Semiconductor process chamber and semiconductor heat treatment apparatus

Abstract

The present disclosure belongs to the technical field of semiconductors. Provided are a semiconductor process chamber and a semiconductor heat treatment apparatus. The semiconductor process chamber comprises a chamber body and an inner chamber, wherein the inner chamber is arranged in the chamber body; the internal space of the inner chamber serves as a plasma generation region; the inner chamber is of a metal barrier structure; a wafer reaction region is arranged in the chamber body; the plasma generation region is opposite the wafer reaction region; the inner chamber is provided with through holes; and the plasma generation region is in communication with the wafer reaction region by means of the through holes. The semiconductor heat treatment apparatus comprises the semiconductor process chamber and a gas supply pipe, wherein the gas supply pipe is used for supplying process gas to the inner chamber so as to generate plasma. With this configuration, a chamber wall of the inner chamber blocks metal ions from bombarding a chamber wall of the chamber body, so as to prevent the metal ions from diffusing into the wafer reaction region, thereby preventing contamination of a wafer in the wafer reaction region and being conducive to improving the process effect.

Description

Semiconductor process chamber and semiconductor thermal processing equipment TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor, and particularly relates to a semiconductor process chamber and a semiconductor thermal processing equipment. BACKGROUND

[0002] In the field of semiconductor, the chamber body of the semiconductor process chamber is usually made of quartz material, and the inner wall surface of the chamber body is provided with a separation part, the chamber body and the separation part are integrally formed, and the separation part and the cavity wall of the chamber body jointly form a plasma generation cavity. In this way, the reaction gas is excited to form plasma in the plasma generation cavity, and then the plasma enters the wafer reaction zone outside the plasma generation cavity to process the wafer.

[0003] However, the plasma is easily bombarded on the cavity wall of the chamber body and the cavity wall of the separation part during the ionization process, which causes the activity of metal ions in the cavity wall and the surrounding environment to be enhanced, the metal ions are easily penetrated through the separation part and diffused to the wafer reaction zone, which pollutes the wafer in the wafer reaction zone and affects the process effect. SUMMARY

[0004] The purpose of the embodiments of the present application is to provide a semiconductor process chamber and a semiconductor thermal processing equipment, which can solve the problem of poor process effect of the semiconductor process chamber in the related art.

[0005] In a first aspect, the embodiments of the present application provide a semiconductor process chamber, comprising a chamber body and an inner chamber, the inner chamber is arranged in the chamber body, the inner space of the inner chamber is used as a plasma generation zone, and the inner chamber is a metal barrier structure,

[0006] The chamber body is provided with a wafer reaction zone, the plasma generation zone is opposite to the wafer reaction zone, and the inner chamber is provided with a through hole, the plasma generation zone is communicated with the wafer reaction zone through the through hole.

[0007] In a second aspect, the embodiments of the present application also provide a semiconductor thermal processing equipment, comprising the semiconductor process chamber and a gas supply pipeline, the gas supply pipeline is used for providing process gas for the inner chamber to generate plasma.

[0008] In the embodiments of the present application, the inner chamber as the plasma generation zone is separately arranged, the plasma generation zone is isolated from the cavity wall of the chamber body, and the inner chamber is a metal barrier structure, so that the cavity wall of the inner chamber blocks the bombardment of metal ions on the cavity wall of the chamber body. During the generation of plasma in the plasma generation zone, the metal ions will not bombard the cavity wall of the chamber body, which avoids the diffusion of the metal ions to the wafer reaction zone outside the inner chamber, thereby avoiding the pollution of the wafer in the wafer reaction zone, and is beneficial to improving the process effect. Attached Figure Description

[0009] Figure 1 is a cross-sectional view of the semiconductor heat treatment apparatus disclosed in an embodiment of this application;

[0010] Figure 2 is a cross-sectional view of a partial structure in Figure 1;

[0011] Figure 3 is a cross-sectional view of a partial structure of a semiconductor process chamber disclosed in an embodiment of this application;

[0012] Figure 4 is a schematic diagram of the structure of the semiconductor process chamber disclosed in the embodiments of this application;

[0013] Figure 5 is a top view of the semiconductor process chamber disclosed in an embodiment of this application;

[0014] Figure 6 is a side view of the semiconductor process chamber disclosed in an embodiment of this application;

[0015] Figure 7 is a cross-sectional view of the connection between the air duct and the inner chamber disclosed in the embodiment of this application;

[0016] Figure 8 is a cross-sectional view of the mating structure of the air inlet pipe, air guide pipe and chamber body disclosed in the embodiments of this application;

[0017] Figure 9 is a schematic diagram of the structure of the electrode disclosed in the embodiment of this application;

[0018] Figure 10 is a cross-sectional view of a partial structure of the electrode disclosed in an embodiment of this application;

[0019] Figure 11 is a top view of a semiconductor process chamber disclosed in another embodiment of this application.

[0020] Explanation of reference signs: 100-chamber body, b-wafer reaction zone, 110-lateral cavity wall, 111-baffle, 120-protrusion, 120a-first limiting groove, 120b-positioning groove, 121-first positioning block, 121a-third limiting groove, 122-second positioning block, 122a-limiting hole, 101-process pipe, 102-manifold chamber, 102a-bolt, 103-sealing door, 104-seal, 200-inner chamber, a-plasma generation zone, 210-limiting protrusion, 220-first positioning protrusion, 200a-through hole, 200b-opening, 200c-second limiting groove, 300-gas inlet pipe, 300a-annular groove, 310-first gas inlet pipe, 320-second gas inlet pipe, 400-gas guide pipe, 410-first pipe part, 411-gas outlet hole, 420-second pipe part, 430-second positioning protrusion, 500-elastic member, 600-electrode, 610-electrode body, 611-first protruding structure, 612-second protruding structure, 620-height maintaining pipe, 630-protection pipe, 631-third positioning protrusion, 632-clamping groove, 640-annular fixing block, 641-step part, 642-annular pressing part, 642a-tapered surface, 650-heat shrink tube, 700-electrode fixing member, 710-slotted hole, 810-heater, 820-pressing ring, 830-crystal boat, 840-rotation shaft, 850-wafer. DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the present application will be clearly described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art belong to the scope of protection of the present application.

[0022] The terms "first", "second", and the like in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally a category and do not limit the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims means at least one of the connected objects, and the character " / ", generally represents a "or" relationship between the front and rear associated objects.

[0023] The semiconductor process chamber and the semiconductor process equipment provided by the embodiments of the present application will be described in detail below with reference to the drawings and specific embodiments and their application scenarios.

[0024] Referring to FIGS. 1-11, a semiconductor process chamber disclosed by embodiments of the present application includes a chamber body 100 and an inner chamber 200. The chamber body 100 is configured to provide a process environment, and a wafer 850 can be processed in the chamber body 100, which can be a thermal process. The inner chamber 200 is disposed in the chamber body 100, and occupies a portion of the inner space of the chamber body 100. The inner space of the inner chamber 200 is configured as a plasma generation area a, and a process gas is ionized to generate plasma in the inner chamber 200.

[0025] The inner chamber 200 is a metal barrier structure. In some embodiments, the inner chamber 200 can be a one-piece structure or a split structure. The inner chamber 200 can be made of silicon carbide or other materials that can prevent metal ions from penetrating. Embodiments of the present application do not limit the specific material of the inner chamber 200.

[0026] The chamber body 100 is provided with a wafer reaction area b, and the plasma generation area a is opposite to the wafer reaction area b. The inner chamber 200 is provided with a through hole 200a, and the plasma generation area a is in communication with the wafer reaction area b through the through hole 200a. In this way, the plasma generated in the inner chamber 200 can exit the inner chamber 200 through the through hole 200a. Since the plasma generation area a is opposite to the wafer reaction area b, the plasma can enter the wafer reaction area b to process the wafer 850 in the wafer reaction area b. In some embodiments, referring to FIG. 1, the chamber body 100 is provided with a wafer boat 830, and the wafer boat 830 carries a plurality of wafers 850 in the vertical direction of the axis of the chamber body 100. Among the plurality of wafers 850 carried by the wafer boat 830, a portion of the wafers 850 are located in the wafer reaction area b, and another portion of the wafers 850 are located below the wafer reaction area b. The wafers 850 located below the wafer reaction area b are in a heat preservation state.

[0027] In some embodiments, the axis of the chamber body 100 extends in the vertical direction, and the wafer boat 830 carries a plurality of wafers 850 in the vertical direction. The plasma generation area a is opposite to the wafer reaction area b in the horizontal direction. Referring to FIG. 3, the inner chamber 200 is provided with a plurality of through holes 200a spaced apart in the vertical direction. The plasma generation area a is in communication with the wafer reaction area b through the plurality of through holes 200a.

[0028] In the embodiment of the present application, the inner chamber 200 as the plasma generation area a is separately arranged and is isolated from the cavity wall of the chamber body 100, and the inner chamber 200 is a metal barrier structure, so that the cavity wall of the inner chamber 200 blocks the metal ions from bombarding the cavity wall of the chamber body 100. During the process of generating plasma in the plasma generation area a, the metal ions cannot bombard the cavity wall of the chamber body 100, thereby avoiding the diffusion of the metal ions to the wafer reaction area b outside the inner chamber 200, so as to avoid the pollution of the wafer 850 in the wafer reaction area b, and to improve the process effect.

[0029] In some embodiments, as shown in FIG. 1, the chamber body 100 includes a process tube 101, a manifold chamber 102 and a sealing door 103. The manifold chamber 102 is located at the bottom of the process tube 101, and the sealing door 103 is located at the bottom of the manifold chamber 102. The chamber body 100, the manifold chamber 102 and the sealing door 103 jointly form a closed space. A gap between the manifold chamber 102 and the sealing door 103 is provided with a sealing member 104, which can be a sealing ring. The process tube 101 and the manifold chamber 102 can be pressed together by a compression ring 820. The sealing door 103 is provided with a rotating shaft 840, and the rotating shaft 840 is connected with a wafer boat 830. The wafer boat 830 carrying the wafers 850 can rotate around the rotating shaft 840, so that each area of the wafers 850 can be uniformly processed.

[0030] In some embodiments, as shown in FIG. 1 and FIG. 2, the chamber body 100 includes a side cavity wall 110, and the side cavity wall 110 is provided with a protruding portion 120. The protruding portion 120 protrudes from the outer wall surface of the side cavity wall 110, and the protruding portion 120 and the side cavity wall 110 can be an integral molding structure. Further, in some embodiments, the process tube 101 includes the side cavity wall 110. Moreover, the protruding portion 120 forms a mounting area for mounting the inner chamber 200, and the mounting area is in communication with the internal space of the chamber body 100. By adopting the present embodiment, the mounting area for the inner chamber 200 can be reserved separately by arranging the protruding portion 120, so as to avoid the inner chamber 200 from occupying the internal space of the chamber body 100 and affecting other devices in the chamber body 100, and to facilitate the expansion of the wafer reaction area b.

[0031] In further embodiments, the inner chamber 200 is detachably arranged in the mounting area. In addition, in some embodiments, the inner chamber 200 can be connected with the protruding portion 120 by clamping, bolt connection or the like.

[0032] By adopting the present embodiment, the inner chamber 200 is connected in a detachable manner, so that the inner chamber 200 can be installed and detached as needed, and the positioning and maintenance of the inner chamber 200 are facilitated.

[0033] Of course, in other embodiments, the inner chamber 200 can be mounted to the mounting area with the protruding portion 120 in a non-detachable manner such as welding, bonding, etc.

[0034] In some embodiments, as shown in FIG. 2, the top of the inner chamber 200 is provided with a limiting protrusion 210 protruding from the top wall of the inner chamber 200, and the bottom of the inner chamber 200 is provided with a first positioning protrusion 220 protruding from the bottom wall of the inner chamber 200. The limiting protrusion 210 is arranged opposite to the first positioning protrusion 220. The top of the protruding portion 120 is provided with a first limiting slot 120a for the limiting protrusion 210 to extend into, and the bottom of the protruding portion 120 is provided with a positioning slot 120b for the first positioning protrusion 220 to extend into. The first limiting slot 120a and the positioning slot 120b are arranged opposite to each other.

[0035] In the case that the limiting protrusion 210 extends into the first limiting slot 120a, the limiting protrusion 210 and the first limiting slot 120a are limited in the direction parallel to the axis of the chamber body 100, and the first positioning protrusion 220 can extend into the positioning slot 120b to be positioned with the positioning slot 120b. In some embodiments, the axis of the chamber body 100 can extend in the vertical direction, and the limiting protrusion 210 and the first limiting slot 120a are limited in the vertical direction.

[0036] That is, the limiting protrusion 210 is preliminarily limited by the first limiting slot 120a to limit the movement range of the inner chamber 200, and the first positioning protrusion 220 is accurately positioned by the first positioning slot 120b to further accurately position the inner chamber 200.

[0037] In some embodiments, the structure and size of the positioning slot 120b are the same as those of the first positioning protrusion 220, and the first positioning protrusion 220 can be a cylindrical structure, a square structure, etc. The structure of the positioning slot 120b and the first positioning protrusion 220 is not limited in the embodiments of the present application. The side cavity wall 110 is provided with a partition plate 111 cooperating with the protruding portion 120 to form the first limiting slot 120a. The limiting protrusion 210 can also be a cylindrical structure, a square structure, etc. The structure of the limiting protrusion 210 is not limited in the embodiments of the present application.

[0038] By using the first limiting slot 120a and the limiting protrusion 210 cooperating with each other, the top of the inner chamber 200 is supported, and by using the positioning slot 120b and the first positioning protrusion 220 cooperating with each other, the bottom of the inner chamber 200 is supported. Moreover, the inner chamber 200 can be mounted by extending the protrusions into the corresponding slots, and the inner chamber 200 can be dismounted by separating the protrusions from the corresponding slots, so that the mounting and dismounting processes are more convenient.

[0039] In one embodiment, the number of inner chambers 200 is one.

[0040] In another embodiment, a plurality of inner chambers 200 are arranged along the circumference of the chamber body 100. In some embodiments, the inner chambers 200 are evenly distributed along the circumference of the chamber body 100, and the side cavity wall 110 of the chamber body 100 is also provided with a plurality of protrusions 120, which correspond to the inner chambers 200 one by one, and each inner chamber 200 is fixed and installed by the positioning protrusion and the limiting protrusion 210 described above.

[0041] With this embodiment, the number of inner chambers 200 increases, and the total area of the plasma generation area a increases, which can generate more plasma into the wafer reaction area b at the same time, which is beneficial to improve the process efficiency.

[0042] In the scheme of the present application, as shown in FIGS. 1-3 and FIGS. 7-8, the semiconductor process chamber further comprises a gas inlet pipe 300 for introducing process gas and a gas guide pipe 400, the gas inlet pipe 300 is used to introduce process gas into the chamber body 100, and the gas guide pipe 400 is used to guide the process gas into the inner chamber 200, so that the process gas is ionized in the inner chamber 200. The gas inlet pipe 300 and the gas guide pipe 400 can be quartz pipes. Specifically, one end of the gas inlet pipe 300 extends into the interior of the chamber body 100, the gas guide pipe 400 is arranged in the chamber body 100, and the gas inlet pipe 300 and the gas guide pipe 400 are in communication, that is, the gas outlet end of the gas inlet pipe 300 and the gas inlet end of the gas guide pipe 400 are in communication. In some embodiments, the gas inlet pipe 300 penetrates the cavity wall of the manifold chamber 102, thereby extending into the interior of the chamber body 100; the gas outlet end of the gas inlet pipe 300 and the gas inlet end of the gas guide pipe 400 can be in communication by sleeving.

[0043] Referring to FIG. 7, the cavity wall of the inner chamber 200 is provided with an opening 200b, and in some embodiments, the opening 200b is arranged on the cavity bottom wall of the inner chamber 200; the gas guide pipe 400 penetrates the opening 200b, so that a part of the gas guide pipe 400 extends into the interior of the inner chamber 200, and the part of the gas guide pipe 400 extending into the inner chamber 200 is provided with a plurality of gas outlet holes 411, as shown in FIG. 3. In some embodiments, the gas guide pipe 400 comprises a first pipe portion 410 and a second pipe portion 420 in communication, the first pipe portion 410 penetrates the opening 200b and extends into the interior of the inner chamber 200, the first pipe portion 410 is provided with a plurality of gas outlet holes 411 along a direction parallel to the axis of the chamber body 100 (i.e. vertical direction), and the second pipe portion 420 is located outside the inner chamber 200, the pipe diameter of the first pipe portion 410 is smaller than that of the second pipe portion 420.

[0044] By using the embodiment, the gas guide pipe 400 and the inner chamber 200 are in a split structure, the gas guide pipe 400 can extend into the inner chamber 200 through the opening 200b and be separated from the inner chamber 200, so as to facilitate the installation and maintenance of the gas guide pipe 400.

[0045] Of course, in other embodiments, the cavity bottom wall of the inner chamber 200 can form the gas guide pipe 400 by integral molding, that is, the inner chamber 200 and the gas guide pipe 400 are in an integral molding structure.

[0046] In an embodiment, the gas guide pipe 400 and the cavity bottom wall of the inner chamber 200 are connected by clamping or the like.

[0047] In another embodiment, referring to FIG. 7, the gas guide pipe 400 extends in a direction parallel to the axis of the chamber body 100, and further, in some embodiments, the direction in which the axis of the chamber body 100 is located is a vertical direction, and the gas guide pipe 400 extends in the vertical direction; the gas guide pipe 400 is provided with a second positioning protrusion 430 protruding from the outer wall surface of the gas guide pipe 400. In some embodiments, the second positioning protrusion 430 can be a block-shaped protrusion or a ring-shaped protrusion, and the specific structure of the second positioning protrusion 430 is not limited in the embodiment of the application; the second positioning protrusion 430 is located between the first pipe portion 410 and the second pipe portion 420, and the second positioning protrusion 430 protrudes from the outer wall surface of the second pipe portion 420. Referring to FIG. 8, the semiconductor process chamber further includes an elastic member 500, which can be but is not limited to a spring; the elastic member 500 is connected with the gas guide pipe 400, and in some embodiments, the elastic member 500 is connected with the second pipe portion 420; under the elastic action of the elastic member 500, the second positioning protrusion 430 abuts against the cavity bottom wall of the inner chamber 200. Specifically, one end of the elastic member 500 is a fixed end, and the other end of the elastic member 500 is connected with the gas guide pipe 400; the elastic member 500 generates elastic deformation and exerts an elastic force on the gas guide pipe 400.

[0048] In some embodiments, the elastic member 500 is located below the gas guide pipe 400, and the elastic member 500 is in a compressed state.

[0049] By using the embodiment, the second positioning protrusion 430 and the cavity bottom wall of the inner chamber 200 are abutted tightly by the elastic force of the elastic member 500, so as to avoid the diffusion of the plasma in the inner chamber 200 through the gap between the second positioning protrusion 430 and the cavity bottom wall of the inner chamber 200 to other areas, avoid the plasma from bombarding the cavity bottom wall or the gas guide pipe 400 to generate particles, and facilitate the improvement of the process effect.

[0050] In a further embodiment, referring to FIG. 7, the cavity bottom wall of the inner chamber 200 is further provided with a second limiting groove 200c, the second limiting groove 200c is in communication with the opening 200b, the second positioning protrusion 430 extends into the second limiting groove 200c, and the second positioning protrusion 430 is in limiting cooperation with the second limiting groove 200c. Under the elastic action of the elastic member 500, the second positioning protrusion 430 directly abuts against the groove wall surface of the second limiting groove 200c. In some embodiments, the second limiting groove 200c can be a square groove, a circular groove, etc., and the present embodiment does not limit the structure of the second limiting groove 200c. The surface of the second positioning protrusion 430 can be in abutting contact with the groove wall surface of the second limiting groove 200c.

[0051] By adopting the present embodiment, the installation position of the air guide pipe 400 is limited by the second limiting groove 200c, which is conducive to the accurate extension of the air guide pipe 400 into the opening 200b and also conducive to the accurate mutual abutment of the air guide pipe 400 and the elastic member 500, thereby facilitating the accurate installation of the air guide pipe 400.

[0052] Of course, in other embodiments, the cavity bottom wall of the inner chamber 200 can not be provided with the second limiting groove 200c, and the second positioning protrusion 430 directly abuts against the bottom cavity wall of the inner chamber 200 under the elastic action of the elastic member 500.

[0053] In some embodiments, referring to FIG. 8, the outlet end of the air inlet pipe 300 is provided with an annular groove 300a, the elastic member 500 is arranged in the annular groove 300a, and the air inlet end of the air guide pipe 400 extends into the annular groove 300a, and the elastic member 500 abuts against the air inlet end of the air guide pipe 400. In this way, one end of the elastic member 500 directly abuts against the groove bottom wall of the annular groove 300a, and the other end of the elastic member 500 directly abuts against the air inlet end of the air guide pipe 400. In some embodiments, the air inlet pipe 300 includes a first air inlet pipe 310 and a second air inlet pipe 320 connected in series, the first air inlet pipe 310 is horizontally arranged, the second air inlet pipe 320 extends in a direction parallel to the axis of the chamber body 100, the first air inlet pipe 310 penetrates the cavity wall of the manifold chamber 102, and the first air inlet pipe 310 is fixed to the manifold chamber 102 by bolts 102a, the second air inlet pipe 320 is in communication with the air guide pipe 400, and the annular groove 300a can be formed in the second air inlet pipe 320, and the axis of the annular groove 300a is collinear with the axis of the second air inlet pipe 320.

[0054] By adopting the present embodiment, the elastic member 500 and the air inlet end of the air guide pipe 400 are accommodated in the annular groove 300a, so that the elastic member 500 and the air guide pipe 400 are accurately opposite to each other and directly abut against each other, without the need for separate connection operation of the elastic member 500 and the air guide pipe 400, and at the same time, the installation and dismounting of the elastic member 500 are facilitated.

[0055] Of course, in other embodiments, the outlet end of the gas inlet pipe 300 can not be provided with the annular groove 300a, and the elastic member 500 can be installed at other positions.

[0056] In one embodiment, the cavity wall of the inner cavity 200 is provided with only one opening 200b, and the number of the gas inlet pipe 300 and the gas guide pipe 400 is one, the gas inlet pipe 300 is in communication with the gas guide pipe 400, and the gas guide pipe 400 penetrates the opening 200b.

[0057] In another embodiment, the cavity wall of the inner cavity 200 is provided with a plurality of openings 200b, as shown in FIG. 11, the number of the gas inlet pipe 300 and the gas guide pipe 400 is also a plurality, each gas inlet pipe 300 is arranged at intervals, and each gas guide pipe 400 is also arranged at intervals. The gas inlet pipe 300, the gas guide pipe 400 and the opening 200b are one-to-one corresponding, the gas inlet pipe 300 and the gas guide pipe 400 are one-to-one corresponding, and each gas guide pipe 400 penetrates the corresponding opening 200b. Further, in some embodiments, each gas inlet pipe 300 can introduce the same kind of process gas into the same inner cavity 200, or can introduce different kinds of process gas respectively.

[0058] By using the embodiment, the number of the gas inlet pipe 300 and the gas guide pipe 400 is increased, and a plurality of gas inlet pipes 300 simultaneously introduce process gas into the same inner cavity 200, which is beneficial to improve the efficiency of introducing process gas and to quickly generate plasma.

[0059] In the scheme of the present application, as shown in FIGS. 4-6, the semiconductor process chamber further comprises an electrode 600 and an electrode fixing member 700, at least part of the electrode 600 is opposite to the inner cavity 200 to ionize the process gas in the inner cavity 200. In some embodiments, the electrode 600 is opposite to the inner cavity 200 in the horizontal direction, which can be that part of the electrode 600 is opposite to the inner cavity 200 in the horizontal direction, or the whole electrode 600 is opposite to the inner cavity 200 in the horizontal direction; the electrode 600 and the electrode fixing member 700 are both located outside the chamber body 100, the electrode fixing member 700 is connected with the chamber body 100, and the electrode fixing member 700 is used to fix the electrode 600, and the embodiment of the present application does not limit the structure of the electrode fixing member 700, which can fix the electrode 600. In some embodiments, the electrode fixing member 700 is connected with the chamber body 100 through a compression ring 820, and further in some embodiments, the electrode fixing member 700 can be connected with the compression ring 820 through welding, bonding or the like; the electrode 600 can be fixedly connected with the electrode fixing member 700 through welding, bonding or the like, or can be fixedly connected through clamping or the like.

[0060] In some embodiments, the number of electrodes 600 is two, and the two electrodes 600 are symmetrically arranged on two sides of the inner chamber 200 respectively, and the two electrodes 600 are connected to the positive and negative poles of the power supply respectively, and the electrode fixing member 700 corresponds to the electrode 600 one by one.

[0061] In this embodiment, the electrode 600 and the electrode fixing member 700 are arranged outside, so that the process environment in the chamber body 100 is not affected by the electrode 600, and the electrode 600 does not need to be provided with isolation protection and other structures, which is beneficial to simplify the structure of the semiconductor process chamber.

[0062] Of course, in other embodiments, the electrode 600 can also penetrate the cavity wall of the inner chamber 200 and extend into the inner chamber 200.

[0063] In some embodiments, as shown in FIG. 4, the electrode fixing member 700 is provided with a slot 710, the lower end of the electrode 600 extends into the slot 710, and the electrode 600 is provided with a third positioning protrusion 631 protruding from the peripheral surface of the electrode 600, and the slot 710 is provided with a supporting groove at the slot opening, and the third positioning protrusion 631 extends into the supporting groove, so that the electrode fixing member 700 supports the third positioning protrusion 631 and the electrode 600. Further, in some embodiments, the electrode 600 extends in a direction parallel to the axis of the chamber body 100, the slot 710 is a strip-shaped slot extending in a direction parallel to the axis of the chamber body 100; the third positioning protrusion 631 can be a block-shaped protrusion or a ring-shaped protrusion, and the supporting groove can be a square groove, a circular groove or the like, and the specific structure of the third positioning protrusion 631 and the supporting groove is not limited in the embodiments of the present application, and the third positioning protrusion 631 can cooperate with the groove wall surface of the supporting groove.

[0064] In this embodiment, the electrode 600 directly extends into the slot 710, and the third positioning protrusion 631 and the supporting groove directly support the electrode 600 by the electrode fixing member 700, so as to fix the position of the electrode 600, and the fixing structure and method are simpler, and the electrode fixing member 700 does not need to adopt a complex fixing structure.

[0065] In some embodiments, the chamber body 100 includes a side cavity wall 110, and the side cavity wall 110 is provided with a protruding portion 120 protruding from the outer wall surface of the side cavity wall 110, and the inner chamber 200 is arranged on the protruding portion 120, and the protruding portion 120 is provided with a limiting structure, and the limiting structure is limited in cooperation with the electrode 600, so that the axis of the electrode 600 is parallel to the axis of the chamber body 100. In some embodiments, the axis of the chamber body 100 extends in a vertical direction, and the electrode 600 also extends in a vertical direction; the protruding portion 120 is provided with a limiting structure on the opposite sides, and the limiting structure can be a limiting groove, a limiting hole or other structures capable of limiting.

[0066] By adopting the embodiment, the position of the electrode 600 is increased by adding the limiting structure, and the position state of the electrode 600 is further accurately limited, which is beneficial to the accurate position of the electrode 600 relative to the inner chamber 200, so as to accurately ionize the process gas in the inner chamber 200.

[0067] In further embodiments, the bottom and top of the protruding part 120 are respectively provided with a first positioning block 121 and a second positioning block 122, the first positioning block 121, the second positioning block 122 and the protruding part 120 can be an integral molding structure or a split structure; the first positioning block 121 and the second positioning block 122 are both provided with a limiting structure. The limiting structure provided by the first positioning block 121 is a third limiting groove 121a, and the third limiting groove 121a is opened on the side of the first positioning block 121 away from the protruding part 120. The limiting structure provided by the second positioning block 122 is a limiting hole 122a, and the end of the electrode 600 penetrates through the third limiting groove 121a and extends into the limiting hole 122a. That is, the same electrode 600 is limited by the third limiting groove 121a and the limiting hole 122a respectively.

[0068] In some embodiments, the third limiting groove 121a can be an arc-shaped groove, and the arc-shaped groove is in contact with the surface of the electrode 600. The third limiting groove 121a can also be a square groove, and the opposite two groove walls of the square groove are respectively in contact with the surface of the electrode 600. Of course, the third limiting groove 121a can also be a groove of other structures. The limiting hole 122a can be a circular hole, and the hole wall surface of the circular hole is in contact with the surface of the electrode 600. The limiting hole 122a can also be a square hole or other holes capable of limiting the electrode 600.

[0069] By adopting the embodiment, at least two limiting structures are used to limit different positions of the same electrode 600 respectively, which is beneficial to the electrode 600 being more accurately parallel to the axis of the chamber body 100, i.e. beneficial to the electrode 600 being more accurately in a vertical state, and improves the installation stability of the electrode 600.

[0070] Of course, in other embodiments, the protruding part 120 can be provided with only the first positioning block 121 or the second positioning block 122, i.e. the same electrode 600 is limited by only the third limiting groove 121a or the limiting hole 122a.

[0071] In some embodiments, referring to FIGS. 9 and 10, the electrode 600 includes an electrode body 610 and a height maintaining tube 620, the electrode body 610 is used to electrically connect a radio frequency terminal, the top and bottom of the electrode body 610 are respectively provided with a first protruding structure 611 and a second protruding structure 612, both of which protrude from the peripheral surface of the electrode body 610. Further, in some embodiments, the first protruding structure 611 and the second protruding structure 612 are integrated with the electrode body 610; the height maintaining tube 620 is sleeved outside the electrode body 610, the second protruding structure 612 provides support for the height maintaining tube 620, the first protruding structure 611 is used to limit the height of the height maintaining tube 620, and the first protruding structure 611, the height maintaining tube 620 and the second protruding structure 612 are sequentially limited and matched in the vertical direction.

[0072] In some embodiments, the axis of the chamber body 100 extends in the vertical direction, and the first protruding structure 611, the height maintaining tube 620 and the second protruding structure 612 sequentially limit and contact in the vertical direction.

[0073] In the case of process environment temperature rise or the electrode 600 in the working state, the electrode body 610 will expand, and the first protruding structure 611 moves away from the height maintaining tube 620; in the case of process environment temperature drop or the electrode 600 being powered off, the electrode body 610 contracts, and in this process, the first protruding structure 611 abuts against the height maintaining tube 620, and the height maintaining tube 620 hinders the contraction of the electrode body 610, so that the height of the electrode body 610 is maintained substantially unchanged, thereby avoiding the problem of abnormal process film thickness caused by the height reduction of the electrode body 610.

[0074] In some embodiments, the first protruding structure 611 can be a hemispherical protrusion or a protrusion of other shapes, and the embodiments of the present application do not limit the specific shape and structure of the first protruding structure 611, which only needs to protrude relative to the outer wall surface of the height maintaining tube 620.

[0075] In further embodiments, referring to FIGS. 9-10, the electrode 600 further comprises a protection tube 630 for protecting the electrode body 610 and the height-keeping tube 620, and a ring-shaped fixing block 640 for connecting the protection tube 630 and the electrode body 610 so that the protection tube 630 and the electrode body 610 are relatively fixed. The protection tube 630 is sleeved outside the height-keeping tube 620, and a gap can be formed between the inner wall surface of the protection tube 630 and the outer wall surface of the height-keeping tube 620. The ring-shaped fixing block 640 can be made of polytetrafluoroethylene or other insulating materials. A part of the ring-shaped fixing block 640 is sleeved outside the protection tube 630, and another part of the ring-shaped fixing block 640 is sleeved outside the second protruding structure 612, so that the ring-shaped fixing block 640 is connected with the protection tube 630 and the electrode body 610, respectively. In some embodiments, a third positioning protrusion 631 is arranged on the protection tube 630 and protrudes relative to the outer wall surface of the protection tube 630.

[0076] In this embodiment, the protection tube 630 serves as an outer layer of the electrode 600 to protect the electrode body 610. Meanwhile, the ring-shaped fixing block 640 is used to connect the components to fix the relative positions of the components of the electrode 600.

[0077] In some embodiments, the height-keeping tube 620 and the protection tube 630 can be made of quartz tubes or tubes made of other materials.

[0078] Of course, in other embodiments, the electrode 600 can only comprise the electrode body 610, i.e., the electrode 600 does not comprise the height-keeping tube 620, the protection tube 630, and the ring-shaped fixing block 640.

[0079] In one embodiment, the protection tube 630 and the ring-shaped fixing block 640 can be fixedly connected by welding, bonding, or the like.

[0080] In another embodiment, the outer wall surface of the protection tube 630 and the inner wall surface of the ring-shaped fixing block 640 are snap-fitted. In some embodiments, referring to FIG. 10, the outer wall surface of the protection tube 630 is provided with a clamping groove 632, and the ring-shaped fixing block 640 is provided with a clamping block that can extend into the clamping groove 632 and be snap-fitted with the clamping groove 632. Further, in some embodiments, the clamping block and the clamping groove 632 can both be ring-shaped structures. Of course, the clamping block can be arranged on the outer wall surface of the protection tube 630, and the clamping groove 632 can be arranged on the ring-shaped fixing block 640.

[0081] In this embodiment, the ring-shaped fixing block 640 and the protection tube 630 are snap-fitted, which facilitates the installation and removal of the protection tube 630 and the replacement of the protection tube 630 for the maintenance of the electrode 600.

[0082] In an embodiment, the annular fixing block 640 and the electrode body 610 can be fixedly connected by welding, bonding or the like.

[0083] In another embodiment, as shown in FIG. 10, the annular fixing block 640 is provided with a stepped portion 641, the second protruding structure 612 is overlapped on the stepped portion 641, the stepped portion 641 directly supports the second protruding structure 612, and the stepped portion 641 and the second protruding structure 612 are limitedly matched in the vertical direction. Further, in some embodiments, the axis of the chamber body 100 extends in the vertical direction, and the stepped portion 641 and the second protruding structure 612 are limitedly contacted in the vertical direction; the second protruding structure 612 and the stepped portion 641 can be block-shaped structures or annular structures, which are not limited in the embodiments of the present application.

[0084] By using the embodiment, on the basis of the second protruding structure 612 provided on the electrode body 610, the annular fixing block 640 directly limits the electrode body 610 in the direction parallel to the axis of the chamber body 100 through the stepped portion 641, prevents the electrode body 610 from sliding relative to the annular fixing block 640 under the action of gravity, and realizes the relative fixation of the electrode body 610 and the annular fixing block 640, avoiding the complex connection operation and connection mode of the two.

[0085] In further embodiments, the annular fixing block 640 includes an annular pressing portion 642, the annular pressing portion 642 is provided with a tapered surface 642a, the annular pressing portion 642 extends into the protection tube 630, and the protection tube 630 acts on the tapered surface 642a to make the annular pressing portion 642 abut against the height maintaining tube 620 and the electrode body 610. In the direction from the annular fixing block 640 to the protection tube 630, the radial dimension of the tapered surface 642a decreases, and the outer wall surface of the annular pressing portion 642 includes the tapered surface 642a. In some embodiments, the inner wall surface of the annular pressing portion 642 is in contact with the outer wall surface of the height maintaining tube 620, and when the tapered surface 642a is stressed, the annular pressing portion 642 directly abuts against the height maintaining tube 620, so that the height maintaining tube 620 and the electrode body 610 are pressed against each other.

[0086] By using the embodiment, the height maintaining tube 620 and the electrode body 610 are pressed by the annular pressing portion 642, the height maintaining tube 620 and the electrode body 610 are pressed against each other, which is conducive to keeping the annular pressing portion 642, the height maintaining tube 620 and the electrode body 610 relatively fixed, and improves the overall stability of the electrode 600.

[0087] Of course, in other embodiments, the annular fixing block 640 can not be provided with the annular pressing portion 642, i.e., the annular fixing block 640 is connected with the protection tube 630 and the electrode body 610 respectively to realize the relative fixation of the components.

[0088] In some embodiments, referring to FIGS. 9-10, the electrode 600 further comprises a heat shrink tube 650, the heat shrink tube 650 is sleeved outside the annular fixing block 640, a first end of the heat shrink tube 650 is connected with the protective tube 630, and a second end of the heat shrink tube 650 is connected with the electrode body 610. Further, in some embodiments, the first end of the heat shrink tube 650 and the protective tube 630, and the second end of the heat shrink tube 650 and the electrode body 610 can be connected by bonding. Specifically, the heat shrink tube 650 is a shrink sleeve made of polyolefin material, the outer layer is made of soft cross-linked polyolefin material, and the inner layer is made by hot melt adhesive composite processing. The outer layer material has the characteristics of insulation, corrosion resistance and wear resistance, and the inner layer has the advantages of low melting point, waterproof sealing and high adhesion.

[0089] By using the heat shrink tube 650, the connection between each component is insulated and protected and sealed, and at the same time, the heat shrink tube 650 covers the annular fixing block 640 as a whole inside, avoiding the annular fixing block 640 from being exposed, which is beneficial to improve the appearance performance, sealing performance and insulation performance.

[0090] Of course, in other embodiments, the electrode 600 can only be provided with the electrode body 610, the height retaining tube 620, the protective tube 630 and the annular fixing block 640, that is, the electrode 600 can not be provided with the heat shrink tube 650.

[0091] Based on the semiconductor process chamber disclosed in the present application, the semiconductor heat treatment equipment disclosed in the embodiments of the present application comprises the above-mentioned semiconductor process chamber and a gas supply pipeline (not shown in the figure), which is used to provide process gas for the inner chamber 200 to generate plasma. Specifically, the gas supply pipeline can provide process gas for the inner chamber 200 through the gas inlet pipe 300 and the gas guide pipe 400. In some embodiments, referring to FIG. 1, the semiconductor heat treatment equipment can further comprise a heater 810, which is located outside the chamber body 100, and the heater 810 heats the chamber body 100 to provide temperature protection for the chamber body 100. Further, in some embodiments, the heater 810 can be an annular heater.

[0092] By using the semiconductor process chamber of the semiconductor heat treatment equipment, the inner chamber 200 for forming the plasma generation area a is separately provided, and the cavity wall of the inner chamber 200 blocks the metal ions from bombarding the cavity wall of the chamber body 100. The metal ions cannot bombard the cavity wall of the chamber body 100, avoiding the diffusion of the metal ions to the wafer reaction area b outside the inner chamber 200, thereby avoiding the pollution of the wafer 850 in the wafer reaction area b, which is beneficial to improve the process effect.

[0093] The embodiments of the present application are described above with reference to the accompanying drawings, but the present application is not limited to the specific embodiments described above, and the specific embodiments described above are merely illustrative, but not restrictive, and a person of ordinary skill in the art can make many forms under the inspiration of the present application without departing from the purpose of the present application and the scope protected by the claims.

Claims

1. A semiconductor process chamber, characterized by, The chamber body and the inner chamber, the inner space of the inner chamber is used as a plasma generating area, the inner chamber is a metal barrier structure, The chamber body is provided with a wafer reaction area, the plasma generating area is opposite to the wafer reaction area, and the inner chamber is provided with a through hole, the plasma generating area is communicated with the wafer reaction area through the through hole.

2. The semiconductor process chamber of claim 1, wherein, The chamber body includes a side cavity wall, the side cavity wall is provided with a protruding part, the protruding part protrudes from the outer wall surface of the side cavity wall, and the protruding part forms a mounting area, the mounting area is communicated with the inner space of the chamber body, and the inner chamber is detachably arranged in the mounting area.

3. The semiconductor process chamber of claim 2, wherein, The top of the inner chamber is provided with a limiting protrusion, the bottom of the inner chamber is provided with a first positioning protrusion, the top of the protruding part in the mounting area is provided with a first limiting groove, the bottom of the protruding part in the mounting area is provided with a positioning groove, When the limiting protrusion extends into the first limiting groove, the first positioning protrusion can extend into the positioning groove, so that the first positioning protrusion is positioned and matched with the positioning groove.

4. The semiconductor process chamber of claim 1, wherein, The semiconductor process chamber further includes a gas inlet pipe for introducing process gas and a gas guide pipe, one end of the gas inlet pipe extends into the inner part of the chamber body, the gas guide pipe is arranged in the chamber body, and the gas inlet pipe is communicated with the gas guide pipe, The cavity wall of the inner chamber is provided with an opening, the gas guide pipe penetrates through the opening, so that a part of the gas guide pipe extends into the inner part of the inner chamber, and the part of the gas guide pipe extending into the inner chamber is provided with a plurality of gas outlet holes.

5. The semiconductor process chamber of claim 4, wherein, The gas guide pipe extends in a direction parallel to the axial direction of the chamber body, the gas guide pipe is provided with a second positioning protrusion, the second positioning protrusion protrudes from the outer wall surface of the gas guide pipe, The semiconductor process chamber further includes an elastic member, the elastic member is connected with the gas guide pipe, and under the elastic action of the elastic member, the second positioning protrusion abuts against the cavity bottom wall of the inner chamber.

6. The semiconductor process chamber of claim 5, wherein, The cavity bottom wall of the inner chamber is further provided with a second limiting groove, the second limiting groove is communicated with the opening, the second positioning protrusion extends into the second limiting groove, and the second positioning protrusion is limitedly matched with the second limiting groove.

7. The semiconductor process chamber of claim 5, wherein, The outlet end of the gas inlet pipe is provided with an annular groove, the elastic member is arranged in the annular groove, and the gas inlet end of the gas guide pipe extends into the annular groove, and the elastic member abuts against the gas inlet end of the gas guide pipe.

8. The semiconductor process chamber of claim 4, wherein, The cavity wall of the inner chamber is spaced apart and provided with a plurality of openings, the number of the gas inlet pipes and the gas guide pipes is plural, and the gas inlet pipes, the gas guide pipes and the openings are one-to-one corresponding respectively.

9. The semiconductor process chamber of claim 1, wherein, The semiconductor process chamber further includes an electrode and an electrode fixing member, at least part of the electrode is opposite to the inner chamber to ionize the process gas in the inner chamber, the electrode and the electrode fixing member are located outside the chamber body, the electrode fixing member is connected with the chamber body, and the electrode fixing member is used for fixing the electrode.

10. The semiconductor process chamber of claim 9, wherein, The electrode fixing member is provided with a slot, the lower end of the electrode extends into the slot, and the electrode is provided with a third positioning protrusion which protrudes from the peripheral surface of the electrode, the slot is provided with a supporting groove at the slot opening, the third positioning protrusion extends into the supporting groove, so that the electrode fixing member supports the third positioning protrusion and the electrode.

11. The semiconductor process chamber of claim 10, wherein, The chamber body includes a side cavity wall, the side cavity wall is provided with a protruding part which protrudes from the outer wall surface of the side cavity wall, the inner cavity is arranged in the protruding part, The protruding part is provided with a limiting structure which is limited in cooperation with the electrode, so that the axis of the electrode is parallel to the axis of the chamber body.

12. The semiconductor process chamber of claim 11, wherein, The bottom and top of the protruding part are respectively provided with a first positioning block and a second positioning block, the first positioning block and the second positioning block are both provided with the limiting structure, The limiting structure provided by the first positioning block is a third limiting groove, the limiting structure provided by the second positioning block is a limiting hole, the electrode penetrates through the third limiting groove and extends into the limiting hole.

13. The semiconductor process chamber of claim 9, wherein, The electrode includes an electrode body and a height maintaining tube, the top and bottom of the electrode body are respectively provided with a first protruding structure and a second protruding structure, the first protruding structure and the second protruding structure both protrude from the peripheral surface of the electrode body, the height maintaining tube is sleeved outside the electrode body, the first protruding structure, the height maintaining tube and the second protruding structure are sequentially limited in cooperation in the direction parallel to the axis of the chamber body.

14. The semiconductor process chamber of claim 13, wherein, The electrode further includes a protection tube and a ring-shaped fixing block, the protection tube is sleeved outside the height maintaining tube, a part of the ring-shaped fixing block is sleeved outside the protection tube, another part of the ring-shaped fixing block is sleeved outside the second protruding structure, The outer wall surface of the protection tube and the inner wall surface of the ring-shaped fixing block are connected in cooperation; and / or, the ring-shaped fixing block is provided with a stepped part, the second protruding structure is overlapped on the stepped part.

15. The semiconductor process chamber of claim 14, wherein, The ring-shaped fixing block includes a ring-shaped pressing part which is provided with a tapered surface, the ring-shaped pressing part extends into the protection tube, and the protection tube acts on the tapered surface, so that the ring-shaped pressing part abuts against the height maintaining tube and the electrode body.

16. The semiconductor process chamber of claim 14, wherein, The electrode further includes a heat shrink tube, the heat shrink tube is sleeved outside the ring-shaped fixing block, and a first end of the heat shrink tube is connected with the protection tube, and a second end of the heat shrink tube is connected with the electrode body.

17. The semiconductor process chamber of claim 1, wherein, Along the circumference of the chamber body, a plurality of inner cavities are arranged at intervals.

18. A semiconductor heat treatment apparatus, characterized by comprising: The semiconductor process chamber and the gas supply pipeline of any one of claims 1-17 are provided, the gas supply pipeline is used to provide process gas for the inner cavity to generate a plasma body.

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