Semiconductor device

Abstract

This semiconductor device comprises: a semiconductor element having a semiconductor layer and a first electrode disposed on a first side of the semiconductor layer in a first direction; a first conductive member that is electrically connected to the first electrode and includes a first connection part separated from the first electrode in a second direction intersecting the first direction; a second conductive member that is electrically connected to the first conductive member and includes a second connection part located on a second side of the first connection part in the first direction; and a first bonding layer bonded to the first connection part and the second connection part. The first connection part includes a first main portion and a first extension portion extending in a third direction intersecting the first direction and the second direction with respect to the first main portion. The first main portion and the first extension portion overlap the second connection part when viewed in the first direction.

Description

Semiconductor device

[0001] The present disclosure relates to a semiconductor device.

[0002] Semiconductor devices provided with semiconductor elements have been proposed in various configurations. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a conductor, a semiconductor element, and a conductive member. The semiconductor element is mounted on the conductor. The semiconductor element has electrodes. A conductive member is joined to this electrode via solder. The conductive member is made of a Cu clip and is joined by solder. The conductive member may shift and move so as to rotate, for example, during a reflow process of the solder. If such an unintended movement of the conductive member becomes large, there is a risk of a defect occurring in the joined state of the conductive member.

[0003] Japanese Unexamined Patent Application Publication No. 2021 - 158180

[0004] [Summary] One problem of the present disclosure is to provide a semiconductor device improved from the prior art. In particular, in view of the above circumstances, one problem of the present disclosure is to provide a semiconductor device suitable for improving the joined state of the conductive member.

[0005] The semiconductor device provided by the present disclosure includes a semiconductor element having a semiconductor layer and a first electrode disposed on one side in the thickness direction of the semiconductor layer, a first conductive member that conducts to the first electrode and has a first connection portion spaced apart on one side in a first direction intersecting the thickness direction with respect to the first electrode, a second conductive member that conducts to the first conductive member and has a second connection portion located on the other side in the thickness direction with respect to the first connection portion, and a first joining layer interposed between the first connection portion and the second connection portion and joined to the first connection portion and the second connection portion. The first connection portion has a first main portion and a first extension portion extending in a second direction intersecting the thickness direction and the first direction with respect to the first main portion. The first main portion and the first extension portion overlap the second connection portion when viewed in the thickness direction.

[0006] Figure 1 is a perspective view showing a semiconductor device according to the first embodiment of this disclosure. Figure 2 is a perspective view of a main part showing a semiconductor device according to the first embodiment of this disclosure. Figure 3 is a plan view of a main part showing a semiconductor device according to the first embodiment of this disclosure. Figure 4 is a bottom view showing a semiconductor device according to the first embodiment of this disclosure. Figure 5 is a bottom view of a main part showing a semiconductor device according to the first embodiment of this disclosure. Figure 6 is a cross-sectional view along the line VI-VI in Figure 3. Figure 7 is a cross-sectional view along the line VII-VII in Figure 3. Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 3. Figure 9 is a cross-sectional view along the line IX-IX in Figure 3. Figure 10 is a cross-sectional view along the line X-X in Figure 3. Figure 11 is a partially enlarged view of Figure 3. Figure 12 is a partially enlarged plan view showing one manufacturing process of a semiconductor device according to the first embodiment of this disclosure. Figure 13 is a plan view showing a semiconductor arrangement according to a first modification of the first embodiment. Figure 14 is a partially enlarged view of Figure 13. Figure 15 is a plan view of the main part showing a semiconductor device according to a second modification of the first embodiment. Figure 16 is a partially enlarged view of Figure 15. Figure 17 is an enlarged plan view of the main part showing one manufacturing process of a semiconductor device according to a second modification of the first embodiment. Figure 18 is an enlarged plan view of the main part showing a semiconductor device according to a third modification of the first embodiment. Figure 19 is an enlarged plan view of the main part showing a semiconductor device according to a fourth modification of the first embodiment. Figure 20 is an enlarged plan view of the main part showing a semiconductor device according to a fifth modification of the first embodiment. Figure 21 is an enlarged plan view of the main part showing a semiconductor device according to a sixth modification of the first embodiment. Figure 22 is a plan view of the main part showing a semiconductor device according to a seventh modification of the first embodiment. Figure 23 is a partially enlarged view of Figure 22. Figure 24 is an enlarged plan view of the main part showing one manufacturing process of a semiconductor device according to a seventh modification of the first embodiment. Figure 25 is an enlarged plan view of the main part showing a semiconductor device according to an eighth modification of the first embodiment. Figure 26 is an enlarged plan view of the main part showing one manufacturing process of a semiconductor device according to an eighth modification of the first embodiment. Figure 27 is an enlarged plan view of a main part showing a semiconductor device according to the ninth modification of the first embodiment. Figure 28 is an enlarged plan view of a main part showing a semiconductor device according to the tenth modification of the first embodiment.

[0007] [Detailed Description] Preferred embodiments of this disclosure will be described below with reference to the drawings.

[0008] The terms "first," "second," "third," etc., used in this disclosure are merely labels and are not necessarily intended to assign a sequence to the objects.

[0009] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed in a certain direction" includes "object A overlapping with all of object B" and "object A overlapping with a part of object B." Also, in this disclosure, "a surface A facing direction B (one or the other side of it)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is inclined with respect to direction B.

[0010] First Embodiment: Figures 1 to 11 show a semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A10 of this embodiment comprises a semiconductor element 1, a first conductive member 2, a second conductive member 3, a third conductive member 4, a fourth conductive member 5, a fifth conductive member 6, and a sealing resin 7. The semiconductor device A10 further comprises a conductive bonding material 19, a conductive bonding material 28, a first bonding layer 29, and a conductive bonding material 59. The application of the semiconductor device A10 is not limited in any way, and it can be used in electronic devices equipped with power conversion circuits, such as DC-DC converters.

[0011] Figure 1 is a perspective view showing semiconductor device A10. Figure 2 is a perspective view of the main part of semiconductor device A10, showing the sealing resin 7 through. Figure 3 is a plan view of the main part of semiconductor device A10, showing the sealing resin 7 through. Figure 4 is a bottom view showing semiconductor device A10. Figure 5 is a bottom view of the main part of semiconductor device A10, showing the sealing resin 7 through. Figure 6 is a cross-sectional view along the line VI-VI in Figure 3. Figure 7 is a cross-sectional view along the line VII-VII in Figure 3. Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 3. Figure 9 is a cross-sectional view along the line IX-IX in Figure 3. Figure 10 is a cross-sectional view along the line X-X in Figure 3. Figure 11 is a partially enlarged view of Figure 8. Note that in Figures 2, 3, and 5, the transparent sealing resin 7 is shown by dashed lines.

[0012] In these figures, the z-direction corresponds to the "thickness direction" in this disclosure. One side in the z-direction corresponds to the "one side of the thickness direction" in this disclosure and is referred to as the "z1 side of the z-direction," and the other side in the z-direction corresponds to the "other side of the thickness direction" in this disclosure and is referred to as the "z2 side of the z-direction." Also, "plan view" refers to the view in the z-direction. The x-direction is orthogonal to the z-direction. The x-direction corresponds to an example of the "first direction" in this disclosure. One side in the x-direction corresponds to the "one side of the first direction" and is referred to as the "x1 side of the x-direction." The side opposite to the x1 side (the other side in the x-direction) is referred to as the x2 side. The y-direction is orthogonal to both the z-direction and the x-direction. The y-direction corresponds to an example of the "second direction" in this disclosure. One side in the y-direction is referred to as the y1 side, and the side opposite to the y1 side (the other side in the y-direction) is referred to as the y2 side. Furthermore, the z1 side in the z direction is sometimes referred to as "up," and the z2 side in the z direction is sometimes referred to as "down." Note that terms such as "up," "down," "upper," "downward," "upper surface," and "lower surface" indicate the relative positional relationship of each component in the z direction and do not necessarily define a relationship with the direction of gravity.

[0013] The semiconductor element 1 is an element that performs the electrical function of the semiconductor device A10. In this embodiment, the semiconductor element 1 is a three-terminal element having three electrodes, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In addition, the semiconductor element 1 may be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of the semiconductor device A10, the semiconductor element 1 is an n-channel type MOSFET with a vertical structure. The semiconductor element 1 is rectangular when viewed in the z direction.

[0014] As shown in Figures 2, 3, and 6 to 8, the semiconductor element 1 has a semiconductor layer 10, a first electrode 11, a second electrode 12, and a third electrode 13. The semiconductor layer 10 is a layer containing a semiconductor. The composition of the semiconductor includes, for example, Si (silicon), SiC (silicon carbide), etc. Also, unlike this embodiment, if the semiconductor element 1 is a lateral switching element, the semiconductor layer 10 includes, for example, GaN (gallium nitride).

[0015] The third electrode 13 is positioned on the z1 side in the z direction. A current corresponding to the power converted by the semiconductor element 1 flows through the third electrode 13. In other words, the third electrode 13 corresponds to the source electrode of the semiconductor element 1.

[0016] The second electrode 12 is positioned on the z2 side in the z direction of the semiconductor layer 10. A current corresponding to the power before it is converted by the semiconductor element 1 flows through the second electrode 12. In other words, the second electrode 12 corresponds to the drain electrode of the semiconductor element 1.

[0017] The first electrode 11 is positioned on the z1 side in the z direction of the semiconductor layer 10. A gate voltage for driving the semiconductor element 1 is applied to the first electrode 11. In other words, the first electrode 11 corresponds to the gate electrode of the semiconductor element 1. In a plan view, the area of ​​the first electrode 11 is smaller than the area of ​​the third electrode 13.

[0018] The fourth conductive member 5 includes a portion positioned on the z1 side in the z direction relative to the semiconductor element 1. The fourth conductive member 5 includes a conductive material such as metal, and is composed of, for example, a metal plate. The constituent material of the fourth conductive member 5 includes, for example, Cu (copper). The fourth conductive member 5 is a metal plate that has been appropriately bent. As shown in Figures 2, 3, 6 to 8, and 10, the fourth conductive member 5 has a pad portion 51 and a connecting portion 52.

[0019] The pad portion 51 is the part that is electrically connected to the third electrode 13 of the semiconductor element 1. The shape and size of the pad portion 51 are not limited in any way, and in the illustrated example, it is shaped to overlap most of the third electrode 13 in a plan view.

[0020] As shown in Figures 6 to 8, the third electrode 13 of the semiconductor element 1 is joined to the pad portion 51 via a conductive bonding material 59, with the surface facing z2 in the z-direction being bonded. The pad portion 51 and the third electrode 13 are electrically bonded via the conductive bonding material 59. The constituent material of the conductive bonding material 59 is not particularly limited and may be solder (a metal containing tin and silver). Alternatively, the conductive bonding material 59 may be made of a metal paste containing a metal such as silver (Ag). In addition, a plating layer (not shown) made of silver (Ag) may be formed on the region of the pad portion 51 that is bonded to the semiconductor element 1 (third electrode 13).

[0021] The connecting portion 52 is located on the x1 side in the x-direction relative to the pad portion 51. In the illustrated example, the connecting portion 52 is rectangular in plan view.

[0022] The fifth conductive member 6 is spaced apart from the semiconductor element 1 on the x1 side in the x direction. The fifth conductive member 6 is positioned on the z2 side in the z direction relative to the fourth conductive member 5. The fifth conductive member 6 contains a conductive material such as metal, for example, Cu (copper). The fifth conductive member 6 is composed of, for example, a lead frame. A plating layer (not shown) may also be provided in appropriate places on the fifth conductive member 6. The fifth conductive member 6 is electrically connected to the connection portion 52 of the fourth conductive member 5 by a conductive bonding material 59 such as solder.

[0023] The fifth conductive member 6 has a connecting portion 61, a plurality of terminal portions 62, and a thin-walled extension portion 63.

[0024] The connecting portion 61 is the part that is electrically connected to the connecting portion 52 of the fourth conductive member 5. The shape and size of the connecting portion 61 are not limited in any way, and in the illustrated example, it is a long rectangle with the y direction as the longitudinal direction when viewed in the z direction.

[0025] The multiple terminal portions 62 are connected to the connection portion 61 on the x1 side in the x direction. Each of the multiple terminal portions 62 extends in the x direction when viewed in the z direction and is spaced apart in the y direction. The number of multiple terminal portions 62 is not limited in any way; there may be three as in the illustrated example, two, four or more, or a configuration with only one terminal portion 62. As shown in Figure 6, each terminal portion 62 is exposed from the second resin surface 72 and the third resin surface 73 of the sealing resin 7, which will be described later. The tip surface of each terminal portion 62 is flush with the third resin surface 73. The multiple terminal portions 62 are used, for example, as terminals when mounting a semiconductor device A10.

[0026] The thin-walled extension 63 has a thickness in the z direction that is thinner than the thickness of the connecting portion 61 in the z direction. The thin-walled extension 63 extends from the connecting portion 61. The thin-walled extension 63 is recessed from the z2 side in the z direction relative to the connecting portion 61. In the illustrated example, the thin-walled extension 63 extends from the connecting portion 61 to the x1 and x2 sides in the x direction and to the y1 and y2 sides in the y direction, surrounding the connecting portion 61 when viewed in the z direction. The tip surface of the portion of the thin-walled extension 63 that extends from the connecting portion 61 to the y2 side in the y direction is exposed from the sixth resin surface 76 of the sealing resin 7, which will be described later. The tip surface of the thin-walled extension 63 is flush with the sixth resin surface 76.

[0027] The third conductive member 4 is positioned on the z2 side in the z direction relative to the semiconductor element 1. The third conductive member 4 contains a conductive material such as metal, for example, copper (Cu). The third conductive member 4 is composed of, for example, a lead frame.

[0028] As shown in Figures 2 to 8, the third conductive member 4 has a main surface 401 and a back surface 402. The main surface 401 is the surface facing the z1 side in the z direction. The back surface 402 is the surface facing the z2 side in the z direction. A semiconductor element 1 is mounted on the main surface 401. As shown in Figures 4 to 8, the back surface 402 is exposed from the sealing resin 7.

[0029] As shown in Figures 1 to 10, the third conductive member 4 has an island portion 41, a plurality of terminal portions 42, a thin-walled extension portion 43, and a thick-walled extension portion 44.

[0030] The island portion 41 is the area on which all or part of the semiconductor element 1 is mounted. The island portion 41 includes a part of the main surface 401 and a part of the back surface 402. The shape and size of the island portion 41 are not limited in any way, and in the illustrated example, it is substantially rectangular when viewed in the z direction.

[0031] The multiple terminal portions 42 are parts that connect to the x2 side in the x direction relative to the island portion 41. Each terminal portion 42 includes a part of the main surface 401 and a part of the back surface 402. Each of the multiple terminal portions 42 extends in the x direction when viewed in the z direction and is spaced apart in the y direction. The number of multiple terminal portions 42 is not limited in any way; there may be four as in the illustrated example, or there may be two, three, or five or more. Alternatively, there may be a configuration with only one terminal portion 42. As shown in Figure 6, each terminal portion 42 is exposed from the second resin surface 72 and the fourth resin surface 74 of the sealing resin 7, which will be described later. The tip surface of each terminal portion 42 is flush with the fourth resin surface 74. The multiple terminal portions 42 may be used, for example, as terminals when mounting a semiconductor device A10.

[0032] The thin-walled extension 43 is a portion that includes the main surface 401 but does not include the back surface 402. The thickness of the thin-walled extension 43 in the z direction is thinner than the thickness of the island portion 41 in the z direction. The thin-walled extension 43 extends from the island portion 41. In the illustrated example, the thin-walled extension 43 extends from the island portion 41 in the x1 and x2 directions in the x direction, and in the y1 and y2 directions in the y direction.

[0033] The thick-walled extension 44 protrudes from the island portion 41 in the y-direction. The thick-walled extension 44 includes a part of the main surface 401 and a part of the back surface 402. In the illustrated example, the third conductive member 4 has two thick-walled extensions 44. The two thick-walled extensions 44 protrude from the island portion 41 on both sides in the y-direction. The two thick-walled extensions 44 are exposed from the second resin surface 72, fifth resin surface 75, and sixth resin surface 76 of the sealing resin 7, which will be described later. The tip surfaces of the two thick-walled extensions 44 are flush with the fifth resin surface 75 and the sixth resin surface 76.

[0034] As shown in Figures 3, 6 to 8, etc., the semiconductor element 1 overlaps both the island portion 41 and the thin-walled extension portion 43 when viewed in the z direction.

[0035] As shown in Figures 6 to 8, the main surface 401 of the island portion 41 is joined to the surface of the semiconductor element 1 facing z2 in the z direction via a conductive bonding material 19. The second electrode 12 of the semiconductor element 1 and the main surface 401 are electrically joined via the conductive bonding material 19. The constituent material of the conductive bonding material 19 is not particularly limited and may be solder (a metal containing tin and silver). Alternatively, the conductive bonding material 19 may be made of a metal paste containing a metal such as silver (Ag). In addition, a plating layer (not shown) made of silver (Ag) may be formed in the region of the main surface 401 of the island portion 41 to which the semiconductor element 1 is joined.

[0036] The first conductive member 2 includes a portion positioned on the z1 side in the z direction relative to the semiconductor element 1. The second conductive member 3 includes a conductive material such as metal, and is composed of, for example, a metal plate. The constituent material of the second conductive member 3 includes, for example, Cu (copper). The first conductive member 2 is a metal plate that has been appropriately bent. As shown in Figures 2, 3, 7, 9 to 11, the first conductive member 2 has a pad portion 21 and a first connecting portion 22.

[0037] The pad portion 21 is the part that is electrically connected to the first electrode 11 of the semiconductor element 1. The shape and size of the pad portion 21 are not limited in any way, and in the illustrated example, it is shaped to overlap with the entire first electrode 11 in a plan view.

[0038] As shown in Figure 7, the surface of the pad portion 21 facing z2 in the z-direction is joined to the first electrode 11 of the semiconductor element 1 via a conductive bonding material 28. The pad portion 21 and the first electrode 11 are electrically joined via the conductive bonding material 28. The constituent material of the conductive bonding material 28 is not particularly limited and may be solder (a metal containing tin and silver). Alternatively, the conductive bonding material 28 may be made of a metal paste containing a metal such as silver (Ag). In addition, a plating layer (not shown) made of silver (Ag) may be formed in the region of the pad portion 21 that is joined to the semiconductor element 1 (first electrode 11).

[0039] The first connection portion 22 is located on the x1 side in the x-direction relative to the pad portion 21. The first connection portion 22 is spaced apart from the semiconductor element 1 on the x1 side in the x-direction. In this embodiment, the first connection portion 22 has a first main portion 221 and two first extension portions 222. In the illustrated example, the first main portion 221 is rectangular when viewed in the z-direction. The two first extension portions 222 extend from the first main portion 221 on both sides in the y-direction (y1 side and y2 side in the y-direction). The surface of the first connection portion 22 (first main portion 221 and two first extension portions 222) facing the z2 side in the z-direction is a flat surface.

[0040] The second conductive member 3 is spaced apart from the semiconductor element 1 on the x1 side in the x direction. The second conductive member 3 is positioned on the z2 side in the z direction relative to the first connection portion 22 of the first conductive member 2. The second conductive member 3 contains a conductive material such as metal, for example, Cu (copper). The second conductive member 3 is composed of, for example, a lead frame. A plating layer (not shown) may also be provided in appropriate places on the second conductive member 3. The second conductive member 3 is joined to the first connection portion 22 of the first conductive member 2 by a conductive first bonding layer 29. The constituent material of the first bonding layer 29 is solder (a metal containing tin and silver).

[0041] As shown in Figures 2, 3, 5, 7, 9 to 11, the second conductive member 3 has a second connecting portion 31 and a terminal portion 32.

[0042] The second connection part 31 is a part that is conductively joined to the first connection part 22 of the first conductive member 2. The first connection part 22 is joined to the second connection part 31 via the first bonding layer 29. In the present embodiment, the second connection part 31 has a second main part 311 and two second extension parts 312. In the illustrated example, the second main part 311 is rectangular when viewed in the z direction. The two second extension parts 312 extend from the second main part 311 to both sides in the y direction (the y1 side and the y2 side in the y direction) sandwiching the second main part 311. The surface of the second connection part 31 (the second main part 311 and the two second extension parts 312) facing the z1 side in the z direction is a flat surface. The surface of the second connection part 31 facing the z1 side in the z direction faces the surface of the first connection part 22 facing the z2 side in the z direction. Also, in the present embodiment, a plating layer (not shown) made of silver (Ag) is formed over the entire surface of the second connection part 31 (the second main part 311 and the two second extension parts 312) facing the z1 side in the z direction.

[0043] As shown in FIGS. 2, 3, 7, 9 to 11, the first connection part 22 of the first conductive member 2 overlaps the second connection part 31 when viewed in the z direction. In the illustrated example, when viewed in the z direction, the entirety of the first connection part 22 (the first main part 221 and the two first extension parts 222) overlaps the second connection part 31. Specifically, the first main part 221 overlaps the second main part 311 when viewed in the z direction. When viewed in the z direction, the entirety of the first main part 221 overlaps the second main part 311. Each of the two first extension parts 222 individually overlaps one of the corresponding two second extension parts 312. When viewed in the z direction, the entirety of each first extension part 222 overlaps the corresponding second extension part 312.

[0044] In the present embodiment, the dimensional relationship between the first main part 221 and the first extension part 222 and the second main part 311 and the second extension part 312 is as follows (see FIG. 11). The length L1 of the first main part 221 in the y direction is 50% or more and 120% or less of the length L2 of the second main part 311 in the y direction. The length L3 of the first extension part 222 in the x direction is 50% or more and 120% or less of the length L4 of the second extension part 312 in the x direction.

[0045] As shown in Figures 2, 5, 9, and 10, the second main portion 311 includes thin-walled portions on both sides in the y-direction (y1 and y2 sides in the y-direction) and on the x2 side in the x-direction. The thickness of these thin-walled portions in the z-direction is thinner than that of the other portions. These thin-walled portions are recessed from the z2 side in the z-direction and are covered by the sealing resin 7. On the other hand, in the portions of the second main portion 311 other than the thin-walled portions, the surfaces facing the z2 side in the z-direction are exposed from the sealing resin 7. In addition, each of the two second extensions 312 is thin-walled. Each second extension 312 is recessed from the z2 side in the z-direction. The tip surface of the second extension 312 located on the y1 side in the y-direction relative to the second main portion 311 is exposed from the fifth resin surface 75 of the sealing resin 7, which will be described later. This tip surface is flush with the fifth resin surface 75.

[0046] The terminal portion 32 is connected to the second main portion 311 on the x1 side in the x direction. The terminal portion 32 extends in the x direction when viewed in the z direction. As shown in Figure 7, the terminal portion 32 is exposed from the second resin surface 72 and the third resin surface 73 of the sealing resin 7, which will be described later. The tip surface of the terminal portion 32 is flush with the third resin surface 73. The terminal portion 32 is used, for example, as a terminal when mounting a semiconductor device A10.

[0047] The sealing resin 7 covers the semiconductor element 1 and a portion of each of the first conductive member 2, second conductive member 3, third conductive member 4, fourth conductive member 5, and fifth conductive member 6. The sealing resin 7 has electrical insulating properties. The sealing resin 7 includes, for example, a black epoxy resin containing a filler. The shape of the sealing resin 7 is not limited in any way. As shown in Figures 1, 3 to 10, the sealing resin 7 of this embodiment has a first resin surface 71, a second resin surface 72, a third resin surface 73, a fourth resin surface 74, a fifth resin surface 75, and a sixth resin surface 76.

[0048] The first resin surface 71 is a surface facing the z1 side in the z direction. The second resin surface 72 is a surface facing the z2 side in the z direction. From the second resin surface 72, a part of the second conduction member 3 (the second connection part 31 and the terminal part 32), the back surface 402 of the third conduction member 4, and a part of the fifth conduction member 6 (the connection part 61 and the terminal part 62) are exposed. In the illustrated example, the first resin surface 71 and the second resin surface 72 are flat surfaces, but are not limited thereto, and may be, for example, curved surfaces or bent surfaces. In the illustrated example, the second resin surface 72 and the back surface 402 and the like exposed from the second resin surface 72 are flush with each other.

[0049] The third resin surface 73 is a surface facing the x1 side in the x direction. The fourth resin surface 74 is a surface facing the x2 side in the x direction. In the illustrated example, the third resin surface 73 and the fourth resin surface 74 are flat surfaces, but are not limited thereto, and may be, for example, curved surfaces or bent surfaces. In the present embodiment, the tip surface of the terminal part 32 and the tip surfaces of the plurality of terminal parts 62 are exposed from the third resin surface 73. Further, the tip surfaces of the plurality of terminal parts 42 are exposed from the fourth resin surface 74.

[0050] The fifth resin surface 75 is a surface facing the y1 side in the y direction. The sixth resin surface 76 is a surface facing the y2 side in the y direction. In the illustrated example, the fifth resin surface 75 and the sixth resin surface 76 are flat surfaces, but are not limited thereto, and may be, for example, curved surfaces or bent surfaces. In the present embodiment, the tip surface of the thickened extension part 44 and the tip surface of the second extension part 312 are exposed from the fifth resin surface 75. Further, the tip surface of the thickened extension part 44 and the tip surface of the thin-walled extension part 63 are exposed from the sixth resin surface 76.

[0051] Next, an example of a method for manufacturing the semiconductor device A10 will be described below with reference to FIG. 12. FIG. 12 is an enlarged plan view of a main part showing a step in the manufacture of the semiconductor device A10 and corresponds to the part shown in FIG. 11.

[0052] Figure 12 shows a portion of the lead frame 9 used in the manufacture of the semiconductor device A10, representing the lead frame 9 before cutting. In the state before cutting the lead frame 9, the second conductive member 3 has one second extension 312 and a terminal portion 32 connected to the lead frame 9. Therefore, before cutting the lead frame 9, the second conductive member 3 is connected to the lead frame 9 at two points. Before cutting the lead frame 9, the first conductive member 2 is joined to the second connection portion 31 of the second conductive member 3 and the first electrode 11 of the semiconductor element 1 via the first bonding layer 29 and the conductive bonding material 28. Subsequently, the sealing resin 7 is formed and the lead frame 9 is cut as appropriate to form the second conductive member 3 having the second connection portion 31 and the terminal portion 32.

[0053] Next, the operation of semiconductor device A10 will be explained.

[0054] The semiconductor device A10 includes a first bonding layer 29 joined to a first connection portion 22 of a first conductive member 2 and a second connection portion 31 of a second conductive member 3. The constituent material of the first bonding layer 29 is, for example, solder. The first connection portion 22, which is joined to the second connection portion 31 by solder (first bonding layer 29), may shift relative to the second connection portion 31, for example, during solder reflow processing. Such unintended movement of the first connection portion 22 can occur in the area where the molten first bonding layer 29 wets and spreads during reflow. As a result, the first connection portion 22 may move in an area that overlaps with the second connection portion 31 when viewed in the z direction.

[0055] In the semiconductor device A10, the first connection portion 22 is spaced apart from the first electrode 11 of the semiconductor element 1 to which the pad portion 21 is joined, on the x1 side in the x direction. The first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular in shape. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A10 is improved.

[0056] Furthermore, if the first connecting portion 22 has a configuration in which it comprises a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. As a result, the bonding strength between the second connecting portion 31 and the first connecting portion 22 is increased, and the bonding reliability of the semiconductor device A10 is improved.

[0057] In the semiconductor device A10, the second connection portion 31 has a second main portion 311 and a second extension portion 312 extending in the y direction from the second main portion 311. The first main portion 221 overlaps the second main portion 311 when viewed in the z direction, and the first extension portion 222 overlaps the second extension portion 312 when viewed in the z direction. With this configuration, rotational movement in the z direction, movement in the x direction, and movement in the y direction are suppressed in both the first main portion 221 relative to the second main portion 311 and the first extension portion 222 relative to the second extension portion 312 during solder reflow processing. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A10 is further improved.

[0058] The length L1 of the first main portion 221 in the y direction is 50% to 120% of the length L2 of the second main portion 311 in the y direction. The length L3 of the first extension portion 222 in the x direction is 50% to 120% of the length L4 of the second extension portion 312 in the x direction. With this configuration, rotational movement in the z direction, movement in the x direction, and movement in the y direction are appropriately suppressed in both the first main portion 221 relative to the second main portion 311 and the first extension portion 222 relative to the second extension portion 312 during solder reflow processing. As a result, the bonding state of the first connecting portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A10 is further improved.

[0059] In the semiconductor device A10, the first connecting portion 22 has two first extensions 222 that extend from the first main portion 221 on both sides in the y-direction (y1 side and y2 side in the y-direction). The second connecting portion 31 has two second extensions 312 that extend from the second main portion 311 on both sides in the y-direction (y1 side and y2 side in the y-direction). Each of the two first extensions 222 overlaps individually with the corresponding of the two second extensions 312. With this configuration, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. As a result, the bonding strength between the second connecting portion 31 and the first connecting portion 22 is increased, and the bonding reliability of the semiconductor device A10 is further improved.

[0060] Figures 13 to 28 show modified examples of the semiconductor device according to the first embodiment of this disclosure. In these figures, elements that are the same or similar as those in the above embodiment are denoted by the same reference numerals as in the above embodiment, and redundant explanations are omitted. Furthermore, the configurations of each part in each modified example can be appropriately combined with each other to the extent that no technical inconsistencies arise. In each modified example, the configuration of the first connection portion 22 of the first conductive member 2 and the second connection portion 31 of the second conductive member 3 differs from that of the semiconductor device A10 in the above embodiment.

[0061] First Modification: Figures 13 and 14 show a first modification of semiconductor device A10. Figure 13 is a plan view of the main part of semiconductor device A11 according to this modification. Figure 14 is a partially enlarged view of Figure 13 and corresponds to the part shown in Figure 11.

[0062] In the semiconductor device A11 of this modified example, the first connecting portion 22 has a first main portion 221 and one first extension portion 222. The first extension portion 222 extends in the y direction (towards y1 in the y direction) relative to the first main portion 221. The second connecting portion 31 has a second main portion 311 and one second extension portion 312. The second extension portion 312 extends in the y direction (towards y1 in the y direction) relative to the second main portion 311. When viewed in the z direction, the entirety of the first extension portion 222 overlaps with the second extension portion 312.

[0063] In the semiconductor device A11, the first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular in shape. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A11 is improved.

[0064] Furthermore, if the first connecting portion 22 has a configuration in which it comprises a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. This increases the bonding strength between the second connecting portion 31 and the first connecting portion 22, thereby improving the bonding reliability of the semiconductor device A11. In addition, the semiconductor device A11 exhibits the same effects and advantages as the semiconductor device A10 in the above embodiment, within the same range of configuration as the semiconductor device A10.

[0065] Second Modification: Figures 15 and 16 show a second modification of semiconductor device A10. Figure 15 is a plan view of the main part of semiconductor device A12 according to this modification. Figure 16 is a partially enlarged view of Figure 14 and corresponds to the part shown in Figure 11.

[0066] In the semiconductor device A12 of this modified example, the first connecting portion 22 has a first main portion 221 and one first extension portion 222. The first extension portion 222 extends toward the y1 side in the y direction relative to the first main portion 221. The second connecting portion 31 has a second main portion 311, one second extension portion 312, and one third extension portion 313. The second extension portion 312 and the third extension portion 313 extend toward the y1 side in the y direction relative to the second main portion 311. The third extension portion 313 is separated from the second extension portion 312 in the x direction (towards the x1 side in the x direction). When viewed in the z direction, the entire first extension portion 222 overlaps the second extension portion 312.

[0067] Next, an example of a method for manufacturing the semiconductor device A12 will be described with reference to Figure 17. Figure 17 is an enlarged plan view of a key part showing one step in the manufacturing process of the semiconductor device A12, and corresponds to the part shown in Figure 16.

[0068] Figure 17 shows a portion of the lead frame 9 used in the manufacture of the semiconductor device A12, representing the lead frame 9 before cutting. In the state before cutting the lead frame 9, the second conductive member 3 has one second extension 312, one third extension 313, and a terminal portion 32 connected to the lead frame 9. Therefore, before cutting the lead frame 9, the second conductive member 3 is connected to the lead frame 9 at three points. Before cutting the lead frame 9, the first conductive member 2 is joined to the second connection portion 31 of the second conductive member 3 and the first electrode 11 of the semiconductor element 1 via the first bonding layer 29 and the conductive bonding material 28. Subsequently, the sealing resin 7 is formed and the lead frame 9 is cut as appropriate to form the second conductive member 3 having the second connection portion 31 and the terminal portion 32.

[0069] In the semiconductor device A12, the first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular in shape. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A12 is improved.

[0070] Furthermore, if the first connecting portion 22 has a configuration in which it comprises a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. As a result, the bonding strength between the second connecting portion 31 and the first connecting portion 22 is increased, and the bonding reliability of the semiconductor device A12 is improved.

[0071] During the manufacturing of the semiconductor device A12, before the lead frame 9 is cut, the second conductive member 3 has one second extension 312, one third extension 313, and a terminal portion 32 connected to the lead frame 9. As a result, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at three points, which is one additional point of support from the lead frame 9 compared to the semiconductor device A10 of the above embodiment. With this configuration, it is possible to suppress changes in the posture of the second conductive member 3, such as tilting, due to deformation caused by external forces before the lead frame 9 is cut. This further improves the bonding reliability of the semiconductor device A12. In addition, the semiconductor device A12 has the same effects and advantages as the semiconductor device A10 of the above embodiment within the same configuration range.

[0072] Third Modification: Figure 18 shows a third modification of semiconductor device A10. Figure 18 is an enlarged plan view of the main part of semiconductor device A13 according to this modification, and corresponds to the part shown in Figure 11.

[0073] The semiconductor device A13 of this modified example has a configuration that adds one first extension 222 and one second extension 312 compared to the semiconductor device A12 of the modified example described above. In the semiconductor device A13, the first connecting portion 22 has a first main portion 221 and two first extensions 222. The two first extensions 222 extend from the first main portion 221 on both sides in the y direction (y1 side and y2 side in the y direction). The second connecting portion 31 has a second main portion 311, two second extensions 312 and one third extension 313. The two second extensions 312 extend from the second main portion 311 on both sides in the y direction (y1 side and y2 side in the y direction). The third extension 313 extends from the second main portion 311 on the y1 side in the y direction. The third extension 313 is separated from the second extension 312 in the x-direction (towards x1 in the x-direction). Each of the two first extensions 222 individually overlaps with one of the corresponding second extensions 312. Viewed in the z-direction, the entirety of each first extension 222 overlaps with the corresponding second extension 312.

[0074] Although a detailed illustration is omitted, during the manufacturing of semiconductor device A13, similar to the manufacturing of semiconductor device A12 as shown in Figure 17, the second conductive member 3 has one second extension 312, one third extension 313, and a terminal portion 32 connected to the lead frame 9 before the lead frame 9 is cut. Thus, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at three points.

[0075] In the semiconductor device A13, the first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular in shape. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A13 is improved.

[0076] Furthermore, if the first connecting portion 22 has a configuration in which it comprises a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. This increases the bonding strength between the second connecting portion 31 and the first connecting portion 22, thereby improving the bonding reliability of the semiconductor device A13.

[0077] During the manufacturing of semiconductor device A13, before the lead frame 9 is cut, the second conductive member 3 has one second extension 312, one third extension 313, and a terminal portion 32 connected to the lead frame 9. As a result, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at three points, which is one additional point of support from the lead frame 9 compared to semiconductor device A10 of the above embodiment. With this configuration, it is possible to suppress changes in the posture of the second conductive member 3, such as tilting, due to deformation caused by external forces before the lead frame 9 is cut. This further improves the bonding reliability of semiconductor device A13. In addition, semiconductor device A13 has the same effects and advantages as semiconductor device A10 of the above embodiment within the same range of configuration as semiconductor device A10.

[0078] Fourth Modification: Figure 19 shows a fourth modification of semiconductor device A10. Figure 19 is an enlarged plan view of the main part of semiconductor device A14 according to this modification, and corresponds to the part shown in Figure 11.

[0079] In the semiconductor device A14 of this modified example, the first connecting portion 22 further has a fifth extension portion 223 compared to the semiconductor device A13 of the modified example. The fifth extension portion 223 extends in the y direction (towards the y1 side in the y direction) relative to the first main portion 221. Viewed in the z direction, the fifth extension portion 223 overlaps with the third extension portion 313. In addition, in this modified example, the distance D1 between the first extension portion 222 and the fifth extension portion 223 in the x direction is 30% to 120% of the length L3 of the first extension portion 222 in the x direction.

[0080] Although a detailed illustration is omitted, during the manufacturing of semiconductor device A14, similar to the manufacturing of semiconductor device A12 as shown in Figure 17, the second conductive member 3 has one second extension 312, one third extension 313, and a terminal portion 32 connected to the lead frame 9 before the lead frame 9 is cut. Thus, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at three points.

[0081] In the semiconductor device A14, the first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A14 is improved.

[0082] Furthermore, if the first connecting portion 22 has a configuration in which it comprises a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. As a result, the bonding strength between the second connecting portion 31 and the first connecting portion 22 is increased, and the bonding reliability of the semiconductor device A14 is improved.

[0083] In the semiconductor device A14, the first connecting portion 22 has two first extensions 222 extending from the first main portion 221 on both sides in the y-direction (y1 side and y2 side in the y-direction), and a fifth extension 223 extending from the first main portion 221 in the y-direction (y1 side in the y-direction). The first main portion 221, the two first extensions 222, and the fifth extension 223 of the first connecting portion 22 are joined to the second connecting portion 31. With this configuration, the joining area between the second connecting portion 31 and the first connecting portion 22 can be increased. As a result, the joining strength between the second connecting portion 31 and the first connecting portion 22 is increased, and the joining reliability of the semiconductor device A14 is further improved.

[0084] During the manufacturing of semiconductor device A14, before the lead frame 9 is cut, the second conductive member 3 has one second extension 312, one third extension 313, and a terminal portion 32 connected to the lead frame 9. As a result, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at three points, which is one additional point of support from the lead frame 9 compared to semiconductor device A10 of the above embodiment. With this configuration, it is possible to suppress changes in the posture of the second conductive member 3, such as tilting, due to deformation caused by external forces before the lead frame 9 is cut. This further improves the bonding reliability of semiconductor device A14. In addition, semiconductor device A14 exhibits the same effects and advantages as semiconductor device A10 of the above embodiment within the same configuration range.

[0085] Fifth Modification: Figure 20 shows a fifth modification of semiconductor device A10. Figure 20 is an enlarged plan view of the main part of semiconductor device A15 according to this modification, and corresponds to the part shown in Figure 11.

[0086] In the semiconductor device A15 of this modified example, the first connecting portion 22 has a first main portion 221, one first extension portion 222, and one fifth extension portion 223. The first extension portion 222 and the fifth extension portion 223 extend in the y direction (towards y1 in the y direction) relative to the first main portion 221. The fifth extension portion 223 is separated from the first extension portion 222 in the x direction (towards x1 in the x direction). The second connecting portion 31 has a second main portion 311 and one second extension portion 312. The second extension portion 312 extends in the y direction (towards y1) relative to the second main portion 311. The length of the second extension portion 312 in the x direction is longer than the length L4 of the second extension portion 312 in the x direction in the above embodiment (semiconductor device A10). Viewed in the z-direction, the first extension 222 and the fifth extension 223 overlap the second extension 312.

[0087] In the semiconductor device A15, the first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular in shape. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A15 is improved.

[0088] Furthermore, if the first connecting portion 22 has a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. This increases the bonding strength between the second connecting portion 31 and the first connecting portion 22, improving the bonding reliability of the semiconductor device A15. In the semiconductor device A15, the first connecting portion 22 further has a fifth extension portion 223. The first main portion 221, the first extension portion 222, and the fifth extension portion 223 of the first connecting portion 22 are bonded to the second connecting portion 31. With this configuration, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased even further. This increases the bonding strength between the second connecting portion 31 and the first connecting portion 22, further improving the bonding reliability of the semiconductor device A15.

[0089] Sixth Modification: Figure 21 shows a sixth modification of semiconductor device A10. Figure 21 is an enlarged plan view of the main part of semiconductor device A16 according to this modification, and corresponds to the part shown in Figure 11.

[0090] In the modified semiconductor device A16, the first connecting portion 22 has a first main portion 221, one first extension portion 222, and one fifth extension portion 223. The second connecting portion 31 has a second main portion 311, one second extension portion 312, and one third extension portion 313. Compared to the modified semiconductor device A11 described above, the semiconductor device A16 has an additional configuration with the fifth extension portion 223 and the third extension portion 313. The fifth extension portion 223 extends in the y direction (towards y2 in the y direction) relative to the first main portion 221. The fifth extension portion 223 is separated from the first extension portion 222 in the x direction (towards x1 in the x direction). The third extension portion 313 extends in the y direction (towards y2 in the y direction) relative to the second main portion 311. The third extension 313 is separated from the second extension 312 in the x-direction (towards x1 in the x-direction). Viewed in the z-direction, the fifth extension 223 overlaps with the third extension 313.

[0091] In the semiconductor device A16, the first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular in shape. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A16 is improved.

[0092] Furthermore, if the first connecting portion 22 has a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. This increases the bonding strength between the second connecting portion 31 and the first connecting portion 22, improving the bonding reliability of the semiconductor device A16. In the semiconductor device A16, the first connecting portion 22 further has a fifth extension portion 223. The first main portion 221, the first extension portion 222, and the fifth extension portion 223 of the first connecting portion 22 are bonded to the second connecting portion 31. With this configuration, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased even further. This increases the bonding strength between the second connecting portion 31 and the first connecting portion 22, further improving the bonding reliability of the semiconductor device A16.

[0093] Seventh Modification: Figures 22 and 23 show a seventh modification of semiconductor device A10. Figure 22 is a plan view of the main part of semiconductor device A17 according to this modification. Figure 23 is a partially enlarged view of Figure 22 and corresponds to the part shown in Figure 11.

[0094] In the semiconductor device A17 of this modified example, the first connecting portion 22 has a first main portion 221 and two first extension portions 222. The second connecting portion 31 has a second main portion 311, two second extension portions 312, and a fourth extension portion 314. Compared to the semiconductor device A10 of the above embodiment, the semiconductor device A17 has an additional fourth extension portion 314. The fourth extension portion 314 is connected to one of the second extension portions 312 (a second extension portion 312 that extends toward the y2 side in the y direction relative to the second main portion 311) and extends toward the x direction (towards the x1 side in the x direction) relative to the second extension portion 312. The fourth extension portion 314 is separated from the second main portion 311 in the y direction (towards the y2 side in the y direction).

[0095] Next, an example of a manufacturing method for semiconductor device A17 will be described with reference to Figure 24. Figure 24 is an enlarged plan view of a key part showing one step in the manufacturing process of semiconductor device A17, and corresponds to the part shown in Figure 23.

[0096] Figure 24 shows a portion of the lead frame 9 used in the manufacture of the semiconductor device A17, representing the lead frame 9 before cutting. In the state before cutting the lead frame 9, the second conductive member 3 has one second extension 312, a fourth extension 314, and a terminal portion 32 connected to the lead frame 9. Therefore, before cutting the lead frame 9, the second conductive member 3 is connected to the lead frame 9 at three points. Before cutting the lead frame 9, the first conductive member 2 is joined to the second connection portion 31 of the second conductive member 3 and the first electrode 11 of the semiconductor element 1 via the first bonding layer 29 and the conductive bonding material 28. Subsequently, the sealing resin 7 is formed and the lead frame 9 is cut as appropriate to form the second conductive member 3 having the second connection portion 31 and the terminal portion 32.

[0097] In the semiconductor device A17, the first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular in shape. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A17 is improved.

[0098] Furthermore, if the first connecting portion 22 has a configuration in which it comprises a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. This increases the bonding strength between the second connecting portion 31 and the first connecting portion 22, thereby improving the bonding reliability of the semiconductor device A17.

[0099] During the manufacturing of semiconductor device A17, before the lead frame 9 is cut, the second conductive member 3 has one second extension 312, a fourth extension 314, and a terminal portion 32 connected to the lead frame 9. As a result, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at three points, which is one additional point of support from the lead frame 9 compared to semiconductor device A10 of the above embodiment. With this configuration, it is possible to suppress changes in the posture of the second conductive member 3, such as tilting, due to deformation caused by external forces before the lead frame 9 is cut. This further improves the bonding reliability of semiconductor device A17. In addition, semiconductor device A17 has the same effects and advantages as semiconductor device A10 of the above embodiment within the same configuration range.

[0100] Eighth Modification: Figure 25 shows the eighth modification of semiconductor device A10. Figure 25 is an enlarged plan view of the main part of semiconductor device A18 according to this modification, and corresponds to the part shown in Figure 11.

[0101] In the modified semiconductor device A18, the first connecting portion 22 has a first main portion 221 and two first extension portions 222. The second connecting portion 31 has a second main portion 311, two second extension portions 312, two third extension portions 313, and a fourth extension portion 314. Compared to the modified semiconductor device A17, the semiconductor device A18 has two additional third extension portions 313. The two third extension portions 313 extend from the second main portion 311 on both sides of the second main portion 311 in the y direction (y1 side and y2 side in the y direction). The third extension portions 313 are separated from the second extension portions 312 in the x direction (x1 side in the x direction). The fourth extension 314 connects to one of the second extensions 312 (the second extension 312 extending toward the y2 side in the y direction relative to the second main part 311) and one of the third extensions 313 (the third extension 313 extending toward the y2 side in the y direction relative to the second main part 311), and extends in the x direction. The fourth extension 314 is separated from the second main part 311 in the y direction (towards the y2 side in the y direction).

[0102] Next, an example of a manufacturing method for semiconductor device A18 will be described with reference to Figure 26. Figure 26 is an enlarged plan view of a key part showing one step in the manufacturing process of semiconductor device A18, and corresponds to the part shown in Figure 25.

[0103] Figure 26 shows a portion of the lead frame 9 used in the manufacture of the semiconductor device A18, representing the lead frame 9 before cutting. In the state before cutting the lead frame 9, the second conductive member 3 has one second extension 312, one third extension 313, a fourth extension 314, and a terminal portion 32 connected to the lead frame 9. Therefore, before cutting the lead frame 9, the second conductive member 3 is connected to the lead frame 9 at four points. Before cutting the lead frame 9, the first conductive member 2 is joined to the second connection portion 31 of the second conductive member 3 and the first electrode 11 of the semiconductor element 1 via the first bonding layer 29 and the conductive bonding material 28. Subsequently, the sealing resin 7 is formed and the lead frame 9 is cut as appropriate to form the second conductive member 3 having the second connection portion 31 and the terminal portion 32.

[0104] In the semiconductor device A18, the first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A18 is improved.

[0105] Furthermore, if the first connecting portion 22 has a configuration in which it comprises a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. As a result, the bonding strength between the second connecting portion 31 and the first connecting portion 22 is increased, and the bonding reliability of the semiconductor device A18 is improved.

[0106] During the manufacturing of semiconductor device A18, before the lead frame 9 is cut, the second conductive member 3 has one second extension 312, one third extension 313, a fourth extension 314, and a terminal portion 32 connected to the lead frame 9. As a result, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at four points, which is two additional points of support on the lead frame 9 compared to semiconductor device A10 of the above embodiment. With this configuration, it is possible to suppress changes in the posture of the second conductive member 3, such as tilting, due to deformation caused by external forces before the lead frame 9 is cut. This further improves the bonding reliability of semiconductor device A18. In addition, semiconductor device A18 has the same effects and advantages as semiconductor device A10 of the above embodiment within the same range of configuration as semiconductor device A10.

[0107] Ninth Modification: Figure 27 shows the ninth modification of semiconductor device A10. Figure 27 is an enlarged plan view of the main part of semiconductor device A19 according to this modification, and corresponds to the part shown in Figure 11.

[0108] In semiconductor device A19, the first connection portion 22 has a first main portion 221, two first extension portions 222, and two fifth extension portions 223. The second connection portion 31 has a second main portion 311, two second extension portions 312, and two third extension portions 313. Compared to semiconductor device A14 shown in Figure 19, semiconductor device A19 has the addition of fifth extension portions 223 and third extension portions 313. The two fifth extension portions 223 extend from the first main portion 221 on both sides in the y direction (y1 side and y2 side in the y direction), flanking the first main portion 221. The two third extension portions 313 extend from the second main portion 311 on both sides in the y direction (y1 side and y2 side in the y direction), flanking the second main portion 311. Each of the two fifth extensions 223 individually overlaps with one of the corresponding third extensions 313. In this modified example, the distance D1 between the first extension 222 and the fifth extension 223 in the x-direction is 30% to 120% of the x-direction length L3 of the first extension 222.

[0109] Although a detailed illustration is omitted, during the manufacturing of semiconductor device A19, similar to the manufacturing of semiconductor device A12 as shown in Figure 17, the second conductive member 3 has one second extension 312, one third extension 313, and a terminal portion 32 connected to the lead frame 9 before the lead frame 9 is cut. Thus, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at three points.

[0110] In the semiconductor device A19, the first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular in shape. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A19 is improved.

[0111] Furthermore, if the first connecting portion 22 has a configuration in which it comprises a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. As a result, the bonding strength between the second connecting portion 31 and the first connecting portion 22 is increased, and the bonding reliability of the semiconductor device A19 is improved.

[0112] In the semiconductor device A19, the first connecting portion 22 has two first extensions 222 extending from the first main portion 221 on both sides in the y-direction (y1 side and y2 side in the y-direction) and two fifth extensions 223 extending from the first main portion 221 on both sides in the y-direction (y1 side and y2 side in the y-direction). The first main portion 221, the two first extensions 222, and the two fifth extensions 223 of the first connecting portion 22 are joined to the second connecting portion 31. With this configuration, the joining area between the second connecting portion 31 and the first connecting portion 22 can be increased. As a result, the joining strength between the second connecting portion 31 and the first connecting portion 22 is increased, and the joining reliability of the semiconductor device A19 is further improved.

[0113] During the manufacturing of semiconductor device A19, before the lead frame 9 is cut, the second conductive member 3 has one second extension 312, one third extension 313, and a terminal portion 32 connected to the lead frame 9. As a result, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at three points, which is one additional point of support from the lead frame 9 compared to semiconductor device A10 of the above embodiment. With this configuration, it is possible to suppress changes in the posture of the second conductive member 3, such as tilting, due to deformation caused by external forces before the lead frame 9 is cut. This further improves the bonding reliability of semiconductor device A19. In addition, semiconductor device A19 has the same effects and advantages as semiconductor device A10 of the above embodiment within the same range of configuration as semiconductor device A10.

[0114] Tenth Modification: Figure 28 shows the tenth modification of semiconductor device A10. Figure 28 is an enlarged plan view of the main part of semiconductor device A20 according to this modification, and corresponds to the part shown in Figure 11.

[0115] In semiconductor device A20, the first connection portion 22 has a first main portion 221, two first extension portions 222, and two fifth extension portions 223. The second connection portion 31 has a second main portion 311, two second extension portions 312, two third extension portions 313, and a fourth extension portion 314. Compared to semiconductor device A19 shown in Figure 27, semiconductor device A20 has an additional fourth extension portion 314. The fourth extension portion 314 connects to one second extension portion 312 (a second extension portion 312 that extends to the y2 side in the y direction relative to the second main portion 311) and one third extension portion 313 (a third extension portion 313 that extends to the y2 side in the y direction relative to the second main portion 311), and extends in the x direction. The fourth extension 314 is separated from the second main portion 311 in the y direction (towards the y2 side in the y direction).

[0116] Although a detailed illustration is omitted, during the manufacturing of semiconductor device A20, similar to the manufacturing of semiconductor device A18 as shown in Figure 26, the second conductive member 3 has one second extension 312, one third extension 313, a fourth extension 314, and a terminal portion 32 connected to the lead frame 9 before the lead frame 9 is cut. As a result, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at four points.

[0117] In the semiconductor device A20, the first connection portion 22 has a first main portion 221 and a first extension portion 222. The first extension portion 222 extends in the y direction relative to the first main portion 221. The first main portion 221 and the first extension portion 222 overlap the second connection portion 31 when viewed in the z direction. With this configuration in which the first connection portion 22 has a first main portion 221 and a first extension portion 222, for example, the rotational movement of the first connection portion 22 in the z direction is suppressed during solder reflow processing, compared to the case where the entire first connection portion 22 is rectangular in shape. As a result, the bonding state of the first connection portion 22 (first conductive member 2) is stabilized, and the bonding reliability of the semiconductor device A20 is improved.

[0118] Furthermore, if the first connecting portion 22 has a configuration in which it has a first main portion 221 and a first extension portion 222 extending from the first main portion 221, the bonding area between the second connecting portion 31 and the first connecting portion 22 can be increased. As a result, the bonding strength between the second connecting portion 31 and the first connecting portion 22 is increased, and the bonding reliability of the semiconductor device A20 is improved.

[0119] In the semiconductor device A20, the first connecting portion 22 has two first extensions 222 extending from the first main portion 221 on both sides in the y-direction (y1 side and y2 side in the y-direction) and two fifth extensions 223 extending from the first main portion 221 on both sides in the y-direction (y1 side and y2 side in the y-direction). The first main portion 221, the two first extensions 222, and the two fifth extensions 223 of the first connecting portion 22 are joined to the second connecting portion 31. With this configuration, the joining area between the second connecting portion 31 and the first connecting portion 22 can be increased. As a result, the joining strength between the second connecting portion 31 and the first connecting portion 22 is increased, and the joining reliability of the semiconductor device A20 is further improved.

[0120] During the manufacturing of semiconductor device A20, before the lead frame 9 is cut, the second conductive member 3 has one second extension 312, one third extension 313, a fourth extension 314, and a terminal portion 32 connected to the lead frame 9. As a result, before the lead frame 9 is cut, the second conductive member 3 is connected to the lead frame 9 at four points, which is two additional points of support on the lead frame 9 compared to semiconductor device A10 of the above embodiment. With this configuration, it is possible to suppress changes in the posture of the second conductive member 3, such as tilting, due to deformation caused by external forces before the lead frame 9 is cut. This further improves the bonding reliability of semiconductor device A20. In addition, semiconductor device A20 has the same effects and advantages as semiconductor device A10 of the above embodiment within the same range of configuration as semiconductor device A10.

[0121] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways.

[0122] In the above embodiment, the case was described in which the first extension portion 222 and the fifth extension portion 223 of the first connecting portion 22, and the second extension portion 312 and the third extension portion 313 of the second connecting portion 31, extend from the first main portion 221 and the second main portion 311 in the y direction perpendicular to the z direction and the x direction, respectively. The disclosure is not limited thereto, and the direction in which the first extension portion 222, the fifth extension portion 223, the second extension portion 312, and the third extension portion 313 extend from the first main portion 221 or the second main portion 311 (second direction) may be any direction that intersects the z direction (thickness direction) and the x direction (first direction).

[0123] In the above embodiment, a case was described in which a silver (Ag) plating layer is formed over the entire surface of the second connecting portion 31 facing z1 in the z direction, but the disclosure is not limited thereto. For example, a silver (Ag) plating layer may be formed partially over a predetermined area of ​​the surface of the second connecting portion 31 facing z1 in the z direction. Also, grooves or the like may be formed in the portion of the surface of the second connecting portion 31 facing z1 in the z direction where the silver (Ag) plating layer is formed.

[0124] This disclosure includes the following configuration: 1. A semiconductor element (1) having a semiconductor layer (10) and a first electrode (11) disposed on one side (z1 side) of the thickness direction (z) of the semiconductor layer (10); a first conductive member (2) having a first connecting portion (22) that is conductive to the first electrode (11) and is separated from the first electrode (11) on one side (x1 side) of a first direction (x) intersecting the thickness direction (z); a second conductive member (3) having a second connecting portion (31) that is conductive to the first conductive member (2) and is located on the other side (z2 side) of the thickness direction (z) relative to the first connecting portion (22); and a first bonding layer (29) interposed between the first connecting portion (22) and the second connecting portion (31) and bonded to the first connecting portion (22) and the second connecting portion (31), The first connecting portion (22) has a first main portion (221) and at least one first extension portion (222) extending from the first main portion (221) in a second direction (y) intersecting the thickness direction (z) and the first direction (x), and the first main portion (221) and the at least one first extension portion (222) overlap the second connecting portion (31) when viewed in the thickness direction (z), semiconductor devices (A10, A11, A12, A13, A14, A15, A16, A17, A18, A19, A20). Note 2. The second connecting portion (31) has a second main portion (311) and at least one second extension portion (312) extending in the second direction (y) relative to the second main portion (311), the first main portion (221) overlaps the second main portion (311) when viewed in the thickness direction (z), and the at least one first extension portion (222) overlaps the at least one second extension portion (312) when viewed in the thickness direction (z), as described in Appendix 1 (A10, A11, A12, A13, A14, A15, A16, A17, A18, A19, A20).Note 3. The semiconductor device (A10, A13, A14, A17, A18, A19, A20) described in Note 2, wherein the at least one first extension (222) has two first extensions (222) that extend from the first main portion (221) to both sides (y1 side and y2 side) in the second direction (y), and the at least one second extension (312) has two second extensions (312) that extend from the second main portion (311) to both sides (y1 side and y2 side) in the second direction (y). Note 4. The semiconductor device according to Appendix 2 or 3 (A10, A11, A12, A13, A14, A16, A17, A18, A19, A20), wherein the length (L1) of the first main portion (221) in the second direction (y) is 50% or more and 120% or less of the length (L2) of the second main portion (311) in the second direction (y). Appendix 5. The semiconductor device according to any one of Appendix 2 to 4 (A10, A11, A12, A13, A14, A16, A17, A18, A19, A20), wherein the length (L3) of the at least one first extension portion (222) in the first direction (x) is 50% or more and 120% or less of the length (L4) of the at least one second extension portion (312) in the first direction (x). Appendix 6. The semiconductor device (A12, A13, A14, A16, A18, A19, A20) according to any one of appendices 2 to 5, wherein the second connecting portion (31) has at least one third extension portion (313) extending in the second direction (y) relative to the second main portion (311), and the at least one third extension portion (313) is spaced apart in the first direction (x) relative to the at least one second extension portion (312). Appendix 7. The semiconductor device (A17, A18, A20) according to appendice 3, wherein the second connecting portion (31) has a fourth extension portion (314) extending in the first direction (x) relative to the at least one second extension portion (312), and the fourth extension portion (314) is spaced apart in the second direction (y) relative to the second main portion (311). Appendix 8. The semiconductor device (A18, A19, A20) according to Appendix 6, wherein the at least one third extension (313) has two third extensions (313) that extend from the second main portion (311) to both sides (y1 side and y2 side) in the second direction (y).Note 9. The semiconductor device (A14, A16, A19, A20) described in Note 6, wherein the first connecting portion (22) has at least one fifth extension portion (223) extending in the second direction (y) relative to the first main portion (221), and the at least one fifth extension portion (223) overlaps the at least one third extension portion (313) when viewed in the thickness direction (z). Note 10. The at least one first extension portion (222) has two first extension portions (222) extending on both sides (y1 side and y2 side) of the second direction (y) relative to the first main portion (221), and the at least one fifth extension portion (223) has two fifth extension portions (223) extending on both sides (y1 side and y2 side) of the second direction (y) relative to the first main portion (221), The semiconductor device (A19, A20) according to Appendix 9, wherein the at least one second extension (312) has two second extensions (312) that extend to both sides (y1 side and y2 side) of the second direction (y) relative to the second main part (311), and the at least one third extension (313) has two third extensions (313) that extend to both sides (y1 side and y2 side) of the second direction (y) relative to the second main part (311). Appendix 11. The semiconductor device (A20) according to Appendix 10, wherein the second connecting part (31) has a fourth extension (314) that is connected to both the at least one second extension (312) and the at least one third extension (313), and the fourth extension (314) is separated from the second main part (311) in the second direction (y). Note 12. The distance (D1) between the at least one first extension (222) and the at least one fifth extension (223) in the first direction (x) is 30% or more and 120% or less of the length (L3) of the at least one first extension (222) in the first direction (x), according to any one of Notes 9 to 11 (A14, A19, A20).Note 13. The semiconductor device (A18, A19, A20) according to Note 3, wherein the second connecting portion (31) has two third extensions (313) that extend from the second main portion (311) to both sides (y1 side and y2 side) in the second direction (y), and the two third extensions (313) are spaced apart in the first direction (x) from the at least one second extension (312). Note 14. The semiconductor device (A18, A20) according to Note 13, wherein the second connecting portion (31) has a fourth extension (314) that is connected to both the at least one second extension (312) and the two third extensions (313), and the fourth extension (314) is spaced apart in the second direction (y) from the second main portion (311). Note 15. The semiconductor device (A10, A11, A12, A13, A14, A15, A16, A17, A18, A19, A20) according to any one of Appendix 1 to 14, wherein the constituent material of the first conductive member (2) and the constituent material of the second conductive member (3) contains copper. Appendix 16. The semiconductor device (A10, A11, A12, A13, A14, A15, A16, A17, A18, A19, A20) according to any one of Appendix 1 to 15, wherein the semiconductor element (1) has a second electrode (12) disposed on the other side (z2 side) of the thickness direction (z) of the semiconductor layer (10), and further comprises a third conductive member (4) located on the other side (z2 side) of the thickness direction (z) with respect to the semiconductor element (1) and electrically bonded to the second electrode (12). Appendix 17. The semiconductor device (A10, A11, A12, A13, A14, A15, A16, A17, A18, A19, A20) described in Appendix 16, wherein the semiconductor element (1) has a third electrode (13) disposed on one side (z1 side) of the semiconductor layer (10) in the thickness direction (z), and further comprises a fourth conductive member (5) electrically bonded to the third electrode (13).Note 18. The semiconductor device (A10, A11, A12, A13, A14, A15, A16, A17, A18, A19, A20) described in Note 17 further comprises a fifth conductive member (6) which is conductive to the fourth conductive member (5), wherein the fifth conductive member (6) is separated from the semiconductor element (1) on one side (x1 side) in the first direction (x) and is located on the other side (z2 side) in the thickness direction (z) relative to the fourth conductive member (5). Note 19. The semiconductor device (A10, A11, A12, A13, A14, A15, A16, A17, A18, A19, A20) according to Appendix 17 or 18, wherein the semiconductor element (1) is a switching element having a drain electrode, a source electrode, and a gate electrode, the first electrode (11) is the gate electrode, the second electrode (12) is the drain electrode, and the third electrode (13) is the source electrode. Appendix 20. The semiconductor device according to any one of Appendix 1 to 19, wherein the constituent material of the first junction layer (29) includes solder.

[0125] A10-A20: Semiconductor device, 1: Semiconductor element, 10: Semiconductor layer, 102: Second surface of the element, 11: First electrode (gate electrode), 12: Second electrode (drain electrode), 13: Third electrode (source electrode), 19: Conductive bonding material, 2: First conductive member, 21: Pad portion, 22: First connection portion, 221: First main portion, 222: First extension portion, 223: Fifth extension portion, 28: Conductive bonding material, 29: First bonding layer, 3: Second conductive member, 31: Second connection portion, 311: Second main portion, 312: Second extension portion, 313: Third extension portion, 314: Fourth extension portion 32: Terminal portion, 4: Third conductive member, 401: Main surface, 402: Back surface, 41: Island portion, 42: Terminal portion, 43: Thin-walled extension portion, 44: Thick-walled extension portion, 5: Fourth conductive member, 51: Pad portion, 52: Connection portion, 59: Conductive bonding material, 6: Fifth conductive member, 61: Connection portion, 62: Terminal portion, 63: Thin-walled extension portion, 7: Sealing resin, 71: First resin surface, 72: Second resin surface, 73: Third resin surface, 74: Fourth resin surface, 75: Fifth resin surface, 76: Sixth resin surface, 9: Lead frame, L1, L2, L3, L4: Length, D1: Spacing

Claims

1. A semiconductor device comprising: a semiconductor element having a semiconductor layer and a first electrode disposed on one side of the thickness direction of the semiconductor layer; a first conductive member having a first connecting portion that is conductive to the first electrode and is separated from the first electrode on one side of a first direction intersecting the thickness direction; a second conductive member having a second connecting portion that is conductive to the first conductive member and is located on the other side of the thickness direction relative to the first connecting portion; and a first bonding layer interposed between the first connecting portion and the second connecting portion and bonded to the first connecting portion and the second connecting portion, wherein the first connecting portion has a first main portion and at least one first extending portion that extends from the first main portion in the thickness direction and in a second direction intersecting the first direction, and the first main portion and the at least one first extending portion overlap the second connecting portion when viewed in the thickness direction.

2. The semiconductor device according to claim 1, wherein the second connecting portion comprises a second main portion and at least one second extension portion extending in the second direction relative to the second main portion, the first main portion overlapping the second main portion when viewed in the thickness direction, and the at least one first extension portion overlapping the at least one second extension portion when viewed in the thickness direction.

3. The semiconductor device according to claim 2, wherein the at least one first extension portion has two first extension portions extending to both sides in the second direction relative to the first main portion, and the at least one second extension portion has two second extension portions extending to both sides in the second direction relative to the second main portion.

4. The semiconductor device according to claim 2 or 3, wherein the length of the first main portion in the second direction is 50% or more and 120% or less of the length of the second main portion in the second direction.

5. The semiconductor device according to any one of claims 2 to 4, wherein the length of the at least one first extension in the first direction is 50% or more and 120% or less of the length of the at least one second extension in the first direction.

6. The semiconductor device according to any one of claims 2 to 5, wherein the second connecting portion has at least one third extension portion extending in the second direction relative to the second main portion, and the at least one third extension portion is spaced apart in the first direction relative to the at least one second extension portion.

7. The semiconductor device according to claim 3, wherein the second connecting portion has a fourth extension portion that extends in the first direction relative to the at least one second extension portion, and the fourth extension portion is spaced apart in the second direction relative to the second main portion.

8. The semiconductor device according to claim 6, wherein the at least one third extension portion has two third extension portions that extend to both sides in the second direction relative to the second main portion.

9. The semiconductor device according to claim 6, wherein the first connecting portion has at least one fifth extension portion extending in the second direction relative to the first main portion, and the at least one fifth extension portion overlaps the at least one third extension portion when viewed in the thickness direction.

10. The semiconductor device according to claim 9, wherein the at least one first extension portion has two first extension portions extending to both sides in the second direction relative to the first main portion, the at least one fifth extension portion has two fifth extension portions extending to both sides in the second direction relative to the first main portion, the at least one second extension portion has two second extension portions extending to both sides in the second direction relative to the second main portion, and the at least one third extension portion has two third extension portions extending to both sides in the second direction relative to the second main portion.

11. The semiconductor device according to claim 10, wherein the second connecting portion has a fourth extension portion connected to both the at least one second extension portion and the at least one third extension portion, and the fourth extension portion is spaced apart from the second main portion in the second direction.

12. The semiconductor device according to any one of claims 9 to 11, wherein the distance between the at least one first extension and the at least one fifth extension in the first direction is 30% or more and 120% or less of the length of the at least one first extension in the first direction.

13. The semiconductor device according to claim 3, wherein the second connecting portion has two third extensions that extend to both sides in the second direction relative to the second main portion, and the two third extensions are spaced apart in the first direction relative to at least one second extension.

14. The semiconductor device according to claim 13, wherein the second connecting portion has a fourth extension portion connected to both the at least one second extension portion and the two third extension portions, and the fourth extension portion is spaced apart from the second main portion in the second direction.

15. The semiconductor device according to any one of claims 1 to 14, wherein the constituent material of the first conductive member and the constituent material of the second conductive member include copper.

16. The semiconductor device according to any one of claims 1 to 15, wherein the semiconductor element has a second electrode disposed on the other side of the thickness direction of the semiconductor layer, and further comprises a third conductive member located on the other side of the thickness direction with respect to the semiconductor element and electrically connected to the second electrode.

17. The semiconductor device according to claim 16, wherein the semiconductor element has a third electrode disposed on one side of the semiconductor layer in the thickness direction, and further comprises a fourth conductive member electrically bonded to the third electrode.

18. The semiconductor device according to claim 17, further comprising a fifth conductive member that is conductive to the fourth conductive member, wherein the fifth conductive member is spaced apart from the semiconductor element on one side in the first direction and located on the other side in the thickness direction relative to the fourth conductive member.

19. The semiconductor device according to claim 17 or 18, wherein the semiconductor element is a switching element having a drain electrode, a source electrode, and an electrode, the first electrode being the electrode, the second electrode being the drain electrode, and the third electrode being the source electrode.

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