Semiconductor wafer electropolishing apparatus, apparatus for plating both surfaces of glass substrate, and continuous electrolysis apparatus including same

Abstract

The present invention relates to a semiconductor wafer electropolishing apparatus. According to the present invention, the semiconductor wafer electropolishing apparatus comprises: an electropolishing chamber for electropolishing of a wafer, the electropolishing chamber having a negative electrode plate provided therein; lower caps installed at the lower side of the electropolishing chamber and having a fixing member for fixing a positive electrode plate and a wafer; a lifting means for lifting and lowering one of the lower caps of the electropolishing chamber relative to the other, so that the caps can approach and be separated from each other; and a solution injection device for performing an electropolishing process by injecting an electropolishing solution into the electropolishing chamber in a state in which the lower caps of the electropolishing chamber are brought into maximal proximity to and in close contact with each other by the lifting means.

Description

Semiconductor wafer electrolytic polishing device, glass substrate double-sided plating device, and continuous electrolytic device including the same

[0001] The present invention relates to a semiconductor wafer electropolishing device, and more particularly, to a semiconductor wafer electropolishing device having an improved structure that can increase the precision of an electropolishing process and enable continuous process performance, thereby improving wafer electroplating efficiency.

[0002] In addition, the present invention relates to a double-sided plating device for a glass substrate and a continuous electrolytic device including the same, and more particularly, to a double-sided plating device for a glass substrate for a semiconductor package having an improved structure and a continuous electrolytic device including the same, which enables double-sided plating of a glass substrate and enables double-sided plating and electrolytic polishing processes of the glass substrate to be continuously performed within one piece of equipment.

[0003] Conventional semiconductor plating processes require a chemical mechanical polishing (CMP) process to remove the excess deposition film that forms after plating. More specifically, after filling a wafer pattern through the plating process, a deposition film forms within the pattern and beyond the substrate surface, requiring removal using a CMP process.

[0004] Additionally, a technology exists for removing over-deposited films using electropolishing, a polishing technique. Electropolishing is a polishing method that utilizes electrical and chemical reactions. It involves connecting the object to be polished to a specific electrolyte as an anode and dissolving any protrusions on the anode surface to polish it.

[0005] Currently, the CMP process and electrolytic polishing process described above are the most common technologies for semiconductor plating and over-deposition film removal processes, but research to supplement these processes is also actively being conducted recently.

[0006] As part of this research, the applicant has developed an invention under application number 10-2021-0130466 entitled 'Continuous electrolytic device and method', but there is a problem that reducing gas generated during the electrolytic polishing process is adsorbed on the electrode, hindering electrolytic polishing, and thus improvement is required.

[0007] Meanwhile, a glass substrate is one of the core components of semiconductor packages, displays, or high-performance electronic devices, and refers to a substrate made of glass.

[0008] These glass substrates require a packaging process that utilizes a glass material substrate to mount semiconductor chips and perform electrical connections and protection. However, according to the packaging process according to the prior art, one side of the double-sided glass substrate is sequentially plated, which reduces plating efficiency, and the glass substrate washing, double-sided plating, and double-sided electrolytic polishing processes are not performed continuously but are individually performed using separate equipment, which has the problem of lowering the efficiency of glass substrate packaging.

[0009] [Prior Art Literature]

[0010] (Patent Document 1) Republic of Korea Patent Gazette Registration No. 10-0822651

[0011] (Patent Document 2) Republic of Korea Patent Publication No. 10-2021-0130466

[0012] (Patent Document 3) Republic of Korea Patent Gazette Registration No. 10-0822651

[0013] (Patent Document 4) Republic of Korea Patent Publication No. 10-2021-0130466

[0014] The present invention has been devised to solve the above problems, and the purpose of the present invention is to provide a semiconductor wafer electrolytic polishing device that can increase the precision of the electrolytic polishing process of a semiconductor wafer.

[0015] Another object of the present invention is to provide a semiconductor wafer electropolishing device that enables continuous performance of a plating process, a cleaning process, and an electropolishing process of a semiconductor wafer and improves the precision of the electropolishing process, thereby improving product quality and process efficiency.

[0016] Another object of the present invention is to provide a double-sided plating device for a glass substrate that enables double-sided plating of a glass substrate for a semiconductor package, and a continuous electrolytic device including the same.

[0017] Another object of the present invention is to provide a double-sided plating device for a glass substrate and a continuous electrolytic device including the same, which can continuously perform double-sided plating and electrolytic polishing processes in one device.

[0018] In order to achieve the above object, a semiconductor wafer electropolishing device according to the present invention is characterized by comprising: a polishing electrolytic chamber having a cathode plate provided therein for electropolishing a wafer; a lower cap provided on the lower side of the polishing electrolytic chamber and having a fixing member for fixing the anode plate and the wafer; an elevating means for elevating one of the lower caps of the polishing electrolytic chamber relative to the other to allow them to approach and separate from each other; and a solution injection device for injecting an electropolishing solution into the polishing electrolytic chamber while the lower caps of the polishing electrolytic chambers are maximally approached and in close contact with each other by the elevating means, thereby performing an electropolishing process.

[0019] The present invention preferably further includes a continuous process platform in which a plating chamber for plating the wafer and a washing chamber for washing the wafer are installed together with the polishing electrolytic chamber.

[0020] It is preferable that the above polishing electrolysis chamber is fixedly installed on the continuous process platform, the lower cap is installed so as to be able to be lifted on the continuous process platform, and the lifting means includes a cylinder device that lifts the lower cap relative to the polishing electrolysis chamber.

[0021] It is preferable that the present invention further include a solution discharge device for discharging the electrolytic polishing solution within the polishing electrolytic chamber after performing the electrolytic polishing process.

[0022] It is preferable that the above cathode plate be rotatably installed in the above polishing electrolysis chamber.

[0023] In addition, a double-sided plating device for a glass substrate according to the present invention for achieving the above object is characterized by including a plating chamber in which a receiving space for receiving a plating solution is formed and a pair of plating anode plates are arranged facing each other in the receiving space; and a working electrode arranged at the center of the plating chamber with the glass substrate mounted thereon.

[0024] The present invention preferably includes an elevating means for elevating the working electrode relative to the plating chamber so that it can be selectively placed in a receiving space of the plating chamber.

[0025] It is preferable that the above-mentioned plating anode plates and working electrodes are arranged so that their large-area surfaces face each other.

[0026] The above working electrode preferably includes a pair of jigs that surround the edge of the glass substrate in a state where both sides of the glass substrate are close to each other so that the glass substrate can be exposed to the outside, and it is preferable that at least one of the jigs has a stepped groove formed therein for seating the edge of the glass substrate.

[0027] The above jigs are formed in a structure symmetrical to each other, and each includes a stepped groove portion in which an edge of a glass substrate is seated, and it is preferable that a spacer for adhesion is provided in one of the stepped groove portions to adhere the glass substrate to the other stepped groove portion.

[0028] The present invention is for closing the open upper part of the plating chamber, and preferably includes a pair of cap members that are slidably installed in the plating chamber so as to be approachable and spaced apart from each other.

[0029] Meanwhile, a continuous electrolytic device according to the present invention for achieving the above-described purpose preferably includes: a glass substrate double-sided plating device as described above; and an electrolytic polishing chamber in which a receiving space for receiving an electrolytic polishing solution is formed, a pair of cathode plates for electrolytic polishing are arranged facing each other in the receiving space, and the working electrode having a glass substrate plated by the glass substrate double-sided plating device is arranged between the cathode plates for electrolytic polishing.

[0030] The present invention preferably includes a continuous process platform in which the plating chamber and the polishing electrolysis chamber are installed, and a transfer arm for transferring the glass substrate to each chamber is movably installed.

[0031] It is preferable that the cathode plates for the above electrolytic polishing are rotatably installed in the electrolytic polishing chamber.

[0032] The present invention is intended to electrically connect the cathode plates for electrolytic polishing to each other, and preferably includes a connecting rod electrically connected to a voltage application device and rotatably installed at the center of the electrolytic polishing chamber.

[0033] The semiconductor wafer electropolishing device according to the present invention having the configuration described above, unlike the prior art, places the cathode plate, where a reducing gas is generated, on the upper side and the anode plate, where polishing takes place, on the lower side, thereby preventing bubbles generated from the cathode plate from approaching the anode plate, thereby fundamentally blocking the electropolishing process from being interfered with by the bubbles, thereby improving the precision and efficiency of the electropolishing process. In addition, the device organically connects an elevation means and a solution injection means, which are not employed in the prior art, to the polishing electrolytic chamber and the lower cap, so that the lower cap is brought close to and sealed against the polishing electrolytic chamber by the elevation means, and then the electrolyte is filled by the solution injection means, and then the electropolishing process is performed. As a result, the problem of not being able to pre-fill the electrolyte due to the adoption of a structure in which the lower side of the polishing electrolytic chamber is open is overcome, and the precision of the electropolishing process is further improved by adopting a method of filtering and re-injecting the used electrolyte.

[0034] Meanwhile, the double-sided plating device for a glass substrate according to the present invention having the configuration described above places a cathode plate with a glass substrate mounted thereon at the center of a plating chamber, places anode plates on opposite sides of the cathode plate with the cathode plate at the center, and thereby enables simultaneous plating of both sides of the glass substrate, thereby producing an effect of relatively improving the efficiency of the plating process and the semiconductor device packaging process compared to the conventional technology of sequentially plating one side of a glass substrate.

[0035] In addition, according to an embodiment in which a continuous process platform capable of continuously performing a plating process and an electropolishing process is provided, the effect of continuously performing a plating process, a washing process, and an electropolishing process with one piece of equipment is achieved without adding separate equipment.

[0036] FIG. 1 is a perspective view of a continuous electrolytic device including a semiconductor wafer electrolytic polishing device according to one embodiment of the present invention.

[0037] Figure 2 is a cross-sectional view taken along line Ⅱ-Ⅱ of Figure 1.

[0038] Figure 3 is a perspective view of a semiconductor wafer electrolytic polishing device according to one embodiment of the present invention.

[0039] FIG. 4 is a drawing for explaining a polishing process implemented by one embodiment of the present invention.

[0040] FIG. 5 is a drawing for explaining a plating process in a continuous electrolytic process including an electrolytic polishing process performed by the present embodiment.

[0041] Figure 6 is a drawing for explaining the coupling relationship between a cathode plate and an electrolytic polishing chamber employed in another embodiment of the present invention.

[0042] FIG. 7 is a drawing for explaining a semiconductor wafer electrolytic polishing device according to another embodiment of the present invention.

[0043] Figure 8 is a block diagram for explaining a semiconductor wafer electrolytic polishing method according to an embodiment of the present invention in process order.

[0044] Figure 9 is a partial cross-sectional side view for explaining the configuration of a double-sided plating device for a glass substrate according to one embodiment of the present invention.

[0045] Figure 10 is a cross-sectional view illustrating a working electrode employed in one embodiment of the present invention.

[0046] Fig. 11 is a cross-sectional view illustrating another embodiment of a working electrode employed in one embodiment of the present invention.

[0047] Figure 12 is a drawing for explaining a cap member employed in one embodiment of the present invention.

[0048] FIG. 13 is a drawing for explaining a continuous process platform employed in a continuous electrolytic cell according to one embodiment of the present invention.

[0049] Figure 14 is a drawing for explaining an electrolytic polishing chamber employed in one embodiment of the present invention.

[0050] Figure 15 is a drawing for explaining a washing chamber employed in one embodiment of the present invention.

[0051] Figure 16 is a drawing explaining an electrolytic polishing cathode plate employed in another embodiment of the present invention.

[0052] To ensure a clear understanding of the present invention, descriptions of known techniques related to the features of the present invention will be omitted in the following description. The following examples are provided as detailed descriptions to aid understanding of the present invention and should not be construed as limiting the scope of the invention. Therefore, equivalent inventions that perform the same functions as the present invention will also fall within the scope of the invention.

[0053] In the following description, identical identifiers denote identical configurations, and unnecessary redundant descriptions and descriptions of known technologies will be omitted. Furthermore, descriptions of each embodiment of the present invention below that overlap with the description of the technology underlying the invention will also be omitted.

[0054] Hereinafter, a semiconductor wafer electrolytic polishing device according to an embodiment of the present invention will be described in detail with reference to the attached drawings.

[0055] FIG. 1 is a perspective view of a continuous electrolytic device including a semiconductor wafer electrolytic polishing device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, FIG. 3 is a perspective view of a semiconductor wafer electrolytic polishing device according to an embodiment of the present invention, and FIG. 4 is a drawing for explaining a polishing process implemented by an embodiment of the present invention.

[0056] As well illustrated in FIGS. 3 and 4, a semiconductor wafer electrolytic polishing device according to one embodiment of the present invention is for electrolytically polishing a semiconductor wafer (W) that has been electroplated using electrical and chemical methods, and comprises a polishing electrolytic chamber (30), a lower cap (32), an elevating means (55), and a solution injection device (60).

[0057] The above polishing electrolytic chamber (30) is used in a polishing process that dissolves and electrolytically polishes the excess plating film formed on the surface of a wafer (W) after performing a wafer (W) plating process, and has a cathode plate (31) provided inside.

[0058] The above lower cap (32) is installed on the lower side of the polishing electrolysis chamber (30) and includes a fixing member (32b) for fixing the positive electrode plate (32a) and the wafer (W).

[0059] When a positive electrode is applied to the positive electrode plate (32a) and a negative electrode is applied to the negative electrode plate (31) by a power supply (50) to supply current, the excess gold film formed on the surface of the wafer (W) is dissolved by a redox reaction on the positive electrode side (positive electrode plate_32a), and a large amount of bubbles (reducing gas) are generated on the negative electrode side (negative electrode plate_31), which is the counter electrode.

[0060] In this way, according to one embodiment of the present invention, unlike the prior art, by placing the cathode plate (31) where reducing gas is generated at the top and the anode plate (32a) where polishing takes place at the bottom, bubbles generated at the cathode plate (31) are prevented from approaching the anode plate (32a), thereby fundamentally blocking the electropolishing process from being interfered with by bubbles, thereby improving the precision and efficiency of the electropolishing process.

[0061] However, this characteristic arrangement structure of the present invention cannot be implemented simply by changing the vertical positions of the negative plate (31) and the positive plate (32a) differently from the prior art, and it must be implemented so as to overcome technical difficulties (impossibility of pre-filling of electrolyte due to adoption of a structure in which the lower side of the polishing electrolysis chamber is open) that cannot be easily conceived by a person having ordinary skill in the art of the present invention.

[0062] That is, the present invention employs an elevating means (55) and a solution injection device (60) to solve these technical difficulties.

[0063] The above-mentioned lifting means (55) is used to raise or lower one of the lower caps (32) of the polishing electrolysis chamber (30) relative to the other to bring them closer and further apart from each other, as shown in (a) and (b) of FIG. 4, and can be implemented as a cylinder device or a device composed of a motor and a transfer screw.

[0064] The above solution injection device (60) enables the electrolytic polishing process to be performed by injecting an electrolytic polishing solution into the polishing electrolytic chamber (30) while the lower cap (32) of the polishing electrolytic chamber (30) is brought as close as possible to each other by the lifting means (55), as shown in (c) of FIG. 4.

[0065] According to an embodiment of the present invention, a semiconductor wafer electrolytic polishing device having such a configuration, when current is supplied to a power supply (50) as shown in (d) of FIG. 4 after the injection of the electrolyte (E) in FIG. 4, the surface of the wafer (W) connected to the anode plate (32a) through the fixing member (32b) is electropolished to dissolve the overplating film generated during the plating process, thereby enabling the electrolytic polishing process to be performed. In addition, when the electrolytic polishing process is performed, the bubbles generated on the cathode plate (31) are prevented from reaching the anode plate (32a), thereby preventing the polishing efficiency from being reduced by the bubbles, thereby increasing the precision and efficiency of the electrolytic polishing process. In addition, by organically combining an elevating means (55) and a solution injection device (60) that are not employed in the prior art with the polishing electrolytic chamber (30) and the lower cap (32), the lower cap (32) is brought close to and pressed against the polishing electrolytic chamber (30) by the elevating means (55). Since the electrolytic polishing process is performed after filling the electrolyte (E) with the solution injection device (60), the problem of not being able to pre-fill the electrolyte (E) due to the structure in which the lower side of the polishing electrolytic chamber (30) is open is overcome, and the precision of the electrolytic polishing process can be further improved by adopting a method of filtering and re-injecting the used electrolyte (E).

[0066] As shown in FIGS. 1 and 2, the present embodiment further includes a continuous process platform (40) in which a plating chamber (10) for plating the wafer (W) and a washing chamber for washing the wafer (W) are installed together with the polishing electrolytic chamber (30), thereby having the advantage of being able to continuously perform a plating process, a washing process, and an electrolytic polishing process without adding separate equipment.

[0067] The polishing electrolysis chamber (30) employed in this embodiment is fixedly installed on the continuous process platform (40), the lower cap (32) is installed so as to be able to be lifted on the continuous process platform (40), and the lifting means (55) is, for example, a cylinder device, and serves to lift the lower cap (32) relative to the polishing electrolysis chamber (30) as shown in (b) of FIG. 4.

[0068] This embodiment further includes a solution discharge device (70) for discharging the electrolytic polishing solution within the polishing electrolytic chamber (30) after performing the electrolytic polishing process, thereby having the advantage of being able to repeatedly plate a large number of wafers (W) through a continuous process.

[0069] FIG. 5 is a drawing for explaining a plating process in a continuous electrolytic process including an electrolytic polishing process performed by the present embodiment.

[0070] That is, a plating device for performing a plating process includes a plating chamber (10) in which a plating solution and an anode plate (11) are provided, a cathode plate (12) provided on the upper side of the plating chamber (10), and a fixing member (13).

[0071] A plating device having such a configuration, in a state as shown in (a) of FIG. 5, through a wafer distribution process by a transfer arm (42), a wafer (W) is fixed to a fixing member (13) on the plating device side, so that a state as shown in (b) of FIG. 5 is achieved, and then, as shown in (c) of FIG. 5, the cathode plate (12) is rotated so that the wafer surface faces the plating solution side, and then, as shown in (d) of FIG. 5, the cathode plate (12) is lowered so that the wafer surface is in contact with the plating solution, and current is supplied from a power supply, so that a film is formed on the wafer surface by a redox reaction, thereby performing electrolytic plating.

[0072] Meanwhile, FIG. 6 is a drawing for explaining the coupling relationship between a cathode plate and an electrolytic polishing chamber employed in another embodiment of the present invention.

[0073] As shown in this drawing, the cathode plate (132) employed in this embodiment is rotatably installed in the polishing electrolytic chamber (130), thereby enabling a more precise electrolytic polishing process to be performed by removing bubbles attached to the cathode plate (132).

[0074] FIG. 7 is a drawing for explaining a semiconductor wafer electrolytic polishing device according to another embodiment of the present invention.

[0075] This embodiment is for electrolytic polishing a wafer (W), and comprises a polishing electrolytic chamber (230), an upper cap (232), and a rotation means (300).

[0076] The above polishing electrolytic chamber (230) is arranged in a state separated from the upper cap (232), as shown in (a) to (c) of FIG. 7, and a cathode plate (231) and polishing electrolyte (E) are provided inside.

[0077] The upper cap (232) is installed on the upper side of the polishing electrolysis chamber (230) and has a fixing member (232b) for fixing the anode plate (232a) and the wafer (W).

[0078] As shown in (c) of FIG. 7, after the surface of the wafer (W) is positioned toward the polishing electrolyte (E) side by the rotation of the upper cap (232), as shown in (d) of FIG. 7, the surface of the wafer (W) is placed in contact with the polishing electrolyte (E) stored in the polishing electrolytic chamber (230) by lowering the upper cap (232), and the rotating means (300) rotates the polishing electrolytic chamber (230) and the upper cap (232) together, as shown in (e) of FIG. 7, to change the positions of the negative electrode plate (231) and the positive electrode plate (232a) by 180 degrees.

[0079] In this state, when current is supplied through a power supply, similar to the electrolytic polishing process performed by the embodiment described above, the negative electrode plate (231) where bubbles are generated is arranged above the negative electrode plate (231) where polishing occurs, thereby preventing the generated bubbles from reaching the positive electrode plate (232a), thereby preventing the polishing efficiency from being reduced by the bubbles, thereby improving the precision and efficiency of the electrolytic polishing process.

[0080] The rotating means employed in this embodiment can be implemented in various configurations, but it has the advantage of being able to change the arrangement of the negative plate (231) and the positive plate (232a) with only the binding chamber (310) and the rotating device (320) for rotating the binding chamber (310) in which the polishing electrolysis chamber (230) and the upper cap (232) are accommodated, without the lifting means and solution injection device employed in the embodiment described above.

[0081] Figure 8 is a block diagram for explaining a semiconductor wafer electrolytic polishing method according to an embodiment of the present invention in process order.

[0082] As illustrated in this drawing, a semiconductor wafer electrolytic polishing method according to one embodiment of the present invention comprises a component placement step (S1), a wafer fixing step (S2), a contacting step (S3), a solution injection step (S4), and a polishing step (S5).

[0083] As shown in (a) of Fig. 4 and Fig. 8, in the component placement step (S1), a polishing electrolytic chamber (30) in which a cathode plate is arranged is positioned on the upper side of a lower cap (32) in which a positive plate is provided, and in the wafer fixing step (S2), a process of fixing a plated wafer to a fixing member (32b) of the lower cap (32) is performed.

[0084] As shown in (b) of FIG. 4 and FIG. 8, in the adhesion step (S3), a process is performed in which one of the polishing electrolytic chamber (30) and the lower cap (32) is brought closer to the other side to adhere the two elements to each other, and as shown in (c) of FIG. 4 and FIG. 8, in the solution injection step (S4), a process is performed in which an electrolytic polishing solution is injected into the polishing electrolytic chamber (30) while the polishing electrolytic chamber (30) and the lower cap (32) are in adhesion, and as shown in (d) of FIG. 4 and FIG. 8, in the polishing step (S5), a process is performed in which a voltage is applied to the positive plate (32a) and the negative plate (31) to polish the plated wafer surface through electrical and chemical reactions.

[0085] This embodiment having such a configuration enables the electropolishing process to be performed by dissolving the overplating film generated during the plating process by electropolishing the wafer surface, and also prevents bubbles generated on the cathode plate (31) during the electropolishing process from reaching the anode plate (32a), thereby preventing the polishing efficiency from being reduced by the bubbles, thereby increasing the precision and efficiency of the electropolishing process.

[0086] In addition, the present embodiment further includes a solution discharge step for discharging the electrolytic polishing solution contained in the polishing electrolytic chamber (30) after the polishing step (S5), thereby having the advantage of being able to repeatedly plate a large number of wafers through a continuous process.

[0087] Meanwhile, the continuous electrolytic device including the present embodiment comprises, as well as illustrated in FIGS. 1 and 2, the semiconductor wafer electrolytic polishing device described above, a plating chamber (10), a cleaning chamber (20), and a continuous process platform (40).

[0088] The above plating chamber (10) is for plating the wafer (W) before performing a polishing process on the wafer (W), and is arranged coaxially adjacent to the polishing electrolysis chamber (30).

[0089] The above cleaning chamber (20) is for cleaning the wafer (W) before performing the polishing process by the polishing electrolysis chamber (30) after performing the plating process by the plating chamber (10), and is placed between the plating chamber (10) and the polishing electrolysis chamber (30).

[0090] The above continuous process platform (40) is installed with the plating chamber (10), the washing chamber (20), and the polishing electrolysis chamber (30), and a transfer arm (42) for transferring the wafer (W) to each chamber is installed movably.

[0091] A continuous electrolytic device according to an embodiment of the present invention having such a configuration has the advantage of improving product quality and process efficiency by enabling continuous performance of a plating process, a washing process, and an electrolytic polishing process without separate equipment, in addition to the advantages provided by the electrolytic polishing device described above.

[0092] Hereinafter, a double-sided plating device for a glass substrate according to an embodiment of the present invention will be described in detail with reference to the attached drawings.

[0093] FIG. 9 is a partial cross-sectional side view for explaining the configuration of a double-sided plating device for a glass substrate according to an embodiment of the present invention, FIG. 10 is a cross-sectional view for explaining a working electrode employed in an embodiment of the present invention, FIG. 11 is a cross-sectional view for explaining another implementation of the working electrode employed in an embodiment of the present invention, and FIG. 12 is a drawing for explaining a cap member employed in an embodiment of the present invention.

[0094] As shown in these drawings, a double-sided plating device for a glass substrate according to one embodiment of the present invention is for double-sided plating a glass substrate (22), and comprises a plating chamber (1) and a working electrode (2).

[0095] The above plating chamber (1) has a receiving space formed to receive a plating solution for plating an organic substrate, and a pair of plating anode plates (11) are arranged facing each other in the receiving space.

[0096] The above working electrode (2) refers to a cathode plate corresponding to the counter electrode of the plating anode plate (11), and is placed at the center of the plating chamber (1) with the glass substrate (22) mounted thereon.

[0097] When a voltage is applied between the above-described plating anode plates (11) and cathode plates, a film is formed on the surface of the glass substrate (22) through a redox reaction. Meanwhile, since the glass substrate (22) is an insulator and non-conductive, a metal seed layer forming process is required for electroplating. As the metal seed layer, a combination of tantalum (Ta) / copper (Cu) or titanium (Ti) / copper (Cu) is mainly used, but the present invention is not limited thereto, and it goes without saying that the metal seed layer can be formed with various combinations of materials.

[0098] A double-sided plating device for a glass substrate according to an embodiment of the present invention having such a configuration places a cathode plate on which a glass substrate (22) is mounted in the center of a plating chamber (1) and places anode plates on opposite sides of the cathode plate, thereby enabling simultaneous plating of both sides of the glass substrate (22), thereby having the advantage of relatively improving the efficiency of the plating process and the semiconductor device packaging process compared to a conventional technology that sequentially plates one side of a glass substrate (22).

[0099] This embodiment comprises a means for moving and elevating the working electrode (2) on which the glass substrate (22) is mounted, so that the plating process described above as well as the washing and electrolytic polishing processes can be performed continuously. The moving means can be implemented, for example, by a configuration such as a transfer arm employed in a continuous process platform (5) described later.

[0100] The above-mentioned lifting means lifts the working electrode (2) relative to the plating chamber (1) so that it can be selectively placed in the receiving space of the plating chamber (1), and can be implemented by a device including a cylinder device (32) or a motor (31) and a transfer screw.

[0101] This embodiment, which includes such an elevating means, is configured to selectively accommodate a working electrode (2) (cathode plate) provided with a glass substrate (22) in a plating chamber (1) using the elevating means, thereby having the advantage of enabling a washing process or an electrolytic polishing process to be continuously performed after a plating process.

[0102] In this embodiment, the above-described plating anode plates (11) and the working electrode (2) (cathode plate) are configured so that their surfaces with large areas face each other, thereby enabling double-sided plating of a glass substrate (22).

[0103] The above working electrode (2) can be implemented by various configurations, but in this embodiment, it is implemented by a configuration including a glass substrate (22) and a jig (21) on which the glass substrate (22) is mounted.

[0104] That is, each jig (21) has a structure in which a through hole is formed in the center so that both sides of the glass substrate (22) can be exposed to the outside, and the surface defining the through hole wraps around the edge of the glass substrate (22) when they are close to each other.

[0105] At least one of the above jigs (21) has a stepped groove (211) formed on which the edge of the glass substrate (22) is seated.

[0106] A double-sided plating device for a glass substrate according to an embodiment of the present invention having such a configuration is configured so that the fixing work of the glass substrate (22) can be performed in the process of bringing a pair of jigs (21) close to each other without performing a separate fixing work for fixing the glass substrate (22), and thus the efficiency of the part preparation process for performing the plating process is improved, thereby ultimately having the advantage of being able to improve the efficiency of the plating process and the continuous process including plating, washing, and electrolytic polishing.

[0107] The jigs (21) employed in this embodiment are formed in a structure symmetrical to each other, and each includes a stepped groove portion (211) in which the edge of the glass substrate (22) is seated. It is preferable that a spacer (212) for adhesion is provided in one of the stepped groove portions (211) to adhere the glass substrate (22) to the other stepped groove portion (211).

[0108] This embodiment having such a configuration is configured so that the glass substrate (22) can be fixed tightly by a spacer (212) for adhesion provided on another jig (21) while the glass substrate (22) is secured in the step groove (211) of one of the jigs (21), and thus has the advantage of being able to improve the efficiency of the part preparation process for implementing the plating process even with a simple configuration.

[0109] Meanwhile, a double-sided plating device for a glass substrate according to another embodiment of the present invention comprises a pair of cap members (4) for selectively closing the open upper portion of a plating chamber (1). In addition, each cap member (4) is formed with an interference prevention groove (41) for preventing interference with the center of the working electrode (2) when they are close to each other.

[0110] Each of the above cap members (4) is slidably installed in the plating chamber (1) so as to be approachable and spaced apart from each other, and serves to selectively open and close the plating chamber (1). That is, when a working electrode (2) is to be introduced into the accommodation space of the plating chamber (1), the cap members (4) are moved in a direction away from each other so that the accommodation space is opened, and when the working electrode (2) is introduced into the accommodation space, the cap members (4) are moved in a direction approaching each other so that the accommodation space is closed.

[0111] Hereinafter, a continuous electrolysis device according to one embodiment of the present invention will be described in detail.

[0112] FIG. 13 is a drawing for explaining a continuous process platform employed in a continuous electrolytic process according to one embodiment of the present invention, FIG. 14 is a drawing for explaining an electrolytic polishing chamber employed in one embodiment of the present invention, and FIG. 15 is a drawing for explaining a cleaning chamber employed in one embodiment of the present invention.

[0113] The continuous electrolytic device according to the present embodiment comprises a glass substrate double-sided plating device described above and an electrolytic polishing chamber (6).

[0114] The above electropolishing chamber (6) has a receiving space formed to receive an electropolishing solution, and a pair of cathode plates for electropolishing are arranged facing each other in the receiving space. A working electrode (2) equipped with a glass substrate (22) plated by the glass substrate double-sided plating device is arranged between the cathode plates for electropolishing.

[0115] This electropolishing chamber (6) enables the performance of an electropolishing (Electropolishing22) process that electrochemically removes a metal surface to obtain a smooth and clean surface, and selectively dissolves and flattens over-plated metal on the surface of a glass substrate (22).

[0116] This embodiment comprises a continuous process platform (5) that enables the plating process and electropolishing process described above to be performed continuously.

[0117] The plating chamber (1) and the polishing electrolysis chamber are installed on the above continuous process platform (5), and a transfer arm is movably installed to transfer the glass substrate (22) to each chamber.

[0118] This embodiment having this configuration has the advantage of being able to continuously perform the plating process, the washing process, and the electrolytic polishing process with one piece of equipment without adding separate equipment.

[0119] The cathode plates for electrolytic polishing employed in this embodiment are installed in a fixed position without being rotated within the electrolytic polishing chamber (6), but in another embodiment of the present invention, as well illustrated in FIG. 8, the cathode plates for electrolytic polishing may be configured to be installed rotatably in the electrolytic polishing chamber (6).

[0120] In this way, according to the embodiment in which the electropolishing cathode plates (61) are rotatably installed in the electropolishing chamber (6), it is expected that the electropolishing process can be performed more precisely as bubbles adhering to the electropolishing cathode plates (61) can be removed during the electropolishing process.

[0121] It is preferable that the continuous electrolysis device according to another embodiment of the present invention be provided with a connecting rod (73) for electrically connecting the respective cathode plates (71) for electrolytic polishing to each other.

[0122] Each of the above connecting rods (73) has one side connected to the electrolytic polishing cathode plate (71) placed inside the electrolytic polishing chamber (6) and the other side exposed to the outside of the electrolytic polishing chamber (6), and is electrically connected to each other to a voltage application device and is rotatably installed in the electrolytic polishing chamber (6).

[0123] This embodiment having such a configuration has the advantage of being able to smoothly remove bubbles stuck to the electropolishing cathode plate (71) even with a simple configuration, as each electropolishing cathode plate (71) can be rotated by applying a rotational force to the connecting rod (73).

[0124] In particular, the present embodiment includes a means for overcoming a problem resulting from the implementation of individual rotational motions of the electrolytic polishing cathode plates (71), namely, a disadvantage in that the size of the electrolytic polishing chamber (6) becomes large because a large rotation space must be secured according to the size of the cathode plates.

[0125] That is, the present embodiment comprises a means for enabling the pair of electropolishing cathode plates (71) to rotate without affecting the size of the electropolishing chamber (6), including a connecting plate (72) connecting the pair of electropolishing cathode plates (71) and a connecting rod (73) having one side connected to the center of the connecting plate (72) and the other side rotatably installed in the electropolishing chamber (6).

[0126] Although various embodiments of the present invention have been described above, the embodiments and the drawings attached to the present specification only clearly show a part of the technical idea included in the present invention, and it will be obvious that all modified examples and specific embodiments that can be easily inferred by a person skilled in the art within the scope of the technical idea included in the specification and drawings of the present invention are included in the scope of the rights of the present invention.

Claims

1. For electrolytic polishing of wafers. A polishing electrolytic chamber having a cathode plate provided inside; A lower cap installed on the lower side of the above polishing electrolytic chamber and having a fixing member for fixing the anode plate and wafer; An elevating means for elevating one of the lower caps of the above polishing electrolytic chamber relative to the other to allow them to approach and be spaced apart from each other; and A semiconductor wafer electropolishing device characterized by including a solution injection device that injects an electropolishing solution into the polishing electropolishing chamber while the lower cap of the polishing electropolishing chamber is brought into maximum contact with each other by the lifting means, thereby performing an electropolishing process.

2. In paragraph 1, A semiconductor wafer electropolishing device further comprising a continuous process platform in which a plating chamber for plating the wafer and a washing chamber for washing the wafer are installed together with the polishing electrolytic chamber.

3. In accordance with paragraph 2, The above polishing electrolysis chamber is fixedly installed on the continuous process platform, and the lower cap is installed so as to be able to be lifted on the continuous process platform. A semiconductor wafer electrolytic polishing device characterized in that the above lifting means includes a cylinder device that lifts the lower cap relative to the polishing electrolytic chamber.

4. In paragraph 1, A semiconductor wafer electropolishing device further comprising a solution discharge device for discharging the electropolishing solution within the polishing electrolytic chamber after performing the electropolishing process.

5. In paragraph 1, A semiconductor wafer electrolytic polishing device, characterized in that the cathode plate is rotatably installed in the polishing electrolytic chamber.

6. For double-sided plating of glass substrates. A plating chamber in which a space for receiving a plating solution is formed and a pair of plating anode plates are arranged facing each other in the space; and A double-sided plating device for a glass substrate, characterized in that it includes a working electrode positioned at the center of the plating chamber while the glass substrate is mounted thereon.

7. In paragraph 6 A double-sided plating device for a glass substrate, characterized by including an elevating means for elevating a working electrode having the glass substrate mounted thereon relative to a plating chamber so that the working electrode is selectively placed in a receiving space of the plating chamber.

8. In paragraph 6, A double-sided plating device for a glass substrate, characterized in that the above-mentioned plating anode plates and working electrodes have surfaces with large areas facing each other.

9. In paragraph 6, The above working electrode includes a pair of jigs that surround the edge of the glass substrate in a state where both sides of the glass substrate are exposed to the outside, A double-sided plating device for a glass substrate, characterized in that at least one of the above jigs has a stepped groove formed therein for seating the edge of the glass substrate.

10. In paragraph 9, The above jigs are formed in a structure symmetrical to each other, and each includes a stepped groove portion in which the edge of the glass substrate is seated. A double-sided plating device for a glass substrate, characterized in that a spacer for adhesion is provided on one of the step grooves to adhere the glass substrate to the other step groove side.

11. In paragraph 6, A double-sided plating device for a glass substrate, characterized in that it includes a pair of cap members that are slidably installed in the plating chamber so as to be approachable and spaced apart from each other, for closing the open upper portion of the plating chamber.

12. A double-sided plating device for a glass substrate according to any one of clauses 6 to 11; and A continuous electrolytic device characterized by comprising an electrolytic polishing chamber in which a receiving space for receiving an electrolytic polishing solution is formed, a pair of cathode plates for electrolytic polishing are arranged facing each other in the receiving space, and the working electrode having a glass substrate plated by the glass substrate double-sided plating device is arranged between the cathode plates for electrolytic polishing.

13. In paragraph 12, A continuous electrolysis device characterized by comprising a continuous process platform on which the plating chamber and the polishing electrolysis chamber are installed, and on which a transfer arm for transferring the glass substrate to each chamber is movably installed.

14. In paragraph 12, A continuous electrolytic device characterized in that the cathode plates for electrolytic polishing are rotatably installed in the electrolytic polishing chamber.

15. In paragraph 14, A continuous electrolytic device characterized by including a connecting rod electrically connected to a voltage application device and rotatably installed at the center of the electrolytic polishing chamber for electrically connecting the cathode plates for electrolytic polishing to each other.

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