Plasma processing system with upper electrode, substrate support, and edge ring system with reduced ETCH non-uniformity and arcing

Abstract

A plasma processing system includes a substrate support configured to support a substrate. The substrate support includes a baseplate and a top ceramic plate. A top edge ring is arranged around the top ceramic plate and includes an annular body with a first horizontal surface, a first sloped surface extending downwardly and radially inwardly from the first horizontal surface, and a second horizontal surface extending radially inwardly from the first sloped surface. An upper electrode arranged above the substrate support including an inner circular horizontal surface, a second sloped annular surface surrounding and extending downwardly and radially outwardly from the inner circular horizontal surface, and an annular horizontal surface surrounding the second sloped annular surface. A transition between the inner circular horizontal surface and the second sloped annular surface is located radially outside of a radially outer edge of the first sloped surface of the top edge ring.

Description

Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POAPLASMA PROCESSING SYSTEM WITH UPPER ELECTRODE, SUBSTRATE SUPPORT, AND EDGE RING SYSTEM WITH REDUCED ETCH NON-UNIFORMITY AND ARCINGCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 699,21 1 , filed on September 26, 2024. The entire disclosure of the application referenced above is incorporated herein by reference.FIELD

[0002] The present disclosure relates to substrate processing systems, and more particularly to plasma processing systems with upper electrodes, substrate supports, and edge ring systems with reduced etch non-uniformity.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] Substrate processing systems may be used to treat substrates such as semiconductor wafers. The substrate treatments may include deposition, etching, cleaning, and / or other treatments. During processing, a substrate is arranged on a substrate support in a processing chamber of the substrate processing system. Gas mixtures are introduced into the processing chamber using a gas delivery device. In some processes, radio frequency (RF) plasma may be used to initiate chemical reactions.SUMMARY

[0005] A plasma processing system includes a substrate support configured to support a substrate and includes a baseplate and a top ceramic plate. A top edge ring is arranged around the top ceramic plate and includes an annular body with a first horizontal surface, a first sloped surface extending downwardly and radially inwardly from the first horizontalAttorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA surface, and a second horizontal surface extending radially inwardly from the first sloped surface. An upper electrode arranged above the substrate support including an inner circular horizontal surface, a second sloped annular surface surrounding and extending downwardly and radially outwardly from the inner circular horizontal surface, and an annular horizontal surface surrounding the second sloped annular surface. A transition between the inner circular horizontal surface and the second sloped annular surface is located radially outside of a radially outer edge of the first sloped surface of the top edge ring.

[0006] In other features, a ceramic layer includes a flat annular body and a resistive heater embedded therein. The ceramic layer is arranged between the top edge ring and a top surface of the baseplate. A thermal interface material is arranged between the top edge ring and the ceramic layer. The thermal interface material includes a carrier made of a non-metallic material. The thermal interface material includes a carrier made of a polyimide.

[0007] In other features, the annular body of the top edge ring further includes a first vertical surface extending downwardly adjacent to the top ceramic plate. A third horizontal surface extends radially outwardly from the first vertical surface. A second vertical surface extends downwardly from the third horizontal surface. A fourth horizontal surface extends radially outwardly from the second vertical surface. A third vertical surface extends upwardly from the third horizontal surface. An annular groove is arranged on an upper and radially outer edge of the top edge ring. The annular groove includes a fifth horizontal surface and a fourth vertical surface.

[0008] In other features, a first radial width is defined between the second vertical surface and the fourth vertical surface, a second radial width is defined between the first vertical surface and the fourth vertical surface, and ratio of the first radial width to the second radial width is in a range from 10% to 20%.

[0009] In other features, a first radial width is defined between the second vertical surface and the third vertical surface, a second radial width is defined between the first vertical surface and the fourth vertical surface, and a ratio of the first radial width to the second radial width is less than 40%.

[0010] In other features, the top ceramic plate includes a cylindrical inner portion and an annular step, and a radially inner edge of the top ceramic plate overlaps a horizontal surface of the annular step.Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA

[0011] In other features, a first seal is arranged between the annular step of the ceramic top plate and the ceramic layer. A second seal is arranged between a bottom surface of the ceramic layer and an upper and radially outer edge of the baseplate.

[0012] A plasma processing system includes a substrate support configured to support a substrate and includes a baseplate and a top ceramic plate. A top edge ring is arranged around the top ceramic plate. A ceramic layer includes a flat annular body and a resistive heater embedded therein. The ceramic layer is arranged between the top edge ring and a top surface of the baseplate. A thermal interface material is arranged between the top edge ring and the ceramic layer. The thermal interface material includes a carrier made of a non-metallic material.

[0013] In other features, the thermal interface material includes a carrier made of a polyimide. The top edge ring includes an annular body with a first horizontal surface, a first sloped surface extending downwardly and radially inwardly from the first horizontal surface, and a second horizontal surface extending radially inwardly from the first sloped surface.

[0014] In other features, an upper electrode is arranged above the substrate support and includes an inner circular horizontal surface, a second sloped annular surface surrounding and extending downwardly and radially outwardly from the inner circular horizontal surface, and an annular horizontal surface surrounding the second sloped annular surface. A transition between the inner circular horizontal surface and the second sloped annular surface is located radially outside of a radially outer edge of the first sloped surface of the top edge ring.

[0015] In other features, the annular body of the top edge ring further includes a first vertical surface extending downwardly adjacent to the top ceramic plate, a third horizontal surface extending radially outwardly from the first vertical surface, a second vertical surface extending downwardly from the third horizontal surface, a fourth horizontal surface extending radially outwardly from the second vertical surface, a third vertical surface extending upwardly from the third horizontal surface, and an annular groove arranged on an upper and radially outer edge of the top edge ring, wherein the annular groove includes a fifth horizontal surface and a fourth vertical surface.

[0016] In other features, a first radial width is defined between the second vertical surface and the fourth vertical surface, a second radial width is defined between the firstAttorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA vertical surface and the fourth vertical surface, and a ratio of the first radial width to the second radial width is in a range from 10% to 20%.

[0017] In other features, a first radial width is defined between the second vertical surface and the third vertical surface, a second radial width is defined between the first vertical surface and the fourth vertical surface, and a ratio of the first radial width to the second radial width is less than 40%.

[0018] In other features, the top ceramic plate includes a cylindrical inner portion and an annular step, and a radially inner edge of the top ceramic plate overlaps a horizontal surface of the annular step.

[0019] In other features, a first seal is arranged between the annular step of the ceramic top plate and the ceramic layer. A second seal is arranged between a bottom surface of the ceramic layer and an upper and radially outer edge of the baseplate.

[0020] A top edge ring for a plasma processing system includes an annular body, a first horizontal surface, a first sloped surface extending downwardly and radially inwardly from the first horizontal surface, a second horizontal surface extending radially inwardly from the first sloped surface, a first vertical surface extending downwardly, a third horizontal surface extending radially outwardly from the first vertical surface, a second vertical surface extending downwardly from the third horizontal surface, a fourth horizontal surface extending radially outwardly from the second vertical surface, a third vertical surface extending upwardly from the third horizontal surface, and an annular groove arranged on an upper and radially outer edge of the top edge ring. The annular groove includes a fifth horizontal surface and a fourth vertical surface. A first radial width is defined between the second vertical surface and the fourth vertical surface. A second radial width is defined between the first vertical surface and the fourth vertical surface. A ratio of the first radial width to the second radial width is in a range from 10% to 20%.

[0021] In other features, a first radial width is defined between the second vertical surface and the third vertical surface, a second radial width is defined between the first vertical surface and the fourth vertical surface, and a ratio of the first radial width to the second radial width is less than 40%.

[0022] A plasma processing system includes the top edge ring. A substrate support is configured to support a substrate and includes a baseplate and a top ceramic plate. The top edge ring is arranged around the top ceramic plate. A ceramic layer includes a flatAttorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA annular body and a resistive heater embedded therein. The ceramic layer is arranged between the top edge ring and a top surface of the baseplate. A thermal interface material is arranged between the top edge ring and the ceramic layer.

[0023] In other features, the thermal interface material includes a carrier made of a non- metallic material. The thermal interface material includes a carrier made of a polyimide.

[0024] In other features, an upper electrode is arranged above the substrate support and includes an inner circular horizontal surface, a second sloped annular surface surrounding and extending downwardly and radially outwardly from the inner circular horizontal surface, and an annular horizontal surface surrounding the second sloped annular surface. A transition between the inner circular horizontal surface and the second sloped annular surface is located radially outside of a radially outer edge of the first sloped surface of the top edge ring.

[0025] In other features, the top ceramic plate includes a cylindrical inner portion and an annular step. A radially inner edge of the top ceramic plate overlaps a horizontal surface of the annular step.

[0026] In other features, a first seal is arranged between the annular step of the ceramic top plate and the ceramic layer. A second seal is arranged between a bottom surface of the ceramic layer and an upper and radially outer edge of the baseplate.

[0027] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0029] FIG. 1 is a functional block diagram of an example of a substrate processing system including an upper electrode, an electrostatic chuck for clamping and cooling a substrate, and a top edge ring to adjust a plasma sheath according to the present disclosure;

[0030] FIG. 2 is a side cross section of an example of a substrate support, a top edge ring and upper electrode;Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA

[0031] FIG. 3 is a side cross section of an example of a substrate support, a top edge ring and upper electrode according to the present disclosure;

[0032] FIG. 4 is a side cross section of an example of a substrate support and a top edge ring;

[0033] FIG. 5 is a side cross section of an example of a substrate support and a top edge ring according to the present disclosure;

[0034] FIG. 6A is a side cross section of an example of a substrate support and a top edge ring fastened to a lower ring according to the present disclosure; and

[0035] FIG. 6B is a side cross section of an example of a substrate support and a top edge ring fastened to a lower ring that is mechanically clamped according to the present disclosure.

[0036] In the drawings, reference numbers may be reused to identify similar and / or identical elements.DETAILED DESCRIPTION

[0037] When operating some plasma processing systems, arcing may occur at edges of the substrate (e.g., particularly at higher power levels), which damages the substrate. Higher etching rates at radially outer edges of the substrate are one possible cause of arcing at those locations as compared to other locations.

[0038] Extraction of heat from a top edge ring is required to meet temperature uniformity. Heat is extracted from the top edge ring using a thermal interface material arranged between the top edge ring and a cooled baseplate. In other words, forced convective cooling of the top edge ring occurs through the thermal interface material and the cooled baseplate of the substrate support. The thermal interface material is arranged between the edge ring (which is exposed to plasma) and a ceramic heating plate including a flat annular body arranged on the top surface of the baseplate.

[0039] The thermal interface material includes a conductive carrier made of metal, which has high conductivity. Since the conductivity of the thermal interface material is high, increased RF coupling occurs through the top edge ring to the baseplate in this region, which causes damage. Higher RF coupling near the edge of the substrate causes a thicker plasma sheath. Due to different capacitances from the substrate and the edgeAttorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA ring to the baseplate, the substrate voltage is higher than the edge ring voltage. The difference in voltage increases the possibility of arcing at the substrate edge.

[0040] An upper electrode is arranged above the substrate. The upper electrode is typically grounded and the baseplate is driven by an RF bias to generate plasma. In some examples, the upper electrode corresponds to a faceplate of a showerhead and includes gas through holes. In other examples, the faceplate is a solid plate and gas is supplied to the processing chamber using another approach.

[0041] The upper electrode may include an inner circular surface (arranged horizontally in a plane parallel to and above a substrate plane), an annular sloped surface (at an angle relative to the substrate plane) arranged around the inner circular surface, and an outer annular surface (arranged horizontally in a plane parallel to and above the substrate plane) surrounding the annular sloped surface. A transition from the inner circular surface to the annular sloped surface is located above the substrate edge. The radial location of the transition focuses ions generated by the plasma onto the radially outer edge of the substrate. This, in turn, causes a higher etch rate at the radially outer edge of the substrate, which increases arcing.

[0042] A plasma processing system according to the present disclosure addresses one or more of the problems described above. In some examples, the metal carrier in the thermal interface material is replaced with a non-metallic carrier material to reduce RF coupling at the radially outer edge of the substrate. In some examples, the non-metallic carrier of the thermal interface material comprises polyimide (such as a layer of Kapton).

[0043] In some examples, a shape of the upper electrode is modified. The transition between the inner circular surface and the annular sloped surface is moved radially outwardly beyond the edge of the substrate so that the ions produced by the plasma are defocused relative to the radially outer edge of the substrate. This arrangement reduces the etch rate at the radially outer edge of the substrate.

[0044] In some examples, a radial width of an upper horizontal portion of the top edge ring that is exposed to plasma is reduced to reduce the electric field at the edge of the substrate. This also reduces RF coupling at the radially outer edge of the substrate.

[0045] Referring now to FIG. 1 , a substrate processing system 100 includes a processing chamber 102 including a gas distribution device 104 and a substrate supportAttorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA106 such as an electrostatic chuck (ESC). During operation, a substrate 108 is arranged on the substrate support 106.

[0046] The substrate support 106 includes a baseplate 1 10. In some examples, the baseplate 1 10 is made of a conducting material such as aluminum. The baseplate 1 10 supports a top plate 1 12. A bond layer 1 14 bonds the top plate 1 12 to the baseplate 1 10. The baseplate 1 10 may include one or more coolant channels 1 16 for flowing coolant through the baseplate 1 10. One or more edge rings 1 18 are arranged around the substrate support 106 to shape the plasma sheath at a radially outer edge thereof as will be described further below.

[0047] A gas delivery system 130 includes one or more gas sources 132-1 , 132-2, ..., and 132-N, where N is an integer. The gas sources 132 supply one or more process gas mixtures. For an etching process, the process gas mixture may include carrier gas, inert gases, etching gas, etc. For a deposition process, the process gas mixture may include carrier gas, inert gases, deposition precursor gases, etc.

[0048] The gas sources 132 are connected by flow metering devices 134-1 , 134-2, ..., and 134-N (e.g., mass flow controllers and valves) to a manifold 140. An output of the manifold 140 is fed to the gas distribution device 104. In some examples, a vapor delivery system 170 includes one or more vapor delivery sources that supply vapor to the manifold 140 or connect to the gas distribution device 104 downstream from the manifold 140. In some examples, the vapor delivery system 170 includes one or more ampoules 174, vaporizers 176, and flow metering devices 178 to controllably supply the vapor to the processing chamber.

[0049] In some examples, a temperature controller 142 is connected to heating elements 144 (e.g., thermal control elements (TCEs) or resistive heaters) arranged in the top plate 1 12. The temperature controller 142 may be used to supply power to the heating elements 144 to control a temperature of the substrate support 106 and the substrate 108 during processing. The temperature controller 142 also operates a coolant assembly 146 that controls coolant flow through the coolant channels 116. For example, the coolant assembly 146 may include a coolant pump and coolant reservoir (not shown). The temperature controller 142 operates the coolant assembly 146 to selectively flow the coolant through the coolant channels 1 16 to cool the substrate support 106.

[0050] A valve 150 and a pump 152 are used to control pressure within the processing chamber 102 and / or to evacuate reactants from the processing chamber 102. A plasmaAttorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA generator 154 includes a radio frequency (RF) source 156 to output RF voltage / power to a matching network 158. The matching network 158 matches the impedance of the RF source 156 to the impedance of the load including the processing chamber and plasma. In some examples, the plasma generator 154 drives one of an electrode in a gas delivery device or a baseplate in the substrate support (and the other is floating or connected to a reference potential such as ground).

[0051] A controller 160 may be used to monitor system parameters and to control components of the substrate processing system 100 based on a recipe. One or more robots 161 may be used to deliver substrates onto, and remove substrates from, the substrate support 106. The gas distribution device 104 includes a gas plenum 191 that distributes gas from the gas delivery system 130 or vapor from the vapor delivery system 170 to gas through holes passing through an electrode 193 that is grounded.

[0052] Referring now to FIG. 2, a top surface of a substrate support 208 such as an electrostatic chuck supports a substrate 210. The substrate support 208 includes a top plate 212 attached by a bond layer 216 to a baseplate 214 including cooling channels 215 for receiving cooling fluid. In some examples, the top plate 212 is cylindrical. In other examples, the top plate 212 includes a cylindrical inner portion 213 and an annular step 217 extending radially outwardly from a lower and radially outer edge thereof.

[0053] An edge ring 218 includes a first horizontal surface 220 extends in a plane located above a plane including a top surface of the substrate 210. The first horizontal surface 220 extends to an upper end of a sloped surface 222 extending downwardly and radially inwardly from the first horizontal surface 220 to a second horizontal surface 224 located in a plane below a plane including a top surface of the top plate 212. A vertical surface 226 extends downwardly from a radially inner edge of the second horizontal surface 224 to a radially inner edge of a third horizontal surface 228 extending radially outwardly.

[0054] A thermal interface material (TIM) 230 may be arranged between the third horizontal surface 228 and a ceramic layer 232. The ceramic layer 232 includes a resistive heater 234 embedded therein. In some examples, a seal 237-1 such as an “O”- ring is arranged between a radially outer edge of the annular step 217 and a radially inner edge of the ceramic layer 232. Another seal (e.g., a seal 237-2) can be arranged below the ceramic layer 232 and a step on an upper and radially outer edge of the baseplate as shown in FIGS. 4 to 6B.Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA

[0055] An upper electrode 240 includes a substrate-facing surface 242 including a radially inner circular surface 244, an annular sloped surface 246 extending downwardly and radially outwardly to a horizontal annular surface 248. An inner transition 250 between the radially inner circular surface 244 and the annular sloped surface 246 is located radially inwardly relative to a radially outer edge of the substrate 210 and / or approximately aligned in a horizontal direction with a radially outer edge of the cylindrical inner portion 213 of the top plate 212. An outer transition 254 between the annular sloped surface 246 and the horizontal annular surface 248 is approximately aligned in a horizontal direction with the upper edge of the annular sloped surface 222.

[0056] A shape of plasma 260 generated between the upper electrode 240 and the baseplate 214 is affected by the edge ring 218 and the location and dimensions of the annular sloped surface 246. In this example, the plasma 260 generates ions 262 that are directed generally perpendicular to a top surface of the substrate 210 at radially inner locations. Ions 264 generated by the plasma 260 near the radially outer edge of the substrate 210 are tilted towards the substrate 210 by the sloped surfaces 222 and 246, which increases etching at that location.

[0057] In FIG. 3, an upper electrode 270 includes a substrate-facing surface 272 including a radially inner horizontal circular surface 274 and an annular sloped surface 276 extending downwardly and radially outwardly to a horizontal annular surface 278. An inner transition 280 between the radially inner horizontal circular surface 274 and the annular sloped surface 276 is located radially outwardly relative to the upper and radially outer edge of the annular sloped surface 222. An outer transition 284 between the annular sloped surface 276 and the horizontal annular surface 278 is located radially outwardly relative to the inner transition 280.

[0058] A shape of plasma 290 generated between the upper electrode 270 and the baseplate 214 is affected by the edge ring 218 and the location and dimensions of the sloped annular surface 276. In this example, the plasma 290 extends radially outwardly as compared to FIG. 2. In this example, ions 292 generated by the plasma 260 at radially inner locations are directed generally perpendicular to a top surface of the substrate 210. The ions 294 generated by the plasma 290 radially outside the radially outer edge of the substrate 210. Since the plasma sheath is wider, most of the tilted ions 294 are not focused on the radially outer edge of the substrate 210 and etching is reduced in those locations as compared to FIG. 2.Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA

[0059] Referring now to FIG. 4, the dimensions and shape of the edge ring can also be used to reduce etching of the radially outer edge of the substrate. A top surface of a substrate support 308 supports a substrate 310. The substrate support 308 includes a top plate 312 attached by a bond layer 320 to a baseplate 318 including cooling channels 322 for receiving cooling fluid. In some examples, the top plate 312 is cylindrical. In other examples, the top plate 312 includes a cylindrical inner portion 314 and an annular step portion 316 extending radially outwardly from a lower and radially outer edge thereof.

[0060] A top edge ring 340 includes a first horizontal surface 344 extending in a plane located above a plane including a top surface of the substrate 310. The first horizontal surface 344 extends to an upper end of a sloped surface 346 extending downwardly and radially inwardly from the first horizontal surface 344 to a second horizontal surface 348 located in a plane below a plane including a top surface of the top plate 312. A first vertical surface 352 extends downwardly from a radially inner edge of the second horizontal surface 348 to a radially inner edge of a third horizontal surface 356 extending radially outwardly. A second vertical surface 358 extends downwardly from the third horizontal surface 356 to a fourth horizontal surface 362. A third vertical surface 364 extends upwardly from the fourth horizontal surface 362 to an annular groove 366 located at a radially upper and outer side of the top edge ring 340.

[0061] A thermal interface material (TIM) 373 may be arranged between the third horizontal surface 356 and the ceramic layer. Rather than using a thermal interface material including a body made of metal such as aluminum (which increases conductivity), the body of the TIM 373 includes a non-metallic material such as polyimide (e.g., a Kapton layer) to reduce conductivity in this area.

[0062] A ring 380 is located below the top edge ring 340 and includes an annular body. A first horizontal surface 382 extends radially outwardly to a first vertical surface 384 extending downwardly to a second horizontal surface 386. The second horizontal surface 386 extends radially inwardly to a second vertical surface 388. An upper and radially inner end of the ring 380 includes an annular projection 389 extending axially above the fourth horizontal surface 362 (e.g., between the second vertical surface 358 and a radially outer surface of the baseplate 318). In some examples, the annular projection 389 extends to the third horizontal surface 356 of the top edge ring 340.

[0063] A ring 390 is located radially outside of the top edge ring 340. The ring 390 includes an annular body including a first horizontal surface 392 and a first verticalAttorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA surface 394 extending downwardly from the first vertical surface 394. An annular groove 395 may be located between the first horizontal surface 392 and the first vertical surface 394. A second horizontal surface 396 extends radially inwardly to a second vertical surface 398, The second vertical surface 398 extends upwardly to a horizontal surface 402 extending radially inwardly to a third vertical surface 404 connected to the first horizontal surface 392.

[0064] In some examples, the ring 390 includes an annular projection 406 overlapping and extending into the annular groove 366 of the top edge ring 340. The second vertical surface 358 and the fourth horizontal surface 362 of the top edge ring 340 are arranged adjacent to the annular projection 406 and the first horizontal surface 382 of the ring 380 to provide capacitive coupling.

[0065] A radial width w1 is defined between the second vertical surface 358 and a vertical surface in the annular groove 366. A radial width w2 is defined between the first vertical surface 352 and the vertical surface of the annular groove 366. A radial width w3 is defined between the second vertical surface 358 and the third vertical surface 364. In some examples, the width w1 is in a range from 25% to 35% of w2. In some examples, the width w1 is greater than 50% of w3. In some examples, the width w1 is greater than 60% of w3.

[0066] In FIG. 5, dimensions of a top edge ring 440 can be adjusted to further reduce coupling in addition to or instead of other approaches described herein. A top edge ring 440 includes a first horizontal surface 444 extending in a plane located above a plane including a top surface of the substrate 310. The first horizontal surface 444 extends to an upper end of a sloped surface 446 extending downwardly and radially inwardly from the first horizontal surface 444 to a second horizontal surface 448 located in a plane below a plane including a top surface of the top plate 312. A vertical surface 452 extends downwardly from a radially inner edge of the second horizontal surface 448 to a radially inner edge of a third horizontal surface 456 extending radially outwardly. A second vertical surface 458 extends downwardly from the third horizontal surface 456 to a fourth horizontal surface 462. A third vertical surface 464 extends upwardly from the fourth horizontal surface 462 to an annular groove 466 located at a radially upper and outer side of the top edge ring 440.

[0067] Dimensions of a ring 490 located radially outside of the top edge ring 440 are adjusted accordingly. The ring 490 includes an annular body including a first horizontalAttorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA surface 492 and a first vertical surface 494 extending downwardly from the first vertical surface 494. An annular groove 495 may be located between the first horizontal surface 492 and the first vertical surface 494. A second horizontal surface 496 extends radially inwardly to a second vertical surface 498, The second vertical surface 498 extends upwardly to a horizontal surface 502 extending radially inwardly to a third vertical surface 504 connected to the first horizontal surface 492. The ring 490 includes an annular projection 506 overlapping and extending into the annular groove 466 of the top edge ring 440. A radial width of the annular projection 506 decreased relative to FIG. 4.

[0068] A radial widthis defined between the second vertical surface 458 and a vertical surface in the annular groove 466. A radial width w2 is defined between the vertical surface 452 and a vertical surface in the annular groove 466. A radial width w3 is defined between the second vertical surface 458 and the third vertical surface 464. In some examples, the width w4 is in a range from 10% to 20% of w2. In some examples, the width w4 is less than 40% of w3. In some examples, the width w4 is less than 30% of w3.

[0069] In some examples, the top edge ring 440 is mechanically clamped and / or fastened at N locations that are spaced 360Q / N where N is an integer greater than two. Referring now to FIG. 6A, an example of a mechanical clamping system is shown, although other types can be used. The top edge ring 440 can be attached to the ring 380 using a male fastener 620. The ring 380 includes a vertical bore 624 extending from a bottom surface thereof to a cavity 628 extending between the vertical bore 624 and the first horizontal surface 382. A bottom surface of the top edge ring 440 includes a cavity 632 axially aligned with the cavity 628. A female fastener 638 including a threaded bore is arranged in the cavity 628 and includes a threaded cavity to receive the male fastener 620.

[0070] Referring now to FIG. 6B, the ring 380 is shown at another cross section offset from FIG. 6A. The ring 380 includes a vertical bore 650 extending from a bottom surface thereof to a cavity 654 extending radially inwardly from a radially outer side thereof. A head 662 of a clamping shaft 658 is engaged by an attachment fixture 664 arranged in the cavity 654. The ring 380 is pulled in a downward direction by the clamping shaft 658. The ring 380 is attached to the top edge ring 440 by the male fastener 620. Therefore, the top edge ring 440 is clamped in a downward direction to enhance RF and / or thermal coupling.Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA

[0071] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with features of any of the other embodiments, even if that combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.

[0072] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0073] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform, or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperatureAttorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0074] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, non-transitory memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0075] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the typeAttorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA of tool that the controller is configured to interface with or control. Thus as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0076] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0077] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POACLAIMSWhat is claimed is:1 . A plasma processing system comprising: a substrate support configured to support a substrate and including a baseplate and a top ceramic plate; a top edge ring arranged around the top ceramic plate and including an annular body with a first horizontal surface, a first sloped surface extending downwardly and radially inwardly from the first horizontal surface, and a second horizontal surface extending radially inwardly from the first sloped surface; and an upper electrode arranged above the substrate support including an inner circular horizontal surface, a second sloped annular surface surrounding and extending downwardly and radially outwardly from the inner circular horizontal surface, and an annular horizontal surface surrounding the second sloped annular surface, wherein a transition between the inner circular horizontal surface and the second sloped annular surface is located radially outside of a radially outer edge of the first sloped surface of the top edge ring.

2. The plasma processing system of claim 1 , further comprising: a ceramic layer including a flat annular body and a resistive heater embedded therein, wherein the ceramic layer is arranged between the top edge ring and a top surface of the baseplate.

3. The plasma processing system of claim 2, further comprising a thermal interface material arranged between the top edge ring and the ceramic layer.

4. The plasma processing system of claim 3, wherein the thermal interface material includes a carrier made of a non-metallic material.

5. The plasma processing system of claim 3, wherein the thermal interface material includes a carrier made of a polyimide.Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA6. The plasma processing system of claim 1 , wherein the annular body of the top edge ring further includes: a first vertical surface extending downwardly adjacent to the top ceramic plate; a third horizontal surface extending radially outwardly from the first vertical surface; a second vertical surface extending downwardly from the third horizontal surface; a fourth horizontal surface extending radially outwardly from the second vertical surface; a third vertical surface extending upwardly from the third horizontal surface; and an annular groove arranged on an upper and radially outer edge of the top edge ring, wherein the annular groove includes a fifth horizontal surface and a fourth vertical surface.

7. The plasma processing system of claim 6, wherein: a first radial width is defined between the second vertical surface and the fourth vertical surface, a second radial width is defined between the first vertical surface and the fourth vertical surface, and wherein a ratio of the first radial width to the second radial width is in a range from 10% to 20%.

8. The plasma processing system of claim 6, wherein: a first radial width is defined between the second vertical surface and the third vertical surface, a second radial width is defined between the first vertical surface and the fourth vertical surface, and wherein a ratio of the first radial width to the second radial width is less than 40%.

9. The plasma processing system of claim 2, wherein: the top ceramic plate includes a cylindrical inner portion and an annular step, and a radially inner edge of the top ceramic plate overlaps a horizontal surface of the annular step.Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA10. The plasma processing system of claim 9, further comprising: a first seal arranged between the annular step of the top ceramic plate and the ceramic layer; and a second seal arranged between a bottom surface of the ceramic layer and an upper and radially outer edge of the baseplate.

11. A plasma processing system comprising: a substrate support configured to support a substrate and including a baseplate and a top ceramic plate; a top edge ring arranged around the top ceramic plate; a ceramic layer including a flat annular body and a resistive heater embedded therein, wherein the ceramic layer is arranged between the top edge ring and a top surface of the baseplate; and a thermal interface material arranged between the top edge ring and the ceramic layer, wherein the thermal interface material includes a carrier made of a non-metallic material.

12. The plasma processing system of claim 11 , wherein the thermal interface material includes a carrier made of a polyimide.

13. The plasma processing system of claim 11 , wherein the top edge ring includes an annular body with a first horizontal surface, a first sloped surface extending downwardly and radially inwardly from the first horizontal surface, and a second horizontal surface extending radially inwardly from the first sloped surface.

14. The plasma processing system of claim 13, further comprising: an upper electrode arranged above the substrate support including an inner circular horizontal surface, a second sloped annular surface surrounding and extending downwardly and radially outwardly from the inner circular horizontal surface, and an annular horizontal surface surrounding the second sloped annular surface, wherein a transition between the inner circular horizontal surface and the second sloped annular surface is located radially outside of a radially outer edge of the first sloped surface of the top edge ring.Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA15. The plasma processing system of claim 13, wherein the annular body of the top edge ring further includes: a first vertical surface extending downwardly adjacent to the top ceramic plate; a third horizontal surface extending radially outwardly from the first vertical surface; a second vertical surface extending downwardly from the third horizontal surface; a fourth horizontal surface extending radially outwardly from the second vertical surface; a third vertical surface extending upwardly from the third horizontal surface; and an annular groove arranged on an upper and radially outer edge of the top edge ring, wherein the annular groove includes a fifth horizontal surface and a fourth vertical surface.

16. The plasma processing system of claim 15, wherein: a first radial width is defined between the second vertical surface and the fourth vertical surface, a second radial width is defined between the first vertical surface and the fourth vertical surface, and wherein a ratio of the first radial width to the second radial width is in a range from 10% to 20%.

17. The plasma processing system of claim 15, wherein: a first radial width is defined between the second vertical surface and the third vertical surface, a second radial width is defined between the first vertical surface and the fourth vertical surface, and wherein a ratio of the first radial width to the second radial width is less than 40%.

18. The plasma processing system of claim 1 1 , wherein: the top ceramic plate includes a cylindrical inner portion and an annular step, and a radially inner edge of the top ceramic plate overlaps a horizontal surface of the annular step.Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA19. The plasma processing system of claim 18, further comprising: a first seal arranged between the annular step of the top ceramic plate and the ceramic layer; and a second seal arranged between a bottom surface of the ceramic layer and an upper and radially outer edge of the baseplate.

20. A top edge ring for a plasma processing system, comprising: an annular body; a first horizontal surface; a first sloped surface extending downwardly and radially inwardly from the first horizontal surface; a second horizontal surface extending radially inwardly from the first sloped surface; a first vertical surface extending downwardly; a third horizontal surface extending radially outwardly from the first vertical surface; a second vertical surface extending downwardly from the third horizontal surface; a fourth horizontal surface extending radially outwardly from the second vertical surface; a third vertical surface extending upwardly from the third horizontal surface; and an annular groove arranged on an upper and radially outer edge of the top edge ring, wherein the annular groove includes a fifth horizontal surface and a fourth vertical surface, wherein a first radial width is defined between the second vertical surface and the fourth vertical surface, wherein a second radial width is defined between the first vertical surface and the fourth vertical surface, and wherein a ratio of the first radial width to the second radial width is in a range from 10% to 20%.Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA21 . The top edge ring of claim 20, wherein: a first radial width is defined between the second vertical surface and the third vertical surface, a second radial width is defined between the first vertical surface and the fourth vertical surface, and wherein a ratio of the first radial width to the second radial width is less than 40%.

22. A plasma processing system comprising: the top edge ring of claim 20; a substrate support configured to support a substrate and including a baseplate and a top ceramic plate, wherein the top edge ring is arranged around the top ceramic plate; a ceramic layer including a flat annular body and a resistive heater embedded therein, wherein the ceramic layer is arranged between the top edge ring and a top surface of the baseplate; and a thermal interface material arranged between the top edge ring and the ceramic layer.

23. The plasma processing system of claim 22, wherein the thermal interface material includes a carrier made of a non-metallic material.

24. The plasma processing system of claim 23, wherein the thermal interface material includes a carrier made of a polyimide.

25. The plasma processing system of claim 22, further comprising: an upper electrode arranged above the substrate support including an inner circular horizontal surface, a second sloped annular surface surrounding and extending downwardly and radially outwardly from the inner circular horizontal surface, and an annular horizontal surface surrounding the second sloped annular surface, wherein a transition between the inner circular horizontal surface and the second sloped annular surface is located radially outside of a radially outer edge of the first sloped surface of the top edge ring.Attorney Docket No. 12064-1 WOHDP Ref. No. 15545-001305-WO-POA26. The plasma processing system of claim 22, wherein: the top ceramic plate includes a cylindrical inner portion and an annular step, and a radially inner edge of the top ceramic plate overlaps a horizontal surface of the annular step.

27. The plasma processing system of claim 26, further comprising: a first seal arranged between the annular step of the top ceramic plate and the ceramic layer; and a second seal arranged between a bottom surface of the ceramic layer and an upper and radially outer edge of the baseplate.

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