Semiconductor device

Abstract

Provided is a novel semiconductor device. The present invention has a first transistor, a second transistor, a third transistor, and a fourth transistor. A first terminal of the first transistor is connected to a first terminal of the second transistor, a second terminal of the first transistor is connected to first wiring, a second terminal of the second transistor is connected to second wiring, a gate of the first transistor is connected to a gate of the third transistor, a first terminal of the third transistor, and a first terminal of the fourth transistor, a second terminal of the third transistor is connected to the first wiring, third wiring, or a gate of the fourth transistor, and a clock signal is applied to the first wiring.

Description

Semiconductor equipment

[0001] One aspect of the present invention relates to a semiconductor device.

[0002] One aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, projection devices, illumination devices, optical devices, electro-optical devices, imaging devices, light-receiving devices, detection devices, power supply devices, energy storage devices, communication devices, computing devices, control devices, computing processing devices, memory devices, input devices, output devices, input / output devices, signal processing devices, information processing devices, computers, electronic devices, systems having the same, methods for driving them, or methods for manufacturing them.

[0003] Display devices are used in a variety of applications. Large-scale display devices are used in home television systems and PID (Public Information Display) for digital signage. Small-scale display devices are used in mobile information terminals such as smartphones and tablets, and wearable devices such as VR (Virtual Reality) devices and AR (Augmented Reality) devices. Furthermore, display devices are being enhanced and given higher value by adding functions other than display. For example, display devices with touch panel functionality and display devices with in-screen fingerprint authentication functionality have been developed.

[0004] Furthermore, circuits for driving display devices have been developed. Patent Document 1 discloses an example of a driving circuit that can be used in a display device.

[0005] Japanese Patent Publication No. 2008-122939

[0006] Takashi Koida, "High-Mobility Transparent Conductive Film," National Institute of Advanced Industrial Science and Technology (AIST), AIST Photovoltaic Power Generation Research Results Presentation 2019, Internet <URL: https: / / unit.aist.go.jp / rpd-envene / PV / ja / results / 2019 / oral / T13.pdf>

[0007] One aspect of the present invention aims to provide a highly reliable semiconductor device. Alternatively, one aspect of the present invention aims to provide a semiconductor device that can suppress the degradation of transistor characteristics. Alternatively, one aspect of the present invention aims to provide a semiconductor device that can narrow the bezel width of a display device. Alternatively, one aspect of the present invention aims to provide a semiconductor device that can increase the operating speed of a display device. Alternatively, one aspect of the present invention aims to provide a semiconductor device that can increase the luminescence brightness of a display device. Alternatively, one aspect of the present invention aims to provide a semiconductor device that can increase the resolution of a display device. Alternatively, one aspect of the present invention aims to provide a semiconductor device that can reduce the power consumption of a display device. Alternatively, one aspect of the present invention aims to provide a semiconductor device that can improve the display quality of a display device. Alternatively, one aspect of the present invention aims to provide a semiconductor device that can improve the performance of a display device. Alternatively, one aspect of the present invention aims to provide a drive circuit to which the above semiconductor device is applied. Alternatively, one aspect of the present invention aims to provide a display device to which the above semiconductor device is applied. Alternatively, one aspect of the present invention aims to provide a method for driving the above semiconductor device. Alternatively, one aspect of the present invention aims to provide a method for driving the above-mentioned drive circuit. Alternatively, one aspect of the present invention aims to provide a method for driving the above-mentioned display device. Alternatively, one aspect of the present invention aims to provide a novel semiconductor device. Alternatively, one aspect of the present invention aims to provide a novel drive circuit. Alternatively, one aspect of the present invention aims to provide a novel display device.

[0008] Furthermore, the above-mentioned problems do not preclude the existence of other problems. Those skilled in the art can naturally derive other problems from the description in this specification, drawings, claims, etc., and it is possible to extract other problems from the description in this specification, drawings, claims, etc. Furthermore, one aspect of the present invention does not need to solve all of these problems (the above-mentioned problems and other problems).

[0009] (1) One aspect of the present invention is a semiconductor device comprising a first transistor, a second transistor, a third transistor, and a fourth transistor, wherein the first terminal of the first transistor is electrically connected to the first terminal of the second transistor, the second terminal of the first transistor is electrically connected to a first wire, the second terminal of the second transistor is electrically connected to a second wire, the gate of the first transistor is electrically connected to the gate of the third transistor, the first terminal of the third transistor, and the first terminal of the fourth transistor, the second terminal of the third transistor is electrically connected to a third wire, and a clock signal is supplied to the first wire.

[0010] (2) In addition, in (1) above, the gate of the fourth transistor may be electrically connected to the third wiring.

[0011] (3) In addition, in (1) above, the second terminal of the fourth transistor may be electrically connected to the third wiring.

[0012] (4) In addition, in (3) above, a fifth transistor may be included, wherein the first terminal of the fifth transistor is electrically connected to the gate of the first transistor, and the gate of the fifth transistor is electrically connected to the gate of the second transistor.

[0013] (5) One aspect of the present invention is a semiconductor device comprising a first transistor, a second transistor, a third transistor, and a fourth transistor, wherein the first terminal of the first transistor is electrically connected to the first terminal of the second transistor, the second terminal of the first transistor is electrically connected to a first wire, the second terminal of the second transistor is electrically connected to a second wire, the gate of the first transistor is electrically connected to the gate of the third transistor, the first terminal of the third transistor, and the first terminal of the fourth transistor, the second terminal of the third transistor is electrically connected to a first wire, and a clock signal is supplied to the first wire.

[0014] (6) Also, in (5) above, having a fifth transistor, the first terminal of the fifth transistor may be electrically connected to the gate of the first transistor, and the gate of the fifth transistor may be electrically connected to the gate of the second transistor.

[0015] (7) One aspect of the present invention has a first transistor, a second transistor, a third transistor, and a fourth transistor. The first terminal of the first transistor is electrically connected to the first terminal of the second transistor. The second terminal of the first transistor is electrically connected to a first wiring. The second terminal of the second transistor is electrically connected to a second wiring. The gate of the first transistor is electrically connected to the gate of the third transistor, the first terminal of the third transistor, and the first terminal of the fourth transistor. The gate of the fourth transistor is electrically connected to the second terminal of the fourth transistor. The second terminal of the third transistor is electrically connected to the gate of the fourth transistor or the first wiring. A clock signal is applied to the first wiring. It is a semiconductor device.

[0016] (8) Also, in (7) above, having a fifth transistor, the first terminal of the fifth transistor may be electrically connected to the gate of the first transistor, and the gate of the fifth transistor may be electrically connected to the gate of the second transistor.

[0017] (9) Also, in any one of (1) to (8) above, the channel length of the third transistor may be larger than the channel length of the first transistor.

[0018] (10) Also, in any one of (1) to (9) above, each of the first transistor to the fourth transistor may include an oxide semiconductor in a channel formation region.

[0019] (11) Also, in (10) above, the oxide semiconductor may contain indium.

[0020] According to one aspect of the present invention, a highly reliable semiconductor device can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device that can suppress the degradation of transistor characteristics can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device that can narrow the bezel width of a display device can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device that can increase the operating speed of a display device can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device that can increase the luminous brightness of a display device can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device that can increase the resolution of a display device can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device that can reduce the power consumption of a display device can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device that can improve the display quality of a display device can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device that can improve the performance of a display device can be provided. Alternatively, according to one aspect of the present invention, a drive circuit to which the above semiconductor device is applied can be provided. Alternatively, according to one aspect of the present invention, a display device to which the above semiconductor device is applied can be provided. Alternatively, according to one aspect of the present invention, a method for driving the above semiconductor device can be provided. Alternatively, according to one aspect of the present invention, a method for driving the above drive circuit can be provided. Alternatively, according to one aspect of the present invention, a method for driving the above display device can be provided. Alternatively, according to one aspect of the present invention, a novel semiconductor device can be provided. Alternatively, according to one aspect of the present invention, a novel drive circuit can be provided. Alternatively, according to one aspect of the present invention, a novel display device can be provided.

[0021] Furthermore, the effects described above do not preclude the existence of other effects. Those skilled in the art can naturally derive other effects from the descriptions in this specification, drawings, and claims, and it is possible to extract other effects from the descriptions in this specification, drawings, and claims. Moreover, one aspect of the present invention does not need to have all of these effects (the effects described above and other effects).

[0022] Figures 1A and 1B are circuit diagrams illustrating an example configuration of a semiconductor device. Figures 2A and 2B are circuit diagrams illustrating an example configuration of a semiconductor device. Figures 3A and 3B are circuit diagrams illustrating an example configuration of a semiconductor device. Figures 4A and 4B are circuit diagrams illustrating an example configuration of a semiconductor device. Figure 5 is a timing chart illustrating an example operation of a semiconductor device. Figures 6A and 6B are circuit diagrams illustrating an example operation of a semiconductor device. Figures 7A and 7B are circuit diagrams illustrating an example operation of a semiconductor device. Figures 8A and 8B are circuit diagrams illustrating an example operation of a semiconductor device. Figures 9A and 9B are circuit diagrams illustrating an example operation of a semiconductor device. Figures 10A and 10B are circuit diagrams illustrating an example configuration of a semiconductor device. Figures 11A and 11B are circuit diagrams illustrating an example configuration of a semiconductor device. Figures 12A and 12B are circuit diagrams illustrating an example configuration of a semiconductor device. Figures 13A and 13B are circuit diagrams illustrating an example configuration of a semiconductor device. Figures 14A and 14B are circuit diagrams illustrating an example configuration of a drive circuit. Figures 15A and 15B are block diagrams illustrating an example configuration of a display device. Figures 16A and 16B are circuit diagrams illustrating an example configuration of a display device. Figure 17A is a top view illustrating an example configuration of a transistor. Figures 17B and 17C are cross-sectional views illustrating an example configuration of a transistor. Figure 18A is a top view illustrating an example configuration of a transistor. Figures 18B and 18C are cross-sectional views illustrating an example configuration of a transistor. Figures 19A and 19B are top views illustrating an example configuration of a semiconductor device. Figures 20A, 20B, and 20C are cross-sectional views illustrating an example configuration of a semiconductor device. Figures 21A and 21B are top views illustrating an example configuration of a semiconductor device. Figure 22A is a perspective view illustrating an example configuration of a display device. Figures 22B, 22C, 22D, 22E, and 22F are top views illustrating an example of a pixel arrangement. Figure 23 is a cross-sectional view illustrating an example configuration of a display device. Figures 24A and 24B are cross-sectional views illustrating an example configuration of a display device. Figures 25A and 25B are cross-sectional views illustrating an example of the configuration of a display device. Figures 26A and 26B illustrate the carrier concentration dependence of hole mobility. Figure 26C is a cross-sectional view illustrating an indium oxide film.Figures 27A, 27B, 27C, 27D, 27E, 27F, 27G, and 27H show examples of electronic devices. Figures 28A1, 28A2, 28A3, 28A4, 28A5, 28A6, 28A7, and 28B1, 28B2, 28B3, 28B4, 28B5, and 28B6 illustrate electrical connections.

[0023] Embodiments of the present invention will now be described. However, it will be readily apparent to those skilled in the art that the embodiments and their details can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention is not to be construed as being limited to the contents of the following embodiments.

[0024] Furthermore, the contents of the embodiments can be appropriately combined to form one aspect of the present invention.

[0025] In this specification, the components of the present invention may be classified by function and shown as independent elements. However, it may be difficult to separate the components by function, and a single element may be involved in multiple functions, or a single function may be involved across multiple elements. Therefore, the explanation is not limited to this and may be appropriately rephrased.

[0026] Furthermore, when using the same symbol for multiple elements and explaining them in a way that distinguishes them, identification symbols such as "A", "b", "_1", "[n]", and "[m,n]" may be added. Also, when explaining something common to multiple elements with identification symbols, or when explaining them without distinguishing them, identification symbols may be omitted.

[0027] Furthermore, in drawings, the same reference numeral may be used for identical elements, elements with similar functions, elements of the same material, or elements formed simultaneously, thereby omitting the explanation of repetition. Additionally, the same hatching pattern may omit the use of a reference numeral.

[0028] Furthermore, the drawings are schematic representations intended to aid in understanding the present invention. Therefore, they are not limited to their size, aspect ratio, shape, etc. Also, some elements may be omitted.

[0029] (Embodiment 1) A semiconductor device according to one aspect of the present invention will be described with reference to the drawings. At least a part of the semiconductor device according to one aspect of the present invention can be used, for example, in a display device. In particular, it can be used in a drive circuit of a display device.

[0030] <Example of Semiconductor Device Configuration> Figures 1A, 1B, 2A, 2B, 3A, 3B, 4A, and 4B are circuit diagrams illustrating a semiconductor device 100 (semiconductor device 100A, semiconductor device 100B, semiconductor device 100C, semiconductor device 100D, semiconductor device 100E, semiconductor device 100F, semiconductor device 100G, semiconductor device 100H) according to one aspect of the present invention.

[0031] The semiconductor device 100 includes at least transistor M11, transistor M12, transistor M13, and transistor M14. The semiconductor device 100 may also further include a capacitive element C11.

[0032] One source or drain of transistor M11 is connected to one source or drain of transistor M12 and to wiring OL. The other source or drain of transistor M11 is connected to wiring CKL. The other source or drain of transistor M12 is connected to wiring VLS. The gate of transistor M11 is connected to one source or drain of transistor M13 and to one source or drain of transistor M14. The gate of transistor M13 is connected to one source or drain of transistor M13.

[0033] One terminal of the capacitive element C11 may be connected to the gate of transistor M11. The other terminal of the capacitive element C11 may be connected to either the source or the drain of transistor M11. The capacitive element C11 may also be a parasitic capacitance between the gate and either the source or the drain of transistor M11.

[0034] The wiring connected to the source or drain of transistor M14 may be referred to as node ND11. The wiring connected to the gate of transistor M12 may be referred to as node ND12. The wiring connected to the gate of transistor M14 may be referred to as node ND13. The wiring connected to the gate of transistor M11 may be referred to as node ND14.

[0035] The semiconductor device 100 has the function of supplying a signal from wiring CKL to wiring OL via transistor M11.

[0036] Furthermore, the semiconductor device 100 can be used in the drive circuit of a display device. In particular, it can be used in the drive circuit of a gate driver. In this case, pixels (not shown) may be connected to the wiring OL. Therefore, it can be said that the semiconductor device 100 has the function of outputting a signal to select a pixel. A specific example of the configuration of a drive circuit using the semiconductor device 100 will be described later.

[0037] An n-channel transistor can be used as the transistor constituting the semiconductor device 100.

[0038] Furthermore, a p-channel transistor may be used as at least one of the transistors constituting the semiconductor device 100. In that case, the descriptions relating to the positive and negative relationship of voltage, the magnitude relationship of electric potential, and the positive and negative relationship of current (also known as the direction of current flow) in the explanation of the semiconductor device 100 may be appropriately reinterpreted. For example, "high electric potential" and "low electric potential" may be appropriately reinterpreted as mutual. Also, for example, "raise the electric potential" and "lower the electric potential" may be appropriately reinterpreted as mutual.

[0039] In the semiconductor device 100, the transistor M13 can also be said to be diode-connected. Therefore, the transistor M13 can also be said to have the function of a rectifier that allows current to flow only from one source or drain of the transistor M13 to the other source or drain of the transistor M13. Thus, the semiconductor device 100 can also be said to have a rectifier section 101, and the rectifier section 101 can be said to have a diode-connected transistor M13.

[0040] Furthermore, if a p-channel transistor is used for transistor M13, the gate of transistor M13 may be connected to the other side of either the source or drain of transistor M13.

[0041] In semiconductor device 100, when supplying a signal from wiring CKL to wiring OL via transistor M11, the potential of node ND14 may rise due to the bootstrap effect. When the potential of node ND14 rises excessively, the voltage applied between the gate and the other of the source or drain of transistor M11 increases, raising concerns about the destruction and degradation of transistor M11. In particular, when the transistors in semiconductor device 100 are manufactured using a fine process, the gate insulating film becomes thinner, making dielectric breakdown of the gate insulating film more likely, thus increasing concerns about the destruction and degradation of transistor M11.

[0042] Therefore, in the semiconductor device 100, when the potential of node ND14 rises excessively, the diode-connected transistor M13 is turned on, and drain current flows through transistor M13. This prevents an excessive voltage from being applied between the gate and the source or drain of transistor M11. Thus, damage and degradation of transistor M11 can be suppressed. Furthermore, the transistors in the semiconductor device 100 can be manufactured using a fine process, which can improve the resolution of the display device and reduce the bezel width, among other things.

[0043] In the semiconductor device 100, a potential is applied to the other side of the source or drain of transistor M13 such that transistor M13 turns on when the potential of node ND14 rises excessively.

[0044] The source or drain of transistor M13 is connected to wiring VLD, wiring CKL, or the gate of transistor M14.

[0045] For example, as shown in semiconductor device 100A in Figure 1A, semiconductor device 100C in Figure 2A, and semiconductor device 100E in Figure 3A, the source or drain of transistor M13 may be connected to the wiring VLD.

[0046] Alternatively, as in semiconductor device 100B shown in Figure 1B, semiconductor device 100D shown in Figure 2B, semiconductor device 100F shown in Figure 3B, and semiconductor device 100H shown in Figure 4B, the other end of the source or drain of transistor M13 may be connected to wiring CKL.

[0047] Alternatively, as in the semiconductor device 100G shown in Figure 4A, for example, the other end of the source or drain of transistor M13 may be connected to the gate of transistor M14.

[0048] The gate of transistor M14 may be connected to the VLD wiring. For example, semiconductor device 100C shown in Figure 2A and semiconductor device 100D shown in Figure 2B have a configuration in which the gate of transistor M14 is connected to the VLD wiring.

[0049] Alternatively, the other end of the source or drain of transistor M14 may be connected to the VLD wiring. For example, semiconductor device 100E shown in Figure 3A and semiconductor device 100F shown in Figure 3B are configured such that the other end of the source or drain of transistor M14 is connected to the VLD wiring.

[0050] Alternatively, the gate of transistor M14 may be connected to the other of the source or drain of transistor M14. For example, semiconductor device 100G shown in Figure 4A and semiconductor device 100H shown in Figure 4B are configured such that the gate of transistor M14 is connected to the other of the source or drain of transistor M14.

[0051] Furthermore, semiconductor devices 100E and 100F may also have a transistor M15. One of the sources or drains of transistor M15 is connected to the gate of transistor M11. The other of the sources or drains of transistor M15 is connected to the VLS wiring. The gate of transistor M15 is connected to the gate of transistor M12. The other of the sources or drains of transistor M15 may be connected to a wiring other than the VLS wiring.

[0052] Furthermore, semiconductor devices 100G and 100H may also have a transistor M15. One of the sources or drains of transistor M15 is connected to the gate of transistor M11. The other of the sources or drains of transistor M15 is connected to the VLS wiring. The gate of transistor M15 is connected to the gate of transistor M12. The other of the sources or drains of transistor M15 may be connected to a different wiring from the VLS wiring.

[0053] In the semiconductor device 100, the VLS and VLD wirings each function as power lines. These wirings have the function of transmitting a constant potential output from a circuit (e.g., a power supply circuit) located outside the semiconductor device 100 to the semiconductor device 100. Therefore, each of the VLS and VLD wirings is supplied with a constant potential, for example. At least one of the VLS and VLD wirings may also function as a signal line. The CKL wiring functions as a signal line. This wiring has the function of transmitting a signal output from a circuit (e.g., a signal generation circuit) located outside the semiconductor device 100 to the semiconductor device 100. Therefore, the CKL wiring is supplied with a clock signal, for example.

[0054] For example, the wiring VLS is supplied with a potential L (here defined as a potential that can turn off a transistor when supplied to its gate), and the wiring VLD is supplied with a potential H (here defined as a potential that can turn on a transistor when supplied to its gate). The wiring CKL is supplied with a signal that is either potential L or potential H. Nodes ND11, ND12, and ND13 are each supplied with a signal that is either potential L or potential H. Potential H is greater than potential L, and the difference between them is greater than the threshold voltage of the transistors constituting the semiconductor device 100.

[0055] In the operation of the semiconductor device 100, for example, when the potential of node ND14 is at potential H and transistor M11 is ON, and the potential of node ND12 is at potential L and transistor M12 is OFF, when the potential of wiring CKL is raised from potential L to potential H, the potential of wiring CKL is supplied to wiring OL via transistor M11. At this time, if transistor M14 is OFF, a bootstrap effect occurs due to the capacitive coupling of the capacitive element C11, and the potential of node ND14 rises. This suppresses the decrease in the potential supplied to wiring OL due to the threshold voltage of transistor M11, and also speeds up the rise time and fall time of the potential of wiring OL.

[0056] Subsequently, when the potential of wiring CKL is lowered from potential H to potential L, the potential of wiring CKL is supplied to wiring OL via transistor M11. At this time, the potential of node ND14 decreases due to the capacitive coupling of capacitive element C11, but because there is a delay between the change in the potential of wiring OL and the change in the potential of wiring CKL, the transient voltage applied between node ND14 and wiring CKL may become large. This increases the transient voltage applied between the gate and the other side of the source or drain of transistor M11, raising concerns about the destruction and degradation of transistor M11.

[0057] Therefore, by having a diode-connected transistor M13, it is possible to prevent the potential of node ND14 from rising excessively. For example, when the potential of node ND14 rises to a potential greater than "potential H + threshold voltage of transistor M13" due to the capacitive coupling of the capacitive element C11, the diode-connected transistor M13 turns on. Then, current flows from node ND14 through transistor M13 to wiring VLD, wiring CKL, or the gate of transistor M14. This prevents the potential of node ND14 from rising to a potential greater than "potential H + threshold voltage of transistor M13". Thus, the transient voltage applied between the gate of transistor M11 and the other source or drain can be reduced, which suppresses the destruction and degradation of transistor M11 and improves reliability.

[0058] Furthermore, since the transient voltage applied between the gate and the other source or drain of transistor M11 can be reduced, for example, even if the thickness of the gate insulating film of transistor M11 is reduced, the destruction and degradation of transistor M11 can be suppressed. By reducing the thickness of the gate insulating film of transistor M11, the on-current of transistor M11 can be increased. This makes it possible to improve the operating speed of the semiconductor device 100. Also, by reducing the thickness of the gate insulating film of transistor M11, a sufficient on-current can be obtained even if the channel width of transistor M11 is reduced. Therefore, the layout area of ​​the semiconductor device 100 can be reduced. Thus, when the semiconductor device 100 is used as a display device, the bezel width can be reduced.

[0059] [Operation Example] Next, an example of the operation of the semiconductor device 100 will be described. Here, as an example, an example of the operation of the semiconductor device 100A shown in Figure 1A will be described.

[0060] Figure 5 is a timing chart illustrating an example of the operation of semiconductor device 100A. Figures 6A to 9B are circuit diagrams illustrating an example of the operation of semiconductor device 100A.

[0061] In semiconductor device 100A, the wiring CKL is supplied with a signal that is either a potential L (sometimes simply written as "L") or a potential H (sometimes simply written as "H") that is greater than potential L. In this case, the difference between potential L and potential H is greater than the threshold voltage of the transistor. Potential L or potential H may be, for example, the ground potential.

[0062] Furthermore, a potential L is applied to the VLS wiring, and a potential H is applied to the VLD wiring. A signal may also be applied to at least one of the VLS and VLD wirings. Therefore, at least one of the VLS and VLD wirings can also function as a signal line.

[0063] In the description of operation, rise and fall times may occur when the potential changes, for example, due to loads such as wiring (parasitic capacitance and resistance). Also, even if two different operations are shown to occur at the same time, this does not necessarily mean that they are strictly at the same time. For example, even if there is a slight time difference due to signal delay in the wiring, they may still be considered to occur at the same time.

[0064] Furthermore, in timing charts, even if each period is depicted as having the same length on the diagram for the sake of clarity, the actual duration of each period may differ.

[0065] The timing chart shown in Figure 5 shows the potential applied to each wire during each period of operation. It also shows the change in potential at each node. The voltage between the gate of transistor M11 and one of its sources or drains (corresponding to wire OL) (here, one of the sources or drains is used as the reference) is shown as "Vgs11". The voltage between the gate of transistor M11 and the other of its sources or drains (corresponding to wire CKL) (here, the other of the sources or drains is used as the reference) is shown as "Vgd11".

[0066] Furthermore, Figures 6A to 9B each show the state of the circuit at each point in time of operation (potential of each wire and node, state of each transistor, current flowing through each wire and node, etc.). In these cases, a symbol indicating potential, such as "H" or "L" (also called a potential symbol), may be written adjacent to each wire and node with a surrounding line. In particular, when a change in potential occurs, the surrounding line may be made thicker, and when the circuit becomes floating, the surrounding line may be made dotted. In addition, an "×" symbol may be superimposed on an off-state transistor. Furthermore, the direction of current flow (which can also be said to be the direction of positive charge movement) or the way potential is supplied may be indicated along each wire and node with a dashed arrow.

[0067] In addition, the threshold voltage of transistor M11 may be denoted as Vt11, the threshold voltage of transistor M12 as Vt12, the threshold voltage of transistor M13 as Vt13, and the threshold voltage of transistor M14 as Vt14. Note that Vt11, Vt12, Vt13, and Vt14 are all assumed to be values ​​greater than 0V.

[0068] Furthermore, in order to make the explanation of operation easier to understand, the explanation of the potential change due to the capacitive coupling of the capacitive element C11 may sometimes be given without considering the effect of parasitic capacitance.

[0069] Furthermore, for the sake of clarity, the potential applied to each wire and each node is given as potential L or potential H, but different potentials may be applied to each wire and node. For example, at least one of nodes ND11, ND12, and ND13 may be given a potential smaller than potential H instead of potential H.

[0070] Immediately before period T11, a "L" state is applied to wiring CKL. Also, the potential of node ND11 is "L", the potential of node ND12 is "H", the potential of node ND13 is "H", and the potential of node ND14 is "L". Therefore, transistor M11 is in the off state, transistor M12 is in the on state, transistor M13 is in the off state, and transistor M14 is in the on state. As a result, the potential of wiring VLS is supplied to wiring OL via transistor M12, so the potential of wiring OL is "L". The circuit configuration at this time is shown in Figure 6A. In the following explanation, unless otherwise specified, the state immediately preceding the event is assumed to be maintained.

[0071] During period T11, the potential of node ND12 becomes "L". As a result, transistor M12 turns off. Also, the potential of node ND11 becomes "H". Then, the potential of node ND14 becomes "H-Vt14". Therefore, "H-Vt14-L" is applied as the gate voltage of transistor M11 (here, Vgs11), and transistor M11 turns on. As a result, the potential of wiring CKL is supplied to wiring OL via transistor M11, so the potential of wiring OL remains "L". The circuit configuration at this time is shown in Figure 6B.

[0072] During period T12, a "H" (high) is applied to wiring CKL. Then, current flows from wiring CKL to wiring OL via transistor M11. Figure 7A shows the circuit configuration at this time.

[0073] As a result, the potential of wiring CKL (which is "H" in this case) is supplied to wiring OL via transistor M11, causing the potential of wiring OL to rise from "L" to "H". Then, due to the capacitive coupling of capacitive element C11, the potential of node ND14 rises from "H-Vt14" to "H-Vt14+(H-L)". Therefore, the gate voltage of transistor M11 is maintained at "H-Vt14-L". The circuit configuration at this time is shown in Figure 7B.

[0074] Here, when the potential of node ND14 rises to a potential greater than "H + Vt13", transistor M13 turns on, as shown in Figure 7B, and current flows from node ND14 to wiring VLD through transistor M13.

[0075] Then, the potential of node ND14 gradually decreases from "H-Vt14+(H-L)". After that, when the potential of node ND14 reaches "H+Vt13", transistor M13 turns off. Figure 8A shows the circuit at this time.

[0076] During period T13, an "L" signal is applied to wiring CKL. As a result, current flows from wiring OL through transistor M11 to wiring CKL. Figure 8B shows the circuit configuration at this time.

[0077] As a result, the potential of wiring CKL (which is "L" in this case) is supplied to wiring OL via transistor M11, causing the potential of wiring OL to drop from "H" to "L". Then, due to the capacitive coupling of capacitive element C11, the potential of node ND14 drops from "H + Vt13" to "H + Vt13 - (H - L)". Subsequently, transistor M14 turns on, causing the potential of node ND14 to rise from "H + Vt13 - (H - L)" to "H - Vt14". The circuit configuration at this time is shown in Figure 9A.

[0078] During period T14, the potential of node ND11 becomes "L". Consequently, the potential of node ND14 also becomes "L". Therefore, transistor M11 turns off. Also, the potential of node ND12 becomes "H". Therefore, transistor M12 turns off. As a result, the potential of wiring VLS is supplied to wiring OL via transistor M12, and the potential of wiring OL remains "L". Figure 9B shows the circuit configuration at this time.

[0079] As described above, the semiconductor device 100A can be operated.

[0080] Furthermore, immediately before period T11, the potential of node ND13 may be "L". Also, during period T12, the potential of node ND13 may be "L". Also, during period T13, the potential of node ND13 may be "L". In addition, if the potential of node ND13 is "L", the potential of node ND11 may be "L" or "H".

[0081] Now, let's consider, for example, the case where semiconductor device 100A does not have transistor M13. In this case, during period T12, the potential of node ND14 remains elevated to "H - Vt14 + (H - L)". Therefore, during period T13, when "L" is applied to wiring CKL, the transient voltage applied between the gate of transistor M11 and the other of the source or drain becomes "H - Vt14 + (H - L) - L", that is, "2 × (H - L) - Vt14".

[0082] On the other hand, in semiconductor device 100A according to one aspect of the present invention, in period T12, when transistor M13 is turned on, current flows from node ND14 to wiring VLD via transistor M13, thus preventing the potential of node ND14 from rising to a potential greater than "H + Vt13". As a result, as shown in Figure 8B, in period T13, when "L" is applied to wiring CKL, the transient voltage applied between the gate and the other of the source or drain of transistor M11 becomes "H + Vt13 - L".

[0083] Therefore, by providing a diode-connected transistor M13, as in semiconductor device 100A, the transient voltage applied between the gate and the other source or drain of transistor M11 when "L" is applied to wiring CKL can be reduced from "2 × (H - L) - Vt14" to "H + Vt13 - L". This suppresses the destruction and degradation of transistor M11, thereby improving reliability.

[0084] During period T12, current flows from node ND14 to wiring VLD via transistor M13, causing the potential of node ND14 to gradually decrease. As a result, the gate voltage of transistor M11 gradually decreases, raising concerns that the rise time when the potential of wiring OL rises from "L" to "H" will be slowed. Therefore, for example, the rate at which the potential of node ND14 decreases can be slowed down by reducing the on-current of transistor M13. This slows down the rate at which the gate voltage of transistor M11 decreases, thereby speeding up the rise time when the potential of wiring OL rises from "L" to "H".

[0085] To reduce the on-current of transistor M13, for example, the channel length of transistor M13 may be made larger than the channel lengths of transistors M11, M12, and M14. Also, for example, the channel width of transistor M13 may be made smaller than the channel widths of transistors M11, M12, and M14. Also, for example, the "channel width / channel length" ratio of transistor M13 may be made smaller than the "channel width / channel length" ratio of transistors M11, M12, and M14. Also, for example, the gate capacitance of transistor M13 may be made smaller than the gate capacitances of transistors M11, M12, and M14. Also, for example, the thickness of the gate insulating film of transistor M13 may be made larger than the thickness of the gate insulating film of transistors M11, M12, and M14. Furthermore, for example, the relative permittivity of the gate insulating film of transistor M13 may be made smaller than the relative permittivity of the gate insulating films of transistors M11, M12, and M14. Also, for example, the field-effect mobility of transistor M13 may be made smaller than the field-effect mobility of transistors M11, M12, and M14.

[0086] Furthermore, in period T12, it is preferable that "Vt13 ≥ Vt11" in order to maintain the ON state of transistor M11 even after the potential of node ND14 drops to "H + Vt13". In this case, the larger Vt13, the larger the potential of node ND14 becomes, and the larger the gate voltage of transistor M11 becomes. Therefore, by increasing Vt13, the fall time when the potential of wiring OL drops from "H" to "L" in period T13 can be made faster.

[0087] However, in order for the potential of node ND14 to decrease from "H - Vt14 + (H - L)" to "H + Vt13", it is necessary to satisfy "Vt13 < H - L - Vt14". In this case, the smaller Vt13 is, the smaller the transient voltage applied between the gate and the other source or drain of transistor M11 during period T13 (here, "H + Vt13 - L"), thus increasing the effect of suppressing the destruction and degradation of transistor M11. Therefore, in order to speed up the fall time when the potential of wiring OL decreases from "H" to "L" during period T13, it is preferable to increase Vt13 within the range that satisfies "Vt11 ≤ Vt13 < H - L - Vt14" and within the range where the destruction and degradation of transistor M11 do not occur.

[0088] Furthermore, the above-described example of operation of semiconductor device 100A can be applied to semiconductor devices 100B, 100C, 100D, 100E, 100F, 100G, and 100H, respectively.

[0089] The main difference between the operation example of semiconductor device 100B and that of semiconductor device 100A is that during period T12, current flows from node ND14 to wiring CKL via transistor M13.

[0090] The operation of semiconductor device 100C is the same as that of semiconductor device 100A, since the gate of transistor M14 is connected to the wiring VLD.

[0091] The main difference between the operation example of semiconductor device 100D and the operation example of semiconductor device 100C is that during period T12, current flows from node ND14 to wiring CKL via transistor M13.

[0092] As an example of the operation of semiconductor device 100E, the operation example of semiconductor device 100A can be applied by setting the potential of node ND13 to "H" during periods T11 to T13 and to "L" during other periods. Furthermore, the main difference from the operation example of semiconductor device 100A is that during period T14, the potential of the wiring VLS is supplied to node ND14 via transistor M15.

[0093] The main difference between the operation example of semiconductor device 100F and that of semiconductor device 100E is that during period T12, current flows from node ND14 to wiring CKL via transistor M13.

[0094] The main differences between the operation example of semiconductor device 100G and that of semiconductor device 100A are that during period T12, current flows from node ND14 to node ND11 via transistor M13, and during period T14, the potential of the wiring VLS is supplied to node ND14 via transistor M15.

[0095] In the operation example of semiconductor device 100H, the main difference from the operation example of semiconductor device 100G is that during period T12, current flows from node ND14 to wiring CKL via transistor M13.

[0096] [Modification 1] One aspect of the present invention is not limited to the above-described configuration example.

[0097] Figure 10A is a circuit diagram illustrating a modified example of the semiconductor device 100A shown in Figure 1A. The semiconductor device 100A shown in Figure 10A has two diode-connected transistors (transistor M13_1, transistor M13_2) in the rectifier section 101, and these two transistors are connected in series. Note that in Figure 10A, transistor M12, wiring VLS, node ND12, etc., are omitted.

[0098] Specifically, one of the sources or drains of transistor M13_1 is connected to the gate of transistor M11. The gate of transistor M13_1 is connected to one of the sources or drains of transistor M13_1. The other of the sources or drains of transistor M13_1 is connected to one of the sources or drains of transistor M13_2. The gate of transistor M13_2 is connected to one of the sources or drains of transistor M13_2. The other of the sources or drains of transistor M13_2 is connected to wiring VLD.

[0099] Figure 10B is a circuit diagram illustrating a modified example of the semiconductor device 100A shown in Figure 1A. The semiconductor device 100A shown in Figure 10B has K transistors (transistors M13_1 to M13_K) (where K is an integer of 2 or more) connected by diodes in the rectifier section 101, and these K transistors are connected in series. Note that in Figure 10B, transistor M12, wiring VLS, node ND12, etc., are omitted.

[0100] Specifically, one of the sources or drains of transistor M13_1 is connected to the gate of transistor M11. The gate of transistor M13_1 is connected to one of the sources or drains of transistor M13_1. The other of the sources or drains of transistor M13_k (where k is an integer between 1 and K-1) is connected to one of the sources or drains of transistor M13_k+1. The gate of transistor M13_k+1 is connected to one of the sources or drains of transistor M13_k+1. The other of the sources or drains of transistor M13_k is connected to wiring VLD.

[0101] In this way, by configuring the rectifier section 101 to have multiple diode-connected transistors connected in series, the potential at node ND14 after the potential has gradually decreased during period T12 can be increased. For example, if the threshold voltage of each of the multiple diode-connected transistors is Vt13, then the potential at node ND14 after the potential has gradually decreased will be "H + 2 × Vt13" in the case of the semiconductor device 100A shown in Figure 10A, and "H + K × Vt13" in the case of the semiconductor device 100A shown in Figure 10B.

[0102] As a result, in period T12, the rate at which the gate voltage of transistor M11 decreases can be slowed down, thus speeding up the rise time when the potential of wiring OL rises from "L" to "H". Also, in period T13, the gate voltage of transistor M11 increases, thus speeding up the fall time when the potential of wiring OL drops from "H" to "L".

[0103] Figure 11A is a circuit diagram illustrating a modified example of the semiconductor device 100B shown in Figure 1B. The semiconductor device 100B shown in Figure 11A has two diode-connected transistors (transistor M13_1, transistor M13_2) in the rectifier section 101, and these two transistors are connected in series. Note that in Figure 11A, transistor M12, wiring VLS, node ND12, etc., are omitted. The semiconductor device 100B shown in Figure 11A differs from the semiconductor device 100A shown in Figure 10A in that the other of the source or drain of transistor M13_2 is connected to wiring CKL.

[0104] Figure 11B is a circuit diagram illustrating a modified example of the semiconductor device 100B shown in Figure 1B. The semiconductor device 100B shown in Figure 11B has K diode-connected transistors (transistors M13_1 to M13_K) in the rectifier section 101, and these K transistors are connected in series. Note that in Figure 11B, transistor M12, wiring VLS, node ND12, etc., are omitted. The semiconductor device 100B shown in Figure 11B differs from the semiconductor device 100A shown in Figure 10B in that the other of the source or drain of transistor M13_K is connected to wiring CKL.

[0105] For cases where the rectifier unit 101 has multiple diode-connected transistors, please refer to the descriptions of the semiconductor device 100A shown in Figures 10A and 10B, respectively, and therefore, the explanation will be omitted here.

[0106] [Modification 2] Figure 12A is a circuit diagram illustrating a modified version of the semiconductor device 100A shown in Figure 1A. In the semiconductor device 100A shown in Figure 12A, transistor M13 has a back gate. The back gate of transistor M13 is connected to wiring BGL.

[0107] Transistor M13 can change its threshold voltage depending on the potential applied to its back gate. For example, by reducing the potential applied to the back gate, the threshold voltage of transistor M13 can be increased. This allows for a faster rise time during period T12 when the potential of wiring OL rises from "L" to "H", similar to the semiconductor device 100A shown in Figures 10A and 10B. Additionally, during period T13, the fall time during period T13 when the potential of wiring OL falls from "H" to "L" can be accelerated.

[0108] Furthermore, a constant potential may be applied to the wiring BGL, or a signal that causes the potential to decrease at least during period T12 may be applied. Also, for example, the back gate of transistor M13 may be connected to the wiring VLS, or it may be connected to the gate of transistor M12.

[0109] Figure 12B is a circuit diagram illustrating a modified example of the semiconductor device 100B shown in Figure 1B. In the semiconductor device 100B shown in Figure 12B, transistor M13 has a back gate. The semiconductor device 100B shown in Figure 12B differs from the semiconductor device 100A shown in Figure 12A in that the other of the source or drain of transistor M13 is connected to wiring CKL.

[0110] Regarding the case where transistor M13 has a back gate, please refer to the explanation of semiconductor device 100A shown in Figure 12A, and therefore the explanation will be omitted here.

[0111] [Modification 3] Figure 13A is a circuit diagram illustrating a modification of the semiconductor device 100A shown in Figure 1A. The semiconductor device 100A shown in Figure 13A has a diode D13 in the rectifier section 101. The anode of diode D13 is connected to the gate of transistor M11. The cathode of diode D13 is connected to wiring VLD.

[0112] Figure 13B is a circuit diagram illustrating a modified example of the semiconductor device 100B shown in Figure 1B. The semiconductor device 100B shown in Figure 13B has a diode D13 in the rectifier section 101. The anode of diode D13 is connected to the gate of transistor M11. The cathode of diode D13 is connected to wiring CKL.

[0113] Since the explanation of semiconductor device 100A shown in Figure 1A can be found by setting the threshold voltage of diode D13 to Vt13, the explanation is omitted here.

[0114] Furthermore, one aspect of the present invention includes a configuration in which at least one of the gate, source, and drain of one or more transistors is either not connected to anything or connected to any wiring. Also, one aspect of the present invention includes a configuration in which one or more wirings are either not input to anything or are input to any signal or potential.

[0115] Furthermore, the modified examples described above, whether illustrated or not illustrated, can be applied to semiconductor devices 100C to 100H shown in Figures 2A to 4B. Also, two or more of the modified examples described above, whether illustrated or not illustrated, can be applied to semiconductor devices 100A to 100H shown in Figures 1A to 4B. Moreover, the semiconductor device 100 described above, whether illustrated or not illustrated, can solve the problem of providing at least a novel semiconductor device simply by its circuit configuration.

[0116] Furthermore, one aspect of the present invention is all or part of the circuit configuration described herein. Therefore, one aspect of the present invention does not have to include all or part of the operations described herein. Moreover, one aspect of the present invention is not limited to the operations described herein, and it is possible to appropriately change the potential applied to each wire, the timing of the change in that potential, etc.

[0117] <Example of Drive Circuit Configuration> Next, a drive circuit according to one aspect of the present invention will be described with reference to the drawings. At least a part of the semiconductor device according to one aspect of the present invention can be used in this drive circuit. Furthermore, this drive circuit can be used in a display device. In particular, it can be used in a gate driver of a display device.

[0118] Figure 14A is a circuit diagram illustrating an example configuration of a drive circuit having the semiconductor device described above.

[0119] As shown in Figure 14A, the drive circuit 110A includes transistors M11, M12, M13, M21, M22, M23, and M24. The drive circuit 110A may also include a capacitive element C11.

[0120] One source or drain of transistor M11 is connected to one source or drain of transistor M12 and to wiring OL. The other source or drain of transistor M11 is connected to wiring CKL. The other source or drain of transistor M12 is connected to wiring VLS1. One terminal of capacitive element C11 is connected to the gate of transistor M11. The other terminal of capacitive element C11 is connected to the other source or drain of transistor M11. The gate of transistor M11 is connected to one source or drain of transistor M13, one source or drain of transistor M21, and one source or drain of transistor M23. The gate of transistor M13 is connected to one source or drain of transistor M13. The other source or drain of transistor M13 is connected to wiring VLD1. The gate of transistor M12 is connected to one source or drain of transistor M22, the gate of transistor M23, and one source or drain of transistor M24. The gates of transistor M21 and M24 are each connected to wiring IL1. The gate of transistor M22 is connected to wiring IL2. The other source or drain of transistor M21 and M22 are each connected to wiring VLD2. The other source or drain of transistor M23 and M24 are each connected to wiring VLS2.

[0121] Here, in the drive circuit 110A, the configuration consisting of transistors M11, M12, M13, M21, M23, and capacitive element C11 corresponds to the semiconductor device 100E described above. In this case, transistor M21 corresponds to transistor M14, and transistor M23 corresponds to transistor M15. Also, wiring VLS1 corresponds to wiring VLS, and wiring VLD1 corresponds to wiring VLD.

[0122] Multiple drive circuits 110A can be applied, for example, to a shift register in a gate driver. In this case, one drive circuit 110A is provided for each stage of the shift register. At this time, the wiring IL1 of a drive circuit 110A provided in a certain stage is connected to the wiring OL of a drive circuit 110A provided in, for example, the stage immediately preceding it, or two or more stages before it. The wiring IL1 of a drive circuit 110A provided in the first stage is connected to, for example, the wiring to which a trigger signal (also called a start pulse signal) that starts the operation of the shift register is supplied. Furthermore, the wiring IL2 of a drive circuit 110A provided in a certain stage is connected to the wiring OL of a drive circuit 110A provided in, for example, the stage immediately following it, or two or more stages after it.

[0123] Furthermore, the wiring CKL of a drive circuit 110A provided in one stage is supplied with a clock signal that has a different phase from the clock signal supplied to the wiring CKL of a drive circuit 110A provided in the preceding or succeeding stage.

[0124] Furthermore, a constant potential is provided to each of the wirings VLS1, VLD1, VLS2, and VLD2, for example. Note that the same potential as wiring VLS1 may be provided to wiring VLS2, or a different potential (for example, a potential smaller than wiring VLS1). Also, wiring VLS2 may be connected to wiring VLS1. The same potential as wiring VLD1 may be provided to wiring VLD2, or a different potential (for example, a potential smaller than wiring VLD1). Also, wiring VLD2 may be connected to wiring VLD1.

[0125] With this configuration, the shift register having multiple drive circuits 110A can sequentially output signals to each of the wiring OLs of the multiple drive circuits 110A based on the clock signal.

[0126] Figure 14B is a circuit diagram illustrating a modified example of the drive circuit 110A shown in Figure 14A.

[0127] The drive circuit 110B shown in Figure 14B includes a transistor M25 in addition to the drive circuit 110A.

[0128] The gate of transistor M11 is connected to either the source or drain of transistor M13 and to either the source or drain of transistor M25. The gate of transistor M13 is connected to either the source or drain of transistor M13. The other source or drain of transistor M13 and the gate of transistor M25 are each connected to wiring VLD1. The other source or drain of transistor M25 is connected to either the source or drain of transistor M21 and to either the source or drain of transistor M23.

[0129] Here, in the drive circuit 110B, the configuration consisting of transistors M11, M12, M13, M25, and capacitive element C11 corresponds to the semiconductor device 100C described above. In this case, transistor M25 corresponds to transistor M14.

[0130] In the drive circuit 110B, when the potential of node ND14 rises due to the capacitive coupling of the capacitive element C11, the transistor M25 turns off, thereby preventing the potential of node ND11 from rising. As a result, the rise in the drain voltage of transistor M23 can be suppressed. Therefore, the destruction and degradation of transistor M23 can be suppressed, and reliability can be improved.

[0131] Furthermore, as a drive circuit according to one aspect of the present invention, it is possible to apply various configurations using the semiconductor device 100, not limited to the drive circuits 110A and 110B described above.

[0132] <Example of Display Device Configuration> Next, a display device according to one aspect of the present invention will be described with reference to the drawings. At least a part of the semiconductor device according to one aspect of the present invention can be used in the display device. Furthermore, at least a part of the drive circuit according to one aspect of the present invention can be used in the display device.

[0133] Figure 15A is a block diagram illustrating an example configuration of a display device 160 according to one embodiment of the present invention.

[0134] As shown in Figure 15A, the display device 160 includes a pixel unit 162, a gate driver unit 163, a source driver unit 164, and a control unit 167. The pixel unit 162 has, for example, a plurality of pixels 161 arranged in a matrix of m rows and n columns (where m is an integer of 2 or more, and n is an integer of 2 or more).

[0135] Each pixel 161 has a display element such as a liquid crystal element or a light-emitting element. In this case, the display device 160 can also be said to have the function of an output device. Furthermore, each pixel 161 may have a light-receiving element. In this case, the display device 160 can also be said to have the function of an imaging device (sometimes called an input device). Also, each pixel 161 may have both a display element and a light-receiving element. In this case, the display device 160 can also be said to have the function of both a display device and an imaging device (sometimes called an input / output device).

[0136] In Figure 15A, the pixel 161 located in the first row and first column is shown as pixel 161[1,1], the pixel 161 located in the first row and nth column is shown as pixel 161[1,n], the pixel 161 located in the m row and first column is shown as pixel 161[m,1], and the pixel 161 located in the m row and nth column is shown as pixel 161[m,n]. In some cases, the pixel 161 located in the u row and v column (where u is an integer between 1 and m, and v is an integer between 1 and n) is shown as pixel 161[u,v]. When describing matters common to multiple pixels 161, they may not be described with identification codes such as "[u,v]".

[0137] Furthermore, the display device 160 has m gate lines 165, each arranged in parallel, and whose potential is controlled by a circuit included in the gate driver unit 163. The potential of one gate line 165 is supplied to n pixels 161 arranged in the row direction. Depending on the configuration of the pixels 161, a configuration in which multiple wires are included per gate line 165 is also possible.

[0138] Furthermore, the display device 160 has n source lines 166, each arranged in parallel, and whose potential is controlled by a circuit included in the source driver unit 164. The potential of one source line 166 is supplied to m pixels 161 arranged in the column direction. Depending on the configuration of the pixels 161, each source line 166 may be configured to include multiple wires.

[0139] The circuit included in the gate driver unit 163 functions, for example, as a scan line drive circuit (sometimes called a gate line drive circuit, gate driver, scan driver, or low driver).

[0140] The circuit included in the source driver unit 164 functions, for example, as a signal line drive circuit (sometimes called a source line drive circuit, source driver, data driver, or column driver).

[0141] One of the circuits included in the control unit 167 functions, for example, as a power supply circuit. Another circuit included in the control unit 167 functions, for example, as a signal generation circuit.

[0142] The display device 160 does not necessarily have to have one or both of the source driver unit 164 and the control unit 167. For example, one or both of the source driver unit 164 and the control unit 167 may be provided on an IC (Integrated Circuit) chip located outside the display device 160. In this case, a part of the source driver unit 164 and the control unit 167 may be provided on the display device 160.

[0143] Figure 15B is a block diagram illustrating a modified example of the display device 160. The display device 160 shown in Figure 15B differs from the display device 160 shown in Figure 15A in that it has two gate driver units 163 arranged opposite each other via a pixel unit 162. In the configuration shown in Figure 15B, the potential of m gate lines 165 is controlled by the two gate driver units 163. With this configuration, for example, the actual wiring load (parasitic capacitance and parasitic resistance) can be reduced to 1 / 4 of the wiring load in the display device 160 shown in Figure 15A. Therefore, at least one of the following can be achieved for the display device 160: higher speed, higher resolution, higher resolution, narrower bezel, and larger screen.

[0144] In one aspect of the present invention, various transistors can be used as the transistors constituting the display device 160. For example, a Si transistor (a transistor containing silicon in its channel formation region) may be used, an OS transistor (a transistor containing oxide semiconductor in its channel formation region) may be used, or both a Si transistor and an OS transistor may be used.

[0145] OS transistors can be freely arranged on a silicon substrate, for example, on which Si transistors are mounted, making integration easy. Furthermore, since OS transistors can be manufactured using the same manufacturing equipment as Si transistors, they can be produced at low cost.

[0146] Therefore, in the display device 160, for example, Si transistors containing part of a silicon substrate may be used for the transistors constituting the source driver unit 164, and OS transistors provided on a silicon substrate may be used for the transistors constituting the gate driver unit 163 and the pixel unit 162, respectively. Furthermore, OS transistors may be used for at least a portion of the transistors constituting the source driver unit 164, and Si transistors may be used for at least a portion of the transistors constituting the gate driver unit 163 and the pixel unit 162, respectively.

[0147] Furthermore, various circuits (which may include arithmetic circuits, memory circuits, etc.) for controlling the operation of the display device 160 may be provided using Si transistors that include a portion of the silicon substrate. Thus, in one aspect of the present invention, for example, an OS transistor is arranged on a silicon substrate on which Si transistors are provided, and a display element or light-receiving element is arranged on the layer on which the OS transistors are provided.

[0148] In one aspect of the present invention, the gate driver unit 163 can use at least a portion of the various semiconductor devices 100 (such as semiconductor devices 100A to 100H) and the drive circuits having said semiconductor devices (such as drive circuits 110A and 110B). Furthermore, a power supply circuit that generates a constant potential supplied to the wiring VLS and wiring VLD can be provided in the control unit 167. Furthermore, a signal generation circuit that generates a signal supplied to the wiring CKL and the like can be provided in the control unit 167.

[0149] [Pixel] Examples of configurations applicable to the pixel 161 will be described. Here, an example of a pixel 161A having a light-emitting element LD and an example of a pixel 161B having a liquid crystal element LC will be described.

[0150] Figure 16A is a circuit diagram illustrating an example configuration of a pixel 161A having a light-emitting element LD. As an example, Figure 16A shows a semiconductor device 100A provided in the gate driver unit 163 and a pixel 161A[u,v] in the u row and v column provided in the pixel unit 162.

[0151] Pixel 161A[u,v] is connected to the gate line GL[u] and the source line SL[v]. The gate line GL[u] in the pixel section 162 is connected to the wiring OL in the gate driver section 163. Note that pixel 161A[u,v] may be simply referred to as pixel 161A, the gate line GL[u] as simply gate line GL, and the source line SL[v] as simply source line SL.

[0152] Pixel 161A, for example, includes transistor M31, transistor M32, and light-emitting element LD.

[0153] A light-emitting element (LD) emits light with an intensity corresponding to the amount of current flowing through it. As the light-emitting element (LD), for example, an electroluminescent element (especially an injection-type electroluminescent element) such as a light-emitting diode (LED) can be used. As the LED, for example, an LED using an inorganic material as the light-emitting substance, or an LED using an organic material as the light-emitting substance (also called an organic EL (Electroluminescence) element or OLED (Organic LED)) can be used. As an LED using an inorganic material as the light-emitting substance, for example, a mini-LED or micro-LED can be used.

[0154] Transistor M32 is provided in the current path from wiring ANO through the light-emitting element LD to wiring CATH, and has the function of controlling the amount of current supplied to the light-emitting element LD. A potential corresponding to the image signal is applied to the gate of transistor M32. Therefore, a gate voltage corresponding to the image signal is applied to transistor M32, a drain current based on the gate voltage flows, and this drain current is supplied to the light-emitting element LD. In this specification, a transistor having a function like that of transistor M32 is sometimes called a driving transistor.

[0155] Transistor M31 functions as a switch that controls whether or not to write the image signal supplied from the source line SL to the pixel 161A. For example, transistor M31 functions as a switch that controls whether or not to supply a potential corresponding to the image signal supplied from the source line SL to the gate of transistor M32.

[0156] Although not shown in the diagram, one terminal of a capacitive element that has the function of stabilizing the gate voltage of transistor M32 may be connected to the gate of transistor M32.

[0157] Furthermore, in addition to the above configuration, the pixel 161A may also have a transistor and a capacitive element. This makes it possible to realize a pixel with various functions, such as a function to correct threshold voltage variations of the driving transistor, a function to suppress the effects of the hysteresis characteristics of the driving transistor, and a function to initialize the voltage applied to the light-emitting element LD.

[0158] The gate of transistor M31 is connected to the gate line GL (corresponding to the wiring OL). Therefore, the pixels 161A of the pixel unit 162 are selected by the signal output from the semiconductor device 100A of the gate driver unit 163.

[0159] For example, to increase the light emission intensity of the light-emitting element LD, it is necessary to increase the gate voltage of transistor M32 in order to increase the amount of current supplied to the light-emitting element LD. This increases the amplitude of the image signal supplied from the source line SL. Therefore, in order to switch between the on and off states of transistor M31, it is necessary to increase the amplitude of the signal supplied to the gate line GL.

[0160] Therefore, in semiconductor device 100A, in order to increase the amplitude of the signal supplied to wiring OL (corresponding to gate wire GL), it is necessary to increase the amplitude of the signal supplied to wiring CKL. In semiconductor device 100A, even in such cases, the transient voltage applied between the gate and the other of the source or drain of transistor M11 can be reduced, thereby suppressing the destruction and degradation of transistor M11. Thus, the reliability of semiconductor device 100A can be improved while increasing the light emission intensity of the light-emitting element LD.

[0161] Figure 16B is a circuit diagram illustrating an example configuration of a pixel 161B having a liquid crystal element LC. As an example, Figure 16B shows a semiconductor device 100A provided in the gate driver unit 163 and a pixel 161B[u,v] in the u row and v column provided in the pixel unit 162.

[0162] Pixel 161B[u,v] is connected to the gate line GL[u] and the source line SL[v]. The gate line GL[u] in the pixel section 162 is connected to the wiring OL in the gate driver section 163. Note that pixel 161B[u,v] may be simply referred to as pixel 161B, the gate line GL[u] as simply gate line GL, and the source line SL[v] as simply source line SL.

[0163] Pixel 161B, for example, includes a transistor M31, a capacitive element C31, and a liquid crystal element LC.

[0164] One of the sources or drains of transistor M31 is connected to one terminal of the liquid crystal element LC and one terminal of the capacitive element C31. The other of the sources or drains of transistor M31 is connected to the source line SL. The gate of transistor M31 is connected to the gate line GL. The other terminal of the liquid crystal element LC is connected to the wiring COM. The other terminal of the capacitive element C31 is connected to the wiring CS.

[0165] A liquid crystal element (LC) transmits light with a transmittance that corresponds to the voltage applied between a pair of terminals.

[0166] The capacitive element C31 has the function of maintaining the voltage between the pair of terminals of the liquid crystal element LC.

[0167] Transistor M31 functions as a switch that controls whether or not to write the image signal supplied from the source line SL to the pixel 161B. For example, transistor M31 functions as a switch that controls whether or not to supply a potential corresponding to the image signal supplied from the source line SL to one terminal of the liquid crystal element LC.

[0168] The gate of transistor M31 is connected to the gate line GL (corresponding to the wiring OL). Therefore, the pixels 161B of the pixel unit 162 are selected by a signal output from the semiconductor device 100A of the gate driver unit 163.

[0169] Here, for example, the pixel 161B having a liquid crystal element LC is preferably driven by inverting drive in order to improve display quality. In inverting drive, the amplitude of the image signal supplied from the source line SL becomes larger. Therefore, in order to switch between the on and off states of transistor M31, it is necessary to increase the amplitude of the signal supplied to the gate line GL.

[0170] Therefore, in semiconductor device 100A, in order to increase the amplitude of the signal supplied to wiring OL (corresponding to gate wire GL), it is necessary to increase the amplitude of the signal supplied to wiring CKL. In semiconductor device 100A, even in such cases, the transient voltage applied between the gate and the other of the source or drain of transistor M11 can be reduced, thereby suppressing the destruction and degradation of transistor M11.

[0171] [Transistors] In one aspect of the present invention, n-channel transistors can be used as transistors constituting the display device 160. Furthermore, p-channel transistors may be used as at least a portion of the transistors constituting the display device 160.

[0172] Furthermore, as transistors constituting the display device 160, for example, transistors containing a single-crystal semiconductor, polycrystalline semiconductor, microcrystalline semiconductor, or amorphous semiconductor in the channel formation region can be used. In addition, the semiconductor is not limited to a single-element semiconductor whose main component is a single element (such as silicon or germanium), but can also be a compound semiconductor (such as silicon germanium or gallium arsenide), or an oxide semiconductor.

[0173] For example, as the transistors constituting the display device 160, a transistor containing silicon in the channel formation region (Si transistor) may be used, a transistor containing oxide semiconductor in the channel formation region (OS transistor) may be used, or both Si transistors and OS transistors may be used.

[0174] Furthermore, various types of transistors can be used as the transistors that make up the display device 160. For example, MOS field-effect transistors, junction field-effect transistors, or bipolar transistors can be used.

[0175] Furthermore, transistors of various structures can be used as the transistors constituting the display device 160. For example, transistors of various structures can be used, such as top-gate type (planar type, staggered type, etc.), bottom-gate type (inverse planar type, inverse staggered type, etc.), dual-gate type (a structure in which gates are arranged on both sides (e.g., top and bottom) of the channel formation region), FIN type, TRI-GATE type, or GAA type (gate all-around type). In addition, for example, vertical transistors (transistors in which the channel length direction has a component in the vertical direction (also called the height direction or the direction perpendicular to the surface to which it is formed)) can be used.

[0176] In the pixel 161A shown in Figure 16A, it is preferable to use a transistor with a small off-current for transistor M31. For example, an OS transistor can be used. This allows the image signal written to the pixel 161A to be retained for a long period of time. Therefore, for example, the display device can be operated at a low refresh rate, thereby reducing power consumption.

[0177] Furthermore, in the pixel 161A shown in Figure 16A, it is preferable to use a transistor with a small hysteresis width for transistor M32. For example, an OS transistor can be used as a transistor with a small hysteresis width. This can improve the display quality of the display device. In addition, in the pixel 161A, it may not be necessary to have a function to suppress the effects of the hysteresis characteristics of transistor M32, and the configuration of the pixel 161A can be simplified. This can reduce the layout area of ​​the pixels and improve the resolution of the display device.

[0178] Furthermore, in the pixel 161B shown in Figure 16B, it is preferable to use a transistor with a small off-current for transistor M31. For example, an OS transistor can be used as a transistor with a small off-current. This allows the image signal written to the pixel 161B to be retained for a long period of time. Therefore, for example, the display device can be operated at a low refresh rate, and power consumption can be reduced.

[0179] Furthermore, in the semiconductor device 100A shown in Figures 16A and 16B, it is preferable to use transistors with high on-currents for each of the transistors M11 to M14. This makes it possible to improve the operating speed of the semiconductor device 100A. Also, for example, even if the channel width of the transistor is reduced, a sufficient on-current can be easily obtained, so the layout area can be reduced. Therefore, the bezel width of the display device can be reduced.

[0180] In this case, in Figure 16A, it is preferable that the transistors constituting the pixel 161A and the semiconductor device 100A are manufactured using the same process. Therefore, it is preferable to use transistors that have characteristics of low off-current, low hysteresis width, and high on-current as the transistors constituting the pixel 161A and the semiconductor device 100A, respectively. Also, in Figure 16B, it is preferable that the transistors constituting the pixel 161B and the semiconductor device 100A are manufactured using the same process. Therefore, it is preferable to use transistors that have characteristics of low off-current and high on-current as the transistors constituting the pixel 161B and the semiconductor device 100A, respectively. Examples of such transistors include transistors that contain indium oxide in the channel formation region.

[0181] In the above description, the semiconductor device 100A provided in the gate driver unit 163 is merely an example and is not limited to it. Therefore, it is possible to replace semiconductor device 100A with other semiconductor devices (such as semiconductor devices 100B, 100C, 100D, 100E, 100F, 100G, or 100H), or a drive circuit having such a semiconductor device (such as drive circuit 110A or drive circuit 110B).

[0182] Furthermore, the contents of this embodiment can be combined as appropriate. Also, the contents of this embodiment can be combined as appropriate with the contents of other embodiments, etc.

[0183] (Embodiment 2) This embodiment describes a transistor according to one aspect of the present invention. At least a part of the transistor shown in this embodiment can be applied to the semiconductor device shown in Embodiment 1 described above, a drive circuit having said semiconductor device, and a display device, etc.

[0184] <Transistor Configuration Example 1> Figure 17A is a top view of a semiconductor device having a transistor 200A. Figure 17B is a cross-sectional view between A1 and A2, shown by a dashed line in Figure 17A. Figure 17C is a cross-sectional view between A3 and A4, shown by a dashed line in Figure 17A. Note that some elements have been omitted from the top view of Figure 17A for clarity. Some elements may also be omitted in other top views.

[0185] In the semiconductor device shown in Figures 17A to 17C, an insulating layer 202 is provided on a substrate 201, and a semiconductor layer 203 is provided on the insulating layer 202. Furthermore, an insulating layer 204 is provided on the insulating layer 202 and the semiconductor layer 203. In addition, a conductive layer 205 is provided on the insulating layer 204. In this case, the semiconductor layer 203 and the conductive layer 205 are provided such that they have overlapping regions with respect to the insulating layer 204.

[0186] The semiconductor layer 203 has a region 203a that functions as either the source region or the drain region of the transistor 200A, a channel-forming region 203c, and a region 203b that functions as the other of the source region or the drain region. In the semiconductor layer 203, the region that overlaps with the conductive layer 205 functions as the channel-forming region 203c. Therefore, the region of the conductive layer 205 that overlaps with the channel-forming region 203c functions as the gate electrode of the transistor 200A. Also, the region of the insulating layer 204 that overlaps with the channel-forming region 203c functions as the gate insulating film of the transistor 200A.

[0187] Furthermore, in the semiconductor layer 203, the shortest distance between region 203a and region 203b in the channel formation region 203c can be set to the channel length Lch of the transistor 200A (see Figures 17A and 17B). Also, in the semiconductor layer 203, the length of the portion where region 203a and region 203b face each other in the channel formation region 203c can be set to the channel width Wch of the transistor 200A (see Figures 17A and 17C).

[0188] Furthermore, in the semiconductor device shown in Figures 17A to 17C, an insulating layer 206 is provided on top of the insulating layer 204 and the conductive layer 205. In addition, an opening 207a is provided in the insulating layer 204 and the insulating layer 206 in the region overlapping with region 203a of the semiconductor layer 203. In addition, an opening 207b is provided in the insulating layer 204 and the insulating layer 206 in the region overlapping with region 203b of the semiconductor layer 203. Furthermore, a conductive layer 208a is provided on top of the insulating layer 206 and within the opening 207a, and a conductive layer 208b is provided on top of the insulating layer 206 and within the opening 207b. Furthermore, an insulating layer 209 is provided on top of the insulating layer 206 and the conductive layer 208 (conductive layer 208a and conductive layer 208b).

[0189] The conductive layer 208a is in contact with region 203a of the semiconductor layer 203 at the bottom of the opening 207a. Similarly, the conductive layer 208b is in contact with region 203b of the semiconductor layer 203 at the bottom of the opening 207b. Therefore, the conductive layer 208a functions as either the source electrode or the drain electrode of the transistor 200A, and the conductive layer 208b functions as either the source electrode or the drain electrode of the transistor 200A.

[0190] <Transistor Configuration Example 2> Figure 18A is a top view of a semiconductor device having transistor 200B. The semiconductor device having transistor 200B is a modified version of the semiconductor device having transistor 200A described above. To reduce repetition in the explanation, we will mainly explain the differences between the semiconductor device having transistor 200B and the semiconductor device having transistor 200A.

[0191] Figure 18B is a cross-sectional view between A1 and A2, shown by the dashed line in Figure 18A. Figure 18C is a cross-sectional view between A3 and A4, shown by the dashed line in Figure 18A.

[0192] The semiconductor device shown in Figures 18A to 18C differs from the semiconductor device shown in Figures 17A to 17C in that it has a conductive layer 215 between the substrate 201 and the insulating layer 202. The conductive layer 215 overlaps with the channel formation region 203c via the insulating layer 202. Therefore, the region of the insulating layer 202 that overlaps with the channel formation region 203c functions as the back gate insulating film of the transistor 200B, and the region of the conductive layer 215 that overlaps with the channel formation region 203c functions as the back gate electrode of the transistor 200B.

[0193] The insulating layer 202 may have different film thicknesses in the region overlapping with the conductive layer 215 and the region not overlapping with it, or it may have a uniform film thickness. The conductive layer 215 may also extend beyond the edge of the channel-forming region 203c. Although not shown in the figures, an insulating layer may be provided between the substrate 201 and the conductive layer 215.

[0194] In a transistor with a back gate, the transistor's gate and back gate are positioned so as to sandwich the channel formation region of the semiconductor layer. The back gate can function similarly to the gate. When the gate is used to control the on and off states of the transistor, the potential of the back gate can be the same as that of the gate. Alternatively, it can be set to any potential.

[0195] For example, when turning on a transistor, supplying the potential that turns the transistor on to both the gate and the back gate can increase the on-current compared to supplying it to only one. For example, by connecting the gate and the back gate, it is possible to keep the gate and back gate at the same potential at all times. Furthermore, by controlling the potential of the back gate independently of the gate potential, the threshold voltage of the transistor can be adjusted. For example, supplying the potential that turns the transistor on to the back gate can decrease the threshold voltage of the transistor, and supplying the potential that turns the transistor off to the back gate can increase the threshold voltage of the transistor.

[0196] Furthermore, a constant potential, such as ground potential, may be supplied to the back gate. Since the gate and back gate are formed by conductive layers, sandwiching the channel formation region of the semiconductor layer between the gate and back gate makes it difficult for electric fields generated outside the transistor to act on the channel formation region (also known as the "electric field shielding effect"). For this reason, providing a back gate to a transistor stabilizes its operation. In addition, providing a back gate to a transistor reduces the variation in characteristics between multiple transistors. Providing a back gate to a transistor can improve the reliability of the transistor. Therefore, the reliability of the semiconductor device containing the transistor can be improved. Note that the electric field shielding effect can be obtained even if one or both of the gate and back gate are electrically floating (also known as the "floating state"), but the effect can be enhanced by supplying potential to the gate and back gate.

[0197] <Transistor Components> Next, we will describe the components that can be used in transistor 200 (transistor 200A and transistor 200B).

[0198] [Substrate] When a transistor is mounted on a substrate, there are no major restrictions on the material used for the substrate. The material used for the substrate can be determined by considering factors such as whether or not it is translucent and whether it has sufficient heat resistance to withstand heat treatment, depending on the purpose. For example, an insulating substrate, a semiconductor substrate, or a conductive substrate may be used as the substrate. As an insulating substrate, for example, glass substrates such as barium borosilicate glass or aluminoborsilicate glass, ceramic substrates, quartz substrates, sapphire substrates, stabilized zirconia substrates (such as yttria-stabilized zirconia substrates) can be used. In addition, semiconductor substrates, flexible substrates, resin substrates, etc. may be used as the substrate.

[0199] Examples of semiconductor substrates include semiconductor substrates made from silicon or germanium, or compound semiconductor substrates made from silicon carbide, silicon germanium, gallium arsenide, indium phosphide, zinc oxide, or gallium oxide. Furthermore, there are semiconductor substrates having insulating regions within the above-mentioned semiconductor substrates, such as SOI (Silicon On Insulator) substrates. In addition, the semiconductor substrate may be a single-crystal semiconductor or a polycrystalline semiconductor.

[0200] Conductive substrates include graphite substrates, metal substrates, alloy substrates, and conductive resin substrates. There are also substrates containing metal nitrides and metal oxides. Furthermore, there are substrates with a conductive or semiconductor layer on an insulating substrate, substrates with a conductive or insulating layer on a semiconductor substrate, and substrates with a semiconductor or insulating layer on a conductive substrate.

[0201] Examples of materials that can be used for flexible substrates, resin substrates, etc. include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile, acrylic resin, polyimide, polymethyl methacrylate, polycarbonate (PC), polyethersulfone (PES), polyamide (nylon, aramid, etc.), polysiloxane, cycloolefin resin, polystyrene, polyamide-imide, polyurethane, polyvinyl chloride, polyvinylidene chloride, polypropylene, polytetrafluoroethylene (PTFE), ABS resin, cellulose nanofiber, and the like.

[0202] By using the above material as a substrate, a lightweight semiconductor device can be provided. Furthermore, by using the above material as a substrate, a semiconductor device that is resistant to impact can be provided. Furthermore, by using the above material as a substrate, a semiconductor device that is less prone to damage can be provided. In addition, devices on which elements are provided on these substrates may also be used. Elements provided on the substrate include capacitive elements, resistive elements, switch elements, light-emitting elements, and memory elements.

[0203] [Insulating Layer] An inorganic insulating film can be used for the insulating layer (insulating layer 202, insulating layer 204, insulating layer 206, insulating layer 209, etc.). Examples of inorganic insulating films include oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, tantalum oxide film, cerium oxide film, gallium zinc oxide film, and hafnium aluminate film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxide nitride film, aluminum oxide nitride film, gallium oxide nitride film, yttrium oxide nitride film, and hafnium oxide nitride film. Examples of nitride oxide insulating films include silicon oxide nitride film and aluminum oxide nitride film. In addition, an organic insulating film may be used for the insulating layer of the semiconductor device.

[0204] In this specification, "oxide nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content. The content of each element can be measured using methods such as Rutherford backscattering (RBS).

[0205] For example, as transistors become smaller and more integrated, the thinning of the gate insulating film can lead to problems such as gate leakage current. Therefore, by using a material with a high relative permittivity (high-k) for the insulating layer that functions as the gate insulating film, it becomes possible to lower the gate voltage applied during transistor operation while maintaining the physical film thickness. Furthermore, it becomes possible to thin the equivalent oxide thickness (EOT) of the gate insulating film. Additionally, by using a material with a high relative permittivity for the insulating layer that functions as the dielectric of a capacitive element, the capacitance per unit area can be increased. On the other hand, by using a material with a low relative permittivity for the insulating layer that functions as an interlayer film, parasitic capacitance between wiring can be reduced. Therefore, materials can be selected according to the function of the insulating layer. It should be noted that materials with a low relative permittivity also have high dielectric strength.

[0206] Examples of materials with a high dielectric constant include aluminum oxide, gallium oxide, hafnium oxide, tantalum oxide, zirconium oxide, hafnium-zirconium oxide, oxides containing aluminum and hafnium, oxides containing aluminum and hafnium, oxides containing silicon and hafnium, oxides containing silicon and hafnium, and nitrides containing silicon and hafnium.

[0207] Examples of materials with a low dielectric constant include inorganic insulating materials such as silicon oxide, silicon oxide-nitride, and silicon nitride-oxide, as well as resins such as polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, and acrylic resin. Other inorganic insulating materials with a low dielectric constant include, for example, silicon oxide with added fluorine, silicon oxide with added carbon, and silicon oxide with added carbon and nitrogen. Also, for example, silicon oxide with vacancies can be used. These silicon oxides may contain nitrogen.

[0208] [Conductive Layers] For the conductive layers used in the transistor 200 (conductive layer 205, conductive layer 208, conductive layer 215, etc.), it is preferable to use metal elements selected from aluminum, chromium, copper, silver, gold, platinum, zinc, tantalum, nickel, titanium, iron, cobalt, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, lanthanum, etc., alloys composed of the above metal elements, or alloys combining the above metal elements. As alloys composed of the above metal elements, nitrides of the alloy or oxides of the alloy may be used. For example, it is preferable to use tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel, etc. Alternatively, highly conductive semiconductors such as polycrystalline silicon containing impurity elements like phosphorus, or silicides such as nickel silicide, may be used.

[0209] Furthermore, it is preferable to use conductive materials that are resistant to oxidation, conductive materials that have a function to suppress oxygen diffusion, or materials that maintain conductivity even when absorbing oxygen. Examples of such materials include nitrogen-containing conductive materials such as tantalum-containing nitrides, titanium-containing nitrides, molybdenum-containing nitrides, tungsten-containing nitrides, ruthenium-containing nitrides, tantalum and aluminum-containing nitrides, and titanium and aluminum-containing nitrides. Examples of oxygen-containing conductive materials include ruthenium oxide, oxides containing strontium and ruthenium, and oxides containing lanthanum and nickel. Examples of materials containing metallic elements such as titanium, tantalum, and ruthenium are also included. Examples of oxygen-containing conductive materials include materials containing tungsten oxide and indium oxide, materials containing titanium oxide and indium oxide, indium tin oxide (also known as ITO), indium tin oxide containing titanium oxide, indium tin oxide containing silicon oxide (also known as ITSO), indium zinc oxide (also known as IZO®), and indium zinc oxide containing tungsten oxide. In this specification, a conductive layer formed using an oxygen-containing conductive material may be referred to as an oxide conductive layer.

[0210] Furthermore, it is preferable to use a conductive material with high conductivity, such as one mainly composed of tungsten, copper, or aluminum.

[0211] Furthermore, multiple conductive layers formed from the above materials may be used in a laminated structure. For example, a laminated structure may be formed by combining a material containing the above-mentioned metal element with a conductive material containing oxygen. Alternatively, a laminated structure may be formed by combining a material containing the above-mentioned metal element with a conductive material containing nitrogen. Alternatively, a laminated structure may be formed by combining a material containing the above-mentioned metal element with a conductive material containing oxygen and a conductive material containing nitrogen.

[0212] For example, in transistor 200A or transistor 200B, when an oxide semiconductor, which is a type of metal oxide, is used for the semiconductor layer 203, a laminated structure combining a material containing the aforementioned metal element and a conductive material containing oxygen may be used for conductive layers that function as gate electrodes, such as conductive layer 205 and conductive layer 215. In this case, the conductive material containing oxygen may be provided on the semiconductor layer 203 side. By providing the conductive material containing oxygen on the semiconductor layer 203 side, oxygen detached from the conductive material is more easily supplied to the channel formation region of the semiconductor layer 203.

[0213] Furthermore, when an oxide semiconductor, which is a type of metal oxide, is used as the semiconductor layer 203, the conductive layer 208 in contact with the semiconductor layer 203 may be made of a conductive material that is resistant to oxidation, a conductive material that maintains low electrical resistance even when oxidized, a conductive metal oxide (also called an oxide conductor), or a conductive material that has the function of suppressing oxygen diffusion. Examples of such conductive materials include conductive materials containing nitrogen and conductive materials containing oxygen. This makes it possible to suppress a decrease in the conductivity of the conductive layer 208.

[0214] By using an oxygen-containing conductive material as the conductive layer 208, conductivity can be maintained even if the conductive layer 208 absorbs oxygen. For example, even when an insulating layer containing excess oxygen is used as the insulating layer in contact with the conductive layer 208, the conductive layer 208 can maintain its conductivity. Examples of materials that can be used as the conductive layer 208 include ITO, ITSO, and IZO (registered trademarks).

[0215] [Semiconductor layer] As the semiconductor layer (semiconductor layer 203, etc.), single-crystal semiconductors, polycrystalline semiconductors, microcrystalline semiconductors, or amorphous semiconductors can be used individually or in combination.

[0216] As the semiconductor layer, a semiconductor composed of a single element or a compound semiconductor may be used. Examples of semiconductors composed of single elements include silicon and germanium. Examples of compound semiconductors include gallium arsenide, silicon carbide, and silicon germanium. Other examples of compound semiconductors include organic semiconductors and nitride semiconductors. Oxide semiconductors are also a type of compound semiconductor. These semiconductor materials may contain impurities as dopants.

[0217] When silicon is used as a semiconductor layer, examples of silicon that can be used for the semiconductor layer include single-crystal silicon, polycrystalline silicon, microcrystalline silicon, and amorphous silicon. As an example of polycrystalline silicon, low-temperature polysilicon (LTPS) is used.

[0218] For example, in transistor 200A or transistor 200B, if silicon is used for the semiconductor layer 203, it is possible to make the transistor function as an n-type transistor by including phosphorus or arsenic as an n-type dopant in regions 203a and 203b of the semiconductor layer 203. Furthermore, it is possible to make the transistor function as a p-type transistor by including boron as a p-type dopant in regions 203a and 203b of the semiconductor layer 203. Note that if both n-type and p-type dopants are present in regions 203a and 203b of the semiconductor layer 203, the conductivity type with the higher dopant concentration is more likely to manifest.

[0219] Furthermore, a two-dimensional material that functions as a semiconductor may be used as the semiconductor layer. Two-dimensional materials are also called layered materials and are a general term for a group of materials that have a layered crystalline structure. Layered materials have high conductivity within a unit layer (also called high two-dimensional conductivity). By using a material that functions as a semiconductor and has high two-dimensional conductivity as the semiconductor layer, it is possible to provide a transistor with a large on-current.

[0220] Examples of the above layer material include graphene, silicene, chalcogenides, etc. A chalcogenide is a compound containing a chalcogen (an element belonging to Group 16). Also, examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Specific examples of transition metal chalcogenides applicable as the semiconductor layer include molybdenum sulfide (typically MoS ２ ), molybdenum selenide (typically MoSe ２ ), molybdenum telluride (typically MoTe ２ ), tungsten sulfide (typically WS ２ ), tungsten selenide (typically WSe ２ ), tungsten telluride (typically WTe ２ ), hafnium sulfide (typically HfS ２ ), hafnium selenide (typically HfSe ２ ), zirconium sulfide (typically ZrS ２ ), zirconium selenide (typically ZrSe ２ ), etc.

[0221] Further, an oxide semiconductor, which is a kind of metal oxide, may be used as the semiconductor layer. At this time, the band gap of the metal oxide is preferably 2.0 eV or more, more preferably 2.5 eV or more. By using a metal oxide having a large band gap as the semiconductor layer, the off-current of the transistor can be significantly reduced. Since the OS transistor has a small off-current, the power consumption of the semiconductor device can be reduced.

[0222] In a transistor using an oxide semiconductor for the semiconductor layer, it is preferable that the channel formation region of the transistor has less oxygen deficiency or a lower impurity concentration (for example, the concentration of hydrogen, nitrogen, metal elements, etc.) than the source region and the drain region. Also, since VH (a defect in which hydrogen enters an oxygen deficiency) may be formed by hydrogen near the oxygen deficiency and electrons serving as carriers may be generated, V Ｏ H (a defect in which hydrogen enters an oxygen deficiency) is formed and electrons serving as carriers may be generated. Therefore, V ＯIt is also preferable that H is low. Thus, the channel formation region of the transistor is a high-resistance region with a low carrier concentration. Therefore, the channel formation region of the transistor can be said to be type i (intrinsic) or substantially type i.

[0223] Furthermore, the source and drain regions of the transistor have more oxygen vacancies than the channel formation region. Ｏ It is preferable that there is a high concentration of H or a high impurity concentration. Thus, the source region and drain region of the transistor have a higher carrier concentration and are low-resistance n-type regions than the channel formation region.

[0224] <Oxide Semiconductor Layer> Next, an oxide semiconductor layer that can be used as a semiconductor layer of a transistor according to one aspect of the present invention will be described.

[0225] The oxide semiconductor layer preferably contains a crystalline metal oxide. Examples of crystalline metal oxide structures include CAAC (c-axis aligned crystal) structure, polycrystalline structure, microcrystalline structure, and nanocrystalline (nc: nano-crystal) structure. By using a crystalline metal oxide in the oxide semiconductor layer, the defect level density in the oxide semiconductor layer can be reduced. Therefore, the reliability of transistors using oxide semiconductor layers can be improved, and the reliability of semiconductor devices on which such transistors are mounted can be improved.

[0226] The oxide semiconductor layer is preferably a metal oxide having a CAAC structure. A CAAC structure is a crystalline structure in which multiple microcrystals (typically multiple microcrystals having a hexagonal crystal structure) are oriented along the c axis, and in the a-b plane, the multiple microcrystals are linked together without orientation. Furthermore, when a cross-section of an oxide semiconductor layer having a CAAC structure is observed using a high-resolution transmission electron microscope (TEM), it can be confirmed that metal atoms are arranged in layers in the crystalline portion. Therefore, an oxide semiconductor layer having a CAAC structure can also be said to have a structure with layered crystalline portions.

[0227] The crystallinity of an oxide semiconductor layer can be analyzed, for example, by X-ray diffraction (XRD), TEM, or electron diffraction (ED). Alternatively, a combination of these methods may be used for analysis.

[0228] The crystallinity of the semiconductor material in the oxide semiconductor layer is not particularly limited. For example, the oxide semiconductor layer may include one or more amorphous semiconductors (semiconductors with an amorphous structure), single-crystal semiconductors (semiconductors with a single-crystal structure), or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in part). The crystallinity of the oxide semiconductor layer may suppress the degradation of transistor characteristics.

[0229] Examples of metal oxides include indium oxide, gallium oxide, and zinc oxide. Preferably, the metal oxide contains at least indium (In). Preferably, the metal oxide contains at least indium (In) or zinc (Zn). Preferably, the metal oxide contains two or three elements selected from indium, element M, and zinc. Element M is a metallic or metalloid element with a high bond energy to oxygen; for example, a metallic or metalloid element with a higher bond energy to oxygen than indium. Specific examples of element M include aluminum, gallium, tin, yttrium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, zirconium, molybdenum, hafnium, tantalum, tungsten, lanthanum, cerium, neodymium, magnesium, calcium, strontium, barium, boron, silicon, germanium, and antimony. The element M present in the metal oxide is preferably one or more selected from the above elements, more preferably one or more selected from aluminum, gallium, tin, and yttrium, and even more preferably gallium. When element M is gallium, the metal oxide preferably has one or more selected from indium, gallium, and zinc. In this specification, metal elements and metalloid elements are sometimes collectively referred to as "metal elements," and the "metal elements" described in this specification may include metalloid elements.

[0230] Examples of metal oxides include indium oxide. Other examples of metal oxides include indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium gallium oxide (In-Ga oxide), indium gallium aluminum oxide (In-Ga-Al oxide), indium gallium tin oxide (In-Ga-Sn oxide, also written as IGTO), indium tungsten oxide (In-W oxide), gallium zinc oxide (Ga-Zn oxide, also written as GZO), and aluminum zinc oxide (Al-Zn oxide, A Examples include indium aluminum zinc oxide (also written as ZO), indium aluminum zinc oxide (In-Al-Zn oxide, also written as IAZO), indium tin zinc oxide (also written as In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide, also written as IGZTO), and indium gallium aluminum zinc oxide (In-Ga-Al-Zn oxide, also written as IGAZO or IAGZO). In addition, examples of metal oxides include indium tin oxide containing silicon oxide (also called ITSO), gallium tin oxide (Ga-Sn oxide), and aluminum tin oxide (Al-Sn oxide).

[0231] By increasing the ratio of indium atoms to the sum of all metal element atoms contained in the metal oxide (also called the indium (In) content), the transistor can obtain at least one of a large on-current and high frequency characteristics.

[0232] The metal oxide may contain one or more metal elements with higher periodic numbers in the periodic table, instead of indium. Alternatively, the metal oxide may contain one or more metal elements with higher periodic numbers in the periodic table, in addition to indium. The greater the overlap of the metal element orbitals, the greater the carrier conduction in the metal oxide tends to be. Therefore, including metal elements with higher periodic numbers in the periodic table can sometimes increase the field-effect mobility of the transistor. Examples of metal elements with higher periodic numbers in the periodic table include metal elements belonging to the 5th period and metal elements belonging to the 6th period. Specifically, examples of such metal elements include yttrium, zirconium, silver, cadmium, tin, antimony, barium, lead, bismuth, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, and europium. Lanthanum, cerium, praseodymium, neodymium, promethium, samarium, and europium are called light rare earth elements.

[0233] Furthermore, metal oxides may contain one or more nonmetallic elements. The presence of nonmetallic elements in metal oxides can sometimes increase the field-effect mobility of transistors. Examples of nonmetallic elements include carbon, nitrogen, phosphorus, sulfur, selenium, fluorine, chlorine, bromine, and hydrogen.

[0234] Furthermore, by increasing the ratio of zinc atoms to the sum of the total number of atoms of all metal elements contained in the metal oxide, a highly crystalline metal oxide is obtained, which suppresses the diffusion of impurities in the metal oxide. Therefore, fluctuations in the electrical properties of the transistor are suppressed, and reliability can be improved.

[0235] Furthermore, by increasing the ratio of element M atoms to the sum of the total number of atoms of all metal elements contained in the metal oxide, the formation of oxygen vacancies in the metal oxide can be suppressed. Therefore, carrier generation caused by oxygen vacancies is suppressed, resulting in a transistor with low off-current. In addition, fluctuations in the electrical characteristics of the transistor are suppressed, and reliability can be improved.

[0236] Furthermore, the contents of this embodiment can be combined as appropriate. Also, the contents of this embodiment can be combined as appropriate with the contents of other embodiments, etc.

[0237] (Embodiment 3) In this embodiment, an example of a layout when the transistor shown in Embodiment 2 is applied to the semiconductor device shown in Embodiment 1 described above will be explained. Here, as an example, an example of the layout of the semiconductor device 100C shown in Figure 2A and the semiconductor device 100D shown in Figure 2B will be explained.

[0238] <Layout Examples> Figure 19A is a top view showing an example of a layout when transistor 200A shown in Figure 17 is applied as a transistor constituting semiconductor device 100C shown in Figure 2A. Figure 19B is a top view showing an example of a layout when transistor 200A shown in Figure 17 is applied as a transistor constituting semiconductor device 100D shown in Figure 2B. Figure 20A is a cross-sectional view between A1 and A2, indicated by dashed lines in Figures 19A and 19B. Figure 20B is a cross-sectional view between A3 and A4, indicated by dashed lines in Figures 19A and 19B. Figure 20C is a cross-sectional view between A5 and A6, indicated by dashed lines in Figures 19A and 19B.

[0239] Figures 19A and 19B illustrate semiconductor layers ac01, ac02, ac03, and ac04, which correspond to the semiconductor layer 203 on the insulating layer 202. Also, conductive layers ge01, ge02, ge03, ge04, ge05, and ge06, which correspond to the conductive layer 205 on the insulating layer 204, are illustrated. Furthermore, conductive layers me01, me02, me03, me04, me05, me06, me07, and me08, which correspond to the conductive layer 208 on the insulating layer 206, are illustrated.

[0240] Semiconductor layer ac01 has a channel formation region for transistor M11 and a channel formation region for transistor M12. Semiconductor layer ac02 has a channel formation region for transistor M11 and a channel formation region for transistor M12. Semiconductor layer ac03 has a channel formation region for transistor M13. Semiconductor layer ac04 has a channel formation region for transistor M14.

[0241] Conductive layer ge01 has a region that functions as the gate of transistor M11, a region that functions as the gate of transistor M13, a region that functions as one terminal of capacitive element C11, and a region that functions as node ND14. Conductive layer ge02 has a region that functions as the gate of transistor M12 and a region that functions as node ND12. Conductive layer ge03 has a region that functions as wiring VLS. Conductive layer ge04 has a region that functions as the gate of transistor M12 and a region that functions as wiring VLD. Conductive layer ge05 has a region that functions as node ND11.

[0242] In Figure 19A, the conductive layer ge06 has a region that functions as a VLD (Very Large Deadwall). In Figure 19B, the conductive layer ge06 has a region that functions as a CKL (Check Kilometer).

[0243] Conductive layer me01 has a region that functions as either the source or drain of transistor M11, a region that functions as either the source or drain of transistor M12, a region that functions as the other terminal of capacitive element C11, and a region that functions as wiring OL. Conductive layer me02 has a region that functions as the other source or drain of transistor M11 and a region that functions as wiring CKL. Conductive layer me03 has a region that functions as the other source or drain of transistor M12 and a region that functions as wiring VLS. Conductive layer me04 has a region that functions as wiring VLS. Conductive layer me05 has a region that functions as either the source or drain of transistor M13, a region that functions as either the source or drain of transistor M14, and a region that functions as node ND14. Conductive layer me06 has a region that functions as wiring VLD. Conductive layer me07 has a region that functions as the other source or drain of transistor M14 and a region that functions as node ND11. The conductive layer me08 has a region that functions as either the source or the drain of the transistor M14.

[0244] In Figure 19A, the conductive layer me08 has a region that functions as a VLD (Very Large Dead Panel). In Figure 19B, the conductive layer me08 has a region that functions as a CKL (Check Key Line).

[0245] Conductive layer me03 is connected to conductive layer ge03 at an opening in the insulating layer 206. Conductive layer me04 is connected to conductive layer ge03 at an opening in the insulating layer 206. Conductive layer me05 is connected to conductive layer ge01 at an opening in the insulating layer 206. Conductive layer me06 is connected to conductive layer ge04 at an opening in the insulating layer 206. Conductive layer me07 is connected to conductive layer ge05 at an opening in the insulating layer 206. Conductive layer me08 is connected to conductive layer ge06 at an opening in the insulating layer 206. Figure 20C illustrates how conductive layer me03 and conductive layer ge03 are connected to each other at an opening in the insulating layer 206.

[0246] In Figure 19A, the conductive layer me06 is connected to the conductive layer ge06 through an opening in the insulating layer 206. In Figure 19B, the conductive layer me02 is connected to the conductive layer ge06 through an opening in the insulating layer 206.

[0247] In Figures 19A and 19B, the conductive layer 205 (conductive layers ge01 to ge06) and the conductive layer 208 (conductive layers me01 to me08) are connected to each other at two openings. By configuring the conductive layer 205 and the conductive layer 208 to be connected to each other at multiple openings, the yield of semiconductor device 100C and semiconductor device 100D can be improved.

[0248] As shown in Figures 19A and 19B, the region where the semiconductor layer 203 (semiconductor layers ac01 to ac04) overlaps with the conductive layer 205 (conductive layers ge01 to ge06) functions as the channel formation region of the transistor (corresponding to the channel formation region 203c in Figures 17A to 17C). Therefore, the channel length of the transistor (corresponding to the channel length Lch in Figure 17B) corresponds to the width of the conductive layer 205 in the direction in which the semiconductor layer 203 extends, in the region where the semiconductor layer 203 and the conductive layer 205 overlap each other. Figures 19A and 19B show the channel length Lch11 of transistor M11, the channel length Lch12 of transistor M12, the channel length Lch13 of transistor M13, and the channel length Lch14 of transistor M14. Furthermore, the channel width of the transistor (corresponding to the channel width Wch in Figure 17C) corresponds to the width of the semiconductor layer 203 in the direction in which the conductive layer 205 extends, in the region where the semiconductor layer 203 and the conductive layer 205 overlap each other. Also, the area of ​​the channel formation region of the transistor (corresponding to channel length × channel width) corresponds to the area of ​​the region where the semiconductor layer 203 and the conductive layer 205 overlap each other.

[0249] In the transistors 200A applied to each transistor constituting semiconductor device 100C and semiconductor device 100D, multiple transistors 200A may share a semiconductor layer 203 that is provided in a continuous manner. Figures 19A and 19B illustrate how five transistors 200A share semiconductor layer ac01 and five transistors 200A share semiconductor layer ac02.

[0250] Furthermore, in Figures 19A and 19B, transistors M11 and M12 share semiconductor layers ac01 and ac02, respectively, as an example. For instance, of the five transistors 200A provided in semiconductor layer ac01, three are designated as transistors M11 and the remaining two as transistors M12. Similarly, of the five transistors 200A provided in semiconductor layer ac02, three are designated as transistors M11 and the remaining two as transistors M12. Figure 20A illustrates how transistors M11 and M12 share a continuous semiconductor layer ac01. In this way, by having multiple transistors 200A share a continuous semiconductor layer 203, the layout area of ​​the transistors can be reduced. Therefore, the layout area of ​​the semiconductor device can be reduced, and the bezel width of the display device can be reduced.

[0251] However, this is not limited to this configuration; two or more transistors may share a single semiconductor layer 203. For example, although not shown, transistors M13 and M14 may share a single semiconductor layer 203. This allows for a reasonable reduction in conductive layers and vias used to connect the semiconductor layers 203 to each other. As a result, the layout area of ​​the semiconductor device can be reduced, and the bezel width of the display device can be minimized.

[0252] Furthermore, in the transistors 200A applied to each transistor constituting semiconductor device 100C and semiconductor device 100D, a configuration in which multiple transistors 200A are connected in parallel may be used. In Figures 19A and 19B, transistor M11, as an example, has a configuration in which six transistors 200A are connected in parallel. Transistor M12, as an example, has a configuration in which four transistors 200A are connected in parallel. Figure 20B shows two transistors 200A as part of transistor M11. Figure 20C shows two transistors 200A as part of transistor M12. By using this configuration in which multiple transistors 200A are connected in parallel, the effective channel width can be increased, and the on-current can be increased. Therefore, the channel widths of transistors M11 and M12 can be made larger than the channel widths of other transistors (transistors M13 and M14, etc.), and the on-current can be increased. This shortens the time required to change the potential of the wiring OL (corresponding to the rise time and fall time), and improves the operating speed.

[0253] As described in Embodiment 1 above, in order to reduce the on-current of transistor M13, the channel length of transistor M13 may be made larger than the channel lengths of transistors M11, M12, and M14. This makes it possible to speed up the rise time of the potential of wiring OL.

[0254] The channel widths of transistor M11 and transistor M12 may be the same or different. Figures 19A and 19B show an example where the channel width of transistor M11 is larger than that of transistor M12. During the operation of semiconductor device 100C and semiconductor device 100D, the potential of wiring CKL is supplied to wiring OL via transistor M11, causing the potential of wiring OL to rise or fall. For this reason, it is preferable to increase the channel width of transistor M11 and increase the on-current.

[0255] In Figures 19A and 19B, the channel length (corresponding to the width of the conductive layer 205) and channel width (corresponding to the width of the semiconductor layer 203) of each transistor 200A in transistors M11 and M12 are configured to be the same as the channel length and channel width of transistor 200A in transistor M14. In this way, when increasing the on-current of a transistor, by connecting multiple transistors with the same channel length and channel width in parallel, it is possible to reduce variations in the characteristics of the transistors.

[0256] Furthermore, to increase the on-current of the transistors, the channel length of each 200A transistor may be reduced, or the channel width of each 200A transistor may be increased. This reduces the number of transistors connected in parallel when obtaining the same on-current. As a result, the layout area of ​​the semiconductor device can be reduced, and the bezel width of the display device can be reduced.

[0257] Figure 21A shows an example of the layout of semiconductor device 100C in which the channel width of each transistor 200A in transistors M11 and M12 is larger than the channel width of each transistor 200A in transistors M11 and M12 shown in Figure 19A. In this case, the channel width of each transistor 200A in transistors M11 and M12 is larger than the channel width of each transistor 200A in transistors M13 and M14. As a result, for example, by configuring transistor M11 with three transistors 200A connected in parallel and transistor M12 with two transistors 200A connected in parallel, the number of transistors connected in parallel can be reduced when obtaining the same on-current. Therefore, the layout area of ​​the semiconductor device can be reduced, and the bezel width of the display device can be reduced. The same applies to the layout of semiconductor device 100D.

[0258] As shown in Figures 19A and 19B, the capacitive element C11 can be configured such that a portion of the insulating layer 206 functions as a dielectric in the region where the conductive layer ge01 and the conductive layer me01 overlap each other. Figure 20B illustrates, as an example, a capacitive element C11 in which a portion of the insulating layer 206 functions as a dielectric, and portions of the conductive layer ge01 and the conductive layer me01 each function as a pair of terminals.

[0259] In Figures 19A and 19B, in the capacitive element C11, the conductive layer me01 is positioned inside the outer edge of the conductive layer ge01, except for the lead-out portion (in some cases, the conductive layer ge01 is positioned to encompass the conductive layer me01). For example, in the capacitive element C11, the outer edge of the region of the conductive layer ge01 that overlaps with the conductive layer me01 has a portion that is inscribed with the outer edge of the conductive layer ge01 and a portion that is not inscribed with the outer edge of the conductive layer ge01, and the sum of the lengths of the portions that are not inscribed with the outer edge of the conductive layer ge01 is greater than the sum of the lengths of the portions that are inscribed with the outer edge of the conductive layer ge01. Alternatively, although not shown, for example, the entire outer edge of the region may be positioned inside the outer edge of the conductive layer ge01 without being inscribed with the outer edge of the conductive layer ge01. As a result, the region of the capacitive element C11 that functions as a dielectric is composed of an insulating layer 206 with a uniform thickness. Therefore, the accuracy of the capacitance of the capacitive element C11 can be improved.

[0260] Although not shown in the diagram, in the capacitive element C11, the conductive layer ge01 may be positioned inside the outer edge of the conductive layer me01, excluding the lead-out portion (in some cases, the conductive layer me01 may be positioned so as to encompass the conductive layer ge01). This allows the insulating layer between the side surface of the conductive layer ge01 and the side surface of the conductive layer me01 covering it to also be used as the dielectric of the capacitive element C11. As a result, it becomes easier to increase the capacitance per unit area and reduce the layout area. Therefore, the bezel width of the display device can be reduced.

[0261] Furthermore, in the capacitive element C11, when the conductive layer me01 is positioned inside the outer edge of the conductive layer ge01, excluding the lead-out portion, the area in which the conductive layer me01 covers the edge of the conductive layer ge01 can be reduced compared to when the conductive layer ge01 is positioned inside the outer edge of the conductive layer me01, excluding the lead-out portion. Therefore, the concern that dielectric breakdown of the insulating layer 206 may occur due to electric field concentration on the insulating layer 206 at the edge of the conductive layer ge01 can be reduced. Thus, reliability can be improved.

[0262] Outside the region where the capacitive element C11 is located, the region where conductive layers overlap each other via an insulating layer (for example, the region where conductive layer 205 (conductive layers ge01 to ge06) and conductive layer 208 (conductive layers me01 to me08) overlap each other) becomes a parasitic capacitance where a part of the insulating layer (for example, insulating layer 206) functions as a dielectric. Therefore, it is preferable that the area of ​​the region where the conductive layers that constitute this parasitic capacitance overlap each other is smaller than the area of ​​the capacitive element C11 (in this case, corresponding to the area of ​​the region where conductive layer ge01 and conductive layer me01 overlap each other).

[0263] Therefore, in Figures 19A and 19B, for example, it is preferable that the area of ​​the capacitive element C11 is larger than the area of ​​the region where the conductive layer ge01 and the conductive layer 208 other than the conductive layer me01 overlap each other. Also, it is preferable that the area of ​​the capacitive element C11 is larger than the area of ​​the region where the conductive layer 205 other than the conductive layer ge01 and the conductive layer me01 overlap each other. For example, it is preferable that the area of ​​the capacitive element C11 is larger than the area where the conductive layer ge01 and the conductive layer me02 overlap each other, and it is preferable that it is larger than the area where the conductive layer ge01 and the conductive layer me04 overlap each other.

[0264] Although not shown in the figures, a configuration may be used in which, for example, a part of the insulating layer 204 functions as a dielectric, and a part of the semiconductor layer 203 and the conductive layer 205 each functions as a pair of terminals. Alternatively, for example, a configuration may be used in which a part of the insulating layer 204 and the insulating layer 206 each functions as a dielectric, and a part of the semiconductor layer 203 and the conductive layer 208 each functions as a pair of terminals. Alternatively, for example, a conductive layer (not shown) may be provided between the substrate 201 and the insulating layer 202, and a part of the insulating layer 202 and the insulating layer 204 each functions as a dielectric, and a part of the conductive layer (not shown) and the conductive layer 205 each functions as a pair of terminals. Alternatively, for example, a conductive layer (not shown) may be provided between the substrate 201 and the insulating layer 202, and a part of the insulating layer 202 functions as a dielectric, and a part of the conductive layer (not shown) and the semiconductor layer 203 each functions as a pair of terminals.

[0265] As shown in Figures 19A and 19B, the width of the wiring CKL (corresponding here to the wiring width of conductive layer me02) is made larger than the width of the wiring VLD (corresponding here to the wiring width of conductive layer me06). Also, the width of the wiring VLS (corresponding here to the wiring width of conductive layer me04) is made larger than the width of the wiring VLD.

[0266] The potential of wiring CKL is supplied to wiring OL, to which one row of pixels are connected. At this time, the current flowing through wiring CKL momentarily increases, causing a large voltage drop in wiring CKL, which raises concerns about its impact on circuit operation. To suppress the effect of this voltage drop in wiring CKL, it is preferable to increase the width of wiring CKL. The same applies to wiring VLS. However, since a large current may flow momentarily through wiring VLD as well, it is preferable to increase the width of wiring VLD as well. However, if the widths of wiring CKL, wiring VLS, and wiring VLD are all increased in this way, the layout area will increase. Therefore, by prioritizing the increase in the width of wiring where the momentarily large current flows, it is possible to suppress the increase in layout area while suppressing the effect of voltage drop. In addition, by prioritizing the increase in the width of wiring where the momentarily large current flows, the current density within the wiring can be reduced. This makes it less likely for wiring to break or short-circuit due to electromigration, thereby improving reliability.

[0267] Specifically, the instantaneous current flowing through wiring CKL and wiring VLS is greater than the instantaneous current flowing through wiring VLD. Therefore, the width of wiring CKL may be made larger than the width of wiring VLD. Similarly, the width of wiring VLS may be made larger than the width of wiring VLD. This makes it possible to suppress the effects of voltage drop in wiring CKL and wiring VLS while suppressing an increase in layout area.

[0268] Here, in Figures 19A and 19B, for example, there are concerns about the impact on circuit operation due to parasitic capacitance in the overlapping regions of conductive layer me02 having a region that functions as wiring CKL, conductive layer ge01 having a region that functions as node ND14, and conductive layer ge02 having a region that functions as node ND12. Furthermore, there are concerns about the impact on circuit operation due to parasitic capacitance in the overlapping regions of conductive layer me04 having a region that functions as wiring VLS, conductive layer ge01 having a region that functions as node ND14, and conductive layer ge02 having a region that functions as node ND12. Furthermore, there are concerns about the impact on circuit operation due to parasitic capacitance in the overlapping regions of conductive layer me06 having a region that functions as wiring VLD, conductive layer ge05 having a region that functions as node ND11, and conductive layer ge02 having a region that functions as node ND12. Therefore, although not shown in the diagram, in order to suppress the effects of these parasitic capacitances, for example, in the region where the above-mentioned conductive layers overlap, the wiring width of one or both conductive layers may be selectively reduced, or openings may be formed in one or both conductive layers. The same applies to overlaps of other conductive layers where parasitic capacitances may be formed.

[0269] Figure 21B shows an example of a semiconductor device 100C layout in which an opening is formed in the conductive layer me02 in the region where the conductive layer me02 and conductive layer ge01 overlap each other, thereby selectively reducing the wiring width of the conductive layer ge01. It also shows an example of a configuration in which an opening is formed in the conductive layer me02 in the region where the conductive layer me02 and conductive layer ge02 overlap each other, thereby selectively reducing the wiring width of the conductive layer ge02. Furthermore, it shows an example of a configuration in which an opening is formed in the conductive layer me04 in the region where the conductive layer me04 and conductive layer ge01 overlap each other, thereby selectively reducing the wiring width of the conductive layer ge01. Finally, it shows an example of a configuration in which an opening is formed in the conductive layer me04 in the region where the conductive layer me04 and conductive layer ge02 overlap each other, thereby selectively reducing the wiring width of the conductive layer ge02. Furthermore, an example is shown in which the wiring widths of conductive layer me06 and conductive layer ge05 are selectively reduced in the region where they overlap. Similarly, an example is shown in which the wiring widths of conductive layer me06 and conductive layer ge02 are selectively reduced in the region where they overlap. It is not necessary to apply all of these methods; at least some may be applied. The same applies to the layout of semiconductor device 100D.

[0270] Furthermore, the technical concepts, configurations, operations, and effects described in this embodiment are not limited to semiconductor device 100C and semiconductor device 100D, but can be applied to various semiconductor devices shown in Embodiment 1 above (semiconductor device 100A, semiconductor device 100B, semiconductor device 100E, semiconductor device 100F, semiconductor device 100G, semiconductor device 100H, etc.), and to drive circuits having said semiconductor devices (drive circuit 110A, drive circuit 110B, etc.).

[0271] Furthermore, the contents of this embodiment can be combined as appropriate. Also, the contents of this embodiment can be combined as appropriate with the contents of other embodiments, etc.

[0272] (Embodiment 4) This embodiment describes a display device according to one aspect of the present invention.

[0273] Furthermore, at least a portion of the semiconductor device, the drive circuit having the semiconductor device, and the display device described in Embodiment 1 above can be applied to the display device shown in this embodiment and the module having the display device.

[0274] Here, examples of modules having the display device include modules to which a connector such as a flexible printed circuit board (FPC) or a TCP (Tape Carrier Package) is attached, or modules on which an integrated circuit (IC) is mounted using a COG (Chip On Glass) method or a COF (Chip On Film) method.

[0275] <Example of Display Device Configuration> Figure 22A is a perspective view showing an example of the configuration of a display device 400 according to one aspect of the present invention.

[0276] The display device 400 has a configuration in which substrate 409 and substrate 401 are bonded together. In Figure 22A, substrate 409 is shown with a dashed line.

[0277] The display device 400 includes a display unit 402, a circuit unit 403, a circuit unit 404, a connection unit 405, and a wiring unit 406. Figure 22A shows an example in which an IC chip 407 and an FPC 408 are mounted on the display device 400. Therefore, the configuration shown in Figure 22A can also be described as a display module having a display device 400, an IC chip, and an FPC.

[0278] Furthermore, at least a portion of the semiconductor device (semiconductor device 100A to 100H), the drive circuit (drive circuit 110A and drive circuit 110B) having the semiconductor device, and the display device 160 shown in Embodiment 1 above can be applied to the display device 400. For example, at least a portion of the gate driver unit 163, source driver unit 164, and control unit 167 shown in Embodiment 1 above can be applied to the circuit unit 403 and circuit unit 404. Also, for example, at least a portion of the pixel unit 162 shown in Embodiment 1 above can be applied to the display unit 402. Also, for example, at least a portion of the semiconductor device (semiconductor device 100A to 100H), the drive circuit (drive circuit 110A and drive circuit 110B) having the semiconductor device, as shown in Embodiment 1 above can be applied to the circuit unit 403 and circuit unit 404. Also, for example, at least a portion of the gate driver unit 163, source driver unit 164, and control unit 167 shown in Embodiment 1 above can be applied to the IC chip 407.

[0279] Circuit section 403 includes, for example, a scan line drive circuit (also called a gate driver or scan driver). Circuit section 404 also includes, for example, a signal line drive circuit (also called a source driver or data driver).

[0280] The wiring section 406 has the function of supplying signals and power to the display section 402, the circuit section 403, and the circuit section 404. These signals and power are input to the wiring section 406 from outside the display device 400 via the FPC 408, or from the IC chip 407 to the wiring section 406.

[0281] Figure 22A shows an example in which an IC chip 407 is provided on the substrate 401 using a COG (Camera-Owned Gauge) or COF (Camera-Owned Frame) method. The IC chip 407 can be, for example, an IC chip having one or both of a scan line drive circuit and a signal line drive circuit. The IC chip may also have a power supply circuit, a signal generation circuit, etc. The display device 400 and the display module may be configured without an IC chip. The IC chip may also be mounted on an FPC (Flexible Printed Circuit) using a COF method or the like.

[0282] Furthermore, a scan line driving circuit may be configured in either or both of the IC chip 407 and the circuit section 403. In this case, the IC chip 407 may be referred to as a gate driver IC. Alternatively, a signal line driving circuit may be configured in either or both of the IC chip 407 and the circuit section 404. In this case, the IC chip 407 may be referred to as a source driver IC.

[0283] The display unit 402 is the area in the display device 400 that displays an image, and has a plurality of pixels 411 arranged periodically. Figure 22A shows a magnified view of one pixel 411.

[0284] The pixel 411 shown in Figure 22A has a pixel 412R that emits red (R) light, a pixel 412G that emits green (G) light, and a pixel 412B that emits blue (B) light. Full-color display can be achieved by configuring one pixel 411 with pixels 412R, 412G, and 412B. Pixels 412R, 412G, and 412B each function as sub-pixels. The display device 400 shown in Figure 22A shows an example in which the sub-pixels 412R, 412B, and 412G are arranged in a stripe array. Note that the number of sub-pixels constituting one pixel 411 is not limited to three, but may be four or more. For example, there may be four sub-pixels that emit R, G, B, and white (W) light, respectively. Alternatively, there may be four sub-pixels that emit R, G, B, and yellow (Y) light, respectively.

[0285] In this specification, elements related to red light may be denoted with the identification code "R," elements related to green light with the identification code "G," and elements related to blue light with the identification code "B" to explain each respective matter. In addition, common matters may be explained by not assigning these identification codes. For example, when it is necessary to distinguish between multiple pixels 412, they may be indicated as pixel 412R, pixel 412G, or pixel 412B. Also, when it is not necessary to distinguish between pixels 412R, pixel 412G, and pixel 412B, they may simply be indicated as pixel 412.

[0286] Each pixel 412R, pixel 412G, and pixel 412B includes a display element and a circuit (pixel circuit) that controls the driving of the display element.

[0287] The connection portion 405 is provided on the outside of the display portion 402. The connection portion 405 can be provided along one or more sides of the display portion 402. There may be one or more connection portions 405. Figure 22A shows an example in which the connection portion 405 is provided so as to surround all four sides of the display portion. At the connection portion 405, one of the pair of electrodes of the display element is connected to the wiring portion 406, and a potential can be supplied to one of the pair of electrodes.

[0288] The substrates 401 and 409 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, or semiconductor, respectively. It is preferable to use a light-transmitting material for the substrate that extracts light from the display element (in this case, substrate 409). A polarizing plate may also be used as at least one of the substrates 401 and 409. Furthermore, flexible materials can be used for substrates 401 and 409. This increases the flexibility of the display device, enabling the creation of flexible displays (bendable displays, foldable displays, rollable displays, slidable displays, stretchable displays, etc.).

[0289] Furthermore, a display device according to one aspect of the present invention may also function as a touch panel. For example, various detection elements (also called sensor elements) capable of detecting the proximity or contact of an object to be detected, such as a finger, can be applied to the display device.

[0290] Examples of sensor types include capacitive, resistive, surface acoustic wave, infrared, optical, and pressure-sensitive sensors.

[0291] Examples of capacitance methods include surface capacitance and projected capacitance. Examples of projected capacitance methods include self-capacitance and mutual capacitance. Mutual capacitance is preferred because it enables simultaneous multi-point detection.

[0292] Examples of touch panels include out-cell, on-cell, and in-cell types. An in-cell touch panel refers to a configuration in which electrodes constituting a sensing element are provided on one or both of the substrate supporting the display element (also called a display device) and the opposing substrate.

[0293] [Pixel Arrangement] Figures 22B to 22F are top views illustrating the pixel arrangement. In a display device according to one embodiment of the present invention, there are no particular limitations on the pixel arrangement, and various arrangements can be applied. Examples of pixel arrangements include stripe arrangement (see Figure 22B), S-stripe arrangement (see Figure 22C), delta arrangement (see Figure 22D), zigzag arrangement (see Figure 22E), and pentile arrangement (see Figure 22F). Other examples include mosaic arrangement, diamond arrangement, and Bayer arrangement. The pentile arrangement shown in Figure 22F includes a pixel 411 composed of pixels 412R and 412G, and a pixel 411 composed of pixels 412B and 412G.

[0294] Furthermore, in Figures 22B to 22F, the top surface shape of each sub-pixel (pixel 412R, pixel 412G, and pixel 412B) can be, for example, a triangle, a quadrilateral (including rectangles and squares), a pentagon, a polygon with rounded corners, an ellipse, or a circle. Here, the top surface shape of each sub-pixel corresponds to the top surface shape of the display area of ​​the display element that each sub-pixel possesses. The top surface shape and size of each sub-pixel can be determined independently. Note that the arrangement of pixels 412R, 412G, and 412B may be changed as appropriate. Also, the display elements and the pixel circuits may be arranged in the same way or in different ways.

[0295] [Display Elements] Various elements can be used as display elements, for example, liquid crystal elements and light-emitting elements. In addition, display elements using shutter-type or optical interference-type MEMS (Micro Electro Mechanical Systems), microcapsule-type, electrophoretic-type, electrowetting-type, or electronic powder fluid (registered trademark)-type may also be used. Furthermore, QLED (Quantum-dot LED) using a light source and color conversion technology using quantum dot materials may also be used.

[0296] Examples of display devices using liquid crystal elements include transmissive liquid crystal display devices, reflective liquid crystal display devices, and semi-transmissive liquid crystal display devices.

[0297] Modes that can be used in display devices using liquid crystal elements include, for example, Vertical Alignment (VA) mode, FFS (Fringe Field Switching) mode, IPS (In-Plane-Switching) mode, TN (Twisted Nematic) mode, ASM (Axially Symmetric aligned Micro-cell) mode, OCB (Optically Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, and ECB (Electrically Examples of VA modes include Controlled Birefringence mode and guest host mode. Examples of VA modes include MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment) mode, and ASV (Advanced Super View) mode.

[0298] Examples of liquid crystal materials that can be used in liquid crystal elements include thermotropic liquid crystals, low molecular weight liquid crystals, polymer liquid crystals, polymer dispersed liquid crystals (PDLC), polymer network liquid crystals (PNLC), ferroelectric liquid crystals, and antiferroelectric liquid crystals. Depending on the conditions, these liquid crystal materials exhibit a cholesteric phase, smectic phase, cubic phase, chiral nematic phase, isotropic phase, or blue phase. Furthermore, either positive-type or negative-type liquid crystals may be used as the liquid crystal material.

[0299] As light-emitting elements, for example, field-emitting elements (such as injection-type field-emitting elements) such as LEDs using inorganic materials as the light-emitting material, organic EL elements (also called OLEDs), or semiconductor lasers (also called laser diodes) can be used. As LEDs using inorganic materials as the light-emitting material, for example, mini-LEDs or micro-LEDs can be used.

[0300] Examples of light-emitting materials for light-emitting devices include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and inorganic compounds (such as quantum dot materials).

[0301] The light-emitting element can emit light of colors such as red, green, blue, blue-green, reddish-purple, yellow, or white. It may also emit ultraviolet or infrared light. Furthermore, the color purity can be improved by adding a microcavity structure to the light-emitting element.

[0302] Of the pair of electrodes in a light-emitting element, one electrode functions as the anode (also called the positive electrode), and the other electrode functions as the cathode (also called the negative electrode).

[0303] In addition, in display devices using liquid crystal elements, the above-mentioned light-emitting elements may be used as the light source of the display device (backlight, edge light, side light, front light, etc.).

[0304] <Example of Cross-Sectional Structure of Display Device> Figure 23 is a cross-sectional view illustrating an example of the cross-sectional structure of a display device according to one embodiment of the present invention.

[0305] In the display device 490 shown in Figure 23, the configurations shown in regions 490a, 490b, and 490c can be used in the display device 400, respectively. For example, the configuration shown in region 490a can be used in the region where the pixels 412 are provided. The configuration shown in region 490b can be used in the region where the circuit sections 403 and 404 are provided. The configuration shown in region 490c can be used in the region where the FPC 408 is provided.

[0306] Region 490a corresponds to the region where the pixel 161 (corresponding to pixel 161A, etc.) shown in Embodiment 1 described above is provided. Therefore, the transistors provided in region 490a correspond to the transistors (transistor M31, transistor M32, etc.) that the pixel 161A, etc., shown in Embodiment 1 described above has. Region 490b corresponds to the region where the gate driver unit 163 (corresponding to semiconductor device 100A, etc.), source driver unit 164, and control unit 167, etc., shown in Embodiment 1 described above are provided. Therefore, the transistors provided in region 490b correspond to the transistors (transistors M11 to M14, etc.) that the semiconductor device 100A, etc., shown in Embodiment 1 described above has.

[0307] The display device 490 has a substrate 310 (corresponding to the substrate 401 described above) and a substrate 350 (corresponding to the substrate 409 described above). Furthermore, there is an adhesive layer 340 between the substrates 310 and 350. The substrate 350 faces the substrate 310 via the adhesive layer 340. Note that region 490c does not have the substrate 350 or the adhesive layer 340.

[0308] An insulating layer 312 is provided on the substrate 350 side of the substrate 310. Transistors and light-emitting elements are provided on the insulating layer 312.

[0309] Here, as an example, a configuration is shown in which the transistor 200A shown in Embodiment 2 above is provided in both region 490a and region 490b. Furthermore, a configuration is shown in which the transistor 200B shown in Embodiment 2 above is provided in region 490a.

[0310] Furthermore, the transistors provided in regions 490a and 490b are not limited to structures like transistor 200A and transistor 200B. Various transistor structures can be provided in regions 490a and 490b. In this case, one type of transistor structure may be provided, or two or more different transistor structures may be provided.

[0311] Furthermore, a conductive layer 364 is provided in region 490c. The conductive layer 364 can be formed using the same process as the conductive layer 208 (conductive layer 208a, conductive layer 208b, etc.) in transistors 200A and 200B.

[0312] An insulating layer 218 is provided so as to cover transistors 200A and 200B.

[0313] In region 490a, a pixel electrode 321 is provided on the insulating layer 218. The pixel electrode 321 is in contact with the conductive layer 208b at openings provided in the insulating layer 218 and the insulating layer 209. In addition, an insulating layer 322 is provided on the insulating layer 218. The insulating layer 322 has a region that covers the end of the pixel electrode 321.

[0314] Furthermore, an EL layer 324 is provided so as to cover the insulating layer 322 and the pixel electrode 321. A common electrode 327 is provided so as to cover the EL layer 324. A protective layer 328 is provided so as to cover the common electrode 327.

[0315] The pixel electrode 321 and the common electrode 327 overlap via the EL layer 324, and the region where the pixel electrode 321 and the EL layer 324 are in contact with each other, and where the EL layer 324 and the common electrode 327 are in contact, functions as a light-emitting element 320. The pixel electrode 321 functions as one electrode (or first terminal) of the light-emitting element 320, and the common electrode 327 functions as the other electrode (or second terminal). The EL layer 324 has the function of emitting light with an intensity corresponding to the amount of current flowing between the pixel electrode 321 and the common electrode 327 via the EL layer 324.

[0316] The light-emitting element 320 corresponds to the light-emitting element LD found in the pixel 161A, etc., as shown in Embodiment 1 described above.

[0317] A light-shielding layer 352 is provided on the substrate 310 side of the substrate 350.

[0318] In region 490a, the light-shielding layer 352 is provided with an opening that overlaps with the light-emitting element 320. Therefore, the light emitted from the light-emitting element 320 is emitted to the outside of the display device 490 through the opening in the light-shielding layer 352. In Figure 23, this is represented by a dashed arrow and the label "Light".

[0319] In region 490c, a conductive layer 366 is provided on a portion of the insulating layer 218. The conductive layer 366 is in contact with the conductive layer 364 at openings provided in the insulating layer 218 and the insulating layer 209.

[0320] The conductive layer 364 can be provided in the same layer as the conductive layer 208. Therefore, the conductive layer 364 can have the same material as the conductive layer 208 and can be formed in the same process. For example, the conductive layer 208 and the conductive layer 364 can be formed by processing the same conductive film. Also, the conductive layer 366 can be provided in the same layer as the pixel electrode 321. Therefore, the conductive layer 366 can have the same material as the pixel electrode 321 and can be formed in the same process. For example, the pixel electrode 321 and the conductive layer 366 can be formed by processing the same conductive film. In region 490c, the conductive layer 366 is exposed. This allows the conductive layer 366 and the FPC 408 to be connected via the connecting layer 368.

[0321] As the connecting layer 368, an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP) can be used.

[0322] <Examples of light-emitting element configurations> In one aspect of the present invention, when a display device has a light-emitting element, various configurations of light-emitting elements can be used.

[0323] Figures 24A, 24B, 25A, and 25B are cross-sectional views illustrating various configurations of light-emitting elements.

[0324] [Configuration Example 1] The display device 490A shown in Figure 24A has light-emitting elements 320R, 320G, and 320B between the substrate 310 and the substrate 350. Light-emitting element 320R is a display element with a pixel that emits red light, light-emitting element 320G is a display element with a pixel that emits green light, and light-emitting element 320B is a display element with a pixel that emits blue light. When describing things common to light-emitting elements 320R, 320G, and 320B, they may simply be referred to as light-emitting element 320.

[0325] Note that in Figure 24A, some details of the configuration between the substrate 310 and the light-emitting element 320, and the configuration between the substrate 350 and the light-emitting element 320 are omitted. The display device 490A has, for example, transistors constituting a pixel circuit and an insulating layer 218 provided to cover the transistors between the substrate 310 and the light-emitting element 320.

[0326] The display device 490A employs an SBS (Side By Side) structure. The SBS structure is fabricated using a metal mask (or fine metal mask). This increases the degree of freedom in selecting materials and configurations for each light-emitting element. Therefore, since the materials and configurations can be optimized for each light-emitting element, it becomes easier to improve at least one of the following: increased light intensity and improved reliability.

[0327] The display device 490A is a top-emission type. In the top-emission type, transistors and other components can be placed overlapping with the light-emitting region of the light-emitting element, which allows for a higher aperture ratio of pixels compared to the bottom-emission type.

[0328] A light-emitting element 320R, a light-emitting element 320G, and a light-emitting element 320B are provided on the insulating layer 218.

[0329] The light-emitting element 320R has a pixel electrode 321R on the insulating layer 218, an EL layer 324R on the pixel electrode 321R, and a common electrode 327 on the EL layer 324R. The light-emitting element 320R shown in Figure 24A emits red (R) light. The EL layer 324R has a light-emitting layer that emits red light.

[0330] The light-emitting element 320G has a pixel electrode 321G on the insulating layer 218, an EL layer 324G on the pixel electrode 321G, and a common electrode 327 on the EL layer 324G. The light-emitting element 320G shown in Figure 24A emits green (G) light. The EL layer 324G has a light-emitting layer that emits green light.

[0331] The light-emitting element 320B has a pixel electrode 321B on the insulating layer 218, an EL layer 324B on the pixel electrode 321B, and a common electrode 327 on the EL layer 324B. The light-emitting element 320B shown in Figure 24A emits blue (B) light. The EL layer 324B has a light-emitting layer that emits blue light.

[0332] In Figure 24A, EL layers 324R, 324G, and 324B are shown to be of the same thickness, but this is not limited to this. The thicknesses of EL layers 324R, 324G, and 324B may be different. For example, it is preferable to set the thickness of EL layers 324R, 324G, and 324B so that the optical path length is such that the light emitted by each is intensified. This makes it possible to realize a microcavity structure and improve the color purity of the light emitted from each of the light-emitting elements 320R, 320G, and 320B.

[0333] When describing matters common to pixel electrode 321R, pixel electrode 321G, and pixel electrode 321B, they may simply be referred to as pixel electrode 321. Similarly, when describing matters common to EL layer 324R, EL layer 324G, and EL layer 324B, they may simply be referred to as EL layer 324.

[0334] The pixel electrode 321 is connected to a transistor (not shown) in the pixel circuit corresponding to the light-emitting element 320 at an opening provided in the insulating layer 218 or the like.

[0335] The ends of the pixel electrodes 321 are covered by an insulating layer 322. The insulating layer 322 functions as a partition. The insulating layer 322 can be provided in a single-layer or multi-layer structure using one or both of inorganic insulating materials and / or organic insulating materials. For example, the insulating layer 322 can be made of the same material that can be used for the insulating layer 218. The insulating layer 322 can insulate the pixel electrodes from the common electrodes. In addition, the insulating layer 322 can insulate adjacent light-emitting elements 320 from each other.

[0336] The common electrode 327 is a continuous film provided in common to multiple light-emitting elements 320. Although not shown in the figures, the common electrode 327, which is common to multiple light-emitting elements 320, is connected to a conductive layer formed from the same material and using the same process as the pixel electrode 321 in areas where no light-emitting elements 320 are provided.

[0337] Of the pixel electrode 321 and the common electrode 327, it is preferable to use a conductive film that transmits visible light for the electrode that extracts light to the outside of the display device 490A (in this case, the common electrode 327). It is also preferable to use a conductive film that reflects visible light for the electrode that does not extract light (in this case, the pixel electrode 321). In this case, a conductive film that transmits visible light may also be used for the electrode that does not extract light. In this case, a reflective layer may be arranged so as to face the EL layer 324 via the conductive film. As a result, the light emitted from the EL layer 324 may be reflected by the reflective layer and extracted to the outside of the display device 490A.

[0338] As the material for forming the pixel electrode 321 and the common electrode 327, metals, alloys, conductive compounds, or mixtures thereof can be used as appropriate.

[0339] It is preferable that the light-emitting element 320 has a microcavity structure. Therefore, for example, it is preferable that the common electrode 327 is an electrode that has transmittance and reflectivity to visible light (also called a semi-transmissive / semi-reflective electrode), and the pixel electrode 321 is preferable that it is an electrode that has reflectivity to visible light (also called a reflective electrode). By having a microcavity structure in the light-emitting element 320, the light emitted from the light-emitting layer can be made to resonate between the two electrodes, thereby strengthening the light emitted from the light-emitting element 320.

[0340] For example, the transmittance of the semi-transparent / semi-reflective electrode for visible light (light with a wavelength of 400 nm or more and less than 750 nm) shall be 40% or more. The reflectance of the semi-transparent / semi-reflective electrode for visible light shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The reflectance of the reflective electrode for visible light shall be 40% or more and less than 100%, preferably 70% or more and less than 100%.

[0341] The EL layers 324 are arranged in an island-like configuration. In Figure 24A, the ends of adjacent EL layers 324 overlap. However, this is not the only arrangement; adjacent EL layers 324 may not overlap and may be separated from each other. Furthermore, there may be both areas where adjacent EL layers 324 overlap and areas where adjacent EL layers 324 do not overlap and are separated from each other.

[0342] The EL layer 324 has at least an emissive layer. The emissive layer has one or more types of emissive materials. As the emissive material, a material that exhibits an emission color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red can be used as appropriate. In addition, a material that emits near-infrared light can also be used as the emissive material.

[0343] The luminescent material has an organic component. However, the luminescent material may also have an inorganic component. Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0344] The light-emitting layer may contain one or more types of organic compounds (such as a host material and an assist material) in addition to the light-emitting substance (guest material). One or more of the organic compounds may be substances with high hole transport properties (hole transport materials) and / or substances with high electron transport properties (electron transport materials). Alternatively, one or more of the organic compounds may be bipolar substances (substances with high electron and hole transport properties) or TADF materials.

[0345] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting element.

[0346] In addition to the light-emitting layer, the EL layer 324 may have one or more of the following: a layer containing a material with high hole injection properties (hole injection layer), a layer containing a hole transport material (hole transport layer), a layer containing a material with high electron blocking properties (electron blocking layer), a layer containing a material with high electron injection properties (electron injection layer), a layer containing an electron transport material (electron transport layer), and a layer containing a material with high hole blocking properties (hole blocking layer). Furthermore, the EL layer 324 may contain either or both a bipolar material and a TADF material.

[0347] The light-emitting element 320 may be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may also contain an inorganic compound. The layers constituting the light-emitting element 320 can be formed by methods such as vapor deposition (vacuum deposition, etc.), transfer, printing (inkjet, etc.), or coating (spin coating, etc.).

[0348] The light-emitting element 320 may be a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having multiple light-emitting units). Each light-emitting unit has at least one light-emitting layer. The tandem structure is a configuration in which multiple light-emitting units are connected in series via a charge generation layer. The charge generation layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between a pair of electrodes. By using a tandem structure, a light-emitting element capable of emitting light with high light intensity can be made. In addition, compared to a single structure, the tandem structure can reduce the current required to obtain the same light intensity, thus improving reliability. The tandem structure can also be called a stack structure.

[0349] In Figure 24A, when a tandem structure is used as the light-emitting element 320, it is preferable that the EL layer 324R has a structure having multiple light-emitting units that emit red light, the EL layer 324G has a structure having multiple light-emitting units that emit green light, and the EL layer 324B has a structure having multiple light-emitting units that emit blue light.

[0350] A protective layer 328 is provided on the light-emitting element 320. The protective layer 328 and the substrate 350 are bonded together via an adhesive layer 340. A light-shielding layer 352 is provided on the substrate 350.

[0351] For sealing the light-emitting element 320, for example, a solid sealing structure or a hollow sealing structure can be applied. In Figure 24A, the space between the substrate 350 and the substrate 310 is filled with an adhesive layer 340, indicating that a solid sealing structure is applied. Alternatively, a hollow sealing structure may be applied, in which the space is filled with an inert gas (such as nitrogen or argon). In this case, the adhesive layer 340 may be provided in a frame shape so as not to overlap with the light-emitting element 320. Furthermore, the space may be filled with a resin different from the adhesive layer 340 provided in a frame shape.

[0352] As the adhesive layer 340, various types of curing adhesives can be used, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. For these adhesives, materials with low moisture permeability, such as epoxy resins, are preferred.

[0353] By providing a protective layer 328 on the light-emitting element 320, the reliability of the light-emitting element can be improved. The protective layer 328 may be a single layer or a laminated structure of two or more layers. Furthermore, the conductivity of the protective layer 328 is not required. At least one of an insulating film, a semiconductor film, and a conductive film can be used as the protective layer 328. When the light emitted from the light-emitting element 320 is taken out to the outside of the display device 490A via the protective layer 328, it is preferable that the protective layer 328 has high transmittance to visible light. For example, inorganic materials with high transmittance to visible light, such as ITO, IGZO, or aluminum oxide, are preferred.

[0354] The light emitted by the light-emitting element 320 is emitted towards the substrate 350. Therefore, it is preferable to use a material with high transparency to visible light for the substrate 350.

[0355] It is preferable to provide a light-shielding layer 352 on the surface of the substrate 350 that faces the substrate 310. The light-shielding layer 352 can be provided between adjacent light-emitting elements 320, for example.

[0356] Although not shown in the figures, a colored layer such as a color filter may be provided on the surface of the substrate 350 facing the substrate 310, or on the protective layer 328. By providing a color filter on top of the light-emitting element 320, the color purity of the light extracted to the outside of the display device 490A can be increased.

[0357] A colored layer is a colored layer that selectively transmits light in a specific wavelength range and absorbs light in other wavelength ranges. For example, a red (R) color filter that transmits light in the red wavelength range, a green (G) color filter that transmits light in the green wavelength range, and a blue (B) color filter that transmits light in the blue wavelength range can be used. One or more of the following can be used for each colored layer: metal materials, resin materials, pigments, and dyes. The colored layers can be formed at desired locations by printing, inkjet printing, or etching using photolithography.

[0358] [Configuration Example 2] The display device 490B shown in Figure 24B includes a light-emitting element 320R, a light-emitting element 320G, a light-emitting element 320B, a colored layer 354R that transmits red light, a colored layer 354G that transmits green light, and a colored layer 354B that transmits blue light. The display device 490B mainly differs from the display device 490A in that each sub-pixel of each color uses a light-emitting element having a common EL layer 324W and a colored layer (color filter, etc.). Note that explanations of parts that are the same as those of the display device 490A described above may be omitted.

[0359] The light-emitting element 320R includes a pixel electrode 321R, an EL layer 324W on the pixel electrode 321R, and a common electrode 327 on the EL layer 324W. The light emitted by the light-emitting element 320R is extracted as red light to the outside of the display device 490B via the colored layer 354R.

[0360] The light-emitting element 320G includes a pixel electrode 321G, an EL layer 324W on the pixel electrode 321G, and a common electrode 327 on the EL layer 324W. The light emitted by the light-emitting element 320G is extracted as green light to the outside of the display device 490B via the colored layer 354G.

[0361] The light-emitting element 320B includes a pixel electrode 321B, an EL layer 324W on the pixel electrode 321B, and a common electrode 327 on the EL layer 324W. The light emitted by the light-emitting element 320B is extracted as blue light to the outside of the display device 490B via the colored layer 354B.

[0362] Each of the light-emitting elements 320R, 320G, and 320B has an EL layer 324W and a common electrode 327. The configuration in which a common EL layer 324W is provided for each sub-pixel of each color reduces the number of manufacturing steps compared to the configuration in which different EL layers (EL layer 324R, EL layer 324G, and EL layer 324B) are provided for each sub-pixel of each color.

[0363] For example, the light-emitting elements 320R, 320G, and 320B shown in Figure 24B emit white light. The white light emitted by the light-emitting elements 320R, 320G, and 320B passes through the colored layers 354R, 354G, and 354B, thereby obtaining light of a desired color.

[0364] A light-emitting element that emits white light preferably includes two or more light-emitting layers. When obtaining white light using two light-emitting layers, the light-emitting layers may be selected such that their emission colors are complementary. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary, a configuration can be obtained in which the entire light-emitting element emits white light. Alternatively, when obtaining white light emission using three or more light-emitting layers, the emission colors of the three or more light-emitting layers combine to produce a configuration in which the entire light-emitting element emits white light.

[0365] The EL layer 324W preferably has, for example, an emissive layer having a light-emitting material that emits blue light, and an emissive layer having a light-emitting material that emits visible light with a longer wavelength than blue. The EL layer 324W preferably has, for example, an emissive layer that emits yellow light and an emissive layer that emits blue light. Alternatively, the EL layer 324W preferably has, for example, an emissive layer that emits red light, an emissive layer that emits green light, and an emissive layer that emits blue light.

[0366] For light-emitting elements that emit white light, a tandem structure is preferable. Examples of such light-emitting elements include a two-stage tandem structure having a light-emitting unit that emits yellow (Y) light and a light-emitting unit that emits blue (B) light, a two-stage tandem structure having a light-emitting unit that emits red (R) light and green (G) light and a light-emitting unit that emits blue light, and so on. Furthermore, examples of such light-emitting elements include a three-stage tandem structure having a light-emitting unit that emits blue light, a light-emitting unit that emits yellow, yellow-green, or green light, and a light-emitting unit that emits blue light in that order, a three-stage tandem structure having a light-emitting unit that emits blue light, a light-emitting unit that emits yellow, yellow-green, or green light and red light, and a light-emitting unit that emits blue light in that order.

[0367] For example, the light-emitting elements 320R, 320G, and 320B shown in Figure 24B may emit blue light. In this case, the EL layer 324W has one or more light-emitting layers that emit blue light. In pixels that emit blue light, the blue light emitted by the light-emitting element 320B can be extracted. In pixels that emit red light and pixels that emit green light, a color conversion layer can be provided between the light-emitting element 320R or 320G and the substrate 350 to convert the blue light emitted by the light-emitting element 320R or 320G into longer wavelength light, thereby extracting red or green light. Furthermore, it is preferable to provide a coloring layer 354R between the color conversion layer and the substrate 350 on the light-emitting element 320R, and a coloring layer 354G between the color conversion layer and the substrate 350 on the light-emitting element 320G. Some of the light emitted by the light-emitting element 320 may be transmitted without being converted by the color conversion layer. Therefore, by extracting the light that has passed through the color conversion layer via the colored layer, the colored layer absorbs light of colors other than the desired color, thereby increasing the color purity of the light exhibited by the subpixel.

[0368] [Configuration Example 3] The display device 490C shown in Figure 25A is an example of a display device having a light-emitting element to which an MML (metal maskless) structure is applied. The display device 490C has a light-emitting element manufactured without using a metal mask (or fine metal mask). Note that the configuration between the substrate 310 and the insulating layer 218, and the configuration between the protective layer 328 and the substrate 350 are the same as those of the display device 490A, so their explanation is omitted.

[0369] In this case, in a light-emitting element to which an MML structure is applied, the layer containing the light-emitting layer is not formed using a metal mask, but rather formed by depositing the layer containing the light-emitting layer onto one surface and then processing it using photolithography. For example, if the display device 490C is composed of three types of light-emitting elements, such as a blue light-emitting element, a green light-emitting element, and a red light-emitting element, three types of island-shaped light-emitting layers can be formed by repeating the deposition of the light-emitting layer and processing by photolithography three times. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the light-emitting layer can be made separately for each color, it is possible to realize a display device that is extremely vivid, has high contrast, and has high display quality. In addition, by providing a sacrificial layer on the light-emitting layer, the damage that the light-emitting layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting element can be improved.

[0370] Furthermore, MML-structured light-emitting elements can be manufactured without using a metal mask. Therefore, it is possible to realize display devices that exceed the resolution limits imposed by the alignment accuracy of metal masks. Additionally, the equipment required for manufacturing metal masks and the metal mask cleaning process can be eliminated. Moreover, mass production of display devices can be achieved.

[0371] Furthermore, by applying an MML structure, it is possible to realize a display device that integrates fine light-emitting elements. For example, without artificially increasing the resolution by applying a special pixel arrangement such as a pentile arrangement, it is possible to apply a so-called stripe arrangement in which R, G, and B are each arranged in one direction, and realize a display device with a resolution of 500 ppi or more, 1000 ppi or more, 2000 ppi or more, 3000 ppi or more, or 5000 ppi or more.

[0372] In Figure 25A, light-emitting elements 320R, 320G, and 320B are provided on the insulating layer 218.

[0373] The light-emitting element 320R includes a conductive layer 331R on an insulating layer 218, a conductive layer 333R on the conductive layer 331R, an EL layer 334R on the conductive layer 333R, a common layer 337 on the EL layer 334R, and a common electrode 327 on the common layer 337. The light-emitting element 320R shown in Figure 25A emits red (R) light. The EL layer 334R has a light-emitting layer that emits red light. In the light-emitting element 320R, the EL layer 334R and the common layer 337 can also be collectively called the EL layer. In addition, one or both of the conductive layers 331R and 333R can be called pixel electrodes.

[0374] The light-emitting element 320G includes a conductive layer 331G on an insulating layer 218, a conductive layer 333G on the conductive layer 331G, an EL layer 334G on the conductive layer 333G, a common layer 337 on the EL layer 334G, and a common electrode 327 on the common layer 337. The light-emitting element 320G shown in Figure 25A emits green (G) light. The EL layer 334G has a light-emitting layer that emits green light. In the light-emitting element 320G, the EL layer 334G and the common layer 337 can also be collectively called the EL layer. In addition, one or both of the conductive layers 331G and 333G can be called pixel electrodes.

[0375] The light-emitting element 320B includes a conductive layer 331B on the insulating layer 218, a conductive layer 333B on the conductive layer 331B, an EL layer 334B on the conductive layer 333B, a common layer 337 on the EL layer 334B, and a common electrode 327 on the common layer 337. The light-emitting element 320B shown in Figure 25A emits blue (B) light. The EL layer 334B has a light-emitting layer that emits blue light. In the light-emitting element 320B, the EL layer 334B and the common layer 337 can also be collectively called the EL layer. In addition, one or both of the conductive layers 331B and 333B can be called pixel electrodes.

[0376] In Figure 25A, EL layers 334R, 334G, and 334B are all shown to be the same thickness, but this is not the only option. The thicknesses of EL layers 334R, 334G, and 334B may be different.

[0377] When describing matters common to the light-emitting element 320R, light-emitting element 320G, and light-emitting element 320B, it may simply be referred to as light-emitting element 320. When describing matters common to the conductive layer 331R, conductive layer 331G, and conductive layer 331B, it may simply be referred to as conductive layer 331. Also, when describing matters common to the conductive layer 333R, conductive layer 333G, and conductive layer 333B, it may simply be referred to as conductive layer 333. Furthermore, when describing matters common to the EL layer 334R, EL layer 334G, and EL layer 334B, it may simply be referred to as EL layer 334.

[0378] The conductive layer 331 is connected to a transistor (not shown) in the pixel circuit corresponding to the light-emitting element 320 at an opening provided in the insulating layer 218 or the like.

[0379] The conductive layer 331 is formed to cover the openings provided in the insulating layer 218 and the like. A planarizing layer 332 is embedded in each recess of the conductive layer 331.

[0380] The planarization layer 332 has the function of flattening the recesses of the conductive layer 331. A conductive layer 333 is provided on the conductive layer 331 and the planarization layer 332, in contact with the conductive layer 331. Therefore, the region overlapping with the recesses of the conductive layer 331 can also be used as a light-emitting region, thereby increasing the aperture ratio of the pixels.

[0381] The planarization layer 332 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the planarization layer 332. In particular, it is preferable that the planarization layer 332 be formed using an insulating material, and it is especially preferable that it be formed using an organic insulating material. For example, the organic insulating material that can be used for the insulating layer 322 described above can be applied to the planarization layer 332.

[0382] Although Figure 25A shows an example where the upper surface of the flattening layer 332 has a flat portion, the shape of the flattening layer 332 is not particularly limited. The upper surface of the flattening layer 332 can have at least one of a convex curved surface, a concave curved surface, and a flat surface. Furthermore, the height of the upper surface of the flattening layer 332 and the height of the upper surface of the conductive layer 331 may be the same or different. For example, the height of the upper surface of the flattening layer 332 may be lower or higher than the height of the upper surface of the conductive layer 331.

[0383] The end of the conductive layer 333 may be aligned with the end of the conductive layer 331, or it may cover the side surface of the end of the conductive layer 331. Preferably, the ends of the conductive layer 331 and the conductive layer 333 have a tapered shape. This improves the coverage of the EL layer 334 provided along the side surfaces of the conductive layer 331 and the conductive layer 333.

[0384] It is preferable to use conductive layers that function as reflective electrodes in conductive layers 331 and 333.

[0385] The upper and side surfaces of the conductive layer 333 are covered by the EL layer 334. Therefore, the entire region where the conductive layer 333 is provided can be used as the light-emitting region of the light-emitting element 320, thereby increasing the aperture ratio of the pixels.

[0386] The EL layer 334 is provided in an island-like manner for each light-emitting element 320. Therefore, adjacent EL layers 334 are separated from each other. This prevents current from flowing between adjacent light-emitting elements 320. As a result, unintended light emission caused by crosstalk can be prevented, and a display device with extremely high contrast can be realized.

[0387] Between adjacent light-emitting elements 320, a portion of the upper surface and sides of the EL layer 334 are covered by insulating layers 335 and 336. A common layer 337 is provided on the EL layer 334, insulating layer 335, and insulating layer 336, and a common electrode 327 is provided on the common layer 337. The common layer 337 and the common electrode 327 are each continuous films provided in common to multiple light-emitting elements 320.

[0388] In Figure 25A, there is no insulating layer (corresponding to the insulating layer 322 shown in Figure 24A, etc.) that functions as a partition between the conductive layer 333 and the EL layer 334. Therefore, the spacing between adjacent light-emitting elements 320 can be made extremely narrow. Consequently, a high-definition and high-resolution display device can be made. In addition, a mask (e.g., a photomask) for forming the insulating layer is not required, which reduces the manufacturing cost of the display device.

[0389] The EL layer 334 may have one or more of the following in addition to the light-emitting layer: an electron transport layer, an electron blocking layer, a hole transport layer, and a hole blocking layer. The common layer 337 may have an electron injection layer or a hole injection layer. The common layer 337 may also have an electron transport layer and an electron injection layer, or a hole transport layer and a hole injection layer.

[0390] A portion of the upper surface and side surface of the EL layer 334 are covered by at least one of the insulating layer 335 and the insulating layer 336. Therefore, the common layer 337 and the common electrode 327 are in contact with the conductive layer 331 and the conductive layer 333, as well as the side surface of the EL layer 334, which can suppress short circuits between the pair of electrodes of the light-emitting element 320. This can improve the reliability of the light-emitting element.

[0391] Furthermore, by configuring the insulating layer 335 to be in contact with the side surface of the EL layer 334, peeling of the EL layer 334 can be prevented. This improves the reliability of the light-emitting element.

[0392] Furthermore, the insulating layer 336 is provided on the insulating layer 335 so as to fill the recesses of the insulating layer 335. Preferably, the insulating layer 336 covers at least a portion of the side surface of the insulating layer 335. By providing the insulating layer 335 and the insulating layer 336 in this way, the region between adjacent island-shaped EL layers 334 can be filled. As a result, the step difference on the formed surface of the common layer 337 and the common electrode 327 can be reduced and made flat. This improves the coverage of the common layer 337 and the common electrode 327. Therefore, connection failures due to step breaks in the common layer 337 and the common electrode 327, or increases in electrical resistance due to localized thinning of the common electrode 327, can be suppressed.

[0393] The upper surface of the insulating layer 336 preferably has a shape that is more flat. The upper surface of the insulating layer 336 may have at least one of a flat surface, a convex curved surface, and a concave curved surface. For example, the upper surface of the insulating layer 336 preferably has a convex curved shape with a large radius of curvature.

[0394] An inorganic insulating film can be used for the insulating layer 335. Examples of materials that can be used for the inorganic insulating film include oxides, nitrides, oxidized nitrides, and nitride oxides. It is preferable that the insulating layer 335 has the function of protecting the EL layer 334 in the formation of the insulating layer 336. For example, by applying an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by the ALD method as the insulating layer 335, an insulating layer 335 can be formed that has few pinholes and excellent function in protecting the EL layer 334.

[0395] Furthermore, it is preferable that the insulating layer 335 functions as a barrier insulating layer against at least one of water and oxygen. Therefore, it is preferable that the insulating layer 335 has the function of suppressing the diffusion of at least one of water and oxygen. It is also preferable that the insulating layer 335 has the function of capturing or fixing (also called gettering) at least one of water and oxygen. By having the insulating layer 335 function as a barrier insulating layer, it is possible to suppress the intrusion of impurities (typically at least one of water and oxygen) that can diffuse from the outside into each light-emitting element 320. With this configuration, it is possible to provide a highly reliable light-emitting element and, furthermore, a highly reliable display device.

[0396] An insulating layer having an organic material can be used as the insulating layer 336. Preferably, a photosensitive organic resin is used as the organic material; for example, a photosensitive resin composition containing an acrylic resin is preferred. In this specification, the term "acrylic resin" does not refer only to polymethacrylate esters or methacrylic resins, but may refer to acrylic polymers in a broad sense.

[0397] Furthermore, the insulating layer 336 may be made of a material that absorbs visible light. By absorbing the light emitted from the light-emitting element 320, the insulating layer 336 can suppress light leakage (stray light) to adjacent light-emitting elements 320 through the insulating layer 336. This improves the display quality of the display device. In addition, since the display quality can be improved without using a polarizing plate in the display device, at least one of the following can be achieved: the display device can be made lighter and thinner.

[0398] Examples of materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used as color filters (color filter materials). In particular, it is preferable to use a resin material which is made by laminating or mixing two or more color filter materials, as this can enhance the visible light shielding effect. In particular, by mixing three or more color filter materials, it is possible to create a black or near-black resin layer.

[0399] [Configuration Example 4] The display device 490D shown in Figure 25B includes a light-emitting element 320R, a light-emitting element 320G, a light-emitting element 320B, a colored layer 354R that transmits red light, a colored layer 354G that transmits green light, and a colored layer 354B that transmits blue light. The display device 490D differs from the display device 490C in that each sub-pixel of each color uses a light-emitting element having an EL layer 334W and a colored layer (such as a color filter). Note that explanations of parts that are the same as those of the display device 490C described above may be omitted.

[0400] The light emitted by the light-emitting element 320R is extracted as red light to the outside of the display device 490D via the colored layer 354R. Similarly, the light emitted by the light-emitting element 320G is extracted as green light to the outside of the display device 490D via the colored layer 354G. The light emitted by the light-emitting element 320B is extracted as blue light to the outside of the display device 490D via the colored layer 354B.

[0401] Each light-emitting element 320R, 320G, and 320B has an EL layer 334W. The EL layers 334W of each color are formed using the same material and the same process. Furthermore, the EL layers 334W of each color are spaced apart from each other. By providing the EL layers 334W in an island-like manner for each light-emitting element 320, it is possible to suppress the flow of current between adjacent light-emitting elements 320. This prevents unintended light emission caused by crosstalk, and enables the realization of a display device with extremely high contrast.

[0402] For example, the light-emitting elements 320R, 320G, and 320B shown in Figure 25B emit white light. The white light emitted by the light-emitting elements 320R, 320G, and 320B passes through the colored layers 354R, 354G, and 354B, respectively, to obtain light of a desired color.

[0403] For example, the light-emitting elements 320R, 320G, and 320B shown in Figure 25B may emit blue light. In this case, the EL layer 334W has one or more light-emitting layers that emit blue light. In pixels that emit blue light, the blue light emitted by the light-emitting element 320B can be extracted. In pixels that emit red light and pixels that emit green light, a color conversion layer can be provided between the light-emitting element 320R or 320G and the substrate 350 to convert the blue light emitted by the light-emitting element 320R or 320G into longer wavelength light, thereby extracting red or green light. Furthermore, it is preferable to provide a coloring layer 354R between the color conversion layer and the substrate 350 on the light-emitting element 320R, and a coloring layer 354G between the color conversion layer and the substrate 350 on the light-emitting element 320G. Some of the light emitted by the light-emitting element 320 may be transmitted without being converted by the color conversion layer. Therefore, by extracting the light that has passed through the color conversion layer via the colored layer, the colored layer absorbs light of colors other than the desired color, thereby increasing the color purity of the light exhibited by the subpixel.

[0404] Furthermore, the contents of this embodiment can be combined as appropriate. Also, the contents of this embodiment can be combined as appropriate with the contents of other embodiments, etc.

[0405] (Embodiment 5) This embodiment describes an indium oxide film that can be used in the semiconductor layer of a transistor according to one aspect of the present invention.

[0406] In this specification, indium oxide having at least a crystalline portion or crystalline region in the film is referred to as crystalline indium oxide (crystal IO) or crystalline indium oxide (crystalline IO). Examples of crystal IO or crystalline IO include single-crystal indium oxide, polycrystalline indium oxide, and microcrystalline indium oxide.

[0407] Indium oxide is a semiconductor material with completely different physical properties from oxide semiconductors such as In-Ga-Zn oxide (hereinafter also referred to as IGZO) and zinc oxide.

[0408] The carrier concentration dependence of the hole (Hall) mobility of indium oxide, silicon, and IGZO is described. Figure 26A shows silicon (Si) and indium oxide (InO Ｘ Figure 26B is a schematic diagram of the carrier concentration dependence of hole mobility with respect to IGZO.

[0409] First, as indicated by the arrows in Figure 26B, IGZO tends to exhibit higher hole mobility as the carrier concentration increases. On the other hand, as indicated by the arrows in Figure 26A, indium oxide tends to exhibit higher hole mobility as the carrier concentration decreases (see Non-Patent Literature 1). This trend is similar to that of silicon, where the lower the concentration of dopants (impurities) in the material, the less impurity scattering occurs and the higher the hole mobility. In other words, the higher the purity and intrinsic nature of indium oxide, the higher its hole mobility. From these results, it can be said that indium oxide, unlike IGZO, is a material with physical properties similar to silicon. Note that the properties of indium oxide shown in Figure 26A are assumed to be those of a single crystal. Therefore, when indium oxide is not a single crystal (for example, polycrystalline), the properties may differ from those shown in Figure 26A.

[0410] In Figure 26A, the low carrier concentration range R1 exhibits extremely high hole mobility, making it a suitable carrier concentration range for, for example, the channel formation region of a transistor. For example, in the case of indium oxide, the range R1 has a carrier concentration of 1 × 10⁻⁶. １５ cm −３ This range includes, for example, 1 × 10 １４ cm −３ The above is 1 x 10 １８ cm −３ The range is as follows: By sufficiently reducing the carrier concentration, the hole mobility value can be increased to 270 cm⁻¹. ２ It can be expected to be raised to the level of / (V・s).

[0411] Furthermore, in indium oxide, the region where the carrier concentration is in the range R1 may contain elements that lower the carrier concentration. Examples of elements that lower the carrier concentration include magnesium, calcium, zinc, cadmium, and copper. By substituting these elements for indium, the carrier concentration can be lowered. Other elements that lower the carrier concentration include nitrogen, phosphorus, arsenic, and antimony. For example, by substituting nitrogen, phosphorus, arsenic, or antimony for oxygen, the carrier concentration can be lowered.

[0412] On the other hand, the range R2 with high carrier concentration has low electrical resistance and can be said to be a suitable range of carrier concentration for applications such as the source and drain regions of a transistor, or resistors, or transparent conductive films. Range R2 is when the carrier concentration value is 1 × 10⁻⁶ ２０ cm −３ This range includes, for example, 1 × 10 １９ cm −３ The above is 1 x 10 ２２ cm −３ The range is as follows: By making the carrier concentration sufficiently high, the resistivity can be increased to 1 × 10⁻⁶. −４ It is expected that the level can be reduced to below Ω·cm.

[0413] Furthermore, in the indium oxide, the region where the carrier concentration is in the range R2 may contain elements that increase the carrier concentration. For example, it is preferable to include elements common to the source and drain electrodes of the transistor. Examples of elements that increase the carrier concentration include titanium, zirconium, hafnium, tantalum, tungsten, molybdenum, tin, silicon, and boron. In particular, it is more preferable to use elements in which the oxide is conductive or semiconducting.

[0414] In this way, indium oxide uses regions with low carrier concentrations for the transistor's channel formation region and regions with high carrier concentrations for the transistor's source and drain regions. In other words, indium oxide can be said to be an oxide in which valence electron control is possible. In IGZO, however, strain can form in the source and drain regions due to stress on the electrodes in contact with the IGZO, sometimes resulting in the formation of an n-type region. On the other hand, unlike IGZO, indium oxide allows for valence electron control, so it does not require the formation of strain in the film as in IGZO. Less strain in the film is expected to improve reliability. For example, by creating regions with carrier concentrations in the range R1 and range R2 shown in Figure 26A within the indium oxide film, a so-called n-i-n junction (a junction between an n-type region, an i-type region, and an n-type region) can be created. Valence electron control in silicon transistors is generally known. On the other hand, valence electron control in indium oxide transistors is a novel technological concept that would not normally be conceived.

[0415] By applying the above technical concept, the indium oxide transistor described herein has two or more, preferably three or more, more preferably four or more, and most preferably five of the following features (1) to (5): (1) High on-current (in other words, high mobility). (2) Low off-current. (3) Normally off is possible. (4) High reliability. (5) High cutoff frequency (fT). For example, the indium oxide transistor described herein has high mobility, low off-current, and is normally off. This transistor is different from a transistor that is high mobility and normally on.

[0416] Next, we will describe indium oxide films applied to transistors. Indium oxide films are preferably crystalline (i.e., they have crystal grains). Examples of films with crystal grains include single-crystal films, polycrystalline films, or amorphous films containing crystal grains (also called microcrystalline films). In particular, polycrystalline films are preferred for indium oxide films, and single-crystal films are more preferred. Single-crystal films do not have crystal grain boundaries. Impurities that inhibit carrier flow (typically insulating impurities, insulating oxides, etc.) tend to segregate at crystal grain boundaries. By using single-crystal films, carrier scattering at crystal grain boundaries can be suppressed, enabling the realization of transistors exhibiting high field-effect mobility. Furthermore, it has the excellent effect of suppressing variations in transistor characteristics caused by these crystal grain boundaries.

[0417] Furthermore, polycrystalline films are preferable because they can reduce carrier scattering and exhibit high field-effect mobility compared to microcrystalline or amorphous films. When using polycrystalline films, it is preferable to use films with the largest possible grain size and few grain boundaries. In a transistor to which a polycrystalline indium oxide film is applied, if there are no grain boundaries in the channel formation region, or if no grain boundaries are observed, the channel formation region is located within the single-crystal region contained in the polycrystalline film, and therefore it can be considered a transistor to which single-crystal indium oxide is applied.

[0418] The crystallinity of indium oxide can be analyzed, for example, by XRD, TEM, or ED. Alternatively, a combination of these methods may be used for analysis.

[0419] Furthermore, in this specification, a semiconductor layer in which no grain boundaries are observed in the channel-forming region, a semiconductor layer in which the channel-forming region is contained within a single crystal grain, or a semiconductor layer in which the direction of the crystal axes is the same in at least two regions within the channel-forming region can be called a single crystal film. In addition, a semiconductor layer in which, within a single crystal grain in the channel-forming region, the direction of other crystal axes changes continuously with respect to a certain crystal axis or crystal orientation as the axis of rotation can be called a single crystal film.

[0420] Unless otherwise specified, the channel formation region refers to a region in the semiconductor layer that overlaps (or faces) the gate electrode through the gate insulating film and is located between the region in contact with the source electrode and the region in contact with the drain electrode. The current path in the channel formation region is the shortest distance between the source electrode and the drain electrode. Therefore, crystal grains, grain boundaries, crystal axes, crystal orientations, etc. in the channel formation region can be confirmed by cross-sectional observation including the semiconductor layer, the source electrode, and the drain electrode.

[0421] The indium oxide film in the channel formation region preferably has a lower impurity concentration. Impurities in the indium oxide film in the channel formation region can be a scattering source of carriers and thus can be a factor in reducing the field-effect mobility. Also, these impurities can be a factor in inhibiting the crystal growth of the indium oxide film. Examples of impurities for the indium oxide film include boron, silicon, etc. The indium oxide film preferably has an impurity concentration of 0.1% or less, and more preferably 0.01% (100 ppm) or less, respectively. Note that carbon, hydrogen, etc. are elements that may be contained in the film-forming gas or precursor during film formation and may remain in the indium oxide film more than the above impurities.

[0422] Note that the indium oxide film in the channel formation region may contain an element that can become a trivalent cation the same as indium within the range where its crystal retains a cubic crystal structure (bixbyite type). For example, Group 13 elements of the periodic table such as gallium and aluminum, and Group 3 elements of the periodic table, etc. can be mentioned. Since these elements mainly exist as trivalent cations in the oxide, the carrier concentration of indium oxide can be kept low.

[0423] By using such an indium oxide film in a transistor, the field-effect mobility of the transistor can be 50 cm ２ / (V·s) or more, preferably 100 cm ２ / (V·s) or more, more preferably 150 cm ２ / (V·s) or more, still more preferably 200 cm ２ / (V·s) or more, still more preferably 250 cm ２ / (V·s) or higher can be achieved.

[0424] One of the characteristics of the indium oxide film is that it has higher oxygen permeability (diffusivity) compared to the IGZO film. As shown in Fig. 26C, the oxygen (O) diffusing into the indium oxide film (denoted as InO Ｘ ) permeates through the indium oxide film and is released as oxygen molecules (O ２ ). Also, by reacting with hydrogen contained in the film, it may be released as water molecules (H ２ O). When there are oxygen vacancies (V Ｏ ) in the film, the diffusing oxygen atoms fill the oxygen vacancies. Since oxygen diffuses easily in the indium oxide film, it can be said that it is easier to fill oxygen vacancies compared to the IGZO film.

[0425] Thus, since the indium oxide film is likely to reduce oxygen vacancies in the film compared to the IGZO film, by applying such an indium oxide film to a transistor, a transistor showing extremely high reliability can be realized.

[0426] Also, as shown in Fig. 26C, the indium oxide film diffuses hydrogen. The hydrogen diffusing from the outside into the indium oxide film permeates through the indium oxide film and is released as hydrogen molecules (H ２ ). Or, by reacting with oxygen contained in the film, it is released as water molecules.

[0427] A transistor using an indium oxide film is an accumulation-type transistor with electrons as majority carriers. Assuming that the carrier relaxation time is a constant value, the smaller the effective mass of electrons (carriers), the higher the electron mobility. That is, by using indium oxide with a small effective mass of electrons in a transistor, the on-current or the field-effect mobility of the transistor can be increased.

[0428] In Table 1, single-crystal indium oxide (here, In ２ O ３The effective masses of indium oxide and single-crystal silicon (Si) are shown below. As shown in Table 1, indium oxide is characterized by a small effective electron mass and a large effective hole mass. Furthermore, the effective electron mass of indium oxide is almost independent of the crystal orientation. Therefore, by using crystalline indium oxide in transistors, transistors with high field-effect mobility and high frequency characteristics (also called f-characteristics) can be realized. In addition, because the effective hole mass is large, transistors with extremely low off-currents can be realized. For example, by applying an indium oxide film to a transistor, the off-current per 1 μm of channel width is 1 fA (1 × 10⁻¹⁶) in an environment of 125°C. −１５ A) Less than or equal to, or 1aA (1 × 10 −１８ A) Less than or equal to 1aA (1 × 10) in a room temperature (25°C) environment. −１８ A) Less than or equal to, or 1zA (1 × 10⁻¹⁰ −２１ A) The following is possible. Also, as shown in Table 1, indium oxide has a smaller effective electron mass and a larger effective hole mass than silicon, so it may be possible to realize a transistor with higher field-effect mobility and lower off-current than a Si transistor.

[0429]

[0430] It is preferable to provide a seed layer so as to be in contact with at least a portion of the crystalline indium oxide film. It is preferable to use a material containing crystals with a small difference in lattice constant (also called lattice mismatch) with the indium oxide for the seed layer. This improves the crystallinity of the indium oxide film. A substrate (e.g., a single-crystal substrate) may be used as one of the layers in contact with at least a portion of the crystalline indium oxide film.

[0431] One method for evaluating the degree of lattice mismatch is to use the following lattice mismatch value. The lattice mismatch Δa [%] of the crystals in the formed film (in this case, the indium oxide film) relative to the crystals in the seed layer is given by Δa = ((L １ -L ２ ) / L ２ It is calculated as ) × 100. Here L１ L is the length of the unit cell vector of the crystals in the formed film, or the lattice constant. ２ This is the length of the unit cell vector of the crystal in the seed layer, or the lattice constant.

[0432] The lattice mismatch Δa between the seed layer and the indium oxide film is preferably small in absolute value, and most preferably zero. For example, Δa can be -5% or more and 5% or less, preferably -4% or more and 4% or less, more preferably -3% or more and 3% or less, and even more preferably -2% or more and 2% or less.

[0433] Here, the indium oxide crystal has a cubic structure (bixbite type). For example, yttria-stabilized zirconia (YSZ) crystals can have a cubic structure (fluorite type). The lattice mismatch of the indium oxide crystal with respect to the cubic YSZ crystal is in the range of -2% to 2%, and a single crystal film of indium oxide can be epitaxially grown on a YSZ substrate.

[0434] Furthermore, the crystal structure of the seed layer and the crystal structure of the indium oxide film do not necessarily have to be the same in terms of crystal system or crystal orientation. For example, a film with a hexagonal or trigonal crystal structure can be used beneath an indium oxide film with a cubic crystal structure. For example, by setting the crystal orientation of the surface of the seed layer to

[001] and the crystal orientation of the underside of the indium oxide film to

[111] , the requirements related to crystal orientation necessary for epitaxial growth can be met. Examples of hexagonal or trigonal crystals include wurtzite-type structures and YbFe. ２ O ４ Type structure, Yb ２ Fe ３ O ７ These include type structures and their modified type structures. YbFe ２ O ４ Type structure or Yb ２ Fe ３ O ７ An example of a crystal having a type structure is IGZO.

[0435] Furthermore, the contents of this embodiment can be combined as appropriate. Also, the contents of this embodiment can be combined as appropriate with the contents of other embodiments, etc.

[0436] (Embodiment 6) This embodiment describes an electronic device according to one aspect of the present invention.

[0437] The electronic device shown in this embodiment has a display unit that uses a display device according to one aspect of the present invention, or a semiconductor device according to one aspect of the present invention. The display device according to one aspect of the present invention facilitates either or both high resolution and high definition. Therefore, it can be used in the display units of various electronic devices.

[0438] Furthermore, a semiconductor device according to one aspect of the present invention can be applied to devices other than the display unit of an electronic device. For example, using a semiconductor device according to one aspect of the present invention in the control unit of an electronic device is preferable because it enables lower power consumption.

[0439] Examples of electronic devices include those with relatively large screens, such as television sets, desktop or notebook computers, computer monitors, digital signage, and large game machines like pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0440] In particular, a display device according to one aspect of the present invention can be used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wearable devices that can be worn on the wrist (watch-type information terminals, bracelet-type information terminals, etc.), wearable devices that can be worn on the head (VR devices such as head-mounted displays, AR devices such as glasses, SR (Substitutional Reality) devices, MR (Mixed Reality) devices, devices that implement spatial computing such as spatial computers, etc.).

[0441] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device having high resolution and / or high detail, it is possible to enhance at least one of the following: a sense of presence and a sense of depth. Furthermore, there are no particular limitations on the aspect ratio of the display device according to one embodiment of the present invention, and various aspect ratios such as 1:1 (square), 4:3, 16:9, or 16:10 can be used.

[0442] The electronic device shown in this embodiment may have sensors (including functions for detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0443] The electronic device shown in this embodiment may include a processing unit, a memory device, an input device, an output device, a control device, and the like. A semiconductor device according to one aspect of the present invention may be applied to the processing unit, memory device, input device, output device, control device, and the like of the electronic device.

[0444] The electronic device shown in this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of the electronic device are not limited to these and can have a variety of functions. The electronic device may have multiple display units. The electronic device may also have a camera and may have a function to take still images or videos with the camera, a function to save the captured images to a recording medium provided outside or inside the camera, a function to display the captured images on a display unit, etc.

[0445] Figure 27A shows an example of an electronic device that can be used as a portable information terminal, such as a smartphone.

[0446] The electronic device 8100 includes a housing 8101, a display unit 8102, a power button 8103, operation buttons 8104, a speaker 8105, a microphone 8106, a camera 8107, and a light source 8108. The display unit 8102 may also function as a touch panel.

[0447] A display device according to one embodiment of the present invention can be applied to the display unit 8102.

[0448] Figure 27B shows an example of an electronic device that can be used as a smartwatch or other wristwatch-type information terminal.

[0449] The electronic device 8200 includes a housing 8201, a display unit 8202, a power key 8203, operation keys 8204, a speaker 8205, a microphone 8206, a sensor 8207, and connection terminals 8208. The display unit 8202 is curved.

[0450] A display device according to one embodiment of the present invention can be applied to the display unit 8202.

[0451] Incidentally, the electronic device 8200 can also make a hands-free call by communicating with a wirelessly communicable headset. Further, the electronic device 8200 can also perform data transmission and charging with other electronic devices via the connection terminal 8208. The charging operation may be performed by wireless power supply.

[0452] FIG. 27C shows an example of an electronic device that can be used as a television device or the like.

[0453] The electronic device 8300 includes a housing 8301, a display unit 8302, and the like. The housing 8301 is supported by a stand 8303.

[0454] The display device according to one aspect of the present invention can be applied to the display unit 8302.

[0455] Incidentally, the operation of the electronic device 8300 can be performed by an operation switch provided in the housing 8301 or a separate remote control unit. Further, the display unit 8302 may have a function as a touch panel, and the electronic device 8300 may be operated by touching the display unit 8302 with a finger or the like.

[0456] Further, the electronic device 8300 may include a receiver and a modem. The receiver can receive general television broadcasts. Further, by connecting to a communication network by wire or wirelessly via the modem, one-way (only from the sender to the receiver) or two-way (between the sender and the receiver, or between the receivers) information communication can be performed.

[0457] FIG. 27D shows an example of an electronic device that can be used as a notebook computer or the like.

[0458] The electronic device 8400 includes a housing 8401, a display unit 8402, a keyboard 8403, a pointing device 8404, an external connection port 8405, and the like.

[0459] The display device according to one aspect of the present invention can be applied to the display unit 8402.

[0460] FIG. 27E shows an example of an electronic device that can be used as digital signage or the like.

[0461] The electronic device 8500 includes a display unit 8501, etc. The electronic device 8500 is mounted along the curved surface of a cylindrical column 8509.

[0462] A display device according to one embodiment of the present invention can be applied to the display unit 8501.

[0463] Furthermore, the display unit 8501 of the electronic device 8500 may also function as a touch panel. This allows the electronic device 8500 to be operated intuitively. For example, when the electronic device 8500 is used to provide information such as route information or traffic information, intuitive operation can enhance usability.

[0464] Furthermore, the electronic device 8500 may be able to communicate wirelessly with an information terminal 8508, such as a smartphone, owned by the user. For example, information from advertisements displayed on the display unit 8501 can be displayed on the screen of the information terminal 8508. Also, the display on the display unit 8501 can be switched by operating the information terminal 8508. In addition, the electronic device 8500 can be made to run a game using the screen of the information terminal 8508 as a control means (controller). This allows multiple users to participate in and enjoy the game simultaneously.

[0465] Figure 27F shows an example of electronic equipment installed around the windshield inside a car.

[0466] The electronic device 8600 includes a display unit 8601, a display unit 8602, and a display unit 8603 mounted on the dashboard, a display unit 8604 mounted on the pillar, and a main body 8605.

[0467] A display device according to one embodiment of the present invention can be applied to each of the display units 8601, 8602, 8603, and 8604.

[0468] Furthermore, each of the display units 8601 to 8604 can display various information transmitted from the main unit 8605 via wired or wireless communication. For example, each of the display units 8601 to 8603 can display various information such as navigation information, speedometer, tachometer, mileage, fuel gauge, gear status, and air conditioning settings. Display unit 8604 can display images from an imaging device installed on the outside of the vehicle to enhance safety by supplementing the view obstructed by the pillars (blind spots).

[0469] Figure 27G shows an example of a glasses-type electronic device that can be used for AR (augmented reality) equipment and the like.

[0470] The electronic device 8700 includes a main body 8701, a display unit 8702, a mounting unit 8703, and a lens 8704. A battery 8705 is provided in the mounting unit 8703. The battery 8705 is connected to the main body via a cable 8706.

[0471] A display device according to one embodiment of the present invention can be applied to the display unit 8702.

[0472] Furthermore, in the electronic device 8700, for example, if the main unit 8701 has a wireless receiver, video information such as received image data can be displayed on the display unit 8702. Also, for example, if the main unit 8701 has a camera, it can capture the movement of the user's eyeballs or eyelids, and by calculating the user's gaze based on that information, the user's gaze can be used as an input means.

[0473] Furthermore, in the electronic device 8700, the attachment portion 8703 may be provided with multiple electrodes at a position that touches the user. As a result, the electronic device 8700 may have a function to recognize the user's gaze by detecting the current flowing through the electrodes in accordance with the user's eye movements. It may also have a function to monitor the user's pulse by detecting the current flowing through the electrodes.

[0474] Furthermore, the electronic device 8700 may have various sensors to display the user's biometric information on the display unit 8702. It may also have a function to detect the user's head movements and change the image displayed on the display unit 8702 in accordance with those movements.

[0475] Figure 27H shows an example of a head-mounted display type electronic device that can be used for VR equipment and the like.

[0476] The electronic device 8800 includes a housing 8801, a display unit 8802, operation buttons 8803, and a fixing device 8804. A battery 8805 is provided in the fixing device 8804.

[0477] A display device according to one embodiment of the present invention can be applied to the display unit 8802.

[0478] Furthermore, since the electronic device 8800 has two display units 8802, the user can view one display unit with each eye. This allows for the display of high-resolution images even when performing 3D displays using parallax.

[0479] Furthermore, the contents of this embodiment can be combined as appropriate. Also, the contents of this embodiment can be combined as appropriate with the contents of other embodiments, etc.

[0480] (Notes regarding the description in this specification, etc.) The above embodiments and descriptions of each component in the embodiments are provided below.

[0481] In this specification, a semiconductor device refers to any device that can function by utilizing semiconductor properties. For example, semiconductor elements such as transistors, electronic circuits containing semiconductor elements, chips with electronic circuits formed on a substrate, electronic components with chips housed in a package, and electronic devices on which electronic components are mounted are examples of semiconductor devices. In addition, display devices, light-emitting devices, projection devices, illumination devices, optical devices, electro-optical devices, imaging devices, light-receiving devices, detection devices, power supply devices, energy storage devices, communication devices, arithmetic units, control devices, arithmetic processing units, memory devices, input devices, output devices, input / output devices, signal processing devices, information processing devices, computers, and electronic devices may have semiconductor devices and can be said to be semiconductor devices themselves.

[0482] In this specification, a "transistor" has three terminals called the "gate" (also called the gate terminal, gate region, or gate electrode), the "source" (also called the source terminal, source region, or source electrode), and the "drain" (also called the drain terminal, drain region, or drain electrode). A transistor also has a region where a channel is formed between the drain and the source (also called the channel formation region). A transistor can pass current between the source and the drain through the channel formation region. Furthermore, a transistor can generate electrical signals or potential interactions between the source and the drain through the channel formation region. The channel formation region is the region where current primarily flows. The gate is a control terminal that controls the amount of current flowing through the channel formation region. The two terminals that function as the source or drain are input / output terminals that input or output the current flowing through the channel formation region.

[0483] The two input / output terminals function as either a source or a drain, depending on the transistor's conductivity type (n-channel or p-channel) and the potential applied to its three terminals. Furthermore, the source and drain functions may be reversed when the direction of current changes during circuit operation. Therefore, the terms "source" and "drain" are interchangeable. When describing the connections of a transistor, the expressions "one of the source or drain" (or first electrode, first terminal, etc.) and "the other of the source or drain" (or second electrode, second terminal, etc.) should be used.

[0484] In addition to the three terminals mentioned above, transistors may have a terminal called a "back gate" (also called the back gate terminal, back gate region, or back gate electrode). In this case, one of the gates or back gate of the transistor may be called the first gate, and the other of the gates or back gate may be called the second gate. Also, in the same transistor, the terms "gate" and "back gate" may be interchangeable. Furthermore, if a transistor has three or more gates, each gate may be called the first gate, second gate, third gate, and so on.

[0485] Furthermore, the voltage between the gate and source (gate-source) (unless otherwise specified, the potential of the source is used as the reference) is sometimes called the "gate voltage," the voltage between the drain and source (drain-source) (unless otherwise specified, the potential of the source is used as the reference) is sometimes called the "drain voltage," and the voltage between the back gate and source (back gate-source) (unless otherwise specified, the potential of the source is used as the reference) is sometimes called the "back gate voltage." Also, the current flowing between the drain and source (unless otherwise specified, the direction from drain to source is considered positive) is sometimes called the "drain current." Note that in n-channel transistors, expressions such as high gate voltage, high drain voltage, and high back gate voltage can be appropriately substituted for each other, and in p-channel transistors, expressions such as low gate voltage, low drain voltage, and low back gate voltage can be appropriately substituted for each other. Similarly, in n-channel transistors, expressions such as low gate voltage, low drain voltage, and low back gate voltage can be appropriately substituted for each other, and in p-channel transistors, expressions such as high gate voltage, high drain voltage, and high back gate voltage can be appropriately substituted for each other.

[0486] The "conducting state" or "on state" of a transistor refers to, for example, a state in which the source and drain of the transistor can be considered to be electrically short-circuited, a state in which the gate voltage is higher than the threshold voltage in an n-channel transistor, or a state in which the gate voltage is lower than the threshold voltage in a p-channel transistor. The "non-conducting state" or "off state" of a transistor refers to, for example, a state in which the source and drain of the transistor can be considered to be electrically disconnected, a state in which the gate voltage is lower than the threshold voltage in an n-channel transistor, or a state in which the gate voltage is higher than the threshold voltage in a p-channel transistor.

[0487] Furthermore, unless otherwise specified, the "off-current" of a transistor refers to the drain current when the transistor is in the off state. Note that the off-current and the current flowing between the gate, source, and drain (also called gate leakage current) are sometimes collectively referred to as leakage current.

[0488] In this specification, "capacitive element" refers to a circuit element having a configuration in which a pair of electrodes are provided with a dielectric material in between. However, capacitive elements are not limited to this and may include, for example, parasitic capacitance between two wires, gate capacitance between the source and drain of a transistor and the gate, etc. Furthermore, terms such as "capacitive element," "parasitic capacitance," and "gate capacitance" may be interchangeable with terms such as "capacitance" and "electrostatic capacitance." In addition, terms such as "pair of electrodes," "pair of wires," "pair of terminals," and "pair of conductive layers" of a capacitive element may be interchangeable.

[0489] In this specification, "switch" refers to a circuit element having multiple terminals and having the function of switching (selecting) the conduction or non-conductivity between those terminals. A switch can be said to have the function of controlling whether or not to allow current to flow between multiple terminals, or the function of controlling whether or not to generate the transmission or reception of electrical signals or the interaction of potentials between multiple terminals. For example, if a switch has two terminals, the state in which the two terminals can be considered to be electrically short-circuited is called the "conducting state" or "on state". Conversely, the state in which the two terminals can be considered to be electrically disconnected is called the "non-conducting state" or "off state". Note that electrical switches, mechanical switches, etc., can be used as switches.

[0490] In this specification, a single circuit element shown in a circuit diagram includes cases where multiple such circuit elements are connected in series, parallel, or series-parallel.

[0491] In this specification, a signal line refers to wiring to which a signal is supplied, and a power line refers to wiring to which a constant potential is supplied. Therefore, the terms "signal line" and "power line" can sometimes be replaced with the term "wiring." For example, a signal line can be considered to have a constant potential if the signal supplied to it does not change. Similarly, a power line can be considered to have a signal if the potential supplied to it changes. Therefore, the terms "potential" and "signal" supplied to wiring can sometimes be interchangeable.

[0492] In this specification, voltage refers to the potential difference from a reference potential (such as ground potential). Therefore, the terms "voltage" and "potential" can sometimes be used interchangeably.

[0493] In this specification, the terms "electrode," "wiring," and "terminal" do not functionally limit these components. Therefore, an electrode may be part of wiring or a terminal, wiring may be part of an electrode or a terminal, and a terminal may be part of an electrode or wiring. Furthermore, "electrode or wiring" includes cases where multiple electrodes or multiple wirings are integrated. Similarly, "terminal" includes cases where multiple electrodes, multiple wirings, or multiple terminals are integrated. Additionally, the terms "electrode," "wiring," and "terminal" may be replaced with terms such as "region" or "conductive layer."

[0494] In this specification, the term "node" may be replaced with terms such as "electrode," "wiring," "terminal," "region," or "conductive layer," depending on the circuit configuration, device structure, etc. Conversely, terms such as "electrode," "wiring," and "terminal" may be replaced with the term "node."

[0495] In this specification, terms containing the words "layer" and "film" may be interchangeable. For example, the terms "conductive layer" and "conductive film" may be interchangeable. For example, the terms "insulating layer" and "insulating film" may be interchangeable. For example, the terms "semiconductor layer" and "semiconductor film" may be interchangeable. Furthermore, in terms containing the words "layer" and "film," these terms may be replaced with other terms. For example, the terms "conductive layer" and "conductive film" may be interchangeable with the term "conductor." For example, the terms "insulating layer" and "insulating film" may be interchangeable with the term "insulator."

[0496] In this specification, terms such as "above" and "below" are used for convenience to describe the positional relationships of the constituent elements. Therefore, these terms can be replaced with other terms and the expression can be appropriately modified. For example, the expression "Element B is located above Element A, and Element C is located below Element A" can be changed to "Element B is located below Element A, and Element C is located above Element A." Similarly, the expression "Element B is located above Element A, and Element C is located below Element A" can be changed to "Element B is located to the left (or right) of Element A, and Element C is located to the right (or left) of Element A." It should be noted that when using the terms "above" or "below," the positional relationship of the constituent elements is not limited to directly above or directly below. Therefore, the term "above" can be replaced with terms such as "upper," "upper side," or "upper layer," and the term "below" can be replaced with terms such as "downward," "lower side," or "lower layer." Furthermore, for example, the expression "element B on element A" is not limited to cases where element B is placed in contact with element A, but also includes cases where other elements (including space) are provided between element A and element B.

[0497] In this specification, "parallel" does not mean strictly parallel. Unless otherwise specified, "parallel" may include a state in which two lines or planes are positioned at an angle of -5° to 5°. Alternatively, it may include a state in which two lines or planes are positioned at an angle of -10° to 10°. Or, it may include a state in which two lines or planes are positioned at an angle of -30° to 30°. Therefore, the term "parallel" may be replaced with terms such as "approximately parallel" or "substantially parallel." Also, "parallel" may mean "parallel or approximately parallel."

[0498] In this specification, "perpendicular" does not mean strictly perpendicular. Unless otherwise specified, "perpendicular" may include a state in which two lines or planes are positioned at an angle of 85° to 95°. Alternatively, it may include a state in which two lines or planes are positioned at an angle of 80° to 100°. Or, it may include a state in which two lines or planes are positioned at an angle of 60° to 120°. Therefore, the term "perpendicular" may be replaced with terms such as "approximately perpendicular" or "substantially perpendicular." Also, "perpendicular" may mean "perpendicular or approximately perpendicular."

[0499] In this specification, when terms such as "identical," "same," "equal," "simultaneous," "consistent," and "uniform" (including their synonyms) are used in reference to count values, measured values, etc., these terms shall include errors. Therefore, unless otherwise specified, these terms may include an error of plus or minus 10%, or an error of plus or minus 20%. Thus, "identical" may mean "identical or approximately identical," "same" may mean "same or approximately the same," "equal" may mean "equal or approximately equal," "simultaneous" may mean "simultaneous or approximately simultaneous," "consistent" may mean "consistent or approximately consistent," and "uniform" may mean "uniform or approximately uniform."

[0500] In this specification, ordinal numbers such as "first," "second," etc., are used to avoid confusion of components and do not limit the number of components, their order, etc. For example, a component referred to as "first" in one embodiment may be referred to as "second" in other embodiments, claims, etc. Also, for example, a component referred to as "first" in one embodiment may be omitted in other embodiments, claims, etc. Furthermore, even if a term does not have an ordinal number in this specification, an ordinal number may be added in the claims. Also, even if a term has an ordinal number in this specification, a different ordinal number may be added in the claims. Furthermore, even if a term has an ordinal number in this specification, an ordinal number may be omitted in the claims.

[0501] In this specification, one of the source or drain (also called the two input / output terminals) of a transistor may be referred to as the first terminal, and the other of the source or drain of a transistor may be referred to as the second terminal. Therefore, a transistor has at least a gate (also called the gate terminal), a first terminal, and a second terminal. In addition, one terminal of a capacitive element (also called one of a pair of terminals) may be referred to as the first terminal, and the other terminal of a capacitive element (also called the other of a pair of terminals) may be referred to as the second terminal. In addition, one terminal of a display element may be referred to as the first terminal, and the other terminal of a display element may be referred to as the second terminal. In addition, one terminal of a liquid crystal element may be referred to as the first terminal, and the other terminal of a liquid crystal element may be referred to as the second terminal. In addition, one terminal of a light-emitting element may be referred to as the first terminal, and the other terminal of a light-emitting element may be referred to as the second terminal. In addition, one terminal of a light-receiving element may be referred to as the first terminal, and the other terminal of a light-receiving element may be referred to as the second terminal. In addition, one of the anode or cathode of a diode (also called one of the pair of terminals) is sometimes called the first terminal, and the other of the anode or cathode of a diode (also called the other of the pair of terminals) is sometimes called the second terminal.

[0502] In this specification, "connection" includes, for example, "electrical connection." When "electrical connection" is used to define the connection relationship of circuit elements as a physical object, "electrical connection" includes, for example, "direct connection" and "indirect connection." "A and B are directly connected" means, for example, that A and B are connected without the use of a circuit element (e.g., a transistor or a switch; however, wiring is not a circuit element). On the other hand, "A and B are indirectly connected" means, for example, that A and B are connected via one or more circuit elements. A, B, and C (described later) refer to objects such as elements, circuits, wiring, electrodes, terminals, semiconductor layers, and conductive layers.

[0503] Here, when we define "A and B are indirectly connected," it refers to the following type of connection, as an example: That is, assuming the circuit is operating, if there are times during the circuit's operation when electrical signals are exchanged or potential interactions occur between A and B, then such a circuit can be defined as having "A and B indirectly connected" as a physical object. Even if there are times when no electrical signals are exchanged or potential interactions occur between A and B, if there are times during the circuit's operation when electrical signals are exchanged or potential interactions occur between A and B, then it can be defined as having "A and B indirectly connected." Note that "A and B are indirectly connected" is a definition of the connection relationship between circuit elements as a physical object. Therefore, for example, even if no power supply voltage is supplied to the circuit and the circuit is not operating, the circuit can still be defined as having "A and B indirectly connected" as a physical object (however, as an example, this is limited to cases where, when power supply voltage is supplied to the circuit and the circuit is operating, electrical signals are exchanged or potential interactions occur between A and B during the circuit's operation).

[0504] The following are specific examples of "indirect connections". First, an example of a case where "A and B are indirectly connected" is when A and B are connected via the source and drain of one or more transistors, as shown in Figures 28A1 and 28A2. Another example of a case where "A and B are indirectly connected" is when A and B are connected via one or more switches. When "A and B are indirectly connected", assuming the circuit is operating, one transistor between A and B will be in an ON state, conducting state, or a state in which current can flow at least once. Note that when "A and B are indirectly connected", this includes the case where one transistor between A and B is in an OFF state or a non-conducting state. When "A and B are indirectly connected" and multiple transistors are connected between A and B, assuming the circuit is operating, each of the multiple transistors between A and B will be in an ON state, conducting state, or a state in which current can flow at least once. In other words, when "A and B are indirectly connected," it is not necessary for all of the transistors to be in an ON state, a conducting state, or a state in which current can flow simultaneously. Therefore, when "A and B are indirectly connected," it includes cases where the transistors between A and B are in an OFF state or a non-conducting state at the same time or at different times. As another example, as shown in Figure 28A3, when A and C are connected via the source and drain of transistor TrP, and B and C are connected via the source and drain of transistor TrQ, it can be defined as "A and C are indirectly connected," "B and C are indirectly connected," or "A and B are indirectly connected." However, as will be discussed later, if a constant potential V is supplied to C from a power supply or GND, it can be said that "A and C are indirectly connected," or "B and C are indirectly connected," but it cannot be said that "A and B are indirectly connected."

[0505] Having shown examples of cases where a connection can be considered "indirect" and cases where it cannot, let's look at another example of a case where a connection cannot be considered "indirect." Even if electrical signals are exchanged or potential interactions occur between A and B during the operation of the circuit, there are exceptional cases where it cannot be said that "A and B are indirectly connected." An example of such an exceptional case is when A and B are connected via an insulator. In other words, when A and B are connected via an insulator, it cannot be said that "A and B are indirectly connected." A specific example of when A and B are connected via an insulator is when a capacitive element is connected between A and B, as shown in Figure 28A4. Another example of when A and B are connected via an insulator is when a transistor gate insulating film is interposed between A and B, as shown in Figure 28A5. In this case, it cannot be said that "A (the gate of the transistor) and B (the source or drain of the transistor) are indirectly connected."

[0506] Another example of a situation where it cannot be said that "A and B are indirectly connected" is when there is no timing for the exchange of electrical signals or potential interaction between A and B. For example, as shown in Figures 28A6 and 28A7, multiple transistors are connected via sources and drains in the path from A to B, and a constant potential V is supplied to the nodes between the transistors from a power source or GND. In this case, it cannot be said that "A and B are indirectly connected," but it can be said that "A and V are indirectly connected," or "B and V are indirectly connected." In Figure 28A3, if A and C are connected via the source and drain of transistor TrP, and B and C are connected via the source and drain of transistor TrQ, and a constant potential V is supplied to C from a power supply or GND, then the connection relationship is the same as in Figures 28A6 and 28A7, so it cannot be said that "A and B are indirectly connected," but it can be said that "A and C are indirectly connected" or "B and C are indirectly connected."

[0507] As shown above, we have provided an example of "indirect connection." As an example, the provisions for "indirect connection" are included in the provisions for "electrical connection," so if "A and B are indirectly connected," then "A and B are electrically connected."

[0508] Next, we will show specific examples of "direct connection." Examples of cases where "A and B are directly connected" include cases where A and B are connected without a circuit element in between, as shown in Figures 28B1, 28B2, and 28B3. Furthermore, as shown in Figures 28B4 and 28B5, when A and B are connected to a power source that supplies a constant potential V, or to GND, without a circuit element in between, we can say that "A and B are directly connected," "A and V are directly connected," or "B and V are directly connected." Furthermore, as shown in Figure 28B6, even when A (or B) is connected to a constant potential V via the source and drain of a transistor, we can say that "A and B are directly connected." Furthermore, since A and V, or B and V, are connected via the source and drain of a transistor, they cannot be said to be directly connected, and we can say that "A and V are indirectly connected," or "B and V are indirectly connected."

[0509] As shown above, an example of "direct connection" has been given, but as an example, since the provisions for "direct connection" are included in the provisions for "electrical connection," if "A and B are directly connected," then "A and B are electrically connected."

[0510] 100: Semiconductor device, 100A: Semiconductor device, 100B: Semiconductor device, 100C: Semiconductor device, 100D: Semiconductor device, 100E: Semiconductor device, 100F: Semiconductor device, 100G: Semiconductor device, 100H: Semiconductor device, 101: Rectifier unit, 110A: Drive circuit, 110B: Drive circuit, 160: Display device, 161: Pixel, 161A: Pixel, 161B: Pixel, 162: Pixel unit, 163: Gate driver unit, 164: Source driver Part, 165: Gate line, 166: Source line, 167: Control unit, M11: Transistor, M12: Transistor, M13: Transistor, M13_1: Transistor, M13_2: Transistor, M13_K: Transistor, M14: Transistor, M15: Transistor, M21: Transistor, M22: Transistor, M23: Transistor, M24: Transistor, M25: Transistor, M31: Transistor, M32 : Transistor, C11: Capacitor element, C31: Capacitor element, D13: Diode, LD: Light-emitting element, LC: Liquid crystal element, GL: Gate line, SL: Source line, CKL: Wiring, OL: Wiring, VLD: Wiring, VLD1: Wiring, VLD2: Wiring, VLS: Wiring, VLS1: Wiring, VLS2: Wiring, BGL: Wiring, IL1: Wiring, IL2: Wiring, ANO: Wiring, CATH: Wiring, COM: Wiring, CS: Wiring, ND11: Node, ND12: Node, ND13: Node, ND14: Node, 200: Transistor, 200A: Transistor, 200B: Transistor, 320: Light-emitting element, 320R: Light-emitting element, 320G: Light-emitting element, 320B: Light-emitting element, 400: Display device, 411: Pixel, 412: Pixel, 412R: Pixel, 412G: Pixel, 412B: Pixel, 490: Display device, 490A: Display device, 490B: Display device, 490C: Display device, 490D: Display device

Claims

It has a first transistor, a second transistor, a third transistor, and a fourth transistor, The first terminal of the first transistor is electrically connected to the first terminal of the second transistor. The second terminal of the first transistor is electrically connected to the first wiring. The second terminal of the second transistor is electrically connected to the second wiring, The gate of the first transistor is electrically connected to the gate of the third transistor, the first terminal of the third transistor, and the first terminal of the fourth transistor. The second terminal of the third transistor is electrically connected to the third wiring. A clock signal is supplied to the first wiring. Semiconductor equipment. 　 In claim 1, The gate of the fourth transistor is electrically connected to the third wiring. Semiconductor equipment. 　 In claim 1, The second terminal of the fourth transistor is electrically connected to the third wiring. Semiconductor equipment. 　 In claim 3, It has a fifth transistor, The first terminal of the fifth transistor is electrically connected to the gate of the first transistor. The gate of the fifth transistor is electrically connected to the gate of the second transistor. Semiconductor equipment. 　 It has a first transistor, a second transistor, a third transistor, and a fourth transistor, The first terminal of the first transistor is electrically connected to the first terminal of the second transistor. The second terminal of the first transistor is electrically connected to the first wiring. The second terminal of the second transistor is electrically connected to the second wiring, The gate of the first transistor is electrically connected to the gate of the third transistor, the first terminal of the third transistor, and the first terminal of the fourth transistor. The second terminal of the third transistor is electrically connected to the first wiring, A clock signal is supplied to the first wiring. Semiconductor equipment. 　 In claim 5, It has a fifth transistor, The first terminal of the fifth transistor is electrically connected to the gate of the first transistor. The gate of the fifth transistor is electrically connected to the gate of the second transistor. Semiconductor equipment. 　 It has a first transistor, a second transistor, a third transistor, and a fourth transistor, The first terminal of the first transistor is electrically connected to the first terminal of the second transistor. The second terminal of the first transistor is electrically connected to the first wiring. The second terminal of the second transistor is electrically connected to the second wiring, The gate of the first transistor is electrically connected to the gate of the third transistor, the first terminal of the third transistor, and the first terminal of the fourth transistor. The gate of the fourth transistor is electrically connected to the second terminal of the fourth transistor. The second terminal of the third transistor is electrically connected to the gate of the fourth transistor or to the first wiring. A clock signal is supplied to the first wiring. Semiconductor equipment. 　 In claim 7, It has a fifth transistor, The first terminal of the fifth transistor is electrically connected to the gate of the first transistor. The gate of the fifth transistor is electrically connected to the gate of the second transistor. Semiconductor equipment. 　 In claim 1, The channel length of the third transistor is greater than the channel length of the first transistor. Semiconductor equipment. 　 In claim 1, Each of the first to fourth transistors includes an oxide semiconductor in its channel formation region. Semiconductor equipment. 　 In claim 10, The oxide semiconductor contains indium, Semiconductor equipment.

Images