment is compared with that of the stacked OLED device in the prior art.

[0095] Table 2

[0096] Embodiment 3

[0097] As shown in FIG. 2, the difference between the present embodiment and Embodiment 1 is that:

[0098] The N-type charge generation layer 71 is divided into a first N-type sublayer 76, a second N-type sublayer 77 and a third N-type sublayer 78 along the direction away from the anode layer 1. The N-type charge generation layer 71 is divided into three layers to adjust the carrier velocity inside the N-type charge generation layer 71.

[0099] The material of the N-type charge generation layer 71 is the same material as the first electron transport layer 61 and the second electron transport layer 62 doped with alkali metal, and the N-type charge generation layer 71 contains arylamine compounds as the first electron transport layer 61 and the second electron transport layer 62. The N-type charge generation layer 71 uses the same material as the electron transport layer, which reduces the types of materials used in the production process, and adjusts the carrier velocity by doping alkali metal.

[0100] The thickness of the third N-type sub-layer 78 is The thickness of the first N-type sub-layer 76 and the second N-type sub-layer 77 is The N-type sub-layer farthest from the anode layer 1 is the thickest to match the carrier mobility of the P-type charge generation layer 72 adjacent thereto.

[0101] In other embodiments, the thickness of the first N-type sub-layer 76 and the second N-type sub-layer 77 is less than the thickness of the third N-type sub-layer 78, and the thickness of the first N-type sub-layer 76, the second N-type sub-layer 77 and the third N-type sub-layer 78 can be adjusted as required by the process.

[0102] In the present embodiment, the overall doping ratio in the N-type charge generation layer 71 and the P-type charge generation layer 72 is 10%, wherein the doping ratio of the third N-type sub-layer 78 is 3%, the doping ratio of the second N-type sub-layer 77 is 15%, and the doping ratio of the first N-type sub-layer 76 is 30%. The doping ratio in the charge generation layer 7 is appropriate, which adjusts the carrier velocity and avoids the absorption of visible light by the doping material to reduce the efficiency of the device.

[0103] In other embodiments, the overall doping ratio in the N-type charge generation layer 71 and the P-type charge generation layer 72 is 1-15%, and the doping ratio of the first N-type sub-layer 76, the second N-type sub-layer 77 and the third N-type sub-layer 78 can be adjusted in the range of 0-35% as required by the process.

[0104] As shown in Table 3, the performance of the stacked OLED device in the present embodiment is compared with that of the stacked OLED device in the prior art.

[0105] Table 3

[0106] Embodiment 4

[0107] The difference between the present embodiment and Embodiment 3 is that:

[0108] The doping ratio of the third N-type sub-layer 78 is 3%, the doping ratio of the second N-type sub-layer 77 is 10%, and the doping ratio of the first N-type sub-layer 76 is 35%.

[0109] As shown in Table 4, the performance of the stacked OLED device in the present embodiment is compared with that of the stacked OLED device in the prior art.

[0110] Table 4

[0111] Embodiment 5

[0112] As shown in FIG. 4, the difference between the present embodiment and Embodiment 1 is that:

[0113] The P-type charge generation layer 72 is divided into a first P-type sub-layer 73, a second P-type sub-layer 74 and a third P-type sub-layer 75 in the direction away from the anode layer 1, and the N-type charge generation layer 71 is divided into a first N-type sub-layer 76, a second N-type sub-layer 77 and a third N-type sub-layer 78 in the direction away from the anode layer 1. The charge generation layer 7 is divided into multiple thin layers, so as to adjust the moving speed of the two kinds of carriers in the charge generation layer 7; by adjusting the thickness, the doping material and the doping ratio, the carrier speed between the adjacent layers can be matched, so as to prevent the obvious pressure drop at the interface between the adjacent two layers caused by the charge accumulation, thereby avoiding the high voltage and the low service life of the OLED device.

[0114] In conclusion, the present application aims to provide a laminated OLED device, improve the structure of the laminated OLED device, improve the use effect and increase the service life.

[0115] The above is the further detailed description of the present application in combination with the specific preferred embodiments, and the specific implementation of the present application cannot be limited to these descriptions. For the ordinary skilled in the art to which the present application belongs, some simple deductions or replacements can be made without departing from the concept of the present application, and all of them shall be regarded as falling within the protection scope of the present application.

Claims

1. A stacked OLED device, characterized in that, The anode layer (1) is provided with a hole injection layer (2) on one side, and the hole injection layer (2) is provided with a first light-emitting layer (100), a charge generation layer (7) and a second light-emitting layer (200) in sequence away from the anode layer (1) on the side away from the anode layer (1); The first light-emitting layer (100) comprises a first hole transport layer (31) and a first electron transport layer (61) on the side of the first hole transport layer (31) away from the anode layer (1), and the second light-emitting layer (200) comprises a second hole transport layer (32) and a second electron transport layer (62) on the side of the second hole transport layer (32) away from the anode layer (1); The charge generation layer (7) comprises an N-type charge generation layer (71) and a P-type charge generation layer (72) on the side of the N-type charge generation layer (71) away from the anode layer (1), and at least one of the N-type charge generation layer (71) and the P-type charge generation layer (72) is divided into three sub-layers; the charge generation layer (7) is doped with a conductive material, and the doping proportion in the sub-layers decreases in sequence away from the anode layer (1).

2. The OLED device of claim 1, wherein, The P-type charge generation layer (72) is divided into a first P-type sub-layer (73), a second P-type sub-layer (74) and a third P-type sub-layer (75) in sequence away from the anode layer (1).

3. The OLED device of claim 2, wherein the first and second layers of the first electrode are formed of the same material. The material of the P-type charge generation layer (72) is the same as that of the first hole transport layer (31) and the second hole transport layer (32) and is doped with HAT-CN.

4. The OLED device of claim 2, wherein, The thickness of the first P-type sub-layer (73) and the second P-type sub-layer (74) is greater than that of the third P-type sub-layer (75).

5. The OLED device of claim 2, wherein the first and second layers of the first electrode are formed of the same material. The overall doping proportion in the P-type charge generation layer (72) is 1-15%, and the single-layer doping proportion of each sub-layer is 0-35%.

6. The OLED device of claim 1, wherein, The N-type charge generation layer (71) is divided into a first N-type sub-layer (76), a second N-type sub-layer (77) and a third N-type sub-layer (78) in sequence away from the anode layer (1).

7. The OLED device of claim 6, wherein the first and second layers of the first electrode are formed of the same material. The material of the N-type charge generation layer (71) is the same as that of the first electron transport layer (61) and the second electron transport layer (62) and is doped with an alkali metal, and the N-type charge generation layer (71) contains an arylamine compound, as does the first electron transport layer (61) and the second electron transport layer (62).

8. The OLED device of claim 6, wherein, The thickness of the first N-type sub-layer (76) and the second N-type sub-layer (77) is less than that of the third N-type sub-layer (78).

9. The OLED device of claim 6, wherein, The overall doping proportion in the N-type charge generation layer (71) is 1-15%, and the single-layer doping proportion of each sub-layer is 0-35%.

10. The OLED device of claim 1, wherein, The P-type charge generation layer (72) is divided into a first P-type sub-layer (73), a second P-type sub-layer (74) and a third P-type sub-layer (75) in a direction away from the anode layer (1), and the N-type charge generation layer (71) is divided into a first N-type sub-layer (76), a second N-type sub-layer (77) and a third N-type sub-layer (78) in a direction away from the anode layer (1).

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