Substrate processing method and substrate processing device

Abstract

The present invention reduces the amount of time gas and by-products remain on a film during gas etching. A substrate processing device according to the present invention comprises: a first reservoir portion; a second reservoir portion; a third reservoir portion; a first upstream valve connected upstream from the first reservoir portion and to a supply source of a first etching gas; a second upstream valve connected upstream from the second reservoir portion and to a supply source of a second etching gas; a third upstream valve connected upstream from the third reservoir portion and to a supply source of a first inert gas; a first downstream valve connected downstream from the first reservoir portion and to a gas supply port; a second downstream valve connected downstream from the second reservoir portion and to a gas supply port; a third downstream valve connected downstream from the third reservoir portion portion and to a gas supply port; a first pressure sensor for measuring the pressure in the first reservoir portion; a second pressure sensor for measuring the pressure in the second reservoir portion; and a third pressure sensor for measuring the pressure in the third reservoir portion.

Description

Substrate processing method and substrate processing apparatus

[0001] This disclosure relates to a substrate processing method and a substrate processing apparatus.

[0002] Patent Document 1 discloses a method for etching silicon oxide on the surface of a substrate. This etching method includes the steps of alternately repeating a process of altering silicon oxide to obtain a reaction product and a process of removing at least a portion of the reaction product from the substrate, and the steps of continuing to supply the process gas, and before supplying the process gas, pressurizing the process gas in the flow path and then opening the valve.

[0003] Patent Document 2 discloses an etching method for selectively etching a material containing Si and O. This etching method includes a step of repeatedly supplying a basic gas which is started first, and a second period of supplying a fluorine-containing gas which is started next, such that at least a portion of the second period does not overlap with the first period, and a step of heating and removing the generated reaction product.

[0004] Japanese Patent Publication No. 2022-32323 Japanese Patent Publication No. 2021-180281

[0005] The technology described herein reduces the residual time of gases and by-products remaining on a film during gas etching.

[0006] One aspect of the present disclosure includes a substrate processing chamber having at least one gas supply port, a first gas supply path having a first storage portion, a second gas supply path having a second storage portion, a third gas supply path having a third storage portion, and a first upstream valve having an inlet and an outlet, the inlet of the first upstream valve being connected to a first etching gas supply source, the first etching gas comprising hydrogen fluoride gas, and the outlet of the first upstream valve being connected upstream of the first storage portion; a second upstream valve having an inlet and an outlet, the inlet of the second upstream valve being connected to a second etching gas supply source, the second etching gas comprising ammonia gas, amine gas, fluorine-containing gas, or a combination thereof, the outlet of the second upstream valve being connected upstream of the second storage portion; and a third upstream valve having an inlet and an outlet, the inlet of the third upstream valve being connected to a first inert gas supply source, and the outlet of the third upstream valve being connected upstream of the first storage portion. The system comprises: a third upstream valve connected to the upstream of the third storage portion; a first downstream valve having an inlet and an outlet, the inlet of which is connected to the downstream of the first storage portion and the outlet of which is connected to the at least one gas supply port; a second downstream valve having an inlet and an outlet, the inlet of which is connected to the downstream of the second storage portion and the outlet of which is connected to the at least one gas supply port; a third downstream valve having an inlet and an outlet, the inlet of which is connected to the downstream of the third storage portion and the outlet of which is connected to the at least one gas supply port; a first pressure sensor configured to measure the pressure in the first storage portion; a second pressure sensor configured to measure the pressure in the second storage portion; and a third pressure sensor configured to measure the pressure in the third storage portion.

[0007] According to this disclosure, the residual time of gas and by-products remaining on the film can be shortened during gas etching.

[0008] This is a longitudinal cross-sectional view showing an outline of the configuration of the wafer processing apparatus according to this embodiment. This is a perspective view showing an outline of the configuration of the partition wall according to this embodiment. This is a longitudinal cross-sectional side view showing the film structure formed on the wafer. This is an explanatory diagram of the structure after etching is complete. This is an explanatory diagram of the case where the semiconductor film is etched. This is an explanatory diagram of the case where the semiconductor film is etched. This is an explanatory diagram showing an example of the etching process sequence. This is an explanatory diagram of the state of the semiconductor film. This is a graph showing the damage ratio in the semiconductor film. This is a timing chart showing an example of the sequence when performing inert gas pulling. This is an example of the configuration of a wafer processing apparatus according to another embodiment. This is an explanatory diagram of the etching process of a SiOx film. This is a timing chart showing an example of processing in a wafer processing apparatus according to another embodiment. This is a timing chart showing an example of processing in a wafer processing apparatus according to another embodiment.

[0009] The configuration of the wafer processing apparatus as a substrate processing apparatus according to this embodiment, and the wafer processing method as a substrate processing method, will be described below with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0010] <Wafer Processing Apparatus> Figure 1 is a longitudinal cross-sectional view showing a schematic configuration of the wafer processing apparatus 1 according to this embodiment. In this embodiment, the case in which the wafer processing apparatus 1 is an etching apparatus that etches a material (film) present on the surface of a wafer W, for example, as a substrate, will be described. The film to be etched is not particularly limited, and examples include materials containing Si and O, silicon oxide films, Si films, SiGe films, etc.

[0011] As shown in Figure 1, the wafer processing apparatus 1 includes a chamber 10 that is airtightly configured to house wafers W, a plurality of mounting tables 11a and 11b in this embodiment for placing wafers W within the chamber 10, lifting mechanisms 12a and 12b for independently raising and lowering each mounting table 11a and 11b, a gas supply unit 13 for supplying processing gas from above each mounting table 11a and 11b toward the mounting tables 11a and 11b, inner walls 14a and 14b fixed to the bottom of the chamber 10 and individually surrounding the outside of each mounting table 11a and 11b, a partition wall 15 surrounding the outside of each mounting table 11a and 11b and configured to be able to move up and down, a lifting mechanism 16 for raising and lowering the partition wall 15, and an exhaust unit 17 for exhausting air from inside the chamber 10.

[0012] The chamber 10 is a container, for example, roughly rectangular in shape, made of a metal such as aluminum or stainless steel. The chamber 10 has a roughly rectangular shape in plan view and includes cylindrical side walls 20 with open top and bottom surfaces, a ceiling plate 21 that airtightly covers the top surface of the side walls 20, and a bottom plate 22 that covers the bottom surface of the side walls 20. A sealing member (not shown) is provided between the upper end surface of the side walls 20 and the ceiling plate 21 to maintain airtightness inside the chamber 10. The chamber 10 is also provided with a heater (not shown), and the bottom plate 22 is provided with an insulating material (not shown). Furthermore, the inside of the chamber 10 may be coated with a protective material.

[0013] The mounting stages 11a and 11b are formed in a substantially cylindrical shape and have stages 30a and 30b with mounting surfaces on which wafers W are placed, and support parts 31a and 31b that support the stages 30a and 30b. The upper side of the stages 30a and 30b is configured as an electrostatic chuck, which attracts and holds the wafers W placed on the mounting surfaces of the stages 30a and 30b.

[0014] Inside stages 30a and 30b are temperature control mechanisms 32a and 32b, which adjust the temperature of stages 30a and 30b and the wafers W placed on stages 30a and 30b. Each temperature control mechanism 32a and 32b is provided in each stage 30a and 30b, and independently adjusts the temperature of stages 30a and 30b. Each temperature control mechanism 32a and 32b includes heaters 33a and 33b and flow paths 34a and 34b through which a refrigerant circulates.

[0015] Heaters 33a and 33b are connected to a power supply (not shown). Power is supplied from the power supply to heaters 33a and 33b to regulate the temperature of stages 30a and 30b. For example, the power supply may be common to heaters 33a and 33b, and the power from the power supply to heaters 33a and 33b may be individually controlled by the control unit 100, which will be described later. Alternatively, separate power supplies may be connected to heaters 33a and 33b. The temperature adjustment range of stages 30a and 30b by heaters 33a and 33b is arbitrary, but for example, it is 0.1°C.

[0016] Chillers (not shown) are connected to the flow paths 34a and 34b. Coolant adjusted to the desired temperature is supplied from the chillers to the flow paths 34a and 34b and circulates through them to regulate the temperature of stages 30a and 30b. For example, chillers may be connected to the flow paths 34a and 34b individually.

[0017] Support parts 31a and 31b support the lower parts of stages 30a and 30b. Support parts 31a and 31b have a hollow structure, and a sealed space (not shown) is formed surrounded by the inside of support parts 31a and 31b and the lower surface of stages 30a and 30b. A support pin unit (not shown) that is driven up and down is provided in the sealed space. The support pins of the support pin unit are inserted through holes in stages 30a and 30b and move up and down, thereby transferring wafers W between stages 30a and 30b and a transfer mechanism (not shown) provided outside the wafer processing apparatus 1.

[0018] The lifting mechanisms 12a and 12b are provided on each mounting platform 11a and 11b, allowing the platforms 11a and 11b to be raised and lowered independently. Therefore, the height of the platforms 11a and 11b can be adjusted independently. The height adjustment range of the platforms 11a and 11b by the lifting mechanisms 12a and 12b is arbitrary, but is, for example, 1 mm.

[0019] When the lifting mechanisms 12a and 12b raise the mounting tables 11a and 11b (stages 30a and 30b) to the desired wafer processing position, processing is performed on the wafers W placed on the mounting tables 11a and 11b. When the lifting mechanisms 12a and 12b lower the mounting tables 11a and 11b (stages 30a and 30b) to the wafer transport position, the wafers W, which have been lifted from the upper surfaces of the mounting tables 11a and 11b by the support pin unit described above, become accessible from outside the chamber 10.

[0020] The lifting mechanisms 12a and 12b each have drive units 40a and 40b located outside the chamber 10, and drive shafts 41a and 41b that connect the drive units 40a and 40b to the lower surfaces of the support units 31a and 31b, and extend vertically upward through the bottom plate 22 of the chamber 10. Actuators, for example, are used for the drive units 40a and 40b.

[0021] Inside the chamber 10, bellows 42a and 42b are provided that can extend and retract vertically, surrounding the drive shafts 41a and 41b. The upper ends of the bellows 42a and 42b are airtightly connected to the lower surfaces of the support parts 31a and 31b, and the lower ends of the bellows 42a and 42b are airtightly connected to the upper surface of the bottom plate 22. Therefore, when the mounting tables 11a and 11b are raised and lowered via the drive shafts 41a and 41b, the bellows 42a and 42b extend and retract vertically, thereby maintaining airtightness inside the chamber 10.

[0022] The gas supply unit 13 has a shower head 50 that supplies processing gas to wafers W placed on mounting tables 11a and 11b. The shower head 50 is individually provided on the lower surface of the ceiling plate 21 of the chamber 10, facing each mounting table 11a and 11b. The shower head 50 has, for example, a substantially cylindrical frame 51 with an open bottom and supported on the lower surface of the ceiling plate 21, and a substantially disc-shaped shower plate 52 fitted into the inner surface of the frame 51. It is preferable that the shower plate 52 has a diameter at least larger than the diameter of the wafer W in order to uniformly supply processing gas to the entire surface of the wafer W placed on the mounting tables 11a and 11b. The shower plate 52 is also provided at a predetermined distance from the ceiling portion of the frame 51. As a result, a space 53 is formed between the ceiling portion of the frame 51 and the upper surface of the shower plate 52. The shower plate 52 is also provided with a plurality of openings 54 that penetrate through the shower plate 52 in the thickness direction.

[0023] The wafer processing apparatus 1 is equipped with piping 55a to 55c for supplying gas to the space 53 between the ceiling of the frame 51 and the shower plate 52 via a gas supply pipe 55. The upstream side of piping 55a and 55b is connected to N via a flow rate adjustment mechanism 57. ２ It is connected to the gas supply source 56. The flow rate control mechanism 57 (57a to 57c) consists of a valve and a mass flow controller, and switches the supply and cut-off of gas to the downstream side of the flow path and adjusts the gas flow rate. ２ N supplied from gas source 56 ２ The nitrogen gas serves as both a carrier gas for the etching gas and a purge gas to purge the inside of the chamber 10. ２ While nitrogen gas was used as an example, it is not limited to this, and includes He (helium), Ar (argon), O ２ (Oxygen), H ２ Any inert gas, such as hydrogen, may be used, or different inert gases may be used in combination.

[0024] Pipes 55a and 55b are configured as gas supply paths with a storage section (tank) interposed. That is, valves V1, tank G1, and valve V2 are interposed in pipe 55a in this order toward the upstream side. Also, valves V3, tank G2, and valve V4 are interposed in pipe 55b in this order toward the upstream side. Valve V2 is opened during the period when N ２ gas is supplied to and stored in the storage section, tank G1, and is closed to prevent the gas stored in tank G1 from flowing backward through pipe 55a while valve V1 is open. Similarly, valve V4 is opened during the period when N ２ gas is supplied to and stored in the storage section, tank G2, and is closed to prevent the gas stored in tank G2 from flowing backward through pipe 55b while valve V3 is open. The supply amount of N ２ gas is adjusted by the flow rate adjustment mechanism 57a.

[0025] Pipe 55c is configured as a gas supply path with a storage section (tank) interposed. That is, valves V5, tank G3, and valve V6 are interposed in pipe \alpha in this order toward the upstream side. And upstream of valve V6, pipe 55c branches into two. One of the branched pipes is connected to the HF (hydrogen fluoride) gas supply source 58 as the first etching gas through the flow rate adjustment mechanism 57b, and the other branched pipe is connected to the F ２ (fluorine) gas supply source 59 as the second etching gas through the flow rate adjustment mechanism 57c. Valve V6 is opened during the period when each gas is supplied to and stored in the storage section, tank G3, and is closed to prevent the gas stored in tank G3 from flowing backward through pipe 55c while valve V5 is open. The pressures of the respective gases stored in tanks G1 to G3 may be the same pressure or different pressures.

[0026] Each gas supplied from the gas supply unit 13 is supplied toward the wafer W placed on the mounting tables 11a and 11b through the space 53 and the shower plate 52. Further, the amount of the processing gas supplied to each wafer W can be individually controlled by the flow rate adjustment mechanisms 57 (57a to 57c) provided in the respective pipes 55a to 55c. Further, each gas supplied from the gas supply unit 13 can also be supplied to a plurality of chambers with a gradient by the gas flow rate adjustment mechanism 18. Note that the shower head 50 may be of a post-mix type that can be individually supplied without mixing a plurality of types of processing gases, for example.

[0027] Further, the tanks G1 to G3 may be configured as so-called GPU (Gas pulsing unit), and may be configured to store gas at a high pressure and release it in a short number of seconds. Thereby, the gas supplied from each gas supply source can be quickly diffused in the chamber 10. Pressure sensors S1 to S3 are provided in the respective tanks G1 to G3. The pressure sensors S1 to S3 transmit detection signals regarding the pressure in the tank to the control unit 100 described later. The control unit 100 can detect the pressure in each tank based on the detection signal. Note that the configuration of the storage unit is not limited to the above tanks G1 to G3. That is, the pipes 55a to 55c themselves may be provided with a function of storing each gas. Further, the number of tanks serving as the storage unit is not limited to one for one gas, and a plurality of tanks may be provided.

[0028] Further, in the gas supply path, N ２ (nitrogen) gas, He (helium), Ar (argon), O ２ [[ID=?]] (oxygen), H ２ (hydrogen), or any other inert gas supply pipe 55d may be provided. A valve V0 for switching the supply and cutoff of the gas may be interposed in the pipe 55d, and the inert gas may be purged into the chamber 10 from the inert gas supply source 63 through this pipe 55d.

[0029] The inner walls 14a and 14b have a substantially cylindrical main body 60a and 60b, and flange portions 61a and 61b provided at the upper ends of the main body 60a and 60b and protruding horizontally in the outer circumferential direction of the inner walls 14a and 14b. The inner walls 14a and 14b are arranged so as to individually surround the support portions 31a and 31b of the mounting tables 11a and 11b and the bellows 42a and 42b of the elevating mechanisms 12a and 12b. The inner diameters of the main body 60a and 60b of the inner walls 14a and 14b are set larger than the outer diameters of the support portions 31a and 31b and the bellows 42a and 42b, and an exhaust space V is formed between the inner walls 14a and 14b and the support portions 31a and 31b and the bellows 42a and 42b, respectively.

[0030] A plurality of slits (not shown) are formed at the lower ends of the inner walls 14a and 14b. The slits are exhaust ports through which the processing gas is discharged. In the present embodiment, the slits are formed at substantially equal intervals along the circumferential direction of the inner walls 14a and 14b.

[0031] As shown in FIG. 2, the partition wall 15 has two cylindrical portions 70a and 70b that individually surround the two mounting tables 11a and 11b, an upper flange portion 71 provided at the upper ends of the cylindrical portions 70a and 70b, and a lower flange portion 72 provided at the lower ends of the cylindrical portions 70a and 70b. The inner diameters of the cylindrical portions 70a and 70b are set larger than the outer surfaces of the mounting tables 11a and 11b, and a gap is formed between the cylindrical portions 70a and 70b and the mounting tables 11a and 11b.

[0032] In one embodiment, heaters (not shown) are provided in the cylindrical portions 70a and 70b of the partition wall 15 and are heated to, for example, 100°C to 150°C. By this heating, foreign matter contained in the processing gas can be prevented from adhering to the partition wall 15.

[0033] As shown in Figure 1, a sealing member 73, such as an O-ring, is provided on the upper surface of the upper flange portion 71. The sealing member 73 airtightly seals the space between the upper flange portion 71 and the frame 51 when the partition wall 15 is raised to the wafer processing position by the lifting mechanism 16 and the frame 51 comes into contact with it. A sealing member 73 is provided on each of the mounting tables 11a and 11b. By raising the partition wall 15 and bringing the frame 51 into contact with the sealing member 73, a processing space S is formed, surrounded by the mounting tables 11a and 11b, the partition wall 15, and the shower head 50. The internal pressure of the processing space S may be adjusted to, for example, 0.01 to 10 Torr.

[0034] Furthermore, when the partition wall 15 is lowered to the wafer transport position by the lifting mechanism 16, the wafer W, which has been lifted from the upper surfaces of the mounting tables 11a and 11b by the support pin unit described above, becomes accessible from outside the chamber 10.

[0035] The lifting mechanism 16 raises and lowers the bulkhead 15. The lifting mechanism 16 has a drive unit 80 located outside the chamber 10, a drive shaft 81 connected to the drive unit 80 and extending vertically upward through the bottom plate 22 of the chamber 10, and a plurality of guide shafts 82, the tip of which is connected to the bulkhead 15 and the other end which extends to the outside of the chamber 10. For example, an actuator is used for the drive unit 80. The guide shafts 82 prevent the bulkhead 15 from tilting when the bulkhead 15 is raised and lowered by the drive shaft 81.

[0036] The lower end of the extendable bellows 83 is airtightly connected to the drive shaft 81. The upper end of the bellows 83 is airtightly connected to the lower surface of the bottom plate 22. Therefore, when the drive shaft 81 moves up and down, the bellows 83 extends and retracts along the vertical direction, maintaining an airtight seal inside the chamber 10. A sleeve (not shown), for example, fixed to the bottom plate 22, is provided between the drive shaft 81 and the bellows 83 to function as a guide during the up and down movement.

[0037] A bellows 84, which is extendable and retractable, is connected to the guide shaft 82, similar to the drive shaft 81. The upper end of the bellows 84 is airtightly connected to both the bottom plate 22 and the side wall 20, spanning across both. Therefore, when the guide shaft 82 moves up and down in conjunction with the raising and lowering movement of the partition wall 15 by the drive shaft 81, the bellows 84 extends and retracts along the vertical direction, thereby maintaining airtightness inside the chamber 10. In addition, a sleeve (not shown) that functions as a guide during the raising and lowering movement is provided between the guide shaft 82 and the bellows 84, similar to the case of the drive shaft 81.

[0038] Furthermore, since the upper end of the bellows 84 is the fixed end and the lower end of the bellows 84 connected to the guide shaft 82 is the free end, when negative pressure is created inside the chamber 10, a force acts to compress the bellows 84 vertically due to the pressure difference between the inside and outside of the bellows 84. As a result, the guide shaft 82 connected to the free end of the bellows 84 rises vertically upward as the bellows 84 contracts. This causes the partition wall 15 to rise evenly, ensuring proper contact between the sealing member 73 and the frame 51, thereby ensuring a seal between the partition wall 15 and the frame 51. Similarly, by ensuring proper contact between the sealing member 74 and the flange portions 61a and 61b, a seal between the partition wall 15 and the flange portions 61a and 61b can be ensured. Furthermore, the guide shaft 82 is subjected to downward forces due to the reaction force from the bellows 84, which acts as an elastic member, and the weight of the guide shaft 82 itself. However, the differential pressure acting on the guide shaft 82 can be adjusted by appropriately setting the diameter of the bellows 84.

[0039] The exhaust section 17 includes an exhaust mechanism 90 for exhausting air from inside the chamber 10, and an exhaust port 91 provided on the bottom plate 22 of the chamber 10, outside the partition wall 15. That is, the exhaust port 91 is provided on the bottom plate 22 outside the partition wall 15, at a position that does not overlap with the partition wall 15 in a plan view. The exhaust port 91 is in communication with the exhaust pipe 92.

[0040] These exhaust mechanisms 90, exhaust ports 91, and exhaust pipes 92 are shared by the two processing spaces S. That is, the two processing spaces S communicate with a common exhaust space V formed at the bottom of the chamber 10, and the processed gas flowing out into this exhaust space V is discharged by the exhaust mechanism 90 via the common exhaust pipe 92. The exhaust pipe 92 is provided with a control valve 93 for adjusting the amount of exhaust by the exhaust mechanism 90. In addition, the ceiling plate 21 is provided with a pressure measuring mechanism (not shown) for measuring the pressure in each of the processing spaces S of the mounting platforms 11a and 11b. The opening of the control valve 93 is controlled, for example, based on the measurement value from this pressure measuring mechanism.

[0041] The wafer processing apparatus 1 described above is provided with at least one control unit 100. The control unit 100 processes computer-executable instructions that cause the wafer processing apparatus 1 to perform the various processes described herein. The control unit 100 may be configured to control each element of the wafer processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 100 may be included in the wafer processing apparatus 1. The control unit 100 may include a processing unit, a storage unit, and a communication interface. The control unit 100 is implemented, for example, by a computer. The processing unit may be configured to read a program from the storage unit that provides logic or routines that enable various control operations, and to perform various control operations by executing the read program. This program may be stored in the storage unit in advance, or it may be retrieved via a medium when needed. The retrieved program is stored in the storage unit and read from the storage unit and executed by the processing unit. The medium may be various storage media read by a computer, or it may be a communication line connected to a communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) and may consist of one or more circuits. The storage unit may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the wafer processing device 1 via a communication line such as a LAN (Local Area Network).

[0042] <Film Structure> Next, we will describe the film structure that is the target when etching is performed as an example of wafer processing in the wafer processing apparatus 1 configured as described above. Figure 3 is a longitudinal cross-sectional side view showing a film structure formed on a wafer W. In the figure, two mutually orthogonal directions in the plane direction of the wafer W are shown as the X direction and the Y direction, and the direction in the thickness direction of the wafer W that is orthogonal to each of the X direction and the Y direction is shown as the Z direction. In the following, for example, the X direction may be described as the left-right direction, the Y direction as the front-back direction, and the Z direction as the vertical direction.

[0043] A laminate 215 is provided on a base film 200 formed on a wafer W, consisting of a Si (silicon) film 212, a SiGe (silicon germanium) film 213 corresponding to the first film, and a porous film 214. The SiGe film 213 in this laminate 215 is the film to be etched. Here, an etching gas is used such that the SiGe film 213 is selectively etched among the Si film 212 and the SiGe film 213.

[0044] In Figure 3, only one laminate 215 is shown, but for example, multiple laminates 215 may be provided with spacing between them in the front-to-back and left-to-right directions, and may be arranged in a matrix in a plan view. The porous film 214 is, for example, an insulating film (Low-k film), and examples include silicon-containing films other than SiGe, such as SiOC (carbon-doped silicon oxide) and SiOCN (a film composed of silicon, oxygen, nitrogen, and carbon). This porous film 214 has resistance to etching gas in the etching process according to this embodiment.

[0045] Porous films 214 are formed adjacent to the left and right sides of the SiGe film 213, respectively. Therefore, the direction in which the SiGe film 213 and Si film 212 are aligned and the direction in which the SiGe film 213 and porous films 214 are aligned intersect with each other. If we refer to the SiGe film 213 and the porous films 214 adjacent to it on the left and right as adjacent bodies, then the laminate 215 is composed of multiple adjacent bodies and multiple Si films 212 stacked on top of each other, with the adjacent bodies and Si films 212 positioned alternately when viewed in the vertical direction (Z direction).

[0046] A semiconductor film 216, corresponding to a second layer, is provided on both the left and right sides of the laminate 215 (or between the laminates 215 if there are multiple laminates 215). The laminate 215 and the semiconductor film 216 are adjacent to each other. This semiconductor film 216 is a film that constitutes the source or drain in a semiconductor product manufactured from the wafer W, and is made of, for example, SiGe.

[0047] Furthermore, an upper layer film 217 may be provided on the laminate 215 and the semiconductor film 216. The upper layer film 217 is divided into left and right halves by forming grooves 218 extending in the front-to-back direction at intervals on the left and right sides. The grooves 218 may be provided in a position that overlaps with the SiGe film 213 in the vertical direction. The lower side of the upper layer film 217 may be configured as an indentation 219 by extending toward the space between the laminates 215 arranged in the front-to-back direction. A recess 220 is formed with the indentation 219 and the Si film 212 and SiGe film 213 in the laminate 215 forming side walls, and this recess 220 is connected to the grooves 218. That is, the Si film 212 and SiGe film 213 are exposed on the surface of the wafer W as side walls of the recess 220 and are exposed to etching gas supplied above the wafer W. Furthermore, the semiconductor film 216 is covered by the upper film 217 and is not exposed on the surface of the wafer W.

[0048] The composition of the upper layer 217 is not particularly limited, and a detailed explanation will be omitted, but the upper layer 217 is silicon oxide (SiO ２ The upper layer may be composed of multiple types of films, such as a film or an insulating film made of SiOCN. The upper layer film 217 may also be resistant to etching gases, in which case etching of the semiconductor film 216 from above by the etching gas is prevented.

[0049] For a wafer W containing a film structure configured as shown in Figure 3, etching gas supplied from above the wafer W flows into the recesses 220 via grooves 218 (see dashed arrow in the figure). Then, etching is performed from the side surface on the recess side that constitutes the side wall of each recess of the SiGe film 213 in the front-rear direction, away from the recess 10. Here, the SiGe film 213 is adjacent to the semiconductor film 216 via a porous film 214, and even while the etching of the SiGe film 213 is in progress, the semiconductor film 216 is covered by the upper film 217 and the porous film 214 and is not exposed to the surface of the wafer W.

[0050] With this etching process, only the SiGe film 213 is etched in the film structure shown in Figure 3, and ideally, the film structure after etching is obtained as shown in Figure 4.

[0051] <Wafer Processing Method> Next, as an example of wafer processing in the wafer processing apparatus 1 configured as described above, the etching process according to this embodiment will be explained. As described above, it is ideal to selectively etch the SiGe film 213 of the film structure provided with a laminate 215 composed of a Si film 212, a SiGe film 213, and a porous film 214 (see Figures 3 and 4).

[0052] However, for example, HF gas and F ２ When using a gas mixture as the etching gas and performing an etching process on the SiGe film 213 with the above film structure as the target film, the semiconductor film 216 may be etched. For example, as etching progresses and the porous film 214 is exposed, the etching gas may pass through the porous film 214 and head toward the semiconductor film 216. As described above, the semiconductor film 216 is SiGe, and the etching gas also has etchable properties toward the semiconductor film 216, so there is a risk that the semiconductor film 216 will be etched.

[0053] As the supply time of the etching gas increases, the above-mentioned problems become more pronounced. For example, in Patent Document 1, the processing gas is pressurized in the flow path before being supplied to the processing container. In the wafer processing apparatus 1 according to this embodiment, it is also possible to store the etching gas in the tank G3, pressurize it, and then supply it into the chamber 10. By supplying the etching gas in a short time, etching progress in films other than the film to be etched is suppressed, and the selectivity ratio is improved.

[0054] Furthermore, etching gases and by-products may remain on the Si film 212 and the porous film 214. Such residues may cause excessive etching, or the etching gases may pass through the porous film 214, etching and damaging the semiconductor film 216.

[0055] Figures 5 and 6 illustrate the case where the semiconductor film 216 is etched, with Figure 6 being a magnified view of a portion of the vicinity of the porous film 214 in Figure 5. If a large amount of etching gas and by-products remain on the Si film 212 or the porous film 214, the etching gas penetrates the porous film 214, damaging the semiconductor film 216, as shown in Figure 6. As a result, as shown in Figure 5, multiple damaged areas 230 are formed in the portion where the laminate 215 and the semiconductor film 216 are adjacent.

[0056] Therefore, in the etching process according to this embodiment, the following operations are performed. That is, after supplying the etching gas, an inert gas (for example, N) is supplied to tank G1 or tank G2. ２ The gas is stored and pressurized. At this time, valve V1 or valve V3 is closed. When the pressure in tank G1 or tank G2 reaches a preset gas release pressure, valve V2 or valve V4 is closed and valve V1 or valve V3 is opened. As a result, the pressurized inert gas in tank G1 or tank G2 is released all at once into the processing space S, causing the pressure in the processing space S to rise and the inert gas to rapidly diffuse throughout the processing space S. The opening time of valve V1 or valve V3 (i.e., gas release time) can be arbitrarily determined depending on the processing conditions, equipment configuration, dimensions, etc., but it may be as short as, for example, 0.3 s to 3 s.

[0057] As the inert gas rapidly diffuses throughout the processing space S, it is supplied to the entire surface of the Si film 212 and porous film 214 on the wafer W. Simultaneously, exhaust is performed by the exhaust mechanism 90, which effectively removes etching gas and by-products remaining on the Si film 212 and porous film 214, thereby shortening their residue time. A more specific example of operation (sequence example) in the etching process will be described below.

[0058] <Example of Etching Process Sequence> Figure 7 is an explanatory diagram showing an example of the etching process sequence performed in the wafer processing apparatus 1 according to this embodiment, and is a graph showing the change in internal pressure in the chamber 10 over time. Figure 7(a) is a sequence in which only exhaust (vacuuming by the exhaust unit 17) is performed after the etching process, and Figure 7(b) shows the chamber 10 being purged with N2344 as the purge gas after the etching process. ２ The sequence for purging with gas, Figure 7(c) shows N after etching. ２ The sequence involves purging the gas and then rapidly releasing pressurized inert gas from tank G1 or tank G2 into the processing space S (inert gas pulsing). The etching process involves regulating the pressure in the chamber 10 with inert gas and using etching gas (HF gas, F ２ This may be combined with a short-term release (pulsing) of the gas.

[0059] In the sequence shown in Figure 7(a), after the etching process (etching gas supply), the system is evacuated for a predetermined time, and then the etching process is repeated. In the sequence shown in Figure 7(b), after the etching process, the system is evacuated for a predetermined time. ２ After purging with gas, etching is performed again. In the sequence shown in Figure 7(c), a predetermined time of N is performed after the etching process. ２ Purge with gas and then with an inert gas (here, N ２ After releasing the gas into the processing space S all at once, the etching process is performed again.

[0060] Figure 8 is an explanatory diagram of the state of the semiconductor film 216 when etching is performed in the sequence shown in Figures 7(a) to (c) in a film structure (see Figure 3) provided with a laminate 215 composed of a Si film 212, a SiGe film 213, and a porous film 214. Specifically, it illustrates the damage ratio (S / D damage ratio) in the semiconductor film 216 that constitutes the source or drain. Figure 9 is a graph showing the damage ratio (S / D damage ratio) in the semiconductor film 216 when etching is performed in the sequence shown in Figures 7(a) to (c).

[0061] As shown in Figures 8 and 9, after etching, a predetermined time N ２ Purge with gas and then with an inert gas (here, N ２ By rapidly releasing the inert gas into the processing space S and quickly diffusing the inert gas throughout the processing space S, the damage ratio on the semiconductor film 216 is significantly reduced. This is because the sequence of rapidly releasing the pressurized inert gas into the processing space S and rapidly increasing the pressure in the processing space S effectively removes etching gases and by-products remaining on the Si film 212 and porous film 214.

[0062] The etching process sequence performed in the wafer processing apparatus 1 according to this embodiment is not limited to that shown in Figure 7. Figure 10 shows the sequence after etching with an inert gas (here, N ２ This timing chart shows an example sequence when performing so-called inert gas pulling, in which a gas is released all at once into the processing space S.

[0063] As an example, as shown in Figure 10(a), short-time (here, 0.3 to 3 s) inert gas pulsing may be performed immediately after the etching process, followed by purging or vacuuming with an inert gas for a predetermined time (here, 0.1 to 60 s). This sequence allows for selective etching using the incubation difference. The incubation difference refers to the difference in incubation time, which is the time from when the gas is adsorbed onto the film on the wafer W until the reaction with the film begins.

[0064] Alternatively, as shown in Figure 10(b), after etching, purging with an inert gas or vacuuming may be performed for a predetermined time (here, 0.1 to 60 s), followed by short-time (here, 0.3 to 3 s) inert gas pulling. This sequence can increase the etching rate and effectively remove by-products remaining on the film.

[0065] Furthermore, as shown in Figure 10(c), a sequence may be performed after etching in which purging or vacuuming with an inert gas for a predetermined time (here, 0.1 to 60 s) and short-time (here, 0.3 to 3 s) inert gas pulling are repeated multiple times. This sequence allows for more effective removal of by-products remaining on the film.

[0066] <Effects of the Technology of This Disclosure> As described above, the wafer processing apparatus 1 according to the technology of this disclosure can be used to perform the wafer processing method described above. Furthermore, this wafer processing method can shorten the residual time of etching gas and by-products remaining on the Si film 212 and the porous film 214. Problems such as excessive etching due to such residues, or etching gas passing through the porous film 214 and etching and damaging the semiconductor film 216 can be avoided.

[0067] As explained with reference to Figures 7 to 10, after etching, an inert gas (N ２By employing a sequence that includes so-called inert gas pulling, which involves rapidly releasing gas into the processing space S, the etching rate can be increased and by-products remaining on the film can be effectively removed. In other words, at least one of the gas and by-products adhering to the surface of the wafer W can be removed by inert gas pulling.

[0068] <Other Embodiments> In the embodiments described above, etching was performed on the film structure on the wafer W in the wafer processing apparatus 1. However, the processing performed on the wafer W in the wafer processing apparatus 1 is not limited to this. For example, the technology of this disclosure can also be applied when performing COR processing or film deposition processing on the wafer W in the wafer processing apparatus 1.

[0069] In the above embodiment, the wafer processing apparatus 1 is provided with two mounting tables 11a and 11b, but the number of mounting tables is not limited to this. The wafer processing apparatus 1 may have three or more mounting tables, or for example, four. That is, the number of wafers W processed in the wafer processing apparatus 1 may be three or more. In such a case, the gas supply unit 13 and the exhaust unit 17 may be provided in common to multiple mounting tables. Alternatively, a gas supply unit 13 with the same configuration and an exhaust unit 17 with the same configuration may be provided for each set number of mounting tables.

[0070] Furthermore, various configurations are possible for the wafer processing apparatus 1. For example, in the wafer processing apparatus 1 according to the above embodiment, the mounting tables 11a and 11b on which the wafer W is placed in the chamber 10 are configured to be able to move up and down, but the apparatus is not limited to this. In other words, the mounting tables 11a and 11b on which the wafer W is placed may be fixed in place.

[0071] Furthermore, in the above embodiment, HF gas and F ２The description above describes an etching process using a gas mixture as the etching gas and a SiGe film as the film to be etched, but the etching process is not limited to this. In other words, the configuration of the gas supply unit 13 is not limited to that shown in Figure 1. For example, a SiOx film may be used as the film to be etched, HF gas may be used as the first etching gas as the halogen-containing gas, and NH may be used as the second etching gas. ３ Etching may be performed using at least one of a gas or an amine (e.g., trimethylamine: TMA) gas. In addition to HF, halogen-containing gases include HCl, HBr, HI, and SF. ６ Various gases such as those listed above can be used. Amine gases other than TMA can also be used. Specifically, gases of various amine compounds such as dimethylamine, dimethylethylamine, diethylamine, triethylamine, monotertiarybutylamine, pyrrolidine, and pyridine can be used. In addition, as other specific examples of amine compounds, compounds in which some or all of the C-H bonds of the above compounds are replaced with C-F bonds (e.g., 1,1,1-trifluorodimethylamine) can be used. Furthermore, the same gas may be used as the first etching gas and the second etching gas, or different gases may be used.

[0072] Figure 11 shows an example of the configuration of a wafer processing apparatus 1a according to another embodiment. For example, as shown in Figure 11, the wafer processing apparatus 1 shown in the above embodiment may also be further provided with a pipe 55e as a gas supply pipe. As an example of the configuration, a valve V7, a tank G4, and a valve V8 are interposed in this order toward the upstream side of the pipe 55e. Upstream of the valve V8, a flow rate adjustment mechanism 57d is connected to NH ３ It is connected to the gas and TMA gas supply source 62. Valve V8 supplies NH to the storage tank G4. ３ The valve V7 is open during the period when gas or TMA gas is supplied and stored, and is closed while the valve V7 is open to prevent the gas stored in tank G4 from flowing back through the piping 55e. The pressures of the gases stored in tanks G3, G4, and G1 may be the same or different.

[0073] When an SiOx film is to be etched, the etching process is performed as follows, for example. Figure 12 is an explanatory diagram of the etching process of an SiOx film, showing the etching process of the SiOx film 300 on the surface of a wafer W. As shown in Figure 12, a Si film 310 is formed on the surface of the wafer W, and grooves are formed in the Si film 310. Therefore, a recess 315 that opens in the thickness direction of the wafer W is formed by the Si film 310 and the underlayer film 312 formed below the Si film 310, and the Si film 310 is configured as a side wall forming the recess 315.

[0074] A SiOx film 300 is formed within the recess 315 described above. By using the first etching gas and the second etching gas described above, the SiOx film 300 is selectively etched from the SiOx film 300 and the Si film 310, which are silicon-containing films and exposed on the surface of the wafer W. After etching, the film is processed so that a portion of the SiOx film 300 remains within the recess 315. At this time, at least one of the gas and by-products adhering to the surface of the wafer W is removed by inert gas pulling, allowing for effective selective etching of the SiOx film 300 and the Si film 310.

[0075] Figures 13 and 14 are timing charts showing an example of processing in a wafer processing apparatus 1a according to another embodiment. Figure 13 shows the case where the first etching gas and the second etching gas are supplied separately at different timings, while Figure 14 shows the case where the first etching gas and the second etching gas are supplied simultaneously.

[0076] As shown in Figure 13, after sequentially performing etching with a first etching gas and etching with a second etching gas, purging with an inert gas and short-term inert gas pulling may be repeated multiple times. Below is an example of a specific timing chart. First, at timing T1, the first etching gas supplied into tank G3 is supplied to the processing space by opening valve V5. Next, at timing T2, the second etching gas supplied into tank G3 or G4 is supplied to the processing space by opening valve V5 or V7. After that, at timings T3 to T5, purging of the inert gas into the processing space and short-term inert gas pulling by opening valves V1 and V3 are repeatedly performed. Then, at timings T6 and T7, the supply of the first etching gas and the supply of the second etching gas are performed sequentially in the same manner as above. Subsequently, at timings T8 to T10, purging into the inert gas treatment space and short-term inert gas pulling by opening valves V1 and V3 are repeatedly performed. The etching process is carried out by repeating these steps.

[0077] Furthermore, as shown in Figure 14, the etching process may be performed by simultaneously supplying the first etching gas and the second etching gas, followed by repeated purging of inert gas and short-duration inert gas pulling multiple times. Below is an example of a specific timing chart. First, at timing T1, the first etching gas supplied into tank G3 is supplied to the processing space by opening valve V5, and simultaneously, the second etching gas supplied into tank G3 or G4 is supplied to the processing space by opening valve V5 or V7. Subsequently, at timings T2 to T4, purging of inert gas into the processing space and short-duration inert gas pulling by opening valves V1 and V3 are repeatedly performed. Then, at timings T5 and T6, the first etching gas and the second etching gas are supplied simultaneously in the same manner as described above. Subsequently, at timings T7 to T9, purging of inert gas into the processing space and short-duration inert gas pulling by opening valves V1 and V3 are repeatedly performed. By repeating this process, etching is performed. As shown in the example in Figures 13 and 14, etching effectively removes gases and by-products adhering to the surface of the wafer W.

[0078] Note that the film to be etched may be any Si-containing film other than the above-mentioned SiOx film (oxygen-containing Si film). Specifically, it may be a Si film. When etching the Si film, F is used as the halogen-containing gas. ２ Gas, IF ７ Gas, IF ５ Gas, ClF ３ Gas, SF ６ Gases can be used. Examples of basic gases include NH ３At least one of a gas or an amine (e.g., trimethylamine: TMA) gas can also be used. Specifically, gases of various amine compounds such as dimethylamine, dimethylethylamine, diethylamine, triethylamine, monotertiarybutylamine, pyrrolidine, and pyridine can be used. As another specific example of an amine compound, a compound in which some or all of the C-H bonds of the above compound are replaced by C-F bonds (e.g., 1,1,1-trifluorodimethylamine) can be used.

[0079] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0080] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or instead of the effects described herein.

[0081] The following configuration examples also fall within the technical scope of this disclosure. (1) A substrate processing chamber having at least one gas supply port; a first gas supply path having a first storage portion; a second gas supply path having a second storage portion; a third gas supply path having a third storage portion; a first upstream valve having an inlet and an outlet, the inlet of which is connected to a first etching gas supply source, the first etching gas comprising hydrogen fluoride gas, and the outlet of which is connected to the upstream of the first storage portion; a second upstream valve having an inlet and an outlet, the inlet of which is connected to a second etching gas supply source, the second etching gas comprising ammonia gas, amine gas, fluorine-containing gas or a combination thereof, and the outlet of which is connected to the upstream of the second storage portion; a third upstream valve having an inlet and an outlet, the inlet of which is connected to a first inert gas supply source, and the outlet of which is connected to the upstream of the third storage portion; A substrate processing apparatus comprising: a first downstream valve having an inlet and an outlet, the inlet of the first downstream valve being connected downstream of the first storage portion and the outlet of the first downstream valve being connected to the at least one gas supply port; a second downstream valve having an inlet and an outlet, the inlet of the second downstream valve being connected downstream of the second storage portion and the outlet of the second downstream valve being connected to the at least one gas supply port; a third downstream valve having an inlet and an outlet, the inlet of the third downstream valve being connected downstream of the third storage portion and the outlet of the third downstream valve being connected to the at least one gas supply port; a first pressure sensor configured to measure the pressure in the first storage portion; a second pressure sensor configured to measure the pressure in the second storage portion; and a third pressure sensor configured to measure the pressure in the third storage portion. (2) A fourth gas supply path,The substrate processing apparatus according to (1), further comprising: a valve disposed on the fourth gas supply path, the valve having an inlet and an outlet, the inlet of the valve being connected to a second inert gas supply source, and the outlet of the valve being connected to the at least one gas supply port; (3) The substrate processing apparatus according to (2), further comprising a control unit, the control unit being configured to perform: (a) supplying the first etching gas to the substrate processing chamber; (b) supplying the second etching gas to the substrate processing chamber; (c) supplying the second inert gas to the substrate processing chamber; and (d) supplying the first inert gas to the substrate processing chamber. (4) Step (a) includes: (a1) closing the first downstream valve to increase the pressure in the first storage portion; (a2) closing the first upstream valve when the pressure in the first storage portion reaches a first pressure; (a3) ​​opening the first downstream valve to supply the first etching gas to the substrate processing chamber at the first pressure; Step (b) includes: (b1) closing the second downstream valve to increase the pressure in the second storage portion; (b2) closing the second upstream valve when the pressure in the second storage portion reaches a second pressure; (b3) opening the second downstream valve to supply the second etching gas to the substrate processing chamber at the second pressure; Step (d) includes: (d1) closing the third downstream valve to increase the pressure in the third storage portion; (d2) The step of closing the third upstream valve when the pressure in the third storage portion becomes the third pressure, and (d3) The step of opening the third downstream valve and supplying the first inert gas to the substrate processing chamber at the third pressure, the substrate processing apparatus according to (3). (5) The control unit includes (e) the step of repeating steps (c) and (d), the substrate processing apparatus according to (4). (6) The control unit includes (f) the step of repeating steps (a) to (e), the substrate processing apparatus according to (5). (7) The control unit further comprises the step of (a) supplying the first etching gas to the substrate processing chamber,(b) A substrate processing apparatus according to (1), configured to perform the steps of: (b) supplying the second etching gas to the substrate processing chamber; and (c) supplying the first inert gas to the substrate processing chamber. (8) A substrate processing apparatus according to (7), wherein step (a) includes: (a1) closing the first downstream valve to increase the pressure in the first storage portion; (a2) closing the first upstream valve when the pressure in the first storage portion reaches a first pressure; and (a3) ​​opening the first downstream valve to supply the first etching gas to the substrate processing chamber at a first pressure. (9) The substrate processing apparatus according to (7), wherein step (b) comprises: (b1) closing the second downstream valve to increase the pressure in the second storage portion; (b2) closing the second upstream valve when the pressure in the second storage portion becomes the second pressure; and (b3) opening the second downstream valve to supply the second etching gas to the substrate processing chamber at the second pressure. (10) The substrate processing apparatus according to (7), wherein step (c) comprises: (c1) closing the third downstream valve to increase the pressure in the third storage portion; (c2) closing the third upstream valve when the pressure in the third storage portion becomes the third pressure; and (c3) opening the third downstream valve to supply the first inert gas to the substrate processing chamber at the third pressure. (11) The control unit is a substrate processing apparatus according to any one of (7) to (10), comprising (d) a step of repeating the steps (a) to (c). (12) A substrate processing chamber having at least one gas supply port, a first gas supply path having a first storage portion, a second gas supply path having a second storage portion, a third gas supply path, and a first upstream valve having an inlet and an outlet, wherein the inlet of the first upstream valve is connected to a supply source of a first etching gas, the first etching gas includes hydrogen fluoride gas, and the outlet of the first upstream valve is connected to the upstream of the first storage portion.A second upstream valve having an inlet and an outlet, the inlet of which is connected to a supply source for a second etching gas, the second etching gas comprising ammonia gas, amine gas, fluorine-containing gas, or a combination thereof, and the outlet of which is connected to the upstream of the first storage portion; a third upstream valve having an inlet and an outlet, the inlet of which is connected to a supply source for a first inert gas, the outlet of which is connected to the upstream of the second storage portion; a first downstream valve having an inlet and an outlet, the inlet of which is connected to the downstream of the first storage portion, the outlet of which is connected to the at least one gas supply port; a second downstream valve having an inlet and an outlet, the inlet of which is connected to the downstream of the second storage portion, the outlet of which is connected to the at least one gas supply port; A valve positioned on the third gas supply path, the valve having an inlet and an outlet, the inlet of the valve being connected to a second inert gas supply source, and the outlet of the valve being connected to the at least one gas supply port, a valve, a first pressure sensor configured to measure the pressure in the first storage portion, a second pressure sensor configured to measure the pressure in the second storage portion, and a control unit, the control unit being configured to perform the following steps: (a) supplying the first etching gas to the substrate processing chamber, (b) supplying the second etching gas to the substrate processing chamber, (c) supplying the second inert gas to the substrate processing chamber, and (d) supplying the first inert gas to the substrate processing chamber, wherein step (a) includes: (a1) closing the second upstream valve, (a2) opening the first upstream valve, and (a3) ​​closing the first downstream valve to increase the pressure in the first storage portion. (a4) The step of closing the first upstream valve when the pressure in the first storage portion becomes a first pressure, and (a5) The step of opening the first downstream valve and supplying the first etching gas to the substrate processing chamber at the first pressure,Step (b) includes (b1) closing the first upstream valve, (b2) opening the second upstream valve, (b3) closing the second downstream valve to increase the pressure in the second storage portion, (b4) closing the second upstream valve when the pressure in the second storage portion reaches the second pressure, and (b5) opening the second downstream valve to supply the second etching gas to the substrate processing chamber at the second pressure. Step (d) includes (d1) closing the third downstream valve to increase the pressure in the third storage portion, (d2) closing the third upstream valve when the pressure in the third storage portion reaches the third pressure, and (d3) opening the third downstream valve to supply the first inert gas to the substrate processing chamber at the third pressure. (13) The substrate processing apparatus according to (12), wherein the control unit includes a step of repeating steps (c) and (d). (14) The substrate processing apparatus according to (13), wherein the control unit includes a step of repeating steps (a) to (e). (15) The substrate processing apparatus according to (12), wherein the substrate processing chamber is equipped with a mounting table on which a substrate is placed, and the control unit is configured to execute steps (a) to (d) with the substrate placed on the mounting table. (16) A substrate processing chamber having at least one gas supply port; a first gas supply path having a first storage portion; a second gas supply path having a second storage portion; a third gas supply path having a third storage portion; a first upstream valve having an inlet and an outlet, the inlet of which is connected to a first etching gas supply source, the first etching gas comprising hydrogen fluoride gas, and the outlet of which is connected to the upstream of the first storage portion; a second upstream valve having an inlet and an outlet, the inlet of which is connected to a second etching gas supply source, the second etching gas comprising ammonia gas, amine gas, fluorine-containing gas or a combination thereof, and the outlet of which is connected to the upstream of the second storage portion;A third upstream valve having an inlet and an outlet, the inlet of the third upstream valve being connected to a first inert gas supply source and the outlet of the third upstream valve being connected to the upstream of the third storage portion; a first downstream valve having an inlet and an outlet, the inlet of the first downstream valve being connected to the downstream of the first storage portion and the outlet of the first downstream valve being connected to the at least one gas supply port; a second downstream valve having an inlet and an outlet, the inlet of the second downstream valve being connected to the downstream of the second storage portion and the outlet of the second downstream valve being connected to the at least one gas supply port; a third downstream valve having an inlet and an outlet, the inlet of the third downstream valve being connected to the downstream of the third storage portion and the outlet of the third downstream valve being connected to the at least one gas supply port; a first pressure sensor configured to measure the pressure in the first storage portion; a second pressure sensor configured to measure the pressure in the second storage portion; A substrate processing apparatus comprising: a third pressure sensor configured to measure the pressure in the third storage portion, wherein the substrate processing apparatus comprises: (a) a step of supplying the first etching gas to the substrate processing chamber; (b) a step of supplying the second etching gas to the substrate processing chamber; (c) a step of supplying the second inert gas to the substrate processing chamber; and (d) a step of supplying the first inert gas to the substrate processing chamber. (17) A substrate processing chamber having at least one gas supply port; a first gas supply path having a first storage portion; a second gas supply path having a second storage portion; a third gas supply path; and a first upstream valve having an inlet and an outlet, the inlet of which is connected to a supply source of a first etching gas, the first etching gas containing hydrogen fluoride gas, and the outlet of which is connected to the upstream of the first storage portion.A second upstream valve having an inlet and an outlet, the inlet of which is connected to a supply source for a second etching gas, the second etching gas comprising ammonia gas, amine gas, fluorine-containing gas, or a combination thereof, and the outlet of which is connected to the upstream of the first storage portion; a third upstream valve having an inlet and an outlet, the inlet of which is connected to a supply source for a first inert gas, the outlet of which is connected to the upstream of the second storage portion; a first downstream valve having an inlet and an outlet, the inlet of which is connected to the downstream of the first storage portion, the outlet of which is connected to the at least one gas supply port; a second downstream valve having an inlet and an outlet, the inlet of which is connected to the downstream of the second storage portion, the outlet of which is connected to the at least one gas supply port; A substrate processing apparatus comprising: a valve positioned on the third gas supply path, the valve having an inlet and an outlet, the inlet of the valve being connected to a supply source of a second inert gas, and the outlet of the valve being connected to at least one gas supply port; a first pressure sensor configured to measure the pressure in the first storage portion; and a second pressure sensor configured to measure the pressure in the second storage portion, wherein the apparatus performs the steps of: (a) supplying the first etching gas to the substrate processing chamber; (b) supplying the second etching gas to the substrate processing chamber; (c) supplying the second inert gas to the substrate processing chamber; and (d) supplying the first inert gas to the substrate processing chamber, wherein step (a) includes: (a1) closing the second upstream valve; (a2) opening the first upstream valve; and (a3) ​​closing the first downstream valve to increase the pressure in the first storage portion. (a4) The step of closing the first upstream valve when the pressure in the first storage portion becomes a first pressure, and (a5) The step of opening the first downstream valve and supplying the first etching gas to the substrate processing chamber at the first pressure, wherein step (b) isA substrate processing method comprising: (b1) closing the first upstream valve; (b2) opening the second upstream valve; (b3) closing the second downstream valve to increase the pressure in the second storage portion; (b4) closing the second upstream valve when the pressure in the second storage portion becomes the second pressure; and (b5) opening the second downstream valve to supply the second etching gas to the substrate processing chamber at the second pressure, wherein step (d) comprises: (d1) closing the third downstream valve to increase the pressure in the third storage portion; (d2) closing the third upstream valve when the pressure in the third storage portion becomes the third pressure; and (d3) opening the third downstream valve to supply the first inert gas to the substrate processing chamber at the third pressure.

[0082] Furthermore, the following configuration examples also fall within the technical scope of this disclosure: (101) An etching method comprising the steps of: supplying each of a first etching gas, a second etching gas containing at least one of ammonia gas and amine gas from a gas supply source to a gas supply path; storing the first etching gas, the second etching gas and an inert gas in a storage section provided in the gas supply path and pressurizing the inside of the storage section; opening a valve provided downstream of the storage section in the gas supply path and supplying the first etching gas and the second etching gas stored in the storage section to a chamber containing a substrate and etching a first film formed on the substrate; and supplying the inert gas stored in the storage section to the chamber and desorbing at least one of the gas and by-products adhering to the surface of the substrate with the inert gas. (102) The etching method according to (101), wherein a gas supply path is further provided for supplying an inert gas to the chamber without going through a storage section. (103) A substrate processing method for processing a substrate using a substrate processing apparatus, comprising the steps of: exhausting a chamber containing a substrate on which a first film and a porous film are formed, and a second film is formed by the porous film and not exposed on the surface of the substrate; supplying an etching gas having etching properties for the first film and the second film into the chamber to perform etching; providing a storage section for storing the inert gas in a gas supply passage for supplying an inert gas into the chamber, supplying the inert gas to the gas supply passage with a valve located downstream of the storage section closed, storing the inert gas in the storage section and increasing the internal pressure, and then opening the valve to supply the stored inert gas into the chamber. (104) The substrate processing method according to (103), wherein the first film and the second film are silicon-containing films. (105) The substrate processing method according to (104), wherein the first film is a silicon germanium film.(106) The substrate processing method according to (105), wherein the porous film is interposed between the silicon germanium film and the second film, and is provided adjacent to the silicon germanium film and the second film, and the etching gas selectively etches the silicon germanium film among the silicon germanium film and the second film. (107) The substrate processing method according to any one of (103) to (106), wherein immediately after the step of supplying the etching gas into the chamber to perform etching, the step of supplying the inert gas, which is stored in the storage section and pressurized in the storage section, into the chamber. (108) The substrate processing method according to any one of (103) to (106), wherein after the step of supplying the etching gas into the chamber to perform etching, the step of purging or vacuuming the chamber with inert gas for a predetermined time, and then supplying the inert gas, which is stored in the storage section and pressurized in the storage section, into the chamber. (109) A substrate processing method according to (103) to (106), wherein, after the step of supplying the etching gas into the chamber to perform etching, the steps of purging or vacuuming the chamber with an inert gas for a predetermined time and supplying the inert gas stored in the storage section and pressurized in the storage section into the chamber are repeated multiple times. (110) An etching apparatus comprising: a gas supply path from which each of a first etching gas, a second etching gas containing at least one of ammonia gas and amine gas is supplied from a gas supply source; a storage section provided in the gas supply path, configured to pressurize its interior by storing the first etching gas, the second etching gas and the inert gas; a valve that is opened to supply the first etching gas and the second etching gas stored in the storage section to a chamber containing a substrate; and a valve that is opened to supply the inert gas stored in the storage section to the chamber and to desorb at least one of the gas and by-products adhering to the surface of the substrate with the inert gas. (111) The etching apparatus according to (110), further comprising a gas supply passage for supplying an inert gas to the chamber without passing through a storage section.(112) A substrate processing apparatus for processing a substrate, comprising: a chamber that houses a substrate having a first film and a porous film exposed on the surface of the substrate, and a second film covered by the porous film and not exposed on the surface of the substrate, and whose interior is evacuated; a gas supply passage for supplying an etching gas having etching properties for the first film and the second film into the chamber; a storage section for storing the inert gas in the gas supply passage for supplying the inert gas into the chamber; and a valve located downstream of the storage section in the gas supply passage for supplying the inert gas, which supplies the inert gas to the gas supply passage in a closed state, stores the inert gas in the storage section to increase the internal pressure, and opens to supply the stored inert gas into the chamber. (113) The substrate processing apparatus according to (112), wherein the first film and the second film are silicon-containing films. (114) The substrate processing apparatus according to (113), wherein the first film is a silicon germanium film. (115) The substrate processing apparatus according to (114), wherein the porous film is interposed between the silicon germanium film and the second film, and is provided adjacent to the silicon germanium film and the second film, and the etching gas selectively etches the silicon germanium film among the silicon germanium film and the second film. (116) The substrate processing apparatus according to any one of (112) to (115), wherein the substrate processing apparatus comprises a control unit, and the control unit controls the supply of the inert gas, which is stored in the storage unit and pressurized in the storage unit, into the chamber immediately after the etching gas is supplied into the chamber. (117) The substrate processing apparatus according to any one of (112) to (115), wherein the substrate processing apparatus comprises a control unit, and the control unit controls the supply of the etching gas into the chamber to perform etching, then purging or vacuuming the chamber with an inert gas for a predetermined time, and thereafter supplying the inert gas, which is stored in the storage unit and pressurized in the storage unit, into the chamber.(118) The substrate processing apparatus according to any one of (112) to (115), wherein the substrate processing apparatus comprises a control unit, and the control unit controls the process of supplying the etching gas into the chamber to perform etching, then purging or vacuuming the chamber with an inert gas for a predetermined time, and supplying the inert gas stored in the storage unit and pressurized in the storage unit into the chamber, repeating these steps multiple times.

[0083] 1 Wafer processing apparatus 10 Chamber 13 Gas supply source 55 Gas supply pipe G1-G3 Tank V1-V6 Valve W Wafer

Claims

1. A substrate processing chamber having at least one gas supply port; a first gas supply path having a first storage portion; a second gas supply path having a second storage portion; a third gas supply path having a third storage portion; a first upstream valve having an inlet and an outlet, the inlet of which is connected to a first etching gas supply source, the first etching gas comprising hydrogen fluoride gas, and the outlet of which is connected to the upstream of the first storage portion; a second upstream valve having an inlet and an outlet, the inlet of which is connected to a second etching gas supply source, the second etching gas comprising ammonia gas, amine gas, fluorine-containing gas, or a combination thereof, and the outlet of which is connected to the upstream of the second storage portion; a third upstream valve having an inlet and an outlet, the inlet of which is connected to a first inert gas supply source, and the outlet of which is connected to the upstream of the third storage portion; A substrate processing apparatus comprising: a first downstream valve having an inlet and an outlet, the inlet of the first downstream valve being connected downstream of the first storage portion, and the outlet of the first downstream valve being connected to the at least one gas supply port; a second downstream valve having an inlet and an outlet, the inlet of the second downstream valve being connected downstream of the second storage portion, and the outlet of the second downstream valve being connected to the at least one gas supply port; a third downstream valve having an inlet and an outlet, the inlet of the third downstream valve being connected downstream of the third storage portion, and the outlet of the third downstream valve being connected to the at least one gas supply port; a first pressure sensor configured to measure the pressure in the first storage portion; a second pressure sensor configured to measure the pressure in the second storage portion; and a third pressure sensor configured to measure the pressure in the third storage portion.

2. The substrate processing apparatus according to claim 1, further comprising: a fourth gas supply path; and a valve disposed on the fourth gas supply path, the valve having an inlet and an outlet, the inlet of the valve being connected to a second inert gas supply source, and the outlet of the valve being connected to the at least one gas supply port.

3. The substrate processing apparatus according to claim 2, further comprising a control unit, wherein the control unit is configured to perform: (a) the step of supplying the first etching gas to the substrate processing chamber; (b) the step of supplying the second etching gas to the substrate processing chamber; (c) the step of supplying the second inert gas to the substrate processing chamber; and (d) the step of supplying the first inert gas to the substrate processing chamber.

4. Step (a) includes: (a1) closing the first downstream valve to increase the pressure in the first storage portion; (a2) closing the first upstream valve when the pressure in the first storage portion reaches a first pressure; (a3) ​​opening the first downstream valve to supply the first etching gas to the substrate processing chamber at the first pressure; Step (b) includes: (b1) closing the second downstream valve to increase the pressure in the second storage portion; (b2) closing the second upstream valve when the pressure in the second storage portion reaches a second pressure; (b3) opening the second downstream valve to supply the second etching gas to the substrate processing chamber at the second pressure; Step (d) includes: (d1) closing the third downstream valve to increase the pressure in the third storage portion; The substrate processing apparatus according to claim 3, comprising: (d2) closing the third upstream valve when the pressure in the third storage portion becomes a third pressure; and (d3) opening the third downstream valve to supply the first inert gas to the substrate processing chamber at the third pressure.

5. The substrate processing apparatus according to claim 4, wherein the control unit includes (e) a step of repeating step (c) and step (d).

6. The substrate processing apparatus according to claim 5, wherein the control unit includes (f) a step of repeating steps (a) to (e).

7. The substrate processing apparatus according to claim 1, further comprising a control unit, wherein the control unit is configured to perform the steps of: (a) supplying the first etching gas to the substrate processing chamber; (b) supplying the second etching gas to the substrate processing chamber; and (c) supplying the first inert gas to the substrate processing chamber.

8. The substrate processing apparatus according to claim 7, wherein step (a) includes: (a1) closing the first downstream valve to increase the pressure in the first storage portion; (a2) closing the first upstream valve when the pressure in the first storage portion reaches a first pressure; and (a3) ​​opening the first downstream valve to supply the first etching gas to the substrate processing chamber at the first pressure.

9. The substrate processing apparatus according to claim 7, wherein step (b) includes: (b1) closing the second downstream valve to increase the pressure in the second storage portion; (b2) closing the second upstream valve when the pressure in the second storage portion reaches the second pressure; and (b3) opening the second downstream valve to supply the second etching gas to the substrate processing chamber at the second pressure.

10. The substrate processing apparatus according to claim 7, wherein step (c) comprises: (c1) closing the third downstream valve to increase the pressure in the third storage portion; (c2) closing the third upstream valve when the pressure in the third storage portion reaches the third pressure; and (c3) opening the third downstream valve to supply the first inert gas to the substrate processing chamber at the third pressure.

11. The substrate processing apparatus according to any one of claims 7 to 10, wherein the control unit includes (d) a step of repeating steps (a) to (c).

12. A substrate processing chamber having at least one gas supply port; a first gas supply path having a first storage portion; a second gas supply path having a second storage portion; a third gas supply path; a first upstream valve having an inlet and an outlet, the inlet of which is connected to a first etching gas supply source, the first etching gas comprising hydrogen fluoride gas, and the outlet of which is connected to the upstream of the first storage portion; a second upstream valve having an inlet and an outlet, the inlet of which is connected to a second etching gas supply source, the second etching gas comprising ammonia gas, amine gas, fluorine-containing gas, or a combination thereof, and the outlet of which is connected to the upstream of the first storage portion; a third upstream valve having an inlet and an outlet, the inlet of which is connected to a first inert gas supply source, and the outlet of which is connected to the upstream of the second storage portion; A first downstream valve having an inlet and an outlet, the inlet of the first downstream valve being connected downstream of the first storage portion, and the outlet of the first downstream valve being connected to the at least one gas supply port; a second downstream valve having an inlet and an outlet, the inlet of the second downstream valve being connected downstream of the second storage portion, and the outlet of the second downstream valve being connected to the at least one gas supply port; a valve disposed on the third gas supply path, the valve having an inlet and an outlet, the inlet of the valve being connected to a second inert gas supply source, and the outlet of the valve being connected to the at least one gas supply port; a first pressure sensor configured to measure the pressure in the first storage portion; a second pressure sensor configured to measure the pressure in the second storage portion; and a control unit, the control unit comprising: (a) the step of supplying the first etching gas to the substrate processing chamber; (b) the step of supplying the second etching gas to the substrate processing chamber; (c) The step of supplying the second inert gas to the substrate processing chamber, and (d) The step of supplying the first inert gas to the substrate processing chamber are performed,Step (a) includes: (a1) closing the second upstream valve; (a2) opening the first upstream valve; (a3) ​​closing the first downstream valve to increase the pressure in the first storage portion; (a4) closing the first upstream valve when the pressure in the first storage portion reaches a first pressure; (a5) opening the first downstream valve to supply the first etching gas to the substrate processing chamber at the first pressure; Step (b) includes: (b1) closing the first upstream valve; (b2) opening the second upstream valve; (b3) closing the second downstream valve to increase the pressure in the second storage portion; (b4) closing the second upstream valve when the pressure in the second storage portion reaches a second pressure; (b5) opening the second downstream valve to supply the second etching gas to the substrate processing chamber at the second pressure; A substrate processing apparatus comprising the steps (d) (d1) closing the third downstream valve to increase the pressure in the third storage portion, (d2) closing the third upstream valve when the pressure in the third storage portion reaches the third pressure, and (d3) opening the third downstream valve to supply the first inert gas to the substrate processing chamber at the third pressure.

13. The substrate processing apparatus according to claim 12, wherein the control unit includes (e) a step of repeating step (c) and step (d).

14. The substrate processing apparatus according to claim 13, wherein the control unit includes (f) a step of repeating steps (a) to (e).

15. The substrate processing apparatus according to claim 12, wherein the substrate processing chamber comprises a mounting table on which a substrate is placed, and the control unit is configured to execute steps (a) to (d) with the substrate placed on the mounting table.

16. A substrate processing chamber having at least one gas supply port; a first gas supply path having a first storage portion; a second gas supply path having a second storage portion; a third gas supply path having a third storage portion; a first upstream valve having an inlet and an outlet, the inlet of which is connected to a first etching gas supply source, the first etching gas comprising hydrogen fluoride gas, and the outlet of which is connected to the upstream of the first storage portion; a second upstream valve having an inlet and an outlet, the inlet of which is connected to a second etching gas supply source, the second etching gas comprising ammonia gas, amine gas, fluorine-containing gas, or a combination thereof, and the outlet of which is connected to the upstream of the second storage portion; a third upstream valve having an inlet and an outlet, the inlet of which is connected to a first inert gas supply source, and the outlet of which is connected to the upstream of the third storage portion; A substrate processing apparatus comprising: a first downstream valve having an inlet and an outlet, the inlet of the first downstream valve being connected downstream of the first storage portion, and the outlet of the first downstream valve being connected to the at least one gas supply port; a second downstream valve having an inlet and an outlet, the inlet of the second downstream valve being connected downstream of the second storage portion, and the outlet of the second downstream valve being connected to the at least one gas supply port; a third downstream valve having an inlet and an outlet, the inlet of the third downstream valve being connected downstream of the third storage portion, and the outlet of the third downstream valve being connected to the at least one gas supply port; a first pressure sensor configured to measure the pressure in the first storage portion; a second pressure sensor configured to measure the pressure in the second storage portion; and a third pressure sensor configured to measure the pressure in the third storage portion, wherein the substrate processing apparatus comprises: (a) a step of supplying the first etching gas to the substrate processing chamber, (b) A step of supplying the second etching gas to the substrate processing chamber; (c) A step of supplying the second inert gas to the substrate processing chamber;(d) A substrate processing method comprising the steps of supplying the first inert gas to the substrate processing chamber.

17. A substrate processing chamber having at least one gas supply port; a first gas supply path having a first storage portion; a second gas supply path having a second storage portion; a third gas supply path; a first upstream valve having an inlet and an outlet, the inlet of which is connected to a first etching gas supply source, the first etching gas comprising hydrogen fluoride gas, and the outlet of which is connected to the upstream of the first storage portion; a second upstream valve having an inlet and an outlet, the inlet of which is connected to a second etching gas supply source, the second etching gas comprising ammonia gas, amine gas, fluorine-containing gas, or a combination thereof, and the outlet of which is connected to the upstream of the first storage portion; a third upstream valve having an inlet and an outlet, the inlet of which is connected to a first inert gas supply source, and the outlet of which is connected to the upstream of the second storage portion; A substrate processing apparatus comprising: a first downstream valve having an inlet and an outlet, the inlet of the first downstream valve being connected downstream of the first storage portion, and the outlet of the first downstream valve being connected to the at least one gas supply port; a second downstream valve having an inlet and an outlet, the inlet of the second downstream valve being connected downstream of the second storage portion, and the outlet of the second downstream valve being connected to the at least one gas supply port; a valve disposed on the third gas supply path, the valve having an inlet and an outlet, the inlet of the valve being connected to a second inert gas supply source, and the outlet of the valve being connected to the at least one gas supply port; a first pressure sensor configured to measure the pressure in the first storage portion; and a second pressure sensor configured to measure the pressure in the second storage portion, wherein the substrate processing apparatus comprises: (a) a step of supplying the first etching gas to the substrate processing chamber; and (b) a step of supplying the second etching gas to the substrate processing chamber. (c) The step of supplying the second inert gas to the substrate processing chamber, and (d) The step of supplying the first inert gas to the substrate processing chamber, wherein step (a) is performed(a1) the step of closing the second upstream valve; (a2) the step of opening the first upstream valve; (a3) ​​the step of closing the first downstream valve in order to increase the pressure in the first storage portion; (a4) the step of closing the first upstream valve when the pressure in the first storage portion reaches a first pressure; (a5) the step of opening the first downstream valve and supplying the first etching gas to the substrate processing chamber at the first pressure; and step (b) includes: (b1) the step of closing the first upstream valve; (b2) the step of opening the second upstream valve; (b3) the step of closing the second downstream valve in order to increase the pressure in the second storage portion; (b4) the step of closing the second upstream valve when the pressure in the second storage portion reaches a second pressure; (b5) the step of opening the second downstream valve and supplying the second etching gas to the substrate processing chamber at the second pressure; and step (d) is A substrate processing method comprising: (d1) closing the third downstream valve to increase the pressure in the third storage portion; (d2) closing the third upstream valve when the pressure in the third storage portion reaches the third pressure; and (d3) opening the third downstream valve to supply the first inert gas to the substrate processing chamber at the third pressure.

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