Detection device

Abstract

A detection device according to the present invention has: a substrate; a plurality of photodiodes arranged in a matrix in a detection region of the substrate, each of the photodiodes having a lower electrode, an active layer, and an upper electrode stacked in that order; an organic insulating film provided between the substrate and the plurality of photodiodes; and a rib provided so as to surround the active layer in a peripheral region different from the detection region of the substrate, wherein the contact angle of the rib and a solution containing an organic material constituting the active layer is greater than the contact angle of the organic insulating film and the solution containing the organic material constituting the active layer.

Description

Detection device

[0001] The present invention relates to a detection device.

[0002] Optical sensors capable of detecting fingerprint patterns and vein patterns are known (see, for example, Patent Document 1). Such optical sensors include multiple photodiodes (OPDs: Organic Photodiodes) that use an organic semiconductor material as an active layer. The detection device described in Patent Document 1 (referred to as an organic photodiode device in Patent Document 1) includes at least one photodiode that includes a first organic layer between a first electrode and a second electrode, a bank that covers an edge of the first electrode, and a rib that surrounds the first organic layer.

[0003] Japanese Patent Application Laid-Open No. 2023-136697

[0004] In the detection device of Patent Document 1, since ribs are provided in the peripheral region, the area of ​​the peripheral region may become large.

[0005] An object of the present invention is to provide a detection device that can reduce the area of ​​the peripheral region.

[0006] A detection device according to one embodiment of the present disclosure includes a substrate, a plurality of photodiodes arranged in a matrix in a detection region of the substrate, each photodiode being stacked in the order of a lower electrode, an active layer, and an upper electrode, an organic insulating film provided between the substrate and the plurality of photodiodes, and a rib provided in a peripheral region of the substrate different from the detection region, surrounding the active layer, wherein the contact angle of the rib with a solution containing an organic material constituting the active layer is larger than the contact angle of the organic insulating film with a solution containing the organic material constituting the active layer.

[0007] FIG. 1 is a plan view schematically showing a detection device according to a first embodiment. FIG. 2 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. FIG. 3 is a circuit diagram showing the detection device according to the first embodiment. FIG. 4 is a plan view schematically showing the positional relationship between a plurality of photodiodes in a detection region and contact portions and mounting portions in a peripheral region. FIG. 5 is a cross-sectional view taken along line VV' in FIG. 4. FIG. 6 is a cross-sectional view taken along line VI-VI' in FIG. 4. FIG. 7 is a cross-sectional view showing a detection device according to a second embodiment. FIG. 8 is a cross-sectional view showing a detection device according to a third embodiment.

[0008] Modes (embodiments) for carrying out the present disclosure will be described in detail with reference to the drawings. The present disclosure is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be combined as appropriate. Note that the disclosure is merely an example, and any appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the present disclosure are naturally included within the scope of the present disclosure. Furthermore, for clarity of explanation, the drawings may schematically depict the width, thickness, shape, etc. of each part compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present disclosure. Furthermore, in this disclosure and each figure, elements similar to those described above with reference to the previous figures may be designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0009] In the present disclosure, when expressing an aspect of placing another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is placed directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is placed above a certain structure via yet another structure.

[0010] First Embodiment Fig. 1 is a plan view schematically showing a detection device according to a first embodiment. As shown in Fig. 1, the detection device 1 has a substrate 21, a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, and light sources 53 and 54. The first light source substrate 51 is provided with a plurality of light sources 53. The second light source substrate 52 is provided with a plurality of light sources 54.

[0011] A control board 121 is electrically connected to the substrate 21 via a wiring board 71. The wiring board 71 is, for example, a flexible printed circuit board or a rigid board. The wiring board 71 is provided with a detection circuit 48. The control board 121 is provided with a control circuit 122 and a power supply circuit 123. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. The control circuit 122 also supplies control signals to the light sources 53 and 54 to control the lighting or non-lighting of the light sources 53 and 54. The power supply circuit 123 supplies voltage signals, such as a sensor power supply signal VDDSNS (see FIG. 3), to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. Furthermore, the power supply circuit 123 supplies a power supply voltage to the light sources 53 and 54 .

[0012] The substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area where multiple photodiodes PD (see FIG. 4) of the sensor unit 10 are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the outer edge of the substrate 21, where multiple photodiodes PD are not provided.

[0013] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA. Specifically, the gate line driving circuit 15 is provided in a region of the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in a region of the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0014] In the following description, the first direction Dx is a direction in a plane parallel to the substrate 21. The second direction Dy is a direction in a plane parallel to the substrate 21, and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect the first direction Dx without being perpendicular thereto. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is the normal direction to the main surface of the substrate 21. Furthermore, "planar view" refers to the positional relationship when viewed from a direction perpendicular to the substrate 21 (third direction Dz).

[0015] The plurality of light sources 53 are provided on the first light source substrate 51 and arranged along the second direction Dy. The plurality of light sources 54 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0016] For example, inorganic light emitting diodes (LEDs) or organic light emitting diodes (OLEDs) are used as the light sources 53 and 54. The light sources 53 and 54 emit light of different wavelengths.

[0017] The first light emitted from the light source 53 is mainly reflected by the surface of the object to be detected, such as a finger, and enters the sensor unit 10. As a result, the sensor unit 10 can detect a fingerprint by detecting the shape of the projections and recesses on the surface of the finger or the like. The second light emitted from the light source 54 is mainly reflected by the inside of the finger or the like or passes through the finger or the like and enters the sensor unit 10. As a result, the sensor unit 10 can detect information about the living body inside the finger or the like. The information about the living body includes, for example, the pulse wave, pulse rate, and blood vessel image of the finger or palm. In other words, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints, or a vein detection device that detects blood vessel patterns such as veins.

[0018] The arrangement of the light sources 53, 54 shown in FIG. 1 is merely an example and can be changed as appropriate. The detection device 1 is provided with multiple types of light sources 53, 54 as light sources. However, this is not limited to this, and the light source may be of one type. For example, multiple light sources 53 and multiple light sources 54 may be arranged on the first light source substrate 51 and the second light source substrate 52, respectively. Furthermore, the number of light source substrates on which the light sources 53 and the light sources 54 are arranged may be one or three or more. Alternatively, it is sufficient that at least one or more light sources are arranged.

[0019] 2 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. As shown in FIG. 2, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. Some or all of the functions of the detection control circuit 11 are included in a control circuit 122. In addition, some or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 122.

[0020] The sensor unit 10 has a plurality of photodiodes PD. The photodiodes PD of the sensor unit 10 output electrical signals corresponding to the incident light as detection signals Vdet to the signal line selection circuit 16. The sensor unit 10 also performs detection in accordance with a gate drive signal VGL supplied from the gate line drive circuit 15.

[0021] The detection control circuit 11 is a circuit that supplies control signals to the gate line drive circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control circuit 11 supplies various control signals, such as a start signal STV and a clock signal CK, to the gate line drive circuit 15. The detection control circuit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control circuit 11 also supplies various control signals to the light sources 53 and 54, and controls the lighting and non-lighting of each.

[0022] The gate line driving circuit 15 is a circuit that drives a plurality of gate lines GL (see FIG. 3) based on various control signals. The gate line driving circuit 15 sequentially or simultaneously selects the plurality of gate lines GL and supplies a gate driving signal VGL to the selected gate lines GL. In this way, the gate line driving circuit 15 selects a plurality of photodiodes PD connected to the gate lines GL.

[0023] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SL (see FIG. 3 ). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SL to the detection circuit 48 based on a selection signal ASW supplied from the detection control circuit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the photodiode PD to the detection unit 40.

[0024] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a memory circuit 46, and a detection timing control circuit 47. The detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 based on a control signal supplied from the detection control circuit 11 so that they operate in synchronization with each other.

[0025] The detection circuit 48 is, for example, an analog front end (AFE) circuit. The detection circuit 48 is a signal processing circuit that has at least the functions of a detection signal amplifier circuit 42 and an A / D conversion circuit 43. The detection signal amplifier circuit 42 amplifies the detection signal Vdet. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0026] The signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When a finger touches or approaches the detection surface, the signal processing circuit 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 48. The signal processing circuit 44 can also detect information about the living body based on the signal from the detection circuit 48. The information about the living body includes, for example, an image of the blood vessels of the finger or palm, a pulse wave, a pulse rate, and a blood oxygen concentration.

[0027] The memory circuit 46 temporarily stores the signals calculated by the signal processing circuit 44. The memory circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0028] The coordinate extraction circuit 45 is a logic circuit that calculates the detected coordinates of the unevenness of the surface of a finger or the like when the signal processing circuit 44 detects contact or proximity of a finger. The coordinate extraction circuit 45 is also a logic circuit that calculates the detected coordinates of the blood vessels of the finger or palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from each photodiode PD of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger or the like and two-dimensional information indicating the shape of the blood vessels of the finger or palm. The coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output voltage Vo without calculating the detection coordinates.

[0029] 3 is a circuit diagram showing the detection device according to the first embodiment. The circuit configuration of a detection circuit 48 is also shown in FIG. 3. As shown in FIG. 3, a sensor pixel PX includes a photodiode PD, a capacitance element Ca, and a drive transistor Tr. The capacitance element Ca is a capacitance (sensor capacitance) formed in the photodiode PD, and is equivalently connected in parallel with the photodiode PD.

[0030] 3 shows two gate lines GL(m) and GL(m+1) arranged in the second direction Dy among the multiple gate lines GL. Also, two signal lines SL(n) and SL(n+1) arranged in the first direction Dx among the multiple signal lines SL. A sensor pixel PX is an area surrounded by the gate line GL and the signal line SL.

[0031] The drive transistors Tr are provided corresponding to the respective photodiodes PD. The drive transistors Tr are configured by thin film transistors, and in this example, are configured by n-channel MOS (Metal Oxide Semiconductor) type TFTs (Thin Film Transistors).

[0032] Each of the gate lines GL is connected to the gates of a plurality of drive transistors Tr arranged in a first direction Dx. Each of the signal lines SL is connected to one of the source and drain of a plurality of drive transistors Tr arranged in a second direction Dy. The other of the source and drain of each of the drive transistors Tr is connected to the cathode of the photodiode PD and the capacitance element Ca.

[0033] A sensor power supply signal VDDSNS is supplied to the anode of the photodiode PD from the power supply circuit 123 (see FIG. 1 ). A sensor reference voltage COM, which serves as the initial potential of the signal line SL and the capacitance element Ca, is supplied to the signal line SL and the capacitance element Ca from the power supply circuit 123 via the reset transistor TrR.

[0034] When light is irradiated onto the sensor pixel PX during the exposure period, a current corresponding to the amount of light flows through the photodiode PD, causing charge to accumulate in the capacitance element Ca. When the drive transistor Tr is turned on during the readout period, a current corresponding to the charge accumulated in the capacitance element Ca flows through the signal line SL. The signal line SL is connected to the detection circuit 48 via the output transistor TrS of the signal line selection circuit 16. This allows the detection device 1 to detect a signal corresponding to the amount of light irradiated onto the photodiode PD for each sensor pixel PX.

[0035] During the readout period, the switch SSW of the detection circuit 48 is turned on and connected to the signal line SL. The detection signal amplifier circuit 42 of the detection circuit 48 converts the current or charge supplied from the signal line SL into a voltage corresponding to the current or charge. A reference potential (Vref) having a fixed potential is input to the non-inverting input terminal (+) of the detection signal amplifier circuit 42, and the signal line SL is connected to the inverting input terminal (-). In this embodiment, a signal equal to the sensor reference voltage COM is input as the reference potential (Vref) voltage. The control circuit 122 (see FIG. 1) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when light is not irradiated as the sensor output voltage Vo. The detection signal amplifier circuit 42 also includes a capacitance element Cb and a reset switch RSW. During the reset period, the reset switch RSW is turned on, resetting the charge in the capacitance element Cb.

[0036] The driving transistor Tr is not limited to an n-type TFT, but may be a p-type TFT. The pixel circuit of the sensor pixel PX shown in Fig. 3 is merely an example, and the sensor pixel PX may be provided with multiple transistors corresponding to one photodiode PD.

[0037] Next, the detailed configuration of the photodiode PD will be described with reference to Figures 4 to 6. Figure 4 is a plan view schematically showing the arrangement of a plurality of photodiodes in the detection region and the contact portions and mounting portions in the peripheral region.

[0038] 4, a plurality of photodiodes PD are arranged in a matrix in the detection area AA. The photodiodes PD of this embodiment are organic photodiodes (OPDs) that use an organic semiconductor as the active layer 33 (see FIG. 5).

[0039] The lower electrodes 31 of the photodiodes PD are provided separately for each of the photodiodes PD and are arranged in a matrix in the detection area AA. The upper electrodes 35 of the photodiodes PD are provided continuously across the photodiodes PD and are provided throughout the detection area AA. A portion of the upper electrode 35 extends into the peripheral area GA, is connected to the contact portion CN, and is electrically connected to an external circuit (e.g., the control circuit 122 or the power supply circuit 123 (see FIG. 1 )) through wiring on the substrate 21.

[0040] The detection device 1 has a sealing film 90 that covers the multiple photodiodes PD. The sealing film 90 is provided across the detection area AA and the peripheral area GA, and is provided up to the outer edge of the substrate 21. The sealing film 90 extends further to the outer edge of the substrate 21 than multiple insulating films (e.g., the organic insulating film 26, the barrier film 27, the rib 95, etc.) provided on the substrate 21. The sealing film 90 can prevent moisture from entering from the outer edge of the substrate 21 to the detection area AA. Note that detailed configurations of the photodiodes PD, the insulating films, the rib 95, and the sealing film 90 will be described later with reference to FIGS. 5 and 6 .

[0041] The mounting portion T is provided on the substrate 21 outside the outer periphery of the sealing film 90. The mounting portion T includes, for example, a connection terminal for connecting to the wiring substrate 71 (see FIG. 1 ). Alternatively, the mounting portion T may include a mounting terminal for mounting an IC (Integrated Circuit) that constitutes the detection circuit 48 or the like.

[0042] Next, a description will be given of the laminated structure of the plurality of photodiodes PD and the sealing film 90 of the detection device 1. Fig. 5 is a cross-sectional view taken along line VV' in Fig. 4 .

[0043] In the following description, the direction perpendicular to the surface of the substrate 21, from the substrate 21 toward the sealing film 90, will be referred to as the "upper side" or simply "upper." The direction from the sealing film 90 toward the substrate 21 will be referred to as the "lower side" or simply "lower."

[0044] 5, the detection device 1 has a substrate 21, a drive transistor Tr, a plurality of inorganic insulating films (an undercoat film 22, a gate insulating film 23, an interlayer insulating film 24, and a superimposed insulating film 25), an organic insulating film 26, a barrier film 27, a photodiode PD, and a sealing film 90. In the detection area AA, the plurality of inorganic insulating films (the undercoat film 22, the gate insulating film 23, the interlayer insulating film 24, and the superimposed insulating film 25), the organic insulating film 26, the barrier film 27, the photodiode PD, and the sealing film 90 are stacked in this order on the substrate 21.

[0045] The substrate 21 is an insulating substrate made of a film-like resin. The driving transistor Tr is provided in a region overlapping with the lower electrode 31 of the photodiode PD. Specifically, the driving transistor Tr has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64.

[0046] The light-shielding film 65 is provided on the substrate 21. The light-shielding film 65 is provided between the semiconductor layer 61 and the substrate 21. The light-shielding film 65 prevents light from entering the channel region of the semiconductor layer 61 from the substrate 21 side.

[0047] The undercoat film 22 is provided on the substrate 21, covering the light-shielding film 65. The undercoat film 22 is formed of an inorganic insulating film such as a silicon nitride film or a silicon oxide film. The configuration of the undercoat film 22 is not limited to a single layer, and may be a laminated film having, for example, two or three or more layers.

[0048] The drive transistor Tr is provided on a substrate 21. The semiconductor layer 61 is provided on an undercoat film 22. The gate insulating film 23 is provided on the undercoat film 22, covering the semiconductor layer 61. The gate insulating film 23 is an inorganic insulating film such as a silicon oxide film. The gate electrode 64 is provided on the gate insulating film 23.

[0049] 5, the driving transistor Tr has a top gate structure. However, the present invention is not limited to this, and the driving transistor Tr may have a bottom gate structure or a dual gate structure in which gate electrodes 64 are provided on both the upper and lower sides of the semiconductor layer 61.

[0050] The interlayer insulating film 24 is provided on the gate insulating film 23, covering the gate electrode 64. The interlayer insulating film 24 has, for example, a stacked structure of a silicon nitride film and a silicon oxide film. The source electrode 62 and the drain electrode 63 are provided on the interlayer insulating film 24. The source electrode 62 is connected to the source region of the semiconductor layer 61 via a contact hole CH2 provided through the gate insulating film 23 and the interlayer insulating film 24. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 via a contact hole CH3 provided through the gate insulating film 23 and the interlayer insulating film 24. The superposed insulating film 25 is provided on the interlayer insulating film 24, covering the source electrode 62 and the drain electrode 63.

[0051] A connection wiring 64a is provided in the same layer as the gate electrode 64. The connection wiring 64a is electrically connected to the gate electrode 64. A connection wiring 65a is provided in the same layer as the light-shielding film 65. The connection wiring 65a is electrically connected to the light-shielding film 65. The connection wiring 64a and the connection wiring 65a are connected via a contact hole CH4 that penetrates the undercoat film 22 and the gate insulating film 23. As a result, the light-shielding film 65 is electrically connected to the gate electrode 64 via the connection wirings 64a, 65a, and is supplied with the same potential as the gate electrode 64.

[0052] The organic insulating film 26 is provided on the superposed insulating film 25, covering the source electrode 62 and the drain electrode 63 of the drive transistor Tr. The organic insulating film 26 is a planarizing film made of an organic insulating material. In this embodiment, a contact hole CH1 in the organic insulating film 26 is provided in a region overlapping with the source electrode 62. The lower electrode 31 of the photodiode PD is electrically connected to the source electrode 62 at the bottom of the contact hole CH1.

[0053] The detection device 1 may be configured such that the superimposed insulating film 25 of the inorganic insulating films (the undercoat film 22, the gate insulating film 23, the interlayer insulating film 24, and the superimposed insulating film 25) is not provided. In this case, the organic insulating film 26 is provided on the interlayer insulating film 24, covering the source electrode 62 and the drain electrode 63.

[0054] The barrier film 27 is provided on the organic insulating film 26. The barrier film 27 is made of an inorganic insulating material such as silicon nitride (SiN).

[0055] The photodiode PD is provided on the barrier film 27. The photodiode PD has a lower electrode 31, a lower buffer layer 32, an active layer 33, an upper buffer layer 34, and an upper electrode 35. In the photodiode PD, the lower electrode 31, the lower buffer layer 32, the active layer 33, the upper buffer layer 34, and the upper electrode 35 are stacked in this order in a direction perpendicular to the substrate 21.

[0056] The lower electrode 31 is formed of a light-transmitting conductive material such as ITO (Indium Tin Oxide). As described above, a lower electrode 31 is provided for each photodiode PD. The lower electrodes 31 of adjacent photodiodes PD are disposed spaced apart from each other.

[0057] The insulating film 38 is provided to cover the periphery of the lower electrode 31. The insulating film 38 insulates the lower electrodes 31 of adjacent photodiodes PD. Furthermore, since the insulating film 38 is provided, it is possible to suppress leakage current between adjacent photodiodes PD. Furthermore, the insulating film 38 is provided to cover the contact hole CH1, and covers the lower electrode 31 in the region overlapping with the contact hole CH1. Even if a step occurs in the lower buffer layer 32 in the region overlapping with the contact hole CH1, the insulating film 38 can suppress the occurrence of a short circuit between the active layer 33 and the lower electrode 31. In this embodiment, the insulating film 38 is a silicon nitride film (SiN) or a silicon oxide film (SiO ２ ) or other inorganic insulating materials.

[0058] The lower buffer layer 32, the active layer 33, the upper buffer layer 34, and the upper electrode 35 are provided continuously across the multiple photodiodes PD. Specifically, the lower buffer layer 32, the active layer 33, the upper buffer layer 34, and the upper electrode 35 are provided so as to overlap the lower electrodes 31, and also so as to overlap the barrier film 27 located between adjacent lower electrodes 31.

[0059] The characteristics (for example, voltage-current characteristics and resistance value) of the active layer 33 change depending on the light irradiated thereto. An organic material is used as the material of the active layer 33. Specifically, the active layer 33 has a bulk heterostructure in which a p-type organic semiconductor and an n-type organic semiconductor, an n-type fullerene derivative (PCBM), are mixed. For example, a low-molecular organic material, C ６０ (fullerene), PCBM (phenyl C ６１ Butyric acid methyl ester: Phenyl C 61-butyric acid methyl ester), CuPc (Copper Phthalocyanine), F １６ CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), PDI (a derivative of perylene), or the like can be used.

[0060] The active layer 33 can be formed by a vapor deposition (dry process) using these low molecular weight organic materials. In this case, the active layer 33 is formed by, for example, CuPc and F １６ CuPc laminated film or rubrene and C ６０ The active layer 33 may be a laminated film of the above-mentioned low molecular weight organic material and high molecular weight organic material. The active layer 33 may also be formed by a wet process. In this case, the active layer 33 is made of a material that combines the above-mentioned low molecular weight organic material and high molecular weight organic material. Examples of high molecular weight organic materials that can be used include P3HT (poly(3-hexylthiophene)) and F8BT (F8-alt-benzothiadiazole). The active layer 33 may be a film in which P3HT and PCBM are mixed, or a film in which F8BT and PDI are mixed. The active layer 33 is not limited to a bulk heterostructure and may be a PIN type.

[0061] The lower buffer layer 32 and the upper buffer layer 34 are provided to allow holes and electrons generated in the active layer 33 to easily reach the lower electrode 31 or the upper electrode 35. The lower buffer layer 32 is provided between the lower electrode 31 and the active layer 33, and is in direct contact with the lower electrode 31 and the active layer 33. The upper buffer layer 34 is provided between the active layer 33 and the upper electrode 35, and is in direct contact with the active layer 33 and the upper electrode 35.

[0062] In this embodiment, the lower electrode 31 is the cathode electrode of the photodiode PD, and the upper electrode 35 is the anode electrode of the photodiode PD. In this case, the lower buffer layer 32 is an electron transport layer, and the upper buffer layer 34 is a hole transport layer. The material of the electron transport layer is ethoxylated polyethyleneimine (PEIE). The material of the hole transport layer is a metal oxide layer. As the metal oxide layer, tungsten oxide (WO ３ ), molybdenum oxide, etc. are used.

[0063] The lower electrode 31 may be the anode electrode of the photodiode PD, and the upper electrode 35 may be the cathode electrode of the photodiode PD. In this case, the lower buffer layer 32 may be a hole transport layer, and the upper buffer layer 34 may be an electron transport layer.

[0064] The upper electrode 35 is provided on the upper buffer layer 34. The upper electrode 35 is formed of a light-transmitting conductive material such as ITO or IZO (Indium Zinc Oxide). However, the upper electrode 35 is not limited thereto, and may be formed of a light-non-transmitting conductive material such as silver (Ag).

[0065] The sealing film 90 is provided on the upper electrode 35. The sealing film 90 is made of an inorganic insulating material such as silicon nitride (SiN). The sealing film 90 seals the photodiode PD well and can prevent moisture from entering from the upper surface side. The sealing film 90 is not limited to a single-layer film and may be a multi-layer film. The sealing film 90 may also be a multi-layer film, with multiple inorganic sealing films made of an inorganic insulating material and multiple organic sealing films made of an organic insulating material stacked one on top of the other.

[0066] Next, the configuration of the rib 95, the insulating films, and the sealing film 90 in the peripheral area GA will be described. Figure 6 is a cross-sectional view taken along line VI-VI' in Figure 4. Note that in Figure 6, the lower buffer layer 32 and the upper buffer layer 34 are omitted for clarity.

[0067] 6 , the undercoat film 22, gate insulating film 23, interlayer insulating film 24, superimposed insulating film 25, and sealing film 90 are provided across the detection area AA and peripheral area GA. The organic insulating film 26 and barrier film 27 are not provided in the peripheral area GA. That is, in the peripheral area GA, the organic insulating film 26 and barrier film 27 are removed, and an insulating film 38 is provided directly on and in contact with the superimposed insulating film 25.

[0068] The rib 95 is provided in the peripheral area GA so as to overlap the outer edge of the organic insulating film 26. The rib 95 protrudes above the upper surface 26a of the organic insulating film 26 in a direction perpendicular to the substrate 21 and is provided to surround the active layer 33. In a direction perpendicular to the substrate 21, the upper surface 95b of the rib 95 is located higher than the height position of the upper surface of the active layer 33. Furthermore, as shown in FIG. 4 , the rib 95 is provided in a frame shape in plan view so as to surround the multiple photodiodes PD in the detection area AA.

[0069] 6 , the rib 95 includes an upper surface 95b, a first side surface 95s1 on the detection area AA side, and a second side surface 95s2 on the peripheral area GA side. The rib 95 is provided across the side surface 26s of the organic insulating film 26. The first side surface 95s1 of the rib 95 overlaps with an area on the outer edge side of the upper surface 26a of the organic insulating film 26, and the second side surface 95s2 overlaps with the side surface 26s of the organic insulating film 26 closer to the peripheral area GA.

[0070] The rib 95 has a high contact angle region 95a at least on its upper surface 95b. Here, in the manufacturing process of the photodiode PD, the active layer 33 is formed by applying a solution containing the above-mentioned organic material. The contact angle of the high contact angle region 95a with the solution containing the organic material that forms the active layer 33 is larger than the contact angle of the organic insulating film 26 with the solution containing the organic material that forms the active layer 33. In other words, the high contact angle region 95a of the rib 95 is liquid-repellent and liquid-phobic.

[0071] The rib 95 is formed of, for example, a resin material containing fluorine, which is liquid-repellent and liquid-phobic. Alternatively, the high contact angle region 95a of the rib 95 may be provided with liquid-repellent and liquid-phobic properties by surface treatment such as plasma treatment. Note that the high contact angle region 95a is not limited to the upper surface 95b of the rib 95, and may also be provided on the first side surface 95s1 and the second side surface 95s2.

[0072] 6 , the contact portion CN is provided closer to the outer edge of the substrate 21 than the rib 95. The contact portion CN has a connection terminal 81 and power supply voltage supply wirings 82 and 83. The power supply voltage supply wirings 82 and 83 are connected to, for example, the power supply circuit 123 (see FIG. 1 ) and supply a sensor power supply signal VDDSNS to the multiple photodiodes PD. The power supply voltage supply wiring 82 is provided on the interlayer insulating film 24, and the power supply voltage supply wiring 83 is provided on the gate insulating film 23.

[0073] The connection terminal 81 is provided on the superimposed insulating film 25 in the peripheral area GA. The connection terminal 81 is connected to the power supply voltage supply wiring 82 through an opening provided in the superimposed insulating film 25 in a region where the connection terminal 81 overlaps with the power supply voltage supply wiring 82.

[0074] The upper electrode 35 is provided continuously from the detection area AA to the peripheral area GA. Specifically, the upper electrode 35 is provided on the active layer 33 in the detection area AA, and is provided in the peripheral area GA, covering a portion of the first side surface 95s1, the upper surface 95b, and the second side surface 95s2 of the rib 95. The organic insulating film 26, the barrier film 27, and the lower electrode 31 and active layer 33 constituting the photodiode PD are not provided on the peripheral area GA side of the rib 95. Instead, the insulating film 38 and the upper electrode 35 are stacked on the superimposed insulating film 25. The upper electrode 35 extends to the contact portion CN and is connected to the connection terminal 81. With this configuration, the upper electrode 35 is connected to the contact portion CN, and a power supply signal VDDSNS is supplied from, for example, the power supply circuit 123 (see FIG. 1 ).

[0075] In the detection device 1 of this embodiment, in the manufacturing process of the multiple photodiodes PD, the active layer 33 is formed by applying a solution containing an organic material using, for example, an inkjet method or a spin coating method. The active layer 33 is applied to the entire detection area AA across the multiple photodiodes PD, but the ribs 95 block the solution, preventing it from flowing beyond the ribs 95 toward the outer edge of the substrate 21. Furthermore, because the ribs 95 have high contact angle regions 95a, the solution is prevented from overflowing the ribs 95 and flowing toward the peripheral area GA.

[0076] The ribs 95 are provided so as to overlap the outer edge of the organic insulating film 26, and therefore, an increase in the area of ​​the peripheral region GA can be suppressed compared to when the ribs 95 are provided in the same layer as the organic insulating film 26 and closer to the peripheral region GA than the organic insulating film 26. Furthermore, since the ribs 95 are provided so as to overlap the outer edge of the organic insulating film 26, the ribs 95 can be formed higher than the organic insulating film 26. As a result, the solution can be reliably blocked.

[0077] The height, width, and other shapes of the rib 95 shown in FIG. 6 are merely examples and can be changed as appropriate.

[0078] Second Embodiment Fig. 7 is a cross-sectional view showing a detection device according to a second embodiment. As shown in Fig. 7, in the detection device 1A according to the second embodiment, the rib 95 does not overlap with the organic insulating film 26 and is located closer to the peripheral area GA than the organic insulating film 26. More specifically, the rib 95 is located between the side surface 26s of the organic insulating film 26 and the outer edge of the substrate 21.

[0079] The detection device 1A also has dummy wirings 96, 97 provided closer to the peripheral region GA than the side surface 26s of the organic insulating film 26. The dummy wiring 96 is provided on the gate insulating film 23 in the same layer as the gate electrode 64. The dummy wiring 97 is provided on the interlayer insulating film 24 in the same layer as the source electrode 62 and the drain electrode 63. The dummy wiring 97 is provided in a region overlapping with the dummy wiring 96.

[0080] The rib 95 is provided so as to overlap the dummy wirings 96 and 97. As a result, the rib 95 is formed higher by the thickness of the dummy wirings 96 and 97. In this embodiment, since the dummy wirings 96 and 97 are provided, the rib 95 is formed higher than the organic insulating film 26. As a result, a larger space is formed between the side surface 26 s of the organic insulating film 26 and the first side surface 95 s 1 of the rib 95 than when the dummy wirings 96 and 97 are not present. As a result, when the active layer 33 is formed by coating using a solution containing an organic material, the solution can be pooled between the side surface 26 s of the organic insulating film 26 and the first side surface 95 s 1 of the rib 95, and the rib 95 can effectively block the solution.

[0081] In this embodiment, compared to the case where the dummy wirings 96, 97 are not present, a space for storing the solution can be secured even when the rib 95 is provided in a position closer to the side surface 26s of the organic insulating film 26. In other words, assuming that the rib 95 is provided so as to secure a space for storing the same amount of solution, in this embodiment, the rib 95 can be provided in a position closer to the detection area AA than in the case where the dummy wirings 96, 97 are not present. Therefore, in this embodiment, it is possible to suppress an increase in the area of ​​the peripheral area GA.

[0082] In this embodiment, the first side surface 95s1 of the rib 95 on the detection area AA side includes a first inclined surface 95c and a second inclined surface 95d that connects the first inclined surface 95c and the upper surface 95b of the rib 95. The inclination angle of the second inclined surface 95d is smaller than the inclination angle of the first inclined surface 95c. Note that the inclination angle in this embodiment is the angle with a plane parallel to the surface of the substrate 21.

[0083] With this configuration, when the active layer 33 is formed by applying a solution containing an organic material, even if the solution containing the organic material is dripped onto the rib 95, the solution flows along the first side surface 95s1 (first inclined surface 95c and second inclined surface 95d) toward the detection area AA, and is prevented from flowing toward the peripheral area GA.

[0084] The active layer 33 is provided over the entire detection area AA and also in the area of ​​the peripheral area GA between the side surface 26s of the organic insulating film 26 and the first side surface 95s1 of the rib 95 on the detection area AA side. As in the first embodiment, the upper electrode 35 is provided continuously from the detection area AA to the peripheral area GA. Specifically, the upper electrode 35 is provided on the active layer 33 in the detection area AA and covers the first side surface 95s1 (the first inclined surface 95c and the second inclined surface 95d), the top surface 95b, and the second side surface 95s2 of the rib 95 in the peripheral area GA. The upper electrode 35 then extends to the contact portion CN and is connected to the connection terminal 81.

[0085] The configuration of the rib 95 in the second embodiment is merely an example and can be modified as appropriate. For example, two layers of dummy wiring 96, 97 are provided in the area overlapping with the rib 95, but this is not limiting. Only one of the dummy wiring 96, 97 may be provided, or three or more layers of dummy wiring may be provided.

[0086] The shape of the rib 95 in the second embodiment can be combined with that in the first embodiment. That is, the rib 95 may be provided so as to overlap the outer edge of the organic insulating film 26, and the first side surface 95s1 of the rib on the detection area AA side may include a first inclined surface 95c and a second inclined surface 95d.

[0087] Third Embodiment Fig. 8 is a cross-sectional view showing a detection device according to a third embodiment. As shown in Fig. 8, a detection device 1B according to the third embodiment includes a first rib 95A and a second rib 95B. The second rib 95B is provided on the superimposed insulating film 25 in the same layer as the organic insulating film 26. The first rib 95A overlaps a portion of the second rib 95B and is disposed on the peripheral region GA side of the second rib 95B.

[0088] The first rib 95A and the second rib 95B do not overlap the organic insulating film 26 and are located closer to the peripheral region GA than the organic insulating film 26. More specifically, the first rib 95A and the second rib 95B are located between the side surface 26s of the organic insulating film 26 and the outer edge of the substrate 21.

[0089] Specifically, the first rib 95A overlaps with an upper surface 95Ba of the second rib 95B and a fourth side surface 95Bs2 of the second rib 95B opposite the detection area AA. A first side surface 95As1 of the first rib 95A facing the detection area AA overlaps with the upper surface 95Ba of the second rib 95B. A second side surface 95As2 of the first rib 95A opposite the detection area AA is located closer to the peripheral area GA (toward the outer edge of the substrate 21) than the fourth side surface 95Bs2 of the second rib 95B. The insulating film 38 covers the second rib 95B and is disposed between the second rib 95B and the first rib 95A.

[0090] A high contact angle region 95Aa is formed on the upper surface 95Ab of the first rib 95A. The high contact angle region 95Aa of the first rib 95A has a larger contact angle with a solution containing the organic material that constitutes the active layer 33 than the contact angle with the organic insulating film 26. The contact angle of the second rib 95B with a solution containing the organic material that constitutes the active layer 33 is smaller than that of the first rib 95A. In other words, the first rib 95A has higher liquid repellency and liquid phobicity than the second rib 95B. The first rib 95A is formed of, for example, a resin material containing fluorine. The second rib 95B is formed of, for example, the same material as the organic insulating film 26.

[0091] With this configuration, a space for storing the solution that forms the active layer 33 is formed between the side surface 26s of the organic insulating film 26 and the third side surface 95Bs1 of the second rib 95B on the detection region AA side and the first side surface 95As1 of the first rib 95A on the detection region AA side. In this embodiment, the first rib 95A and the second rib 95B are arranged to overlap, so the space formed between the organic insulating film 26 and the first rib 95A and the second rib 95B can be made larger than in a configuration in which only one of the first rib 95A and the second rib 95B is provided. In other words, assuming that the first rib 95A and the second rib 95B are arranged to ensure a space for storing the same amount of solution, this embodiment allows the first rib 95A and the second rib 95B to be arranged closer to the detection region AA than in a configuration in which only one of the first rib 95A and the second rib 95B is provided. Therefore, this embodiment can suppress an increase in the area of ​​the peripheral region GA.

[0092] Furthermore, a step portion is formed on the detection area AA side of the first rib 95A and the second rib 95B, and at least the high contact angle region 95Aa of the first rib 95A is liquid-repellent and liquid-phobic. As a result, even if a solution containing an organic material is dropped onto the first rib 95A when applying and forming the active layer 33 using a solution containing an organic material, the solution flows toward the detection area AA along the first side surface 95As1 of the first rib 95A and the third side surface 95Bs1 of the second rib 95B, and is prevented from flowing toward the peripheral area GA.

[0093] The active layer 33 is provided over the entire detection area AA, and is also provided in the area of ​​the peripheral area GA between the side surface 26s of the organic insulating film 26 and the third side surface 95Bs1 of the second rib 95B. As in the first embodiment, the upper electrode 35 is provided continuously from the detection area AA to the peripheral area GA. Specifically, the upper electrode 35 is provided on the active layer 33 in the detection area AA, and is provided to cover the first rib 95A and the second rib 95B in the peripheral area GA. The upper electrode 35 then extends to the contact portion CN and is connected to the connection terminal 81.

[0094] The configurations of the first rib 95A and the second rib 95B in the third embodiment are merely examples and can be modified as appropriate. For example, the high contact angle region 95Aa of the first rib 95A is not limited to the top surface 95Ab, and may also be provided on the first side surface 95As1 and the second side surface 95As2. Furthermore, both the first rib 95A and the second rib 95B may be liquid-repellent and liquid-phobic.

[0095] The configurations of the first to third embodiments described above can be combined as appropriate. For example, the rib 95 may be provided so as to overlap the outer edge of the organic insulating film 26, and the rib 95 shown in the second embodiment or the first rib 95A and the second rib 95B shown in the third embodiment may be provided closer to the peripheral region GA than the side surface 26s of the organic insulating film 26.

[0096] Although preferred embodiments of the present disclosure have been described above, the present disclosure is not limited to such embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible within the scope of the present disclosure. Appropriate modifications made within the scope of the present disclosure naturally fall within the technical scope of the present disclosure. At least one of various omissions, substitutions, and modifications of components can be made within the scope of the gist of each of the above-described embodiments and modifications.

[0097] 1, 1A, 1B Detector 10 Sensor section 21 Substrate 26 Organic insulating film 27 Barrier film 31 Lower electrode 32 Lower buffer layer 33 Active layer 34 Upper buffer layer 35 Upper electrode 38 Insulating film 81 Connection terminal 90 Sealing film 95 Rib 95A First rib 95B Second rib 95a, 95Aa High contact angle region 96, 97 Dummy wiring PD Photodiode PX Sensor pixel Tr Drive transistor

Claims

1. A detection device comprising: a substrate; a plurality of photodiodes arranged in a matrix in a detection region of the substrate, each photodiode being stacked in the order of a lower electrode, an active layer, and an upper electrode; an organic insulating film provided between the substrate and the plurality of photodiodes; and a rib provided in a peripheral region of the substrate different from the detection region, surrounding the active layer, wherein the contact angle of the rib with a solution containing an organic material that constitutes the active layer is larger than the contact angle of the organic insulating film with the solution containing the organic material that constitutes the active layer.

2. The detection device according to claim 1, wherein the organic insulating film is not provided in the peripheral region of the substrate, and the rib is provided so as to overlap the outer edge of the organic insulating film.

3. A detection device according to claim 1, wherein the organic insulating film is not provided in the peripheral region of the substrate, and a dummy wiring is provided closer to the peripheral region than the side surface of the organic insulating film, and the rib is provided so as to overlap the dummy wiring.

4. A detection device as described in claim 1, wherein the side of the rib facing the detection area includes a first inclined surface and a second inclined surface connecting the first inclined surface and the upper surface of the rib, and the inclination angle of the second inclined surface is smaller than the inclination angle of the first inclined surface.

5. The detection device according to claim 1, wherein the upper surfaces of the ribs are located above the height of the upper surface of the active layer in the detection region in a direction perpendicular to the substrate.

6. The detection device according to claim 1, wherein the ribs include a first rib whose contact angle with a solution containing the organic material that constitutes the active layer is larger than the contact angle of the organic insulating film, and a second rib whose contact angle with a solution containing the organic material that constitutes the active layer is relatively small, and the first rib is provided so as to overlap the upper surface of the second rib and the side surface of the second rib opposite to the detection region.

7. A detection device according to claim 1, further comprising connection terminals provided in the peripheral region of the substrate for supplying a predetermined potential to the plurality of photodiodes, wherein the upper electrode is provided continuously across the plurality of photodiodes in the detection region, covers the active layer and the rib, and is provided from the detection region to the peripheral region, contacting the connection terminals.

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