Plasma processing device

Abstract

The present invention provides a technique for improving efficiency of plasma processing. This plasma processing device comprises: a first chamber; a substrate support disposed in the first chamber, and configured to be movable in a horizontal direction; and a second chamber disposed above the substrate support. The second chamber includes: a gas introduction path configured to supply a gas into the second chamber; a microwave supply port configured to supply microwaves to the gas in the second chamber to generate plasma from the gas; a supply port opened toward the substrate support and configured to supply particles in the plasma in the second chamber to the substrate support in the first chamber; and a conductive mesh member disposed in the second chamber.

Description

Plasma processing apparatus

[0001] The present disclosure relates to a plasma processing apparatus.

[0002] Patent Document 1 discloses a plasma generator that etches a silicon wafer while moving it in the X - Y directions.

[0003] Japanese Patent Laid - Open No. 11 - 067736

[0004] The present disclosure provides a technique for improving the efficiency of plasma processing.

[0005] A plasma processing apparatus in one exemplary embodiment of the present disclosure includes a first chamber, a substrate support portion disposed in the first chamber and configured to be movable in the horizontal direction, and a second chamber disposed above the substrate support portion. The second chamber has a gas introduction path configured to supply gas into the second chamber, a microwave supply port configured to supply microwaves to the gas in the second chamber to generate plasma from the gas, a supply port that opens toward the substrate support portion and is configured to supply particles in the plasma in the second chamber to the substrate support portion in the first chamber, and a conductive mesh member disposed in the second chamber.

[0006] According to the present disclosure, a technique for improving the efficiency of plasma processing can be provided.

[0007] It is a diagram showing an example of a plasma processing system in the first embodiment. It is a diagram for explaining an example of the path R of the plasma supplied to the substrate W. It is a diagram showing an example of a plasma processing apparatus in the second embodiment. It is an enlarged view of the activation part shown in FIG. 3. It is a diagram showing a modified example of the activation part. It is a diagram showing a modified example of the activation part. It is a diagram showing a modified example of the activation part. It is a diagram showing a modified example of the activation part.

[0008] In one exemplary embodiment, a plasma processing apparatus is provided, comprising: a first chamber; a substrate support disposed within the first chamber and configured to be movable horizontally; and a second chamber disposed above the substrate support, wherein the second chamber includes a gas introduction passage configured to supply gas into the second chamber; a microwave supply port configured to supply microwaves to the gas in the second chamber to generate plasma from the gas; a supply port opening toward the substrate support and configured to supply particles in the plasma in the second chamber to the substrate support in the first chamber; and a conductive mesh member disposed within the second chamber. Here, particles in the plasma refer to particles such as radical species or ionic species of a material gas activated by generating plasma.

[0009] In one exemplary embodiment, the mesh member has a mesh size smaller than the supply opening.

[0010] In one exemplary embodiment, a plasma processing apparatus is provided, comprising: a chamber; a substrate support unit disposed within the chamber and configured to be movable horizontally; a plasma generating unit disposed outside the chamber and configured to generate plasma; a nozzle connected to the plasma generating unit and positioned above the substrate support unit in the chamber, configured to guide particles in the plasma to the substrate support unit; and an activation unit configured to activate the particles in the plasma guided out from the nozzle in the tip region of the nozzle.

[0011] In one exemplary embodiment, the activation unit is configured to supply microwaves for plasma generation in the tip region of the nozzle.

[0012] In one exemplary embodiment, the activation unit includes an electrode positioned in the tip region of the nozzle and a power supply configured to supply an RF signal for plasma generation to the electrode to generate plasma in the tip region of the nozzle.

[0013] In one exemplary embodiment, the activation unit includes electrodes positioned around the nozzle and a power supply configured to generate plasma in the nozzle tip region by applying a potential difference for plasma generation between the electrodes and the nozzle.

[0014] In one exemplary embodiment, the activation unit includes a heat-generating element positioned in the tip region of the nozzle and a power supply that supplies power to the heat-generating element, and the activation unit is configured to generate radicals in the tip region of the nozzle using the heat-generating element as a catalyst.

[0015] In one exemplary embodiment, the plasma generation unit is configured to supply particles in the plasma to a nozzle via a particle supply path, and the diameter of the nozzle is smaller than the diameter of the particle supply path.

[0016] Next, exemplary embodiments of the present disclosure will be described with reference to the attached drawings. In each drawing, components denoted by the same reference numerals have the same or similar configurations.

[0017] [First Embodiment] Figure 1 is a diagram illustrating an example of the configuration of a plasma processing system. The plasma processing system PS includes a plasma processing apparatus 1 and a control unit 2.

[0018] The plasma processing apparatus 1 comprises a first chamber 10, a substrate support section 11, and a second chamber 20. The plasma processing apparatus 1 also comprises a gas supply section 31 and a microwave supply section 32.

[0019] As shown in Figure 1, the first chamber 10 comprises a top portion 10a, a side portion 10b, and a bottom portion 10c. The first chamber 10 has a substrate processing space 10s inside. The substrate support portion 11 is positioned within the substrate processing space 10s. The substrate support portion 11 is configured to be movable at least horizontally within the substrate processing space 10s. The substrate support portion 11 comprises a support base 11a and a drive mechanism 11b. The upper surface of the support base 11a constitutes a substrate support surface for supporting the substrate W. A wafer is an example of a substrate W. In one embodiment, the support base 11a may include an electrostatic chuck and a heating mechanism for heating the substrate. The electrostatic chuck includes a ceramic member and an electrostatic chuck electrode disposed within the ceramic member. The drive mechanism 11b is configured to move the support base 11a at least horizontally (left-right direction in Figure 1). In addition to the horizontal direction, the drive mechanism 11b may be configured to move the support base 11a vertically (up-down direction in Figure 1).

[0020] The side portion 10b of the first chamber 10 is provided with a transport port 12 for transporting the substrate W and an exhaust port 13 for exhausting gas from the substrate processing space 10s. The exhaust port 13 may also be provided at the bottom portion 10c of the first chamber 10. The exhaust port 13 is connected to an external exhaust system (not shown) of the first chamber 10. The exhaust system may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the substrate processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0021] The second chamber 20 is positioned above the substrate support portion 11. The second chamber 20 may be positioned so as to be embedded above the first chamber 10. The second chamber 20 comprises a top portion 20a, side portions 20b, and a bottom portion 20c. The top portion 20a of the second chamber 20 is radially inward of the top portion 10a of the first chamber 10 and is positioned substantially coplanar with the top portion 10a. In one embodiment, the top portion 20a of the second chamber 20 may be integrally formed with the top portion 10a of the first chamber 10. The bottom portion 20c of the second chamber 20 is positioned above the substrate support portion 11 and lower than the top portion 10a of the first chamber 10. The same applies to the side portions 20b. The outer walls of the side portions 20b and bottom portion 20c of the second chamber 20 constitute part of the inner wall of the first chamber 10. The substrate processing space 10s is a space defined by the inner walls of the top 10a, side 10b, and bottom 10c of the first chamber 10, and the outer walls of the side 20b and bottom 20c of the second chamber 20.

[0022] The second chamber 20 has a plasma generation space S inside. The plasma generation space S is a space defined by the inner walls of the top 20a, side 20b, and bottom 20c of the second chamber 20. The second chamber 20 includes a gas introduction passage 21, a microwave supply port 22, and a supply port 23.

[0023] The gas introduction passage 21 is configured to introduce the processing gas from the gas supply unit 31 into the plasma generation space S. The gas introduction passage 21 may be configured to introduce the processing gas into the plasma generation space S from the side portion 20b. In this case, the gas introduction passage 21 may be configured to penetrate the interior of the side portion 20b from the top portion 20a of the second chamber 20. In one embodiment, the gas introduction passage 21 may be configured to introduce the processing gas into the plasma generation space S from the top portion 20a. In this case, the gas introduction passage 21 may be configured to penetrate the top portion 20a and reach the plasma generation space S. In other embodiments, there may be multiple gas introduction passages 21.

[0024] The microwave supply port 22 is configured to supply microwaves to the plasma generation space S. The microwave supply port 22 is connected to the microwave supply unit 32. The microwave supply port 22 may be located approximately in the center of the top portion 20a of the second chamber 20.

[0025] The supply port 23 is located at the bottom 20c of the second chamber 20. The supply port 23 penetrates the bottom 20c and opens toward the substrate support portion 11. The supply port 23 may be located approximately in the center of the bottom 20c. The supply port 23 connects the plasma generation space S and the substrate processing space 10s and is configured to supply particles in the plasma generated in the plasma generation space S to the substrate processing space 10s. The diameter of the supply port 23 is smaller than the diameter of the substrate W supported by the substrate support portion 11. The diameter of the supply port 23 may be smaller than the diameter of the microwave supply port 22. The diameter of the supply port 23 is, for example, 3 mm to 15 mm. The particles in the plasma include, for example, radicals, ions, and electrons.

[0026] In one embodiment, a mesh member M covering the supply port 23 may be placed inside the second chamber 20. The mesh member M may be placed above the inner wall of the bottom 20c of the second chamber 20. The mesh member M is conductive and made of, for example, a metallic material. The mesh member M may have a mesh size smaller than the diameter of the supply port 23. The mesh member M can control the amount of plasma particles supplied from the supply port 23 to the first chamber 10. The mesh member M can, for example, suppress the amount of ions and electrons in the plasma supplied to the first chamber 10. In another embodiment, the mesh member M may be placed on the inner wall of the bottom 20c of the second chamber 20.

[0027] The mesh member M is used to trap a portion of ions or electrons in the plasma. The mesh size of the mesh member M can be appropriately selected in the range of 0.7 mm to several mm, depending on the amount of ions or electrons to be trapped. Since ions and electrons are accelerated by the potential difference between the plasma and the substrate, they are incident on the substrate with greater energy than radicals. In other words, by using the mesh member M, it is possible to obtain a particle composition (ratio of radicals, ions, and electrons) with appropriate energy for the process conditions by trapping a portion of the ions or electrons. The mesh size of the mesh member M should be selected according to the desired process conditions, such as the material of the film to be etched and the etching rate. Furthermore, by using the mesh member M, it is possible to reduce the ratio of ions and electrons in the energy particles to a desired level without separating the substrate and the plasma generation space, as in remote plasma.

[0028] The gas supply unit 31 may include at least one gas source and at least one flow controller. In one embodiment, the gas supply unit 31 is configured to supply at least one processing gas to the gas introduction path 21 from a corresponding gas source via a corresponding flow controller. The gas supply unit 31 is located outside the first chamber 10 and the second chamber 20. Each flow controller may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 31 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0029] The microwave supply unit 32 is configured to supply microwaves to the microwave supply port 22. The microwave supply unit 32 is located outside the first chamber 10 and the second chamber 20. The microwave supply unit 32 may be a magnetron or a solid-state power supply. The microwave supply unit 32 has a waveguide (not shown) for supplying the generated microwaves to the microwave supply port 22. The microwave supply unit 32 also has a tuner for adjusting the phase of the microwaves supplied to the waveguide.

[0030] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0031] Next, an example of a plasma processing method using the plasma processing system PS will be described. In the following example, the control unit 2 controls each part of the plasma processing apparatus 1 to perform plasma processing. One example of plasma processing is etching.

[0032] First, as shown in Figure 1, the substrate W is placed in the first chamber 10 of the plasma processing apparatus 1. The substrate W is transported into the first chamber 10 via the transport port 12 and placed on the support base 11a of the substrate support unit 11. The substrate W may be held by suction to the support base 11a, for example, by an electrostatic chuck.

[0033] Next, a processing gas is supplied from the gas supply unit 31 to the plasma generation space S via the gas introduction passage 21. Microwaves are also supplied from the microwave supply unit 32 to the plasma generation space S via the microwave supply port 22. As a result, plasma is generated in the plasma generation space S. The plasma generated in the plasma generation space S is supplied to the substrate processing space 10s via the supply port 23. The plasma may be supplied locally onto a portion of the substrate W located below the supply port 23. As a result, a portion of the substrate W may be locally plasma-treated.

[0034] While plasma is supplied from the supply port 23 to the substrate processing space 10s, the substrate support 11 is moved horizontally. For example, the support base 11a that holds the substrate W is driven horizontally along a given path by the drive mechanism 11b. As a result, the region of the substrate W located below the supply port 23 changes continuously, and each region of the substrate W is sequentially subjected to plasma processing.

[0035] Figure 2 illustrates an example of a plasma path R supplied to the substrate W. The path R may be defined continuously in a so-called single stroke in the horizontal plane. However, the path R may also be defined discontinuously, rather than in a single stroke.

[0036] Furthermore, the drive mechanism 11b may change the drive speed of the support base 11a in the horizontal direction. This allows the plasma processing time in each region of the substrate W to be adjusted. For example, the surface condition (e.g., unevenness) of each region of the substrate W may be detected, and the time in which each region is located below the supply port 23 may be adjusted according to the detected surface condition of each region.

[0037] As described above, the plasma processing apparatus 1 of this embodiment comprises a first chamber 10, a substrate support portion 11 disposed within the first chamber 10 and configured to be movable in the horizontal direction, and a second chamber 20 disposed above the substrate support portion 11. The second chamber 20 includes a gas introduction passage 21 configured to supply gas into the second chamber 20, a microwave supply port 22 configured to supply microwaves to the gas in the second chamber 20 to generate plasma from the gas, a supply port 23 that opens toward the substrate support portion 11 and is configured to supply particles contained in the plasma in the second chamber 20 to the substrate support portion 11 in the first chamber 10, and a conductive mesh member M disposed within the second chamber 20.

[0038] In this embodiment, the second chamber 20 generates plasma near the substrate support portion 11 and supplies particles contained in the plasma toward the substrate support portion 11. This suppresses the amount of radicals and ions that are deactivated before reaching the substrate W on the substrate support portion 11. Furthermore, the mesh member M provides a particle configuration with energy appropriate for the process conditions. As a result, the efficiency of the plasma treatment can be improved (for example, if the plasma treatment is an etching treatment, the etching rate can be improved). In addition, even if the diameter of the supply port 23 is reduced, the radicals and ions necessary for plasma treatment can be supplied to the substrate. Reducing the diameter of the supply port 23 contributes to more localized plasma treatment of each region of the substrate.

[0039] [Second Embodiment] Figure 3 is a diagram showing an example of a plasma processing apparatus in the second embodiment. Figure 4 is an enlarged view of the activation unit shown in Figure 3. The plasma processing apparatus 100 in this embodiment comprises a chamber 210, a plasma generation unit 220, a nozzle 230, and an activation unit 250.

[0040] The chamber 210 comprises a top portion 210a, a side portion 210b, and a bottom portion 210c. The chamber 210 has a substrate processing space 210s inside. The substrate support portion 11 is arranged within the substrate processing space 210s. An opening for attaching a nozzle 230 is provided approximately in the center of the top portion 210a of the chamber 210. A transport port 12 and an exhaust port 13 are provided on the side portion 10b of the chamber 210. The exhaust port 13 may also be provided on the bottom portion 210c of the chamber 210.

[0041] The plasma generation unit 220 is located outside the chamber 210 and is configured to generate plasma. The plasma generation unit 220 is connected to the gas supply unit 31 and is configured to supply a processing gas to a plasma processing space (not shown) provided inside it. The plasma generation unit 220 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR (Electron Cyclotron Resonance) plasma, helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0042] The plasma generation unit 220 is configured to be connected to the nozzle 230. In one embodiment, the plasma generation unit 220 may be configured to supply particles in the plasma to the nozzle 230 via a particle supply passage 240. The particle supply passage 240 may constitute a part of the plasma generation unit 220. The particle supply passage 240 is located outside the chamber 210. The particle supply passage 240 may be, for example, substantially tubular. The particle supply passage 240 receives particles in the plasma generated in the plasma generation unit 220 and guides them to the nozzle 230. In one embodiment, the plasma generation unit 220 may not have a particle supply passage 240 and may be directly connected to the nozzle 230.

[0043] The nozzle 230 is disposed inside the chamber 210. In the example shown in FIG. 3, the upper end of the nozzle 230 is arranged to be fitted into an opening provided in the top portion 210a. The upper end of the nozzle 230 is connected to the plasma generation unit 220 (in the example shown in FIG. 3, the particle supply path 240). The nozzle 230 is arranged such that its lower end (hereinafter also referred to as the "tip") protrudes from the top portion 210a of the chamber 210 toward the substrate support portion 11. The nozzle 230 guides the particles in the plasma supplied via the plasma generation unit 220 (particle supply path 240) to the substrate support portion 11. The nozzle 230 may be substantially tubular. The diameter of the nozzle 230 is smaller than the diameter of the substrate W supported by the substrate support portion 11. In the example shown in FIG. 3, the diameter of the nozzle 230 may be smaller than the diameter of the particle supply path 240.

[0044] The activation unit 250 is configured to activate the particles derived from the nozzle 230 in the vicinity of the inside and / or outside of the tip of the nozzle 230 (hereinafter also referred to as the "tip region").

[0045] In one embodiment, as shown in FIG. 4, the activation unit 250 may be configured to supply microwaves for plasma generation to the tip region of the nozzle 230. The activation unit 250 has a waveguide 251 that supplies the generated microwaves to the tip region. The waveguide 251 may be disposed outside the nozzle 230 in the radial direction. The waveguide 251 includes a portion that protrudes toward the substrate support portion 11 from the tip of the nozzle 230. The particles in the plasma derived from the nozzle 230 are re-excited by the microwaves supplied from the waveguide 251. Thereby, the plasma P1 is generated in the tip region of the nozzle 230. In the plasma P1, the particles in the plasma derived from the nozzle 230 are activated. In one embodiment, the activation includes increasing the amount of radicals in the plasma. In one embodiment, the activation includes increasing the amount of ions and electrons in the plasma.

[0046] As described above, the plasma processing apparatus 100 of this embodiment comprises a chamber 210, a substrate support unit 11 disposed within the chamber 210 and configured to be movable in the horizontal direction, a plasma generation unit 220 disposed outside the chamber 210 and configured to generate plasma, a nozzle 230 connected to the plasma generation unit 220 and disposed above the substrate support unit 11 in the chamber 210, configured to guide particles in the plasma to the substrate support unit 11, and an activation unit 250 configured to activate the particles in the plasma guided out from the nozzle 230 in the tip region of the nozzle 230.

[0047] According to this embodiment, even if particles in the plasma generated by the plasma generation unit 220 become deactivated within the nozzle 230, they can be reactivated by the activation unit 250. This suppresses a decrease in the amount of radicals and ions reaching the substrate W on the substrate support unit 11. As a result, the efficiency of the plasma treatment (e.g., etching rate) is improved. Furthermore, the activation unit 250 allows the supply of radicals and ions necessary for plasma treatment to the substrate even when the nozzle 230 is made smaller in diameter. Reducing the diameter of the nozzle 230 contributes to more localized plasma treatment of each region of the substrate.

[0048] Figures 5 to 7 are diagrams for explaining a modified example of the activation unit 250. In one embodiment, as shown in FIG. 5, the activation unit 250 may include an electrode 252 and a power source 253. The electrode 252 is disposed in the tip region of the nozzle 230. The electrode 252 includes a pair of electrodes 252a and 252b. The electrodes 252a and 252b may be arranged so as to sandwich the nozzle 230. The electrodes 252a and 252b have portions that protrude from the tip region of the nozzle 230 toward the substrate support unit 11. The power source 253 supplies a source RF signal for plasma generation to the electrode 252. In one embodiment, the source RF signal has a frequency within the range of 10 MHz to 150 MHz. Particles in the plasma derived from the nozzle 230 are excited by the source RF signal supplied to the electrode 252. Thereby, plasma P2 is generated in the tip region of the nozzle 230. In the plasma P2, particles in the plasma derived from the nozzle 230 are activated. In one embodiment, activation includes increasing the amount of radicals in the plasma. In one embodiment, activation includes increasing the amount of ions in the plasma.

[0049] In one embodiment, as shown in FIG. 6, the activation unit 250 may include an outer electrode 231, an inner electrode 232, and a power source 254. The outer electrode 231 is disposed radially outside the tip of the nozzle 230. The outer electrode 231 is a substantially tubular body. The inner electrode 232 is configured as a part of the housing of the nozzle 230. The diameter of the outer electrode 231 is larger than the diameter of the inner electrode 232. The power source 254 is configured to apply a potential difference for plasma generation between the outer electrode 231 and the nozzle 230 to generate plasma in the tip region of the nozzle 230. The power source 254 may be configured in the same manner as the power source 253. Particles in the plasma derived from the nozzle 230 are excited by the source RF signal supplied to the electrode 252. Thereby, plasma P3 is generated in the tip region of the nozzle 230. In the plasma P3, particles in the plasma derived from the nozzle 230 are activated. In one embodiment, activation includes increasing the amount of radicals in the plasma. In one embodiment, activation includes increasing the amount of ions in the plasma.

[0050] In one embodiment, the activation unit 250 may be configured to generate radicals in the tip region of the nozzle 230 by a principle similar to catalytic chemical vapor deposition. For example, as shown in Figure 7, the activation unit 250 may have a heating element 255 and a power supply 256. The heating element 255 has two electrodes 255a and a metal wire 255b positioned between the electrodes 255a and in the tip region of the nozzle 230. The metal wire 255b includes, for example, a high-melting-point metal such as tungsten, tantalum, or nickel. The power supply 256 is a DC power supply or an AC power supply. The power supply 256 is configured to supply power to the heating element 255 to heat the metal wire 255b. The metal wire 255b may be heated to, for example, 800 to 2000 degrees. As a result, particles in the plasma discharged from the nozzle 230 are activated by a catalytic reaction with the heated metal wire 255b, increasing the amount of radicals in the plasma.

[0051] Embodiments of this disclosure further include the following embodiments:

[0052] (Note 1) A plasma processing apparatus comprising: a first chamber; a substrate support portion disposed within the first chamber and configured to be movable in the horizontal direction; and a second chamber disposed above the substrate support portion, wherein the second chamber includes: a gas introduction passage configured to supply gas into the second chamber; a microwave supply port configured to supply microwaves to the gas in the second chamber to generate plasma from the gas; a supply port opening toward the substrate support portion and configured to supply particles in the plasma in the second chamber to the substrate support portion in the first chamber; and a conductive mesh member disposed within the second chamber.

[0053] (Note 2) The plasma processing apparatus according to Note 1, wherein the mesh member has a mesh size smaller than the supply port.

[0054] (Note 3) A plasma processing apparatus comprising: a chamber; a substrate support unit disposed within the chamber and configured to be movable in the horizontal direction; a plasma generating unit disposed outside the chamber and configured to generate plasma; a nozzle connected to the plasma generating unit and disposed above the substrate support unit in the chamber, configured to guide particles in the plasma to the substrate support unit; and an activation unit configured to activate particles in the plasma guided out from the nozzle in the tip region of the nozzle.

[0055] (Note 4) The plasma processing apparatus according to Note 3, wherein the activation unit is configured to supply microwaves for plasma generation in the tip region of the nozzle.

[0056] (Note 5) The plasma processing apparatus according to Note 3, wherein the activation unit comprises an electrode positioned in the tip region of the nozzle, and a power supply configured to supply an RF signal for plasma generation to the electrode to generate plasma in the tip region of the nozzle.

[0057] (Note 6) The plasma processing apparatus according to Note 3, wherein the activation unit comprises an electrode arranged around the nozzle and a power supply configured to generate plasma in the tip region of the nozzle by applying a potential difference for plasma generation between the electrode and the nozzle.

[0058] (Note 7) The plasma processing apparatus according to Note 3, wherein the activation unit comprises a heat-generating member disposed in the tip region of the nozzle and a power supply that supplies power to the heat-generating member, and the activation unit is configured to generate radicals in the tip region of the nozzle using the heat-generating member as a catalyst.

[0059] (Note 8) The plasma processing apparatus according to any one of Notes 3 to 7, wherein the plasma generation unit is configured to supply particles in the plasma to the nozzle via a particle supply path, and the diameter of the nozzle is smaller than the diameter of the particle supply path.

[0060] The embodiments described above are for illustrative purposes only and are not intended to limit the scope of this disclosure. The embodiments described above can be modified in various ways without departing from the scope and spirit of this disclosure. For example, some components of one embodiment can be added to other embodiments, or some components of one embodiment can be replaced with corresponding components of other embodiments.

[0061] 1...Plasma processing apparatus, 2...Control unit, 2a...Computer, 2a1...Processing unit, 2a2...Storage unit, 2a3...Communication interface, 10...First chamber, 10a...Top, 10b...Side, 10c...Bottom, 10s...Substrate processing space, 11...Substrate support unit, 11a...Support base, 11b...Drive mechanism, 12...Transport port, 13...Exhaust port, 20...Second chamber, 20a...Top, 20b...Side, 20c...Bottom, 21...Gas introduction path, 22...Microwave supply port, 23...Supply port, 31...Gas supply unit, 32...Microwave supply unit, 100...Plasma processing apparatus ,210...Chamber, 210a...Top, 210b...Side, 210c...Bottom, 210s...Substrate processing space, 220...Plasma generation unit, 230...Nozzle, 231...Outer electrode, 232...Inner electrode, 240...Particle supply path, 250...Activation unit, 251...Waveguide, 252...Electrode, 252a, 252b...Electrode, 253...Power supply, 254...Power supply, 255...Heating element, 255a...Electrode, 255b...Metal wire, 256...Power supply, M...Mesh member, P1, P2, P3...Plasma, PS...Plasma processing system, R...Path, S...Plasma generation space, W...Substrate

Claims

1. A plasma processing apparatus comprising: a first chamber; a substrate support portion disposed within the first chamber and configured to be movable in the horizontal direction; and a second chamber disposed above the substrate support portion, wherein the second chamber includes: a gas introduction passage configured to supply gas into the second chamber; a microwave supply port configured to supply microwaves to the gas in the second chamber to generate plasma from the gas; a supply port opening toward the substrate support portion and configured to supply particles in the plasma in the second chamber to the substrate support portion in the first chamber; and a conductive mesh member disposed within the second chamber.

2. The plasma processing apparatus according to claim 1, wherein the mesh member has a mesh size smaller than the supply port.

3. A plasma processing apparatus comprising: a chamber; a substrate support unit disposed within the chamber and configured to be movable in the horizontal direction; a plasma generating unit disposed outside the chamber and configured to generate plasma; a nozzle connected to the plasma generating unit and disposed above the substrate support unit in the chamber, configured to guide particles in the plasma to the substrate support unit; and an activation unit configured to activate the particles in the plasma guided out from the nozzle in the tip region of the nozzle.

4. The plasma processing apparatus according to claim 3, wherein the activation unit is configured to supply microwaves for plasma generation to the tip region of the nozzle.

5. The plasma processing apparatus according to claim 3, wherein the activation unit comprises an electrode disposed in the tip region of the nozzle, and a power supply configured to supply an RF signal for plasma generation to the electrode to generate plasma in the tip region of the nozzle.

6. The plasma processing apparatus according to claim 3, wherein the activation unit comprises an electrode disposed around the nozzle and a power supply configured to generate plasma in the tip region of the nozzle by applying a potential difference for plasma generation between the electrode and the nozzle.

7. The plasma processing apparatus according to claim 3, wherein the activation unit comprises a heat-generating member disposed in the tip region of the nozzle and a power supply for supplying power to the heat-generating member, and the activation unit is configured to generate radicals in the tip region of the nozzle using the heat-generating member as a catalyst.

8. The plasma processing apparatus according to claim 3, wherein the plasma generation unit is configured to supply particles in the plasma to the nozzle via a particle supply path, and the diameter of the nozzle is smaller than the diameter of the particle supply path.

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