Semiconductor process apparatus

Abstract

Disclosed in the present application is a semiconductor process apparatus. The disclosed semiconductor process apparatus comprises a process chamber, a distribution pipe and a feed pipe, wherein an opening is provided at the bottom of the process chamber; the distribution pipe is arranged in the process chamber and is attached to at least the top surface of the process chamber, and the distribution pipe is provided with a plurality of gas injection holes; and the feed pipe extends into the process chamber and is in communication with the distribution pipe, and the feed pipe is configured to supply process gas to the distribution pipe, such that the process gas is delivered into the process chamber through the plurality of gas injection holes. By means of attaching the distribution pipe to the top surface of the process chamber, on the one hand, the top surface of the process chamber can be structurally reinforced, such that the top surface is not prone to softening and collapsing; and on the other hand, the process gas flowing in the distribution pipe can also take away a part of heat from the top surface, such that the temperature of the top surface can be reduced, and the probability of softening and collapse of the top surface is further reduced.

Description

Semiconductor process equipment TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a semiconductor process equipment. BACKGROUND

[0002] As a semiconductor equipment capable of processing a large number of wafers in batches, the vertical furnace plays an important role in the wafer manufacturing process. The wafers will undergo process reactions in the vertical furnace, and the structural stability of the vertical furnace is directly related to the processing quality of the wafers.

[0003] In the related art, the vertical furnace includes a process outer tube and a process inner tube made of quartz. The process outer tube is sleeved outside the process inner tube, and the top of the process outer tube is designed in an arch shape. At a high process temperature, heat accumulates at the arch top of the process outer tube, which causes the arch top to soften and collapse at high temperature, thereby affecting the normal operation of the vertical furnace. SUMMARY

[0004] The present application discloses a semiconductor process equipment to solve the problem of softening and collapse of the process outer tube at the arch top in the related art.

[0005] To solve the above technical problems, the present application is implemented as follows:

[0006] The present application discloses a semiconductor process equipment. The disclosed semiconductor process equipment includes a process chamber, a shunt pipeline, and a supply pipeline.

[0007] The bottom of the process chamber is provided with an opening. The shunt pipeline is arranged in the process chamber and at least adheres to the top surface of the process chamber. The shunt pipeline is provided with a plurality of air injection holes.

[0008] The supply pipeline extends into the process chamber and communicates with the shunt pipeline. The supply pipeline is used to supply process gas to the shunt pipeline, so that the process gas is transmitted into the process chamber through the plurality of air injection holes.

[0009] The technical solution adopted by the present application can achieve the following technical effects:

[0010] The semiconductor process equipment disclosed by the embodiments of the present application improves the related art, and comprises a process chamber, a shunt pipeline and a supply pipeline. The bottom of the process chamber is provided with an opening, the shunt pipeline is arranged in the process chamber and at least adheres to the top surface of the process chamber, and the shunt pipeline is provided with a plurality of air injection holes. The supply pipeline extends into the process chamber and communicates with the shunt pipeline, and the supply pipeline is used for supplying process gas to the shunt pipeline so that the process gas is transmitted into the process chamber through the plurality of air injection holes. By adhering the shunt pipeline to the top surface of the process chamber, on the one hand, the top surface of the process chamber can be structurally reinforced, so that the top surface is less likely to soften and collapse; on the other hand, the process gas flowing in the shunt pipeline can also take away part of the heat of the top surface, thereby reducing the temperature of the top surface and further reducing the probability of the top surface softening and collapsing. BRIEF DESCRIPTION OF DRAWINGS

[0011] Fig. 1 is a structural schematic diagram of the semiconductor process equipment disclosed by the embodiments of the present application;

[0012] Fig. 2 is a structural schematic diagram of the process chamber disclosed by the embodiments of the present application;

[0013] Fig. 3 is a structural schematic diagram of the process chamber disclosed by the embodiments of the present application;

[0014] Fig. 4 is a structural schematic diagram of the supply pipeline and the shunt pipeline disclosed by the embodiments of the present application;

[0015] Fig. 5 is a structural schematic diagram of the flow uniformization cavity disclosed by the embodiments of the present application;

[0016] Fig. 6 is a comparison diagram of the process chamber disclosed by the embodiments of the present application and the process outer tube in the related art;

[0017] Fig. 7 is a comparison diagram of the wafer in-plane film thickness uniformity of the process chamber disclosed by the embodiments of the present application and the process outer tube in the related art at different positions.

[0018] Mark explanation: 110-process chamber, 120-shunt pipeline, 121-air injection hole, 122-sub pipeline, 1221-first pipe body, 1222-second pipe body, 123-flow uniformization cavity, 130-supply pipeline, 140-strengthening part, 141-first annular strengthening part, 142-second annular strengthening part, 150-furnace body, 160-support frame, 161-exhaust port, 170-wafer, 180-chamber sealing door, 190-heat preservation barrel. DETAILED DESCRIPTION

[0019] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be described below in connection with the specific embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0020] The terms "first", "second", and the like in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally a category and do not limit the number of objects, for example, the first object can be one or more.

[0021] The technical solutions disclosed in the various embodiments of the present application will be described in detail below in connection with the drawings.

[0022] In the semiconductor manufacturing process, especially in the semiconductor heat treatment process, the vertical furnace is widely used due to its small floor area and high processing efficiency. A vertical furnace usually uses a vertical holding boat as a holding tool for the transfer and processing of wafers or chips. The material of the general holding boat is quartz or silicon carbide, which is suitable for different temperature zone heat treatment processes.

[0023] As a commonly used semiconductor heat treatment process, LPCVD (Low Pressure Chemical Vapor Deposition) is widely used for the deposition of silicon oxide, nitride, polysilicon and other film layers. In the related art, taking the processing of a wafer as an example, a vertical furnace includes a process outer tube and a process inner tube made of quartz material. The process outer tube is sleeved outside the process inner tube, the process inner tube is the main process place, the holding boat carries the wafer and is placed in the process inner tube, the process inner tube adopts a structure with two open ends, process gas enters the process inner tube from the gas inlet at the bottom of the process inner tube, and is discharged from the exhaust passage between the process inner tube and the process outer tube after circulation. The top of the process outer tube is usually designed in an arch shape. Since the temperature inside the process outer tube is relatively high, heat accumulation is prone to occur at the top of the process outer tube, which leads to the problem of softening and collapse at the arch top under high temperature, thereby affecting the normal operation of the vertical furnace.

[0024] Based on the above, please refer to FIG. 1 to FIG. 7, the embodiment of the application discloses a kind of semiconductor process equipment, the disclosed semiconductor process equipment can include process chamber 110, shunt pipeline 120 and supply pipeline 130.Process chamber 110 is the main process place, process chamber 110 can be made of quartz, sapphire and other high-temperature-resistant materials, the bottom of process chamber 110 is provided with opening, to facilitate the layout of supply pipeline 130 and wafer 170 into and out of process chamber 110.

[0025] As shown in FIG. 1 and FIG. 2, the top of process chamber 110 adopts arch design, shunt pipeline 120 is arranged in process chamber 110, and shunt pipeline 120 is at least attached to the top surface of process chamber 110, in addition, shunt pipeline 120 can also be attached to the side surface of process chamber 110, and the connection mode between shunt pipeline 120 and the top surface of process chamber 110 can include welding and the like.

[0026] Supply pipeline 130 can extend into process chamber 110 through the opening at the bottom of process chamber 110, or can be opened on the side surface of process chamber 110 to make supply pipeline 130 extend into process chamber 110, and the two ends of supply pipeline 130 are respectively communicated with gas supply equipment and shunt pipeline 120, shunt pipeline 120 is provided with a plurality of gas injection holes 121, which are directed towards the inside of process chamber 110, and the process gas supplied by the gas supply equipment can be transmitted to shunt pipeline 120 through supply pipeline 130, and transmitted to process chamber 110 through a plurality of gas injection holes 121 for process reaction, and the reacted process gas can be discharged from the exhaust port at the bottom of process chamber 110.Shunt pipeline 120 and supply pipeline 130 can also be made of quartz, sapphire and other high-temperature-resistant materials, and the specific number and size of gas injection holes 121 can be selected according to actual process requirements, which is not limited in the embodiment of the application.

[0027] As shown in FIG. 2 to FIG. 4, the above-mentioned shunt pipeline 120 can include a plurality of pipelines, which can be arranged in a cross shape or a well shape on the top surface of process chamber 110.As shunt pipeline 120 itself has a certain structural strength, shunt pipeline 120 is attached and installed on the top surface of process chamber 110, which can improve the structural strength of the top surface of process chamber 110 to a certain extent, thereby reducing the probability of softening and collapse of the top surface of process chamber 110.

[0028] When the process gas flows inside the shunt pipeline 120, the process gas can also take away part of the heat gathered on the top surface of the process chamber 110 by heat exchange, thereby reducing the temperature of the top surface of the process chamber 110 and further reducing the probability of softening collapse of the top surface of the process chamber 110. FIG. 6 shows a comparison between the process chamber 110 disclosed in the embodiments of the present application and a process chamber in the related art. After a process lasting for a predetermined time, the process chamber in the related art deforms obviously after softening collapse, and the height of the dome is obviously lower than that of the process chamber 110 disclosed in the embodiments of the present application. Therefore, the process chamber 110 disclosed in the embodiments of the present application has strong thermal stability and is not prone to deformation and collapse.

[0029] In the related art, the process gas enters the process chamber through the gas inlet pipe at the bottom of the process chamber and diffuses to the top of the process chamber. Since the process gas at the bottom of the process chamber is sufficient, the film thickness uniformity of the lower layer of wafers located at the bottom of the process chamber can be ensured. When the process gas flows to the top of the process chamber, the diffusion uniformity is poor due to the influence of factors such as gravity and process gas concentration, which leads to poor film thickness uniformity of the upper layer of wafers close to the top of the process chamber.

[0030] For the above-mentioned situation, the embodiments of the present application adopt the gas inlet mode in which the supply pipeline 130 and the shunt pipeline 120 cooperate, which can solve the above-mentioned problems to a certain extent. Specifically, the arrows in FIG. 1 show the flow direction of the process gas in the process chamber 110. The shunt pipeline 120 can be provided with gas injection holes 121 at the part located on the top surface of the process chamber 110 and the part located on the side surface of the process chamber 110. When the supply pipeline 130 introduces the process gas into the shunt pipeline 120, the process gas is injected into the process chamber 110 from the gas injection holes 121 in the direction shown by the arrows in FIG. 1, so that the process gas can uniformly diffuse to the edge region and the central region of the wafer 170, thereby improving the in-plane film thickness uniformity of the wafer 170.

[0031] FIG. 7 shows the in-plane film thickness range of the wafer 170 at different positions in the process chamber 110. The smaller the film thickness range, the better the film thickness uniformity of the wafer 170. The solid line in the figure shows the in-plane film thickness range of the wafer in the related art. As can be seen from the slope of the line, the in-plane film thickness range of the wafer is large, and correspondingly, the film thickness uniformity of the wafer is poor. The dashed line in the figure shows the in-plane film thickness range of the wafer 170 in the embodiments of the present application. As can be seen from the slope of the line, the in-plane film thickness range of the wafer 170 is small, and correspondingly, the film thickness uniformity of the wafer 170 is good. Therefore, the gas inlet mode in which the supply pipeline 130 and the shunt pipeline 120 cooperate can obviously improve the film thickness uniformity of the wafer 170.

[0032] In addition, in the related art, the vertical furnace includes a process outer tube and a process inner tube made of quartz material, the process outer tube is assembled with the process inner tube in a sleeved manner, the process inner tube has an open structure at both ends, process gas enters the process inner tube from the gas inlet at the bottom of the process inner tube, and is discharged from the exhaust passage between the process inner tube and the process outer tube after circulation. In order to enable the exhaust passage to be uniformly distributed between the process inner tube and the process outer tube, while avoiding the problem of collision and damage between the process inner tube and the process outer tube, the concentricity requirement of the assembly of the process inner tube and the process outer tube is relatively high. In the embodiment of the present application, the process chamber 110 can be regarded as the process outer tube in the related art, the gas inlet mode of the combination of the supply pipe 130 and the distribution pipe 120 can replace the process inner tube in the related art, and the wafer 170 can directly perform the related process in the process chamber 110, so that when assembled, the concentricity problem of the process chamber 110, the distribution pipe 120 and the supply pipe 130 does not need to be considered, thereby simplifying the installation steps, reducing the installation difficulty, shortening the installation time, and further improving the stability of the process chamber 110.

[0033] As described above, the semiconductor process equipment disclosed in the embodiment of the present application improves the related art, by attaching the distribution pipe 120 to the top surface of the process chamber 110, on the one hand, the structure of the top surface of the process chamber 110 can be strengthened, so that the top surface is not prone to softening and collapse; on the other hand, the process gas flowing in the distribution pipe 120 can also take away part of the heat of the top surface, thereby reducing the temperature of the top surface and further reducing the probability of softening and collapse of the top surface; in addition, the gas inlet mode of the combination of the supply pipe 130 and the distribution pipe 120 enables the process gas to uniformly diffuse to the edge region and the center region of the wafer 170, thereby improving the uniformity of the in-plane film thickness of the wafer 170.

[0034] As shown in FIGS. 2-5, the distribution pipe 120 can include a plurality of sub-pipes 122, the sub-pipes 122 are attached to at least the top surface of the process chamber 110, in addition, the sub-pipes 122 can also be attached to the side surface of the process chamber 110. The plurality of sub-pipes 122 are cross-connected and communicate with each other, and can be in a cross shape of a rice character or a cross character, thereby strengthening the structure of the top surface of the process chamber 110. The supply pipe 130 communicates with the plurality of sub-pipes 122, the process gas supplied by the gas supply equipment can be transmitted to the plurality of sub-pipes 122 through the supply pipe 130, and further transmitted to the process chamber 110 through the gas injection holes 121. The length of the sub-pipe 122 is determined by the height of the process chamber 110 and the placement position of the wafer 170 in the process chamber 110, and the length of the sub-pipe 122 can be 800-1200 mm, for example, 800 mm, 1000 mm, 1200 mm, etc.

[0035] As shown in FIGS. 2-4, the sub-pipeline 122 can include a first pipe body 1221 and a second pipe body 1222 in communication with each other. The first pipe body 1221 is arc-shaped, and the curvature of the first pipe body 1221 matches the curvature of the arched top surface of the process chamber 110, so that the first pipe body 1221 can be well fitted with the top surface of the process chamber 110. The second pipe body 1222 can also be installed in a fitted manner, specifically, can be fitted with the side surface of the process chamber 110, which can improve the utilization rate of the internal space of the process chamber 110, and also can improve the structural strength of the side surface of the process chamber 110 to some extent. The first pipe body 1221 and the second pipe body 1222 can be an integral structure, which are formed by heat bending, and the installation mode of the first pipe body 1221 and the second pipe body 1222 with the process chamber 110 can be welding, etc.

[0036] As shown in FIG. 1, the gas injection hole 121 can be provided only on the first pipe body 1221, at this time the process chamber 110 is a top gas inlet, and the flow direction of the process gas is shown by the vertical downward arrow in FIG. 1; the gas injection hole 121 can also be provided only on the second pipe body 1222, at this time the process chamber 110 is a side gas inlet, and the flow direction of the process gas is shown by the horizontal arrow in FIG. 1; the gas injection hole 121 can also be provided on both the first pipe body 1221 and the second pipe body 1222, which can realize top gas inlet and side gas inlet at the same time, and can improve the uniformity of the distribution of the process gas in the process chamber 110, and further improve the uniformity of the film thickness of the wafer 170.

[0037] As shown in FIGS. 2, 4 and 5, in order to avoid the problem of uneven distribution of the process gas supplied by the supply pipeline 130 in the plurality of sub-pipelines 122, the distribution pipeline 120 can further include a flow uniformizing cavity 123, which can also be fitted and installed with the top surface of the process chamber 110, and can be installed by welding, clamping or the like. The plurality of first pipe bodies 1221 can converge at the flow uniformizing cavity 123 and communicate with the flow uniformizing cavity 123. The shape of the flow uniformizing cavity 123 can be spherical, ellipsoidal or the like. The supply pipeline 130 communicates with the flow uniformizing cavity 123, and the process gas supplied by the supply pipeline 130 enters the flow uniformizing cavity 123 and is uniformly distributed to each first pipe body 1221 through the flow uniformizing cavity 123, so that the gas injection amount of the gas injection hole 121 on each first pipe body 1221 is close to equal, thereby improving the uniformity of the distribution of the process gas in the process chamber 110, and further improving the uniformity of the film thickness of the wafer 170.

[0038] As shown in FIG. 2 and FIG. 3, to further improve the structural strength of the top surface of the process chamber 110, the semiconductor process equipment can further include a reinforcing portion 140, which can be made of high-temperature-resistant materials such as quartz and sapphire, and is attached to the top surface of the process chamber 110 and connected to the plurality of sub-pipes 122. The specific connection methods can include clamping, welding, etc. The reinforcing portion 140 can adopt a solid structure, and the shape of the reinforcing portion 140 can be annular, polygonal, etc.

[0039] As shown in FIG. 2 and FIG. 3, the reinforcing portion 140 can include a first annular reinforcing member 141, which is attached to the top surface of the process chamber 110 and connected to the plurality of sub-pipes 122. The shape of the first annular reinforcing member 141 can be circular, elliptical, polygonal, etc.

[0040] As shown in FIG. 2 and FIG. 3, to further improve the structural strength of the top surface of the process chamber 110, the reinforcing portion 140 can further include a second annular reinforcing member 142, which is arranged around the first annular reinforcing member 141 to form a double-reinforced design with the first annular reinforcing member 141. The second annular reinforcing member 142 is attached to the top surface of the process chamber 110 and connected to the plurality of sub-pipes 122. The shape of the second annular reinforcing member 142 can be circular, elliptical, polygonal, etc.

[0041] As shown in FIG. 2, the supply pipe 130 includes a portion outside the process chamber 110 for connecting to the gas supply equipment and a portion extending into the process chamber 110 for connecting to the distribution pipe 120. For the portion of the supply pipe 130 extending into the process chamber 110, it can be attached to the side surface and the top surface of the process chamber 110, which can improve the structural strength of the side surface and the top surface of the process chamber 110 and improve the space utilization inside the process chamber 110. It should be noted that the length of the portion of the supply pipe 130 extending into the process chamber 110 is determined by the height of the process chamber 110, and the length of the supply pipe 130 can be 1000-1500 mm, such as 1000 mm, 1200 mm, 1500 mm, etc.

[0042] As shown in FIG. 1, the supply pipe 130 is provided with a plurality of jet holes 121, and the diameter of the jet holes 121 can be 0.5-1 mm, for example, 0.5 mm, 0.75 mm, 1 mm, etc., which can be selected according to actual process requirements. For the scheme that the first pipe body 1221 and the second pipe body 1222 are both provided with jet holes 121, the distance between adjacent two jet holes 121 provided on the first pipe body 1221 is greater than the distance between adjacent two jet holes 121 provided on the second pipe body 1222, that is, the jet hole 121 provided on the first pipe body 1221 has a smaller density than the jet hole 121 provided on the second pipe body 1222, so that the jet amount of the second pipe body 1222 is greater than that of the first pipe body 1221, thereby forming a gas inlet mode dominated by the second pipe body 1222. As shown in FIG. 1, the horizontal arrow shows the flow direction of the process gas jetted from the second pipe body 1222. The gas inlet mode dominated by the second pipe body 1222 can make the process gas spread to the center area of the wafer 170 as much as possible, thereby improving the uniformity of the film thickness of the wafer 170 in the plane.

[0043] For the first pipe body 1221, the distance between adjacent two jet holes 121 provided on the first pipe body 1221 can be 50-100 mm, for example, 50 mm, 75 mm, 100 mm, etc.; for the second pipe body 1222, the distance between adjacent two jet holes 121 provided on the second pipe body 1222 can be 20-50 mm, for example, 20 mm, 30 mm, 50 mm, etc. The actual distance between the jet holes 121 of the first pipe body 1221 and the second pipe body 1222 and the diameter of the jet holes 121 can be adjusted according to actual process requirements to provide the best process gas flow to the wafer, or different sizes and densities of the jet holes 121 can be designed to meet different process requirements for gas reaction, thereby improving the versatility and flexibility of the equipment, and also beneficial to reduce the difference of the film thickness of the wafer in the plane, and improve the consistency and stability of the wafer process results.

[0044] As shown in FIG. 1, in order to facilitate the installation and fixation of the process chamber 110, the semiconductor process equipment can further include a furnace body 150 and a support frame 160. The furnace body 150 is arranged outside the process chamber 110 and is used to heat the inside of the process chamber 110 and provide certain protection function. The support frame 160 is arranged below the furnace body 150, and the process chamber 110 is connected with the support frame 160 to realize installation and fixation, and the support frame 160 can support the process chamber 110 and the furnace body 150. The support frame 160 is also provided with an exhaust port 161, which is communicated with the bottom of the process chamber 110, and the reacted process gas can be discharged from the process chamber 110 through the exhaust port 161.

[0045] In addition, please continue to refer to Figure 1, below the support frame 160 is further provided with a chamber sealing door 180, in the process state, the chamber sealing door 180 is attached with the support frame 160, plays the role of sealing the process chamber 110. Between the wafer 170 and the chamber sealing door 180 is further provided with a heat preservation barrel 190, the heat preservation barrel 190 can play the role of heat preservation and heat insulation, to improve the thermal efficiency of the process chamber 110.

[0046] The above embodiments of the present application mainly describe the differences between various embodiments. The technical features of the various embodiments can be combined to form more specific embodiments without contradiction. In the interest of brevity, further description is omitted.

[0047] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above specific embodiments. The above specific embodiments are only illustrative, not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the protection scope of the claims.

Claims

1. A semiconductor process apparatus, characterized by, The semiconductor processing equipment comprises a process chamber, a shunt pipeline and a supply pipeline; The bottom of the process chamber is provided with an opening, the shunt pipeline is arranged in the process chamber and at least abuts against the top surface of the process chamber, and the shunt pipeline is provided with a plurality of air injection holes; The supply pipeline extends into the process chamber and communicates with the shunt pipeline, and the supply pipeline is used for supplying process gas to the shunt pipeline so that the process gas is transmitted into the process chamber through the plurality of air injection holes.

2. The semiconductor process apparatus according to claim 1, wherein The shunt pipeline comprises a plurality of sub-pipelines, the sub-pipelines at least abut against the top surface of the process chamber, the plurality of sub-pipelines are arranged in a cross manner and communicate with each other, and the supply pipeline communicates with the plurality of sub-pipelines.

3. The semiconductor process apparatus according to claim 2, wherein The sub-pipeline comprises a first pipe body and a second pipe body which communicate with each other, the first pipe body abuts against the top surface of the process chamber, and the second pipe body abuts against the side surface of the process chamber.

4. The semiconductor process apparatus according to claim 3, wherein At least one of the first pipe body and the second pipe body is provided with a plurality of air injection holes.

5. The semiconductor process apparatus according to claim 3, wherein The shunt pipeline further comprises a uniform flow chamber, the uniform flow chamber abuts against the top surface of the process chamber, the plurality of first pipe bodies converge at the uniform flow chamber and communicate with the uniform flow chamber, and the supply pipeline communicates with the uniform flow chamber so as to supply process gas to the plurality of first pipe bodies through the uniform flow chamber.

6. The semiconductor process apparatus according to claim 2, wherein The semiconductor processing equipment further comprises a reinforcing part, the reinforcing part abuts against the top surface of the process chamber and is connected with the plurality of sub-pipelines respectively.

7. The semiconductor process apparatus according to claim 6, wherein The reinforcing part comprises a first annular reinforcing member, the first annular reinforcing member abuts against the top surface of the process chamber and is connected with the plurality of sub-pipelines respectively.

8. The semiconductor process apparatus according to claim 7, wherein The reinforcing part further comprises a second annular reinforcing member, the second annular reinforcing member is arranged around the first annular reinforcing member, the second annular reinforcing member abuts against the top surface of the process chamber and is connected with the plurality of sub-pipelines respectively.

9. The semiconductor process apparatus according to claim 1, wherein The part of the supply pipeline extending into the process chamber abuts against the side surface and the top surface of the process chamber respectively.

10. The semiconductor process apparatus according to claim 1, wherein The diameter of the air injection hole is greater than or equal to 0.5 mm and less than or equal to 1 mm.

11. The semiconductor process apparatus according to claim 4, wherein The interval between two adjacent air injection holes arranged in the first pipe body is greater than the interval between two adjacent air injection holes arranged in the second pipe body.

12. The semiconductor process apparatus according to claim 4, wherein The interval between two adjacent air injection holes arranged in the first pipe body is greater than or equal to 50 mm and less than or equal to 100 mm.

13. The semiconductor process apparatus according to claim 4, wherein The interval between two adjacent air injection holes arranged in the second pipe body is greater than or equal to 20 mm and less than or equal to 50 mm.

14. The semiconductor process apparatus according to claim 1, wherein The semiconductor processing equipment further comprises a furnace body and a support frame, the support frame is arranged below the furnace body and is used for supporting the furnace body and the process chamber, the process chamber is arranged in the furnace body and is connected with the support frame.

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