Cubic boron nitride thin film structure, and cutting tool and manufacturing method and apparatus therefor

Abstract

The present application relates to a thin film structure, a cubic boron nitride thin film structure, and a cutting tool and a manufacturing method and apparatus therefor. The thin film structure comprises a preliminary bonding layer, an intermediate bonding layer and NCD, wherein the primary bonding layer comprises one of CrN and TiN; and the intermediate bonding layer comprises at least one of an oxide thin film and an oxynitride thin film. By using the preliminary bonding layer such as chromium nitride or titanium nitride in conjunction with the intermediate bonding layer and then bonding same to nano-polycrystalline diamond, a thin film formed by the nano-polycrystalline diamond is prevented from being influenced by cobalt on the surface of a related tool such as a hard alloy on the premise of retaining the hardness of the nano-polycrystalline diamond, such that cobalt on the surface of the hard alloy does not need to be removed; therefore, a process for removing cobalt on the surface of the hard alloy by using a chemical solution is avoided on the premise of maintaining the smoothness of the surface of the tool, thereby achieving the advantages of simple procedure and low pollution.

Description

Cubic boron nitride thin film structure, cutting tool and manufacturing method and equipment thereof TECHNICAL FIELD

[0001] The present application relates to the field of thin film processing, in particular to thin film structure, cubic boron nitride thin film structure, cutting tool and manufacturing method and equipment thereof. BACKGROUND

[0002] The surface of cutting tools, such as knives, usually needs to be deposited with a hard thin film. Whether the thin film can be applied to cutting tools depends on whether the thin film is firmly combined with the substrate of the cutting tool. The thin film that is not firmly combined has no practical value. The substrate of the cutting tool is mostly high-speed steel and hard alloy. If nano-polycrystalline diamond is directly deposited, the carbon atoms of the nano-polycrystalline diamond and the iron atoms of the high-speed steel, or the cobalt atoms in the hard alloy, will chemically react at high temperature, decompose the structure of the diamond, and eventually cause the failure of the nano-polycrystalline diamond thin film.

[0003] The traditional method is to first remove the cobalt element on the surface of the tool by using chemical liquid, and then deposit the nano-polycrystalline diamond thin film. For example, Murakami's Solution is used for 10 minutes, which is 10g K3(CN)6+10g KOH+100mL H2O, and then Caro's acid is used for 10 seconds, which includes 3mL H2SO4(96%)+88mL H2O2(30%), to remove the cobalt element on the surface of the hard alloy. This is done to prevent the existence of cobalt element from causing carbon to form SP2 graphite structure, which leads to the failure to form SP3 diamond structure.

[0004] However, this method inevitably causes the surface of the tool to be rough, which directly affects the smoothness of the surface after the deposition of the nano-polycrystalline diamond, and the process is complicated, and the chemical waste water is seriously polluted.

[0005] For example, EP0503822A1 points out that the coating of diamond-coated hard materials has insufficient bonding strength with the substrate, resulting in easy peeling of the coating and greatly shortening the service life. The main reason is that diamond cannot form an intermediate layer with all materials and has poor bonding with other materials. The prior art finds that by forming a protrusion with high bonding strength with the substrate on the surface of the substrate by chemical or mechanical means, and then forming a diamond coating thereon, the protrusion is embedded in the coating, which can greatly improve the bonding strength of the coating with the substrate. This is because the structure increases the contact area of the coating with the substrate, and the protrusion plays a "anchoring" role in the coating, preventing the coating from peeling off. The core technical solution of the invention is: forming a diamond and / or diamond-like carbon coating on the surface of the hard material (substrate), and at least one intermediate layer is arranged between the surface of the substrate and the coating, and the interface between the outermost surface of the intermediate layer and the coating needs to have micro-roughness. However, this method sacrifices the smoothness of the tool surface, causing the tool surface to be rough, and only a matte finish can be achieved, not a glossy finish.

[0006] CN108220916A discloses a preparation method of GNCD-cBN nano-composite multilayer coated tool with toughening mechanism, which forms a composite coating by gradient nano-diamond (GNCD) and cubic boron nitride (cBN) alternately growing. The nano-diamond coating is a gradient coating, and the main feature is that the diamond coating is a gradient nano-diamond coating with "high content sp 3 carbon + high content sp 2 carbon + high content sp 3 carbon" structure. In this prior art, plasma glow cleaning is required after each layer is deposited, and NCD layer is deposited after cleaning. That is, each layer of the composite multilayer structure needs to be cleaned after deposition, which is complicated, and the present application simplifies it.

[0007] Huang L, Wang T, Tang Y B. Research progress of adhesion between diamond film and cemented carbide tool[J]. Integration Technology, 2017, 6(4): 29-37. The main problem limiting the large-scale industrial application of CVD diamond coated cemented carbide tool is the poor adhesion between diamond coating and cemented carbide tool. A large number of experimental studies have shown that selecting appropriate substrate materials, appropriately treating the surface of the cemented carbide substrate (such as chemical treatment of the substrate surface), adding a transition layer between the substrate and the thin film, and reasonably controlling the deposition process of the thin film can all improve the adhesion between the diamond thin film and the substrate. Chemical decobalt treatment can effectively improve the adhesion between the thin film and the substrate, but has limitations: (1) During the deposition of the diamond thin film, Co in the substrate that has not been etched will still diffuse to the surface layer, promoting the formation of non-diamond phases; (2) The absence of Co in the substrate will greatly reduce the strength of the substrate, and when the etching depth of Co is greater than the average grain size of WC, a brittle Co-poor layer will be formed, which will cause brittle cracking of the tool at this point during tool use, resulting in tool failure; (3) Chemical decobalt treatment cannot avoid the uneven distribution and size of pores, and the Co accumulation area after etching is converted into a large deep pit. SUMMARY

[0008] Therefore, it is necessary to provide a thin film structure, a nanodiamond structure, a cubic boron nitride thin film structure, a cutting tool, and a manufacturing method and equipment thereof.

[0009] In one embodiment, a thin film structure includes a preliminary bonding layer-intermediate bonding layer-NCD; wherein,

[0010] The preliminary bonding layer includes one of CrN and TiN;

[0011] The intermediate bonding layer includes at least one of an oxide thin film and an oxynitride thin film.

[0012] Preferably, NCD refers to nanocrystalline diamond.

[0013] The above thin film structure uses a preliminary bonding layer such as chromium nitride or titanium nitride in combination with an intermediate bonding layer to bond nanodiamond, under the premise of having diamond carbon atoms, so that the cobalt element on the surface of the related tool such as cemented carbide does not affect the thin film formed by nanodiamond, thereby eliminating the need to remove the cobalt element on the surface of the cemented carbide, and thus avoiding the process of removing the cobalt element on the surface of the cemented carbide using chemical solution, thereby having the advantages of simple process and small pollution.

[0014] In one embodiment, the thin film structure further includes cBN, forming a preliminary bonding layer-intermediate bonding layer-NCD-cBN thin film.

[0015] In one embodiment, a cubic boron nitride film structure includes a preliminary bonding layer - an intermediate bonding layer - a nanocrystalline diamond (NCD) layer - a cBN layer; wherein,

[0016] The preliminary bonding layer includes one of CrN and TiN.

[0017] The intermediate bonding layer includes at least one of an oxide film and an oxynitride film.

[0018] In one embodiment, the intermediate bonding layer includes at least one of AlCrON, AlCrO, AlCrSiON, AlCrSiCON, CrSiCON, SiON and SiCON.

[0019] In one embodiment, a cutting tool includes a cutting tool substrate and the film structure of any embodiment, the film structure being disposed on the cutting tool substrate.

[0020] In one embodiment, a method of manufacturing a cutting tool includes the steps of:

[0021] providing a cutting tool substrate;

[0022] forming a preliminary bonding layer on the cutting tool substrate using arc evaporation or magnetron sputtering; wherein the preliminary bonding layer includes one of CrN and TiN.

[0023] forming an intermediate bonding layer on the preliminary bonding layer using arc evaporation or magnetron sputtering; wherein the intermediate bonding layer includes at least one of an oxide film and an oxynitride film.

[0024] forming a nanocrystalline diamond (NCD) film layer on the intermediate bonding layer using microwave chemical deposition. Preferably, the nanocrystalline diamond film layer is a nanopolycrystalline diamond film layer.

[0025] In one embodiment, the method of manufacturing a cutting tool further includes the step of forming a cubic boron nitride film layer on the nanocrystalline diamond film layer using magnetron sputtering or high power pulsed magnetron sputtering; and / or the intermediate bonding layer includes at least one of AlCrON, AlCrO, AlCrSiON, AlCrSiCON, CrSiCON, SiON and SiCON.

[0026] Preferably, for the application scenario of WC-Co cemented carbide as the substrate, to further optimize the bonding basis of the preliminary bonding layer (TiN or CrN) and the substrate, an oxygen plasma glow passivation process is added before forming the preliminary bonding layer. Preferably, the specific operation is as follows: after completing the glow cleaning and ion cleaning of the cutting tool substrate, the temperature in the vacuum furnace cavity is kept not lower than 400 ℃, the vacuum degree is kept not higher than 9×10 -5 mbar, the purity of the oxygen introduced into the cavity is not lower than 99.999%, the furnace cavity pressure is stabilized in the range of 5×10 -3 mbar-8×10 -2 mbar, then the glow power supply is started, the bias voltage is adjusted to 350-500 V, the glow discharge state is maintained for 10-30 minutes, the oxygen and the cobalt element and tungsten carbide phase on the surface of the WC-Co substrate are mildly reacted, and a dense oxide passivation film (mainly composed of WCoOx, WOx, CoOx, x=1-4, etc.) is formed on the surface of the substrate. The passivation film can effectively inhibit the activity of the Co element on the surface of the substrate, avoid subsequent adverse interfacial reaction with the preliminary bonding layer, and the hydroxyl groups on the surface of the passivation film can enhance the chemical bonding ability with the TiN or CrN coating.

[0027] In one of the embodiments, the manufacturing method of the cutting tool further comprises the step of: cleaning the cutting tool substrate by using a plasma method. Preferably, the Ar plasma is used for the glow cleaning treatment. Preferably, the cleaning treatment is performed before forming the preliminary bonding layer.

[0028] In one of the embodiments, for the cutting tool with the substrate of cemented carbide, the oxygen glow passivation treatment is performed on the surface of the cutting tool. Preferably, the oxygen glow passivation treatment is performed after the cleaning treatment and before forming the preliminary bonding layer.

[0029] In one of the embodiments, a manufacturing device of a cutting tool comprises a vacuum furnace, a heating device, a vacuum device, a magnetron sputtering or high-power pulsed magnetron sputtering device, an arc evaporation device, a microwave generating device, a pulsed bias device, a gas flow control device, and a temperature control device.

[0030] The heating device, the vacuum device, the magnetron sputtering or high-power pulsed magnetron sputtering device, the arc evaporation device, the microwave generating device, the pulsed bias device, the gas flow control device, and the temperature control device are at least partially arranged in the cavity of the vacuum furnace.

[0031] The heating device is used for heating the cavity.

[0032] The vacuum device is used for vacuumizing and detecting the vacuum degree of the cavity.

[0033] The target of the high-power pulsed sputtering device, the target of the arc evaporation device and the output end of the microwave generating device are arranged in the inner cavity.

[0034] The pulse bias device is electrically connected with the magnetron sputtering or high-power pulsed magnetron sputtering device, the arc evaporation device and the microwave generating device respectively.

[0035] The gas flow control device is used for inputting gas into the inner cavity.

[0036] The temperature control device is electrically connected with the heating device and is used for controlling the temperature of the inner cavity.

[0037] In one of the embodiments, the arc evaporation device is provided with one or two arc targets for depositing a preliminary bonding layer and an intermediate bonding layer; wherein the preliminary bonding layer comprises one of CrN and TiN, and the intermediate bonding layer comprises at least one of an oxide film and a nitride oxide film.

[0038] The microwave generating device is provided with at least one microwave guide for depositing a nanodiamond film.

[0039] The magnetron sputtering or high-power pulsed magnetron sputtering device is provided with one or two magnetron sputtering or high-power pulsed magnetron sputtering targets for depositing a cubic boron nitride film.

[0040] In one of the embodiments, the inner wall of the vacuum furnace is provided with a cold water pipeline; or,

[0041] The arc evaporation device is provided with an arc pure chromium and pure titanium target, an arc aluminum silicon target, a chromium silicon target or a silicon target; or,

[0042] The high-power pulsed sputtering device is provided with a boron target; or,

[0043] The temperature control device is provided with a furnace temperature control system and a cold water control system.

[0044] In one of the embodiments, the boron target is a pure boron target with a thickness less than or equal to 5 mm.

[0045] In one of the embodiments, the boron target is a doped sputtering boron target, and the doping material is one or more of Be, Mg, Ca, Ti, Cr, Zr, Al, Ga, C, Si and Ge.

[0046] In one of the embodiments, the number of atoms of the doping material is not more than 10% of the number of atoms of the sputtering boron target, and the thickness of the doped sputtering boron target can be greater than 5 mm.

[0047] In one of the embodiments, the boron target is cylindrical, rectangular or circular.

[0048] Compared with the conventional scheme for preparing diamond or cubic boron nitride coated cutters in the prior art, the technical scheme of the present application exhibits significant advantages, which are embodied in the following key aspects:

[0049] In the prior art, for WC-Co cemented carbide and other cutting tool substrates, in order to avoid chemical reaction between Co elements on the surface of the substrate and carbon atoms in nanodiamond at high temperature (forming Fe3C and other substances) and destroy the sp 3 Crystal structure of diamond, it is usually necessary to use chemical solutions (such as Murakami solution, Caro acid, etc.) for etching treatment to remove the surface Co elements. However, such chemical treatment process has obvious defects: on the one hand, the use of chemical solutions will produce a large amount of harmful wastewater, causing serious environmental pollution, and the process is complicated, time-consuming, significantly increasing the production cost and operation complexity; on the other hand, chemical etching will inevitably cause corrosion to the surface of the cemented carbide substrate, forming micro concave or rough structure, resulting in a significant decrease in the surface finish of the subsequently deposited coating, and even an additional polishing process is required to meet the precision requirements of the cutting tool, further reducing the production efficiency. The present application solves the above technical problems by innovative design of the multi-layer composite structure of "preliminary bonding layer-intermediate bonding layer-NCD (-cBN)", which fundamentally solves the above technical problems without relying on the chemical Co removal process to realize the firm bonding of the coating and the substrate and guarantee the coating surface quality. Specifically, the present application uses CrN or TiN as the preliminary bonding layer, which has excellent adhesion with the WC-Co substrate and can effectively isolate the diffusion of Co elements from the substrate to the surface layer; at the same time, AlCrON, AlCrO, AlCrSiON, AlCrSiCON, CrSiCON, SiON or SiCON, etc. Oxide film or nitride-oxide film is used as the intermediate bonding layer, which not only can form a tight chemical bond with the preliminary bonding layer, but also can further block the contact between Co elements and the subsequently deposited NCD coating due to its stable chemical properties, avoiding the destruction of the sp 3The interference of structure formation. By the synergistic isolation effect of the two bonding layers, the application can still make the NCD coating stably nucleate and grow on the substrate surface without the chemical Co removal process, the bonding strength of the NCD coating and the substrate is not weaker than the bonding strength level under the traditional Co removal process, and the coating has no peeling and cracking phenomenon in the cutting test, which meets the cutting demand of difficult-to-machine materials such as high-temperature alloy and high-strength steel. In addition, since the chemical etching step is omitted, the original surface flatness of the WC-Co substrate can be maximally retained (the substrate surface roughness Ra can reach below 0.05 μm), and when each coating is prepared by the arc evaporation method, the microwave chemical deposition method, and the magnetron sputtering or high-power pulsed magnetron sputtering method, the coating will grow uniformly along the smooth surface of the substrate, and the surface roughness Ra of the finally formed composite coating (especially when the outermost layer is NCD or cBN) can be controlled within 0.1 μm, showing excellent mirror gloss. Such high-gloss and high-flatness coating surface not only can reduce the adhesion of chips in the cutting process and reduce the cutting resistance, but also can improve the surface quality of the machined workpiece (the surface roughness of the machined workpiece can be reduced by 20%-30%), while avoiding the surface damage of the substrate caused by chemical etching in the traditional process, prolonging the service life of the cutting tool (compared with the cutting tool prepared by the traditional Co removal process, the service life of the cutting tool of the application can be prolonged by 30%-50%). In summary, the technical scheme of the application replaces the traditional chemical Co removal process through structural innovation, which not only simplifies the production process, reduces the environmental cost and operation difficulty, but also guarantees the bonding performance and surface quality of the coating, and has significant technical advancement and industrial application value in the field of cutting tool manufacturing. BRIEF DESCRIPTION OF DRAWINGS

[0050] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can be obtained by those skilled in the art without creative labor.

[0051] Fig. 1 is a flowchart of an embodiment of the manufacturing method of the cutting tool described in the application.

[0052] Fig. 2 is a flowchart of another embodiment of the manufacturing method of the cutting tool described in the application.

[0053] Fig. 3 is a structural schematic diagram of an embodiment of the manufacturing equipment of the cutting tool described in the application.

[0054] Fig. 4 is another state schematic diagram of the embodiment shown in Fig. 3.

[0055] Fig. 5 is a structural schematic diagram of another embodiment of the manufacturing equipment of the cutting tool described in the application.

[0056] Figure 6 is a schematic diagram of another direction of the embodiment shown in Figure 5.

[0057] Figure 7 is a schematic diagram of another state of the embodiment shown in Figure 6.

[0058] Figure 8 is a perspective view of the embodiment shown in Figure 6.

[0059] Figure 9 is another schematic diagram of the embodiment shown in Figure 5.

[0060] Figure 10 is an exploded view of the embodiment shown in Figure 9.

[0061] Figure 11 is an electron microscope image of an embodiment of the cutting tool described in this application.

[0062] Figure 12 shows the results of the nanohardness tester test in the embodiment shown in Figure 11.

[0063] Figure 13 is an FTIR detection diagram of the embodiment shown in Figure 11.

[0064] Reference numerals: 1. Stainless steel vacuum furnace; 2. Tool holder turntable; 3. Tool holder; 4. Molecular pump and vacuum system; 5. Heating element; 6. Reactive gas inlet pipe; 7. Vacuum furnace door hinge; 8. Furnace door; 9. Arc-shaped rectangular pure chromium / titanium target; 10. Arc-shaped rectangular aluminum-silicon target, chromium-silicon target, or silicon target; 11. Door handle; 12. Sputtered pure boron target or boron-doped target; 13. Microwave extractor; 14. Microwave conduit; 15. Microwave master tube; 16. Microwave generator; 17. Bias pulse power supply; 18. 1. Magnetron sputtering or high-power pulsed magnetron sputtering power supply; 20. Arc pulse power supply for targets 19 and 9; 21. Arc pulse power supply for targets 20 and 10; 22. PLC automated control system; 23. Panel-type industrial control computer; 24. Low-voltage electrical cabinet housing; 25. Penning vacuum gauge; 26. Pinari vacuum gauge; 27. Gearbox; 28. Turntable motor; 29. ​​Internal cavity; 200. Hard alloy; 200. Transition layer; 300. Nano-polycrystalline diamond layer; 400. Cubic boron nitride layer. Detailed Implementation

[0065] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0066] It is to be understood that when an element such as a layer, film or region is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements can also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. It will be understood that, although the terms "first", "second", etc. can be used herein to describe various elements, these elements should not be limited by these terms since such elements are commonly known to have temporal meanings as well. The above-described elements (operations, functionality) can be implemented in digital electronic circuitry, or in computer software, firmware, or hardware, including the

[0067] In addition, the terms "first", "second", etc. are used herein only to describe various elements, and do not imply a relative importance or a specific order of elements. Thus, features defined with "first", "second" can include at least one of the features. In the description of the present application, the meaning of "a plurality" is at least two, for example, two, three, etc., unless otherwise explicitly specified and limited.

[0068] In the present application, unless otherwise explicitly specified and limited, "on", "under", "above", and "over" of a first element to a second element can mean that the first element is in direct contact with the second element, or the first element is in indirect contact with the second element through an intermediate medium. Moreover, "on", "above", and "over" of a first element to a second element can mean that the first element is directly above or obliquely above the second element, or only means that the first element is horizontally higher than the second element. "Under", "below", and "underneath" of a first element to a second element can mean that the first element is directly below or obliquely below the second element, or only means that the first element is horizontally lower than the second element.

[0069] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The use of the terms "and / or" includes a combination of one or more of the associated listed items.

[0070] The application discloses a thin film structure, a cubic boron nitride thin film structure, a cutting tool and a manufacturing method and equipment thereof, and relates to the technical field of cutting tools. The thin film structure, the cubic boron nitride thin film structure, the cutting tool and the manufacturing equipment thereof include part or all of the following technical features. In one embodiment of the application, a thin film structure includes a preliminary bonding layer-intermediate bonding layer-NCD; the preliminary bonding layer includes one of CrN and TiN; and the intermediate bonding layer includes at least one of an oxide film and an oxynitride film. The thin film structure uses the preliminary bonding layer, such as chromium nitride or titanium nitride, to combine with the intermediate bonding layer and then combine with nanometer polycrystalline diamond, so that the cobalt element on the surface of the hard alloy does not affect the thin film formed by the nanometer diamond under the premise of having the hardness of the nanometer diamond, thereby avoiding the process of removing the cobalt element on the surface of the hard alloy by using chemical liquid, and thus having the advantages of simple process and small pollution. The thin film structure, the cutting tool and the manufacturing method and system are described in detail below with reference to Figs. 1-13.

[0071] In one embodiment, a thin film structure includes a preliminary bonding layer-intermediate bonding layer-NCD; that is, the bottom layer is the preliminary bonding layer, the preliminary bonding layer is above the intermediate bonding layer, and the intermediate bonding layer is above the NCD; that is, the thin film structure includes sequentially stacked preliminary bonding layer, intermediate bonding layer and NCD layer, and the preliminary bonding layer is used to bond or adhere to the substrate. The preliminary bonding layer includes one of chromium nitride (CrN) and titanium nitride (TiN), and as an example, the CrN layer is a chromium nitride film, that is, a chromium nitride film layer, and the NCD layer is diamond, that is, a nanometer diamond film, that is, a nanometer diamond film layer. In each embodiment, the intermediate bonding layer includes at least one of an oxide film and an oxynitride film, and the intermediate bonding layer is used to bond the NCD film to the cutting tool substrate. Such a design, in which the oxide film or the oxynitride film is used as the intermediate bonding layer, and the chromium nitride or the titanium nitride is used as the preliminary bonding layer of the intermediate bonding layer of the cutting tool, is advantageous in enhancing adhesion and ensuring isolation, and in combination with the oxide film or the oxynitride film as the intermediate bonding layer of the cutting tool and the polycrystalline diamond, the isolation of the nanometer diamond film and the cutting tool is further ensured, so that the nanometer polycrystalline diamond film or the polycrystalline diamond film can be directly deposited on the nanometer polycrystalline diamond film without using chemical liquid to remove the cobalt element and without soaking the diamond powder, and thus the surface smoothness of the cutting tool after coating is maintained, and the chemical liquid harmful to the environment is reduced.

[0072] In one embodiment, the intermediate bonding layer includes at least one of AlCrON, AlCrO, AlCrSiON, AlCrSiCON, CrSiCON, SiON, and SiCON. As an example, the intermediate bonding layer is AlCrON, AlCrO, or AlCrSiON, and illustratively, the intermediate bonding layer is AlCrSiON, i.e., nitridosilicochromiumaluminum, and the thin film structure includes chromium nitride-nitridosilicochromiumaluminum-nanocrystalline diamond. The remaining embodiments follow in kind and are not repeated. In each embodiment, the thin film structure includes a plurality of thin films and thus can also be referred to as a multi-layer thin film, a multi-layer thin film structure, or a composite thin film layer, among others. Due to the design of the intermediate bonding layer of CrN or TiN, the cobalt element on the surface of the cemented carbide does not affect the thin film formed by the nanocrystalline diamond, so that the surface of the cemented carbide can be combined with the thin film formed by the nanocrystalline diamond through the intermediate bonding layer of CrN or TiN without removing the cobalt element on the surface of the cemented carbide, thereby having the hardness of the nanocrystalline diamond.

[0073] On the basis of the above embodiments, cBN film can be additionally added to the NCD film. Specifically, in one of the embodiments, the film structure further comprises cBN, forming a CrN-intermediate bonding layer-NCD-cBN film. Alternatively, in one of the embodiments, a cubic boron nitride film structure comprises a preliminary bonding layer CrN-intermediate bonding layer-NCD-cBN; wherein the preliminary bonding layer comprises one of CrN and TiN; and the intermediate bonding layer comprises at least one of an oxide film and an oxynitride film. In one of the embodiments, a cubic boron nitride film structure comprises CrN-intermediate bonding layer-NCD-cBN, forming a CrN-intermediate bonding layer-NCD-cBN film; wherein the intermediate bonding layer comprises at least one of an oxide film and an oxynitride film. Thus, according to different product requirements, it can be considered whether to additionally add a cBN film, i.e., a cBN film layer. Generally, the function of the diamond film can only process non-ferrous alloys, such as aluminum, titanium, magnesium alloys, etc. Although diamond is the hardest material, due to its structure composed of carbon elements, the carbon elements of diamond and iron will produce a chemical reaction at high temperature processing, becoming Fe3C, which is equivalent to decomposing diamond, and thus cannot process alloy steel mainly composed of iron. Specifically, the hardness of NCD diamond film is 100 GPa, and the hardness of cBN film is 70 GPa to 80 GPa, which is generally considered to be the top two materials in terms of hardness, and the performance is more superior to the conventional TiN, AlTiN film with a hardness of 40 GPa to 45 GPa. Exemplarily, in terms of hardness, NCD is higher than cBN, and even relatively, NCD hardness is first, and cBN hardness is second, so when processing non-ferrous alloys with cutting tools having the film structure, the film structure comprising CrN-intermediate bonding layer-NCD can be directly used. However, since NCD is composed of carbon atoms, when processing ferrous alloys with cutting tools having the film structure, due to the chemical reaction between carbon and iron at high temperature processing, becoming cementite, i.e., iron carbide Fe3C, alloy steel cannot be processed, and cBN does not have carbon atoms, so cBN replaces NCD as the hardest film that can process alloy steel, for example, can be used for cutting alloy steel; therefore, when processing alloy steel, cutting tools having a cBN film can be selected.

[0074] For the above embodiments with or without cBN, the same equipment can manufacture two kinds of functional films, and the difference between the two kinds of functional films is whether cBN is provided or not, and the main purpose is whether the processed object is a ferrous alloy. As described above, if it is a ferrous alloy, the film structure with cBN is adopted, and if it is a non-ferrous alloy, the film structure without cBN is adopted. The embodiment with cBN is realized based on the NCD film, because the cBN provided on the NCD can obtain stable structural properties. Specifically, in the embodiments of the present application, cBN is deposited on the NCD, and cBN cannot be directly deposited on chromium nitride or the intermediate bonding layer, otherwise it will affect the structural stability of the cBN film of the product.

[0075] In one embodiment, a cutting tool includes the film structure of any embodiment. In one embodiment, a cutting tool includes a cutting tool substrate and a film structure disposed on the cutting tool substrate, wherein the film structure is the film structure of any embodiment. As an example, the film structure is formed on the surface of the cutting tool substrate, such as cemented carbide, to obtain the cutting tool; in specific applications, the cutting tool is a tool, such as a blade, etc., for realizing cutting function, such as machining alloy; as an example, the cutting tool substrate is high speed steel or cemented carbide, etc. As described above, the cutting tool can adopt the film structure without cBN when machining non-ferrous alloy, that is, the outermost layer of the cutting tool and the film structure thereof is NCD layer; the cutting tool can adopt the film structure with cBN when machining ferrous alloy, that is, the outermost layer of the cutting tool and the film structure thereof is cBN layer. Moreover, under the premise of ensuring the hardness of the outer layer of the cutting tool, by designing the chromium nitride with the intermediate bonding layer, the cobalt element on the surface of the cutting tool substrate will not affect the film formed by nanocrystalline diamond, so that it is not necessary to remove the cobalt element on the surface of the cemented carbide, thereby avoiding the process of removing the cobalt element on the surface of the cemented carbide by chemical liquid under the premise of maintaining the smoothness of the tool surface.

[0076] In one embodiment, a method for manufacturing a cutting tool is shown in FIG. 1, which includes the steps of: providing a cutting tool substrate; forming a preliminary bonding layer, such as a chromium nitride film layer, on the cutting tool substrate by arc evaporation method; wherein the preliminary bonding layer includes one of CrN and TiN; that is, the preliminary bonding layer is CrN or TiN; forming an intermediate bonding layer on the chromium nitride film layer by arc evaporation method; wherein the intermediate bonding layer includes at least one of an oxide film and an oxynitride film; forming a nanocrystalline diamond film layer on the intermediate bonding layer by microwave chemical deposition method. As an example, the method for manufacturing a cutting tool is used to prepare the cutting tool of any embodiment and the film structure of any embodiment.

[0077] In one of the embodiments, the method for manufacturing the cutting tool further comprises the step of forming a cubic boron nitride film layer on the nanodiamond film layer by using high power impulse magnetron sputtering. As an example, a method for manufacturing the cutting tool is shown in FIG. 2, which comprises the steps of providing a cutting tool substrate; forming a preliminary bonding layer on the cutting tool substrate by using arc evaporation; wherein the preliminary bonding layer comprises one of CrN and TiN; forming an intermediate bonding layer on the chromium nitride film layer by using arc evaporation; wherein the intermediate bonding layer comprises at least one of an oxide film and an oxynitride film; forming a nanodiamond film layer on the intermediate bonding layer by using microwave chemical deposition; and forming a cubic boron nitride film layer on the nanodiamond film layer by using magnetron sputtering or high power impulse magnetron sputtering. The rest of the embodiments are similar, and are not repeated here. As an example, as a comparison, the traditional deposition method of cubic boron nitride uses ECR electron cyclotron resonance, which produces low-energy plasma and requires a long deposition time, and is only suitable for laboratory environment, but not for industrial use. In this application, high-energy boron-nitrogen plasma suitable for industrial use is produced by using the principle of high power impulse sputtering. Compared with the traditional ECR electron cyclotron resonance method, the plasma density is 10 times different, so under the same deposition conditions, assuming that ECR deposition requires 4 hours, the HiPIMS deposition time of this application only needs 1 hour; this greatly improves the production efficiency of the cutting tool. The above design uses three plasma deposition methods, including arc evaporation method, high power impulse magnetron sputtering method and microwave chemical deposition method. In order to combine chromium nitride and oxide film or oxynitride film, arc plasma method is used; polycrystalline diamond is deposited by microwave chemical vapor deposition, and hot wire method commonly used in industry is not used to avoid high deposition temperature, for example, 1 thousand degrees Celsius, which affects the diamond deposition substrate, for example, the diamond deposition substrate includes high-speed steel, chromium nitride film and intermediate bonding layer.

[0078] In one of the embodiments, the method for manufacturing the cutting tool further comprises the step of forming a cubic boron nitride film layer on the nanodiamond film layer by using high power impulse magnetron sputtering, and the intermediate bonding layer comprises at least one of AlCrON, AlCrO, AlCrSiON, AlCrSiCON, CrSiCON, SiON and SiCON. The rest of the embodiments are similar, and are not repeated here.

[0079] Exemplarily, before forming the chromium nitride film layer on the cutting tool substrate by the arc evaporation method, the manufacturing method of the cutting tool further comprises the step of: pre-starting the vacuum furnace. In one of the embodiments, the manufacturing method of the cutting tool further comprises the step of: cleaning the cutting tool substrate by the plasma method. That is, before forming the film, the cutting tool substrate, i.e. the workpiece to be plated, is cleaned by the plasma method. As an example, after pre-starting the vacuum furnace, the manufacturing method of the cutting tool further comprises the step of: cleaning the cutting tool substrate by the plasma method. Exemplarily, cleaning the cutting tool substrate by the plasma method includes glow cleaning and ion cleaning.

[0080] By using the manufacturing method of the cutting tool, the application further provides a manufacturing device of the cutting tool, which is implemented by using any of the manufacturing methods of the cutting tool. Since any of the manufacturing methods of the cutting tool is used, the manufacturing device of the cutting tool also has the beneficial technical effects of the manufacturing device of the cutting tool, which will not be repeated here.

[0081] In one of the embodiments, a manufacturing device of the cutting tool comprises a vacuum furnace, a heating device, a vacuum device, a magnetron sputtering or high-power pulsed magnetron sputtering device, an arc evaporation device, a microwave generating device, a pulse bias device, a gas flow control device and a temperature control device; the heating device, the vacuum device, the magnetron sputtering or high-power pulsed magnetron sputtering device, the arc evaporation device, the microwave generating device, the pulse bias device, the gas flow control device and the temperature control device are at least partially arranged in the inner cavity of the vacuum furnace; the heating device is used to heat the inner cavity; the vacuum device is used to evacuate the inner cavity and detect the vacuum degree; the target materials of the magnetron sputtering or high-power pulsed magnetron sputtering device, the arc evaporation device and the microwave generating device are arranged in the inner cavity; the pulse bias device is electrically connected with the magnetron sputtering or high-power pulsed magnetron sputtering device, the arc evaporation device and the microwave generating device, respectively; the gas flow control device is used to input gas into the inner cavity; the temperature control device is electrically connected with the heating device and is used to control the temperature of the inner cavity. It should be noted that the vacuum furnace, the heating device, the vacuum device, the magnetron sputtering or high-power pulsed magnetron sputtering device, the arc evaporation device, the microwave generating device, the pulse bias device, the gas flow control device and the temperature control device can be directly purchased from the market or self-made, and the embodiments of the application do not involve specific improvements to these structures.

[0082] In one embodiment, the arc evaporation device is provided with one or two arc targets for depositing chromium nitride film and intermediate bonding layer; wherein the intermediate bonding layer comprises at least one of oxide film and oxynitride film; the microwave generating device is provided with at least one microwave guide for generating plasma by microwave on pure reaction gas, i.e. plasma is generated by microwave on pure reaction gas, for depositing nanodiamond film; the magnetron sputtering or high power pulsed magnetron sputtering is provided with one or two magnetron sputtering or high power pulsed magnetron sputtering targets for depositing cubic boron nitride film.

[0083] As an example, the manufacturing equipment of the cutting tool is provided with four targets, specifically including: one arc target, using arc evaporation source, evaporation material is AlCr, atomic ratio of the two is 70:30; or evaporation material is AlCrSi, atomic ratio of the three is 65:25:5. A group of microwave generators are used for depositing polycrystalline diamond. Another two high power pulsed sputtering targets are used for depositing cubic boron nitride film. For example, target 1 is Cr or Ti, target 2 is AlCr or AlCrSi, target 3 and target 4 are both pure boron. According to one embodiment, the intermediate bonding layer comprises at least one of AlCrON, AlCrO, AlCrSiON, AlCrSiCON, CrSiCON, SiON and SiCON. According to one specific embodiment, the target is a pure Si target or a CrSi target.

[0084] Alternatively, the manufacturing equipment of the cutting tool is provided with five targets, specifically including: two arc targets, using arc evaporation source. A group of microwave generators are used for depositing diamond. Another two magnetron sputtering or high power pulsed magnetron sputtering targets are used for depositing cubic boron nitride film on the bonding layer and diamond layer. For example, target 1 is Cr or Ti, target 2 and target 3 are at least one of AlCr and AlCrSi, target 4 and target 5 are both pure boron. For example, target 2 and target 3 are both AlCr or both AlCrSi.

[0085] In one embodiment, the inner wall of the vacuum furnace is provided with a cold water pipeline; as an example, the vacuum furnace is embedded or protruded with a water pipeline as the cold water pipeline on the inner wall thereof, or the vacuum furnace is provided with a sandwich on the inner wall thereof, taking the sandwich as the cold water pipeline. In one embodiment, the temperature control device is provided with a furnace temperature control system and a cold water control system. As an example, the manufacturing equipment of the cutting tool is provided with a stainless steel vacuum furnace, a high temperature heating tube, a vacuum pumping system and a vacuum detection instrument, a high power pulsed sputtering power supply, an arc power supply, a microwave generator power supply, a pulse bias power supply, a gas flow control system, a furnace temperature control system and a cold water control system, finally achieving the goal of mass production of cubic boron nitride.

[0086] In one of the embodiments, the arc evaporation device is provided with an arc pure chromium pure titanium target and an arc aluminum silicon target; and / or, the magnetron sputtering or high power pulsed magnetron sputtering is provided with a boron target. Preferably, the boron target is a pure boron target with a thickness of less than or equal to 5mm. The pure boron target refers to a boron target with a boron content of greater than or equal to 99.99%. Preferably, the boron target is a doped sputtering boron target, and the doping material is one or more of Be, Mg, Ca, Ti, Cr, Zr, Al, Ga, C, Si, Ge. Preferably, the number of atoms of the doping material is not more than 10% of the number of atoms of the sputtering boron target, and the thickness of the doped sputtering boron target can be greater than 5mm. Preferably, the boron target is cylindrical, rectangular or circular.

[0087] As an example, the arc evaporation device is provided with an arc rectangular pure chromium pure titanium target and an arc rectangular aluminum silicon target; in one of the embodiments, the high power pulsed sputtering device is provided with a cylindrical sputtering pure boron target; as an example, the boron target material is a semiconductor material, which is an insulator at room temperature, and therefore needs to be heated to more than four hundred degrees to have enough active electrons to achieve sputtering. However, when the sputtering reaction occurs, the temperature is lowered to generate enough active electrons, because when the current flows, the current also generates temperature when it moves on the surface of the material, so it is not necessary to use a heating tube to increase its temperature. In addition, the resistivity of pure boron crystal at room temperature is about 1000 ohm·cm to 1000000 ohm·cm, but since boron is a semiconductor material, its resistance value decreases when the temperature rises, and when it exceeds 300 degrees Celsius, it is less than 200 ohm·cm. This resistance value range is sufficient to generate current on the surface of the pure boron. Therefore, the surface temperature of the cylindrical sputtering pure boron target can also be detected by the temperature control device or the circuit control device. As an example, this embodiment uses a cylindrical sputtering pure boron target, which provides a rotating cylindrical sputtering target material in use. The utilization rate of a general rectangular target material is 30%, but the utilization rate of a cylindrical target material is as high as 85%, so it is beneficial to improve the utilization rate of the target material and adapt to the situation that the price of pure boron material is relatively high. In other embodiments, a rectangular sputtering pure boron target or other shapes of sputtering pure boron target can also be used.

[0088] Based on the manufacturing equipment of the cutting tool, in one of the embodiments, the application also provides a manufacturing method of the cutting tool, which is realized based on the manufacturing equipment of the cutting tool of any one of the embodiments, that is, the manufacturing method of the cutting tool uses the manufacturing equipment of the cutting tool of any one of the embodiments. Since the manufacturing equipment of the cutting tool of any one of the embodiments is used, the manufacturing method of the cutting tool also has the beneficial technical effects of the manufacturing equipment of the cutting tool, which will not be repeated here.

[0089] The following examples illustrate the specific implementation of the manufacturing equipment of the cutting tool. In one embodiment, as shown in FIG. 3, the manufacturing equipment of the cutting tool includes a stainless steel vacuum furnace 1 with an inner wall cold water system as the vacuum furnace, and a tool holder turntable 2 and a tool holder 3 are arranged in the stainless steel vacuum furnace 1, the tool holder 3 is arranged on the tool holder turntable 2 and used to fix the tool to be processed as the cutting tool base material; the tool holder 3 rotates with the rotation of the tool holder turntable 2.

[0090] The manufacturing equipment of the cutting tool is also provided with a vacuum furnace door hinge 7, two furnace doors 8 and an opening door handle 11 to realize the opening and closing of the doors in cooperation with the stainless steel vacuum furnace 1.

[0091] In combination with FIGS. 5 and 6, the manufacturing equipment of the cutting tool further includes a molecular pump and vacuum pumping system 4 as the vacuum device, which is located outside the stainless steel vacuum furnace 1 and connected to the stainless steel vacuum furnace 1, and is used to pump the inner cavity 28 of the stainless steel vacuum furnace 1 to vacuum.

[0092] In combination with FIGS. 9 and 10, the manufacturing equipment of the cutting tool further includes four groups of heating pipes 5 as the heating device, which are arranged in the inner cavity 28 of the stainless steel vacuum furnace 1 and used to heat the environment of the inner cavity 28 of the stainless steel vacuum furnace 1.

[0093] The manufacturing equipment of the cutting tool further includes four groups of reaction gas furnace inlet pipes 6 as the gas flow control device, which are connected to the inner cavity 28 of the stainless steel vacuum furnace 1 and used to input gas into the inner cavity 28.

[0094] In combination with FIGS. 7 and 8, the manufacturing equipment of the cutting tool further includes an electric arc rectangular pure chromium / titanium target 9, an electric arc rectangular aluminum silicon target, a chromium silicon target or a silicon target 10 and four sputtering pure boron targets or doped boron targets 12 arranged in the inner cavity 28 of the stainless steel vacuum furnace 1, which are respectively used to form corresponding deposits in the electric arc evaporation method and the high power pulsed magnetron sputtering method. The electric arc rectangular pure chromium / titanium target 9 and the electric arc rectangular aluminum silicon target, chromium silicon target or silicon target 10 are part of the electric arc evaporation device, and the sputtering pure boron target or doped boron target 12 is part of the high power pulsed sputtering device.

[0095] Specifically, the manufacturing equipment of the cutting tool further includes an electric arc evaporation device, which includes the electric arc rectangular pure chromium / titanium target 9 and the electric arc rectangular aluminum silicon target, chromium silicon target or silicon target 10, and further includes a first electric arc pulse power supply 19 and a second electric arc pulse power supply 20 arranged outside the stainless steel vacuum furnace 1, the first electric arc pulse power supply 19 supplies power to the electric arc rectangular pure chromium / titanium target 9, and the second electric arc pulse power supply 20 supplies power to the electric arc rectangular aluminum silicon target, chromium silicon target or silicon target 10.

[0096] The manufacturing equipment of the cutting tool further comprises a microwave generating device, which comprises a microwave outlet 13, a microwave conduit 14, a microwave main conduit 15 and a microwave generator 16 connected in sequence, wherein the microwave outlet 13, the microwave conduit 14 and the microwave main conduit 15 are arranged in the inner cavity 28 of the stainless steel vacuum furnace 1. The microwave outlet 13, the microwave conduit 14, the microwave main conduit 15 and the microwave generator 16 plasmaize the gas.

[0097] The manufacturing equipment of the cutting tool further comprises a pulse bias device, which comprises a pulse bias power supply 17 arranged outside the stainless steel vacuum furnace 1.

[0098] The manufacturing equipment of the cutting tool further comprises a magnetron sputtering or high-power pulse magnetron sputtering device, which comprises two magnetron sputtering or high-power pulse magnetron sputtering power supplies 18 arranged outside the stainless steel vacuum furnace 1.

[0099] The manufacturing equipment of the cutting tool further comprises a PLC automatic control system 21 as the temperature control device, which is arranged outside the stainless steel vacuum furnace 1.

[0100] The manufacturing equipment of the cutting tool further comprises a panel type industrial control computer 22, which is electrically connected with the tool clamp rotating disc 2, the molecular pump and vacuum pumping system 4, the heating tube 5, the microwave generator 16, the pulse bias power supply 17, the magnetron sputtering or high-power pulse magnetron sputtering power supply 18, the first arc pulse power supply 19, the second arc pulse power supply 20 and the PLC automatic control system 21, etc. The panel type industrial control computer 22 serves as a general controller of the manufacturing equipment of the cutting tool, and realizes the specific process control of the manufacturing method of the cutting tool.

[0101] The manufacturing equipment of the cutting tool further comprises a weak current cabinet shell 23, wherein the stainless steel vacuum furnace 1, the microwave generator 16, the pulse bias power supply 17, the magnetron sputtering or high-power pulse magnetron sputtering power supply 18, the first arc pulse power supply 19, the second arc pulse power supply 20 and the PLC automatic control system 21 are arranged in the weak current cabinet shell 23, the molecular pump and vacuum pumping system 4 is arranged outside the weak current cabinet shell 23, the panel type industrial control computer 22 is arranged on the weak current cabinet shell 23, and the furnace door 8 of the stainless steel vacuum furnace 1 is arranged on the weak current cabinet shell 23. The stainless steel vacuum furnace 1 can be directly opened or closed relative to the external environment by opening or closing the furnace door 8, without the need for additional structures to open or close the weak current cabinet shell 23.

[0102] As shown in Fig. 4, the manufacturing equipment of the cutting tool further comprises a vacuum gauge, a gearbox 26 and a rotary table motor 27, both of which are arranged outside the weak current cabinet shell 23, and the rotary table motor 27 is drivingly connected to the gearbox 26, and the output rod of the gearbox 26 penetrates through the weak current cabinet shell 23 and is connected to the tool clamp rotary table 2.

[0103] The vacuum gauge comprises a Penning vacuum gauge 24 and a Pinari vacuum gauge 25, both of which have a part outside the weak current cabinet shell 23 and a part in the inner cavity 28 of the stainless steel vacuum furnace 1.

[0104] The prepared cutting tool is detected by an electron microscope, and the obtained photo is shown in Fig. 11, wherein the cutting tool substrate is cemented carbide 100, which has a relatively uniform transition layer 200, the transition layer 200 is a composite layer of CrN and AlCrSiON; in other embodiments, the transition layer 200 can also be a composite layer of TiN, AlCrON and AlCrO. On the transition layer 200 is a nanocrystalline diamond layer 300, that is, an NCD layer or an NCD film layer, and on the nanocrystalline diamond layer 300 is a cubic boron nitride layer 400, that is, a cBN layer or a cBN film layer.

[0105] The cutting tool described in the above embodiment is detected by nano-hardness, and the obtained results are shown in Fig. 12, which shows the relationship between force and indentation depth. The circled position in the figure shows that plastic deformation occurs at this position. As can be seen from the figure, the pressure increases from 0 to 10 millinewton, and the indentation slowly increases to more than 90 nanometers but less than 100 nanometers. Thus, the nano-hardness value of the cutting tool can be calculated, and the hardness can reach 70 GPa to 80 GPa. Thus, it can be seen that the hardness of the cutting tool and the film structure thereof described in the present application can meet the design requirements.

[0106] The cutting tool described in the above embodiment is detected by Fourier transform infrared absorption spectrum, and the obtained results are shown in Fig. 13, which obviously detects the characteristic wavelength of the cubic boron nitride film structure.

[0107] The specific implementation of the manufacturing equipment and method of the cutting tool will be further illustrated by examples.

[0108] Exemplarily, the conditions for pre-starting the vacuum furnace include:

[0109] Furnace temperature: greater than 400℃; ideal furnace temperature greater than 450℃;

[0110] Vacuum degree: less than 9×10 -5 mbar, ideal vacuum degree less than 5×10 -5 mbar;

[0111] After the above conditions are met, the subsequent processes can be started.

[0112] Exemplarily, the conditions of the glow cleaning include:

[0113] Gas: pure argon Ar, purity not less than 99.999%;

[0114] Furnace cavity pressure range: 8x10 -3 mbar to 5x10 -2 mbar;

[0115] Bias power supply: low voltage 300V to 350V; high voltage 650V to 750V;

[0116] Cleaning time: depending on the number of workpieces and the complexity of the shape, generally, the total time is about half an hour.

[0117] Exemplarily, the conditions of the ion cleaning include:

[0118] Gas: pure argon Ar, purity not less than 99.999%;

[0119] Furnace cavity pressure: 5x10 -3 mbar;

[0120] Bias power supply: high voltage: 600V to 750V;

[0121] Chromium / titanium target: current 100A to 180A, pulse 5Hz to 1000Hz;

[0122] Cleaning time: depending on the number of workpieces and the complexity of the shape, generally, the total time is about 15 minutes;

[0123] Rotating disc speed: 6rpm to 8rpm.

[0124] In this way, the metal ion cleaning function can be realized.

[0125] Under the premise of the above preparation process, the CrN film is used as a basic bonding layer to realize the bonding of the film and the substrate, and the preparation is as follows.

[0126] After ion cleaning, the chromium / titanium target continues to run, at this time, the nitrogen gas with purity not less than 99.999% is opened and the argon gas is closed;

[0127] Nitrogen pressure is in the range of 5x10 -3 mbar to 1x10 -2 mbar; the rotating disc speed is greater than 6rpm as much as possible;

[0128] Bias power supply: 800V to 180V;

[0129] Furnace temperature: greater than 400℃;

[0130] Deposition time depends on the amount of workpiece, generally deposition thickness in the range of about 0.2 microns;

[0131] Rotary table speed: 6 rpm to 8 rpm.

[0132] Under the premise of the above preparation process, the intermediate bonding layer: Cr / Ti+AlSiON layer, or Cr / Ti+AlCON layer, is prepared as follows.

[0133] The chromium / titanium target continues to run, the current is raised to the range of 150 A to 250 A, the current pulse is in the range of 5 Hz to 1000 Hz, and the nitrogen pressure is maintained in the range of 1x10 -2 mbar to 7x10 -2 mbar.

[0134] At this time, the AlSi target is started; wherein, Al:Si is 88:12 to 82:18; for example, Al:Si is 88:12 or 82:18 atomic ratio, depending on the workpiece shape and film requirements, the current is in the range of 150 A to 250 A, and the current pulse is in the range of 5 Hz to 1000 Hz.

[0135] At this time, the flow controller is used to control the oxygen flow, starting from 5 sccm, increasing by 1 sccm per minute, until the pressure ratio of oxygen to nitrogen is O2:N2=40%:60%.

[0136] The transition layer film is formed as an intermediate bonding layer, controlled at about 0.3 microns to 0.5 microns. The bias voltage is controlled in the range of 30 V to 150 V.

[0137] Furnace temperature: greater than 400℃.

[0138] Rotary table speed: 6 rpm to 8 rpm.

[0139] Under the premise of the above preparation process, the polycrystalline nanodiamond layer, i.e. the nanocrystalline diamond film layer, is prepared as follows.

[0140] After completing the intermediate bonding layer, the working state for manufacturing the intermediate bonding layer is maintained, the CH4 gas with a purity of not less than 99.999% is opened, the flow is controlled at 5 sccm to 10 sccm, and is maintained for 5 minutes to 15 minutes.

[0141] Then the arc power, N2 and O2 gas are closed, the H2 gas with a purity of not less than 99.999% and the CO2 gas with a purity of not less than 99.999% are opened, the ratio is maintained at H2:CH4:CO2=(80% to 90%):(5% to 10%):(5% to 10%), and the total gas pressure is maintained at 8x10 -3 mbar to 8x10 -2in the range of 10

[0142] The microwave generator is then started and the output power is adjusted depending on the amount of work pieces and the deposition rate, typically in the range of 500 W to 5 kW or more.

[0143] The bias power supply is in the range of 50 V to 200 V; the furnace temperature is greater than 400°C; the rotation speed is in the range of 6 rpm to 8 rpm.

[0144] The thickness of the polycrystalline nanodiamond layer is in the range of 0.3 μm to 0.5 μm.

[0145] Under the above preparation process, the preparation of the cubic boron nitride layer is described as follows.

[0146] The process of manufacturing the polycrystalline nanodiamond layer is stopped, the furnace temperature is kept greater than 450°C and the cooling system of the pure boron target is stopped for about 5 minutes, which is adjusted according to the surface temperature of the target, and then the vacuum degree is kept at 9 x 10 -5 mbar or less, the N2 is opened until the pressure in the furnace chamber is in the range of 5 x 10 -3 mbar to 8 x 10 -2 mbar, at which time the pure boron target has sufficient temperature to become a conductor.

[0147] The cooling system of the pure boron target is then started, and the bias power supply is adjusted to the range of 400 V to 600 V.

[0148] Then, the argon and nitrogen are opened first, and the pressure in the furnace chamber is in the range of 8 x 10 -3 mbar to 5 x 10 -2 mbar. Then the HiPIMS power supply is started, the argon output is in the range of 5 sccm to 30 sccm, and the argon output reaches the sputtering effect.

[0149] The power supply mode is adjusted to the range of 250 kHz to 350 kHz, the output is an asymmetric square wave, the target voltage is neutralized with a reverse voltage, and the maximum output power is 5 kW.

[0150] The deposition rate is typically adjusted to 1 μm / hour according to the volume of the furnace chamber, the amount of work pieces and the deposition time.

[0151] When the sputtering is generated, the bias voltage is adjusted from the high voltage of 400 V to 600 V to the range of 50 V to 150 V, and the rotation speed is in the range of 6 rpm to 8 rpm.

[0152] When the deposition thickness is reached, all the processes can be stopped, but the vacuum pumping continues until the furnace temperature reaches 150°C.

[0153] At this time, the vacuum pumping system is turned off, the vacuum is broken, and the furnace door is opened to take out the work piece deposited with cubic boron nitride.

[0154] Thus, the cutting tool is completed.

[0155] It should be noted that other embodiments of the present application also include the thin film structure, the cubic boron nitride thin film structure, the cutting tool and the manufacturing method and the apparatus capable of implementing formed by the combination of the technical features in the above embodiments.

[0156] The technical features of the above embodiments can be combined in any manner. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combinations of the technical features do not contradict, they should be considered as the scope of the present application.

[0157] The above embodiments only express several implementation manners of the present application, the description is relatively specific and detailed, however, it should not be understood as the limitation of the patent application scope. It should be noted that for the ordinary skilled in the art, several modifications and improvements can be made without departing from the concept of the present application, which all belong to the protection scope of the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.

Claims

1. A thin film structure, characterized by, comprising a preliminary bonding layer-intermediate bonding layer-NCD; wherein, the preliminary bonding layer comprises one of CrN and TiN; the intermediate bonding layer comprises at least one of an oxide film and an oxynitride film.

2. A cubic boron nitride film structure, characterized by, comprising a preliminary bonding layer-intermediate bonding layer-NCD-cBN; wherein, the preliminary bonding layer comprises one of CrN and TiN; the intermediate bonding layer comprises at least one of an oxide film and an oxynitride film.

3. The film structure according to claim 1 or 2, wherein the intermediate bonding layer comprises at least one of AlCrON, AlCrO, AlCrSiON, AlCrSiCON, CrSiCON, SiON and SiCON.

4. A cutting tool characterized by, comprising a cutting tool substrate and the film structure according to any one of claims 1 to 3, wherein the film structure is arranged on the cutting tool substrate.

5. A method of manufacturing a cutting tool, characterized by, comprising steps of: providing a cutting tool substrate; forming a preliminary bonding layer on the cutting tool substrate by arc evaporation or magnetron sputtering, wherein the preliminary bonding layer comprises one of CrN and TiN; forming an intermediate bonding layer on the preliminary bonding layer by arc evaporation or magnetron sputtering, wherein the intermediate bonding layer comprises at least one of an oxide film and an oxynitride film; forming a nanodiamond film layer on the intermediate bonding layer by microwave chemical deposition.

6. The method of manufacturing a cutting tool according to claim 5, wherein further comprising steps of: forming a cubic boron nitride film layer on the nanodiamond film layer by magnetron sputtering or high power pulsed magnetron sputtering, and / or the intermediate bonding layer comprises at least one of AlCrON, AlCrO, AlCrSiON, AlCrSiCON, CrSiCON, SiON and SiCON.

7. The method of manufacturing a cutting tool according to claim 5, wherein further comprising a step of cleaning the cutting tool substrate by plasma.

8. The method of manufacturing a cutting tool according to claim 5, wherein for a cutting tool with a substrate of cemented carbide, performing oxygen glow passivation treatment on the surface thereof.

9. A manufacturing apparatus of a cutting tool, characterized by, comprising a vacuum furnace, a heating device, a vacuum device, a magnetron sputtering or high power pulsed magnetron sputtering device, an arc evaporation device, a microwave generating device, a pulsed bias device, a gas flow control device and a temperature control device; the heating device, the vacuum device, the magnetron sputtering or high power pulsed magnetron sputtering device, the arc evaporation device, the microwave generating device, the pulsed bias device, the gas flow control device and the temperature control device are at least partially arranged in an inner cavity of the vacuum furnace; the heating device is used for heating the inner cavity; the vacuum device is used for vacuumizing the inner cavity and detecting the vacuum degree; the target of the magnetron sputtering or high power pulsed magnetron sputtering device, the target of the arc evaporation device and the output end of the microwave generating device are arranged in the inner cavity; the pulsed bias device is electrically connected with the magnetron sputtering or high power pulsed magnetron sputtering device, the arc evaporation device and the microwave generating device respectively; the gas flow control device is used for inputting gas into the inner cavity; the temperature control device is electrically connected with the heating device and is used for controlling the temperature of the inner cavity.

10. The apparatus for manufacturing a cutting tool according to claim 9, wherein The electric arc evaporation device is provided with one or two electric arc targets for depositing a preliminary bonding layer and an intermediate bonding layer; wherein the preliminary bonding layer comprises one of CrN and TiN, and the intermediate bonding layer comprises at least one of an oxide film and a nitride oxide film; The microwave generating device is provided with at least one microwave guide for depositing a nanodiamond film; The magnetron sputtering or high-power pulsed magnetron sputtering device is provided with one or two magnetron sputtering or high-power pulsed magnetron sputtering targets for depositing a cubic boron nitride film.

11. The apparatus for manufacturing a cutting tool according to Claim 9, wherein The inner wall of the vacuum furnace is provided with a cold water pipeline; or The electric arc evaporation device is provided with an electric arc pure chromium and pure titanium target, an electric arc aluminum silicon target, a chromium silicon target or a silicon target; or The magnetron sputtering or high-power pulsed magnetron sputtering device is provided with a boron target; or The temperature control device is provided with a furnace temperature control system and a cold water control system.

12. The apparatus for manufacturing a cutting tool according to claim 11, wherein The boron target is a pure boron target with a thickness of less than or equal to 5 mm.

13. The apparatus for manufacturing a cutting tool according to claim 11, wherein The boron target is a doped sputtering boron target, and the doping material is one or more of Be, Mg, Ca, Ti, Cr, Zr, Al, Ga, C, Si and Ge.

14. The apparatus for manufacturing a cutting tool according to claim 13, wherein The number of atoms of the doping material is not more than 10% of the number of atoms of the sputtering boron target, and the thickness of the doped sputtering boron target can be greater than 5 mm.

15. The apparatus according to claim 11, wherein The boron target is cylindrical, rectangular or circular.

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