Ultraviolet sensor based on semiconductor packaging, packaging method, and structure

Abstract

The present invention relates to the technical field of ultraviolet sensors, and in particular, to an ultraviolet sensor based on semiconductor packaging, a packaging method, and a structure. The structure provided by the present invention mainly comprises an ultraviolet sensor based on semiconductor packaging and a packaging structure, and further comprises a packaging unit. The packaging unit comprises a positive electrode and a ceramic plate arranged at the bottom of the positive electrode. A metal plate is arranged below the positive electrode and the ceramic plate, a base is arranged below the metal plate, and four corners of the base are respectively provided with micro-welding wires for connecting to external connection leads. The above structure provides good support for two electrodes, so that shaking or bending of the electrodes does not occur due to a change in temperature, thereby enabling the electrodes to withstand a higher degree of vibration. In addition, the structure provided in the present solution enables a gap to be more accurately formed between the electrodes.

Description

A semiconductor-packaged ultraviolet sensor, its packaging method, and its structure. Technical Field

[0001] This invention relates to the field of ultraviolet sensor technology, and more specifically, to an ultraviolet sensor based on semiconductor packaging, as well as a packaging method and structure. Background Technology

[0002] Ultraviolet (UV) sensors are devices that detect ultraviolet radiation and are widely used in environmental monitoring, medicine, agriculture, and other fields. Ultraviolet radiation is classified into three types: UVA, UVB, and UVC. UV sensors typically rely on principles such as the photoelectric effect, fluorescence effect, or thermal effect to detect UV radiation. Currently, common UV sensors on the market include photodiodes, photovoltaic cells, and photomultiplier tubes. These sensors can not only monitor UV intensity in real time but also perform more in-depth analysis through data processing techniques.

[0003] In existing photoelectric methods for fabricating UV sensors, traditional methods require highly skilled quartz tube handling. Quartz tubes are fragile, and the production process is labor-intensive. Manufacturers need to manufacture several UV sensors and then classify each sensor into different attenuation levels. It is difficult to ensure consistent electrode spacing. Due to the quartz tube manufacturing process, it is difficult to minimize the design of UV sensors. They cannot withstand high vibrations. Summary of the Invention

[0004] The purpose of this invention is to provide a semiconductor-packaged ultraviolet sensor and its packaging method and structure to solve the above-mentioned problems in the prior art.

[0005] The embodiments of the present invention are achieved through the following technical solutions:

[0006] A semiconductor-packaged ultraviolet sensor includes a grid electrode and a flat electrode, wherein the grid electrode and the flat electrode are connected by an insulating block, and the insulating block is used to create a gap between the grid electrode and the flat electrode.

[0007] The grid electrode and the flat electrode are provided with an encapsulation shell, and the encapsulation shell is used to fill the gap between the grid electrode and the flat electrode with inert gas.

[0008] It also includes an electrical power supply device, which is connected to the grid electrode and the electrical measuring device respectively, and the electrical measuring device is connected to the flat electrode.

[0009] Secondly, the present invention provides a semiconductor-packaged ultraviolet sensor packaging structure, including the above-mentioned semiconductor-packaged ultraviolet sensor, and further including a packaging unit. The packaging unit includes a positive electrode and a ceramic plate disposed at the bottom of the positive electrode. A metal plate is disposed below the ceramic plate, and a substrate is disposed below the metal plate. A first wire and a second wire are disposed on the substrate. The first wire is connected to the positive electrode, and the second wire is connected to the metal plate.

[0010] Preferably, an encapsulation housing is disposed above the substrate, and the encapsulation housing is disposed around the metal plate.

[0011] Preferably, a cover plate is also provided on the top of the encapsulation housing.

[0012] Preferably, it also includes a packaging and aligning module, which includes a carrier plate on which a plurality of packaging units are disposed.

[0013] Preferably, the positive electrode is a metal mesh structure.

[0014] Preferably, the ceramic plate has a hollow structure.

[0015] Preferably, the cover plate is made of a transparent material.

[0016] Thirdly, the present invention also provides a semiconductor-packaged ultraviolet sensor packaging method, including the above-mentioned semiconductor-packaged ultraviolet sensor packaging structure, and further comprising:

[0017] The positive electrode is used as the grid electrode of the ultraviolet sensor, the metal plate is used as the flat electrode of the ultraviolet sensor, and the ceramic plate is used as the insulating block between the grid electrode and the flat electrode.

[0018] The core circuit of the ultraviolet sensor is placed on a ceramic plate, and molten metal contacts and leads are integrated into the core circuit.

[0019] Connect the positive electrode to one wire and the metal plate to another wire to form a surface-mount integrated chip ultraviolet sensor;

[0020] The UV sensor is placed inside the encapsulation housing, and the entire encapsulation housing containing the UV sensor is placed into a pressure-controlled gas chamber. The encapsulation housing is then sealed with a cover plate.

[0021] The technical solutions of the embodiments of the present invention have at least the following advantages and beneficial effects:

[0022] The structure provided by this invention mainly includes a semiconductor-packaged ultraviolet sensor and packaging structure, and also includes a packaging unit. The packaging unit includes a positive electrode and a ceramic plate disposed at the bottom of the positive electrode. A metal plate is disposed below the positive electrode and the ceramic plate, and a substrate is disposed below the metal plate. Micro-welding wires for connecting to external access leads are respectively disposed at the four corners of the substrate. This structure provides good support for the two electrodes, preventing them from jumping or bending due to temperature changes, thus enabling them to withstand higher vibrations. Furthermore, the structure provided by this solution allows for more precise fabrication of the electrode gap. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 is a schematic diagram of the structure of the ultraviolet sensor of the present invention;

[0025] Figure 2 is a schematic diagram of the packaging structure of the present invention;

[0026] Figure 3 is a schematic diagram of the packaging shell of the present invention.

[0027] Icons: 1-Grid electrode, 2-Flat electrode, 3-Insulating block, 4-Encapsulation housing, 5-Power supply device, 6-Electrical measuring device, 7-Positive electrode, 8-Ceramic plate, 9-First conductor, 10-Metal plate, 11-Substrate, 12-Second conductor, 13-Cover plate. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0029] Please refer to Figures 1-3. A semiconductor-packaged ultraviolet sensor includes a grid electrode 1 and a flat electrode 2. The grid electrode 1 and the flat electrode 2 are connected by an insulating block 3, which is used to create a gap between the grid electrode 1 and the flat electrode 2.

[0030] The grid electrode 1 has a hollow structure, allowing light to pass through. Grid electrode 1 serves as the positive electrode 7 of the ultraviolet sensor, while the flat electrode 2 serves as the negative electrode. The insulating block 3 is made of insulating material and is used to create a gap between the grid electrode and the flat electrode 2.

[0031] An encapsulation housing 4 is provided outside the grid electrode 1 and the flat electrode 2. The encapsulation housing 4 is used to fill the gap between the grid electrode 1 and the flat electrode 2 with inert gas.

[0032] It also includes an electric power supply device 5, which is connected to the grid electrode 1 and the electric measuring device 6 respectively, and the electric measuring device 6 is connected to the flat electrode 2.

[0033] The power supply device 5 can apply a positive voltage to the grid electrode 1 and a negative voltage to the flat electrode 2, which can be made of pure nickel. The electrical measuring device 6 determines whether the ultraviolet sensor is active.

[0034] When the ultraviolet sensor provided by this invention is working, an electric field is generated when a voltage is applied to the electrode pair formed by the grid electrode 1 and the flat electrode 2. The electric field strength is =Volt / G (unit is volts / meter). The smaller the gap, the higher the electric field strength generated.

[0035] Exposing the gas to a high electric field causes it to arch. By adjusting the voltage and gap distance, the gas can be brought into a pre-ionized state (electric field strength before ionization). When ultraviolet light irradiates the flat electrode 2, a small number of electrons are emitted due to the photoelectric effect. The emission of these small number of electrons triggers an avalanche effect of current (gas ionization).

[0036] The structure provided by this invention mainly includes a semiconductor-packaged ultraviolet sensor and packaging structure, and also includes a packaging unit. The packaging unit includes a positive electrode 7 and a ceramic plate 8 disposed at the bottom of the positive electrode 7. A metal plate 10 is disposed below the positive electrode 7 and the ceramic plate 8, and a substrate 11 is disposed below the metal plate 10. Micro-welding wires for connecting to external access leads are respectively disposed at the four corners of the substrate 11. Through the above structure, the two electrodes are given good support, so that the electrodes will not jump or bend due to temperature changes, and thus can withstand higher vibrations. In addition, the structure set by this solution can more accurately manufacture the electrode gap.

[0037] Secondly, the present invention also provides a semiconductor-packaged ultraviolet sensor packaging structure, including the above-mentioned semiconductor-packaged ultraviolet sensor, and further including a packaging unit. The packaging unit includes a positive electrode 7 and a ceramic plate 8 disposed at the bottom of the positive electrode 7. A metal plate 10 is disposed below the ceramic plate 8, and a substrate 11 is disposed below the metal plate 10. A first wire 9 and a second wire 12 are disposed on the substrate 11. The first wire 9 is connected to the positive electrode 7, and the second wire 12 is connected to the metal plate 10.

[0038] Among them, the positive electrode 7 is a metal mesh structure, which is equivalent to the grid electrode 1 in the ultraviolet sensor mentioned above, and the metal plate 10 is made of pure nickel, which is equivalent to the flat electrode 2 in the ultraviolet sensor mentioned above, and is the negative electrode.

[0039] The ceramic plate 8 has a hollow structure and acts as an insulating block 3 to create gaps, compensating for the precision gaps required to control the necessary electric field strength. A gas that can achieve current avalanche using a lower voltage can be selected.

[0040] Meanwhile, using thin hollow ceramic as a gap can prevent the gap distance from shifting, providing good support for the two electrodes and preventing the electrodes from jumping or bending due to temperature changes.

[0041] The function of the first wire 9 and the second wire 12 is to connect the positive electrode 7 and the metal plate 10 to the outside.

[0042] In one exemplary embodiment of the present invention, an encapsulation housing 4 is disposed above the substrate 11, and the encapsulation housing 4 is disposed around the metal plate 10.

[0043] In addition, a cover plate 13 is provided on the top of the encapsulation housing 4, and the cover plate 13 is made of transparent material.

[0044] An exemplary embodiment of the present invention further includes a packaging and aligning module, the packaging and aligning module including a carrier plate on which a plurality of packaging units are disposed.

[0045] Thirdly, the present invention also provides a semiconductor-packaged ultraviolet sensor packaging method, including the above-mentioned semiconductor-packaged ultraviolet sensor packaging structure, and further comprising:

[0046] The positive electrode 7 is used as the grid electrode 1 of the ultraviolet sensor, the metal plate 10 is used as the flat electrode 2 of the ultraviolet sensor, and the ceramic plate 8 is used as the insulating block 3 between the grid electrode 1 and the flat electrode 2.

[0047] The core circuit of the ultraviolet sensor is placed on the ceramic plate 8, and molten metal contacts and leads are integrated into the core circuit.

[0048] Connect the positive electrode 7 to one wire and the metal plate 10 to another wire to form a surface-mount integrated chip ultraviolet sensor.

[0049] The ultraviolet sensor is placed in the encapsulation housing 4, and the entire encapsulation housing 4 containing the ultraviolet sensor is placed in a pressure-controlled gas chamber, and the encapsulation housing 4 is sealed with a cover plate 13.

[0050] Ultraviolet radiation will pass through the quartz window with very little loss. The quartz window will be glued to the edge of the encapsulation housing. By design, the appropriate pressure and type of gas mixture can be selected to match the design voltage breakdown, allowing for the photocurrent avalanche effect of our ultraviolet sensor.

[0051] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A semiconductor package-based ultraviolet sensor, characterized by comprising: It includes a grid electrode (1) and a flat electrode (2), the grid electrode (1) and the flat electrode (2) are connected by an insulating block (3), the insulating block (3) is used to create a gap between the grid electrode (1) and the flat electrode (2); An encapsulation housing (4) is provided outside the grid electrode (1) and the flat electrode (2), and the encapsulation housing (4) is used to fill the gap between the grid electrode (1) and the flat electrode (2) with inert gas. It also includes an electric power supply device (5), which is connected to the grid electrode (1) and the electric measuring device (6) respectively, and the electric measuring device (6) is connected to the flat electrode (2).

2. A semiconductor package-based ultraviolet sensor package structure, characterized by comprising: The ultraviolet sensor based on semiconductor packaging as described in claim 1 further includes a packaging unit, the packaging unit including a positive electrode (7) and a ceramic plate (8) disposed at the bottom of the positive electrode (7), a metal plate (10) disposed below the ceramic plate (8), a substrate (11) disposed below the metal plate (10), a first wire (9) and a second wire (12) disposed on the substrate (11), the first wire (9) being connected to the positive electrode (7), and the second wire (12) being connected to the metal plate (10).

3. The ultraviolet sensor package structure based on semiconductor package according to claim 2, wherein, An encapsulation housing (4) is disposed above the substrate (11), and the encapsulation housing (4) is disposed around the metal plate (10).

4. The ultraviolet sensor package structure based on semiconductor package according to claim 3, wherein, A cover plate (13) is also provided on the top of the encapsulation housing (4).

5. The ultraviolet sensor package structure based on semiconductor package according to claim 3, wherein, It also includes a packaging and aligning module, which includes a carrier plate on which a plurality of packaging units are disposed.

6. The ultraviolet sensor package structure based on semiconductor package according to claim 3, wherein, The positive electrode (7) has a metal mesh structure.

7. The ultraviolet sensor package structure based on semiconductor package according to claim 3, wherein, The ceramic plate (8) has a hollow structure.

8. The ultraviolet sensor package structure based on semiconductor package according to claim 4, wherein, The cover plate (13) is made of transparent material.

9. A method of packaging an ultraviolet sensor based on a semiconductor package, characterized by, The ultraviolet sensor packaging structure based on semiconductor packaging, as described in any one of claims 2-8, further includes: The positive electrode (7) is used as the grid electrode (1) of the ultraviolet sensor, the metal plate (10) is used as the flat electrode (2) of the ultraviolet sensor, and the ceramic plate (8) is used as the insulating block (3) between the grid electrode (1) and the flat electrode (2). The core circuit of the ultraviolet sensor is placed on a ceramic plate (8), and molten metal contacts and leads are integrated into the core circuit. Connect the positive electrode (7) to a wire and connect the metal plate (10) to another wire to form a surface-mount integrated chip ultraviolet sensor; The ultraviolet sensor is placed in the encapsulation housing (4), and the entire encapsulation housing (4) containing the ultraviolet sensor is placed in a pressure-controlled gas chamber, and the encapsulation housing (4) is sealed with a cover plate (13).

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