Radio-frequency drive circuit, radio-frequency power supply, and semiconductor process device

Abstract

Embodiments of the present application provide a radio-frequency drive circuit, a radio-frequency power supply, and a semiconductor process device. The radio-frequency drive circuit comprises: a signal input module, which outputs a radio-frequency drive signal and an initial enable signal; a first-stage full-bridge drive amplification module, which, when enabled, amplifies the radio-frequency drive signal and generates an amplified radio-frequency drive signal; a main-path full-bridge amplification module, which amplifies the amplified radio-frequency drive signal and generates and outputs radio-frequency power; and a signal input detection and protection module, which, upon acquiring the initial enable signal, generates a working enable signal on the basis of the amplified radio-frequency drive signal, and enables the first-stage full-bridge drive amplification module. The embodiments of the present application enable rapid response to high-frequency radio-frequency signals, provide protection for the radio-frequency drive circuit, and improve stability.

Description

A radio frequency (RF) driver circuit, an RF power supply, and a semiconductor process equipment. Technical Field

[0001] This application relates to the field of semiconductor process equipment technology, and in particular to a radio frequency drive circuit, a radio frequency power supply and a semiconductor process equipment. Background Technology

[0002] Radio frequency (RF) power supply driver circuits are high-voltage, high-frequency circuits widely used in industrial and research fields. A full-bridge driver circuit is a common architecture used to control current and voltage, and to achieve efficient power conversion. However, current full-bridge driver circuits have slow response times, and become unstable or even fail to function when the frequency of the drive signal exceeds high frequencies such as 1MHz. Furthermore, they currently lack circuit protection mechanisms, which can easily lead to abnormal circuit output. Summary of the Invention

[0003] In view of the above problems, embodiments of this application are proposed to provide a radio frequency drive circuit, a radio frequency power supply, and a semiconductor process apparatus that overcome or at least partially solve the above problems.

[0004] To address the aforementioned problems, in a first aspect of this application, an embodiment discloses a radio frequency driving circuit, comprising:

[0005] The signal input module is used to output radio frequency drive signals and initial enable signals;

[0006] A first-stage full-bridge driver amplifier module is connected to the output terminal of the signal input module and is used to amplify the radio frequency drive signal when enabled to generate an amplified radio frequency drive signal.

[0007] The main circuit full-bridge amplifier module is connected to the output terminal of the first-stage full-bridge driver amplifier module, and is used to amplify the amplified radio frequency drive signal to generate and output radio frequency power;

[0008] A signal input detection and protection module has its input terminal connected to the output terminal of the signal input module and the input terminal of the main full-bridge amplifier module, and its output terminal connected to the input terminal of the first-stage full-bridge drive amplifier module. It is used to generate a working enable signal based on the amplified radio frequency drive signal when the initial enable signal is acquired, thereby enabling the first-stage full-bridge drive amplifier module. In some embodiments, the signal input detection and protection module is further used to shut down the first-stage full-bridge drive amplifier module in response to an abnormality in the amplified radio frequency drive signal.

[0009] In some embodiments, the signal input module is used to output two radio frequency drive signals with a phase difference. The radio frequency drive circuit includes two first-stage full-bridge drive amplifier modules, which are respectively used to input the radio frequency drive signals with different phases. The first-stage full-bridge drive amplifier module includes a first full-bridge amplifier circuit and a first inverter.

[0010] The input terminal of the first inverter is connected to the signal input module to receive the corresponding radio frequency drive signal, and the output terminal of the first inverter is connected to the first full-bridge amplifier circuit. The first full-bridge amplifier circuit is used to amplify the radio frequency drive signal when enabled to generate the amplified radio frequency drive signal.

[0011] In some embodiments, the first full-bridge amplifier circuit includes two half-bridge drive circuits and a second inverter; one of the two half-bridge drive circuits is connected to the output terminal of the first inverter, and the other half-bridge drive circuit is connected to the output terminal of the first inverter through the second inverter.

[0012] The half-bridge drive circuit includes a half-bridge circuit and a logic control circuit.

[0013] The logic control circuit in one of the two half-bridge drive circuits is connected to the output terminal of the first inverter, the output terminal of the signal input detection and protection module, and the half-bridge circuit; the logic control circuit in the other half-bridge drive circuit is connected to the output terminal of the second inverter, the output terminal of the signal input detection and protection module, and the half-bridge circuit; the logic control circuit is used to turn on the half-bridge circuit according to the working enable signal and the radio frequency drive signal;

[0014] The half-bridge circuit is connected to the main full-bridge amplifier module and the first operating power supply, and is used to turn on the first operating power supply and generate the amplified radio frequency drive signal when enabled.

[0015] In some embodiments, the half-bridge circuit includes:

[0016] The first effect transistor has its drain connected to the first operating power supply, its gate connected to the output terminal of the logic control circuit, and its source connected to the main circuit full-bridge amplifier module.

[0017] The drain of the second effect transistor is connected to the source of the first effect transistor and the main full-bridge amplifier module, the gate of the second effect transistor is connected to the output terminal of the logic control circuit, and the source of the first effect transistor is grounded.

[0018] The half-bridge circuit is used to generate the amplified radio frequency drive signal when both the first effect transistor and the second effect transistor are turned on.

[0019] In some embodiments, the logic control circuit includes: a third inverter, a first AND gate, a fourth inverter, and a second AND gate; wherein,

[0020] In one of the two logic control circuits, the input terminal of the third inverter of the logic control circuit is connected to the output terminal of the second inverter, and the input terminal of the third inverter of the other logic control circuit is connected to the output terminal of the first inverter.

[0021] The first AND gate logic device has its first input terminal connected to the output terminal of the third inverter, its second input terminal connected to the output terminal of the signal input detection and protection module, and its output terminal connected to the gate of the first effect transistor.

[0022] The fourth inverter, the input terminal of which is connected to the output terminal of the third inverter;

[0023] The second AND gate logic device has its first input terminal connected to the output terminal of the fourth inverter, its second input terminal connected to the output terminal of the signal input detection and protection module, and its output terminal connected to the gate of the second effect transistor.

[0024] In some embodiments, the half-bridge drive circuit further includes:

[0025] The first voltage divider resistor is connected in series between the logic control circuit and the half-bridge circuit.

[0026] In some embodiments, the radio frequency driving circuit further includes:

[0027] An isolation driver module is located between the first-stage full-bridge driver amplifier module and the main full-bridge amplifier module, and is used to isolate the amplified RF drive signal and the RF power.

[0028] The signal input detection and protection module is connected to the isolation drive module.

[0029] In some embodiments, the isolation drive module includes an isolation transformer and an enable sampling circuit;

[0030] The primary side of the isolation transformer is connected to the first-stage full-bridge drive amplifier module, the secondary side of the isolation transformer is connected to the input terminal of the enable sampling circuit and the input terminal of the main full-bridge amplifier module, and the output terminal of the enable sampling circuit is connected to the signal input detection and protection module.

[0031] In some embodiments, the enabling sampling circuit includes:

[0032] The second voltage divider resistor is in contact with both ends of the secondary side of the isolation transformer;

[0033] The first diode has its cathode connected to one end of the second voltage divider resistor, and its anode connected to a feedback interface. The feedback interface is connected to the signal input detection and protection module and is used to detect the amplified radio frequency drive signal.

[0034] In some embodiments, the signal input module has an enable input interface for outputting the initial enable signal, and the signal input detection and protection module includes a third field-effect transistor, a fourth field-effect transistor, and an operational amplifier.

[0035] The drain of the third field-effect transistor is connected to the non-inverting input terminal of the operational amplifier and the second operating power supply; the gate of the third field-effect transistor is connected to the enable input interface; and the source of the third field-effect transistor is grounded.

[0036] The gate of the fourth field-effect transistor is connected to the enable input interface and the output terminal of the operational amplifier, the drain of the fourth field-effect transistor is connected to the enable output interface, and the source of the fourth field-effect transistor is grounded.

[0037] The enable output interface is used to output the working enable signal to the first-stage full-bridge drive amplifier module; the operational amplifier is used to send a high-level signal or a low-level signal to the fourth field-effect transistor when it receives the amplified radio frequency drive signal, based on the comparison between the amplified radio frequency drive signal and the second working power supply; the fourth field-effect transistor is used to turn off when the signal output by the operational amplifier is at the same potential as the initial enable signal, and to turn on when the signal output by the operational amplifier is at the opposite potential to the initial enable signal; the third field-effect transistor is used to turn off when the initial enable signal is input.

[0038] In some embodiments, the main road full-bridge amplification module includes:

[0039] A full-bridge rectifier circuit consisting of four field-effect transistors, wherein the input terminal of the full-bridge rectifier circuit is connected to the output terminal of the isolation drive module;

[0040] An amplifying transformer is provided, the primary side of which is connected to the first-stage full-bridge drive amplification module, and the secondary side of which is connected to the full-bridge rectifier circuit. The amplified radio frequency drive signal is divided into different field-effect transistors in the full-bridge rectifier circuit.

[0041] In some embodiments, the radio frequency driving circuit further includes:

[0042] The rectifier and filter module has its input terminal connected to the output terminal of the main full-bridge amplifier module and is used to perform rectification and filtering on the radio frequency power.

[0043] In a second aspect of this application, an embodiment of this application discloses a radio frequency (RF) power supply, which includes an RF driving circuit, a power amplifier, and an RF power sensor as described above. The output terminal of the RF driving circuit is connected to the input terminal of the power amplifier; the output terminal of the power amplifier is connected to the input terminal of the RF power sensor; and the RF power sensor is used to detect the RF power.

[0044] In a third aspect of this application, an embodiment of this application discloses a semiconductor process apparatus, the semiconductor process apparatus including a radio frequency (RF) power supply, an RF matching unit, and a process chamber, wherein the RF power supply is the aforementioned RF power supply, the RF power supply is used to generate RF power, the RF matching unit is used to load the RF power to the process chamber to excite the process gas in the process chamber to form plasma; the process chamber is used to process a wafer to be processed based on the plasma.

[0045] The embodiments of this application have the following advantages:

[0046] This application embodiment includes a signal input module for outputting a radio frequency (RF) drive signal and an initial enable signal; a first-stage full-bridge drive amplifier module connected to the output of the signal input module for amplifying the RF drive signal and generating an amplified RF drive signal when enabled; a main-path full-bridge amplifier module connected to the output of the first-stage full-bridge drive amplifier module for amplifying the amplified RF drive signal and generating and outputting RF power; and a signal input detection and protection module whose input is connected to the output of the signal input module and the input of the main-path full-bridge amplifier module, and whose output is connected to the input of the first-stage full-bridge drive amplifier module, for generating a working enable signal based on the amplified RF drive signal when the initial enable signal is obtained, thereby enabling the first-stage full-bridge drive amplifier module. By utilizing a full-bridge drive amplifier module to amplify the drive signal, the rapid switching capability of the full-bridge drive enables fast switching speeds, allowing for quick response to high-frequency RF signals. This improves the application scenarios for higher frequency outputs in RF power supplies and ensures the operational stability of the RF power supply. Furthermore, by incorporating a signal input detection and protection module, an enable signal is generated based on the detected amplified RF drive signal during RF output. The enable signal and the RF signal are simultaneously input to the first-stage full-bridge drive amplifier module, forming a closed-loop control. The first-stage full-bridge drive amplifier module maintains normal RF output, ensuring that the main full-bridge amplifier module outputs RF power and preventing erroneous pulses from the control signal output, thus protecting the circuit's safety. Attached Figure Description

[0047] Figure 1 is a structural block diagram of an embodiment of a radio frequency driving circuit according to this application;

[0048] Figure 2 is a structural block diagram of another embodiment of the radio frequency driving circuit of this application;

[0049] Figure 3 is a schematic diagram of another embodiment of the radio frequency driving circuit of this application;

[0050] Figure 4 is a schematic diagram of a half-bridge drive circuit according to another embodiment of the radio frequency drive circuit of this application.

[0051] Figure 5 is a schematic diagram of an isolation transformer according to another embodiment of the radio frequency drive circuit of this application;

[0052] Figure 6 is a schematic diagram of the signal input detection and protection module of another embodiment of the radio frequency driving circuit of this application;

[0053] Figure 7 is a structural block diagram of an embodiment of a semiconductor process equipment according to this application. Detailed Implementation

[0054] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0055] Referring to Figure 1, a structural block diagram of an embodiment of the radio frequency driving circuit of this application is shown, which may specifically include the following components:

[0056] The signal input module 100 is used to output radio frequency drive signals and initial enable signals;

[0057] The first-stage full-bridge drive amplifier module 200 is connected to the output terminal of the signal input module 100 and is used to amplify the radio frequency drive signal when enabled to generate an amplified radio frequency drive signal.

[0058] The main full-bridge amplifier module 300 is connected to the output of the first-stage full-bridge driver amplifier module 200 and is used to amplify the amplified radio frequency drive signal to generate and output radio frequency power.

[0059] The signal input detection and protection module 400 has its input terminal connected to the output terminal of the signal input module 100 and the input terminal of the main full-bridge amplifier module 300. The output terminal of the signal input detection and protection module 400 is connected to the input terminal of the first-stage full-bridge drive amplifier module 200. It is used to generate a working enable signal based on the amplified radio frequency drive signal when the initial enable signal is obtained, thereby enabling the first-stage full-bridge drive amplifier module 200.

[0060] In this embodiment, the RF driving circuit may include at least a signal input module 100, a first-stage full-bridge drive amplifier module 200, a main-path full-bridge amplifier module 300, and a signal input detection and protection module 400. The signal input module 100 is the signal input section of the RF driving circuit, capable of receiving externally input RF driving signals and corresponding enable signals, and outputting RF driving signals and initial enable signals to subsequent sections. The input terminal of the first-stage full-bridge drive amplifier module 200 is connected to the output terminal of the signal input module 100; it can receive and process the RF signals output by the signal input module 100, and can also be enabled under the drive of the signal input detection and protection module 400 or the signal input module 100. When enabled, the first-stage full-bridge drive amplifier module 200 can amplify the RF driving signal based on its internal full-bridge circuit, i.e., perform primary amplification of the RF driving signal to generate an amplified RF driving signal. The input terminal of the main full-bridge amplifier module 300 is connected to the output terminal of the first-stage full-bridge driver amplifier module 200. It receives the amplified RF drive signal from the first-stage full-bridge driver amplifier module 200, performs secondary amplification on the RF drive signal, and generates and outputs RF power. The input terminal of the signal input detection and protection module 400 is connected to the output terminal of the signal input module 100, and also to the input terminal of the main full-bridge amplifier module 300. That is, the signal input detection and protection module 400 is located between the first-stage full-bridge driver amplifier module 200 and the main full-bridge amplifier module 300. Upon receiving an initial enable signal, it connects the first-stage full-bridge driver amplifier module 200 to the signal input module 100, enabling the first-stage full-bridge driver amplifier module 200 to amplify the RF drive signal. After the first-stage full-bridge driver amplifier module 200 begins operation, its output amplified RF drive signal can be detected by the signal input detection and protection module 400.

[0061] When the signal input detection and protection module 400 detects the presence of an amplified radio frequency drive signal, it indicates that the first-stage full-bridge drive amplifier module 200 is operating normally and can continue working. Upon receiving the initial enable signal, the signal input detection and protection module 400 generates a working enable signal based on the amplified radio frequency drive signal. Based on the generated working enable signal, the signal input detection and protection module 400 enables the first-stage full-bridge drive amplifier module 200 to operate.

[0062] This embodiment of the application uses a signal input module 100 to output a radio frequency (RF) drive signal and an initial enable signal; a first-stage full-bridge drive amplifier module 200, connected to the output of the signal input module 100, amplifies the RF drive signal to generate an amplified RF drive signal when enabled; a main-path full-bridge amplifier module 300, connected to the output of the first-stage full-bridge drive amplifier module 200, amplifies the amplified RF drive signal to generate and output RF power; and a signal input detection and protection module 400, whose input is connected to the output of the signal input module 100 and the input of the main-path full-bridge amplifier module 300, and whose output is connected to the input of the first-stage full-bridge drive amplifier module 200, generates a working enable signal based on the amplified RF drive signal when the initial enable signal is obtained, enabling the first-stage full-bridge drive amplifier module 200. By using a full-bridge drive amplifier module 200 to amplify the drive signal using a full-bridge drive, the fast switching capability of the full-bridge drive enables rapid switching speed, thus allowing for quick response to high-frequency radio frequency (RF) signals. This ensures the stability of the RF power supply in high-frequency output scenarios. Furthermore, by setting up a signal input detection and protection module 400, the RF output is only enabled upon simultaneous input of the initial enable signal and the RF signal during initial operation. During RF output, a working enable signal is generated based on the detected amplified RF drive signal, replacing the initial enable signal to enable the first-stage full-bridge drive amplifier module 200. This ensures that the working enable signal is only generated when the first-stage full-bridge drive amplifier module 200 is outputting normally. Only when the working enable signal and the RF signal are simultaneously input to the first-stage full-bridge drive amplifier module 200 to form a closed-loop control does the first-stage full-bridge drive amplifier module 200 maintain RF output, allowing the main full-bridge amplifier module 300 to output RF power. This prevents erroneous pulses from the control signal output, protecting the circuit's safety.

[0063] Referring to Figure 2, a structural block diagram of another embodiment of the radio frequency driving circuit of this application is shown, which may specifically include the following components:

[0064] The signal input module 100 is used to output radio frequency drive signals and initial enable signals;

[0065] The first-stage full-bridge drive amplifier module 200 is connected to the output terminal of the signal input module 100 and is used to amplify the radio frequency drive signal when enabled to generate an amplified radio frequency drive signal.

[0066] The main full-bridge amplifier module 300 is connected to the output of the first-stage full-bridge driver amplifier module 200 and is used to amplify the amplified radio frequency drive signal to generate and output radio frequency power.

[0067] The isolation driver module 500 is located between the first-stage full-bridge driver amplifier module 200 and the main full-bridge amplifier module 300, and is used to isolate and amplify the radio frequency drive signal and radio frequency power.

[0068] The rectifier and filter module 600 has its input terminal connected to the output terminal of the main full-bridge amplifier module 300, and is used to rectify and filter the RF power.

[0069] The signal input detection and protection module 400 has its input terminal connected to the output terminal of the signal input module 100 and the isolation drive module 500. The output terminal of the signal input detection and protection module 400 is connected to the input terminal of the first-stage full-bridge drive amplifier module 200. It is used to generate a working enable signal based on the amplified radio frequency drive signal when the initial enable signal is obtained, thereby enabling the first-stage full-bridge drive amplifier module 200. In response to an abnormal amplified radio frequency drive signal, it shuts down the first-stage full-bridge drive amplifier module 200.

[0070] In this embodiment, the RF driving circuit of the RF power supply may include: a signal input module 100, a first-stage full-bridge drive amplifier module 200, an isolation drive module 500, a main-path full-bridge amplifier module 300, a rectification and filtering module 600, and a signal input detection and protection module 400. The signal input module 100, the first-stage full-bridge drive amplifier module 200, the isolation drive module 500, the main-path full-bridge amplifier module 300, and the rectification and filtering module 600 are connected sequentially; that is, the output terminal of the signal input module 100 is connected to the input terminal of the first-stage full-bridge drive amplifier module 200, the output terminal of the first-stage full-bridge drive amplifier module 200 is connected to the input terminal of the isolation drive module 500, the output terminal of the isolation drive module 500 is connected to the input terminal of the main-path full-bridge amplifier module 300, and the output terminal of the main-path full-bridge amplifier module 300 is connected to the input terminal of the rectification and filtering module 600.

[0071] The input terminal of the isolation driver module 500 is connected to the output terminal of the first-stage full-bridge driver amplifier module 200. It receives the amplified RF drive signal after being amplified by the first-stage full-bridge driver amplifier module 200 and transmits the amplified RF drive signal to the main full-bridge amplifier module 300. The isolation driver module 500 separates the processing of the RF drive signal from the processing of the RF power, thus avoiding mutual interference between the two.

[0072] The signal input module 100 is the system input section, including an RF drive signal and an initial enable signal. These signals control the RF power output of the RF power supply. The signal input module 100 can output the RF drive signal and the initial enable signal. The first-stage full-bridge drive amplifier module 200 amplifies the RF drive signal, generating an amplified RF drive signal and increasing its driving capability. For example, a 24V voltage can be used for primary amplification of the RF drive signal. The first-stage full-bridge drive amplifier module 200 is controlled by the signal input detection and protection module 400. Based on the amplified RF drive signal, the signal input detection and protection module 400 can output an enable signal to enable the first-stage full-bridge drive amplifier module 200 or turn it off. The isolation drive module 500 transmits the amplified RF drive signal while isolating the drive voltage from the main RF voltage, increasing the circuit's stability and anti-interference capability. The main full-bridge amplifier module 300 is controlled by the amplified RF drive signal transmitted from the isolation drive module 500. Under the control of the amplified RF drive signal, the main full-bridge amplifier module 300 is turned on or off, generating RF power for output under the action of high voltage and high current. The rectifier and filter module 600 is the final output of the RF drive circuit; it rectifies and filters the RF power to remove interference signals.

[0073] In practical implementation, the input terminal of the signal input detection and protection module 400 can be connected to the output terminals of the signal input module 100 and the isolation drive module 500 to receive the output signal of the isolation drive module 500, thereby forming a feedback circuit. By detecting the amplified RF drive signal, an enable signal is generated to determine whether the amplified RF drive signal output by the first-stage full-bridge drive amplifier module 200 is normal. When the output is normal, the first-stage full-bridge drive amplifier module 200 continues to be enabled based on the amplified RF drive signal; when the output is abnormal, the first-stage full-bridge drive amplifier module 200 is promptly shut down to prevent damage to the first-stage full-bridge drive amplifier module 200 and its downstream components, thereby protecting the drive circuit.

[0074] Specifically, initially, when the initial enable signal is valid, the first-stage full-bridge driver amplifier module 200 can be enabled to begin RF power processing. Then, the amplified RF drive signal is detected, and a working enable signal is generated. Based on this signal, the first-stage full-bridge driver amplifier module 200 remains enabled. When the amplified RF drive signal is abnormal, the first-stage full-bridge driver amplifier module 200 is shut down to protect the output of the main full-bridge amplifier module 300. Specifically, the signal feedback input terminal of the signal input module 100 can be connected to the isolation driver module 500 to collect the amplified RF drive signal. In response to an abnormal amplified RF drive signal, the first-stage full-bridge driver amplifier module 200 is shut down to protect the main output.

[0075] Further, referring to Figure 3, the signal input module 100 may include a first RF input interface IN1 and a second RF input interface IN2. The RF drive signal between the first RF input interface IN1 and the second RF input interface IN2 has a preset phase difference. This phase difference can be set according to actual process requirements. That is, the signal input module 100 can output two RF drive signals with a preset phase difference through the first RF input interface IN1 and the second RF input interface IN2.

[0076] Both the first RF input interface IN1 and the second RF input interface IN2 are connected to the input terminals of the first-stage full-bridge driver amplifier module 200. The first RF input interface IN1 and the second RF input interface IN2 drive a first full-bridge amplifier circuit 220 through two first inverters 210. The first full-bridge amplifier circuit 220 forms a full-bridge circuit through two half-bridge amplification sections, ensuring that the upper and lower bridge arms will never conduct simultaneously.

[0077] Specifically, the input terminal of the first inverter 210 is connected to the signal input module 100 to receive the corresponding RF drive signal, and the output terminal of the first inverter 210 is connected to the first full-bridge amplifier circuit 220. The first full-bridge amplifier circuit 220 amplifies the RF drive signal when enabled, generating an amplified RF drive signal. By inverting the input signal through the first inverter 210, the first full-bridge amplifier circuit 220 is enabled when it receives the inverted signal, amplifying the RF drive signal and generating an amplified RF drive signal. At the same time, the first-stage full-bridge drive amplifier module 200 has a strong driving capability, which can quickly drive the main bridge arm to start turning on and off, meeting the requirements of the RF power supply.

[0078] Furthermore, each first full-bridge amplifier circuit 220 includes: two half-bridge drive circuits 221 and a second inverter 222; one of the two half-bridge drive circuits 221 is connected to the output terminal of the first inverter 210, and the other half-bridge drive circuit 221 is connected to the output terminal of the first inverter 210 through the second inverter 222.

[0079] Referring to Figure 4, the half-bridge drive circuit 221 includes a half-bridge circuit 2211 and a logic control circuit 2212;

[0080] Among them, the logic control circuit 2212 in one of the two half-bridge drive circuits 221 is connected to the output terminal of the first inverter 210, the output terminal of the signal input detection and protection module 400, and the half-bridge circuit 2211; the logic control circuit 2212 in the other half-bridge drive circuit 221 is connected to the output terminal of the second inverter 222, the output terminal of the signal input detection and protection module 400, and the half-bridge circuit 2211; the logic control circuit 2212 is used to turn on the half-bridge circuit 2211 according to the working enable signal and the radio frequency drive signal.

[0081] The half-bridge circuit 2211 is connected to the main full-bridge amplifier module 300 and the first working power supply VCC1. When enabled, it is used to turn on the first working power supply VCC1 and generate an amplified radio frequency drive signal.

[0082] Specifically, the half-bridge circuit 2211 includes:

[0083] The drain of the first effect transistor Q3 is connected to the first operating power supply VCC1, the gate of the first effect transistor Q3 is connected to the output terminal of the logic control circuit 2212, and the source of the first effect transistor Q3 is connected to the main circuit full-bridge amplifier module 300.

[0084] The drain of the second effect transistor Q4 is connected to the source of the first effect transistor Q3 and the main full-bridge amplifier module 300. The gate of the second effect transistor Q4 is connected to the output terminal of the logic control circuit 2212. The source of the first effect transistor Q3 is grounded.

[0085] The first field-effect transistor Q3 and the second field-effect transistor Q4 form a bridge circuit; the output terminal of the signal input detection and protection module 400 is connected to the gate of the first field-effect transistor Q3 and the gate of the second field-effect transistor Q4; the half-bridge circuit 2211 is used to generate an amplified radio frequency drive signal when both the first and second field-effect transistors Q3 and Q4 are turned on.

[0086] The half-bridge circuit 2211 is controlled by two logic control circuits 2212 with EN1 (enable) control. The logic control circuit 2212 includes: a third inverter U3, a first AND gate U1, a fourth inverter U4, and a second AND gate U2;

[0087] In one of the two logic control circuits 2212, the input terminal of the third inverter U3 of the logic control circuit 2212 is connected to the output terminal of the second inverter 222, and the input terminal of the third inverter U3 of the other logic control circuit 2212 is connected to the output terminal of the first inverter 210.

[0088] The first AND gate U1 has its first input connected to the output of the third inverter U3, its second input connected to the output of the signal input detection and protection module 400, and its output connected to the gate of the first effect transistor Q3. It is used to receive the working enable signal and perform an AND operation between the working enable signal and the radio frequency drive signal to control the conduction state of the first effect transistor Q3.

[0089] The fourth inverter U4 is connected to the output of the third inverter U3.

[0090] The second AND gate logic U2 has its first input connected to the output of the fourth inverter U4, its second input connected to the output of the signal input detection and protection module 400, and its output connected to the gate of the second effect transistor Q4. It is used to receive the working enable signal and perform an AND operation between the working enable signal and the radio frequency drive signal to control the conduction state of the second effect transistor Q4.

[0091] A bridge circuit is formed by a first field-effect transistor (FET) Q3 and a second FET Q4. The output terminals of the signal input detection and protection module 400 are connected to the gates of the first FET Q3 and the second FET Q4, respectively. The EN1 port receives the enable signal, while the RF drive signal is output to the first AND gate U1 via the third inverter U3, and then to the second AND gate U2 via the fourth inverter U4. Based on AND logic, when both terminals of the first AND gate U1 are high, the first AND gate U1 outputs a high level. Correspondingly, since the second AND gate U2 receives the inverted RF signal and the enable signal, it outputs a low level. The first FET Q3 and the second FET Q4 are then turned on and off accordingly, thus outputting the corresponding phase of the RF drive signal. Because FETs have a wide voltage tolerance range and a large input current, they possess good high-frequency characteristics and fast turn-on and turn-off speeds. FETs enable rapid response in high-frequency, high-voltage scenarios.

[0092] Furthermore, to filter out interference signals, an inductor-capacitor filter circuit can be incorporated into the half-bridge circuit 2211 for filtering. The filtering frequency can be adjusted by changing the inductor or capacitor value in the filter circuit. To ensure the voltage range of the logic control circuit 2212, a first voltage divider resistor R1 can be placed between the logic control circuit 2212 and the half-bridge circuit 2211 for voltage division.

[0093] Furthermore, the isolation drive module 500 includes: an isolation transformer and an enable sampling circuit.

[0094] The primary side of the isolation transformer is connected to the first-stage full-bridge drive amplifier module 200, the secondary side of the isolation transformer is connected to the input terminal of the enable sampling circuit and the input terminal of the main full-bridge amplifier module 300, and the output terminal of the enable sampling circuit is connected to the signal input detection and protection module 400.

[0095] An isolation transformer isolates the amplified RF drive signal of the first-stage full-bridge driver amplifier module 200 from the RF power of the main full-bridge amplifier module 300, preventing interference between signals. The enable sampling circuit performs detection on the secondary side of the isolation transformer to determine whether the output is normal.

[0096] As shown in Figure 5, an isolation transformer is connected to the output of the first-stage full-bridge drive amplifier module 200. That is, the primary side of the isolation transformer is connected to the output of the first-stage full-bridge drive amplifier module 200. The output of the isolation transformer consists of two opposite windings, which are respectively connected to the upper and lower bridge arm field-effect transistors of the main full-bridge amplifier module 300. This prevents the upper and lower bridges of the main full-bridge amplifier module 300 from conducting simultaneously, and at the same time, the output voltage of the isolation transformer will not burn out the field-effect transistors of the full-bridge arm.

[0097] Furthermore, the enabling sampling circuit includes:

[0098] The second voltage divider resistor is in contact with both ends of the secondary side of the isolation transformer;

[0099] The first diode has its cathode connected to one end of the second voltage divider resistor, and its anode connected to the feedback interface. The feedback interface is connected to the signal input detection and protection module 400 and is used to detect and amplify the RF drive signal.

[0100] As shown in Figure 5, the second voltage divider resistor R2 is connected to both ends of the secondary side of the isolation transformer, thereby dividing the voltage of the amplified RF drive signal to ensure that the sampled voltage range meets the requirements. Then, a first diode D3 is placed at one end of the second voltage divider resistor R2, with the cathode of the second voltage divider resistor R2 connected to the cathode of the first diode D3. The anode of the first diode D3 is connected to the feedback interface Readback, which is connected to the signal input detection and protection module 400. This allows the amplified RF drive signal to be transmitted to the signal input detection and protection module 400 via the feedback interface Readback, where the module identifies the signal and generates an enable signal.

[0101] Furthermore, a filtering circuit can be set at the feedback interface. Referring to Figure 5, a capacitor C3 is connected to the feedback interface for filtering. A second diode D4 is also provided to protect the Readback signal at the feedback interface.

[0102] Furthermore, referring to Figure 5, the isolation drive module 500 may also include a third diode D5 and a fourth diode D6.

[0103] Furthermore, the main bridge amplifier module 300 includes: a full-bridge rectifier circuit composed of four field-effect transistors, the input terminal of which is connected to the output terminal of the isolation drive module 500;

[0104] The primary side of the amplification transformer is connected to the first-stage full-bridge drive amplifier module 200, and the secondary side of the amplification transformer is connected to the full-bridge rectifier circuit. It is used to divide the amplified RF drive signal into different field-effect transistors of the full-bridge rectifier circuit.

[0105] The main circuit full-bridge amplifier module 300 is a full-bridge rectifier circuit composed of four field-effect transistors and an amplifier transformer. The four field-effect transistors are connected to the secondary side of the amplifier transformer to rectify and output the input current transmitted from the secondary side of the amplifier transformer.

[0106] In an optional embodiment of this application, the signal input module 100 has an enable input interface EN0, which is used to output an initial enable signal. The signal input detection and protection module 400 includes a third field-effect transistor Q4, a fourth field-effect transistor Q5, and an operational amplifier U4.

[0107] The drain of the third field-effect transistor Q4 is connected to the non-inverting input terminal of the operational amplifier U4 and the second operating power supply VCC2; the gate of the third field-effect transistor Q4 is connected to the enable input interface; the source of the third field-effect transistor Q4 is grounded.

[0108] The gate of the fourth field-effect transistor Q5 is connected to the enable input interface and the output terminal of the operational amplifier U4, the drain of the fourth field-effect transistor Q5 is connected to the enable output interface, and the source of the fourth field-effect transistor Q5 is grounded.

[0109] The enable output interface is used to output a working enable signal to the first-stage full-bridge drive amplifier module 200; the operational amplifier U4 is used to send a high-level signal or a low-level signal to the fourth field-effect transistor Q5 when it receives the amplified RF drive signal, based on the comparison between the amplified RF drive signal and the second working power supply VCC2; the fourth field-effect transistor Q5 is used to turn off when the signal output from the operational amplifier is at the same potential as the initial enable signal, and to turn on when the signal output from the operational amplifier is at the opposite potential to the initial enable signal; the third field-effect transistor Q4 is used to turn off when the initial enable signal is input.

[0110] In this embodiment, the signal input detection and protection module 400 mainly includes a third field-effect transistor Q4, a fourth field-effect transistor Q5, and an operational amplifier U4. The gate of the third field-effect transistor Q4 is connected to the enable input interface, the source of the third field-effect transistor Q4 is grounded, and the drain of the third field-effect transistor Q4 is connected to the non-inverting input terminal of the operational amplifier.

[0111] The gate of the fourth field-effect transistor Q5 is connected to the enable input interface and the output terminal of the operational amplifier. The source of the fourth field-effect transistor Q5 is grounded. The drain of the fourth field-effect transistor Q5 is connected to the first-stage full-bridge driver amplifier module 200. The inverting input terminal of the operational amplifier is connected to the isolation driver module 500.

[0112] When operational amplifier U4 receives the amplified RF drive signal, it compares the input level of the amplified RF drive signal with the level of the second operating power supply. When the input level of the amplified RF drive signal is greater than the level of the second operating power supply, it outputs either a high-level signal or a low-level signal. When the input level of the amplified RF drive signal is not greater than the level of the second operating power supply, it outputs either a high-level signal or a low-level signal. The specific output level can be determined according to the actual situation, and this embodiment does not specifically limit it. The output high-level signal or low-level signal is sent to the fourth field-effect transistor Q5. When the signal output by the fourth field-effect transistor Q5 is at the same potential as the initial enable signal (i.e., the initial enable signal and the signal output by the operational amplifier U4 are at the same potential), the fourth field-effect transistor Q5 can be turned off, thereby driving the first-stage full-bridge drive amplifier module 200. When the signal output by the operational amplifier U4 is opposite to the potential of the initial enable signal, the fourth field-effect transistor Q5 is turned on; the third field-effect transistor Q4 is used to turn off when the initial enable signal is input, thereby turning off the first-stage full-bridge drive amplifier module 200. "Same potential" means that the signal output from operational amplifier U4 and the initial enable signal are both high-level signals, or both are low-level signals. "Different potentials" means that one of the signals output from operational amplifier U4 and the initial enable signal is high-level, while the other is low-level.

[0113] Taking a second operating power supply VCC2 of 5V as an example, referring to Figure 6, when a normal RF drive signal is input, the isolation transformer outputs a high level, the current flowing through the Readback resistor R1 decreases, the voltage at the inverting input of operational amplifier U4 increases, the output of operational amplifier U4 outputs 0V, and EN1 outputs a high level, causing the drive EN1 to pull high; that is, receiving the working enable signal enables the first-stage full-bridge drive amplifier module 200. Conversely, when there is no RF drive signal input, the transformer outputs a low level, the current flowing through the Readback resistor R1 increases, the voltage at the inverting input of operational amplifier U4 decreases, causing the operational amplifier output to output 5V, EN1 to output a low level, and the first-stage full-bridge drive amplifier module 200 to turn off. By detecting the level change of the output of the isolation drive module 500, the operational amplifier U4 is used for pure hardware control. This circuit has a fast response speed and high stability; and it also provides protection for the subsequent power and main output.

[0114] In addition, the signal input detection and protection module 400 may also include a working indicator circuit, which includes an indicator light L1, a voltage divider resistor R11, and a diode D7. When the fourth field-effect transistor Q5 is turned on, it can drive the full-bridge amplifier module 200. At the same time, the diode D7 is turned on, causing the indicator light L1 to turn on and emit light. The user can observe whether the RF power supply is working properly by observing the light.

[0115] The signal input detection and protection module 400 may also include a filtering circuit to filter the initial enable signal and prevent abnormal startup. The filtering circuit consists of a resistor R2 and a capacitor C3 connected in series. The filtering frequency is determined by the resistance value of resistor R2 and the capacitance value of capacitor C3, thus filtering out interference signals in the input initial enable signal.

[0116] The signal input detection and protection module 400 may further include a voltage regulator circuit, which includes a Zener diode D2 connected in series before the fourth field-effect transistor Q5 and a Zener diode D1 connected in series before the third field-effect transistor Q4. When the circuit containing the fourth field-effect transistor Q5 oscillates, the Zener diode D2 absorbs a certain voltage, thereby protecting the fourth field-effect transistor Q5. Similarly, when the circuit containing the fourth field-effect transistor Q4 oscillates, the Zener diode D1 absorbs a certain voltage, thereby protecting the fourth field-effect transistor Q4.

[0117] This application also discloses an RF power supply, which includes the RF power supply driving circuit, power amplifier, and RF power supply sensor as described above. The output terminal of the driving device is connected to the input terminal of the power amplifier; the output terminal of the power amplifier is connected to the input terminal of the RF power supply sensor; and the RF power supply sensor is used to detect RF power.

[0118] Referring to FIG7, an embodiment of this application also discloses a semiconductor process apparatus, which includes an RF power supply 720, an RF matching unit 730, and a process chamber 710. The RF power supply 720 is the aforementioned RF power supply, which is used to output a DC voltage to the electrodes of the process chamber 710. The RF matching unit 730 is used to load RF power to the process chamber 710 to excite the process gas in the process chamber 710 to form plasma. The process chamber 710 is used to process the wafer to be processed based on plasma.

[0119] The process chamber 710 includes a cathode (metal target) 711 and an anode (sputtered material) 712. The positive terminal of the RF power supply 720 is grounded through an RF matching connector 730 and connected to the anode (sputtered material) 712 of the process chamber 710, while the negative terminal of the RF power supply 720 is connected to the cathode (metal target) 711 of the process chamber 710. After the positive and negative terminals of the RF power supply 720 are connected to the process chamber 710, a high-voltage DC current is used to generate plasma. The generated plasma rushes towards the cathode (metal target) 711, sputtering metal atoms from the cathode (metal target) 711 onto the anode (sputtered material) 712, thus completing the thin film deposition on the anode (sputtered material).

[0120] When the process requires increased RF power, the power amplifier module in the RF power supply 720 can output multiple RF powers simultaneously. The RF power combining device in the RF power supply 720 combines the above multiple RF powers and outputs a combined RF power to the process chamber.

[0121] It should be noted that, for the sake of simplicity, the method embodiments are all described as a series of actions. However, those skilled in the art should understand that the embodiments of this application are not limited to the described order of actions, because according to the embodiments of this application, some steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also understand that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of this application.

[0122] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0123] Those skilled in the art will understand that embodiments of this application can be provided as methods, apparatus, or computer program products. Therefore, embodiments of this application can take the form of entirely hardware embodiments, entirely software embodiments, or embodiments combining software and hardware aspects. Furthermore, embodiments of this application can take the form of computer program products implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0124] This application describes embodiments with reference to flowchart illustrations and / or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of this application. It should be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, create means for implementing the functions specified in one or more blocks of the flowchart illustrations and / or one or more blocks of the block diagrams.

[0125] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing terminal device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means that implement the functions specified in one or more flowcharts and / or one or more block diagrams.

[0126] These computer program instructions may also be loaded onto a computer or other programmable data processing terminal equipment to cause a series of operational steps to be performed on the computer or other programmable terminal equipment to produce a computer-implemented process, such that the instructions, which execute on the computer or other programmable terminal equipment, provide steps for implementing the functions specified in one or more flowcharts and / or one or more block diagrams.

[0127] Although preferred embodiments of the present application have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the embodiments of the present application.

[0128] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes the element.

[0129] The above provides a detailed description of an RF power supply driving circuit, an RF power supply, and a semiconductor process equipment provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A radio frequency driving circuit, wherein, include: The signal input module is used to output radio frequency drive signals and initial enable signals; A first-stage full-bridge driver amplifier module is connected to the output terminal of the signal input module and is used to amplify the radio frequency drive signal when enabled to generate an amplified radio frequency drive signal. The main circuit full-bridge amplifier module is connected to the output terminal of the first-stage full-bridge driver amplifier module, and is used to amplify the amplified radio frequency drive signal to generate and output radio frequency power; The signal input detection and protection module has its input terminal connected to the output terminal of the signal input module and the input terminal of the main full-bridge amplifier module. The output terminal of the signal input detection and protection module is connected to the input terminal of the first-stage full-bridge drive amplifier module. It is used to generate a working enable signal based on the amplified radio frequency drive signal when the initial enable signal is obtained, thereby enabling the first-stage full-bridge drive amplifier module.

2. The radio frequency driving circuit according to claim 1, wherein, The signal input detection and protection module is also used to shut down the first-stage full-bridge drive amplifier module in response to an abnormality in the amplified radio frequency drive signal.

3. The radio frequency driving circuit according to claim 1 or 2, wherein, The signal input module is used to output two radio frequency drive signals with a phase difference. The radio frequency drive circuit includes two first-stage full-bridge drive amplifier modules, which are used to receive the radio frequency drive signals with different phases. The first-stage full-bridge drive amplifier module includes: a first full-bridge amplifier circuit and a first inverter; The input terminal of the first inverter is connected to the signal input module to receive the corresponding radio frequency drive signal, and the output terminal of the first inverter is connected to the first full-bridge amplifier circuit. The first full-bridge amplifier circuit is used to amplify the radio frequency drive signal when enabled to generate the amplified radio frequency drive signal.

4. The radio frequency driving circuit according to claim 3, wherein, The first full-bridge amplifier circuit includes two half-bridge driver circuits and a second inverter; one of the two half-bridge driver circuits is connected to the output terminal of the first inverter, and the other half-bridge driver circuit is connected to the output terminal of the first inverter through the second inverter. The half-bridge drive circuit includes a half-bridge circuit and a logic control circuit. The logic control circuit in one of the two half-bridge drive circuits is connected to the output terminal of the first inverter, the output terminal of the signal input detection and protection module, and the half-bridge circuit. The logic control circuit in the other half-bridge drive circuit of the two half-bridge drive circuits is connected to the output terminal of the second inverter, the output terminal of the signal input detection and protection module, and the half-bridge circuit; the logic control circuit is used to turn on the half-bridge circuit according to the working enable signal and the radio frequency drive signal. The half-bridge circuit is connected to the main full-bridge amplifier module and the first operating power supply, and is used to turn on the first operating power supply and generate the amplified radio frequency drive signal when enabled.

5. The radio frequency driving circuit according to claim 4, wherein, The half-bridge circuit includes: The first effect transistor has its drain connected to the first operating power supply, its gate connected to the output terminal of the logic control circuit, and its source connected to the main circuit full-bridge amplifier module. The drain of the second effect transistor is connected to the source of the first effect transistor and the main full-bridge amplifier module, the gate of the second effect transistor is connected to the output terminal of the logic control circuit, and the source of the first effect transistor is grounded. The half-bridge circuit is used to generate the amplified radio frequency drive signal when both the first effect transistor and the second effect transistor are turned on.

6. The radio frequency driving circuit according to claim 5, wherein, The logic control circuit includes: a third inverter, a first AND gate, a fourth inverter, and a second AND gate; wherein, In one of the two logic control circuits, the input terminal of the third inverter of the logic control circuit is connected to the output terminal of the second inverter, and the input terminal of the third inverter of the other logic control circuit is connected to the output terminal of the first inverter. The first AND gate logic device has its first input terminal connected to the output terminal of the third inverter, its second input terminal connected to the output terminal of the signal input detection and protection module, and its output terminal connected to the gate of the first effect transistor. The fourth inverter, the input terminal of which is connected to the output terminal of the third inverter; The second AND gate logic device has its first input terminal connected to the output terminal of the fourth inverter, its second input terminal connected to the output terminal of the signal input detection and protection module, and its output terminal connected to the gate of the second effect transistor.

7. The radio frequency driving circuit according to claim 6, wherein, The half-bridge drive circuit also includes: The first voltage divider resistor is connected in series between the logic control circuit and the half-bridge circuit.

8. The radio frequency driving circuit according to any one of claims 1-7, wherein, The radio frequency driving circuit also includes: An isolation driver module is located between the first-stage full-bridge driver amplifier module and the main full-bridge amplifier module, and is used to isolate the amplified RF drive signal and the RF power. The signal input detection and protection module is connected to the isolation drive module.

9. The radio frequency driving circuit according to claim 8, wherein, The isolation drive module includes an isolation transformer and an enable sampling circuit; The primary side of the isolation transformer is connected to the first-stage full-bridge drive amplifier module, the secondary side of the isolation transformer is connected to the input terminal of the enable sampling circuit and the input terminal of the main full-bridge amplifier module, and the output terminal of the enable sampling circuit is connected to the signal input detection and protection module.

10. The radio frequency driving circuit according to claim 9, wherein, The enabling sampling circuit includes: The second voltage divider resistor is in contact with both ends of the secondary side of the isolation transformer; The first diode has its cathode connected to one end of the second voltage divider resistor, and its anode connected to a feedback interface. The feedback interface is connected to the signal input detection and protection module and is used to detect the amplified radio frequency drive signal.

11. The radio frequency driving circuit according to claim 10, wherein, The signal input module has an enable input interface, which is used to output the initial enable signal. The signal input detection and protection module includes a third field-effect transistor, a fourth field-effect transistor, and an operational amplifier. The drain of the third field-effect transistor is connected to the non-inverting input terminal of the operational amplifier and the second operating power supply; the gate of the third field-effect transistor is connected to the enable input interface; and the source of the third field-effect transistor is grounded. The gate of the fourth field-effect transistor is connected to the enable input interface and the output terminal of the operational amplifier, the drain of the fourth field-effect transistor is connected to the enable output interface, and the source of the fourth field-effect transistor is grounded. The enable output interface is used to output the working enable signal to the first-stage full-bridge drive amplifier module; the operational amplifier is used to send a high-level signal or a low-level signal to the fourth field-effect transistor when it receives the amplified radio frequency drive signal, based on the comparison between the amplified radio frequency drive signal and the second working power supply; the fourth field-effect transistor is used to turn off when the signal output by the operational amplifier is at the same potential as the initial enable signal, and to turn on when the signal output by the operational amplifier is at the opposite potential to the initial enable signal; the third field-effect transistor is used to turn off when the initial enable signal is input.

12. The radio frequency driving circuit according to any one of claims 8-11, wherein, The main road full-bridge amplification module includes: A full-bridge rectifier circuit consisting of four field-effect transistors, wherein the input terminal of the full-bridge rectifier circuit is connected to the output terminal of the isolation drive module; An amplifying transformer is provided, the primary side of which is connected to the first-stage full-bridge drive amplification module, and the secondary side of which is connected to the full-bridge rectifier circuit. The amplified radio frequency drive signal is divided into different field-effect transistors in the full-bridge rectifier circuit.

13. The radio frequency driving circuit according to any one of claims 1-12, wherein, The radio frequency driving circuit also includes: The rectifier and filter module has its input terminal connected to the output terminal of the main full-bridge amplifier module and is used to perform rectification and filtering on the radio frequency power.

14. A radio frequency power supply, wherein, The radio frequency power supply includes a radio frequency driving circuit, a power amplifier, and a radio frequency power sensor as described in any one of claims 1-13, wherein the output terminal of the radio frequency driving circuit is connected to the input terminal of the power amplifier; the output terminal of the power amplifier is connected to the input terminal of the radio frequency power sensor; and the radio frequency power sensor is used to detect the radio frequency power.

15. A semiconductor process apparatus, wherein, The semiconductor process equipment includes a radio frequency (RF) power supply, an RF matching unit, and a process chamber. The RF power supply is the RF power supply as described in claim 14. The RF power supply is used to generate RF power. The RF matching unit is used to load the RF power into the process chamber to excite the process gas in the process chamber to form plasma. The process chamber is used to process the wafer to be processed based on the plasma.

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