Method for producing polycrystalline semiconductor material

Abstract

The invention relates to a method for producing polycrystalline semiconductor material, comprising introducing a reaction gas, which contains at least one semiconductor component in addition to hydrogen, into a reaction chamber of a gas phase deposition reactor delimited by a reactor jacket and a base plate, wherein the reaction gas is introduced through at least one nozzle located in the base plate and wherein the reaction chamber contains at least two filament rods attached to the base plate, onto which rods the semiconductor material is deposited, wherein at least two filament rods are different lengths.

Description

[0001] Method for the production of polycrystalline semiconductor material

[0002] The invention relates to a method for producing polycrystalline semiconductor material, comprising introducing a reaction gas containing at least one semiconductor component in addition to hydrogen into a reaction chamber of a gas phase deposition reactor bounded by a reactor jacket and a base plate, wherein the reaction gas is introduced through at least one nozzle located in the base plate and wherein the reaction chamber contains at least two filament rods attached to the base plate on which the semiconductor material is deposited, wherein at least two filament rods differ in their length.

[0003] Polycrystalline silicon (polysilicon) is the starting material for the production of single-crystal silicon, e.g., by crucible pulling (Czochralski process) or by zone melting (float zone process). Single-crystal silicon is used in the semiconductor industry for the manufacture of electronic components (chips).

[0004] Furthermore, polysilicon is required for the production of multicrystalline silicon, for example using ingot casting. The multicrystalline silicon obtained in block form can be used to manufacture solar cells.

[0005] Silicon carbide (SiC) has recently been used as a semiconductor material for various electronic devices. SiC is characterized by high radiation hardness, a wide bandgap, a high saturated electron drift velocity, a high operating temperature, and excellent electronic properties, including the absorption and emission of high-energy protons in the blue, violet, and ultraviolet regions of the spectrum. SiC semiconductors can be used at temperatures up to 250°C and exhibit high oxidation resistance. This provides advantages over pure silicon semiconductors.

[0006] Polycrystalline SiC (Poly-SiC) serves as the starting material for the production of single-crystal SiC semiconductor elements, for example using the PVT process.

[0007] Polysilicon and Poly-SiC can be obtained through a chemical vapor deposition process, which in the case of polysilicon is called the Siemens process.

[0008] In this process, filament rods (support bodies) are heated by direct electric current in a bell-shaped gas-phase deposition reactor, and a reaction gas containing a silicon-containing component and H₂ is introduced. A carbon-containing component is also required for the production of poly-SiC. The silicon-containing component is usually monosilane (SiH₄) or a chlorosilane / chlorosilane mixture. A typical example is trichlorosilane (SiHCl, TCS). For polysilicon production, SiH₄ or TCS in a mixture with H₂ is predominantly used. For poly-SiC production, for example, a methylsilane or a TCS-methane mixture can be used together with H₂.

[0009] The design of a typical gas-phase deposition reactor for polysilicon production is described, for example, in US 2012 / 0100302 Al. The design of a typical gas-phase deposition reactor for poly-SiC production can be found in US 2023 / 0141427 Al. The bottom of such a reactor (base plate) is generally equipped with electrodes that hold the filament rods. The filament rods can be made of silicon, graphite, or SiC and are usually of the same length.

[0010] Typically, two filament rods are connected by a bridge to form a filament pair, which creates an electrical circuit via the electrodes. The surface temperature of the filament rods during deposition is usually above 1000°C. At these temperatures, the silicon-containing or silicon-containing and carbon-containing components of the reaction gas decompose, and elemental silicon (SiC) is deposited from the gas phase onto the filament rods. This increases their diameter. Once a predetermined diameter is reached, the deposition process is stopped, and the resulting rods of semiconductor material (polysilicon or poly-SiC) are removed. After removing the bridge, cylindrical rods can be obtained.

[0011] The distribution of the reaction gas flow in the vapor deposition reactor affects the growth of the semiconductor material. Generally, a homogeneous reaction gas distribution is desired. However, particularly as the deposition process progresses, the reaction gas flow can become less uniform because the semiconductor rods, which increase in diameter, occupy an ever-larger volume of the reaction chamber, thus reducing the distance between the rods. This can lead to uneven growth (deviation from cylindrical growth) of individual semiconductor rods, resulting in skewed semiconductor rods (the filament rods are usually arranged perpendicular to the base plate), semiconductor rods with inhomogeneous surface and volume morphology, or even cracking.Since modern vapor deposition reactors typically contain at least 12 filament rod pairs, the toppling of just one rod pair can trigger a domino effect. This can cause considerable economic damage, especially if the reactor walls are damaged. Furthermore, the toppled rod pairs are usually contaminated, and the batch must undergo an additional cleaning step after removal. Additionally, semiconductor rods with an inhomogeneous surface and bulk morphology usually have to be classified as lower quality.

[0012] To improve the reaction gas flow, US 2011 / 0151137 describes a sheath (or sleeve) arranged around each filament rod in conjunction with a tangential gas flow. However, the additional sheaths increase the complexity of reactor preparation, which is reflected in longer operating times. Furthermore, the space required for the growing semiconductor rods increases considerably, impacting economic efficiency, as fewer rods can be arranged within a reactor.

[0013] US 2013 / 0089488 describes a gas-phase deposition reactor for polysilicon with at least 20 filament rods, wherein, with the exception of the filament rods near the reactor wall, each filament rod has three further adjacent filament rods at intervals of 15 to 45 cm, as well as one to three adjacent gas inlet openings in the base plate. While this arrangement allowed for a homogeneous reaction gas flow at the beginning of the deposition process, the gas flow became unstable towards the end of the deposition process with large rod diameters. The aforementioned disadvantages led to the object of the invention, namely to provide a method for the deposition of polysilicon and SiC in which semiconductor rods of high homogeneity are obtained, regardless of their position in the gas-phase deposition reactor.

[0014] This problem is solved by a method for producing polycrystalline semiconductor material, comprising introducing a reaction gas containing at least one semiconductor component in addition to H2 into a reaction chamber of a gas phase deposition reactor bounded by a reactor jacket and a base plate, wherein the reaction gas is introduced through at least one nozzle located in the base plate and wherein the reaction chamber contains at least two filament rods attached to the base plate on which the semiconductor material is deposited, wherein at least two filament rods differ in their length.

[0015] The gas phase deposition reactor is preferably a Siemens reactor as described in the introduction.

[0016] The filament rods preferably consist of pairs connected by a bridge, roughly in the shape of an inverted "U". The free ends of the filament rod pair are connected to electrodes anchored in the base plate. The base plate typically has a circular surface, with the filament rods preferably arranged rotationally symmetrically around the center of the base plate. Typical examples of the number of filament rod pairs in a reactor are 12, 36, 48, 54, 72, 96, or 108. From each filament rod pair, two semiconductor rods, ideally cylindrical, can be obtained after deposition and removal of the bridge. The more homogeneous the deposition process is due to a homogeneous reaction gas flow, the more uniform the resulting semiconductor rods will be.The filament rods, regardless of whether they are U-shaped or individual, can also be cylindrical, but other geometries are also possible (e.g., triangular or quadrilateral cross-sectional area).

[0017] If the gas-phase deposition reactor has a nozzle, it is preferably arranged centrally in the base plate. If several nozzles are present, they are preferably arranged rotationally symmetrically around a center point of the base plate or rotationally symmetrically around a nozzle provided centrally in the base plate.

[0018] A gas-phase deposition reactor typically includes at least one gas outlet opening. This can be located centrally or off-center in the base plate. If multiple gas outlet openings are provided, they are preferably arranged rotationally symmetrically around a central point in the base plate. Gas outlet openings can also generally be provided in the reactor shell.

[0019] The length of a filament rod (filament rod length) is understood to mean, in particular, the distance from the upper end of the filament rod to the base plate. The filament rod length should therefore be independent of how far the filament rod is inserted into the electrode in the base plate. In the case of a U-shaped pair of filament rods, the filament rod length, according to the definition above, should correspond to the distance between the base plate and the upper end of the bridge.

[0020] Preferably, each filament rod is anchored to the same depth in its electrode, with the upper ends of the electrodes preferably having the same distance to the base plate.

[0021] Surprisingly, it has been found that the distribution of the reaction gas in the reaction chamber can be positively influenced, and in particular homogenized, by varying the lengths of the filament rods. This effect occurs even if only two of the filament rods (or two pairs of filament rods) arranged in the gas-phase deposition reactor have different lengths. For example, a centrally located filament rod can be shorter than surrounding filament rods.

[0022] The different lengths of the filament rods allow control of the pressure exerted by the introduced reaction gas on the semiconductor rods, which increase in diameter with increasing deposition time. Shorter filament rods (semiconductor rods) positioned closer to a nozzle offer a smaller surface area for the incoming reaction gas and are therefore less likely to tilt or even fall over (see Fig. 3).

[0023] Preferably, the length of the filament rods increases or decreases with increasing distance of the filament rods from the center of the base plate; more preferably, the filament rod length increases. In particular, this is the radial distance from the center of the base plate towards the reactor shell. In other words, the filament rods in the center of the reactor preferably have a shorter length than the filament rods adjacent to the reactor shell. Preferably, the filament rods are equidistant along a radial line from the center of the base plate towards the reactor shell.

[0024] In principle, a filament rod can also be located in the middle of the base plate, but preferably a nozzle and / or a gas outlet is located there.

[0025] Filament rods that are equidistant from the center of the base plate preferably have the same length.

[0026] Preferably, the filament rods are arranged on one or more concentric lines around a center point of the base plate. Particularly preferably, filament rods located on the same concentric line are equidistant from each other.

[0027] The concentric lines can be circles, triangles, quadrilaterals, pentagons, hexagons (or other polygons). Star-shaped or wave-shaped concentric lines are also possible.

[0028] Preferably, the gas phase deposition reactor comprises one to four, more preferably one to three, in particular two such concentric lines on which filament rods are arranged.

[0029] Filament rods arranged on the same concentric line preferably have the same length.

[0030] Preferably, at least two groups of filament rods are provided, each group containing filament rods of the same length, and the groups differing in the length of their filament rods. A group preferably contains two or more filament rods.

[0031] Preferably, the reaction chamber comprises at least two of the described groups (Group 1, Group 2, Group n+1 ), each containing filament rods of a different length L (Group 1 : Li, Group 2 : L2, Group n+1 : L). n +i) , with the condition Ll < L2 < L(n + 1) .

[0032] The preferred number of groups of filament rods is two to four, with each group typically containing 4 to 24 filament rods of the same length.

[0033] Preferably, the filament rods grouped together ( 1, 2, n+1 ) are arranged on a concentric line around a center point of the base plate .

[0034] Filament rods of different lengths (Li, L2, L( n +i> ) can also be arranged on the same concentric line. Preferably, the filament rods exhibit a periodic sequence related to their length.

[0035] Preferably the length difference ALL2-LI , ALL (n+i) -Ln between the filament rod lengths Li, L2, L( n +i> 1 to 25%, preferably 2 to 15%, particularly preferably 3 to 8%, of length Li .

[0036] The length difference ALL2-LI ALL (n+i> -Ln can also be expressed as a ratio to the diameter of the base plate. This is preferably 1 to 20%, more preferably 2 to 15%, and particularly preferably 3 to 10% of the diameter of the (round) base plate. Preferably, the length difference ALL2-LI , ALL (n+i ) -Ln between the lengths Li, L2, L( n +i) equal in size .

[0037] The semiconductor material to be deposited is preferably polysilicon. The semiconductor component contained in the reaction gas therefore preferably comprises at least one silane, particularly preferably a halosilane.

[0038] The halosilane is preferably selected from the group containing the chlorosilanes of the general formulas H n SiC14-n, H m C16-mSi2, (CH3) n SiC14-n with n = 1 to 3 and m = 0 to 4. Preferably, the halosilane is TCS or a mixture of dichlorosilane and TCS. Such a reaction gas composition is particularly suitable for the production of polysilicon according to the Siemens process.

[0039] The semiconductor material to be deposited can also be poly-SiC. In this case, the semiconductor component preferably comprises at least one silane and one carbon component. Alternatively or additionally, the semiconductor component can comprise at least one organosilane.

[0040] The semiconductor component can generally consist of an organosilane, since this molecule contains both a carbon and a silicon source. The organosilane is preferably selected from the group of organochlorosilanes with the general formulas (CH3)nH. m SiC14-nm with n = 0 to 3 and m = 0 or 1 and Me n Si2C16-n with n = 1-5. The carbon component can be, for example, methane, ethane, propane, butane and combinations thereof.

[0041] Another aspect of the invention relates to a gas phase deposition reactor for the production of rods made of semiconductor material, in particular for carrying out the described process.

[0042] The gas phase deposition reactor comprises a base plate and a reactor shell that define a reaction chamber, at least one nozzle for supplying a reaction gas containing at least one semiconductor component and hydrogen into the reaction chamber, and at least two heatable filament rods attached to the base plate that differ in length.

[0043] Preferably, the gas phase deposition reactor is a (Siemens) reactor for the production of polysilicon and / or for the production of poly-SiC.

[0044] Regarding the design of the filament rods and the other components of the gas phase deposition reactor, reference can be made to the above statements.

[0045] Fig. 1 schematically shows the longitudinal section of a gas phase deposition reactor according to the invention.

[0046] Fig. 2 schematically shows five (a to e) gas phase deposition reactors according to the invention in cross-section with different filament rod configurations.

[0047] Fig. 3 schematically shows the reaction gas flow in a gas phase deposition reactor according to the invention in comparison to the prior art.

[0048] Reference symbol list

[0049] 100, 200, 300,

[0050] 400, 500, 600,

[0051] 700, 800 Gas phase deposition reactor 10 Base plate

[0052] 11 center nozzle

[0053] 12 Reactor shell

[0054] 13 nozzle

[0055] 14 reaction chamber

[0056] 15 Gas outlet

[0057] 16 Filament rod (LI )

[0058] 17 Single bar (LI)

[0059] 18 Filament rod (L2)

[0060] 19 single bar (L2)

[0061] 20 Bridge

[0062] 22 electrode

[0063] 30 filament rod A, B, C or D

[0064] 31 Single rod (for filament rod A, B, C or D) 33 Inner circle

[0065] 35 Outer circle

[0066] 37 Center circle

[0067] Figure 1 shows a gas-phase deposition reactor 100, which has a reaction chamber 14 bounded by a base plate 10 and a reactor jacket 12. Four filament rods 16, 18, each in the shape of an inverted "U", are arranged in the reaction chamber 14. Each of these filament rods 16, 18 consists of two individual rods 17, 19 connected by a bridge 20. The individual rods 17, 19 are anchored in electrodes 22 in the base plate 10. Nozzles 11, 13 for the reaction gas inlet are arranged centrally in the base plate 10 and between each of the filament rods 16, 18. A gas outlet 15 is also provided coaxially around the nozzle 11. The gas flow directions are indicated by a vertical arrow. The filament rods 18 have a length L2 and are arranged in the immediate vicinity of the reactor shell 12. The filament rods 16 have a shorter length LI and are arranged more towards the center of the reaction chamber 14.The length difference ÄL (L2 - LI ) between the filament rods 16, 18 is approximately 10% of the length LI .

[0068] Figure 2 a) to e) shows five gas phase deposition reactors 200, 300, 400, 500, 600 according to the invention in cross-section, each having a different configuration of filament rods 30. The filament rods 30 are, as shown in Figure 1, pairs of filament rods, each consisting of two individual rods 31 connected via a bridge 20.

[0069] Filament rods 30, which are marked with the same capital letter (A, B, C, D), have identical lengths, where the lengths of the filament rods 30 are A < B < C < D. The nozzles 13 are arranged rotationally symmetrically around the central nozzle 11.

[0070] The gas-phase deposition reactor 200 (Fig. 2a) has four A-filament rods 30 arranged on a circular line (dashed line, inner circle 33) around the nozzle 11. The inner circle 33 passes through the center point of the bridges 20 of the four A-filament rods 30. Furthermore, eight B-filament rods are arranged on an outer circular line (dashed line, outer circle 35). Eight nozzles 13 are provided between the inner circle 33 and the outer circle 35. Thus, two filament rods 30 differ in their length (A- and B-filament rods), with the length of the B-filament rods being greater in the vicinity of the reactor shell 12. The gas-phase deposition reactor 300 (Fig. 2b) has two A-filament rods 30 and two B-filament rods arranged alternately (ABAB) on its inner circle 33. On the outer circle 35, eight filament rods 30 of three different lengths (A, B, C) are arranged in the sequence ABCBABCB.One advantage of this arrangement is that the gas flow is directed and structurally caused deviations (e.g. asymmetrical inflow through the nozzle 11) in the central flow direction towards the filament rods are reduced (see also Fig. 2 d).

[0071] The gas-phase deposition reactor 400 (Fig. 2c) has six radially arranged A-filament rods 30 on its inner circle 33. Twelve B-filament rods 30 are arranged on the outer circle 35. The gas-phase deposition reactor 400 has six nozzles 13 arranged between the inner circle 33 and the outer circle 35, and twelve nozzles 13 arranged between each of the B-filament rods of the outer circle 35. Further filament rod configurations can be used to optimize the specific energy consumption. With an increasing number of filament rods (with increasing reactor size) in a reactor, the specific energy requirement can be minimized and the yield of semiconductor material increased (see also Fig. 2e).

[0072] The gas-phase deposition reactor 500 (Fig. 2d) has a total of 24 filament rods 30 in four different lengths (A, B, C, D). Two A-filament rods 30 and two B-filament rods are arranged alternately on an inner circle 33. Twelve filament rods are arranged alternately (ABAB). On the outer circle 35, twelve filament rods 30 in three different lengths (B, C, D) are arranged in the sequence BCCDCCBCCDCC. In contrast to the previously described gas-phase deposition reactors 200, 300, and 400, the gas-phase deposition reactor 500 has an additional central circle 37 on which eight filament rods 30 in three different lengths (A, B, C) are arranged in the sequence ABCBABCB. Between the filament rods of the inner circle 33 there are four nozzles 13, between the center circle 37 and the outer circle 35 there are eight nozzles 13 provided.

[0073] The gas-phase deposition reactor 600 (Fig. 2e) has 18 filament rods 30 in four different lengths (A, B, C, D). Three A-filament rods 30 are arranged on the inner circle 33 around the central nozzle 11. Six filament rods of two different lengths (B, C) are arranged alternately on the central circle 37. Nine D-filament rods 30 are provided on the outer circle 35. Six nozzles 13 are located between the inner circle 33 and the central circle 37, and twelve nozzles 13 for the reaction gas inlet are located between the central circle 37 and the outer circle 35.

[0074] Figure 3a) shows a known gas-phase deposition reactor 700, which exemplarily comprises four filament rods 18 of equal length L2. As in Figure 1, the filament rods 18 have the shape of an inverted "U", with the individual rods 19 arranged one behind the other. The flow of the reaction gas entering through the central nozzle 11 is indicated by the dashed arrows 40. The two horizontal arrows FL2 are intended to indicate the torque generated by the gas flow 40 on the filament rods 18 arranged around the nozzle 11. This torque increases with increasing diameter of the filament rods 18.

[0075] Figure 3b) shows a gas-phase deposition reactor 800 according to the invention, corresponding to that shown in Figure 1, with the difference that the individual rods 17 of the short filament rods 16 (length LI) and the individual rods 19 of the long filament rods 18 (length L2) are arranged one behind the other. The flow of the reaction gas entering through the nozzle 11 is indicated by the dashed arrows 41 and 42. The two horizontal arrows ELI are intended to indicate the force generated by the gas flow 40, 42 on the shorter filament rods 18 of length LI arranged around the nozzle 11. The associated torque (L1 * FLI) is significantly smaller due to the shorter length LI compared to L2 * FL2 in the known gas-phase deposition reactor 700 (where L2 * F applies). L2 > L1 * F L I ) .

[0076] In general, the risk of the filament rods 16, 18 tilting or even falling over increases with increasing torque. Tilting or tilting can cause the filament rods 16, 18 to lean against each other or against the reactor shell. Furthermore, the bridge 20 or the electrodes 22 may break.

[0077] Example

[0078] In a gas-phase deposition reactor (Siemens reactor) with a configuration as shown in Fig. 2a, polysilicon was deposited according to the inventive process (Example 1). The A filament rods of the inner circle had a length of 3100 mm (LI) and the B filament rods of the outer circle had a length of 3200 mm (L2). The length difference (100 mm) was therefore approximately 3% relative to LI. In comparative Example 1, which was carried out in an identical reactor under the same conditions, all rods had the same length of 3200 mm. In Example 2, which was also carried out in a gas-phase deposition reactor (Siemens reactor) as shown in Fig. 2a, the length LI of the A-filament rods of the inner circle was 2900 mm and the length L2 of the B-filament rods of the outer circle was 3100 mm. The length difference (200 mm) was therefore approximately 7% with respect to LI.In comparison example 2 (performed under the same conditions), all filament rods had the same length of 3100 mm.

[0079] Number of batches, tipping and leaning rate

[0080] . fit 371%

[0081] Comparison 535 (Upper confidence limit: 17.0%, example 1)

[0082] (Lower confidence limit: 11.2% j.4.3%)

[0083] Example 1 254 Upper limit of confidence: 7.6%, ( Lower limit of confidence: 2.4% . I [ .2?!%

[0084] Comparison 746 (Upper confidence limit: 3.5%, example 2)

[0085] (Lower limit of confidence: 1.3% | 0.4%

[0086] Example 2 238 Upper limit of confidence: 2.4%, (Lower limit of confidence: 0.1%

[0087]

[0088] Table 1

[0089] Table 1 shows the tipping and leaning rates for the examples. This rate is calculated as the ratio of the number of batches with defects divided by the number of batches with and without defects. A batch is considered tipped if parts of a filament rod, or at least one complete filament rod, have fallen onto the base plate. A batch is considered leaning if at least one filament rod is in contact with the reactor jacket or with an adjacent filament rod. Each batch was assessed when the filament rods were removed (tipping and / or leaning = 1, no tipping and / or leaning = 0). The upper and lower confidence limits were calculated from the values ​​of the individual batches using a binomial distribution (according to Wilson).

[0090] Due to the shorter length of the filament rods in the center, the average batch weight in examples 1 and 2 decreased only slightly by 1%. The average batch weight corresponds to the mean weight of the batches. The weight of a batch of filaments is the sum of the weights of all the filament rods.

[0091] The gas flow in Example 1 according to the invention results in a more homogeneous flow around the bridges and between the rod circles than in the comparison example. This leads to a more uniform surface and volume morphology in Example 1. The lower torque acting on the inner circle due to the gas flow causes significantly fewer tipping and leaning events.

Claims

Patent claims 1. A process for producing polycrystalline semiconductor material, comprising introducing a reaction gas containing at least one semiconductor component in addition to hydrogen into a reaction chamber of a gas phase deposition reactor bounded by a reactor jacket and a base plate, wherein the reaction gas is introduced through at least one nozzle located in the base plate and wherein the reaction chamber contains at least two filament rods attached to the base plate on which the semiconductor material is deposited, wherein at least two filament rods differ in their length.

2. Method according to claim 1, characterized in that the length of the filament rods increases or decreases, preferably increases, with increasing distance of the filament rods from a center point of the base plate.

3. Method according to claim 1 or 2, characterized in that filament rods which have an equal distance to a center point of the base plate have the same length .

4. Method according to one of the preceding claims, characterized in that the filament rods are arranged on one or more concentric lines around a center point of the base plate.

5. Method according to claim 4, characterized in that filament rods arranged on the same concentric line have the same length.

6. Method according to one of the preceding claims, characterized in that the reaction chamber comprises at least two groups ( 1, 2, n+1 ) , each containing filament rods of a different length Li, L2, L n +i, includes, with the proviso Li < L2 < L( n +i) .

7. Method according to claim 6, characterized in that the filament rods grouped together ( 1, 2, n+1 ) are arranged on a concentric line around a center point of the base plate.

8. Method according to claim 6, characterized in that filament rods of different lengths Li, L2, L( n +i> are arranged on the same concentric line, preferably in a periodic sequence .

9. Method according to any one of claims 6 to 8, characterized in that the length differences ALLL-LI ALL (n+i) -Ln between the lengths Li, L2, L( n +i> in a range of 1 to 25%, preferably 2 to 15%, particularly preferably 3 to 8%, of the length Li.

10. Method according to any one of claims 6 to 8, characterized in that the length differences ALLL-LI ALL (n+i) -Ln between the lengths Li, L2, L( n+i> in a range of 1 to 20%, preferably 2 to 15%, particularly preferably 3 to 10%, of the diameter of the base plate .

11. Method according to any one of claims 6 to 10, characterized in that the length differences ALLL-LI ALL (n+i) -Ln between the lengths Li, L2, L( n +i) are equal.

12. Method according to one of the preceding claims, characterized in that the semiconductor component comprises at least one silane, preferably chlorosilane.

13. Method according to one of the preceding claims, characterized in that the semiconductor component comprises at least one silane and one carbon component and / or that the semiconductor component comprises at least one organosilane.

14. Gas phase deposition reactor for the production of a semiconductor material, in particular for carrying out a process according to at least one of claims 1 to 13, comprising a base plate and a reactor shell that define a reaction chamber, at least one nozzle for supplying a reaction gas containing at least one semiconductor component and hydrogen into the reaction chamber and at least two heatable filament rods attached to the base plate that differ in length.

Images