Backlight module and liquid crystal display

Abstract

Disclosed in the present application are a backlight module and a liquid crystal display. A thermal insulator is added to at least one of a light source layer, a quantum dot layer and an optical film layer, wherein the thermal conductivity coefficient of the thermal insulator is less than the thermal conductivity coefficient of the light source layer, quantum dot layer or optical film layer where the thermal insulator is located.

Description

Backlight module and liquid crystal display

[0001] This application claims priority to Chinese Patent Application No. 202411233066.5, filed on September 03, 2024, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the technical field of display, in particular to a backlight module and a liquid crystal display. BACKGROUND

[0003] As a new semiconductor nanocrystalline luminescent material on the market in recent years, quantum dots have advantages of high color gamut, narrow-band luminescence, size-controlled luminescence and the like in the optical aspect compared with traditional fluorescent powder series. However, due to the structure of quantum dots, they are easily affected by the external environment and lose photoluminescence ability, thereby causing the color brightness attenuation of the backlight module. SUMMARY

[0004] Therefore, the present application provides a backlight module and a liquid crystal display, aiming to further improve the RA stability of quantum dots in the backlight module.

[0005] In a first aspect, a backlight module comprises:

[0006] a light source layer;

[0007] a quantum dot layer disposed on the light emitting side of the light source layer; and / or

[0008] at least one optical film layer disposed between the light source layer and the quantum dot layer and / or disposed on the side of the quantum dot layer away from the light source layer;

[0009] At least one of the light source layer, the quantum dot layer and the optical film layer has a heat insulator, and the thermal conductivity of the heat insulator is less than the thermal conductivity of the light source layer, the quantum dot layer or the optical film layer in which the heat insulator is located.

[0010] In a second aspect, the present application provides a liquid crystal display comprising a backlight module, wherein the backlight module comprises:

[0011] a light source layer;

[0012] a quantum dot layer disposed on the light emitting side of the light source layer; and / or

[0013] at least one optical film layer disposed between the light source layer and the quantum dot layer and / or disposed on the side of the quantum dot layer away from the light source layer;

[0014] At least one of the light source layer, the quantum dot layer, and the optical film layer has a thermal insulator, and the thermal conductivity of the thermal insulator is less than the thermal conductivity of the light source layer, the quantum dot layer, or the optical film layer in which the thermal insulator is located. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative effort.

[0016] FIG. 1 is a schematic structural diagram of a backlight module according to some embodiments of the present application;

[0017] FIG. 2 is another schematic structural diagram of a backlight module according to some embodiments of the present application;

[0018] FIG. 3 is another schematic structural diagram of a backlight module according to some embodiments of the present application;

[0019] FIG. 4 is another schematic structural diagram of a backlight module according to some embodiments of the present application;

[0020] FIG. 5 is a test result of backlight chromaticity stability over time of Comparative Example 1;

[0021] FIG. 6 is a test result of backlight chromaticity stability over time of Example 6;

[0022] FIG. 7 is a test result of backlight chromaticity reversibility of Comparative Example 1 with x as the standard;

[0023] FIG. 8 is a test result of backlight chromaticity reversibility of Comparative Example 1 with y as the standard;

[0024] FIG. 9 is a test result of backlight chromaticity reversibility of Example 6 with x as the standard;

[0025] FIG. 10 is a test result of backlight chromaticity reversibility of Example 6 with y as the standard;

[0026] FIG. 11 is a schematic diagram of test results of heat flow rate of Comparative Example 1 and Example 6.

[0027] In the drawings:

[0028] 100, light source layer;

[0029] 200, quantum dot layer;

[0030] 300, optical film layer; 301, light splitting film; 302, diffusion film; 303, brightness enhancement film;

[0031] 400, back plate;

[0032] 500, first thermal insulation layer;

[0033] 600, second thermal insulation layer;

[0034] 700, thermal conductive layer. Embodiments of the present application

[0035] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only for the purpose of illustration and explanation of the present application, and are not intended to limit the present application.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0037] In the present application, the orientation words such as "upper" and "lower" are generally used to refer to the upper and lower positions of the device in the actual use or working state, and specifically refer to the directions of the drawing surface in the drawings; and "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish sequences.

[0038] In the present application, "and / or" describes the association relationship of the associated objects, which means that there can be three kinds of relationships, for example, A and / or B, which can represent the following cases: A exists alone, A and B exist together, and B exists alone. Wherein A and B can be singular or plural.

[0039] In the present application, "at least one" means one or more, and "multiple" means two or more. "One or more", "at least one of the following" or similar expressions mean any combination of these items, including any combination of single item or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can represent a, b, c, a-b (i.e. a and b), a-c, b-c, or a-b-c, wherein a, b, and c can be single or multiple.

[0040] Various embodiments of the present application can exist in a range of forms; it should be understood that the description in a range form is merely for the convenience and brevity, and should not be understood as a hard limitation on the scope of the present application; therefore, it should be considered that the range described has specifically disclosed all possible sub-ranges and single values within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5, and 6, which applies to any range. In addition, whenever a numerical range is indicated herein, it refers to any cited number (fraction or integer) within the indicated range.

[0041] Currently, the heat source of a conventional Miniled module mainly comes from a lamp panel composed of multiple light-emitting LEDs and corresponding electronic components. The quantum dot layer is above the LED lamp panel, and the heat source transmits heat to the quantum dot layer. If the quantum dot layer is placed on the Miniled lamp panel, the backlight color brightness of the module drifts to different degrees, affecting the RA stability of the quantum dot layer.

[0042] The RA stability of the quantum dot layer is mainly affected by light, heat, water, oxygen, etc. Light is mainly affected by the brightness specification of the backlight module, which is difficult to adjust greatly. Water and oxygen are mainly affected by the upper and lower barrier films of the quantum dot layer. A layer of inorganic layer such as silicon oxide is plated on the surface of the upper and lower barrier films, which has excellent water and oxygen barrier performance and is beneficial to ensuring the RA stability of the quantum dot layer in a high-temperature and high-humidity water and oxygen environment.

[0043] After the backlight module architecture is determined and the inorganic layer is plated, the RA stability of the quantum dot layer is difficult to change greatly. In view of this, the present application mainly reduces the influence of temperature on the quantum dot layer from the perspective of heat, thereby further improving the RA stability of the quantum dot layer.

[0044] According to a first aspect of the present application, a backlight module is provided, comprising:

[0045] a light source layer;

[0046] a quantum dot layer disposed on the light emitting side of the light source layer; and / or

[0047] at least one optical film layer disposed between the light source layer and the quantum dot layer and / or on the side of the quantum dot layer away from the light source layer;

[0048] a back plate for supporting the light source layer, the quantum dot layer, and the optical film layer;

[0049] At least one of the light source layer, the quantum dot layer, and the optical film layer has a heat insulator, and the thermal conductivity of the heat insulator is less than the thermal conductivity of the light source layer, the quantum dot layer, or the optical film layer in which the heat insulator is located.

[0050] The backlight module provided by the embodiments of the present application adds a heat insulator in at least one of the light source layer, the quantum dot layer and the optical film layer, the thermal conductivity of the heat insulator is less than the thermal conductivity of the light source layer, the quantum dot layer or the optical film layer in which the heat insulator is located, which helps to reduce the heat flow rate of the backlight module with the heat insulator added under the same light source energy input, and significantly reduces the influence of heat transfer of the light source layer on the backlight module.

[0051] In some embodiments of the present application, referring to FIG. 1, a backlight module is provided, comprising:

[0052] a light source layer 100;

[0053] a quantum dot layer 200 arranged on one side of the light source layer 100;

[0054] a back plate 400 arranged on a side of the light source layer 100 away from the quantum dot layer 200, for supporting the light source layer 100 and the quantum dot layer 200;

[0055] wherein the light source layer 100 has a heat insulator therein.

[0056] In some embodiments of the present application, a backlight module is provided, comprising:

[0057] a light source layer 100;

[0058] a quantum dot layer 200 arranged on one side of the light source layer 100;

[0059] a back plate 400 arranged on a side of the light source layer 100 away from the quantum dot layer 200, for supporting the light source layer 100 and the quantum dot layer 200;

[0060] wherein the quantum dot layer 200 has a heat insulator therein.

[0061] In some embodiments of the present application, referring to FIG. 2, a backlight module is provided, comprising:

[0062] a light source layer 100;

[0063] a quantum dot layer 200 arranged on one side of the light source layer 100;

[0064] an optical film layer 300 arranged between the light source layer 100 and the quantum dot layer 200;

[0065] a back plate 400 arranged on a side of the light source layer 100 away from the optical film layer 300, for supporting the light source layer 100, the optical film layer 300 and the quantum dot layer 200;

[0066] wherein the light source layer 100 has a heat insulator therein.

[0067] In some embodiments of the present application, a backlight module is provided, comprising:

[0068] a light source layer 100;

[0069] a quantum dot layer 200 disposed on one side of the light source layer 100;

[0070] an optical film layer 300 disposed between the light source layer 100 and the quantum dot layer 200;

[0071] a back plate 400 disposed on a side of the light source layer 100 away from the optical film layer 300, for supporting the light source layer 100, the optical film layer 300 and the quantum dot layer 200;

[0072] wherein the quantum dot layer 200 has a heat insulator therein.

[0073] In some embodiments of the present application, a backlight module is provided, comprising:

[0074] a light source layer 100;

[0075] a quantum dot layer 200 disposed on one side of the light source layer 100;

[0076] an optical film layer 300 disposed between the light source layer 100 and the quantum dot layer 200;

[0077] a back plate 400 disposed on a side of the light source layer 100 away from the optical film layer 300, for supporting the light source layer 100, the optical film layer 300 and the quantum dot layer 200;

[0078] wherein the optical film layer 300 has a heat insulator therein.

[0079] In some embodiments of the present application, referring to FIG. 3, a backlight module is provided, comprising:

[0080] a light source layer 100;

[0081] a quantum dot layer 200 disposed on one side of the light source layer 100;

[0082] an optical film layer 300 disposed on a side of the quantum dot layer 200 away from the light source layer 100;

[0083] a back plate 400 disposed on a side of the light source layer 100 away from the quantum dot layer 200, for supporting the light source layer 100, the quantum dot layer 200 and the optical film layer 300;

[0084] wherein the light source layer 100 has a heat insulator therein. This helps to block heat at the light source, preventing heat from being transmitted to the quantum dot layer, thereby increasing the likelihood of the technical solution of directly placing the quantum dot layer on the light source layer being realized.

[0085] In some embodiments of the present application, a backlight module is provided, comprising:

[0086] a light source layer 100;

[0087] a quantum dot layer 200 disposed on one side of the light source layer 100;

[0088] an optical film layer 300 disposed on a side of the quantum dot layer 200 away from the light source layer 100;

[0089] a back plate 400 disposed on a side of the light source layer 100 away from the quantum dot layer 200, for supporting the light source layer 100, the quantum dot layer 200 and the optical film layer 300;

[0090] wherein the quantum dot layer 200 has a heat insulating object therein.

[0091] In some embodiments of the present application, a backlight module is provided, comprising:

[0092] a light source layer 100;

[0093] a quantum dot layer 200 disposed on one side of the light source layer 100;

[0094] an optical film layer 300 disposed on a side of the quantum dot layer 200 away from the light source layer 100;

[0095] a back plate 400 disposed on a side of the light source layer 100 away from the quantum dot layer 200, for supporting the light source layer 100, the quantum dot layer 200 and the optical film layer 300;

[0096] wherein the quantum dot layer 200 has a heat insulating object therein.

[0097] In some embodiments of the present application, referring to FIG. 4, a backlight module is provided, comprising:

[0098] a light source layer 100;

[0099] a quantum dot layer 200 disposed on one side of the light source layer 100; wherein the second encapsulant of the quantum dot layer 200 is doped with heat insulating particles;

[0100] an optical film layer 300 disposed on a side of the quantum dot layer 200 away from the light source layer 100;

[0101] a back plate 400 disposed on a side of the light source layer 100 away from the quantum dot layer 200, for supporting the light source layer 100, the quantum dot layer 200 and the optical film layer 300;

[0102] In addition, the quantum dot layer 200 is provided with a first thermal insulation layer 500 on at least a surface close to the light source layer 100, the thermal conductivity of the first thermal insulation layer 500 is less than that of the quantum dot layer 200; the light source layer 100 is provided with a second thermal insulation layer 600 on at least a surface close to the quantum dot layer 200, the thermal conductivity of the second thermal insulation layer 600 is less than that of the light source layer 100; and a thermal conductive layer 700 is further provided between the back plate 400 and the light source layer 100, the thermal conductivity of the thermal conductive layer 700 is greater than that of the light source layer 100.

[0103] In some embodiments of the present application, the thermal insulation material is selected from a thermal insulation material with high visible light transmittance and low thermal conductivity.

[0104] In some embodiments of the present application, the visible light transmittance of the thermal insulation material can be greater than or equal to 90% and less than 100%; and the thermal conductivity of the thermal insulation material can be greater than or equal to 0.001 W / (m·K) and less than or equal to 0.1 W / (m·K).

[0105] In some embodiments of the present application, the thermal insulation material can include one or more of thermal insulation gel, thermal insulation fiber and thermal insulation microparticle.

[0106] In some embodiments of the present application, the thermal insulation gel includes but is not limited to inorganic aerogel, organic aerogel, carbon aerogel and composite gel. The inorganic aerogel is mainly composed of inorganic materials such as silicon oxide and aluminum oxide. The composite gel is obtained by compounding organic and inorganic gels, and has higher thermal insulation and stability. The thermal insulation gel has a pore size of micro-nanometer and a high specific surface area, which can effectively reduce heat transfer and achieve the purpose of thermal insulation.

[0107] In some embodiments of the present application, the thermal insulation fiber has light weight, high porosity and high flexibility, and can adapt to different application requirements and maintain stable performance in a long time high temperature environment. The thermal insulation fiber includes but is not limited to ceramic fiber, glass fiber, basalt fiber, aerogel fiber and aluminum silicate fiber.

[0108] In some embodiments of the present application, the thermal insulation fiber is selected from micron-sized glass fiber. The particle size of the glass fiber will affect the heat preservation and insulation performance of the thermal insulation body. For example, the smaller the particle size of the glass fiber, the larger the specific surface area, and the smaller the gap between the thermal insulation fibers, thus having better thermal insulation performance; otherwise, the thermal insulation performance will be poor.

[0109] In some embodiments of the present application, the heat-insulating microparticles include, but are not limited to, one or more of Sn-doped In2O3 (ITO) heat-insulating microparticles, Sb-doped SnO2 (ATO) heat-insulating microparticles, and TiO2 heat-insulating microparticles. ITO and ATO have good spectral selectivity and both transparency and heat-insulating performance; the unique size effect, local field effect, and quantum effect of TiO2 heat-insulating microparticles make TiO2 have good reflective heat-insulating performance, and TiO2 heat-insulating microparticles of a suitable size can be selected according to the requirements of different application scenarios.

[0110] In some embodiments of the present application, as the amount of TiO2 heat-insulating microparticles increases, the stability of backlight chroma increases significantly, but too much TiO2 heat-insulating microparticles will lead to uneven dispersion in the bonding layer and affect the improvement of stability.

[0111] In some embodiments of the present application, the particle size of the heat-insulating microparticles can be 0.1-1 μm; in some other embodiments of the present application, the particle size of the heat-insulating microparticles can also be 0.3-0.6 μm.

[0112] In some embodiments of the present application, the heat-insulating microparticles have different particle sizes and can play a role in diffuse reflection. In some embodiments of the present application, the transparent heat-insulating microparticles include 10-30 wt% heat-insulating microparticles with a particle size of 0.1-0.3 μm, 20-40 wt% heat-insulating microparticles with a particle size of 0.3-0.7 μm, and 40-60 wt% heat-insulating microparticles with a particle size of 0.7-1 μm.

[0113] In some embodiments of the present application, the light source layer can include:

[0114] a lamp panel including a substrate and a light source chip disposed on the substrate;

[0115] a first encapsulation adhesive layer disposed on the lamp panel and used for encapsulating the light source chip on the substrate;

[0116] wherein, when the heat-insulating object is disposed in the first encapsulation adhesive layer, the thermal conductivity of the heat-insulating object is less than the thermal conductivity of the light source layer.

[0117] In some embodiments of the present application, the lamp panel can include an LED lamp panel or a MiniLED lamp panel.

[0118] In some embodiments of the present application, the first encapsulation adhesive layer can include a first encapsulation body, and the light source chip is encapsulated by the first encapsulation body to fix the light source chip on the substrate.

[0119] In some embodiments of the present application, the quantum dot layer can include:

[0120] quantum dots; and a second encapsulation adhesive layer including a second encapsulation body and used for encapsulating the quantum dots;

[0121] When the heat insulator is arranged in the second encapsulation layer, the heat insulator and the quantum dots are uniformly dispersed in the second encapsulation layer, and the heat conductivity coefficient of the heat insulator is less than the heat conductivity coefficient of the quantum dot layer.

[0122] In some embodiments of the present application, the quantum dot layer can further include:

[0123] The first barrier layer and the second barrier layer are arranged on two sides of the first encapsulation layer along the light direction where the quantum dots are located.

[0124] In some embodiments of the present application, the first barrier layer and the second barrier layer can be PET barrier layers.

[0125] In some embodiments of the present application, the PET barrier layer includes a PET substrate and an inorganic oxide coating layer coated on the PET substrate, which is used to block the effect of external water and oxygen.

[0126] In some embodiments of the present application, the thickness of the PET barrier layer can be 10-200 μm; in some other embodiments of the present application, the thickness of the PET barrier layer can be 50-150 μm.

[0127] Referring to FIG. 4, the present application provides a preparation method of a quantum dot layer, including the following steps:

[0128] Providing raw materials of quantum dots, heat insulators, and a second encapsulation layer;

[0129] Mixing the raw materials of quantum dots, heat insulators, and a second encapsulation layer into a premix;

[0130] Forming the premix into a quantum dot layer;

[0131] The heat conductivity coefficient of the heat insulator is less than the heat conductivity coefficient of the quantum dots and / or the second encapsulation layer.

[0132] The quantum dots and the heat insulator are uniformly dispersed in the second encapsulation layer to form a quantum dot layer.

[0133] Coating a first barrier layer and a second barrier layer on the upper and lower surfaces of the quantum dot layer, respectively, and the first barrier layer is located below the second barrier layer.

[0134] In some embodiments of the present application, the two side surfaces of the quantum dot layer can be further provided with a first sealing protective layer and a second sealing protective layer. The materials of the first sealing protective layer and the second sealing protective layer can be acrylic resin, which not only can protect the quantum dot layer coated therein, but also can effectively prevent the quantum dot layer from being scratched, and can effectively isolate the quantum dot layer from the outside, play a role in preventing water and oxygen, and prevent the edge of the quantum dot layer from failing, so as to improve the light output effect.

[0135] In some embodiments of the present application, the thickness of the first sealing protective layer and the second sealing protective layer can be 0.01 to 5 μm. In some other embodiments of the present application, the thickness of the first sealing protective layer and the second sealing protective layer can also be 0.1 to 1 μm.

[0136] In some embodiments of the present application, the preparation raw material of the quantum dots generally comprises quantum dots, a solvent, a surfactant, a stabilizer and the like. According to the production scale, the quantum dots and the solvent are accurately weighed, the quantum dots are put into the solvent, and the quantum dots are stirred uniformly by using a stirrer. The pH value of the solution is adjusted as needed to ensure the stability and reaction performance of the quantum dots. The dissolved quantum dot solution is filtered through a filter to remove impurities and precipitates, and the quantum dots are obtained by drying.

[0137] In some embodiments of the present application, the quantum dots can include but are not limited to one or more of a single-structure quantum dot, a core-shell structure quantum dot and a perovskite type semiconductor material.

[0138] In some embodiments of the present application, the quantum dots include but are not limited to at least one of a red quantum dot, a green quantum dot or a blue quantum dot.

[0139] In some embodiments of the present application, the particle size of the quantum dots can be 5 to 20 nm.

[0140] In some embodiments of the present application, the quantum dots include red quantum dots and green quantum dots. According to the different light emitted by different backlight sources, the proportion of different types of quantum dots is adjusted, which is not specifically limited herein.

[0141] In some embodiments of the present application, the particle size of the red quantum dots is 5 to 10 nm, and the red quantum dot material is selected from one or a combination of two of CdS, CdSe, CdTe, ZnSe, InP or InAs, or a combination of two or more materials.

[0142] In some embodiments of the present application, the particle size of the green quantum dots is 2 to 5 nm, and the green quantum dot material is selected from one or a combination of two of CdS, CdSe, CdTe, ZnSe, InP or InAs, or a combination of two or more materials.

[0143] In some embodiments of the present application, the thickness of the quantum dot layer can be 10 to 200 μm. In some other embodiments of the present application, the thickness of the quantum dot layer can be 30 to 150 μm. In some other embodiments of the present application, the thickness of the quantum dot layer can be 50 to 100 μm.

[0144] It should be noted that the first encapsulant and the second encapsulant include but are not limited to one or more of an acrylic UV glue, a silicone UV glue, an allyl UV glue, a polyurethane UV glue, and an acrylamide UV glue, which are helpful for rapid curing under irradiation of ultraviolet light and have the characteristics of high strength, high transparency, and high weather resistance.

[0145] In some embodiments of the present application, the thickness ratio of the quantum dot layer to the light source layer is in the range of 0.1 to 0.5.

[0146] In some embodiments of the present application, the distance between the quantum dot layer and the light source layer is in the range of 0-1 mm.

[0147] In some embodiments of the present application, the optical film layer includes:

[0148] The light splitting film is arranged between the light source layer and the quantum dot layer.

[0149] The third encapsulating glue layer includes a third encapsulant and is used to cover the surface of the light splitting film.

[0150] When the thermal insulator is arranged in the third encapsulating glue layer, the thermal conductivity of the thermal insulator is less than the thermal conductivity of the optical film layer.

[0151] In some embodiments of the present application, the optical film layer includes:

[0152] The light splitting film and / or the diffusion film are arranged between the light source layer and the quantum dot layer.

[0153] The third encapsulating glue layer includes a third encapsulant and is used to cover the surface of the light splitting film.

[0154] The fourth encapsulating glue layer includes a fourth encapsulant and is used to cover the surface of the diffusion film.

[0155] When the light splitting film and the diffusion film exist simultaneously, the light splitting film is arranged close to the light source layer, and the diffusion film is arranged on the side of the light splitting film away from the light source layer.

[0156] When the thermal insulator is arranged in the third encapsulating glue layer and the fourth encapsulating glue layer, the thermal conductivity of the thermal insulator is less than the thermal conductivity of the optical film layer.

[0157] In some embodiments of the present application, the optical film layer can include:

[0158] The light splitting film and / or the diffusion film are arranged on the side of the quantum dot layer away from the light source layer.

[0159] The third encapsulating glue layer includes a third encapsulant and is used to cover the surface of the light splitting film.

[0160] The fourth encapsulating glue layer includes a fourth encapsulant and is used to cover the surface of the diffusion film.

[0161] When the light splitting film and the diffusion film exist simultaneously, the light splitting film is arranged close to the quantum dot layer, and the diffusion film is arranged on the side of the light splitting film away from the quantum dot layer.

[0162] When the thermal insulation is arranged in the third encapsulation adhesive layer and / or the fourth encapsulation adhesive layer, the thermal conductivity of the thermal insulation is less than the thermal conductivity of the optical film layer.

[0163] It should be noted that the material selection and function of the third encapsulation and the fourth encapsulation can be the same as those of the first encapsulation and the second encapsulation, and will not be described in detail here.

[0164] In some embodiments of the present application, the optical film layer can further include:

[0165] The brightness enhancement film is arranged on the side of the quantum dot layer away from the light source layer.

[0166] The fifth encapsulation adhesive layer includes a fifth encapsulation and is used to cover the surface of the brightness enhancement film.

[0167] The brightness enhancement film can be arranged on the side of the light splitting film close to the quantum dot layer, or on the side of the light splitting film away from the quantum dot layer. The brightness enhancement film can be arranged on the side of the diffusion film close to the quantum dot layer, or on the side of the diffusion film away from the quantum dot layer.

[0168] In some embodiments of the present application, a first thermal insulation layer is arranged on the side of the quantum dot layer close to the light source layer, and the thermal conductivity of the first thermal insulation layer is less than the thermal conductivity of the quantum dot layer.

[0169] In some embodiments of the present application, the visible light transmittance of the first thermal insulation layer is greater than or equal to 90%, and the thermal conductivity is less than or equal to 0.1 W / (m·K).

[0170] In some embodiments of the present application, the number of layers of the first thermal insulation layer is greater than or equal to 2. The more the number of layers, the better the thermal insulation effect, but it may affect the visible light transmittance. Therefore, the number of layers should be selected by comprehensively balancing the thermal insulation effect and the visible light transmittance, so as to improve the heat insulation effect while ensuring the water and oxygen insulation performance.

[0171] In some embodiments of the present application, a second thermal insulation layer is arranged on the surface of the light source layer close to the quantum dot layer, and the thermal conductivity of the second thermal insulation layer is less than the thermal conductivity of the light source layer.

[0172] In some embodiments of the present application, the visible light transmittance of the second thermal insulation layer is greater than or equal to 90%, and the thermal conductivity is less than or equal to 0.1 W / (m·K). As an example, the organic transparent coating is an organic material layer formed by coating with transparent organic paint or existing transparent organic glass. The heat insulation can be realized to conduct heat to the lamp plate below as much as possible to increase the temperature difference between the backlight module and the LED lamp plate while ensuring the constant brightness of the backlight, thereby improving the RA stability of the quantum dot layer itself.

[0173] It should be noted that the material selection of the second thermal insulation layer and the first thermal insulation layer can be the same or different, and will not be described in detail here.

[0174] In some embodiments of the present application, a back plate is further included, the back plate being used to support the light source layer, the quantum dot layer and the optical film layer; a heat conduction layer is arranged between the back plate and the light source layer, and the heat conduction coefficient of the heat conduction layer is greater than the heat conduction coefficient of the light source layer.

[0175] In some embodiments of the present application, the heat conduction layer is formed by coating a heat conduction adhesive with a high light transmittance, and the coating form can include but is not limited to bonding, spin coating, blade coating, spraying, curing and the like. As an example, the heat conduction adhesive is selected as graphite adhesive.

[0176] In some embodiments of the present application, the thickness ratio of the heat conduction layer to the light source layer is in the range of 0.1 to 1. The thickness of the heat conduction layer and the light source layer has a matching ratio relationship, and a too small ratio cannot achieve good heat conduction effect, and a too large ratio can easily lead to an increase in the thickness of the module.

[0177] In some embodiments of the present application, the larger the area of the heat conduction adhesive, the better the heat dissipation effect. As an example, the heat conduction adhesive can be fully attached between the light source layer and the back plate.

[0178] In some embodiments of the present application, the surface of the back plate facing the light source layer is a B back plate, and the B back plate is selected to be a metal with better heat conduction, such as aluminum, when the strength is allowed.

[0179] In some embodiments of the present application, the surface of the back plate away from the light source layer is a C back plate, and the back surface of the C back plate can be attached to a larger area of heat dissipation material, such as graphite adhesive.

[0180] According to a second aspect of the present application, a liquid crystal display is provided, comprising a backlight module, the backlight module comprising:

[0181] a light source layer;

[0182] a quantum dot layer arranged on the light emitting side of the light source layer; and / or

[0183] at least one optical film layer arranged between the light source layer and the quantum dot layer and / or arranged on the side of the quantum dot layer away from the light source layer;

[0184] At least one of the light source layer, the quantum dot layer and the optical film layer has a thermal insulation material, and the thermal conductivity coefficient of the thermal insulation material is less than the thermal conductivity coefficient of the light source layer, the quantum dot layer or the optical film layer in which the thermal insulation material is arranged.

[0185] It should be noted that the structure of the backlight module in the liquid crystal display is the same as that of the backlight module according to the first aspect of the present application, and will not be described in detail here.

[0186] The application will be specifically described below through specific examples. The following examples are only part of the application and are not a limitation of the application. The raw materials used in the following examples are commercially available unless otherwise specified.

[0187] The quantum dots used in the preparation examples and embodiments of the application have a particle size of 5 to 20 nm; the TiO2 thermal insulation particles have a particle size of 0.1 to 1 μm, and the visible light transmittance of the TiO2 thermal insulation particles is 90%, and the thermal conductivity coefficient is ≤0.1 W / (m·K).

[0188] Embodiment 1

[0189] A backlight module comprises:

[0190] A light source layer comprising a lamp plate, the lamp plate comprising an FPC substrate and LED chips disposed on the FPC substrate, the LED chips being encapsulated on the FPC substrate by a first encapsulating adhesive layer;

[0191] A quantum dot layer disposed on one side of the light source layer;

[0192] A back plate, the light source layer and the quantum dot layer being adhered to the back plate by a glue frame; wherein the back plate is made of iron / aluminum material;

[0193] The quantum dot layer is prepared by the following method:

[0194] The quantum dots and the TiO2 thermal insulation particles are mixed by a first encapsulating body at a mass ratio of 1:0.15 to form a first encapsulating adhesive layer containing the quantum dots and the thermal insulation particles, the thickness of the first encapsulating adhesive layer being 100 μm; wherein the first encapsulating body is an acrylate ultraviolet curing adhesive.

[0195] A first PET barrier film and a second PET barrier film are coated on the upper and lower surfaces of the first encapsulating adhesive layer, the thickness of the first PET barrier film and the second PET barrier film being 30 μm.

[0196] Embodiment 2

[0197] A backlight module, which differs from the backlight module of Embodiment 1 in that the thermal insulation material is replaced by silica aerogel.

[0198] Embodiment 3

[0199] A backlight module, which differs from the backlight module of Embodiment 1 in that the thermal insulation material is replaced by micron-sized glass fibers.

[0200] Embodiments 4-5

[0201] A backlight module, which differs from the backlight module of Embodiment 1 in that the particle size of the thermal insulation particles is different, the particle size of the thermal insulation particles being 1-10 μm in Embodiment 4 and 10-20 μm in Embodiment 5.

[0202] Embodiment 6

[0203] A backlight module comprises:

[0204] A light source layer comprises a lamp plate, the lamp plate comprises an FPC substrate and an LED chip arranged on the FPC substrate, and the LED chip is encapsulated on the FPC substrate by a first encapsulation adhesive layer;

[0205] A quantum dot layer is arranged on one side of the light source layer, and the quantum dot layer is prepared according to the preparation method of the quantum dot layer in Embodiment 1;

[0206] An optical film layer comprises a light splitting film, a diffusion film and a brightness enhancement film arranged in sequence along a light emitting direction, wherein the light splitting film is arranged on a side of the quantum dot layer away from the light source layer, the diffusion film is arranged on a side of the light splitting film away from the quantum dot layer, and the brightness enhancement film is arranged on a side of the diffusion film away from the light splitting film;

[0207] A back plate is glued to the light source layer, the quantum dot layer and the optical film layer by a glue frame, and the back plate is made of iron / aluminum material.

[0208] Embodiment 7

[0209] A backlight module comprises:

[0210] A light source layer comprises a lamp plate, the lamp plate comprises an FPC substrate and an LED chip arranged on the FPC substrate, and the LED chip is encapsulated on the FPC substrate by a first encapsulation adhesive layer;

[0211] A quantum dot layer is arranged on one side of the light source layer;

[0212] A first heat insulation layer is arranged on the surfaces of the quantum dot layer along the light emitting direction, and the first heat insulation layer is formed by coating with an indium tin oxide transparent heat insulation paint;

[0213] An optical film layer comprises a light splitting film, a diffusion film and a brightness enhancement film arranged in sequence along a light emitting direction, wherein the light splitting film is arranged on a side of the quantum dot layer away from the light source layer;

[0214] A back plate is glued to the light source layer, the quantum dot layer and the optical film layer by a glue frame, and the back plate is made of iron / aluminum material;

[0215] The light splitting film is arranged on a side of the quantum dot layer away from the light source layer, the diffusion film is arranged on a side of the light splitting film away from the quantum dot layer, and the brightness enhancement film is arranged on a side of the diffusion film away from the light splitting film.

[0216] Embodiment 8

[0217] A backlight module comprises:

[0218] The light source layer comprises a lamp plate, the lamp plate comprises an FPC substrate and an LED chip arranged on the FPC substrate, and the LED chip is packaged on the FPC substrate through a first encapsulation adhesive layer;

[0219] The second heat insulation layer is arranged on the two side surfaces of the lamp plate along the light emitting direction, and is formed by coating a high-temperature-resistant acrylic resin UV curing adhesive with a thickness of 30 μm;

[0220] The quantum dot layer is arranged on one side of the light source layer;

[0221] The first heat insulation layer is arranged on the two side surfaces of the quantum dot layer along the light emitting direction, and is formed by coating an indium tin oxide transparent heat insulation paint;

[0222] The optical film layer comprises a light splitting film, a diffusion film and a brightness enhancement film arranged in sequence along the light emitting direction, and the light splitting film is arranged on the side of the quantum dot layer away from the light source layer;

[0223] The back plate is adhered to the light source layer, the quantum dot layer and the optical film layer through a glue frame, and the back plate is made of iron / aluminum material;

[0224] The light splitting film is arranged on the side of the quantum dot layer away from the light source layer, the diffusion film is arranged on the side of the light splitting film away from the quantum dot layer, and the brightness enhancement film is arranged on the side of the diffusion film away from the light splitting film.

[0225] Example 9

[0226] A backlight module comprises:

[0227] The light source layer comprises a lamp plate, the lamp plate comprises an FPC substrate and an LED chip arranged on the FPC substrate, and the LED chip is packaged on the FPC substrate through a first encapsulation adhesive layer;

[0228] The quantum dot layer is arranged on one side of the light source layer;

[0229] The optical film layer comprises a light splitting film, a diffusion film and a brightness enhancement film arranged in sequence along the light emitting direction, and the light splitting film is arranged on the side of the quantum dot layer away from the light source layer; the diffusion film is arranged on the side of the light splitting film away from the quantum dot layer; and the brightness enhancement film is arranged on the side of the diffusion film away from the light splitting film.

[0230] The back plate is adhered to the light source layer, the quantum dot layer and the optical film layer through a glue frame, and the back plate is made of iron / aluminum material;

[0231] The heat conduction layer is arranged between the light source layer and the back plate, and the heat conduction layer is formed by coating a graphite heat conduction adhesive, and the thickness ratio of the heat conduction layer to the lamp plate is 0.2:1.

[0232] Comparative Example 1

[0233] A backlight module comprises:

[0234] The light source layer comprises a lamp plate, and the lamp plate comprises an FPC substrate and an LED chip arranged on the FPC substrate, and the LED chip is packaged on the FPC substrate by a first encapsulation adhesive layer;

[0235] The quantum dot layer is arranged on one side of the light source layer; the quantum dot layer is different from the quantum dot layer of Embodiment 1 in that TiO2 heat insulation particles are not added;

[0236] The optical film layer comprises a light splitting film, a diffusion film and a brightness enhancement film arranged in sequence along the light emission direction; the light splitting film is arranged on the side of the quantum dot layer away from the light source layer; the diffusion film is arranged on the side of the light splitting film away from the quantum dot layer; and the brightness enhancement film is arranged on the side of the diffusion film away from the light splitting film;

[0237] The back plate is glued to the light source layer, the quantum dot layer and the optical film layer by a glue frame; the back plate is made of iron / aluminum material.

[0238] Detection means:

[0239] (1) Backlight chroma chronotoxicity test:

[0240] The quantum dot layer in the embodiment and the comparative example is tested, and the quantum dot layer is lit at a rated voltage of 12V, continuously tested for half an hour, with an interval of 1s, and the change of bright chroma is measured by a color analyzer CA410 probe (Konica Minolta, CAP427H).

[0241] (2) Backlight chroma reversibility test:

[0242] The quantum dot layer in the embodiment and the comparative example is tested, and the quantum dot layer is lit at a rated voltage of 12V, continuously tested for half an hour, with an interval of 1s, and the change of bright chroma is measured by a color analyzer CA410 probe (Konica Minolta, CAP427H).

[0243] (3) DSC heat flow rate test:

[0244] The encapsulation adhesive layer mixed with the quantum dots, the heat insulation particles and the second encapsulation body is weighed, 10mg of the encapsulation adhesive layer is placed on a measuring balance, the DSC national standard test is carried out at a constant heating rate of 5-10℃ / min, the reaction temperature is raised from 25℃ to 300℃, and the size of the heat flow rate is judged according to the measured heat change.

[0245] As shown in Examples 1-3, the heat insulation material can be made of heat-insulating microparticles, silica aerogel, or micron-sized glass fiber, all of which can provide good heat insulation for the quantum dot layer. With prolonged use, the stability of the backlight color chromaticity significantly improves, indicating an improvement in the stability of the quantum dot layer. Therefore, the quantum dot layer of this application can be placed directly on the LED light panel, reducing the need for a beam splitter or diffuser film placed below the quantum dot layer and effectively thinning the backlight thickness. Furthermore, it improves the brightness and light mixing performance of the backlight module. This is because the beam splitter has a better light mixing effect the further away from the light panel, and the quantum dot layer has higher brightness the closer to the LED light panel. Directly placing the quantum dot layer on the LED light panel optimizes the light mixing effect.

[0246] A comparison of Examples 4-5 with Example 1 shows that the particle size of TiO2 heat-insulating particles is also a key factor affecting whether the RA stability of the quantum dot layer can be improved after doping. The preferred particle size of TiO2 heat-insulating particles in this application is 0.1-1 μm. As the particle size of TiO2 heat-insulating particles increases, the specific surface area of ​​TiO2 heat-insulating particles decreases, and the quantum dots adhering to their surface decrease, thereby affecting the degree of dispersion between TiO2 heat-insulating particles and quantum dots.

[0247] Based on the test results of Example 6, Comparative Example 1 and Figures 5-6, it can be seen that compared with the quantum dot layer without TiO2 heat-insulating particles, the backlight color of the quantum dot layer of this application shows a stable trend over time. This indicates that the stability of the backlight color is greatly improved over time, suggesting that the stability of the quantum dot layer has been improved.

[0248] Based on the test results of Example 6, Comparative Example 1 and Figures 7-10, it can be seen that in Comparative Example 1, without the addition of TiO2 heat-insulating particles, the tested colorimetric value continued to decrease and could not be stabilized. However, in Example 1 of this application, the stability was greatly improved with repeated lamp-lighting tests. After the addition, the colorimetric value was basically stabilized within 1‰, indicating that the RA stability of the quantum dot layer was improved.

[0249] Based on the test results of Example 6, Comparative Example 1 and Figure 11, it can be seen that in Comparative Example 1 without the addition of TiO2 heat-insulating microparticles, the heat flow rate of the second encapsulating adhesive layer of the quantum dot layer decreased significantly. This indicates that after adding TiO2 heat-insulating microparticles, the heat insulation ability of the quantum dot layer is significantly improved, the thermal stability of the quantum dot layer is higher, and the RA stability performance is better.

[0250] A comparison of Examples 7-8 with Example 6 shows that coating the quantum dot layer with a first heat insulation layer on the side of the quantum dot layer closest to the light source layer, and / or setting a second heat insulation layer on at least the side of the lamp panel closest to the quantum dot layer, further blocks heat, resulting in less heat being received by the quantum dot layer, and further increases the possibility of placing it directly on the LED lamp panel.

[0251] Compared with Embodiment 6, it can be seen from Embodiment 9 that further arranging the heat-conducting layer between the lamp plate and the back plate can realize fast heat transfer from the lamp plate to the back plate, so that the heat is dissipated from the back plate away from the lamp plate side, and the heat generated by the lamp plate can be further blocked from being transferred to the quantum dot layer.

[0252] The backlight module and the liquid crystal display provided by the embodiments of the present application are described in detail above, and the principles and implementation manners of the present application are described by using specific examples. The above description of the embodiments is only used to help understand the method of the present application and its core idea; meanwhile, for those skilled in the art, the specific implementation manners and application ranges can be changed according to the idea of the present application. In summary, the content of the description should not be understood as a limitation of the present application.

Claims

1. A backlight module, comprising: a light source layer; a quantum dot layer disposed on a light exit side of the light source layer; and / or at least one optical film layer disposed between the light source layer and the quantum dot layer and / or disposed on a side of the quantum dot layer facing away from the light source layer; at least one of the light source layer, the quantum dot layer, and the optical film layer has a thermal insulation material, the thermal insulation material has a thermal conductivity less than that of the light source layer, the quantum dot layer, or the optical film layer in which the thermal insulation material is disposed.

2. The backlight module of claim 1, wherein, The light source layer comprises: a lamp panel; a first encapsulation adhesive layer for encapsulating the lamp panel; wherein, when the thermal insulation material is disposed in the first encapsulation adhesive layer, the thermal insulation material has a thermal conductivity less than that of the light source layer.

3. The backlight module of claim 1, wherein, The quantum dot layer comprises: quantum dots; a second encapsulation adhesive layer comprising a second encapsulation body for encapsulating the quantum dots; wherein, when the thermal insulation material is disposed in the second encapsulation adhesive layer, the thermal insulation material has a thermal conductivity less than that of the quantum dot layer.

4. The backlight module of claim 1, wherein, The optical film layer comprises: a light splitting film and / or a diffusion film; a third encapsulation adhesive layer for covering a surface of the light splitting film; and / or a fourth encapsulation adhesive layer for covering a surface of the diffusion film; wherein, when the thermal insulation material is disposed in the third encapsulation adhesive layer and / or the fourth encapsulation adhesive layer, the thermal insulation material has a thermal conductivity less than that of the optical film layer.

5. The backlight module of any one of claims 1-4, wherein, The thermal insulation material comprises one or more of a thermal insulation gel, a thermal insulation fiber, or a thermal insulation particle.

6. The backlight module of claim 5, wherein, The thermal insulation particle comprises one or more of a Sn-doped In2O3 thermal insulation particle, a Sb-doped SnO2 thermal insulation particle, or a TiO2 thermal insulation particle.

7. The backlight module of any of claims 1-4, wherein, The thermal insulation material comprises a thermal insulation particle, the thermal insulation particle has a particle size in a range of greater than or equal to 0.1 μm and less than or equal to 1 μm, and the quantum dots have a particle size in a range of greater than or equal to 5 nm and less than or equal to 20 nm.

8. The backlight module of any of claims 1-4, wherein, The thermal insulation material has a visible light transmittance in a range of greater than or equal to 90% and less than 100%, and has a thermal conductivity in a range of greater than or equal to 0.001 W / (m·K) and less than or equal to 0.1 W / (m·K).

9. The backlight module of claim 1, wherein, The quantum dot layer is provided with a first thermal insulation layer on at least a surface close to the light source layer, the first thermal insulation layer has a thermal conductivity less than that of the quantum dot layer.

10. The backlight module of claim 1, wherein, The light source layer is provided with a second thermal insulation layer on at least a surface close to the quantum dot layer, the second thermal insulation layer has a thermal conductivity less than that of the light source layer.

11. The backlight module of any of claims 1-4, wherein, Further comprising a back plate for supporting the light source layer, the quantum dot layer, and the optical film layer; The back plate and the light source layer are provided with a thermal conductive layer therebetween, the thermal conductive layer has a thermal conductivity greater than that of the light source layer. 12.A liquid crystal display comprising a backlight module, the backlight module comprising: a light source layer; a quantum dot layer disposed on a light exit side of the light source layer; and / or at least one optical film layer disposed between the light source layer and the quantum dot layer and / or disposed on a side of the quantum dot layer facing away from the light source layer; At least one of the light source layer, the quantum dot layer, and the optical film layer has a thermal insulator, and the thermal conductivity of the thermal insulator is less than the thermal conductivity of the light source layer, the quantum dot layer, or the optical film layer in which the thermal insulator is located.

13. The liquid crystal display of claim 12, wherein, The light source layer comprises: a light plate; a first encapsulation adhesive layer for encapsulating the light plate; wherein, when the thermal insulator is arranged in the first encapsulation adhesive layer, the thermal conductivity of the thermal insulator is less than the thermal conductivity of the light source layer.

14. The liquid crystal display of claim 12, wherein, The quantum dot layer comprises: quantum dots; a second encapsulation adhesive layer comprising a second encapsulation body for encapsulating the quantum dots; wherein, when the thermal insulator is arranged in the second encapsulation adhesive layer, the thermal conductivity of the thermal insulator is less than the thermal conductivity of the quantum dot layer.

15. The liquid crystal display of claim 12, wherein, The optical film layer comprises: a light splitting film and / or a diffusion film; a third encapsulation adhesive layer for covering the surface of the light splitting film; and / or a fourth encapsulation adhesive layer for covering the surface of the diffusion film; wherein, when the thermal insulator is arranged in the third encapsulation adhesive layer and / or the fourth encapsulation adhesive layer, the thermal conductivity of the thermal insulator is less than the thermal conductivity of the optical film layer.

16. The liquid crystal display of claim 12, wherein, The thermal insulator comprises one or more of a thermal insulation gel, a thermal insulation fiber, or a thermal insulation particle.

17. The liquid crystal display of claim 16, wherein, The thermal insulation particle comprises one or more of a Sn-doped In2O3 thermal insulation particle, a Sb-doped SnO2 thermal insulation particle, or a TiO2 thermal insulation particle.

18. The liquid crystal display of claim 16, wherein, The thermal insulation particle has a particle size in a range of greater than or equal to 0.1 μm and less than or equal to 1 μm, and the quantum dots have a particle size in a range of greater than or equal to 5 nm and less than or equal to 20 nm.

19. The liquid crystal display of claim 12, wherein, The quantum dot layer is provided with a first thermal insulation layer on at least a surface close to the light source layer, and the thermal conductivity of the first thermal insulation layer is less than the thermal conductivity of the quantum dot layer.

20. The liquid crystal display of claim 12, wherein, The light source layer is provided with a second thermal insulation layer on at least a surface close to the quantum dot layer, and the thermal conductivity of the second thermal insulation layer is less than the thermal conductivity of the light source layer.

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