Semiconductor device

Abstract

This semiconductor device comprises: a die pad having a mounting surface; a first metal layer covering a portion of the mounting surface; a semiconductor element bonded to the first metal layer; and a sealing resin covering a portion of the die pad and the semiconductor element. The mounting surface faces a first direction. The mounting surface includes a first region surrounding the first metal layer when viewed in the first direction. The sealing resin is in contact with the first region. The bonding force of the sealing resin to the first region is greater than the bonding force of the sealing resin to the first metal layer.

Description

Semiconductor device

[0001] The present disclosure relates to a semiconductor device.

[0002] Patent Document 1 discloses an example of a semiconductor device including a die pad, an interior plating layer covering the entire one side in the thickness direction of the die pad, a semiconductor element joined to the interior plating layer, and a sealing resin covering the semiconductor element. The interior plating layer contains silver. By including the interior plating layer in the semiconductor device, when mounting the semiconductor element on the die pad, the impact acting on the die pad can be mitigated.

[0003] However, in the configuration of the semiconductor device disclosed in Patent Document 1, it has been confirmed by a temperature cycle test that peeling is more likely to occur at the interface between the interior plating layer and the sealing resin than at the interface between the die pad and the sealing resin. When the peeling at the interface between the interior plating layer and the sealing resin spreads, there is a risk of cracks occurring in the bonding layer that joins the interior plating layer and the semiconductor element.

[0004] Japanese Unexamined Patent Application Publication No. 2016 - 162773

[0005] [Summary] One problem of the present disclosure is to provide a semiconductor device that has been improved from the prior art. In particular, in view of the above circumstances, one problem of the present disclosure is to provide a semiconductor device capable of mitigating the impact on a conduction member while suppressing the peeling of the sealing resin from the conduction member.

[0006] The semiconductor device provided by the first aspect of the present disclosure includes a die pad having a mounting surface facing one side in a first direction, a first metal layer covering a part of the mounting surface, a semiconductor element joined to the first metal layer, and a sealing resin covering a part of the die pad and the semiconductor element. The mounting surface includes a first region surrounding the first metal layer when viewed in the first direction. The sealing resin is in contact with the first region. The bonding force of the sealing resin with respect to the first region is greater than the bonding force of the sealing resin with respect to the first metal layer.

[0007] A semiconductor device provided by a second aspect of this disclosure comprises a terminal having a connection surface facing one side in a first direction, a semiconductor element conductive to the terminal, a metal layer covering a portion of the connection surface, a conductive member electrically bonded to the semiconductor element and the metal layer, and a sealing resin covering a portion of the terminal, the semiconductor element, and the conductive member. The connection surface includes a region surrounding the metal layer when viewed in the first direction. The sealing resin is in contact with the region. The bonding force of the sealing resin to the region is greater than the bonding force of the sealing resin to the metal layer.

[0008] Other features and advantages of this disclosure will become more apparent from the detailed description below, based on the accompanying drawings.

[0009] Figure 1 is a perspective view of a semiconductor device according to the first embodiment of the present disclosure. Figure 2 is a plan view of the semiconductor device shown in Figure 1, with the sealing resin transparent. Figure 3 is a bottom view of the semiconductor device shown in Figure 1. Figure 4 is a right side view of the semiconductor device shown in Figure 1. Figure 5 is a rear view of the semiconductor device shown in Figure 1. Figure 6 is a cross-sectional view along the line VI-VI in Figure 2. Figure 7 is a cross-sectional view along the line VII-VII in Figure 2. Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 2. Figure 9 is a cross-sectional view along the line IX-IX in Figure 2. Figure 10 is a partially enlarged view of Figure 6, showing the die pad and its vicinity. Figure 11 is a partially enlarged view of Figure 6, showing the first conductive member and its vicinity. Figure 12 is a plan view of a semiconductor device according to the second embodiment of the present disclosure, with the sealing resin transparent. Figure 13 is a cross-sectional view along the line XIII-XIII in Figure 12. Figure 14 is a plan view of a semiconductor device according to the third embodiment of the present disclosure, with the sealing resin transparent. Figure 15 is a cross-sectional view taken along the line XV-XV in Figure 14.

[0010] [Detailed Explanation] Details of this disclosure will be explained with reference to the attached drawings.

[0011] First Embodiment: A semiconductor device A10 according to the first embodiment of the present disclosure will be described based on Figures 2 to 9. The semiconductor device A10 is used in electronic devices equipped with a power conversion circuit, such as a DC-DC converter. The semiconductor device A10 comprises a semiconductor element 10, a first junction layer 19, a die pad 20, a first terminal 21, a second terminal 22, a first conductive member 31, a second conductive member 32, a second junction layer 36, a third junction layer 37, a first metal layer 41, a second metal layer 42, a third metal layer 43, and a sealing resin 50. Here, for ease of understanding, Figure 2 shows the sealing resin 50 being transparent. In Figure 2, the transparent sealing resin 50 is shown by dashed lines.

[0012] In describing the semiconductor device A10, for convenience, the direction normal to the mounting surface 201 of the die pad 20, which will be described later, will be referred to as the "first direction z". The direction perpendicular to the first direction z will be referred to as the "second direction x". The direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y".

[0013] As shown in Figures 2 and 6 to 8, the semiconductor element 10 is mounted on a die pad 20. The semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In addition, the semiconductor element 10 may be other switching elements such as an IGBT (Insulated Gate Bipolar Transistor). Furthermore, the semiconductor element 10 may be various diodes or various ICs. In the description of the semiconductor device A10, the semiconductor element 10 is an n-channel type MOSFET with a vertical structure. The semiconductor element 10 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC). As shown in Figures 2 and 6 to 8, the semiconductor element 10 has a first electrode 11, a second electrode 12, and a control electrode 13.

[0014] As shown in Figures 6 to 8, the first electrode 11 faces the first metal layer 41 in the first direction z. In the semiconductor device 10, current flows from the first electrode 11 towards the interior of the semiconductor device 10. In other words, the first electrode 11 corresponds to the drain of the semiconductor device 10.

[0015] As shown in Figures 6 to 8, the second electrode 12 is located on the opposite side from the first electrode 11 in the first direction z. In the semiconductor element 10, current flows from the inside of the semiconductor element 10 toward the second electrode 12. In other words, the second electrode 12 corresponds to the source of the semiconductor element 10.

[0016] As shown in Figures 2 and 7, the control electrode 13 is located on the same side as the second electrode 12 in the first direction z. A gate voltage is applied to the control electrode 13 to drive the semiconductor element 10. In the semiconductor element 10, when the gate voltage is applied to the control electrode 13, a current flows from the first electrode 11 to the second electrode 12. In the first direction z, the area of ​​the control electrode 13 is smaller than the area of ​​the second electrode 12.

[0017] The die pad 20, the first terminal 21, and the second terminal 22, together with the first conductive member 31, form a conductive path of the semiconductor device A10. The die pad 20, the first terminal 21, and the second terminal 22 are made from the same lead frame. This lead frame contains copper (Cu) or a copper alloy. Therefore, the composition of each of the die pad 20, the first terminal 21, and the second terminal 22 includes copper.

[0018] As shown in Figure 2, the die pad 20 is located next to the first terminal 21 and the second terminal 22 in the third direction y. The die pad 20 is electrically connected to the first electrode 11 of the semiconductor element 10. Therefore, the die pad 20 forms the drain terminal of the semiconductor device A 10. As shown in Figures 2 and 3, the die pad 20 has a mounting surface 201, a back surface 202, a plurality of first end surfaces 203, and a first protrusion 204.

[0019] As shown in Figures 6 to 8, the mounting surface 201 faces one side in the first direction z. A semiconductor element 10 is mounted on the mounting surface 201.

[0020] As shown in Figures 6 to 8, the back surface 202 faces away from the mounting surface 201 in the first direction z. As shown in Figure 3, the back surface 202 is exposed from the sealing resin 50. Viewed in the first direction z, the back surface 202 overlaps the semiconductor element 10. A plating layer containing tin (Sn) or the like may be provided on the back surface 202.

[0021] As shown in Figures 2 and 3, each of the multiple first end faces 203 faces one side in the third direction y. Each of the multiple first end faces 203 is connected to the mounting surface 201 and the back surface 202. The multiple first end faces 203 are arranged along the second direction x. As shown in Figure 7, each of the multiple first end faces 203 is exposed from the sealing resin 50.

[0022] As shown in Figures 3 and 6 to 8, the first protruding portion 204 extends from the back surface 202 in a direction perpendicular to the first direction z when viewed in the first direction z. The first protruding portion 204 includes a part of the mounting surface 201.

[0023] As shown in Figure 8, the first protruding portion 204 includes an intermediate surface 204A and a pair of exposed surfaces 204B. The intermediate surface 204A faces away from the mounting surface 201 in the first direction z. The intermediate surface 204A is located between the mounting surface 201 and the back surface 202 in the first direction z. The intermediate surface 204A is in contact with the sealing resin 50. The pair of exposed surfaces 204B face away from each other in the second direction x. Each of the pair of exposed surfaces 204B is connected to the mounting surface 201 and the intermediate surface 204A. As shown in Figures 5 and 8, each of the pair of exposed surfaces 204B is exposed from the sealing resin 50. The area of ​​each of the pair of exposed surfaces 204B is smaller than the area of ​​each of the plurality of first end surfaces 203.

[0024] As shown in Figure 2, the first terminal 21 is located on one side of the die pad 20 in the third direction y. The first terminal 21 is electrically connected to the second electrode 12 of the semiconductor element 10 via the first conductive member 31. Therefore, the first terminal 21 constitutes the source terminal of the semiconductor device A 10. As shown in Figures 2 and 3, the first terminal 21 has a first connection surface 211, a first mounting surface 212, a plurality of second end surfaces 213, and a second protrusion 214.

[0025] As shown in Figure 6, the first connection surface 211 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z.

[0026] As shown in Figures 6 and 9, the first mounting surface 212 faces away from the first connection surface 211 in the first direction z. As shown in Figure 3, the first mounting surface 212 is exposed from the sealing resin 50. A plating layer containing tin or the like may be provided on the first mounting surface 212.

[0027] As shown in Figures 2 and 3, each of the multiple second end faces 213 faces away from each of the multiple first end faces 203 in the third direction y. The multiple second end faces 213 connect to the first connection surface 211 and the first mounting surface 212. The multiple second end faces 213 are arranged along the second direction x. As shown in Figures 4 and 6, each of the multiple second end faces 213 is exposed from the sealing resin 50.

[0028] As shown in Figures 3, 6, and 9, the second protrusion 214 extends from the first mounting surface 212 in a direction perpendicular to the first direction z when viewed in the first direction z. The second protrusion 214 includes a portion of the first connection surface 211.

[0029] As shown in Figure 9, the second protruding portion 214 includes an intermediate surface 214A and an exposed surface 214B. The intermediate surface 214A faces away from the first connecting surface 211 in the first direction z. The intermediate surface 214A is located between the first connecting surface 211 and the first mounting surface 212 in the first direction z. The intermediate surface 214A is in contact with the sealing resin 50. The exposed surface 214B connects to the first connecting surface 211 and the intermediate surface 214A and faces one side in the second direction x. The exposed surface 214B is exposed from the sealing resin 50. The area of ​​the exposed surface 214B is smaller than the area of ​​each of the plurality of second end surfaces 213.

[0030] As shown in Figures 2 and 3, the second terminal 22 is located next to the first terminal 21 in the second direction x. The second terminal 22 is electrically connected to the control electrode 13 of the semiconductor element 10. Therefore, the second terminal 22 forms the gate terminal of the semiconductor device A 10. As shown in Figures 2 and 3, the second terminal 22 has a second connection surface 221, a second mounting surface 222, a third end surface 223, and a third protrusion 224.

[0031] As shown in Figure 7, the second connection surface 221 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z. The position of the second connection surface 221 in the first direction z is equal to the position of the first connection surface 211 of the first terminal 21 in the first direction z. A plating layer containing nickel or silver may be provided on the second connection surface 221.

[0032] As shown in Figure 3, the second mounting surface 222 faces away from the second connection surface 221 in the first direction z. As shown in Figure 3, the second mounting surface 222 is exposed from the sealing resin 50. A plating layer containing tin or the like may be provided on the second mounting surface 222.

[0033] As shown in Figures 2 and 3, the third end face 223 faces the same side as each of the multiple second end faces 213 of the first terminal 21 in the third direction y. The third end face 223 is connected to the second connection surface 221 and the second mounting surface 222. As shown in Figures 4 and 7, the third end face 223 is exposed from the sealing resin 50.

[0034] As shown in Figures 3, 7, and 9, the third protrusion 224 extends from the second mounting surface 222 in a direction perpendicular to the first direction z when viewed in the first direction z. A portion of the second connection surface 221 is included in the third protrusion 224.

[0035] As shown in Figure 9, the third protruding portion 224 includes an intermediate surface 224A and an exposed surface 224B. The intermediate surface 224A faces away from the second connection surface 221 in the first direction z. The intermediate surface 224A is located between the second connection surface 221 and the second mounting surface 222 in the first direction z. The intermediate surface 224A is in contact with the sealing resin 50. The exposed surface 224B connects to the second connection surface 221 and the intermediate surface 224A and faces the second direction x. As shown in Figures 2 and 9, the exposed surface 224B faces away from the side that the exposed surface 214B of the first terminal 21 faces in the second direction x. As shown in Figures 5 and 9, the exposed surface 224B is exposed from the sealing resin 50. The area of ​​the exposed surface 224B is smaller than the area of ​​the third end surface 223.

[0036] As shown in Figures 2 and 6 to 8, the first metal layer 41 covers a portion of the mounting surface 201 of the die pad 20. The first metal layer 41 contains silver (Ag). In addition, the first metal layer 41 may also contain nickel (Ni).

[0037] As shown in Figure 2, the mounting surface 201 of the die pad 20 includes a first region 201A that surrounds the first metal layer 41 when viewed in a first direction z. That is, the first region 201A is exposed from the first metal layer 41. As shown in Figures 6 to 8, the sealing resin 50 is in contact with the first region 201A. The bonding force of the sealing resin 50 to the first region 201A is greater than the bonding force of the sealing resin 50 to the first metal layer 41. As shown in Figure 10, the surface roughness of the first region 201A is greater than the surface roughness of the back surface 202 of the die pad 20.

[0038] As shown in Figures 2, 6, and 9, the second metal layer 42 covers a portion of the first connection surface 211 of the first terminal 21. The metal elements contained in the second metal layer 42 are the same as those contained in the first metal layer 41. Therefore, the second metal layer 42 contains silver or nickel.

[0039] As shown in Figure 2, the first connection surface 211 of the first terminal 21 includes a second region 211A that surrounds the second metal layer 42 when viewed in the first direction z. That is, the second region 211A is exposed from the second metal layer 42. When viewed in the first direction z, a portion of the second region 211A is located between the second metal layer 42 and the first region 201A of the die pad 20. As shown in Figures 6 and 9, the sealing resin 50 is in contact with the second region 211A. The bonding force of the sealing resin 50 to the second region 211A is greater than the bonding force of the sealing resin 50 to the second metal layer 42.

[0040] As shown in Figures 2, 7, and 9, the third metal layer 43 covers a portion of the second connection surface 221 of the second terminal 22. The metal elements contained in the third metal layer 43 are the same as those contained in the first metal layer 41. Therefore, the third metal layer 43 contains silver or nickel.

[0041] As shown in FIG. 2, the second connection surface 221 of the second terminal 22 includes a third region 221A that surrounds the third metal layer 43 when viewed in the first direction z. That is, the third region 221A is exposed from the third metal layer 43. As shown in FIGS. 7 and 9, the encapsulating resin 50 is in contact with the third region 221A. The bonding force of the encapsulating resin 50 with respect to the third region 221A is greater than the bonding force of the encapsulating resin 50 with respect to the third metal layer 43.

[0042] As shown in FIGS. 6 to 8, the first bonding layer 19 bonds the first metal layer 41 and the semiconductor element 10. In the semiconductor device A10, the first bonding layer 19 has conductivity. The first bonding layer 19 electrically bonds the first metal layer 41 and the first electrode 11 of the semiconductor element 10. Thereby, the die pad 20 is electrically connected to the first electrode 11. The first bonding layer 19 is away from the first region 201A of the die pad 20. As shown in FIG. 2, when viewed in the first direction z, the first bonding layer 19 is located inward of the periphery of the first metal layer 41. The first bonding layer 19 is solder. Alternatively, the first bonding layer 19 may be a sintered body of metal particles. The metal particles include, for example, silver.

[0043] In addition to the above, when the semiconductor element 10 is various ICs, the presence or absence of the conductivity of the first bonding layer 19 is not a problem. In this case, examples of the material of the first bonding layer 19 include a resin paste containing silver.

[0044] The first conductive member 31 is electrically bonded to the second electrode 12 of the semiconductor element 10 and the second metal layer 42. Thereby, the first terminal 21 is electrically connected to the second electrode 12. The composition of the first conductive member 31 includes copper. In the semiconductor device A10, the first conductive member 31 is a metal clip. As shown in FIGS. 2 and 6, the first conductive member 31 straddles between the first terminal 21 and the die pad 20. When viewed in the first direction z, the first conductive member 31 is away from the control electrode 13 of the semiconductor element 10. The first conductive member 31 has a first joint portion 311, a second joint portion 312, and an intermediate portion 313.

[0045] As shown in FIGS. 6 and 8, the first joint portion 311 faces the second electrode 12 of the semiconductor element 10 in the first direction z. The first joint portion 311 has a first surface 311A and a second surface 311B. The first surface 311A and the second surface 311B face opposite sides in the first direction z. The first surface 311A is conductively joined to the second electrode 12. The second surface 311B is covered with the sealing resin 50. As shown in FIG. 11, the surface roughness of the second surface 311B is greater than that of the first surface 311A.

[0046] As shown in FIG. 6, the second joint portion 312 faces the second metal layer 42 in the first direction z. The second joint portion 312 stands upright in the first direction z. The second joint portion 312 has a third surface 312A facing the second metal layer 42. The third surface 312A is in contact with the second metal layer 42.

[0047] As shown in FIGS. 2 and 6, the intermediate portion 313 is located between the first joint portion 311 and the second joint portion 312 in the third direction y. The intermediate portion 313 connects the first joint portion 311 and the second joint portion 312. The intermediate portion 313 straddles between the first terminal 21 and the die pad 20.

[0048] As shown in FIGS. 2 and 6, the second bonding layer 36 conductively joins the second metal layer 42 and the second joint portion 312 of the first conductive member 31. When viewed in the first direction z, the second bonding layer 36 surrounds the third surface 312A of the second joint portion 312. The second bonding layer 36 is away from the second region 211A of the first terminal 21. The second bonding layer 36 is solder.

[0049] As shown in FIGS. 6 and 8, the third bonding layer 37 conductively joins the second electrode 12 of the semiconductor element 10 and the first surface 311A of the first joint portion 311 of the first conductive member 31. The third bonding layer 37 is solder. Therefore, the metal elements included in the third bonding layer 37 are the same as the metal elements included in the second bonding layer 36.

[0050] As shown in Figures 2 and 7, the second conductive member 32 is electrically bonded to the control electrode 13 of the semiconductor element 10 and the third metal layer 43. As a result, the second terminal 22 is electrically connected to the control electrode 13. The composition of the second conductive member 32 includes gold (Au). In addition, the composition of the second conductive member 32 may include aluminum (Al) or copper.

[0051] As shown in Figures 6 to 9, the sealing resin 50 covers the semiconductor element 10, the first conductive member 31, and the second conductive member 32. Furthermore, the sealing resin 50 covers a portion of each of the die pad 20, the first terminal 21, and the second terminal 22. The sealing resin 50 has electrical insulating properties. The sealing resin 50 is made of a material including, for example, a black epoxy resin. The sealing resin 50 has a top surface 51, a bottom surface 52, a first side surface 53, a second side surface 54, a third side surface 55, a fourth side surface 56, and a pair of fifth side surfaces 57.

[0052] As shown in Figures 6 to 8, the top surface 51 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z. The bottom surface 52 faces the opposite side from the top surface 51 in the first direction z. As shown in Figure 3, the back surface 202 of the die pad 20, the first mounting surface 212 of the first terminal 21, and the second mounting surface 222 of the second terminal 22 are exposed from the bottom surface 52.

[0053] As shown in Figures 3 and 5 to 7, the first side surface 53 faces one side in the third direction y. The first side surface 53 is connected to the bottom surface 52. As shown in Figure 4, each of the multiple second end faces 213 of the first terminal 21 and the third end face 223 of the second terminal 22 are exposed from the first side surface 53.

[0054] As shown in Figures 3 and 5-7, the second side surface 54 faces the same side as the first side surface 53 in the third direction y. In the first direction z, the second side surface 54 is located on the opposite side from the bottom surface 52 with respect to the first side surface 53. The second side surface 54 is connected to the top surface 51. Viewed in the first direction z, the second side surface 54 is located outward from the first side surface 53.

[0055] As shown in Figures 3 and 5 to 7, the third side surface 55 faces the opposite direction from the first side surface 53 in the third direction y. The third side surface 55 is connected to the bottom surface 52. Each of the multiple first end faces 203 of the die pad 20 is exposed from the third side surface 55.

[0056] As shown in Figures 3 and 5-7, the fourth side surface 56 faces the same side as the third side surface 55 in the third direction y. In the first direction z, the fourth side surface 56 is located on the opposite side from the bottom surface 52 with respect to the third side surface 55. The fourth side surface 56 is connected to the top surface 51. Viewed in the first direction z, the fourth side surface 56 is located outward from the third side surface 55.

[0057] As shown in Figures 3, 4, 8, and 9, the pair of fifth sides 57 face opposite each other in the second direction x. Each of the pair of fifth sides 57 is connected to the top surface 51 and the bottom surface 52. A pair of exposed surfaces 204B of the die pad 20 are individually exposed from the pair of fifth sides 57. The exposed surface 214B of the first terminal 21 is exposed from one of the pair of fifth sides 57. The exposed surface 224B of the second terminal 22 is exposed from the other of the pair of fifth sides 57. Each of the pair of exposed surfaces 204B, exposed surface 214B, and exposed surface 224B is flush with any of the pair of fifth sides 57.

[0058] Next, the effects and benefits of semiconductor device A10 will be explained.

[0059] The semiconductor device A10 comprises a die pad 20, a first metal layer 41, a semiconductor element 10, and a sealing resin 50. The semiconductor element 10 is bonded to the first metal layer 41. The mounting surface 201 of the die pad 20 includes a first region 201A that surrounds the first metal layer 41 when viewed in a first direction z. The sealing resin 50 is in contact with the first region 201A. The bonding force of the sealing resin 50 to the first region 201A is greater than the bonding force of the sealing resin 50 to the first metal layer 41. By adopting this configuration, the impact on the die pad 20 can be mitigated when mounting the semiconductor element 10 on the die pad 20. At the same time, delamination at the interface between the die pad 20 and the sealing resin 50 can be suppressed. Therefore, with this configuration, the semiconductor device A10 can mitigate the impact on the die pad 20 while suppressing the delamination of the sealing resin 50 from the die pad 20.

[0060] The semiconductor device A10 further comprises a first bonding layer 19 that bonds the first metal layer 41 to the semiconductor element 10. The first metal layer 41 prevents excessive wetting of the first bonding layer 19. As a result, the first bonding layer 19 is separated from the first region 201A of the die pad 20, and thus delamination at the interface between the die pad 20 and the sealing resin 50 can be effectively suppressed.

[0061] The die pad 20 has a back surface 202 that faces away from the mounting surface 201 in the first direction z. The back surface 202 is exposed from the sealing resin 50. This improves the heat dissipation of the semiconductor device A10.

[0062] The surface roughness of the first region 201A of the die pad 20 is greater than the surface roughness of the back surface 202 of the die pad 20. By adopting this configuration, the sealing resin 50 exhibits an anchoring effect with respect to the die pad 20. This makes it possible to more effectively suppress delamination at the interface between the die pad 20 and the sealing resin 50.

[0063] The semiconductor device A10 further comprises a first terminal 21, a second metal layer 42, and a first conductive member 31. The first conductive member 31 is electrically bonded to the second metal layer 42. The first connection surface 211 of the first terminal 21 includes a second region 211A. The second region 211A includes a portion located between the second metal layer 42 and the first region 201A of the die pad 20 when viewed in the first direction z. The sealing resin 50 is in contact with the second region 211A. The bonding force of the sealing resin 50 to the second region 211A is greater than the bonding force of the sealing resin 50 to the first metal layer 41. By adopting this configuration, the impact on the first terminal 21 can be mitigated when electrically connecting the first conductive member 31 to the first terminal 21. In addition, delamination at the interface between the first terminal 21 and the sealing resin 50 can be suppressed.

[0064] The semiconductor device A10 further includes a second bonding layer 36 that electrically bonds the second metal layer 42 and the first conductive member 31. The second metal layer 42 can suppress excessive wetting of the second bonding layer 36. This prevents the first conductive member 31 from rotating around the first direction z when it is electrically connected to the first terminal 21.

[0065] Viewed in the first direction z, the second region 211A of the first terminal 21 surrounds the second metal layer 42. By adopting this configuration, excessive wetting of the second bonding layer 36 can be suppressed more effectively.

[0066] The first conductive member 31 has a first surface 311A ​​and a second surface 311B. The first surface 311A ​​is electrically bonded to the semiconductor element 10. The second surface 311B is covered with a sealing resin 50. The surface roughness of the second surface 311B is greater than that of the first surface 311A. With this configuration, the sealing resin 50 exhibits an anchoring effect with respect to the first conductive member 31. This effectively suppresses delamination at the interface between the first conductive member 31 and the sealing resin 50.

[0067] The first conductive member 31 is a metal clip containing copper. This allows for a further reduction in the electrical resistance of the first conductive member 31 compared to a wire containing aluminum. This makes it possible to pass a larger current through the semiconductor element 10.

[0068] The first terminal 21 has a second end face 213 that faces in a direction perpendicular to the first direction z. The second end face 213 is exposed from the sealing resin 50. With this configuration, when the semiconductor device A10 is mounted on the wiring board, the molten solder creeps up the second end face 213. This forms a solder fillet that covers the second end face 213. Therefore, the mounting strength of the semiconductor device A10 on the wiring board can be improved.

[0069] The semiconductor device A10 further comprises a second terminal 22, a third metal layer 43, and a second conductive member 32. The second conductive member 32 is electrically bonded to the third metal layer 43. The second connection surface 221 of the second terminal 22 includes a third region 221A that surrounds the third metal layer 43 when viewed in the first direction z. The sealing resin 50 is in contact with the third region 221A. The bonding force of the sealing resin 50 to the third region 221A is greater than the bonding force of the sealing resin 50 to the third metal layer 43. By adopting this configuration, the impact on the second terminal 22 can be mitigated when electrically connecting the second conductive member 32 to the second terminal 22. In addition, delamination at the interface between the second terminal 22 and the sealing resin 50 can be suppressed. This prevents disconnection of the second conductive member 32 caused by the extension of delamination of the sealing resin 50 from the second terminal 22.

[0070] Second Embodiment: A semiconductor device A20 according to the second embodiment of the present disclosure will be described with reference to Figures 12 and 13. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 12 shows the sealing resin 50 being transparent. In Figure 12, the transparent sealing resin 50 is shown by dashed lines.

[0071] The configuration of the first conductive member 31 in semiconductor device A20 differs from that of semiconductor device A10.

[0072] As shown in Figures 12 and 13, the first conductive member 31 is a plurality of wires. One end of each of the plurality of wires is in contact with the second electrode 12 of the semiconductor element 10. The other end of each of the plurality of wires is in contact with the second metal layer 42. Therefore, the semiconductor device A20 does not have a second bonding layer 36 and a third bonding layer 37. The composition of the first conductive member 31 includes aluminum. In addition, the composition of the second conductive member 32 may include copper.

[0073] Next, the effects and benefits of semiconductor device A20 will be explained.

[0074] The semiconductor device A20 comprises a die pad 20, a first metal layer 41, a semiconductor element 10, and a sealing resin 50. The semiconductor element 10 is bonded to the first metal layer 41. The mounting surface 201 of the die pad 20 includes a first region 201A that surrounds the first metal layer 41 when viewed in a first direction z. The sealing resin 50 is in contact with the first region 201A. The bonding force of the sealing resin 50 to the first region 201A is greater than the bonding force of the sealing resin 50 to the first metal layer 41. Therefore, with this configuration, it is possible to suppress the peeling of the sealing resin 50 from the die pad 20 while mitigating the impact on the die pad 20, even in the semiconductor device A20. Furthermore, by having the same configuration as the semiconductor device A10, the semiconductor device A20 also exhibits the effects related to the said configuration.

[0075] Third Embodiment: A semiconductor device A30 according to the third embodiment of the present disclosure will be described with reference to Figures 14 and 15. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 14 shows the sealing resin 50 being transparent. In Figure 14, the transparent sealing resin 50 is shown by dashed lines.

[0076] The configuration of the second conductive member 32 in semiconductor device A30 differs from that of semiconductor device A10.

[0077] As shown in Figures 14 and 15, the second conductive member 32 is a metal lead. The composition of the second conductive member 32 includes copper. The semiconductor device A30 further comprises a fourth bonding layer 38 and a fifth bonding layer 39. The fourth bonding layer 38 conductively bonds the third metal layer 43 and the second conductive member 32. The fifth bonding layer 39 conductively bonds the control electrode 13 of the semiconductor element 10 and the second conductive member 32. Each of the fourth bonding layer 38 and the fifth bonding layer 39 is solder. The fourth bonding layer 38 is separated from the third region 221A of the second terminal 22.

[0078] Next, the effects and benefits of semiconductor device A30 will be explained.

[0079] The semiconductor device A30 comprises a die pad 20, a first metal layer 41, a semiconductor element 10, and a sealing resin 50. The semiconductor element 10 is bonded to the first metal layer 41. The mounting surface 201 of the die pad 20 includes a first region 201A that surrounds the first metal layer 41 when viewed in a first direction z. The sealing resin 50 is in contact with the first region 201A. The bonding force of the sealing resin 50 to the first region 201A is greater than the bonding force of the sealing resin 50 to the first metal layer 41. Therefore, with this configuration, it is possible to suppress the peeling of the sealing resin 50 from the die pad 20 while mitigating the impact on the die pad 20 in the semiconductor device A30 as well. Furthermore, by having the same configuration as the semiconductor device A10, the semiconductor device A30 also exhibits the effects related to the said configuration.

[0080] This disclosure is not limited to the embodiments described above. The specific configuration of each part of this disclosure can be modified in various ways.

[0081] This disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device (A10) comprising: a die pad (20) having a mounting surface (201) facing one side in a first direction (z); a first metal layer (41) covering a part of the mounting surface; a semiconductor element (10) bonded to the first metal layer; and a sealing resin (50) covering a part of the die pad and the semiconductor element, wherein the mounting surface includes a first region (201A) surrounding the first metal layer when viewed in the first direction; the sealing resin is in contact with the first region; and the bonding force of the sealing resin to the first region is greater than the bonding force of the sealing resin to the first metal layer. Appendix 2. The semiconductor device (A10) according to Appendix 1, further comprising a first bonding layer (19) bonding the first metal layer (41) and the semiconductor element (10), wherein the first bonding layer is separated from the first region (201A). Appendix 3. The semiconductor device (A10) according to Appendix 2, further comprising: a first terminal (21) that is conductive to the semiconductor element (10); and a first conductive member (31) that connects the semiconductor element and the first terminal, wherein the sealing resin (50) covers a part of the first terminal and the first conductive member. Appendix 4. The semiconductor device (A10) according to Appendix 3, further comprising: a second metal layer (42), wherein the first terminal (21) has a first connection surface (211) that faces the same side as the mounting surface (201) in the first direction (z); the second metal layer covers a part of the first connection surface; and the first conductive member (31) is electrically bonded to the second metal layer. Appendix 5. The semiconductor device (A10) according to Appendix 4, wherein the first connecting surface (211) includes a second region (211A), the second region includes a portion located between the second metal layer (42) and the first region (201A) when viewed in the first direction (z), the sealing resin (50) is in contact with the second region, and the bonding force of the sealing resin to the second region is greater than the bonding force of the sealing resin to the second metal layer. Appendix 6. The semiconductor device (A10) according to Appendix 5, wherein the metal elements contained in the second metal layer (42) are the same as the metal elements contained in the first metal layer (41).Note 7. The semiconductor device (A10) according to Note 5, further comprising a second bonding layer (36) that electrically bonds the second metal layer (42) and the first conductive member (31), wherein the second bonding layer is separated from the second region (211A). Note 8. The semiconductor device (A10) according to Note 7, wherein the first conductive member (31) has a first surface (311A) and a second surface (311B) facing opposite directions in the first direction (z), the first surface is electrically bonded to the semiconductor element (10), and the surface roughness of the second surface is greater than that of the first surface. Note 9. The semiconductor device (A10) according to Note 5, wherein, viewed in the first direction (z), the second region (211A) surrounds the second metal layer (42). Note 10. A semiconductor device (A10) according to any one of appendices 5 to 9, further comprising: a second terminal (22) that is conductive to the semiconductor element (10); and a second conductive member (32) that connects the semiconductor element and the second terminal, wherein the sealing resin (50) covers a part of the second terminal and the second conductive member. Appendix 11. A semiconductor device (A10) according to appendice 10, further comprising: a third metal layer (43), wherein the second terminal (22) has a second connection surface (221) that faces the same side as the mounting surface (201) in the first direction (z); the third metal layer (43) covers a part of the second connection surface; and the second conductive member (32) is electrically bonded to the third metal layer. Appendix 12. The semiconductor device (A10) according to Appendix 11, wherein the second connection surface (221) includes a third region (221A) surrounding the third metal layer (43) when viewed in the first direction (z), the sealing resin (50) is in contact with the third region, and the bonding force of the sealing resin to the third region is greater than the bonding force of the sealing resin to the third metal layer. Appendix 13. The semiconductor device (A30) according to Appendix 12, wherein the metal elements contained in the third metal layer (43) are the same as the metal elements contained in the first metal layer (41). Appendix 14. The semiconductor device (A10) according to any one of Appendix 5 to 9, wherein the semiconductor element (10) has a first electrode (11) facing the first metal layer (42), and the first bonding layer (19) conductively bonds the first metal layer and the first electrode.Note 15. The semiconductor device (A10) according to Note 14, wherein the die pad (20) has a back surface (202) facing away from the mounting surface (201) in the first direction (z), and the back surface is exposed from the sealing resin (50). Note 16. The semiconductor device (A10) according to Note 15, wherein the surface roughness of the first region (201A) is greater than the surface roughness of the back surface (202). Note 17. A semiconductor device (A10) comprising: a terminal (22) having a connection surface (221) facing one side in a first direction (z); a semiconductor element (10) conductive to the terminal; a metal layer (43) covering a part of the connection surface; a conductive member (32) conductively bonded to the semiconductor element and the metal layer; and a sealing resin (50) covering a part of the terminal, the semiconductor element and the conductive member, wherein the connection surface includes a region (221A) surrounding the metal layer when viewed in the first direction, the sealing resin is in contact with the region, and the bonding force of the sealing resin to the region is greater than the bonding force of the sealing resin to the metal layer. Note 18. The semiconductor device (A10) according to Note 2, wherein the composition of the die pad (20) includes copper, and the first metal layer (41) includes silver. Note 19. The semiconductor device (A10) according to Appendix 2, wherein, in view of the first direction (z), the first bonding layer (19) is located inward from the periphery of the first metal layer (41). Appendix 20. The semiconductor device (A10) according to Appendix 12, wherein the semiconductor element (10) has a control electrode (13) located on the side opposite to the side facing the first metal layer (19) in the first direction (z), and the second conductive member (32) is conductively bonded to the control electrode. Appendix 21. The semiconductor device (A10) according to Appendix 14, wherein the semiconductor element (10) has a second electrode (12) located on the side opposite to the first electrode (11) in the first direction (z), and the first conductive member (31) is conductively bonded to the second electrode.

[0082] A10, A20, A30: Semiconductor device, 10: Semiconductor element, 11, 12: First electrode, second electrode, 13: Control electrode, 19: First bonding layer, 20: Die pad, 201: Mounting surface, 201A: First region, 202: Back surface, 203: First end surface, 204: First protrusion, 204A: Intermediate surface, 204B: Exposed surface, 21: First terminal, 211: First connection surface, 211A: Second region, 212: First mounting surface, 213: Second end surface, 214: Second protrusion, 214A: Intermediate surface, 214B: Exposed surface, 22: Second terminal, 221: Second connection surface, 221A : Third region, 222: Second mounting surface, 223: Third end surface, 224: Third protruding portion, 224A: Intermediate surface, 224B: Exposed surface, 31: First conductive member, 311: First joint, 311A, 311B: First surface, Second surface, 312: Second joint, 312A: Third surface, 313: Intermediate portion, 32: Second conductive member, 36-39: Second to fifth joint layers, 41, 42, 43: First metal layer, Second metal layer, Third metal layer, 50: Sealing resin, 51: Top surface, 52: Bottom surface, 53-57: First to fifth side surfaces, z, x, y: First direction, Second direction, Third direction

Claims

1. A semiconductor device comprising: a die pad having a mounting surface facing one side in a first direction; a first metal layer covering a portion of the mounting surface; a semiconductor element bonded to the first metal layer; and a sealing resin covering a portion of the die pad and the semiconductor element, wherein the mounting surface includes a first region surrounding the first metal layer when viewed in the first direction, the sealing resin is in contact with the first region, and the bonding force of the sealing resin to the first region is greater than the bonding force of the sealing resin to the first metal layer.

2. The semiconductor device according to claim 1, further comprising a first bonding layer for bonding the first metal layer and the semiconductor element, wherein the first bonding layer is separated from the first region.

3. The semiconductor device according to claim 2, further comprising: a first terminal that conducts to the semiconductor element; and a first conductive member that conducts to the semiconductor element and the first terminal, wherein the sealing resin covers a part of the first terminal and the first conductive member.

4. The semiconductor device according to claim 3, further comprising a second metal layer, wherein the first terminal has a first connection surface facing the same side as the mounting surface in the first direction, the second metal layer covers a portion of the first connection surface, and the first conductive member is electrically bonded to the second metal layer.

5. The semiconductor device according to claim 4, wherein the first connecting surface includes a second region, the second region includes a portion located between the second metal layer and the first region when viewed in the first direction, the sealing resin is in contact with the second region, and the bonding force of the sealing resin to the second region is greater than the bonding force of the sealing resin to the second metal layer.

6. The semiconductor device according to claim 5, wherein the metal element contained in the second metal layer is the same as the metal element contained in the first metal layer.

7. The semiconductor device according to claim 5, further comprising a second bonding layer that electrically bonds the second metal layer and the first conductive member, wherein the second bonding layer is separated from the second region.

8. The semiconductor device according to claim 7, wherein the first conductive member has a first surface and a second surface facing opposite directions in the first direction, the first surface is electrically bonded to the semiconductor element, and the surface roughness of the second surface is greater than that of the first surface.

9. The semiconductor device according to claim 5, wherein, in view of the first direction, the second region surrounds the second metal layer.

10. The semiconductor device according to any one of claims 5 to 9, further comprising: a second terminal that conducts to the semiconductor element; and a second conductive member that conducts to the semiconductor element and the second terminal, wherein the sealing resin covers a part of the second terminal and the second conductive member.

11. The semiconductor device according to claim 10, further comprising a third metal layer, wherein the second terminal has a second connection surface facing the same side as the mounting surface in the first direction, the third metal layer covers a portion of the second connection surface, and the second conductive member is electrically bonded to the third metal layer.

12. The semiconductor device according to claim 11, wherein the second connecting surface includes a third region surrounding the third metal layer when viewed in the first direction, the sealing resin is in contact with the third region, and the bonding force of the sealing resin to the third region is greater than the bonding force of the sealing resin to the third metal layer.

13. The semiconductor device according to claim 12, wherein the metal element contained in the third metal layer is the same as the metal element contained in the first metal layer.

14. The semiconductor device according to any one of claims 5 to 9, wherein the semiconductor element has a first electrode facing the first metal layer, and the first junction layer conductively bonds the first metal layer and the first electrode.

15. The semiconductor device according to claim 14, wherein the die pad has a back surface facing away from the mounting surface in the first direction, and the back surface is exposed from the sealing resin.

16. The semiconductor device according to claim 15, wherein the surface roughness of the first region is greater than the surface roughness of the back surface.

17. A semiconductor device comprising: a terminal having a connection surface facing one side in a first direction; a semiconductor element conductive to the terminal; a metal layer covering a part of the connection surface; a conductive member electrically bonded to the semiconductor element and the metal layer; and a sealing resin covering a part of the terminal, the semiconductor element and the conductive member, wherein the connection surface includes a region surrounding the metal layer when viewed in the first direction, the sealing resin is in contact with the region, and the bonding force of the sealing resin to the region is greater than the bonding force of the sealing resin to the metal layer.

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