Isotope battery

Abstract

Provided is an isotope battery comprising: an isotope electrode sheet; at least one reflective sheet laminated on the isotope electrode sheet; and a waveguide connector provided between the isotope electrode sheet and the reflective sheet. Here, the isotope electrode sheet includes: a substrate; a radiation source provided in the substrate; a first conductive semiconductor layer and a second conductive semiconductor layer provided on a side of the radiation source; and a waveguide coating layer provided on the top and the bottom of the substrate.

Description

isotope battery

[0001] The present invention relates to an isotope battery.

[0002] This application claims the benefit of priority to Korean Patent Application No. 10-2024-0121841, dated September 6, 2024, and Korean Patent Application No. 10-2025-0125279, dated September 3, 2025, the entire contents of which are incorporated herein by reference.

[0003] Radiation emitted by radioactive isotopes can be absorbed through the surface of a pn junction semiconductor and converted into electrical energy. The radiation generates electron-hole pairs in the space charge region within the pn junction semiconductor, and the resulting carriers exhibit voltage-current characteristics.

[0004] The present invention provides an isotope battery capable of generating electrical energy with high energy density while efficiently utilizing a radiation source.

[0005] In order to achieve the above technical task, the present invention provides an isotope battery comprising: an isotope electrode sheet; at least one reflective sheet laminated on the isotope electrode sheet; and a waveguide connector provided between the isotope electrode sheet and the reflective sheet. Here, the isotope electrode sheet comprises: a substrate; a radiation source provided within the substrate; a first conductive semiconductor layer and a second conductive semiconductor layer provided on the side of the radiation source; and a waveguide coating layer provided on the upper and lower sides of the substrate.

[0006] In some embodiments, the isotope electrode sheet may further include an electrode sheet reflector capable of changing the direction of radiation emitted from the radiation source on the opposite side of the radiation source, with the first conductive semiconductor layer and the second conductive semiconductor layer interposed therebetween.

[0007] In some embodiments, the waveguide connector may be arranged vertically with respect to the electrode sheet reflector.

[0008] In some embodiments, the electrode sheet reflector may be configured to redirect radiation emitted from the radiation source toward the waveguide connector.

[0009] In some embodiments, the reflective sheet may include a reflective sheet substrate; a first reflector disposed vertically with the waveguide connector; and a second reflector disposed at a position where radiation reflected from the first reflector can be incident.

[0010] In some embodiments, the first reflector may be aligned vertically with the electrode sheet reflector of the isotope electrode sheet with the waveguide connector therebetween.

[0011] In some embodiments, the reflective sheet may further include a waveguide coating layer provided on the upper and lower portions of the reflective sheet substrate between the first reflector and the second reflector.

[0012] In some embodiments, the second reflector may be oriented to redirect the incident radiation toward the additional waveguide connector.

[0013] In some embodiments, the at least one reflective sheet may include two or more reflective sheets, and the reflective sheet disposed at the lowermost position among the two or more reflective sheets may include an ending reflector capable of reflecting radiation incident in an incident direction in a reflection direction opposite to the incident direction.

[0014] In some embodiments, the first conductive semiconductor layer and the second conductive semiconductor layer may be alternately provided along the direction of radiation emitted from the radiation source.

[0015] In some embodiments, the first conductive semiconductor layer and the second conductive semiconductor layer may have opposite conductive types.

[0016] In some embodiments, the first conductive semiconductor layer and the second conductive semiconductor layer may be adjacent to each other and in contact with each other.

[0017] In some embodiments, the isotope electrode sheet and the at least one reflective sheet may further include a modulator capable of adjusting the frequency of radiation emitted from the radiation source.

[0018] In some embodiments, the modulator may be configured to adjust the frequency of the radiation emitted from the radiation source so as to cause the radiation to constructively interfere with each other.

[0019] In some embodiments, the isotope electrode sheet may include a first electrode sheet reflector capable of receiving radiation emitted from the radiation source in a first direction; and a second electrode sheet reflector capable of receiving radiation emitted from the radiation source in a second direction. Here, the second direction may be opposite to the first direction.

[0020] In some embodiments, the waveguide connector may include a first waveguide connector aligned vertically with the first electrode sheet reflector; and a second waveguide connector aligned vertically with the second electrode sheet reflector.

[0021] In some embodiments, the reflective sheet may include a first reflector arranged vertically with respect to the first waveguide connector; a second reflector arranged at a position where radiation reflected from the first reflector can be incident; a third reflector arranged vertically with respect to the second waveguide connector; and a fourth reflector arranged at a position where radiation reflected from the third reflector can be incident.

[0022] In some embodiments, the second reflector and the fourth reflector may be formed integrally.

[0023] In some embodiments, the device may further include a first external electrode of a first polarity electrically connected to the isotope electrode sheet and a second external electrode of a second polarity electrically connected to the at least one reflective sheet to transmit electrical energy generated from the isotope electrode sheet and the at least one reflective sheet to an external load.

[0024] The isotope battery of the present invention has the effect of generating electric energy with high energy density while efficiently utilizing a radiation source.

[0025] The effects that can be obtained from the exemplary embodiments of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly derived and understood by those skilled in the art to which the exemplary embodiments of the present disclosure pertain from the following description. In other words, unintended effects resulting from practicing the exemplary embodiments of the present disclosure can also be derived by those skilled in the art from the exemplary embodiments of the present disclosure.

[0026] Figures 1 to 7 are conceptual cross-sectional views each showing an isotope battery according to embodiments of the present invention.

[0027] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments of the present invention may be modified in various different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. It is preferable to interpret that the embodiments of the present invention are provided to more completely explain the present invention to those of ordinary skill in the art. Like numbers refer to like elements throughout. Furthermore, various elements and areas in the drawings are schematically drawn. Therefore, the present invention is not limited by the relative sizes or spacings depicted in the accompanying drawings.

[0028] While terms like "first" and "second" may be used to describe various components, these components are not limited by these terms. These terms are used solely to distinguish one component from another. For example, a first component could be referred to as a "second component," and vice versa, without departing from the scope of the present invention.

[0029] The terminology used in this application is only used to describe specific embodiments and is not intended to limit the inventive concept. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, it should be understood that the expressions “comprises” or “has” indicate the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but do not exclude in advance the possibility of the presence or addition of one or more other features, numbers, operations, components, parts, or combinations thereof.

[0030] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention pertains. Furthermore, it is to be understood that commonly used terms, such as those defined in dictionaries, should be interpreted to have a meaning consistent with their meaning within the relevant technical context, and should not be interpreted in an overly formal sense unless explicitly defined herein.

[0031] In some embodiments, where implementations are otherwise feasible, specific process sequences may be performed in a different order than described. For example, two processes described in succession may be performed substantially simultaneously, or in a reverse order from the described order.

[0032] In the accompanying drawings, variations in the shapes depicted may be expected, for example, depending on manufacturing techniques and / or tolerances. Therefore, embodiments of the present invention should not be construed as being limited to the specific shapes of the regions depicted herein, but should include, for example, changes in shapes resulting from the manufacturing process. All terms "and / or" used herein include each and every combination of one or more of the mentioned components. In addition, the term "substrate" used herein may mean the substrate itself, or a laminated structure including the substrate and a predetermined layer or film formed on the surface thereof. In addition, the "surface of the substrate" in this specification may mean the exposed surface of the substrate itself, or the outer surface of a predetermined layer or film formed on the substrate.

[0033]

[0034] FIG. 1 is a conceptual cross-sectional view showing an isotope battery (1) according to one embodiment of the present invention.

[0035] Referring to FIG. 1, the isotope battery (1) may include an isotope electrode sheet (10) and at least one reflective sheet (20). The isotope electrode sheet (10) and the at least one reflective sheet (20) may be laminated. A waveguide connector (160) is provided between the isotope electrode sheet (10) and the at least one reflective sheet (20).

[0036] In some embodiments, the isotope electrode sheet (10) may include a substrate (100), a radiation source (200) provided within the substrate, a first conductive semiconductor layer (110) and a second conductive semiconductor layer (120) provided on the side of the radiation source (200), and a waveguide coating layer (150) provided on the upper and lower sides of the substrate (100).

[0037] The above substrate (100) may include a first surface and a second surface facing the first surface in the substrate thickness direction (T). The first surface and the second surface may be the upper main surface and the lower main surface of the substrate (100), respectively.

[0038] The above-mentioned material (100) may be an insulator or a semiconductor.

[0039] In some embodiments, the substrate (100) may include a III-V group semiconductor material. The III-V group semiconductor material may include InAlP, InGaP, InAlGaP, ZnSe, AlAs, AlAsP, or yttria-stabilized zirconia (YSZ).

[0040] In some embodiments, the substrate (100) may include a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, which may be undoped substrates.

[0041] In some other embodiments, the substrate (100) may include a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, which may be substrates doped with a dopant.

[0042] In some other embodiments, the substrate (100) may have a chemical formula of AMO3 (wherein A is at least one selected from the group consisting of La, Ba, Sr, and K, and M is at least one selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0043] Specifically, the above-described (100) is BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3 (where 0 <x<1), Ba 1-x La x SnO3 (where 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3 (where 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x and may include at least one selected from the group consisting of LaAlO3 (wherein 0 <x<1).

[0044] In some embodiments, the substrate (100) may include a non-conductive substrate. In some embodiments, the substrate (100) may include a semiconductor substrate.

[0045] The above radiation source (200) may include a radioactive isotope. The radioactive isotope is not particularly limited when it decays and emits radiation, but includes tritium ( 3 H, tritium), Calcium-45( 45 Ca), nickel-63( 63 Ni), copper-67( 67 Cu), strontium-90( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), thulium-171( 171 Tm), tantalum-182( 182 Ta), cadmium-115( 115 Cd), germanium-75( 75 Ge), cerium-141( 141 Ce), cerium-144( 144 Ce) and tungsten-185( 185 W) may include one or more selected from the group consisting of; however, the present invention is not limited thereto.

[0046] In some embodiments, the radiation source (200) may include a radioisotope that emits alpha rays. For example, the radiation source (200) may include americium-241( 241 Am), americium-243( 243 Am), polonium-209( 209 Po), polonium-210( 210 Po), plutonium-238( 238 Pu), plutonium-239( 239 Pu), curium-242( 242 Cm), curium-244( 244Cm), curium-249( 249 Cm), promethium-147( 147 Pm), uranium-238( 238 U), thorium-232( 232 Th), radium-226( 226 Ra), bismuth-210( 210 Bi), neptunium-237( 237 Np), europium-152( 152 Eu), francium-223( 223 Fr), astatine-210( 210 At), protactinium-231( 231 Pa), einsteinium-253( 253 Es), californium-252( 2520 Cf), and berkelium-249( 249 Bk) may include one or more selected from the group consisting of; however, the present invention is not limited thereto.

[0047] The above radiation source (200) can be formed by any method known to those skilled in the art. For example, the above radiation source (200) can be formed by various methods such as plating, vapor deposition, and atomic layer deposition (ALD).

[0048] In some embodiments, the radiation source (200) may be formed by plating. When the radiation source (200) is formed by plating, the radiation source (200) may be formed by forming a seed layer and then performing electrolytic plating. Alternatively, the radiation source (200) may be formed by electroless plating.

[0049] The substrate (100) may include a recess. In some embodiments, the recess may be a hole or a trench. The recess may have a shape extending inward between the major surfaces of the substrate (100). The recess may completely penetrate the substrate (100) or may partially penetrate it.

[0050] In some embodiments, the first conductive semiconductor layer (110) may be disposed so as to form an interface with the substrate (100). The first conductive semiconductor layer (110) may be disposed at least partially within the concave portion. In some embodiments, the first conductive semiconductor layer (110) may be disposed within the concave portion.

[0051] The first conductive semiconductor layer (110) may be a material having higher electrical conductivity than the substrate (100). In some embodiments, the first conductive semiconductor layer (110) may include a material having a smaller band gap than the substrate (100). In some embodiments, the first conductive semiconductor layer (110) may include a material having a band gap of about 2.7 eV or more, about 3.0 eV or more, or about 3.5 eV or more.

[0052] The radiation source (200) may be positioned within the substrate (100). In some embodiments, the radiation source (200) may be positioned apart from the interface. In some embodiments, the radiation source (200) may be positioned within the substrate (100) apart from the interface.

[0053] In some embodiments, the first conductive semiconductor layer (110) may be arranged to form an interface with the second conductive semiconductor layer (120). In some embodiments, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be arranged to be adjacent to each other.

[0054] In some embodiments, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be alternately and / or repeatedly arranged along a direction in which the first surface and the second surface extend, that is, a transverse direction (C) of the substrate that is perpendicular to the substrate thickness direction (T). For example, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may form an interface extending in the substrate thickness direction (T). The first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may form a pn junction at the interface.

[0055] In some embodiments, the first conductive semiconductor layer (110) may include a metal oxide having a band gap energy of 2.7 eV or more. In some embodiments, the metal oxide may have a chemical formula of AMO3 (wherein A is at least one selected from the group consisting of La, Ba, Sr, and K, and M is at least one selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0056] Specifically, the metal oxide is BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3 (where 0 <x<1), Ba 1-x La x SnO3 (where 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3 (where 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x and may include at least one selected from the group consisting of LaAlO3 (wherein 0 <x<1).

[0057] The above metal oxide is not only stable in high temperature and high humidity environments, but also has high carrier mobility, so it can efficiently absorb radiation emitted from a radiation source (200) and provide high energy conversion efficiency. In addition, there is no inelastic collision in the carrier movement, so there is no energy loss and it is advantageous for heat dissipation. For example, the above metal oxide is 45 cm 2 / (V·s) or more, 80 cm 2 / (V·s) or more, 120 cm 2 / (V·s) or more, further 300 cm 2 / (V·s) or higher carrier mobility can be achieved.

[0058] These metal oxides are bidirectionally doped materials and have the advantage of being able to provide high current or high voltage depending on the direction of the applied bias.

[0059] The first conductive semiconductor layer (110) may be doped with a first conductive dopant. The second conductive semiconductor layer (110) may be doped with a second conductive dopant. The first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may generate electron-hole pairs by radiation emitted from a radiation source (200).

[0060] In some embodiments, the first conductivity type dopant may be an n-type dopant and the second conductivity type dopant may be a p-type dopant. In some other embodiments, the first conductivity type dopant may be a p-type dopant and the second conductivity type dopant may be an n-type dopant. Those skilled in the art will understand that, depending on the conductivity type of the dopant doped in each region, one of the first conductivity type semiconductor layer (110) and the second conductivity type semiconductor layer (120) may operate as a cathode and the other may operate as an anode. That is, if the first conductivity type dopant is an n-type dopant and the second conductivity type dopant is a p-type dopant, the first conductivity type semiconductor layer (110) may operate as an anode and the second conductivity type semiconductor layer (120) may operate as a cathode. Conversely, if the first conductive type dopant is a p-type dopant and the second conductive type dopant is an n-type dopant, the first conductive type semiconductor layer (110) can act as a cathode and the second conductive type semiconductor layer (120) can act as an anode.

[0061] The region doped with the above n-type dopant may be, for example, a semiconductor region doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are elements of Group 15 of the periodic table, or may be a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are elements of Group 15 of the periodic table. In the present specification, a compound semiconductor means a semiconductor composed of two or more elements, and may be, for example, silicon carbide, silicon oxide, aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), or gallium nitride (GaN).

[0062] The region doped with the above p-type dopant may be, for example, a semiconductor region doped with elements of Group 13 of the periodic table, such as boron (B), aluminum (Al), gallium (Ga), or indium (In), or may be a compound semiconductor doped with elements of Group 13 of the periodic table, such as boron (B), aluminum (Al), gallium (Ga), or indium (In).

[0063] In some embodiments, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may include an organic material used in an organic layer that receives light and generates electricity in the field of solar cells, etc. For example, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may include a thiophene compound. Meanwhile, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be an organic-inorganic hybrid type by appropriately mixing the aforementioned inorganic material and organic material.

[0064] In some embodiments, a depletion region may be formed near the interface where the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) contact each other.

[0065] A reflector (115) may be placed close to the edge of the substrate (100). The reflector (115) may have substantially the same conductivity type as the first conductive semiconductor layer (110). That is, if the first conductive semiconductor layer (110) is p-type, the reflector (115) may also have p-type, and if the first conductive semiconductor layer (110) is n-type, the reflector (115) may also have n-type.

[0066] The first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be alternately and repeatedly arranged in the horizontal direction of the substrate (100). In some embodiments, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be alternately and repeatedly provided along the direction of radiation emitted from the radiation source (200). In some embodiments, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be adjacent to each other while in contact with each other. In FIG. 1, the radiation is illustrated as being electrons, but the present invention is not limited thereto. The radiation may be alpha rays, beta rays, gamma rays, photons, etc., and is not particularly limited thereto. Furthermore, the radiation may be a mixture of two or more of alpha rays, beta rays, gamma rays, and photons.

[0067] The above isotope electrode sheet (10) may further include an electrode sheet reflector (140) capable of converting the direction of radiation emitted from the radiation source (200) on the opposite side of the radiation source (200) with the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) interposed therebetween. In other words, the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120) may be alternately and repeatedly arranged in a path from the radiation source (200) to the electrode sheet reflector (140).

[0068] The above electrode sheet reflector (140) can be configured to change the direction of radiation emitted from the radiation source (200) and incident on the electrode sheet reflector (140) toward a waveguide connector (160) to be described later.

[0069] In some embodiments, the electrode sheet reflector (140) may include InAlP, InGaP, InAlGaP, ZnSe, AlAs, or AlAsP doped with a first conductive dopant. The doping concentration of the first conductive dopant in the electrode sheet reflector (140) is about 1E16 cm -3 About 5E19 cm -3 It could be.

[0070] In some other embodiments, the electrode sheet reflector (140) may include fused silica, sapphire, calcium fluoride (CaF2), magnesium fluoride (MgF2), BK7 glass, zinc selenide (ZnSe), germanium telluride (GeTe), molybdenum (Mo), or silver (Ag) doped with a first conductive dopant. Materials such as fused silica, sapphire, calcium fluoride (CaF2), magnesium fluoride (MgF2), BK7 glass, zinc selenide (ZnSe), germanium telluride (GeTe), molybdenum (Mo), and silver (Ag) may be used as materials for optical devices such as a Brewster's window. Using these materials can effectively reflect radiation emitted from a radiation source (200).

[0071] In some embodiments, the electrode sheet reflector (140) may have an inclined surface so that incident radiation can be reflected toward the waveguide connector (160).

[0072] The above-described waveguide coating layer (150) may be provided on the upper and lower portions of the substrate (100), and may prevent radiation emitted from the radiation source (200) from being emitted to the outside of the substrate (100). The radiation emitted from the radiation source (200) may have a predetermined wavelength, and the above-described waveguide coating layer (150) serves to limit radiation having the wavelength from escaping to the outside.

[0073] The above-described waveguide coating layer (150) may be made of copper, silver, aluminum, or an alloy containing one or more of these, or an inorganic material such as InP, LiNbO3, KNbO3, BaTiO3, etc., but the present invention is not limited thereto.

[0074] The above waveguide connector (160) can be arranged in a vertical direction with respect to the electrode sheet reflector (140). Here, the 'vertical direction' can mean the direction in which the isotope electrode sheet (10) and the at least one reflective sheet (20) are stacked.

[0075] The above waveguide connector (160) can serve to transmit radiation incident from an isotope electrode sheet (10) or a reflection sheet (20) to another reflection sheet (20), and can be manufactured, for example, as disclosed in JA Del Alamo et al., “Electron waveguide devices”, Superlattice and Microstructures, Vol. 23, No. 1, 1998, pp. 121-137, which is incorporated herein by reference in its entirety.

[0076] At least one reflective sheet (20) may be placed on the lower portion of the above isotope electrode sheet (10). The at least one reflective sheet (20) may include a plurality of reflective sheets (20a, 20b, . . ., 20n).

[0077] The above reflective sheet (20a) may include a reflective sheet substrate (201), a first reflector (141) arranged in a vertical alignment with the waveguide connector (160), and a second reflector (142) arranged at a position where radiation reflected from the first reflector (141) can be incident.

[0078] The above reflective sheet substrate (201) may have a configuration substantially identical to that of the above substrate (100).

[0079] The first reflector (141) may be arranged to be aligned vertically with the electrode sheet reflector (140) with the waveguide connector (160) interposed therebetween. Radiation reflected from the electrode sheet reflector (140) may pass through the waveguide connector (160) and be incident on the first reflector (141). Furthermore, radiation incident on the first reflector (141) may be reflected from the first reflector (141) toward the second reflector (142).

[0080] The first reflector (141) and the second reflector (142) may include InAlP, InGaP, InAlGaP, ZnSe, AlAs, or AlAsP doped with a first conductive dopant. The doping concentration of the first conductive dopant in the first reflector (141) and the second reflector (142) is about 1E16 cm -3 About 5E19 cm -3 It could be.

[0081] In some other embodiments, the first reflector (141) and the second reflector (142) may include fused silica, sapphire, calcium fluoride (CaF2), magnesium fluoride (MgF2), BK7 glass, zinc selenide (ZnSe), germanium telluride (GeTe), molybdenum (Mo), or silver (Ag) doped with a first conductive type dopant.

[0082] The second reflector (142) may be configured to redirect incident radiation toward an additional waveguide connector. In particular, the surface of the second reflector (142) may be oriented such that incident radiation is directed toward the additional waveguide connector.

[0083] The above reflective sheet (20a) may further include a waveguide coating layer (150) provided on the upper and lower portions of the reflective sheet substrate (201) between the first reflector (141) and the second reflector (142). The waveguide coating layer (150) may have substantially the same configuration as the waveguide coating layer (150) provided on the isotope electrode sheet (10).

[0084] Among the plurality of reflective sheets (20a, 20b, . . ., 20n), the reflective sheet (20n) positioned furthest from the isotope electrode sheet (10) may be the reflective sheet onto which the radiation emitted from the radiation source (200) is last incident. The reflective sheet (20n) may further include an ending reflector (145).

[0085] The above ending reflector (145) may be a reflector capable of reflecting radiation reflected from a reflector (141n) on one side of a reflective sheet (20n) and incident on the ending reflector (145) toward the reflector (141n).

[0086] The radiation emitted from the radiation source (200) contributes to the generation of electron-hole pairs (EHP) as it passes through the depletion region formed between the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120). However, the radiation that passes through the depletion region without contributing to the generation of EHP can contribute to the generation of EHP by being incident on the depletion region formed between the next first conductive semiconductor layer (110) and the second conductive semiconductor layer (120). Since this process is repeated as the radiation emitted from the radiation source (200) passes through the isotope electrode sheet (10) and the reflective sheet (20), the contribution of the radiation to the generation of EHP can be maximized. In particular, since radiation that does not contribute to EHP generation until reaching the final reflector sheet (20n) is reflected by the ending reflector (145) and travels in the opposite direction, it is given another opportunity to contribute to EHP generation, thereby doubling the probability of contributing to EHP generation. Therefore, the utilization efficiency of the expensive radiation source (200) can be maximized.

[0087] The isotope battery (1) illustrated in Fig. 1 can be obtained by manufacturing individual reflective sheets (20a, 20b, . . . , 20n), stacking them, and providing an isotope electrode sheet (10) thereon. By manufacturing individual reflective sheets (20a, 20b, . . . , 20n) and then stacking them, only defective reflective sheets can be selected and excluded from the stacking process, so that the manufacturing yield of the isotope battery (1) can be increased and the manufacturing cost can be reduced.

[0088] The above isotope electrode sheet (10) and at least one reflective sheet (20) can be housed within a housing (190). In addition, the above isotope electrode sheet (10) and at least one reflective sheet (20) can be electrically connected to an external load by a conductor that passes through the housing (190) and is drawn outward.

[0089] In some embodiments, the housing (190) may further include an electromagnetic interference (EMI) shield (not shown) capable of shielding electromagnetic waves. The EMI shield may be formed on at least a portion of the inner surface and / or the outer surface of the housing (190). The EMI shield may include, for example, a metal such as copper or aluminum, a conductive polymer such as polyaniline, or a magnetic material such as iron oxide. In addition, the EMI shield may be provided in the form of a sheet, mesh, coating layer, spray coating, non-woven fabric, tape, or fabric layer. By faithfully providing the EMI shield in the housing (190), the electromagnetic compatibility (EMC) of the isotope battery (1) can be secured.

[0090] The second conductive semiconductor layers (120) of the isotope electrode sheet (10) disposed at the top of Fig. 1 may be electrically connected to the first external electrode (15a) of the first polarity. In addition, the first conductive semiconductor layers (110) of the reflective sheet (20n) disposed at the bottom of Fig. 1 may be electrically connected to the second external electrode (15b) of the second polarity. The first external electrode (15a) and the second external electrode (15b) may be exposed to the outside of the housing (190) so as to be connected to an external load.

[0091]

[0092] Fig. 2 is a conceptual cross-sectional view illustrating an isotope battery (1a) according to one embodiment of the present invention. The isotope battery (1a) illustrated in Fig. 2 differs from the isotope battery (1) described with reference to Fig. 1 in that it further includes a modulator (170). Therefore, the following description will focus on these differences, and repeated explanations will be omitted.

[0093] Referring to FIG. 2, the isotope battery (1a) may further include a modulator (170). The modulator (170) may be configured to adjust the frequency (i.e., wavelength) of radiation emitted from the radiation source (200) and passing through the isotope electrode sheet (10) and at least one reflective sheet (20). That is, the modulator (170) may be a frequency modulator.

[0094] Specifically, radiation such as electrons emitted from the radiation source (200) has a predetermined wavelength according to a material wave and can perform wave motion. The modulator (170) may be configured to adjust the frequency of the radiation emitted from the radiation source (200) so that the radiation causes constructive interference with each other.

[0095]

[0096] Figure 3 is a conceptual cross-sectional view showing an isotope battery (1b) according to one embodiment of the present invention.

[0097] Referring to Fig. 3, the isotope electrode sheet (10) is the same as that described with reference to Fig. 1, so a detailed description thereof is omitted here.

[0098] The reflective sheet (20a) may have a conductive type opposite to that of the reflective sheet (20a) described with reference to FIG. 1.

[0099] The first conductive semiconductor layer (110) of the isotope electrode sheet (10) can be electrically connected to the second conductive semiconductor layer (120) of the reflective sheet (20a). The second conductive semiconductor layer (120) of the reflective sheet (20a) can be electrically connected to the first conductive semiconductor layer (110) of the reflective sheet (20b).

[0100] The second conductive semiconductor layer (120) of the isotope electrode sheet (10) can be electrically connected to the first conductive semiconductor layer (110) of the reflective sheet (20a). The first conductive semiconductor layer (110) of the reflective sheet (20a) can be electrically connected to the second conductive semiconductor layer (120) of the reflective sheet (20b).

[0101]

[0102] Figure 4 is a conceptual cross-sectional view showing an isotope battery (1c) according to one embodiment of the present invention.

[0103] Referring to FIG. 4, the isotope electrode sheet (10) may include a first electrode sheet reflector (140a) and a second electrode sheet reflector (140b).

[0104] The first electrode sheet reflector (140a) may be configured to receive radiation emitted from the radiation source (200) in a first direction. In addition, the second electrode sheet reflector (140b) may be configured to receive radiation emitted from the radiation source (200) in a second direction. Here, the second direction may be the opposite direction to the first direction.

[0105] In some embodiments, the radiation source (200) may be placed at the center of the substrate (100), the first electrode sheet reflector (140a) may be placed at one end of the substrate (100), and the second electrode sheet reflector (140b) may be placed at the other end of the substrate (100).

[0106] Between the radiation source (200) and the first electrode sheet reflector (140a), a first conductive semiconductor layer (110) and a second conductive semiconductor layer (120) may be alternately and repeatedly arranged. In addition, between the radiation source (200) and the second electrode sheet reflector (140b), a first conductive semiconductor layer (110) and a second conductive semiconductor layer (120) may be alternately and repeatedly arranged.

[0107] A first waveguide connector (160a) may be arranged at a lower portion of the first electrode sheet reflector (140a), and a second waveguide connector (160b) may be arranged at a lower portion of the second electrode sheet reflector (140b). Radiation emitted from a radiation source (200) and incident on the first electrode sheet reflector (140a) may be reflected by the first waveguide connector (160a). Radiation emitted from a radiation source (200) and incident on the second electrode sheet reflector (140b) may be reflected by the second waveguide connector (160b).

[0108] Radiation passing through the first waveguide connector (160a) and the second waveguide connector (160b) can be incident on the reflective sheet (20a).

[0109] The above reflective sheet (20a) may include a first reflector (141) arranged vertically with respect to the first waveguide connector (160a) and a second reflector (142) arranged at a position where radiation reflected from the first reflector (141) may be incident. In addition, the reflective sheet (20a) may include a third reflector (143) arranged vertically with respect to the second waveguide connector (160b) and a fourth reflector (144) arranged at a position where radiation reflected from the third reflector (143) may be incident.

[0110] Radiation incident on the reflective sheet (20a) through the first waveguide connector (160a) can be reflected by the first reflector (141) and directed toward the second reflector (142). In addition, radiation incident on the reflective sheet (20a) through the second waveguide connector (160b) can be reflected by the third reflector (143) and directed toward the fourth reflector (144). Radiation incident on the second reflector (142) and the fourth reflector (144) can be transmitted to the reflective sheet (20b) through additional waveguide connectors, respectively.

[0111] In some embodiments, the second reflector (142) and the fourth reflector (144) may be integral.

[0112] Among the plurality of reflective sheets (20a, 20b, . . ., 20n), the reflective sheet (20n) disposed furthest from the isotope electrode sheet (10) may be the reflective sheet onto which the radiation emitted from the radiation source (200) is last incident. The reflective sheet (20n) may include a first ending reflector (145a) on one side and a second ending reflector (145b) on the other side.

[0113] The first ending reflector (145a) may be a reflector capable of reflecting radiation reflected from the reflector (141na) of the reflective sheet (20n) and incident on the first ending reflector (145a) toward the reflector (141na). The second ending reflector (145b) may be a reflector capable of reflecting radiation reflected from the reflector (141nb) of the reflective sheet (20n) and incident on the second ending reflector (145b) toward the reflector (141nb).

[0114] The isotope battery (1c) of Fig. 4 can achieve higher efficiency because it can utilize all of the radiation emitted from both sides of the radiation source (200) to generate electrical energy.

[0115]

[0116] FIG. 5 is a conceptual cross-sectional view showing an isotope battery (1d) according to one embodiment of the present invention.

[0117]

[0118] The stacked isotope battery (1d) illustrated in FIG. 5 is generally the same as the stacked isotope battery (1) described with reference to FIG. 1, but differs in that a plurality of isotope electrode sheets (10) are sealed by a molding member (192) and a plurality of isotope electrode sheets (10) are mounted on a controller chip (300). Therefore, the following description will focus on these differences and omit descriptions of common parts.

[0119] Referring to FIG. 5, the plurality of isotope electrode sheets (10) are mounted on a controller chip (300). In some embodiments, the controller chip (300) may include a power management integrated circuit (PMIC) that outputs electrical energy generated from the plurality of stacked isotope electrode sheets (10) to the outside according to a predetermined rule.

[0120] The above plurality of isotope electrode sheets (10) can be molded by a molding member (192). The molding member (192) can include, for example, an epoxy molding compound (EMC).

[0121] In some embodiments, the waveguide coating layer (150) disposed on the uppermost of the plurality of isotope electrode sheets (10), as illustrated in FIG. 5, may be exposed to the outside through the molding member (192).

[0122] In another embodiment, the waveguide coating layer (150) disposed on the uppermost of the plurality of isotope electrode sheets (10) may be completely covered by the molding member (192).

[0123] The electric energy generated from the plurality of isotope electrode sheets (10) can be supplied to an external load through external terminals (310a, 310b) provided to the controller chip (300). In FIG. 5, the plurality of isotope electrode sheets (10) are illustrated as being mounted on the upper portion of the controller chip (300), but the present invention is not limited thereto. For example, the plurality of isotope electrode sheets (10) can be mounted on a package substrate. The package substrate may be a silicon substrate, a glass substrate, a printed circuit board, or the like, and the present invention is not limited thereto.

[0124]

[0125] Fig. 6 is a cross-sectional side view showing an isotope cell (1e) according to one embodiment of the present invention. The isotope cell (1e) of Fig. 6 differs from the isotope cell (1) shown in Fig. 1 in that it further includes a photon generation layer (250) around the radiation source (200), and the following description will focus on this difference.

[0126] Referring to FIG. 6, the photon generation layer (250) may be any material layer capable of emitting photons in response to radiation particles, such as alpha rays, emitted from the radiation source (200). In some embodiments, the radiation source (200) may be a material that emits alpha rays, and since such materials have been described with reference to FIG. 1, a detailed description thereof will be omitted herein.

[0127] For example, the photon generation layer (250) may employ materials such as Ba2Ca(BO3)2, BaHfO3, BaI2:Ce, BeO, BaF2, BaMgF4, Cs2LiLuCi6:Ce, K2YF5, KCaF3, YI3:Ce, etc., but is not limited thereto. Various examples of the photon generation layer (250) are disclosed at https: / scintillator.lbl.gov / inorganic-scintillator-library / .

[0128] The photon generation layer (250) can emit photons in response to alpha rays incident from the radiation source (200). The photons generated in the photon generation layer (250) can be incident on the junction region between the first conductive semiconductor layer (110) and the second conductive semiconductor layer (120), and electrical energy can be generated by the photons.

[0129] Fig. 7 is a cross-sectional side view illustrating an isotope battery (1f) according to another embodiment of the present invention. The isotope battery (1f) illustrated in Fig. 7 differs from the isotope battery (1) illustrated in Fig. 1 in that the external electrodes (15a, 15b) are further specified, and the following description focuses on these differences.

[0130] Referring to FIG. 7, the isotope battery (1f) includes a first external electrode (15a) and a second external electrode (15b) to supply electrical energy to an external load.

[0131] It includes conductors (15) extending within an insulator (164) to connect the first external electrode (15a) with the second conductive semiconductor layer (120) of the isotope electrode sheet (10). The first external electrode (15a) can be electrically connected only with the second conductive semiconductor layer (120) of the isotope electrode sheet (10).

[0132] In some embodiments, the conductors (15) may include a first conductor (15h) and a second conductor (15v) extending in different directions within the insulator (164). The second conductor (15v) may electrically connect the first conductor (15h) and the first upper electrode (132). The first conductor (15h) may be physically and / or electrically connected to the first external electrode (15a). In some embodiments, the first conductor (15h) may extend horizontally and the second conductor (15v) may extend vertically, but the present invention is not limited thereto.

[0133] The second external electrode (15b) may also be electrically connected to the reflective sheet (20n) positioned at the lowest position among the plurality of reflective sheets (20) in a similar manner to the first external electrode (15a). A person skilled in the art may envision the wiring connection between the second external electrode (15b) and the reflective sheet (20n) with reference to the wiring connection between the first external electrode (15a) and the isotope electrode sheets (10) described above.

[0134]

[0135] While the embodiments of the present invention have been described in detail above, those skilled in the art will appreciate that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention as defined in the appended claims. Therefore, modifications to future embodiments of the present invention will not depart from the scope of the invention.

Claims

1. Isotope electrode sheet; At least one reflective sheet laminated on the above isotope electrode sheet; and A waveguide connector provided between the above isotope electrode sheet and the above reflective sheet; Including, The above isotope electrode sheet: write; Radiation source provided within the above description; A first conductive semiconductor layer and a second conductive semiconductor layer provided on the side of the radiation source; and A waveguide coating layer provided on the upper and lower portions of the above-described substrate; Isotope battery containing .

2. In paragraph 1, An isotope battery characterized in that the above isotope electrode sheet further includes an electrode sheet reflector capable of changing the direction of radiation emitted from the radiation source on the opposite side of the radiation source, with the first conductive semiconductor layer and the second conductive semiconductor layer interposed therebetween.

3. In paragraph 2, An isotope battery characterized in that the above waveguide connector is arranged in a vertical direction with respect to the electrode sheet reflector.

4. In paragraph 2, An isotope battery characterized in that the electrode sheet reflector is configured to change the direction of radiation emitted from the radiation source toward the waveguide connector.

5. In paragraph 2, The above reflective sheet: Reflective sheet material; A first reflector arranged vertically with the waveguide connector; and A second reflector positioned at a position where radiation reflected from the first reflector can be incident; An isotope battery characterized by including:

6. In paragraph 5, An isotope battery characterized in that the first reflector is aligned vertically with the electrode sheet reflector of the isotope electrode sheet with the waveguide connector interposed therebetween.

7. In paragraph 5, An isotope battery characterized in that the reflective sheet further includes a waveguide coating layer provided on the upper and lower portions of the reflective sheet substrate between the first reflector and the second reflector.

8. In paragraph 5, An isotope cell characterized in that the second reflector is oriented to divert the direction of the incident radiation toward the additional waveguide connector.

9. In paragraph 5, The at least one reflective sheet includes two or more reflective sheets, An isotope battery characterized in that the reflective sheet positioned at the lowest position among the two or more reflective sheets includes an ending reflector capable of reflecting radiation incident in an incident direction in a reflection direction opposite to the incident direction.

10. In paragraph 1, An isotope battery characterized in that the first conductive semiconductor layer and the second conductive semiconductor layer are alternately provided along the direction of radiation emitted from the radiation source.

11. In paragraph 1, An isotope battery characterized in that the first conductive semiconductor layer and the second conductive semiconductor layer have opposite conductive types.

12. In paragraph 1, An isotope battery characterized in that the first conductive semiconductor layer and the second conductive semiconductor layer are adjacent to each other and in contact with each other.

13. In paragraph 1, An isotope battery further comprising a modulator capable of controlling the frequency of radiation emitted from the radiation source on the outside of the isotope electrode sheet and the at least one reflective sheet.

14. In paragraph 13, An isotope battery characterized in that the modulator is configured to adjust the frequency of the radiations emitted from the radiation source so as to cause the radiations to constructively interfere with each other.

15. In paragraph 1, The above isotope electrode sheet: A first electrode sheet reflector capable of receiving radiation emitted in a first direction from the radiation source; and A second electrode sheet reflector capable of receiving radiation emitted in a second direction from the above radiation source; Including, An isotope battery characterized in that the second direction is opposite to the first direction.

16. In paragraph 15, The above waveguide connector: A first waveguide connector aligned vertically with the first electrode sheet reflector; and A second waveguide connector aligned vertically with the second electrode sheet reflector; An isotope battery characterized by including:

17. In paragraph 16, The above reflective sheet: A first reflector arranged in a vertical direction with the first waveguide connector; A second reflector positioned at a position where radiation reflected from the first reflector can be incident; A third reflector arranged vertically with the second waveguide connector; and A fourth reflector positioned at a position where radiation reflected from the third reflector can be incident; An isotope battery characterized by including:

18. In paragraph 16, An isotope battery characterized in that the second reflector and the fourth reflector are integral.

19. In paragraph 1, An isotope battery further comprising a first external electrode of a first polarity electrically connected to the isotope electrode sheet and a second external electrode of a second polarity electrically connected to the at least one reflective sheet so as to transmit electrical energy generated from the isotope electrode sheet and the at least one reflective sheet to an external load.

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