Solar cell, photovoltaic module, photovoltaic system, electric device, and power generation device

Abstract

Provided in the present application are a solar cell, a photovoltaic module, a photovoltaic system, an electric device, and a power generation device. The solar cell comprises a matildite-type material. For the solar cell comprising the matildite-type material, the matildite-type material exhibits good thermal stability, and thus the solar cell can exhibit good device stability and deliver good photoelectric conversion efficiency during long-term operation.

Description

Solar cells, photovoltaic modules, photovoltaic systems, electrical appliances and power generation devices Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to a solar cell, a photovoltaic module, a photovoltaic system, an electrical appliance, and a power generation device. Background Technology

[0002] A solar cell is an electronic device that can directly convert light energy into electrical energy. The main working principle of a solar cell is the photovoltaic effect: when sunlight or other light sources shine on the semiconductor material of the solar cell, the energy of the photons is absorbed by the semiconductor, exciting the generation of electron-hole pairs. Under the influence of an electric field inside the semiconductor, the electrons and holes move in different directions, creating a potential difference across the device. When an external circuit is connected, an electric current is generated.

[0003] Currently, solar cells suffer from poor device stability.

[0004] Summary of the Invention

[0005] To achieve the above objectives, the first aspect of this application provides a solar cell containing a silver bismuth sulfide material. The silver bismuth sulfide material has good thermal stability, so the solar cell can have good device stability during long-term operation and provide good photoelectric conversion efficiency.

[0006] In addition, a photovoltaic module, a photovoltaic system, an electrical appliance, and a power generation device are also provided.

[0007] To achieve the above objectives, a first aspect of this application provides a solar cell comprising a silver bismuth sulfide type material.

[0008] Perovskite materials are prone to decomposition due to thermal instability, light exposure, and chemical instability, resulting in poor stability and consequently affecting the photoelectric conversion efficiency of perovskite solar cells. For example, the crystal structure of perovskite materials is easily altered, leading to decomposition and disrupting their structural integrity, thus reducing their stability. Specifically, narrow-bandgap perovskite materials generally contain tin and lead. On one hand, tin is divalent, and divalent tin ions are unstable and easily oxidized. On the other hand, the crystallization rates of tin and lead are mismatched, leading to structural instability in narrow-bandgap perovskite materials. Wide-bandgap perovskite materials, such as those with a bandgap of 1.77 eV, typically contain two different halogen elements, such as I and Br. The I and Br phases are prone to separation, further contributing to the structural instability of wide-bandgap perovskite materials.

[0009] Silver bismuth sulfide (SBLS) is a type of semiconductor material with light absorption properties and a high absorption coefficient, making it suitable for use as a photosensitive material to absorb light energy. Furthermore, due to its structure differing from perovskite materials, SBLS avoids the problems associated with perovskite materials, such as easy oxidation, mismatched crystallization rates of tin and lead, and easy separation of two different halogen phases. It also exhibits good thermal stability. Therefore, this application utilizes SBLS in solar cells. Solar cells incorporating SBLS, due to the excellent thermal stability of the SBLS material, demonstrate good device stability during long-term operation and provide high photoelectric conversion efficiency.

[0010] In some embodiments, the silver bismuth sulfide type material includes one or more of cubic rock salt phase crystal forms and hexagonal phase crystal forms.

[0011] In some embodiments, the grain size of the silver bismuth sulfide type material is ≥10nm, which can be selected as 10nm~10μm, or more preferably 10nm~500nm or 50nm~200nm.

[0012] In some embodiments, the silver bismuth sulfide type material includes one or both of polycrystalline and monocrystalline forms.

[0013] Polycrystalline materials are crystalline grains containing grain boundaries, which are the interfacial regions between different grains. Single-crystal materials, on the other hand, are crystalline structures composed of structural units arranged in a long-range ordered manner in three-dimensional space. Polycrystalline materials consist of multiple grains, which are crystalline formations composed of atoms or molecules arranged in an ordered manner. While the lattice of each grain is periodically arranged, the orientation of these grains is arbitrary. Different orientations of the grains result in grain boundaries. Single-crystal materials, due to their ordered and regular atomic arrangement with consistent atomic orientation in all directions, do not have grain boundaries.

[0014] In some embodiments, the band gap of the silver bismuth sulfide type material is 0.8 eV to 1.4 eV, optionally 0.8 eV to 1.2 eV, and more preferably 0.9 eV to 1.1 eV.

[0015] In some embodiments, the solar cell includes:

[0016] First electrode;

[0017] Second electrode;

[0018] And the silver-bismuth sulfide-type material disposed between the first electrode and the second electrode.

[0019] In some embodiments, the solar cell includes:

[0020] First electrode;

[0021] Second electrode;

[0022] And a light-absorbing layer disposed between the first electrode and the second electrode, the light-absorbing layer comprising the silver bismuth sulfide type material.

[0023] In some embodiments, the solar cell includes a thin film containing the silver bismuth sulfide type material.

[0024] In some embodiments, the thickness of the light-emitting layer or the thin film containing the silver bismuth sulfide material is 10 nm to 20 μm, optionally 10 nm to 10 μm; more preferably 30 nm to 500 nm or 50 nm to 200 nm.

[0025] In some embodiments, the solar cell further includes one or both of a first charge transport layer and a second charge transport layer;

[0026] The first charge transport layer is located between the first electrode and the light absorption layer;

[0027] The second charge transport layer is located between the second electrode and the light absorption layer;

[0028] In this configuration, one of the first charge transport layer and the second charge transport layer is an electron transport layer, and the other is a hole transport layer.

[0029] In some embodiments, the electron transport layer comprises one or more of the following materials and their derivatives, dopants, and passivated materials:

[0030] [6,6]-phenyl C61 butyrate methyl ester, fullerene C61, [6,6]-phenyl C71 butyrate methyl ester, fullerene C60, fullerene C70, tin dioxide, zinc oxide, perylene imide materials and naphthalene imide materials.

[0031] In some embodiments, the thickness of the electron transport layer is 1 nm to 300 nm, and can be selected as 1 nm to 100 nm.

[0032] In some embodiments, the hole transport layer comprises one or more of the following materials and their derivatives, dopants, and passivated materials:

[0033] Nickel oxide, molybdenum oxide, molybdenum sulfide, cuprous oxide, cuprous iodide, cuprous thiocyanate, 2,2',7,7'-tetra(N,N-p-methoxyaniline)-9,9'-spirobifluorene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, poly-3-hexylthiophene, methoxytriphenylamine-fluoroformamidinium, triphenylamine with a triphenylene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-4-anilinecarbazole-spirobifluorene, polythiophene, and self-assembled monomolecule materials.

[0034] In some embodiments, the thickness of the hole transport layer is 1 nm to 500 nm, and can be selected as 1 nm to 300 nm or 1 nm to 100 nm.

[0035] In some implementations, one or more of the following conditions are met:

[0036] (1) The solar cell further includes a first passivation layer, which is disposed on the side of the light-absorbing layer facing the first electrode. Optionally, the first passivation layer is disposed on at least a portion of the surface of the light-absorbing layer facing the first electrode.

[0037] (2) The solar cell further includes a second passivation layer, which is disposed on the side of the light-absorbing layer facing the second electrode. Optionally, the second passivation layer is disposed on at least a portion of the surface of the light-absorbing layer facing the second electrode.

[0038] The first passivation layer can be used to passivate defects on at least a portion of the surface of the light absorption layer facing the first electrode, thereby improving the stability and light absorption efficiency of the light absorption layer. The second passivation layer can be used to passivate defects on at least a portion of the surface of the light absorption layer facing the second electrode, thereby improving the stability and light absorption efficiency of the light absorption layer.

[0039] In some implementations, one or more of the following conditions are met:

[0040] (1) The solar cell includes a first passivation layer and a first charge transport layer, wherein the first passivation layer is disposed between the first charge transport layer and the light absorption layer;

[0041] (2) The solar cell includes a second passivation layer and a second charge transport layer, wherein the second passivation layer is disposed between the light absorption layer and the second charge transport layer.

[0042] In some embodiments, the thickness of the first passivation layer and the second passivation layer is independently 1 nm to 20 nm.

[0043] In some embodiments, the material in the first passivation layer and / or the second passivation layer is chemically bonded to the anionic or cationic material of the light-absorbing layer.

[0044] In some implementations, one or more of the following conditions are met:

[0045] (1) The solar cell further includes a first barrier layer, which is disposed between the first electrode and the light-absorbing layer;

[0046] (2) The solar cell further includes a second barrier layer, which is disposed between the light-absorbing layer and the second electrode;

[0047] In this process, one of the first blocking layer and the second blocking layer is an electron blocking layer, and the other is a hole blocking layer.

[0048] In some implementations, one or more of the following conditions are met:

[0049] (1) The solar cell includes a first barrier layer and a first charge transport layer, wherein the first barrier layer is disposed between the first electrode and the first charge transport layer, and / or, the first barrier layer is disposed between the first charge transport layer and the light absorption layer;

[0050] (2) The solar cell includes a second barrier layer and a second charge transport layer, wherein the second barrier layer is disposed between the second electrode and the second charge transport layer, and / or the second barrier layer is disposed between the light absorption layer and the second charge transport layer.

[0051] In some implementations, one or more of the following conditions are met:

[0052] (1) The solar cell includes a first barrier layer and a first passivation layer, wherein the first barrier layer is disposed between the first electrode and the first passivation layer;

[0053] (2) The solar cell includes a second barrier layer and a second passivation layer, wherein the second barrier layer is disposed between the second passivation layer and the second electrode.

[0054] The barrier layer is used to prevent the reverse transport of charge carriers (electrons or holes), thus avoiding carrier recombination and improving the open-circuit voltage and photoelectric conversion efficiency of the battery.

[0055] In some implementations, one or more of the following conditions are met:

[0056] (1) The LUMO energy level of the hole blocking layer material is lower than the conduction band bottom (CBM) of the light absorbing layer material, and the HOMO energy level of the hole blocking layer material is lower than the valence band top (VBM) of the light absorbing layer material; Optionally, the hole blocking layer includes one or more of 2,9-dimethyl-4,7-biphenyl-1,10-o-phenanthroline, SnO2, ZnO and cerium oxide;

[0057] (2) The LUMO energy level of the electron blocking layer material is higher than the conduction band bottom CBM of the light absorbing layer material, and the HOMO energy level of the electron blocking layer material is higher than the valence band top VBM of the light absorbing layer material; optionally, the electron blocking layer includes one or more of molybdenum oxide, vanadium oxide, LiF and Al2O3.

[0058] In some embodiments, the thickness of the first barrier layer and the second barrier layer are each independently 0.5 nm to 50 nm.

[0059] In some embodiments, the solar cell includes a first electrode, a first barrier layer, a first charge transport layer, a light absorption layer, a second charge transport layer, a second barrier layer, and a second electrode stacked together.

[0060] In some embodiments, the solar cell includes a first electrode, a first barrier layer, a first charge transport layer, a first passivation layer, a light absorption layer, a second passivation layer, a second charge transport layer, a second barrier layer, and a second electrode stacked together.

[0061] In some embodiments, the materials of the first electrode and the second electrode each independently include one or more of inorganic conductive materials, organic conductive materials, and organic-inorganic mixed conductive materials.

[0062] In some implementations, one or more of the following conditions are met:

[0063] (1) The inorganic conductive material includes one or more of carbon materials, metallic materials and their alloys, and transparent conductive metal oxides;

[0064] (2) The organic conductive material includes one or more of polyacrylic acid, polyimide, polyaniline, polythiophene, polypyrrole and their derivatives.

[0065] In some embodiments, at least one of the first electrode and the second electrode is a light-transmitting electrode.

[0066] In some embodiments, the solar cell includes a first electrode, a first charge transport layer, a light absorption layer, a second charge transport layer, and a second electrode stacked together, wherein the first electrode is a light-transmitting electrode;

[0067] in,

[0068] The first charge transport layer is an electron transport layer, and the second charge transport layer is a hole transport layer; or,

[0069] The first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer.

[0070] In some embodiments, the solar cell includes a first electrode, a first blocking layer, a hole transport layer, a light absorption layer, an electron transport layer, a second blocking layer, and a second electrode stacked together, wherein the first electrode is a light-transmitting electrode.

[0071] In some embodiments, the solar cell includes a first electrode, a first blocking layer, a hole transport layer, a first passivation layer, a light absorption layer, a second passivation layer, an electron transport layer, a second blocking layer, and a second electrode stacked together, wherein the first electrode is a light-transmitting electrode.

[0072] In some embodiments, the chemical formula of the silver bismuth sulfide type material is MX, where M is a cation and X is an anion; optionally, X includes one or more divalent anions; optionally, M includes one or more cations.

[0073] In some embodiments, the divalent anion includes one or more of divalent inorganic anions and divalent organic anions.

[0074] In some embodiments, the divalent inorganic anion includes O 2- S 2- Se 2- and Te 2- One or more of the following; optionally including S 2- .

[0075] In some embodiments, M includes one or more of metal cations and organic cations;

[0076] Optionally, the metal cation includes Ag. + Li + Na + K + 、Rb + Cs + Cu + Ni 2+ Cu2+ Zn 2+ Co 2+ Bi 3+ Ga 3+ In 3+ Sb 3+ Al 3+ 、Tl 3+ and Co 3+ One or more of the following;

[0077] Optionally, the organic cation includes at least one of organic amine ions, formamidinium ions, and imidazole ions.

[0078] In some embodiments, M includes a first cation A and a second cation B of different elemental types;

[0079] Optionally, the first cation A and the second cation B each independently comprise Ag. + Li + Na + K + 、Rb + Cs + Cu + Ni 2+ Cu 2+ Zn 2+ Co 2+ Bi 3+ Ga 3+ In 3+ Sb 3+ Al 3+ 、Tl 3+ and Co 3+ One or more of the following;

[0080] Optionally, the first cation A includes Ag. + Li + Na + K + 、Rb + and Cs + One or more of the following;

[0081] Optionally, the second cation B comprises Bi. 3+ .

[0082] In some embodiments, the silver-bismuth sulfide type material comprises chemical formula A x B y Compounds of X2, where the values ​​of x and y make A x B y The overall valence state of the X2 compound is 0.

[0083] In some embodiments, the silver bismuth sulfide type material comprises a compound with the chemical formula ABX2, wherein the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion.

[0084] In some embodiments, the silver-bismuth sulfide type material comprises chemical formula A x B y X' z X” 2-z The compound X includes divalent anions X' and X'', where z is 0 to 2.

[0085] In some embodiments, the silver-bismuth sulfide type material comprises materials with the chemical formula ABX'. z X” 2-z The compound has the first cation A being a monovalent cation, the second cation B being a trivalent cation, and X comprising divalent anions X' and X'', with z ranging from 0 to 2.

[0086] In some implementations, one or more of the following conditions are met:

[0087] (1) The divalent anion X' and the divalent anion X” have different element types;

[0088] (2) X' is S 2- z is not 0;

[0089] (3) X” is selected from O 2- Se 2- and Te 2- One or more of them.

[0090] In some embodiments, the silver-bismuth sulfide type material includes AgBiS2 and AgBiS. z O 2-z AgBiS z Se 2-z AgBiS z Te 2-z One or more of the following, where z is 0 to 2.

[0091] In a second aspect, this application provides a photovoltaic module, including the solar cell provided in the first aspect of this application.

[0092] The photovoltaic module of this application includes the solar cell provided in this application, and therefore has at least the same advantages as the solar cell.

[0093] In a third aspect, this application provides a photovoltaic system, including one or more of the solar cells provided in the first aspect and the photovoltaic modules provided in the second aspect.

[0094] The photovoltaic system of this application includes the solar cell provided in this application, and therefore has at least the same advantages as the solar cell.

[0095] In a fourth aspect, this application provides an electrical device including one or more of the solar cells provided in the first aspect and the photovoltaic modules provided in the second aspect.

[0096] The electrical device of this application includes the solar cell provided in this application, and therefore has at least the same advantages as the solar cell.

[0097] In a fifth aspect, this application provides a power generation device, including one or more of the solar cells provided in the first aspect of this application and the photovoltaic modules provided in the second aspect of this application.

[0098] The power generation device of this application includes the solar cell provided in this application, and therefore has at least the same advantages as the solar cell.

[0099] Details of one or more embodiments of this application are set forth in the following drawings and description. Other features, objects, and advantages of this application will become apparent from the specification, drawings, and claims. Attached Figure Description

[0100] To better describe and illustrate the embodiments or examples provided in this application, reference may be made to one or more accompanying drawings. Additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed applications, the currently described embodiments or examples, or the best mode of conduct of these applications as currently understood. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0101] Figure 1 is a schematic diagram of a solar cell according to an embodiment of this application.

[0102] Figure 2 is a schematic diagram of a solar cell according to another embodiment of this application.

[0103] Figure 3 is a schematic diagram of a solar cell according to another embodiment of this application.

[0104] Figure 4 is a schematic diagram of a solar cell according to another embodiment of this application.

[0105] Figure 5 is a schematic diagram of a solar cell according to another embodiment of this application.

[0106] Figure 6 is a cross-sectional schematic diagram of a solar cell divided into multiple sub-cells according to an embodiment of this application.

[0107] Figure 7 is a schematic diagram of an electrical device using a solar cell as a power source according to an embodiment of this application.

[0108] 10. Solar cell; 100. Light-absorbing layer; 210. First electrode; 220. Second electrode; 310. First charge transport layer; 320. Second charge transport layer; 410. First passivation layer; 420. Second passivation layer; 610. First barrier layer; 620. Second barrier layer; 710. First charge injection layer; 720. Second charge injection layer; 800. Substrate;

[0109] P1, P1 channel; P2, P2 channel; P3, P3 channel; 11. Active region; 12. Dead region;

[0110] 20. Electrical appliances. Detailed Implementation

[0111] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0112] The "range" disclosed in this application can be defined in the form of a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints; any endpoint can be independently included or excluded, and they can be combined arbitrarily, meaning any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60-120 and 80-110 are listed for a specific parameter, it is expected that ranges of 60-110 and 80-120 are also included. Furthermore, if minimum range values ​​1 and 2 are listed, and maximum range values ​​3, 4, and 5 are also listed, then the following ranges are all expected: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise stated, the numerical range "ab" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0-5" have been listed in this document; "0-5" is simply a shortened representation of these numerical combinations. Furthermore, stating that a parameter is an integer ≥2 is equivalent to disclosing that the parameter is, for example, an integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc. For instance, stating that a parameter is an integer selected from "2-10" is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9, and 10.

[0113] In this application, the terms "multiple" or "various" are used unless otherwise specified, referring to a quantity greater than or equal to 2. For example, "one or more" means one or more types.

[0114] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0115] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment or implementation of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments. The term "implementation" as used herein has a similar understanding.

[0116] Those skilled in the art will understand that the order in which the steps are written in the methods of various embodiments or examples does not imply a strict execution order and does not constitute any limitation on the implementation process. The detailed execution order of each step should be determined by its function and possible internal logic. Unless otherwise specified, all steps of this application may be performed sequentially or randomly, preferably sequentially. For example, if the method includes steps (a) and (b), it means that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, if the method may also include step (c), it means that step (c) can be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0117] In this application, unless otherwise specified, A (e.g., B) means that B is a non-limiting example of A, and it is understood that A is not limited to B.

[0118] In this application, "optionally," "optionally," and "optional" mean that something is optional, that is, it means that it is selected from either "with" or "without." If there are multiple "optional" entries in a technical solution, unless otherwise specified and there are no contradictions or mutual constraints, each "optional" entry shall be independent.

[0119] Perovskite materials are prone to decomposition due to thermal instability, light exposure, and chemical instability, resulting in poor stability and consequently affecting the photoelectric conversion efficiency of perovskite solar cells. For example, the crystal structure of perovskite materials is easily altered, leading to decomposition and disrupting their structural integrity, thus reducing their stability. Specifically, narrow-bandgap perovskite materials generally contain tin and lead. On one hand, tin is divalent, and divalent tin ions are unstable and easily oxidized. On the other hand, the crystallization rates of tin and lead are mismatched, leading to structural instability in narrow-bandgap perovskite materials. Wide-bandgap perovskite materials, such as those with a bandgap of 1.77 eV, typically contain two different halogen elements, such as I and Br. The I and Br phases are easily separated, contributing to the structural instability of wide-bandgap perovskite materials.

[0120] One embodiment of this application provides a solar cell comprising a silver bismuth sulfide material.

[0121] Silver bismuth sulfide (SBLS) is a type of semiconductor material with light absorption properties and a high absorption coefficient, making it suitable for photosensitive materials to absorb light energy. Due to its structure differing from perovskite materials, SBLS avoids the problems associated with perovskite, such as easy oxidation, mismatched crystallization rates of tin and lead, and easy separation of two different halogen phases. It also exhibits good thermal stability. This application utilizes SBLS in solar cells. Solar cells incorporating SBLS, due to the excellent thermal stability of the material, demonstrate good device stability during long-term operation and provide high photoelectric conversion efficiency. Furthermore, compared to crystalline silicon, SBLS offers advantages such as lower manufacturing processes and costs, and abundant raw material sources.

[0122] In some embodiments, the crystal form of the silver bismuth sulfide type material includes one or more of the cubic rock salt phase crystal form and the hexagonal phase crystal form.

[0123] Among them, the cubic rock salt phase crystal form has a crystal space group The cubic rock salt phase crystal form belongs to the cubic crystal system and is also known as the sodium chloride crystal structure.

[0124] The hexagonal crystal system has a 6-fold symmetry axis or a 6-fold inversion axis, which is the upright crystallographic axis C-axis. The other three horizontal crystallographic axes form a 120-degree angle between their positive ends. Among the axial angles α, β, and γ, α = β = 90°, and γ = 120°; among the axial lengths a, b, and c, a = b ≠ c.

[0125] In some embodiments, the silver bismuth sulfide type material includes a cubic rock salt phase crystal form; further, the silver bismuth sulfide type material is a cubic rock salt phase crystal form.

[0126] In some embodiments, the cubic rock salt phase crystal form of the silver bismuth sulfide type material may have the chemical formula MX, where M is a cation and X is an anion.

[0127] Furthermore, M may include one or more cations, and X may include one or more anions. A and X occupy the cation and anion sites of the sodium chloride crystal structure, respectively, and are arranged alternately in space to form a face-centered cubic structure.

[0128] In some embodiments, X comprises one or more divalent anions. Further, the divalent anion comprises one or more of divalent inorganic anions and divalent organic anions.

[0129] Furthermore, divalent inorganic anions include chalcogen elements, specifically O. 2- S 2- Se 2- and Te 2- One or more of the following; optionally including S 2- .

[0130] In some embodiments, M includes one or more of monovalent cations, divalent cations, and trivalent cations.

[0131] In some embodiments, M includes one or more of a metal cation and an organic cation; wherein the valence state of the metal cation and the organic cation can each be independently any one or any combination of monovalent to trivalent.

[0132] Furthermore, the metal cations include Ag. + Li + Na + K + 、Rb + Cs + Cu + Ni 2+ Cu 2+ Zn 2+ Co 2+ Bi 3+ Ga 3+ In 3+ Sb 3+ Al 3+ 、Tl 3+ and Co 3+ One or more of the following. Optionally, the metal cation includes Li. + Sodium ions (Na) + ), potassium ions (K) + ), rubidium ions (Rb + ), cesium ions (Cs) + ), silver ions (Ag) +One or more of the following. More preferably, the metal cation includes silver ions (Ag). + ).

[0133] Furthermore, organic cations may include organic amine ions, formamidinium ions (HC(NH2)2), etc. + FA + At least one of ) and imidazole ions; more preferably, the metal cation includes Li + Sodium ions (Na) + ), potassium ions (K) + ), rubidium ions (Rb + ), cesium ions (Cs) + At least one of the following. Further, the organic amine ion includes methylamine ion (CH3NH3). + MA + ), dimethyl diammonium ion (MDA) 2+ ), phenylethylammonium ion (PEA) + ), oleyl ammonium ion (OA) + ( ), at least one of ethylamine ion, propylamine ion, butylamine ion, pentamine ion and hexamine ion.

[0134] Among them, imidazole-type ions refer to those containing an imidazole group and the imidazole group being charged; as an example, it includes one or more of imidazole ions and imidazole derivative ions.

[0135] Furthermore, M includes at least two cations, namely a first cation A and a second cation B. The first cation A and the second cation B are of different elemental types.

[0136] Furthermore, the first cation A and the second cation B each independently include one or more of metal cations and organic cations, wherein the valence states of the metal cations and organic cations can be any one or any combination of monovalent to trivalent.

[0137] Furthermore, the first cation A and the second cation B each independently include metal cations, and the two cations have different element types.

[0138] Furthermore, the first cation A and the second cation B each independently include Ag. + Li + Na + K + 、Rb + Cs + Cu + Ni 2+ Cu 2+ Zn 2+ Co 2+ Bi 3+ Ga3+ In 3+ Sb 3+ Al 3+ 、Tl 3+ and Co 3+ One or more of them, and the two have different types of elements.

[0139] Optionally, the first cation A includes Ag. + Optionally, the second cation B includes Bi. 3+ .

[0140] In some embodiments, the silver bismuth sulfide type material includes material with the chemical formula A. x B y Compounds of X2. The values ​​of x and y can make A... x B y The overall valence state of the compound X2 is 0. Furthermore, the values ​​of x and y are any numbers from 0 to 4. For example, they can be 0, 0.1, 0.2, 0.3, 0.5, 0.6, 0.8, 1, 1.2, 1.4, 1.5, 1.6, 1.8, 2, 2.1, 2.5, 2.8, 3, 3.2, 3.4, 3.5, 3.6, 3.8, 4, or any two of the above point values ​​as endpoints within the range.

[0141] In some embodiments, X is a divalent anion, and the values ​​of x and y can make A x B y The overall valence state of the X2 compound is 0. Furthermore, divalent anions include O... 2- S 2- Se 2- and Te 2- One or more of them; optionally, X includes S. 2- .

[0142] In some embodiments, the first cation A is a monovalent cation; optionally, the first cation includes Ag. + Li + Na + K + 、Rb + Cs + and Cu + One or more of them.

[0143] In some embodiments, the second cation B is a trivalent cation; optionally, the second cation includes Bi. 3+ Ga 3+ In 3+ Sb 3+ Al 3+ 、Tl 3+and Co 3+ One or more of them.

[0144] In some embodiments, the silver bismuth sulfide material comprises a compound with the chemical formula ABX2, wherein the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion. Perovskite materials generally contain tin, which is divalent. Divalent tin ions are unstable and easily oxidized. Therefore, this silver bismuth sulfide material with the chemical formula ABX2 does not contain divalent cations, such as divalent tin ions, and thus it is not easily oxidized and exhibits good stability in oxidizing environments.

[0145] Furthermore, X includes one or more divalent anions.

[0146] Furthermore, if X includes divalent anions X' and X' with different elements, then the chemical formula is A. x B y The compound of X2 has the chemical formula A. x B y X' z X” 2-z , where z is 0 to 2. The value of z is any number from 0 to 2. For example, it can be 0, 0.1, 0.2, 0.3, 0.5, 0.6, 0.8, 1, 1.2, 1.4, 1.5, 1.6, 1.8, 2, or any two of the above point values ​​as endpoints.

[0147] When z is 0, the divalent anion X' does not exist; when z is 2, the divalent anion X” does not exist. When z is an intermediate value between 0 and 2 (not an extreme value), the divalent anions X' and X” are of different element types, indicating that two different divalent anions X' and X” exist simultaneously. Furthermore, X' is S 2- z is not 0. Furthermore, X” is selected from O. 2- Se 2- and Te 2- One or more of the following. Further, the chemical formula is A. x B y The compound of X2 has the chemical formula A. x B y S z X” 2-z .

[0148] As an example, the chemical formula is A x B y Compounds of X2 include, but are not limited to, A. x B y S2, A x B y S z O2-z A x B y S z Se 2-z A x B y S z Te 2-z One or more of them.

[0149] Furthermore, if the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X includes divalent anions X' and X'', then the compound with the chemical formula ABX2 has the chemical formula ABX'. z X” 2-z , where z is 0 to 2. The value of z is any number from 0 to 2. For example, it can be 0, 0.1, 0.2, 0.3, 0.5, 0.6, 0.8, 1, 1.2, 1.4, 1.5, 1.6, 1.8, 2, or any two of the above point values ​​as endpoints.

[0150] When z is 0, the divalent anion X' does not exist; when z is 2, the divalent anion X” does not exist; when z is an intermediate value between 0 and 2 (not an extreme value), it indicates that two different divalent anions X' and X” exist simultaneously. Further, X' is S 2- z is not 0. Furthermore, X” is selected from O. 2- Se 2- and Te 2- One or more of the following. Further, a compound with the chemical formula ABX2, whose chemical formula is ABS. z X” 2-z .

[0151] As an example, compounds with the chemical formula ABX2 include, but are not limited to, AgBiS2 and AgBiS. z O 2-z AgBiS z Se 2-z AgBiS z Te 2-z One or more of them.

[0152] Furthermore, taking AgBiS2 as an example, it includes one or more of cubic rock salt phase crystal forms and hexagonal phase crystal forms. Optionally, the above-mentioned solar cells include AgBiS2 with a cubic rock salt phase crystal form, which has advantages such as high absorption coefficient, suitable band gap, good charge transport performance, and good material stability.

[0153] Silver bismuth sulfide materials can be formed by methods such as hydrothermal method, solvothermal method, chemical vapor deposition (CVD), precursor pyrolysis method, and sol-gel method.

[0154] In some embodiments, the silver bismuth sulfide type material is a nanocrystal, such as quantum dots, with a particle size of 2 nm to 10 nm. However, the synthesis of nanocrystals is complex, and their surfaces contain a large number of surface traps, resulting in low carrier transport rates and severe recombination, which restricts charge extraction efficiency.

[0155] In some embodiments, the grain size of the silver bismuth sulfide type material is ≥10nm, and can be selected from 10nm to 10μm. Examples include 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1μm, 2μm, 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, 9μm, 10μm, or any two of the above values ​​as end values.

[0156] Furthermore, the grain size of the silver bismuth sulfide type material is 10 nm to 5 μm, or 500 nm to 5 μm. Optionally, the grain size of the silver bismuth sulfide type material is 10 nm to 1 μm, or 500 nm to 1 μm. The large grain size and small grain boundaries of the silver bismuth sulfide type material can reduce the nonradiative recombination of electrons and holes at the grain boundaries.

[0157] Furthermore, the grain size of the silver bismuth sulfide type material is 1 μm to 10 μm. Optionally, the grain size of the silver bismuth sulfide type material is 5 μm to 10 μm, or 1 μm to 5 μm, or 4 μm to 6 μm.

[0158] Further, the grain size of the silver bismuth sulfide type material is 10 nm to 500 nm, or 50 nm to 500 nm. Optionally, the grain size of the silver bismuth sulfide type material is 10 nm to 400 nm, or 50 nm to 400 nm. Optionally, the grain size of the silver bismuth sulfide type material is 10 nm to 200 nm, or 50 nm to 200 nm. Optionally, the grain size of the silver bismuth sulfide type material is 10 nm to 100 nm, or 50 nm to 100 nm, or 10 nm to 50 nm, or 50 nm to 90 nm, or 60 nm to 90 nm, or 60 nm to 80 nm, or 60 nm to 70 nm, or 50 nm to 60 nm, or 20 nm to 50 nm, or 20 nm to 40 nm, or 20 nm to 35 nm, or 25 nm to 35 nm.

[0159] In some embodiments, the crystal structure of the silver bismuth sulfide type material includes one or both of polycrystalline and single-crystal structures. Polycrystalline refers to crystal grains with grain boundaries, which are the interface regions between different grains in a polycrystalline material. Single-crystal refers to a crystal composed of structural units arranged in a long-range ordered manner in three-dimensional space. Polycrystalline refers to a material composed of multiple grains, which are crystalline bodies formed by the ordered arrangement of atoms or molecules. The lattice of each grain is periodically arranged, but the orientation of these grains is arbitrary. Different orientations of grains result in grain boundaries between crystal grains. Single-crystal crystals, due to their ordered and regular internal atomic arrangement, with consistent atomic arrangement in all directions, do not have grain boundaries.

[0160] In other words, silver bismuth sulfide materials include one or both of polycrystalline silver bismuth sulfide materials and monocrystalline silver bismuth sulfide materials.

[0161] In some embodiments, the band gap of the silver bismuth sulfide material is 0.8 eV to 1.4 eV, optionally 0.8 eV to 1.2 eV, and more preferably 0.9 eV to 1.1 eV. As an example, the band gap of the silver bismuth sulfide material can be 0.8 eV, 0.9 eV, 1 eV, 1.1 eV, 1.2 eV, 1.3 eV, 1.4 eV, or any two of the above values ​​as endpoints. With a band gap within the above range, the silver bismuth sulfide material can serve as a good narrow band gap light-absorbing material, possessing advantages such as high absorption coefficient, suitable band gap, good charge transport performance, and good material stability. Its thin film can achieve high current density within a relatively small thickness range.

[0162] For example, in some embodiments, the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion, then the chemical formula is A. x B y The compound of X2 has the chemical formula ABX2. Therefore, this silver-bismuth sulfide material with the chemical formula ABX2 does not contain divalent cations, such as divalent tin ions. Consequently, it is not easily oxidized, exhibits good stability in oxidizing environments, and does not suffer from the problem of mismatched crystallization rates between tin and lead.

[0163] In some embodiments of this application, the solar cell includes a thin film containing a silver bismuth sulfide type material. Further, the thin film containing the silver bismuth sulfide type material serves as a light-absorbing layer in the solar cell. In other words, the solar cell includes a light-absorbing layer, and further, the light-absorbing layer includes a silver bismuth sulfide type material; further still, the light-absorbing layer includes a thin film containing the silver bismuth sulfide type material.

[0164] As used in this application, the term "layer" refers to any substantially layered structure. A layer may have a thickness that varies over its length. Typically, the thickness of a layer is approximately constant. The "thickness" of a layer as used in this application refers to the average thickness of the layer. The thickness of a layer can be measured using methods conventional in the art. For example, it can be measured using a Zygo NewView 9000 white light interferometer.

[0165] Furthermore, the solar cell includes a silver bismuth sulfide thin film, wherein the silver bismuth sulfide thin film is a thin film containing the silver bismuth sulfide type material.

[0166] In some embodiments, the thickness of the thin film or light-absorbing layer containing the silver bismuth sulfide type material is 10 nm to 20 μm. Examples include 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 200 nm, and 250 nm. The range is defined by nm, 300nm, 350nm, 400nm, 450nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1μm, 2μm, 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, 9μm, 10μm, 11μm, 12μm, 13μm, 14μm, 15μm, 16μm, 17μm, 18μm, 19μm, 20μm, or any two of the above point values ​​as endpoints.

[0167] Furthermore, the thickness of the thin film or light-absorbing layer containing the silver bismuth sulfide material can be 10 nm to 10 μm or 500 nm to 10 μm. Optionally, the thickness of the thin film or light-absorbing layer containing the silver bismuth sulfide material can be 10 nm to 5 μm or 500 nm to 5 μm.

[0168] Furthermore, the thickness of the film or light-absorbing layer containing the silver bismuth sulfide type material is 1 μm to 20 μm. Optionally, the thickness of the film or light-absorbing layer containing the silver bismuth sulfide type material is 5 μm to 20 μm.

[0169] Further, the thickness of the thin film or light-absorbing layer containing the silver bismuth sulfide type material is 10 nm to 1000 nm, or 50 nm to 1000 nm. Optionally, the thickness of the thin film or light-absorbing layer containing the silver bismuth sulfide type material is 10 nm to 800 nm, or 50 nm to 800 nm. Optionally, the thickness of the thin film or light-absorbing layer containing the silver bismuth sulfide type material is 10 nm to 500 nm, 50 nm to 400 nm, or 20 nm to 500 nm. Optionally, the thickness of the thin film or light-absorbing layer containing the silver bismuth sulfide type material is 20 nm to 200 nm, 50 nm to 200 nm, or 100 nm to 200 nm, or 20 nm to 60 nm, or 30 nm to 60 nm, or 30 nm to 50 nm.

[0170] Silver bismuth sulfide type materials have a high light absorption coefficient, and high current density can be achieved in thin films with a small thickness range.

[0171] In some embodiments, the solar cell includes a first electrode, a second electrode, and a silver-bismuth sulfide material disposed between the first electrode and the second electrode.

[0172] In some embodiments, the solar cell includes a first electrode, a second electrode, and a thin film containing a silver bismuth sulfide-type material disposed between the first electrode and the second electrode.

[0173] Furthermore, thin films containing silver bismuth sulfide materials can serve as light-absorbing layers in solar cells.

[0174] In some embodiments, at least one of the first and second electrodes is a light-transmitting electrode. Further, only one of the first and second electrodes is a light-transmitting electrode, serving as the incident side for sunlight. Further still, both the first and second electrodes are light-transmitting electrodes, and both electrodes can serve as the incident side for solar energy. If solar light can be incident from both sides, it is beneficial to increase the intensity of sunlight received by the solar cell.

[0175] Here, a light-transmitting electrode refers to an electrode that is transparent to visible light. Further, the light-transmitting electrode has a visible light transmittance ≥50%, which can be selected as ≥60%, ≥70%, ≥80%, or ≥90%. As an example, the visible light transmittance of the light-transmitting electrode can be 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 100%, or within a range formed by any two of the above values ​​as endpoints. Further, the visible light transmittance of the light-transmitting electrode can be 50%–100%, which can be selected as 60%–80%, 80%–100%, or 80%–95%.

[0176] In some embodiments, the solar cell further includes one or both of a first charge transport layer and a second charge transport layer;

[0177] The first charge transport layer is located between the first electrode and the light absorption layer;

[0178] The second charge transport layer is located between the second electrode and the light absorption layer;

[0179] Among them, one of the first charge transport layer and the second charge transport layer is an electron transport layer, and the other is a hole transport layer.

[0180] In other words, in some embodiments, the solar cell includes a first electrode, an optional first charge transport layer, a light-absorbing layer, an optional second charge transport layer, and a second electrode stacked together. Further, the first electrode is formed on a substrate; that is, the substrate is located on the side of the first electrode opposite to the light-absorbing layer, and the same applies below.

[0181] Please refer to Figure 1. As an example, the solar cell 10 includes a first electrode 210, a first charge transport layer 310, a light absorption layer 100, a second charge transport layer 320, and a second electrode 220 stacked together.

[0182] Furthermore, the solar cell also includes a substrate, on which the first electrode is disposed. The substrate can be made of glass, thus forming a transparent conductive glass with the first electrode material. Examples of transparent conductive glasses include FTO (fluorine-doped tin oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), and IZO (indium zinc oxide).

[0183] Please refer to Figure 1. As an example, the solar cell 10 includes a substrate 800, a first electrode 210, a first charge transport layer 310, a light absorption layer 100, a second charge transport layer 320, and a second electrode 220 stacked together.

[0184] Understandably, solar cells can include formal and inverted structures in terms of their structure.

[0185] Furthermore, the first electrode is a light-transmitting electrode. The formal structure of the solar cell is as follows: the solar cell includes a first electrode, an electron transport layer, a light absorption layer, a hole transport layer, and a second electrode stacked in sequence.

[0186] As an example of a formal structure of a solar cell, please refer to Figure 1. The solar cell 10 includes a substrate 800, a first electrode 210, a first charge transport layer 310, a light absorption layer 100, a second charge transport layer 320, and a second electrode 220 stacked together. At this time, the substrate 800 and the first electrode 210 are both light-transmitting materials, the first charge transport layer 310 is an electron transport layer, and the second charge transport layer 320 is a hole transport layer.

[0187] Furthermore, the first electrode is a light-transmitting electrode. The inverted structure of the solar cell is as follows: the solar cell includes a first electrode, a hole transport layer, a light absorption layer, an electron transport layer, and a second electrode stacked sequentially. Since the first electrode is a light-transmitting electrode, it serves as the solar radiation incident side. In the inverted structure, the layer located near the solar radiation incident side of the light absorption layer is the hole transport layer. Therefore, the side of the light absorption layer near the hole transport layer generates more holes due to the photovoltaic effect, resulting in a higher hole concentration in the hole transport layer. Moreover, since the hole transport rate is slower than the electron transport rate, placing the hole transport layer near the solar radiation incident side means that the holes generated on the side of the light absorption layer near the hole transport layer do not need to traverse the entire light absorption layer, shortening the transport path and thus improving the hole collection rate. In addition, since the hole transport rate is slower than the electron transport rate, the inverted structure helps improve the rate matching between the hole and electron transport rates.

[0188] As an example of the inverted structure of a solar cell, please refer to Figure 1. The solar cell 10 includes a substrate 800, a first electrode 210, a first charge transport layer 310, a light absorption layer 100, a second charge transport layer 320, and a second electrode 220 stacked together. In this case, the substrate 800 and the first electrode 210 are both light-transmitting materials, the first charge transport layer 310 is a hole transport layer, and the second charge transport layer 320 is an electron transport layer.

[0189] In some embodiments, the electron transport layer comprises one or more of the following materials and their derivatives, dopants, and passivated materials:

[0190] [6,6]-phenyl C61 butyrate methyl ester, [6,6]-phenyl C71 butyrate methyl ester, fullerene C61, fullerene C60, fullerene C70, tin dioxide, zinc oxide, perylene imide materials and naphthalene imide materials.

[0191] Furthermore, the thickness of the electron transport layer is 1 nm to 300 nm. For example, it can be 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 150 nm, 160 nm, 180 nm, 200 nm, 210 nm, 220 nm, 250 nm, 260 nm, 280 nm, 300 nm, or any two of the above values ​​as endpoints. Further, the thickness of the electron transport layer is 1 nm to 100 nm; further, it can be 5 nm to 100 nm; further, it can be 1 nm to 50 nm.

[0192] In some embodiments, the hole transport layer comprises one or more of the following materials and their derivatives, dopants, and passivated materials:

[0193] Nickel oxide, molybdenum oxide, molybdenum sulfide, cuprous oxide, cuprous iodide, cuprous thiocyanate, 2,2',7,7'-tetra(N,N-p-methoxyaniline)-9,9'-spirobifluorene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, poly-3-hexylthiophene, methoxytriphenylamine-fluoroformamidinium, triphenylamine with a triphenylene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-4-anilinecarbazole-spirobifluorene, polythiophene, and self-assembled monomolecule materials.

[0194] In some embodiments, the self-assembled monomolecular material satisfies the structure shown in the following general formula: QLA, wherein Q is selected from substituted or unsubstituted carbazole or triphenylamine groups, L is selected from substituted or unsubstituted alkylene chains, and A is selected from oxyacid groups.

[0195] In some embodiments, in the self-assembled monomolecule material, the substituents of the substituted or unsubstituted carbazole or triphenylamine group include any one of the following: halogen groups, alkoxy groups, oxyacid groups, substituted or unsubstituted aromatic groups with 6 to 15 cyclic atoms, substituted or unsubstituted heteroaromatic groups with 5 to 15 cyclic atoms, and substituted or unsubstituted alkyl groups with 1 to 5 carbon atoms. In this application, the structure of the substituents of the substituted or unsubstituted carbazole or triphenylamine group allows the organic compound to have energy levels more compatible with perovskite materials, further improving the performance of solar cells when used in the fabrication of hole transport layers.

[0196] In some embodiments, the substituted or unsubstituted alkylene chains in the self-assembled monomolecule material include any one of the following: alkylene chains with 2 to 11 carbon atoms substituted or unsubstituted by halogen groups, alkoxy groups, oxyacid groups, aromatic groups with 6 to 15 cyclic atoms, or heteroaromatic groups with 5 to 15 cyclic atoms. By controlling the number of carbon atoms in L and its substituents, the steric hindrance of the organic compound is reduced while its hydrophobicity is improved, further enhancing the photoelectric conversion efficiency and stability of the solar cell.

[0197] In some embodiments, in the self-assembled monomolecule material, the oxyacid group is selected from any one of phosphonic acid group, hypophosphite group, sulfonic acid group, carboxylic acid group, sulfinic acid group, boric acid group or silicate group.

[0198] In some embodiments, the halogen group includes any one of F, Cl, Br, and I.

[0199] In some embodiments, the heteroatoms in the heteroaromatic group are selected from at least one of N, O, and S, so that the organic compound has an energy level that is more compatible with commonly used metal oxide hole transport materials and perovskite materials, thereby further improving the performance of solar cells when applied to the preparation of passivation films for solar cells.

[0200] In some embodiments, the alkoxy group is typically represented by RO-, such as methoxy CH3O-, ethoxy C2H5O-, propoxy C3H7O-, etc.

[0201] In some embodiments, the self-assembled monomolecular material includes [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz), [4-(9H-carbazole-9-yl)butyl]phosphonic acid (4PACz), and [4-(3,6-dibromo-9H-carbazole-9-yl)butyl]phosphonic acid (Br At least one of the following is selected: [MeO-2PACz], [Me-2PACz], [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), and [2-(3,6-dibromo-9H-carbazole-9-yl)ethyl]phosphonic acid (Br-2PACz). The self-assembled monomolecule material selected from the above materials exhibits good hole transport efficiency and good energy level matching with the perovskite layer, which is beneficial for improving the photoelectric conversion efficiency of perovskite solar cells.

[0202] Furthermore, the thickness of the hole transport layer is 1nm to 500nm. For example, it can be 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 8nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 150nm, 160nm, 180nm, 200nm, 210nm, 220nm, 250nm, 260nm, 280nm, 300nm, 320nm, 350nm, 360nm, 380nm, 400nm, 440nm, 480nm, 500nm, or any two of the above values ​​as endpoints. Furthermore, the thickness of the hole transport layer is 1nm to 300nm, further 1nm to 100nm, further 5nm to 100nm, and further 1nm to 50nm.

[0203] In some embodiments, the solar cell further includes a first passivation layer disposed on the side of the light-absorbing layer facing the first electrode. Optionally, the first passivation layer is disposed on at least a portion of the surface of the light-absorbing layer facing the first electrode. The first passivation layer can be used to passivate defects on at least a portion of the surface of the light-absorbing layer facing the first electrode, thereby improving the stability and light absorption efficiency of the light-absorbing layer.

[0204] Furthermore, the first passivation layer is disposed on part or all of the surface of the light-absorbing layer facing the first electrode.

[0205] In some embodiments, the solar cell further includes a second passivation layer disposed on the side of the light-absorbing layer facing the second electrode. Optionally, the second passivation layer is disposed on at least a portion of the surface of the light-absorbing layer facing the second electrode. The second passivation layer can be used to passivate defects on at least a portion of the surface of the light-absorbing layer facing the second electrode, thereby improving the stability and light absorption efficiency of the light-absorbing layer. Further, the second passivation layer is disposed on part or all of the surface of the light-absorbing layer facing the second electrode.

[0206] In some embodiments, the materials of the first passivation layer and the second passivation layer are materials used to passivate the light-absorbing layer, and the materials of the first passivation layer and / or the second passivation layer are chemically bonded to the anions or cations of the absorber layer material. The bulk structure of the light-absorbing layer material crystal may produce anion or cation defects. The materials of the first passivation layer and / or the second passivation layer can chemically bond to the anions or cations at the defect sites, thereby passivating the defects, reducing nonradiative recombination of charge carriers, and improving the conversion efficiency of the solar cell. Furthermore, the materials of the first passivation layer and the second passivation layer can be used, but are not limited to, to passivate cation or anion sites in silver bismuth sulfide type materials, especially divalent anion sites, such as S...2- Defects at sites of oxalic elements are passivated.

[0207] In some embodiments, the solar cell includes a first passivation layer and a first charge transport layer, wherein the first passivation layer is disposed between the first charge transport layer and the light absorption layer.

[0208] In some embodiments, the solar cell includes a second passivation layer and a second charge transport layer, the second passivation layer being disposed between the light-absorbing layer and the second charge transport layer.

[0209] In some embodiments, the thickness of the first passivation layer and the second passivation layer are each independently 1nm to 20nm. For example, it can be 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 8nm, 10nm, 12nm, 15nm, 16nm, 20nm, 25nm, or any two of the above point values ​​as end values.

[0210] In some embodiments, the solar cell includes a first electrode, an optional first passivation layer, a light-absorbing layer, an optional second passivation layer, and a second electrode stacked together. Further, the first electrode is formed on a substrate.

[0211] Referring to Figure 2, as an example, the solar cell 10 includes a first electrode 210, a first passivation layer 410, a light-absorbing layer 100, a second passivation layer 420, and a second electrode 220 stacked together. As an example, the solar cell 10 includes a substrate 800, a first electrode 210, a first passivation layer 410, a light-absorbing layer 100, a second passivation layer 420, and a second electrode 220 stacked together.

[0212] In some embodiments, the solar cell includes a first electrode, an optional first charge transport layer, an optional first passivation layer, a light-absorbing layer, an optional second passivation layer, an optional second charge transport layer, and a second electrode stacked together. Further, the first electrode is formed on a substrate.

[0213] Referring to Figure 3, as an example, the solar cell 10 includes a first electrode 210, a first charge transport layer 310, a first passivation layer 410, a light absorption layer 100, a second passivation layer 420, a second charge transport layer 320, and a second electrode 220 stacked together. As an example, the solar cell includes a substrate 800, a first electrode 210, a first charge transport layer 310, a first passivation layer 410, a light absorption layer 100, a second passivation layer 420, a second charge transport layer 320, and a second electrode 220 stacked together.

[0214] In some embodiments, the solar cell includes a first electrode, an optional first charge transport layer, a light-absorbing layer, an optional second charge transport layer, and a second electrode stacked together. Further, the first electrode is formed on a substrate.

[0215] In some embodiments, the solar cell includes a first electrode, an optional first charge transport layer, an optional first passivation layer, a light-absorbing layer, an optional second passivation layer, an optional second charge transport layer, and a second electrode stacked together. Further, the first electrode is formed on a substrate.

[0216] As an example, a solar cell includes a first electrode, a first charge transport layer, a first passivation layer, a light absorption layer, a second passivation layer, a second charge transport layer, and a second electrode stacked together.

[0217] In some embodiments, the solar cell further includes a first barrier layer disposed between the first electrode and the light-absorbing layer.

[0218] Understandably, the barrier layer in this application is used to prevent the reverse transport of charge carriers (electrons or holes), thereby avoiding the recombination of charge carriers and improving the open-circuit voltage and photoelectric conversion efficiency of the battery.

[0219] In some embodiments, the solar cell includes a first barrier layer and the aforementioned first charge transport layer. Further, the first barrier layer is disposed between the first electrode and the first charge transport layer (as shown in FIG. 4), and / or, the first barrier layer is disposed between the first charge transport layer and the light-absorbing layer (not shown). Understandably, the first barrier layer may be disposed between the first electrode and the first charge transport layer, or between the first charge transport layer and the first light-absorbing layer, or both.

[0220] Furthermore, if the first charge transport layer described above is an electron transport layer, then the first blocking layer is a hole blocking layer. The function of the hole blocking layer is to transport electrons and block holes, thereby reducing the recombination of electrons and holes and improving the open-circuit voltage and photoelectric conversion efficiency of the battery. Further, if the first charge transport layer described above is a hole transport layer, then the first blocking layer is an electron blocking layer. The function of the electron blocking layer is to transport holes and block electrons, thereby reducing the recombination of electrons and holes and improving the open-circuit voltage and photoelectric conversion efficiency of the battery.

[0221] In some embodiments, the solar cell further includes a second barrier layer disposed between the light-absorbing layer and the second electrode.

[0222] In some embodiments, the solar cell includes a second barrier layer and the aforementioned second charge transport layer. Further, the second barrier layer is disposed between the second charge transport layer and the second electrode (as shown in FIG. 4), and / or, the second barrier layer is disposed between the light-absorbing layer and the second charge transport layer (not shown). Understandably, the second barrier layer may be disposed between the second charge transport layer and the second electrode, or between the light-absorbing layer and the second charge transport layer, or both.

[0223] Furthermore, if the second charge transport layer described above is an electron transport layer, then the second blocking layer is a hole blocking layer. The function of the hole blocking layer is to transport electrons and block holes, thereby reducing the recombination of electrons and holes and improving the open-circuit voltage and photoelectric conversion efficiency of the battery. Further, if the second charge transport layer described above is a hole transport layer, then the second blocking layer is an electron blocking layer. The function of the electron blocking layer is to transport holes and block electrons, thereby reducing the recombination of electrons and holes and improving the open-circuit voltage and photoelectric conversion efficiency of the battery.

[0224] Furthermore, one of the first and second blocking layers is an electron blocking layer and the other is a hole blocking layer.

[0225] Furthermore, the LUMO level (lowest unoccupied molecular orbital) of the hole blocking layer material is lower than the conduction band bottom (CBM) of the light absorbing layer material, and the HOMO level (highest occupied molecular orbital) of the hole blocking layer material is lower than the valence band top (VBM) of the light absorbing layer material.

[0226] In this application, both the LUMO and HOMO energy levels of the material can be measured by ultraviolet photoelectron spectroscopy (UPS).

[0227] Furthermore, the hole blocking layer may be made of one or more of the following materials: 2,9-dimethyl-4,7-biphenyl-1,10-o-phenanthroline, SnO2, ZnO and cerium oxide (CeOx), where x is 0 to 2 and may be any value within that range.

[0228] Furthermore, the thickness of the hole blocking layer is 0.5nm to 50nm, or more specifically 1nm to 50nm, 0.5nm to 20nm, or 1nm to 20nm. For example, it can be 0.5nm, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 8nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, or any two of the above values ​​as endpoints.

[0229] Furthermore, the LUMO energy level of the electron blocking layer material is higher than the conduction band bottom (CBM) of the light absorbing layer material, and the HOMO energy level of the electron blocking layer material is higher than the valence band top (VBM) of the light absorbing layer material.

[0230] Further, the electron blocking layer includes, but is not limited to, one or more of molybdenum oxide, vanadium oxide, LiF, and Al2O3. Optionally, the electron blocking layer includes Al2O3. Further, the thickness of the electron blocking layer is 0.5 nm to 50 nm, more specifically 1 nm to 50 nm, 0.5 nm to 20 nm, or 1 nm to 20 nm. As an example, it can be 0.5 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 8 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or any two of the above values ​​as endpoints.

[0231] Furthermore, the thickness of the first barrier layer and the second barrier layer may be the same or different, and each may independently range from 0.5nm to 50nm. For example, it may be 0.5nm, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 8nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, or any two of the above values ​​as endpoints.

[0232] In some embodiments, the solar cell includes a first barrier layer and a first passivation layer, the first barrier layer being disposed between a first electrode and the first passivation layer. Further, the solar cell also includes a first charge transport layer, the first barrier layer being disposed between the first electrode and the first charge transport layer, and / or, the first barrier layer being disposed between the first charge transport layer and the light-absorbing layer; the first passivation layer is located between the first charge transport layer and the light-absorbing layer.

[0233] In some embodiments, the solar cell includes a second barrier layer and a second passivation layer, the second barrier layer being disposed between the second passivation layer and the second electrode. Further, the solar cell also includes a second charge transport layer, the second barrier layer being disposed between the second charge transport layer and the second electrode, and / or, the second barrier layer being disposed between the light-absorbing layer and the second charge transport layer; the second passivation layer is located between the light-absorbing layer and the second charge transport layer.

[0234] In some embodiments, the solar cell includes a first electrode, an optional first barrier layer, an optional first charge transport layer, a light-absorbing layer, an optional second charge transport layer, an optional second barrier layer, and a second electrode stacked together. Further, the first electrode is formed on a substrate.

[0235] Referring to Figure 4, as an example, the solar cell 10 includes a first electrode 210, a first barrier layer 610, a first charge transport layer 310, a light absorption layer 100, a second charge transport layer 320, a second barrier layer 620, and a second electrode 220 stacked together. Further, the solar cell includes a substrate 800, a first electrode 210, a first barrier layer 610, a first charge transport layer 310, a light absorption layer 100, a second charge transport layer 320, a second barrier layer 620, and a second electrode 220 stacked together. Further, the first charge transport layer 310 is a hole transport layer, and the second charge transport layer 320 is an electron transport layer.

[0236] In some embodiments, the solar cell includes a first electrode, an optional first charge transport layer, an optional first blocking layer, a light-absorbing layer, an optional second blocking layer, an optional second charge transport layer, and a second electrode stacked together. Further, the first electrode is formed on a substrate.

[0237] As an example, a solar cell includes a first electrode, a first charge transport layer, a first blocking layer, a light-absorbing layer, a second blocking layer, a second charge transport layer, and a second electrode stacked together.

[0238] In some embodiments, the solar cell includes a first electrode, an optional first barrier layer, an optional first charge transport layer, an optional first barrier layer, a light-absorbing layer, an optional second barrier layer, an optional second charge transport layer, an optional second barrier layer, and a second electrode, all stacked together. Further, the first electrode is formed on a substrate.

[0239] As an example, a solar cell includes a first electrode, a first barrier layer, a first charge transport layer, a light absorption layer, a second barrier layer, a second charge transport layer, a second barrier layer, and a second electrode stacked together.

[0240] In some embodiments, the solar cell includes a first electrode, an optional first barrier layer, an optional first charge transport layer, an optional first passivation layer, a light-absorbing layer, an optional second passivation layer, an optional second charge transport layer, an optional second barrier layer, and a second electrode, all stacked together. Further, the first electrode is formed on a substrate.

[0241] As an example, a solar cell includes a first electrode, a first barrier layer, a first charge transport layer, a first passivation layer, a light-absorbing layer, a second passivation layer, a second charge transport layer, a second barrier layer, and a second electrode, all stacked together. Further, the first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer.

[0242] In some embodiments, the solar cell includes a first electrode, an optional first charge transport layer, an optional first barrier layer, an optional first passivation layer, a light-absorbing layer, an optional second passivation layer, an optional second barrier layer, an optional second charge transport layer, an optional second barrier layer, and a second electrode, all stacked together. Further, the first electrode is formed on a substrate.

[0243] As an example, a solar cell includes a first electrode, a first charge transport layer, a first barrier layer, a first passivation layer, a light absorption layer, a second passivation layer, a second barrier layer, a second charge transport layer, a second barrier layer, and a second electrode, which are stacked together.

[0244] In some embodiments, the solar cell further includes a first charge injection layer and a first charge transport layer, wherein the first charge injection layer is disposed between the first electrode and the first charge transport layer.

[0245] In some embodiments, the solar cell further includes a second charge injection layer and a second charge transport layer, the second charge injection layer being disposed between the second electrode and the second charge transport layer.

[0246] In the first charge injection layer and the second charge injection layer, one is an electron injection layer and the other is a hole injection layer. If the first charge transport layer is an electron transport layer, then the first charge injection layer is also an electron injection layer. The electron injection layer facilitates the efficient injection of electrons from the electrodes into the electron transport layer. If the first charge transport layer is a hole transport layer, then the first charge injection layer is also a hole injection layer. The hole injection layer facilitates the efficient injection of holes from the electrodes into the hole transport layer.

[0247] Furthermore, the materials of the electron injection layer include one or more of zinc oxide (ZnO), titanium oxide (TiO2), cesium fluoride (CsF), LiF, Li2O, fullerenes and their derivatives, carbon nanotubes (CNTs), and graphene.

[0248] Furthermore, the materials for the hole injection layer include, but are not limited to, tetrafluorotetracyanoquinone dimethyl ether, N,N'-bis[4-di(m-tolyl)aminophenyl]-N,N'-diphenylbenzidine, and tungsten oxide (WO3). 3-x CD2, where C is one or more of Cr or Mo; and D is one or more of O, S, Se, and Te.

[0249] In some embodiments, the solar cell includes a first electrode, an optional first charge injection layer, an optional first charge transport layer, a light absorption layer, an optional second charge transport layer, an optional second charge injection layer, and a second electrode stacked together. Further, the first electrode is formed on a substrate.

[0250] Referring to Figure 5, as an example, the solar cell 10 includes a first electrode 210, a first charge injection layer 710, a first charge transport layer 310, a light absorption layer 100, a second charge transport layer 320, a second charge injection layer 720, and a second electrode 220 stacked together. As an example, the solar cell 10 includes a substrate 800, a first electrode 210, a first charge injection layer 710, a first charge transport layer 310, a light absorption layer 100, a second charge transport layer 320, a second charge injection layer 720, and a second electrode 220 stacked together.

[0251] In some embodiments, the solar cell includes a first electrode, an optional first charge injection layer, an optional first charge transport layer, an optional first passivation layer, a light absorption layer, an optional second passivation layer, an optional second charge transport layer, an optional second charge injection layer, and a second electrode, all stacked together. Further, the first electrode is formed on a substrate.

[0252] As an example, a solar cell includes a first electrode, a first charge injection layer, a first charge transport layer, a first passivation layer, a light absorption layer, a second passivation layer, a second charge transport layer, a second charge injection layer, and a second electrode stacked together.

[0253] In some embodiments, the solar cell includes a first electrode, an optional first charge injection layer, an optional first charge transport layer, an optional first passivation layer, a light absorption layer, an optional second passivation layer, an optional second charge transport layer, an optional second charge injection layer, and a second electrode, all stacked together. Further, the first electrode is formed on a substrate.

[0254] As an example, a solar cell includes a first electrode, a first charge injection layer, a first charge transport layer, a first passivation layer, a light absorption layer, a second passivation layer, a second charge transport layer, a second charge injection layer, and a second electrode stacked together.

[0255] Understandably, one or more of the above-mentioned charge transport layer, passivation layer, barrier layer and charge injection layer can be arbitrarily combined to form a combined technical solution, all of which are within the scope of the technical solution of this application.

[0256] In some embodiments, the materials of the first electrode and the second electrode each independently include one or more of inorganic conductive materials, organic conductive materials, and organic-inorganic mixed conductive materials.

[0257] As an example, inorganic conductive materials include one or more of carbon materials, metallic materials and their alloys, and conductive metal oxides.

[0258] Furthermore, carbon materials include, but are not limited to, one or more of graphite, graphene, and carbon nanotubes.

[0259] Furthermore, conductive metal oxides include transparent conductive metal oxides.

[0260] Furthermore, the metallic materials and their alloys include one or more of Au (gold), Ag (silver), Cu (copper), Al (aluminum), Ni (nickel), Cr (chromium), Bi (bismuth), Pt (platinum), Mg (magnesium), Mo (molybdenum), and W (tungsten).

[0261] As an example, organic conductive materials include one or more of polyacrylic acid, polyimide (PI), polyaniline (PANI), polythiophene (PT), polypyrrole, and their derivatives. Polythiophene (PT) and its derivatives include, but are not limited to, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS).

[0262] As described above, at least one of the first and second electrodes is a light-transmitting electrode. The material of the light-transmitting electrode includes, but is not limited to, transparent conductive metal oxides. As an example, the material of the transparent electrode may include, but is not limited to, one or more of the following transparent conductive metal oxides: FTO (fluorine-doped tin oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), lanthanide-doped indium oxide, antimony-doped tin oxide, gallium zinc oxide (GZO), and indium tungsten oxide (IWO).

[0263] Furthermore, the solar cell also includes a substrate, on which the first electrode is disposed. The substrate can be made of glass, thus forming a transparent conductive glass with the first electrode material. Examples of transparent conductive glasses include FTO (fluorine-doped tin oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), and IZO (indium zinc oxide).

[0264] It is understandable that, in addition to using glass as a substrate, transparent flexible substrates can also be used for transparent electrodes. Specifically, the material of the transparent flexible substrate can be, for example, an organic polymer material, which can be one or more of the following materials mixed in different proportions: polyethylene terephthalate, polyethylene, polypropylene, polystyrene, polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene dinaphthalate (PEN), and polydimethylsiloxane (PDMS).

[0265] When one electrode is a transparent electrode, the other electrode can be either a transparent electrode or an opaque electrode. If the other electrode is an opaque electrode, its material includes, but is not limited to, organic materials, inorganic materials, or conductive materials that are a mixture of organic and inorganic materials in different proportions. Further, inorganic materials include metallic materials, and the corresponding electrode is a metallic electrode.

[0266] The aforementioned electrode layer, hole transport layer, electron transport layer, blocking layer, injection layer, light absorption layer, and other structural layers can be prepared using methods commonly used in the field, including but not limited to one or more of coating and deposition methods.

[0267] Furthermore, the coating method includes, but is not limited to, one or more of spin coating, spray coating, brush coating, wiping coating, screen coating, gravure coating, squeegee coating, and slot coating. Furthermore, depending on the precursor used in the coating method, it includes, but is not limited to, one or more of sol-gel and solution coating methods.

[0268] Furthermore, the deposition methods include, but are not limited to, one or more of the following: vacuum evaporation, sputtering deposition, plasma deposition, ion deposition, atomic layer deposition, and vacuum flash evaporation.

[0269] As an example, tin dioxide electron transport layers can be prepared using atomic layer deposition (ALD); organic electron transport layers such as methyl [6,6]-phenyl C61 butyrate can be prepared using vacuum evaporation.

[0270] As an example, perovskite layers can be prepared by methods such as vacuum flash evaporation (VCD), vacuum deposition, and multi-source co-evaporation; perovskite layers can also be prepared by coating methods.

[0271] As an example, a hole transport layer such as nickel oxide can be prepared by magnetron sputtering;

[0272] As an example, the metal electrode layer can be prepared by vacuum evaporation. It is understood that the structure of the solar cell described in this application is not limited to the structural layers listed above. Other functional layers, such as buffer layers, can also be introduced as needed.

[0273] In some embodiments, the stacking direction of each layer of the solar cell structure is the thickness direction, which can be referred to as the first direction, and can also be referred to as the Y direction in Figure 6.

[0274] Referring to Figure 6, the solar cell 10 has channels P1, P2, and P3. Channels P1, P2, and P3 are etched regions arranged across layers, used to divide a large-area film layer into multiple sub-cells and form a series structure among these sub-cells to improve output voltage and power. P1, P2, and P3 are used to connect spaced-apart structural layers, thereby creating a pathway between the first electrode of one sub-cell and the second electrode of another, thus forming a solar cell module.

[0275] Channels P1, P2, and P3 can each be independently linear etching regions, also known as etching lines. Channels P1, P2, and P3 can each be independently laser etching regions. The number of channels P1, P2, and P3 can each be one or more.

[0276] The P1 channel is located on the first electrode and divides the first electrode along the thickness direction Y of the solar cell, so that the first electrodes of two adjacent sub-cells in the X direction are not connected to each other, thereby achieving insulation.

[0277] In this design, the P2 channel divides the light-absorbing layer along the thickness direction Y of the solar cell and exposes the first electrode. The P2 channel is filled with the material of the second electrode or other conductive material to connect the first and second electrodes of adjacent sub-cells.

[0278] In this design, the P3 channel divides the second electrode along the thickness direction Y of the solar cell, thus forming multiple sub-cells. This ensures that the second electrodes of adjacent sub-cells in the X direction are not connected, achieving insulation. The sub-cells within the solar cell can be divided and connected through these channels.

[0279] The height direction of each channel corresponds to the thickness direction Y of the solar cell. The width direction of each channel corresponds to the width direction of the solar cell, which can be referred to as the second direction, or the X direction in Figure 6. The length direction of each channel corresponds to the length direction of the solar cell, which can be referred to as the third direction or the Z direction. In some embodiments, the Z, X, and Y directions are orthogonal to each other.

[0280] It is understandable that the height of each channel is determined by the thickness of the structural layer it divides, the width of each channel can be adjusted according to the laser scribing process, and the length of each channel can be determined according to the length of the solar cell.

[0281] In some embodiments, a solar cell 10 as shown in FIG6 is provided, which includes a substrate 800, a first electrode 210, a first charge transport layer 310, a light absorption layer 100, a second charge transport layer 320, and a second electrode 220 sequentially stacked along the Y direction. The solar cell 10 has a P1 channel dividing the first electrode 210, a P2 channel dividing the first charge transport layer 310, the light absorption layer 100, and the second charge transport layer 320, and a P3 channel dividing the second electrode 220.

[0282] The channels in the solar cell 10 divide the solar cell 10 into several sub-cells. Each sub-cell includes a P1 channel, a P2 channel and a P3 channel. The P1 channel, P2 channel and P3 channel in each sub-cell are arranged sequentially along the X direction.

[0283] Each sub-cell includes an active region 11 and a dead region 12 surrounded by three types of channels. The active region 11 refers to the area in a solar cell that can effectively absorb photons, generate photogenerated carriers (electrons and holes), and achieve charge separation and transport. It corresponds to the area between the directly adjacent P3 and P1 channels, where P3 and P1 are directly adjacent (no P2 channel is located between them). The dead region refers to the area in a solar cell where photoelectric conversion cannot be effectively performed; it corresponds to the area between the P1 and P3 channels located on either side of the P2 channel.

[0284] In the solar cell 10 shown in Figure 6, the P1 channel passes through the first electrode 210 and is connected to the substrate 800 and the first charge transport layer 310 at both ends, respectively; the P2 channel passes through the second charge transport layer 320, the light absorption layer 100 and the first charge transport layer 310, and is connected to the first electrode 210 and the second electrode 220 at both ends, respectively; the P3 channel passes through the second electrode 220, the second charge transport layer 320, the light absorption layer 100 and the first charge transport layer 310, and exposes the outer surface of the first electrode 210, wherein the outer surface of the first electrode 210 refers to the side of the first electrode 210 facing the light absorption layer 100.

[0285] In this application, unless otherwise specified, "stacked" means that any two defined structural layers are arranged adjacent to each other and that the two adjacent structural layers can be in direct contact; it is understood that an unavoidable transition layer is allowed to be formed during the process of compositing two adjacent structural layers.

[0286] In some embodiments, the solar cell may also be a tandem solar cell, comprising one or more of the aforementioned cell cells containing the silver bismuth sulfide material. Further, the tandem solar cell includes a first cell cell comprising the aforementioned silver bismuth sulfide material. Further, the first cell cell includes the first electrode, light-absorbing layer, and second electrode described above; further, the first cell cell may optionally include other films described above, including but not limited to one or more of the following: a transport layer, a passivation layer, a barrier layer, and a charge injection layer.

[0287] Furthermore, the tandem solar cell also includes a second cell unit, which is stacked on top of the first cell unit. The light-absorbing layer of the second cell unit is made of one or more semiconductor materials selected from, but not limited to, perovskite, silver-bismuth-sulfur, crystalline silicon, copper indium gallium selenide, cadmium telluride, copper zinc tin sulfide, and gallium arsenide. The band gaps of the light-absorbing layers in the first and second cell units are different. Further, the band gap of the light-absorbing layer in the second cell unit is larger than the band gap of the light-absorbing layer in the first cell unit.

[0288] Furthermore, the band gap of the light-absorbing layer in the second battery cell is 1.5 eV to 1.9 eV, and can be selected as 1.53 eV to 1.65 eV. As an example, the band gap of the light-absorbing layer in the second battery cell can be 1.5 eV, 1.53 eV, 1.55 eV, 1.58 eV, 1.6 eV, 1.61 eV, 1.62 eV, 1.63 eV, 1.65 eV, 1.66 eV, 1.68 eV, 1.7 eV, 1.75 eV, 1.8 eV, 1.85 eV, 1.9 eV, or any two of the above values ​​as endpoints.

[0289] Furthermore, the second battery cell includes a third electrode, a light-absorbing layer, and a fourth electrode. Furthermore, the tandem solar cell also includes a connecting layer. The connecting layer is disposed between the first and second battery cells, connecting the two battery cells. Furthermore, the connecting layer is disposed between the second electrode and the third electrode.

[0290] In some embodiments, the connecting layer includes an insulating layer. This insulating connecting layer circuitically isolates the first and second battery cells. Each battery cell has two electrodes, for a total of four electrodes. The circuits of the two battery cells are independent, forming a four-terminal tandem solar cell. The working principle of this tandem solar cell with an insulating connecting layer is as follows: each battery cell has an independent electrode, allowing it to independently receive sunlight and generate voltage and current. Then, the outputs of the two battery cells are connected in parallel through an external circuit, such that the total voltage is the lower of the two battery cell voltages, and the total current is the sum of the currents of the two battery cells.

[0291] Four-terminal tandem solar cells have lower requirements for current and voltage matching of cell units because each cell unit operates independently, unlike two-terminal tandem solar cells which require more precise current and voltage matching. Four-terminal tandem solar cells can more flexibly combine different types and performance of cell units to adapt to different application scenarios and needs, and to a certain extent reduce the performance loss caused by mutual interference between cell units.

[0292] Furthermore, since the third and fourth electrodes are located in the middle of the tandem solar cell, in order to further increase the light energy utilization rate of the tandem solar cell and enable the remaining solar energy after absorption by the previous cell to enter the next cell, the third and fourth electrodes can also be set as light-transmitting electrodes.

[0293] Furthermore, at least one of the first and second electrodes is a light-transmitting electrode. Further, only one of the first and second electrodes is a light-transmitting electrode, which serves as the incident side for sunlight. Further, both the first and second electrodes are light-transmitting electrodes, and both electrodes can serve as the incident side for solar energy. If solar light can be incident from both sides, it is beneficial to increase the intensity of sunlight received by the tandem solar cell.

[0294] In some embodiments, as an example of a four-terminal tandem solar cell, the tandem solar cell includes a first electrode, a first charge transport layer, a first light absorption layer, a second charge transport layer, a third electrode, a connecting layer, a fourth electrode, a third charge transport layer, a second light absorption layer, a fourth charge transport layer, and a second electrode stacked together.

[0295] Because the circuits of the cell units in a four-terminal tandem solar cell are independent, the types of charge transport layers located on both sides of the connecting layer or insulating layer are unrestricted and can be arbitrarily combined. In other words, the materials of the second and third charge transport layers can be the same or different, and they can each be independently an electron transport layer or a hole transport layer. Furthermore, one of the first and second charge transport layers can be an electron transport layer and the other a hole transport layer; one of the third and fourth charge transport layers can be an electron transport layer and the other a hole transport layer.

[0296] In some embodiments, the material of the insulating layer includes, but is not limited to, glass or an insulating adhesive. Further, the glass is transparent glass; further, the insulating adhesive is a transparent adhesive.

[0297] In some embodiments, the first and second battery cells are connected via a common electrode. For example, a common second electrode is used, and the second battery cell includes a fifth electrode opposite to this common second electrode. Thus, the tandem solar cell includes a first electrode, a first light-absorbing layer, a second electrode, a second light-absorbing layer, and a fifth electrode stacked sequentially. The second electrode, as a common electrode, can serve as either a positive or negative output electrode, while the first and fifth electrodes are electrodes with opposite polarities to the common electrode, thereby forming a three-terminal tandem solar cell. In a three-terminal tandem solar cell, the two battery cells are connected in parallel, eliminating the problem of current mismatch.

[0298] Furthermore, the thickness of the shared electrode is relatively large, but generally less than the combined thickness of the second and third electrodes in a four-terminal tandem solar cell. Therefore, the amount of electrode material used can be reduced, thereby lowering its cost to a certain extent.

[0299] Furthermore, the common electrode comprises a stacked transparent conductive oxide layer, a grid electrode layer, and another transparent conductive oxide layer. The transparent conductive oxide layer provides good light transmission, while the grid electrode layer enhances carrier collection while minimizing the light-absorbing area. Furthermore, the grid cell layer comprises metal grid lines.

[0300] It is understood that the material selection range for the charge transport layer and electrode layer in the second battery cell can be the same as that for the charge transport layer and electrode layer in the first battery cell. Furthermore, the second battery cell can also include corresponding passivation layers, barrier layers, and charge injection layers as needed, and the material selection range for each can be the same as that for the corresponding film layers in the first battery cell; these will not be elaborated further here. Further, the first light-absorbing layer mentioned above includes the aforementioned silver-bismuth sulfide type material. The second light-absorbing layer includes, but is not limited to, one or more semiconductor materials selected from perovskite materials, silver-bismuth sulfide type materials, crystalline silicon materials, copper indium gallium selenide, cadmium telluride, copper zinc tin sulfide, and gallium arsenide. Further, the band gap of the second light-absorbing layer is larger than the band gap of the first light-absorbing layer. Further, the second light-absorbing layer includes perovskite materials; as an example, the second light-absorbing layer is a perovskite material layer.

[0301] In some embodiments, the perovskite material includes one or more of a compound with the chemical formula A'B'Y3 and a compound with the chemical formula A'2CDY6;

[0302] Wherein, A' includes a monovalent cation, B' includes a divalent cation, C includes a monovalent cation, D includes a trivalent cation, and Y includes a monovalent anion. Further, A' is a monovalent cation, B' is a divalent cation, C is a monovalent cation, D is a trivalent cation, and Y is a monovalent anion.

[0303] In some embodiments, A' comprises one or more of a monovalent metal cation and a monovalent organic cation. Further, the monovalent metal cation in A' includes Li. + Na + K + 、Rb + and Cs + One or more of the following, wherein the monovalent organic cation includes one or more of organic amine ions, formamidinium ions, and imidazole-type ions. Further, the organic amine ion includes methylamine ions (CH3NH3). + MA + ), dimethyl diammonium ion (MDA) 2+ ), phenylethylammonium ion (PEA) + ), oleyl ammonium ion (OA) + ( ), one or more of ethylamine ions, propylamine ions, butylamine ions, pentamine ions, and hexamine ions.

[0304] In some embodiments, B' comprises one or more of a divalent metal cation and a divalent organic cation. Further, the divalent metal cation in B' comprises one or more of the divalent cations of the following elements: lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, beryllium, magnesium, calcium, strontium, barium, indium, aluminum, manganese, chromium, molybdenum, and europium.

[0305] In some embodiments, C comprises one or more of a monovalent metal cation and a monovalent organic cation. Further, the monovalent metal cation in C comprises Cs. + Ag + K + and Rb + One or more of the following.

[0306] In some embodiments, D comprises one or more of a trivalent metal cation and a trivalent organic cation. Further, the trivalent metal cation in D includes Bi. 3+ Ni 3+ Fe 3+ Sb 3+ In 3+ and Cu 3+ One or more of them.

[0307] In some embodiments, Y comprises one or more of a monovalent inorganic anion and a monovalent organic anion. Further, Y comprises one or more of a halide ion and a halide-like ion; optionally, Y comprises F. - Cl - ,Br - I - CN - CH3COO - SCN - BF4 - SeCN - PF6 - One or more of them.

[0308] In some embodiments, the thickness of the second light-absorbing layer is 200nm to 1000nm. As an example, the thickness of the second light-absorbing layer is 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, or 1000nm; optionally, it is 400nm to 600nm.

[0309] The perovskite material layer can be prepared using methods commonly used in the art, including but not limited to sol-gel methods, coating, and multi-source co-evaporation. It is understood that coating can be achieved through methods including but not limited to spin coating, slot coating, brush coating, wiping coating, scraping coating, screen coating, and spray coating. Furthermore, the perovskite material layer is a three-dimensional perovskite thin film.

[0310] As an example, the perovskite material in the perovskite material layer may include one or more of CsFAPbX3, CsMAPbX3, CsFAMAPbX3, CsPbX3, MAPbX3, FAPbX3, CsFAPbSnX3, CsMAPbSnX3, CsFAMAPbSnX3, CsPbSnX3, MAPbSnX3, and FAPbSnX3. Further, as an example, the perovskite material in the above-mentioned perovskite light-absorbing layer may be selected from one or more of CsFAPbI3, CsPbI3, and FAPbI3.

[0311] As an example, the general formula for perovskite materials is as follows: Cs a FA b MA c Pb d Sn e I f Br g , among them, a=0~0.05, b=0.8~0.95, c=0~0.1, d=0.5~1, e=0~0.5, f=2.0~3, g=0~1, a+b+c=1, d+e=1, f+g=3.

[0312] According to one embodiment of this application, a photovoltaic module is also provided, which includes the solar cell described above.

[0313] The aforementioned solar cells exhibit good stability, which can improve the stability and photoelectric conversion efficiency of photovoltaic modules.

[0314] The photovoltaic module mentioned above includes one or more of the aforementioned solar cells, which can be selected according to specific application scenarios; further, the photovoltaic module mentioned above includes multiple of the aforementioned solar cells, which are connected in series or in parallel to form a cell.

[0315] In some embodiments, the photovoltaic module further includes a photovoltaic glass layer, an adhesive layer, and a backsheet.

[0316] The solar cell has an adhesive layer on each of its two surfaces. A backsheet is provided on the surface of one adhesive layer away from the solar cell, and a photovoltaic glass layer is provided on the surface of the other adhesive layer away from the solar cell.

[0317] The photovoltaic glass layer and backsheet are used to protect the solar cells, and they have the functions of sealing, insulation and waterproofing; the adhesive layer plays the role of bonding the photovoltaic glass layer to the solar cells and bonding the backsheet to the solar cells.

[0318] In a non-limiting sense, the photovoltaic glass layer can be made of tempered glass, the backsheet can be made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the adhesive layer can be made of EVA (polyethylene-polyvinyl acetate copolymer).

[0319] Furthermore, the aforementioned photovoltaic modules also include junction boxes and outer frames.

[0320] Junction boxes are used to protect the entire photovoltaic module's power generation system. They are essentially a current transfer station. When a cell short-circuits, the junction box will automatically disconnect the short-circuited cell string.

[0321] The outer frame serves to support and protect the entire photovoltaic module. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0322] Furthermore, silicone is used to bond and seal the connections between the frame and other parts of the photovoltaic module. The photovoltaic module can convert solar energy into electrical energy, which can then be stored in batteries or used to power loads.

[0323] In some embodiments, the photovoltaic module is a solar panel.

[0324] According to one embodiment of this application, a photovoltaic system is also provided, including the photovoltaic module described above.

[0325] Photovoltaic systems utilize the photovoltaic effect of solar cells in the aforementioned photovoltaic modules to directly convert solar radiation energy into electrical energy, exhibiting high stability and efficiency.

[0326] In some embodiments, the photovoltaic system described above is a photovoltaic power generation system.

[0327] Photovoltaic modules are the core component of a photovoltaic power generation system. The aforementioned photovoltaic system includes one or more photovoltaic modules, which can be selected according to specific application scenarios. Furthermore, when the aforementioned photovoltaic system includes multiple photovoltaic modules, the multiple photovoltaic modules form a photovoltaic array.

[0328] The aforementioned photovoltaic system can be a stand-alone photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0329] An independent photovoltaic (PV) power generation system includes a PV array, battery bank, charge controller, power electronic converter (inverter), and load. Its working principle is that solar radiation energy is first converted into electrical energy by the PV array, then converted by the power electronic converter to supply power to the load. Simultaneously, excess electrical energy is stored as chemical energy in an energy storage device after passing through the charge controller. Thus, when sunlight is insufficient, the energy stored in the battery can be converted into 220V, 50Hz AC power by the power electronic inverter, filter, and power frequency transformer to supply AC loads.

[0330] A grid-connected photovoltaic (PV) power generation system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. Its working principle is that solar radiation energy is converted by the photovoltaic array, then converted into high-voltage DC by a high-frequency DC converter, and finally inverted by the power electronic inverter to output a sinusoidal alternating current to the grid that is in phase with the grid voltage.

[0331] The two photovoltaic power generation systems mentioned above each have their own characteristics and can be selected according to the specific application scenario.

[0332] One embodiment of this application provides an electrical device including at least one of the above-described solar cells and photovoltaic modules.

[0333] In some of these embodiments, the solar cells or photovoltaic modules described above can be the power source of an electrical device or the energy storage unit of an electrical device.

[0334] Furthermore, the aforementioned electrical devices may include, but are not limited to, mobile devices such as electric vehicles, electric trains, ships, and satellites.

[0335] Figure 7 shows an example of an electrical device 20. This electrical device 20 is a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle, etc.

[0336] In some embodiments, the aforementioned solar cells can be used as power generation devices for electrical devices. The type of power generation device may include, but is not limited to, integrated power generation. The location of the power generation device may include, but is not limited to, the roof of a vehicle, the back panel, etc.

[0337] One embodiment of this application provides a power generation device, including at least one of the above-described solar cells and photovoltaic modules.

[0338] Furthermore, the power generation device is a photovoltaic (PV) photovoltaic device.

[0339] To make the technical problems, technical solutions, and beneficial effects solved by this application clearer, the application will be further described in detail below with reference to embodiments and accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this application or its applications. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0340] Where specific techniques or conditions are not specified in the examples, they shall be performed in accordance with the techniques or conditions described in the literature in this field or in accordance with the product instructions. Reagents or instruments whose manufacturers are not specified are all commercially available conventional products.

[0341] Example 1

[0342] The fabrication of solar cells includes the following steps:

[0343] (1) First electrode: The first electrode layer is disposed on a glass substrate (substrate). The material of the first electrode layer is fluorine-doped tin oxide (FTO). The glass substrate with the first electrode layer is cleaned in sequence with acetone, alcohol and deionized water, and then dried for later use.

[0344] (2) Electron blocking layer: An Al2O3 layer with a thickness of 1 nm to 10 nm is prepared on the FTO of the dried FTO conductive glass by atomic layer deposition (ALD).

[0345] (3) First charge transport layer (hole transport layer): [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphoric acid (Me-4PACz) was added to ethanol solvent and stirred. The ethanol solution of Me-4PACz was spin-coated onto the Al2O3 layer (spin-coating speed was 4000 rpm and spin-coating time was 30 s). Then it was transferred to a hot stage and annealed at 100 °C for 10 min to form the first charge transport layer.

[0346] (4) Light absorption layer: 44 mg of AgNO3, 102 mg of Bi(NO3)3 and 59 mg of thiourea were added to 1 mL of DMSO (dimethyl sulfoxide) and stirred at 600 rpm for 2 h on a magnetic stirrer. The mixture was then filtered to obtain an AgBiS2 precursor solution. 100 μL of the AgBiS2 precursor solution was spin-coated onto the first charge transport layer (spin-coated at 6000 rpm and 1000 rpm for 60 s). The solution was then transferred to a hot plate and annealed at 200 °C for 10 min to form a light absorption layer.

[0347] (5) Second charge transport layer (electron transport layer): A C60 layer with a thickness of 30 nm is deposited on the above light absorption layer to form a second charge transport layer.

[0348] (6) Hole blocking layer: A 10nm thick copper bath (BCP) layer is vapor-deposited to form a hole blocking layer.

[0349] (7) Second electrode: A layer of copper (Cu) with a thickness of 100 nm is deposited on the hole blocking layer to form the second electrode. An AgBiS2 solar cell device is obtained.

[0350] The photoelectric conversion efficiency and stability performance of solar cell devices were tested.

[0351] (1) The photoelectric conversion efficiency of the solar cell device was tested. The test method was as follows:

[0352] Using Keithley 2400SMU, AM1.5G solar irradiation at 100mW / cm 2 Under a specific light source, the battery performance was tested to obtain the photoelectric conversion efficiency (PCE). The PCE is calculated using the following parameters: PCE = Pout / Popt = Voc × Jsc × (Vmpp × Jmpp) / (Voc × Jsc) / Popt = Voc × Jsc × FF / Popt

[0353] Where Pout, Popp, Vmpp, Jmpp, Voc, and Jsc represent the battery's operating output power, incident light power, battery's maximum power point voltage, battery's maximum power point current, open-circuit voltage, and short-circuit current, respectively. FF is the fill factor.

[0354] (2) The stability of the solar cell device was tested. The test method was as follows:

[0355] The solar cell was placed at 65℃ and 100mW / cm². 2 Under continuous illumination by a light source, the photoelectric conversion efficiency is tracked as the aging time increases. The time required for the photoelectric conversion efficiency to decay to 80% of the initial efficiency is denoted as T80. The magnitude of this parameter indicates the stability of the solar cell.

[0356] The prepared solar cell includes the silver bismuth sulfide material thin film AgBiS2. Because the silver bismuth sulfide material AgBiS2 has good thermal stability, the solar cell can have good device stability during long-term operation and provide good photoelectric conversion efficiency.

[0357] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0358] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims, and the specification and drawings can be used to interpret the scope of the claims.

Claims

1. A solar cell comprising a silver bismuth sulfide type material.

2. The solar cell as claimed in claim 1, wherein, The silver-bismuth sulfide type material includes one or more of the cubic rock salt phase crystal form and the hexagonal phase crystal form.

3. The solar cell according to any one of claims 1 to 2, wherein, The grain size of the silver bismuth sulfide type material is ≥10nm, which can be selected as 10nm~10μm, or more preferably 10nm~500nm or 50nm~200nm.

4. The solar cell according to any one of claims 1 to 3, wherein, The silver bismuth sulfide type material includes one or both of polycrystalline and monocrystalline forms.

5. The solar cell according to any one of claims 1 to 4, wherein, The band gap of the silver-bismuth sulfide type material is 0.8eV to 1.4eV, preferably 0.8eV to 1.2eV, and more preferably 0.9eV to 1.1eV.

6. The solar cell according to any one of claims 1 to 5, wherein, The solar cell includes: First electrode; Second electrode; And the silver-bismuth sulfide-type material disposed between the first electrode and the second electrode.

7. The solar cell according to any one of claims 1 to 6, wherein, The solar cell includes: First electrode; Second electrode; And a light-absorbing layer disposed between the first electrode and the second electrode, the light-absorbing layer comprising the silver bismuth sulfide type material.

8. The solar cell according to any one of claims 1 to 7, wherein, The solar cell includes a thin film containing the silver bismuth sulfide type material.

9. The solar cell according to any one of claims 7 to 8, wherein, The thickness of the light-emitting layer or the thin film containing the silver bismuth sulfide material is 10 nm to 20 μm, and can be selected as 10 nm to 10 μm; more preferably, it can be 30 nm to 500 nm or 50 nm to 200 nm.

10. The solar cell of claim 7, wherein, The solar cell further includes one or both of a first charge transport layer and a second charge transport layer; The first charge transport layer is located between the first electrode and the light absorption layer; The second charge transport layer is located between the second electrode and the light absorption layer; In this configuration, one of the first charge transport layer and the second charge transport layer is an electron transport layer, and the other is a hole transport layer.

11. The solar cell of claim 10, wherein, The electron transport layer comprises one or more of the following materials and their derivatives, dopants, and passivated materials: [6,6]-phenyl C61 butyrate methyl ester, [6,6]-phenyl C71 butyrate methyl ester, fullerene C61, fullerene C60, fullerene C70, tin dioxide, zinc oxide, perylene imide materials and naphthalene imide materials.

12. The solar cell according to any one of claims 10 to 11, wherein, The thickness of the electron transport layer is 1 nm to 300 nm, and can be selected as 1 nm to 100 nm.

13. The solar cell according to any one of claims 10 to 12, wherein, The hole transport layer comprises one or more of the following materials and their derivatives, dopants, and passivated materials: Nickel oxide, molybdenum oxide, molybdenum sulfide, cuprous oxide, cuprous iodide, cuprous thiocyanate, 2,2',7,7'-tetra(N,N-p-methoxyaniline)-9,9'-spirobifluorene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, poly-3-hexylthiophene, methoxytriphenylamine-fluoroformamidinium, triphenylamine with a triphenylene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-4-anilinecarbazole-spirobifluorene, polythiophene, and self-assembled monomolecule materials.

14. The solar cell according to any one of claims 10 to 13, wherein, The thickness of the hole transport layer is 1nm to 500nm, and can be selected as 1nm to 300nm or 1nm to 100nm.

15. The solar cell of claim 7, wherein, One or more of the following conditions must be met: (1) The solar cell further includes a first passivation layer, which is disposed on the side of the light-absorbing layer facing the first electrode. Optionally, the first passivation layer is disposed on at least a portion of the surface of the light-absorbing layer facing the first electrode. (2) The solar cell further includes a second passivation layer, which is disposed on the side of the light-absorbing layer facing the second electrode. Optionally, the second passivation layer is disposed on at least a portion of the surface of the light-absorbing layer facing the second electrode.

16. The solar cell according to any one of claims 7, 10 to 15, wherein, One or more of the following conditions must be met: (1) The solar cell includes a first passivation layer and a first charge transport layer, wherein the first passivation layer is disposed between the first charge transport layer and the light absorption layer; (2) The solar cell includes a second passivation layer and a second charge transport layer, wherein the second passivation layer is disposed between the light absorption layer and the second charge transport layer.

17. The solar cell according to any one of claims 15 to 16, wherein, The thickness of the first passivation layer and the second passivation layer are each independently 1 nm to 20 nm.

18. The solar cell according to any one of claims 15 to 17, wherein, The material in the first passivation layer and / or the second passivation layer is chemically bonded to the anionic or cationic material of the light-absorbing layer.

19. The solar cell according to any one of claims 7, 10 to 18, wherein, One or more of the following conditions must be met: (1) The solar cell further includes a first barrier layer, which is disposed between the first electrode and the light-absorbing layer; (2) The solar cell further includes a second barrier layer, which is disposed between the light-absorbing layer and the second electrode; In this process, one of the first blocking layer and the second blocking layer is an electron blocking layer, and the other is a hole blocking layer.

20. The solar cell according to any one of claims 7, 10 to 19, wherein, One or more of the following conditions must be met: (1) The solar cell includes a first barrier layer and a first charge transport layer, wherein the first barrier layer is disposed between the first electrode and the first charge transport layer, and / or, the first barrier layer is disposed between the first charge transport layer and the light absorption layer; (2) The solar cell includes a second barrier layer and a second charge transport layer, wherein the second barrier layer is disposed between the second electrode and the second charge transport layer, and / or the second barrier layer is disposed between the light absorption layer and the second charge transport layer.

21. The solar cell according to any one of claims 16 to 19, wherein, One or more of the following conditions must be met: (1) The solar cell includes a first barrier layer and a first passivation layer, wherein the first barrier layer is disposed between the first electrode and the first passivation layer; (2) The solar cell includes a second barrier layer and a second passivation layer, wherein the second barrier layer is disposed between the second passivation layer and the second electrode.

22. The solar cell of claim 19, wherein, One or more of the following conditions must be met: (1) The LUMO energy level of the hole blocking layer material is lower than the conduction band bottom (CBM) of the light absorbing layer material, and the HOMO energy level of the hole blocking layer material is lower than the valence band top (VBM) of the light absorbing layer material; Optionally, the hole blocking layer includes one or more of 2,9-dimethyl-4,7-biphenyl-1,10-o-phenanthroline, SnO2, ZnO and cerium oxide; (2) The LUMO energy level of the electron blocking layer material is higher than the conduction band bottom CBM of the light absorbing layer material, and the HOMO energy level of the electron blocking layer material is higher than the valence band top VBM of the light absorbing layer material; Optionally, the electron blocking layer includes one or more of molybdenum oxide, vanadium oxide, LiF and Al2O3.

23. The solar cell according to any one of claims 19 to 22, wherein, The thickness of the first barrier layer and the second barrier layer are each independently 0.5 nm to 50 nm.

24. The solar cell according to any one of claims 10 to 23, wherein, The solar cell includes a first electrode, a first barrier layer, a first charge transport layer, a light absorption layer, a second charge transport layer, a second barrier layer, and a second electrode stacked together.

25. The solar cell according to any one of claims 10 to 24, wherein, The solar cell includes a first electrode, a first barrier layer, a first charge transport layer, a first passivation layer, a light absorption layer, a second passivation layer, a second charge transport layer, a second barrier layer, and a second electrode, which are stacked together.

26. The solar cell according to any one of claims 6 to 7, 10 to 25, wherein, The materials of the first electrode and the second electrode each independently include one or more of inorganic conductive materials, organic conductive materials, and organic-inorganic mixed conductive materials.

27. The solar cell of claim 26, wherein, One or more of the following conditions must be met: (1) The inorganic conductive material includes one or more of carbon materials, metallic materials and their alloys, and transparent conductive metal oxides; (2) The organic conductive material includes one or more of polyacrylic acid, polyimide, polyaniline, polythiophene, polypyrrole and their derivatives.

28. The solar cell according to any one of claims 6 to 7, 10 to 26, wherein, At least one of the first electrode and the second electrode is a light-transmitting electrode.

29. The solar cell according to any one of claims 10 to 28, wherein, The solar cell includes a first electrode, a first charge transport layer, a light absorption layer, a second charge transport layer, and a second electrode stacked together, wherein the first electrode is a light-transmitting electrode; in, The first charge transport layer is an electron transport layer, and the second charge transport layer is a hole transport layer; or, The first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer.

30. The solar cell according to any one of claims 10 to 29, wherein, The solar cell includes a first electrode, a first blocking layer, a hole transport layer, a light absorption layer, an electron transport layer, a second blocking layer, and a second electrode stacked together, wherein the first electrode is a light-transmitting electrode.

31. The solar cell according to any one of claims 10 to 30, wherein, The solar cell includes a first electrode, a first blocking layer, a hole transport layer, a first passivation layer, a light absorption layer, a second passivation layer, an electron transport layer, a second blocking layer, and a second electrode stacked together, wherein the first electrode is a light-transmitting electrode.

32. The solar cell according to any one of claims 1 to 31, wherein, The chemical formula of the silver bismuth sulfide type material is MX, where M is a cation and X is an anion; optionally, X includes one or more divalent anions; optionally, M includes one or more cations.

33. The solar cell of claim 32, wherein, The divalent anion includes one or more of divalent inorganic anions and divalent organic anions.

34. The solar cell of claim 33, wherein, The divalent inorganic anions include O 2- S 2- Se 2- and Te 2- One or more of the following; optionally including S 2- .

35. The solar cell according to any one of claims 32 to 34, wherein, M includes one or more of metal cations and organic cations; Optionally, the metal cation includes Ag. + Li + Na + K + 、Rb + Cs + Cu + Ni 2+ Cu 2+ Zn 2+ Co 2+ Bi 3+ Ga 3+ In 3+ Sb 3+ Al 3+ 、Tl 3+ and Co 3+ One or more of the following; Optionally, the organic cation includes at least one of organic amine ions, formamidinium ions, and imidazole ions.

36. The solar cell of claim 32, wherein, M includes a first cation A and a second cation B, which have different elemental types; Optionally, the first cation A and the second cation B each independently comprise Ag. + Li + Na + K + 、Rb + Cs + Cu + Ni 2+ Cu 2+ Zn 2+ Co 2+ Bi 3+ Ga 3+ In 3+ Sb 3+ Al 3+ 、Tl 3+ and Co 3+ One or more of the following; Optionally, the first cation A includes Ag. + Li + Na + K + 、Rb + and Cs + One or more of the following; Optionally, the second cation B comprises Bi. 3+ .

37. The solar cell of claim 36, wherein, The silver bismuth sulfide type material includes materials with the chemical formula A. x B y Compounds of X2, where the values ​​of x and y make A x B y The overall valence state of the X2 compound is 0.

38. The solar cell according to any one of claims 36 to 37, wherein, The silver bismuth sulfide type material includes a compound with the chemical formula ABX2, wherein the first cation A is a monovalent cation, the second cation B is a trivalent cation, and X is a divalent anion.

39. The solar cell of claim 36, wherein, The silver bismuth sulfide type material includes materials with the chemical formula A. x B y X' z X” 2-z The compound X includes divalent anions X' and X'', where z is 0 to 2.

40. The solar cell of claim 39, wherein, The silver bismuth sulfide type material includes materials with the chemical formula ABX' z X” 2-z The compound has the first cation A being a monovalent cation, the second cation B being a trivalent cation, and X comprising divalent anions X' and X'', with z ranging from 0 to 2.

41. The solar cell according to any one of claims 39 to 40, wherein, One or more of the following conditions must be met: (1) The divalent anion X' and the divalent anion X” have different element types; (2) X' is S 2- z is not 0; (3) X” is selected from O 2- Se 2- and Te 2- One or more of them.

42. The solar cell according to any one of claims 1 to 40, wherein, The silver-bismuth sulfide type material includes AgBiS2 and AgBiS. z O 2-z AgBiS z Se 2-z AgBiS z Te 2-z One or more of the following, where z is 0 to 2.

43. A photovoltaic module comprising the solar cell according to any one of claims 1 to 42.

44. A photovoltaic system comprising one or more of the solar cells according to any one of claims 1 to 42 and the photovoltaic module according to claim 43.

45. An electrical device comprising one or more of the solar cell according to any one of claims 1 to 42 and the photovoltaic module according to claim 43.

46. ​​A power generation device comprising one or more of the solar cells according to any one of claims 1 to 42 and the photovoltaic module according to claim 43.

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