Hybrid sensor, camera module, and electronic device

Abstract

The present application relates to the field of sensors. Disclosed are a hybrid sensor, a camera module, and an electronic device. The hybrid sensor comprises: a second photosensitive layer and a first photosensitive layer, which are arranged in sequence in a thickness direction in one pixel region corresponding to the second photosensitive layer, wherein the second photosensitive layer and the first photosensitive layer are both used for receiving light rays and generating charges, and the charges generated by the first photosensitive layer and the second photosensitive layer are used for implementing RGB imaging and / or event signal monitoring. On the basis of the solutions of the present application, both an event signal monitoring function and an imaging function can be implemented in the same pixel of the same sensor, with no parallax and without affecting photosensitivity or resolution; and no motion blur is generated even when a high-speed moving photographed object is to be photographed in a dark-light scenario.

Description

Hybrid sensors, camera modules and electronic devices

[0001] This application claims priority to Chinese patent application filed on October 23, 2024, with application number 202411495826.X and entitled "Hybrid Sensor, Camera Module and Electronic Device", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of sensors, and more specifically, to a hybrid sensor, camera module, and electronic device. Background Technology

[0003] An Event-Based Vision Sensor (EVS) is a novel type of vision sensor, unlike traditional frame-based image sensors. EVS can asynchronously detect changes in brightness (i.e., changes in light intensity) of each pixel and outputs data only when pixel brightness changes. This data includes the pixel's coordinates, the time of the change, and the polarity of the change (i.e., whether brightness increases or decreases), forming an event stream rather than a frame stream. Therefore, this type of sensor is called an "event-based" vision sensor.

[0004] However, in related electronic devices, when EVS is used in conjunction with RGB sensors for imaging, problems such as field of view (FOV) difference and time alignment will exist because EVS and RGB sensors are two independent sensors. Therefore, a new solution is urgently needed to solve the above problems. Summary of the Invention

[0005] This application provides a hybrid sensor, camera module, and electronic device. By employing a two-layer photosensitive layer stacking technology, event signal monitoring and imaging functions can be simultaneously realized in the same pixel of the same sensor. Furthermore, there is no viewing angle difference, and it does not affect sensitivity and resolution. When shooting high-speed moving objects in low-light scenes, no motion blur will occur.

[0006] To achieve the above objectives, this application adopts the following technical solution:

[0007] In a first aspect, embodiments of this application provide a hybrid sensor in which a second photosensitive layer and a first photosensitive layer are arranged sequentially along the thickness direction in a pixel region corresponding to the second photosensitive layer. Both the second photosensitive layer and the first photosensitive layer are used to receive light and generate charge. The charge generated by the first photosensitive layer and the second photosensitive layer is used to realize RGB imaging and / or event signal monitoring.

[0008] In this embodiment, by employing a two-layer photosensitive layer stacking technique, one photosensitive layer is used to realize RGB imaging, and the other photosensitive layer is used to realize event signal monitoring. Thus, event signal monitoring and imaging functions can be realized simultaneously in the same pixel of the same sensor, and there is no viewing angle difference, no impact on sensitivity and resolution. In addition, it can also be applied to low-light scenes, and no motion blur will occur when shooting fast-moving subjects.

[0009] In conjunction with the first aspect, in some implementations of the first aspect, the hybrid sensor further includes: a first electrode located above the second photosensitive layer and a second electrode located below the second photosensitive layer; wherein the first electrode is laid as a whole layer and the second electrode is laid at intervals.

[0010] In this embodiment, the second electrode can be laid at intervals according to the pixel size corresponding to the second photosensitive layer, or the second electrode can be laid at intervals with smaller sizes, and the number of corresponding pixels is a multiple of n2 of the number of pixels corresponding to the second photosensitive layer.

[0011] In conjunction with the first aspect, in some implementations of the first aspect, the hybrid sensor further includes: a metal wiring layer located above or below the first photosensitive layer; wherein the metal wiring layer includes an RGB readout circuit and an event readout circuit, the RGB readout circuit being used to convert the charge generated by the first photosensitive layer into an RGB data stream and output it, and the event readout circuit being used to convert the charge generated by the second photosensitive layer into an event data stream and output it.

[0012] For example, as shown in Embodiment 1 below, the metal wiring layer is located above the first photosensitive layer, or as shown in Embodiment 2 below, the metal wiring layer is located below the first photosensitive layer.

[0013] It should be understood that, in the embodiments of this application, the event readout circuit in the metal wiring layer is connected to the second electrode of the second photosensitive layer.

[0014] In Example 1, since the front-illuminated hybrid sensor structure does not involve through-silicon via (TSV) technology, its fabrication difficulty and cost are relatively low. In Example 2, because the aperture ratio of the first photosensitive layer is relatively larger, the generated signal quality is better.

[0015] In conjunction with the first aspect, in some implementations of the first aspect, in a pixel region corresponding to the second photosensitive layer, the number of pixels corresponding to the first photosensitive layer is n² times the number of pixels corresponding to the second photosensitive layer, where n is an integer greater than or equal to 1.

[0016] For example, when n is 2, it is as shown in Examples 5 and 6 below.

[0017] In conjunction with the first aspect, in some implementations of the first aspect, the metal wiring layer includes a plurality of the RGB readout circuits, and each pixel corresponding to the first photosensitive layer is connected to one of the RGB readout circuits; the charge generated by each pixel corresponding to the first photosensitive layer is output separately through the connected RGB readout circuits, or the charge generated by each pixel corresponding to the first photosensitive layer is output after being combined by the plurality of the RGB readout circuits.

[0018] For example, when n is 2, the output is shown in Example 5 below when the output is given separately, and the output is shown in Example 6 below when the output is combined.

[0019] In Examples 5 and 6, without changing the pixel size of the second photosensitive layer, by modifying the pixel size of the first photosensitive layer 11, the number of pixels corresponding to the first photosensitive layer is increased to a multiple of n² of the number of pixels corresponding to the second photosensitive layer, where n is an integer greater than or equal to 2. This allows the hybrid sensor to achieve higher image resolution when implementing RGB imaging and higher photosensitivity when implementing event signal monitoring.

[0020] In conjunction with the first aspect, in some implementations of the first aspect, the number of pixels corresponding to the second electrode is the same as the number of pixels corresponding to the first photosensitive layer, and each pixel corresponding to the second electrode is connected to one of the event readout circuits; the charge generated by each pixel corresponding to the second electrode is output separately through the connected event readout circuits.

[0021] For example, when it is 4 times, it is as shown in Example 6 below.

[0022] In Example 6, by modifying the number of pixels corresponding to the second electrode and the first photosensitive layer, the number of pixels corresponding to the second electrode and the first photosensitive layer is increased to a multiple of n², where n is an integer greater than or equal to 2. Each pixel corresponding to the second electrode corresponds to an event readout circuit, and multiple pixels corresponding to the first photosensitive layer share a single RGB imaging circuit. This improves the event readout speed and optimizes noise in RGB imaging.

[0023] In conjunction with the first aspect, in some implementations of the first aspect, when the metal wiring layer is located below the first photosensitive layer, the metal wiring layer further includes: a first metal line disposed in a through-hole penetrating the first photosensitive layer, the first metal line being used to connect the second electrode and the event readout circuit.

[0024] For example, as shown in Example 3 below.

[0025] In Example 3, the charges of the two photosensitive layers cannot be combined and read out; only one photosensitive layer is used to realize the RGB imaging function or the event signal monitoring function.

[0026] In conjunction with the first aspect, in some implementations of the first aspect, the second electrode includes a first sub-electrode and a second sub-electrode located on the same layer, the first sub-electrode being used to store the charge generated by the second photosensitive layer, and the second sub-electrode being used to transfer the charge generated by the second photosensitive layer.

[0027] For example, as shown in Example 4 below.

[0028] In embodiment 4, the second electrode can be divided into two sub-electrodes for storing and transmitting charge. Therefore, the charge storage time can be precisely controlled by the voltage on the sub-electrodes. This precise voltage control of the charge storage time in the photosensitive layer allows subsequent RGB imaging circuitry to use correlated double sampling (CDS) technology for noise reduction, improving image quality. In other embodiments where the second electrode is not divided into two, CDS technology cannot be used in RGB-only mode.

[0029] In conjunction with the first aspect, in some implementations of the first aspect, the hybrid sensor further includes: a third electrode located above the first photosensitive layer and a fourth electrode located below the first photosensitive layer;

[0030] The fourth electrode includes a third sub-electrode and a fourth sub-electrode located on the same layer. The third sub-electrode is used to store the charge generated by the first photosensitive layer, and the fourth sub-electrode is used to transmit the charge generated by the first photosensitive layer.

[0031] The metal wiring layer is located below the fourth electrode. The metal wiring layer further includes a second metal line disposed in a through hole penetrating the third electrode, the first photosensitive layer and the fourth sub-electrode. The second metal line is used to connect the second sub-electrode, the fourth sub-electrode and the event readout circuit.

[0032] For example, as shown in Example 9 below.

[0033] In Example 9, the charges of the two photosensitive layers can be combined and read out to realize RGB imaging function or event signal monitoring function.

[0034] In conjunction with the first aspect, in some implementations of the first aspect, the hybrid sensor further includes: a color filter layer located above the first electrode, the color filter layer comprising a plurality of filters for absorbing different colors.

[0035] For example, a filter may include a filter that absorbs red, absorbs green, and absorbs blue.

[0036] In conjunction with the first aspect, in some implementations of the first aspect, the hybrid sensor further includes: a color filter layer located below the second electrode, the color filter layer comprising a plurality of filters for absorbing different colors.

[0037] Examples are shown in Examples 7 and 8 below.

[0038] In conjunction with the first aspect, in some implementations of the first aspect, the charge generated by the second photosensitive layer is used to monitor event signals, and the charge generated by the first photosensitive layer is used to achieve RGB imaging.

[0039] For example, as shown in Example 7 below.

[0040] In conjunction with the first aspect, in some implementations of the first aspect, the second photosensitive layer corresponding to different pixel regions is used to receive light of different colors; in the same pixel region, the color of the light received by the second photosensitive layer is complementary to the color of the light absorbed by the filter; the charge generated by the second photosensitive layer is used to monitor event signals, and the charge generated by the first photosensitive layer is used to achieve RGB imaging; or, the charge generated by the second photosensitive layer is used to achieve RGB imaging, and the charge generated by the first photosensitive layer is used to monitor event signals.

[0041] For example, as shown in Example 8 below.

[0042] In conjunction with the first aspect, in some implementations of the first aspect, the photosensitive material of the second photosensitive layer is an organic material, an inorganic or organic quantum dot thin film material, or a perovskite thin film material.

[0043] In conjunction with the first aspect, in some implementations of the first aspect, the material of the first photosensitive layer is silicon.

[0044] In conjunction with the first aspect, in some implementations of the first aspect, the thickness of the second photosensitive layer is less than the thickness of the first photosensitive layer.

[0045] In conjunction with the first aspect, in some implementations of the first aspect, the charge generated by the second photosensitive layer and the first photosensitive layer is positive or negative.

[0046] In a second aspect, a camera module is provided, the camera module including a hybrid sensor as described in any of the first aspects above.

[0047] Thirdly, an electronic device is provided, the electronic device including a camera module as described in the second aspect above. Attached Figure Description

[0048] Figure 1 is a schematic diagram of a scene where an electronic device applicable to an embodiment of this application takes pictures;

[0049] Figure 2 is a schematic diagram of a pixel array included in a hybrid EVS provided by related technologies;

[0050] Figure 3A is a schematic diagram of the arrangement of a pixel array provided in an embodiment of this application;

[0051] Figure 3B is a schematic diagram of the stacking of two photosensitive layers included in the sensor provided in the embodiment of this application;

[0052] Figure 4 is a circuit diagram of one pixel in the hybrid sensor involved in Figures 3A and 3B;

[0053] Figure 5 shows another circuit diagram of a pixel in the hybrid sensor involved in Figures 3A and 3B.

[0054] Figure 6 is a cross-sectional schematic diagram of a front-illuminated RGB sensor provided by related technologies;

[0055] Figure 7 is a cross-sectional schematic diagram of a front-illuminated hybrid sensor provided in an embodiment of this application;

[0056] Figure 8 is a cross-sectional schematic diagram of a back-illuminated RGB sensor provided by related technologies;

[0057] Figure 9 is a cross-sectional schematic diagram of a back-illuminated hybrid sensor provided in an embodiment of this application;

[0058] Figure 10 is a schematic diagram of a circuit structure corresponding to Figure 5;

[0059] Figure 11 is the equivalent circuit diagram of the circuit corresponding to Figure 10 in the first working mode;

[0060] Figure 12 is the equivalent circuit diagram of the circuit corresponding to Figure 10 in the second operating mode;

[0061] Figure 13 is the equivalent circuit diagram of the circuit corresponding to Figure 10 in the third operating mode;

[0062] Figure 14 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application;

[0063] Figure 15 is a schematic diagram of a circuit structure corresponding to Figure 4;

[0064] Figure 16 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application;

[0065] Figure 17 is a schematic diagram of another circuit structure provided in an embodiment of this application;

[0066] Figure 18 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application;

[0067] Figure 19 is a schematic diagram of another circuit structure provided in an embodiment of this application;

[0068] Figure 20 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application;

[0069] Figure 21 is a schematic diagram of another circuit structure provided in an embodiment of this application;

[0070] Figure 22 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application;

[0071] Figure 23 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application;

[0072] Figure 24 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application;

[0073] Figure 25 is a schematic diagram of another circuit structure provided in an embodiment of this application;

[0074] Figure 26 is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.

[0075] Reference numerals: 11 - First photosensitive layer; 12 - Metal wiring layer; 13 - Color filter layer; 14 - First electrode; 15 - Second photosensitive layer; 16 - Second electrode; 161 - First sub-electrode; 162 - Second sub-electrode; 17 - Third electrode; 18 - Fourth electrode; 181 - Third sub-electrode; 182 - Second sub-electrode; 19 - Substrate; 21 - RGB readout circuit; 22 - Event readout circuit. Detailed Implementation

[0076] The technical solutions in the embodiments of this application will be clearly and thoroughly described below with reference to the accompanying drawings. In the description of the embodiments of this application, unless otherwise stated, "" indicates "or," for example, A / B can mean A or B; the word "and / or" in the text is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone.

[0077] The terms "first," "second," etc., are used for descriptive purposes only and should not be construed as implying or suggesting relative importance or implicitly indicating the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more.

[0078] Figure 1 is a schematic diagram of a scene captured by an electronic device applicable to an embodiment of this application.

[0079] Typically, the imaging process of an RGB sensor can be described as follows: during the exposure time, light is transmitted through the lens to the photosensitive element; the photosensitive element senses the light signal, generates an electrical signal with a fixed frame rate, and transmits the electrical signal to the image signal processor (ISP); the ISP converts the electrical signal into image data and outputs it.

[0080] In the aforementioned imaging process, the RGB sensor requires a sustained exposure period to allow the photosensitive element to accumulate a certain number of photons. If the subject moves at high speed during this exposure period, motion blur will occur. In other words, due to its imaging mechanism and other factors, RGB sensors typically suffer from motion blur, resulting in lower imaging capabilities and a poorer user experience for electronic devices that include RGB sensors.

[0081] For example, as shown in Figure 1, taking a mobile phone as an example, when using a mobile phone including an RGB sensor to photograph a fast-moving subject, such as a person running quickly, motion blur will occur in the captured image due to the subject's excessive speed. Furthermore, in low-light scenes, the RGB sensor acquires limited information, and to obtain more information, the exposure time needs to be extended, which may also lead to motion blur in the captured image.

[0082] It should be understood that the captured image, such as the preview image displayed in shooting mode, or the captured image obtained in response to the click operation of the shooting control, etc., refers to the blur or ghosting around the person in the captured image.

[0083] To improve the user's imaging experience, a novel visual sensor has been introduced to address the aforementioned issues. In addition to an RGB sensor for imaging, a separate EVS (Electronic Visual Sensor) is incorporated into the phone, and these two independent sensors work together during shooting. Since the EVS only records pixels with brightness changes, it significantly reduces data volume, increases processing speed, and reduces power consumption. These characteristics make the EVS ideal for applications requiring real-time visual feedback, such as high-speed motion detection. Therefore, using a phone with both an RGB sensor and an EVS, motion blur can be eliminated when shooting fast-moving subjects in the scene shown in Figure 1. However, because the RGB sensor and EVS are two independent sensors, issues such as viewing angle difference and time alignment arise.

[0084] In response, a hybrid EVS technology has been provided. Figure 2 shows a schematic diagram of the pixel array arrangement in a hybrid EVS provided by the related technology.

[0085] For example, as shown in Figure 2, this hybrid EVS technology refers to stitching together target pixels used for imaging and EVS pixels used for event signal monitoring. That is, in the sensor, the hybrid EVS includes a target pixel array and an event pixel array. One part of the pixels are target pixels, with corresponding readout circuits used for imaging; the other part are event pixels, with corresponding readout circuits used for event signal monitoring. In this way, the stitched hybrid EVS can simultaneously process images and event signals at the pixel level, resulting in more efficient and flexible information processing capabilities. It should be noted that the target pixels can be, but are not limited to, RGB pixels, infrared (IR) pixels, or near-infrared (NIR) pixels; the type of target pixel is not limited here.

[0086] However, each pixel in hybrid EVS technology can only perform one of the two functions mentioned above, and cannot perform both functions simultaneously. This affects the data processing speed and frame rate at the back end. Therefore, the sensitivity and resolution of imaging and event monitoring will still be affected to some extent.

[0087] In view of this, embodiments of this application provide a variety of new hybrid sensor structures. By employing a two-layer photosensitive layer stacking technique, one photosensitive layer is used to realize RGB imaging, and the other photosensitive layer is used to realize event signal monitoring. Thus, event signal monitoring and imaging functions can be realized simultaneously in the same pixel of the same sensor. Furthermore, there is no viewing angle difference, and it does not affect the sensitivity and resolution. In addition, it can also be applied to low-light scenes, and no motion blur will occur when shooting fast-moving subjects.

[0088] The functions of the hybrid sensor provided in the embodiments of this application will be briefly introduced below with reference to Figures 3A to 5.

[0089] Figure 3A is a schematic diagram of the arrangement of a pixel array provided in an embodiment of this application.

[0090] As shown in Figure 3A, the pixel arrangement includes R pixels, G pixels, G pixels, and B pixels, and each RGB pixel can also serve as an event pixel. For example, the R pixel in Figure 3A can function not only as an R pixel but also as an event pixel. Furthermore, each pixel integrates an event readout circuit and an RGB readout circuit, used to read out event data and RGB data, respectively.

[0091] It should be noted that the above is only an example of one pixel arrangement. Of course, it can also be arranged in a way such as QPD arrangement (four adjacent pixels share the same color filter). This application does not limit this.

[0092] Figure 3B is a schematic diagram of the stacking of the two photosensitive layers included in the sensor provided in the embodiment of this application.

[0093] For example, two stacked photosensitive layers are arranged along the direction of light incidence, assuming the light incidence direction is vertically downward, as shown in Figure 3B(a). The upper photosensitive layer can be used to realize RGB imaging, while the lower photosensitive layer can be used to realize event signal monitoring; or, as shown in Figure 3B(b), the upper photosensitive layer can be used to realize event signal monitoring, while the lower photosensitive layer can be used to realize RGB imaging. For ease of subsequent explanation, the upper photosensitive layer can also be referred to as the second photosensitive layer, and the lower photosensitive layer as the first photosensitive layer.

[0094] It should be understood that the functions of the first photosensitive layer and the second photosensitive layer can be set and switched as needed, and the embodiments of this application do not limit this.

[0095] Optionally, in the embodiments of this application, the conductive charge carriers in the first photosensitive layer and the second photosensitive layer can be electrons or holes.

[0096] Figure 4 is a circuit diagram of one pixel in the hybrid sensor involved in Figures 3A and 3B.

[0097] For example, as shown in Figure 4(a), assuming the upper photosensitive layer in this pixel is used to realize RGB imaging, the photosensitive element included in the upper photosensitive layer can be exemplarily D1. An RGB readout circuit 21 is also provided in this pixel, connected to D1, for reading RGB pixel values. Assuming the lower photosensitive layer in this pixel is used to realize event signal monitoring, the photosensitive element included in the lower photosensitive layer can be exemplarily D2. An event readout circuit 22 is also provided in this pixel, connected to D2, for reading high frame rate event pixel values ​​(i.e., positive and negative polarity values). In this case, it is equivalent to each pixel having two photosensitive layers and two sets of readout circuits. One photosensitive layer and one set of readout circuits are connected to realize RGB imaging or event signal monitoring. Since the two photosensitive layers are stacked, both functions can be realized simultaneously in the same pixel.

[0098] Figure 5 shows another circuit diagram of a pixel in the hybrid sensor involved in Figures 3A and 3B.

[0099] For example, as shown in Figure 5, based on the circuit shown in Figure 4, a connection point P and a first switching device can be added between D2 and the event readout circuit 22, and the RGB readout circuit 21 can be connected at point P through a second switching device. Both the first and second switching devices can switch between closed and open. In this way, by controlling the opening or closing of the added first and second switching devices, three working modes can be achieved. The first working mode is: the upper photosensitive layer is used to realize RGB imaging, and the lower photosensitive layer is used to realize event signal monitoring. The second working mode is: the upper photosensitive layer is used to realize RGB imaging, or both the upper and lower photosensitive layers are used to realize RGB imaging, and the RGB data streams generated by the upper and lower photosensitive layers are merged and can be read by the RGB readout circuit 21. The third working mode is: the lower photosensitive layer is used to realize event signal monitoring, or both the upper and lower photosensitive layers are used to realize event signal monitoring, and the event data streams generated by the upper and lower photosensitive layers are merged and can be read by the event readout circuit 22.

[0100] It should be understood that the above is only an example, and the functions of the upper photosensitive layer and the lower photosensitive layer can be interchanged. This application does not limit this aspect.

[0101] Next, the specific structure and working mode of the hybrid sensor provided in the embodiments of this application will be described in detail with reference to Figures 6 to 25.

[0102] Example 1

[0103] Figure 6 is a cross-sectional schematic diagram of a front-illuminated RGB sensor provided by related technologies.

[0104] As shown in Figure 6, in a front-side illumination (FSI) RGB sensor, if the incident light is in a vertically downward direction, then a color filter layer 13, a metal wiring layer 12, and a first photosensitive layer 11 can be stacked sequentially along the direction of the incident light.

[0105] The color filter layer 13, on the side away from the metal wiring layer 12, typically includes an on-chip micro lens to converge the incident light. The color filter layer 13 may include, for example, red, green, and blue filters, with each pixel area corresponding to a different color filter, thereby decomposing the incident light color in a red-green-blue pattern. The metal wiring layer 12 is the wiring layer for setting the RGB readout circuit 21, used to transmit the electrical signals generated by the first photosensitive layer 11. The photosensitive element included in the first photosensitive layer 11 is used to generate the photoelectric effect, that is, to convert the received light signal into an electrical signal.

[0106] In the RGB sensor structure shown in Figure 6 above, when light enters the pixel, it passes through the on-chip lens and the color filter layer 13 to generate light of different colors. Then, it passes through the metal wiring layer 12 and is finally received by the first photosensitive layer 11. The first photosensitive layer 11 converts the received light into an electrical signal and outputs it through the metal wiring layer 12.

[0107] It should be noted that the metal in the metal wiring layer 12 may include multiple layers; the photosensitive element included in the first photosensitive layer 11 may be a photodiode (PD) for example, or it may be other types of photosensitive elements, and this application embodiment does not limit this.

[0108] Based on Figure 6, the hybrid sensor provided in this application embodiment adds a second photosensitive layer in order to simultaneously realize the monitoring function of event signals in the same pixel.

[0109] Figure 7 is a cross-sectional schematic diagram of a front-illuminated hybrid sensor provided in an embodiment of this application.

[0110] As shown in Figure 7(a), in a front-illuminated hybrid sensor, if the incident light is in a vertically downward direction, then along the direction of the incident light, a color filter layer 13, a first electrode 14, a second photosensitive layer 15, a second electrode 16, a metal wiring layer 12, and a first photosensitive layer 11 can be stacked in sequence.

[0111] In this embodiment, an on-chip lens may also be included on the side of the color filter layer 13 away from the first electrode 14 to converge the incident light. The photosensitive element included in the second photosensitive layer 15 is used to sense the light signal, generate charge, and realize charge transfer using the second electrode 16, that is, to output photocurrent to the subsequent circuit through the second electrode 16.

[0112] The first electrode 14 can be laid out as a whole layer, while the second electrode 16 is laid out separately for each pixel. That is, the first electrode 14 for multiple pixels is a common electrode, and each pixel corresponds to an independent second electrode 16. In addition, a first isolation layer is provided between the first electrode 14 and the color filter layer 13, and a second isolation layer is provided between the second electrode 16 and the metal wiring layer 12. The first isolation layer is used to support the fabrication of the color filter, and the second isolation layer is used to isolate the influence of current.

[0113] Optionally, the photosensitive element included in the second photosensitive layer 15 may be a photodiode, but it may also be other types of photosensitive elements. This application embodiment does not limit this.

[0114] For a description of the first photosensitive layer 11, please refer to the description in Figure 6 above, which will not be repeated here. Additionally, it should be noted that in the example in Figure 7, the metal wiring layer 12 is the wiring layer for setting up the RGB readout circuit 21 and the event readout circuit 22.

[0115] In the hybrid sensor structure shown in Figure 7(a) above, when light enters the pixel, it passes through the on-chip lens and the color filter layer 13 to generate light of different colors; then, it passes through the second photosensitive layer 15, then through the metal wiring layer 12, and finally the light is received by the first photosensitive layer 11; when the second photosensitive layer 15 receives the light, it converts the light signal into an electrical charge through the second electrode 16 and outputs it; when the first photosensitive layer 11 receives the light, it converts the light signal into an electrical signal and outputs it through the metal wiring layer 12.

[0116] For example, Figure 7(b) shows a bottom cross-sectional view looking upwards from the second electrode 16; Figure 7(c) shows a top cross-sectional view looking downwards from the metal wiring layer 12. In Figure 7(c), the dark square on the left side of each pixel region can indicate the photosensitive element D1.

[0117] Optionally, in the embodiments of this application, the photosensitive material of the second photosensitive layer 15 can be an organic material, and the photosensitive material of the first photosensitive layer 11 can be silicon; or, the photosensitive material of the second photosensitive layer 15 can be silicon, and the photosensitive material of the first photosensitive layer 11 can be an organic material.

[0118] Optionally, in the embodiments of this application, the photosensitive layer, which is an organic photosensitive material, can be replaced with other photosensitive films, such as inorganic or organic quantum dot film materials or perovskite film materials. It should be understood that the replacement of the photosensitive material does not affect the working principle and operating mode of the hybrid sensor.

[0119] Optionally, in this embodiment, the thickness of the second photosensitive layer 15 is thinner than the thickness of the first photosensitive layer 11. This allows the second photosensitive layer 15 to transmit a portion of the incident light, enabling this transmitted light to be transmitted to the first photosensitive layer 11. It should be understood that the thickness direction refers to the direction of light incidence.

[0120] Optionally, in this embodiment, the second photosensitive layer 15 can be used to monitor event signals, and the first photosensitive layer 11 can be used to achieve RGB imaging; or, the second photosensitive layer 15 can be used to achieve RGB imaging, while the first photosensitive layer 11 can be used to monitor event signals.

[0121] In this embodiment, two photosensitive layers are stacked. One photosensitive layer is used to realize RGB imaging, and the other photosensitive layer is used to realize event signal monitoring. Thus, event signal monitoring and imaging functions can be realized simultaneously in the same pixel of the same sensor. Furthermore, there is no viewing angle difference, and the sensitivity and resolution are not affected. Since the event signal monitoring function is combined, no motion blur will occur when shooting fast-moving subjects in low-light scenes.

[0122] In addition, in Example 1, since the front-illuminated hybrid sensor structure does not involve through-silicon via (TSV) technology, the fabrication difficulty and cost are relatively low.

[0123] Example 2

[0124] Figure 8 is a cross-sectional schematic diagram of a back-illuminated RGB sensor provided by related technologies.

[0125] As shown in Figure 8, in a back-side illumination (BSI) RGB sensor, if the incident light is in a vertically downward direction, a color filter layer 13, a first photosensitive layer 11, and a metal wiring layer 12 can be stacked sequentially along the direction of the incident light.

[0126] In Figure 8, compared to the RGB sensor shown in Figure 6, the positions of the first photosensitive layer 11 and the metal wiring layer 12 are reversed. On the side of the color filter layer 13 away from the first photosensitive layer 11, there is usually also an on-chip lens to converge the incident light. The functions of the color filter layer 13, the first photosensitive layer 11, and the metal wiring layer 12 can be referred to the relevant description in Figure 6, and will not be repeated here.

[0127] In the RGB sensor structure shown in Figure 8, when light enters the pixel, it passes through the on-chip lens and color filter layer 13 to generate light of different colors. The light is received by the first photosensitive layer 11 and converted into an electrical signal, which is then output through the metal wiring layer 12. The descriptions of the metal wiring layer 12 and the first photosensitive layer 11 can be found in Figure 6 and will not be repeated here.

[0128] It should be noted that, compared to the front-illuminated structure shown in Figure 6, the back-illuminated structure shown in Figure 8, by swapping the positions of the first photosensitive layer 11 and the metal wiring layer 12, allows the first photosensitive layer 11 to receive more light, or in other words, to have a larger aperture ratio, thereby improving sensitivity and signal-to-noise ratio and signal quality.

[0129] Based on Figure 8, the hybrid sensor provided in this application embodiment adds a second photosensitive layer in order to simultaneously realize the monitoring function of event signals in the same pixel.

[0130] Figure 9 is a cross-sectional schematic diagram of a back-illuminated hybrid sensor provided in an embodiment of this application.

[0131] As shown in Figure 9(a), in a back-illuminated hybrid sensor, if the incident light is vertically downward, a color filter layer 13, a first electrode 14, a second photosensitive layer 15, a second electrode 16, a first photosensitive layer 11, and a metal wiring layer 12 can be stacked sequentially along the direction of the incident light. In Figure 9, compared to the hybrid sensor shown in Figure 7, the positions of the first photosensitive layer 11 and the metal wiring layer 12 are reversed.

[0132] In this embodiment, an on-chip lens may also be included on the side of the color filter layer 13 away from the first electrode 14 to converge the incident light. The descriptions of the second photosensitive layer 15, the first electrode 14, and the second electrode 16 can be found in Figure 7 and will not be repeated here.

[0133] It should be noted that in the example of Figure 9, the metal wiring layer 12 is the wiring layer for setting the RGB readout circuit 21 and the event readout circuit 22.

[0134] In the hybrid sensor structure shown in Figure 9(a) above, when light enters the pixel, it passes through the on-chip lens and the color filter layer 13 to generate light of different colors; after passing through the second photosensitive layer, it passes through the first photosensitive layer 11; when the second photosensitive layer receives light, it converts the light signal into an electrical charge through the second electrode 16 and outputs it; when the first photosensitive layer 11 receives light, it converts the light signal into an electrical signal and outputs it through the metal wiring layer 12.

[0135] For example, as shown in Figure 9(b), it is a bottom view cross section viewed from the second electrode 16.

[0136] Optionally, in the embodiments of this application, the photosensitive material of the second photosensitive layer can be an organic material, and the photosensitive material of the first photosensitive layer 11 can be silicon; or, the photosensitive material of the second photosensitive layer can be silicon, and the photosensitive material of the first photosensitive layer 11 can be an organic material.

[0137] Optionally, in the embodiments of this application, the photosensitive layer, which is an organic photosensitive material, can be replaced with other photosensitive films, such as inorganic or organic quantum dot film materials or perovskite film materials. It should be understood that the replacement of the photosensitive material does not affect the working principle and operating mode of the hybrid sensor.

[0138] Optionally, in this embodiment, the thickness of the second photosensitive layer is thinner than the thickness of the first photosensitive layer 11. This allows the second photosensitive layer to transmit a portion of the incident light, which can then be transmitted to the first photosensitive layer 11. It should be understood that the thickness direction refers to the direction of light incidence.

[0139] Optionally, in this embodiment, the second photosensitive layer can be used to monitor event signals, and the first photosensitive layer 11 can be used to achieve RGB imaging; or, the second photosensitive layer can be used to achieve RGB imaging, while the first photosensitive layer 11 can be used to monitor event signals.

[0140] In this embodiment, two photosensitive layers are stacked. One photosensitive layer is used to realize RGB imaging, and the other photosensitive layer is used to realize event signal monitoring. Thus, event signal monitoring and imaging functions can be realized simultaneously in the same pixel of the same sensor. Furthermore, there is no viewing angle difference, and the sensitivity and resolution are not affected. Since the event signal monitoring function is combined, no motion blur will occur when shooting fast-moving subjects in low-light scenes.

[0141] In addition, in Embodiment 2, since the aperture ratio of the first photosensitive layer 11 is relatively larger, the generated signal quality is better.

[0142] In the two embodiments described above, the circuit corresponding to the hybrid sensor can be the circuit structure shown in Figure 4, or it can be the circuit structure shown in Figure 5. In this case, a first switching device and a second switching device can be added to the metal wiring layer 12.

[0143] For example, taking Figure 5 as an example, Figure 10 is a schematic diagram of a specific circuit structure corresponding to Figure 5.

[0144] Optionally, the RGB readout circuit 21 may include a reset transistor (RST) 31 connected to the second switching device S2 at point Q, a source follower transistor (SF) 32 connected to point Q, a switching transistor 34 connected between point Q and the photosensitive layer, and a row select transistor (RS) 33 connected between the source follower transistor 32 and the digital-to-analog converter (ADC); wherein the reset transistor 31, the source follower transistor 32, the row select transistor 33 and the switching transistor 34 may each include one of an NMOS transistor, multiple NMOS transistors connected in parallel or in series, one PMOS transistor or multiple PMOS transistors connected in parallel or in series.

[0145] It should be understood that the switching transistor 34 is used to control the photosensitive layer to be turned on or off with other transistors. When the switching transistor 34 is turned on, the reset transistor is used to reset the photosensitive element in the photosensitive layer before exposure; the source follower transistor is used to read out the electrical signal generated by the photosensitive element after photoelectric conversion; the row select transistor is used to output the electrical signal output from the source of the source follower transistor to the ADC; the ADC is used to perform digital-to-analog conversion.

[0146] It should be understood that the RGB readout circuit 21 may also include other modules or devices, and this application embodiment does not limit this.

[0147] Optionally, the event readout circuit 22 may include an event detection block (ED block). The ED block can be used to output event data streams to realize the event signal monitoring function.

[0148] For example, an ED block may include a comparator, a timestamp generator, and an arbiter. The comparator is used to compare whether the pixel brightness change at each moment exceeds a set threshold; the timestamp generator is used to record the time of the event for subsequent processing and analysis; and the arbiter is used to manage the order of event processing and output to ensure effective data transmission.

[0149] It should be understood that the event readout circuit 22 may also include other modules or devices, and this application embodiment does not limit this.

[0150] It should be understood that, based on the circuit shown in Figure 10, the first switching device S1 and the second switching device S2 can switch states as needed, thereby enabling the first photosensitive layer 11 and the second photosensitive layer to achieve the following three working modes.

[0151] Figure 11 is the equivalent circuit diagram of the circuit corresponding to Figure 10 in the first operating mode.

[0152] As shown in Figure 11, when the first switch S1 is closed and the second switch S2 is open, the photosensitive element in the first photosensitive layer 11 is equivalent to D1 in the corresponding circuit. D1 is connected to the RGB readout circuit 21, which can output RGB data stream to realize RGB imaging. At the same time, the photosensitive element in the second photosensitive layer is equivalent to D2 in the corresponding circuit. D2 is connected to the event readout circuit 22, which includes the ED block to realize event signal monitoring and output event data stream.

[0153] Alternatively, the photosensitive element in the second photosensitive layer is equivalent to D1 in the corresponding circuit. RGB imaging can be achieved through the second photosensitive layer and the RGB readout circuit 21, and an RGB data stream can be output. At the same time, the photosensitive element in the first photosensitive layer 11 is equivalent to D2 in the corresponding circuit. The first photosensitive layer 11 and the event readout circuit 22 can monitor event signals and output an event data stream.

[0154] It should be understood that in the first operating mode, the first switching device S1 is closed, while the second switching device S2 is open, allowing the RGB imaging function and the event signal monitoring function to be realized simultaneously. The first operating mode can also be called the RGB+EVS mode.

[0155] Figure 12 is the equivalent circuit diagram of the circuit corresponding to Figure 10 in the second operating mode.

[0156] As shown in Figure 12, when the first switching device S1 is open and the second switching device S2 is closed, D2 is connected to point Q through the closed second switching device S2. The charges generated by D1 and D2 can be combined and output as an RGB data stream through the RGB readout circuit 21. Optionally, the photosensitive element in the first photosensitive layer 11 corresponds to D1 in the corresponding circuit, and the photosensitive element in the second photosensitive layer corresponds to D2 in the corresponding circuit; or, the photosensitive element in the first photosensitive layer 11 corresponds to D2 in the corresponding circuit, and the photosensitive element in the second photosensitive layer corresponds to D1 in the corresponding circuit.

[0157] It should be understood that in the second operating mode, the first switching device S1 is open, while the second switching device S2 is closed. The charges generated by the two photosensitive layers are combined and output, and this is used only to achieve the RGB imaging function. The second operating mode can also be called the RGB-only mode.

[0158] Figure 13 is the equivalent circuit diagram of the circuit corresponding to Figure 10 in the third operating mode.

[0159] As shown in Figure 13, when the first switch S1 is closed and the second switch S2 is also closed, and the RGB readout circuit 21 is not working, the charges generated by D1 and D2 can be combined and output through the EVS readout circuit. Optionally, the photosensitive element in the first photosensitive layer 11 is equivalent to D1 in the circuit, and the photosensitive element in the second photosensitive layer is equivalent to D2 in the circuit; or, the photosensitive element in the first photosensitive layer 11 is equivalent to D2 in the circuit, and the photosensitive element in the second photosensitive layer is equivalent to D1 in the circuit.

[0160] It should be understood that in the third operating mode, the first switch S1 is closed, the second switch S2 is also closed, and the RGB readout circuit 21 is not working. The charges generated by the two photosensitive layers are combined and output, and this is only used to realize the monitoring function of event signals. The third operating mode can also be called EVS only mode.

[0161] Furthermore, it should be understood that even when both the first switching device S1 and the second switching device S2 are off, D1 can still continue to operate, outputting an RGB data stream through the RGB readout circuit 21. In this case, it is equivalent to having only one photosensitive layer used to achieve the RGB imaging function.

[0162] Example 3

[0163] Figure 14 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application.

[0164] As shown in Figure 14(a), based on the structure shown in Figure 9(a), the second electrode 16 can also transfer the charge on the second electrode 16 to the subsequent circuit through the metal leads passing through the first photosensitive layer 11; while the photocurrent generated by the first photosensitive layer 11 can be transferred to the subsequent circuit through other metal leads in the metal wiring layer 12. That is, the photocurrents generated by the second photosensitive layer 15 and the first photosensitive layer 11 can be output separately.

[0165] It should be understood that for a description of the other layers in the hybrid sensor structure shown in Figure 14, please refer to the description in Figure 9, and will not be repeated here.

[0166] In this embodiment, two photosensitive layers are stacked. One photosensitive layer is used to realize RGB imaging, and the other photosensitive layer is used to realize event signal monitoring. Thus, event signal monitoring and imaging functions can be realized simultaneously in the same pixel of the same sensor. Furthermore, there is no viewing angle difference, and the sensitivity and resolution are not affected. Since the event signal monitoring function is combined, no motion blur will occur when shooting fast-moving subjects in low-light scenes.

[0167] For example, as shown in Figure 14(b), it is a bottom cross-sectional view looking upward from the second electrode 16; as shown in Figure 14(c), it is a bottom cross-sectional view looking upward from the metal wiring layer 12.

[0168] For example, taking Figure 4 as an example, Figure 15 is a schematic diagram of a specific circuit structure corresponding to Figure 4.

[0169] Optionally, as shown in Figure 15, the photosensitive element in the second photosensitive layer 15 corresponds to D2 in the corresponding circuit. D2 is connected to the event readout circuit 22. The event readout circuit 22 includes an ED block that can monitor event signals and output event data streams. The photosensitive element in the first photosensitive layer 11 corresponds to D1 in the corresponding circuit. D1 is connected to the RGB readout circuit 21. The RGB readout circuit 21 can output RGB data streams to achieve RGB imaging.

[0170] Alternatively, the photosensitive element in the second photosensitive layer is equivalent to D1 in the corresponding circuit, and the second photosensitive layer and the RGB readout circuit 21 can realize RGB imaging and output RGB data stream; the photosensitive element in the first photosensitive layer 11 is equivalent to D2 in the corresponding circuit, and the first photosensitive layer 11 and the event readout circuit 22 can realize event signal monitoring and output event data stream.

[0171] It should be noted that the circuits that implement the above two functions are separate, and there is no connection between the first switching device S1 and the second switching device S2.

[0172] It should be understood that, in conjunction with Figure 15 above, the hybrid sensor shown in Figure 14 can also operate in three operating modes. In the first operating mode, RGB imaging and event signal monitoring functions are implemented simultaneously; in the second operating mode, the event signal monitoring function is stopped, and only the RGB imaging function is implemented; in the third operating mode, the RGB imaging function is stopped, and only the event signal monitoring function is implemented.

[0173] In the embodiments of this application, compared to the working modes described in Figures 12 and 13, the second and third working modes cannot combine the charges of the two photosensitive layers for readout, and only one photosensitive layer is used to achieve the corresponding function. Therefore, in the second and third working modes of Embodiment 3, the photosensitivity will decrease slightly.

[0174] Example 4

[0175] Figure 16 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application.

[0176] As shown in Figure 16(a), based on the structure shown in Figure 9(a), the second electrode 16 can be divided into two parts, namely, a first sub-electrode 161 and a second sub-electrode 162. One sub-electrode can be used to store the charge generated by the second photosensitive layer, and the other sub-electrode can be used to transfer the charge to the subsequently connected circuit. The storage and transfer functions can be determined by the voltage applied to their respective electrodes. For a description of the other layers in the hybrid sensor shown in Figure 16, please refer to the description in Embodiment 2, which will not be repeated here.

[0177] For example, as shown in Figure 16(b), it is a bottom cross-sectional view looking upward from the second electrode 16. As shown in Figure 16(c), it is a bottom cross-sectional view looking upward from the metal wiring layer 12.

[0178] The size of the first sub-electrode 161 can be larger than the size of the second sub-electrode 162. Thus, the larger first sub-electrode 161 can be used to store the charge generated by the second photosensitive layer, and the smaller second sub-electrode 162 can be used to transfer the charge to the subsequent connected circuit.

[0179] In this embodiment, two photosensitive layers are stacked. One photosensitive layer is used to realize RGB imaging, and the other photosensitive layer is used to realize event signal monitoring. Event signal monitoring and imaging functions can be realized simultaneously in the same pixel of the same sensor. Furthermore, there is no viewing angle difference, and the sensitivity and resolution are not affected. Since the event signal monitoring function is combined, no motion blur will occur when shooting fast-moving subjects in low-light scenes.

[0180] Furthermore, in Embodiment 4, because the second electrode 16 can be divided into two sub-electrodes for storing and transmitting charge, the charge storage time can be precisely controlled by the voltage on the sub-electrodes. This precise voltage control of the charge storage time in the photosensitive layer allows subsequent RGB imaging circuits to use correlated double sampling (CDS) technology for noise reduction, improving image quality. In other embodiments where the second electrode 16 is not divided into two, CDS output technology cannot be used in RGB-only mode.

[0181] For example, Figure 17 is a schematic diagram of a circuit structure corresponding to Figure 16.

[0182] Based on the circuit shown in Figure 10, D2 corresponding to the photosensitive element in the second photosensitive layer can be replaced with D2'. Since the second electrode 16 is divided into two parts, the horizontal line connected to point P in the symbol indicated by D2' is also divided into two parts. One part is used to indicate the first sub-electrode 161, and the other part is used to indicate the second sub-electrode 162. The short line connected to point P is relatively short and indicates the second sub-electrode 162.

[0183] Optionally, in the RGB readout circuit 21, a CDS module can also be connected to the ADC output side to eliminate noise and improve the output image quality by sampling the signal of each pixel twice.

[0184] It should be understood that for the description of other circuit structures and operating modes in Figure 17, please refer to the relevant descriptions in Figures 10 to 13. The embodiments of this application will not repeat them here.

[0185] It should be understood that the above is only an example of the second sub-electrode 162 being divided into two parts. In other embodiments of this application, the second sub-electrode 162 may also be divided into two parts. For details, please refer to the above description and it will not be repeated here.

[0186] For example, in Embodiments 1 to 3, 5, 7 and 8, the second sub-electrode 162 can be divided into two parts, namely, the first sub-electrode 161 and the second sub-electrode 162. This application does not limit this.

[0187] Example 5

[0188] Figure 18 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application.

[0189] The structure shown in Figure 18(a) differs from that shown in Figure 9(a) in that the second photosensitive layer and the first photosensitive layer 11 no longer use the same pixel size. Taking the pixel area corresponding to the second photosensitive layer as being consistent with the pixel area corresponding to the color filter layer 13 as an example, in this embodiment, the pixel size corresponding to the first photosensitive layer 11 is smaller than the pixel size corresponding to the second photosensitive layer. For example, the pixel size corresponding to the first photosensitive layer 11 is smaller, and the number of pixels corresponding to it can be 4 times the number of pixels corresponding to the second photosensitive layer or other multiples. Furthermore, each pixel corresponding to the first photosensitive layer 11 corresponds to an RGB readout circuit 21.

[0190] It should be noted that the multiple relationship of the number of pixels indicates the multiple relationship of n2, where n is an integer greater than or equal to 2. In other words, the number of pixels corresponding to the first photosensitive layer 11 can be 4, 9, 16, etc., the number of pixels corresponding to the second photosensitive layer.

[0191] The other structures shown in Figure 18(a) are the same as those shown in Figure 9(a). For details, please refer to the description of Figure 9(a), which will not be repeated here.

[0192] For example, as shown in Figure 18(b), it is a bottom cross-sectional view looking upward from the second electrode 16. As shown in Figure 18(c), it is a bottom cross-sectional view looking upward from the metal wiring layer 12.

[0193] It should be noted that in Figure 18(c), in the area where the second photosensitive layer corresponds to 1 pixel, the first photosensitive layer corresponds to 4 pixels; taking the 1 pixel corresponding to the first photosensitive layer as an example, the photosensitive element in this pixel is connected to a set of circuit devices shown on the right (only one set of circuit devices is shown as an example in the figure); correspondingly, the photosensitive elements in the 4 pixels should be connected one-to-one to the 4 sets of circuit devices (not shown in the figure).

[0194] In this embodiment 5, without changing the pixel size of the second photosensitive layer, by modifying the pixel size of the first photosensitive layer 11, the number of pixels corresponding to the first photosensitive layer 11 is increased to a multiple of n² of the number of pixels corresponding to the second photosensitive layer, where n is an integer greater than or equal to 2. This allows the hybrid sensor to obtain a higher image resolution when implementing RGB imaging and a higher photosensitivity when implementing event signal monitoring.

[0195] For example, Figure 19 is a schematic diagram of a circuit structure corresponding to Figure 18.

[0196] Based on the circuit shown in Figure 10, at point Q, it is equivalent to connecting four RGB readout circuits 21 in parallel. If it is another multiple, a corresponding number of RGB readout circuits 21 can be connected in parallel.

[0197] It should be understood that for the description of other circuit structures and operating modes in Figure 19, please refer to the relevant descriptions in Figures 10 to 13. The embodiments of this application will not repeat them here.

[0198] It should be understood that the above is only an example in which the number of pixels corresponding to the first photosensitive layer 11 is 4 times the number of pixels corresponding to the second photosensitive layer. In other embodiments of this application, the first photosensitive layer 11 may also correspond to a greater number of pixels. For details, please refer to the above description and it will not be repeated here.

[0199] For example, in Embodiments 1 to 4 and Embodiments 7 to 9, the first photosensitive layer 11 may also correspond to multiple times the number of pixels, and this application does not limit this.

[0200] Example 6

[0201] Figure 20 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application.

[0202] The structure shown in Figure 20(a) differs from that shown in Figure 18(a) in that the size of the second electrode 16 is reduced so that the number of pixels corresponding to the second electrode 16 is consistent with that of the first photosensitive layer 11. For example, if the number of pixels corresponding to the first photosensitive layer 11 is 4 times or other multiples of the number of pixels corresponding to the second photosensitive layer, the second electrode 16 will have the same number of pixels as the first photosensitive layer 11, which is also 4 times or other multiples of the number of pixels corresponding to the second photosensitive layer.

[0203] It should be noted that the multiple relationship of the number of pixels indicates the multiple relationship of n2, where n is an integer greater than or equal to 2. In other words, the number of pixels corresponding to the first photosensitive layer 11 can be 4, 9, 16, etc., the number of pixels corresponding to the second photosensitive layer. The second electrode 16 will use the same number of pixels as the first photosensitive layer, that is, the number of pixels corresponding to the second electrode 16 can be 4, 9, 16, etc., the number of pixels corresponding to the second photosensitive layer.

[0204] In addition, each pixel corresponding to the second electrode 16 can correspond to an event readout circuit 22.

[0205] Optionally, the charges in each pixel corresponding to the first photosensitive layer 11 can be merged and share a single RGB readout circuit 21.

[0206] The other structures shown in Figure 20(a) are the same as those shown in Figure 18(a). For details, please refer to the description of Figure 18(a), which will not be repeated here.

[0207] For example, as shown in Figure 20(b), it is a bottom cross-sectional view taken from the second electrode 16. As shown in Figure 20(c), it is a bottom cross-sectional view taken from the metal wiring layer 12.

[0208] In this embodiment 6, by modifying the number of pixels corresponding to the second electrode 16 and the first photosensitive layer 11, the number of pixels corresponding to the second electrode 16 and the first photosensitive layer 11 is increased to a multiple of n² of the number of pixels corresponding to the second photosensitive layer, where n is an integer greater than or equal to 2. Each pixel corresponding to the second electrode 16 corresponds to an event readout circuit 22, and multiple pixels corresponding to the first photosensitive layer 11 share a single RGB imaging circuit. This improves the event readout speed and optimizes noise in RGB imaging.

[0209] For example, Figure 21 is a schematic diagram of a circuit structure corresponding to Figure 20.

[0210] Taking an example where the number of pixels corresponding to the second electrode 16 and the first photosensitive layer 11 is four times the number of pixels corresponding to the second photosensitive layer, based on the circuit shown in Figure 10, four D2 transistors and an event readout circuit 22 can be connected in parallel at point P. At point Q, three D1 transistors and three switching transistors 34 can be added to the RGB readout circuit 21. The four sets of D1 transistors and switching transistors 34 can combine the charges and output them. It should be understood that if the number of pixels is other than a certain multiple, a corresponding number of D2 transistors and event readout circuits 22 can be connected in parallel, and more D1 transistors and switching transistors 34 can be added to the RGB readout circuit 21.

[0211] It should be understood that for the description of other circuit structures and operating modes in Figure 21, please refer to the relevant descriptions in Figures 10 to 13. The embodiments of this application will not repeat them here.

[0212] It should be understood that the above is only an example of the second electrode 16 being divided into multiple parts, and the number of pixels corresponding to the second electrode 16 and the first photosensitive layer 11 being 4 times the number of pixels corresponding to the second photosensitive layer. In other embodiments of this application, the second electrode 16 may also be divided into multiple parts, and the second electrode 16 and the first photosensitive layer 11 may also correspond to a greater number of pixels. For details, please refer to the above description and it will not be repeated here.

[0213] For example, in Embodiments 1 to 4, 7 and 9, the second electrode 16 may be divided into multiple parts, and the second electrode 16 and the first photosensitive layer 11 may correspond to multiple times the number of pixels. This application does not limit this.

[0214] Example 7

[0215] Figure 22 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application.

[0216] As shown in Figure 22(a), in a back-illuminated hybrid sensor, if the incident light is in a vertically downward direction, the first electrode 14, the second photosensitive layer 15, the second electrode 16, the color filter layer 13, the first photosensitive layer 11, and the metal wiring layer 12 can be stacked sequentially along the direction of the incident light.

[0217] In this embodiment, an on-chip lens may also be included on the side of the first electrode 14 away from the second photosensitive layer to converge the incident light. Further details regarding the hybrid sensor can be found in the relevant description in Figure 9, and will not be repeated here.

[0218] It should be understood that, relative to the hybrid sensor shown in Figure 9, the position of the color filter layer 13 has changed from above the first electrode 14 to between the second electrode 16 and the first photosensitive layer 11. Thus, when light enters the pixel, the second photosensitive layer receives white light (also known as full-color light), rather than light processed by the color filter layer 13; while the first photosensitive layer 11 receives light processed by the color filter.

[0219] For example, as shown in Figure 22(b), it is a bottom cross-sectional view looking upward from the second electrode 16; as shown in Figure 22(c), it is a bottom cross-sectional view looking upward from the metal wiring layer 12.

[0220] In this embodiment 7, the second photosensitive layer is only used to realize the event signal monitoring function, and the first photosensitive layer 11 is only used to realize the RGB imaging function.

[0221] It should be understood that, in conjunction with Figure 22 above, the hybrid sensor shown in Figure 22 can also operate in three operating modes. In the first operating mode, RGB imaging and event signal monitoring functions are implemented simultaneously; in the second operating mode, the event signal monitoring function is stopped, and only the RGB imaging function is implemented; in the third operating mode, the RGB imaging function is stopped, and only the event signal monitoring function is implemented.

[0222] In the embodiments of this application, compared with the working modes introduced in Figures 12 and 13, the second and third working modes cannot read out the combined charge of the two photosensitive layers, and only one photosensitive layer is used to realize the corresponding function.

[0223] Example 8

[0224] Figure 23 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application.

[0225] The structure shown in Figure 23(a) differs from that shown in Figure 22(a) in that, based on the different colors of the filters corresponding to different pixels in the color filter layer 13, assuming that the light color absorbed by a certain filter is A, the second photosensitive layer at the corresponding pixel position can realize the function of absorbing the complementary color of A.

[0226] For example, when the light absorbed by the filter is red, the second photosensitive layer at the corresponding pixel location can absorb cyan light; when the light absorbed by the filter is green, the second photosensitive layer at the corresponding pixel location can absorb magenta light; and when the light absorbed by the filter is blue, the second photosensitive layer at the corresponding pixel location can absorb yellow light.

[0227] It should be noted that the function of absorbing complementary colors can be achieved by changing the material of the second photosensitive layer at different pixel positions.

[0228] In this embodiment, an on-chip lens may also be included on the side of the first electrode 14 away from the second photosensitive layer to converge the incident light. Further details regarding the hybrid sensor can be found in the relevant description in Figure 9, and will not be repeated here.

[0229] It should be understood that, relative to the hybrid sensor shown in Figure 9, the position of the color filter layer 13 has changed from above the first electrode 14 to between the second electrode 16 and the first photosensitive layer 11. Furthermore, the second photosensitive layer is configured to absorb the complementary color of the color absorbed by the filter. Thus, when light enters the pixel, the second photosensitive layer absorbs the complementary color of the color A absorbed by the lower photosensitive layer; while the first photosensitive layer 11 receives light that has passed through the filter and absorbed color A.

[0230] For example, as shown in Figure 23(b), it is a bottom cross-sectional view looking upward from the second electrode 16; and as shown in Figure 23(c), it is a top cross-sectional view looking downward from the color filter layer 13.

[0231] In this embodiment 8, the second photosensitive layer is used only for event signal monitoring, and the first photosensitive layer 11 is used only for RGB imaging. Alternatively, the second photosensitive layer is used only for RGB imaging, and the first photosensitive layer 11 is used only for event signal monitoring. Furthermore, the light absorbed by the second photosensitive layer does not reduce the intensity of the light absorbed by the first photosensitive layer 11.

[0232] It should be understood that, in conjunction with Figure 23 above, the hybrid sensor shown in Figure 23 can also operate in three operating modes. In the first operating mode, RGB imaging and event signal monitoring functions are implemented simultaneously; in the second operating mode, the event signal monitoring function is stopped, and only the RGB imaging function is implemented; in the third operating mode, the RGB imaging function is stopped, and only the event signal monitoring function is implemented.

[0233] In the embodiments of this application, compared with the working modes introduced in Figures 12 and 13, the second and third working modes cannot read out the combined charge of the two photosensitive layers, and only one photosensitive layer is used to realize the corresponding function.

[0234] Example 9

[0235] Figure 24 is a cross-sectional schematic diagram of another back-illuminated hybrid sensor provided in an embodiment of this application.

[0236] As shown in Figure 24(a), in the front-illuminated hybrid sensor shown in Figure 7(a), if the incident light is in a vertically downward direction, then along the direction of the incident light, a color filter layer 13, a first electrode 14, a second photosensitive layer 15, a second electrode 16, a third electrode 17, a first photosensitive layer 11 and a fourth electrode 18, a metal wiring layer 12 and a substrate 19 can be stacked in sequence.

[0237] In this embodiment, an on-chip lens may also be included on the side of the color filter layer 13 away from the first electrode 14 to converge the incident light. Additionally, the second electrode 16 may be divided into two parts: a first sub-electrode 161 and a second sub-electrode 162. One sub-electrode can be used to store the charge generated by the second photosensitive layer, and the other sub-electrode can be used to transfer the charge to subsequently connected circuitry. The storage and transfer functions can be determined by the voltage applied to their respective electrodes.

[0238] Similarly, the fourth electrode 18 can also be divided into two parts, namely, a third sub-electrode 181 and a fourth sub-electrode 182. One sub-electrode can be used to store the charge generated by the second photosensitive layer, and the other sub-electrode can be used to transfer the charge to the subsequently connected circuit. The storage and transfer functions can be determined by the voltage applied to the respective electrodes.

[0239] Assuming that both the second sub-electrode 162 and the fourth sub-electrode 182 are used to transmit charge, the second sub-electrode 162 and the fourth sub-electrode 182 can be connected to the metal wiring layer 12 through the metal wires filled in the TSV vias of the third electrode 17, the first photosensitive layer 11 and the fourth electrode 18, and output charge together.

[0240] Optionally, in this embodiment, the photosensitive materials of the second photosensitive layer and the first photosensitive layer 11 can both be organic materials, and the material of the substrate 19 can be silicon.

[0241] Optionally, in this embodiment, the photosensitive material of the second photosensitive layer can be replaced with other photosensitive films, such as inorganic or organic quantum dot film materials or perovskite film materials. It should be understood that replacing the photosensitive material of the second photosensitive layer does not affect the working principle and operating mode of the hybrid sensor.

[0242] Optionally, in this embodiment, the thickness of the second photosensitive layer and the thickness of the first photosensitive layer 11 can be the same, but the second photosensitive layer is thinner than the substrate 19. In this way, both the second photosensitive layer and the first photosensitive layer 11 can transmit a portion of the incident light. It should be understood that the thickness direction refers to the direction of light incidence.

[0243] Optionally, in this embodiment, the second photosensitive layer can be used to monitor event signals, and the first photosensitive layer 11 can be used to achieve RGB imaging; or, the second photosensitive layer can be used to achieve RGB imaging, while the first photosensitive layer 11 can be used to monitor event signals.

[0244] In the above embodiments, the circuit corresponding to the hybrid sensor can be the circuit structure shown in Figure 25. In this case, compared with the circuit structure shown in Figure 10, the first switching device S1 is retained, the second switching device S2 is cancelled, the second photosensitive layer can be replaced by D2′ in the circuit, the first photosensitive layer 11 can be replaced by D1′ in the circuit, and the switching transistor 34 is also cancelled.

[0245] For further details on the circuit, please refer to the relevant descriptions in Figure 10, which will not be repeated here.

[0246] It should be understood that, in conjunction with Figure 25 above, the hybrid sensor shown in Figure 25 can also operate in three operating modes. In the first operating mode, RGB imaging and event signal monitoring functions are implemented simultaneously; in the second operating mode, the event signal monitoring function is stopped, and only the RGB imaging function is implemented; in the third operating mode, the RGB imaging function is stopped, and only the event signal monitoring function is implemented.

[0247] In this embodiment, the second and third working modes are the same as those described in Figures 12 and 13, and can read out the combined charge of the two photosensitive layers.

[0248] For example, FIG26 shows a schematic diagram of the structure of an electronic device 30 provided in an embodiment of the present application. The electronic device 30 may include a processor 31, a memory 32, a camera 33 and a display screen 34.

[0249] It is understood that the structures illustrated in the embodiments of this application do not constitute a specific limitation on the electronic device 30. In other embodiments of this application, the electronic device 30 may include more or fewer components than illustrated, or combine some components, or split some components, or have different component arrangements. The illustrated components may be implemented in hardware, software, or a combination of software and hardware.

[0250] For example, when the electronic device 30 is a smart mobile terminal such as a mobile phone or tablet, the electronic device 30 may further include at least one of the following: a universal serial bus (USB) interface, a charging management module, a power management module, a battery, an antenna, a mobile communication module, a wireless communication module, an audio module, a speaker, a receiver, a microphone, a headphone jack, a sensor module, buttons, a motor, an indicator, and a subscriber identification module (SIM) card interface, etc. The sensor module may include pressure sensors, gyroscope sensors, barometric pressure sensors, magnetic sensors, accelerometers, distance sensors, proximity sensors, fingerprint sensors, temperature sensors, touch sensors, ambient light sensors, and bone conduction sensors, etc.

[0251] Processor 31 may include one or more processing units, such as an application processor (AP), a graphics processing unit (GPU), an ISP, a controller, a video codec, and a digital signal processor (DSP). These different processing units may be independent devices or integrated into one or more processors. The controller can generate operation control signals based on the instruction opcode and timing signals to control instruction fetching and execution.

[0252] In some embodiments, the processor 31 may include one or more interfaces. Interfaces may include inter-integrated circuit (I2C) interfaces, mobile industry processor interfaces (MIPI), and general-purpose input / output (GPIO) interfaces, etc.

[0253] The I2C interface is a bidirectional synchronous serial bus, including a serial data line (SDA) and a serial clock line (SCL). In some embodiments, the processor 31 may include multiple I2C buses. The processor 31 can couple a touch sensor through the I2C interface, enabling the processor 31 and the touch sensor to communicate via the I2C bus interface, thereby realizing the touch function of the electronic device 30.

[0254] The MIPI interface can be used to connect the processor 31 to peripheral devices such as the display screen 34 and the camera 33. The MIPI interface includes a camera serial interface (CSI) and a display serial interface (DSI). In some embodiments, the processor 31 and the camera 33 communicate via the CSI interface to enable the electronic device 30 to capture images. The processor 31 and the display screen 34 communicate via the DSI interface to enable the electronic device 30 to display images.

[0255] The GPIO interface can be configured via software. It can be configured as a control signal or a data signal. In some embodiments, the GPIO interface can be used to connect the processor 31 to the camera 33, display screen 34, etc. The GPIO interface can also be configured as an I2C interface, MIPI interface, etc.

[0256] It is understood that the interface connection relationships between the modules illustrated in the embodiments of this application are merely illustrative and do not constitute a structural limitation on the electronic device 30. In other embodiments of this application, the electronic device 30 may also employ different interface connection methods or combinations of multiple interface connection methods as described in the above embodiments.

[0257] Electronic device 30 implements display functions through a GPU, display screen 34, and application processor. The GPU is a microprocessor for image processing, connecting the display screen 34 and the application processor. The GPU is used to perform mathematical and geometric calculations and for graphics rendering. Processor 31 may include one or more GPUs, which execute program instructions to generate or modify display information.

[0258] The display screen 34 is used to display images and videos, etc. The display screen 34 includes a display panel. The display panel can be a liquid crystal display (LCD), an organic light-emitting diode (OLED), an active-matrix organic light-emitting diode (AMOLED), a flexible light-emitting diode (FLED), a Miniled LED, a MicroLED, a Micro-OLED, a quantum dot light-emitting diode (QLED), etc. In some embodiments, the electronic device 30 may include one or N display screens 34, where N is a positive integer greater than 1.

[0259] Electronic device 30 can perform shooting functions through ISP, camera 33, video codec, GPU, display screen 34 and application processor.

[0260] The ISP (Image Signal Processor) is used to process data fed back from the camera 33. For example, when taking a picture, the shutter is opened, and light is transmitted through the lens to the camera's photosensitive element. The light signal is converted into an electrical signal, and the camera's photosensitive element transmits the electrical signal to the ISP for processing, transforming it into an image visible to the naked eye. The ISP can also perform algorithmic optimization of image noise, brightness, and skin tone. The ISP can also optimize parameters such as exposure and color temperature of the shooting scene. In some embodiments, the ISP can be set in the camera 33.

[0261] Camera 33 is used to capture still images or videos. An object is projected onto a photosensitive element through the lens, generating an optical image. The photosensitive element can be a charge-coupled device (CCD) or a complementary metal-oxide-semiconductor (CMOS) phototransistor. The photosensitive element converts the light signal into an electrical signal, which is then passed to the ISP for conversion into a digital image signal. The ISP outputs the digital image signal to the DSP for processing. The DSP converts the digital image signal into image signals in standard RGB, YUV, or other formats.

[0262] For example, the camera 33 may include the structure of a hybrid sensor as shown in any one of embodiments 1 to 9 above. Details regarding the structure of the hybrid sensor can be found in the corresponding text above and will not be repeated here.

[0263] In this embodiment, the camera 33 can be any one of an ultra-wide-angle camera, a wide-angle camera, or a telephoto camera in an electronic device. Furthermore, the camera 33 can be a front-facing camera or a rear-facing camera.

[0264] Digital signal processors (DSPs) are used to process digital signals. Besides digital image signals, they can also process other digital signals. For example, when electronic device 30 selects a frequency, the DSP can perform Fourier transforms on the frequency energy.

[0265] Video codecs are used to compress or decompress digital video. Electronic device 30 may support one or more video codecs. Thus, electronic device 30 can play or record videos in various encoding formats, such as Moving Picture Experts Group (MPEG) 1, MPEG2, MPEG3, MPEG4, etc.

[0266] The memory 32 can be used to store computer executable program code, which includes instructions. The memory 32 may include a program storage area and a data storage area. The program storage area may store the operating system, at least one application program required for a function (such as sound playback, image playback, etc.), etc. The data storage area may store data created during the use of the electronic device 30 (such as audio data, phonebook, etc.). Furthermore, the memory 32 may include high-speed random access memory, and may also include non-volatile memory, such as at least one disk storage device, flash memory device, universal flash storage (UFS), etc. The processor 31 executes various functional applications and data processing of the electronic device 30 by running instructions stored in the internal memory 32 and / or instructions stored in memory located within the processor.

[0267] This application does not specifically limit the type of electronic device 30. In some embodiments, electronic device 30 may be a mobile phone, wearable device (e.g., smart bracelet, smartwatch, earphone, etc.), tablet computer, laptop computer, handheld computer, ultra-mobile personal computer (UMPC), cellular phone, personal digital assistant (PDA), augmented reality (AR) / virtual reality (VR) device, or other IoT (Internet of Things) devices, as well as a television, large screen, printer, projector, etc.

[0268] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0269] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0270] The beneficial effects that the electronic device provided in the above-described embodiments of this application can achieve can be referred to the beneficial effects corresponding to the modules provided above, and will not be repeated here.

[0271] It should be understood that the above description is only intended to help those skilled in the art better understand the embodiments of this application, and is not intended to limit the scope of the embodiments of this application. Based on the examples given above, those skilled in the art can obviously make various equivalent modifications or changes. For example, some steps in the various embodiments of the above detection method may be unnecessary, or new steps may be added. Alternatively, any combination of two or more of the above embodiments may be used. Such modifications, changes, or combinations also fall within the scope of the embodiments of this application. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection through some interfaces, devices, or units, and may be electrical, mechanical, or other forms.

[0272] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0273] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0274] It should also be understood that the above description of the embodiments of this application focuses on highlighting the differences between the various embodiments. Any similarities or differences not mentioned can be referred to each other. For the sake of brevity, they will not be repeated here.

[0275] It should also be understood that, in the various embodiments of this application, the sequence number of each process does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0276] It should also be understood that in the embodiments of this application, "pre-setting" or "pre-defining" can be achieved by pre-saving the corresponding code, table or other means that can be used to indicate relevant information in the device (e.g., including electronic devices), and this application does not limit the specific implementation method.

[0277] It should also be understood that the methods, situations, categories, and classifications of embodiments in this application are for the convenience of description only and should not constitute a special limitation. Various methods, categories, situations, and features in embodiments can be combined without contradiction.

[0278] It should also be understood that, in the various embodiments of this application, unless otherwise specified or in case of logical conflict, the terminology and / or descriptions between different embodiments are consistent and can be referenced by each other, and the technical features in different embodiments can be combined to form new embodiments according to their inherent logical relationships.

[0279] Finally, it should be noted that the above descriptions are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of protection of the claims. In conclusion, the above descriptions are merely preferred embodiments of the technical solutions of this application and are not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A hybrid sensor, characterized in that, include: In a pixel region corresponding to the second photosensitive layer, the second photosensitive layer and the first photosensitive layer are arranged sequentially along the thickness direction. Both the second photosensitive layer and the first photosensitive layer are used to receive light and generate charge. The charges generated by the first and second photosensitive layers are used to achieve RGB imaging and / or event signal monitoring.

2. The hybrid sensor according to claim 1, characterized in that, The hybrid sensor further includes: a first electrode located above the second photosensitive layer and a second electrode located below the second photosensitive layer; The first electrode is laid in a whole layer, while the second electrode is laid at intervals.

3. The hybrid sensor according to claim 2, characterized in that, The hybrid sensor further includes a metal wiring layer located above or below the first photosensitive layer; The metal wiring layer includes an RGB readout circuit and an event readout circuit. The RGB readout circuit is used to convert the charge generated by the first photosensitive layer into an RGB data stream and output it. The event readout circuit is used to convert the charge generated by the second photosensitive layer into an event data stream and output it.

4. The hybrid sensor according to claim 3, characterized in that, In a pixel region corresponding to the second photosensitive layer, the number of pixels corresponding to the first photosensitive layer is n² times the number of pixels corresponding to the second photosensitive layer, where n is an integer greater than or equal to 1.

5. The hybrid sensor according to claim 4, characterized in that, The metal wiring layer includes multiple RGB readout circuits, and each pixel corresponding to the first photosensitive layer is connected to one RGB readout circuit; the charge generated by each pixel corresponding to the first photosensitive layer is output separately through the connected RGB readout circuits, or the charge generated by each pixel corresponding to the first photosensitive layer is combined and output after being connected to multiple RGB readout circuits.

6. The hybrid sensor according to claim 3 or 5, characterized in that, The number of pixels corresponding to the second electrode is the same as the number of pixels corresponding to the first photosensitive layer. Each pixel corresponding to the second electrode is connected to one of the event readout circuits. The charge generated by each pixel corresponding to the second electrode is output separately through the connected event readout circuits.

7. The hybrid sensor according to claim 3, characterized in that, When the metal wiring layer is located below the first photosensitive layer, the metal wiring layer further includes: a first metal wire disposed in a through hole penetrating the first photosensitive layer, the first metal wire being used to connect the second electrode and the event readout circuit.

8. The hybrid sensor according to claim 3, characterized in that, The second electrode includes a first sub-electrode and a second sub-electrode located on the same layer. The first sub-electrode is used to store the charge generated by the second photosensitive layer, and the second sub-electrode is used to transfer the charge generated by the second photosensitive layer.

9. The hybrid sensor according to claim 8, characterized in that, The hybrid sensor further includes a third electrode located above the first photosensitive layer and a fourth electrode located below the first photosensitive layer; The fourth electrode includes a third sub-electrode and a fourth sub-electrode located on the same layer. The third sub-electrode is used to store the charge generated by the first photosensitive layer, and the fourth sub-electrode is used to transmit the charge generated by the first photosensitive layer. The metal wiring layer is located below the fourth electrode. The metal wiring layer further includes a second metal line disposed in a through hole penetrating the third electrode, the first photosensitive layer and the fourth sub-electrode. The second metal line is used to connect the second sub-electrode, the fourth sub-electrode and the event readout circuit.

10. The hybrid sensor according to any one of claims 2 to 9, characterized in that, The hybrid sensor further includes a color filter layer located above the first electrode, the color filter layer comprising multiple filters for absorbing different colors.

11. The hybrid sensor according to any one of claims 2 to 5, characterized in that, The hybrid sensor further includes a color filter layer located below the second electrode, the color filter layer comprising multiple filters for absorbing different colors.

12. The hybrid sensor according to claim 11, characterized in that, The charge generated by the second photosensitive layer is used to monitor event signals, while the charge generated by the first photosensitive layer is used to achieve RGB imaging.

13. The hybrid sensor according to claim 11, characterized in that, The second photosensitive layer, corresponding to different pixel areas, is used to receive light of different colors; in the same pixel area, the color of the light received by the second photosensitive layer is complementary to the color of the light absorbed by the filter. The charge generated by the second photosensitive layer is used to monitor event signals, and the charge generated by the first photosensitive layer is used to achieve RGB imaging; or, the charge generated by the second photosensitive layer is used to achieve RGB imaging, and the charge generated by the first photosensitive layer is used to monitor event signals.

14. The hybrid sensor according to any one of claims 1 to 13, characterized in that, The photosensitive material of the second photosensitive layer is an organic material, an inorganic or organic quantum dot thin film material, or a perovskite thin film material.

15. The hybrid sensor according to any one of claims 1 to 14, characterized in that, The material of the first photosensitive layer is silicon.

16. The hybrid sensor according to any one of claims 1 to 15, characterized in that, The thickness of the second photosensitive layer is less than the thickness of the first photosensitive layer.

17. The hybrid sensor according to any one of claims 1 to 16, characterized in that, The charge generated by the second photosensitive layer and the first photosensitive layer is either positive or negative.

18. A camera module, characterized in that, The camera module includes a hybrid sensor as described in any one of claims 1 to 17.

19. An electronic device, characterized in that, The electronic device includes the camera module as described in claim 18.

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