Light-emitting diode device and display panel

Abstract

Disclosed in embodiments of the present application are a light-emitting diode device and a display panel. The light-emitting diode device comprises: a first current spreading layer; an active layer comprising at least one multi-quantum well portion; and a second current spreading layer comprising at least one conductive portion. In an orthographic projection on a plane where the first current spreading layer is located, an orthographic projection of the at least one multi-quantum well portion at least partially overlaps an orthographic projection of the at least one conductive portion, and the area of the orthographic projection of the at least one multi-quantum well portion is different from the area of the orthographic projection of the at least one conductive portion.

Description

Light emitting diode device and display panel TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a light emitting diode device and a display panel. BACKGROUND

[0002] Micro-LED has the technical advantages of high brightness, high transmittance and high contrast, and has been paid more and more attention in recent years. However, due to the characteristics of LED chips (hereinafter referred to as chips), the best current efficiency of the chips is different under different working currents. Generally, the higher the current density, the higher the wall-plug efficiency (WPE) of the chip. Generally speaking, the smaller the chip size, the higher the current density under the same current.

[0003] However, due to the current transfer bonding process capability, there are certain requirements for the size of the chip. For example, the commonly used chip sizes of 15*30 μm and 15*25 μm, generally, the chip size is less than 20 μm, and the pad size and the gap between the pads of the chip may not match the transfer bonding process. The process precision of the transfer bonding process cannot meet the requirements, so the chip size cannot be continuously miniaturized. On the other hand, the resolution specification of the panel increases or the display brightness requirement decreases, and the chip size does not decrease, so the working current of the chip cannot reach the best current density, resulting in a substantial increase in product power consumption.

[0004] For example, under the same brightness requirement, the resolution of the panel increases, the distance between the chips decreases, and the current demand of the chip decreases significantly, thereby causing the current density to decrease and the WPE of the chip to decrease, resulting in an increase in product power consumption. SUMMARY

[0005] The embodiments of the present application provide a light emitting diode device and a display panel, which can improve the light emitting efficiency of the light emitting diode device.

[0006] In one aspect, the embodiments of the present application provide a light emitting diode device, which comprises:

[0007] a first current spreading layer;

[0008] an active layer disposed on the first current spreading layer, the active layer comprising at least one multi-quantum well portion;

[0009] a first conductive pad disposed on the first current spreading layer and located at one side of the active layer;

[0010] a second current spreading layer disposed on a side of the active layer away from the first current spreading layer, the second current spreading layer comprising at least one conductive portion; and

[0011] a second conductive pad disposed on a side of the second current spreading layer away from the first current spreading layer;

[0012] wherein in a projection on a plane on which the first current spreading layer is located, a projection of the at least one multi-quantum well portion and a projection of the at least one conductive portion at least partially overlap, and an area of the projection of the at least one multi-quantum well portion and an area of the projection of the at least one conductive portion are different.

[0013] In another aspect, the embodiments of the present application also provide a light emitting diode device, which comprises:

[0014] a first current spreading layer;

[0015] an active layer disposed on the first current spreading layer;

[0016] a first conductive pad disposed on the first current spreading layer and located on a side of the active layer;

[0017] a second current spreading layer disposed on a side of the active layer away from the first current spreading layer; and

[0018] at least two second conductive pads disposed on a side of the second current spreading layer away from the first current spreading layer.

[0019] In yet another aspect, the embodiments of the present application also provide a display panel, which comprises a driving substrate and a light emitting diode device as described in any one of the above embodiments, and the light emitting diode device is disposed on the driving substrate;

[0020] The display panel further comprises a plurality of lenses, and one lens is disposed on a light emitting side of one light emitting diode device. BRIEF DESCRIPTION OF DRAWINGS

[0021] FIG. 1 is a first cross-sectional structure schematic diagram of a light emitting diode device provided by one or more embodiments of the present application;

[0022] FIG. 2 is a first top plan view of a light emitting diode device provided by one or more embodiments of the present application;

[0023] FIG. 3 is a second cross-sectional structure schematic diagram of a light emitting diode device provided by one or more embodiments of the present application;

[0024] FIG. 4 is a second top plan view of a light emitting diode device provided by one or more embodiments of the present application;

[0025] FIG. 5 is a third cross-sectional structure schematic diagram of a light emitting diode device provided by one or more embodiments of the present application;

[0026] FIG. 6 is a schematic diagram of a fourth cross-sectional structure of a light emitting diode device according to one or more embodiments of the present application;

[0027] FIG. 7 is a third plan view of a light emitting diode device according to one or more embodiments of the present application;

[0028] FIG. 8 is a schematic diagram of a fifth cross-sectional structure of a light emitting diode device according to one or more embodiments of the present application;

[0029] FIG. 9 is a schematic diagram of a sixth cross-sectional structure of a light emitting diode device according to one or more embodiments of the present application;

[0030] FIG. 10 is a schematic diagram of a first cross-sectional structure of a display panel according to one or more embodiments of the present application;

[0031] FIG. 11 is a schematic diagram of a second cross-sectional structure of a display panel according to one or more embodiments of the present application. Embodiments of the present application

[0032] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, any other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, the embodiments can be combined with each other but are not described one by one, and the positional words such as "upper" and "lower" are generally used to refer to the upper and lower of the device in the actual use or working state, and the specific is the direction of the drawing in the drawings; and "inner" and "outer" are used in relation to the outline of the device; the words "first", "second", "third" and the like are only used as labels, and do not impose a numerical requirement or establish an order.

[0033] In one aspect, the embodiments of the present application provide a light emitting diode device, which comprises:

[0034] a first current spreading layer;

[0035] an active layer disposed on the first current spreading layer, the active layer comprising at least one multi-quantum well portion;

[0036] a first conductive pad disposed on the first current spreading layer and located at one side of the active layer;

[0037] a second current spreading layer disposed at a side of the active layer away from the first current spreading layer, the second current spreading layer comprising at least one conductive portion; and

[0038] a second conductive pad disposed on a side of the second current spreading layer away from the first current spreading layer;

[0039] wherein in a projection based on a plane in which the first current spreading layer is located, a projection of the at least one multi-quantum well portion and a projection of the at least one conductive portion at least partially overlap, and a projection area of the at least one multi-quantum well portion and a projection area of the at least one conductive portion are different.

[0040] Optionally, in some embodiments of the present application, in the projection based on the plane in which the first current spreading layer is located, one of the projection of the at least one multi-quantum well portion and the projection of the at least one conductive portion is within the other.

[0041] Optionally, in some embodiments of the present application, in the projection based on the plane in which the first current spreading layer is located, the projection of the at least one multi-quantum well portion is within the projection of one of the conductive portions, and a projection area of the at least one multi-quantum well portion is smaller than a projection area of the conductive portion.

[0042] The active layer further comprises a first insulating portion located on at least one side of the multi-quantum well portion, and the conductive portion covers the multi-quantum well portion and the first insulating portion.

[0043] Optionally, in some embodiments of the present application, in a first direction parallel to a side of the substrate, a length of the multi-quantum well portion is smaller than a length of the conductive portion.

[0044] Optionally, in some embodiments of the present application, the number of the multi-quantum well portions is one, and the number of the second conductive pads is one, and in the projection based on the plane in which the first current spreading layer is located, a projection of the multi-quantum well portion at least partially overlaps with a projection of the second conductive pad.

[0045] Optionally, in some embodiments of the present application, the number of the multi-quantum well portions is at least two, and the first insulating portion is disposed between adjacent two of the multi-quantum well portions, each of the multi-quantum well portions corresponds to one of the second conductive pads, and at least two of the second conductive pads are connected and disposed on the conductive portion.

[0046] Optionally, in some embodiments of the present application, in the projection based on the plane in which the first current spreading layer is located, a projection of the at least one conductive portion is within a projection of one of the multi-quantum well portions, and a projection area of the at least one conductive portion is smaller than a projection area of the multi-quantum well portion.

[0047] The second current spreading layer further includes a second insulating portion located on at least one side of the conductive portion, and the conductive portion and the second insulating portion are disposed on the multi-quantum well portion.

[0048] Optionally, in some embodiments of the present application, the length of the conductive portion in a first direction parallel to a side of the first current spreading layer is less than the length of the multi-quantum well portion.

[0049] Optionally, in some embodiments of the present application, the number of the conductive portions is one, the number of the second conductive pads is one, and a projection of the multi-quantum well portion and a projection of the second conductive pad at least partially overlap in a normal projection based on a plane in which the first current spreading layer is located.

[0050] Optionally, in some embodiments of the present application, the number of the conductive portions is at least two, the insulating portion is disposed between adjacent two of the conductive portions, and one of the second conductive pads is connected and disposed on each of the conductive portions.

[0051] In another aspect, the embodiments of the present application further provide a light-emitting diode device, which includes:

[0052] a first current spreading layer;

[0053] an active layer disposed on the first current spreading layer;

[0054] a first conductive pad disposed on the first current spreading layer and located on one side of the active layer;

[0055] a second current spreading layer disposed on a side of the active layer away from the first current spreading layer; and

[0056] at least two second conductive pads disposed on a side of the second current spreading layer away from the first current spreading layer.

[0057] Optionally, in some embodiments of the present application, the active layer includes at least one multi-quantum well portion, and the second current spreading layer includes at least one conductive portion.

[0058] wherein, in a normal projection based on a plane in which the first current spreading layer is located, one of a projection of the at least one multi-quantum well portion and a projection of the at least one conductive portion is within the other, and the projection area of the at least one multi-quantum well portion and the projection area of the at least one conductive portion are different.

[0059] Optionally, in some embodiments of the present application, the active layer comprises a first insulating portion and at least two of the multi-quantum well portions, the first insulating portion is arranged between two adjacent multi-quantum well portions, each of the multi-quantum well portions corresponds to one of the second conductive pads, and at least two of the second conductive pads are arranged on the conductive portion.

[0060] In a projection of the first current spreading layer on a plane, projections of the at least two multi-quantum well portions are within a projection of the conductive portion, and a sum of areas of the projections of the at least two multi-quantum well portions is less than an area of the projection of the conductive portion.

[0061] Optionally, in some embodiments of the present application, the second current spreading layer further comprises a second insulating portion and at least two of the conductive portions, the second insulating portion is arranged between two adjacent conductive portions, and the conductive portions and the second insulating portion are arranged on the multi-quantum well portion, each of the conductive portions corresponds to one of the second conductive pads.

[0062] In a projection of the substrate on a plane, projections of the at least two conductive portions are within a projection of the multi-quantum well portion, and a sum of areas of the projections of the at least two conductive portions is less than an area of the projection of the multi-quantum well portion.

[0063] In another aspect, the embodiments of the present application further provide a display panel, comprising a driving substrate and a light-emitting diode device as described in any one of the above embodiments, and the light-emitting diode device is arranged on the driving substrate.

[0064] The display panel further comprises a plurality of lenses, and each of the lenses is arranged on a light-emitting side of each of the light-emitting diode devices.

[0065] Optionally, in some embodiments of the present application, in a top view of the display panel, the lenses fully cover the active layer and are located outside the first conductive pads.

[0066] The light-emitting diode device and the display panel provided by the embodiments of the present application can reduce the size of one of the multi-quantum well portion and the conductive portion, or use a multi-mode driving manner, so as to improve the working current density and improve the light-emitting efficiency.

[0067] The embodiments of the present application provide a light-emitting diode device and a display panel, which are described in detail below. It should be noted that the description order of the following embodiments is not used to limit the preferred order of the embodiments.

[0068] Please refer to FIG. 1 to FIG. 4, the embodiment of the present application provides a light emitting diode device 100, the light emitting diode device 100 can be a micro light emitting diode device, can also be a sub-millimeter light emitting diode device, but not limited to this.

[0069] The light emitting diode device 100 includes a first current spreading layer 12, an active layer 13, a first conductive pad 14, a second current spreading layer 15 and a second conductive pad 16.

[0070] The active layer 13 is disposed on the first current spreading layer 12, and the active layer 13 includes at least one multi-quantum well part 131. The first conductive pad 14 is disposed on the first current spreading layer 12 and located on one side of the active layer 13. The second current spreading layer 15 is disposed on the side of the active layer 13 away from the first current spreading layer 12. The second current spreading layer 15 includes at least one conductive part 151. The second conductive pad 16 is disposed on the side of the second current spreading layer 15 away from the first current spreading layer 12.

[0071] In some embodiments, the light emitting diode device 100 can also include a substrate 11, and the first current spreading layer 12 is disposed on the substrate 11. The active layer 13 is disposed on the side of the first current spreading layer 12 away from the substrate 11. Hereinafter, the light emitting diode device 100 including the substrate 11 is taken as an example for description, but not limited to this. For example, the light emitting diode device 100 does not include the substrate 11.

[0072] In the orthographic projection based on the plane in which the substrate 11 or the first current spreading layer 12 is located, the orthographic projection of the at least one multi-quantum well part 131 and the orthographic projection of the at least one conductive part 151 at least partially overlap, and the orthographic projection area of the at least one multi-quantum well part 131 and the orthographic projection area of the at least one conductive part 151 are not the same.

[0073] It should be explained that the orthographic projection area of the at least one multi-quantum well part 131 is the sum of the orthographic projection areas of all multi-quantum well parts 131, and the orthographic projection area of the at least one conductive part 151 is the sum of the orthographic projection areas of all conductive parts 151.

[0074] The light emitting diode device 100 of the embodiment of the present application reduces the size of one of the multi-quantum well part and the conductive part, so as to improve the working current density, thereby improving the WPE efficiency and the external quantum efficiency (EQE) while reducing the power consumption.

[0075] In addition, the embodiment disclosed in the present application does not change the overall size of the light emitting diode device 100, so the embodiment of the present application can meet the demand of the micro light emitting diode device 100 mass transfer process.

[0076] It can be understood that the current density is the value of the total current divided by the area of the quantum well layer. The external quantum efficiency is the number of electrons passing through the P-N junction of the light emitting diode device 100 per unit time.

[0077] In some embodiments, in the orthographic projection based on the plane where the substrate 11 or the first current spreading layer 12 is located, one of the orthographic projection of the at least one multi-quantum well part 131 and the orthographic projection of the at least one conductive part 151 is within the other. Such a setting can save layout space.

[0078] It can be understood that one of the orthographic projection of the at least one multi-quantum well part 131 and the orthographic projection of the at least one conductive part 151 is within the other, which can be the orthographic projection of the entire multi-quantum well part 131 within the orthographic projection of the entire conductive part 151, or the orthographic projection of the entire conductive part 151 within the orthographic projection of the entire multi-quantum well part 131.

[0079] Wherein, when the orthographic projection of the entire multi-quantum well part 131 is within the orthographic projection of the entire conductive part 151, the embodiments of the present application reduce the size of the quantum well layer; when the orthographic projection of the entire conductive part 151 is within the orthographic projection of the entire multi-quantum well part 131, the embodiments of the present application reduce the size of the conductive part 151.

[0080] Optionally, the substrate 11 can be a hard substrate or a flexible substrate. For example, but not limited to, sapphire, silicon, gallium nitride, silicon carbide, glass, polyimide.

[0081] Optionally, the first current spreading layer 12 can be an N-GaN layer, but is not limited thereto. The conductive part 151 of the second current spreading layer 15 can be a P-GaN part, but is not limited thereto.

[0082] Optionally, the multi-quantum well part can be formed by stacking a plurality of quantum well layers.

[0083] Optionally, the first conductive pad 14 is the output terminal of the light emitting diode device 100, and the second conductive pad 16 is the input terminal of the light emitting diode device 100. The materials of the first conductive pad 14 and the second conductive pad 16 can each be at least one of a metal, a metal alloy, and a metal oxide. The first conductive pad 14 and the second conductive pad 16 can each be a single film layer or a stack of multiple film layers, such as Ti / Al / Ti / Au.

[0084] Optionally, the light emitting diode device 100 can further include a reflective layer 17 covering the second current spreading layer 15. Wherein, the reflective layer 17 is provided with an opening exposing the second current spreading layer 15, and the second conductive pad 16 covers the opening and connects the second current spreading layer 15.

[0085] Optionally, the reflective layer 17 can be a Bragg reflective layer or a mirror reflective layer.

[0086] Optionally, FIGS. 1-4 show a schematic diagram of the light-emitting diode device 100 in which the second current spreading layer 15 is kept as a whole layer of conductive layer, i.e., the conductive part 151 is equivalent to the second current spreading layer 15, and the size of the quantum well layer is reduced.

[0087] In FIGS. 1-4, the first direction F1 can be a direction parallel to one side of the light-emitting diode device 100 in a plan view, and can be, for example, a lateral direction of the light-emitting diode device 100. The second direction F2 can be a direction parallel to another side of the light-emitting diode device 100 in a plan view, and can be a longitudinal direction of the light-emitting diode device 100. The third direction F3 can be a thickness direction of the light-emitting diode device 100.

[0088] Optionally, the light-emitting diode device 100 is rectangular, the first direction F1 is a long side direction of the light-emitting diode device 100, and the second direction F2 is a short side direction of the light-emitting diode device 100, but is not limited thereto. For example, the light-emitting diode device 100 can be square. Of course, in some other embodiments, the light-emitting diode device 100 can also be circular, rhombic, or other shapes.

[0089] In some embodiments of the present application, in a normal projection based on the substrate 11 or the plane in which the first current spreading layer 12 is located, a normal projection of the at least one multi-quantum well part 131 is within a normal projection of a conductive part 151, and the area of the normal projection of the at least one multi-quantum well part 131 is smaller than the area of the normal projection of the conductive part 151.

[0090] The active layer 13 further includes a first insulating part 132 located on at least one side of the multi-quantum well part 131. The conductive part 151 covers the multi-quantum well part 131 and the first insulating part 132.

[0091] It should be understood that the embodiments disclosed in the present application reduce the area of the multi-quantum well part 131, thereby increasing the current density of the multi-quantum well part 131, and improving the WPE efficiency and external quantum efficiency (EQE) of the light-emitting diode device 100 while reducing power consumption.

[0092] Secondly, the reduction of the area of the multi-quantum well part 131 forms a focusing effect in the multi-quantum well part 131, which promotes the recombination rate of holes and electrons, thereby improving the light-emitting efficiency. Thirdly, the reduction of the area of the multi-quantum well part 131 optimizes the injection conditions, which makes the injection of holes and electrons in the multi-quantum well part 131 more efficient, reduces the loss of non-radiative recombination, and improves the light-emitting efficiency.

[0093] It should be explained that Figs. 1 to 4 show a schematic diagram of one multi-quantum well part 131 in combination with one second conductive pad 16, wherein in a normal projection based on a plane in which the substrate 11 or the first current spreading layer 12 is located, a normal projection of the multi-quantum well part 131 at least partially overlaps with a normal projection of the second conductive pad 16. However, embodiments of the present application are not limited thereto, for example, at least two multi-quantum well parts 131 in combination with one second conductive pad 16.

[0094] In Figs. 1 to 2, the multi-quantum well part 131 is provided with the first insulating part 132 on both sides. In Figs. 3 to 4, the multi-quantum well part 131 is provided with the first insulating part 132 on a side away from the first conductive pad 14. The multi-quantum well part 131 is close to the first conductive pad 14, which can shorten the path of the current and improve the light emitting efficiency.

[0095] Optionally, in some embodiments of the present application, in a first direction F1 parallel to a side edge of the substrate 11 and / or the first current spreading layer 12, the length of the multi-quantum well part 131 is less than the length of the conductive part 151.

[0096] That is, by shortening the length of the multi-quantum well part 131, the area of the multi-quantum well part 131 is reduced, and the current density of the multi-quantum well part 131 is improved.

[0097] Optionally, in some embodiments of the present application, in the first direction F1, the length of the multi-quantum well part 131 is less than 2 / 3 of the length of the substrate 11.

[0098] It can be understood that the length ratio of the quantum well layer of the existing light emitting diode to the length of the light emitting diode is generally 2 / 3. Therefore, the light emitting diode device 100 of the embodiment of the present application shortens the length ratio of the multi-quantum well part 131 to reduce the area of the multi-quantum well part 131 and improve the current density of the multi-quantum well part 131.

[0099] Please refer to Fig. 5, which shows an embodiment of two multi-quantum well parts 131 in combination with two second conductive pads 16. The following will set forth the different parts of the light emitting diode device 100 corresponding to the embodiments of Figs. 1 to 4 to avoid redundant set forth.

[0100] Optionally, in some embodiments of the present application, the number of the multi-quantum well part 131 is at least two. The first insulating part 132 is arranged between the adjacent two multi-quantum well parts 131. Each multi-quantum well part 131 corresponds to one second conductive pad 16, and the at least two second conductive pads 16 are connected and arranged on the conductive part 151.

[0101] It can be understood that, in the case of the total area of the multi-quantum well part 131 being reduced, the multi-mode driving of the light-emitting diode device 100 is performed by using at least two second conductive pads 16, so that different driving modes can be selected according to different current density requirements to match the optimal WPE efficiency of the light-emitting diode device 100.

[0102] Optionally, in some embodiments of the present application, the at least two second conductive pads 16 can be connected to the same current or different currents. The areas of two second conductive pads 16 in the at least two second conductive pads 16 can be the same or different.

[0103] Optionally, in some embodiments of the present application, in the at least two second conductive pads 16, at least one second conductive pad 16 is closer to the first conductive pad 14 to form different current path lengths.

[0104] In the single second conductive pad 16 driving mode, the second conductive pad 16 with the shortest current path length can be selected as the input end, so that the distribution area of the current can be reduced, that is, the effective area through which the current passes is reduced, and thus the effective current density is substantially increased.

[0105] Taking the embodiment corresponding to FIG. 5 as an example, the two second conductive pads 16 are respectively a first input pad 161 and a second input pad 162. The first input pad 161 and the second input pad 162 can be connected to the same current. The area of the first input pad 161 and the area of the second input pad 162 can be the same.

[0106] Compared with the first input pad 161, the second input pad 162 is closer to the first conductive pad 14, so that, in the single-drive mode, compared with the first input pad 161 as the input end, the second input pad 162 as the input end has a shorter current path, so that the current can not flow through the total area of all the multi-quantum well parts 131, that is, the local area of the multi-quantum well part 131 is not utilized, which indirectly reduces the effective area of the multi-quantum well part 131, so that the light-emitting diode device 100 has a higher effective current density, and thus the WPE and EQE effects are improved.

[0107] Compared with the single-drive mode, in the double-drive mode, the first input pad 161 and the second input pad 162 are connected to the current under the same total current, the distribution area of the current is larger, the current distribution is more uniform, the multi-quantum well part 131 is more utilized, that is, the effective area of the multi-quantum well part 131 is larger. Therefore, under the same total current, the effective current density of the double-drive mode is smaller.

[0108] Of course, in some other embodiments, the current density can also be adjusted by adjusting the total current, such as the first input pad 161 constantly accessing the first current and the second input pad 162 constantly accessing the second current. Then in the single-drive mode, only the first current or the second current is accessed; in the dual-drive mode, the first current and the second current are simultaneously accessed. Compared with the single-drive mode, the total current in the dual-drive mode is larger, and the current density is larger.

[0109] Optionally, in some embodiments of the present application, the sum of the lengths of all the multi-quantum well portions 131 in the first direction F1 parallel to the side of the substrate 11 and / or the first current spreading layer 12 is less than the length of the conductive portion 151.

[0110] That is, by shortening the length of the multi-quantum well portion 131, the area of the multi-quantum well portion 131 is reduced, thereby increasing the current density of the multi-quantum well portion 131.

[0111] Optionally, in some embodiments of the present application, the sum of the lengths of all the multi-quantum well portions 131 in the first direction F1 is less than 2 / 3 of the length of the substrate 11.

[0112] It can be understood that the length ratio of the quantum well layer of the existing light-emitting diode to the length of the light-emitting diode is generally 2 / 3. Therefore, the light-emitting diode device 100 of the embodiment shortens the length ratio of the multi-quantum well portion 131 to reduce the area of the multi-quantum well portion 131 and thereby increase the current density of the multi-quantum well portion 131.

[0113] Please refer to FIGS. 6-7, which show schematic diagrams of the light-emitting diode device 100 in which the entire active layer 13 is a multi-quantum well layer, that is, the multi-quantum well portion 131 is equivalent to the active layer 13, and the size of the conductive portion 151 is reduced.

[0114] In FIGS. 6-7, only the parts different from the light-emitting diode device 100 of the embodiment corresponding to FIGS. 1-4 will be described to avoid redundant description.

[0115] Optionally, in some embodiments of the present application, in the orthographic projection based on the substrate 11 or the first current spreading layer 12, the orthographic projection of the at least one conductive portion 151 is within the orthographic projection of a multi-quantum well portion 131, and the orthographic projection area of the at least one conductive portion 151 is less than the orthographic projection area of the multi-quantum well portion 131.

[0116] The second current spreading layer 15 further comprises a second insulating portion 152 located on at least one side of the conductive portion 151, and the conductive portion 151 and the second insulating portion 152 are arranged on the multi-quantum well portion 131.

[0117] It needs to be understood that, by reducing the area of the conductive part 151, the current per unit area on the smaller area conductive part 151 increases under the same current; on the other hand, the reduction of the area of the conductive part 151 reduces the path length of the lateral diffusion of the current in the conductive part 151, reduces the area utilization rate of the multi-quantum well part 131, that is, indirectly reduces the effective area (the actual current passing area) of the multi-quantum well part 131, thereby improving the effective current density, thereby improving the WPE efficiency and external quantum efficiency (EQE) efficiency of the light-emitting diode device 100 while reducing power consumption.

[0118] Secondly, the reduction of the area of the conductive part 151 causes the current to form a focusing effect, so that more holes flow to the multi-quantum well part, thereby improving the concentration and recombination rate of the holes in the multi-quantum well part 131, and further improving the light-emitting efficiency; in addition, based on the reduction of the lateral diffusion path of the current in the conductive part 151, thereby reducing the recombination loss of the holes before reaching the multi-quantum well part 131, thereby improving the light-emitting efficiency.

[0119] It needs to be explained that Figs. 6-7 show a schematic view of one conductive part 151 matched with one second conductive pad 16, wherein, in the orthographic projection based on the plane in which the substrate 11 or the first current spreading layer 12 is located, the orthographic projection of the multi-quantum well part 131 at least partially overlaps with the orthographic projection of the second conductive pad 16. However, the embodiments of the present application are not limited thereto, for example, at least two conductive parts 151 are matched with one second conductive pad 16.

[0120] In Figs. 6-7, the second insulating part 152 is arranged on the side of the conductive part 151 away from the first conductive pad 14. The conductive part 151 is close to the first conductive pad 14, which can shorten the path of the current and improve the light-emitting efficiency.

[0121] Optionally, in some embodiments of the present application, in a first direction parallel to one side of the substrate 11 and / or the first current spreading layer 12, the length of the conductive part 151 is less than the length of the multi-quantum well part 131.

[0122] That is, by shortening the length of the conductive part 151, the effect of reducing the area of the conductive part 151 is achieved, and the effective current density of the multi-quantum well part 131 is further improved.

[0123] Optionally, in some embodiments of the present application, in the first direction, the length of the conductive part 151 is less than 2 / 3 of the length of the substrate 11.

[0124] It can be understood that the length ratio of the P-GaN layer of the existing light-emitting diode to the length of the light-emitting diode is generally 2 / 3, so the light-emitting diode device 100 of the embodiment of the present application reduces the length ratio of the conductive part 151 to reduce the area of the conductive part 151 and further improve the effective current density of the multi-quantum well part 131.

[0125] Please refer to FIG. 8, which shows an embodiment of two conductive parts 151 matched with two second conductive pads 16. The different parts of the light-emitting diode device 100 corresponding to the embodiments of FIGS. 6-7 will be described below to avoid redundant description.

[0126] Optionally, in some embodiments of the present application, the number of conductive parts 151 is at least two. A second insulating part 152 is arranged between the two adjacent conductive parts 151. One second conductive pad 16 is connected and arranged on each conductive part 151.

[0127] It can be understood that in the case of reducing the total area of the conductive part 151, the multi-mode driving of the light-emitting diode device 100 by using at least two second conductive pads 16 makes it possible to select different driving modes according to different current density requirements to match the optimal WPE efficiency of the light-emitting diode device 100.

[0128] Optionally, in some embodiments of the present application, at least one second conductive pad 16 is closer to the first conductive pad 14 among the at least two second conductive pads 16 to form different current path lengths.

[0129] If single second conductive pad 16 driving is performed, the second conductive pad 16 with the shortest current path length can be selected as the input end, which can reduce the current distribution area, i.e., the effective area through which the current passes, thereby substantially improving the effective current density.

[0130] Taking the embodiment corresponding to FIG. 8 as an example, the two second conductive pads 16 are respectively a first input pad 161 and a second input pad 162. The first input pad 161 and the second input pad 162 can be connected to the same current, but are not limited to this. The area of the first input pad 161 and the area of the second input pad 162 can be the same, but are not limited to this.

[0131] Compared with the first input pad 161, the second input pad 162 is closer to the first conductive pad 14, so in the single-drive mode, compared with the first input pad 161 as the input end, the second input pad 162 as the input end has a shorter current path, so that the current can not flow through the entire multi-quantum well part 131, i.e., the local area of the multi-quantum well part 131 is not utilized, the effective area of the multi-quantum well part 131 is reduced, so that the light-emitting diode device 100 has a higher effective current density, thereby improving the WPE and EQE effects.

[0132] Compared with the single-drive mode, in the double-drive mode, the first input pad 161 and the second input pad 162 are connected to the current, the distribution area of the current is larger, the current distribution is more uniform, the utilization rate of the area of the multi-quantum well part 131 is higher, and the effective area of the multi-quantum well part 131 is larger. Therefore, under the condition of the same total current, the effective current density of the double-drive mode is smaller.

[0133] Of course, in some other embodiments, the current density can also be adjusted by adjusting the total current, for example, the first input pad 161 is connected to the first current, and the second input pad 162 is connected to the second current. Then, in the single-drive mode, only the first current or the second current is connected; in the double-drive mode, the first current and the second current are connected at the same time. Compared with the single-drive mode, the total current in the double-drive mode is larger, and the current density is larger.

[0134] Optionally, in some embodiments of the present application, the sum of the lengths of all the conductive parts 151 in the first direction F1 parallel to the side of the substrate 11 and / or the first current spreading layer 12 is less than the length of the multi-quantum well part 131.

[0135] That is, by shortening the total length of the conductive part 151, the area of the conductive part 151 is reduced, and the effective current density of the multi-quantum well part 131 is improved.

[0136] Optionally, in some embodiments of the present application, in the first direction F1, the sum of the lengths of all the conductive parts 151 is less than 2 / 3 of the length of the substrate 11.

[0137] It can be understood that the length ratio of the second current spreading layer of the existing light-emitting diode to the length of the light-emitting diode is generally 2 / 3. Therefore, the light-emitting diode device 100 of the embodiment of the present application reduces the length ratio of the conductive part 151 to reduce the area of the conductive part 151 and improve the effective current density of the multi-quantum well part 131.

[0138] Please refer to FIG. 9, which shows the light-emitting diode device 100 of one or more embodiments of the present application. In FIG. 9, only the different parts from the above-mentioned embodiments will be described to avoid redundant description.

[0139] In the light emitting diode device 100, the first current spreading layer 12 is disposed on the substrate 11. The active layer 13 is disposed on the side of the first current spreading layer 12 away from the substrate 11, and the active layer 13 comprises at least one multi-quantum well part 131. The first conductive pad 14 is disposed on the side of the first current spreading layer 12 away from the substrate 11 and on the side of the active layer 13. The second current spreading layer 15 is disposed on the side of the active layer 13 away from the substrate 11. The second current spreading layer 15 comprises at least one conductive part 151. At least two second conductive pads 16 are disposed on the side of the second current spreading layer 15 away from the substrate 11.

[0140] It can be understood that the light emitting diode device 100 of one or more embodiments disclosed in the present application adopts a multi-drive mode, and the light emitting diode device 100 is driven so that different drive modes can be selected according to different current density requirements to match the optimal WPE efficiency of the light emitting diode device 100.

[0141] In FIG. 9, the whole layer active layer 13 is a quantum well layer, that is, a single multi-quantum well part 131 is the whole layer active layer 13. The whole layer second current spreading layer 15 is a conductive layer, that is, a single conductive part 151 is the whole layer second current spreading layer 15.

[0142] That is, without reducing the area of the multi-quantum well part 131 and the area of the conductive part 151, only by selecting the corresponding drive mode, the optimal WPE effect of the light emitting diode device 100 can be achieved.

[0143] Optionally, in some embodiments, in the orthographic projection based on the plane in which the substrate 11 or the first current spreading layer 12 is located, one of the orthographic projection of the at least one multi-quantum well part 131 and the orthographic projection of the at least one conductive part 151 is within the other, and the orthographic projection area of the at least one multi-quantum well part 131 and the orthographic projection area of the at least one conductive part 151 are not the same.

[0144] It should be noted that the area of the multi-quantum well part 131 or the area of the conductive part 151 is reduced to improve the WPE effect.

[0145] Optionally, in some embodiments of the present application, the active layer 13 comprises a first insulating part 132 and at least two multi-quantum well parts 131, and the first insulating part 132 is disposed between adjacent two multi-quantum well parts 131. Each multi-quantum well part 131 corresponds to one second conductive pad 16, and the at least two second conductive pads 16 are connected and disposed on the conductive part 151.

[0146] In a normal projection based on a plane in which the substrate 11 or the first current spreading layer 12 is located, normal projections of the at least two multi-quantum well portions 131 are within a normal projection of the one conductive portion 151, and a sum of normal projection areas of the at least two multi-quantum well portions 131 is less than a normal projection area of the conductive portion 151.

[0147] It should be noted that the technical solutions described above are similar or identical to the embodiments of the light emitting diode device 100 corresponding to FIG. 5, and details are described with reference to the embodiments of the light emitting diode device 100 corresponding to FIG. 5, which will not be described here.

[0148] Optionally, in some embodiments of the present application, the second current spreading layer 15 further includes a second insulating portion 152 and at least two conductive portions 151. The second insulating portion 152 is located between two adjacent conductive portions 151. The conductive portion 151 and the second insulating portion 152 are arranged on the multi-quantum well portion 131, and one second conductive pad 16 is arranged on each conductive portion 151.

[0149] In a normal projection based on a plane in which the substrate 11 is located, normal projections of the at least two conductive portions 151 are within a normal projection of the one multi-quantum well portion 131, and a sum of normal projection areas of the at least two conductive portions 151 is less than a normal projection area of the multi-quantum well portion 131.

[0150] It should be noted that the technical solutions described above are similar or identical to the embodiments of the light emitting diode device 100 corresponding to FIG. 8, and details are described with reference to the embodiments of the light emitting diode device 100 corresponding to FIG. 8, which will not be described here.

[0151] Please refer to FIG. 10, which shows a display panel 1000 including the light emitting diode device 100 of any one of the above embodiments.

[0152] The embodiments of the present application also provide a display panel 1000, which includes a driving substrate 200 and the light emitting diode device 100 according to any one of the above embodiments, and the light emitting diode device 100 is arranged on the driving substrate 200.

[0153] The display panel 1000 further includes a plurality of lenses 300, and one lens 300 is arranged on the light emitting side of one light emitting diode device 100.

[0154] It should be noted that the structure of the light emitting diode device 100 of the display panel 1000 of the embodiments of the present application is similar or identical to the structure of the light emitting diode device 100 of any one of the above embodiments, and thus will not be described here.

[0155] Optionally, the light emitting diode device 100 of the display panel 1000 can include the substrate 11 or can not include the substrate 11.

[0156] It can be understood that the lens 300 has a light condensing effect, and the light emitting efficiency of the light emitting diode device 100 can be improved.

[0157] Optionally, the lens 300 fully covers the light emitting diode device 100.

[0158] In some embodiments of the present application, the display panel 1000 can further include an encapsulation layer 400 encapsulating the plurality of light emitting diode devices 100. The lens 300 is disposed on a side of the encapsulation layer 400 away from the light emitting diode device 100.

[0159] Please refer to FIG. 11, which shows a corresponding embodiment of a lens 300 with a smaller size. In FIG. 11, only the parts different from the embodiment corresponding to FIG. 10 will be described to avoid redundant description.

[0160] Optionally, in some embodiments of the present application, in a top plan view of the display panel 1000, the lens 300 fully covers the active layer 13 and is located outside the first conductive pad 14.

[0161] The display panel 1000 of the embodiments of the present application reduces the aperture of the lens 300, and accordingly reduces the thickness of the lens 300, so as to use a yellow light process instead of a stamping or film pasting process, thereby maintaining the alignment accuracy while reducing the process cost.

[0162] In addition, since the lens 300 fully covers the light emitting diode device 100, the aperture of the lens 300 is large, which causes the center line of the lens 300 to deviate from the center line of the active layer 13. Therefore, the embodiment corresponding to FIG. 11 uses a lens 300 with a smaller aperture, which only needs to cover the active layer 13, so that the center line of the lens 300 coincides with the center line of the active layer 13, thereby improving the symmetry of light emission.

[0163] The above describes in detail a light emitting diode device and a display panel provided by the embodiments of the present application. The principles and embodiments of the present application are described by applying specific examples, and the above description of the embodiments is only used to help understand the method and core idea of the present application; at the same time, for those skilled in the art, the specific embodiments and application range can be changed according to the idea of the present application, and the above description of the embodiments should not be understood as limiting the present application.

Claims

1. A light emitting diode device, comprising: a first current spreading layer; an active layer disposed on the first current spreading layer, the active layer comprising at least one multiple quantum well portion; a first conductive pad disposed on the first current spreading layer and located at one side of the active layer; a second current spreading layer disposed on a side of the active layer away from the first current spreading layer, the second current spreading layer comprising at least one conductive portion; and a second conductive pad disposed on a side of the second current spreading layer away from the first current spreading layer; in a projection based on a plane in which the first current spreading layer is located, a projection of the at least one multiple quantum well portion and a projection of the at least one conductive portion at least partially overlap, and an area of the projection of the at least one multiple quantum well portion and an area of the projection of the at least one conductive portion are different. in the projection based on the plane in which the first current spreading layer is located, one of the projection of the at least one multiple quantum well portion and the projection of the at least one conductive portion is within the other.

2. The light emitting diode device of claim 1, wherein, in the projection based on the plane in which the first current spreading layer is located, the projection of the at least one multiple quantum well portion is within the projection of one of the conductive portions, and an area of the projection of the at least one multiple quantum well portion is smaller than an area of the projection of the conductive portion; 3. The light emitting diode device of claim 2, wherein, the active layer further comprises a first insulating portion located at least one side of the multiple quantum well portion, and the conductive portion covers the multiple quantum well portion and the first insulating portion. in a first direction parallel to a side edge of the first current spreading layer, a length of the multiple quantum well portion is smaller than a length of the conductive portion.

4. The light emitting diode device of claim 3, wherein, the number of the multiple quantum well portions is one, and the number of the second conductive pads is one, in the projection based on the plane in which the first current spreading layer is located, the projection of the multiple quantum well portion and the projection of the second conductive pad at least partially overlap.

5. The light emitting diode device of claim 3 or 4, wherein, the number of the multiple quantum well portions is at least two, and the first insulating portion is disposed between adjacent two of the multiple quantum well portions, each of the multiple quantum well portions corresponds to one of the second conductive pads, and at least two of the second conductive pads are connected to be disposed on the conductive portion.

6. The light emitting diode device of claim 3 or 4, wherein, in the projection based on the plane in which the first current spreading layer is located, the projection of the at least one conductive portion is within the projection of one of the multiple quantum well portions, and an area of the projection of the at least one conductive portion is smaller than an area of the projection of the multiple quantum well portion; 7. The light emitting diode device of claim 2, wherein, the second current spreading layer further comprises a second insulating portion located at least one side of the conductive portion, and the conductive portion and the second insulating portion are disposed on the multiple quantum well portion. in the first direction parallel to a side edge of the first current spreading layer, a length of the conductive portion is smaller than a length of the multiple quantum well portion.

8. The light emitting diode device of claim 7, wherein, the number of the conductive portions is one, and the number of the second conductive pads is one, in the projection based on the plane in which the first current spreading layer is located, the projection of the multiple quantum well portion and the projection of the second conductive pad at least partially overlap.

9. The light emitting diode device of claim 7 or 8, wherein, ​ 10. The light emitting diode device of claim 7 or 8, wherein, The number of the conductive parts is at least two, and the second insulating part is arranged between two adjacent conductive parts, and one second conductive pad is arranged on each conductive part.

11. The light emitting diode device of any of claims 1-2, wherein, The light emitting diode device comprises a substrate, the first current spreading layer is arranged on the substrate, and the active layer is arranged on the side of the first current spreading layer away from the substrate; In the orthographic projection based on the plane where the substrate is located, the orthographic projection of the at least one multi-quantum well part and the orthographic projection of the at least one conductive part at least partially overlap, and one of the orthographic projection of the at least one multi-quantum well part and the orthographic projection of the at least one conductive part is within the other.

12. The light emitting diode device of claim 11, wherein, In the orthographic projection based on the plane where the substrate is located, the orthographic projection of the at least one multi-quantum well part is within the orthographic projection of one conductive part, and the area of the orthographic projection of the at least one multi-quantum well part is smaller than the area of the orthographic projection of the conductive part. In the first direction parallel to one side edge of the substrate, the length of the multi-quantum well part is smaller than 2 / 3 of the length of the substrate.

13. The light emitting diode device of claim 11, wherein, In the orthographic projection based on the plane where the substrate is located, the orthographic projection of the at least one conductive part is within the orthographic projection of one multi-quantum well part, and the area of the orthographic projection of the at least one conductive part is smaller than the area of the orthographic projection of the multi-quantum well part. In the first direction parallel to one side edge of the substrate, the length of the conductive part is smaller than 2 / 3 of the length of the substrate.

14. A light emitting diode device, comprising: a first current spreading layer; an active layer arranged on the first current spreading layer; a first conductive pad arranged on the first current spreading layer and located on one side of the active layer; a second current spreading layer arranged on the side of the active layer away from the first current spreading layer; and at least two second conductive pads arranged on the side of the second current spreading layer away from the first current spreading layer. The active layer comprises at least one multi-quantum well part, and the second current spreading layer comprises at least one conductive part; 15. The light emitting diode device of claim 14, wherein, In the orthographic projection based on the plane where the first current spreading layer is located, one of the orthographic projection of the at least one multi-quantum well part and the orthographic projection of the at least one conductive part is within the other, and the area of the orthographic projection of the at least one multi-quantum well part and the area of the orthographic projection of the at least one conductive part are different. The active layer comprises a first insulating part and at least two multi-quantum well parts, the first insulating part is arranged between two adjacent multi-quantum well parts, each multi-quantum well part corresponds to one second conductive pad, and at least two second conductive pads are arranged on the conductive part in connection; 16. The light emitting diode device of claim 15, wherein, In the orthographic projection based on the plane where the first current spreading layer is located, the orthographic projection of the at least two multi-quantum well parts is within the orthographic projection of one conductive part, and the sum of the areas of the orthographic projections of the at least two multi-quantum well parts is smaller than the area of the orthographic projection of the conductive part. ​ 17. The light emitting diode device of claim 15, wherein, The second current spreading layer further comprises a second insulating portion and at least two of the conductive portions, the second insulating portion is located between two adjacent conductive portions, the conductive portions and the second insulating portion are arranged on the multi-quantum well portion, and one second conductive pad is arranged on each of the conductive portions; In a projection based on a projection plane of the first current spreading layer, projections of the at least two conductive portions are within a projection of one multi-quantum well portion, and a sum of areas of the projections of the at least two conductive portions is less than an area of the projection of the multi-quantum well portion.

18. A display panel comprising a driving substrate and the light-emitting diode device according to any one of claims 1-17, wherein the light-emitting diode device is arranged on the driving substrate. wherein The display panel further comprises a plurality of lenses, and one lens is arranged on a light-emitting side of one light-emitting diode device.

19. The display panel of claim 18, wherein, In a top view of the display panel, the lenses fully cover the active layer and are located outside the first conductive pads.

20. The display panel of claim 18, wherein, The lenses fully cover the light-emitting diode device.

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