Substrate processing device

Abstract

A substrate processing device according to one aspect of the present disclosure comprises: a substrate holding part that holds and rotates a substrate; a liquid supply part that supplies a processing liquid to the front surface of the substrate held by the substrate holding part; a cup that surrounds the substrate held by the substrate holding part and forms, along the circumferential direction around the rotation axis of the substrate holding part, a flow path for guiding a gas to below the rear surface of the substrate; and a discharge duct that discharges the gas in the cup via a discharge port provided in a partial region in the circumferential direction in the cup. The discharge port is formed such that the flow path is widened as being separated from the substrate held by the substrate holding part.

Description

Substrate processing apparatus

[0001] The present disclosure relates to a substrate processing apparatus.

[0002] Patent Document 1 discloses a substrate processing apparatus including a substrate rotation mechanism, a processing liquid supply mechanism, a cup surrounding the substrate, an exhaust mechanism for exhausting the gas in the cup, an exhaust port provided on the back side of the substrate in the cup, and a flow path for guiding the gas from the front side of the substrate to the back side.

[0003] Japanese Patent Application Laid-Open No. 2015-56626

[0004] The present disclosure provides a substrate processing apparatus capable of efficiently exhausting the gas from the inside of the cup.

[0005] The substrate processing apparatus according to one aspect of the present disclosure includes a substrate holding unit that holds and rotates the substrate, a liquid supply unit that supplies a processing liquid to the surface of the substrate held by the substrate holding unit, a cup that surrounds the substrate held by the substrate holding unit and forms a flow path for guiding the gas to below the back surface of the substrate along the circumferential direction around the rotation axis of the substrate holding unit, and a discharge duct that discharges the gas in the cup through a discharge port provided in a partial region in the circumferential direction in the cup. The discharge port is formed such that the flow path widens as it moves away from the substrate held by the substrate holding unit.

[0006] According to the present disclosure, a substrate processing apparatus capable of efficiently exhausting the gas from the inside of the cup is provided.

[0007] Figure 1 is a schematic plan view showing an example of a wafer processing system. Figure 2 is a schematic side view showing an example of a wafer processing system. Figure 3 is a schematic side view showing an example of a liquid processing apparatus. Figure 4 is a schematic plan view showing an example of a liquid processing apparatus. Figure 5 is a schematic cross-sectional view showing an example of a cup. Figure 6 is a schematic longitudinal cross-sectional view showing an example of a cup. Figure 7 is a schematic bottom view showing an example of a cup. Figure 8 is a schematic perspective view showing an example of a part forming the discharge port of a cup. Figure 9(a) is a schematic side view showing an example of a cup. Figure 9(b) is a schematic cross-sectional view showing an example of a part forming the discharge port of a cup. Figure 10 is a schematic cross-sectional view showing an example of a cup. Figure 11 is a schematic bottom view showing an example of a cup. Figures 12(a) and 12(b) are schematic cross-sectional views showing an example of a part forming the discharge port of a cup. Figure 13 is a schematic diagram showing an example of a liquid processing apparatus. Figure 14(a) is a schematic plan view showing an example of an exhaust section. Figure 14(b) is a schematic side view showing an example of an integrated duct. Figure 15 is a schematic cross-sectional view showing an example of an integrated duct. Figure 16 is a schematic longitudinal cross-sectional view showing an example of a cup. Figure 17 is a schematic cross-sectional view showing an example of an exhaust duct. Figure 18 is a schematic cross-sectional view showing an example of an exhaust duct. Figure 19 is a schematic cross-sectional view showing an example of an exhaust duct. Figure 20 is a schematic cross-sectional view showing an example of an integrated duct. Figure 21(a) is a schematic cross-sectional view showing an example of an integrated duct. Figure 21(b) is a schematic plan view showing an example of an integrated duct. Figure 22 is a schematic cross-sectional view showing an example of an integrated duct. Figure 23 is a schematic cross-sectional view showing an example of an integrated duct. Figure 24 is a schematic cross-sectional view showing an example of an integrated duct. Figure 25 is a schematic cross-sectional view showing an example of an integrated duct. Figure 26 is a schematic cross-sectional view showing an example of a discharge duct. Figure 27 is a schematic cross-sectional view showing an example of a discharge duct.

[0008] Hereinafter, the wafer processing system as a substrate processing apparatus according to this embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0009] <Wafer Processing System> First, the configuration of the wafer processing system according to this embodiment will be described. Figures 1 and 2 are schematic plan view and front view showing the general configuration of the wafer processing system 1, respectively. In this embodiment, the case in which the wafer processing system 1 is a photolithography processing system that performs resist film formation processing and development processing on a wafer W (substrate) will be described as an example.

[0010] As shown in Figure 1, the wafer processing system 1 includes a cassette station 2 for loading and unloading cassettes C containing multiple wafers W, and a processing station 3 equipped with multiple processing devices for performing predetermined processing on the wafers W. The wafer processing system 1 has a configuration in which the cassette station 2, the processing station 3, and an interface station 4 for transferring wafers W between the processing station 3 and an adjacent exposure apparatus (not shown) on the opposite side are integrally connected. Although two processing stations 3 are installed between the cassette station 2 and the interface station 4 as shown in Figure 1, there may be one or three or more processing stations.

[0011] The cassette station 2 is equipped with a plurality of cassette mounting tables 21 and wafer transfer devices 22 and 23. The cassette station 2 transfers wafers W between the cassette C placed on the mounting table 21 and the processing station 3 using the wafer transfer device 22 or 23. For this purpose, the wafer transfer devices 22 and 23 are equipped with drive mechanisms as needed, each having movement paths in various directions such as horizontal (X and Y directions), vertical (Z direction), and around the vertical axis (θ direction), and may also have drive mechanisms having movement paths in all directions. At least one of the wafer transfer devices 22 and 23 is capable of transferring wafers W between the cassette C and the wafer W, and is also capable of transferring wafers to and from the processing station 3. The wafer transfer operation to and from the processing station 3 refers, for example, to transferring wafers W to a third block G3 equipped with a transfer device accessible to the wafer transfer device 33 within the processing station 3, which will be described later. The third block G3 may be equipped with a plurality of transfer devices (not shown) arranged in the vertical direction.

[0012] Furthermore, an inspection device (not shown) for inspecting the wafer W may be provided at a location accessible by either the wafer transport device 22 or 23.

[0013] The processing station 3 is provided with multiple blocks, for example, three blocks G1, G2, and G4, which are the first, second, and fourth blocks. As shown in Figure 2, multiple layers 31, each containing the first and second blocks G1 and G2, are stacked vertically. For example, the first block G1 is provided on the front side of the processing station 3 (the negative X-direction side in Figure 1), and the second block G2 is provided on the rear side of the processing station 3 (the positive X-direction side in Figure 1). A fourth block G4 is provided on the interface station 4 side of the processing station 3 (the positive Y-direction side in Figure 1) or at the connection point with another adjacent processing station 3. The fourth block G4 may be equipped with multiple transfer devices arranged vertically. The aforementioned third block G3 may also be provided within the processing station 3.

[0014] The first block G1 contains multiple processing devices, such as patterning film forming devices and developing devices (both not shown). The patterning film forming devices may include, for example, a resist film forming device as well as an anti-reflective film forming device. For example, multiple processing devices are arranged horizontally. The number, arrangement, and types of these processing devices can be arbitrarily selected.

[0015] These patterning film forming apparatuses and developing apparatuses perform, for example, supplying a predetermined processing liquid or a predetermined gas onto the wafer W. In this way, the patterning film forming apparatuses form resist films used as masks when forming patterns on the lower layer films, or anti-reflective films for efficient light irradiation processes, such as exposure processing. On the other hand, the developing apparatuses remove a portion of the exposed resist film to form the uneven shape that serves as the mask. In one example, the processing station 3 includes a liquid processing unit U1 as a developing apparatus.

[0016] For example, in the second block G2, heat treatment devices (not shown) for performing heat treatment such as heating and cooling of the wafer W are arranged in the vertical and horizontal directions. Also in the second block G2, although not shown, a hydrophobic treatment device for performing hydrophobic treatment to improve the adhesion between the resist solution and the wafer W, and a peripheral exposure device for exposing the outer periphery of the wafer W are arranged in the vertical (Z direction in Figure 2) and horizontal directions. The number and arrangement of these heat treatment devices, hydrophobic treatment devices, and peripheral exposure devices can also be arbitrarily selected.

[0017] As shown in Figure 1, a wafer transport region 32 is formed in the area sandwiched between the first block G1 and the second block G2 in a plan view. A wafer transport device 33, for example, is arranged in the wafer transport region 32.

[0018] The wafer transfer device 33 has a transfer arm that can move, for example, in the Y direction, front-back direction, θ direction, and up-down direction. The wafer transfer device 33 moves within the wafer transfer area 32 and can transfer wafers W to predetermined devices in the surrounding first block G1, second block G2, third block G3, and fourth block G4. If there are multiple processing stations 3 as shown in Figure 1, the wafer transfer device 33 provided at the processing station 3 located on the interface station 4 side can transfer wafers W to predetermined devices in the fifth block G5, which will be described later, in addition to the first, second, and fourth blocks G1, G2, and G4.

[0019] Multiple wafer transfer devices 33 are arranged vertically, for example, as shown in Figure 2. One wafer transfer device 33 can transfer a wafer W to a predetermined device located at the height of multiple upper layers 31 of the stacked layers 31. Another wafer transfer device 33 can transfer the wafer W to a predetermined device located at the height of multiple layers 31 below those layers 31. Multiple wafer transfer areas 32 are provided to enable this type of wafer transfer W. The number of wafer transfer devices 33 and the number of layers 31 corresponding to one wafer transfer device 33 can be arbitrarily selected, such as providing one wafer transfer device 33 for each layer 31.

[0020] Furthermore, a shuttle transport device (not shown) may be provided in the wafer transport area 32 or in the first block G1 or the second block G2. The shuttle transport device transports the wafer W linearly between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0021] Interface station 4 includes a fifth block G5 equipped with multiple transfer devices, and wafer transport devices 41 and 42. Interface station 4 transports wafers W between the fifth block G5, where wafers W are transferred by wafer transport device 33, and the exposure apparatus using wafer transport device 41 or 42. For this purpose, wafer transport devices 41 and 42 are equipped with drive mechanisms as needed, each having movement paths in various directions such as horizontal (X direction, Y direction), vertical (Z direction), and around the vertical axis (θ direction), and may also have drive mechanisms having movement paths in all directions. At least one of wafer transport devices 41 and 42 can support the wafer W and transport it between the transfer devices and the exposure apparatus in the fifth block G5.

[0022] A cleaning device for cleaning the surface of the wafer W, and the aforementioned peripheral exposure device, may be provided within the interface station 4 in a position accessible by either the wafer transport device 41 or 42.

[0023] The inspection device may be provided in the cassette station 2 as described above, but it may also be provided in the processing station 3 and the interface station 4 in a position accessible by any of the transport arms (33, 41, 42 in Figure 1 or Figure 2) located inside each of them.

[0024] The wafer processing system 1 described above is provided with a control device 100. The control device 100 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program that controls the processing of wafers W in the wafer processing system 1. The program storage unit also stores a program that controls the operation of the various processing devices and transport devices and other drive systems to realize wafer processing in the wafer processing system 1. The above program may have been recorded on a storage medium H readable by the computer and installed from the storage medium H to the control device 100. The storage medium H may include ROM, RAM, or a hard disk, but its structure and type are not limited, and it may be temporary or non-temporary. The control device 100 may include a part that stores, reads, and executes the program for realizing wafer processing and performs related communications, and the location of each part may be either inside or outside the wafer processing system 1. The control device 100 may be one or more circuits, and may be provided as a single unit or in separate parts.

[0025] <Operation of the Wafer Processing System> The wafer processing system 1 is configured as described above. Next, an example of wafer processing performed using the wafer processing system 1 configured as described above will be explained.

[0026] First, a cassette C containing multiple wafers W is brought into the cassette station 2 of the wafer processing system 1 and placed on the cassette tray 21. Next, each wafer W in the cassette C is sequentially removed by the wafer transport device 22 or 23 and transported to the transfer device of the third block G3.

[0027] The wafer W, transported to the transfer device of the third block G3, is supported by the wafer transfer device 33 and transported to a hydrophobic treatment device located in the second block G2, where a hydrophobic treatment is performed. Next, the wafer transfer device 33 transports the wafer to a resist film forming device where a resist film is formed on the wafer W. After that, it is transported to a heat treatment device for pre-baking, and then transported to the transfer device of the fifth block G5. Note that if there are multiple processing stations 3 as shown in Figures 1 and 2, the wafer W is first placed in the transfer device of the fourth block G4 before being transported to the transfer device of the fifth block G5, and then transferred between the multiple wafer transfer devices 33. In addition, if necessary, the wafer W may be transported by the wafer transfer device 33 to a peripheral exposure device where the peripheral edge of the wafer is exposed.

[0028] The wafer W, transported to the transfer device of the fifth block G5, is then transported to the exposure device by wafer transport devices 41 and 42 and exposed in a predetermined pattern. The wafer W may be cleaned in a cleaning device before the exposure process.

[0029] The exposed wafer W is transported to the transfer device for the fifth block G5 by wafer transport devices 41 and 42. It is then transported to the heat treatment device 33 for post-exposure baking.

[0030] The wafer W, which has been baked after exposure, is transported by the wafer transport device 33 to a developing device (for example, a liquid processing unit U1) and developed. After development is complete, the wafer W is transported by the wafer transport device 33 to a heat treatment device and undergoes post-bake processing.

[0031] Subsequently, the wafer W is transported by the wafer transport device 33 to the transfer device of the third block G3, and then transported by the wafer transport device 22 or 23 of the cassette station 2 to the cassette C on the predetermined cassette mounting table 21. In this way, the series of photolithography processes is completed.

[0032] It should be noted that the wafer processing system in this disclosure is not limited to the configuration and operation described above. For example, in the above embodiment, the wafer processing system was directly connected to the exposure apparatus and the wafer W was transferred between the interface station 4 and the exposure apparatus, but the wafer processing system does not have to be directly connected to the exposure apparatus. In that case, for example, the wafer W is transported from the cassette station 2 to the processing station 3, the necessary processing is performed, and then it is transported back to the cassette station 2 for removal outside the system. Also, among the processing devices listed, those that are not necessary may not be provided in the wafer processing system, or processing may not be performed in those devices.

[0033] <Liquid Processing Unit> Next, the details of the liquid processing unit U1 will be explained with reference to Figures 3 to 9. For the sake of explanation, as with Figures 1 and 2, a Cartesian coordinate system defined by the X, Y, and Z axes is shown in Figures 3 to 9. The Z axis represents the vertical direction, and the X and Y axes represent the mutually orthogonal horizontal directions.

[0034] As shown in Figure 3, the liquid processing unit U1 includes a substrate holding section 52, a developer supply section 54 (liquid supply section), a rinse solution supply section 56 (liquid supply section), a cup 60, and an exhaust section 80.

[0035] (Substrate holding section) The substrate holding section 52 is the part that holds and rotates the wafer W. The substrate holding section 52 holds the wafer W horizontally and rotates the wafer W around a vertical rotation axis Ax. The substrate holding section 52 includes a rotation drive section 52a, a shaft 52b, and a holding section 52c.

[0036] The rotary drive unit 52a operates based on an operation signal from the control device 100 and rotates the shaft 52b. The rotary drive unit 52a includes a power source, such as an electric motor. The holding unit 52c is provided at the tip of the shaft 52b. The wafer W is placed on the upper surface of the holding unit 52c. Hereinafter, of the pair of main surfaces of the wafer W placed on the holding unit 52c, the main surface facing upward will be referred to as the "front surface Wa," and the main surface facing downward will be referred to as the "back surface Wb."

[0037] The holding portion 52c holds the back surface Wb of the wafer W by suction, for example. The holding portion 52c holds the wafer W such that the rotation axis Ax, which represents the rotation center by the rotation drive portion 52a (substrate holding portion 52), substantially coincides with the center of the surface Wa of the wafer W. The peripheral edge Wc of the wafer W held by the holding portion 52c extends in the circumferential direction around the rotation axis Ax (the direction along the circumference of a circle centered on the rotation axis Ax).

[0038] (Developer supply unit) The developer supply unit 54 is the part that supplies developer (processing solution) to the surface Wa of the wafer W held by the substrate holding unit 52. As shown in Figures 3 and 4, the developer supply unit 54 includes a supply source 54a, a supply pipe 54b, a developer nozzle 54c, a movable body 54d, and an arm 54e.

[0039] The supply source 54a is a source of developer. The supply source 54a includes, for example, a developer storage tank, a pump, and a valve. The developer nozzle 54c is connected to the supply source 54a via a supply pipe 54b. The developer nozzle 54c discharges the developer supplied from the supply source 54a. The movable body 54d is connected to the developer nozzle 54c via an arm 54e. The movable body 54d moves along a guide rail 53 provided around the substrate holder 52, thereby moving the developer nozzle 54c horizontally.

[0040] When supplying developer to the surface Wa of the wafer W, the developer nozzle 54c is moved by the moving body 54d and positioned above the wafer W held by the holding part 52c. Then, the developer is discharged downward from the developer nozzle 54c, supplying the developer to the surface Wa of the wafer W.

[0041] (Rinsing liquid supply unit) The rinsing liquid supply unit 56 is the part that supplies rinsing liquid (processing liquid) to the surface Wa of the wafer W held by the substrate holding unit 52. The rinsing liquid is, for example, pure water or DIW (Deionized Water). The rinsing liquid supply unit 56 includes a supply source 56a, a supply pipe 56b, a rinsing liquid nozzle 56c, a movable body 56d, and an arm 56e.

[0042] The supply source 56a is a supply source of the rinse liquid. The supply source 56a includes, for example, a storage tank of the rinse liquid, a pump, and a valve. The rinse liquid nozzle 56c is connected to the supply source 56a via the supply pipe 56b. The rinse liquid nozzle 56c discharges the rinse liquid supplied from the supply source 56a. The moving body 56d is connected to the rinse liquid nozzle 56c via the arm 56e. The moving body 56d moves along the guide rail 53 to move the rinse liquid nozzle 56c horizontally.

[0043] When supplying the rinse liquid to the surface Wa of the wafer W, the rinse liquid nozzle 56c is moved by the moving body 56d and is disposed above the wafer W held by the holding portion 52c. Then, the rinse liquid is discharged downward from the rinse liquid nozzle 56c, whereby the rinse liquid is supplied to the surface Wa of the wafer W.

[0044] The cup 60 is a member that is disposed so as to surround the wafer W held by the substrate holding portion 52 and accommodates the wafer W. The cup 60 surrounds the holding portion 52c of the substrate holding portion 52. In the following description of each part of the cup 60, the wafer W in the state held by the substrate holding portion 52 (holding portion 52c) is simply referred to as "wafer W", and the circumferential direction around the rotation axis Ax of the substrate holding portion 52 is referred to as "circumferential direction R".

[0045] (Cup) The cup 60 forms a flow path for guiding gas along the circumferential direction R to below the back surface Wb of the wafer W. The flow path formed by the cup 60 guides gas from a space above the wafer W (hereinafter, sometimes referred to as the "surface Wa side") to a space below the wafer W (hereinafter, sometimes referred to as the "back surface Wb side"). Details of the flow path formed by the cup 60 will be described later.

[0046] FIG. 5 shows a cross section taken along line V-V of FIG. 3. As shown in FIGS. 3 and 5, the cup 60 includes a bottom portion 61, an outer wall 62, an inner wall 63, and an annular wall 64.

[0047] The bottom 61 is a portion facing the back surface Wb of the wafer W. The bottom 61 is formed in an annular shape so as to extend along the circumferential direction R. The bottom 61 may be formed in a plate shape so as to extend in a direction orthogonal to the rotation axis Ax (X-axis direction and Y-axis direction). In a plan view (viewed from directly above), a part of the wafer W overlaps with the bottom 61. In a plan view, the outer edge of the bottom 61 is located outside the peripheral edge Wc of the wafer W, and the inner edge of the bottom 61 is located inside the peripheral edge Wc of the wafer W. In the present disclosure, the direction (orientation) toward the rotation axis Ax is referred to as "in" or "inner side", and the direction (orientation) away from the rotation axis Ax is referred to as "out" or "outer side".

[0048] The outer wall 62 is a portion protruding upward from the outer edge on the upper surface of the bottom 61. At least a part of the outer wall 62 may protrude vertically upward from the outer edge of the upper surface of the bottom 61. The outer wall 62 is formed in a cylindrical shape along the circumferential direction R. All parts of the outer wall 62 are located outside the peripheral edge Wc of the wafer W. The upper end of the outer wall 62 is open, constituting an air inlet 62a to the space inside the cup 60. An inclined wall portion 62b inclined inward is formed in a portion of the outer wall 62 close to the upper end constituting the air inlet 62a. The upper end of the outer wall 62 is located above the surface Wa of the wafer W.

[0049] In FIG. 3, a portion other than the inclined wall portion 62b of the outer wall 62 and extending vertically upward is labeled "62c". As shown in FIG. 3, the portion 62c and the inclined wall portion 62b may be integrally formed. Different from the example shown in FIG. 3, the portion 62c extending vertically upward and the inclined wall portion 62b may be formed separately and then assembled to each other by fitting or the like.

[0050] The inner wall 63 (second annular wall) is a portion protruding upward from the inner edge on the upper surface of the bottom 61. The inner wall 63 may protrude vertically upward from the inner edge of the upper surface of the bottom 61. The inner wall 63 is formed in a cylindrical shape along the circumferential direction R. All parts of the inner wall 63 are located inside the peripheral edge Wc of the wafer W. The upper end 63a of the inner wall 63 is located below the back surface Wb of the wafer W.

[0051] The annular wall 64 (first annular wall) is a portion that protrudes upward from the upper surface of the bottom 61, between the inner wall 63 and the outer wall 62. The inner wall 63 is located inside the annular wall 64. The outer wall 62 is located outside the inner wall 63 and the annular wall 64. The annular wall 64 may protrude vertically upward from the upper surface of the bottom 61. The annular wall 64 is formed in a cylindrical shape along the circumferential direction R. The upper end of the annular wall 64 is located below the back surface Wb of the wafer W. The upper end of the annular wall 64 is located below the upper end 63a of the inner wall 63.

[0052] The annular wall 64 and the inner wall 63 are formed such that they are spaced uniformly apart in the circumferential direction R. The spacing between the annular wall 64 and the inner wall 63 is defined by the distance between them in the radial direction of a circle centered on the axis of rotation Ax. Being spaced uniformly apart in the circumferential direction R means that the spacing between them remains constant even when the position (the observation position of interest) in the circumferential direction R changes.

[0053] In the longitudinal section (see Figure 3) obtained by cutting through an arbitrary plane containing the axis of rotation Ax, the distance between the inner wall 63 and the annular wall 64 is smaller than the distance between the annular wall 64 and the outer wall 62. The distance between the inner wall 63 and the annular wall 64 in the above longitudinal section is defined by the shortest distance between the inner wall 63 and the annular wall 64. The distance between the annular wall 64 and the outer wall 62 in the above longitudinal section is defined by the shortest distance between the annular wall 64 and the outer wall 62.

[0054] The cup 60 includes a lid member 66. The lid member 66 is provided near the upper end 63a of the inner wall 63. The lid member 66 may be formed in the shape of a disc. The shaft 52b of the substrate holder 52 passes through the lid member 66. The inner space surrounded by the inner wall 63 is closed off by the lid member 66.

[0055] The cup 60 includes an umbrella-shaped portion 72 and an annular wall 73. The umbrella-shaped portion 72 is located between the annular wall 64 (bottom portion 61) and the back surface Wb of the wafer W. The umbrella-shaped portion 72 is formed in an annular shape along the circumferential direction R. The vicinity of the inner edge of the umbrella-shaped portion 72 is connected to the upper end 63a of the inner wall 63, and the umbrella-shaped portion 72 protrudes outward from the annular wall 64.

[0056] The annular wall 73 (third annular wall) protrudes downward from the outer edge of the lower surface of the umbrella-shaped portion 72. The annular wall 73 extends intersecting the bottom portion 61 and is positioned with a gap between it and the bottom portion 61. The annular wall 73 may also protrude vertically downward from the outer edge of the lower surface of the umbrella-shaped portion 72. The annular wall 73 is formed in a cylindrical shape along the circumferential direction R. The annular wall 73 is located between the annular wall 64 and the outer wall 62. In the above longitudinal section, the inner wall 63, annular wall 64, annular wall 73, and outer wall 62 (part 62c) are arranged in this order from the inside.

[0057] After being supplied to the surface Wa of the wafer W, the developer or rinse solution that falls from the surface Wa of the wafer W is guided by the upper surface of the umbrella-shaped portion 72 and the annular wall 73 to a region outside the annular wall 64. This outer region is formed by the bottom portion 61, the annular wall 64, and portion 62c of the outer wall 62. As described above, the cup 60 has the function of receiving the processing solution after it has been supplied to the surface Wa of the wafer W. The cup 60 is configured to collect the processing solution that splashes outwards from the peripheral edge Wc (outer edge) of the wafer W when it is rotated by the substrate holding portion 52.

[0058] A drain port 68 is provided at the bottom 61 (see Figure 5). The drain port 68 is an opening for discharging the processing liquid collected by the cup 60 to the outside of the cup 60. A drain section is connected to the drain port 68 to guide the processing liquid (drainage) collected in the cup 60 to the outside of the wafer processing system 1.

[0059] An air intake port 62a is formed at the upper end of the space inside the cup 60, and gas from outside the cup 60 enters through the air intake port 62a. The gas that enters through the air intake port 62a is guided from the surface Wa side to the back surface Wb side by the flow path FP formed by the umbrella-shaped portion 72, the annular wall 73, the outer wall 62, the bottom portion 61, the annular wall 64, and the inner wall 63.

[0060] Figure 6 shows an enlarged view of a portion of the longitudinal section of Figure 3. When observing the longitudinal section, the width may widen as one moves downstream in the section of the flow path FP after passing the umbrella-shaped section 72. Here, the following parameters d1, d2, d3, d4, and d5 are defined as parameters representing the spacing between members in the longitudinal section: ・d1: Shortest distance between the outer wall 62 (part 62c of the outer wall 62) and the annular wall 73 ・d2: Shortest distance between the annular wall 73 and the bottom 61 ・d3: Shortest distance between the annular wall 73 and the annular wall 64 ・d4: Shortest distance between the annular wall 64 and the umbrella-shaped section 72 ・d5: Shortest distance between the annular wall 64 and the inner wall 63

[0061] The spacing d2 (the spacing between the annular wall 73 and the bottom 61) may be greater than the spacing d1 (the spacing between the annular wall 73 and the outer wall 62). The spacing d3 (the spacing between the annular wall 64 and the annular wall 73) may be greater than the spacing d2. The minimum spacing between members downstream of the flow path between the annular wall 73 and the annular wall 64 may be greater than the spacing d2 and also greater than the spacing d1. That is, the smallest spacing among spacings d3, d4, and d5 may be greater than both the spacing d1 and the spacing d2.

[0062] Returning to Figures 3 and 5, the cup 60 is provided with an outlet 69. The outlet 69 is a space (three-dimensional space) for discharging gas, which has been guided from the surface Wa side to the back Wb side by the flow path FP, to the outside of the cup 60. An exhaust unit 80 that guides the gas inside the cup 60 to the outside of the wafer processing system 1 is connected to the outlet 69 (see also Figure 4). The gas that enters the cup 60 passes through the flow path FP and the outlet 69 in order and is guided to the exhaust unit 80. The outlet 69 is in communication with the flow path FP and is in communication with the flow path inside the exhaust unit 80. The outlet 69 can also be called the discharge space.

[0063] The outlet 69 is provided in a portion of the circumferential R region (a portion of the area) within the cup 60. Therefore, the gas guided by the flow path FP from the surface Wa side to the back surface Wb side (to the flow path between the inner wall 63 and the annular wall 64) is collected in the circumferential R region up to the position where the outlet 69 is provided. The cup 60 may be provided with two outlets 69. The two outlets 69 are arranged, for example, so as to sandwich the axis of rotation Ax in a plan view.

[0064] The discharge port 69 is formed such that the flow path widens as it moves away from the wafer W. That is, the cross-sectional area of ​​the flow path of the discharge port 69 is larger on the downstream side than on the upstream side. In this disclosure, the terms "upstream" and "downstream" are used with reference to the flow of the discharged gas. That is, the gas flows and is discharged from upstream to downstream. When the flow path widens as it moves away from the wafer W, the flow path (flow path cross-sectional area) may gradually increase as it moves downstream, or it may increase in steps, or there may be a mixture of parts that gradually increase and parts that increase in steps.

[0065] When observing a cross-section perpendicular to the axis of rotation Ax and passing through the annular wall 64 and the inner wall 63 from above (as shown in Figure 5), a through-hole H1 is provided between the annular wall 64 and the inner wall 63. There is no bottom portion 61 in the area where the through-hole H1 is provided. The through-hole H1 is formed by a part of the discharge port 69.

[0066] As shown in Figures 3, 7, 8, and 9(a), the cup 60 includes annular feet 78 (for example, two feet 78). Figure 8 shows a perspective view when cut at a position that includes the axis of rotation Ax and passes through the outlet 69. In Figures 8 and 9(a), the inclined wall portion 62b of the outer wall 62 is omitted. The feet 78 protrude downward from the lower surface of the bottom 61. The feet 78 may also protrude vertically downward from the lower surface of the bottom 61. The feet 78 form a portion of the outlet 69 where the flow path widens on the downstream side.

[0067] The area at one downstream end of the discharge port 69 (flow channel cross-sectional area) is larger than the through hole H1 described above. The area at one downstream end of the discharge port 69 corresponds to the area of ​​the two-dimensional opening 78a formed by the lower end of the foot portion 78. The portion of the discharge port 69 where the flow channel widens on the downstream side (the space enclosed by the foot portion 78) may widen so as to protrude outwards. Widening so as to protrude outwards means that the portion where the flow channel is widened is located further out than the portion where the flow channel is not widened.

[0068] As shown in Figures 5 and 8, the bottom portion 61 includes an inclined surface 61a. The inclined surface 61a defines the edge of the through-hole H1 when the cross-section is observed from above, and forms the flow of gas to the portion of the outlet 69 where the flow path widens on the downstream side (the space surrounded by the foot portion 78). The inclined surface 61a is connected to the upper surface of the horizontal portion of the bottom portion 61 and is a surface that extends diagonally downward from the connection point with the horizontal portion. Two inclined surfaces 61a are provided for each outlet 69. When observed along the circumferential direction R, one inclined surface 61a, the through-hole H1, and the other inclined surface 61a are arranged in this order in a continuous sequence.

[0069] Figure 9(b) schematically shows a cross-section when the material is cut at the position of the B-B line, which is represented by the dashed line in Figure 5. The gas guided by the flow path FP to the space between the inner wall 63 and the annular wall 64 flows toward the outlet 69 in the circumferential direction R. At least a portion of the gas flowing toward the outlet 69 in the circumferential direction R is guided by the inclined surface 61a to the portion of the outlet 69 that is located below the horizontal portion of the bottom 61 and where the flow path is enlarged (the space surrounded by the foot portion 78). The inclined surface 61a may be formed to extend to the portion of the outlet 69 where the flow path is enlarged. In other words, in the Z-axis direction, the lower end of the inclined surface 61a may be located at the same position as at least a portion of the portion of the outlet 69 where the flow path is enlarged.

[0070] As described in Patent Document 1 above, it is conceivable to provide a through-hole in the bottom of the cup, which is entirely horizontal, and to connect an exhaust mechanism (exhaust duct) to the bottom that forms a flow path communicating with the through-hole. In this case, the outlet for discharging the gas inside the cup is composed only of the through-hole in the bottom, and the flow path of the outlet does not expand (remains constant) as it moves away from the wafer W. Since the outlet is provided only in a part of the circumferential direction, gas flowing in one rotational direction and gas flowing in the other rotational direction in the circumferential direction merge at the outlet. At this time, due to the narrowness of the outlet, the gases flowing in different rotational directions collide with each other, and the degree to which vortices are generated increases. As a result, pressure fluctuations occur, leading to increased pressure loss.

[0071] In contrast, in the cup 60 described above, below the bottom 61 (the horizontal portion of the bottom 61), the portion where the flow path is widened by the foot portion 78 is formed as part of the outlet 69. An inclined surface 61a is provided to form the flow of gas toward this widened portion of the flow path. This reduces the degree to which vortices are generated at the outlet 69 due to collisions between gases flowing in different rotational directions. As a result, the pressure loss caused by the merging of gases at the outlet 69 can be reduced.

[0072] In the cup 60 illustrated in Figures 3 to 9, the outlet 69 can be considered as being divided into two outlet spaces. One outlet space (hereinafter referred to as "first outlet space V1"; see Figure 6) is located between the upper and lower surfaces of the horizontal portion of the bottom 61 in the Z-axis direction and is a space where the bottom 61 does not exist, including the portion where an inclined surface 61a is formed. The other outlet space (hereinafter referred to as "second outlet space V2") is located below the lower surface of the horizontal portion of the bottom 61 in the Z-axis direction and is a space enclosed by the foot portion 78. When the flow path cross-sectional area of ​​the outlet 69 (first and second outlet spaces V1 and V2) is defined as the cross-sectional area in a plane perpendicular to the rotation axis Ax, the flow path cross-sectional area of ​​the second outlet space V2 is larger than the flow path cross-sectional area of ​​the first outlet space V1 at any position in the Z-axis direction. The flow path cross-sectional area of ​​the first outlet space V1 may coincide with the area of ​​the through hole H1 when the above cross-section is observed from above.

[0073] In a plan view, at least a portion of the first discharge space V1 overlaps with the second discharge space V2. In a plan view, the portion of the second discharge space V2 that does not overlap with the first discharge space V1 is located outside the portion of the second discharge space V2 that overlaps with the first discharge space V1. That is, the second discharge space V2 is formed to protrude outward from the first discharge space V1. In the longitudinal section of Figure 3 or Figure 6, the width of the second discharge space V2 may be greater than the distance between the inner wall 63 and the annular wall 73, or it may be about the same as the distance between the inner wall 63 and the outer wall 62 (for example, 0.9 to 1.1 times).

[0074] Figures 10, 11, and 12(a) schematically show an example of a cup 60 equipped with a member to avoid collisions between gases flowing in different rotational directions. The diagrams shown in Figures 10, 11, and 12(a) correspond to the diagrams shown in Figures 5, 7, and 9(b), respectively. As shown in Figures 10, 11, and 12(a), the cup 60 includes a partition 75. The partition 75 is provided so as to divide the through-hole H1 (more specifically, the through-hole H1 assuming there is no partition 75) into two regions aligned along the circumferential direction R when the cross-section is observed from above. The partition 75 may extend radially in the circumferential direction around the rotation axis Ax in the cross-section. The partition 75 may be connected to the inner wall 63 and the annular wall 64, respectively.

[0075] As shown in Figure 12(b), the cup 60 may have a partition 76 composed of two curved members instead of the partition 75. By providing the partition 75 or partition 76, collisions can be avoided when gases flowing in different rotational directions merge at the outlet 69. As a result, the gas can be guided to the second discharge space V2 with the generation of vortices further suppressed.

[0076] In the example described above, the annular wall 64 is formed continuously along the circumferential direction R, but the annular wall 64 may be interrupted in a part of the circumferential direction R. In this case, each of the interrupted ends of the annular wall 64 may be connected to the inner wall 63 via a connecting wall.

[0077] (Exhaust Section) Next, an example of the exhaust section 80 will be described in detail with reference to Figures 13 to 15. In describing the exhaust section 80 in detail, the parts of the liquid processing unit U1 other than the exhaust section 80 will also be described. The liquid processing unit U1 may have one housing 51 and two sets of substrate holders 52 and cups 60. Hereinafter, for the sake of convenience in the explanation, one cup 60 will be referred to as "cup 60A" and the other cup 60 as "cup 60B" to distinguish between the two cups 60. Inside the housing 51 are cup 60A, a substrate holder 52 corresponding to cup 60A, cup 60B (second cup), and a substrate holder 52 (second substrate holder) corresponding to cup 60B.

[0078] Inside the housing 51, cups 60A and 60B are positioned at different locations and aligned along a horizontal direction. Hereinafter, "direction D1" will be the direction in which the line segment connecting the rotation axis Ax of the substrate holder 52 corresponding to cup 60A and the rotation axis Ax of the substrate holder 52 corresponding to cup 60B extends along the shortest distance. Cups 60A and 60B are aligned along direction D1.

[0079] The developer supply unit 54 is capable of supplying developer to both the wafer W held in the substrate holding unit 52 corresponding to cup 60A and the wafer W (another wafer W) held in the substrate holding unit 52 corresponding to cup 60B. When supplying developer to the wafer W held in the substrate holding unit 52 corresponding to cup 60A, the developer nozzle 54c moves above that wafer W. When supplying developer to the wafer W held in the substrate holding unit 52 corresponding to cup 60B, the developer nozzle 54c moves above that wafer W.

[0080] The rinse liquid supply unit 56 is capable of supplying rinse liquid to both the wafer W held in the substrate holding unit 52 corresponding to cup 60A and the wafer W (another wafer W) held in the substrate holding unit 52 corresponding to cup 60B. When supplying rinse liquid to the wafer W held in the substrate holding unit 52 corresponding to cup 60A, the rinse liquid nozzle 56c moves above that wafer W. When supplying rinse liquid to the wafer W held in the substrate holding unit 52 corresponding to cup 60B, the rinse liquid nozzle 56c moves above that wafer W.

[0081] The exhaust section 80 includes an exhaust duct 82 corresponding to cup 60A (hereinafter referred to as "exhaust duct 82A"), an exhaust duct 82 corresponding to cup 60B (hereinafter referred to as "exhaust duct 82B"), and an integrated duct 84. Exhaust duct 82A is a duct that discharges the gas inside cup 60A through the outlet 69 of cup 60A. Exhaust duct 82B (second exhaust duct) is a duct that discharges the gas inside cup 60B through the outlet 69 of cup 60B.

[0082] The discharge duct 82A forms two flow paths communicating with the two outlets 69 of the cup 60A and merges these flow paths. The discharge duct 82A may also include a merging section 82b that merges the gases from the flow paths communicating with each of the two outlets 69 of the cup 60A (see Figure 14(a)). An opening / closing member 83 may be provided at the merging section 82b where the flow paths of the discharge duct 82A merge. The discharge duct 82B forms two flow paths communicating with the two outlets 69 of the cup 60B and merges these flow paths. The discharge duct 82B may also include a merging section 82b that merges the gases from the flow paths communicating with each of the two outlets 69 of the cup 60B (see also Figure 14(a)). An opening / closing member 83 may be provided at the merging section where the flow paths of the discharge duct 82B merge.

[0083] The integrated duct 84 is a duct to which the exhaust ducts 82A and 82B are connected. The integrated duct 84 circulates the gas discharged by the exhaust duct 82A from cup 60A and the gas discharged by the exhaust duct 82B from cup 60B toward downstream equipment. In one example, the gas in each cup is discharged outside the wafer processing system 1 by the exhaust ducts 82A and 82B, and the integrated duct 84. The downstream end of the integrated duct 84 may be connected to equipment (e.g., another duct) that collects exhaust from multiple devices, including the wafer processing system 1.

[0084] Figure 14(a) schematically shows plan views of the discharge duct 82A, the discharge duct 82B, and the integrated duct 84. The integrated duct 84 may extend in direction D1. The direction of extension of the integrated duct 84 is the direction in which the line segment connecting one upstream end of the integrated duct 84 and one downstream end of the integrated duct 84 by the shortest distance extends. Hereinafter, a horizontal direction perpendicular to direction D1 will be referred to as "direction D2".

[0085] Figure 14(b) schematically shows a side view of the integrated duct 84. The connection port 82a at the downstream end of the discharge duct 82A (the connection port between the integrated duct 84 and the discharge duct 82A) may be located inside the integrated duct 84. The connection port 82a at the downstream end of the discharge duct 82B (the connection port between the integrated duct 84 and the discharge duct 82B) may be located inside the integrated duct 84. In the flow path of the integrated duct 84, the connection port 82a of the discharge duct 82A (first connection port) is located upstream of the connection port 82a of the discharge duct 82B (second connection port) (see also Figure 15). By introducing gas into the integrated duct 84 from the connection port 82a after passing through the confluence section 82b (after the gases are combined at the confluence section 82b), pressure loss can be reduced.

[0086] Figure 15 schematically shows a cross-section along the line XV-XV in Figure 14(b). The integrated duct 84 includes an outer wall 85, a dividing wall 86, a flow rate adjustment member 92, and a flow rate adjustment member 94. The outer wall 85 forms the entire flow path in the integrated duct 84. The dividing wall 86 divides the space enclosed by the outer wall 85 into a first space A1 and a second space A2. The first space A1 is a space (flow path) through which gas introduced via the connection port 82a of the discharge duct 82A flows. The second space A2 is a space (flow path) through which gas introduced via the connection port 82a of the discharge duct 82B flows.

[0087] The flow rate adjustment member 92 (first flow rate adjustment member) is provided in the first space A1 and adjusts the flow rate of the gas flowing through the first space A1. The flow rate adjustment member 92 may also be a damper. By adjusting the flow rate with the flow rate adjustment member 92, the flow rate exhausted from the cup 60A by the discharge duct 82A is adjusted. The flow rate adjustment member 92 may be positioned on the flow path of the integrated duct 84 upstream of the connection port 82a of the discharge duct 82B and downstream of the connection port 82a of the discharge duct 82A.

[0088] The flow rate adjustment member 94 (second flow rate adjustment member) is provided in the second space A2 and adjusts the flow rate of the gas flowing through the second space A2. The flow rate adjustment member 94 may also be a damper. By adjusting the flow rate with the flow rate adjustment member 94, the flow rate exhausted from the cup 60B by the discharge duct 82B is adjusted. The flow rate adjustment member 94 may be located downstream of the connection port 82a of the discharge duct 82B on the flow path of the integrated duct 84.

[0089] The outer wall 85 may be rectangular in cross-section perpendicular to the extending direction of the integrated duct 84. The downstream end of the discharge duct 82A and the downstream end of the discharge duct 82B are connected to one side wall 85a of the outer wall 85. One end of the dividing wall 86 is connected between the connection port 82a of the discharge duct 82A and the connection port 82a of the discharge duct 82B in the side wall 85a. The other end of the dividing wall 86 is located at end 84b, which is the downstream end of the integrated duct 84. As is clear from the configuration shown in Figure 15, the dividing walls 86 are provided continuously.

[0090] In the direction of extension of the integrated duct 84 (direction D1), when observed at a position corresponding to the downstream end of the connection port 82a of the discharge duct 82B, the flow path cross-sectional area S1 of the first space A1 is larger than the flow path cross-sectional area S2 of the second space A2. In Figure 15, the position corresponding to the downstream end of the connection port 82a of the discharge duct 82B is the position indicated by the arrows labeled "S1" and "S2".

[0091] The flow path cross-sectional area S1 is the area of ​​the flow path in the cross-section obtained by cutting the first space A1 with a plane perpendicular to direction D1. The flow path cross-sectional area S2 is the area of ​​the flow path in the cross-section obtained by cutting the second space A2 with a plane perpendicular to direction D1. The flow path cross-sectional area S2 is calculated excluding the downstream end of the discharge duct 82B, which is located inside the integrated duct 84.

[0092] A portion of the divided wall 86, including the end connected to the side wall 85a, is inclined with respect to direction D1, while the remaining portion extends along direction D1. The connection port 82a of the discharge duct 82B is located inside the side wall 85a. In direction D2, the positions of the side wall 85a and the connection port 82a of the discharge duct 82B are different. In direction D2, the connection port 82a of the discharge duct 82B is located between the side wall 85a and the side wall of the outer wall 85 opposite to (facing) the side wall 85a.

[0093] The portion of the downstream end of the discharge duct 82B that is located upstream on the flow path of the integrated duct 84 is connected to (in contact with) the inclined portion of the dividing wall 86, as shown by the portion enclosed by "X" in Figure 15. In the section where the remaining portion along the direction D1 of the dividing wall 86 is located, the integrated duct 84 may be formed such that the cross-sectional area of ​​the flow path of the second space A2 expands as it moves downstream.

[0094] Unlike the integrated duct 84 illustrated in Figure 15, it is also conceivable to combine and circulate the gas from the discharge duct 82A and the gas from the discharge duct 82B within the integrated duct without dividing it. In this case, it is conceivable to place a flow rate adjustment member near the downstream end of the integrated duct and adjust the exhaust flow rates of the discharge ducts 82A and 82B with this flow rate adjustment member. In such a configuration, due to the difference in distance between the flow rate adjustment member and the connection port, the exhaust flow rate from the downstream discharge duct 82B becomes larger than the exhaust flow rate from the discharge duct 82A. To reduce the difference in exhaust flow rates, it is necessary to provide an adjustment plate to narrow the connection port of the discharge duct 82B. Providing an adjustment plate at the connection port will result in pressure loss.

[0095] On the other hand, as illustrated in Figure 15, by separating the space through which the exhaust gas flows and arranging flow rate adjustment members in each, the exhaust flow rate can be balanced between the exhaust duct 82A and the exhaust duct 82B without the need for an adjustment plate. This eliminates the pressure loss caused by the arrangement of an adjustment plate. Furthermore, from the perspective of efficient exhaust in the integrated duct 84, the integrated duct 84 illustrated in Figure 15 can be used regardless of the structure of the cup 60.

[0096] (Modification) Figure 16 shows an example in which the portion located on the inside of the foot portion 78 (the portion labeled "78b" in Figure 16) is inclined. The portion 78b may be inclined starting from the connection point with the lower end of the first discharge space V1 (corresponding to the lower surface of the bottom portion 61), or it may be inclined starting from a position below the said lower surface. The portion 78b is inclined outward as it approaches the lower end of the foot portion 78. The inclined portion 78b allows the gas to be smoothly guided into the second discharge space V2 which extends outward, thereby reducing pressure loss. It is also possible to provide the inclination from the lower end of the inner wall 63, but in this case the first discharge space V1 will be narrowed, so it is better to provide the inclination at the foot portion 78 (below the lower surface of the bottom portion 61).

[0097] As shown in Figure 17, without an integrated duct 84, each of the discharge ducts 82A and 82B may have a portion through which gas flows along direction D1. Discharge duct 82A includes a section 82Ac extending along direction D2 from the confluence section 82b, and a section 82Ad connected to the downstream end of section 82Ac, with at least a portion extending along direction D1. Each of the sections 82Ac and 82Ad is composed of a cylindrical outer wall (for example, an outer wall with a rectangular cross-section). Two flow rate regulating members 92 may be provided in the flow path within section 82Ad.

[0098] The discharge duct 82B includes a section 82Bc extending in direction D2 from the confluence 82b, and a section 82Bd connected to the downstream end of section 82Bc, with at least a portion of it extending in direction D1. Section 82Bc is composed of a cylindrical outer wall (for example, an outer wall with a rectangular cross-section). Section 82Bd is composed of an outer wall that forms a flow path using a portion of the outer wall that constitutes section 82A of the discharge duct 82A (for example, an upper wall and a bottom wall, and a side wall connecting their ends). In the above configuration, the discharge duct 82A and the discharge duct 82B are connected to each other, and in a portion of its section, the discharge duct 82B forms a flow path using the side wall of the discharge duct 82A.

[0099] The portion of the side wall of section 82Ad of the discharge duct 82A that is used to form the flow path of the discharge duct 82B may include a portion that is inclined in direction D1. The position p1 of the downstream end of this inclined portion is located downstream of the position p2 of the portion that is furthest downstream in direction D1 within the flow path of section 82Bc. This allows the gas to be guided along the inclined portion when transitioning from flow within section 82Bc to flow within section 82Bd. This reduces pressure loss caused by the change in flow direction from section 82Bc to section 82Bd.

[0100] The gas from cup 60A and the gas from cup 60B may merge downstream of section 82Ad in the discharge duct 82A and downstream of section 82Bd in the discharge duct 82B. One flow rate adjustment member 92 is located near the downstream end of section 82Ad. This flow rate adjustment member 92 can suppress the generation of vortices, etc., when the gases from cup 60A and cup 60B merge (integrate). Alternatively, a guide section that can adjust the flow direction may be provided near the downstream end of section 82Ad instead of the flow rate adjustment member 92.

[0101] In Figure 18, the discharge ducts 82A and 82B are connected to each other, similar to the configuration shown in Figure 17. On the other hand, the discharge ducts 82A and 82B shown in Figure 18 form independent flow paths. For example, a portion of the side wall in section 82Ad of discharge duct 82A and a portion of the side wall in section 82Bd of discharge duct 82B are connected to each other.

[0102] A confluence duct 89 may be connected to the downstream end of section 82Ad of the discharge duct 82A and the downstream end of section 82Bd of the discharge duct 82B. The downstream ends of sections 82Ad and 82Bd may be fixed to the upstream end of the confluence duct 89 via flanges. In the confluence duct 89, the gas from cup 60A and the gas from cup 60B merge. By arranging the flow rate adjustment member 92 and the flow rate adjustment member 94 near the upstream end of the confluence duct 89, it is possible to adjust the gas flow so as not to generate vortices and / or backflow.

[0103] The discharge ducts 82A and 82B shown in Figure 19 differ from the discharge ducts 82A and 82B shown in Figure 17 in that they each include inclined sections 82Ae and 82Be, respectively. The inclined section 82Ae of discharge duct 82A connects the downstream end of section 82Ac to the upstream end of section 82Ad. The inclined section 82Ae forms a flow path for gas in a direction inclined in direction D2 and direction D1, respectively. The inclined section 82Be of discharge duct 82B connects the downstream end of section 82Bc to the upstream end of section 82Bd. The inclined section 82Be forms a flow path for gas in a direction inclined in direction D2 and direction D1, respectively.

[0104] By providing the inclined section 82Ae, pressure loss caused by a change in the flow direction from section 82Ac to section 82Ad can be reduced. By providing the inclined section 82Be, pressure loss caused by a change in the flow direction from section 82Bc to section 82Bd can be reduced. The discharge ducts 82A and 82B shown in Figure 18 may also be provided with inclined sections 82Ae and 82Be, respectively. An inclined section corresponding to either one of the discharge ducts 82A or 82B may be provided, while an inclined section corresponding to the other discharge duct 82A or 82B may not be provided.

[0105] As shown in Figure 20, when an integrated duct 84 is provided, portions having the same function as inclined portions 82Ae and 82Be may be provided in at least one of the discharge duct 82A and discharge duct 82B. A portion of the discharge duct 82A, including the connection port 82a, may be inclined with respect to both directions D1 and D2. A portion of the discharge duct 82B, including the connection port 82a, may be inclined with respect to both directions D1 and D2. In the configuration shown in Figure 20, pressure loss due to a change in the flow direction from the discharge duct 82A to the first space A1 and pressure loss due to a change in the flow direction from the discharge duct 82B to the second space A2 can be reduced.

[0106] As shown in Figure 21(a), the exhaust section 80 may include an integrated duct 84A instead of the integrated duct 84. In the integrated duct 84 shown in Figures 15 and 20, a dividing wall 86 is provided so that the space within the integrated duct 84 is partitioned along direction D2. In the integrated duct 84A, a dividing wall 86A is provided so that the space within the integrated duct 84A is partitioned along the Z-axis direction. The ends of the discharge ducts 82A and 82B, including their respective connection ports 82a, may be provided so as to penetrate the side wall of the integrated duct 84A, as shown in Figure 21(b). When using the integrated duct 84A, as with the integrated duct 84, the pressure loss caused by the arrangement of the adjustment plate can be eliminated.

[0107] As shown in Figure 22, when an integrated duct 84 is provided, the integrated duct 84 may be configured such that a portion of the dividing wall 86 is exposed to the outside of the integrated duct 84. In the configuration shown in Figure 15, a portion of the side wall 85a located upstream of the connection port 82a of the discharge duct 82B may be removed so that a portion of the dividing wall 86 is exposed to the outside. Figure 22 shows an enlarged view of the portion of the dividing wall 86 that is exposed to the outside after a portion of the side wall 85a has been removed. In the configuration shown in Figure 22, a portion of the dividing wall 86 functions as part of the outer wall of the integrated duct 84.

[0108] As shown in Figure 23, the exhaust section 80 may include an integrated duct 84B instead of the integrated duct 84. In the integrated duct 84 shown in Figures 15 and 20, the dividing wall 86 completely separates the space through which the gas discharged via the exhaust duct 82A flows from the space through which the gas discharged via the exhaust duct 82B flows. In other words, in the integrated duct 84, the gas discharged via the exhaust duct 82A and the gas discharged via the exhaust duct 82B flow without merging, all the way to the downstream equipment (for example, the merging duct 89).

[0109] In contrast to the integrated duct 84, the integrated duct 84B does not completely separate the space within the integrated duct 84B, and the dividing wall is only provided partway in direction D1. The integrated duct 84B includes a dividing wall 86B instead of a dividing wall 86. One upstream end of the dividing wall 86B is connected to the connection port 82a of the discharge duct 82A and the connection port 82a of the discharge duct 82B within the side wall 85a, similar to the dividing wall 86. The other end (downstream end) of the dividing wall 86B does not reach the end 84b. In direction D1, the other end of the dividing wall 86B may be located upstream of the downstream end of the connection port 82a of the discharge duct 82B. Unlike the example shown in Figure 23, in direction D1, the other end of the dividing wall 86B may be located at a position corresponding to the downstream end of the connection port 82a of the discharge duct 82B, or downstream of that end.

[0110] In the integrated duct 84B, the flow rate adjustment member 92 may be positioned upstream of the connection port 82a of the discharge duct 82B and downstream of the connection port 82a of the discharge duct 82A on the flow path of the integrated duct 84B. Alternatively, the flow rate adjustment member 94 may be positioned downstream of the connection port 82a of the discharge duct 82B on the flow path of the integrated duct 84B. In direction D1, the flow rate adjustment member 94 may be positioned closer to the end port 84b between the connection port 82a of the discharge duct 82B and the end port 84b. The flow rate adjustment member 94 may function to split the gas flow into two flow paths near the end port 84b (it may function as a flow straightening plate). By providing the dividing wall 86B, the flow direction of the gas discharged through the discharge duct 82B can be brought closer to the direction along direction D1 and then merged with the gas discharged through the discharge duct 82A.

[0111] As shown in Figure 24, the exhaust section 80 may include an integrated duct 84C instead of the integrated duct 84. In the integrated duct 84C, the space within the integrated duct 84C is not completely separated, similar to the integrated duct 84B. In the integrated duct 84C, the dividing wall is separated in the middle in direction D1. The integrated duct 84C includes a dividing wall 86C instead of the dividing wall 86 (dividing wall 86B). The dividing wall 86C is formed by a first portion 86Ca and a second portion 86Cb. The second portion 86Cb is located downstream of the first portion 86Ca and is separated from the first portion 86Ca.

[0112] One upstream end of the first portion 86Ca of the dividing wall 86C is connected to the connection port 82a of the discharge duct 82A and the connection port 82a of the discharge duct 82B within the side wall 85a, similar to the dividing wall 86. In direction D1, the other end (downstream end) of the first portion 86Ca is located at, for example, a position corresponding to or near the upstream end of the connection port 82a of the discharge duct 82B. In direction D1, one upstream end of the second portion 86Cb of the dividing wall 86C is located in a range that overlaps with the connection port 82a of the discharge duct 82B. The other end (downstream end) of the second portion 86Cb is located at end 84b. In this case, beyond the upstream end of the second portion 86Cb, the flow space is divided into space A11 and space A21 by the second portion 86Cb of the dividing wall 86C, and gas flows through these spaces.

[0113] In the integrated duct 84C, a portion of the gas introduced from the connection port 82a of the discharge duct 82B is introduced from the connection port 82a of the discharge duct 82A and merges with the gas circulating within the integrated duct 84C. In addition, in the dividing wall 86C, a gap (or opening) is provided because the first portion 86Ca and the second portion 86Cb are separated. By appropriately setting the range of this gap, the exhaust balance between the discharge duct 82A and the discharge duct 82B can be adjusted. Unlike the example shown in Figure 24, at least a portion of the gap (or opening) in the dividing wall 86C may be located downstream of one end of the connection port 82a of the discharge duct 82B in direction D1.

[0114] In the integrated duct 84C, the flow rate adjustment member 92 may be positioned upstream of the connection port 82a of the discharge duct 82B and downstream of the connection port 82a of the discharge duct 82A on the flow path of the integrated duct 84C. Alternatively, the flow rate adjustment member 94 may be positioned downstream of the connection port 82a of the discharge duct 82B on the flow path of the integrated duct 84C. The flow rate adjustment member 94 may be provided in space A21, one of the two spaces partitioned by the second portion 86Cb, through which the gas discharged via the discharge duct 82B primarily flows.

[0115] As shown in Figure 25, the exhaust section 80 may include an integrated duct 84D instead of the integrated duct 84. Unlike the integrated ducts 84 (integrated ducts 84A, 84B, 84C), the integrated duct 84D does not include a dividing wall that at least partially partitions the space within the integrated duct 84D. The gas introduced through the connection port 82a of the discharge duct 82B merges with the gas introduced through the connection port 82a of the discharge duct 82A within the integrated duct 84D. In the integrated duct 84D, the adjustment plate described above may be provided at the connection port 82a of the discharge duct 82B.

[0116] In the integrated duct 84D, the flow rate adjustment member 92 may be positioned upstream of the connection port 82a of the discharge duct 82B and downstream of the connection port 82a of the discharge duct 82A on the flow path of the integrated duct 84D. Alternatively, the flow rate adjustment member 94 may be positioned downstream of the connection port 82a of the discharge duct 82B on the flow path of the integrated duct 84D. In direction D1, the flow rate adjustment member 94 may be positioned closer to the end port 84b between the connection port 82a of the discharge duct 82B and the end port 84b. Since the integrated duct 84D does not have any members to partition its internal space, its structure can be simplified.

[0117] Figure 26 shows a configuration similar to that shown in Figure 17, in which the integrated duct 84 is not provided, and each of the discharge ducts 82A and 82B has a portion that allows gas to flow along direction D1. Figure 27 shows the cross-section along line A-A and line B-B in Figure 26.

[0118] Unlike the configuration shown in Figure 17, the discharge duct 82A includes, in addition to section 82Ad, section 82Af which is continuous with section 82Ad, as a portion through which gas flows along direction D1. Similarly, the discharge duct 82B includes, in addition to section 82Bd, section 82Bf which is continuous with section 82Bd, as a portion through which gas flows along direction D1. Furthermore, the portion forming section 82Ad and the portion forming section 82Bd are not connected, and a gap is provided in direction D2 (see the cross-section indicated as "B-B" in Figure 27).

[0119] The downstream ends of section 82Af and section 82Bf are connected to the confluence duct 89. In section 82Af and section 82Bf, the flow paths of discharge duct 82A and discharge duct 82B may be formed by a common partition wall 88 (see the cross section shown as "A-A" in Figure 27). In section 82Af and section 82Bf, discharge duct 82A and discharge duct 82B are connected. The maximum width ra in the cross section shown as "A-A" may be greater than the maximum width rb in the cross section shown as "B-B". When observing the cross section shown as "A-A", the thickness (width) of the partition wall 88 does not have to be constant. One flow rate control member 92 may be located in section 82Ad, and one flow rate control member 94 may be located in section 82Bf.

[0120] The cup 60 and exhaust unit 80 described above may also be used in liquid processing apparatus that performs liquid processing other than development processing (for example, formation of a resist film). In one of the various examples described above, at least some of the matters described in the other examples may be combined.

[0121] <Summary of this disclosure> This disclosure includes the following components [1] to

[18] and components 1 to 7.

[0122] [1] A substrate processing apparatus (1) comprising: a substrate holding part (52) that holds and rotates a substrate (W); liquid supply parts (54, 56) that supply processing liquid to the surface (Wa) of the substrate (W) held by the substrate holding part (52); a cup (60) that surrounds the substrate (W) held by the substrate holding part (52) and forms a flow path (FP) along the circumferential direction (R) around the rotation axis (Ax) of the substrate holding part (52) that guides gas to below the back surface (Wb) of the substrate (W); and an exhaust duct (82, 82A) that discharges the gas in the cup (60) through an exhaust port (69) provided in a part of the circumferential direction (R) within the cup (60), wherein the flow path of the exhaust port (69) is formed to widen as it moves away from the substrate (W) held by the substrate holding part (52). The gas guided by the flow path (FP) to the lower part of the back surface (Wb) collects at the outlet (69) in the circumferential direction (R). When the gases merge at the outlet (69), vortices may be generated due to collisions between gases coming from different directions. However, since the flow path on the downstream side of the outlet (69) is widened, the gas velocity is reduced, and the degree to which vortices are generated can be reduced. As a result, the pressure loss caused by the merging of gases at the outlet (69) can be reduced. Therefore, it is possible to efficiently exhaust gas from inside the cup (60).

[0123] [2] The substrate processing apparatus (1) according to [1] above, wherein the cup (60) includes a bottom portion (61) facing the back surface (Wb) of the substrate (W) held by the substrate holding portion (52), a first annular wall (64) that runs in the circumferential direction (R) and protrudes upward from the upper surface of the bottom portion (61), and a second annular wall (63) that is positioned inside the first annular wall (64), runs in the circumferential direction (R), and protrudes upward from the upper surface of the bottom portion (61), and when a cross-section perpendicular to the axis of rotation (Ax) and passing through the first annular wall (64) and the second annular wall (63) is observed from above, a through hole (H1) is provided between the first annular wall (64) and the second annular wall (63), and the area at one end downstream of the discharge port (69) is larger than the area of ​​the through hole (H1). In this case, the area at one downstream end of the outlet (69) is larger than the through-hole (H1) which corresponds to the opening for gas to move between the first annular wall (64) and the second annular wall (63) down to below the bottom (61). This reduces the degree to which vortices are generated when gases merge at the outlet (69). As a result, pressure fluctuations at the outlet (69) can be reduced, making it possible to improve exhaust efficiency.

[0124] [3] The substrate processing apparatus (1) described in [2] above, wherein the portion (V2) in which the flow path widens downstream of the discharge port (69) is formed by an annular foot portion (78) protruding downward from the lower surface of the bottom portion (61). In this case, the portion that widens the flow path downstream of the discharge port (69) can be easily formed.

[0125] [4] The substrate processing apparatus (1) described in [2] or [3] above, wherein the portion (V2) of the discharge port (69) where the flow path widens on the downstream side widens outwards. In this case, interference between the member that forms the portion that widens the flow path on the downstream side of the discharge port (69) and members other than the cup, such as the substrate holding portion (52), can be easily avoided.

[0126] [5] The substrate processing apparatus (1) according to any one of [2] to [4] above, wherein the bottom portion (61) defines the edge of the through hole (H1) when the above cross-section is observed from above, and includes an inclined surface (61a) that forms the flow of gas to the portion (V2) where the flow path widens downstream of the outlet (69). In this case, at least a portion of the gas that joins the outlet (69) can be smoothly introduced into the portion where the flow path widens downstream, and the degree to which vortices are generated can be further reduced. As a result, the pressure loss caused by the confluence of gases at the outlet (69) can be further reduced.

[0127] [6] The substrate processing apparatus (1) according to any one of [2] to [5] above, wherein the first annular wall (64) and the second annular wall (63) are formed such that the spacing between them is uniform in the circumferential direction (R). In this case, the gas can be uniformly guided down to the lower surface (Wb) in the circumferential direction (R).

[0128] [7] The substrate processing apparatus (1) according to any one of [2] to [6] above, wherein the cup (60) further includes partitions (75, 76) provided to divide the through hole (H1) into two regions aligned along the circumferential direction (R) when the cross-section is observed from above. In this case, the partitions (75, 76) can reduce the occurrence of collisions between gases at the outlet (69). As a result, the generation of vortices can be reduced and pressure fluctuations at the outlet (69) can be suppressed.

[0129] [8] The substrate processing apparatus (1) according to any one of [2] to [6] above, wherein the cup (60) is positioned outside the first annular wall (64) and the second annular wall (63), and further includes an annular outer wall (62) projecting upward from the outer edge of the upper surface of the bottom (61), and in any longitudinal section including the axis of rotation (Ax), the distance between the second annular wall (63) and the first annular wall (64) is smaller than the distance between the first annular wall (64) and the outer wall (62). In this case, it is easy to form a flow path in the space between the annular wall (64) and the outer wall (62) that involves changing the direction of the vertical flow.

[0130] [9] The substrate processing apparatus (1) according to [8] above, wherein the cup (60) further includes an annular third annular wall (73) that extends intersecting the bottom (61) and is spaced apart from the bottom (61), and in the longitudinal section, the distance (d3) between the first annular wall (64) and the third annular wall (73) is greater than the distance (d2) between the third annular wall (73) and the bottom (61). In this case, the possibility that the processing liquid will flow into the section beyond the flow path between the first annular wall (64) and the third annular wall (73) due to the flow of gas can be reduced.

[0131]

[10] The substrate processing apparatus (1) according to [8] above, wherein the cup (60) further includes an annular third annular wall (73) that extends intersecting the bottom (61) and is positioned at a distance from the bottom (61), and in the longitudinal section, the distance (d2) between the third annular wall (73) and the bottom (61) is greater than the distance (d1) between the third annular wall (73) and the outer wall (62). In this case, it is possible to suppress an increase in the gas flow velocity in the section from between the third annular wall (73) and the outer wall (62) to between the third annular wall (73) and the bottom (61). As a result, it is possible to reduce the possibility that the processing liquid will move to unintended downstream sections due to an increase in the gas flow velocity.

[0132]

[11] The substrate processing apparatus (1) according to [8] above, wherein the cup (60) further includes an annular third annular wall (73) that extends intersecting the bottom (61) and is spaced apart from the bottom (61), and in the longitudinal section, includes a flow path between the first annular wall (64) and the third annular wall (73), and the minimum spacing between members downstream of the flow path (d3, d4, d5) is greater than the spacing between the third annular wall (73) and the bottom (61) (d2), and greater than the spacing between the third annular wall (73) and the outer wall (62) (d1). In this case, the flow path for circulating gas to below the back surface (Wb) of the substrate (W) gradually widens, so that the pressure loss due to the flow path can be reduced.

[0133]

[12] Further comprising a second substrate holding portion (52) corresponding to a substrate holding portion (52), a second cup (60B) corresponding to a cup (60A), a second discharge duct (82B) corresponding to a discharge duct (82A), and an integrated duct (84, 84A) to which the discharge duct (82A) and the second discharge duct (82B) are connected, wherein in the flow path of the integrated duct (84, 84A), the first connection port (82a) with the discharge duct (82A) is located upstream of the second connection port (82a) with the second discharge duct (82B). The substrate processing apparatus (1) according to any one of [1] to

[11] above, wherein the integrated duct (84, 84A) includes a dividing wall (86, 86A) separating a first space (A1) through which gas introduced via a first connection port (82a) flows and a second space (A2) through which gas introduced via a second connection port (82a) flows, a first flow rate adjusting member (92) provided in the first space (A1) to adjust the flow rate, and a second flow rate adjusting member (94) provided in the second space (A2) to adjust the flow rate. In this case, the exhaust flow rate can be balanced between the first connection port (82a) and the second connection port (82a) without placing a member for adjusting the exhaust flow rate inside the first connection port (82a). As a result, when using the integrated duct, it is possible to efficiently exhaust gas from inside the cup (60A, 60B).

[0134]

[13] The substrate holding section (52), the cup (60A), the second substrate holding section (52), and the second cup (60B) are housed in a single housing (51), and the liquid supply section (54, 56) is capable of supplying the processing liquid to the substrate (W) held in the substrate holding section (52) and the substrate (W) held in the second substrate holding section (52), respectively, as described in

[12] above. In this case, the number of parts of the substrate processing apparatus equipped with two cups can be reduced, and the apparatus can be simplified.

[0135]

[14] The substrate processing apparatus (1) according to

[12] or

[13] above, wherein the second flow rate adjusting member (94) is located downstream of the second connection port (82a), and the first flow rate adjusting member (92) is located upstream of the second connection port (82a) and downstream of the first connection port (82a). In this case, the exhaust flow rate from the first connection port (82a) and the exhaust flow rate from the second connection port (82a) can be adjusted with high precision.

[0136]

[15] The substrate processing apparatus (1) according to any one of

[12] to

[14] above, wherein the integrated duct (84) is formed to extend along one direction (D1), one end of the dividing wall (86) is connected between the first connection port (82a) and the second connection port (82a) of the side wall (85a) of the integrated duct (84), the other end of the dividing wall (86) is located at the downstream end of the integrated duct (84), and when observed at a position corresponding to the downstream end of the second connection port (82a) in the extending direction (D1) of the integrated duct (84), the flow path cross-sectional area (S1) of the first space (A1) is larger than the flow path cross-sectional area (S2) of the second space (A2). In this case, the difference in exhaust flow rate that may occur between the first connection port (82a) and the second connection port (82a) due to the difference in distance from the downstream end (84b) of the integrated duct (84) can be reduced.

[0137]

[16] The substrate processing apparatus (1) according to any one of

[12] to

[14] above, wherein the integrated duct (84) is formed to extend along one direction (D1), one end of the dividing wall (86) is connected between the first connection port (82a) and the second connection port (82a) of the side wall (85a) of the integrated duct (84), the other end of the dividing wall (86) is located at the downstream end of the integrated duct (84), a portion of the dividing wall (86) including the aforementioned one end is inclined with respect to the extending direction (D1) of the integrated duct (84), the second connection port (82a) is located inside the side wall (85a) of the integrated duct (84), and the portion of the downstream end of the second discharge duct (82B) located on the upstream side in the flow path of the integrated duct (84) is connected to the inclined portion of the dividing wall (86). In this case, the gas introduced into the second space (A2) from the second connection port (82a) immediately reaches the inclined portion of the dividing wall (86). As a result, the gas introduced into the second space (A2) can be smoothly circulated toward the downstream end of the integrated duct (84).

[0138]

[17] Further comprising a second substrate holding part (52) corresponding to a substrate holding part (52), a second cup (60B) corresponding to a cup (60A), a second discharge duct (82B) corresponding to a discharge duct (82A), and an integrated duct (84B, 84C, 84D) to which the discharge duct (82A) and the second discharge duct (82B) are connected, wherein in the flow path of the integrated duct (84B, 84C, 84D), the first connection port (82a) with the discharge duct (82A) is located upstream of the second connection port (82a) with the second discharge duct (82B), and the integrated duct (84B, The substrate processing apparatus (1) according to any one of [1] to

[11] above, wherein 84C, 84D) includes a first flow rate adjusting member (92) and a second flow rate adjusting member (94) for adjusting the flow rate, and is configured such that the gas introduced through the second connection port (82a) merges with the gas introduced through the first connection port (82a), the second flow rate adjusting member (94) is located downstream of the second connection port (82a), and the first flow rate adjusting member (92) is located upstream of the second connection port (82a) and downstream of the first connection port (82a). In this case, at least a portion of the gas discharged through the discharge duct (82A) and at least a portion of the gas discharged through the second discharge duct (82B) merge within the integrated duct (84B, 84C, 84D). This reduces the impact of the merging of these gases in equipment downstream of the integrated ducts (84B, 84C, 84D).

[0139]

[18] The substrate holding section (52), the cup (60A), the second substrate holding section (52), and the second cup (60B) are housed in a single housing (51), and the liquid supply section (54, 56) is capable of supplying the processing liquid to the substrate (W) held in the substrate holding section (52) and the substrate (W) held in the second substrate holding section (52), respectively, in the substrate processing apparatus (1) as described in

[17] above. In this case, the number of parts of the substrate processing apparatus equipped with two cups can be reduced, and the apparatus can be simplified.

[0140] (Note 1) The apparatus comprises: a first substrate holder for holding and rotating a substrate; a first cup surrounding the substrate held by the first substrate holder and forming a flow path along the circumferential direction around the rotation axis of the first substrate holder that guides gas to the lower back surface of the substrate; a first discharge duct for discharging the gas in the cup through a discharge port provided in the first cup; a second substrate holder corresponding to the first substrate holder; a second cup corresponding to the first cup; a second discharge duct corresponding to the first discharge duct; and an integrated duct to which the first and second discharge ducts are connected, wherein, on the flow path of the integrated duct, the first connection port to the first discharge duct is located upstream of the second connection port to the second discharge duct; and the integrated duct has a dividing wall separating a first space through which gas introduced via the first connection port flows and a second space through which gas introduced via the second connection port flows. A substrate processing apparatus comprising: a first flow rate adjusting member provided in the first space for adjusting the flow rate; and a second flow rate adjusting member provided in the second space for adjusting the flow rate. (Note 2) The substrate processing apparatus according to Note 1, further comprising: a liquid supply unit capable of supplying processing liquid to the substrate held in the first substrate holding unit and the substrate held in the second substrate holding unit; and a housing that accommodates the first substrate holding unit, the first cup, the second substrate holding unit, and the second cup. (Note 3) The substrate processing apparatus according to Note 1 or Note 2, wherein the second flow rate adjusting member is located downstream of the second connection port, and the first flow rate adjusting member is located upstream of the second connection port and downstream of the first connection port. (Note 4) The substrate processing apparatus according to any one of Notes 1 to 3, wherein the integrated duct is formed to extend in one direction, one end of the dividing wall is connected between the first connection port and the second connection port of the side wall of the integrated duct, the other end of the dividing wall is located at the downstream end of the integrated duct, and when observed at a position corresponding to the downstream end of the second connection port in the extending direction of the integrated duct, the flow path cross-sectional area of ​​the first space is larger than the flow path cross-sectional area of ​​the second space.(Note 5) The substrate processing apparatus according to any one of Notes 1 to 4, wherein the integrated duct is formed to extend in one direction, one end of the dividing wall is connected between the first connection port and the second connection port of the side wall of the integrated duct, the other end of the dividing wall is located at the downstream end of the integrated duct, a portion of the dividing wall including the one end is inclined with respect to the extending direction of the integrated duct, the second connection port is located inside the side wall of the integrated duct, and the portion of the downstream end of the second discharge duct that is located on the upstream side in the flow path of the integrated duct is connected to the inclined portion of the dividing wall. (Note 6) The apparatus comprises: a first substrate holder for holding and rotating a substrate; a first cup surrounding the substrate held by the first substrate holder and forming a flow path along the circumferential direction around the rotation axis of the first substrate holder that guides gas to the area below the back surface of the substrate; a first discharge duct for discharging the gas in the cup through a discharge port provided in the first cup; a second substrate holder corresponding to the first substrate holder; a second cup corresponding to the first cup; a second discharge duct corresponding to the first discharge duct; and an integrated duct to which the first and second discharge ducts are connected, wherein, on the flow path of the integrated duct, the first connection port to the first discharge duct is located upstream of the second connection port to the second discharge duct; the integrated duct includes a first flow rate adjusting member and a second flow rate adjusting member for adjusting the flow rate, and is configured such that the gas introduced through the second connection port merges with the gas introduced through the first connection port. A substrate processing apparatus wherein the second flow rate adjustment member is located downstream of the second connection port, and the first flow rate adjustment member is located upstream of the second connection port and downstream of the first connection port. (Note 7) The substrate processing apparatus according to Note 6, wherein the substrate holding portion, the cup, the second substrate holding portion, and the second cup are housed in a single housing, and the liquid supply portion is capable of supplying the processing liquid to the substrate held in the substrate holding portion and to the substrate held in the second substrate holding portion, respectively.

[0141] 1...wafer processing system, W...wafer, Wa...front surface, Wb...back surface, U1...liquid processing unit, 51...housing, 52...substrate holding part, Ax...rotation axis, 60, 60A, 60B...cup, 61...bottom part, 61a...inclined surface, 62...outer wall, 63...inner wall, 64...annular wall, 73...annular wall, 69...discharge port, H1...through hole, 75, 76...partition part, 78...foot part, 80...exhaust part, 82, 82A, 82B...discharge duct, 82a...connection port, 84, 84A, 84B, 84C, 84D...integrated duct, 85a...side wall, 86, 86A...dividing wall, A1...first space, A2...second space, 92, 94...flow rate adjustment member.

Claims

1. A substrate processing apparatus comprising: a substrate holding unit for holding and rotating a substrate; a liquid supply unit for supplying a processing liquid to the surface of the substrate held by the substrate holding unit; a cup surrounding the substrate held by the substrate holding unit and forming a flow path along the circumferential direction around the rotation axis of the substrate holding unit that guides gas to below the back surface of the substrate; and a discharge duct for discharging the gas in the cup through a discharge port provided in a part of the circumferential region within the cup, wherein the discharge port is formed such that the flow path widens as it moves away from the substrate held by the substrate holding unit.

2. The substrate processing apparatus according to claim 1, wherein the cup includes a bottom facing the back surface of the substrate held in the substrate holding portion, a first annular wall that runs along the circumferential direction and protrudes upward from the upper surface of the bottom, and a second annular wall that is positioned inside the first annular wall, runs along the circumferential direction and protrudes upward from the upper surface of the bottom, and when a cross-section perpendicular to the axis of rotation and passing through the first annular wall and the second annular wall is observed from above, a through hole is provided between the first annular wall and the second annular wall, and the area at one downstream end of the discharge port is larger than the area of ​​the through hole.

3. The substrate processing apparatus according to claim 2, wherein the portion of the discharge port where the flow path widens on the downstream side is formed by an annular foot protruding downward from the lower surface of the bottom.

4. The portion of the discharge port where the flow path widens on the downstream side is widened so as to protrude outwards, as described in claim 2.

5. The substrate processing apparatus according to claim 2, wherein the bottom portion defines the edge of the through hole when the cross-section is observed from above, and includes an inclined surface that forms a gas flow to the portion of the outlet where the flow path widens on the downstream side.

6. The substrate processing apparatus according to claim 2, wherein the first annular wall and the second annular wall are formed such that the spacing between them is uniform in the circumferential direction.

7. The substrate processing apparatus according to claim 2, wherein the cup further includes a partition portion provided such that, when the cross-section is observed from above, the through hole is divided into two regions aligned along the circumferential direction.

8. The substrate processing apparatus according to claim 2, wherein the cup further includes an annular outer wall positioned outside the first annular wall and the second annular wall, projecting upward from the outer edge of the upper surface of the bottom, and in any longitudinal section including the axis of rotation, the distance between the second annular wall and the first annular wall is smaller than the distance between the first annular wall and the outer wall.

9. The substrate processing apparatus according to claim 8, wherein the cup further includes an annular third annular wall extending intersecting the bottom and positioned at a distance from the bottom, and in the longitudinal section, the distance between the first annular wall and the third annular wall is greater than the distance between the third annular wall and the bottom.

10. The substrate processing apparatus according to claim 8, wherein the cup further includes an annular third annular wall extending intersecting the bottom and positioned at a distance from the bottom, and in the longitudinal section, the distance between the third annular wall and the bottom is greater than the distance between the third annular wall and the outer wall.

11. The substrate processing apparatus according to claim 8, wherein the cup further includes an annular third annular wall extending intersecting the bottom and spaced apart from the bottom, and the longitudinal section includes a flow path between the first annular wall and the third annular wall, and the minimum distance between members downstream of the flow path is greater than the distance between the third annular wall and the bottom, and greater than the distance between the third annular wall and the outer wall.

12. A substrate processing apparatus according to any one of claims 1 to 11, further comprising: a second substrate holding portion corresponding to the substrate holding portion; a second cup corresponding to the cup; a second discharge duct corresponding to the discharge duct; and an integrated duct to which the discharge duct and the second discharge duct are connected, wherein, in the flow path of the integrated duct, the first connection port to the discharge duct is located upstream of the second connection port to the second discharge duct; the integrated duct includes: a dividing wall separating a first space through which gas introduced via the first connection port flows and a second space through which gas introduced via the second connection port flows; a first flow rate adjusting member provided in the first space for adjusting the flow rate; and a second flow rate adjusting member provided in the second space for adjusting the flow rate.

13. The substrate processing apparatus according to claim 12, wherein the substrate holding portion, the cup, the second substrate holding portion, and the second cup are housed in a single housing, and the liquid supply portion is capable of supplying the processing liquid to the substrate held in the substrate holding portion and to the substrate held in the second substrate holding portion, respectively.

14. The substrate processing apparatus according to claim 12, wherein the second flow rate adjusting member is located downstream of the second connection port, and the first flow rate adjusting member is located upstream of the second connection port and downstream of the first connection port.

15. The substrate processing apparatus according to claim 12, wherein the integrated duct is formed to extend in one direction, one end of the dividing wall is connected between the first connection port and the second connection port of the side wall of the integrated duct, the other end of the dividing wall is located at the downstream end of the integrated duct, and when observed in the extending direction of the integrated duct at a position corresponding to the downstream end of the second connection port, the flow path cross-sectional area of ​​the first space is larger than the flow path cross-sectional area of ​​the second space.

16. The substrate processing apparatus according to claim 12, wherein the integrated duct is formed to extend in one direction, one end of the dividing wall is connected between the first connection port and the second connection port of the side wall of the integrated duct, the other end of the dividing wall is located at the downstream end of the integrated duct, a portion of the dividing wall including the one end is inclined with respect to the extending direction of the integrated duct, the second connection port is located inside the side wall of the integrated duct, and the portion of the downstream end of the second discharge duct that is located upstream on the flow path of the integrated duct is connected to the inclined portion of the dividing wall.

17. A substrate processing apparatus according to any one of claims 1 to 11, further comprising: a second substrate holding portion corresponding to the substrate holding portion; a second cup corresponding to the cup; a second discharge duct corresponding to the discharge duct; and an integrated duct to which the discharge duct and the second discharge duct are connected, wherein, in the flow path of the integrated duct, a first connection port to the discharge duct is located upstream of a second connection port to the second discharge duct; the integrated duct includes a first flow rate adjusting member and a second flow rate adjusting member for adjusting the flow rate, configured such that a gas introduced through the second connection port merges with a gas introduced through the first connection port; the second flow rate adjusting member is located downstream of the second connection port; and the first flow rate adjusting member is located upstream of the second connection port and downstream of the first connection port.

18. The substrate processing apparatus according to claim 17, wherein the substrate holding portion, the cup, the second substrate holding portion, and the second cup are housed in a single housing, and the liquid supply portion is capable of supplying the processing liquid to the substrate held in the substrate holding portion and to the substrate held in the second substrate holding portion, respectively.

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