Device and setting method

Abstract

Provided is a device comprising: a substrate; a plurality of main heating elements provided on the substrate; a plurality of dummy heating elements provided on the substrate; and a control unit that controls the amount of heat generated by each of the plurality of dummy heating elements. For at least one target position on the substrate, the control unit presets thermal resistance information indicating a first thermal resistance between the target position and each of the main heating elements, and a second thermal resistance between the target position and each of the dummy heating elements. The control unit controls the amount of heat generated by each of the plurality of dummy heating elements on the basis of main heat generation information relating to the amount of heat generated by each of the main heating elements and the thermal resistance information.

Description

Device and Setting Method

[0001] The present invention relates to a device and a setting method.

[0002] Patent Document 1 describes an integrated circuit test device having interlocking control of a thermal system 10 (abstract, etc.). Patent Document 2 describes a temperature control method capable of individually controlling the temperature of a plurality of electronic components (abstract, etc.). Patent Document 3 describes a wavelength variable filter achieving temperature independence with respect to the ambient temperature (abstract, etc.). [Prior Art Documents] [Patent Documents] Patent Document 1: Japanese Patent Application Laid-Open No. 2024-504017 Patent Document 2: Japanese Patent Application Laid-Open No. 2003-078... General Disclosure

[0003] In a first aspect of the present invention, there are provided a substrate, a plurality of main heating elements provided on the substrate, a plurality of dummy heating elements provided on the substrate, and a control unit that controls the calorific value of each of the plurality of dummy heating elements. The control unit has preset heat resistance information indicating a first heat resistance between a target position and each main heating element and a second heat resistance between the target position and each dummy heating element for at least one target position on the substrate. The control unit provides a device that controls the calorific value of each of the plurality of dummy heating elements based on main heating information regarding the calorific value of each main heating element and the heat resistance information.

[0004] In the above device, a target temperature fluctuation value is preset for each target position. The control unit calculates a temperature fluctuation value of each target position due to the heat generation of the main heating element based on the first heat resistance and the calorific value of the main heating element, calculates a difference between the calculated temperature fluctuation value and the target temperature fluctuation value, and may calculate the calorific value of the dummy heating element such that the temperature fluctuation of each target position due to the dummy heating element becomes the calculated difference.

[0005] In the above device, different target temperature fluctuation values may be preset for each target position.

[0006] In any of the above devices, a target temperature rise value for each target position may be preset.

[0007] In the above-described device, the target temperature rise value at at least one target location may be higher than the temperature rise value at that location when each main heating element is operating at its maximum heat output.

[0008] In any of the above devices, the substrate may be a silicon substrate.

[0009] In any of the above devices, the main heating element may include at least one optical element and one electronic element.

[0010] In any of the above devices, the control unit may pre-set a power increase for each dummy heating element relative to a unit temperature fluctuation value in order to vary the average temperature at multiple target locations on the substrate.

[0011] In the above device, the power increase for each dummy heating element may differ.

[0012] In any of the above devices, the substrate may be a single chip.

[0013] In a second aspect of the present invention, a method for setting a control unit in a device according to the first aspect of the present invention is provided, comprising: determining a first thermal resistance from a temperature fluctuation value at a target location detected by heating a main heating element; determining a second thermal resistance from a temperature fluctuation value at a target location detected by heating a dummy heating element; and setting thermal resistance information indicating the first and second thermal resistances for the target location in the control unit.

[0014] In the above setting method, the method may include detecting at least one of the temperature value and temperature fluctuation value from at least one characteristic value of the optical element and electronic element when the main heating element is heated, based on the temperature characteristics of at least one of the optical element and electronic element located at the target position, and detecting at least one of the temperature value and temperature fluctuation value from at least one characteristic value of the optical element and electronic element when the dummy heating element is heated, based on the temperature characteristics of at least one of the optical element and electronic element located at the target position.

[0015] In any of the above setting methods, the maximum amount of heat generated by the dummy heating element may be calculated for each target position in order to achieve the maximum temperature fluctuation value due to the heating of the main heating element.

[0016] In the above setting method, calculating the maximum heat generation of the dummy heating element may include generating a second matrix for each row of the first matrix obtained by multiplying the inverse matrix of the matrix indicating the second thermal resistance by the matrix indicating the first thermal resistance, where the value is maximum when the main heating element has the maximum power, and then calculating the maximum heat generation of the dummy heating element by multiplying the first matrix by the second matrix.

[0017] In any of the above setting methods, calculating the maximum heat generation of the dummy heating element may include replacing cells with negative values ​​to 0 in each row of the first matrix obtained by multiplying the inverse matrix of the matrix showing the second thermal resistance by the matrix showing the first thermal resistance, and then multiplying the replaced first matrix by a condition vector that results in the main heating element having maximum power.

[0018] In any of the above setting methods, the temperature fluctuation values ​​at each target location when the dummy heating element generates maximum heat may be further included as the target temperature fluctuation values.

[0019] In any of the above setting methods, the power increase of each dummy heating element relative to a unit temperature fluctuation value may be calculated in order to vary the average temperature at multiple target locations on the substrate.

[0020] It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. Furthermore, subcombinations of these features may also constitute an invention.

[0021] This shows a schematic diagram of the system 10 according to this embodiment. This shows an example of the configuration of the setting device according to this embodiment. This shows the setting operation flow of the control unit 180 in the device 100 by the setting device. This shows an example of a method for calculating the first thermal resistance. This shows an example of a method for calculating the second thermal resistance. This shows a partial example of a method for calculating the maximum heat generation of the dummy heating element 150. This shows a partial example of a method for calculating the maximum heat generation of the dummy heating element 150. This shows a partial example of a method for calculating the maximum heat generation of the dummy heating element 150. This shows a partial example of a method for calculating the maximum heat generation of the dummy heating element 150. This shows another example of a method for calculating the maximum heat generation of the dummy heating element 150. This shows another example of a method for calculating the maximum heat generation of the dummy heating element 150. This shows an example of a method for calculating the target temperature fluctuation value. This shows an example of a method for calculating the power surcharge. This shows an example of the configuration of the control unit 180 of the device 100. This shows an example of a temperature control flow by the control unit 180. This shows an example of calculating the temperature rise value generated at each target position by the main heating element 140. This shows an example of a method for calculating the power of the dummy heating element 150. Examples of a computer 2200 in which multiple aspects of the present invention may be embodied in whole or in part are shown.

[0022] The present invention will be described below through embodiments, but these embodiments are not intended to limit the scope of the claims. Furthermore, not all combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0023] Figure 1 shows a schematic diagram of the system 10 according to this embodiment. The system 10 comprises a device 100 and a setting device 110. The system 10 controls temperature fluctuations caused by heat generation in each element of the device 100.

[0024] Device 100 has elements that generate heat when power is supplied during operation. Device 100 is, for example, a silicon photonic device. In a silicon photonic device, the sensing sensitivity may double or halve depending on the wavelength when the temperature changes by 10°C, and it is desirable that the temperature of each element inside be controlled to a desired temperature. Device 100 comprises a substrate 130, a plurality of main heating elements 140, a plurality of dummy heating elements 150, a plurality of measuring elements 160, a plurality of circuit elements 170, and a control unit 180.

[0025] The substrate 130 is, for example, a silicon substrate. The substrate 130 may be a single chip made of a silicon substrate. The substrate 130 is, for example, 1 cm square or less, and each element provided on the substrate 130 (at least one of the multiple main heating elements 140, multiple dummy heating elements 150, multiple measuring elements 160, and multiple circuit elements 170 may also be simply referred to as an element) is, for example, 1 mm square or less.

[0026] Multiple main heating elements 140 are provided on or within the substrate 130. The multiple main heating elements 140 generate heat when power is supplied during operation. At least one of the main heating elements 140 may include at least one of a heater, an optical element, and an electronic element. At least one of the main heating elements 140 may be, for example, an optical element or an electronic element used for processing optical signals in a silicon photonics device. At least one optical element may be a ring resonator, a Mach-Zehnder switch, a photodetector, an optical modulator, an optical coupler, or a semiconductor optical amplifier. At least one electronic element may be a diode, a transistor, or a resistor. At least one of the main heating elements 140 may be a load resistor or a thin-film metal heater. In Figure 1, the main heating elements 140a and 140d are heaters provided on a circuit element 170 such as a waveguide, overlapping in the thickness direction of the substrate 130 when viewed from above, and heating the temperature of the circuit element 170 to a target temperature. The main heating element 140b is a heater positioned in contact with or close to the circuit element 170, and heats the temperature of the circuit element 170 to a target temperature. The main heating element 140c is a circuit element such as an optical element or electronic element that generates heat when power is supplied to it.

[0027] Multiple dummy heating elements 150 are provided on or within the substrate 130. The dummy heating elements 150 may include at least one of a heater, an optical element, and an electronic element that generates heat when power is supplied. At least one optical element may be a ring resonator, a Mach-Zehnder switch, a photodetector, an optical modulator, an optical coupler, or a semiconductor optical amplifier. At least one electronic element may be a diode, a transistor, or a resistor. At least one dummy heating element 150 may be a load resistor or a thin-film metal heater. The dummy heating elements 150 may be positioned further away from the main heating element 140 relative to the circuit element 170. The dummy heating elements 150 may be provided for controlling the in-plane temperature of the substrate 130.

[0028] Multiple measuring elements 160 are provided on or within the substrate 130. The measuring elements 160 may be placed at target locations on the substrate 130 and measure the temperature at those locations. The measuring elements 160 may be at least one of a temperature sensor (for example, a thermistor), an optical element, and an electronic element. At least one measuring element 160 may operate as the main heating element 140. The measuring elements 160 may be at least one of an optical element and an electronic element having temperature characteristics, and the temperature may be detected from the characteristic value.

[0029] Multiple circuit elements 170 are provided on or within the substrate 130. Multiple circuit elements 170 may be used in the operation of the device 100 (for example, processing of optical signals in a silicon photonics device). At least one of the multiple circuit elements 170 may be heated to a desired temperature by the main heating element 140. At least one circuit element 170 may be an optical element or an electronic element. At least one optical element may be a ring resonator, a Mach-Zehnder switch, a photodetector, an optical modulator, an optical coupler, or a semiconductor optical amplifier. At least one electronic element may be a diode, a transistor, or a resistor. The circuit elements 170 may generate less heat than the main heating element 140, or not generate any heat at all, when powered or when the device 100 is operating.

[0030] The control unit 180 may be located outside the substrate 130, or it may be provided on or inside the substrate 130. The control unit 180 is connected to a plurality of main heating elements 140, a plurality of dummy heating elements 150, a plurality of measuring elements 160, and a plurality of circuit elements 170, and controls the power supply to each of the plurality of main heating elements 140, a plurality of dummy heating elements 150, a plurality of measuring elements 160, and a plurality of circuit elements 170. The control unit 180 may control a power supply (not shown) that supplies power to the plurality of main heating elements 140, a plurality of dummy heating elements 150, a plurality of measuring elements 160, and a plurality of circuit elements 170. The control unit 180 controls the amount of heat generated in each of the plurality of dummy heating elements 150. For at least one target location on the substrate 130, the control unit 180 has pre-set thermal resistance information indicating the thermal resistance between the target location and each main heating element 140, and the thermal resistance between the target location and each dummy heating element 150. The control unit 180 controls the amount of heat generated at each of the multiple dummy heat-generating elements 150 based on main heat generation information relating to the amount of heat generated at each main heat-generating element 140 and preset thermal resistance information. Here, the amount of heat generated is, for example, the power applied to the element, and so on. The thermal resistance may represent the temperature fluctuation value at each target location corresponding to the amount of heat generated by the element. For example, the thermal resistance is the temperature fluctuation value at the target location per unit power of the power applied to the element.

[0031] The setting device 110 calculates various setting values, including thermal resistance information, and sets them in the control unit 180. The setting device 110 may pre-calculate the setting values ​​and set them in the control unit 180 before the device 100 is put into operation.

[0032] Figure 2 shows a more detailed configuration example of the setting device 110. The setting device 110 includes a power setting unit 200, a temperature acquisition unit 210, a determination unit 220, and an output unit 230.

[0033] The power setting unit 200 is connected to the control unit 180 of the device 100. The power setting unit 200 instructs the device 100 to supply power to at least one of the main heating elements 140 and the dummy heating elements 150. During the measurement acquisition stage for the main heating elements 140, the power setting unit 200 may instruct the device 100 not to supply power to the dummy heating elements 150 while power is being supplied to each main heating element 140. During the measurement acquisition stage for the dummy heating elements 150, the power setting unit 200 may instruct the device 100 not to supply power to the main heating elements 140 while power is being supplied to each dummy heating element 150. The power setting unit 200 may instruct the device 100 to supply power at different power levels for each main heating element 140 (for example, different predetermined upper limits for each main heating element 140). The power setting unit 200 may instruct the dummy heating element 150 to be supplied with a different power (for example, a predetermined upper limit power that differs for each dummy heating element 150).

[0034] The temperature acquisition unit 210 is connected to the measuring elements 160 of the device 100. The temperature acquisition unit 210 acquires the temperature at each target location from a plurality of measuring elements 160. The temperature acquisition unit 210 may acquire temperature fluctuation values, temperature values, or both temperature fluctuation values ​​and temperature values ​​at the target location by supplying power to at least one of the main heating element 140 and the dummy heating element 150. The temperature acquisition unit 210 may acquire temperature fluctuation values ​​at each target location due to the heat generated by the main heating element 140 while supplying power to the main heating element 140 but not the dummy heating element 150. The temperature acquisition unit 210 may acquire temperature fluctuation values ​​at each target location due to the heat generated by the dummy heating element 150 while supplying power to the dummy heating element 150 but not the main heating element 140.

[0035] The determination unit 220 is connected to the power setting unit 200 and the temperature acquisition unit 210. The determination unit 220 may determine various setting values ​​for the device 100. The determination unit 220 may determine a first thermal resistance for the main heating element 140 and a second thermal resistance for the dummy heating element 150. The determination unit 220 may determine the first thermal resistance from the temperature fluctuation value of the target position detected by heating the main heating element 140. For each target position, the determination unit 220 may determine the first thermal resistance by dividing the temperature fluctuation value detected by heating only the main heating element 140 by the power of the corresponding main heating element 140. The determination unit 220 may determine the second thermal resistance from the temperature fluctuation value of the target position detected by heating the dummy heating element 150. The determination unit 220 may determine the second thermal resistance as the value obtained by dividing the temperature fluctuation value detected by heating only the dummy heating element 150 at each target position by the power of the corresponding dummy heating element 150.

[0036] The output unit 230 is connected to the determination unit 220. The output unit 230 may set thermal resistance information, including the first thermal resistance for the main heating element 140 and the second thermal resistance for the dummy heating element 150, to the control unit 180 of the device 100. The output unit 230 may also set other setting values ​​determined by the determination unit 220 to the control unit 180.

[0037] Figure 3 shows an example of the setting operation flow of the control unit 180 in the device 100 by the setting device 110. In the setting operation of this embodiment, the setting device 110 sets the setting values ​​of the device 100, which includes four target positions (i.e., four measuring elements 160), four main heating elements 140, and four dummy heating elements 150, as an example.

[0038] In step S300, the setting device 110 measures the temperature of the main heating elements 140. The setting device 110 may use the measuring element 160 to measure the temperature fluctuations at multiple target locations due to the heat generated by each main heating element 140. The setting device 110 may control the ambient temperature to the temperature at which the device 100 is operated (for example, a 25°C condition using a constant temperature bath), and measure the temperature fluctuations at the target locations under n known and independent conditions (for example, one of each main heating element 140 having maximum applied power) at n power application locations (where n is the number of main heating elements 140). The power setting unit 200 may turn on one of the main heating elements 140 at maximum power and turn off the other main heating elements 140 and the dummy heating elements 150, and the temperature acquisition unit 210 may acquire the temperature fluctuations at each target location. The setting device 110 may acquire temperature fluctuation values ​​for all main heating elements 140 at each target location by changing the main heating element 140 to be turned on and then repeating the operation of acquiring temperature fluctuation values.

[0039] The temperature acquisition unit 210 may use an optical element or electronic element located at the target location as the measuring element 160. Based on the temperature characteristics of at least one of the optical element and electronic element (measuring element 160) located at the target location, the temperature acquisition unit 210 may detect at least one of the temperature value and temperature fluctuation value from the characteristic value of at least one of the optical element and electronic element when the main heating element 140 is heated. For example, if the device 100 includes a Mach-Zehnder switch, the temperature acquisition unit 210 may use the Mach-Zehnder switch as the measuring element 160. The temperature acquisition unit 210 may acquire the pass-through loss of the Mach-Zehnder switch as a characteristic value and detect the temperature at the target location where the Mach-Zehnder switch is located from the wavelength at which the pass-through loss is maximum (i.e., the pass-through characteristic is minimum). Alternatively, if the device 100 includes a photodiode, the temperature acquisition unit 210 may use the photodiode as the measuring element 160. Since the dark current of a photodiode increases exponentially with respect to ambient temperature, the temperature acquisition unit 210 may detect the temperature by measuring the dark current of the photodiode. Furthermore, if the device 100 includes a diode, the temperature acquisition unit 210 may use the diode as the measuring element 160. Since the forward voltage of a diode has temperature characteristics, the temperature acquisition unit 210 may detect the temperature by measuring the forward voltage of the diode. Alternatively, the temperature acquisition unit 210 may detect the temperature by measuring the resistance value of a measuring element 160 whose electrical resistance changes with temperature, such as a thermistor.

[0040] The temperature characteristics of the measurement element 160 may be obtained in advance by experiments or the like. For example, with the power of the main heating element 140 and the dummy heating element 150 minimized (e.g., 0 W), in an environment where the ambient temperature is known (e.g., a thermostat), the wavelength characteristics of the insertion loss of the Mach-Zehnder switch are measured using an optical power generator and an optical power measuring device, the dark current and forward effect voltage of the photodiode are measured, or the resistance value of an element whose electrical resistance changes with temperature, such as a thermistor, is measured. The measurement is performed under temperature conditions at sufficient intervals within a sufficient range (e.g., at 20°C intervals from 25°C to 85°C) so that the temperature can be inferred from the measurement results. From the measurement results, the relationship between the wavelength at which the transmission loss of the Mach-Zehnder switch is maximized and the temperature can be approximated by a polynomial, the temperature dependence of the dark current and forward effect voltage of the photodiode can be measured, or the temperature dependence of the resistance value of an element such as a thermistor can be measured. The temperature acquisition unit 210 may detect the temperature of the measurement element 160 using the temperature characteristics obtained in advance by these experiments.

[0041] Here, the maximum power of each main heating element 140 may be a preset value. The plurality of main heating elements 140 may have different preset maximum powers. By generating heat at the maximum power, the temperature fluctuation value becomes larger, and the measurement accuracy of the temperature fluctuation value can be made higher. The temperature acquisition unit 210 outputs the obtained temperature fluctuation values at each target position to the determination unit 220.

[0042] In step S310, the setting device 110 determines the first thermal resistance between each target position and the corresponding main heating element 140 for a plurality of target positions. The determination unit 220 may determine the first thermal resistance from a matrix indicating the temperature fluctuation values at a plurality of target positions and a matrix indicating the applied power to the plurality of main heating elements . Hereinafter, an example of the calculation method will be shown using FIG. 4.

[0043] Figure 4 shows an example of a method for calculating the first thermal resistance. In Figure 4, matrix 400 shows the power applied to the main heating element 140, with rows 1-4 representing the main heating elements 140a-d, and columns 1-4 representing the measurement conditions (applied power) x, y, z, u. Under measurement condition x, only the main heating element 140a generates heat at a maximum power of 3W; under measurement condition y, only the main heating element 140b generates heat at a maximum power of 4W; under measurement condition z, only the main heating element 140c generates heat at a maximum power of 1W; and under measurement condition u, only the main heating element 140d generates heat at a maximum power of 2W. 410 shows the inverse matrix of matrix 400. 420 shows the temperature fluctuation values ​​acquired by the temperature acquisition unit 210 for each target position under each measurement condition, with rows 1-4 representing the target positions pa-pd, and columns 1-4 representing the measurement conditions x, y, z, u.

[0044] Matrix 430 shows the first thermal resistance of the main heating element 140 for each target position, with the first to fourth rows representing the target positions pa-pd and the first to fourth columns representing the main heating elements 140a-d. The determination unit 220 calculates the first thermal resistance of the main heating element 140 by multiplying the matrix of temperature fluctuation values ​​(matrix 420) by the inverse matrix 410 of applied power. In the matrix of first thermal resistance (matrix 430), for example, when the main heating element 140a generates heat with a power of 1W, the temperature of target position pa rises by 1°C, the temperature of target position pb rises by 0.333°C, the temperature of target position pc rises by 0.447°C, and the temperature of target position pd rises by 0.277°C. Note that the numerical values ​​in the matrix are for illustrative purposes only and do not represent actual values. The same applies below.

[0045] In step S320, the setting device 110 measures the temperature of the dummy heating element 150. The setting device 110 may measure the temperature variation values at a plurality of target positions due to the heat generation of each dummy heating element 150. The setting device 110 controls the ambient temperature to the temperature when the device 100 is operated (for example, 25 ° C condition by a thermostat), and the n power application points (n is the number of dummy heating elements 150) are all known and independent n types of conditions (for example, any one of the dummy heating elements 150 has the maximum applied power), and the temperature variation value of the target position may be measured. The power setting unit 200 turns on one of the dummy heating elements 150 at the maximum power, turns off the other dummy heating elements 150 and the main heating element 140, and the temperature acquisition unit 210 may acquire the temperature variation value at each target position. The setting device 110 may repeat the operation of acquiring the temperature variation value after changing the dummy heating element 150 to be turned on, so as to acquire the temperature variation value at each target position for all the dummy heating elements 150.

[0046] The temperature acquisition unit 210 may detect at least one of the temperature value and the temperature variation value from the characteristic values of at least one of the optical element and the electronic element at the target position based on the temperature characteristics of at least one of the optical element and the electronic element at the target position when the dummy heating element 150 generates heat. Similar to step S300, the temperature acquisition unit 210 may use the optical element or the electronic element at the target position as the measurement element 160.

[0047] Here, the maximum power of each dummy heating element 150 may be a preset value. The plurality of dummy heating elements 150 may have different maximum powers preset in advance.By generating heat at the maximum power, the temperature variation value becomes larger, and the measurement accuracy of the temperature variation value can be made higher. The temperature acquisition unit 210 outputs the acquired temperature variation value at each target position to the determination unit 220.

[0048] In step S330, the setting device 110 determines the second thermal resistance between a target position and each dummy heating element 150 for multiple target positions. The determination unit 220 may determine the second thermal resistance from a matrix showing temperature fluctuation values ​​at multiple target positions and a matrix showing the power applied to the multiple dummy heating elements 150. An example of the calculation method is shown below with reference to Figure 5.

[0049] Figure 5 shows an example of a method for calculating the second thermal resistance. In Figure 5, matrix 500 shows the power applied to the dummy heating element 150, the first to fourth rows show the dummy heating elements 150da-dd, and the first to fourth columns show the measurement conditions (applied power) x, y, z, and u. Under measurement condition x, only dummy heating element 150da generates heat at a maximum power of 3W; under measurement condition y, only dummy heating element 150db generates heat at a maximum power of 4W; under measurement condition z, only dummy heating element 150dc generates heat at a maximum power of 1W; and under measurement condition u, only dummy heating element 150dd generates heat at a maximum power of 2W. 510 shows the inverse matrix of matrix 500. The matrix of 520 shows the temperature fluctuation values ​​acquired by the temperature acquisition unit 210 at each target position under each measurement condition, with the first to fourth rows representing the target positions pa-pd, and the first to fourth columns representing the measurement conditions x, y, z, and u.

[0050] Matrix 530 shows the second thermal resistance of the dummy heating element 150 for each target position, with the first to fourth rows representing the target positions pa-pd and the first to fourth columns representing the dummy heating elements 150da-dd. The determination unit 220 calculates the matrix of the second thermal resistance of the dummy heating element 150 (matrix 530) by multiplying the matrix of temperature fluctuation values ​​(matrix 520) by the inverse matrix of applied power (matrix 510). In matrix 530, for example, when the dummy heating element 150da generates heat with an applied power of 1W, the temperature at target position pa rises by 1°C, the temperature at target position pb rises by 0.447°C, the temperature at target position pc rises by 1°C, and the temperature at target position pd rises by 0.447°C.

[0051] In step S340, the determination unit 220 determines the maximum heat output of the dummy heating element 150. The determination unit 220 may calculate the maximum heat output of the dummy heating element 150 for each target position, so that the heat output of the dummy heating element 150 achieves the maximum temperature fluctuation value caused by the heat output of the main heating element 140. The determination unit 220 may calculate the temperature fluctuation value for each target position when only the main heating element 140 is heated by multiple applied voltages. Next, the determination unit 220 may determine the applied power (i.e., maximum heat output) of the dummy heating element 150 that can be achieved by the heat output of only the dummy heating element 150 when all main heating elements 140 are off (applied voltage 0), based on the calculated temperature fluctuation value for each target position. By determining the maximum heat output, the power applied to the dummy heating element 150 can be adjusted based on the maximum heat output so that the temperature at the target position remains constant in an operating state where all elements of the main heating element 140 are not 0. In the operating state, regardless of the applied power to the main heating element 140, the applied power to the dummy heating element 150 is pre-applied to the dummy heating element 150 so that the applied power to the dummy heating element 150 is 0 or greater. For this reason, the target temperature rise value at at least one target location may be higher than the temperature rise value at that location when each main heating element is operating at its maximum heat output.

[0052] Figure 6 shows one example of a method for calculating the maximum heat generated by the dummy heating element 150. The determination unit 220 may calculate the power combinations of the multiple main heating elements 140 by covering all combinations in which each main heating element 140 is either maximum (on) or minimum (off). In Figure 6, the matrix 600 shows the maximum power applied to the main heating element 140 and is the same as the matrix 400 in Figure 4. The matrix 610 shows the combinations of on (1 in the matrix) or off (0 in the matrix) for each main heating element 140. The matrix 620 shows the possible combinations of applied power for the multiple main heating elements 140. The determination unit 220 calculates the matrix 620 by multiplying the matrix 600 by the matrix 610 (matrix 600 × matrix 610).

[0053] Figure 7 shows a partial example of the method for calculating the maximum heat output of the dummy heating element 150. The determination unit 220 calculates the temperature fluctuation value for each target position in all combinations in which the main heating elements 140 are either at their maximum (on) or minimum (off) state. In Figure 7, matrix 700 shows the possible combinations of applied power for the multiple main heating elements 140, and is similar to matrix 620 in Figure 6. Matrix 710 shows the first thermal resistance of the main heating element 140 for each target position, and is similar to matrix 430 in Figure 4. Matrix 720 shows the possible combinations of temperature fluctuation values ​​for each target position due to the heat generated by the multiple main heating elements 140. The determination unit 220 calculates matrix 720 by multiplying matrix 710 by matrix 700 (matrix 710 × matrix 700).

[0054] Figure 8 shows a partial example of a method for calculating the maximum heat output of the dummy heating element 150. The determination unit 220 calculates the applied power of the dummy heating element 150 so that the temperature fluctuation value is the same as the temperature fluctuation value at each target location caused by the main heating element 140 under multiple power conditions. The determination unit 220 may calculate the applied power of the dummy heating element 150 so that the temperature fluctuation value is the same as the temperature fluctuation value at each target location caused by the main heating element 140 alone under multiple power conditions by multiplying the temperature fluctuation value at each target location caused by the main heating element 140 alone by the inverse matrix of the second thermal resistance of the dummy heating element 150.

[0055] In Figure 8, matrix 800 shows the combinations of possible temperature fluctuation values ​​at each target location due to the heat generated by the multiple main heating elements 140, and is similar to matrix 720. Matrix 810 is the inverse matrix of the second thermal resistance of the dummy heating element 150, that is, the inverse matrix of matrix 530. Matrix 820 is the applied power of the dummy heating element 150 that results in the same temperature fluctuation value as the temperature fluctuation value at each target location due to the main heating elements 140 under each power condition. The determination unit 220 calculates matrix 820 by multiplying matrix 810 by matrix 800 (matrix 810 × matrix 800).

[0056] Figure 9 shows a partial example of a method for calculating the maximum heat generation of the dummy heating element 150. The determination unit 220 determines the maximum power (maximum heat generation) among the applied power to the dummy heating element 150 under multiple conditions. The determination unit 220 may extract the maximum power (vector 900) and minimum power (vector 910) of each dummy heating element 150 from a matrix of 820. In this way, the setting device 110 can calculate the maximum heat generation of the dummy heating element 150 by covering all measurement conditions.

[0057] The determination unit 220 may calculate the 820 matrix in a way different from that described above. For example, the determination unit 220 may multiply the inverse matrix of the second thermal resistance of the dummy heating element 150 by the matrix of the first thermal resistance of the main heating element 140 ([530 matrix] －１ A matrix of 430 pixels is used to calculate a matrix of 820 pixels by multiplying the calculated matrix by a matrix of possible combinations of the applied power of the main heating element 140 (a matrix of 620 pixels). However, the method is not limited to these, and a method for further reducing the computational load in calculating the maximum heat output of the dummy heating element 150 is described below.

[0058] Figure 10 shows another example of a method for calculating the maximum heat output of the dummy heating element 150. The determination unit 220 may generate a second matrix for each row of the first matrix obtained by multiplying the inverse matrix of the matrix showing the second thermal resistance by the matrix showing the first thermal resistance, and calculate the maximum heat output of the dummy heating element 150 by multiplying the first matrix by the second matrix. For example, the matrix 1000 in Figure 10 is obtained by the determination unit 220 by multiplying the inverse matrix of the second thermal resistance of the dummy heating element 150 by the matrix of the first thermal resistance of the main heating element 140 ([matrix 530]). －１The first matrix is ​​obtained by multiplying the matrix by 430. The 1010 matrix is ​​the second matrix showing the combination of applied power for the main heating element 140. The 1010 matrix is ​​a matrix in which the maximum power of each main heating element 140 is inserted into the cells corresponding to the maximum and minimum values ​​in the 1000 matrix, and the other cells are set to 0. For example, in the 1010 matrix, for the main heating element 140a, the maximum power of 3 is inserted into cells x and u corresponding to the cells with the maximum value of 1.268 and the minimum value of -0.07 in the 1000 matrix. The 1020 matrix shows the maximum power of each dummy heating element 150. The determination unit 220 can calculate the 1020 matrix by multiplying the 1000 matrix by the 1010 matrix. In this embodiment, in order to calculate the maximum heat generation of the dummy heating element 150, the amount of calculation can be reduced by using the 1010 matrix without covering all combinations of conditions. Furthermore, the determination unit 220 can also calculate the minimum applied power by multiplying a matrix of 1000 by a matrix of 1010.

[0059] Figure 11 shows another example of a method for calculating the maximum heat output of the dummy heating element 150. The determination unit 220 may replace cells with negative values ​​in each row of the first matrix obtained by multiplying the inverse matrix of the matrix showing the second thermal resistance by the matrix showing the first thermal resistance, and then multiply the resulting first matrix by a condition vector that results in the main heating element 140 having maximum power. For example, the matrix 1100 in Figure 11 is the matrix obtained by replacing cells with negative values ​​in each row of the first matrix 1000 with 0. The matrix 1110 is a condition vector that shows combinations of maximum powers for multiple main heating elements 140. As an example, in the matrix 1110, the main heating element 140a has a maximum power of 3. The matrix 1120 shows the maximum power for each dummy heating element 150. The determination unit 220 can calculate the matrix 1120 by multiplying the matrix 1100 by the matrix 1110. This allows for a reduction in computational complexity when calculating only the maximum heat generated by each dummy heating element 150.

[0060] In step S350, the determination unit 220 calculates the target temperature fluctuation value for each target location. The determination unit 220 may calculate the target temperature fluctuation value as the temperature fluctuation value for each target location when the dummy heating element 150 goes from an applied power of 0 to its maximum heat output (maximum power). The determination unit 220 may calculate the target temperature fluctuation value from the maximum heat output of the dummy heating element 150 calculated in step S340. The determination unit 220 may calculate the target temperature fluctuation value at each target location by multiplying the maximum power of the dummy heating element 150 by the second thermal resistance. The target temperature fluctuation value may be different for each target location. The target temperature rise value for at least one target location may be higher than the temperature rise value for that target location when each main heating element 140 is operating at its maximum heat output. As a result, the overall power consumption increases, but the power of the dummy heating element 150 becomes negative, i.e., there is no need to perform cooling by the dummy heating element 150, and temperature control becomes simpler.

[0061] Figure 12 shows an example of a method for calculating the target temperature fluctuation value. The matrix 1200 in Figure 12 is the matrix of the second thermal resistance (for example, the matrix 530 in Figure 5). The matrix 1210 is a matrix showing the maximum power of each dummy heating element 150 (matrix 900, 1020, or 1120). The matrix 1220 is a matrix showing the target temperature fluctuation value at each target position. The determination unit 220 can calculate the matrix 1220 by multiplying the matrix 1200 by the matrix 1210.

[0062] Furthermore, the determination unit 220 calculates the power increase for each dummy heating element 150 relative to a unit temperature fluctuation value in order to vary the average temperature at multiple target locations on the substrate 130. The determination unit 220 may calculate the power increase that can be used when the temperature of the entire substrate 130 is varied in the operating state of the device 100. The determination unit 220 may calculate the power increase by multiplying the inverse matrix of the second thermal resistance of the dummy heating element 150 by the vector representing the temperature fluctuation value 1 at each target location. The power increase for each dummy heating element 150 may differ because the amount of heat generated by the dummy heating element 150 and its arrangement relative to the target location are different.

[0063] Figure 13 shows an example of a method for calculating the power surcharge. The matrix of 1300 is the inverse matrix of the second thermal resistance of the dummy heating element 150 ([matrix of 530]). －１ ) The vector 1310 represents a temperature fluctuation value of 1 for each target location. The vector 1320 represents the power increase for each dummy heating element 150. The determination unit 220 may calculate the vector 1320 by multiplying the matrix 1300 by the vector 1310. For example, by setting the power increase for dummy heating element 150da to +0.691W, the power increase for dummy heating element 150db to +0.691W, the power increase for dummy heating element 150dc to 0W, and the power increase for dummy heating element 150dc to 0W, the average temperature of multiple target locations can be increased by 1°C.

[0064] In step S360, the output unit 230 outputs the setting value determined by the determination unit 220 to the control unit 180 for setting. The output unit 230 may set thermal resistance information indicating the first thermal resistance and the second thermal resistance for the target position to the control unit 180. The thermal resistance information may include at least one matrix of the first thermal resistance and the second thermal resistance, or the inverse matrix of said matrix. The thermal resistance information may also include a value that integrates the first thermal resistance and the second thermal resistance (for example, the product of matrices such as the matrix of 1000 in Figure 10). The output unit 230 may further output at least one of the target temperature fluctuation value, maximum heat generation amount, minimum heat generation amount, and the power surcharge amount of the dummy heating element 150, which are determined by the determination unit 220, to the control unit 180 for setting.

[0065] The setting device 110 of this embodiment can set values ​​that enable accurate temperature control of each element in the device 100.

[0066] Figure 14 shows an example of the configuration of the control unit 180 of device 100. The control unit 180 includes a condition acquisition unit 1400, a power calculation unit 1410, and a power supply unit 1420.

[0067] The condition acquisition unit 1400 acquires control values ​​for the operation of the device 100 from an external source such as a user. The condition acquisition unit 1400 may acquire control values ​​including the power applied to the main heating element 140 during operation.

[0068] The power calculation unit 1410 is connected to the setting device 110 and the condition acquisition unit 1400. The power calculation unit 1410 may receive and hold various setting values ​​from the setting device 110. The power calculation unit 1410 may pre-store as setting values ​​at least one of the following before the operation of the device 100: thermal resistance information, target temperature fluctuation value for each target position (for example, target temperature rise value for each target position), power increase for each dummy heating element 150, and the maximum heat generation amount for each of the dummy heating elements 150. The power calculation unit 1410 may calculate the power to be applied to each element based on the control value acquired by the condition acquisition unit 1400 and the setting value set by the setting device 110.

[0069] The power supply unit 1420 is connected to the power calculation unit 1410. The power supply unit 1420 applies the power calculated by the power calculation unit 1410 to each element. The power supply unit 1420 may apply power to each element directly or via a power supply.

[0070] Figure 15 shows an example of the temperature control flow by the control unit 180. In the temperature control flow, first, the temperature of the device 100 is set to the same temperature (e.g., 25°C) as when the setting device 110 determined the set value, using an ambient temperature controller (e.g., a Peltier element and Peltier controller).

[0071] In step S1500, the condition acquisition unit 1400 acquires a control value corresponding to the input from a higher level, such as a user. This control value may be a value for realizing at least one of the measurement conditions, measurement path, and signal level input from a higher level, such as a user. The condition acquisition unit 1400 may acquire main heat information relating to the amount of heat generated by each main heat element 140 as a control value. For example, the condition acquisition unit 1400 may acquire the power applied to each main heat element 140 as main heat information. In this case, the power applied to each of the multiple main heat elements 140 may be different.

[0072] In step S1510, the power calculation unit 1410 calculates the temperature rise value for each target location from the acquired power using a preset value. The power calculation unit 1410 may calculate the temperature fluctuation value for each target location due to the heat generated by the main heating element 140 based on the preset first thermal resistance of the main heating element 140 and the amount of heat generated (for example, the power acquired by the condition acquisition unit 1400). The power calculation unit 1410 may calculate the temperature rise value that occurs at each target location when the power acquired by the condition acquisition unit 1400 is applied to the main heating element 140.

[0073] Figure 16 shows an example of calculating the temperature rise value generated at each target location by the main heating element 140. Matrix 1600 represents the first thermal resistance of the main heating element 140 (matrix 430 in Figure 4). Vector 1610 represents the power vectors applied to each main heating element 140, acquired by the condition acquisition unit 1400. Vector 1620 represents the temperature rise value generated at each target location due only to the heat generated by the main heating element 140 when the dummy heating element 150 is off. The power calculation unit 1410 may calculate vector 1620 by multiplying matrix 1600 by vector 1610.

[0074] In step S1520, the power calculation unit 1410 calculates the amount of heat generated by the dummy heating element 150 using the preset target temperature fluctuation values ​​and the second thermal resistance for each target location. The power calculation unit 1410 may calculate the difference between the temperature fluctuation value calculated in step S1510 and the target temperature fluctuation value, and calculate the amount of heat generated by the dummy heating element 150 such that the temperature fluctuation at each target location caused by the dummy heating element 150 is equal to the calculated difference. The power calculation unit 1410 may calculate the power applied to the dummy heating element 150 by multiplying the difference between the temperature fluctuation value calculated in step S1510 and the target temperature fluctuation value by the inverse matrix of the second thermal resistance.

[0075] Figure 17 shows an example of a method for calculating the power of the dummy heating element 150. The matrix of 1700 is the inverse matrix of the second thermal resistance of the dummy heating element 150 ([matrix of 530]). －１) The vector 1710 shows the value obtained by subtracting the temperature fluctuation value (vector 1620) calculated in step S1510 from the target temperature fluctuation value (vector 1220 in Figure 12) for each target position. The vector 1720 shows the power of the dummy heating element 150 such that each target position has the temperature fluctuation value shown in the matrix 1710. The power calculation unit 1410 may calculate the vector 1720 by multiplying the matrix 1700 by the vector 1710.

[0076] In step S1530, the power supply unit 1420 supplies power to the main heating element 140 and the dummy heating element 150, respectively. The power supply unit 1420 may apply to each main heating element 140 the power (1610 matrix) obtained by the condition acquisition unit 1400, and to each dummy heating element 150 the power (1720 matrix) calculated by the power calculation unit 1410.

[0077] Furthermore, the power supply unit 1420 may receive power from the power calculation unit 1410, which is the sum of the retained power surcharge added to the power of each dummy heating element 150 calculated in step S1520, and use the received power to supply power to each dummy heating element 150. This allows the average temperature of the entire substrate 130 to be increased accurately by the power surcharge corresponding to the increase in average temperature when the average temperature inside the substrate 130 decreases during operation and the average temperature of multiple target locations on the entire substrate 130 is increased to maintain a constant average temperature inside the device 100.

[0078] In the device 100 of this embodiment, the control unit 180 can feedforward control the temperature of each element using preset values ​​such as thermal resistance, thereby enabling accurate control of each element to a desired temperature.

[0079] Furthermore, the device 100 of this embodiment may be applied to semiconductor integrated circuits in general, and may be a device that integrates and packages a combination of components, such as a microwave integrated circuit or a hybrid integrated circuit, or it may be a printed circuit board.

[0080] Furthermore, at least one of the dummy heating elements 150 may be an element capable of both heating and cooling, or an element capable of only cooling (e.g., a Peltier element). In this case, under the condition that the power is negative in the 820 matrix, cooling can be performed by the dummy heating elements 150.

[0081] Furthermore, in this embodiment, we used an example where there are four main heating elements 140, four dummy heating elements 150, and four measuring elements 160 (target positions), and the number of each is equal. However, the number of these elements may be different. For example, if the number of main heating elements 140 is n times the number of measuring elements 160 and dummy heating elements 150 (where n is an integer of 2 or more), the n main heating elements 140 may be treated virtually as one main heating element 140 to calculate power and control the dummy heating elements 150. Also, the device 100 may have more dummy heating elements 150 than the number of measuring elements 160 (target positions), and the device 100 may select some of the multiple dummy heating elements 150 to perform the above-described setpoint calculation and temperature control.

[0082] Various embodiments of the present invention may be described with reference to flowcharts and block diagrams, where a block may represent (1) a stage in a process in which an operation is performed, or (2) a section of a device having the role of performing the operation. Specific stages and sections may be implemented by dedicated circuits, programmable circuits supplied with computer-readable instructions stored on a computer-readable medium, and / or processors supplied with computer-readable instructions stored on a computer-readable medium. Dedicated circuits may include digital and / or analog hardware circuits, and may include integrated circuits (ICs) and / or discrete circuits. Programmable circuits may include reconfigurable hardware circuits, including logic AND, logic OR, logic XOR, logic NAND, logic NOR, and other logic operations, memory elements such as flip-flops, registers, field-programmable gate arrays (FPGAs), programmable logic arrays (PLAs), etc.

[0083] Computer-readable media may include any tangible device capable of storing instructions to be executed by a suitable device, and as a result, computer-readable media having instructions stored therein will comprise a product containing instructions that can be executed to create means for performing operations specified in a flowchart or block diagram. Examples of computer-readable media may include electronic storage media, magnetic storage media, optical storage media, electromagnetic storage media, semiconductor storage media, etc. More specific examples of computer-readable media may include floppy disks (registered trademark), diskettes, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), electrically erasable programmable read-only memory (EEPROM), static random access memory (SRAM), compact disk read-only memory (CD-ROM), digital versatile disk (DVD), Blu-ray (registered trademark) disk, memory stick, integrated circuit card, etc.

[0084] Computer-readable instructions may include assembler instructions, instruction set architecture (ISA) instructions, machine instructions, machine-dependent instructions, microcode, firmware instructions, state setting data, or source code or object code written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Smalltalk®, Java®, C++, and conventional procedural programming languages ​​such as the C programming language or similar programming languages.

[0085] Computer-readable instructions may be provided locally or via a wide area network (WAN) such as a local area network (LAN) or the Internet to the processor or programmable circuit of a programmable data processing device such as a general-purpose computer, a special-purpose computer, or another computer, and the computer-readable instructions may be executed to create means for performing operations specified in a flowchart or block diagram. Examples of processors include computer processors, processing units, microprocessors, digital signal processors, controllers, microcontrollers, etc.

[0086] Figure 18 shows an example of a computer 2200 in which multiple aspects of the present invention may be embodied in whole or in part. A program installed on the computer 2200 can cause the computer 2200 to function as an operation or one or more sections of an apparatus according to an embodiment of the present invention, or to execute such operation or one or more sections, and / or to cause the computer 2200 to execute a process or a stage of such process according to an embodiment of the present invention. Such a program may be executed by the CPU 2212 to cause the computer 2200 to perform a particular operation associated with some or all of the blocks in the flowcharts and block diagrams described herein.

[0087] The computer 2200 according to this embodiment includes a CPU 2212, RAM 2214, a graphics controller 2216, and a display device 2218, which are interconnected by a host controller 2210. The computer 2200 also includes input / output units such as a communication interface 2222, a hard disk drive 2224, a DVD-ROM drive 2226, and an IC card drive, which are connected to the host controller 2210 via an input / output controller 2220. The computer also includes legacy input / output units such as a ROM 2230 and a keyboard 2242, which are connected to the input / output controller 2220 via an input / output chip 2240.

[0088] The CPU 2212 operates according to programs stored in the ROM 2230 and RAM 2214, thereby controlling each unit. The graphics controller 2216 acquires image data generated by the CPU 2212 from a frame buffer provided in RAM 2214 or from itself, and displays the image data on the display device 2218.

[0089] The communication interface 2222 communicates with other electronic devices via a network. The hard disk drive 2224 stores programs and data used by the CPU 2212 in the computer 2200. The DVD-ROM drive 2226 reads programs or data from the DVD-ROM 2201 and provides them to the hard disk drive 2224 via the RAM 2214. The IC card drive reads programs and data from the IC card and / or writes programs and data to the IC card.

[0090] The ROM 2230 stores boot programs and / or programs that depend on the computer 2200's hardware, which are executed by the computer 2200 when activated. The input / output chip 2240 may also connect various input / output units to the input / output controller 2220 via parallel ports, serial ports, keyboard ports, mouse ports, etc.

[0091] The program is provided on a computer-readable medium such as a DVD-ROM 2201 or an IC card. The program is read from the computer-readable medium and installed on a hard disk drive 2224, RAM 2214, or ROM 2230, which are examples of computer-readable mediums, and executed by the CPU 2212. The information processing described within these programs is read by the computer 2200, resulting in coordination between the program and the various types of hardware resources described above. The apparatus or method may be configured to realize the manipulation or processing of information in accordance with the use of the computer 2200.

[0092] For example, when communication is performed between a computer 2200 and an external device, the CPU 2212 may execute a communication program loaded into the RAM 2214 and, based on the processing described in the communication program, instruct the communication interface 2222 to perform communication processing. Under the control of the CPU 2212, the communication interface 2222 reads transmission data stored in a transmission buffer processing area provided in a recording medium such as the RAM 2214, hard disk drive 2224, DVD-ROM 2201, or IC card, transmits the read transmission data to the network, or writes received data received from the network to a reception buffer processing area provided on the recording medium.

[0093] Furthermore, the CPU 2212 may read all or necessary parts of a file or database stored on an external recording medium such as a hard disk drive 2224, a DVD-ROM drive 2226 (DVD-ROM 2201), or an IC card into the RAM 2214, and perform various types of processing on the data in the RAM 2214. The CPU 2212 then writes the processed data back to the external recording medium.

[0094] Various types of information, such as various types of programs, data, tables, and databases, may be stored on the recording medium and subjected to information processing. The CPU 2212 may perform various types of processing on the data read from the RAM 2214, including various types of operations, information processing, conditional judgments, conditional branching, unconditional branching, information retrieval / replacement, etc., as described throughout this disclosure and specified by the program instruction sequence, and write the results back to the RAM 2214. The CPU 2212 may also retrieve information in files, databases, etc., within the recording medium. For example, if a plurality of entries having attribute values ​​of a first attribute, each associated with an attribute value of a second attribute, are stored in the recording medium, the CPU 2212 may search among the plurality of entries for an entry that matches the condition for which the attribute value of the first attribute is specified, read the attribute value of the second attribute stored in that entry, and thereby obtain the attribute value of the second attribute associated with the first attribute that satisfies a predetermined condition.

[0095] The program or software module described above may be stored on or near computer 2200 on a computer-readable medium. Alternatively, a recording medium such as a hard disk or RAM provided within a server system connected to a dedicated communication network or the Internet can be used as a computer-readable medium, thereby providing the program to computer 2200 via the network.

[0096] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above embodiments. It will be clear from the claims that such modified or improved forms may also be included in the technical scope of the present invention.

[0097] It should be noted that the execution order of operations, procedures, steps, and stages in the devices, systems, programs, and methods shown in the claims, specifications, and drawings is not explicitly stated as "before," "prior to," etc., and that these can be performed in any order unless the output of a previous process is used in a later process. Even if the operation flow in the claims, specifications, and drawings is described using phrases such as "first," "next," etc. for convenience, this does not mean that it is mandatory to perform the operations in that order.

[0098] 10 System 100 Device 110 Setting device 130 Circuit board 140 Main heating element 150 Dummy heating element 160 Measurement element 170 Circuit element 180 Control unit 1400 Condition acquisition unit 1410 Power calculation unit 1420 Power supply unit 2200 Computer 2201 DVD-ROM 2210 Host controller 2212 CPU 2214 RAM 2216 Graphics controller 2218 Display device 2220 Input / output controller 2222 Communication interface 2224 Hard disk drive 2226 DVD-ROM drive 2230 ROM 2240 Input / output chip 2242 Keyboard

Claims

1. A device comprising: a substrate; a plurality of main heating elements provided on the substrate; a plurality of dummy heating elements provided on the substrate; and a control unit for controlling the amount of heat generated in each of the plurality of dummy heating elements, wherein the control unit has pre-set thermal resistance information indicating a first thermal resistance between the target position and each of the main heating elements, and a second thermal resistance between the target position and each of the dummy heating elements for at least one target position on the substrate; and the control unit controls the amount of heat generated in each of the plurality of dummy heating elements based on main heating information relating to the amount of heat generated in each of the main heating elements and the thermal resistance information.

2. The device according to claim 1, wherein the control unit has a target temperature fluctuation value set in advance for each target position, the control unit calculates the temperature fluctuation value at each target position due to the heat generated by the main heating element based on the first thermal resistance and the amount of heat generated by the main heating element, calculates the difference between the calculated temperature fluctuation value and the target temperature fluctuation value, and calculates the amount of heat generated by the dummy heating element such that the temperature fluctuation at each target position due to the dummy heating element is equal to the calculated difference.

3. The device according to claim 2, wherein the control unit has different target temperature fluctuation values ​​set in advance for each target position.

4. The device according to claim 2, wherein the control unit has a target temperature rise value set in advance for each target position.

5. The device according to claim 4, wherein the target temperature rise value of at least one of the target locations is higher than the temperature rise value of the target location when each main heating element is operating at its maximum heat output.

6. The device according to claim 1, wherein the substrate is a silicon substrate.

7. The device according to claim 1, wherein the main heating element includes at least one optical element and an electronic element.

8. The device according to claim 1, wherein the control unit is configured to pre-set a power surcharge for each dummy heating element relative to a unit temperature fluctuation value in order to vary the average temperature at a plurality of target locations on the substrate.

9. The device according to claim 8, wherein the power surcharge for each dummy heating element is different.

10. The device according to claim 1, wherein the substrate is a single chip.

11. A method for setting a control unit in the device according to claim 1, comprising: determining a first thermal resistance from a temperature fluctuation value of the target position detected by heating the main heating element; determining a second thermal resistance from a temperature fluctuation value of the target position detected by heating the dummy heating element; and setting thermal resistance information indicating the first thermal resistance and the second thermal resistance for the target position in the control unit.

12. The setting method according to claim 11, comprising: detecting at least one of a temperature value and a temperature fluctuation value from at least one characteristic value of the optical element and electronic element when the main heating element is heated, based on at least one temperature characteristic of the optical element and electronic element located at the target position; and detecting at least one of a temperature value and a temperature fluctuation value from at least one characteristic value of the optical element and electronic element when the dummy heating element is heated, based on at least one temperature characteristic of the optical element and electronic element located at the target position.

13. The setting method according to claim 11, further comprising calculating the maximum amount of heat generated by the dummy heating element for each target position, so as to achieve the maximum temperature fluctuation value due to the heat generated by the main heating element.

14. The setting method according to claim 13, wherein calculating the maximum heat generation of the dummy heating element includes generating a second matrix for each row of the first matrix obtained by multiplying the inverse matrix of the matrix indicating the second thermal resistance by the matrix indicating the first thermal resistance, and calculating the maximum heat generation of the dummy heating element by multiplying the first matrix by the second matrix.

15. The setting method according to claim 13, wherein the maximum heat generation of the dummy heating element is calculated by multiplying the inverse matrix of the matrix representing the second thermal resistance by the matrix representing the first thermal resistance, replacing cells with negative values ​​in each row of the first matrix with 0, and multiplying the replaced first matrix by a condition vector that results in the main heating element having maximum power.

16. The setting method according to claim 13, further comprising calculating the temperature fluctuation value at each target position when the dummy heating element reaches the maximum heat output as the target temperature fluctuation value.

17. The setting method according to claim 11, which calculates the power increase of each dummy heating element relative to a unit temperature fluctuation value in order to vary the average temperature at multiple target positions on the substrate.

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