Integrated cell and manufacturing method therefor

Abstract

An integrated cell is provided according to exemplary embodiments. The integrated cell comprises: a substrate which comprises a plurality of holes; a plurality of metal oxide patterns which are in the plurality of holes of the substrate and have a polarity opposite to that of the substrate; a plurality of beta ray source patterns which are configured to radiate beta rays to the substrate and the plurality of metal oxide patterns; and a plurality of filling patterns which are surrounded by the plurality of beta ray source patterns.

Description

Integrated battery and method of manufacturing the same

[0001] The present invention relates to an integrated battery and a method for manufacturing the same. The present application claims the benefit of Korean application No. 10-2024-0128716, filed on September 24, 2024, which is incorporated herein by reference in its entirety.

[0002] A beta battery (or beta radioactive battery) is a type of radioactive battery that produces electricity using the beta decay of radioactive isotopes. This battery generates power primarily by using semiconductor materials and radioactive isotopes that emit beta rays. Beta batteries operate by directly converting the energy released during the radioactive decay process into electrical energy.

[0003] Beta batteries have a very long lifespan because they can continuously produce energy over the half-life of a radioactive isotope. In addition, they can supply a constant power regardless of the environment, allowing for stable use even in extreme conditions.

[0004] The problem that the technical concept of the present invention aims to solve is to provide an integrated battery and a method for manufacturing the same.

[0005] According to exemplary embodiments of the present invention for solving the above-described problem, a direct cell is provided. The integrated cell comprises: a substrate having a plurality of holes; a plurality of metal oxide patterns located within the plurality of holes of the substrate and having opposite polarity to the substrate; a plurality of beta ray source patterns configured to irradiate beta rays onto the substrate and the plurality of metal oxide patterns; and a plurality of filling patterns surrounded by the plurality of beta ray source patterns.

[0006] The above plurality of filling patterns are magnetized.

[0007] The magnetization direction of each of the plurality of filling patterns is perpendicular to the upper surface of the substrate.

[0008] The magnetization direction of each of the plurality of filling patterns is parallel to the upper surface of the substrate.

[0009] The magnetization direction of each of the above plurality of filling patterns is oblique to the upper surface of the substrate.

[0010] Each of the above plurality of beta-ray source patterns is between the corresponding one among the plurality of metal oxide patterns and the corresponding one among the plurality of filling patterns.

[0011] Each of the above plurality of filling patterns contains a material different from each of the above plurality of beta ray source patterns.

[0012] Each of the above plurality of beta ray source patterns is tritium ( 3 H, tritium), calcium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), Thulium-171( 171 Tm), tantalum-179( 179 Ta), cadmium-109( 109 Cd), germanium-68 68 Ge), cerium-159( 159 Ce) and tungsten-181( 181 Includes one or more of W).

[0013] Each of the above plurality of filling patterns includes a ferromagnetic material.

[0014] Each of the above plurality of filling patterns comprises one or more of iron (Fe), nickel (Ni), cobalt (Co), manganese-bismuth (MnBi), neodymium-iron-boron (NdFeB), samarium-cobalt (SmCo), triiron tetroxide (Fe3O4), cobalt ferrite (CoFe2O4), nickel-manganese-gallium (Ni2MnGa), and graphene doped with fluorine.

[0015] Each of the above plurality of beta ray source patterns is nickel-63 ( 63 It includes Ni), and each of the plurality of filling patterns is nickel-58 ( 58 Ni), Nickel-60 60 Ni), Nickel-61 61 Ni), Nickel-62 62 Ni) and nickel-64 64 Includes one or more of Ni).

[0016] The lower surface of the substrate and the lower surface of each of the plurality of metal oxide patterns form a co-plane.

[0017] Each of the above plurality of metal oxide patterns has a cup shape.

[0018] The lower surface of the substrate, the lower surface of each of the plurality of metal oxide patterns, and the lower surface of each of the plurality of beta ray source patterns form a coplane.

[0019] Each of the above beta ray source patterns has a cup shape.

[0020] The lower surface of the substrate, the lower surface of each of the plurality of metal oxide patterns, the lower surface of each of the plurality of beta ray source patterns, and the lower surface of each of the plurality of filling patterns form a co-plane.

[0021] Each of the above beta ray source patterns has a cup shape.

[0022] According to exemplary embodiments, a method for providing an integrated cell is provided. The method comprises the steps of: providing a substrate; patterning the substrate such that a plurality of recesses are formed on the substrate; forming a metal oxide layer on the substrate; forming a beta ray source layer on the metal oxide layer; forming a filling layer on the metal oxide layer; and performing a first Chemical Mechanical Polishing (CMP) process, wherein in the first CMP process, the metal oxide layer is separated to form a plurality of metal oxide patterns, the beta ray source layer is separated to form a plurality of beta ray source patterns, and the filling layer is separated to form a plurality of filling patterns.

[0023] The above method further includes the step of magnetizing the plurality of filling patterns.

[0024] The magnetization direction of each of the above plurality of filling patterns is perpendicular to the upper surface of the substrate.

[0025] The magnetization direction of each of the plurality of filling patterns is parallel to the upper surface of the substrate.

[0026] The magnetization direction of each of the above plurality of filling patterns is oblique to the upper surface of the substrate.

[0027] The above method further includes the step of performing a second CMP process such that the lower surface of the substrate and the lower surface of each of the plurality of metal oxide patterns form a co-plane.

[0028] The step of performing the second CMP process is performed prior to the step of magnetizing the plurality of filling patterns.

[0029] The step of performing the second CMP process is performed after the step of magnetizing the plurality of filling patterns.

[0030] According to exemplary embodiments, a method for manufacturing a secondary battery is provided. The method comprises the steps of: providing a substrate; patterning the substrate so as to form a plurality of recesses on the substrate; forming a metal oxide layer on the substrate; forming a beta ray source layer on the metal oxide layer; forming a filling layer on the metal oxide layer; magnetizing the filling layer; and performing a first CMP process such that the metal oxide layer is separated to form a plurality of metal oxide patterns, the beta ray source layer is separated to form a plurality of beta ray source patterns, and the filling layer is separated to form a plurality of filling patterns.

[0031] The magnetization direction of the above-mentioned filling layer is perpendicular to the upper surface of the substrate.

[0032] The magnetization direction of the above-mentioned filling layer is parallel to the upper surface of the substrate.

[0033] The magnetization direction of the above-mentioned filling layer is oblique to the upper surface of the substrate.

[0034] An integrated cell according to exemplary embodiments of the present invention may include a plurality of filling patterns surrounded by a plurality of beta ray source patterns. Each of the plurality of filling patterns may be magnetized in a set direction, and accordingly, the trajectory of each beta particle emitted by the plurality of beta ray source patterns may be controlled or each beta particle may be accelerated, thereby improving the energy efficiency of the integrated cell.

[0035] The effects obtainable from the exemplary embodiments of the present invention are not limited to those mentioned above, and other unmentioned effects can be clearly derived and understood by those skilled in the art to which the exemplary embodiments of the present disclosure belong from the following description. That is, unintended effects resulting from the implementation of the exemplary embodiments of the present disclosure can also be derived by those skilled in the art from the exemplary embodiments of the present disclosure.

[0036] FIG. 1 is a flowchart for explaining a method for manufacturing an integrated cell according to exemplary embodiments.

[0037] FIGS. 2 to 9 are drawings for explaining a method of manufacturing an integrated cell according to exemplary embodiments.

[0038] FIG. 10 is a drawing for illustrating a method of manufacturing an integrated cell according to other exemplary embodiments.

[0039] FIG. 11 is a drawing for illustrating a method of manufacturing an integrated cell according to other exemplary embodiments.

[0040] FIG. 12 is a flowchart illustrating a method for manufacturing an integrated cell according to other exemplary embodiments.

[0041] FIG. 13 is a drawing for illustrating a method of manufacturing an integrated cell according to other exemplary embodiments.

[0042] FIG. 14 is a flowchart illustrating a method for manufacturing an integrated cell according to other exemplary embodiments.

[0043] FIG. 15 is a drawing for illustrating a method of manufacturing an integrated cell according to other exemplary embodiments.

[0044] FIG. 16 is a drawing showing an integrated cell according to other exemplary embodiments.

[0045] FIG. 17 is a drawing showing an integrated cell according to other exemplary embodiments.

[0046] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. Prior to this, terms and words used in this specification and claims should not be interpreted as being limited to their ordinary or dictionary meanings. Instead, based on the principle that the inventor can appropriately define the concepts of terms to best describe his invention, they should be interpreted in a meaning and concept consistent with the technical spirit of the present invention.

[0047] Therefore, the embodiments described in this specification and the configurations illustrated in the drawings are merely the most preferred embodiments of the present invention and do not represent all of the technical ideas of the present invention; thus, it should be understood that various equivalents and modifications that can replace them may exist at the time of filing this application.

[0048] In addition, in describing the present invention, if it is determined that a detailed description of related known components or functions may obscure the essence of the invention, such detailed description is omitted.

[0049] Since embodiments of the present invention are provided to more fully explain the invention to those skilled in the art, the shapes and sizes of the components in the drawings may be exaggerated, omitted, or schematically depicted for clearer explanation. Accordingly, the size or proportion of each component does not entirely reflect the actual size or proportion.

[0050]

[0051] (1st and 2nd embodiments)

[0052] Figure 1 is a flowchart illustrating a method for manufacturing an integrated battery.

[0053] FIGS. 2 to 9 are drawings for explaining a method of manufacturing an integrated cell according to exemplary embodiments.

[0054] Referring to FIGS. 1 and 2, a substrate (110) can be provided in P110. According to exemplary embodiments, the substrate (110) may include any one of a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, and a sapphire substrate.

[0055] The substrate (110) can be processed by either ion implantation or diffusion. The substrate (110) can be doped with a dopant of a first conductivity type. The dopant of the first conductivity type may be a p-type dopant or an n-type dopant.

[0056] The p-type dopant may include one or more of boron (B), aluminum (Al), gallium (Ga), and indium (In). The n-type dopant may include one or more of nitrogen (N), phosphorus (P), arsenic (As), and antimony (Sb).

[0057]

[0058] Next, referring to FIGS. 1 and FIGS. 3, a substrate (110) can be patterned in P120. The substrate (110) can be patterned by any one of reactive ion etching (RIE) and ion beam etching, including low-temperature etching. The substrate (110) may also be patterned by anisotropic wet etching.

[0059] Before patterning the substrate (110), a mask pattern may be formed on the substrate (110). The mask pattern may be formed by photolithography. The mask pattern may expose the portion of the substrate (110) to be etched (i.e., the portion to be formed with a plurality of recesses (110R)) and cover the non-etched portion (i.e., the portion between the plurality of recesses (110R)). A hard mask may also be additionally provided between the mask pattern and the substrate (110).

[0060] A plurality of recesses (110R) may be formed by patterning the substrate (110). According to exemplary embodiments, the plurality of recesses (110R) may have a circular shape when viewed from above. When the plurality of recesses (110R) have a circular shape when viewed from above, it may be said that the plurality of recesses (110R) have a circular planar shape.

[0061] Two directions substantially parallel to the upper surface (110U) of the substrate (110) are defined as the X direction and the Y direction, and a direction substantially perpendicular to each of the X direction and the Y direction is defined as the Z direction. The X direction, the Y direction, and the Z direction may be substantially perpendicular to each other.

[0062] When multiple recesses (110R) have a circular planar shape, the multiple recesses (110R) can be arranged in a matrix. When the multiple recesses (110R) are arranged in a matrix, the multiple recesses (110R) can be aligned in the X direction and the Y direction, respectively.

[0063] When multiple recesses (110R) have a circular planar shape, the multiple recesses (110R) may be arranged in a honeycomb structure. When the multiple recesses (110R) are arranged in a honeycomb structure, the centers of the multiple recesses (110R) may be located at the vertices and centers of multiple regular hexagons of the same size that fill the plane.

[0064] Each of the multiple recesses (110R) may have a line shape when viewed from above. The multiple recesses (110R) may have a line shape that extends in the X direction and is spaced apart from each other in the Y direction. In this case, the multiple recesses (110R) may form a line and space pattern.

[0065] Each of the multiple recesses (110R) may have a variable width along the Z direction (e.g., a horizontal width such as the width in the Y direction). Each of the multiple recesses (110R) may have a tapered shape in the Z direction. Each of the multiple recesses (110R) may extend in the Z direction from the top surface (110U), and the width of each of the multiple recesses (110R) may decrease as it moves away from the top surface (110U). The width of each of the multiple recesses (110R) at a first depth from the top surface (110U) may be smaller than the width of each of the multiple recesses (110R) at a second depth from the top surface (110U) which is smaller than the first depth.

[0066]

[0067] Next, referring to FIGS. 1 and FIGS. 4, a metal oxide layer (120L) can be formed in P130. The metal oxide layer (120L) may have a uniform thickness, and accordingly, the metal oxide layer (120L) may have a conformal shape. The metal oxide layer (120L) may be formed by either Chemical Vapor Deposition (CVD) or Physical Vapor Deposition (PVD), but is not limited thereto. The metal oxide layer (120L) may also be formed by an oxidation process of a metal layer formed by metal CVD.

[0068] The metal oxide layer (120L) may comprise a metal oxide having a bandgap energy of 2.7 eV or more. In some embodiments, the metal oxide layer (120L) may comprise a material represented as AMO3 (wherein A is one or more selected from the group consisting of La, Ba, Sr, and K, and M is one or more selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0069] For example, the metal oxide layer (120L) is BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x (Here 0 <x<1) 및 LaAlO3중 하나 이상을 포함할 수 있다.

[0070] The metal oxide layer (120L) is stable even in high temperature and high humidity environments and has high carrier mobility. Carrier movement within the metal oxide layer (120L) is free from inelastic collisions. Accordingly, an integrated cell manufactured based on the metal oxide layer (120L) can have high energy efficiency and excellent heat dissipation characteristics.

[0071] According to exemplary embodiments, the carrier mobility of the metal oxide layer (120L) is about 45 cm 2 / (Vs) may be greater than. According to exemplary embodiments, the carrier mobility of the metal oxide layer (120L) is about 80 cm 2 / (Vs) may be greater than. According to exemplary embodiments, the carrier mobility of the metal oxide layer (120L) is about 120 cm 2 / (Vs) may be greater than. According to exemplary embodiments, the carrier mobility of the metal oxide layer (120L) is about 300 cm 2 / (Vs) It can be more than

[0072] The metal oxide layer (120L) can be doped with a second conductivity type dopant opposite to the first conductivity type dopant. For example, if the first conductivity type dopant is a p-type dopant, the second conductivity type dopant may be an n-type dopant, and if the first conductivity type dopant is an n-type dopant, the second conductivity type dopant may be a p-type dopant. Accordingly, a pn junction and a depletion region can be formed between the substrate (110) and the metal oxide layer (120L).

[0073]

[0074] Next, referring to FIGS. 1 and FIGS. 5, a beta ray source layer (130L) can be formed in P140. The beta ray source layer (130L) can be formed by any one of the methods of evaporation, sputtering, CVD, electroplating, or electroless plating. The beta ray source layer (130L) can have a uniform thickness, and accordingly, the beta ray source layer (130L) can have a conformal shape.

[0075] The beta ray source layer (130L) may contain a radioactive isotope. The beta ray source layer (130L) is tritium ( 3 H, tritium), calcium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), Thulium-171( 171 Tm), tantalum-179( 179 Ta), cadmium-109( 109 Cd), germanium-68 68 Ge), cerium-159( 159Ce) and tungsten-181( 181 It may include one or more of W). Radioactive isotopes may emit only beta rays, or they may also emit additional radiation other than beta rays, such as alpha rays or gamma rays.

[0076]

[0077] Next, referring to FIGS. 1 and FIGS. 6, a filling layer (140L) can be formed in P150. The filling layer (140L) can be formed by any one of the methods of evaporation, sputtering, CVD, electroplating, or electroless plating. The filling layer (140L) can be formed sufficiently to fill the recess (110R).

[0078] According to exemplary embodiments, the filling layer (140L) may include a material capable of maintaining magnetism for a long period. According to exemplary embodiments, the filling layer (140L) may include, for example, a ferromagnetic material. According to exemplary embodiments, the filling layer (140L) may include one or more of iron (Fe), nickel (Ni), cobalt (Co), manganese-bismuth (MnBi), neodymium-iron-boron (NdFeB), samarium-cobalt (SmCo), triiron tetroxide (Fe3O4), cobalt ferrite (CoFe2O4), nickel-manganese-gallium (Ni2MnGa), and graphene doped with fluorine. In this case, if the filling layer (140L) includes nickel (Ni), the nickel (Ni) of the filling layer (140L) may be different from the nickel (Ni) of the beta-ray source layer (130L). For example, the beta ray source layer (130L) is nickel-63 ( 63 In the case of including Ni), the filling layer (140L) is nickel-58 ( 58 Ni), Nickel-60 60 Ni), Nickel-61 61 Ni), Nickel-62 62 Ni) and nickel-64 64It may include one or more of Ni).

[0079]

[0080] Next, referring to FIGS. 1, 6 and 7, a first Chemical Mechanical Polishing (CMP) process can be performed at P160. The upper surface (110U) of the substrate (110) may be the endpoint of the first CMP process. The endpoint of the CMP process may be determined by a change in reflectance inside the CMP chamber or a change in the concentration of a specific chemical component.

[0081] By the first CMP process, the metal oxide layer (120L) can be separated into a plurality of metal oxide patterns (120). By the first CMP process, the beta ray source layer (130L) can be separated into a plurality of beta ray source patterns (130). By the first CMP process, the filling layer (140L) can be separated into a plurality of filling patterns (140). The upper surface of each of the plurality of metal oxide patterns (120), the upper surface of each of the plurality of beta ray source patterns (130), and the upper surface of each of the plurality of filling patterns (140) can form a co-plane with the upper surface (110U) of the substrate (110).

[0082]

[0083] Next, referring to FIGS. 1, 7 and 8, a second CMP process can be performed at P170. A plurality of metal oxide patterns (120) may be the endpoint of the second CMP process. By the second CMP process, an integrated cell (100) comprising a substrate (110), a plurality of metal oxide patterns (120), a plurality of beta ray source patterns (130) and a plurality of filling patterns (140) may be provided.

[0084] By processing P170 of FIG. 7, a plurality of recesses (110R) can become a plurality of holes (110H) extending to a new lower surface (110L') of the substrate (110). Each of the plurality of holes (110H) can penetrate the substrate (110). Each lower surface of the plurality of metal oxide patterns (120) can form a co-plane with the lower surface (110L').

[0085] According to exemplary embodiments, the substrate (110) may include a plurality of holes (110H) having a tapered shape. Each of the plurality of holes (110H) may extend in a Z direction perpendicular to the upper surface (110U) of the substrate (110). Each of the plurality of holes (110H) may penetrate the substrate (110).

[0086] A plurality of metal oxide patterns (120) may be in contact with a substrate (110). The plurality of metal oxide patterns (120) may have opposite polarity to the substrate (110). Each of the plurality of metal oxide patterns (120) may be located between the substrate (110) and a corresponding one of the plurality of beta ray source patterns (130). The thickness of each of the plurality of metal oxide patterns (120) may be uniform. Each of the plurality of metal oxide patterns (120) may have a cup shape.

[0087] A plurality of beta-ray source patterns (130) may be located within corresponding holes (110H). Each of the plurality of beta-ray source patterns (130) may have a cup shape. Each of the plurality of beta-ray source patterns (130) may be located between a corresponding metal oxide pattern (120) and a corresponding filling pattern (140). The thickness of each of the plurality of beta-ray source patterns (130) may be uniform.

[0088] Multiple filling patterns (140) may be located within corresponding holes (110H). Each of the multiple filling patterns (140) may have a tapered shape.

[0089]

[0090] Next, referring to FIGS. 1 and FIG. 9, a magnetization process can be performed at P180. The magnetization process may include applying a magnetic field (BF) to the workpiece (i.e., the integrated cell (100)) prior to the workpiece. According to exemplary embodiments, the direction of the magnetic field (BF) may be substantially perpendicular to the upper surface (110U) of the substrate (110). According to exemplary embodiments, the direction of the magnetic field (BF) may be substantially parallel to the Z direction.

[0091] Each of the plurality of filling patterns (140) can be magnetized by a magnetization process. The magnetization direction of each of the plurality of filling patterns (140) can be substantially parallel to the direction of the magnetic field (BF). According to exemplary embodiments, the magnetization direction of each of the plurality of filling patterns (140) can be substantially perpendicular to the upper surface (110U) of the substrate (110). According to exemplary embodiments, the magnetization direction of each of the plurality of filling patterns (140) can be substantially parallel to the Z direction.

[0092] According to exemplary embodiments, each of the plurality of filling patterns (140) is magnetized, and each of the plurality of filling patterns (140) can apply a magnetic field in the vicinity of each of the plurality of filling patterns (140).

[0093] Each of the plurality of beta ray source patterns (130) can be configured to emit beta rays. The depletion region between the substrate (110) and the plurality of metal oxide patterns (120) irradiated by the beta rays can be configured to generate an electromotive force by electron-hole pair production.

[0094] According to exemplary embodiments, the magnetic field applied by each of the plurality of filling patterns (140) can control the trajectory of each of the beta particles emitted by the plurality of beta ray source patterns (130). Accordingly, the incidence rate of beta particles emitted by the plurality of beta ray source patterns (130) on the depletion region between the plurality of metal oxide patterns (120) and the substrate (110) can be increased, and the energy efficiency of the integrated cell (100) can be increased.

[0095] According to exemplary embodiments, a magnetic field applied by each of the plurality of filling patterns (140) can accelerate each of the beta particles emitted by the plurality of beta ray source patterns (130). Accordingly, the average energy of the beta particles emitted by the plurality of beta ray source patterns (130) incident in the depletion region between the plurality of metal oxide patterns (120) and the substrate (110) can be increased, and the energy efficiency of the integrated cell (100) can be improved.

[0096]

[0097] (3rd Example)

[0098] FIG. 10 is a drawing for explaining a method of manufacturing an integrated battery (100) according to other exemplary embodiments.

[0099] Referring to FIG. 10, unlike in FIG. 9, the direction of the magnetic field (BF) applied to the previous workpiece (i.e., integrated cell (100)) may be substantially parallel to the upper surface (110U) of the substrate (110). According to exemplary embodiments, the magnetization direction of each of the plurality of filling patterns (140) may be substantially parallel to the upper surface (110U) of the substrate (110).

[0100]

[0101] (Fourth Example)

[0102] FIG. 11 is a drawing for explaining a method of manufacturing an integrated battery (100) according to other exemplary embodiments.

[0103] Referring to FIG. 11, unlike in FIG. 9, the direction of the magnetic field (BF) applied to the previous workpiece (i.e., the integrated cell (100)) may be oblique to the upper surface (110U) of the substrate (110). According to exemplary embodiments, the magnetization direction of each of the plurality of filling patterns (140) may be oblique to the upper surface (110U) of the substrate (110).

[0104]

[0105]

[0106] (5th Example)

[0107] FIG. 12 is a flowchart illustrating a method for manufacturing an integrated cell according to other exemplary embodiments.

[0108] FIG. 13 is a drawing for illustrating a method of manufacturing an integrated cell according to other exemplary embodiments.

[0109] For the convenience of explanation, parts that overlap with those explained with reference to Figures 1 to 9 will be omitted, and the differences will be explained mainly.

[0110] Referring to FIGS. 12 and 13, the processing of P110 to P180 is substantially the same as described with reference to FIGS. 1 to 9, but the magnetization process of P180 may be performed after the formation of the filling layer (140L) of P150 and before the performance of the first CMP of P160. Accordingly, the filling layer (140L) may be magnetized.

[0111] In FIG. 13, it is illustrated that the filling layer (140L) is magnetized by a magnetic field (BF) substantially perpendicular to the upper surface (110U) of the substrate (110), but this is for illustrative purposes only and does not limit the technical concept of the invention in any sense. A person skilled in the art will be able to easily arrive at an embodiment in which the filling layer (140L) is magnetized by a magnetic field substantially parallel to the upper surface (110U) of the substrate (110) and an embodiment in which the filling layer (140L) is magnetized by a magnetic field oblique to the upper surface (110U) of the substrate (110) based on what is described herein.

[0112]

[0113] (6th Example)

[0114] FIG. 14 is a flowchart illustrating a method for manufacturing an integrated cell according to other exemplary embodiments.

[0115] FIG. 15 is a drawing for illustrating a method of manufacturing an integrated cell according to other exemplary embodiments.

[0116] For the convenience of explanation, parts that overlap with those explained with reference to Figures 1 to 9 will be omitted, and the differences will be explained mainly.

[0117] Referring to FIGS. 14 and 15, the processing of P110 to P180 is substantially the same as described with reference to FIGS. 1 to 9, but the magnetization process of P180 may be performed after the first CMP of P160 and before the second CMP of P170. Accordingly, a plurality of filling patterns (140) may be magnetized.

[0118] In FIG. 15, a filling layer (140L) is shown being magnetized by a magnetic field (BF) substantially perpendicular to the upper surface (110U) of the substrate (110), but this is for illustrative purposes only and does not limit the technical concept of the invention in any sense. A person skilled in the art will be able to easily arrive at an embodiment in which a plurality of filling patterns (140) are magnetized by a magnetic field substantially parallel to the upper surface (110U) of the substrate (110) and an embodiment in which a plurality of filling patterns (140) are magnetized by a magnetic field oblique to the upper surface (110U) of the substrate (110) based on what is described herein.

[0119]

[0120] (6th Example)

[0121] FIG. 16 is a drawing for illustrating an integrated cell (101) according to other exemplary embodiments.

[0122] Referring to FIG. 16, the lower surface of each of the plurality of metal oxide patterns (120) and the lower surface of each of the plurality of beta ray source patterns (130) can be co-planar with the lower surface (110L) of the substrate (110).

[0123] The direct cell (101) of FIG. 16 can be provided by setting the end point of the second CMP process to the lower surface of each of the plurality of beta ray source patterns (130), unlike P170 of FIG. 1.

[0124]

[0125] (7th Example)

[0126] FIG. 17 is a drawing for illustrating an integrated cell (102) according to other exemplary embodiments.

[0127] Referring to FIG. 17, the lower surface of each of the plurality of filling patterns (140), the lower surface of each of the plurality of metal oxide patterns (120), and the lower surface of each of the plurality of beta ray source patterns (130) can be co-planar with the lower surface (110L) of the substrate (110).

[0128] The direct cell (102) of FIG. 17 can be provided by setting the end point of the second CMP process to the lower surface of each of the plurality of filling patterns (140), unlike P170 of FIG. 1.

[0129]

[0130] The present invention has been described in more detail above through drawings and embodiments. However, the configurations described in the drawings or embodiments described in this specification are merely one embodiment of the present invention and do not represent all technical concepts of the present invention; therefore, it should be understood that various equivalents and modifications that can replace them may exist at the time of filing this application.

Claims

1. A substrate including a plurality of holes; A plurality of metal oxide patterns located within the plurality of holes of the substrate and having a polarity opposite to that of the substrate; A plurality of beta-ray source patterns configured to irradiate beta rays onto the substrate and the plurality of metal oxide patterns; and An integrated cell comprising a plurality of filling patterns surrounded by the plurality of beta ray source patterns.

2. In Paragraph 1, An integrated battery characterized in that the above plurality of filling patterns are magnetized.

3. In Paragraph 2, An integrated cell characterized in that the magnetization direction of each of the plurality of filling patterns is perpendicular to the upper surface of the substrate.

4. In Paragraph 2, An integrated cell characterized in that the magnetization direction of each of the plurality of filling patterns is parallel to the upper surface of the substrate.

5. In Paragraph 2, An integrated cell characterized in that the magnetization direction of each of the plurality of filling patterns is oblique to the upper surface of the substrate.

6. In Paragraph 1, An integrated cell characterized in that each of the plurality of beta-ray source patterns is located between a corresponding one of the plurality of metal oxide patterns and a corresponding one of the plurality of filling patterns.

7. In Paragraph 1, An integrated cell characterized in that each of the plurality of filling patterns comprises a material different from each of the plurality of beta ray source patterns.

8. In Paragraph 1, Each of the above plurality of beta ray source patterns is tritium ( 3 H, tritium), calcium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), Thulium-171( 171 Tm), tantalum-179( 179 Ta), cadmium-109( 109 Cd), germanium-68 68 Ge), cerium-159( 159 Ce) and tungsten-181( 181 An integrated battery characterized by including one or more of W).

9. In Paragraph 1, An integrated battery characterized in that each of the above plurality of filling patterns comprises a ferromagnetic material.

10. In Paragraph 1, An integrated cell characterized in that each of the above plurality of filling patterns comprises one or more of iron (Fe), nickel (Ni), cobalt (Co), manganese-bismuth (MnBi), neodymium-iron-boron (NdFeB), samarium-cobalt (SmCo), triiron tetroxide (Fe3O4), cobalt ferrite (CoFe2O4), nickel-manganese-gallium (Ni2MnGa), and graphene doped with fluorine.

11. In Paragraph 1, Each of the above plurality of beta ray source patterns is nickel-63 ( 63 Includes Ni), and Each of the above plurality of filling patterns is nickel-58 ( 58 Ni), Nickel-60 60 Ni), Nickel-61 61 Ni), Nickel-62 62 Ni) and nickel-64 64 An integrated battery characterized by including one or more of Ni).

12. In Paragraph 1, An integrated battery characterized in that the lower surface of the substrate and the lower surface of each of the plurality of metal oxide patterns form a coplanar surface.

13. In Paragraph 12, An integrated cell characterized in that each of the above plurality of metal oxide patterns has a cup shape.

14. In Paragraph 1, An integrated cell characterized in that the lower surface of the substrate, the lower surface of each of the plurality of metal oxide patterns, and the lower surface of each of the plurality of beta ray source patterns form a coplane.

15. In Paragraph 14, An integrated cell characterized in that each of the above beta ray source patterns has a cup shape.

16. In Paragraph 1, An integrated cell characterized in that the lower surface of the substrate, the lower surface of each of the plurality of metal oxide patterns, the lower surface of each of the plurality of beta ray source patterns, and the lower surface of each of the plurality of filling patterns form a coplanar surface.

17. In Paragraph 16, An integrated cell characterized in that each of the above beta ray source patterns has a cup shape.

18. Step of providing a substrate; A step of patterning the substrate so as to form a plurality of recesses on the substrate; A step of forming a metal oxide layer on the substrate; A step of forming a beta-ray source layer on the metal oxide layer; A step of forming a filling layer on the metal oxide layer; and It includes the step of performing a first CMP (Chemical Mechanical Polishing) process, A method for manufacturing an integrated cell characterized in that, in the first CMP process above, the metal oxide layer is separated to form a plurality of metal oxide patterns, the beta ray source layer is separated to form a plurality of beta ray source patterns, and the filling layer is separated to form a plurality of filling patterns.

19. In Paragraph 18, A method for manufacturing an integrated cell comprising the step of magnetizing the plurality of filling patterns described above.

20. In Paragraph 19, A method for manufacturing an integrated cell characterized in that the magnetization direction of each of the plurality of filling patterns is perpendicular to the upper surface of the substrate.

21. In Paragraph 19, A method for manufacturing an integrated cell characterized in that the magnetization direction of each of the plurality of filling patterns is parallel to the upper surface of the substrate.

22. In Paragraph 19, A method for manufacturing an integrated cell characterized in that the magnetization direction of each of the plurality of filling patterns is oblique to the upper surface of the substrate.

23. In Paragraph 19, A method for manufacturing an integrated cell, further comprising the step of performing a second CMP process such that the lower surface of the substrate and the lower surface of each of the plurality of metal oxide patterns form a co-plane.

24. In Paragraph 23, A method for manufacturing an integrated cell characterized in that the step of performing the second CMP process is performed prior to the step of magnetizing the plurality of filling patterns.

25. In Paragraph 23, A method for manufacturing an integrated cell characterized in that the step of performing the second CMP process is performed after the step of magnetizing the plurality of filling patterns.

26. Step of providing a substrate; A step of patterning the substrate so as to form a plurality of recesses on the substrate; A step of forming a metal oxide layer on the substrate; A step of forming a beta-ray source layer on the metal oxide layer; A step of forming a filling layer on the metal oxide layer; A step of magnetizing the above-mentioned filling layer; and A method for manufacturing an integrated cell comprising the step of performing a first CMP process such that the metal oxide layer is separated to form a plurality of metal oxide patterns, the beta ray source layer is separated to form a plurality of beta ray source patterns, and the filling layer is separated to form a plurality of filling patterns.

27. In Paragraph 26, A method for manufacturing an integrated cell characterized in that the magnetization direction of the filling layer is perpendicular to the upper surface of the substrate.

28. In Paragraph 26, A method for manufacturing an integrated cell characterized in that the magnetization direction of the filling layer is parallel to the upper surface of the substrate.

29. In Paragraph 26, A method for manufacturing an integrated cell characterized in that the magnetization direction of the filling layer is oblique to the upper surface of the substrate.

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