Line for manufacturing semiconductor substrate, method for manufacturing semiconductor substrate, method for inspecting semiconductor substrate, method for processing semiconductor substrate, and method for evaluating processing of semiconductor substrate

Abstract

The present invention achieves good and stable substrate quality in processing of a semiconductor substrate. Provided is a line for manufacturing a semiconductor substrate, the line including a line body and a line control system. The line body includes a processing device for processing the semiconductor substrate, a light scattering measurement device for obtaining measurement values of the intensity of scattered light from the semiconductor substrate by means of a light scattering method, and a conveyance device for conveying the semiconductor substrate. The line control system includes a conveyance control unit which controls the conveyance device on the basis of the measurement values obtained by the light scattering measurement device.

Description

A semiconductor substrate manufacturing line, a semiconductor substrate manufacturing method, a semiconductor substrate inspection method, a semiconductor substrate processing method, and a semiconductor substrate processing method.

[0001] This disclosure relates to the processing of semiconductor substrates.

[0002] Semiconductor substrates are the foundation for semiconductor devices and are crucial products that determine the performance and reliability of those devices. Therefore, achieving good and stable substrate quality is essential in the processing of semiconductor substrates. However, improving the processing quality of semiconductor substrates is by no means easy. Furthermore, determining substrate quality requires the introduction of multiple types of measurement methods, which is inconvenient in terms of cost and operation.

[0003] International Publication No. 2022 / 158394

[0004] The objective of this disclosure is to achieve good and stable substrate quality in the processing of semiconductor substrates.

[0005] To achieve this objective, this disclosure provides a line for manufacturing a semiconductor substrate, comprising a line body and a line control system, wherein the line body comprises a processing apparatus for processing the semiconductor substrate, a light scattering measuring apparatus for obtaining measured values ​​of the intensity of scattered light from the semiconductor substrate by light scattering method, and a transport apparatus for transporting the semiconductor substrate, and the line control system comprises a transport control unit, the transport control unit controls the transport apparatus based on the measured values ​​obtained by the light scattering measuring apparatus.

[0006] Furthermore, in order to achieve the objectives of this invention, this disclosure provides a method for manufacturing a semiconductor substrate, comprising: a processing step for processing a semiconductor substrate; a light scattering measurement step for obtaining a measurement value of the intensity of scattered light from the semiconductor substrate by a light scattering method; and a transport step for transporting the semiconductor substrate, wherein the transport step includes transporting the semiconductor substrate based on the measurement value obtained in the light scattering measurement step.

[0007] Furthermore, in order to achieve the objectives of this invention, the present disclosure provides a method for inspecting a semiconductor substrate, comprising: a light scattering measurement step of obtaining a measurement value of the intensity of scattered light from the semiconductor substrate by a light scattering method; and a quality determination step of determining whether the measurement value obtained in the light scattering measurement step meets a predetermined quality standard, and inspecting the semiconductor substrate based on the determination result.

[0008] Furthermore, in order to achieve the objective, this disclosure provides a method for processing a semiconductor substrate, comprising: a light scattering measurement step of obtaining a measurement value of the intensity of scattered light from the semiconductor substrate by a light scattering method; a processing step of processing the semiconductor substrate after the light scattering measurement step; and a processing selection step of applying a processing step scale to the measurement value obtained in the light scattering measurement step and selecting a processing step indicated by the application result, wherein the processing device scale is a scale that associates the measurement value obtained by the light scattering measurement device with a plurality of processing steps.

[0009] Furthermore, in order to achieve the objectives of this invention, the present disclosure provides a method for evaluating the processing of a semiconductor substrate, comprising: a processing step for processing a semiconductor substrate; a light scattering measurement step for obtaining measured values ​​of the intensity of scattered light from the semiconductor substrate using a light scattering method for the semiconductor substrate after the processing step; and a processing evaluation step for evaluating whether the time-series data of the measured values ​​obtained in the light scattering measurement step meets predetermined evaluation criteria, and evaluating the processing step based on the evaluation results.

[0010] The lines, manufacturing methods, and procedures provided in this disclosure enable the processing of semiconductor substrates to achieve good and stable substrate quality.

[0011] This is a schematic block diagram of a line according to an embodiment of the present disclosure. This is a schematic configuration diagram of the optical system of a light scattering measuring device according to an embodiment of the present disclosure. This is a schematic block diagram of the control system of a light scattering measuring device according to an embodiment of the present disclosure. This is a flowchart of a manufacturing method according to an embodiment of the present disclosure. This is a flowchart of a light scattering measurement process according to an embodiment of the present disclosure. This is a flowchart of a light scattering measurement process according to an embodiment of the present disclosure. This is a graph of surface properties and measured values ​​related to an example of light scattering measurement. This is a graph of measured values ​​and required process amount related to an example of light scattering measurement. This is a flowchart of a method for inspecting a semiconductor substrate according to an embodiment of the present disclosure. This is a flowchart of a method for processing a semiconductor substrate according to an embodiment of the present disclosure. This is a flowchart of a method for evaluating the processing of a semiconductor substrate according to an embodiment of the present disclosure. This is a schematic block diagram of a line according to a first example of an embodiment of the present disclosure. This is a flowchart of a manufacturing method according to a first example of an embodiment of the present disclosure. This is a schematic configuration diagram of a heat treatment apparatus according to an embodiment of the present disclosure. This is a schematic configuration diagram of a heat treatment apparatus according to an embodiment of the present disclosure. This is a schematic configuration diagram of a heat treatment apparatus according to an embodiment of the present disclosure. This is a schematic explanatory diagram of an etching-type heat treatment process according to an embodiment of the present disclosure. This is a schematic explanatory diagram of a growth-type heat treatment process according to an embodiment of the present disclosure. This is a flow chart of a heat treatment process according to an embodiment of the present disclosure. This is a schematic block diagram of a line according to a second example of an embodiment of the present disclosure. This is a flow chart of a manufacturing method according to a second example of an embodiment of the present disclosure. This is a schematic block diagram of a line according to a third example of an embodiment of the present disclosure. This is a flow chart of a manufacturing method according to a third example of an embodiment of the present disclosure.

[0012] A typical semiconductor substrate processing method includes slicing, grinding / lapping, and polishing processes. The slicing process obtains the raw substrate from an ingot. The grinding / lapping process removes surface irregularities from the raw substrate. The polishing process flattens the surface of the raw substrate. Because the processing method is subdivided into multiple steps, not only the content of each step but also the way the steps interact with each other determines the processing quality. Furthermore, since each step involves mechanical contact with the semiconductor substrate, the processing quality is inherently unstable. Therefore, improving the processing quality of semiconductor substrates is not easy.

[0013] Furthermore, both surface quality and internal quality of the substrate are important. To determine surface quality, for example, a method of measuring surface properties using an atomic force microscope (AFM) can be used. To determine internal quality, for example, the method described in Patent Document 1 by the present inventors, namely, a method of measuring the intensity of scattered light from inside the substrate using a light scattering method, can be used. However, no general-purpose method that can comprehensively determine substrate quality is known. Therefore, determining substrate quality requires the introduction of multiple types of measurement methods, which is inconvenient in terms of cost and operation. This situation can be said to be a factor that reduces motivation for improving the processing quality of semiconductor substrates.

[0014] Due to these circumstances, there were absolutely no semiconductor substrate inspection devices that could be realistically introduced into semiconductor substrate manufacturing lines, that is, in the mass production sites of semiconductor substrates. Furthermore, no concrete methods for improving processing quality had been developed.

[0015] In view of the above, this disclosure provides the following semiconductor substrate manufacturing lines [1] to

[13] .

[0016] Line [1] includes a line body and a line control system. The line body includes a processing device for processing semiconductor substrates, a light scattering measuring device for obtaining measured values ​​of the intensity of scattered light from semiconductor substrates using the light scattering method, and a transport device for transporting semiconductor substrates. The line control system includes a transport control unit, which controls the transport device based on the measured values ​​obtained by the light scattering measuring device. Line [1] comprehensively determines the substrate quality through the interaction of the light scattering measuring device and the line control system, and transports semiconductor substrates according to that substrate quality. Therefore, Line [1] can achieve good and stable substrate quality in the processing of semiconductor substrates. Furthermore, because Line [1] employs the light scattering method, the determination of substrate quality can be completed quickly, achieving a realistic throughput as a mass production line for semiconductor substrates. For example, the light scattering method can measure the entire surface of a 6-inch substrate in about 3 minutes per substrate.

[0017] Line [2] is line [1], and the transport control unit determines whether the measurement values ​​obtained by the light scattering measuring device meet predetermined quality standards, and controls the transport device based on the determination result. Line [2] improves and stabilizes the substrate quality of semiconductor substrates on the manufacturing line.

[0018] Line [3] is line [2], and the transport control unit obtains either an acceptance judgment corresponding to the measurement value meeting the quality standard, or a rejection judgment corresponding to the measurement value not meeting the quality standard, as a result of the measurement value determination. If an acceptance judgment is obtained, the transport device is controlled to transport the semiconductor substrate along the line body. If a rejection judgment is obtained, the transport device is controlled to stop transporting the semiconductor substrate along the line body. Line [3] improves and stabilizes the substrate quality of semiconductor substrates on the manufacturing line.

[0019] Line [4] is one of lines [1] to [3], and the line body is formed to branch from a light scattering measuring device to a plurality of processing devices at at least one location on the line body, the transport control unit applies a processing device scale to the measurement value obtained by the light scattering measuring device and controls the transport device to transport the semiconductor substrate to the processing device at the branching destination indicated by the application result, the processing device scale is a scale that associates the measurement value obtained by the light scattering measuring device with the plurality of processing devices at the branching destination, and is a line. Line [4] appropriately selects a processing device that is suitable for the substrate quality.

[0020] Line [5] is one of lines [1] to [4], and the line body is formed such that a processing device is located in front of a light scattering measuring device at at least one point on the line body, and the line control system includes a processing control unit, which evaluates whether the time-series data of the measured values ​​obtained by the light scattering measuring device meets predetermined evaluation criteria and controls the processing device based on the evaluation result. Line [5] monitors processing quality by monitoring the time change of substrate quality.

[0021] Line [6] is line [5], and the processing control unit obtains either a normal evaluation, which corresponds to the time series data meeting the evaluation criteria, or an abnormal evaluation, which corresponds to the time series data not meeting the evaluation criteria, as an evaluation result of the time series data. If a normal evaluation is obtained, the processing equipment is controlled not to change the processing conditions, and if an abnormal evaluation is obtained, the processing equipment is controlled to change the processing conditions. Line [6] monitors processing quality by monitoring the time change of substrate quality.

[0022] Line [7] is one of lines [1] to [6], and the line body is formed such that a processing device is located after a light scattering measuring device at at least one location on the line body, and the line control system includes a processing control unit, which applies a processing condition scale to the measurement values ​​obtained by the light scattering measuring device and controls the processing device so that the processing conditions are as indicated by the application result, and the processing condition scale is a scale that correlates the measurement values ​​obtained by the light scattering measuring device with the processing conditions of the processing device, and is a line. Line [7] appropriately selects processing conditions that are suitable for substrate quality.

[0023] Line [8] is one of lines [1] to [7], where the line body includes a plurality of light scattering measuring devices, each light scattering measuring device includes an optical system, and the optical system includes photomultiplier tubes, and in the order of the light scattering measuring devices in the line body, the gain of the photomultiplier tube included in the later light scattering measuring device is equal to or greater than the gain of the photomultiplier tube included in the earlier light scattering measuring device. Line [8] appropriately sets the gain of the photomultiplier tubes for each processing stage.

[0024] Line [9] is one of lines [1] to [8], and the line body is a line in which processing equipment includes a slicing device that slices semiconductor ingots into semiconductor substrates and a grinding / lapping device that grinds and / or laps semiconductor substrates. Line [9] achieves good and stable substrate quality in a line that includes existing processing equipment.

[0025] Line

[10] is one of lines [1] to [9], and the line body is a line that includes a grinding / lapping apparatus for grinding and / or lapping semiconductor substrates and a polishing apparatus for polishing semiconductor substrates as processing equipment. Line

[10] achieves good and stable substrate quality in a line that includes existing processing equipment.

[0026] Line

[11] is one of lines [1] to

[10] , and the line itself is a line that includes an etching device for etching a semiconductor substrate and a growth device for growing a semiconductor substrate as processing equipment. Line

[11] achieves good and stable substrate quality in a line that includes existing processing equipment.

[0027] Line

[12] is one of lines [1] to

[11] , the semiconductor substrate is a SiC substrate, the line body includes a heat treatment apparatus for heat treating the SiC substrate as processing equipment, the heat treatment apparatus includes a crucible for containing the SiC substrate, and the crucible contains SiC. Line

[12] is a line that includes processing equipment for processing the SiC substrate by a physical vapor transport method, and achieves good and stable substrate quality.

[0028] Line

[13] is line

[12] , and the heat treatment apparatus includes a second crucible containing a crucible, the second crucible containing carburized tantalum. Line

[13] prevents carbonization of the SiC contained in the crucible.

[0029] Furthermore, this disclosure provides the following methods for manufacturing semiconductor substrates [1] to

[13] .

[0030] Manufacturing method [1] is a manufacturing method that includes a processing step for processing a semiconductor substrate and a light scattering measurement step for obtaining a measurement of the intensity of scattered light from the semiconductor substrate by light scattering. Manufacturing method [1] comprehensively determines the substrate quality and manufactures the semiconductor substrate according to that substrate quality. Therefore, manufacturing method [1] can achieve good and stable substrate quality in the processing of semiconductor substrates.

[0031] Manufacturing method [2] is manufacturing method [1], which includes a quality determination step, the quality determination step including determining whether the measured value obtained in the light scattering measurement step meets a predetermined quality standard. Manufacturing method [2] improves and stabilizes the substrate quality of the semiconductor substrate.

[0032] Manufacturing method [3] is manufacturing method [2], wherein the quality determination step includes obtaining either an acceptance judgment corresponding to the measurement value meeting the quality standard, or a rejection judgment corresponding to the measurement value not meeting the quality standard, as the result of the measurement value determination. Manufacturing method [3] improves and stabilizes the substrate quality of the semiconductor substrate.

[0033] The manufacturing method [4] is any one of the manufacturing methods [1] to [3], and includes a processing selection step. The processing selection step includes applying a processing process scale to the measurement value obtained in the light scattering measurement step and selecting the processing process indicated by the application result. The processing process scale is a scale that associates the measurement value obtained in the light scattering measurement step with a plurality of processing processes. The manufacturing method [4] appropriately selects a processing process that conforms to the substrate quality.

[0034] The manufacturing method [5] is any one of the manufacturing methods [1] to [4], and includes a processing condition change step. The processing condition change step includes a processing evaluation step. The processing evaluation step includes evaluating whether the time series data of the measurement value obtained in the light scattering measurement step satisfies a predetermined evaluation criterion. The processing condition change step includes changing the processing conditions in the processing step performed before the light scattering measurement step based on the evaluation result obtained in the processing evaluation step. The manufacturing method [5] monitors the processing quality by monitoring the temporal change of the substrate quality.

[0035] The manufacturing method [6] is the manufacturing method [5], wherein the processing evaluation step obtains either a normal evaluation corresponding to the fact that the time series data satisfies the evaluation criterion or an abnormal evaluation corresponding to the fact that the time series data does not satisfy the evaluation criterion as the evaluation result of the time series data. The processing condition change step includes not changing the processing conditions in the processing step when a normal evaluation is obtained in the processing evaluation step, and changing the processing conditions in the processing step when an abnormal evaluation is obtained in the processing evaluation step. The manufacturing method [6] monitors the processing quality by monitoring the temporal change of the substrate quality.

[0036] The manufacturing method [7] is any one of the manufacturing methods [1] to [6], and includes a processing condition change step. The processing condition change step includes a processing condition selection step. The processing condition selection step includes applying a processing condition scale to the measurement value obtained in the light scattering measurement step and selecting the processing conditions indicated by the application result. The processing condition change step includes changing the processing conditions in the processing step based on the selection in the processing condition selection step. The processing condition scale is a scale that associates the measurement value obtained in the light scattering measurement step with the processing conditions in the processing step. The manufacturing method [7] appropriately selects the processing conditions that conform to the substrate quality.

[0037] The manufacturing method [8] is any one of the manufacturing methods [1] to [7], includes a plurality of light scattering measurement steps, and the light scattering measurement step includes a main measurement step of obtaining a signal value of a photomultiplier tube and obtaining a measurement value based on the obtained signal value. The main measurement step includes an acquisition step of controlling an optical system to obtain a signal value of the photomultiplier tube and a conversion step of obtaining a measurement value from the signal value obtained in the acquisition step. In the light scattering measurement steps that are in a sequential relationship, the gain of the photomultiplier tube in the acquisition step of the subsequent light scattering measurement step is equal to or greater than the gain of the photomultiplier tube in the acquisition step of the subsequent light scattering measurement step. The manufacturing method [8] appropriately sets the gain of the photomultiplier tube for the processing stage.

[0038] The manufacturing method [9] is any one of the manufacturing methods [1] to [8], and includes a slicing step of slicing a semiconductor ingot into a semiconductor substrate and a grinding / lapping step of grinding and / or lapping the semiconductor substrate as processing steps. The manufacturing method [9] realizes good and stable substrate quality in a line including existing processing steps.

[0039] The manufacturing method

[10] is any one of the manufacturing methods [1] to [9], and includes a grinding / lapping step of grinding and / or lapping a semiconductor substrate and a polishing step of polishing the semiconductor substrate as processing steps. The manufacturing method

[10] realizes good and stable substrate quality in a line including existing processing steps.

[0040] The manufacturing method

[11] is any one of the manufacturing methods [1] to

[10] , and includes an etching step of etching a semiconductor substrate and a growth step of growing the semiconductor substrate as processing steps. The manufacturing method

[11] realizes good and stable substrate quality in a line including existing processing apparatuses.

[0041] Manufacturing method

[12] is any one of manufacturing methods [1] to

[11] , wherein the semiconductor substrate is a SiC substrate, and the manufacturing method includes a heat treatment step for heat-treating the SiC substrate as a processing step, the heat treatment step includes a preparation step for preparing the SiC substrate for heat treatment and a heating step for heating the SiC substrate, the preparation step includes placing the SiC substrate in a crucible, the heating step includes heating the crucible, and the crucible contains SiC. Manufacturing method

[12] is a manufacturing method that includes a processing step for processing the SiC substrate by a physical vapor transport method, and achieves good and stable substrate quality.

[0042] Manufacturing method

[13] is manufacturing method

[12] , wherein the preparation step includes placing a crucible in a second crucible, the second crucible containing carburized tantalum. Manufacturing method

[13] prevents carbonization of the SiC contained in the crucible.

[0043] Furthermore, this disclosure provides the following methods for inspecting semiconductor substrates [1] to [2].

[0044] Method [1] for inspecting a semiconductor substrate includes a light scattering measurement step of obtaining a measurement value of the intensity of scattered light from the semiconductor substrate by a light scattering method, and a quality determination step of determining whether the measurement value obtained in the light scattering measurement step meets a predetermined quality standard, and inspecting the semiconductor substrate based on the determination result. Method [1] for inspecting a semiconductor substrate improves and stabilizes the substrate quality of the semiconductor substrate.

[0045] Method [2] for inspecting a semiconductor substrate is Method [1] for inspecting a semiconductor substrate, wherein the quality determination step includes obtaining, as a result of the determination of the measured value, either an acceptance judgment corresponding to the measured value meeting the quality standard, or a rejection judgment corresponding to the measured value not meeting the quality standard. Method [2] for inspecting a semiconductor substrate improves and stabilizes the substrate quality of the semiconductor substrate.

[0046] Furthermore, this disclosure provides the following methods for processing semiconductor substrates [1] to [3].

[0047] A method for processing a semiconductor substrate [1] includes a light scattering measurement step of obtaining measured values ​​of the intensity of scattered light from the semiconductor substrate by a light scattering method, a processing step of processing the semiconductor substrate after the light scattering measurement step, and a processing selection step of applying a processing scale to the measured values ​​obtained in the light scattering measurement step and selecting a processing step indicated by the application result, wherein the processing scale is a scale that associates the measured values ​​obtained in the light scattering measurement step with multiple processing steps. The method for processing a semiconductor substrate [1] appropriately selects a processing step that is suitable for the substrate quality.

[0048] Method [2] for processing a semiconductor substrate is Method [1] for processing a semiconductor substrate, and includes a processing condition selection step in which a processing condition scale is applied to a measurement value obtained in a light scattering measurement step and processing conditions indicated by the application result are selected, wherein the processing condition scale is a scale that corresponds the measurement value obtained in the light scattering measurement step with the processing conditions in the processing step. Method [2] for processing a semiconductor substrate appropriately selects processing conditions that are suitable for the substrate quality.

[0049] Method [3] for processing a semiconductor substrate includes a light scattering measurement step of obtaining measured values ​​of the intensity of scattered light from the semiconductor substrate by light scattering method, a processing step of processing the semiconductor substrate after the light scattering measurement step, and a processing condition selection step of applying a processing condition scale to the measured values ​​obtained in the light scattering measurement step and selecting processing conditions indicated by the application results, wherein the processing condition scale is a scale that correlates the measured values ​​obtained in the light scattering measurement step with the processing conditions in the processing step. Method [3] for processing a semiconductor substrate appropriately selects processing conditions that are suitable for the substrate quality.

[0050] Furthermore, this disclosure provides the following methods [1] to [2] for evaluating the processing of semiconductor substrates.

[0051] Method [1] for evaluating the processing of a semiconductor substrate includes a processing step for processing a semiconductor substrate, a light scattering measurement step for obtaining measured values ​​of the intensity of scattered light from the semiconductor substrate using a light scattering method for the semiconductor substrate after the processing step, and a processing evaluation step for evaluating whether the time-series data of the measured values ​​obtained in the light scattering measurement step meets predetermined evaluation criteria and evaluating the processing step based on the evaluation results. Method [1] for evaluating the processing of a semiconductor substrate monitors the processing quality by monitoring the time change in substrate quality.

[0052] Method [2] for evaluating the processing of a semiconductor substrate is Method [1] for evaluating the processing of a semiconductor substrate, wherein the processing evaluation step includes obtaining either a normal evaluation corresponding to the time series data meeting the evaluation criteria, or an abnormal evaluation corresponding to the time series data not meeting the evaluation criteria, as an evaluation result of the time series data. Method [2] for evaluating the processing of a semiconductor substrate monitors the processing quality by monitoring the time change of the substrate quality.

[0053] This disclosure further provides line X as an embodiment. Figures 1 to 3 illustrate this embodiment.

[0054] Line X manufactures the semiconductor substrate 1. The material of the semiconductor substrate 1 may be an elemental semiconductor (e.g., Si (silicon), Ge (germanium), Se (selenium)) or a compound semiconductor (e.g., GaAs (gallium arsenide), InGaAs (indium gallium arsenide), InN (indium nitride), ZnO (zinc oxide)). The material of the semiconductor substrate 1 may be a power semiconductor material (e.g., SiC (silicon carbide), GaN (gallium nitride), AlN (aluminum nitride), Ga2O3 (gallium(III) oxide), sapphire). The semiconductor substrate 1 is preferably a SiC substrate.

[0055] Line X includes a line body 10 (see Figure 1). The line body 10 is an element for manufacturing the semiconductor substrate 1. The line body 10 is formed as a collection of multiple devices. The line body 10 is formed so that the multiple devices follow a predetermined order. The order of the line body 10 may be such that the entire set of devices is in series, or at least some of the devices are in parallel. The order of the line body 10 may branch at least once, or merge at least once. The order of the line body 10 may be such that a single device exists at multiple locations.

[0056] The line body 10 includes processing equipment 11. The processing equipment 11 is an element for processing the semiconductor substrate 1. Preferably, the line body 10 includes a plurality of processing equipment 11. The processing equipment 11 may be any equipment for processing the semiconductor substrate 1. The processing equipment 11 may be equipment for processing the semiconductor substrate 1 in a complex process.

[0057] The processing apparatus 11 may be a slicing apparatus 12 that slices the semiconductor ingot to form a semiconductor substrate 1. The slicing apparatus 12 may be a wire saw slicing apparatus that slices the semiconductor ingot with a wire saw, or it may be a laser slicing apparatus that damages the semiconductor ingot with a laser to peel off the semiconductor substrate 1.

[0058] The processing apparatus 11 may be a planarizing apparatus for planarizing the semiconductor substrate 1. The planarizing apparatus may be a grinding / lapping apparatus 13 for grinding and / or lapping the semiconductor substrate 1, or a polishing apparatus 14 for polishing the semiconductor substrate 1 to a mirror finish. The grinding / lapping apparatus 13 may be a grinding apparatus or a lapping apparatus. Two grinding / lapping apparatuses 13 may be provided, with the first grinding / lapping apparatus 13 being a grinding apparatus and the second grinding / lapping apparatus 13 being a lapping apparatus. The polishing apparatus 14 may be a mechanical polishing apparatus for mechanically polishing the semiconductor substrate 1, or a chemical mechanical polishing apparatus for mechanically and chemically polishing the semiconductor substrate 1. Two polishing apparatuses 14 may be provided, with the first polishing apparatus 14 being a mechanical polishing apparatus and the second polishing apparatus 14 being a chemical mechanical polishing apparatus.

[0059] The processing apparatus 11 may be an etching apparatus 15 for etching the semiconductor substrate 1. The etching apparatus 15 may be a wet etching apparatus that chemically etches the semiconductor substrate 1 with a liquid, a dry etching apparatus (for example, a plasma etching apparatus or a gas etching apparatus) that chemically etches the semiconductor substrate 1 with a gas, or a thermal sublimation etching apparatus that etches the semiconductor substrate 1 by thermal sublimation.

[0060] The processing apparatus 11 may be a growth apparatus 16 for growing the semiconductor substrate 1. The growth apparatus 16 may be a vapor phase growth apparatus (e.g., a chemical vapor phase growth apparatus, a physical vapor phase growth apparatus) for growing the semiconductor substrate 1 in a gas phase environment, a liquid phase growth apparatus for growing the semiconductor substrate 1 in a liquid phase environment, or a molecular beam growth apparatus for growing the semiconductor substrate 1 by supplying raw materials with a molecular beam.

[0061] In the order of the line body 10, it is preferable that the slicing device 12 is before the grinding / lapping device 13, polishing device 14, etching device 15, and growth device 16. In the order of the line body 10, it is preferable that the grinding / lapping device 13 is after the slicing device 12 and before the polishing device 14, etching device 15, and growth device 16. In the order of the line body 10, it is preferable that the polishing device 14 is after the slicing device 12 and grinding / lapping device 13 and before the etching device 15 and growth device 16. In the order of the line body 10, it is preferable that the etching device 15 is after the slicing device 12, grinding / lapping device 13, polishing device 14, and before the growth device 16. In the order of the line body 10, it is preferable that the growth device 16 is after the slicing device 12, grinding / lapping device 13, polishing device 14, and etching device 15.

[0062] The line body 10 includes a light scattering measuring device 17. The light scattering measuring device 17 is an element that obtains measured values ​​of the intensity of scattered light from the semiconductor substrate 1 by the light scattering method. Preferably, the light scattering measuring device 17 obtains measured values ​​of the intensity of a series of scattered light from the entire surface of the semiconductor substrate 1. Line X preferably includes a single light scattering measuring device 17, but may include a plurality of light scattering measuring devices 17.

[0063] The light scattering measuring device 17 includes an optical system 17100 (see Figure 2). The optical system 17100 is an element that projects incident light L1 onto the semiconductor substrate 1 and receives scattered light L2 from the semiconductor substrate 1.

[0064] The optical system 17100 includes a light projection unit 17110. The light projection unit 17110 is an element that projects incident light L1 onto the semiconductor substrate 1.

[0065] The light projection unit 17110 includes a light source 17111. The light source 17111 is an element that generates incident light L1. Preferably, the light source 17111 generates light with high monochromaticity. Preferably, the light source 17111 generates light with high coherence. Preferably, the light source 17111 generates linearly polarized light. The light source 17111 may be a laser oscillator that generates laser light (for example, a gas laser oscillator, a solid-state laser oscillator, or a semiconductor laser oscillator). Among laser oscillators, the light source 17111 is preferably a He-Ne laser oscillator or a YAG laser oscillator.

[0066] The light projection unit 17110 includes a wavelength filter 17112. The wavelength filter 17112 is an element that selectively transmits light of a specific wavelength in the incident light L1. The wavelength filter 17112 may be a bandpass filter, a longpass filter, a shortpass filter, a notch filter, or a combination thereof.

[0067] The light projection unit 17110 includes a polarization control element 17113. The polarization control element 17113 is an element that directs the incident light L1 to a specific polarization direction. The polarization control element 17113 may be a half-wave plate or a polarizing filter.

[0068] The light projection unit 17110 includes a focusing lens 17114. The focusing lens 17114 is an element that focuses the incident light L1 onto the semiconductor substrate 1. The focusing lens 17114 may be a point focusing lens, a line focusing lens, or a surface focusing lens. The focusing lens 17114 is preferably a cylindrical lens among line focusing lenses.

[0069] The optical system 17100 includes a light-receiving unit 17120. The light-receiving unit 17120 is an element that receives scattered light L2 from the semiconductor substrate 1.

[0070] The light receiving unit 17120 includes a photomultiplier tube 17121. The photomultiplier tube 17121 is a light receiving element that converts scattered light L2 into a signal.

[0071] The light receiving unit 17120 includes a slit 17122. The slit 17122 is an element that selectively allows light from a specific direction to pass through in the scattered light L2.

[0072] The light receiving unit 17120 includes an imaging lens 17123 and an objective lens 17124. The imaging lens 17123 and the objective lens 17124 are elements that image scattered light L2 onto the photomultiplier tube 17121.

[0073] The light scattering measurement device 17 includes a control system 17200 (see Figure 3). The control system 17200 performs various processes using a processor (e.g., CPU) and various storage operations using memory (e.g., main memory, storage).

[0074] The control system 17200 includes a user interface. The user interface is an element that accepts operations from the operator and presents the results of the operator's operations. Preferably, the user interface includes an input device (e.g., a switch, a dial, a keyboard, a touchscreen). Preferably, the user interface includes a display device.

[0075] The control system 17200 includes a signal acquisition unit 17210. The signal acquisition unit 17210 is an element that controls the optical system 17100 to acquire signal values ​​from the photomultiplier tube 17121. When controlling the optical system 17100, the signal acquisition unit 17210 may follow operations accepted by the user interface. The signal acquisition unit 17210 may acquire a series of signal values ​​from the photomultiplier tube 17121. The signal acquisition unit 17210 may acquire multiple signal values ​​for the continuous output of the photomultiplier tube 17121 as a series of signal values ​​from the photomultiplier tube 17121.

[0076] The signal acquisition unit 17210 controls the intensity of the incident light L1 by controlling the output of the light source 17111.

[0077] The signal acquisition unit 17210 controls the polarization direction of the incident light L1 by controlling the polarization control element 17113. When the polarization control element 17113 is a half-wave plate, the signal acquisition unit 17210 controls the installation position of the half-wave plate to add or remove the half-wave plate from the optical path of the incident light L1 in order to control the polarization direction of the incident light L1. When the polarization control element 17113 is a polarizing filter, the signal acquisition unit 17210 controls the installation angle of the polarizing filter in order to control the polarization direction of the incident light L1.

[0078] The signal acquisition unit 17210 controls the measurement position on the semiconductor substrate 1 by controlling the installation positions of the light emission unit 17110 and the light receiving unit 17120 and / or the installation position of the semiconductor substrate 1.

[0079] The signal acquisition unit 17210 controls the incident angle θ of the incident light L1 to be emitted within a range of 0° or more and 90° or less by controlling the installation angle of the light emission unit 17110. The signal acquisition unit 17210 may control the incident angle θ within a range of 40° or more, 45° or more, or 50° or more. The signal acquisition unit 17210 may control the incident angle θ within a range of 80° or less, 75° or less, or 70° or less.

[0080] The signal acquisition unit 17210 controls the scattering angle φ of the received scattered light L2 within a range of 0° or more and 90° or less by controlling the installation angle of the light receiving unit 17120. The signal acquisition unit 17210 may control the scattering angle φ within a range of 20° or more, 25° or more, or 30° or more. The signal acquisition unit 17210 may control the scattering angle φ within a range of 70° or less, 65° or less, or 60° or less. When the signal acquisition unit 17210 controls the scattering angle φ, it is preferable that the scattering angle φ is not the reflection angle.

[0081] The control system 17200 includes a signal evaluation unit 17220. The signal evaluation unit 17220 is an element that evaluates the signal values ​​acquired by the signal acquisition unit 17210.

[0082] The signal evaluation unit 17220 evaluates the magnitude of the signal value acquired by the signal acquisition unit 17210 to obtain a signal value evaluation result, and sets the applied voltage value according to the evaluation result. As a result of the signal value evaluation, the signal evaluation unit 17220 obtains one of the following: an overvalue evaluation corresponding to a large signal value, an undervalue evaluation corresponding to a small signal value, or an appropriate value evaluation corresponding to an appropriate signal value. The overvalue evaluation, undervalue evaluation, and appropriate value evaluation may be further subdivided.

[0083] If the signal values ​​acquired by the signal acquisition unit 17210 are a series of signal values, the signal evaluation unit 17220 may consider a representative value of the series of signal values ​​(for example, mean, median, maximum, minimum) as the signal value acquired by the signal acquisition unit 17210 when evaluating the magnitude of the signal values. If the signal values ​​acquired by the signal acquisition unit 17210 are a series of signal values, the signal evaluation unit 17220 may use an overvalue ratio, which is the ratio of the number of signal values ​​corresponding to an overvalue evaluation, an undervalue ratio, which is the ratio of the number of signal values ​​corresponding to an undervalue evaluation, and an appropriate value ratio, which is the ratio of the number of signal values ​​corresponding to an appropriate value evaluation, when evaluating the magnitude of the signal values. The signal evaluation unit 17220 may set an overvalue target ratio and an undervalue target ratio, and if the overvalue ratio is higher than the overvalue target ratio, it may obtain an overvalue evaluation; if the undervalue ratio is higher than the undervalue target ratio, it may obtain an undervalue evaluation; and if the overvalue ratio is lower than the overvalue target ratio and the undervalue ratio is lower than the undervalue target ratio, it may obtain an appropriate value evaluation. The signal evaluation unit 17220 may set an appropriate value target ratio, and if the appropriate value ratio is lower than the appropriate value target ratio, it may obtain an overvalue evaluation or an undervalue evaluation; and if the appropriate value ratio is higher than the appropriate value target ratio, it may obtain an appropriate value evaluation. When setting the overvalue target ratio, undervalue target ratio and appropriate value target ratio, the signal evaluation unit 17220 may follow the operations accepted by the user interface.

[0084] The signal evaluation unit 17220 may set an output target range for the photomultiplier tube 17121 as a reference when evaluating the magnitude of the signal value. When setting the output target range, the signal evaluation unit 17220 makes the output target range narrower than the output range of the photomultiplier tube 17121. When setting the output target range, it is preferable for the signal evaluation unit 17220 to make the upper limit of the output target range smaller than the upper limit of the output range, and the lower limit of the output target range larger than the lower limit of the output range. When setting the output target range, the voltage control unit 17230 may follow the operations accepted by the user interface. When obtaining the evaluation result of the signal value, the signal evaluation unit 17220 obtains an overvalue evaluation if the signal value is greater than the upper limit of the output target range, an undervalue evaluation if the signal value is smaller than the lower limit of the output target range, and an appropriate value evaluation if the signal value is within the output target range.

[0085] The control system 17200 includes a voltage control unit 17230. The voltage control unit 17230 is an element that controls the applied voltage value of the photomultiplier tube 17121. When controlling the applied voltage value, the voltage control unit 17230 may select the applied voltage value from stepped values ​​or from continuous values. When controlling the applied voltage value, the voltage control unit 17230 may follow the operations accepted by the user interface. The applied voltage value controlled by the voltage control unit 17230 may be the voltage value directly applied to the photomultiplier tube 17121, or it may be the voltage value that controls the voltage directly applied to the photomultiplier tube 17121. When controlling the applied voltage value of the photomultiplier tube 17121, it is preferable that the voltage control unit 17230 controls the power supply.

[0086] The voltage control unit 17230 calculates the gain corresponding to the applied voltage value and / or the applied voltage value corresponding to the gain using the dependency data between the applied voltage value and the gain in the photomultiplier tube 17121. The gain calculated by the voltage control unit 17230 may be the gain of the photomultiplier tube 17121, defined as the photoelectron multiplication factor, or it may be the relative value of the gain of the photomultiplier tube 17121. One of the dependency data between the applied voltage value and the gain may be a dataset of applied voltage values ​​and the gain, or it may be a relational expression between the applied voltage value and the gain. Another dependency data between the applied voltage value and the gain may be the specification data of the photomultiplier tube 17121. When using the dependency data between the applied voltage value and the gain, the voltage control unit 17230 may create the dependency data between the applied voltage value and the gain, or it may acquire the dependency data between the applied voltage value and the gain via a user interface.

[0087] The voltage control unit 17230 calculates the gain when acquiring the signal value of the photomultiplier tube 17121. When calculating the gain when acquiring the signal value, it is preferable that the voltage control unit 17230 uses the dependence data between the applied voltage value and the gain to calculate the gain corresponding to the applied voltage value when acquiring the signal value, and uses the calculated gain as the gain when acquiring the signal value.

[0088] When setting the applied voltage value, the voltage control unit 17230 preferably changes the applied voltage value if the signal evaluation unit 17220 obtains an overvaluation or undervaluation. The voltage control unit 17230 preferably controls the applied voltage value in accordance with the condition that the signal acquisition unit 17210 obtains a signal value corresponding to an appropriate evaluation.

[0089] When the voltage control unit 17230 sets the applied voltage value, it is preferable to change the applied voltage value to a negative value if the signal evaluation unit 17220 obtains an overvaluation, and to change the applied voltage value to a positive value if the signal evaluation unit 17220 obtains an undervaluation. When the voltage control unit 17230 sets the applied voltage value, it is preferable to maintain the applied voltage value if the signal evaluation unit 17220 obtains an appropriate value evaluation, but the applied voltage value may be changed. When the voltage control unit 17230 selects the applied voltage value from stepped values, it may change the applied voltage value by one step or by two or more steps. When the voltage control unit 17230 selects the applied voltage value from continuous values, it may set the amount or rate of change of the applied voltage value. When setting the amount or rate of change, the voltage control unit 17230 may use a constant amount or rate of change, select a constant amount or rate of change from a plurality of candidates, or calculate the amount or rate of change.

[0090] When setting the applied voltage value, the voltage control unit 17230 may determine the target gain of the photomultiplier tube 17121 from the gain at the time of signal value acquisition, and calculate the applied voltage value corresponding to the target gain using the dependence data between the applied voltage value and the gain. Here, the target gain is the gain that conforms to the condition that the signal acquisition unit 17210 acquires a signal value equivalent to the appropriate value evaluation. When determining the target gain, it is preferable that the voltage control unit 17230 calculates a correction factor to make the signal value acquired by the signal acquisition unit 17210 a signal value equivalent to the appropriate value evaluation, and sets the target gain to the gain at the time of signal value acquisition multiplied by the correction factor.

[0091] The control system 17200 includes an output unit 17240. The output unit 17240 is an element that outputs a measured value based on the signal value acquired by the signal acquisition unit 17210. When outputting the measured value, the output unit 17240 may present the measurement result via a user interface.

[0092] In outputting the measured value, it is preferable that the output unit 17240 uses the signal value divided by the gain obtained when acquiring the signal value as the measured value.

[0093] When outputting the measured value, the output unit 17240 preferably calibrates the signal value acquired by the signal acquisition unit 17210. When calibrating the signal value, the output unit 17240 preferably calculates a calibration factor and divides the signal value by the calibration factor. Here, the calibration factor is the ratio of the signal value of the photomultiplier tube 17121 at the time of calibration to the signal value of the photomultiplier tube 17121 at the time of reference. When calculating the calibration factor, the output unit 17240 preferably uses calibration data that includes the signal value at the time of reference and the signal value at the time of calibration. When using calibration data, the output unit 17240 may create the calibration data or acquire the calibration data via a user interface.

[0094] The control system 17200 may include a storage unit 17250. The storage unit 17250 is an element that stores a signal dataset. Here, the signal dataset is a collection of signal data, and the signal data includes the signal value acquired by the signal acquisition unit 17210 and the applied voltage value at the time of signal value acquisition. The storage unit 17250 creates signal data and makes the created signal data one of the signal datasets. When creating signal data, the storage unit 17250 may include a target label that characterizes the semiconductor substrate 1 in the created data. When creating signal data, the storage unit 17250 may include an optical system label that characterizes the optical system 17100 in the signal data. When creating signal data, the storage unit 17250 may determine the target label and the optical system label, or may acquire the target label and the optical system label via a user interface.

[0095] If the signal values ​​acquired by the signal acquisition unit 17210 are a series of signal values, the storage unit 17250 considers a representative value of the series of signal values ​​(for example, mean, median, maximum, and minimum) as the signal values ​​acquired by the signal acquisition unit 17210 when creating the signal data. If the signal values ​​acquired by the signal acquisition unit 17210 are a series of signal values, the storage unit 17250 may include the series of signal values ​​in the signal data when creating the signal data.

[0096] The storage unit 17250 calculates the relative gain of the photomultiplier tube 17121 and adds the calculated relative gain to the signal dataset. When calculating the relative gain, the storage unit 17250 calculates the relative signal value and uses the calculated relative signal value as the relative gain. When calculating the relative signal value, the storage unit 17250 may determine a reference applied voltage value and use the signal value included in the signal data including the reference applied voltage value as the reference for the relative value. If the signal data includes a target label, the storage unit 17250 may determine a reference target label and use the signal value included in the signal data including the reference applied voltage value and the reference target label as the reference for the relative value. If the signal data includes an optical system label, the storage unit 17250 calculates the relative signal value for each optical system label.

[0097] In the storage unit 17250, if the signal evaluation unit 17220 obtains an overvaluation or undervaluation, it is preferable that the signal data including the signal value evaluated by the signal evaluation unit 17220 is not included as one of the signal datasets.

[0098] The storage unit 17250 creates dependency data between applied voltage and gain using the signal dataset. The storage unit 17250 may use the signal dataset with the relative gain added as one of the dependency data between applied voltage and gain. The storage unit 17250 may perform regression analysis on the signal dataset with the relative gain added to estimate a relational expression, and use the estimated relational expression as the dependency data between applied voltage and gain. When performing regression analysis, the storage unit 17250 prefers to use a log-log equation (for example, a log-log linear equation or a log-log higher-order equation) as the model for the relational expression. If the signal data includes optical system labels, the storage unit 17250 creates dependency data between applied voltage and gain for each optical system label.

[0099] The storage unit 17250 creates calibration data using the signal dataset. The storage unit 17250 may use the signal dataset as is for calibration data. If the signal data includes an optical system label, when the storage unit 17250 uses the signal dataset as is for calibration data, it determines a reference optical system label and uses the signal value included in the signal data including the reference optical system label as the signal value at the reference time. If the signal data includes a target label, when the storage unit 17250 uses the signal dataset as is for calibration data, it may determine a reference applied voltage value and use the signal value included in the signal data including the reference applied voltage value and the reference optical system label as the signal value at the reference time.

[0100] In the order of the line body 10, the light scattering measuring device 17 is preferably located after the processing device 11, and also preferably before the processing device 11. The line body 10 is preferably configured such that the processing device 11 is located before the light scattering measuring device 17 at at least one location, and also preferably configured such that the processing device 11 is located after the light scattering measuring device 17. The order of the line body 10 is preferably such that one or more processing devices 11 and the light scattering measuring device 17 are arranged in a cyclical manner. The line body 10 is preferably configured such that one or more processing devices 11 and the light scattering measuring device 17 are arranged in a cyclical manner.

[0101] In a light scattering measurement device 17 that is in a front-to-back relationship with the line body 10, it is preferable that the gain of the photomultiplier tube 17121 included in the rear light scattering measurement device 17 is equal to or greater than the gain of the photomultiplier tube 17121 included in the front light scattering measurement device 17. If the light scattering measurement devices 17 that are in a front-to-back relationship with the line body 10 are the same device, it is preferable that the applied voltage value controlled by the voltage control unit 17230 included in the rear light scattering measurement device 17 is equal to or greater than the applied voltage value controlled by the voltage control unit 17230 included in the front light scattering measurement device 17.

[0102] The line body 10 may include quality evaluation devices other than the light scattering measuring device 17. The line body 10 may include dimensional measuring devices (e.g., thickness measuring device, surface texture measuring device, warpage measuring device), surface detection devices (e.g., surface defect detection device, particle detection device), composition measuring devices (e.g., crystal structure measuring device, impurity measuring device, dopant measuring device), electrical property measuring devices (e.g., electrical resistivity measuring device, carrier concentration measuring device), and thermal property measuring devices (e.g., thermal conductivity measuring device).

[0103] The line body 10 preferably includes a cleaning device. The cleaning device is an element for cleaning the semiconductor substrate 1. The cleaning device may be a wet cleaning device that chemically cleans the semiconductor substrate 1 with a liquid (e.g., an RCA cleaning device, an acid cleaning device, an alkaline cleaning device), a dry cleaning device that chemically cleans the semiconductor substrate 1 with a gas (e.g., a gas cleaning device, a plasma cleaning device), or a physical cleaning device that physically cleans the semiconductor substrate 1 (e.g., a brush cleaning device, an ultrasonic cleaning device, a pure water cleaning device). The cleaning device may be an etching device that etches the semiconductor substrate 1. The cleaning device may be a wet etching device that chemically etches the semiconductor substrate 1 with a liquid, a dry etching device that chemically etches the semiconductor substrate 1 with a gas (e.g., a plasma etching device, a gas etching device), or a thermal sublimation etching device that etches the semiconductor substrate 1 by thermal sublimation.

[0104] In the order of the line body 10, the cleaning device is preferably located after the processing device 11 or the light scattering measuring device 17, and it is also preferable that it is located before the processing device 11 or the light scattering measuring device 17. The line body 10 is preferably configured such that the cleaning device is located before the processing device 11 or the light scattering measuring device 17 at at least one location of the line body 10, and it is also preferable that the cleaning device is located after the processing device 11 or the light scattering measuring device 17. In the order of the line body 10, the cleaning device is preferably located immediately after the processing device 11 and the light scattering measuring device 17, and it is also preferable that it is located immediately before the processing device 11 and the light scattering measuring device 17. The line body 10 is preferably configured such that the cleaning device is located immediately before the processing device 11 or the light scattering measuring device 17 at at least one location of the line body 10, and it is also preferable that the cleaning device is located immediately after the processing device 11 or the light scattering measuring device 17.

[0105] The line body 10 includes a transport device 18. The transport device 18 is an element that transports the semiconductor substrate 1 between multiple devices of the line body 10. Preferably, the line body 10 includes multiple transport devices 18. The transport device 18 may be a robot arm or a manipulator.

[0106] The line body 10 includes a line control system 20. The line control system 20 performs various processes using a processor (e.g., CPU) and stores various data using memory (e.g., main memory, storage).

[0107] The line control system 20 includes a user interface. The user interface is an element that accepts operations from the operator and presents the results of the operator's operations. Preferably, the user interface includes an input device (e.g., a switch, a dial, a keyboard, a touchscreen). Preferably, the user interface includes a display device.

[0108] The line control system 20 preferably includes a transport control unit 21. The transport control unit 21 is an element that controls the transport device 18. The transport control unit 21 preferably controls the transport device 18 so that it transports the semiconductor substrate 1 in the order of the line body 10. When controlling the transport device 18, the transport control unit 21 may follow the operations accepted by the user interface.

[0109] The transport control unit 21 controls the transport device 18 based on the measurement values ​​obtained by the light scattering measuring device 17.

[0110] Preferably, the transport control unit 21 determines whether the measurement values ​​obtained by the light scattering measuring device 17 meet predetermined quality standards and controls the transport device 18 based on the determination result. The transport control unit 21 obtains either an acceptance judgment, which corresponds to the measurement values ​​meeting the quality standards, or a rejection judgment, which corresponds to the measurement values ​​not meeting the quality standards, as the determination result of the measurement values. The acceptance judgment and rejection judgment may be further subdivided. The transport control unit 21 may present the determination result via a user interface.

[0111] The quality standard is a criterion set for the measurement value obtained by the light scattering measuring device 17. The quality standard may be a single criterion, or it may be a combination of multiple criteria in a logical AND and / or logical OR relationship. The quality standard may include the condition that the measurement value is smaller than the standard value as a criterion for the measurement value. The transport control unit 21 may acquire the quality standard via the user interface.

[0112] The quality standard may include a standard set for a series of measurements obtained by the light scattering measuring device 17. The quality standard may include, as a standard set for a series of measurements, that the proportion of the series of measurements that is greater than the standard value is smaller than the standard proportion.

[0113] The quality standard may include criteria set for representative values ​​(e.g., mean, median, mode, maximum, minimum) of a series of measurements obtained by the light scattering measuring device 17. The quality standard may include, as a criterion set for representative values ​​of a series of measurements, that the representative values ​​of a series of measurements are smaller than a standard value.

[0114] The quality standard may include criteria for the statistical variability (e.g., variance, standard deviation, range, interquartile range) of a series of measurements obtained by the light scattering measuring device 17. The quality standard may include, as a criterion for the statistical variability of a series of measurements, that the statistical variability of a series of measurements is less than a standard value.

[0115] Preferably, the transport control unit 21 controls the transport device to transport the semiconductor substrate 1 in the order of the line body 10 if it obtains a pass judgment, and controls the transport device 18 to stop transporting the semiconductor substrate 1 in the order of the line body 10 if it obtains a fail judgment. When the transport control unit 21 controls the transport device 18 to stop transporting the semiconductor substrate in the order of the line body 10, it may also control the transport device 18 to transport the semiconductor substrate 1 to an area outside the line body 10, or it may stop the transport device 18.

[0116] If the line body 10 is configured to branch from the light scattering measuring device 17 to a plurality of processing devices 11 at at least one location on the line body 10, it is preferable that the transport control unit 21 applies a processing device scale to the measurement value obtained by the light scattering measuring device 17 and controls the transport device 18 to transport the semiconductor substrate 1 to the processing device 11 at the branching destination indicated by the application result. The transport control unit 21 may present the application result via a user interface.

[0117] The processing device scale is a scale that correlates the measured values ​​obtained by the light scattering measuring device 17 with the multiple processing devices 11 that are branch destinations. The processing device scale may be a single scale, or it may be a combination of multiple scales in a logical AND and / or logical OR relationship. The transport control unit 21 may obtain the processing device scale via the user interface.

[0118] The processing device scale may include a scale that uses a series of measurements obtained by the light scattering measuring device 17. The processing device scale may include a scale that uses the proportion of the interval between the series of measurements that is greater than a reference value.

[0119] The processing apparatus scale may include a scale that uses representative values ​​(e.g., mean, median, mode, maximum, minimum) of a series of measurements obtained by the light scattering measuring device 17.

[0120] The processing device scale may include a scale that uses the statistical variability (e.g., variance, standard deviation, range, interquartile range) of a series of measurements obtained by the light scattering measuring device 17.

[0121] The line control system 20 preferably includes a machining control unit 22. The machining control unit 22 is an element that controls the machining apparatus 11. When controlling the machining apparatus 11, the machining control unit 22 may follow the operations accepted by the user interface.

[0122] The processing control unit 22 controls the processing apparatus 11 based on the measurement values ​​obtained by the light scattering measuring device 17. The processing control unit 22 may control the processing apparatus 11 that are located before the light scattering measuring device 17 in the order of the main line 10, or it may control the processing apparatus 11 that are located after the light scattering measuring device 17 in the order of the main line 10.

[0123] When controlling a processing device 11 that is located before the light scattering measuring device 17 in the sequence of the main line 10, it is preferable that the processing control unit 22 evaluates whether the time-series data of the measured values ​​obtained by the light scattering measuring device 17 meets predetermined evaluation criteria and controls the processing device 11 based on the evaluation result. The processing control unit 22 obtains either a normal evaluation, which corresponds to the time-series data meeting the evaluation criteria, or an abnormal evaluation, which corresponds to the time-series data not meeting the evaluation criteria, as the evaluation result of the time-series data. The normal evaluation and abnormal evaluation may be further subdivided. The processing control unit 22 may present the evaluation result via a user interface.

[0124] The evaluation criteria for time-series data are criteria defined for the time change of the measured values ​​obtained by the light scattering measuring device 17. The evaluation criteria for time-series data may be a single criterion, or it may be a combination of multiple criteria in a logical AND and / or logical OR relationship. The evaluation criteria for time-series data may include criteria defined for the time change of the measured values, such as the increase in the measured value being less than a reference value, or the rate of increase of the measured value over time being less than a reference value. The transport control unit 21 may acquire the evaluation criteria for time-series data via the user interface.

[0125] The evaluation criteria for time-series data may include criteria established for the time evolution of a series of measurements obtained by the light scattering measuring device 17. The evaluation criteria for time-series data may include criteria established for the time evolution of a series of measurements, such as the increase in the proportion of the series of measurements that are greater than a reference value being smaller than the reference value, or the time increase rate of the proportion being smaller than the reference value.

[0126] The evaluation criteria for time series data may include criteria defined for the time change of representative values ​​(e.g., mean, median, mode, maximum, minimum) of a series of measurements obtained by the light scattering measuring device 17. The evaluation criteria for time series data may include criteria defined for the time change of representative values ​​of a series of measurements, such as the increase in the representative values ​​of a series of measurements being smaller than a reference value, or the time increase rate of the representative values ​​of a series of measurements being smaller than a reference value.

[0127] The evaluation criteria for time series data may include criteria defined for the time evolution of the statistical variability (e.g., variance, standard deviation, range, interquartile range) of a series of measurements obtained by the light scattering measuring device 17. The evaluation criteria for time series data may include criteria defined for the time evolution of the statistical variability of a series of measurements, such as the increase in the statistical variability of a series of measurements being smaller than a standard value, or the rate of increase over time of the statistical variability of a series of measurements being smaller than a standard value.

[0128] The processing control unit 22 may use the time-series data of the judgment results obtained by the transport control unit 21 as the time-series data of the measured values ​​obtained by the light scattering measuring device 17. The evaluation criteria for the time-series data may include criteria set for the time change in the rate of failure judgments obtained by the transport control unit 21. The rate of failure judgments may be the rate of failure at a predetermined time, or the rate of failure at a predetermined number of judgment results. The evaluation criteria for the time-series data may include criteria set for the time change in the rate of failure judgments, such as the increase in the rate of failure judgments being less than a standard value, or the rate of increase in the rate of failure judgments being less than a standard value.

[0129] Preferably, the processing control unit 22 controls the processing device 11 so as not to change the processing conditions when a normal evaluation is obtained, and controls the processing device 11 to change the processing conditions when an abnormal evaluation is obtained.

[0130] When controlling a processing device 11 that is located after the light scattering measuring device 17 in the sequence of the main line 10, it is preferable for the processing control unit 22 to apply a processing condition scale to the measurement value obtained by the light scattering measuring device 17 and control the processing device 11 so that the processing conditions are as indicated by the application result. The processing control unit 22 may present the application result via a user interface.

[0131] The processing condition scale is a scale that correlates the measured values ​​obtained by the light scattering measuring device 17 with the processing conditions of the processing device 11. The processing condition scale may be a single scale, or it may be a combination of multiple scales in a logical AND and / or logical OR relationship. The processing control unit 22 may obtain the processing condition scale via a user interface.

[0132] The processing condition scale may include a scale that uses a series of measurements obtained by the light scattering measuring device 17. The processing condition scale may include a scale that uses the proportion of the interval between the series of measurements that is greater than a reference value.

[0133] The processing condition scale may include a scale that uses representative values ​​(e.g., mean, median, mode, maximum, minimum) of a series of measurements obtained by the light scattering measuring device 17.

[0134] The processing condition scale may include a scale that uses the statistical variability (e.g., variance, standard deviation, range, interquartile range) of a series of measurements obtained by the light scattering measuring device 17.

[0135] Among the slicing devices 12, the processing conditions for the wire source slicing device include the slicing speed, wire tension, type of abrasive grain (e.g., grain size of the abrasive grain), feed rate, coolant flow rate, and coolant temperature. Among the slicing devices 12, the processing conditions for the laser slicing device include the laser output, laser wavelength, laser pulse width, laser pulse rate, laser beam intensity profile, laser beam size, focal length, scanning speed, laser gas flow rate, and laser gas type.

[0136] Among the grinding / lapping apparatus 13, the processing conditions for the grinding apparatus include grinding pressure, rotational speed of the grinding disc, rotational speed of the substrate holder, type of grinding disc (e.g., grit size of fixed abrasive grains), grinding time, ambient temperature, flow rate of coolant, and temperature of the coolant. The processing conditions for the grinding apparatus also include the amount of grinding determined from multiple processing conditions.

[0137] Among the grinding / lapping apparatus 13, the processing conditions for the lapping apparatus include lapping pressure, rotational speed of the lapping pad, type of lapping pad (e.g., hardness), rotational speed of the substrate holder, relative motion pattern of the lapping pad and substrate holder, type of lapping slurry (e.g., particle size, concentration, chemical composition of free abrasive particles), flow rate of the lapping slurry, lapping time, ambient temperature, flow rate of the coolant, and temperature of the coolant. The lapping amount, determined from multiple processing conditions, is also a processing condition for the lapping apparatus.

[0138] Among the polishing apparatus 14, the processing conditions for the mechanical polishing apparatus include polishing pressure, rotational speed of the polishing pad, type of polishing pad (e.g., hardness), rotational speed of the substrate holder, relative motion pattern of the polishing pad and substrate holder, polishing time, ambient temperature, flow rate of the coolant, and temperature of the coolant. The processing conditions for the mechanical polishing apparatus also include the amount of polishing determined from multiple processing conditions.

[0139] Among the polishing apparatus 14, the processing conditions for the chemical mechanical polishing apparatus include polishing pressure, rotational speed of the polishing pad, type of polishing pad (e.g., hardness), rotational speed of the substrate holder, relative motion pattern of the polishing pad and substrate holder, type of polishing slurry (e.g., particle size, concentration, chemical composition of free abrasive particles), flow rate of the polishing slurry, polishing time, ambient temperature, flow rate of the coolant, and temperature of the coolant. The processing conditions for the chemical mechanical polishing apparatus also include the amount of polishing determined from multiple processing conditions.

[0140] The processing conditions for the etching apparatus 15 include the etching amount. The processing conditions for the growth apparatus 16 include the growth amount.

[0141] This disclosure further provides a manufacturing method Y as an embodiment. Figures 4 to 9 illustrate this embodiment.

[0142] The processes included in manufacturing method Y may be performed by components included in line X, or by components having equivalent functions. Manufacturing method Y may be performed by line X, or by manufacturing equipment having equivalent functions to line X.

[0143] Manufacturing method Y is a method for manufacturing a semiconductor substrate 1. The material of the semiconductor substrate 1 may be an elemental semiconductor (for example, Si (silicon), Ge (germanium), Se (selenium)) or a compound semiconductor (for example, GaAs (gallium arsenide), InGaAs (indium gallium arsenide), InN (indium nitride), ZnO (zinc oxide)). The material of the semiconductor substrate 1 may be a power semiconductor material (for example, SiC (silicon carbide), GaN (gallium nitride), AlN (aluminum nitride), Ga2O3 (gallium(III) oxide), sapphire). The semiconductor substrate 1 is preferably a SiC substrate.

[0144] The manufacturing method Y includes a processing step S100 (see Figure 4). The processing step S100 is a process for processing the semiconductor substrate 1. Preferably, the manufacturing method Y includes a plurality of processing steps S100. The processing step S100 may be any process for processing the semiconductor substrate 1. The processing step S100 may be a process for processing the semiconductor substrate 1 in a complex process.

[0145] The processing step S100 may be a slicing step S110 in which the semiconductor ingot is sliced ​​to form a semiconductor substrate 1. The slicing step S110 may be a wire saw slicing step in which the semiconductor ingot is sliced ​​with a wire saw, or it may be a laser slicing step in which the semiconductor substrate 1 is peeled off by damaging the semiconductor ingot with a laser.

[0146] The processing step S100 may be a planarization step that flattens the semiconductor substrate 1. The planarization step may be a grinding / lapping step S120 that grinds and / or laps the semiconductor substrate 1, or a polishing step S130 that polishes the semiconductor substrate 1 to a mirror finish. The grinding / lapping step S120 may be a grinding step or a lapping step. The grinding / lapping step S120 may be performed twice, with the first grinding / lapping step S120 being a grinding step and the second grinding / lapping step S120 being a lapping step. The polishing step S130 may be a mechanical polishing step that mechanically polishes the semiconductor substrate 1, or a chemical mechanical polishing step that mechanically and chemically polishes the semiconductor substrate 1. The polishing process S130 is performed twice, the first polishing process S130 being a mechanical polishing process, and the second polishing process S130 being a chemical mechanical polishing process.

[0147] The processing step S100 may be an etching step S140 for etching the semiconductor substrate 1. The etching step S140 may be a wet etching step in which the semiconductor substrate 1 is chemically etched with a liquid, a dry etching step (for example, a plasma etching step or a gas etching step) in which the semiconductor substrate 1 is chemically etched with a gas, or a thermal sublimation etching step in which the semiconductor substrate 1 is etched by thermal sublimation.

[0148] The processing step S100 may be a growth step S150 for growing the semiconductor substrate 1. The growth step S150 may be a vapor phase growth step (for example, a chemical vapor phase growth step or a physical vapor phase growth step) for growing the semiconductor substrate 1 in a gas phase environment, a liquid phase growth step for growing the semiconductor substrate 1 in a liquid phase environment, or a molecular beam growth step for growing the semiconductor substrate 1 by supplying raw materials with a molecular beam.

[0149] It is preferable that the slicing process S110 is performed before the grinding / lapping process S120, the polishing process S130, the etching process S140, and the growth process S150. It is preferable that the grinding / lapping process S120 is performed after the slicing process S110 and before the polishing process S130, the etching process S140, and the growth process S150. It is preferable that the polishing process S130 is performed after the slicing process S110 and the grinding / lapping process S120 and before the etching process S140 and the growth process S150. It is preferable that the etching process S140 is performed after the slicing process S110, the grinding / lapping process S120, the polishing process S130, and before the growth process S150. The growth process S150 is preferably performed after the slicing process S110, grinding / lapping process S120, polishing process S130, and etching process S140 (see Figure 6).

[0150] The manufacturing method Y includes a light scattering measurement step S200. The light scattering measurement step S200 is a step of obtaining a measurement value of the intensity of scattered light from the semiconductor substrate 1 by light scattering. Preferably, the light scattering measurement step S200 includes obtaining a series of measurement values ​​of the intensity of scattered light from the entire surface of the semiconductor substrate 1. When the light scattering measurement step S200 is performed by a light scattering measurement device 17, it is preferable that the light scattering measurement device 17 performs a plurality of light scattering measurement steps S200.

[0151] The steps included in the light scattering measurement step S200 may be performed by components included in the light scattering measuring device 17, or by components having equivalent functions to those components. The light scattering measurement step S200 may be performed by the light scattering measuring device 17, or by a measuring device having equivalent functions to the light scattering measuring device 17.

[0152] The light scattering measurement step S200 includes the measurement step S210. The measurement step S210 is a step of acquiring the signal value of the photomultiplier tube 17121 and obtaining a measurement value based on the acquired signal value.

[0153] The measurement step S210 includes an acquisition step S211. The acquisition step S211 is a step of controlling the optical system 17100 to acquire the signal value of the photomultiplier tube 17121. Preferably, the acquisition step S211 is performed by the signal acquisition unit 17210. The acquisition step S211 may include following the operations accepted by the user interface when controlling the optical system 17100. The acquisition step S211 may include acquiring a series of signal values ​​of the photomultiplier tube 17121. The acquisition step S211 may include acquiring multiple signal values ​​for the continuous output of the photomultiplier tube 17121 as a series of signal values ​​of the photomultiplier tube 17121.

[0154] The acquisition step S211 includes projecting incident light L1 onto the semiconductor substrate 1. Preferably, the acquisition step S211 includes projecting incident light L1 onto the semiconductor substrate 1 by a light projection unit 17110 controlled by a signal acquisition unit 17210.

[0155] The acquisition step S211 includes generating incident light L1 when projecting the incident light L1 onto the semiconductor substrate 1. Preferably, the acquisition step S211 includes the light source 17111 generating the incident light L1. The acquisition step S211 may include adjusting the intensity of the incident light L1. Preferably, when adjusting the intensity of the incident light L1 in the acquisition step S211, the signal acquisition unit 17210 adjusts the output of the light source 17111.

[0156] The acquisition step S211 includes selectively transmitting light of a specific wavelength in the incident light L1 when projecting incident light L1 onto the semiconductor substrate 1. Preferably, the acquisition step S211 includes the wavelength filter 17112 selectively transmitting light of a specific wavelength in the incident light L1.

[0157] The acquisition step S211 includes emitting incident light L1 onto the semiconductor substrate 1 and making the incident light L1 light with a specific polarization direction. Preferably, the polarization control element 17113 includes making the incident light L1 light with a specific polarization direction. The acquisition step S211 may include adjusting the polarization direction of the incident light L1. Preferably, the acquisition step S211 includes adjusting the polarization control element 17113 when adjusting the polarization direction of the incident light L1. If the polarization control element 17113 is a half-wave plate, it is preferable that the acquisition step S211 includes controlling the installation position of the half-wave plate and adding or removing the half-wave plate from the optical path of the incident light L1 when adjusting the polarization direction of the incident light L1. If the polarization control element 17113 is a polarizing filter, it is preferable that the acquisition step S211 includes adjusting the installation angle of the polarizing filter when adjusting the polarization direction of the incident light L1.

[0158] The acquisition step S211 preferably includes receiving scattered light L2 from a relatively shallow region inside the semiconductor substrate 1 by making the incident light L1 S-polarized. The acquisition step S211 also preferably includes receiving scattered light L2 from a relatively deep region inside the semiconductor substrate 1 by making the incident light L1 P-polarized. When the incident light L1 is P-polarized, the acquisition step S211 preferably includes setting the incident angle θ to the Brewster angle or an angle near it (for example, ±10°).

[0159] The acquisition step S211 includes focusing the incident light L1 onto the semiconductor substrate 1 when projecting the incident light L1 onto the semiconductor substrate 1. Preferably, the acquisition step S211 includes focusing the incident light L1 onto the semiconductor substrate 1 using a focusing lens 17114.

[0160] The acquisition step S211 includes receiving scattered light L2 from the semiconductor substrate 1. Preferably, the acquisition step S211 includes the receiving unit 17120 controlled by the signal acquisition unit 17210 receiving scattered light L2 from the semiconductor substrate 1. Preferably, when receiving scattered light L2 in the acquisition step S211, the acquisition step S211 includes receiving elastic scattered light.

[0161] The acquisition step S211 includes receiving scattered light L2 from the semiconductor substrate 1 and imaging the scattered light L2 onto the photomultiplier tube 17121. Preferably, the acquisition step S211 includes imaging the scattered light L2 onto the photomultiplier tube 17121 using an imaging lens 17123 and an objective lens 17124.

[0162] The acquisition step S211 includes receiving scattered light L2 from the semiconductor substrate 1 and selectively allowing light from a specific direction to pass through the scattered light L2. Preferably, the acquisition step S211 includes the slit 17122 selectively allowing light from a specific direction to pass through the scattered light L2.

[0163] The acquisition process S211 includes the photomultiplier tube 17121 converting scattered light L2 into a signal when receiving scattered light L2 from the semiconductor substrate 1.

[0164] The acquisition step S211 may include adjusting the measurement position on the semiconductor substrate 1. Preferably, when adjusting the measurement position on the semiconductor substrate 1 in the acquisition step S211, the signal acquisition unit 17210 adjusts the installation position of the light emission unit 17110 and the light receiving unit 17120 and / or the installation position of the semiconductor substrate 1.

[0165] The acquisition step S211 may include adjusting the incident angle θ of the projected incident light L1 within a range of 0° or more and 90° or less. When adjusting the incident angle θ in the acquisition step S211, it is preferable that the signal acquisition unit 17210 adjusts the installation angle of the light projection unit 17110. The acquisition step S211 may include adjusting the incident angle θ within a range of 40° or more, 45° or more, or 50° or more. The acquisition step S211 may include adjusting the incident angle θ within a range of 80° or less, 75° or less, or 70° or less.

[0166] The acquisition step S211 may include adjusting the scattering angle φ of the received scattered light L2 within a range of 0° or more and 90° or less. When adjusting the scattering angle φ, it is preferable that the signal acquisition unit 17210 adjusts the installation angle of the light receiving unit 17120. The acquisition step S211 may include adjusting the scattering angle φ within a range of 20° or more, 25° or more, or 30° or more. The acquisition step S211 may include adjusting the scattering angle φ within a range of 70° or less, 65° or less, or 60° or less. When adjusting the scattering angle φ, it is preferable that the acquisition step S211 does not use the scattering angle φ as the reflection angle.

[0167] The measurement step S210 includes a gain determination step S212. The gain determination step S212 is a step to determine the gain of the photomultiplier tube 17121 at the time of acquisition step S211. Preferably, the gain determination step S212 is performed by the voltage control unit 17230. The gain determined in the gain determination step S212 may be the gain of the photomultiplier tube 17121, which is defined as the photoelectron multiplication factor, or it may be a relative value of the gain of the photomultiplier tube 17121.

[0168] The gain determination step S212 includes determining the gain at the time of acquisition step S211 by using dependency data between the applied voltage value and gain at the photomultiplier tube 17121 to calculate the gain corresponding to the applied voltage value at the time of acquisition step S211, and setting the calculated gain as the gain at the time of acquisition step S211. One of the dependency data between the applied voltage value and gain may be a dataset of applied voltage values ​​and gain, or a relational expression between the applied voltage value and gain. One of the dependency data between the applied voltage value and gain may be specification data for the photomultiplier tube 17121. When using the dependency data between the applied voltage value and gain, the gain determination step S212 may include creating the dependency data between the applied voltage value and gain, or it may include acquiring the dependency data between the applied voltage value and gain via a user interface. The applied voltage value may be the voltage value directly applied to the photomultiplier tube 17121, or it may be the voltage value controlling the voltage directly applied to the photomultiplier tube 17121.

[0169] The measurement step S210 includes a conversion step S213. The conversion step S213 is a step of obtaining a measurement value from the signal value acquired in the acquisition step S211. The conversion step S213 is preferably performed by the output unit 17240. When obtaining the measurement value in the conversion step S213, the measurement value may be presented via a user interface.

[0170] The conversion step S213 preferably includes calibrating the signal value acquired in the acquisition step S211 in order to obtain a measured value. The conversion step S213 preferably includes calculating a calibration factor and dividing the signal value by the calibration factor when calibrating the signal value. Here, the calibration factor is the ratio of the signal value of the photomultiplier tube 17121 at the time of calibration to the signal value of the photomultiplier tube 17121 at the time of reference. The conversion step S213 preferably includes using calibration data that includes the signal value at the time of reference and the signal value at the time of calibration when calculating the calibration factor. The conversion step S213 may include creating calibration data when using calibration data, or it may include acquiring calibration data via a user interface.

[0171] The conversion step S213 includes obtaining a measured value by dividing the signal value acquired in the acquisition step S211 by the gain at the time of acquisition step S211, which was determined in the gain determination step S212. If the signal value acquired in the acquisition step S211 is calibrated, the conversion step S213 includes using the calibrated signal value when dividing the signal value by the gain at the time of acquisition step S211.

[0172] The light scattering measurement step S200 includes a preliminary measurement step S220. The preliminary measurement step S220 is a step of setting the applied voltage value of the photomultiplier tube 17121.

[0173] The preliminary measurement step S220 includes the acquisition step S221. The acquisition step S221 may be the same as that of the acquisition step S211.

[0174] The preliminary measurement step S220 includes a signal value evaluation step S222. The signal value evaluation step S222 is a step of evaluating the magnitude of the signal values ​​acquired in the acquisition step S221 to obtain a signal value evaluation result. Preferably, the signal value evaluation step S222 is performed by the signal evaluation unit 17220.

[0175] The signal value evaluation step S222 includes obtaining, as a result of the signal value evaluation, one of the following: an overvalue evaluation corresponding to a large signal value, an undervalue evaluation corresponding to a small signal value, or an appropriate value evaluation corresponding to an appropriate signal value. The overvalue evaluation, undervalue evaluation, and appropriate value evaluation may be further subdivided.

[0176] If the signal values ​​acquired in acquisition step S211 are a series of signal values, the signal value evaluation step S222 may consider representative values ​​of the series of signal values ​​(e.g., mean, median, maximum, minimum) as the signal values ​​acquired in acquisition step S211 when evaluating the magnitude of the signal values. If the signal values ​​acquired in acquisition step S211 are a series of signal values, the signal value evaluation step S222 may include using an overvalue ratio, which is the ratio of the number of signal values ​​corresponding to an overvalue evaluation; an undervalue ratio, which is the ratio of the number of signal values ​​corresponding to an undervalue evaluation; and an appropriate value ratio, which is the ratio of the number of signal values ​​corresponding to an appropriate value evaluation. The signal value evaluation step S222 may include setting an overvalue target ratio and an undervalue target ratio, obtaining an overvalue evaluation if the overvalue ratio is higher than the overvalue target ratio, obtaining an undervalue evaluation if the undervalue ratio is higher than the undervalue target ratio, and obtaining an appropriate value evaluation if the overvalue ratio is lower than the overvalue target ratio and the undervalue ratio is lower than the undervalue target ratio. The signal value evaluation step S222 may also include setting an appropriate value target ratio, obtaining an overvalue evaluation or an undervalue evaluation if the appropriate value ratio is lower than the appropriate value target ratio, and obtaining an appropriate value evaluation if the appropriate value ratio is higher than the appropriate value target ratio. In setting the overvalue target ratio, undervalue target ratio and appropriate value target ratio, the signal value evaluation step S222 may include following operations accepted by the user interface.

[0177] The signal value evaluation step S222 may include setting an output target range for the photomultiplier tube 17121 as a reference when evaluating the magnitude of the signal value. The signal value evaluation step S222 may include making the output target range narrower than the output range of the photomultiplier tube 17121 when setting the output target range. Preferably, the signal value evaluation step S222 may include making the upper limit of the output target range smaller than the upper limit of the output range, and making the lower limit of the output target range larger than the lower limit of the output range when setting the output target range. The signal value evaluation step S222 may include following the operation accepted by the user interface when setting the output target range. The signal value evaluation step S222 may include obtaining an overvalue evaluation if the signal value is greater than the upper limit of the output target range, obtaining an undervalue evaluation if the signal value is smaller than the lower limit of the output target range, and obtaining an appropriate value evaluation if the signal value is within the output target range.

[0178] The preliminary measurement step S220 includes a setting step S223. The setting step S223 is a step of setting the applied voltage value based on the evaluation result obtained in the signal value evaluation step S222. The setting step S223 is preferably performed by the voltage control unit 17230. In setting the applied voltage value in the setting step S223, the applied voltage value may be selected from stepped values ​​or selected from continuous values.

[0179] The setting step S223 preferably includes changing the applied voltage value to a negative value if an overvalue evaluation is obtained, and changing the applied voltage value to a positive value if an undervalue evaluation is obtained. The setting step S223 preferably includes maintaining the applied voltage value if an appropriate value evaluation is obtained, but it may also include changing the applied voltage value. When selecting the applied voltage value from stepped values, the setting step S223 may include changing the applied voltage value by one step, or by two or more steps. When selecting the applied voltage value from continuous values, the setting step S223 may include setting the amount or rate of change of the applied voltage value. When setting the amount or rate of change, the setting step S223 may include using a constant amount or rate of change, selecting a constant amount or rate of change from a plurality of candidates, or calculating the amount or rate of change.

[0180] The setting step S223 may include determining the target gain of the photomultiplier tube 17121 from the gain at the time of acquisition step S221, and calculating the applied voltage value corresponding to the target gain using the dependence data between the applied voltage value and the gain. Here, the target gain is a gain that conforms to the condition that a signal value equivalent to the appropriate value evaluation is acquired in acquisition step S221. Preferably, the setting step S223 includes calculating the gain at the time of acquisition step S221 by performing the same process as the gain determination step S212, calculating a correction multiplier to make the signal value acquired in acquisition step S221 a signal value equivalent to the appropriate value evaluation, and setting the target gain to be the gain at the time of acquisition step S221 multiplied by the correction multiplier.

[0181] The light scattering measurement step S200 may include a preparation step S230. The preparation step S230 is a step of preparing data on the dependence of the applied voltage value and the gain and / or calibration data.

[0182] Preparation step S230 includes a plurality of acquisition steps S231. Acquisition steps S231 may be the same as acquisition steps S211 and S221.

[0183] Preparation step S230 may include signal value evaluation step S232. Signal value evaluation step S232 may be the same as signal value evaluation step S222.

[0184] Preparation step S230 includes signal data set creation step S233. Signal data set creation step S233 is a step of creating signal data and making the created signal data one of the signal data sets. Here, a signal data set is a collection of signal data, and the signal data includes the signal value acquired in acquisition step S231 and the applied voltage value at the time of acquisition step S231. It is preferable that the signal data set creation step S233 is performed by the storage unit 17250.

[0185] The signal dataset creation step S233 may include, if an overvaluation or undervaluation is obtained in the signal value evaluation step S232, not including the signal data containing the signal value evaluated in the signal value evaluation step S232 as one of the signal datasets.

[0186] The signal dataset creation step S233 may include, when creating the signal data, a target label characterizing the semiconductor substrate 1 in the created data. The signal dataset creation step S233 may include, when creating the signal data, an optical system label characterizing the optical system 17100 in the signal data. The signal dataset creation step S233 may also include, when creating the signal data, determining the target label and the optical system label, and may also include obtaining the target label and the optical system label via a user interface.

[0187] If the signal values ​​acquired in acquisition step S231 are a series of signal values, the signal data set creation step S233 includes considering representative values ​​of the series of signal values ​​(e.g., mean, median, maximum, minimum) as the signal values ​​acquired in acquisition step S231 when creating the signal data. If the signal values ​​acquired in acquisition step S231 are a series of signal values, the signal data set creation step S233 may include including the series of signal values ​​in the signal data when creating the signal data.

[0188] Preparation step S230 includes dependency data creation step S234. Dependency data creation step S234 is a step of creating dependency data between applied voltage value and gain using the signal dataset created in signal dataset creation step S233. Dependency data creation step S234 is preferably performed by the storage unit 17250.

[0189] The dependency data creation step S234 includes calculating the relative gain of the photomultiplier tube 17121 and adding the calculated relative gain to the signal data set. When calculating the relative gain, the dependency data creation step S234 includes calculating the relative signal value and using the calculated relative signal value as the relative gain. When calculating the relative signal value, the dependency data creation step S234 may include determining a reference applied voltage value and using the signal value included in the signal data including the reference applied voltage value as the reference for the relative value. If the signal data includes a target label, the dependency data creation step S234 may include determining a reference target label and using the signal value included in the signal data including the reference applied voltage value and the reference target label as the reference for the relative value. If the signal data includes an optical system label, the dependency data creation step S234 includes calculating the relative signal value for each optical system label.

[0190] The dependency data creation step S234 may include using the signal dataset with the relative gain added as one of the dependency data between the applied voltage value and the gain. The dependency data creation step S234 may also include performing regression analysis on the signal dataset with the relative gain added to estimate a relational expression, and using the estimated relational expression as one of the dependency data between the applied voltage value and the gain. When performing regression analysis in the dependency data creation step S234, it is preferable to use a log-log equation (for example, a log-log linear equation, a log-log higher-order equation) as the model for the relational expression. If the signal data includes optical system labels, the dependency data creation step S234 includes creating dependency data between the applied voltage value and the gain for each optical system label.

[0191] Preparation step S230 may include calibration data creation step S235. Calibration data creation step S235 is a step of creating calibration data using the signal dataset created in signal dataset creation step S233. Preferably, the calibration data creation step S235 is performed by the storage unit 17250.

[0192] The calibration data creation step S235 may include using the signal dataset as is as one of the calibration data. If the signal data includes an optical system label, the calibration data creation step S235 includes determining a reference optical system label and using the signal value included in the signal data including the reference optical system label as the signal value at the reference time when using the signal dataset as is as calibration data. If the signal data includes a target label, the calibration data creation step S235 may include determining a reference applied voltage value and using the signal value included in the signal data including the reference applied voltage value and the reference optical system label as the signal value at the reference time when using the signal dataset as is as calibration data.

[0193] The light scattering measurement step S200 may be a method for performing the measurement step S210 (see Figure 5).

[0194] The light scattering measurement step S200 may be a method in which the preliminary measurement step S220 and the main measurement step S210 are performed in this order (see Figure 6). When performing the preliminary measurement step S220 in the light scattering measurement step S200, it is preferable to perform the preliminary measurement step S220 multiple times until an appropriate value evaluation is obtained in the signal value evaluation step S222. When performing the main measurement step S210 in the light scattering measurement step S200, it is preferable to perform the gain determination step S212 and the conversion step S213, but it is also possible to omit the gain determination step S212 and the conversion step S213 and use the signal value obtained in the acquisition step S211 as the measured value.

[0195] The light scattering measurement step S200 may be a method in which the preparation step S230 and the main measurement step S210 are performed in this order (see Figure 7). The light scattering measurement step S200 may be a method in which the preparation step S230, the preliminary measurement step S220 and the main measurement step S210 are performed in this order. When performing the preliminary measurement step S220 in the light scattering measurement step S200, it is preferable to perform the preliminary measurement step S220 multiple times until an appropriate value evaluation is obtained in the signal value evaluation step S222. When performing the main measurement step S210 in the light scattering measurement step S200, it is preferable to perform the gain determination step S212 and the conversion step S213, but it is also possible to omit the gain determination step S212 and the conversion step S213 and use the signal value obtained in the acquisition step S211 as the measured value.

[0196] The light scattering measurement step S200 is preferably performed after the processing step S100, and it is also preferable that it be performed before the processing step S100. It is preferable that one or more processing steps S100 and the light scattering measurement step S200 are performed in a cyclical manner.

[0197] In the preceding and succeeding light scattering measurement steps S200, it is preferable that the gain of the photomultiplier tube 17121 in the acquisition step S211 of the subsequent light scattering measurement step S200 is equal to or greater than the gain of the photomultiplier tube 17121 in the acquisition step S211 of the subsequent light scattering measurement step S200. If the light scattering measurement apparatus 17 performing the preceding and succeeding light scattering measurement steps S200 is the same apparatus, it is preferable that the voltage applied to the photomultiplier tube 17121 in the subsequent light scattering measurement step S200 is equal to or greater than the voltage applied to the photomultiplier tube 17121 in the preceding light scattering measurement step S200.

[0198] The manufacturing method Y may include quality evaluation steps other than the light scattering measurement step S200. The manufacturing method Y may include dimensional measurement steps (e.g., thickness measurement step, surface texture measurement step, warpage measurement step), surface detection steps (e.g., surface defect detection step, particle detection step), composition measurement steps (e.g., crystal structure measurement step, impurity measurement step, dopant measurement step), electrical property measurement steps (e.g., electrical resistivity measurement step, carrier concentration measurement step), and thermal property measurement steps (e.g., thermal conductivity measurement step).

[0199] The manufacturing method Y preferably includes a cleaning step. The cleaning step is a step of cleaning the semiconductor substrate 1. The cleaning step may be a wet cleaning step (e.g., RCA cleaning step, acid cleaning step, alkaline cleaning step) in which the semiconductor substrate 1 is chemically cleaned with a liquid, a dry cleaning step (e.g., gas cleaning step, plasma cleaning step) in which the semiconductor substrate 1 is chemically cleaned with a gas, or a physical cleaning step (e.g., brush cleaning step, ultrasonic cleaning step, pure water cleaning step) in which the semiconductor substrate 1 is physically cleaned. The cleaning step may be an etching step in which the semiconductor substrate 1 is etched. The cleaning step may be a wet etching step in which the semiconductor substrate 1 is chemically etched with a liquid, a dry etching step (e.g., plasma etching step, gas etching step) in which the semiconductor substrate 1 is chemically etched with a gas, or a thermal sublimation etching step in which the semiconductor substrate 1 is etched by thermal sublimation.

[0200] The cleaning process is preferably performed after the processing process S100 and the light scattering measurement process S200, and is also preferably performed before the processing process S100 and the light scattering measurement process S200. The cleaning process is preferably performed immediately after the processing process S100 and the light scattering measurement process S200, and is also preferably performed immediately before the processing process S100 and the light scattering measurement process S200.

[0201] The manufacturing method Y preferably includes a quality determination step S300. The quality determination step S300 is a step in which a determination result regarding the quality of the semiconductor substrate 1 is obtained.

[0202] The quality determination step S300 preferably includes determining whether the measured value obtained in the light scattering measurement step S200 meets a predetermined quality standard. The quality determination step S300 includes obtaining either an acceptance judgment, which corresponds to the measured value meeting the quality standard, or a rejection judgment, which corresponds to the measured value not meeting the quality standard, as the result of the measurement value determination. The acceptance judgment and the rejection judgment may be further subdivided.

[0203] The quality standard is a criterion set for the measurement value obtained in the light scattering measurement process S200. The quality standard may be a single criterion, or it may be a combination of multiple criteria in a logical AND and / or logical OR relationship. The quality standard may include the condition that the measurement value is smaller than the standard value.

[0204] The quality standard may include a standard set for a series of measurements obtained in the light scattering measurement process S200. The quality standard may include, as a standard set for a series of measurements, that the proportion of the series of measurements that are greater than the standard value is smaller than the standard proportion.

[0205] The quality standard may include a criterion set for representative values ​​(e.g., mean, median, mode, maximum, minimum) of a series of measurements obtained in the light scattering measurement process S200. The quality standard may include, as a criterion set for representative values ​​of a series of measurements, that the representative values ​​of the series of measurements are smaller than a reference value.

[0206] The quality criteria may include standards set for the statistical variability (e.g., variance, standard deviation, range, interquartile range) of a series of measurements obtained in the light scattering measurement process S200. The quality criteria may include, as standards set for the statistical variability of a series of measurements, that the statistical variability of a series of measurements is less than a standard value.

[0207] The manufacturing method Y preferably includes a processing selection step S400. The processing selection step S400 is a step of selecting a processing step S100 to be performed after the light scattering measurement step S200.

[0208] The processing selection step S400 preferably includes applying a processing scale to the measurement value obtained in the light scattering measurement step S200 and selecting the processing step S100 indicated by the application result.

[0209] The processing step scale is a scale that correlates the measured values ​​obtained in the light scattering measurement step S200 with the multiple processing steps S100. The processing step scale may be a single scale, or it may be a combination of multiple scales in a logical AND and / or logical OR relationship.

[0210] The processing step scale may include a scale that uses a series of measurements obtained in the light scattering measurement step S200. The processing step scale may include a scale that uses the proportion of the interval between the series of measurements that is greater than a reference value.

[0211] The processing step scale may include a scale that uses representative values ​​(e.g., mean, median, mode, maximum, minimum) of a series of measurements obtained in the light scattering measurement step S200.

[0212] The processing step scale may include a scale that uses the statistical variability (e.g., variance, standard deviation, range, interquartile range) of a series of measurements obtained in the light scattering measurement step S200.

[0213] The manufacturing method Y may include a transport step. The transport step is a step of transporting the semiconductor substrate 1. Preferably, the transport step includes transporting the semiconductor substrate 1 along the main line 10.

[0214] The transport process preferably includes transporting the semiconductor substrate 1 based on the measurement value obtained in the light scattering measurement process S200. The transport process preferably includes transporting the semiconductor substrate 1 based on the judgment result obtained in the quality judgment process S300. The transport process preferably includes continuing to transport the semiconductor substrate 1 if an acceptance judgment is obtained in the quality judgment process S300, and stopping the transport of the semiconductor substrate 1 if an acceptance judgment is obtained in the quality judgment process S300.

[0215] The transport process preferably includes transporting the semiconductor substrate 1 based on the selection made in the processing selection process S400.

[0216] The manufacturing method Y preferably includes a processing condition change step S500. The processing condition change step S500 is a step in which the processing conditions in processing step S100 are changed.

[0217] The processing condition change step S500 preferably includes changing the processing conditions in the processing step S100 based on the measurement values ​​obtained in the light scattering measurement step S200.

[0218] The processing condition change step S500 preferably includes a processing evaluation step S510. The processing evaluation step S510 is a step to obtain evaluation results for the processing step S100 performed before the light scattering measurement step S200. The processing condition change step S500 preferably includes changing the processing conditions in the processing step S100 based on the evaluation results obtained in the processing evaluation step S510.

[0219] The processing evaluation step S510 preferably includes evaluating whether the time-series data of the measured values ​​obtained in the light scattering measurement step S200 meets predetermined evaluation criteria. The processing evaluation step S510 includes obtaining either a normal evaluation, which corresponds to the time-series data meeting the evaluation criteria, or an abnormal evaluation, which corresponds to the time-series data not meeting the evaluation criteria, as the evaluation result of the time-series data. The normal evaluation and abnormal evaluation may be further subdivided.

[0220] The evaluation criteria for time-series data are criteria defined for the time change of the measured values ​​obtained in the light scattering measurement process S200. The evaluation criteria for time-series data may be a single criterion, or it may be a combination of multiple criteria in a logical AND and / or logical OR relationship. The evaluation criteria for time-series data, as criteria defined for the time change of the measured values, may include the increase in the measured value being less than the reference value, or the rate of increase of the measured value over time being less than the reference value.

[0221] The evaluation criteria for time-series data may include criteria established for the time evolution of a series of measurements obtained in the light scattering measurement process S200. The evaluation criteria for time-series data may include criteria established for the time evolution of a series of measurements such that the increase in the proportion of the series of measurements that are greater than the reference value is smaller than the reference value, or the time increase rate of the proportion is smaller than the reference value.

[0222] The evaluation criteria for time series data may include criteria defined for the time change of representative values ​​(e.g., mean, median, mode, maximum, minimum) of a series of measurements obtained in the light scattering measurement process S200. The evaluation criteria for time series data may include criteria defined for the time change of representative values ​​of a series of measurements, such as the increase in the representative values ​​of a series of measurements being smaller than a reference value, or the time increase rate of representative values ​​of a series of measurements being smaller than a reference value.

[0223] The evaluation criteria for time series data may include criteria defined for the time evolution of the statistical variability (e.g., variance, standard deviation, range, interquartile range) of a series of measurements obtained in the light scattering measurement process S200. The evaluation criteria for time series data may include criteria defined for the time evolution of the statistical variability of a series of measurements, such as the increase in the statistical variability of a series of measurements being smaller than a reference value, or the rate of increase over time of the statistical variability of a series of measurements being smaller than a reference value.

[0224] The processing evaluation step S510 may include using time-series data of the judgment results obtained in the quality judgment step S300 as time-series data of the measured values ​​obtained in the light scattering measurement step S200. The evaluation criteria for the time-series data may include criteria defined for the time change in the rate of failure judgments obtained in the quality judgment step S300. The rate of failure judgments may be the rate of failure judgments at a predetermined time, or the rate of failure judgments at a predetermined number of judgment results. The evaluation criteria for the time-series data may include criteria defined for the time change in the rate of failure judgments, such as the increase in the rate of failure judgments being less than a standard value, or the rate of increase in the rate of failure judgments being less than a standard value.

[0225] The process of changing processing conditions S500 preferably includes not changing the processing conditions in the processing process S100 if a normal evaluation is obtained in the processing evaluation process S510, and changing the processing conditions in the processing process S100 if an abnormal evaluation is obtained in the processing evaluation process S510.

[0226] The processing condition change step S500 preferably includes a processing condition selection step S520. The processing condition selection step S520 is a step of selecting the processing conditions for the processing step S100, which is performed after the light scattering measurement step S200. The processing condition change step S500 preferably includes changing the processing conditions in the processing step S100 based on the selection in the processing condition selection step S520.

[0227] The processing condition selection step S520 preferably includes applying a processing condition scale to the measurement value obtained in the light scattering measurement step S200 and selecting the processing conditions indicated by the application result.

[0228] The processing condition scale is a scale that correlates the measured values ​​obtained in the light scattering measurement process S200 with the processing conditions in the processing process S100. The processing condition scale may be a single scale, or it may be a combination of multiple scales in a logical AND and / or logical OR relationship. The processing control unit 22 may acquire the processing condition scale via the user interface.

[0229] The processing condition scale may include a scale that uses a series of measurements obtained in the light scattering measurement step S200. The processing condition scale may include a scale that uses the proportion of the interval between the series of measurements that is greater than a reference value.

[0230] The processing condition scale may include a scale that uses representative values ​​(e.g., mean, median, mode, maximum, minimum) of a series of measurements obtained in the light scattering measurement step S200.

[0231] The processing condition scale may include a scale that uses the statistical variability (e.g., variance, standard deviation, range, interquartile range) of a series of measurements obtained in the light scattering measurement step S200.

[0232] In the slicing process S110, the processing conditions for the wire slicing process include the slicing speed, wire tension, type of abrasive grain (e.g., grain size), feed rate, coolant flow rate, and coolant temperature. In the slicing process S110, the processing conditions for the laser slicing process include the laser output, laser wavelength, laser pulse width, laser pulse rate, laser beam intensity profile, laser beam size, focal length, scanning speed, laser gas flow rate, and laser gas type.

[0233] In the grinding / lapping process S120, the processing conditions for the grinding process include grinding pressure, rotational speed of the grinding disc, rotational speed of the substrate holder, type of grinding disc (e.g., grit size of fixed abrasive grains), grinding time, ambient temperature, flow rate of the coolant, and temperature of the coolant. The grinding amount, determined from multiple processing conditions, is also a processing condition in the grinding process.

[0234] In the grinding / lapping process S120, the processing conditions for the lapping process include lapping pressure, rotational speed of the lapping pad, type of lapping pad (e.g., hardness), rotational speed of the substrate holder, relative motion pattern of the lapping pad and substrate holder, type of lapping slurry (e.g., particle size, concentration, chemical composition of free abrasive grains), flow rate of the lapping slurry, lapping time, ambient temperature, flow rate of the coolant, and temperature of the coolant. The lapping amount, determined from multiple processing conditions, is also a processing condition in the lapping process.

[0235] In the polishing process S130, the processing conditions for the mechanical polishing process include polishing pressure, rotational speed of the polishing pad, type of polishing pad (e.g., hardness), rotational speed of the substrate holder, relative motion pattern of the polishing pad and substrate holder, polishing time, ambient temperature, flow rate of the coolant, and temperature of the coolant. The amount of polishing, which is determined from multiple processing conditions, is also a processing condition in the mechanical polishing process.

[0236] In the polishing process S130, the processing conditions for the chemical mechanical polishing process include polishing pressure, rotational speed of the polishing pad, type of polishing pad (e.g., hardness), rotational speed of the substrate holder, relative motion pattern of the polishing pad and substrate holder, type of polishing slurry (e.g., particle size, concentration, and chemical composition of free abrasive particles), flow rate of the polishing slurry, polishing time, ambient temperature, flow rate of the coolant, and temperature of the coolant. The amount of polishing, determined from multiple processing conditions, is also a processing condition in the chemical mechanical polishing process.

[0237] The processing conditions in etching process S140 include the etching amount. The processing conditions in growth process S150 include the growth amount.

[0238] The manufacturing method Y may be a method of obtaining a semiconductor substrate 1 as a manufactured product after the semiconductor substrate 1 (semiconductor raw material) has undergone the final processing step S100, or it may be a method of obtaining a semiconductor substrate 1 as a manufactured product after the semiconductor substrate 1 has undergone the final light scattering measurement step S200.

[0239] The manufacturing method Y may be a method of obtaining a semiconductor substrate 1 (semiconductor raw material) as a product by performing one or more unit steps, each including one or more processing steps S100 and a light scattering measurement step S200, on a semiconductor substrate 1 (semiconductor raw material) as a raw material, once or twice. Preferably, the unit step includes a processing condition change step S500. The unit step may also include a transport step. The unit step may include performing the light scattering measurement step S200 after the processing step S100, or performing the processing step S100 after the light scattering measurement step S200.

[0240] As supplementary information, this disclosure provides two embodiments of the light scattering measurement performed in the light scattering measurement step S200.

[0241] In the first embodiment, the relationship between surface roughness (arithmetic mean roughness Ra obtained from AFM images) and light scattering intensity in light scattering measurements was obtained for multiple substrates (see Figure 8). Here, the multiple substrates include machined substrates, which are either sliced ​​substrates, grinding / lapping substrates, or polished substrates. The multiple substrates also include non-contact processed substrates, which are substrates after heat treatment performed in the second example of the embodiment (described later) (data enclosed by dashed lines in the figure). Compared to the machining performed on machined substrates, the heat treatment performed on non-contact processed substrates can remove existing internal strain without introducing new internal strain. In machined substrates, the relationship between surface roughness and light scattering intensity is linear on a log-log graph. In contrast, in non-contact processed substrates, the relationship between surface roughness and light scattering intensity deviates from the linear relationship in machined substrates, and the light scattering intensity for the same surface roughness is smaller. This result indicates that the light scattering intensity reflects not only surface scattering caused by surface roughness, but also internal scattering caused by internal strain, etc. In particular, in regions with low surface roughness (for example, regions with surface roughness of less than 1 nm), surface scattering is small, so the light scattering intensity can be said to adequately reflect internal scattering.

[0242] In the second embodiment, for multiple substrates, the light scattering intensity in light scattering measurements and the growth-time stacking fault (IGSF) density are set to 0.1 cm². -2The following relationships were obtained by estimating the amount of etching required to achieve the desired result (see Figure 9). The estimated amount of etching was obtained by etching multiple similar substrates and measuring the IGSF density after etching, from the relationship between the amount of etching and the IGSF density at that etching amount. Here, multiple substrates include substrates after chemical and mechanical polishing. Multiple substrates also include substrates after mechanical polishing (data enclosed by dashed lines in the figure). In the substrates after chemical and mechanical polishing, the relationship between light scattering intensity and the estimated amount of etching shows a positive correlation. This is evidence that the light scattering intensity reflects the internal strain, considering that IGSF is caused by internal strain in the substrate. In contrast, in the substrates after mechanical polishing, the relationship between light scattering intensity and the estimated amount of etching deviates from the relationship in the substrates after chemical and mechanical polishing, and the light scattering intensity for the same amount of etching is larger. This result indicates that the light scattering intensity mainly reflects the surface roughness. Therefore, in areas with high surface roughness (e.g., a substrate after mechanical polishing), the light scattering intensity mainly reflects the surface roughness, while in areas with low surface roughness (e.g., a substrate after chemical mechanical polishing), the light scattering intensity mainly reflects the internal strain.

[0243] The present disclosure then provides other embodiments. Figures 10 to 12 illustrate these embodiments. For convenience of explanation, components similar to those in manufacturing method Y are denoted by the same reference numerals.

[0244] This disclosure provides, as one of the other embodiments, a method for inspecting a semiconductor substrate.

[0245] This method includes a light scattering measurement step S200. The light scattering measurement step S200 is a step in which the intensity of scattered light from the semiconductor substrate 1 is measured by a light scattering method. The light scattering measurement step S200 is the same as the light scattering measurement step S200 included in manufacturing method Y.

[0246] This method includes a quality determination step S300. The quality determination step S300 is a step to obtain a determination result regarding the quality of the semiconductor substrate 1. The quality determination step S300 is the same as the quality determination step S300 included in manufacturing method Y. This method is a method for inspecting the semiconductor substrate 1 based on the determination result obtained in the quality determination step S300. Preferably, this method includes using the determination result obtained in the quality determination step S300 as the inspection result of the semiconductor substrate 1.

[0247] This method may include a processing step S100. The processing step S100 is a process for processing the semiconductor substrate 1. The processing step S100 is the same as the processing step S100 included in manufacturing method Y.

[0248] This method includes a light scattering measurement step S200 and a quality determination step S300 in this order. Preferably, this method includes a processing step S100, a light scattering measurement step S200, and a quality determination step S300 in this order (see Figure 10).

[0249] This disclosure provides, as one of the other embodiments, a method for processing a semiconductor substrate.

[0250] This method includes a processing step S100. Processing step S100 is a process for processing the semiconductor substrate 1. Processing step S100 is the same as processing step S100 included in manufacturing method Y.

[0251] This method includes a light scattering measurement step S200. The light scattering measurement step S200 is a step in which the intensity of scattered light from the semiconductor substrate 1 is measured by a light scattering method. The light scattering measurement step S200 is the same as the light scattering measurement step S200 included in manufacturing method Y.

[0252] This method preferably includes a processing selection step S400. The processing selection step S400 is a step of selecting a processing step S100 to be performed after the light scattering measurement step S200. The processing selection step S400 is the same as the processing selection step S400 included in manufacturing method Y.

[0253] This method preferably includes a processing condition selection step S520. The processing condition selection step S520 is a step of changing the processing conditions in the processing step S100, which is performed after the light scattering measurement step S200. The processing condition selection step S520 is the same as the processing condition selection step S520 included in manufacturing method Y.

[0254] This method includes a light scattering measurement step S200 and a processing step S100 in this order. This method preferably includes a light scattering measurement step S200, a processing step S100, and a processing selection step S400 in this order. This method preferably includes a light scattering measurement step S200, a processing step S100, and a processing condition selection step S520 in this order. This method preferably includes a processing selection step S400 and a processing condition selection step S520 (see Figure 11).

[0255] This disclosure provides, as one of the other embodiments, a method for evaluating the processing of a semiconductor substrate.

[0256] This method includes a processing step S100. Processing step S100 is a process for processing the semiconductor substrate 1. Processing step S100 is the same as processing step S100 included in manufacturing method Y.

[0257] This method includes a light scattering measurement step S200. The light scattering measurement step S200 is a step in which the intensity of scattered light from the semiconductor substrate 1 is measured by a light scattering method. The light scattering measurement step S200 is the same as the light scattering measurement step S200 included in manufacturing method Y.

[0258] This method includes a processing evaluation step S510. The processing evaluation step S510 is a step to obtain evaluation results for the processing step S100 performed before the light scattering measurement step S200. The processing evaluation step S510 is the same as the processing evaluation step S510 included in manufacturing method Y.

[0259] This method includes a processing step S100, a light scattering measurement step S200, and a processing evaluation step S510 in that order (see Figure 12).

[0260] The present disclosure continues by providing a first example of the embodiment described above. Figures 13-14 illustrate this example. For convenience of explanation, components similar to those in the embodiment are denoted by the same reference numerals.

[0261] The general processing method for semiconductor substrates is subdivided into multiple steps, so not only the content of each step but also the way in which the steps interact with each other determines the processing quality. Furthermore, since each step is a contact step, the processing quality is inherently unstable. Therefore, improving the processing quality of semiconductor substrates is not easy at all. Moreover, there is no known general method that can comprehensively determine substrate quality. Consequently, the introduction of multiple types of measurement methods is essential to determine substrate quality, which is inconvenient in terms of cost and operation. This situation can be said to be a factor that reduces motivation for improving the processing quality of semiconductor substrates.

[0262] In this example, in a common semiconductor substrate processing method, the substrate quality is comprehensively determined by light scattering measurement. This indirectly improves the processing quality of semiconductor substrates, ultimately leading to the achievement of good and stable substrate quality.

[0263] The line body 10 in this example includes a slicing device 12, a grinding / lapping device 13 (a grinding device and / or a lapping device), a polishing device 14 (a mechanical polishing device and / or a chemical mechanical polishing device), a cleaning device, a plurality of light scattering measuring devices 17, and a conveying device 18 (see Figure 13; however, the cleaning device is omitted). The order of the line body 10 in this example is: slicing device 12, cleaning device, light scattering measuring device 17, grinding / lapping device 13, cleaning device, light scattering measuring device 17, polishing device 14, cleaning device, light scattering measuring device 17.

[0264] In this example, manufacturing method Y is performed by line X. Manufacturing method Y in this example includes a slicing step S110, a grinding / lapping step S120 (grinding step and / or lapping step), a polishing step S130 (mechanical polishing step and / or chemical mechanical polishing step), a light scattering measurement step S200, and a processing condition change step S500 (see Figure 14). Manufacturing method Y in this example includes the slicing step S110, the light scattering measurement step S200, the grinding / lapping step S120, the light scattering measurement step S200, the polishing step S130, and the light scattering measurement step S200 in this order.

[0265] The slicing process S110 is a process in which the slicing apparatus 12 slices the semiconductor ingot to form a semiconductor substrate 1. The grinding / lapping process S120 is a process in which the grinding / lapping apparatus 13 grinds and / or laps the semiconductor substrate 1. The polishing process S130 is a process in which the polishing apparatus 14 mechanically polishes and / or chemically polishes the semiconductor substrate 1.

[0266] The light scattering measurement step S200 is a step in which the light scattering measuring device 17 measures the intensity of scattered light from the semiconductor substrate 1 using the light scattering method.

[0267] In the light scattering measurement step S200, the acquisition step S211 includes acquiring a series of signal values ​​corresponding to the entire surface of the semiconductor substrate 1.

[0268] In the light scattering measurement step S200, the acquisition step S211 includes making the incident light L1 S-polarized or P-polarized. If the processing step S100 immediately preceding the light scattering measurement step S200 is a slicing step S110 or a grinding / lapping step S120, the acquisition step S211 includes making the incident light L1 S-polarized. If the processing step S100 immediately preceding the light scattering measurement step S200 is a polishing step S130, the acquisition step S211 includes making the incident light L1 P-polarized. The manufacturing method Y in this example may include performing a light scattering measurement step S200 in which the incident light L1 is S-polarized in the acquisition step S211, and then performing a light scattering measurement step S200 in which the incident light L1 is P-polarized in the acquisition step S211, in succession.

[0269] The manufacturing method Y in this example may include a transport step. The transport step is a step in which the transport control unit 21 controls the transport device 18 so that the semiconductor substrate 1 is transported along the line body 10.

[0270] The manufacturing method Y in this example may include a cleaning step. The cleaning step is a step in which a cleaning device cleans the semiconductor substrate 1. The main purpose of the cleaning step is to improve the validity of the measurement in the light scattering measurement step S200 by cleaning off the items to be cleaned (e.g., adhering substances) that have been generated as a result of the processing step S100.

[0271] The manufacturing method Y in this example includes performing the aforementioned method for inspecting the semiconductor substrate. That is, the manufacturing method Y in this example includes a quality determination step S300. The quality determination step S300 is a step in which the measured value obtained in the light scattering measurement step S200 is determined to determine whether or not it meets a predetermined quality standard, and the result of the measurement value determination is either an acceptance judgment corresponding to the measured value meeting the quality standard, or a rejection judgment corresponding to the measured value not meeting the quality standard.

[0272] In the quality determination process S300, the measured values ​​to be determined are arbitrarily selected from representative values ​​of a series of measured values ​​(e.g., mean, median, mode, maximum, minimum) and statistical variability of a series of measured values ​​(e.g., variance, standard deviation, range, interquartile range).

[0273] In the quality determination process S300, the quality standard used for determination is a standard that conforms to the processing conditions of the processing process S100 immediately following the light scattering measurement process S200. However, if there is no processing process S100 immediately following the light scattering measurement process S200, the quality standard used for determination is the standard for the semiconductor substrate 1 as a product.

[0274] The transport process involves transporting the semiconductor substrate 1 along the line body 10 if it passes the quality judgment process S300, and transporting the semiconductor substrate 1 to the outside of the line body 10 if it fails the quality judgment process S300.

[0275] The manufacturing method Y in this example preferably includes a method for evaluating the processing of the semiconductor substrate as described above. That is, the manufacturing method Y in this example preferably includes a processing condition change step S500, and the processing condition change step S500 preferably includes a processing evaluation step S510. The processing evaluation step S510 is a step in which the processing control unit 22 evaluates whether the time-series data of the measured values ​​obtained in the light scattering measurement step S200 meets a predetermined evaluation criterion, and obtains either a normal evaluation corresponding to the time-series data meeting the evaluation criterion, or an abnormal evaluation corresponding to the time-series data not meeting the evaluation criterion, as the evaluation result of the time-series data.

[0276] The processing condition change step S500 includes not changing the processing conditions in the processing step S100 performed before the light scattering measurement step S200 if a normal evaluation is obtained, and changing the processing conditions in the processing step S100 performed before the light scattering measurement step S200 if an abnormal evaluation is obtained.

[0277] In the processing evaluation step S510, the time change of the measured value obtained in the light scattering measurement step S200 (e.g., increase amount, time increase rate) may be used as the evaluation criterion, or the time change of the rejection judgment obtained in the quality judgment step S300 (e.g., increase amount, time increase rate) may be used as the evaluation criterion. In the processing evaluation step S510, the measured value used as the evaluation criterion is arbitrarily selected from representative values ​​of a series of measured values ​​(e.g., mean, median, mode, maximum, minimum) or statistical variability of a series of measured values ​​(e.g., variance, standard deviation, range, interquartile range).

[0278] The present disclosure then provides a second example of the embodiments described above. Figures 15 to 22 illustrate this example. For convenience of explanation, components similar to those in the embodiments are denoted by the same reference numerals.

[0279] In general semiconductor substrate processing methods, each step involves mechanical contact with the semiconductor substrate, resulting in contact damage. This contact damage can manifest as surface damage (e.g., surface scratches) or internal damage (e.g., crystal distortion). Therefore, while improving processing quality can improve substrate quality, it cannot achieve the best possible substrate quality.

[0280] In this example, a process that does not involve mechanical contact with the semiconductor substrate is introduced, and the substrate quality is comprehensively determined by light scattering measurement. This directly and indirectly improves the processing quality of the semiconductor substrate, ultimately leading to the achievement of good and stable substrate quality.

[0281] This example deals with SiC substrates, a type of semiconductor substrate. Because SiC substrates have high hardness, they require high-stress processing, making them susceptible to contact damage. Furthermore, SiC ingots, which form the basis of SiC substrates, are prone to developing crystal defects during their growth. Therefore, improving the processing quality of SiC substrates is particularly difficult.

[0282] In this example, a heat treatment process is introduced that does not involve mechanical contact with the SiC substrate, and includes treating the SiC substrate by physical vapor transport (PVT). The PVT method in this example uses SiC sublimation gas (Si x C y This method involves transporting gases (particularly Si gas, SiC2 gas, and Si2C gas) to accelerate the sublimation or recrystallization reaction of SiC. When SiC sublimation gas is transported from the surface of the SiC substrate to the gas phase, the SiC substrate is etched as the sublimation reaction of SiC is accelerated. When SiC sublimation gas is transported from the gas phase to the surface of the SiC substrate, the SiC substrate grows as the recrystallization reaction of SiC is accelerated. Therefore, this heat treatment process can be both an etching process and a growth process. Furthermore, due to the surface kinetic properties of SiC, the sublimation and recrystallization reactions of SiC can have the effect of planarizing the surface of the SiC substrate. Therefore, this heat treatment process can be one of the planarization processes.

[0283] In this example, the semiconductor substrate 1 is a SiC substrate 2. The SiC substrate 2 is preferably an off-plate substrate. The size of the SiC substrate 2 is preferably 8 inches, and also preferably 6 inches.

[0284] Line X in this example includes a heat treatment apparatus 19 (see Figure 15). The heat treatment apparatus 19 is an element for heat treating the SiC substrate 2. The heat treatment apparatus 19 is also a thermal sublimation etching apparatus, a physical vapor phase growth apparatus, and a planarization apparatus. The heat treatment apparatus 19 may heat treat multiple SiC substrates 2 (see Figure 16).

[0285] The heat treatment apparatus 19 includes a heating furnace. The heating furnace is capable of heating its interior to 1400°C or above (especially 1600°C or above, 1800°C or above, 2000°C or above). The heating furnace is capable of forming a temperature gradient inside it. The heating furnace has a temperature gradient inside 10 3 Pa or less (especially 10 1 Pa or less, 10 -1 Pa or less, 10 -3 Pa or less and less than 10 -7 It is preferable that the furnace is capable of being vacuumed to Pa or higher. It is preferable that the inner wall of the heating furnace does not contain graphite. It is preferable that the inner wall of the heating furnace is made entirely of metal.

[0286] The heat treatment apparatus 19 includes a crucible 19100. The crucible 19100 is an element that contains the SiC substrate 2 and is also an element that forms a physical gas phase transport environment.

[0287] The crucible 19100 includes a housing member 19110 and a closing member 19120. The housing member 19110 is an element that houses the SiC substrate 2 as a container, and the closing member 19120 is an element that houses the SiC substrate 2 as a lid. The housing member 19110 and the closing member 19120 come into close contact with each other at the contact points when housing. When the housing member 19110 and the closing member 19120 come into close contact with each other at the contact points, it is preferable that they engage with each other (for example, fit together, screw together).

[0288] Crucible 19100 contains SiC. Crucible 19100 is preferably composed entirely of SiC. Crucible 19100 preferably contains polycrystalline SiC as SiC, but may also contain single-crystal SiC. Crucible 19100 is preferably not composed of graphite.

[0289] The crucible 19100 may include a support structure 19130. The support structure 19130 is an element that supports the SiC substrate 2. The support structure 19130 supports the SiC substrate 2 away from the inner wall of the crucible 19100. When the heat treatment apparatus 19 heats a plurality of SiC substrates 2, the support structure 19130 may support the SiC substrates 2 apart from each other. The support structure 19130 may be a protruding structure formed on the crucible 19100, or it may be a structural member configured separately from the crucible 19100.

[0290] The heat treatment apparatus 19 selectively includes a Si source 19200 (see Figure 17). The Si source 19200 is an element that supplies Si gas to the physical gas phase transport environment. In this disclosure, a heat treatment apparatus 19 that does not include a Si source 19200 is referred to as a conventional type, and a heat treatment apparatus 19 that includes a Si source 19200 is referred to as a Si-supplied type.

[0291] The Si source 19200 may be solid Si placed inside the crucible 19100.

[0292] The Si source 19200 may be contained as Si in the crucible 19100. The crucible 19100 may be formed such that Si is exposed on its inner wall. The crucible 19100 may be composed entirely of SiC and Si.

[0293] The heat treatment apparatus 19 preferably includes a crucible 19300. The crucible 19300 is an element that houses the crucible 19100, and also an element that suppresses the carbonization of the SiC contained in the crucible 19100.

[0294] The crucible 19300 includes a housing member 19310 and a closing member 19320. The housing member 19310 is an element that houses the crucible 19300 as a container, and the closing member 19320 is an element that houses the crucible 19300 as a lid. The housing member 19310 and the closing member 19320 come into close contact with each other at the contact points when housing. When the housing member 19310 and the closing member 19320 come into close contact with each other at the contact points, it is preferable that they engage with each other (for example, fit together, screw together).

[0295] The crucible 19300 contains a material that occludes C atoms. The crucible 19300 is preferably entirely composed of a material that occludes C atoms. The crucible 19300 preferably contains tantalum carbide (TaC) as a material that occludes C atoms, and preferably contains carburized tantalum (Ta x C y / Ta).

[0296] The heat treatment apparatus 19 preferably includes an external Si source. The external Si source is a factor that suppresses the carbonization of SiC contained in the crucible 19100.

[0297] The external Si source may be solid Si disposed outside the crucible 19100 and inside the crucible 19300.

[0298] The external Si source may be contained in the crucible 19300 as Si. The crucible 19300 may be formed such that Si is exposed on its inner wall. The external Si source may be contained in the crucible 19300 as tantalum silicide (Ta x Si y ). The crucible 19300 may be formed such that tantalum silicide is exposed on its inner wall. The crucible 19300 may be entirely composed of tantalum silicide and carburized tantalum (Ta x Si y / Ta x C y / Ta).

[0299] The processing conditions of the heat treatment apparatus 19 include the heating temperature, the magnitude of the temperature gradient, the pressure inside the heat treatment furnace, the pressure of the inert gas, and the heating time. The processing conditions of the heat treatment apparatus 19 also include the etching amount or growth amount determined from a plurality of processing conditions.

[0300] The manufacturing method Y of this example includes a heat treatment step S160. The heat treatment step S160 is a factor that heat-treats the SiC substrate. The heat treatment step S160 may be an etching step S140 (thermal sublimation etching step). The heat treatment step S160 may be a growth step S150 (physical vapor deposition step). The heat treatment step S160 may be a planarization step. The heat treatment step S160 may include heat-treating a plurality of SiC substrates 2.

[0301] The heat treatment step S160 includes a preparation step S161. The preparation step S161 is a step of preparing the SiC substrate 2 for heat treatment.

[0302] Preparation step S161 includes placing the SiC substrate 2 in a closed space. In this disclosure, the closed space is a space in which the conductance of the SiC sublimation gas relative to the outside is sufficiently small. The closed space may be a quasi-closed space with non-zero conductance, or a fully closed space with zero conductance.

[0303] Preparation step S161 preferably includes housing the SiC substrate 2 in the crucible 19100 when placing the SiC substrate 2 in a closed space. Preparation step S161 preferably includes forming a semi-closed space by bringing the housing member 19110 and the closing member 19120 into close contact when housing the SiC substrate 2 in the crucible 19100. Preparation step S161 preferably includes engaging (for example, fitting, screwing) the housing member 19110 and the closing member 19120 when bringing the housing member 19110 and the closing member 19120 into close contact.

[0304] The preparation step S161 preferably includes bringing the surface of the SiC substrate 2 directly into contact with the inner wall of the crucible 19100. If the heat treatment step S160 heats a plurality of SiC substrates 2, the preparation step S161 preferably includes bringing the SiC substrates 2 directly into contact with each other.

[0305] Preparation step S161 may include supporting the SiC substrate 2 away from the inner wall of the crucible 19100. If the heat treatment step S160 heat treatments multiple SiC substrates 2, preparation step S161 may include supporting the SiC substrates 2 apart from each other. Preparation step S161 may include using the support structure 19130 to support the SiC substrates 2.

[0306] Preparation step S161 selectively includes the use of Si source 19200. In this disclosure, heat treatment step S160 that does not include the use of Si source 19200 is referred to as the normal type, and heat treatment step S160 that includes the use of Si source 19200 is referred to as the Si supply type.

[0307] Preparation step S161 may include, when using the Si source 19200, placing the solid Si, which is the Si source 19200, in a closed space on which the SiC substrate 2 is placed. Preparation step S161 may also include, when using the Si source 19200, using a crucible 19100 containing the Si, which is the Si source 19200.

[0308] Preparation step S161 preferably includes housing the crucible 19100 in the crucible 19300. Preparation step S161 preferably includes forming a semi-closed space by bringing the housing member 19310 and the closing member 19320 into close contact when housing the crucible 19100 in the crucible 19300. Preparation step S161 preferably includes engaging (for example, fitting, screwing) the housing member 19310 and the closing member 19320 when bringing the housing member 19310 and the closing member 19320 into close contact.

[0309] Preparation step S161 preferably includes the use of an external Si source. When using an external Si source, preparation step S161 may include placing the solid Si, which is the external Si source, outside the crucible 19100. When using an external Si source, preparation step S161 may also include placing the solid Si, which is the external Si source, outside the crucible 19100 and inside the crucible 19300, or it may include using a crucible 19300 containing Si or tantalum silicide, which is the external Si source.

[0310] Preparation step S161 may also preferably include placing the crucible 19100 containing the SiC substrate 2 into a heating furnace, and may also preferably include placing the crucible 19300 containing the crucible 19100 into a heating furnace.

[0311] The heat treatment step S160 includes a heating step S162. The heating step S162 is a step of heating the SiC substrate 2.

[0312] The heating step S162 includes heating the enclosed space in which the SiC substrate 2 is placed. When heating the enclosed space, the heating step S162 may include heating the crucible 19100, or heating the crucible 19300, or heating the inside of the heating furnace. The heating step S162 includes heating the enclosed space in which the SiC substrate 2 is placed to 1400°C or higher or higher (particularly 1600°C or higher or 1800°C or higher or higher) and 2300°C or lower or lower. When heating the enclosed space to a predetermined temperature, the heating step S162 may include heating the crucible 19100 to its predetermined temperature, or heating the crucible 19300 to its predetermined temperature, or heating the inside of the heat treatment furnace to its predetermined temperature.

[0313] The heating step S162 includes heating the enclosed space for a heating time of 10 minutes or more or more (especially 30 minutes or more, 1 hour or more) and 3 hours or less or less (especially 2 hours or less).

[0314] Heating step S162 includes evacuating the enclosed space in which the SiC substrate 2 is placed. Heating step S162 may include evacuating the inside of crucible 19100, evacuating the inside of crucible 19300, or evacuating the inside of the heat treatment furnace. Heating step S162 includes evacuating the inside of the heat treatment furnace 10 3 Pa or less (especially 10 1 Pa or less, 10 -1 Pa or less, 10 -3 Pa or less and less than 10 -7 It is preferable that the value be Pa or greater or greater.

[0315] The heating step S162 includes physical gas-phase transport in a closed space where the SiC substrate 2 is placed. The heating step S162 includes transporting SiC sublimation gas when performing physical gas-phase transport.

[0316] The heating step S162 includes physical gas phase transport between the surface of the SiC substrate 2 and the gas phase of the closed space. Preferably, the heating step S162 includes physical gas phase transport between the surface of the SiC substrate 2 and the crucible 19100 through the gas phase of the closed space. When the heat treatment step S160 heats a plurality of SiC substrates 2, it is preferable that the heating step S162 includes physical gas phase transport between the surfaces of the SiC substrates 2 through the gas phase environment of the closed space.

[0317] The heating step S162 preferably includes making the SiC substrate 2 and the gas phase of the closed space into a phase equilibrium system (SiC-C phase equilibrium system or SiC-Si phase equilibrium system) when performing physical gas phase transport. The heating step S162 preferably includes supplying SiC sublimation gas to the gas phase of the closed space by sublimating the SiC contained in the crucible 19100 when making the SiC substrate 2 and the gas phase of the closed space into a phase equilibrium system. In this disclosure, the SiC-C phase equilibrium system is a phase equilibrium system of SiC solid phase, C solid phase, and gas phase, and the SiC-Si phase equilibrium system is a phase equilibrium system of SiC solid phase, liquid phase, and gas phase.

[0318] In the conventional heat treatment process S160, the phase equilibrium system between the SiC substrate 2 and the gas phase of the closed space becomes a SiC-C phase equilibrium system. In the Si-supplied heat treatment process S160, the phase equilibrium system between the SiC substrate 2 and the gas phase of the closed space becomes a SiC-Si phase equilibrium system because the Si source 19200 is included in the phase equilibrium system.

[0319] In physical gas-phase transport, the sublimation and recrystallization reactions of SiC energetically stabilize the surface shape of the SiC substrate, and as a result, spontaneous planarization of the SiC substrate surface occurs. That is, the heating step S162 includes planarizing the surface of the SiC substrate 2 by performing physical gas-phase transport.

[0320] In physical gas-phase transport, the sublimation and recrystallization reactions of SiC energetically stabilize the surface shape of the SiC substrate, resulting in the spontaneous formation of a step-terrace structure on the surface of the SiC substrate. That is, the heating step S162 includes forming a step-terrace structure on the surface of the SiC substrate 2 by performing physical gas-phase transport.

[0321] It is known that when the phase equilibrium system between the SiC substrate 2 and the gas phase of the closed space is a SiC-C phase equilibrium system, step bunching spontaneously forms on the surface of the SiC substrate, and when the phase equilibrium system between the SiC substrate 2 and the gas phase of the closed space is a SiC-Si phase equilibrium system, step bunching spontaneously decomposes on the surface of the SiC substrate. That is, in a normal heat treatment process S160, the heating process S162 includes forming step bunching on the surface of the SiC substrate 2 by performing physical gas phase transport. Also, in a Si-supplied heat treatment process S160, the heating process S162 includes decomposing the step bunching on the surface of the SiC substrate 2 by performing physical gas phase transport.

[0322] The heating step S162 includes transporting SiC sublimation gas from the high-temperature side to the low-temperature side of the temperature gradient by forming a temperature gradient in the closed space where the SiC substrate 2 is placed, in order to perform physical gas phase transport. The heating step S162 may include forming a temperature gradient inside the crucible 19100, or inside the crucible 19300, or inside the heating furnace, in order to form a temperature gradient in the closed space. The heating step S162 may also include forming a temperature difference between the containment member 19110 and the closing member 19120, or between the containment member 19310 and the closing member 19320, in order to form a temperature gradient in the closed space.

[0323] The heating step S162 preferably includes forming a temperature gradient in a closed space in a direction that penetrates the surface of the SiC substrate 2 (for example, a direction perpendicular to the surface). The heating step S162 preferably includes forming a temperature gradient between the surface of the SiC substrate 2 and the inner wall of the crucible 19100 that is directly opposite the surface of the SiC substrate 2. When the heat treatment step S160 heat treatments a plurality of SiC substrates 2, the heating step S162 preferably includes forming a temperature gradient between the surface of one SiC substrate 2 and the surface of another SiC substrate 2 that is directly opposite it.

[0324] The heating step S162 includes either setting the surface of the SiC substrate 2 to the high-temperature side and the gas phase of the closed space to the low-temperature side, or setting the gas phase of the closed space to the high-temperature side and the surface of the SiC substrate 2 to the low-temperature side, in order to form a temperature gradient in the closed space. In this disclosure, the heat treatment step S160 which includes setting the surface of the SiC substrate 2 to the high-temperature side and the gas phase of the closed space to the low-temperature side is referred to as the etching type, and the heat treatment step S160 which includes setting the gas phase of the closed space to the high-temperature side and the surface of the SiC substrate 2 to the low-temperature side is referred to as the growth type.

[0325] In the etching-type heat treatment process S160, the heating process S162 involves transporting SiC sublimation gas from the surface of the SiC substrate 2 to the gas phase of the closed space by setting the surface of the SiC substrate 2 to the high-temperature side and the gas phase of the closed space to the low-temperature side, thereby etching the surface of the SiC substrate 2 (see Figure 18).

[0326] In the etching-type heat treatment process S160, the surface of the SiC substrate 2 opposite to the surface to be etched grows by transporting SiC sublimation gas from the gas phase of a closed space at the same temperature gradient as the temperature gradient that causes etching. That is, in the etching-type heat treatment process S160, the heating process S162 includes etching one surface of the SiC substrate 2 and simultaneously growing the other surface of the SiC substrate 2.

[0327] In the growth-type heat treatment process S160, the heating process S162 involves transporting SiC sublimation gas from the gas phase of the closed space to the surface of the SiC substrate 2 by setting the gas phase of the closed space to the high-temperature side and the surface of the SiC substrate 2 to the low-temperature side, thereby causing the surface of the SiC substrate 2 to grow (see Figure 19).

[0328] In the growth-type heat treatment process S160, the surface of the SiC substrate 2 opposite to the surface to be grown is etched by transporting SiC sublimation gas into the gas phase of a closed space with the same temperature gradient as the temperature gradient that causes growth. That is, in the growth-type heat treatment process S160, the heating process S162 includes growing one surface of the SiC substrate 2 and simultaneously etching the other surface of the SiC substrate 2.

[0329] The heating step S162 selectively includes, when performing physical gas phase transport, making the gas phase in the closed space where the SiC substrate 2 is placed a mixed gas phase of SiC sublimation gas and an inert gas that does not interfere with the phase equilibrium system (e.g., Ar gas, N2 gas). In this disclosure, the heat treatment step S160 that does not include making the gas phase in the closed space a mixed gas phase is referred to as the low-pressure type, and the heat treatment step S160 that includes making the gas phase in the closed space a mixed gas phase is referred to as the high-pressure type.

[0330] In the high-pressure heat treatment process S160, the heating process S162 preferably includes evacuating the closed space and then introducing an inert gas into the closed space in order to make the gas phase of the closed space a mixed gas phase. The heating process S162 may include introducing the inert gas into the crucible 19100, introducing the inert gas into the crucible 19300, or introducing the inert gas into the heat treatment furnace. The heating process S162 preferably includes introducing the inert gas to set the pressure inside the heat treatment furnace to 1 kPa or more or more (particularly 5 kPa or more or more, 10 kPa or more or more, 100 kPa or more or more) and 300 kPa or less or less.

[0331] In the high-pressure heat treatment process S160, the heating process S162 includes heating the enclosed space in which the SiC substrate 2 is placed to 1800°C or higher or higher (particularly 2000°C or higher or 2200°C or higher or higher) and 2300°C or lower or lower.

[0332] In the low-pressure heat treatment step S160, the sublimation and recrystallization reactions of SiC are reaction-limiting and therefore tend to occur at the step locations on the SiC substrate 2. Consequently, the surface of the SiC substrate 2 is anisotropically etched or grown along the terraces. That is, in the low-pressure heat treatment step S160, the heating step S162 includes anisotropically etching or growing the surface of the SiC substrate 2.

[0333] In the high-pressure heat treatment step S160, the sublimation and recrystallization reactions of SiC are surface diffusion-limited, making them less likely to occur at the step locations on the SiC substrate 2. Therefore, the surface of the SiC substrate 2 is etched or grown isotropically, without following the terraces. In other words, in the high-pressure heat treatment step S160, the heating step S162 includes isotropically etching or growing the surface of the SiC substrate 2.

[0334] The heating step S162 preferably includes suppressing the carbonization of SiC contained in crucible 19100 by increasing the Si / C ratio of the gas phase outside crucible 19100. The heating step S162 preferably includes, in increasing the Si / C ratio of the gas phase outside crucible 19100, adsorbing C atoms contained in the gas phase outside crucible 19100 into a material that adsorbs C atoms contained in crucible 19300. The heating step S162 preferably includes generating Si gas from an external Si source and introducing it into the gas phase outside crucible 19100 in order to increase the Si / C ratio of the gas phase outside crucible 19100.

[0335] The processing conditions in the heat treatment process S160 include the heating temperature, the magnitude of the temperature gradient, the pressure inside the heat treatment furnace, the pressure of the inert gas, and the heating time. The processing conditions in the heat treatment process S160 also include the etching amount or growth amount determined from multiple processing conditions.

[0336] The heat treatment process S160 includes the preparation process S161 and the heating process S162, performed in that order (see Figure 20).

[0337] The heat treatment process S160 is a process that performs specific processing on the SiC substrate 2 depending on a combination of multiple molds. In this disclosure, the arithmetic mean roughness Ra of the SiC substrate 2 may be determined as the average value of the absolute difference between the contour line and its mean line in the AFM image (10 μm × 10 μm) of the surface of the SiC substrate 2 (excluding the edges).

[0338] The high-pressure heat treatment process S160 can planarize a SiC substrate 2 having an arithmetic mean roughness Ra of 15 nm or more or greater (especially 20 nm or more or greater, 30 nm or more or greater, 50 nm or more or greater, 100 nm or more or greater) and 500 nm or less or less (especially 300 nm or less or less, 200 nm or less or less, 150 nm or less or less). In this disclosure, the high-pressure heat treatment process S160 is referred to as the annealing process. The annealing process is one of the etching process S140 or the growth process S150.

[0339] The low-pressure, normal, and etching type heat treatment process S160 can etch a SiC substrate 2 having an arithmetic mean roughness Ra of 5 nm or more or greater (especially 10 nm or more or greater, 15 nm or more or greater, 20 nm or more or greater, 30 nm or more or greater) and 300 nm or less (especially 200 nm or less or less, 100 nm or less or less, 50 nm or less or less) while planarizing it. In this disclosure, the low-pressure, normal, and etching type heat treatment process S160 is referred to as the C-rich etching process. The C-rich etching process is one of the etching processes S140.

[0340] The low-pressure, Si-supplied, etching-type heat treatment process S160 can etch a SiC substrate 2 having an arithmetic mean roughness Ra of 1 nm or more or greater (especially 1.5 nm or more or greater, 2 nm or more or greater, 3 nm or more or greater, 5 nm or more or greater) and 30 nm or less (especially 20 nm or less or less, 15 nm or less or less, 10 nm or less or less) while decomposing step bunching on the surface of the SiC substrate 2. In this disclosure, the low-pressure, Si-supplied, etching-type heat treatment process S160 is referred to as the Si-rich etching process. The Si-rich etching process is one of the etching processes S140.

[0341] The low-pressure, normal, and growth-type heat treatment process S160 allows for the growth of a SiC substrate 2 with sufficiently few step bunchings while forming step bunchings on the surface of the SiC substrate 2, thereby suppressing the direct propagation of basal plane dislocations (BPDs) contained in the SiC substrate 2 to the growth layer. In this disclosure, the low-pressure, normal, and growth-type heat treatment process S160 is referred to as the C-rich growth process. The C-rich growth process is one of the growth processes S150.

[0342] The low-pressure, Si-supplied, growth-type heat treatment process S160 allows the SiC substrate 2 to grow while decomposing step bunching on the surface of the SiC substrate 2. In this disclosure, the low-pressure, Si-supplied, growth-type heat treatment process S160 is referred to as the Si-rich growth process. The Si-rich growth process is one of the growth processes S150.

[0343] The line body 10 in this example includes two conventional heat treatment devices 19, one Si-supplied heat treatment device 19, a cleaning device, and one light scattering measuring device 17 (see Figure 21; however, the cleaning device is omitted). The order of the line body 10 in this example is: cleaning device, first conventional heat treatment device 19, cleaning device, light scattering measuring device 17, cleaning device, second conventional heat treatment device 19, cleaning device, light scattering measuring device 17, cleaning device, Si-supplied heat treatment device 19, cleaning device, light scattering measuring device 17, cleaning device, second conventional heat treatment device 19, cleaning device, light scattering measuring device 17, cleaning device, Si-supplied heat treatment device 19, cleaning device, light scattering measuring device 17.

[0344] The manufacturing method Y in this example includes five heat treatment steps S160 (annealing step, C-rich etching step, Si-rich etching step, C-rich growth step, Si-rich growth step) and a light scattering measurement step S200 (see Figure 22). The manufacturing method Y in this example includes the following steps in this order: heat treatment step S160 (annealing step), light scattering measurement step S200, heat treatment step S160 (C-rich etching step, etching step S140), light scattering measurement step S200, heat treatment step S160 (Si-rich etching step, etching step S140), light scattering measurement step S200, heat treatment step S160 (C-rich growth step, growth step S150), light scattering measurement step S200, heat treatment step S160 (Si-rich growth step, growth step S150), and light scattering measurement step S200.

[0345] The C-rich etching process and the C-rich growth process are performed by the same heat treatment apparatus 19 (the first conventional type heat treatment apparatus 19). The C-rich etching process and the C-rich growth process include setting the direction of the temperature gradient of the heat treatment apparatus 19 to opposite directions.

[0346] The Si-rich etching process and the Si-rich growth process are performed by the same heat treatment apparatus 19 (Si-supplying type heat treatment apparatus 19). The Si-rich etching process and the Si-rich growth process include setting the direction of the temperature gradient of the heat treatment apparatus 19 to opposite directions.

[0347] The light scattering measurement step S200 is a step in which the light scattering measuring device 17 measures the intensity of scattered light from the SiC substrate 2 using the light scattering method.

[0348] In the light scattering measurement step S200, the acquisition step S211 includes acquiring a series of signal values ​​corresponding to the entire surface of the SiC substrate 2.

[0349] In the light scattering measurement step S200, the acquisition step S211 includes making the incident light L1 S-polarized or P-polarized. If the processing step S100 immediately preceding the light scattering measurement step S200 is an annealing step or a C-rich etching step, the acquisition step S211 includes making the incident light L1 S-polarized. If the processing step S100 immediately preceding the light scattering measurement step S200 is a Si-rich etching step, a C-rich growth step, or a Si-rich growth step, the acquisition step S211 includes making the incident light L1 P-polarized. The manufacturing method Y in this example may include performing a light scattering measurement step S200 in which the incident light L1 is S-polarized in the acquisition step S211, and then performing a light scattering measurement step S200 in which the incident light L1 is P-polarized in the acquisition step S211, in succession.

[0350] The manufacturing method Y in this example may include a transport step. The transport step is the process of transporting the semiconductor substrate 1 along the main line 10.

[0351] The manufacturing method Y in this example may include a cleaning step. The cleaning step is a step in which a cleaning apparatus cleans the SiC substrate 2. The main purpose of the cleaning step immediately before the light scattering measurement step S200 is to improve the validity of the measurement in the light scattering measurement step S200 by cleaning off any objects to be cleaned (e.g., deposits) that have been generated as a result of the processing step S100. The main purpose of the cleaning step immediately before the heat treatment step S160 is to appropriately control the surface kinetics of the SiC substrate 2 in the heat treatment step S160. The cleaning step immediately before the heat treatment step S160 is preferably an etching step (e.g., a wet etching step, a dry etching step).

[0352] The manufacturing method Y in this example preferably includes a method for inspecting a semiconductor substrate similar to that in the first example.

[0353] In this example, the manufacturing method Y preferably includes a method for processing a semiconductor substrate similar to that in the first example.

[0354] The present disclosure then provides a third example of the embodiments described above. Figures 23-24 illustrate this example. For convenience of explanation, components similar to those in the embodiments are denoted by the same reference numerals.

[0355] In general semiconductor substrate processing methods, the quality of the semiconductor substrate after processing can be predicted with a certain degree of variability. Therefore, by predicting a processing step that will result in a suitable substrate quality and using that as the next processing step, it is possible to suppress defects in subsequent processing steps. On the other hand, when processing a semiconductor substrate whose substrate quality cannot be predicted, it is impossible to predict a process that will result in a suitable substrate quality, and therefore, it is not possible to suppress defects in the first processing step.

[0356] In this example, we first comprehensively determine the substrate quality of any semiconductor substrate using light scattering measurements, and then propose a processing method that is suitable for that quality. This suppresses defects that occur in the initial processing steps, and ultimately enables the achievement of good and stable substrate quality.

[0357] The line body 10 in this example includes a grinding / lapping device 13 (grinding device and / or lapping device), a polishing device 14 (mechanical polishing device and / or chemical mechanical polishing device), a cleaning device, a light scattering measuring device 17, and a conveying device 18 (see Figure 23; however, the cleaning device is omitted). The order of the line body 10 in this example is cleaning device, light scattering measuring device 17, and two branches. The order at the first branch is polishing device 14, cleaning device, and light scattering measuring device 17. The order at the second branch is grinding / lapping device 13, and then merging back into the first branch (polishing device 14, cleaning device, and light scattering measuring device 17).

[0358] The manufacturing method Y in this example is performed by line X. The manufacturing method Y in this example includes one or more processing steps S100 and a light scattering measurement step S200 (see Figure 24). The one or more processing steps S100 are one or more of the following: grinding / lapping steps S120 (grinding step and / or lapping step) and polishing steps S130 (mechanical polishing step and / or chemical mechanical polishing step).

[0359] The grinding / lapping process S120 is a process in which the grinding / lapping apparatus 13 grinds and / or laps the semiconductor substrate 1. The polishing process S130 is a process in which the polishing apparatus 14 mechanically polishes and / or chemically polishes the semiconductor substrate 1.

[0360] The light scattering measurement step S200 is a step in which the light scattering measuring device 17 measures the intensity of scattered light from the semiconductor substrate 1 using the light scattering method.

[0361] In the light scattering measurement step S200, the acquisition step S211 includes acquiring a series of signal values ​​corresponding to the entire surface of the semiconductor substrate 1.

[0362] In the light scattering measurement step S200, the acquisition step S211 includes making the incident light L1 S-polarized. The manufacturing method Y in this example may include performing, consecutively, a light scattering measurement step S200 in which the incident light L1 is S-polarized in the acquisition step S211, and a light scattering measurement step S200 in which the incident light L1 is P-polarized in the acquisition step S211.

[0363] The manufacturing method Y in this example may include a transport step. The transport step is a step in which the transport control unit 21 controls the transport device 18 so that the semiconductor substrate 1 is transported along the line body 10.

[0364] The manufacturing method Y in this example may include a cleaning step. The cleaning step is a step in which a cleaning device cleans the semiconductor substrate 1. The main purpose of the cleaning step is to improve the validity of the measurement in the light scattering measurement step S200 by cleaning the object to be cleaned (e.g., adhering substances).

[0365] The manufacturing method Y in this example includes the method for processing the semiconductor substrate described above. That is, the manufacturing method Y in this example includes a processing selection step S400. The processing selection step S400 is a step in which a processing scale is applied to the measurement value obtained in the light scattering measurement step S200, and a processing step S100 is selected as indicated by the application result.

[0366] In the processing selection step S400, the processing step S100 corresponding to the measurement value on the processing scale is a process that includes a polishing step S130, and a process that includes a grinding / lapping step S120 and a polishing step S130 in that order. In other words, the processing selection step S400 is a process of selecting one of the processes that includes a polishing step S130, and a process that includes a grinding / lapping step S120 and a polishing step S130 in that order. Furthermore, the transport step immediately following the light scattering measurement step S200 is a process of transporting the semiconductor substrate 1 to either the grinding / lapping device 13 or the polishing device 14.

[0367] In the processing selection step S400, the measurement values ​​to which the processing scale is applied are arbitrarily selected from representative values ​​of a series of measurement values ​​(e.g., mean, median, mode, maximum, minimum) and statistical variability of a series of measurement values ​​(e.g., variance, standard deviation, range, interquartile range).

[0368] In the processing selection process S400, the processing process scale includes a scale that associates a series of measured values ​​with the processing process S100 via surface properties, and is determined based on a relationship between a series of measured values ​​and surface properties obtained in advance (e.g., a data set, a relational expression) and a surface property suitable for the processing process S100.

[0369] Surface properties suitable for the grinding process may be those with an arithmetic mean roughness Ra of 10 nm or more or greater (especially 30 nm or more or greater, 100 nm or more or greater, 300 nm or more or greater) and 1000 nm or less or less.

[0370] Surface properties suitable for the lapping process may be those with an arithmetic mean roughness Ra of 1 nm or more or greater (especially 3 nm or more or greater, 10 nm or more or greater, 30 nm or more or greater) and 100 nm or less or less.

[0371] In the polishing process S130, the surface properties suitable for the mechanical polishing process may be those with an arithmetic mean roughness Ra of 1 nm or more or greater (especially 3 nm or more or greater, 10 nm or more or greater, 30 nm or more or greater) and 100 nm or less or less.

[0372] In the polishing process S130, the surface properties suitable for the chemical mechanical polishing process may be those with an arithmetic mean roughness Ra of 0.1 nm or more or greater (especially 0.3 nm or more or greater, 1 nm or more or greater, 3 nm or more or greater) and 10 nm or less or less.

[0373] In this example, the manufacturing method Y preferably includes a processing condition selection step S520. This step involves applying a processing condition scale to the measurement value obtained in the light scattering measurement step S200 and selecting the processing conditions indicated by the application result.

[0374] In the processing condition selection step S520, the measurement values ​​to which the processing process scale is applied are arbitrarily selected from representative values ​​of a series of measurement values ​​(e.g., mean, median, mode, maximum, minimum) and statistical variability of a series of measurement values ​​(e.g., variance, standard deviation, range, interquartile range).

[0375] 1: Semiconductor substrate 2: SiC substrate 10: Main line 11: Processing equipment 12: Slicing equipment 13: Grinding / lapping equipment 14: Polishing equipment 15: Etching equipment 16: Growth equipment 17: Light scattering measuring equipment 17100: Optical system 17121: Photomultiplier tube 17200: Control system 17210: Signal acquisition unit 17220: Signal evaluation unit 17230: Voltage control unit 17240: Output unit 18: Transport equipment 19: Heat treatment equipment 19100: Crucible 19300: Crucible 20: Line control system 21: Transport control unit 22: Processing control unit S100: Processing process S110: Slicing process S120 : Grinding / lapping process S130 : Polishing process S140 : Etching process S150 : Growth process S160 : Heat treatment process S161 : Preparation process S162 : Heating process S200 : Light scattering measurement process S210 : Main measurement process S211 : Acquisition process S212 : Gain determination process S213 : Conversion process S220 : Preliminary measurement process S221 : Acquisition process S222 : Signal value evaluation process S223 : Setting process S300 : Quality judgment process S400 : Processing selection process S500 : Processing condition change process S510 : Processing evaluation process S520 : Processing condition selection process X: Line Y: Manufacturing method

Claims

1. A line for manufacturing semiconductor substrates, comprising a line body and a line control system, wherein the line body includes a processing apparatus for processing semiconductor substrates, a light scattering measuring apparatus for obtaining measured values ​​of the intensity of scattered light from the semiconductor substrate by a light scattering method, and a transport apparatus for transporting the semiconductor substrates, the line control system includes a transport control unit, and the transport control unit controls the transport apparatus based on the measured values ​​obtained by the light scattering measuring apparatus.

2. The transport control unit determines whether the measurement value obtained by the light scattering measuring device meets a predetermined quality standard, and controls the transport device based on the determination result, as described in claim 1.

3. The line according to claim 2, wherein the transport control unit obtains, as a result of determining the measured value, either an acceptance determination corresponding to the measured value meeting the quality standard, or a rejection determination corresponding to the measured value not meeting the quality standard, and when an acceptance determination is obtained, the transport device is controlled to transport the semiconductor substrate along the line body, and when a rejection determination is obtained, the transport device is controlled to stop transporting the semiconductor substrate along the line body.

4. The line according to any one of claims 1 to 3, wherein the line body is formed to branch from the light scattering measuring device to a plurality of processing devices at at least one location on the line body, the transport control unit applies a processing device scale to the measurement value obtained by the light scattering measuring device, and controls the transport device to transport the semiconductor substrate to the processing device at the branching destination indicated by the application result, and the processing device scale is a scale that associates the measurement value obtained by the light scattering measuring device with the plurality of processing devices at the branching destination.

5. The line according to any one of claims 1 to 4, wherein the line body is formed such that the processing apparatus is located in front of the light scattering measuring device at at least one location on the line body, the line control system includes a processing control unit, and the processing control unit evaluates whether the time-series data of the measured values ​​obtained by the light scattering measuring device meets predetermined evaluation criteria and controls the processing apparatus based on the evaluation result.

6. The line according to claim 5, wherein the processing control unit obtains either a normal evaluation, which corresponds to the time series data satisfying the evaluation criteria, or an abnormal evaluation, which corresponds to the time series data not satisfying the evaluation criteria, and when a normal evaluation is obtained, it controls the processing apparatus so as not to change the processing conditions, and when an abnormal evaluation is obtained, it controls the processing apparatus to change the processing conditions.

7. The line according to any one of claims 1 to 6, wherein the line body is formed such that the processing device is located after the light scattering measuring device at at least one location on the line body, the line control system includes a processing control unit, the processing control unit applies a processing condition scale to the measurement value obtained by the light scattering measuring device and controls the processing device so that the processing conditions are as indicated by the application result, and the processing condition scale is a scale that correlates the measurement value obtained by the light scattering measuring device with the processing conditions of the processing device.

8. The line according to any one of claims 1 to 7, wherein the line body includes a plurality of light scattering measuring devices, each light scattering measuring device includes an optical system, each optical system includes a photomultiplier tube, and in the order of the line body, the gain of the photomultiplier tube included in the rear light scattering measuring device is equal to or greater than the gain of the photomultiplier tube included in the front light scattering measuring device.

9. The line according to any one of claims 1 to 8, wherein the line body includes a slicing device for slicing a semiconductor ingot to form the semiconductor substrate, and a grinding / lapping device for grinding and / or lapping the semiconductor substrate, as the processing apparatus.

10. The line according to any one of claims 1 to 9, wherein the line body includes a grinding / lapping apparatus for grinding and / or lapping the semiconductor substrate and a polishing apparatus for polishing the semiconductor substrate as the processing apparatus.

11. The line according to any one of claims 1 to 10, wherein the line body includes an etching apparatus for etching the semiconductor substrate and a growth apparatus for growing the semiconductor substrate as the processing apparatus.

12. The line according to any one of claims 1 to 11, wherein the semiconductor substrate is a SiC substrate, the line body includes a heat treatment apparatus for heat treating the SiC substrate as the processing apparatus, the heat treatment apparatus includes a crucible for housing the SiC substrate, and the crucible contains SiC.

13. The line according to claim 12, wherein the heat treatment apparatus includes a second crucible housing the crucible, the second crucible containing carburized tantalum.

14. A method for manufacturing a semiconductor substrate, comprising: a processing step of processing a semiconductor substrate; and a light scattering measurement step of obtaining a measurement value of the intensity of scattered light from the semiconductor substrate by a light scattering method.

15. The manufacturing method according to claim 14, comprising a quality determination step, wherein the quality determination step includes determining whether the measured value obtained in the light scattering measurement step meets a predetermined quality standard.

16. The manufacturing method according to claim 15, wherein the quality determination step includes obtaining, as a result of determining the measured value, either an acceptance determination corresponding to the measured value meeting the quality standard, or a rejection determination corresponding to the measured value not meeting the quality standard.

17. A manufacturing method according to any one of claims 14 to 16, comprising a processing selection step, wherein the processing selection step comprises applying a processing step scale to a measurement value obtained in the light scattering measurement step and selecting the processing step indicated by the application result, and the processing step scale is a scale that associates the measurement value obtained in the light scattering measurement step with a plurality of processing steps.

18. A manufacturing method according to any one of claims 14 to 17, comprising a processing condition modification step, wherein the processing condition modification step comprises a processing evaluation step, the processing evaluation step comprises evaluating whether the time-series data of the measured values ​​obtained in the light scattering measurement step meets predetermined evaluation criteria, and the processing condition modification step comprises changing the processing conditions in the processing step performed before the light scattering measurement step based on the evaluation results obtained in the processing evaluation step.

19. The manufacturing method according to claim 18, wherein the processing evaluation step obtains either a normal evaluation corresponding to the time series data satisfying the evaluation criteria, or an abnormal evaluation corresponding to the time series data not satisfying the evaluation criteria, and the processing condition change step includes not changing the processing conditions in the processing step if the normal evaluation is obtained in the processing evaluation step, and changing the processing conditions in the processing step if the abnormal evaluation is obtained in the processing evaluation step.

20. A manufacturing method according to any one of claims 14 to 19, comprising a processing condition modification step, wherein the processing condition modification step comprises a processing condition selection step, the processing condition selection step comprises applying a processing condition scale to the measured value obtained in the light scattering measurement step and selecting the processing conditions indicated by the application result, the processing condition modification step comprises changing the processing conditions in the processing step based on the selection in the processing condition selection step, and the processing condition scale is a scale that associates the measured value obtained in the light scattering measurement step with the processing conditions in the processing step.

21. A manufacturing method according to any one of claims 14 to 20, comprising a plurality of the above-mentioned light scattering measurement steps, wherein each light scattering measurement step includes a main measurement step of acquiring a signal value of a photomultiplier tube and obtaining the measured value based on the acquired signal value, and the main measurement step includes an acquisition step of controlling an optical system to acquire a signal value of the photomultiplier tube, and a conversion step of obtaining the measured value from the signal value acquired in the acquisition step, wherein in the preceding and succeeding light scattering measurement steps, the gain of the photomultiplier tube in the acquisition step of the subsequent light scattering measurement step is equal to or greater than the gain of the photomultiplier tube in the acquisition step of the subsequent light scattering measurement step.

22. A manufacturing method according to any one of claims 14 to 21, comprising a slicing step of slicing a semiconductor ingot to form the semiconductor substrate, and a grinding / lapping step of grinding and / or lapping the semiconductor substrate, as the processing steps.

23. The manufacturing method according to any one of claims 14 to 22, comprising a grinding / lapping step of grinding and / or lapping the semiconductor substrate and a polishing step of polishing the semiconductor substrate as the processing steps.

24. The manufacturing method according to any one of claims 14 to 23, comprising an etching step for etching the semiconductor substrate and a growth step for growing the semiconductor substrate as the processing steps.

25. The manufacturing method according to any one of claims 14 to 24, wherein the semiconductor substrate is a SiC substrate, and the manufacturing method includes a heat treatment step of heat-treating the SiC substrate, the heat treatment step includes a preparation step of preparing the SiC substrate for heat treatment, and a heating step of heating the SiC substrate, the preparation step includes placing the SiC substrate in a crucible, the heating step includes heating the crucible, and the crucible contains SiC.

26. The manufacturing method according to claim 25, wherein the preparation step includes placing the crucible in a second crucible, the second crucible containing carburized tantalum.

27. A method for inspecting a semiconductor substrate, comprising: a light scattering measurement step of obtaining a measurement value of the intensity of scattered light from the semiconductor substrate by a light scattering method; and a quality determination step of determining whether the measurement value obtained in the light scattering measurement step meets a predetermined quality standard, and inspecting the semiconductor substrate based on the determination result.

28. The method according to claim 27, wherein the quality determination step includes obtaining, as a result of determining the measured value, either an acceptance determination corresponding to the measured value meeting the quality standard, or a rejection determination corresponding to the measured value not meeting the quality standard.

29. A method for processing a semiconductor substrate, comprising: a light scattering measurement step of obtaining a measurement value of the intensity of scattered light from the semiconductor substrate by a light scattering method; a processing step of processing the semiconductor substrate that has undergone the light scattering measurement step; and a processing selection step of applying a processing step scale to the measurement value obtained in the light scattering measurement step and selecting the processing step indicated by the application result, wherein the processing step scale is a scale that associates the measurement value obtained in the light scattering measurement step with a plurality of processing steps.

30. The method according to claim 29, comprising a processing condition selection step of applying a processing condition scale to a measurement value obtained in the light scattering measurement step and selecting processing conditions indicated by the application result, wherein the processing condition scale is a scale that associates the measurement value obtained in the light scattering measurement step with the processing conditions in the processing step.

31. A method for processing a semiconductor substrate, comprising: a light scattering measurement step of obtaining a measurement value of the intensity of scattered light from the semiconductor substrate by a light scattering method; a processing step of processing the semiconductor substrate that has undergone the light scattering measurement step; and a processing condition selection step of applying a processing condition scale to the measurement value obtained in the light scattering measurement step and selecting processing conditions indicated by the application result, wherein the processing condition scale is a scale that associates the measurement value obtained in the light scattering measurement step with the processing conditions in the processing step.

32. A method for evaluating the processing of a semiconductor substrate, comprising: a processing step of processing a semiconductor substrate; a light scattering measurement step of obtaining measured values ​​of the intensity of scattered light from the semiconductor substrate by a light scattering method for the semiconductor substrate that has undergone the processing step; and a processing evaluation step of evaluating whether the time-series data of the measured values ​​obtained in the light scattering measurement step meets predetermined evaluation criteria, and evaluating the processing step based on the evaluation results.

33. The method according to claim 32, wherein the processing evaluation step obtains, as an evaluation result of the time series data, either a normal evaluation corresponding to the time series data satisfying the evaluation criteria, or an abnormal evaluation corresponding to the time series data not satisfying the evaluation criteria.

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